M336536 八、新型說明： 【新型所屬之技術領域】 本創作係與光感測模組有關，特別是有關於一種光感 測模組封裝結構。 【先前技術】 /月參閱第四圖，習知光感测模組封裝結構(1)主要包含 有，基板(2)、一光感測晶片（3)、一封裝層(4)以及一透光 玻耦(5)，a亥光感測晶片（3)設於該基板(2)頂側且經由多數金 線⑹電性連結該基板⑺；該封裝層⑷覆設於該以模壓方式 (molding)包覆該基板(2)以及該光感測晶片之作用區（乃 以^卜的部分’該封裝層(4)形成—對應該光制晶片⑺之作 1區⑺之穿孔⑻；最後，將該透光玻璃(5)裝設於該穿孔(8) 端緣處，藉以賴封裝光感測模組以及倾該光感測晶 之目的。 15 、然而’此種方式需要先對該封裝層⑷於該穿孔(8)端緣 • 處進行切削擴孔或佈膠的程序後，才能固設該透光玻璃 (5);換言之，習知光感測模組封裝結構之加工步續繁瑣， 具有耗費工時之缺點。 、 20 综上所陳，習知光感測模組封裝結構具有上述之缺 而有待改進。 、 【新型内容】 本創作之主要目的在於提供一種光感測模組封裝衾士 構，其能夠簡化光感職組的加I步驟，具有縮短光 4 M336536 模組封裝時間之特色。 么士為達成上述目白勺，本創作所提供-種光感測模組封裝 、-構包^有·-基板；_光感測晶片係設於該基板且具 作用區，一透光玻璃係貼抵於該光感測晶片表面且遮 5敝該作用區；一封裝層係以模壓方式(molding)包覆該基 板σ亥光感’則曰曰片外圍部分以及該透光玻璃側緣部分且顯 露該作用區。 藉此，本創作所提供光感測模組封裝結構透過上述結 構其此夠在形成該封裝層的程序時對該透光玻璃進行固 1〇 "又，進而免除對該封裝層進行切削擴孔或佈膠的程序，達 到簡化光感測模組的加工步驟之目的；其相較於習用者， 具有纟倍短光感測模組封裝時間之特色。 【實施方式】 15 為了詳細說明本創作之結構、特徵及功效所在，茲舉 以下較佳實施例並配合圖式說明如後，其中： 第一圖為本創作第一較佳實施例之結構示意圖。 第二圖為本創作第二較佳實施例之結構示意圖。 第三圖為本創作第三較佳實施例之結構示意圖。 20 請參閱第一圖，本創作第一較佳實施例所提供光感測 模組封裝結構(10)，包含有：一基板(20)、一光感測晶片 (30)、一透光玻璃(4〇)以及一封裝層（5〇)。 該基板(20)係為陶瓷基板，該基板(2〇)頂部具有多數焊 墊(22) ’以供與該光感測晶片（3〇)電性連接；該基板(2〇)係 5 M336536 與習知者相同，在此容不贅述。 該光感測晶片（30)係設於該基板(2〇)且具有一作用區 (32)以及多數位於該光感測晶片（3〇)頂部之焊墊(料）；該基 板(20)與該光感測晶片（3〇)係選自以打線以及球閘陣列(ball 5 gate array ; BGA)其中一種方式電性連接；本實施例中，該 基板(2 0)與該光感測晶片（3 〇)係透過多數金線(3 6)以打線方 式電性連接與該基板(20)之焊墊(22)與該光感測晶片（30)之 丈于墊(34)，在此僅為舉例說明而並非做為限制要件。該光感 測晶片（30)係選自 cCD(charge-coupled device)、 i〇 CMOS(COmplementary metal 〇xide 记如識—㈣以及 LED(light-emittingdi〇de)其中一種；本實施例中，該光感測 晶片（30)選以CCD為例，在此僅為舉例說明而並非做為限 制要件。 該透光玻璃(40)係貼抵於該光感測晶片（3〇)表面且遮 15蔽該作用區(32)，該透光玻璃(4〇)係具有偏光效果，用以提 供特定光學效果。 ^亥封I層（50)係以模壓方式包覆該基板 (20)、該光感測晶片（3〇)外圍部分以及該透光玻璃(4…側緣 部分而形成一對應該光感測晶片（3〇)之作用區（32)之穿孔 μ (52)，用以顯露該作用區(32);該穿孔(52)係自該基板⑺ 側往外界方向逐漸擴張，用以供外界光線通過而投射於該 作用區(32);該透光玻璃(40)之側緣部分則藉由該封裝層 形成固設效果。其中，該封裝層（50)係選自以環氧脂 (epoxy resin)、熱硬化材料以及光可硬化膠其中一種封裝材 6 M336536 料所製成；本實施例中，該封裝層（5〇)選以環氧基樹脂為 例，在此僅為舉例說明而並非做為限制要件。 經由上述結構’本實施例能多句在形成該封裝層(5〇)的程 序時對直接該透光_(4_緣部分進行固設，進而免除對 5該封裝層(50)進行切削擴孔或佈膠的程序，達到簡化光感測 模、、且的加工步驟之目的，藉此，本實施例相較於習用者， 具有縮短光感測模組封裝時間之特色。再者，該透光玻璃(4〇) 係直接貼抵於該光感測晶片（3〇)之作用區⑽而具有提供 較佳透光率的優點；本實施例經創作人測試，透光率可達 10 94%以上。 ^凊麥閱第二圖，本創作第二較佳實施例所提供光感測 杈組封裝結構(12)，其結構大致與第一較佳實施例相同，同 樣匕δ有·基板(6〇)、一光感測晶片（70)、一透光玻璃(8〇) 以及一封裝層（90);惟，其差異在於：本實施例中，該基板 15 (6〇)與該光感測晶片（70)係透過多數錫球(72)以球閘陣列方 式電性連接該基板(6〇)之焊墊(62)與該光感測晶片（7〇)之焊 墊(7句，該基板(60)直接形成一對應該光感測晶片（7〇)之作 用區(76)的穿孔(64)，用以顯露該作用區（76)，進而使外界 光線經由通過穿孔(64)而投射於該作用區(76)。其目的在於 2〇說明本創作亦適用於以球閘陣列方式電性連接該基板(6〇) 與該光感測晶片(70)之場合。藉此，本實施例同樣可以達到 與第一較佳實施例相同之功效，並提供另一種實施態樣。 請參閱第三圖，本創作第三較佳實施例所提供光感测 楔組封裝結構(14)，其結構大致與第一較佳實施例相同，同 7 M336536 樣包含有：一基板(100)、一光感測晶片（110)、一光感測晶 片（120)以及一封裝層（130);惟，其差異在於：該基板(100) 係以導線架為例，其目的在於說明本創作亦適用於以導線 架方式承載該光感測晶片（110)之場合。藉此，本實施例同 5 樣可以達到與第一較佳實施例相同之功效，並提供又一種 實施態樣。 本創作於前揭實施例中所揭露的構成元件，僅為舉例 說明，並非用來限制本案之範圍，其他等效元件的替代或 變化，亦應為本案之申請專利範圍所涵蓋。 M336536 【圖式簡單說明】 ，一圖為本創作第一較佳實施例之結構示意圖。 第二圖為本創作第二較佳實施例之結構示意圖。 第二圖為本創作第三較佳實施例之結構示意圖。 第四圖為習知光感測模組之封裝結構示意圖。M336536 VIII. New Description: [New Technology Field] This creation is related to the light sensing module, especially regarding a light sensing module package structure. [Prior Art] / month Referring to the fourth figure, the conventional light sensing module package structure (1) mainly comprises a substrate (2), a light sensing chip (3), an encapsulation layer (4) and a transparent glass. The coupling (5), the a-light sensing chip (3) is disposed on the top side of the substrate (2) and electrically connected to the substrate (7) via a plurality of gold wires (6); the encapsulation layer (4) is coated on the molding mode Coating the substrate (2) and the active area of the photo-sensing wafer (formed as a portion of the encapsulation layer (4) - a perforation (8) corresponding to the region 1 (7) of the optical wafer (7); finally, The light-transmissive glass (5) is disposed at an end edge of the through hole (8) for encapsulating the light sensing module and for embossing the light sensing crystal. 15 However, in this manner, the packaging layer needs to be first (4) The light-transmissive glass (5) can be fixed after the process of cutting and reaming or laminating at the end of the perforation (8); in other words, the processing of the conventional light-sensing module packaging structure is cumbersome and costly. The shortcomings of working hours. 20 In summary, the package structure of the light sensor module has the above-mentioned shortcomings and needs to be improved. [New content] The main purpose of the invention is to provide a light sensing module package gentleman structure, which can simplify the adding step of the light sensing group and has the feature of shortening the packaging time of the light 4 M336536 module. The sorcerer achieves the above purpose, the creation Providing a light sensing module package, a package, and a substrate; the light sensing chip is disposed on the substrate and has an active area, and a light transmissive glass is attached to the surface of the light sensing wafer and Covering the active area; an encapsulating layer is formed by molding the substrate to cover the peripheral portion of the wafer and the side portion of the transparent glass and exposing the active region. The optical sensing module package structure provided by the creation device can be solidified by the above structure when the program for forming the encapsulation layer is completed, and further, the engraving and reaming or the lagging of the encapsulation layer is eliminated. The program achieves the purpose of simplifying the processing steps of the light sensing module; compared with the conventional one, it has the characteristics of the packaging time of the short light sensing module. [Embodiment] 15 In order to explain the structure of the creation, Features and functions, The following is a schematic view of the first preferred embodiment of the present invention. The second drawing is a schematic structural view of the second preferred embodiment of the present invention. FIG. 1 is a schematic view showing a structure of a light sensing module package (10) according to a first preferred embodiment of the present invention, comprising: a substrate (20) a light sensing chip (30), a light transmissive glass (4 〇), and an encapsulation layer (5 〇). The substrate (20) is a ceramic substrate, and the substrate (2 〇) has a plurality of pads on the top (22) 'For the purpose of electrically connecting to the photo-sensing wafer (3〇); the substrate (2〇) is the same as the conventional one, and is not described here. The photo-sensing wafer (30) is disposed on the substrate (2) and has an active region (32) and a plurality of pads (materials) located on the top of the photo-sensing wafer (3); the substrate (20) The light sensing chip (3〇) is selected from one of a wire bonding and a ball bump array (BGA). In this embodiment, the substrate (20) and the light sensing device The chip (3 〇) is electrically connected to the pad (22) of the substrate (20) and the pad (34) of the photo sensing chip (30) through a plurality of gold wires (36). This is for illustrative purposes only and is not intended as a limitation. The light sensing chip (30) is selected from one of a cCD (charge-coupled device), an i CMOS (COmplementary metal 〇xide), and an LED (light-emitting); in this embodiment, The light sensing wafer (30) is exemplified by a CCD, which is merely an example and is not intended to be a limitation. The light transmissive glass (40) is attached to the surface of the light sensing wafer (3 且) and covers 15 Covering the active area (32), the light transmissive glass (4〇) has a polarizing effect for providing a specific optical effect. The Hi-I layer (50) is molded to coat the substrate (20), the light Sensing the peripheral portion of the wafer (3 〇) and the light-transmissive glass (4... side edge portion to form a pair of perforations μ (52) of the active region (32) of the photo-sensing wafer (3) for revealing An action area (32); the perforation (52) is gradually expanded from the side of the substrate (7) toward the outside, for external light to pass through and projected onto the active area (32); the side edge portion of the transparent glass (40) And forming a fixing effect by the encapsulating layer, wherein the encapsulating layer (50) is selected from the group consisting of an epoxy resin, a thermosetting material, and a light hardenable layer. The adhesive is made of one of the packaging materials 6 M336536; in this embodiment, the encapsulating layer (5〇) is selected as an epoxy resin, and is merely an example and not a limitation. In this embodiment, the light transmissive_(4_edge portion is directly fixed in the process of forming the encapsulation layer (5〇), and the encapsulation layer (50) of the encapsulation layer (50) is prevented from being cut or expanded. The program achieves the purpose of simplifying the optical sensing mode and the processing steps, thereby, the embodiment has the characteristics of shortening the packaging time of the light sensing module compared with the conventional one. Furthermore, the transparent glass ( 4〇) is directly attached to the active area (10) of the photo-sensing wafer (3) to have the advantage of providing better light transmittance; the embodiment has been tested by the author, and the light transmittance is up to 10 94% or more. The second embodiment of the present invention provides a photo-sensing 杈 group package structure (12) having a structure substantially the same as that of the first preferred embodiment, and the same 匕δ·substrate (6〇) a light sensing wafer (70), a light transmissive glass (8 inch), and an encapsulation layer (90); however, the difference is that In this embodiment, the substrate 15 (6〇) and the photo-sensing wafer (70) are electrically connected to the bonding pad (62) of the substrate (6〇) by a ball gate array through a plurality of solder balls (72). The photo-sensing wafer (7 〇) pad (7 sentences, the substrate (60) directly forms a pair of perforations (64) of the active area (76) of the photo-sensing wafer (7 ,) for revealing The active area (76), in turn, causes external light to be projected onto the active area (76) via the perforations (64). The purpose is to demonstrate that the present invention is also applicable to the case where the substrate (6 〇) and the photo sensing wafer (70) are electrically connected in a ball gate array manner. Thereby, the present embodiment can also achieve the same effects as the first preferred embodiment, and provide another embodiment. Referring to the third embodiment, the optical sensing wedge package structure (14) provided in the third preferred embodiment of the present invention has a structure substantially the same as that of the first preferred embodiment. The same as the 7 M336536 sample includes: a substrate (100) a light sensing chip (110), a light sensing chip (120), and an encapsulation layer (130); however, the difference is that the substrate (100) is exemplified by a lead frame, and the purpose thereof is to illustrate The creation is also applicable to the case where the photo-sensing wafer (110) is carried by a lead frame. Thereby, the present embodiment can achieve the same effects as the first preferred embodiment and provide another embodiment. The constituting elements disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention. The alternatives or variations of other equivalent elements are also covered by the scope of the patent application. M336536 [Simplified description of the drawings], a diagram is a schematic structural view of the first preferred embodiment of the creation. The second figure is a schematic structural view of a second preferred embodiment of the present invention. The second figure is a schematic structural view of a third preferred embodiment of the present invention. The fourth figure is a schematic diagram of the package structure of the conventional light sensing module.
【主要元件符號說明】 封裝結構(10) 基板(20) 焊墊(22) 光感測晶片（30) 10 作用區(32) 焊墊(34) 金線(36) 透光玻璃(40) 封裝層(50) 穿孔(52) 封裝結構(12) 基板(60) 15 焊墊(62) 穿孔(64) 光感測晶片（70) 錫球(72) 焊墊(74) 作用區(76) 透光玻璃(80) 封裝層(90) 20 封裝結構(14) 基板(100) 光感測晶片（110) 封裝層（130) 透光玻璃(120) 9[Main component symbol description] Package structure (10) Substrate (20) Solder pad (22) Light sensing chip (30) 10 Active area (32) Solder pad (34) Gold wire (36) Light-transmissive glass (40) Package Layer (50) Perforation (52) Package Structure (12) Substrate (60) 15 Solder Pad (62) Perforation (64) Light Sensing Wafer (70) Tin Ball (72) Solder Pad (74) Action Area (76) Light glass (80) Encapsulation layer (90) 20 Package structure (14) Substrate (100) Photo-sensing wafer (110) Encapsulation layer (130) Light-transmissive glass (120) 9