M381178 .五、新型說明： 【新型所屬之技術領域】 本創作係關於-種發光三極體改良結構，制是指—種增設有齊納二 極體以達到靜電放電防護功能的發光二極體改良結構。 【先前技術】 由於發光二極體(LED : Light Emitting Diode)具有體積小、耗電低以 -及壽命長…等優點，因此目前已廣泛應用於家電、車輛、電腦週邊產品、 ♦通訊產品以及照明產品…等上，發光二極體已然成為新世代的光源，其重 要性不言可喻。 然而，發光二極體卻很容易在製造或使用過程中受到靜電放電 (Electrostatic Discharge，ESD)的影響而損壞。 為了解決上述的靜電放電問題，習知已有利用齊納二極體(Zenerdi〇de) 電性連接於發光二極體上的解決方案，如下。 - 請參閱第1圖所示習知的發光二極體1，係具有-承座i i，該承座 籲11則由基板（包含第-、二基板電極lu、112)以及形成於該基 板上的反射杯113所組成，第-基板電極111、第二基板電極112 以及反射杯113之間則藉由銘陽極化膜工3來彼此分隔。兩個後電極丄 2 a、12 b係分別形成於該承座工工的底側，且分別電性連接至第一和 第基板電極1 11、112。發光晶片14和齊納二極體15則分別設 置在第-基板電極1 ]_ i和第二基板·i i 2上，以保護發光晶片工4 免於受到靜電放電影響。至於透鏡i 6係配置於反射杯丄丄3上，以聚集 發光晶片14所發出的光。惟，此等方案一卻因為增設了齊納二極體15， 3 M381178 ·· 反而造成發光卵片1 4所發出的光會被齊納二極體1 5給吸收掉約2〇%的 重大缺失。 因此，如何設計出一種能既能利用齊納二極體來保護發光晶片免於受 到靜電放電影響，又能將光被齊納二極體吸收掉的比例給降至最低（相對 而言就提高了發光晶片的亮度），乃為本案創作人所企欲解決的一大課題。 【新型内容】 • 本創作的主要目的在於提供一種發光二極體改良結構，藉由將齊納二 鲁極體給埋入於承座内，以大幅降低齊納二極體吸收發光晶片之光的比例， 相對而言乃提升發光晶片的亮度，從而既能使用齊納二極體來達到靜電放 電防護功能，又能大幅降低齊納二極體吸收發光晶片之光的比例。 為達上述目的，本創作係提供一種發光二極體改良結構，包括：一承 座、一第一導電架、一第二導電架、一發光晶片、一絕緣膠以及一齊納二 極體。該承座係具有一基底和一形成於該基底上的反射杯，該基底的内底 -面係設有一第一凹部和一第二凹部；該第一導電架係設置於該第一凹部 ®内；該第二導電架係設置於該第二凹部内；該絕緣膠係設置於該第二凹部 内的内底面上；該發光晶片係設置於該第一導電架上，該發光晶片的兩電 極係分別與第一、二導電架電性連接在一起；該齊納二極體係設置於該絕 緣膠上，且該齊納二極體的兩電極係分別與第一、二導電架電性連接在一 起。 藉以，使齊納二極體等同被埋入於承座的第二凹部内，而既能利用齊 .納二極體來保護發光晶片免於受到靜電放電影響，又能將光被齊納二極體 吸收掉的比例給降至最低。 4 為了能夠更進一步瞭解本創作 下之特徵、特點和技術内容，請參閲以下 有關本創作之詳細說明與附圖， 限所附圖式僅提供參考與說明用，非用以 限制本創作。 【實施方式】 本創作係提供-種發光二她彻構制是指—種增設有齊納二 極體以達綱放賴e伽咖g _卿聊咖能的發光二 極體改良結構。M381178 . V. New description: [New technical field] This creation is about the improved structure of the light-emitting triode, which refers to the light-emitting diode with the Zener diode added to achieve the electrostatic discharge protection function. Improved structure. [Prior Art] Since LED (Light Emitting Diode) has the advantages of small size, low power consumption, and long life, it has been widely used in home appliances, vehicles, computer peripheral products, and communication products. Lighting products...etc., the light-emitting diode has become a new generation of light source, its importance is self-evident. However, the light-emitting diode is easily damaged by Electrostatic Discharge (ESD) during manufacturing or use. In order to solve the above electrostatic discharge problem, a solution for electrically connecting a Zener diode to a light-emitting diode has been known as follows. - Referring to the conventional light-emitting diode 1 shown in Fig. 1, there is a socket ii which is formed by a substrate (including the first and second substrate electrodes lu, 112) and formed on the substrate The reflective cup 113 is composed of a first substrate electrode 111, a second substrate electrode 112, and a reflective cup 113 separated from each other by an anodized film. Two rear electrodes a 2 a, 12 b are respectively formed on the bottom side of the susceptor, and are electrically connected to the first and second substrate electrodes 1 11 and 112, respectively. The light-emitting chip 14 and the Zener diode 15 are respectively disposed on the first substrate electrode 1]_i and the second substrate ·i i 2 to protect the light-emitting wafer 4 from electrostatic discharge. As for the lens i 6 , it is disposed on the reflective cup 3 to collect the light emitted from the light-emitting chip 14. However, because of the addition of the Zener diode 15, 3 M381178 ··, the light emitted by the luminescent egg piece 14 will be absorbed by the Zener diode 15 by about 2%. Missing. Therefore, how to design a device that can use the Zener diode to protect the light-emitting chip from electrostatic discharge and minimize the absorption of light by the Zener diode (relatively increase The brightness of the light-emitting chip) is a major issue that the creators of the case are trying to solve. [New content] • The main purpose of this creation is to provide a modified structure of a light-emitting diode, which can greatly reduce the light absorption of the light-emitting chip by the Zener diode by embedding the Zener diode in the socket. The ratio of the light-emitting wafer is relatively high, so that the Zener diode can be used to achieve the electrostatic discharge protection function, and the proportion of the light absorbed by the Zener diode to the light-emitting chip can be greatly reduced. To achieve the above objective, the present invention provides an improved structure of a light-emitting diode, comprising: a socket, a first conductive frame, a second conductive frame, a light-emitting chip, an insulating glue, and a Zener diode. The socket has a base and a reflective cup formed on the base, the inner bottom surface of the base is provided with a first recess and a second recess; the first conductive frame is disposed on the first recess The second conductive frame is disposed in the second recess; the insulating glue is disposed on the inner bottom surface of the second recess; the light emitting chip is disposed on the first conductive frame, and two of the light emitting chips The electrode system is electrically connected to the first and second conductive frames respectively; the Zener diode system is disposed on the insulating rubber, and the two electrode systems of the Zener diode are respectively electrically connected to the first and second conductive frames connected. Therefore, the Zener diode is equivalently embedded in the second recess of the socket, and the Zener diode can be used to protect the light-emitting chip from electrostatic discharge, and the light can be Zener. The proportion of the polar body absorbed is minimized. 4 In order to further understand the features, features and technical contents of this creation, please refer to the following for a detailed description of the creation and the drawings. The drawings are for reference and explanation only and are not intended to limit the creation. [Embodiment] This creative department provides a kind of illuminating diode structure which is added to the illuminating diode.
凊參閱第2圖所示之本創作第 0包括一承座2、一第一導電年β 絕緣膠6以及一齊納二極體7。 —實施例的剖面圖，該發光二極體2 0 —第二導電架4、一發光晶片5、一 該承座2係具有-基底2 i以及—形成於該基底2工上的反射杯2 2 ’該反射杯2 2内係形成凹杯狀，藉以容置所述發綱5、絕緣_ 和七納-極體7。該基底21係具有_内底面2 i◦，該内底面2丄〇則 設有一第一凹部211和一第二凹部2工2。 該第-導電架3係設置於該第_凹部2丄^内，至於第二凹部2 U 内則叹置有第—導電架4和絕緣膠6，且絕緣膠6係設置於第二凹部2丄 2的内底面210上。較佳者，第_、二凹部2ιι、2ΐ2之間係形成 有刀隔體213 ’絕緣膠6則設置於該分隔體2工3與第二導電架4之 間屬於第二凹部212的内底面21〇上。 該發光晶片5係設置於第-導電架3上，發光晶片5的兩電極（圖未 示）係分別與第一、二導電架3、4電性連接在一起，如圖所示者，發光 晶片5的兩電極係分別藉由第—導線5i和第二導線52來電性連接於第 M381178 —、二導電架3、4。 該齊納二極體7係設置於賴緣膠6上，齊納二極體7亦具有兩電極 ⑽未示）’該兩電極係分別電性連接於第一、二導電架3、4，如圖所 不者’該兩電極係均利用一導線7 〇而分別電性連接於第_、二導電架3、 4。 ,、 如圖所示，藉由承座2的基底2 1係設有第一、二凹部2丄τ、2工 2，絕緣膠6係設置於第二凹部2 jl 2内的内底面2 i ◦上，且齊納二極 體7除了設置於絕緣膠6上之外’其兩電極還分別電性連接於第一、二導 電架3 4，從而使齊納一極體7能被導通而產生靜電放電防護功能；同 時還月b因為齊納二極體7係被設置於承座2之第二凹部212内的絕緣 膠6上（絕緣膠係設置於内底面21〇上），而使齊納二極體7等同被埋 入於承座2的第二凹部212内，藉以大幅降低齊納二極體7吸收掉發光 晶片5之光的比例。 較佳者’承座2係可為PPA(Polyphthalamide,聚對笨二酰對苯二胺) 材質、聚酰胺(Nylon- Polyamide)材質、或 LCP(Liquid Crystal Polymer, 液晶樹脂)材質；發光晶片5係可為藍光晶片（Blue Chip);承座2的反射 杯2 2内係還封裝有螢光層2 3 ’使螢光層2 3能包覆住發光晶片5、絕 緣膠6、齊納二極體7、第一、二導線51、5 2、兩導線7 〇、以及位 於第一、二凹部211、212内的第一、二導電架3、4。 本創作發光二極體改良結構的特點在於：藉由在承座2的基底21上 設有第一、二凹部211、212，絕緣膠6係設置於第二凹部212内 6 的内底面210上，且齊納二極體7係設置於絕緣膠6上，齊納二極體7 的兩電極又分前性連接於第―、二導電架3、4，從而導通齊納二極H 7而產生靜電放電防護功能；同時，則還能因為齊納二極體7係被設置於 承座2之第二凹部212内的絕緣膠6上，換言之，即等同將齊納二極體 7埋入於承座2的第二凹部212内，以大幅降低齊納二極體γ吸收掉發 光晶片5之光的比例。從而讓本創作發光二極體改良結構既能利用齊納二 極體7來保護發光晶片5免於受到靜電放電影響，又能將光被齊納二極禮 7吸收掉的比例給降至最低，相對而言就提高了發光晶片5的亮度，特别 疋發光晶片5係為藍光晶片時，將能有效應用藍光晶片的發光效率。 請參閱第3圖所示之本創作第二實施例的剖面圖，第一、二實施例之 間的不同處在於：（第-）、承座2的第二凹部2 i 2内係進—步設有—第 三凹部214 ’且第三凹部214所凹入於内底面21〇的深度係大於第 二凹部212的凹人深度；（第二）、絕緣膠6則設置於第三凹部214内 的内底面210上。藉此乃能達到與第—實施例相同的功效，且齊納二麵 體7的埋人深度更深’相對乃更進—步地降低光被吸收掉的_。當然， 在第二實施例中’承^2的反射杯2 2内亦可封裝有螢光屠2 3，而有同 於第一貫施例的包覆住所述元件的功效。 請參閲第3 A_示之本創作第三實施例的剖關，第二、三實施例 之間的不同處在於：該承座2的基底21係進—步形成有一凸體2工5， 該凸體215係遮撞於齊納二極體7與第二導電架4之間，且該凸體2工 5還可鄰接於該第二導電架4的相應處，如圖，該齊納二極體7乃位於凸 體215與分隔體213之間。 M381178 .請參閱第4圖所示之本創作第四實施例的剖面圖，第二、四實施例之 間的不同處在於：（第一）、在第三凹部214内係填滿白膠（或透明膠亦 可）8 ’白膠8乃先包覆住絕緣膠6和齊納二極體7，而藉由白勝8則能 讓光反射，從而使第四實施例之發光晶片5的亮度和發光效率均優於第 一、二、三實施例；（第二）、本第四實施例係還能在承座2的第一、二凹 -部211、214之間形成有-分隔體213 ’白膠8乃係填入於分隔體 _ 2 1 3與第二導電架4之間的第三凹部2 1 4内，·（第三）、承座2的反射 #杯2 2内則可填滿有螢光膠2 4，或亦可在反射杯2 2内封裝一螢光層2 3 (第4圖未示）’使螢光膠24或螢光層23能包覆住除了絕緣膠6和 齊納二極體7以外的其它元件，即：發光晶片5、第一、二導線5丄、5 2、部分的導線7 0、以及位於第一'二凹部2ii、gig内的第一、 二導電架3、4。當然’第四實施例中的填滿白膠（或透卿）8、填滿 勞光膨2 4、和封裝-螢光層2 3等技術的其中之一或其中任多數的組 合，係亦可應用於第一實施例。 參 α上所述者，僅為本創作之較佳可行實施例而已，非因此即偏限本創 作之專利範圍，舉凡運用本創作說明書及圖式内容所為之等效結構變化， 均理同包含於本創作之權利範圍内，合予陳明。 8 M381178 【圖式簡單說明】 第1圖為習知發光二極體的剖面圖。 第2圖為本創作發光二極體第一實施例的剖面圖。 第3圖為本創作發光二極體第二實施例的剖面圖。 第3A圖為本創作發光二極體第三實施例的剖面圖。 第4圖為本創作發光二極體第四實施例的剖面圖。 • 【主要元件符號說明】 1、發光二極體 1 1、承座 1 1 1、第一基板電極 1 12、第二基板電極 1 1 3、反射杯 12 a、後電極 12 b、後電極 13、銘陽極化膜 • 14、發光晶片 15、齊納二極體 1 6、透鏡 2 0 0、發光二極體 2、承座 21、基底 210、内底面 21 1、第一凹部 212、第二凹部 M381178 213、分隔體 2 14 215、凸體 2 2、反射杯 23、螢光層 24 3、 第一導電架 4、 第二導電架 5、 發光晶片 51、第一導線 5 2 6、 絕緣膠 7、 齊納二極體 第三凹部 螢光膠 第二導線 7 0、導線 8、白膠Referring to Figure 2, the present invention includes a socket 2, a first conductive year β insulating rubber 6, and a Zener diode 7. - a cross-sectional view of an embodiment, the light-emitting diode 20 - the second conductive frame 4, a light-emitting chip 5, a socket 2 having a substrate 2 i and a reflective cup 2 formed on the substrate 2 2' The reflector cup 2 2 has a concave cup shape for accommodating the hair 5, the insulation _ and the seven nano-pole body 7. The base 21 has an inner bottom surface 2 i , and the inner bottom surface 2 is provided with a first recess 211 and a second recess 2 . The first conductive frame 3 is disposed in the first recess 2 2 , and the second conductive portion 2 U is provided with the first conductive frame 4 and the insulating rubber 6 , and the insulating rubber 6 is disposed in the second concave portion 2 . On the inner bottom surface 210 of the crucible 2. Preferably, between the first and second recesses 2 ιι and 2 ΐ 2, a knife spacer 213 is formed. The insulating rubber 6 is disposed between the separator 2 and the second conductive frame 4 and belongs to the inner bottom surface of the second recess 212. 21 〇. The light-emitting chip 5 is disposed on the first conductive frame 3, and the two electrodes (not shown) of the light-emitting chip 5 are electrically connected to the first and second conductive frames 3 and 4, respectively, as shown in the figure. The two electrodes of the wafer 5 are electrically connected to the M381178-, the second conductive frame 3, 4 by the first wire 5i and the second wire 52, respectively. The Zener diode 7 is disposed on the rim rubber 6, and the Zener diode 7 also has two electrodes (10) (not shown). The two electrodes are electrically connected to the first and second conductive frames 3 and 4, respectively. As shown in the figure, the two electrode systems are respectively electrically connected to the first and second conductive frames 3 and 4 by using one wire 7 〇. As shown in the figure, the base 2 1 of the socket 2 is provided with first and second recesses 2 丄τ, 2 2, and the insulating glue 6 is disposed on the inner bottom surface 2 i of the second recess 2 jl 2 In addition, the Zener diode 7 is electrically connected to the first and second conductive frames 34 in addition to being disposed on the insulating adhesive 6, so that the Zener diode 7 can be turned on. The electrostatic discharge protection function is generated; at the same time, since the Zener diode 7 is disposed on the insulating rubber 6 in the second recess 212 of the socket 2 (the insulating adhesive is disposed on the inner bottom surface 21〇), The Zener diode 7 is equivalently embedded in the second recess 212 of the socket 2, thereby greatly reducing the proportion of the light absorbed by the Zener diode 7 from the light-emitting wafer 5. Preferably, the 'seat 2 series may be a PPA (Polyphthalamide) material, a polyamide (Nylon-polyamide) material, or an LCP (Liquid Crystal Polymer) material; the light-emitting chip 5 It can be a blue chip; the reflective cup 2 2 of the socket 2 is also packaged with a fluorescent layer 2 3 ' so that the fluorescent layer 2 3 can cover the light-emitting chip 5, the insulating glue 6, the Zener two The pole body 7, the first and second wires 51, 5 2, the two wires 7 〇, and the first and second conductive frames 3, 4 located in the first and second recesses 211, 212. The improved structure of the light-emitting diode of the present invention is characterized in that the insulating glue 6 is disposed on the inner bottom surface 210 of the inner portion 6 of the second concave portion 212 by providing the first and second concave portions 211 and 212 on the base 21 of the socket 2. And the Zener diode 7 is disposed on the insulating glue 6, and the two electrodes of the Zener diode 7 are connected to the first and second conductive frames 3 and 4 in a forward manner, thereby turning on the Zener diode H7. The electrostatic discharge protection function is generated; at the same time, the Zener diode 7 is also disposed on the insulating rubber 6 in the second recess 212 of the socket 2, in other words, the Zener diode 7 is buried in the same manner. In the second recess 212 of the socket 2, the proportion of the light of the light-emitting wafer 5 absorbed by the Zener diode γ is greatly reduced. Therefore, the improved structure of the present light-emitting diode can utilize the Zener diode 7 to protect the light-emitting chip 5 from electrostatic discharge, and can minimize the proportion of light absorbed by the Zener diode 7 . In contrast, the brightness of the light-emitting wafer 5 is relatively increased. In particular, when the light-emitting wafer 5 is a blue light wafer, the light-emitting efficiency of the blue light wafer can be effectively applied. Referring to the cross-sectional view of the second embodiment of the present invention shown in FIG. 3, the difference between the first and second embodiments is that: (the -), the second recess 2 i 2 of the socket 2 is inserted into - The step is provided with a third recess 214 ′ and the depth of the third recess 214 recessed into the inner bottom surface 21 大于 is greater than the depth of the recess of the second recess 212 ; (second), the insulating rubber 6 is disposed at the third recess 214 On the inner bottom surface 210 inside. Thereby, the same effect as that of the first embodiment can be achieved, and the buried depth of the Zener dihedron 7 is deeper, and the relative absorption of the light is further reduced. Of course, in the second embodiment, the reflector cup 2 2 can also be packaged with a fluorescent bulb 2 3, which has the same effect as that of the first embodiment. Referring to the third embodiment of the third embodiment of the present invention, the difference between the second and third embodiments is that the base 21 of the socket 2 is formed with a convex body. The protrusion 215 is disposed between the Zener diode 7 and the second conductive frame 4, and the protrusion 2 can also be adjacent to the corresponding portion of the second conductive frame 4, as shown in the figure. The nano-polar body 7 is located between the convex body 215 and the separator 213. M381178. Referring to the cross-sectional view of the fourth embodiment of the present invention shown in Fig. 4, the difference between the second and fourth embodiments is that: (first), the third recess 214 is filled with white glue ( Or the transparent glue can also be 8' white glue 8 first covering the insulating glue 6 and the Zener diode 7, and by Bai Sheng 8 can reflect the light, so that the illuminating wafer 5 of the fourth embodiment Both the brightness and the luminous efficiency are superior to the first, second and third embodiments; (second), the fourth embodiment is also capable of forming a - separation between the first and second concave portions 211, 214 of the socket 2. The body 213 'white glue 8 is filled in the third recess 2 1 4 between the partition _ 2 1 3 and the second conductive frame 4, · (third), the reflection of the seat 2 # cup 2 2 The phosphor paste 2 4 may be filled, or a phosphor layer 2 3 (not shown in FIG. 4) may be encapsulated in the reflector cup 2 to enable the phosphor paste 24 or the phosphor layer 23 to be covered. Other components than the insulating paste 6 and the Zener diode 7, namely, the light-emitting chip 5, the first and second wires 5丄, 52, the portion of the wire 70, and the first 'two recesses 2ii, gig First and second conductive frames 3, 4. Of course, the combination of the white plastic (or transparent) 8, the filling of the light expansion 2 4, and the package-fluorescent layer 2 3 in the fourth embodiment is also a combination of any of the technologies. It can be applied to the first embodiment. The above description is only a preferred and feasible embodiment of the present invention, and thus does not limit the scope of the patent of the creation, and all equivalent structural changes using the present specification and the schema contents are included. Within the scope of the rights of this creation, it is given to Chen Ming. 8 M381178 [Simple description of the drawing] Fig. 1 is a cross-sectional view of a conventional light-emitting diode. Figure 2 is a cross-sectional view showing a first embodiment of the inventive light-emitting diode. Figure 3 is a cross-sectional view showing a second embodiment of the inventive light-emitting diode. Fig. 3A is a cross-sectional view showing a third embodiment of the inventive light-emitting diode. Figure 4 is a cross-sectional view showing a fourth embodiment of the inventive light-emitting diode. • [Main component symbol description] 1. Light-emitting diode 1 1 , socket 1 1 1 , first substrate electrode 1 12, second substrate electrode 1 1 3, reflective cup 12 a, rear electrode 12 b, rear electrode 13 , anodized film · 14, light-emitting chip 15, Zener diode 16 , lens 200 , light-emitting diode 2, socket 21, substrate 210, inner bottom surface 21 1 , first recess 212, second Recessed portion M381178 213, separator 2 14 215, convex body 2, reflective cup 23, fluorescent layer 24 3, first conductive frame 4, second conductive frame 5, light-emitting chip 51, first wire 5 26, insulating glue 7, Zener diode third recess fluorescent glue second wire 70, wire 8, white glue