TWM366757U - AC LED packaging structure - Google Patents
AC LED packaging structure Download PDFInfo
- Publication number
- TWM366757U TWM366757U TW098207040U TW98207040U TWM366757U TW M366757 U TWM366757 U TW M366757U TW 098207040 U TW098207040 U TW 098207040U TW 98207040 U TW98207040 U TW 98207040U TW M366757 U TWM366757 U TW M366757U
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- Prior art keywords
- package structure
- insulator substrate
- led
- electrode holder
- emitting diode
- Prior art date
Links
- 238000004806 packaging method and process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 32
- 239000012212 insulator Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
M366757 五、新型說明: 【新型所屬之技術領域】 本創作係關於一種交流發光二極體(Alternate Current Light Emitting Diode ; AC LED),尤指一種具耐高壓特性 5 之交流發光二極體封裝結構β 【先前技術】 參考圖1,係習知發光二極體封裝結構示意圖。圖中 示出習知發光二極體封裝結構主要是在一散熱塊(slug)l上 10 承載一LED晶粒(chip)2,並從LED晶粒2導接出兩條金線3 以各自電性連接於正極支架4與負極支架5。上述正極支架4 與負極支架5用以接置一電源(圖未示)使LED裝置運作發 光。 AC LED產品於運作時因其中LED晶粒係直接接觸市 15 電所供應之交流電壓,相較於以往直流發光二極體(DC LED)產生了 一潛在問題,即可能會有高壓擊穿LED晶粒的 情形,如此會導致當人體碰觸到LED裝置本體時觸電。 以UL耐高壓安規為例,其規範之耐高壓算式: (1000+2U)伏特(Volt),其中U為裝置工作電壓。因此當電 20器裝置要求輸入電壓為120 Vrms時,需耐高壓1.24 KV。由 於一般DC LED之封裝不須考慮此耐高壓問題(因為經額外 控制電路將交流供電轉換成直流型態、並降壓至例如 3.5V) ’而目前AC LED又大抵沿襲DC LED之封裝方式,是 故為了解決上述問題,急需一種針對AC LED封裝結構之改 3 M366757 良設計,以期能符合相關的安全規範,有利於廠商之產品 銷售。 【新型内容】 5 本創作之交流發光二極體封裝結構包括一散熱塊、一 交流發光二極體模組、一正極支架、一負極支架、及一絕 緣子基板,其中交流發光二極體模組電性連接於正極支架 與負極支架,絕緣子基板位於交流發光二極體模組與散熱 塊之間,且絕緣子基板具有耐電壓值大於1000V之特性。 10 藉由上述改良封裝結構,交流發光二極體產品之耐高 壓特性提升至符合目前安全規範(如UL、CE、TUV、FCC、 CSA、PSE、BSMI等規範),可避免LED擊穿受損、危害人 體。 上述絕緣子基板可以是熱傳導係數大於100W/m · K, 15 例如矽絕緣子基板,更佳為鑽石絕緣子基板。 上述交流發光二極體模組可以是單一交流發光二極 體晶粒、或者複數個相互串接或並聯之交流發光二極體晶 粒、或者複數個相互串接或並聯之直流發光二極體晶粒、 或者複數個相互串接或並聯之交流與直流發光二極體晶粒 20 混搭。上述絕緣子基板可以是單一絕緣子基板、或者相互 分散而對應複數交流發光二極體晶粒之複數個子基板區 塊。 上述交流發光二極體模組之晶粒基板厚度可以是100 微米以上(含)。上述散熱塊可以是銅散熱塊或導熱性佳之 M366757 散熱材製成之散熱塊。 【實施方式】 本創作主要將交流發光二極體晶粒與其承載座(亦為 5散熱塊)間的距離加大,以避免高壓電源於金線與二極體晶 粒流通時造成電弧導通承載座,形成人體接觸危安。 參考圖2,係本創作一較佳實施例之交流發光二極體 封裝結構示意圖。圖中示出一交流發光二極體封裝結構包 括一散熱塊11、一交流發光二極體模組12、一絕緣子基板 10丨5、一正極支架13、及一負極支架14。本例中,交流發光 二極體模組12是以複數個交流發光二極體晶粒m〜124相 互串接所構成,而絕緣子基板15包括複數個子基板區塊 151〜154對應於上述交流發光二極體晶粒丨以〜丨24。 上述複數絕緣子基板區塊151〜154形成在散熱塊11 I5上’並對應承載著複數交流發光二極體晶粒121〜丨24 ^各 交流發光二極體晶粒之間透過金線2〇電性連接,其中二最 外側之乂流發光—極體晶粒121,124亦各自透過金線21 22 電性連接到正極支架13及負極支架14。 特別的是,絕緣子基板15之耐電壓值大於ιοοον。同 20時’若考慮匹配散熱塊11( 一般為金屬材例如銅,熱傳導係 數約380W/m· K)的熱傳能力,則可還擇材料具有導熱良好 之特性者,較佳可選擇熱傳導係數大於丨〇〇 W/m · κ之材料 例如矽(約120W/m · K”更佳者可選擇鑽石材質。本實施 例中所採用之絕緣子基板15厚度大於1〇〇微米。 5 M366757 針對耐高壓問題,本創作亦建議另一種解決方案,亦 即將交流發光二極體晶粒之晶粒基板(一般為藍寶石基板Λ) 厚度由習知常用之100〜150微米提高至1〇〇微米以上(含), 如此也能夠有效預防電弧導通之意外。可想而知,更佳的 5實施模式中,除了採用額外形成一絕緣子基板之封裝結構 外,亦同時採用增厚之晶粒基板,藉此更為確保抑制漏電 危險。 上述實施例僅係為了方便說明而舉例而已,本創作所 主張之權利範圍自應以申請專利範圍所述為準,而非僅限 10 於上述實施例。 【圖式簡單說明】 圖1係習知發光二極體封裝結構示意圖。 圖2係本創作一較佳實施例之交流發光二極體封裝結構示 15意圖。 LED晶粒2 正極支架4,13 交流發光二極體模組12 絕緣子基板15 子基板區塊151,152,153,154 【主要元件符號說明】 散熱塊1,11 金線3, 20,21,22 負極支架5,14 交流發光二極體晶粒 121,122,123,124
Claims (1)
- M366757 修正 _.—*·-^**°** '第98207040號,98年8月修正頁 ' 六、申請專利範圍 L 一種交流發光二極體封裝結構,包括有一散熱塊、 . 一交流發光二極體模組、一正極支架、及一負極支架,該 交流發光二極體模組電性連接於該正極支架與該負極支 5架; 其特徵在於: 該父流發光二極體封裝結構更包括一絕緣子基板,該 • 絕緣子基板位於該交流發光二極體模組與該散熱塊之間, ® 其中該絕緣子基板具有耐電壓值大於1000V之特性。 10 2.如申請專利範圍第1項所述之封裝結構,其中,該 絕緣子基板之熱傳導係數大K100w/m· κ。 3. 如申凊專利範圍第1項所述之封裝結構,其中,該 絕緣子基板為矽絕緣子基板。 4. 如申凊專利範圍第1項所述之封裝結構,其中,該 15 絕緣子基板為鑽石絕緣子基板。 5. 如申請專利範圍第1項所述之封裝結構,其中,該 Φ 父流發光二極體模組包括複數個相互串接之交流發光二極 體晶粒。 . 6·如申請專利範圍第5項所述之封裝結構,其中,該 2〇絕緣子基板包括複數個子基板區塊,對應於該複數個交流 發光二極體晶粒。 7·如申請專利範圍第i項所述之封裝結構,其中,該 絕緣子基板厚度為100微米以上。 8.如申請專利範圍帛i項所述之封裝結構,其中,該 7散熱塊為銅散熱塊。Y 8
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW098207040U TWM366757U (en) | 2009-04-27 | 2009-04-27 | AC LED packaging structure |
US12/588,326 US20100270575A1 (en) | 2009-04-27 | 2009-10-13 | AC LED package structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW098207040U TWM366757U (en) | 2009-04-27 | 2009-04-27 | AC LED packaging structure |
Publications (1)
Publication Number | Publication Date |
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TWM366757U true TWM366757U (en) | 2009-10-11 |
Family
ID=42991335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW098207040U TWM366757U (en) | 2009-04-27 | 2009-04-27 | AC LED packaging structure |
Country Status (2)
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US (1) | US20100270575A1 (zh) |
TW (1) | TWM366757U (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120241810A1 (en) * | 2010-11-30 | 2012-09-27 | Zheng Wang | Printing circuit board with micro-radiators |
DE102013101262A1 (de) * | 2013-02-08 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US7931390B2 (en) * | 1999-02-12 | 2011-04-26 | Fiber Optic Designs, Inc. | Jacketed LED assemblies and light strings containing same |
US6936855B1 (en) * | 2002-01-16 | 2005-08-30 | Shane Harrah | Bendable high flux LED array |
KR100623024B1 (ko) * | 2004-06-10 | 2006-09-19 | 엘지전자 주식회사 | 고출력 led 패키지 |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
CN101689585A (zh) * | 2007-06-15 | 2010-03-31 | 罗姆股份有限公司 | 半导体发光装置及其制造方法 |
JP5188120B2 (ja) * | 2007-08-10 | 2013-04-24 | 新光電気工業株式会社 | 半導体装置 |
-
2009
- 2009-04-27 TW TW098207040U patent/TWM366757U/zh not_active IP Right Cessation
- 2009-10-13 US US12/588,326 patent/US20100270575A1/en not_active Abandoned
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US20100270575A1 (en) | 2010-10-28 |
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