TWM377038U - Plasma confinement device and plasma processing device using the same - Google Patents
Plasma confinement device and plasma processing device using the same Download PDFInfo
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- TWM377038U TWM377038U TW98208503U TW98208503U TWM377038U TW M377038 U TWM377038 U TW M377038U TW 98208503 U TW98208503 U TW 98208503U TW 98208503 U TW98208503 U TW 98208503U TW M377038 U TWM377038 U TW M377038U
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WLj 五、新型說明： 【新型所屬之技術領域】 本實用新型涉及一種用來製造半導體晶片、平面顯示 器或者液晶顯示器的等離子體處理裝置，尤其涉及一種等 離子體約束裝置以及利用該等離子體約束裝置的等離子體 處理裝置。 【先前技術】 等離子處理裝置利用真空反應室的工作原理進行半導 體基片和等離子平板的基片的加工。真空反應室的工作原 理是在真空反應室中通入含有適當刻蝕劑或澱積源氣體的 反應氣體，然後再對該真空反應室進行射頻能量輸入，以 啟動反應鐘’來雜和維持等離子體，以便分別刻餘基 片表面上的材料層或在基片表面上澱積材料層 ，進而對半 導體基片和等離子平板進行加工。舉例來說，電容性等離 子體反應3已經被廣;乏地用來加卫半導體基片糊示器平 板’在電容性等離子體反應H中，當射頻功率被施加到二 個電極之_或二者時’就在-對平行電極之間形成電容性 放電。 —等離子體是擴舰的’軸大部分轉子體會停留在 對電極之間的處理區域巾，但部分轉子體可能充滿整 作〇舉例來說’等離子射能充滿真空反應室下方 、言此理區外面的區域（比如，排氣區域）。若等離子體到達 ϋ域’則這些區域可能隨之發生腐儀、澱積或者侵餘， 5 ’ &成反應域部的顆粒站污，進而降低等離子處理裝 置的重複使用性能’並可能會縮短反應室或反應室零部件 的工作壽命。如果不將等離子體約束在一定的工作區威 内’帶電粒子將撞擊未被保護的區域，進而導致半導體基 片表面雜質和污染。 因此，業界一直不斷地致力於產生被約束在處理區的 因而更為穩定的等離子體《現有的一種思路是使用約束環 來約束等離子體’例如，美國專利5534751描述了一種腔 室結構’該腔室通過緊密排列形成窄縫隙的由絕緣材料製 成的約束環抑止等離子體擴散。這些窄縫隙被設置成具有 相同大小的寬度和深度（因而也具有相同的深寬比），以實 現均勻地排氣。當帶電粒子，如離子或者電子通過窄縫隙 時’他們中的大部分會撞擊到約束環的表面進而防止等離 子體的擴散。 此外，美國專利6178919公開了另外一種等離子體反 應器中的多孔的等離子體密封環，該等離子體密封環由導 電材料製成’環上設置有若干通孔以允許處理過程中的副 產品氣體通過這些通孔並被排出處理區，這些通孔具有相 同的深寬比’並且各通孔的直徑大小相同，以實現均勻地 排氣’此導電的密封環被設置成接地，在等離子體處理過 程中可以使等離子體中的電子通過該接地的密封環被導入 大地’使等離子體中的電子從處理反應器中移除，因而降 低等離子體的密度’以增強處理區内的離子密度。但是， 由於在等離子體處理過程_，使用過的反應氣體和副產品 氣體是通過等離子體約束裝置上設置的通孔而被排出反應 M377038WLj V. New Description: [Technical Field] The present invention relates to a plasma processing apparatus for manufacturing a semiconductor wafer, a flat panel display or a liquid crystal display, and more particularly to a plasma confinement apparatus and a plasma confinement apparatus therewith Plasma processing unit. [Prior Art] The plasma processing apparatus performs processing of a substrate of a semiconductor substrate and a plasma flat plate by using the working principle of the vacuum reaction chamber. The working principle of the vacuum reaction chamber is to pass a reaction gas containing a suitable etchant or a deposition source gas into the vacuum reaction chamber, and then input RF energy into the vacuum reaction chamber to start the reaction clock to mix and maintain the plasma. The semiconductor substrate and the plasma plate are processed by separately depositing a layer of material on the surface of the substrate or depositing a layer of material on the surface of the substrate. For example, the capacitive plasma reaction 3 has been widely used; it is used to protect the semiconductor substrate paster plate 'in the capacitive plasma reaction H, when RF power is applied to the two electrodes _ or two When it is - just - a capacitive discharge is formed between the parallel electrodes. - The plasma is the shaft of the expansion of the ship's shaft. Most of the rotor body will stay in the treatment area between the opposite electrodes, but some of the rotor body may be filled with the whole process. For example, 'plasma energy can be filled under the vacuum reaction chamber. The area outside (for example, the exhaust area). If the plasma reaches the ϋ domain, then these areas may be accompanied by sulphur, deposition or intrusion, 5 ' & into the reaction area of the particle station fouling, thereby reducing the reusability of the plasma processing device 'and may shorten The working life of the reaction chamber or reaction chamber components. If the plasma is not confined within a certain working area, the charged particles will strike the unprotected area, leading to impurities and contamination on the surface of the semiconductor substrate. Accordingly, the industry has been continually striving to produce a more stable plasma that is constrained in the processing zone. "An existing idea is to use a confinement ring to confine the plasma." For example, U.S. Patent 5,534,751 describes a chamber structure. The chamber suppresses plasma diffusion by a confinement ring made of an insulating material that closely forms a narrow gap. These narrow slits are arranged to have the same size width and depth (and thus also the same aspect ratio) to achieve uniform venting. When charged particles, such as ions or electrons, pass through a narrow gap, most of them will strike the surface of the confinement ring and prevent the diffusion of the plasma. In addition, U.S. Patent No. 6,178,919 discloses a porous plasma sealing ring in another plasma reactor, which is made of a conductive material. The ring is provided with a plurality of through holes to allow by-product gases during processing to pass through these. The through holes are discharged into the processing area, the through holes have the same aspect ratio 'and the diameters of the respective through holes are the same to achieve uniform exhausting'. The conductive sealing ring is set to be grounded during plasma processing. Electrons in the plasma can be introduced into the earth through the grounded seal ring to remove electrons in the plasma from the processing reactor, thereby reducing the density of the plasma to enhance the ion density within the processing zone. However, since the used reaction gas and by-product gas are discharged through the through holes provided in the plasma confinement device during the plasma treatment process, M377038
區域’因而，使用前述等離子體 補充; 約束裝置也普對工藝和生一' 產效率產生一些不利的影響。由於等離子體約束裝置為了 實現將等離子_束在反應腔内，必驗設置於其上的通 孔具有-定的深寬比’但該具有—定的深寬比的狹長通孔 卻使得使用過的副反應氣體在排出處理區時受狹長通孔的 阻檔而速度被減慢，由此，大大降低了排氣的效率，進而 導致多餘的作用過的副反應氣體過多時間地留存在反應腔The area 'is thus supplemented with the aforementioned plasma; the confinement device also has some adverse effects on the process and productivity. Since the plasma confinement device is configured to realize the plasma beam in the reaction chamber, the through hole provided thereon must have a certain aspect ratio, but the narrow through hole having a certain aspect ratio allows the used The side reaction gas is slowed down by the narrow through hole when it is discharged into the treatment zone, and the speed is slowed down, thereby greatly reducing the efficiency of the exhaust gas, thereby causing excess reactive side reaction gas to remain in the reaction chamber for too much time.
内’稀釋了反應氣體，降低工藝反應的效率，並且這^副 反應氣體也會在被處理的基片和反應腔室的零部件上產生 沉積形成聚合物，f彡響被處理基#的料魏和使反應腔 產生污染，不可避免地增加清潔反應腔的時間，降低^生 產效率。 【新型内容】 本實用新型的目的在於提供一種等離子體約束裝置和 利用轉離子體約束裝置的等離子體處理裝置，該等離子Internally diluting the reaction gas, reducing the efficiency of the process reaction, and this side reaction gas will also deposit on the substrate to be processed and the parts of the reaction chamber to form a polymer, which is the material of the treated substrate # Weihe causes pollution in the reaction chamber, which inevitably increases the time for cleaning the reaction chamber and reduces the production efficiency. [New content] The object of the present invention is to provide a plasma confinement device and a plasma processing apparatus using the ion-converting device, the plasma
體約束裝置不僅能將等離子體約束在處㈣域内，減少因 等離子體擴散而引起的處理腔室污染問題，而且可以大大 理腔室的排氣效率，減少使用過的反應氣體和副產 σσ乳體停留在處理腔窒内的時間。 本實用新型疋通過以下技術方法實現的： 雜子體，約束裝置，設置^等 體約束if ^的處㈣域和魏區域之間，所述等離子 _束灯包括相㈣隔設置並職若干她長通道的多 5 M377038 體約束裝置的第一區域上所形成的若干狹長通道的寬度小 於第二區域上所形成的若干狹長通道的寬度，並且所述等 離子體約束裝置的第一區域上所形成的若干狹長通道的深The body restraint device can not only confine the plasma in the (4) domain, reduce the contamination of the processing chamber caused by plasma diffusion, but also greatly improve the exhaust efficiency of the chamber, reduce the used reaction gas and by-product σσ milk. The time the body stays in the processing chamber. The utility model is realized by the following technical methods: a hetero-sub-body, a restraining device, a setting body, a body constraint such as a ^(4) field and a Wei area, the plasma_beam lamp includes a phase (four) interval and a plurality of her positions. The width of the plurality of elongated channels formed on the first region of the long channel of the multi-5 M377038 body restraining device is smaller than the width of the plurality of elongated channels formed on the second region, and formed on the first region of the plasma confinement device The depth of several narrow passages
區域和遠離下電極的第二區域，其特徵在於所轉離$ 寬比大於第二區域上所形成的若干狹長通道的深寬比。 根據本實用新型的另一方面，提供一種等離子體處理 裝置，包括：處理腔室；一對相互平行設置的上電極和下 電極，設置於所述處理腔室内，所述上電極與下電極之間 構成一處理區域；等離子體約束裝置，設置於一等離子體 處理裝置的處理區域的外側，所述等離子體約束裝置包括 相互間隔設置並形成若干個狹長通道的多個同心環，所述 等離子體約束裝置包括靠近下電極的第一區域和遠離下電 極的第二區域，其特徵在於：所述等離子體約束裝置的第 一區域上所形成的若干狹長通道的寬度小於第二區域上所 形成的若干狹長通道的寬度，並且所述等離子體約束裂置 的第一區域上所形成的若干狹長通道的深寬比大於第二區 域上所形成的若干狹長通道的深寬比。 【實施方式】 本實用新型提供-種等離子體約錢置，其不僅能有效 地將等離子體約束在轉子體處縣置的處理區域内，減少 因等離子體擴散而引起的處理腔室污染問題，而且可以大大 增加處理腔室的排氣效率’減少使用過的反應氣體和副產品 氣體停留在處理腔窒内的時間。 為了解決前述現有技術中的不足，專利創造人經過大量 6 MJ77038 MJ77038The region and the second region remote from the lower electrode are characterized in that the turned-off width ratio is greater than the aspect ratio of the plurality of elongated channels formed on the second region. According to another aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing chamber; a pair of upper and lower electrodes disposed in parallel with each other, disposed in the processing chamber, the upper and lower electrodes Forming a processing region; a plasma confinement device disposed outside the processing region of a plasma processing device, the plasma confinement device including a plurality of concentric rings spaced apart from each other and forming a plurality of elongated channels, the plasma The constraining device includes a first region adjacent to the lower electrode and a second region remote from the lower electrode, wherein a width of the plurality of elongated channels formed on the first region of the plasma confinement device is smaller than that formed on the second region The width of the plurality of elongated channels, and the aspect ratios of the plurality of elongated channels formed on the first region of the plasma confinement fracture are greater than the aspect ratios of the plurality of elongated channels formed on the second region. [Embodiment] The utility model provides a plasma type, which can not only effectively restrain the plasma in the treatment area of the county where the rotor body is located, but also reduce the pollution of the processing chamber caused by plasma diffusion. Moreover, the exhaust efficiency of the processing chamber can be greatly increased to reduce the time during which the used reaction gas and by-product gas stay in the processing chamber. In order to solve the aforementioned deficiencies in the prior art, the patent creator has passed a large number of 6 MJ77038 MJ77038
=研究和實驗發現，-方面，為了較佳地將等離 ，理區域内，需要將通道的寬度設置得越小越好（在通道的 j-糾）’而另外-方面’轉預約束裝置的排氣能 /、通道的寬度絲比，這雜所需的魏效率來設置其通 道的最小寬度。並且’在等離子體處理過程巾，等離子體會 延伸擴散、進而分佈於等料體約束t置的上游側（即，靠 近處理區域的-侧）表面’並且等離子體密度會在等離子體 約束裝置的上表面沿以被處理基片的財心為圓心沿徑向 方向逐漸衰減。換言之，對於分佈在等離子體約束裝置上表 面的等離子體而言，在越靠近半導體基片或下電極外邊緣的 位置’等離子體密度越高；在越絲半導體基#或下電極外 邊緣的位置，等離子_密度越低。根據等離子體在徑向分 佈這-特性，本實賴型提供—種優化的、具有變深寬比和 變通道寬的等離子體約束裝置，啊平衡了等離子體約束的 需求和高排氣能力的需求，其不僅有效地將等離子體放電約= Research and experiment found that, in order to better equate, within the region, the width of the channel needs to be set as small as possible (in the channel j-correction) and the other - aspect 'turn pre-constraint device The exhaust energy / / the width of the channel wire ratio, the required Wei efficiency to set the minimum width of its channel. And 'in the plasma treatment process, the plasma will spread and spread, and then distributed on the upstream side of the material constraint t (ie, near the side of the processing region) and the plasma density will be on the plasma confinement device. The surface gradually decays in the radial direction along the center of the center of the substrate to be processed. In other words, for a plasma distributed on the upper surface of the plasma confinement device, the plasma density is higher at a position closer to the outer edge of the semiconductor substrate or the lower electrode; at the outer edge of the filament semiconductor group # or the lower electrode The lower the plasma_density. According to the distribution of the plasma in the radial direction, the real-life type provides an optimized plasma confinement device with variable aspect ratio and variable channel width, which balances the requirements of plasma confinement and high exhaust capacity. Demand, which not only effectively discharges the plasma
98. 11. L γ- ； 年；J 束在處理區内’而且可减㈣岐錢體和副產品氣體能 快速地離開處理腔室。 請參閱圖1，圖1為配置有本實用新型等離子體約束裝 置的等離子體處理裝置的結構示意圖。等離子體處理裝置1 包括處理腔室1卜處理腔室11基本上為柱形，且處理腔室 側壁基本上豎直，處理腔室11内具有相互平行設置的上電 極12a和下電極12b。通常，在上電極12a與下電極12b之 間的區域2為處理區域，在該區域内將形成和維持等離子體 3。在下電極12b上方放置待要加工的工件4，該工件4可以 7 _補充j 是待要職或加工的半導體基片或者待要加工成平板顯示 器的玻璃平板1應氣體從處理腔室u的上方的氣體注入 口（未圖示）被輸入至處理腔室u内，一個或多個射頻電 源5a可以被單獨地施加在下·⑽上或同時被分別地施 加在上電極12a與下電極12b上，再通過射頻匹配器处將 射頻功率輸送到下電極12b上或上電極似與下電極⑽ 上從而在處理腔室11内部產生大的電場。大多數電場線 被包含在上電極12a和下電極12b之間的處理區域2内，此 電場對少1:存在於處理腔室U㈣的電子進行加速，使之 與輸入的反應氣_氣體分子碰撞。這些碰撞導致反應氣體 的離子化和等離子體驗發^反航體的巾性氣體分子在經 受這些強電場時失去了電子，留下帶正電的離子。帶正電的 離子向著下電極12b方向加速，與被處理的基片中的中性物 質結合’激發基片加工，即刻钱、澱積等。 請結合參閱圖2至圖5。其中，圖2為圖1所示虛線14 部分所示的等離子體約束裝置的放大示意圖。圖3為圖1所 示等離子體約束裝置的立體示意圖；圖4為圖3所示等離子 體約束裝置的俯視圖；圖5為圖3所示等離子體約束裝置沿 剖面線A-A剖開而得的剖視圖。本實用新型等離子體約束裝 置8設置於等離子體處理裝置1的處理區域2與排氣區域7 之間，用於使處理腔室11内的等離子體放電被基本約束在 處理區域2内’而不會延伸至排氣區域7内造成排氣區域7 内的腔室污染。排氣區域7與一排氣裝置80相連通，通過 排氣裝置80將處理腔室丨丨内的使用過的反應氣體和副產品 乳體抽出去。更频地，在^所示的實施方式^^ 體約束裝置8設置於處理腔室丨丨的内側壁山與下電極既 的基座12c的外周圍4G之間的間隙9内。等離子體約束裝 置8包括相互間隔設置並形成若干個狹長通道8知.备 的多個同心環82。多個同心環82t直地相1間隔開，相鄰 的環與環之間形成狹長通道。與現有技術不同，本實用新型 提供-種經過優化的、具有變深寬比和變通道寬的等離子體 約束裝置。如圖2所示’轉子體約束裝置8包括靠近下電 極12b的第-區域80a和遠離下電極12b的第二區域8〇c， 以及位於第-區域8Ga與第二區域咖之間的中間區域 嶋。等離子體約束裝置8的第—區域8Ga上所形成的狹長 通道84a的寬度Wa小於第二區域上所形成的狹長通道 的寬度Wc’並且等離子體約束裳置的第一區域8〇a上所形成 的狹長通道的深寬比Ha大於第二區域8Gc上所形成的狹長 通道的深寬比1^中間區域8Gb上所形成的狹長通道的寬度 Wb介於第-區域80a上所形成的狹長通道的寬度Wa和第二 區域80c上所形成的狹長通道的寬度Wc之間，所述中間區 域80b所形成的狹長通道的深寬比肋介於第一區域8〇a上 所形成的狹長通道的深寬比Ha和第二區域8〇c上所形成的 狹長通道的深寬比He之間。應當說明的是，前述的每一狹 長通道的深寬比是指：狹長通道在s直方向的高度或深度H 與相鄰兩個環之間形成的通道沿徑向方向R的寬度w之間的 比值。即：Ha=H/Wa; Hb=H/Wb; Hc=H/Wc。為了 不影響^離 子體約束裝置8整體的約束效果’優選地，每—個狹長通道 !?8.98. 11. L γ- ; years; J bundles in the treatment zone' and can be reduced (4) The money and by-product gases can quickly leave the processing chamber. Please refer to FIG. 1. FIG. 1 is a schematic structural view of a plasma processing apparatus equipped with a plasma confinement device of the present invention. The plasma processing apparatus 1 includes a processing chamber 1 and the processing chamber 11 is substantially cylindrical, and the processing chamber side walls are substantially vertical, and the processing chamber 11 has upper and lower electrodes 12a and 12b disposed in parallel with each other. Typically, the region 2 between the upper electrode 12a and the lower electrode 12b is a processing region in which the plasma 3 will be formed and maintained. A workpiece 4 to be processed is placed above the lower electrode 12b, which can be 7 _ supplemental j is a semiconductor substrate to be processed or processed or a glass plate 1 to be processed into a flat panel display should be gas from above the processing chamber u A gas injection port (not shown) is input into the processing chamber u, and one or more RF power sources 5a may be separately applied to the lower layer (10) or simultaneously applied to the upper electrode 12a and the lower electrode 12b, respectively. The RF power is delivered to the lower electrode 12b or the upper electrode to the lower electrode (10) through the RF matcher to generate a large electric field inside the processing chamber 11. Most of the electric field lines are contained in the processing region 2 between the upper electrode 12a and the lower electrode 12b. This electric field accelerates the electrons present in the processing chamber U(4) to collide with the input reaction gas-gas molecules. . These collisions lead to the ionization of the reactive gases and the plasma detection of the gas molecules of the anti-aircraft that lose electrons when subjected to these strong electric fields, leaving positively charged ions. The positively charged ions are accelerated toward the lower electrode 12b and bonded to the neutral substance in the substrate to be processed to excite the substrate to be processed, instantly deposited, deposited, and the like. Please refer to Figure 2 to Figure 5 together. 2 is an enlarged schematic view of the plasma confinement device shown by the broken line 14 in FIG. 3 is a perspective view of the plasma confinement device of FIG. 1; FIG. 4 is a plan view of the plasma confinement device of FIG. 3; and FIG. 5 is a cross-sectional view of the plasma confinement device of FIG. . The plasma confinement device 8 of the present invention is disposed between the processing region 2 of the plasma processing apparatus 1 and the exhaust region 7 for causing the plasma discharge in the processing chamber 11 to be substantially confined within the processing region 2 instead of It will extend into the exhaust zone 7 causing contamination of the chamber within the exhaust zone 7. The exhaust zone 7 communicates with an exhaust device 80 through which the used reaction gas and by-product milk in the process chamber are extracted. More frequently, the embodiment shown in Fig. 2 is disposed in the gap 9 between the inner side wall of the processing chamber and the outer periphery 4G of the base 12c of the lower electrode. The plasma confinement device 8 includes a plurality of concentric rings 82 that are spaced apart from one another and form a plurality of elongated channels 8 . A plurality of concentric rings 82t are spaced apart from each other by a straight phase 1, and an adjacent narrow ring is formed between the rings. Unlike the prior art, the present invention provides an optimized plasma confinement device having a variable aspect ratio and a variable channel width. As shown in FIG. 2, the rotor body restraining device 8 includes a first region 80a close to the lower electrode 12b and a second region 8〇c away from the lower electrode 12b, and an intermediate region between the first region 8Ga and the second region. Hey. The width Wa of the elongated channel 84a formed on the first region 8Ga of the plasma confinement device 8 is smaller than the width Wc' of the elongated channel formed on the second region and formed on the first region 8〇a of the plasma constrained skirt The aspect ratio Ha of the elongated channel is larger than the aspect ratio of the elongated channel formed on the second region 8Gc. The width Wb of the elongated channel formed on the intermediate portion 8Gb is interposed between the narrow channel formed on the first region 80a. Between the width Wa and the width Wc of the elongated channel formed on the second region 80c, the depth of the elongated channel formed by the intermediate portion 80b is deeper than the depth of the narrow channel formed by the rib on the first region 8〇a The width ratio Ha is between the aspect ratio of the elongated channel formed on the second region 8〇c. It should be noted that the aspect ratio of each of the aforementioned elongated passages means: between the height or depth H of the elongated passage in the s-direction and the width w of the passage formed between the adjacent two rings in the radial direction R. The ratio. That is: Ha=H/Wa; Hb=H/Wb; Hc=H/Wc. In order not to affect the constraining effect of the entire body restraining device 8', preferably, each narrow channel is ??8.
J 的:寬比至少為5:1，具有這種深寬比的狹長通道能使從處 理區内離開的來自等料義帶電粒子在離開此狹長通道 時，必須移動的距離大於該帶電粒子的平均自由程，使得從 處理區域中排出的用過的反應氣體及副產品氣體中的絕大 部分帶電粒子在通過這些狹長通道84a、84b、84c時至少要 與這些狹長通道的側壁碰撞一次，這些碰撞將帶電粒子上的 電荷中和，使得碰撞後離開狹長通道的粒子都是中性的。結 2是，使得在處理區以外的帶電粒子數被大大減少，排出的 氣體不會使等離子體的放電延伸到處理區外的空間，處理區 外的放電_勢將大大減少’從而基本上消除空間以外的放 電現象。 本實用新型通過設置變深寬比和變通道寬的等離子體 約束裝置，使等離子體約束裝置中靠近下電極附近的區域 80a、80b具有相對較小的通道寬和較大的深寬比，從而將區 域80a、80b上游側的高密度的等離子體約束住，同時這些 區域的排氣效率相對較低。而在等離子體約束裝置中遠離； 電極附近的區域80c具有相對較大的通道寬和較小的深寬 比，從而主要實現高的排氣效率，但仍然能將等離子體約束 住。經過龍優化僅财效地料離子體放電約束在處 理區内’而且可以使用過的反應氣體和副產品氣體能快速地 離開處理腔室。 、 應當理解’區域80a内形成的多個（圖示ψ，示例性地 表示為3個）狹長通道84a的寬度Wa可以被設置成—樣的， 也可以沿徑向R方向逐漸變大；同理，_内形成的多個（圖 M377038 98. 11. 4 r?: 年月曰X， 示中，示例性地表示為3個）狹長通道84b的寬度Wb可以 被設置成一樣的’也可以沿徑向R方向逐漸變大；8〇c内形 成的多個（圖示中，示例性地表示為2個）狹長通道84c的 寬度Wc可以被設置成一樣的，也可以沿徑向R方向逐漸變 大。 作為一種實施方式，所述等離子體約束裝置的第一區域 80a上所形成的狹長通道84a的寬度在0. 5至2. 0刪之間；J: a width ratio of at least 5:1, a narrow channel having such an aspect ratio enables the equivalent charged particles leaving the processing zone to move longer than the charged particle when leaving the narrow channel The mean free path is such that most of the charged reactant gas and by-product gas discharged from the treatment zone collide with the sidewalls of the elongated passages at least once through the elongated passages 84a, 84b, 84c. The charge on the charged particles is neutralized so that the particles leaving the narrow channel after the collision are neutral. The knot 2 is such that the number of charged particles outside the treatment zone is greatly reduced, and the discharged gas does not cause the discharge of the plasma to extend to the space outside the treatment zone, and the discharge_potential outside the treatment zone is greatly reduced, thereby substantially eliminating A discharge phenomenon outside the space. The utility model provides a relatively small channel width and a large aspect ratio in a region of the plasma confinement device near the lower electrode by providing a plasma confinement device with variable aspect ratio and variable channel width. The high-density plasma on the upstream side of the regions 80a, 80b is confined while the exhaust efficiency of these regions is relatively low. While being away from the plasma confinement device; the region 80c near the electrode has a relatively large channel width and a small aspect ratio, thereby achieving high exhaust efficiency, but still confining the plasma. After the optimization of the dragon, only the ion discharge is confined in the treatment zone, and the used reaction gas and by-product gas can quickly leave the processing chamber. It should be understood that the width Wa of a plurality of (illustrated ψ, exemplarily shown as three) elongated channels 84a formed in the region 80a may be set to be the same, or may be gradually increased in the radial direction R; A plurality of layers formed in the _ (Fig. M377038 98. 11. 4 r?: year 曰 X, exemplarily shown as 3) The width Wb of the elongated channel 84b can be set to the same 'may also The width Wc is gradually increased in the radial direction R; the width Wc of the plurality of (illustratively, two) exemplified elongated channels 84c formed in 8〇c may be set to be the same or may be along the radial direction R Gradually getting bigger. 0 至之间。 Between 0.
中間區域80b上所形成的狹長通道84b的寬度在1.5至 2. 5mm;第二區域80c上所形成的狹長通道84c的寬度為 2. 0mm至3. 0mm之間。狹長通道的深度在1〇至25麵之間。 根據本實用新型的構思和精神，應當理解，為了進一步 優化本實用新型的實施效果，不同區域80a、80b、80c内形 成的每一個狹長通道的深度也可以設置成不—樣的。例如， 區域80a、80b、80c内形成的狹長通道84a、84b、84c的深The width of the elongated channel 84b formed on the intermediate portion 80b is between 1.5 and 2.5 mm; the width of the elongated channel 84c formed on the second region 80c is between 2. 0 mm and 3.0 mm. The depth of the narrow channel is between 1 and 25 faces. In accordance with the concepts and spirit of the present invention, it should be understood that in order to further optimize the performance of the present invention, the depth of each of the elongated channels formed in the different regions 80a, 80b, 80c may also be set to be non-like. For example, the depth of the elongated channels 84a, 84b, 84c formed in the regions 80a, 80b, 80c
度沿徑向方向由小變大。通過改變深度來調節深寬比和/或 通道寬度，來實現更佳的等離子體約束和排氣能力。 在本實用新型的具體實施方式中，等離子體約束裝置可 以選用具有導電性的金屬製成（例如鋁、不銹鋼、鎢等）。 優選地，等離子體約束裝置由鋁製成，還可以對其表面進行 陽極化處理。陽極化處理是—種電解操作，該處理可以使金 屬表面形成-層氧化保護層。陽極化處理可用於多種目的， ^括^金屬表面職堅硬的㈣，或者令金屬財電氣 性’並且使金屬抗腐蝕。 更進-步地’在本實賴型的其他實施中，等離子體約 M377038 气11. 4瞀正 年月曰_ 一 束裝置中的若干個環朝向處理區域或接觸到等離丨孕蘧的表伽今·1 面區域可以首先進行陽極化處理，隨後再塗覆一層防止等離 子體腐蝕的物質，比如：塗覆一種Y203材料，以進一步防止 等離子體腐蝕。 作為本實用新型的一種具體的實施方式，本實用新型等 離子體約束裝置在等離子體處理過程中電接地。The degree increases from small to large in the radial direction. Better plasma confinement and venting capabilities are achieved by varying the depth to adjust the aspect ratio and/or channel width. In a specific embodiment of the present invention, the plasma confinement device may be made of a metal having conductivity (e.g., aluminum, stainless steel, tungsten, etc.). Preferably, the plasma confinement means is made of aluminum and its surface may also be anodized. The anodizing treatment is an electrolytic operation which forms a layer-oxidation protective layer on the surface of the metal. Anodizing can be used for a variety of purposes, including the hard surface of the metal surface, or the electrical conductivity of the metal and the corrosion resistance of the metal. Further progress - in other implementations of the real type, the plasma is about M377038 gas 11. 4瞀正年月曰_ Several rings in a bundle of devices are facing the treatment area or are in contact with the quarantine The surface area of the surface can be anodized first, followed by a layer of material that prevents plasma corrosion, such as coating a Y203 material to further prevent plasma corrosion. As a specific embodiment of the present invention, the plasma confinement device of the present invention is electrically grounded during plasma processing.
當然，作為上述實施例的變形，所述等離子體約束裝置 在等離子體處理過程中也可以被設置成相對於大地是不接 電或不接地(electrically floated from the ground)的。 這種架構會帶來更多的優勢。因為，通過使等離子體約束裝 置不接地，在等離子體處理裝置處理過程中，等離子體約束 裝置上的電勢與處理區域内的等離子體的電勢大致上相等 或為等電勢’這種設置可以使得處理裝置在處理的過程中，Of course, as a variation of the above embodiment, the plasma confinement device may also be disposed to be electrically floated from the ground relative to the earth during plasma processing. This architecture will bring more advantages. Because, by leaving the plasma confinement device ungrounded, the potential on the plasma confinement device is substantially equal to or equal to the equipotential of the plasma in the processing region during processing of the plasma processing device. The device is in the process of processing,
盡可能地減少用過的反應氣體及副產品氣體中或等離子體 中的帶電粒子加速沖向等離子體約束裝置並在等離子體約 束裝置的表面產生濺射或碰撞，從而減少由此濺射或碰撞而 產生的污染。 在本實用新型的另一種具體實施方式中，等離子體約束 裝置可以選用電介質材料（比如，石英材料或碳化矽或氮化 紗(Si3N4))製成。優選地’等離子體約束裝置由石英圓環 組成。 在具體加工等離子體約束裝置的過程中，可以提供一塊 圓壤板’在該板上開設有同心的狹長通道，並且使通道的寬 度和深寬比以前述描述設置；或者，也可以提供具有若干事 12 98. 11. 4 和ί 年月曰 侧无 先加工成形的環，將 __ 離 子體約束裝置。。二衣疋方式纽裝連接成所需等 種等離子體的構思，本實用新型還提供- 所迷處理腔室内置包括一處理腔室、設置於 及等離子!^▲ 士相互平仃设置的上電極和下電極、以 等 區所述上電極與下電極之間構成一處理 離子體+體約綠置設置於該處理區域的外侧 式Γ絲置實施方式可以採时述所述的各種實施方 導實料型所述的轉子體處理裝置包㈣於製造半 莫阳片平面顯不器或者液晶顯示器的使用等離子體處理 導體基片的各觀備，例如，等離子體處理的沉積設備、 等離子體蝕刻設備等。 以上介紹的僅僅是基於本實用新型的幾個較佳實施 例並不忐以此來限定本實用新型的範圍。任何對本實用新 &的裝置作本技術領域内熟知的部件的替換、組合、分立， 以及對本實用新型實施步驟作本技術領域内熟知的等同改 變或替換均不超出本實用新型的揭露以及保護範圍。 【圖式簡單說明】 圖1為配置有本實用新型等離子體約束裝置的等離子體 處理裝置的結構示意圖； 圖2為圖1所示虛線14部分所示的等離子體約束裝置 的放大示意圖； 圖3為圖1所示等離子體約束裳置的立體示意圖； 13 i M377038 98ΓΊΓί ^ ： i 年 Ά ::. 圖4為圖3所示等離子體約束裝置的俯視圖；__ 圖5為圖3所示等離子體約束裴置沿剖面線A _ A剖開而得Minimize the use of charged particles in the used reactive gas and by-product gas or in the plasma to accelerate toward the plasma confinement device and generate sputtering or collision on the surface of the plasma confinement device, thereby reducing sputtering or collision. The pollution produced. In another embodiment of the present invention, the plasma confinement device may be made of a dielectric material such as a quartz material or tantalum carbide or nitrided yarn (Si3N4). Preferably the 'plasma restraint device consists of a quartz ring. In the process of specifically processing the plasma confinement device, a circular loam plate may be provided on which a concentric elongated channel is opened, and the width and aspect ratio of the channel are set as described above; or, there may be provided 12 98. 11. 4 and ί 曰 无 无 无 无 无 无 无 无 无 先 先 先 先 先 先 先 先 先 先 先 先 先 先 先. The utility model is also provided with the concept that the two clothes are connected to the plasma of the desired type, and the utility model also provides that the processing chamber has a built-in electrode including a processing chamber, a plasma electrode, and a plasma device. And the lower electrode, the upper electrode and the lower electrode are formed as a processing ion body + the body is disposed in the outer side of the processing region, and the embodiment can be described in various embodiments. The rotor body processing apparatus of the solid type described (4) is used for manufacturing a semi-moyang sheet flat display or a liquid crystal display using a plasma processing conductor substrate, for example, a plasma processing deposition apparatus, plasma etching Equipment, etc. The above description is only a few preferred embodiments based on the present invention and is not intended to limit the scope of the present invention. Any substitutions, combinations, and discretes of the components of the present invention which are well known in the art, and equivalent changes or substitutions well known in the art to the practice of the present invention are not disclosed and protected. range. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a plasma processing apparatus equipped with a plasma confinement device of the present invention; FIG. 2 is an enlarged schematic view of a plasma confinement device shown by a broken line 14 in FIG. 1; FIG. 4 is a top view of the plasma confinement device shown in FIG. 3; FIG. 4 is a top view of the plasma confinement device shown in FIG. 3; The constraining device is cut along the section line A _ A
的剖視圖。 【主要元件符號說明】 1等離子體處理裝置 11處理腔室 11a内侧壁 12a上電極 12b下電極 12c基座 14虛線 2處理區域 3等離子體 4工件 40外周圍 5a射頻電源 5b射頻匹配器 7排氣區域 8等離子體約束裝置 80排氣裝置 80a第一區域 80c第二區域 80b中間區域 82同心環 84a、84b、84c 通道 9間隙 Wa寬度 Wb寬度 Wc寬度 Η深度 R徑向方向 14Cutaway view. [Main component symbol description] 1 plasma processing apparatus 11 processing chamber 11a inner side wall 12a upper electrode 12b lower electrode 12c pedestal 14 broken line 2 processing area 3 plasma 4 workpiece 40 outer periphery 5a RF power supply 5b RF matching device 7 exhaust Zone 8 plasma confinement device 80 exhaust device 80a first region 80c second region 80b intermediate region 82 concentric rings 84a, 84b, 84c channel 9 gap Wa width Wb width Wc width Η depth R radial direction 14
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103177925A (en) * | 2011-12-23 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Adjustable limiting ring used for plasma processing device |
| TWI474366B (en) * | 2011-12-30 | 2015-02-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103177925A (en) * | 2011-12-23 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Adjustable limiting ring used for plasma processing device |
| TWI474366B (en) * | 2011-12-30 | 2015-02-21 |
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