TWM343894U - Intelligent memory module and its status detection and adjustment device thereof - Google Patents

Intelligent memory module and its status detection and adjustment device thereof Download PDF

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Publication number
TWM343894U
TWM343894U TW97209888U TW97209888U TWM343894U TW M343894 U TWM343894 U TW M343894U TW 97209888 U TW97209888 U TW 97209888U TW 97209888 U TW97209888 U TW 97209888U TW M343894 U TWM343894 U TW M343894U
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Taiwan
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memory
signal
state
unit
memory module
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TW97209888U
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Chinese (zh)
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Chieh-Hung Hsieh
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Golden Emperor Internat Ltd
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Priority to TW97209888U priority Critical patent/TWM343894U/en
Publication of TWM343894U publication Critical patent/TWM343894U/en

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Description

M343894 八、新型說明: 【新型所屬之技術領域】 本創作係有關於一種記憶體模組,尤其係是一種包含 狀態偵測與動態調整之智慧型記憶體模組及其狀態偵測與 調整裝置。 【先前技術】 e己fe 體模組(Dual ln]ine Memory Modules,DIMM)於 ⑩ 傳統的應用上,僅作為電腦系統運作上資料之存取,所需 之電源及訊號品質,皆被動的由電腦主機板上記憶體插槽 所提供。習知記憶體模組沒有包含狀態偵測與動態調整之 功能,一般消費者無法得知該記憶體模組(DIMM)是否於良 ~ 好及正確的系統環境下運作。 - 請參閱第三圖,顯示習知記憶體模組2插接於記憶體 插槽1之立體圖。習知記憶體模組2係將已封裝之記憶體 晶片組裝於印刷電路板上而成為一模組(M〇dule),以供個 人電腦及筆記型電等使用,也可說它是内含一組記憶體晶 • 片的小型電路板。由於每一側都有兩排針腳,因此記憶體 、模組能提供較寬的存取路徑,該兩排針腳目的在連結記憶 ‘體控制H與記憶體w所有的控難號與位址線與資料線 用。 習知記憶體模組依設計結構不同可將記憶體晶片置於 正面或背面,記憶體模組不需成對***記憶體插槽内使 用,而且它可以和有相同針腳數目的其他不同容量、速度 之圮憶體模組混插使用。例如,可以在主機板上將和 2GB的記憶體模組合併使用。 5 M343894 然而,記憶體模組的運作條件對系統的穩定度甚為敏 感,若因品質較差的電源供應1¾、或主機板上的電容瑕疯都 會造成記憶體所需電壓/電流/頻率之訊號品質不良或不 穩,將造成系統重新開機、系統當機或錯誤、系統沒有辦 法正常讀取/寫入記憶體單元…等。此外,習知記憶體模組 採用氣冷,若主機殼體之内導流沒有做好,不能即時將諸 如CPU、晶片組、VGA晶片、電源供應器、硬碟裝置、光 碟機…等產生之熱能排出,就會造成熱循環,進而影響記憶 體晶片工作條件。 【新型内容】 本創作之目的之一在於提供一種智慧型記憶體模組, 包含狀態偵測與動態調整功能。 本創作之目的之一在於提供一種狀態偵測與動態調整 裝置,插接於一記憶體插槽以偵測鄰近記憶體插槽之記憶 體卡的狀態並調整其系統環境運作條件。 本創作提供一種智慧型記憶體模組,包含:複數個記 憶體晶片;一訊號匯流排,電性連接該等記憶體晶片;一 工作品質偵測單元,偵測該等記憶體晶片之工作條件,並 輸出一偵測訊號;一制冷晶片裝置,安裝於該等記憶體晶 片且調整該等記憶體晶片之工作溫度;一微處理控制單 元,接收前述偵測訊號且輸出一指示信號與一控制訊號, 前述微處理控制單元響應該偵測訊號,以輸出該控制訊號 至前述制冷晶片裝置;以及一輸出指示單元,接收前述指 示信號以顯示該等記憶體晶片之工作狀態。 6 M343894 本創作提供一種狀態偵測調整裝置,實施於一記憶體 模組,該記憶體模組具有複數個記憶體晶片與一訊號匯流 排,該狀態偵測調整裝置包含:一工作品質偵測單元,偵 測該等記憶體晶片之工作條件,並輸出一偵測訊號;一制 冷晶片裝置,安裝於該等記憶體晶片且調整該等記憶體晶 片之工作溫度;一微處理控制單元,接收前述偵測訊號且 輸出一指示信號與一控制訊號,前述微處理控制單元響應 該偵測訊號,以輸出該控制訊號至前述制冷晶片裝置;以 及一輸出指示單元,接收前述指示信號以顯示該等記憶體 晶片之工作狀態。 本創作提供一種狀態偵測調整裝置,包含:一訊號匯 流排,電氣連接於一記憶體插槽;一工作品質偵測單元, 從該訊號匯流排偵測插接於另一記憶體插槽之記憶體卡之 工作條件,並輸出一偵測訊號;一微處理控制單元,接收 前述偵測訊號且輸出一指示信號;以及一輸出指示單元, 接收前述指示信號以顯示該記憶體卡之工作狀態。 本創作所提供之智慧型記憶體模組及其狀態偵測調整 裝置,除了讓使用者可即時掌握記憶體模組之記憶體晶片 的運作狀態外,亦可將動態調整記憶體晶片的系統環境運 作條件,包含:電壓、頻率、溫度等,進而提升系統的穩 定度。 本創作之前述目的或特徵,將依據後附圖示加以詳細 說明,唯需明瞭的是,後附圖示及所舉之例,只是做為說 明而非在限制或限縮本創作。 【實施方式】 7 M343894 雖然本創作將參閱含有本創作較佳實施例之所附圖式 予以充分描述,但在此描述之前應暸解熟悉本行之人士可 修改本文中所描述之創作,同時獲致本創作之功效。因此, 須瞭解以下之描述對熟悉本行技藝之人士而言為一廣泛之 揭示,且其内容不在於限制本創作。 . 請參閱第一圖,顯示本創作智慧型記憶體模組的方塊 圖。本創作智慧型記憶體模組1〇係將已封裝之複數個記憶 ⑩ 體晶片15組裝於印刷電路板上而成為一模組,該印刷電路 板兩侧的針腳為訊號匯流排16。該印刷電路板的線路佈局 電氣連接複數個記憶體晶片15與訊號匯流排16。本創作智 慧型記憶體模組1〇可插接於習知記憶體插槽1,使訊號匯 • 流排16接收來自主機板的訊號,這些訊號包含電壓訊號、 _ 頻率訊號、資料訊號與若干控制訊號。 本創作智慧型記憶體模組1〇具有狀態偵測與動態調整 功能,進一步包含一狀態偵測調整裝置。該狀態偵測調整 裝置包括:一輸出指示單元u、一微處理控制單元12、一 ❿ 品質偵測單兀13及—制冷晶片裝置14。工作品質偵測 •單元13從訊號匯流排16偵测關於記憶體晶片15之工作條 -件,包含電壓訊號與頻率訊號等。工作品質偵測單元13亦 包含溫度感測斋’用以感測記憶體晶片15之表面溫度以及 周圍環境溫度,而^作品質偵測單元13將所有的價測結果 提供給微處理控制單凡12進行監控,同時微處理控制單元 12也將偵測的電壓、頻率與溫度等指示信號提供至輸出指 不單元11,讓,Z者可便於知悉記憶體工作狀態。輸出指 不單元11可由#日形式、液晶顯示器或由複數個發光二極 8 M343894 體(LED)來表示工作狀態。 微處理控制單元12監控電壓、頻率等電子信號係依記 憶體晶片15之產品規格而定。在本創作的實施例中,微處 理控制單元12以記憶體晶片15之原廠參數標準為基礎, 動態監控記憶體晶片15之電子信號的差異值。當微處理控 制單元12判斷該差異值超過一設定門檻後,例如偵測的電 子信號與原廠參數標準差異達10%時,即進入動態調整模 式,使該差異值低於該設定門檻或回復原廠參數標準之狀 態。 此外’本創作調整記憶體晶片15之工作狀態尚有利用 一制f晶片裝置14以調整記憶體晶片15之溫度。微處理 ’ 控制單元12從工作品質偵測單元13可獲得記憶體晶片15 ' 之表面溫度以及周圍環境溫度,可計算其差異以產生一控 制=號,且輸出該控制訊號至制冷晶片裝置14。該制冷晶 ^裝置14包含一制冷晶片,該制冷晶片的一面貼於記憶體 J片^15之表面,而另一面則配置散熱片,其中該制冷晶片 鲁 曰收微處理控制單元12所輸出的控制訊號,以調整記憶體 二曰^ 15之表面溫度。關於制冷晶片之溫度控制係為此技術 , 項域之人士所熟悉之技術手段。 1麥,第二圖,顯示本創作狀態偵測調整之流程圖。 ^作狀態偵測調整之流程適用於第一圖所示之智慧型記 ^體模組。f狀態偵測調整之流程包含:由工作品質横測 早兀13即時偵測記憶體晶片15之工作條件,這些工作條 ,,含匯流排16偵測電壓訊號與頻率訊號等,以及 Zfe體晶片15之表面溫度與周圍環境溫度。微處理控制單 9 M343894 元12監控這些工作條件,經過運算比較差異性後,若超過 一設定門檻後立即動態調整其差異值,使該差異值低於該 設定門檻或回復原廠參數標準之狀態。而動態調整的過程 中,工作品質偵測單元13會持續偵測記憶體晶片15之工 作條件,並提供給微處理控制單元12。此外,微處理控制 單元12也會即時顯示記憶體晶片15之工作條件。 在詳細說明本創作的較佳實施例之後,熟悉該項技術 人士可清楚的暸解,在不脫離下述申請專利範圍與精神下 可進行各種變化與改變,且本創作亦不受限於說明書中所 舉實施例的實施方式。 M343894 【圖式簡單說明】 第一圖係顯示本創作智慧型記憶體模組的方塊圖。 第二圖係顯示本創作狀態偵測調整之流程圖。 第三圖係顯示習知記憶體模組插接記憶體插槽之立體 【主要元件符號說明】 I —記憶體插槽 2…習知記憶體模組 10—-智慧型記憶體模組 II —輸出指不早元 12— 微處理控制早兀 13— 工作品質^[貞測早兀 14— 制冷晶片裝置 15— 記憶體晶片 16— 訊號匯流排M343894 VIII. New Description: [New Technology Field] This creation is about a memory module, especially a smart memory module including state detection and dynamic adjustment, and its state detection and adjustment device. . [Prior Art] Dual ln] in Memory Modules (DIMMs) are used in 10 traditional applications. They are only used for accessing data on computer systems. The required power and signal quality are passive. The memory slot provided on the computer motherboard. The conventional memory module does not include the function of state detection and dynamic adjustment. Generally, consumers cannot know whether the memory module (DIMM) operates in a good and correct system environment. - Please refer to the third figure to show a perspective view of the conventional memory module 2 plugged into the memory slot 1. The conventional memory module 2 is a module (M〇dule) for assembling a packaged memory chip on a printed circuit board for use in a personal computer, a notebook type, etc., and it is also included. A small circuit board with a set of memory crystals. Since each side has two rows of pins, the memory and the module can provide a wider access path, and the two rows of pins are used to connect all the control and address lines of the memory control body H and the memory w. Used with data lines. The conventional memory module can be placed on the front or the back of the memory chip according to the design structure, the memory module does not need to be inserted into the memory slot in pairs, and it can be combined with other different capacities of the same number of pins, The speed of the memory module is mixed and used. For example, it can be combined with a 2GB memory module on the motherboard. 5 M343894 However, the operating conditions of the memory module are very sensitive to the stability of the system. If the power supply is poor, or the capacitor on the motherboard is crazy, the voltage/current/frequency signal required by the memory will be generated. Poor quality or instability will cause the system to reboot, system crash or error, the system has no way to read/write the memory unit normally...etc. In addition, the conventional memory module adopts air-cooling. If the internal flow of the main body casing is not completed, it cannot immediately generate such as CPU, chipset, VGA chip, power supply, hard disk device, optical disk drive, etc. The heat is discharged, which causes thermal cycling, which in turn affects the working conditions of the memory chip. [New Content] One of the purposes of this creation is to provide a smart memory module that includes state detection and dynamic adjustment. One of the aims of the present invention is to provide a state detection and dynamic adjustment device that is inserted into a memory slot to detect the state of a memory card adjacent to a memory slot and adjust the operating conditions of the system environment. The present invention provides a smart memory module comprising: a plurality of memory chips; a signal bus bar electrically connected to the memory chips; and a work quality detecting unit for detecting working conditions of the memory chips And outputting a detection signal; a refrigerating chip device mounted on the memory chips and adjusting an operating temperature of the memory chips; a micro processing control unit receiving the detection signals and outputting an indication signal and a control The signal processing unit responds to the detection signal to output the control signal to the cooling chip device; and an output indicating unit receives the indication signal to display an operating state of the memory chips. 6 M343894 The present invention provides a state detection adjustment device implemented in a memory module having a plurality of memory chips and a signal bus, the state detection adjustment device comprising: a work quality detection a unit for detecting operating conditions of the memory chips and outputting a detection signal; a refrigerating chip device mounted on the memory chips and adjusting an operating temperature of the memory chips; and a micro processing control unit receiving The detection signal is outputting an indication signal and a control signal, the microprocessor control unit is responsive to the detection signal to output the control signal to the cooling chip device; and an output indicating unit is configured to receive the indication signal to display the signal The working state of the memory chip. The present invention provides a state detection adjustment device, comprising: a signal bus, electrically connected to a memory slot; a work quality detecting unit, detecting the plugging from the signal bus into another memory slot a working condition of the memory card, and outputting a detection signal; a micro processing control unit receiving the detection signal and outputting an indication signal; and an output indication unit receiving the indication signal to display the working state of the memory card . The intelligent memory module and its state detection adjustment device provided by the creation can not only allow the user to immediately grasp the operation state of the memory chip of the memory module, but also dynamically adjust the system environment of the memory chip. Operating conditions, including: voltage, frequency, temperature, etc., to improve the stability of the system. The above-mentioned objects and features of the present invention will be described in detail with reference to the accompanying drawings, which are to be construed as illustrative and not restricting or limiting. [Embodiment] 7 M343894 Although the present invention will be fully described with reference to the drawings containing the preferred embodiments of the present invention, it should be understood that those skilled in the art can modify the creations described herein while obtaining The effect of this creation. Therefore, it is to be understood that the following description is a broad disclosure of those skilled in the art and is not intended to limit the invention. Please refer to the first figure for a block diagram of the Creative Smart Memory Module. The intelligent memory module 1 of the present invention assembles a plurality of packaged memory 10 chips 15 onto a printed circuit board to form a module, and the pins on both sides of the printed circuit board are signal bus bars 16. The circuit layout of the printed circuit board electrically connects a plurality of memory chips 15 and signal bus bars 16. The creative intelligent memory module 1 can be plugged into the conventional memory slot 1 so that the signal sink/flow row 16 receives signals from the motherboard, and the signals include voltage signals, _ frequency signals, data signals and several Control signal. The creative intelligent memory module 1 has a state detection and dynamic adjustment function, and further includes a state detection adjustment device. The state detection adjusting device includes an output indicating unit u, a micro processing control unit 12, a quality detecting unit 13 and a cooling chip device 14. Work quality detection • The unit 13 detects the working strips of the memory chip 15 from the signal bus 16 and includes voltage signals and frequency signals. The work quality detecting unit 13 also includes a temperature sensing device for sensing the surface temperature of the memory chip 15 and the ambient temperature, and the quality detecting unit 13 provides all the price measurement results to the microprocessor control unit. 12 is monitored, and the microprocessor control unit 12 also supplies the detected voltage, frequency and temperature indication signals to the output finger unit 11, so that the Z can easily know the working state of the memory. The output finger unit 11 can be represented by a #day format, a liquid crystal display, or by a plurality of light emitting diodes 8 M343894 (LED). The microprocessor control unit 12 monitors the electronic signals such as voltage and frequency in accordance with the product specifications of the memory chip 15. In the present embodiment, the microprocessor control unit 12 dynamically monitors the difference value of the electronic signals of the memory chip 15 based on the original parameter standard of the memory chip 15. When the micro-processing control unit 12 determines that the difference value exceeds a set threshold, for example, when the detected electronic signal differs from the original parameter standard by 10%, the dynamic adjustment mode is entered, so that the difference value is lower than the set threshold or the reply. The status of the original parameter standard. In addition, the working state of the memory chip 15 is adjusted to adjust the temperature of the memory chip 15 by using the f-chip device 14. The micro-processing 'control unit 12 obtains the surface temperature of the memory chip 15' and the ambient temperature from the work quality detecting unit 13, and calculates the difference to generate a control=number, and outputs the control signal to the refrigerating wafer device 14. The cooling crystal device 14 includes a refrigerating wafer, one side of which is attached to the surface of the memory J sheet 15 and the other side is provided with a heat sink, wherein the refrigerating wafer is rectified by the micro processing control unit 12 Control the signal to adjust the surface temperature of the memory. The temperature control of the refrigerating wafer is a technical means familiar to those skilled in the art. 1 Mai, the second picture shows the flow chart of the creation state detection adjustment. The process of state detection adjustment is applied to the smart record module shown in the first figure. The f-state detection and adjustment process includes: detecting the working conditions of the memory chip 15 by the working quality horizontal measurement early detection, the working bar, including the bus bar 16 detecting the voltage signal and the frequency signal, and the Zfe body wafer 15 surface temperature and ambient temperature. Micro-Processing Control Sheet 9 M343894 Element 12 monitors these working conditions. After comparing the differences, if the difference is exceeded, the difference value is dynamically adjusted immediately after the threshold is set, so that the difference value is lower than the setting threshold or the state of the original factory parameter. . During the dynamic adjustment, the work quality detecting unit 13 continuously detects the working conditions of the memory chip 15 and supplies it to the micro processing control unit 12. In addition, the microprocessor control unit 12 also displays the operating conditions of the memory chip 15 in real time. After a detailed description of the preferred embodiments of the present invention, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the scope and spirit of Embodiments of the illustrated embodiments. M343894 [Simple description of the diagram] The first diagram shows the block diagram of the creative intelligent memory module. The second figure shows the flow chart of the creation state detection adjustment. The third figure shows the stereo of the conventional memory module plug-in memory slot [main component symbol description] I - memory slot 2... conventional memory module 10 - intelligent memory module II - Output refers to not early element 12 - micro-processing control early 兀 13 - work quality ^ [贞 兀 兀 14 - cooling chip device 15 - memory chip 16 - signal bus

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Claims (1)

M343894 九、申請專利範圍: 1 · 一種智慧型g己憶體模組,包含: 複數個記憶體晶片; 訊號匯流排,電性連接該等記憶體晶片 作tm質偵測單元,偵測該等記憶體晶片之工 ,並輸出一偵測訊號 且調整該M343894 IX. Patent application scope: 1 · A smart g-remember module, comprising: a plurality of memory chips; a signal bus, electrically connecting the memory chips as a tm quality detecting unit, detecting the same Memory chip work, and output a detection signal and adjust the 等記憶體晶片之:义溫:f於轉a己憶體晶片 一士 ^微處理控制單元,接收前述偵測訊號且輸出一指 ^號與-控龍號,前述微處難制單元響應該價測 訊號,以輸出該控制訊號至前述制冷晶片裝置;以及、 一輸出指示單元,接收前述指示信號以顯示該 憶體晶片之工作狀態。 、^ 2·如申It利範圍第1項所述之智慧型記憶體模組,其中該 工作品質偵測單元從該訊號匯流排偵測電壓或電流或頻 率。 、 3·如申請專利範圍第2項所述之智慧型記憶體模組,其中該 微處理控制單元根據偵測之電壓或電流或頻率計算差異 並判斷該差異值超過一設定門檻後,進入動態調整 才旲式’使該差異值低於該設定門檻。 4·如申清專利範圍第1項所述之智慧型記憶體模組,其中該 工作品質偵測單元包含溫度感測器,而該溫度感測器偵 測記,體晶片之表面溫度與周圍環境溫度,前述微處理 控制單元據以決定該控制訊號。 5·如申請專利範圍第1項所述之智慧型記憶體模組,其中該 12 M343894 制冷晶片裝置包含一制冷晶片,該制冷晶片的一面貼於 記憶^晶片之表面,而另—面配置散熱片。 ' 6·如申^專利範圍第i項所述之智慧型記憶體模組,其中該 輸出指示單元顯示的工作狀態包含電壓或電流或頻率^ έ己憶體晶片之溫度。 7. —種狀態偵測調整裝置,實施於一記憶體模組,該記憶 體模組具有複數個記憶體晶片與一訊號匯流排,該狀^ 偵測調整裝置包含: 一工作品質偵測單元,偵測該等記憶體晶片之工作 條件,並輸出一偵測訊號; 一制冷晶片裝置,安裝於該等記憶體晶片且調整該 等記憶體晶片之工作溫度; 一微處理控制單元,接收前述偵測訊號且輸出一指 示信號與一控制訊號,前述微處理控制單元響應該偵測 訊號,以輸出該控制訊號至前述制冷晶片裝置;以及 一輸出指示單元,接收前述指示信號以顯示該等記 憶體晶片之工作狀態。 8·如申請專利範圍第7項所述之狀態偵測調整裝置,其中該 工作品質偵測單元從該記憶體模組的訊號匯流排偵測電 壓或電流或頻率。 9·如申請專利範圍第8項所述之狀態偵測調整裝置,其中該 微處理控制單元根據偵測之電壓或電流或頻率計算差異 值,並判斷該差異值超過一設定門檻後,進入動態調整 模式,使該差異值低於該設定門檻。 10·如申請專利範圍第7項所述之狀態偵測調整裝置’其中 13 M343894 該工作品質❹j單元包含溫度感測器,而該溫度感測器 侦測記憶體晶片之表面溫度與周圍環境溫度,前述微處 理控制單元據以決定該控制訊號。 11.如申請專利範圍第7項所述之狀態偵測調整裝置,其中 該制冷晶片裝置包含-制冷晶片,該制冷晶片的一面貼 於記憶體晶片之表面,而另一面配置散熱片。 12·如申請專利範圍第7項所述之狀態偵測調整裝置,其中 該輸出指示單元顯示的工作狀態包含電壓或電流或步員 或記憶體晶片之溫度。 ' 13· —種狀態偵測調整裝置,包含: 一訊號匯流排’電氣連接於一記憶體插槽; 一工作品質偵測單元,從該訊號匯流排偵測複數記 憶體晶片之工作條件,並輸出一 <貞測訊號; 一微處理控制單元,接收前述偵測訊號且輪出一 示信號;以及 3 一輸出指示單元,接收前述指示信號以顯示誃 體卡之工作狀態。 14·如申請專利範圍第13項所述之狀態偵測調整裝置,一 歩包含-制冷日日日片裝置’安裝於該等記憶體日日日片且 該等記憶體晶片之工作溫度。 15·如申請專利範圍第14項所述之狀態偵測調整裳 該微處理控制單元輸出一控制訊號,且前述微产二 單元響應該债測訊號,以輸出該控制訊號至前二二 片裝置。 7曰曰 14The memory of the memory: the temperature of the f: the turn-on-one memory chip, the micro-processing control unit, receives the aforementioned detection signal and outputs a finger and a control dragon number, and the aforementioned micro-hard-to-manufacture unit responds to the a price measurement signal for outputting the control signal to the cooling chip device; and an output indicating unit for receiving the indication signal to display an operating state of the memory chip. 2. The intelligent memory module of claim 1, wherein the quality detecting unit detects voltage or current or frequency from the signal bus. 3. The intelligent memory module according to claim 2, wherein the microprocessor control unit calculates a difference according to the detected voltage or current or frequency and determines that the difference value exceeds a set threshold, and then enters the dynamic Adjust the value to make the difference below the set threshold. 4. The intelligent memory module according to claim 1, wherein the working quality detecting unit comprises a temperature sensor, and the temperature sensor detects the surface temperature of the body wafer and the surrounding area. The ambient temperature, the microprocessor control unit determines the control signal accordingly. 5. The intelligent memory module of claim 1, wherein the 12 M343894 refrigerating wafer device comprises a refrigerating wafer, one side of which is attached to the surface of the memory chip, and the other surface is configured to dissipate heat. sheet. The intelligent memory module of claim i, wherein the output indicating unit displays an operating state comprising a voltage or a current or a frequency of the memory of the memory. 7. The state detection adjusting device is implemented in a memory module, the memory module has a plurality of memory chips and a signal bus, and the detecting device comprises: a working quality detecting unit Detecting operating conditions of the memory chips and outputting a detection signal; a refrigerating chip device mounted on the memory chips and adjusting an operating temperature of the memory chips; a micro processing control unit receiving the foregoing Detecting a signal and outputting an indication signal and a control signal, the microprocessor control unit responding to the detection signal to output the control signal to the cooling chip device; and an output indicating unit receiving the indication signal to display the memory The working state of the body wafer. 8. The state detection adjusting device of claim 7, wherein the quality detecting unit detects a voltage or a current or a frequency from a signal bus of the memory module. 9. The state detection adjusting device according to claim 8, wherein the microprocessor control unit calculates a difference value according to the detected voltage or current or frequency, and determines that the difference value exceeds a set threshold, and enters the dynamic state. Adjust the mode so that the difference is below the set threshold. 10. The state detection adjusting device as described in claim 7 wherein 13 M343894 the working quality unit includes a temperature sensor, and the temperature sensor detects the surface temperature of the memory chip and the ambient temperature. The micro processing control unit determines the control signal accordingly. 11. The state detection adjusting device of claim 7, wherein the refrigerating wafer device comprises a refrigerating wafer having one surface attached to a surface of the memory chip and the other surface being provided with a heat sink. 12. The state detection adjusting device of claim 7, wherein the output indicating unit displays an operating state comprising a voltage or a current or a temperature of the stepper or the memory chip. a 13-state state detecting and adjusting device, comprising: a signal bus bar electrically connected to a memory slot; a work quality detecting unit detecting a working condition of the plurality of memory chips from the signal bus bar, and Outputting a <test signal; a microprocessor control unit receiving the aforementioned detection signal and rotating a signal; and an output indicating unit receiving the indication signal to display the working state of the body card. 14. The state detection adjusting device according to claim 13 of the invention, wherein the cooling-day day-and-day film device is mounted on the memory day-day film and the operating temperature of the memory chips. 15. The state detection adjustment according to claim 14 of the patent application scope, the microprocessor control unit outputs a control signal, and the micro-production unit responds to the debt measurement signal to output the control signal to the first two-second device. . 7曰曰 14
TW97209888U 2008-06-05 2008-06-05 Intelligent memory module and its status detection and adjustment device thereof TWM343894U (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613668B (en) * 2016-05-27 2018-02-01 海盜船電子股份有限公司 Dual inline memory module with temperature-sensing scenario mode
TWI689812B (en) * 2018-11-30 2020-04-01 英業達股份有限公司 Method of locating the location of an error of a memory device
TWI709077B (en) * 2019-08-14 2020-11-01 搏盟科技股份有限公司 Display device for memory operation status
TWI757216B (en) * 2021-07-23 2022-03-01 群聯電子股份有限公司 Temperature control method, memory storage device and memory control circuit unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613668B (en) * 2016-05-27 2018-02-01 海盜船電子股份有限公司 Dual inline memory module with temperature-sensing scenario mode
TWI689812B (en) * 2018-11-30 2020-04-01 英業達股份有限公司 Method of locating the location of an error of a memory device
TWI709077B (en) * 2019-08-14 2020-11-01 搏盟科技股份有限公司 Display device for memory operation status
TWI757216B (en) * 2021-07-23 2022-03-01 群聯電子股份有限公司 Temperature control method, memory storage device and memory control circuit unit

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