TWM293527U - Substrate processing chamber component having surface which adheres process residues - Google Patents

Substrate processing chamber component having surface which adheres process residues Download PDF

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Publication number
TWM293527U
TWM293527U TW94210676U TW94210676U TWM293527U TW M293527 U TWM293527 U TW M293527U TW 94210676 U TW94210676 U TW 94210676U TW 94210676 U TW94210676 U TW 94210676U TW M293527 U TWM293527 U TW M293527U
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TW
Taiwan
Prior art keywords
substrate
grooves
chamber
processing
depth
Prior art date
Application number
TW94210676U
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Chinese (zh)
Inventor
Kenneth Tsai
Laxman Murugesh
Brian T West
Hong Wang
Mao-Cheng Li
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Applied Materials Inc
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Priority claimed from US10/880,235 external-priority patent/US20060005767A1/en
Priority claimed from US11/037,587 external-priority patent/US20060188742A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TWM293527U publication Critical patent/TWM293527U/en

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Description

M293527 八、新塑說明： 【新难所屬技^^領】 新型領域 本創作的實施例係有關於一種用於基材加工腔室之元 5 件。 【先前技術3 新型背景 在基材加工時，例如半導體晶圓及顯示器，將一基材 放置於一加工腔室内且曝置於氣體激發部中以沉積或蝕刻 10該基材上的材料。一般加工腔室包括加工元件，包含一密 閉壁，其包圍一加工區域，一氣體供應部提供氣體於該腔 至内’一氣體激發部以激發加工氣體對該基材加工，一基 材支撐部，及一排氣部。該等加工腔室元件亦可包括一加 工套件，其一般包含一或多個部件，可助於加工期間固定 15與防護該基材。加工套件元件的一例子是一固持夾，其可 至少部分地包圍一基材的周邊以將該基材固定於該支撐部 上。該固持夾亦可至少部分地蓋住一或多個基材及支撐部 以減少其上加工殘渣的沉積。 在對加工腔室内的基材加工期間，會產生加工殘渣， 20其:能沉積於該腔室内的内表面上。舉例來說，加工殘潰 可月二積於包含基材支擇表面及密閉壁的表面之表面上。 在後貝的加工週期中，沉積的加工殘渣可能自内腔室表面” 飄政離開％落於該基材上且污染該基材。為解決此問題， 4腔至内的疋件表面通常是具有特定紋理㈣加冲以降低 M293527 因加工殘錢成的基材污染。加讀渣會吸附於這些且有 特定紋_表面上，且因加域賴造成的 生率會降低。 ^ a J只例中，具有特定紋理的元件表面的形成 疋將—電雜光束指向—元件表面上叫相部及凸部， t加工殘奸更易吸崎上。該具㈣枝理料件表面 ，、可猎由純-具有特枝理的被層於—元件上所設置而M293527 VIII. New Plastic Description: [New Difficulty Technology] New Field The embodiment of this creation relates to a piece of material for a substrate processing chamber. [Prior Art 3] In the processing of substrates, such as semiconductor wafers and displays, a substrate is placed in a processing chamber and exposed to a gas excitation portion to deposit or etch 10 materials on the substrate. The general processing chamber includes a processing component including a sealed wall surrounding a processing region, a gas supply portion supplying a gas to the chamber to the inside of a gas excitation portion for exciting a processing gas to process the substrate, and a substrate supporting portion , and a venting department. The processing chamber components can also include a processing kit that generally includes one or more components that aid in securing and protecting the substrate during processing. An example of a processing kit component is a retaining clip that at least partially surrounds a perimeter of a substrate to secure the substrate to the support. The retaining clip can also at least partially cover one or more of the substrate and the support to reduce deposition of processing debris thereon. During processing of the substrate within the processing chamber, processing residues are generated, 20 which can be deposited on the inner surface of the chamber. For example, the processing residue may be accumulated on the surface of the surface including the substrate-receiving surface and the sealing wall. During the processing cycle of the back shell, the deposited processing residue may fall from the surface of the inner chamber to the substrate and contaminate the substrate. To solve this problem, the surface of the chamber from 4 to the inside is usually It has a specific texture (4) plus punching to reduce the substrate contamination of M293527 due to processing of residual money. The slag will be adsorbed on these and have a specific grain surface, and the productivity due to the addition of the domain will be reduced. ^ a J only In the example, the surface of the component with a specific texture is formed—the electric hybrid beam is directed—the surface of the component is called the phase and the convex part, and the processing of the rape is easier to absorb. The surface of the material is hunted. Set by a pure-featured layer on the component

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成、。然而’甚至如此的具有特定紋理之元件表面亦不能充 为地降低加工殘渣所產生的問題。 一舉例來說，通常會產生的問題是，當於具有特定纹理 的疋件上相當小或窄小的紋理特徵，例如於元件表面中的 孔或凹部，太快速地填滿加工殘_ 1要在僅僅些許的 基材加工之後清洗該元件。並且，加工殘輯膜可能，，架橋，， 或塞住於該元件表面巾的孔或凹部，—制可能累積於該 元件表面上的加工殘渣量而不會剝落。此，，架橋，，薄膜亦可 月b不會％、固持住於該紋理表面上，而造成自該表面過早剝 落。因此，習用紋理表面元件通常不容許太大數量的基材 在需要清洗該等元件之前被加工，藉此會降低加工效率且 增加腔室停工期間。並且，相當小或窄小的紋理特徵有時 可能會”鎖定”加工殘渣於該等小特徵中，使得於元件清洗 及翻新加工期間難以將其移除。 舉例來說，加工殘渣可能累積於繞該固持夾的表面上 及該基材納置表面上。因基材納置區的尺寸一般會謹慎地 選定以提供與該基材緊密配合，因此加工殘渣繞於該納置 20 M293527 區的形成可能會導致該基材於該支撐部上的不適當配合， 且甚至將基材”釘黏”於該納置表面及固持夾之一或更多 上。此基材的”釘黏”尤其可能對高溫加工上會有問題，例 如鋁回流加工製程，其中含鋁材料及其他加工殘渣可能回 5 流繞於腔室内的不同表面。 據此，需要減低自一加工腔室内的元件累積之加工殘 渣的剝落。此外需要利用降低元件表面上孔或凹部產生架 橋，能增加元件表面上的加工殘渣之累積量。進一步需要 一元件及方法，能降低基材”釘黏”於一基材支撐部的部位 10 上。 【新型内容】 新型概要 一種元件，具有一元件構造，及一表面，其具有相反 設置之第一及第二螺旋凹槽。於一基材在一基材加工腔室 15 内的激發氣體中加工期間，加工殘渣可吸附於該表面上的 該等螺旋凹槽，藉以降低該基材受加工殘渣的污染。該元 件是藉將相反螺旋凹槽機械加工於該元件構造上來製造。 其中一實例中，該元件具有一紋理表面，其具有一第 一紋理圖案區域，具有數第一紋理特徵，其相互間隔且各 20 具有第一深度及第一密度，及一第二紋理圖案區域，具有 第二紋理特徵，其相互間隔且各具有第二深度及第二密 度。第二深度及第二密度至少其一是不同於第一深度及第 一密度。 該元件的另一種實例是具有一底層（underlying)構造， 7 M293527 具有表面，其具有數徑向間隔的同心凹槽。電子束紋理 凹部形成於相鄰凹槽之間。該元件的製造可藉於該表面上 進行機械加工形成數徑向間隔的同心凹槽，且掃描一電子 束橫過該表面，以形成該等電子束紋理凹部於相鄰凹:之 間。 於另—種實例中，—種用於—基材加工腔室之基材固 、/ ，具有一環，其具有環繞於該腔室内一基材之一環部， 伸::覆蓋該基材的環周。該固持夾具有於該:伸 10 15 20 二曝表露表面，其具有相間隔的滚花脊部及溝 心袞化曝路表面亦可延伸橫過該 的外側面。該滾日Λ 口ρ刀及該裱 圈式簡單說明曝—來形成。 本創作的特徵、特點及優 解。然而，吾人應瞭解各特徵作的只例而得以瞭 僅於特定^㈣者，且以創作中，非 合，其中： 乍匕^這些特徵的任何結 第1圖是加工腔室具有牿々 例之部分剖面側視圖；、、、、理表面的元件的-實施 第u圖是腔室檔板具有形成 、也列之部分剖面側視圖； 、”疋凹槽的表面的 第25圖是環形腔室元件具有 面的只施例之部分剖面側視圖；《有才目對螺旋凹槽的表 弟2C圖是腔室擋板具有第一及 二表面紋理圖案的實 M293527 施例之部分剖免侧視圖； 第3圖是賤室— 施例之部分剖⑽Γ圖具有已藉切割刀片形成有凹槽的實 第4圖是具凹 ^ 一 分剖面側疋件包含圓形邊緣的實施例之部 第5A圖是| 第圖是、 表面的固持夾的實施例之頂視圖； 圖 >、有滾钯表面的固持夾的實施例之剖面側視 1G 圖； 第6A圖是騎堅硬邊 緣的滾花工具的實施例之平面 第6B圖是第6A圖 剖面側視圖； 的滾花工具的堅硬邊緣的實施例之 第7圖是元件且右 之門沾妨播表 U數電子束紋理凹部設於同心凹槽 15to make,. However, even such a surface having a specific texture does not adequately reduce the problems caused by processing residues. For example, a problem that typically arises is that when a relatively small or narrow texture feature on a component having a particular texture, such as a hole or recess in the surface of the component, fills the machining residue too quickly. The component is cleaned after only a few substrate processing. Also, the processed film may be, bridged, or plugged into the holes or recesses of the surface of the component to produce a processing residue that may accumulate on the surface of the component without peeling off. Thus, the bridge, the film may not be retained on the textured surface by the month b, causing premature peeling from the surface. Thus, conventional textured surface elements typically do not allow a large number of substrates to be processed before they need to be cleaned, thereby reducing processing efficiency and increasing chamber downtime. Also, relatively small or narrow texture features can sometimes "lock" the processing residue into the small features, making it difficult to remove them during component cleaning and retreading processes. For example, processing residues may accumulate on the surface surrounding the retaining clip and on the surface on which the substrate is placed. Since the size of the sub-region of the substrate is generally carefully selected to provide a close fit with the substrate, the formation of processing residues around the nano 20 M293527 region may result in improper mating of the substrate on the support portion. And even "nailing" the substrate to one or more of the receiving surface and the retaining clip. The "nail tack" of this substrate may be particularly problematic for high temperature processing, such as an aluminum reflow process in which aluminum containing materials and other processing residues may flow back to different surfaces within the chamber. Accordingly, there is a need to reduce the peeling of processing residues accumulated from components in a processing chamber. In addition, it is necessary to reduce the amount of machining residue on the surface of the component by reducing the number of holes or recesses in the surface of the component to create a bridge. There is a further need for a component and method for reducing the adhesion of a substrate to a portion 10 of a substrate support. [New Content] A new type of component having a component construction and a surface having opposite first and second spiral grooves. During processing of the substrate in an excitation gas in a substrate processing chamber 15, the processing residue can be adsorbed to the spiral grooves on the surface, thereby reducing contamination of the substrate by processing residues. The component is fabricated by machining the opposite helical groove onto the component construction. In one example, the element has a textured surface having a first textured pattern region having a plurality of first textured features spaced apart from each other and each having a first depth and a first density, and a second textured pattern region And having second texture features spaced apart from one another and each having a second depth and a second density. At least one of the second depth and the second density is different from the first depth and the first density. Another example of this element is having an underlying configuration, 7 M293527 having a surface with a plurality of radially spaced concentric grooves. The electron beam texture recess is formed between adjacent grooves. The component can be fabricated by machining the surface to form a plurality of radially spaced concentric grooves and scanning an electron beam across the surface to form the electron beam texture recesses between adjacent recesses. In another example, the substrate for the substrate processing chamber has a ring having a ring surrounding a substrate in the chamber, extending: a ring covering the substrate week. The retaining clip has a surface that extends from the exposed surface, and has spaced knurled ridges and a grooved exposed surface that extends across the outer side. The rolling Λ ρ ρ knife and the 圈 ring type are simply described as exposure. The characteristics, features and advantages of this creation. However, we should understand that each feature is only a specific ^ (four), and in the creation, non-combination, where: 乍匕 ^ these features of any knot, Figure 1 is a processing chamber with examples Partial cross-sectional side view;,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The chamber element has a partial cross-sectional side view of the embodiment only; "The cousin 2C diagram of the spiral groove is a part of the section M463527 of the chamber baffle having the first and second surface texture patterns. Fig. 3 is a diverting chamber - a partial section of the embodiment (10). The drawing has a groove formed by a cutting blade. The fourth drawing is a part of an embodiment having a concave side section and a side edge containing a circular edge. 5A is a top view of an embodiment of a surface holding clip; Fig.>, a cross-sectional side view 1G view of an embodiment of a holding clip having a palladium-plated surface; and Fig. 6A is a knurling riding a hard edge Figure 6B of the embodiment of the tool is a cross-sectional side view of Figure 6A; Hard edge tool roll flower of the embodiment of FIG. 7 and the right door element is dipped hinder multicast table number of the electron beams texture U provided in the recess 15 concentric grooves

="的實施例之剖繼圖;及 苐8圖疋％戍於 之剖面侧視圖。 表面中的電子束紋理凹部的實施例 【實施冷式】 較佳實施例之詳細說明 如第1圖所示，顯示一基材加工裝置104的一實施例， 其包括一基材加工腔室1⑽，具有數元件100，用以於一氣 體激發部中加工一基材1〇4。一或多個所示腔室106可包括 一元件構造Π，其具有特定紋理的表面22，以致於在基材 104加工期間所產生的加工殘渣可吸附於該元件表面22上 以降低加工基材104被加工殘渣所污染。該等元件1〇〇的紋 20 M293527 理表面22可包含一合屬以 η ”离材，例如鈦、不鏽鋼、銅、鈕、鎢 =至少-種。該紋理表面22亦可包括喊材料，例如氧 Γ氮她、氮切、氧切、石英、碳切、氧化紀、 氧化鍅及减鈦至少—種。可製造或加卫處理具有此紋理 表面22的應用材料實例包括零件編號 0021-17718,0020.00673,0200.0067^002!^^ 9,0021-17717及 002Μ7720。 於一種實例巾，該元件丨⑽包含—表面22，其具有特定 紋理’以藉由減少該表面22上連續段部幻的平均長度及數 10目纟抑制;k該表面22的加工沉積物之片狀或層狀剝落。 在過長的連續段部83上產生的加工沉積物可非常牢固地相 互吸附，藉此可以很長的殘渣條形式自該元件1〇〇剝落，如 此可肐導致在該腔室1〇6中被加工的基材遭到污染。反之， 已研究到被以凸塊或裂隙分開的表面段部，或其他表面中 15斷部，可提供對該表面的加工殘渣更佳的吸附性，且不會 使殘潰輕易地自該表面片狀或層狀剝落。 於一種實例中，一改良式表面22,具有較少數目的過 長連續段部83，其是藉於該表面上分別形成第一及第二螺 旋凹槽80a，b所製成，如第2A及2B圖所示。該等螺旋凹槽 20 80a，b可相互相對。舉例來說，該等凹槽80a，b可為左旋及右 旋凹槽，其以相反方向行進，且可包含相反的螺紋形成於 該表面上。於一較佳實施例中，該等相反螺旋凹槽80a，b包 含一繞該表面22順時針旋轉的右旋螺旋凹槽80a，及一繞該 表面22反時針旋轉的左旋螺旋凹槽80b，如從上所視之。該 M293527 等螺旋凹槽80a，b可相互橫過且交錯以將該元件表面22的實 質上連續段部83之非凹槽部81分開且縮短。於一種實例 中’包含有該等螺旋凹槽80a，b之該表面22實質上沒有一連 續段部83，其長度或於該等凹槽8〇a，b之間的環周是大於約 5 〇.lcm(〇.〇4英吋）。舉例來說，該等連續段部83的平均長度 或環周可為小於約〇.〇5cm ( 0.02英吋）。於一種實例中，該 等連續段部83的平均長度或環周可為自多於〇些許公分至 不多於約0.1cm (0.04英吋）之範圍中。於另一實例中，該 表面22上該等凹槽8〇a，b之間的該等連續段部83可不超過約 10 〇.lcm2的面積（千分之1600平方英吋），舉例來說，該面積 可為自約0.001cm2 (千分之225平方英吋）至約01cm2 (千 分之1600平方英吋）之範圍中。該等相反螺旋凹槽8〇&山形 成一更加不連續的表面來改善加工殘渣對該表面22的吸附 性0 15 第2A及2B圖顯示具有相反螺旋凹槽構形的元件1〇〇之 實施例。舉例來說，第2A圖是顯示一圓柱形元件100的一段 部之實施例，其中一腔室擔板120的一圓柱形段部，使該等 相反螺旋凹槽80a,b形成於該元件1〇〇的内部表面上。於此實 施例中，該等相反螺旋凹槽80a，b垂直延伸橫過該擋板12〇 20 的表面22，而繞該擋板120的一中心軸94螺旋延伸，以形成 螺旋狀凹槽環繞於該擋板表面22至少一部分上。該擋板12〇 的中心軸94一般與該加工腔室106的中心軸一致，如第1圖 所示的實例。舉例來說，一第一螺旋凹槽80a可包含右手指 向，其中該螺旋凹槽80a是以增加該螺旋凹槽80a的長度/轉 11 M293527 (length/tum)’繞該元件1〇〇的表面22順時針旋轉。第二螺旋 凹槽80b可包含左手指向，其中該螺旋凹槽亦是以增加該螺 方疋凹槽的長度/轉(length/turn)，繞該元件的表面22反時針旋 轉。於一種實例中，該等螺旋凹槽80a，b開始於位在朝向該 5 擋板120一端之起始點82a，b處，例如於該擋板120的底部1〇3 處’且繞該擋板12〇的中心軸向上旋轉以終止於位在朝向該 擔板120的一相對端之螺旋終止點84a，b處，例如該擋板120 的頂部101。各凹槽80a，b相對於該中心軸94所形成的適當環 繞角度可為例如至少約45。，例如自約45。至約75。，更 10 可為至少約60。。各螺旋凹槽80a，b的螺旋臂99a，b之間的適 當間距，可為自約(X25cm(0.1英吋）至約1.3cm(0.5英吋）， 例如約0_6cm ( 0_25英对）。 第2B圖是顯示元件100的另一實施例，其為環形且具有 相反螺旋凹槽80a，b形成於一頂面34上。該環形元件1〇〇可包 15含，例如一加工套件⑼的元件，例如固持夾、沉積環128 及固持夾20中至少一種。該等相反螺旋凹槽8如山各以增加 自位於朝向該元件100中心85處之一螺旋起始點82a，b，至位 於朝向該元件100環周87處之一螺旋終止點8如山之凹槽半 徑r，繞該元件100的表面22旋轉。於所示中，該等螺旋凹 20槽80a，b是相對於該元件1〇〇的中心轴_心，且該等相反螺 旋凹槽80a，b-般是相互交又且交錯於該表面^上數點處， 以中斷連續表面段部。各螺旋凹槽8_的螺旋臂990之間 的適當間距，可為自約〇.25cm⑷英忖）至約13咖（〇·5 英对），例如約0.6cm (0·25英忖）。因此，該環形元件上該 12 M293527 專相反螺疑凹槽80a，b形成實質上水平且向外螺旋圖案的凹 槽80a，b ’其可改善加工殘渣對該元件表面22的吸附性。 於另一種實例中，該表面22可進一步包含一或多個環 形凹槽92，如第2C圖所示，以進一步中斷該表面22的連續 5段部。該等環形凹槽92 —般是與該元件1〇〇的中心軸同心且 環繞中心軸，例如該擋板120的中心軸94。該等環形凹槽92 可相互成同心，且軸向或徑向地間隔橫過該表面22。該等 環形凹槽92亦宜於沿該表面22之數點處橫過且與該等相反 螺旋凹槽80a，b交錯，以中斷任何連續線性或徑向表面段 10部。於其中一種實例，該等環形凹槽92可呈沿一圓柱形元 件100的表面22垂直間隔，例如沿該擋板12〇的軸向長度j。 於另一種實例中，該等環形凹槽92可呈沿一環形元件1〇〇的 表面22徑向間隔，例如沿一加工套件139的環形元件1〇〇的 半徑r。該等環形凹槽92之間的間距之選定是可提供最佳殘 15渣吸附性。舉例來說，一擋板120上相鄰環形凹槽92之間的 適當間距可為自約〇.25cm( 0.1英吋）至約丨3cm( 〇·5英吋）， 例如約0.6cm (0.25英吋）。 該π件100上的該等相反螺旋凹槽80a，b宜包含使該表 面22的深度高的足以改善加工殘渣對該元件1〇〇的吸附 2〇性。舉例來說，該表面22上該等相反螺旋凹槽80a,b的適當 深度可為至少約0_25mm，且不超過約丨5mm，例如自約 0.25mm至約L5mm。根據該元件1〇〇的材料成分，該等凹槽 80a’b的深度—般可大於以藉滾花之其他方式所形成之深 度於其中-種實例中’-第—螺旋凹槽8〇a的深度與該第 13 M293527 二螺旋凹槽80b的深度。儘管該等凹槽8〇a，b的深度宜為在該 表面22的至少一區域上是至少約〇.25mm，該等凹槽8〇a，b於 該表面22的另一區域上亦可為淺於〇 25nim。或者，該等凹 槽80a，b可實質上完全包含沿該等凹槽8〇a，b的全長至少約 5 〇.25mm的深度。該等第一及第二螺旋凹槽8〇a，b亦可包含不 同的間距於相鄰螺旋臂99a，b之間。 於其中一種實例中，該表面22包含第一及第二紋理特 徵98a，b，舉例來說例如該等相反螺旋凹槽8〇a，b，其形成一 第一紋理圖案95a於該表面22的第一紋理圖案區域96a上， 10及一第二紋理圖案95b於該表面22的第二紋理圖案區域96b 上，如第2C圖所示。舉例來說，該第一紋理圖案95a可包含 一或多個第一深度及於各螺旋凹槽8〇a，b的螺旋臂99a，b之 間的第一間距，其不同於該第二紋理圖案95b上對應的第二 深度及第二間距。該第一紋理圖案95a上該等螺旋臂99a，b 15 的密度亦可不同於該第二紋理圖案95b上者。於其中一種實 例中，該表面22包含相反螺旋凹槽8〇a，b，其深度是自該表 面22的第一區域96a上的一第一深度，至該表面22的第二區 域96b上的一第二深度作變化。該等螺旋凹槽8(^，13遍及該表 面22的深度變化可使該等凹槽可對於不同腔室位置上殘流 20的吸附性最佳化。舉例來說，遭受到高數量的加工沉積之 區域，例如接近該加工腔室106中加工地區之區域，該等螺 旋凹槽80a，b，可包含較大的深度，以容置較大數量的殘渣。 如另一實例中，未遭受到高殘渣沉積量的區域可包含較不 深，即較淺的凹槽80a，b，以容置較少量的沉積量。該等深A cross-sectional view of the embodiment of ="; and a cross-sectional side view of 苐8图疋%戍. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT As shown in FIG. 1, an embodiment of a substrate processing apparatus 104 including a substrate processing chamber 1 (10) is shown. There are several elements 100 for processing a substrate 1〇4 in a gas excitation portion. One or more of the illustrated chambers 106 can include an elemental structure having a surface 12 of a particular texture such that processing debris generated during processing of the substrate 104 can be adsorbed onto the surface 22 of the element to reduce the processing of the substrate. 104 is contaminated by processing residues. The surface 20 of the element 1 M293527 may comprise a η"away material such as titanium, stainless steel, copper, button, tungsten = at least. The textured surface 22 may also include a shouting material, such as Oxygen strontium nitrogen, nitrogen cut, oxygen cut, quartz, carbon cut, oxidized period, yttria and titanium reduction at least. Examples of materials that can be manufactured or cured to have this textured surface 22 include part number 0021-17718, 0020.00673,0200.0067^002!^^ 9,0021-17717 and 002Μ7720. In an example towel, the component 丨(10) comprises a surface 22 having a specific texture to reduce the average length of the continuous segment on the surface 22. And a number of 10 mesh suppression; k sheet or layer peeling of the processed deposit of the surface 22. The processed deposits generated on the excessively long continuous section 83 can be strongly adsorbed to each other, thereby being very long The residue strip form is peeled off from the element 1 so that the substrate processed in the chamber 1〇6 is contaminated. Conversely, surface segments separated by bumps or cracks have been studied, or 15 breaks in other surfaces, available on the surface The processing residue is more adsorptive and does not allow the crumb to easily flake off from the surface sheet or layer. In one example, an improved surface 22 has a reduced number of oversized continuous segments 83, It is formed by forming first and second spiral grooves 80a, b on the surface, as shown in Figures 2A and 2B. The spiral grooves 20 80a, b can be opposite each other. For example, The grooves 80a, b can be left-handed and right-handed grooves that travel in opposite directions and can include opposing threads formed on the surface. In a preferred embodiment, the opposing helical grooves 80a, b includes a right-handed spiral groove 80a that rotates clockwise about the surface 22, and a left-handed spiral groove 80b that rotates counterclockwise about the surface 22, as viewed from above. The M293527 and other spiral grooves 80a, b The non-groove portions 81 of the substantially continuous section 83 of the element surface 22 can be separated and shortened from each other and shortened. In one example, the surface 22 including the spiral grooves 80a, b is substantially Without a continuous section 83, the length or circumference of the grooves 8a, b is About 5 〇.lcm (〇.〇4 inches). For example, the average length or circumference of the continuous segments 83 may be less than about 〇.〇5cm (0.02 inches). In one example, The average length or circumference of the continuous segments 83 may range from more than a few centimeters to no more than about 0.1 cm (0.04 inch). In another example, the grooves are on the surface 22. The continuous section 83 between 8〇a, b may not exceed an area of about 10 〇.lcm2 (1600 square feet per thousand), for example, the area may be from about 0.001 cm2 (225 parts per thousand) Square miles) to approximately 01cm2 (1600 square feet per thousand). The opposite spiral grooves 8〇&mountain form a more discontinuous surface to improve the adsorption of the processing residue to the surface 22. 15 Figures 2A and 2B show the implementation of the element 1 with the opposite helical groove configuration. example. For example, Figure 2A is an embodiment showing a section of a cylindrical member 100 in which a cylindrical section of a chamber plate 120 is formed such that the opposing helical grooves 80a, b are formed in the element 1. On the inner surface of the cymbal. In this embodiment, the opposite helical grooves 80a, b extend perpendicularly across the surface 22 of the baffle 12A, and extend helically about a central axis 94 of the baffle 120 to form a helical groove. On at least a portion of the baffle surface 22. The central axis 94 of the baffle 12A generally coincides with the central axis of the processing chamber 106, as in the example shown in FIG. For example, a first spiral groove 80a may include a right finger direction, wherein the spiral groove 80a is a surface that increases the length of the spiral groove 80a/turn 11 M293527 (length/tum)' around the element 1 22 rotate clockwise. The second helical groove 80b can include a left-handed orientation, wherein the helical groove is also rotated counterclockwise about the surface 22 of the element by increasing the length/turn of the groove. In one example, the spiral grooves 80a, b begin at a starting point 82a, b toward one end of the 5 baffle 120, for example at the bottom 1〇3 of the baffle 120' and around the block The center of the plate 12 turns axially to terminate at a screw end point 84a, b located at an opposite end of the plate 120, such as the top 101 of the baffle 120. The appropriate angle of attachment of each of the grooves 80a, b relative to the central axis 94 can be, for example, at least about 45. For example, since about 45. To about 75. And 10 can be at least about 60. . The appropriate spacing between the helical arms 99a, b of each of the helical grooves 80a, b may be from about (X25 cm (0.1 inches) to about 1.3 cm (0.5 inches), for example about 0-6 cm (0-25 inches). 2B is another embodiment of display element 100 that is annular and has opposite helical grooves 80a, b formed on a top surface 34. The annular element 1 can include, for example, a component of a processing kit (9) For example, at least one of a retaining clip, a deposition ring 128, and a retaining clip 20. The opposite spiral grooves 8 are each increased to a spiral starting point 82a, b from a center 85 toward the element 100, to be oriented toward A spiral end point 8 at the circumference 87 of the element 100, such as the groove radius r of the mountain, rotates about the surface 22 of the element 100. In the illustration, the spiral recess 20 slots 80a, b are relative to the element 1 The central axis_heart, and the opposite helical grooves 80a, b are generally interdigitated and staggered at a number of points on the surface to interrupt the continuous surface segments. The helical arms 990 of each helical groove 8_ The appropriate spacing between, from about 2525cm (4) inches to about 13 咖 (〇·5 inches), for example about 0.6cm ( 0·25 miles). Thus, the 12 M293527 on the ring member specifically faces the groove 80a, b forming a substantially horizontal and outward spiral pattern of grooves 80a, b' which improves the adhesion of the processing residue to the element surface 22. In another example, the surface 22 can further include one or more annular grooves 92, as shown in Figure 2C, to further interrupt successive 5 segments of the surface 22. The annular grooves 92 are generally concentric with the central axis of the element 1〇〇 and surround the central axis, such as the central axis 94 of the baffle 120. The annular grooves 92 can be concentric with each other and axially or radially spaced across the surface 22. The annular grooves 92 are also preferably traversed at a number of points along the surface 22 and staggered with the opposing helical grooves 80a, b to interrupt any continuous linear or radial surface segments 10. In one example, the annular grooves 92 can be vertically spaced along the surface 22 of a cylindrical member 100, such as along the axial length j of the baffle 12〇. In another example, the annular grooves 92 can be radially spaced along the surface 22 of an annular member 1〇〇, such as along the radius r of the annular member 1〇〇 of a process kit 139. The spacing between the annular grooves 92 is selected to provide optimum residue adsorption. For example, a suitable spacing between adjacent annular grooves 92 on a baffle 120 can be from about 2525 cm (0.1 inch) to about cm3 cm (〇5 inches), for example about 0.6 cm (0.25). English). The opposite spiral grooves 80a, b on the π member 100 preferably include a surface having a high depth sufficient to improve the adsorption of the processing residue to the element 1 . For example, a suitable depth of the opposing helical grooves 80a, b on the surface 22 can be at least about 0-25 mm and no more than about mm5 mm, such as from about 0.25 mm to about L5 mm. Depending on the material composition of the element 1〇〇, the depth of the grooves 80a'b may generally be greater than the depth formed by other means of knurling in the example - '-------------- The depth is the depth of the second spiral groove 80b of the 13th M293527. Although the depth of the grooves 8〇a, b is preferably at least about 〇25 mm on at least one area of the surface 22, the grooves 8〇a, b may be on another area of the surface 22. It is shallower than 〇25nim. Alternatively, the grooves 80a, b may substantially completely comprise a depth along the entire length of the grooves 8a, b of at least about 5 〇.25 mm. The first and second spiral grooves 8a, b may also include different spacing between adjacent spiral arms 99a, b. In one example, the surface 22 includes first and second textured features 98a, b, such as, for example, the opposite helical grooves 8a, b forming a first textured pattern 95a on the surface 22. The first texture pattern area 96a, 10 and a second texture pattern 95b are on the second texture pattern area 96b of the surface 22, as shown in FIG. 2C. For example, the first texture pattern 95a may include one or more first depths and a first spacing between the spiral arms 99a, b of the respective spiral grooves 8〇a, b, which is different from the second texture. A corresponding second depth and a second pitch on the pattern 95b. The density of the spiral arms 99a, b 15 on the first texture pattern 95a may also be different from that on the second texture pattern 95b. In one example, the surface 22 includes opposing helical grooves 8a, b having a depth from a first depth on the first region 96a of the surface 22 to a second region 96b of the surface 22. A second depth changes. The varying depths of the spiral grooves 8 (the, 13 and the surface 22 can optimize the adsorptivity of the grooves for residual flow 20 at different chamber locations. For example, a high number of processing is experienced. The areas of deposition, such as areas close to the processing area in the processing chamber 106, may include a greater depth to accommodate a greater amount of debris. As another example, it does not suffer. The area to the high residue deposition amount may include less deep, that is, shallower grooves 80a, b to accommodate a smaller amount of deposition.

14 M293527 度亦可根據殘渣沉積的一般成分及構造形成於該腔室106 不同區域中以最佳化。該間距及深度亦可根據所使用的元 件型式及加工方式以最佳化。 遍及該元件100的表面22上，各相反螺旋凹槽8〇a，b中螺 5旋臂99a，b之間的間距s，及表面22的螺旋臂99a，b之數目亦 可變化’以提供於該元件1〇〇的不同紋理圖案區域96a，b上殘 渣的最佳吸附性。舉例來說，該等螺旋臂99a，b之間較靠近 的間距s ’及該等螺旋臂99a，b較高的密度，可提供於遭受到 大里殘產沉積篁之紋理圖案區域96a，b上，以藉較高密度的 10螺旋凹槽臂99a，b來容置更大量加工殘渣。螺旋臂99a，b之間 較寬的間距s及該等螺旋臂99a，b較低的密度可提供於一般 遭受到較少殘渣沉積量之紋理圖案區域96^1)上。形成於該 表面2 2内之環形凹槽9 2亦可根據所要殘渣吸附特性來變化 遍及該表面上的間距及深度。 15 一表面22上使第一及第二紋理圖案95a，b於一擋板120 的一段部上之實例是顯示於第2c圖。於此實施例中，各螺 旋凹槽80a，b中相鄰螺旋臂99a，b之間的間距於該表面22的 第一紋理圖案區域96a中較為靠近，其是位於朝向該擋板 120的中間部97，且緊鄰於該加工腔室1〇6的加工區。該表 20面22的第二紋理圖案區域96b，其位於朝向該擋板120的頂 部101 ’具有較低密度的螺旋臂99a，b使該等臂99a，b之間具 有較大間距，因為此相隔較遠的區域可能遭受較少量的加 工殘渣。位於朝向該擋板120的底部1〇3之一第三紋理圖案 區域96c同樣地可具有較大的間距於相鄰螺旋臂99a，b之 15 M293527 間。各相反螺旋凹槽80a，b的螺旋臂99a，b之深度亦可變化， 自朝向該擋板120的中間部97的較大深度，至朝向該擋板 120的頂部1〇1及底部1〇3的較淺深度。於另一實例中，一環 形元件1〇〇,例如一沉積環12，包含螺旋臂99a，b，其具有較 5大深度約在該環表面22的中間處，此處遭受最高程度的沉 積ϊ，以及較淺螺旋臂99a，b，其具有較小深度朝向該中心 85及該環形元件100的環周87，此處殘渣的沉積可能較輕 微。於一實例中，該環形元件100上的螺旋臂圖案一般可變 化，自約該表面22的中間之，，較粗略，，圖案，其具有相當深 10且均勻寬的臂99a，b，其之間具有相當大的間距，至朝向該 環形元件100的中心85及環周87之，，較細微，，圖案，其具有相 當淺且均勻薄的臂99a，b，其之間具有更為緊密的間距。 於一種實例中，於第一紋理圖案區域96a内該等螺旋臂 99a，b的深度至少為該第二紋理圖案區域96b内的深度約2 I5 倍’且該弟一紋理圖案區域96b内相鄰螺旋臂99a,b之間的一 第二間距至少為該第一紋理圖案區域96a内的間距約1.7 倍。舉例來說，各相反螺旋凹槽80a，b的螺旋臂99a，b之深度 可變化，自第一紋理圖案區域96a内第一較大深度至少約為 0.8mm( 0.02英对），例如自約〇.8mm(0.03英对）至約1.3mm 2〇 (0·〇5英吋），至第二紋理圖案區域96b内第二較小深度小 於約0.6mm (〇_〇25英吋），例如自約0.4mm (0.015英吋）至 約0.6mm ( 0.025英吋）。各相反螺旋凹槽80a，b内相鄰螺旋 臂99a，b之間的間距s可變化，自第一紋理圖案區域96a内第 一較小間距小於約1 ·5ηπη，例如自約1mm ( 0.04英对）至約 16 M293527 L5mm (〇.〇6英吋），至第二紋理圖案區域％b内第二較大間 距至少約為1.8mm(〇.〇7英吋），例如自約18111111(〇 〇7英吋） 至約2.8mm (〇·π英吋）。於一種實例中，一或多種深度及 間距可從該第一至第二值以實質上連續的方式變化，其在 該等值中實質上無中斷的變異。 10 15 20 包含該等相反螺旋凹槽80a，b之該表面22可以一適當方 法來形成，例如可於該表面22中切刻及/或碾壓該等相反螺 方疋凹槽80a，b之機械加工方法。舉例來說，該等相反螺旋凹 槽8〇a，b可藉由電腦數值控制（CNC)機械加工方法被切割於 該讀構造11的表面22内。於此法巾，將所要的凹 槽形狀及深度於一電腦控制器中程式化以控制一切割裝 置’例如-旋轉刀具’其在該表面22切割出該等凹槽8〇0。 該電控制器包括指令程式碼以導引該切割裝置將該元件 表面22切_定量及形狀來形朗要的凹獅a，b於其上。 另β種方絲形成所要凹槽形狀亦可使用對此技藝所熟知 之習用方法。亦可制其他f用之賴及切财法㈣成 所要的凹槽，且亦可❹其他制的金屬成形方法，例如 雷射切割及彎折方法。 一於其中-種實例中，—種CNc機械加工方法所使用之 刀具73 ’其包含—旋轉切割刀具73橫過該表面22， ”有可I成所要的凹槽8〇a，b之圖案，如第3圖 該旋轉切割刀具73宜包含一 之例不 ^ , 又角刀片，具有一相當小的直 例如自約㈤⑹英㈨至職m (4英时）的直 位且亦且包含一相當尖銳的交角α，例如自約Μ。至約9〇 17 M293527 的角度，甚至為少於約65。，例如約60。，以形成具有 所欲尺寸的凹槽。該旋轉切割刀具對於該表面的轉數及壓 力可被給定以提供所欲之凹槽形狀。該切割刀具73宜可包 含-控向圓形尖端75，以形成一圓形凹槽8〇a，b於該表面22 5上，且可降低該表面22的微破裂及斷裂發生率。因表面22 包含有陶兗材，該切割刀具73可包含一具有適當研磨料之 研磨輪，例如覆有鑽石之研磨工具。 _ 於另-種κ例中’該CNC機械加工方法所使用之一切 割刀具73，其包含-非旋轉切割刀緣橫過該表面22，以形 1〇成所欲凹槽形狀及尺寸。該非旋轉切割刀緣可橫過該表面 22預定次數，關定壓力抵於該表㈣上，直到已形成所 要形狀及尺寸之凹槽80a，b為止。該切割刀具73所包含的材 質是具有高硬度以可研磨及切割該元件表面22。舉例來 4 ’若it件具有金屬表面22，該切割刀具73可包含以碳化 I5鎢所製成的尖端75。若元件具有陶竟表面μ，該切割刀具 φ 73可包含鑽石及碳化狀至少-種。或者，該等凹槽80a，b 可在燒結預成形物之前被形成一軟性陶瓷預成形物，以降 低该陶曼材於凹槽成形期間破裂或斷裂之可能性。該Cnc 方法藉由可使所欲形狀及參數放入該CNC電腦程式中以容 20許最後凹槽形狀可受到較佳的控制，以致於該CNC電腦可 有效率地及自動地得到正確的機械加工參數且進行適當的 切割步驟來形成該等凹槽80a，b。 於一種實例中，該表面22在形成該等相反螺旋凹槽 80a，b之後進一步加工處理，以將該等凹槽的邊緣圓潤以自 18 M293527 該表面22去除尖銳的邊緣76，其可能包含邊緣、角隅及其 他尖銳轉角。尖銳邊緣76的去除是需要的，以降低自該元 件表面22累積的加工殘渣剝落或剝離。該等凹槽8〇a，b的尖 銳邊緣76會作用為應力集中體，會造成重疊殘渣沉積薄膜 5的破裂及碎裂，其最後會導致其上的殘渣沉積剝落且污染 該基材。於其中一種實例中，例如第4圖所示，該元件表面 22是實質上無尖銳邊緣76。該表面22可藉由例如該表面22 修的化學餘刻（chemical etching)、電化學磨版法 (electrochemical graining)或喷粒法(grit blasting)來處理以 10去除該等尖銳邊緣76。舉例來說，於化學蝕刻方法中，包 含有該等凹槽80a，b之該表面22可浸泡於化學蝕刻劑溶液 内，例如氫氟酸(HF)或硝酸(HN〇3)至少之一，以侵蝕該等 尖銳邊緣76及邊緣處。於電化學磨版法中，該表面22浸泡 於電化學磨版法溶液中，例如HC1溶液，且使電流通過此溶 I5液以電化學磨版法處理侵㈣表面22上的尖銳邊緣及邊緣 • 4。於喷粒法中，使用壓縮空氣將微粒驅散向該表面22以 去除尖銳邊緣76。適當的噴粒及電化學磨版法及參數之例 不可如Brueckber等人的U.S.專利申請號10/863，151所述，其 名稱為”紋理腔室表面，，，申請日為2004年6月7日，且共同 2〇讓渡予應用材料股份有限公司，且在此以其全部内容併入 本案做為參考資料。於其-種實例中，該等凹槽8心之間 連續段部83的面積是保持為充分的小以致於該等凹槽之間 的這些段部83可呈實質上圓潤以形成圓孤狀表面段於該等 凹槽80a，b之間。舉例來說，各連續段部咖面積可小於約 19 M293527 0.6mm (千分之100平方英吋）。亦可將這些方法以不同方 式合併使用，此為熟知技藝者所知。 該表面22亦可被加工處理以設有一或多粗糙區域％。 舉例來說，該表面22可被加工處理使該等相反螺旋凹槽 5 80a，b之間的表面22之連續段部83粗糙，以加強加工殘渣對 這些段部之吸附性。該等粗糙區域86的適意平均表面粗糙 度可為至約3.2½米（125微英忖），例如自約丨.6微米（63 微英对）至約12.5微米（500微英对）。該表面22可藉由例 如對表面之電化學磨版法及噴粒法至少一種方式粗糖化。 10其中-種方式中’該表面粗糖步驟是與尖銳邊緣76的去除 與圓'潤步驟分離進行。另一種方式中，該表面22的區域86 是在進行尖銳邊緣76圓潤化的步驟期間時粗糖化以得到所 要的表面粗糖度。 15 20 八有W相反螺旋凹槽8〇a，b的表面之元件⑽相較於 ==可提供許多優點。舉例來說’包含該等螺旋 凹槽80a，b的表面22相較於藉由喷粒或單獨電子束掃 ^ 的表面粗糖度。該等螺旋凹槽⑽的：圖 ^可包，週期凹槽圖案，使—沉積殘逢薄厲中的局部 力取小化以提供較佳的韻性。該#圓潤 =的其他邊緣亦有助於降低沉積殘㈣ :微 破裂以抑制薄膜的碎裂。並且，具有該等螺旋凹槽^1 面22相較於其他表面可更易於清潔，例如描一 電子束所形叙表面，此仙為該㈣放 可輕易的自其絲_。尤其是以電化學清潔法Γ真: 20 M293527 如Wang等人的U.S.專利號碼10/870,716所述，名稱為”含鈕 " 材質之電化學移除法，，，共同讓渡予應用材料股份有限公司 且申請日為2004年6月17日，在此以其全部内容併入本案做 為參考資料。並且，此方法的彈性是容許使該等螺旋凹槽 5 於該表面的不同區域中具有不同深度及不同密度而可最佳 化，甚至可對不同元件最佳化。此外，形成該等凹槽8加山 之機械切割法一定可應用於具有金屬表面22的元件100,以 ^ 及具有陶瓷表面22的元件。據此，具有該等相反螺旋凹槽 的方法及元件可在使基材的加工時元件的最佳化上提供許 10 多優點。 於另一種實例中，該元件1〇〇包含一基材固持夾2〇，其 具有一表面22具有紋理以降低加工殘渣對基材104的污 染’如第5A及5B圖所示。該基材固持夾2〇能將一基材1〇4 固定於一基材支撐件114的基材納置表面180上，且亦可降 15低加工殘渣沉積於該基材1〇4上。於所示例中，該基材固持 φ 夾20包含一環體24，其具有一環形外部26環繞該基材1〇4， 及一凸伸部30，其至少部分地延伸於該基材104的環周上。 該基材104的一頂面1〇5曝露穿過該環體24上一實質上呈圓 形開口 37。該環體24的環形外部26包含一内壁33，其直徑 要夠大，以可至少部分地環繞定位在該支撐件114上的基材 1〇4之圓周28，藉以可將該基材刚至少部分地固定於該支 撐件114上。該凸伸部30是自該環形外部仏向内延伸於可至 少部分地覆蓋該基材綱的環周39，且可延伸於該基材1〇4 的環周39上自約lmm至約心功，且甚至座置於該基材刚 21 M293527 的環周39上。該固持夾20的一頂面34面向該腔室106的一加 工區109，且延伸橫跨該凸伸部30及該固持夾20的環形外部 26兩者。該頂面34可實質上平行於該基材1〇4的頂面丨〇5。 該凸伸部30可保護該基材104的環周部免於加工殘渣沉積 於該基材104上，且亦可持住或，，夾持，，該基材1〇4以將該基 材104於加工期間緊固於該基材支撐件114的基材納置表面 180 〇 10 15 20 該固持環20可包含進一步的構造元件以將該固持環2〇 連接於該加工腔室106的一部位。舉例來說，如第5B圖所 示，該固持環20可包含一或多向下延伸壁33a，b。一第一向 下延伸壁33a可包含一具有弟一内徑31的第一環壁，其環繞 且相鄰於該基材104的外圓周28，以保護該基材1〇4的側 部。該凸伸部30可自該第-向下延伸壁33峨向向内延伸。 -第二向下延伸獅可包含一第二環壁，其同心地位於該 第-向下延伸壁咖外部’使該等第一與第二壁33^之間留 有-連接空間49。該連接空間49可容納該支標件叫的一部 分’以將該固持失20連接於該支撐件114，如第4圖所示。 該第二向下延伸壁33b亦可向下延伸—相當的距離以至少 可部分地錢功騎支料⑴的内部部件被侵餘。 據發現藉由形成-紋理表面22包含有滚花曝露表㈣ =固持夾的至少一部分上’可提供改善的加工結果。該 滾花曝露表面22可藉推壓一或多堅硬邊 人 的一主二士七/丄 還緣56於該固持夾20 面I ㈣成，例如藉由使該料硬邊緣滚壓於該表 上，错以於該表面上壓印或形成凸起的圖案特徵35。該 22 M293527 等圖案特徵35可包含於該滾花曝露表面22上的凹部及凸 部。於第5A及5B圖所示的例子中，該等特徵35包含數凸部 及凹部於該滾花曝露表面22上，其包含凸起脊部42以及凹 下溝部44或通道。該等凸起脊部42及凹下溝部料具有相對 5於一中心線46的幅度，該中心線46是表示該滾花曝露表面 22的中線南度，其可改善殘渣對該滾花曝露表面的吸附 性。該等脊部42及溝部44的幅度是由從該中心線或平均表 面高度的該脊部高度或溝部深度之最大背離所構成。於一 例示中，一或多個脊部42具有於該中心線46上方的幅度， 10是至少約〇.5mm且少於約2.5mm，例如自約imm至約 1.5mm。該等溝部44包含通道或溝渠於該滾花曝露表面22 内，其延伸於該中心線46底下，以於該滾花曝露表面22内 設有凹部。舉例來說，一或多個溝部可具有於該中心線弘 底下的幅度為至少約〇·5ηιπ1且少於約2.5mm，例如自約lmm 至約 1.5mm。 藉由該等圖案特徵35所設置的該等滾花脊部42及溝部 44之數目亦可被給定以提供殘渣最佳的吸附性。舉例來 2該固持夾20可包含有約個至}5〇個脊部及約削個 至約150個溝部44。具有該等脊部42及溝部44之該滾花曝露 20表面22可藉由設置的特徵塊聚集加工殘渣以降低基材污 染及將該基材104”釘黏，，於該支撐件114，以改善基材加工 成效。 該滾花曝露表面22可設置於該固持夾20可改善加工殘 /查及附F生的位上’例如於曝露該腔室1〇6内的激發氣體之 ⑧ 23 M293527 表面上其中貝例，該滾花曝露表面22包含該凸伸部3〇 的曝露表面之至少—部位。將該滾花曝露表面22設於該凸 伸部30上可降低可聚集於該基材納置區内的殘逢量，以降 低該基材104的污染及釘黏。舉例來說，該滾花曝露表面22 5可包含該凸伸部30的至少一部分，甚至為實質上整個頂面 34a，以降低殘渣向該基材1〇4之流動。該滾花曝露表面亦 可或者可取代地包含該外環部％的頂面34b之至少一部 分。其中一種實例，該滾花曝露表面22延伸橫過該固持夾 20實質上整個頂面34，如第5A及5B圖所示。 10 該滾花曝露表面22亦可包含該固持夾2〇的另一表面之 至少一部分，例如該夾20的外側面36之至少一部分。該外 側面36向下延伸過該第二外側壁3313上，且可實質上與該固 持夾20的頂面34垂直。於其中一種例示中，該固持夾2〇包 含一實貝上連續滾花曝露表面22，其延伸橫過該頂面34且 15向下延伸該外側表面36之至少一部位，如第5B圖所示。該 夾20的其他部分亦包含該滾花曝露表面22，例如該凸伸部 30之内側表面38。 於其中一例示，該滾花曝露表面22包含有脊部42及溝 部44，其相互以同心配置。舉例來說，該滾花曝露表面22 20 可包含有一徑向圖案之脊部42及溝部44於該頂面34之至少 一部分上，該頂面34圍繞該固持夾20的中心開口37，且甚 至可為實質上與該中心開口37同軸，如第5A圖所示。圍繞 該中心開口37之該等脊部42及溝部44因增加該固持夾2〇的 半徑而增加其圓周，以致於較近於該中心開口37之内部脊 M293527 部42a及溝部44a同心地套疊於朝向該固持夾20環周之外部 脊部42b及溝部44b内側。該等脊部42及溝部44宜呈實質上 圓形且可形成環部繞該表面22的中心開口 37。該等脊部42 及溝部44亦可包含有其他同心形狀，例如同心橢圓，或其 5 他橢圓形狀。該等脊部42及溝部44亦可沿該滾花曝露表面 22徑向交互設置，以提供數特徵35以可供加工殘渣吸附， 例如第5A圖所示。 包含有該滾花曝露表面22具有該等同心脊部42及溝部 44之該固持夾20相較其他表面上提供一優點，因該滾花曝 10露表面22特別適用於降低加工殘渣流向該基材104。舉例來 說，於高溫加工時，其可繞該腔室1〇6再循環及回流沉積 物，該等同心圖案之脊部及溝部44可降低加工殘渣流向該 基材104。該等同心溝部44作為陷阱或壕溝，以接住會再循 環向該基材104之加工殘渣，且該等同心脊部42作為擋壁， 15以阻擋殘渣流向該基材1 〇 4。該等圓形對稱脊部4 2及溝部4 4 藉由阻擔導向該基材104的殘渣之徑向流路而提供最佳的 抑制作用。 該等脊部42及溝部44可沿該滾花曝露表面22徑向間 隔，以提供該等脊部42與溝部44之間的適意距離。於一種 20實例中，該等脊部42及溝部44是週期性地相互間隔以提供 一規則間隔圖案特徵35。舉例來說，該等脊部42可包含峰 部41對應於各脊部42上最高點，且該等脊部42及溝部料可 週期性地相間隔以於相鄰脊部42之間提供峰對峰距離至少 約為0.5mm且少於約2.5mm，例如至少約lmm且少於約 25 M293527 1.5mm，使溝部44分離該等相鄰脊部42，如第5A及5B圖所 示。或者，相鄰脊部42之間的距離或週期可利用增加該固 持夾20的半徑來變化。 於製造該固持夾20包含有該滾花表面22之方法中，可 5形成具有所要形狀之固持夾20。該固持夾20的所要形狀可 藉一成形法來形成，例如電腦數值控制法（CNC)。於此法 中，藉使用一電腦控制切割裝置來提供所要形狀，其能對 應於從一電腦控制器所得的控制訊號來切割一金屬預成形 物。該電腦控制器包含有指令程式碼以導引該切割裝置切 10割該預成形物之部位以留下所欲夾形狀，例如一固持夹 20，其具有一環體，包含有一環部26，其有相當大的直徑 31，足以環繞一基材1〇4，及一凸伸部3〇，適以座設於該基 材104上。製造一具有適意形狀的固持夾20亦可使用其他方 法例如~1^法、模锻法他叩办叹㈣）、壓印法，及其他 驾用的方法。適用於製造該固持爽2〇之金屬例如可包含不 錄鋼、銘、鈦或銅至少其一種。於例示中，該固持夹是由 不鏽鋼所構成。 一旦具有所要主要形狀的固持夾20已形成時，可進行 滾花加工以形成該滾花曝露表面於該夾⑼至少一部位 上’例如於該凸伸部30上。一具有堅硬邊緣56之滾花工具 5〇可提供以於該央2〇上形n花特徵35，例如由帛6a&6B 圖所不。該滾花工具5〇的堅硬邊緣56是由堅硬材質形成， 且具有可將固持夾2〇的表面形成鋸齒之形狀 。其中一實 例β滾化工具5〇包含有_滾花頭部52，其具有堅硬邊緣 26 M293527 56於輪體54上，該等輪體54可移動橫過該固持夾獅一表 面上。該等堅硬邊緣56包含有數㈣，其當被拉引橫過該 表面22¥可推壓且凹人於該表面a内。該等齒％被推壓於 該表面叙區域可形成凹σ，騎應於該料部4心 絲面22内之脊部42對應於該等齒％之間的間隙6〇，例如 由第6Β圖所示。據此，該等齒別宜具有從一中心線53的幅 度，該中心、線53表減滾花輪心4的—表面巧之中線高14 M293527 degrees may also be optimized in different regions of the chamber 106 depending on the general composition and configuration of the residue deposition. The pitch and depth can also be optimized depending on the type of component used and the processing method. Throughout the surface 22 of the element 100, the spacing s between the spiral 5 arms 99a, b of the respective helical grooves 8a, b, and the number of spiral arms 99a, b of the surface 22 may also vary 'to provide The optimum adsorption of the residue on the different texture pattern regions 96a, b of the element 1〇〇. For example, the closer spacing s ' between the spiral arms 99a, b and the higher density of the spiral arms 99a, b can be provided on the textured pattern areas 96a, b that are subject to the deposition of the large residuals. To accommodate a larger amount of processing residue by the higher density 10 spiral groove arms 99a, b. The wider spacing s between the spiral arms 99a, b and the lower density of the spiral arms 99a, b can be provided on the textured pattern area 96^1 which is generally subject to less residue deposition. The annular groove 92 formed in the surface 2 2 can also vary in pitch and depth over the surface depending on the desired residue adsorption characteristics. An example of a first surface 22 having a first and second texture pattern 95a, b on a portion of a baffle 120 is shown in Figure 2c. In this embodiment, the spacing between adjacent spiral arms 99a, b in each of the helical grooves 80a, b is closer to the first textured pattern region 96a of the surface 22, which is located in the middle of the baffle 120. The portion 97 is adjacent to the processing zone of the processing chamber 1〇6. The second textured pattern region 96b of the face 22 of the watch 20 is located at a lower end of the bezel 120 having a lower density of helical arms 99a, b such that there is a greater spacing between the arms 99a, b because of this Areas that are further apart may suffer from a smaller amount of processing residue. The third textured pattern region 96c, located toward the bottom 1〇3 of the baffle 120, may likewise have a greater spacing between 15 M293527 of adjacent spiral arms 99a, b. The depth of the spiral arms 99a, b of the opposite helical grooves 80a, b can also vary, from a greater depth toward the intermediate portion 97 of the baffle 120, to the top 1〇1 and bottom 1 of the baffle 120. The shallow depth of 3. In another example, an annular element 1 , such as a deposition ring 12 , includes a helical arm 99a, b having a greater depth than about 5 in the middle of the ring surface 22, where it is subjected to the highest degree of deposition. And shallower helical arms 99a, b having a smaller depth toward the center 85 and the circumference 87 of the annular element 100 where the deposition of debris may be minor. In one example, the spiral arm pattern on the ring member 100 is generally variable, from about the middle of the surface 22, to a relatively coarse, pattern, having substantially deep and uniformly wide arms 99a, b, There is a considerable spacing between the center 85 and the circumference 87 of the annular element 100, a finer, pattern having relatively shallow and uniform arms 99a, b with a tighter fit therebetween. spacing. In one example, the depths of the spiral arms 99a, b in the first texture pattern region 96a are at least about 2 I5 times the depth in the second texture pattern region 96b and adjacent to the texture pattern region 96b. A second spacing between the spiral arms 99a, b is at least about 1.7 times the spacing within the first textured pattern region 96a. For example, the depth of the spiral arms 99a, b of the respective helical grooves 80a, b can vary, from a first greater depth in the first textured pattern region 96a of at least about 0.8 mm (0.02 inches), such as from about 88mm (0.03 inches) to about 1.3mm 2〇 (0·〇5 inches), to a second smaller depth in the second texture pattern area 96b of less than about 0.6 mm (〇_〇25 inches), for example From about 0.4mm (0.015 inch) to about 0.6mm (0.025 inch). The spacing s between adjacent spiral arms 99a,b in each of the opposite helical grooves 80a,b can vary, with the first smaller spacing from the first textured pattern region 96a being less than about 1.7 ηπη, for example, from about 1 mm (0.04 英) To) to about 16 M293527 L5mm (〇.〇6 inches), the second larger spacing to the second texture pattern area %b is at least about 1.8 mm (〇.〇7 inches), for example, from about 18111111 (〇) 〇7 inches) to about 2.8mm (〇·π inches). In one example, one or more depths and spacings may vary from the first to second values in a substantially continuous manner with substantially uninterrupted variation in the values. 10 15 20 The surface 22 comprising the opposite helical grooves 80a, b can be formed by a suitable method, for example, the oppositely curved square grooves 80a, b can be cut and/or laminated in the surface 22. Mechanical processing method. For example, the opposing helical grooves 8a, b can be cut into the surface 22 of the read configuration 11 by computer numerical control (CNC) machining. In this method, the desired groove shape and depth are programmed in a computer controller to control a cutting device 'e.g., a rotary cutter' which cuts the grooves 8〇0 at the surface 22. The electrical controller includes command code to direct the cutting device to cut the size of the surface 22 of the component 22 to define the ridges a, b. Alternatively, the β-type square wire may be formed into a desired groove shape by a conventional method well known in the art. It can also be used to make other desired grooves and cut into the desired grooves, and can also be used for other metal forming methods such as laser cutting and bending. In one of the examples, the tool 73' used in the CNc machining method includes a rotary cutter 73 that traverses the surface 22, "having a pattern of grooves 8a, b that can be desired. As shown in Fig. 3, the rotary cutting tool 73 preferably includes an example of a corner blade having a relatively small straight position such as from about (five) (6) inches (9) to m (4 inches) and also contains a considerable amount. A sharp angle of intersection α, for example from about Μ. to an angle of about 9〇17 M293527, even less than about 65., for example about 60., to form a groove of the desired size. The rotary cutting tool for the surface The number of revolutions and pressure may be given to provide the desired shape of the groove. The cutting tool 73 may preferably include a controllable rounded tip 75 to form a circular recess 8a, b on the surface 22 And the incidence of micro-cracking and fracture of the surface 22 can be reduced. Since the surface 22 comprises a ceramic slab, the cutting tool 73 can comprise a grinding wheel with a suitable abrasive, such as a diamond-coated abrasive tool. - a kind of cutting tool 73 used in the CNC machining method in the κ case, The non-rotating cutting blade edge traverses the surface 22 to form the desired groove shape and size. The non-rotating cutting blade edge can traverse the surface 22 a predetermined number of times, and the depressing pressure is applied to the table (4). Until the recesses 80a, b of the desired shape and size have been formed. The cutting tool 73 comprises a material having a high hardness to grind and cut the component surface 22. For example, if the IT member has a metal surface 22, The cutting tool 73 may comprise a tip end 75 made of carbonized I5 tungsten. If the element has a ceramic surface μ, the cutting tool φ 73 may comprise at least one type of diamond and carbonized. Alternatively, the grooves 80a, b may be A soft ceramic preform is formed prior to sintering the preform to reduce the likelihood of cracking or breaking of the ceramic material during the formation of the recess. The Cnc method allows the desired shape and parameters to be placed in the CNC computer program. The final groove shape can be better controlled so that the CNC computer can efficiently and automatically obtain the correct machining parameters and perform appropriate cutting steps to form the grooves 80a, b. In an example, the surface 22 is further processed after forming the opposite helical grooves 80a, b to round the edges of the grooves to remove sharp edges 76 from the surface 22 of 18 M293527, which may include edges, corners隅 and other sharp corners. Removal of the sharp edges 76 is required to reduce the flaking or peeling of the processing debris accumulated from the surface 22 of the component. The sharp edges 76 of the grooves 8 〇 a, b act as stress concentrates, This may cause cracking and chipping of the overlapping residue deposition film 5, which may eventually cause the residue deposit thereon to peel off and contaminate the substrate. In one example, for example, as shown in Fig. 4, the element surface 22 is substantially absent. Sharp edge 76. The surface 22 can be treated to remove the sharp edges 76 by chemical etching, electrochemical graining or grit blasting, for example, of the surface 22. For example, in a chemical etching method, the surface 22 including the grooves 80a, b may be immersed in a chemical etchant solution, such as at least one of hydrofluoric acid (HF) or nitric acid (HN〇3). To erode the sharp edges 76 and edges. In the electrochemical graining process, the surface 22 is immersed in an electrochemical graining solution, such as an HCl solution, and the current is passed through the solution I5 to electrochemically grind the sharp edges and edges of the infiltrated surface. • 4. In the granulation process, compressed air is used to dissipate particles toward the surface 22 to remove the sharp edges 76. Examples of suitable blasting and electrochemical sizing methods and parameters are not described in U.S. Patent Application Serial No. 10/863,151, the entire disclosure of which is incorporated herein by reference. On the 7th, and jointly transferred to Applied Materials Co., Ltd., and the entire contents thereof are incorporated herein by reference. In its example, the continuous segment 83 between the grooves 8 The area is kept sufficiently small that the segments 83 between the grooves can be substantially rounded to form a circular orphaned surface segment between the grooves 80a, b. For example, each successive The segment area can be less than about 19 M293527 0.6 mm (100 square feet per thousand). These methods can also be combined in different ways, as is known to those skilled in the art. The surface 22 can also be processed to provide One or more rough areas %. For example, the surface 22 can be machined to roughen the continuous section 83 of the surface 22 between the opposing spiral grooves 580a, b to enhance the processing of the residue to the sections Adsorption. Appropriate average surface roughness of the rough regions 86 The degree can be up to about 3.21⁄2 meters (125 micro-inch), for example from about 66 microns (63 micro-pairs) to about 12.5 microns (500 micro-pairs). The surface 22 can be electrochemicalized by, for example, surface The grinding method and the granulation method are at least one way of coarse saccharification. 10 In the method, the surface roughening step is performed separately from the removal of the sharp edge 76 and the rounding step. In another manner, the surface of the surface 22 86 is coarsely saccharified during the step of rounding the sharp edges 76 to obtain the desired surface roughness. 15 20 Eight elements having opposite W-shaped spiral grooves 8〇a, b (10) provide many compared to == Advantages. For example, the surface 22 containing the spiral grooves 80a, b is compared to the surface roughness of the surface by the blasting or the individual electron beam. The spiral grooves (10): The groove pattern minimizes the local force in the deposition residual to provide better rhyme. The other edges of the #roundness also help to reduce the deposition residue (4): micro-cracking to suppress film fragmentation Moreover, having the spiral groove ^1 face 22 is easier than other surfaces For cleaning, for example, to describe the surface of an electron beam, this fairy can be easily placed from the wire. In particular, it is electrochemically cleaned: 20 M293527 US Patent No. 10/870,716, for example, Wang et al. The name is "with button" and the electrochemical removal method of the material, and is jointly transferred to Applied Materials Co., Ltd. and the application date is June 17, 2004, where the entire content is incorporated into the case. For reference. Moreover, the flexibility of this method allows for optimization of the spiral grooves 5 with different depths and densities in different regions of the surface, and may even optimize for different components. Moreover, the mechanical cutting method of forming the grooves 8 plus the mountain must be applied to the element 100 having the metal surface 22, and the element having the ceramic surface 22. Accordingly, the methods and elements having the opposite helical grooves provide a number of advantages in optimizing the components of the substrate during processing. In another example, the component 1A includes a substrate holding clip 2 having a surface 22 textured to reduce contamination of the substrate 104 by processing residues, as shown in Figures 5A and 5B. The substrate holding clip 2 can fix a substrate 1〇4 on the substrate receiving surface 180 of a substrate supporting member 114, and can also deposit a low processing residue on the substrate 1〇4. In the illustrated example, the substrate holding φ clip 20 includes a ring body 24 having an annular outer portion 26 surrounding the substrate 1〇4, and a projection 30 extending at least partially over the ring of the substrate 104. Weekly. A top surface 1〇5 of the substrate 104 is exposed through a substantially circular opening 37 in the ring body 24. The annular outer portion 26 of the ring body 24 includes an inner wall 33 that is sufficiently large in diameter to at least partially surround the circumference 28 of the substrate 1〇4 positioned on the support member 114, thereby allowing the substrate to be at least Partially fixed to the support member 114. The protrusion 30 extends inwardly from the annular outer ridge to a circumference 39 that can at least partially cover the substrate, and can extend from about 1 mm to about the heart circumference on the circumference 39 of the substrate 1〇4. And even placed on the circumference 39 of the substrate just 21 M293527. A top surface 34 of the retaining clip 20 faces a working area 109 of the chamber 106 and extends across both the raised portion 30 and the annular outer portion 26 of the retaining clip 20. The top surface 34 can be substantially parallel to the top surface 丨〇5 of the substrate 1〇4. The protruding portion 30 can protect the circumferential portion of the substrate 104 from processing residue deposited on the substrate 104, and can also hold or hold, the substrate 1〇4 to the substrate The substrate receiving surface 180 fastened to the substrate support 114 during processing 180 〇 10 15 20 The holding ring 20 may include further structural elements to connect the holding ring 2 to one of the processing chambers 106 Part. For example, as shown in Figure 5B, the retaining ring 20 can include one or more downwardly extending walls 33a, b. A first downwardly extending wall 33a can include a first annular wall having an inner diameter 31 that surrounds and is adjacent to the outer circumference 28 of the substrate 104 to protect the sides of the substrate 1〇4. The projection 30 can extend inwardly from the first downwardly extending wall 33. The second downwardly extending lion may comprise a second annular wall concentrically located outside the first downwardly extending wall to leave a connecting space 49 between the first and second walls 33^. The connection space 49 can accommodate a portion of the support member to connect the retention loss 20 to the support member 114, as shown in FIG. The second downwardly extending wall 33b can also extend downwardly - a substantial distance to at least partially trap the internal components of the ride (1). It has been found that improved results can be provided by forming a textured surface 22 comprising a knurled exposure meter (4) = at least a portion of the retaining clip. The knurled exposed surface 22 can be formed by pressing one or more hard-edged ones of the main two-seven 丄 丄 56 56 on the surface of the holding clip 20, for example, by rolling the hard edge of the material onto the watch. Upper, wrong to imprint or form raised pattern features 35 on the surface. The 22 M293527 and other pattern features 35 can include recesses and protrusions on the knurled exposed surface 22. In the example illustrated in Figures 5A and 5B, the features 35 include a plurality of projections and recesses on the knurled exposed surface 22 that include raised ridges 42 and recessed grooves 44 or channels. The raised ridges 42 and the recessed groove portions have a width relative to a centerline 46 which is a midline south of the knurled exposed surface 22 which improves residue exposure to the knurl. Adsorption of the surface. The amplitudes of the ridges 42 and the grooves 44 are formed by the maximum deviation of the ridge height or the groove depth from the centerline or average surface height. In one illustration, the one or more ridges 42 have an amplitude above the centerline 46, 10 being at least about 〇5 mm and less than about 2.5 mm, such as from about imm to about 1.5 mm. The grooves 44 include passages or channels in the knurled exposed surface 22 that extend underneath the centerline 46 to provide recesses in the knurled exposed surface 22. For example, one or more of the grooves may have an extent below the centerline of at least about 5·5ηιπ1 and less than about 2.5 mm, such as from about 1 mm to about 1.5 mm. The number of knurled ridges 42 and grooves 44 provided by the pattern features 35 can also be given to provide optimum adsorption of the residue. For example, the retaining clip 20 can include from about 5 to about 5 ridges and from about to about 150 grooves 44. The knurled exposure 20 surface 22 having the ridge portions 42 and the groove portions 44 can be used to gather the processing residue by the provided feature blocks to reduce the substrate contamination and nail the substrate 104" to the support member 114. Improving the substrate processing effect. The knurled exposed surface 22 can be disposed on the holding clip 20 to improve the processing residue/inspection and the F-initiated position, for example, 8 23 M293527 for exposing the excitation gas in the chamber 1〇6. The knurled exposed surface 22 includes at least a portion of the exposed surface of the protrusion 3〇. The knurled exposed surface 22 is disposed on the protrusion 30 to reduce aggregation on the substrate. The amount of residue in the nano-region is reduced to reduce contamination and nail adhesion of the substrate 104. For example, the knurled exposed surface 22 5 can include at least a portion of the projection 30, even substantially the entire top surface. 34a, to reduce the flow of residue to the substrate 1. The knurled exposed surface may or alternatively comprise at least a portion of the top surface 34b of the outer ring portion. In one example, the knurled exposed surface 22 Extending across the retaining clip 20 substantially the entire top surface 34, such as 5A And Figure 5B shows that the knurled exposed surface 22 can also include at least a portion of the other surface of the retaining clip 2, such as at least a portion of the outer side 36 of the clip 20. The outer side 36 extends downwardly through the The second outer side wall 3313 is substantially perpendicular to the top surface 34 of the retaining clip 20. In one of the illustrations, the retaining clip 2 includes a continuous knurled exposed surface 22 on the scallop that extends across the The top surface 34 and 15 extend downwardly at least a portion of the outer side surface 36, as shown in Fig. 5B. Other portions of the clip 20 also include the knurled exposed surface 22, such as the inner side surface 38 of the projection 30. For example, the knurled exposed surface 22 includes a ridge 42 and a groove 44 that are concentrically disposed with each other. For example, the knurled exposed surface 22 20 can include a radial pattern of ridges 42 and grooves 44 On at least a portion of the top surface 34, the top surface 34 surrounds the central opening 37 of the retaining clip 20 and may even be substantially coaxial with the central opening 37, as shown in FIG. 5A. Around the central opening 37 The ridges 42 and the grooves 44 are increased by the holding clip 2〇 The radius is increased by the circumference such that the inner ridge M293527 portion 42a and the groove portion 44a closer to the central opening 37 are concentrically nested inside the outer ridge portion 42b and the groove portion 44b toward the circumference of the holding clip 20. 42 and the groove portion 44 are preferably substantially circular and may form a central opening 37 around the surface 22 of the ring portion. The ridge portions 42 and the groove portion 44 may also include other concentric shapes, such as concentric ellipses, or 5 elliptical shapes thereof. The ridges 42 and grooves 44 may also be radially disposed along the knurled exposed surface 22 to provide a plurality of features 35 for processing residue adsorption, such as shown in FIG. 5A. The retaining clip 20 comprising the knurled exposed surface 22 having the equivalent core portion 42 and the groove portion 44 provides an advantage over other surfaces because the knurled exposed surface 22 is particularly suitable for reducing the flow of processing debris to the substrate. Material 104. For example, during high temperature processing, the material can be recycled and recirculated around the chamber 1 〇 6 , and the ridges and grooves 44 of the equivalent pattern can reduce the processing residue to the substrate 104 . The equivalent core groove portion 44 serves as a trap or a groove for catching the processing residue which is recirculated to the substrate 104, and the equivalent core portion 42 serves as a barrier wall 15 for blocking the flow of the residue to the substrate 1?. The circularly symmetrical ridges 4 2 and the grooves 4 4 provide an optimum suppression by blocking the radial flow path leading to the residue of the substrate 104. The ridges 42 and grooves 44 are radially spaced along the knurled exposed surface 22 to provide a suitable distance between the ridges 42 and the grooves 44. In one example of 20, the ridges 42 and the grooves 44 are periodically spaced apart from each other to provide a regular spaced pattern feature 35. For example, the ridges 42 can include peaks 41 corresponding to the highest points on the ridges 42, and the ridges 42 and the trenches can be periodically spaced to provide a peak between adjacent ridges 42. The peak distance is at least about 0.5 mm and less than about 2.5 mm, such as at least about 1 mm and less than about 25 M293527 1.5 mm, such that the groove portion 44 separates the adjacent ridges 42 as shown in Figures 5A and 5B. Alternatively, the distance or period between adjacent ridges 42 can be varied by increasing the radius of the retaining clip 20. In the method of manufacturing the retaining clip 20 that includes the knurled surface 22, the retaining clip 20 having the desired shape can be formed. The desired shape of the retaining clip 20 can be formed by a forming process such as computer numerical control (CNC). In this method, a computer controlled cutting device is used to provide the desired shape which is capable of cutting a metal preform corresponding to a control signal obtained from a computer controller. The computer controller includes a command code to guide the cutting device to cut the portion of the preform to leave a desired shape, such as a retaining clip 20 having a ring body including a ring portion 26 There is a relatively large diameter 31 sufficient to surround a substrate 1〇4, and a projection 3〇 suitable for seating on the substrate 104. The manufacture of a retaining clip 20 having a suitable shape may also use other methods such as ~1^ method, die forging (4), imprinting, and other methods of driving. Metals suitable for use in the manufacture of such a sturdy metal may, for example, comprise at least one of no steel, imprint, titanium or copper. In the illustration, the retaining clip is constructed of stainless steel. Once the retaining clip 20 having the desired primary shape has been formed, knurling can be performed to form the knurled exposed surface on at least a portion of the clip (9), e.g., on the projection 30. A knurling tool 5 having a hard edge 56 can provide an upper n-shaped feature 35 for the central ridge, for example, by 帛6a&6B. The hard edge 56 of the knurling tool 5 is formed of a hard material and has a shape in which the surface of the holding clip 2 is sawtoothed. One example of the beta roll tool 5A includes a knurled head 52 having a hard edge 26 M293527 56 on a wheel body 54 that is movable across a surface of the retaining lion. The hard edges 56 comprise a number (four) which, when pulled across the surface 22, can be pushed and recessed into the surface a. The teeth % are pressed against the surface region to form a concave σ, and the ridge portion 42 that is placed in the core surface 22 of the material portion 4 corresponds to a gap 6 之间 between the teeth %, for example, by the sixth Β The figure shows. Accordingly, the teeth should preferably have a width from a centerline 53 which is reduced in line-to-surface height of the knurling wheel center 4.

10 1510 15

度，該度需夠大，足以形成具有所要幅度之脊部42及溝 部44，且該㈣58亦具有於叙_距離，其可適以提供 該等脊部42之間所制峰料轉。料㈣適意幅度可 為自約0.5mm至約2.5mm，例如自約lmm至約i 5麵，且適 意的峰對峰距離可為自約〇.5_至約2 5mm，例如自約lmm 至、，、勺1.5mm。於該滾花加工之其中一實施例該固持夾2〇 口定於支援裝置，例如一車床（未圖示），而該滚花頭部 Μ是移動橫過該麟表面。或者，制持⑽的表面可被 移動於該,袞化頭52上，而該;袞花卫具5()仍保持以形成該滾 花曝露表面22。 該滾花頭部52上該等齒58之構形是選定以可提供所要 的圖案特徵35。舉例來說’於第认圖所示之例中，該滾花 扣頭452包含有齒58，其垂直於該等輪體54的移動方向。該 滾花頭部52亦可包含㈣部58，其是平行於該輪體的移 動1等㈣54被以可使料齒顺壓印之方向拉引橫過 該夾2〇的表面22，以形成所要圖案的同心脊部42及溝部 +例來說，一具有適當構形的齒58之滾花頭部52可以 27 M293527 該表面22上呈實質圓形的路徑被拉引橫過該表面22，以設 置該等同心的脊部42及溝部44。並且，第二圖案特徵35可 壓印於該第一圖案特徵35以製成所要的表面構形。舉例來 說，一”鑽石”圖案化滾花表面22可藉形成一第二圖案所設 5置而成’該第二圖案包含有脊部及溝部，其與第一圖案的 溝部及脊部偏離。然而，一滾花表面22，其具有主要由同 心脊部及溝部所構成之單一圖案，可合意的提供對加工殘 渣流向該基材104最佳的擋止。 具有该滾化表面22之該固持夾2〇對高溫加工特別有助 10益，例如鋁回流加工，其用以形成一層鋁於一基材104上。 銘回流加工的例子詳述於Yu等人的u s專利號碼 6,660，135，發證於2003年12月9日且共同讓渡予應用材料股 份有限公司，在此以其全部内容併入本案做為參考資料。 為形成一均勻鋁層於一基材上，一或多初始鋁層可藉由物 15理氣相沉積法沉積於一基材1〇4上，其中將激發噴射氣體提 供於一腔室内，以自一靶材處喷射鋁材於一基材1〇4上。然 後將具一或多鋁層之該基材104經過一鋁回流加工以形成 更均勻的鋁層。於此鋁回流加工時，具該鋁層之該基材1〇4 倍加熱至充分高的溫度，以使鋁回流及重新分配於該基材 20 ι〇4的表面105上。此回流加工一般可提供更均勻的鋁層， 因此加工可充填該基材104的表面1〇5内之通道或裂縫。一 般的回流加工可包含將該基材1〇4加熱至溫度至少約25〇 °C，例如自約250。〇至約500。(：。具有該滾花表面22之改良 的固持夾20可抑制加工殘渣流向該基材1〇4，且亦可聚集鬆 28 M293527 散的殘產以抑制該基材1G4上或環繞該基材納置區上之加 工殘潰沉積。 具有該滾花表面22之改良的固持夾2〇相較於無滾花表 面之口持夾20可提供更為改善的效果。舉例來說，該改 5良的固持夾20可容許在清潔或替換該固持夾20之前，需要 夕於至父約3〇%之rf瓦時之腔室加工。因此，具有該滾花 表面22之該改良固持夾20在該固持夾20失效之前，相較於 無滾花表面22之固持夾20,可容許實質上更多的基材1〇4進 行回流加工，藉以相較於無滾花表面22之固持夾2〇，可提 10 供實質上更加改良之加工性能。 在加工數基材104之後，該固持夾20的表面22可被清 潔而去除任何加工殘渣，例如含鋁殘渣。其中一種實例， 含鋁殘渣可藉將該夾20的表面22曝置於一清潔溶液中以可 溶解或其他方式將殘渣自該表面22去除。舉例來說，該表 15 面22可浸泡於清潔溶液中，或者可將清潔溶液擦拭或喷灑 於該表面22上。清潔溶液可包含有酸性溶液，例如fj3p〇4、 硝酸(HNO3)及氫氟酸(HF)至少其中一種。亦可單獨使用或 與酸性溶液依序使用的其他溶液，例如由氫氧化鉀(KOH) 所構成之鹼性溶液，及可選擇地使用由H202所構成的溶液。 20 清潔加工其中一種實例中，令一由不鏽鋼構成的固持 夾20被清潔去除含鋁殘渣的方式是藉由將該夾20的表面22 浸泡於由約lkg的氫氧化鉀(KOH)於約6公升去離子水中所 構成的起始鹼性清潔溶液。另一種實例中，該表面22被浸 泡於起始酸性清潔溶液中，此溶液是由20體積份的1^〇4、The degree is large enough to form the ridge 42 and the groove 44 having the desired amplitude, and the (C) 58 also has a distance which is adapted to provide a peak turn between the ridges 42. The material (4) may have a suitable amplitude of from about 0.5 mm to about 2.5 mm, for example from about 1 mm to about i5, and a suitable peak-to-peak distance may be from about 55. to about 25 mm, for example from about 1 mm to ,,, spoon 1.5mm. In one embodiment of the knurling process, the retaining clip 2 is positioned in a support device, such as a lathe (not shown), and the knurled head 移动 is moved across the lining surface. Alternatively, the surface of the holding (10) can be moved over the deuterated head 52, and the stencil 5 () remains retained to form the knurled exposed surface 22. The configuration of the teeth 58 on the knurled head 52 is selected to provide the desired pattern features 35. For example, in the example shown in the drawings, the knurled buckle 452 includes teeth 58 that are perpendicular to the direction of movement of the wheel bodies 54. The knurled head 52 can also include a (four) portion 58 that is parallel to the movement of the wheel body. The four (four) 54 are drawn across the surface 22 of the clip 2 in a direction in which the teeth are embossed to form a surface. Concentric ridges 42 and grooves of the desired pattern. For example, a knurled head 52 having a suitably configured tooth 58 can be pulled across the surface 22 in a substantially circular path on the surface 22, The ridge portion 42 and the groove portion 44 of the equivalent are provided. Also, a second pattern feature 35 can be embossed to the first pattern feature 35 to create a desired surface configuration. For example, a "diamond" patterned knurling surface 22 can be formed by forming a second pattern 5. The second pattern includes ridges and grooves that are offset from the grooves and ridges of the first pattern. . However, a knurled surface 22 having a single pattern consisting essentially of concentric ridges and grooves preferably desirably provides optimum stopping of the processing residue flow to the substrate 104. The retaining clip 2 having the rolled surface 22 is particularly useful for high temperature processing, such as aluminum reflow processing, which is used to form a layer of aluminum on a substrate 104. The example of Ming reflow processing is detailed in Yu et al.'s patent number 6,660,135, issued on December 9, 2003 and jointly transferred to Applied Materials Co., Ltd., hereby incorporated in its entirety as Reference materials. In order to form a uniform aluminum layer on a substrate, one or more initial aluminum layers may be deposited on a substrate 1 〇4 by vapor deposition of the material 15 , wherein the excitation gas is supplied to a chamber, A target is sprayed with aluminum on a substrate 1〇4. The substrate 104 having one or more aluminum layers is then subjected to an aluminum reflow process to form a more uniform aluminum layer. During the aluminum reflow process, the substrate having the aluminum layer is heated to a sufficiently high temperature 1 to 4 times to reflow and redistribute the aluminum onto the surface 105 of the substrate 20 〇4. This reflow process generally provides a more uniform layer of aluminum and is therefore processed to fill the channels or cracks in the surface 1〇5 of the substrate 104. A general reflow process can include heating the substrate 1 to 4 to a temperature of at least about 25 ° C, for example, from about 250. 〇 to about 500. (: The improved retaining clip 20 having the knurled surface 22 inhibits the processing residue from flowing to the substrate 1〇4, and may also accumulate the residual product of the loose 28 M293527 to inhibit or surround the substrate 1G4. Processed deposits on the nano-regions. The improved retaining clips 2 having the knurled surface 22 provide a more improved effect than the gussets 20 without the knurled surface. For example, the change 5 The good retaining clip 20 can permit chamber processing of about 3% of the rf watts to the parent before cleaning or replacing the retaining clip 20. Thus, the modified retaining clip 20 having the knurled surface 22 is Prior to failure of the retaining clip 20, substantially more substrate 1〇4 can be reflowed compared to the retaining clip 20 without the knurled surface 22, whereby the retaining clip 2 is compared to the non-knurled surface 22 The substantially improved processing performance can be provided. After processing the number of substrates 104, the surface 22 of the retaining clip 20 can be cleaned to remove any processing residues, such as aluminum-containing residues. One example, an aluminum-containing residue can be used. Exposing the surface 22 of the clip 20 to a cleaning solution to be soluble Or otherwise removing the residue from the surface 22. For example, the surface 22 of the watch 15 can be immersed in the cleaning solution, or the cleaning solution can be wiped or sprayed onto the surface 22. The cleaning solution can comprise an acidic solution, For example, at least one of fj3p〇4, nitric acid (HNO3), and hydrofluoric acid (HF). Other solutions that can be used alone or in combination with an acidic solution, such as an alkaline solution composed of potassium hydroxide (KOH), And optionally a solution consisting of H202. 20 Cleaning Process In one example, a retaining clip 20 made of stainless steel is cleaned to remove the aluminum-containing residue by immersing the surface 22 of the clip 20 in An initial alkaline cleaning solution of about lkg of potassium hydroxide (KOH) in about 6 liters of deionized water. In another example, the surface 22 is immersed in an initial acidic cleaning solution which is comprised of 20 volumes. 1^〇4,

29 M293527 5體積份的硝酸(HN〇3)及1體積份的去離子水所構成，經過 加熱到約60°C至約70°C的溫度。再一種實例中，該表面22 被浸泡於起始清潔溶液中，此溶液是1重量份的氫氧化鉀 (KOH)、10重量份的H202及20重量份的去離子水所構成。 5 這些起始清潔溶液的任何一種實行之後，可藉使該表面22 浸泡於一或多種後續的清潔溶液，例如一酸性清潔溶液， 其由20%體積的硝酸(HN〇3)、3%體積的氫氟酸(HF)及其餘 體積的去離子水所構成，接著是由50%體積的硝酸(HN〇3) 及50%體積的去離子水所構成之酸性溶液。該等清潔加工 10 能實質上不會侵蝕該固持夾20而去除含鋁殘渣。一種清潔 方法的例示詳細說明於Wang等人之U.S.專利申請號碼 10/304,535，名稱為”塗層加工腔室元件之清潔方法”[提申 曰期：2002年11月25日，公告日期：2004年5月27日，U.S· 申請公告號碼2004/0099285，共同讓渡給應用材料股份有 15 限公司，且在此以其全部内容併入本案做為參考資料。 另一種實例中，一或多腔室元件100，例如該固持夾 20，可包含具有一表面22的元件構造11，該表面22具有數 表面紋理，其可改善加工殘渣對該元件100的表面22之吸附 性。舉例來說，該表面22可包含第一及第二表面紋理圖案 20 62a，b，其共同可固持加工殘渣於該表面22上且抑制加工殘 渣的污染。具有第一及第二表面紋理圖案62a，b的元件1〇〇 之例子可如第7圖所示。於此實例中，該第一表面紋理圖案 62a包含有數同心凹槽64，其徑向相間隔橫過該元件1〇〇的 表面22上。該第二表面效理圖案62b包含有數紋理凹部66，29 M293527 5 parts by volume of nitric acid (HN〇3) and 1 part by volume of deionized water, heated to a temperature of from about 60 ° C to about 70 ° C. In still another example, the surface 22 is immersed in an initial cleaning solution consisting of 1 part by weight of potassium hydroxide (KOH), 10 parts by weight of H202, and 20 parts by weight of deionized water. 5 After any of these initial cleaning solutions are carried out, the surface 22 may be immersed in one or more subsequent cleaning solutions, such as an acidic cleaning solution consisting of 20% by volume nitric acid (HN〇3), 3% by volume. Hydrofluoric acid (HF) and the remaining volume of deionized water are followed by an acidic solution consisting of 50% by volume of nitric acid (HN〇3) and 50% by volume of deionized water. These cleaning processes 10 can substantially eliminate the retaining clip 20 and remove the aluminum-containing residue. An exemplary embodiment of a cleaning method is described in detail in US Patent Application Serial No. 10/304,535, issued toWang et al., entitled "Cleaning Method for Coating Processing Chamber Components" [Referral Period: November 25, 2002, Announcement Date: 2004 On May 27th, US. Application No. 2004/0099285, the company was transferred to the Applied Materials Co., Ltd., and the entire content was incorporated into the case as a reference. In another example, one or more of the chamber elements 100, such as the retaining clips 20, can include an element configuration 11 having a surface 22 having a number of surface textures that can improve processing debris to the surface 22 of the element 100. Adsorption. For example, the surface 22 can include first and second surface texture patterns 20 62a, b that collectively retain processing debris on the surface 22 and inhibit contamination of the processing residue. An example of the element 1 具有 having the first and second surface texture patterns 62a, b can be as shown in Fig. 7. In this example, the first surface texture pattern 62a includes a plurality of concentric grooves 64 that are radially spaced across the surface 22 of the element 1〇〇. The second surface effect pattern 62b includes a plurality of textured recesses 66.

30 M293527 例如以電子束紋理加工所形成之凹部或孔，其是形成於該 表面22上相鄰凹槽64之間。 於所示實例中，該紋理表面22容許加工殘渣聚集於該 表面22上的該等電子束级理凹部66内，以降低加工基材1〇4 5的污染。該紋理表面22進一步藉於該表面22上形成該等同 心凹槽64來強化，其最好是徑向相間隔橫過該表面22上， 以致於數凹部66可定位於相鄰同心凹槽64之間。該等同心 凹槽64提供可聚集加工殘渣的地區，且使殘渣可，，跑入 (run-down)’’該等凹槽64内以供收集。並且，該等同心凹槽 10 64增加該元件表面22的表面積，使更多及更寬的紋理特徵 35形成於該表面22上，如此可降低一沉積薄膜，，架橋，，於該 表面22中的孔或凹部上。愈大的紋理表面22之表面積亦可 增加可吸附殘渣的面積。藉此，包含有該等同心凹槽64及 電子束紋理凹部66的該表面22可提供基材1〇4的加工期間 15 更佳的性能，且在需要清潔該元件1〇〇之前，使更大量的殘 渣聚集於該元件表面22上。 其中一種實例中，該紋理表面22包含有同心凹槽64， 其形成相當深以加強加工殘渣的聚集及固持。舉例來說， 該等凹槽64可較一般以滾花加工所形成者更深，且可具有 20 至少約3mm的深度d，例如自約3mm至約8mm，且其中一種 是約為5mm，其是從該凹槽64的最底點至凹槽64之間一表 面區域70的最高點所測量者。該等同心凹槽64宜具有環 形，例如圓形’或甚至為橢圓形。該等凹槽64是環繞該元 件100的中心軸呈同心，其亦可為該加工腔室106的中心軸。 31 M293527 該等凹槽64的間距的給定是可提供其間最佳數目及間 距之凹部66。舉例來說，該等凹槽64可具有相鄰凹槽料之 間的徑向間距r，其被給定為相鄰凹部66之間的寬度w之至 少2倍，甚至至少約為相鄰凹槽66之間的寬度〜之3倍。舉例 5來說，該等相鄰凹槽64的徑向間距r可為至少約5mm，例如 自約5mm至約7mm，平均可為6mm，而相鄰凹槽66之間的 寬度w可為小於約3mm，例如自約imm至約3mm，平均可為 約2mm。該等同心凹槽64亦可形成於該表面22上，以致於 該專凹槽64之間的表面區域7〇具有實質上凹陷表面外廓， 10如第7圖所示。該等表面區域70的凹陷表面外廓逐漸尖錐於 該等凹槽64内以提供加工殘渣的下滑，，流動，，路徑於該等凹 槽64内。 形成該等同心凹槽64的適當方法包括機械加工方法， 例如利用切割及/或碾壓工具。舉例來說，該等同心凹槽64 15可藉由一電腦數值控制（CNC)機械加工方法被切割於該元 件構造11的表面22内。於此CNC方法中，將所要的凹槽形 狀及深度於一電腦控制器中程式化以控制一切割裝置，例 如一旋轉刀具，其在該表面22切割出該等凹槽64。該電腦 控制器包括程式碼以導引該切割裝置將該元件表面22切開 20 預定量來形成所要的凹槽64。形成所要凹槽形狀的其他方 法亦可使用對此技藝所熟知之習用方法。使用來形成該等 同心凹槽64的機械加工方法最好亦能形成該等凹槽64之間 的凹陷表面區域70。舉例來說，切割工具可包含一或多角 度切割刀具，其可形成漸次傾斜凹槽側壁72。其他習用之30 M293527 is a recess or hole formed, for example, by electron beam texturing, which is formed between adjacent grooves 64 on the surface 22. In the illustrated example, the textured surface 22 allows processing debris to collect within the electron beam leveling recesses 66 on the surface 22 to reduce contamination of the processed substrate 1〇45. The textured surface 22 is further reinforced by the formation of the equivalent center groove 64 on the surface 22, preferably radially spaced across the surface 22 such that the plurality of recesses 66 can be positioned adjacent the concentric grooves 64. between. The concentric grooves 64 provide areas where the processing residue can be gathered and the residue can be, run-down' into the grooves 64 for collection. Moreover, the concentric recess 10 64 increases the surface area of the component surface 22 such that more and wider texture features 35 are formed on the surface 22, thereby reducing a deposited film, bridge, and the surface 22 On the hole or recess. The larger the surface area of the textured surface 22, the more the area of the adsorbable residue can be increased. Thereby, the surface 22 comprising the concentric recess 64 and the electron beam relief recess 66 provides better performance during processing of the substrate 1 4 and allows for further cleaning of the component 1 A large amount of residue collects on the surface 22 of the element. In one example, the textured surface 22 includes concentric grooves 64 that are formed to be relatively deep to enhance the accumulation and retention of processing debris. For example, the grooves 64 may be deeper than those typically formed by knurling, and may have a depth d of at least about 3 mm, such as from about 3 mm to about 8 mm, and one of which is about 5 mm, which is From the lowest point of the groove 64 to the highest point of a surface area 70 between the grooves 64. The concentric recess 64 preferably has a ring shape, such as a circular shape or even an elliptical shape. The grooves 64 are concentric about a central axis of the element 100 and may also be the central axis of the processing chamber 106. 31 M293527 The spacing of the grooves 64 is given by a recess 66 which provides the optimum number and spacing therebetween. For example, the grooves 64 may have a radial spacing r between adjacent grooves, which is given at least 2 times the width w between adjacent recesses 66, even at least about adjacent concave The width between the grooves 66 is ~3 times. For example 5, the radial spacing r of the adjacent grooves 64 can be at least about 5 mm, such as from about 5 mm to about 7 mm, and can be an average of 6 mm, while the width w between adjacent grooves 66 can be less than About 3 mm, for example from about 1 mm to about 3 mm, can be on average about 2 mm. The concentric recess 64 can also be formed on the surface 22 such that the surface area 7 之间 between the recesses 64 has a substantially concave surface profile, 10 as shown in FIG. The concave surface contours of the surface regions 70 taper into the grooves 64 to provide a slid, flow, path in the grooves 64 of the processing debris. Suitable methods of forming the equivalent center groove 64 include machining methods, such as with cutting and/or rolling tools. For example, the equivalent recess 64 15 can be cut into the surface 22 of the component construction 11 by a computer numerical control (CNC) machining method. In this CNC method, the desired groove shape and depth are programmed in a computer controller to control a cutting device, such as a rotary cutter, which cuts the grooves 64 in the surface 22. The computer controller includes code to direct the cutting device to cut the component surface 22 by a predetermined amount to form a desired recess 64. Other methods of forming the desired groove shape may also employ conventional methods well known in the art. The machining method used to form the concentric grooves 64 preferably also forms a recessed surface area 70 between the grooves 64. For example, the cutting tool can include a one or more angle cutting tool that can form a progressively inclined groove sidewall 72. Other customary

32 M293527 銑削及切割方法亦可使用來形成所要的凹槽，且亦可使用 其他習用的金屬成形方法，例如雷射切割及彎折方法。 其中一種實例中，該等電子束紋理凹部66的形成是藉 由令一電子束40掃描橫過該元件的表面22,以於該表面22 5 上形成電子束紋理凹部66，如第8圖所示。此等紋理凹部66 的一例子可以一Lavacoat™製程所形成，其詳述如West等人 的U.S·專利申請號碼10/653,713，申請日於2003年9月2曰， 公告日於2005年3月3日，U.S.申請公告號碼2005/0048876， 名稱為”具有紋理表面之製造及清潔腔室元件’’、 10 Popiolkowski等人的U.S·專利申請號碼1〇/〇99,307，申請曰 於2002年3月13日，公告日於2003年9月18日，U.S·申請公 告號碼2〇03/ΟΠ3526，以及Popiolkowski等人的U.S·專利號 碼6,812,471，發證日於2004年11月2日，公告日於2004年3 月25日’ U.S·申清公告5虎碼2004/0056211，全部共同讓渡予 15應用材料股份有限公司，在此以其全部内容併入本案做為 參考資料。Lavacoat™製程所形成的電子束紋理特徵幻，其 可包含數凹部66以及凸部67，使加工期間所產生的加工沉 積物可吸附於上。 此Lavacoat™紋理表面22可藉產生電磁能量束4〇，例如 20 一電子束40,且將該電磁能量束導引於該元件100的表面22 上所形成。儘管電磁能量束宜為電子束，然而亦可包括質 子、中子、X射線等等。該電子束4〇一般是以歷時一段時間 來聚集於該表面22的-區域上，於此期間該電子束4〇會與 該表面22進行交互仙，以於該表面22上形成紋理^徵 33 M293527 65。據信該電子束4G是藉由快速加熱該表面22的區域來形 成該等特徵65，於某些情形會達到該表面材料之您點。此 快速加熱會導致該表面材料向外凸出，藉此於材料凸出區 或I成凹αΡ66 ’且可於材料凸出後再度沉積之區域形成凸32 M293527 Milling and cutting methods can also be used to form the desired grooves, and other conventional metal forming methods such as laser cutting and bending methods can be used. In one example, the electron beam texture recesses 66 are formed by scanning an electron beam 40 across the surface 22 of the component to form an electron beam texture recess 66 on the surface 22 5, as shown in FIG. Show. An example of such textured recesses 66 can be formed by a LavacoatTM process, as described in detail in US Patent Application Serial No. 10/653,713, issued to West et al., filed on September 2, 2003, and on 3rd, US Application Publication No. 2005/0048876, entitled "Manufacturing and Cleaning Chamber Elements with Textured Surfaces", 10 Popiolkowski et al. US Patent Application No. 1/〇99,307, filed in March 2002 On the 13th, the announcement date was September 18, 2003, the US application number was 2〇03/ΟΠ3526, and the US patent number of Popiolkowski et al. 6,812,471, the issuing date was November 2, 2004, and the announcement date was 2004. On March 25th, 'US·Shenqing Announcement 5 Tiger Code 2004/0056211, all of which were jointly transferred to 15 Applied Materials Co., Ltd., the entire contents of which are incorporated herein by reference. The LavacoatTM process is formed. The electron beam texture features a plurality of recesses 66 and protrusions 67 that allow processing deposits generated during processing to be adsorbed thereon. The LavacoatTM textured surface 22 can be produced by generating an electromagnetic energy beam, for example, an electron. Bunch 40, and will The electromagnetic energy beam is directed to the surface 22 of the element 100. Although the electromagnetic energy beam is preferably an electron beam, it may also include protons, neutrons, X-rays, etc. The electron beam 4 is generally a period of time. To be concentrated on the region of the surface 22, during which the electron beam 4〇 interacts with the surface 22 to form a texture on the surface 22, M293527 65. It is believed that the electron beam 4G is borrowed. These features 65 are formed by rapidly heating the area of the surface 22, which in some cases will reach the point of the surface material. This rapid heating causes the surface material to bulge outwardly, thereby embossing the material or I Concave α Ρ 66 ' and can form a convex area in the area where the material is re-deposited

部67。於該區_朗欲特徵之後，該電子束4G會掃描元 件表面22不同的區域’藉此於新的區域上形成特徵。其中 κ例中’在該7〇件構造u的表面22上已形成該等同心凹 槽64之後，該元件_的表面22會㈣電子束崎描，且具 所要密度的紋理凹部66即可形成於相鄰凹⑽之間。另一 ίο種貝例中，在形成該等電子束紋理凹部66之後，可再形成 該等凹槽64於該表面上。 該電磁能量束4〇可掃描橫過該表面以⑽該表面π 上形成所欲圖案之紋理特徵65，例如由凹部66及凸部…所 構成之蜂巢狀結構。以此種方法形成之特徵55典型地是呈 15巨觀尺寸。舉例來說，該等凹部66從該表面22的基面68所 測1之深度d疋自約25微米（〇·〇〇ι英对）至約1524微米 (0.060英吋）。該等凹部66的表面直徑…可為自約127微米 (0.005英吋）至約2540微米（〇·ι英吋），且甚至為自約2〇3 微米（0.008英忖）至約2261微米（〇〇89英对）。該等凸部 20 67可具有在該基面68上方的高度h為自約51微米（0.002英 吋）至約1524微米（0_060英吋），且甚至為自約51微米（〇 〇〇2 英吋）至約1168微米（〇·〇46英吋卜該以權⑽严紋理表面 22可具有一整體表面粗糙度平均值是自約25〇〇微英吋（64 微米）至約4000微英对（1〇2微米），該表面22之粗糍:度平 34 M293527 均值定義是自該等特徵的中線至該表面22的距離平均值。 在以該電磁能量束40掃描之後該紋理表面22亦可進一步粗 糙化以於該表面22上形成不同程度的紋理，其例子詳述於 Popiolkowski等人及West等人的專利申請案，内容併入參考 5資料。舉例來說，該表面22可藉以加壓氣體喷射噴粒向該 表面22來進行喷粒加工，或是可以化學方式粗糙化，以形 成相當細微紋理覆於該表面22上的巨觀尺寸特徵65。該電 子束紋理表面22可改善加工沉積物的吸附性以降低該加工 基材104的污染。 10 其一種實例中，一種適當的加工腔室106顯示於第1 圖，具有一元件100，其具有該紋理表面22。該腔室106可 為一多腔室平台（未圖示）的一部分，該多腔室平台係具 有一組以一機械手臂機構來令基材1〇4於腔室1〇6之間進行 轉移連接之交互連接腔室群組。於所顯示之實例中，該加 15工腔室係包含一個喷濺沉積腔室，亦稱為一物理氣相沉 積或PVD腔室，此腔室可以於一基材1〇4上喷賤沉積材料， 例如：一種或數種鈕、氮化鈕、鈦、氮化鈦、銅、鎢、氮 化鎢、及鋁。此腔室的其中一種型式是一PVD A1腔室，其 一實施例亦可於Yu等人的U.S.專利號碼6,660，135所述，發 20證日於2〇〇3年12月9日，共同讓渡予應用材料股份有限公 司，在此以其全部内容併入本案做為參考資料。該腔室106 包括包圍一加工區域109之密閉壁118，此密閉壁118係包含 側壁164、一底壁166、及一頂壁168。一支撐環130可予以 裝設於該等側壁164與頂壁168之間。該腔室亦可具有擋板 35 M293527 120來遮蔽該等密閉壁118受到喷濺。該等腔室擋板120可包 含一或多個上播板120a來保護該腔室106的上部，例如腔室 側壁164的上部及頂壁168，及一下擋板120b來保護該腔室 106的下部，例如腔室側壁164的下部及底壁166。 5 該腔室106係包含：一用以支撐配置於該喷濺沉積腔室 106内的基材之基材支撙件114。該基材支撐件114可以使用 電力飄浮，或者使用以一供電器172(例如：一射頻供電器） 來產生偏壓之電極170。該基材支撐件114亦可支撐其他晶 圓104，例如可移動感測光圈i〇4b，此感測光圈l〇4b可用以 10保護沒有置放基材104之支撐件114頂面134。於運作時，基 材104是經由腔室1〇6的一側壁164内的基材載入口（未圖示） 來進入該腔室106内。於移轉該基材104進出該腔室1〇6期 間，該支撐件114可以令支撐升降氣囊進行升高或降低，且 該置放於該支撐件114上之基材可使用一升降手指裝置（未 15圖示）來進行升高或降低。 5亥支撐件114亦可包含一個或數個環，例如一固持夾2〇 或沉積環128,其可包覆支撐座130至少一部分頂面134來避 免蝕刻支撐件114。於一實例中，該沉積環丨28環繞至少部 分之基材104來保護該支撐件114不受該基材1〇4包覆之部 2〇分。該固持夾2〇係包圍及覆蓋至少一部分的沉積環128，藉 此減少微粒沉積於該沉積環丨2 8及底層（underlying)支撐件 114 〇 一加工氣體，例如喷濺氣體，是經由一氣體輸送系統 112來予以導入該腔室106内，該氣體輪送系統係包含一加 36 M293527 工氣體供應器，此供應器包含一個或數個氣體供應源174， 其個別經由一具有一氣體流動控制閥178(例如：一流量控 制器）之管路176來供應該流通且達到一設定流速之氣體。 該管路176可將氣體餵送入一攙合歧管（未圖示），數種氣體 5 可攙合而形成一所欲之加工氣體組成物。此攙合政管會將 一氣體餵送入一氣體輸送器180，此氣體輸送器180具有一 個或數個裝設於該腔室106之氣體出口 182。該加工氣體可 以包含一種不具有反應性之氣體，例如氬氣或氙氣，此等 氣體能夠強力撞擊靶材且藉此導致靶材材料進行喷濺。該 10 加工氣體亦可以包含一種具有反應性之氣體，例如一種或 數種含氧及含氮之氣體，此等氣體能夠藉由與喷濺材料進 行反應來形成一個覆蓋基材104之層體。耗用後之加工氣體 及副產物是自該腔室106經由一排放部122來進行排放，此 排放部120係包含一個或數個排放口 184，其是藉由將接收 I5 之耗用後加工氣體通入一具有節流閥188之排放管路186， 來控制該腔室106的氣體壓力。該排放管路186會連通一部 或數部排放泵190。該腔室106之喷濺氣體壓力一般是設定 在低於大氣壓力之等級。 該喷錢腔室106進一步包含一個面朝基材104表面1〇5 20 之喷濺靶材124,該靶材124是由該欲喷濺基材104之材料所 構成，例如鋁、銅、鈦、钽、及氮化钽。該靶材124係以一 環狀絕緣環132來與該腔室106形成絕緣，且連接一供電器 192。該靶材124可包含一靶材背板，其具有一靶材框緣125 以曝露於該腔室106内。該喷濺腔室1〇6亦具有一擋板12〇，Part 67. After the region's feature, the electron beam 4G scans a different region of the component surface 22 to form features on the new region. In the κ case, after the equivalent center groove 64 has been formed on the surface 22 of the 7-piece structure u, the surface 22 of the element _ will be electronically beamed, and the textured recess 66 having a desired density can be formed. Between adjacent recesses (10). In another example, after forming the electron beam texture recesses 66, the grooves 64 may be formed on the surface. The electromagnetic energy beam 4A can scan a textured feature 65 across the surface to form a desired pattern on the surface π, such as a honeycomb structure composed of recesses 66 and protrusions. The feature 55 formed in this manner is typically in a 15 gauge size. For example, the recesses 66 have a depth d measured from the base surface 68 of the surface 22 from about 25 microns (〇·〇〇ι英 pairs) to about 1524 microns (0.060 inches). The surface diameter of the recesses 66 can be from about 127 micrometers (0.005 inch) to about 2540 micrometers (〇 ι 吋), and even from about 2 〇 3 micrometers (0.008 inches) to about 2261 micrometers ( 〇〇89英)). The protrusions 20 67 can have a height h above the base surface 68 of from about 51 microns (0.002 inches) to about 1524 microns (0-060 inches), and even from about 51 microns (〇〇〇2 英)吋) to about 1168 microns (〇·〇46 inches) The weight (10) of the fine textured surface 22 may have an overall surface roughness average of from about 25 〇〇 micro-inch (64 microns) to about 4000 micro-pairs. (1 〇 2 μm), the roughness of the surface 22: degree 34 M293527 The mean value is defined as the average of the distance from the midline of the features to the surface 22. The textured surface 22 after scanning with the electromagnetic energy beam 40 It may be further roughened to form different degrees of texture on the surface 22, examples of which are described in detail in the patent application of Popiolkowski et al. and West et al., the disclosure of which is incorporated herein by reference. The pressurized gas jet granules are subjected to granulation processing to the surface 22, or may be chemically roughened to form a macroscopically sized feature 65 that is relatively finely textured over the surface 22. The electron beam texture surface 22 may be improved. Processing the adsorption of sediment to reduce the addition Contamination of substrate 104. In one example, a suitable processing chamber 106 is shown in Figure 1 having an element 100 having the textured surface 22. The chamber 106 can be a multi-chamber platform (not As shown in part, the multi-chamber platform has a set of interconnecting chambers that are connected by a mechanical arm mechanism to transfer the substrate 1 to 4 between the chambers 1 and 6. In an example, the chamber 15 includes a sputter deposition chamber, also known as a physical vapor deposition or PVD chamber, which can squirt deposition material on a substrate 1〇4, for example: One or more kinds of buttons, nitride buttons, titanium, titanium nitride, copper, tungsten, tungsten nitride, and aluminum. One of the types of the chamber is a PVD A1 chamber, and an embodiment thereof may also be used in Yu, etc. The person's US patent number 6,660,135, issued 20 certificates on December 9, 2002, was jointly transferred to Applied Materials Co., Ltd., and the entire contents thereof are incorporated herein by reference. The chamber 106 includes a closed wall 118 surrounding a processing region 109, the closed wall 118 including sidewalls 164 A bottom wall 166 and a top wall 168. A support ring 130 can be disposed between the side walls 164 and the top wall 168. The chamber can also have a baffle 35 M293527 120 to shield the closed walls 118 from being received. The chamber baffles 120 may include one or more upper panels 120a to protect the upper portion of the chamber 106, such as the upper and top walls 168 of the chamber sidewalls 164, and a lower baffle 120b to protect the chamber. The lower portion of the chamber 106, such as the lower portion of the chamber sidewall 164 and the bottom wall 166. 5 The chamber 106 includes a substrate support member 114 for supporting a substrate disposed within the spray deposition chamber 106. The substrate support 114 can be floated using electrical power or an electrode 170 that is biased by a power supply 172 (e.g., a RF power supply). The substrate support 114 can also support other wafers 104, such as a movable sensing aperture i〇4b, which can be used to protect the top surface 134 of the support member 114 from which the substrate 104 is not placed. In operation, the substrate 104 enters the chamber 106 via a substrate loading port (not shown) in a side wall 164 of the chamber 1〇6. The support member 114 can raise or lower the supporting lifting airbag during the movement of the substrate 104 into and out of the chamber 1 , 6 , and the substrate placed on the supporting member 114 can use a lifting finger device. (not shown in 15) to raise or lower. The 5 liter support 114 can also include one or more rings, such as a retaining clip 2 沉积 or a deposition ring 128 that can overlie at least a portion of the top surface 134 of the support seat 130 to avoid etching the support 114. In one example, the deposition ring 28 surrounds at least a portion of the substrate 104 to protect the support member 114 from portions of the substrate 1〇4. The retaining clip 2 surrounds and covers at least a portion of the deposition ring 128, thereby reducing particulate deposition on the deposition ring 28 and the underlying support 114. A process gas, such as a splash gas, is passed through a gas. A delivery system 112 is introduced into the chamber 106. The gas delivery system includes a 36 M293527 gas supply, the supply comprising one or more gas supply sources 174, each individually having a gas flow control A line 176 of valve 178 (e.g., a flow controller) supplies the gas that circulates and reaches a set flow rate. The line 176 feeds the gas into a manifold (not shown), and the plurality of gases 5 can be combined to form a desired process gas composition. The manifold will feed a gas into a gas conveyor 180 having one or more gas outlets 182 mounted in the chamber 106. The process gas may comprise a non-reactive gas, such as argon or helium, which is capable of striking the target strongly and thereby causing the target material to be sputtered. The 10 process gas may also comprise a reactive gas, such as one or more oxygen and nitrogen containing gases, which are capable of forming a layer covering the substrate 104 by reacting with the sputter material. The spent process gas and by-products are discharged from the chamber 106 via a discharge portion 122 that includes one or more vents 184 that are processed by the I5 after receiving The gas is passed into a discharge line 186 having a throttle valve 188 to control the gas pressure of the chamber 106. The discharge line 186 is connected to one or more discharge pumps 190. The pressure of the sputtering gas in the chamber 106 is generally set to a level lower than atmospheric pressure. The money spray chamber 106 further includes a splash target 124 facing the surface of the substrate 104, the target 124 being formed of the material of the substrate 104 to be sputtered, such as aluminum, copper, titanium. , tantalum, and tantalum nitride. The target 124 is insulated from the chamber 106 by an annular insulating ring 132 and is connected to a power supply 192. The target 124 can include a target backing plate having a target frame edge 125 for exposure within the chamber 106. The splash chamber 1〇6 also has a baffle 12〇.

37 M293527 可保護該腔室106之一壁118受到材料喷濺。該擋板i2〇可藉 由包含一具有上及下擋板區段12〇a，i2〇b之壁狀圓柱形，來 遮蔽腔室106之上及下區域。於第丨圖所顯示之實例中，該 擋板120具有一安裝於該支撐環13〇之上區段12如，及一配 5 合設置於該固持夾20之下區段120b。亦可設置一包含夾持 環的擋夾141，以將該等上及下擋板區段12〇a，b夾固在一 起。亦可使用其他可選擇之擋板設計，例如内緣及外緣擋 板。於一實例中，一個或數個供電器192、乾材124、及播 板120是藉由有如一部氣體激發器n6之運作，來激發喷濺 10氣體及產生靶材124喷濺。該供電器192會相對於該擋板120 來對該乾材124施加一偏壓。藉由施加電壓會於該腔室1〇6 内部產生電場，此電場會激發喷濺氣體形成一道電漿，此 電漿會強力撞擊及轟擊該靶材124，藉此令噴濺材料離開該 靶材124，且其後到達該基材1〇4上。該支撐件114具有電極 15 17()，且支撐件電極供電器172亦可藉由激發及加速令離子 化材料自該靶材124離開且朝向該基材1〇4喷濺來參與部分 之氣體激發器116運作。再者，可以於該腔室1〇6内部裝設 一以供電器192供電之氣體激發線圈135，此線圈135可增進 激發氣體特性，例如改善激發氣體密度。該氣體激發線圈 2〇丨35可使用一個連接一擋板120或該腔室106其他壁面之線 圈支撐座137來予以支撐。 該腔室106是以一控制器194來進行調控，此控制器194 係包含指令程式碼，此等指令是設定該腔室1〇6組件之運 作’俾以達成於該腔室1〇6内進行基材1〇4加工。舉例來說，The 37 M293527 protects one of the walls 118 of the chamber 106 from material splashing. The baffle i2 can shield the upper and lower regions of the chamber 106 by including a wall-shaped cylindrical shape having upper and lower baffle sections 12a, i2b. In the example shown in the figure, the baffle 120 has a section 12 mounted on the support ring 13A, and a section 52b disposed under the retaining clip 20. A retaining clip 141 including a clamping ring may also be provided to clamp the upper and lower baffle sections 12a, b together. Other alternative baffle designs are also available, such as the inner and outer rims. In one example, one or more of the power supply 192, the dry material 124, and the broadcaster 120 are operated by, for example, a gas energizer n6 to excite the spattered 10 gas and produce the target 124 to be sputtered. The power supply 192 applies a bias to the dry material 124 relative to the baffle 120. By applying a voltage, an electric field is generated inside the chamber 1〇6, which excites the splash gas to form a plasma that strongly strikes and bombards the target 124, thereby causing the splash material to leave the target. Material 124, and thereafter reaches the substrate 1〇4. The support member 114 has an electrode 15 17 (), and the support electrode power supply 172 can also participate in the partial gas by ejecting and accelerating the ionized material away from the target 124 and splashing toward the substrate 1〇4. The trigger 116 operates. Further, a gas excitation coil 135 powered by a power supply 192 may be disposed inside the chamber 1〇6, and the coil 135 may enhance the characteristics of the excitation gas, for example, the excitation gas density. The gas exciting coil 2 〇丨 35 can be supported by a coil support 137 that connects a baffle 120 or other wall of the chamber 106. The chamber 106 is regulated by a controller 194, which includes an instruction code for setting the operation of the chamber 1〇6 to be achieved in the chamber 1〇6. The substrate 1〇4 was processed. for example,

38 M293527 該控制器194可以包含：一基材定位指令，此指令是設定一 個或數個基材支撐件114及基材移轉裝置之運作，俾以達成 將一基材104定位於該腔室106内；一氣體流動控制指令， 此指令是設定該等流動控制閥178之運作，俾以設定流入該 5腔室106之喷錢氣體；一氣體壓力控制指令，此指令是設定 排氣節流閥188之運作，俾以維持該腔室的内部壓力； 一氣體激發控制指令，此指令是設定該氣體激發器116之運 作，俾以設定氣體激發之電力等級；一溫度控制指令，此 指令是設定該腔室106内的溫度控制；以及一製程監測指 10 令’此指令是设定該腔室106内進行加工之監測。 於該腔室106中，具紋理表面22之該等元件1〇〇可包含 有例如：該氣體輸送系統112的一部分、一基材支撐件114、 氣體激發器116、腔室密閉壁118、擋板120[例如上及下擋 板120a，b]、氣體排放部122、把材124、乾材框緣125、固持 15夹20 (或覆蓋環126)、沉積環128、支撐環130、絕緣環132、 線圈135、線圈支撐座137、加工套件139、感測光圈1〇41)、 播夾141、及该基材支樓件114的一表面134。具紋理表面22 之該等元件1〇〇亦可由腔室的元件所構成，例如蝕刻腔室、 預清潔腔室、灰化(ashing)腔室、CVD腔室，以及其他腔室。 20 雖然本創作顯示並描述實施具體例，然而那些熟習此 項技藝人士可參照本創作來設計其他具體例，本創作範鳴 係涵概此等具體例。例如：亦可設置不同於在此所述的實 例中之其他固持夾構形。且，該固持夾可為不同於此述的 加工腔室之一部分。並且，可根據上述方法的其中一種對 39 M293527 5 10 15 20 示上述特定者外的腔室元件 中所述的相對或位置關係亦可里加卫。此外，實施例 專利範園不於_本_述二因此，本案檢附申請 空間安排。 述之較佳具體例、材料、或 【陶武簡單説明】 第1圖是加工腔室具有特定紋理丰 例之部分剖導圖； W件的-實施 實施ΓΑ圖是腔室擋板具有形成有相對螺旋凹槽的表面的 夏也例之部分剖面側視圖； 圖是環雜室元件具有形财相對職凹槽的表 W只施例之部分剖面側視圖； 第2C圖是腔室播板具有第_及第二表面紋理圖案的實 &例之部分剖面側視圖； 、 ^第3圖是腔室元件具有已藉切割刀片形成有凹槽 ^例之部分剖面側視圖； /第4圖是具凹槽腔室元件包含圓形邊緣的實施例 分剖面側視圖； U 第5Α圖是具有滾花表面的固持夾的實施例之頂視圖； 圖第5Β圖是具有滾花表面的固持夾的實施例之剖面側視 第6Α圖是具有堅硬邊緣的滾花工具的實施例之平面 圖； 第6Β圖是第6Α圖的滾花工具的堅硬邊緣的實施 剖面側视圖； 、也列之 40 M293527 第7圖是元件具有以數電子束紋理凹部設於同心凹槽 之間的紋理表面的實施例之剖面側視圖；及 第8圖是形成於元件的表面中的電子束紋理凹部的實施例38 M293527 The controller 194 can include: a substrate positioning command that sets the operation of one or more of the substrate support 114 and the substrate transfer device to achieve positioning of a substrate 104 in the chamber. 106; a gas flow control command, the command is to set the operation of the flow control valve 178, to set the money flowing into the 5 chamber 106; a gas pressure control command, the command is to set the exhaust throttle The operation of the valve 188 is to maintain the internal pressure of the chamber; a gas excitation control command, the command is to set the operation of the gas trigger 116, to set the power level of the gas excitation; a temperature control command, the command is The temperature control within the chamber 106 is set; and a process monitoring finger 10 command "this command is to set up monitoring of processing within the chamber 106. In the chamber 106, the elements 1 of the textured surface 22 may include, for example, a portion of the gas delivery system 112, a substrate support 114, a gas energizer 116, a chamber containment wall 118, and a block. Plate 120 [eg upper and lower baffles 120a, b], gas discharge portion 122, material 124, dry material frame edge 125, holding 15 clip 20 (or cover ring 126), deposition ring 128, support ring 130, insulating ring 132. A coil 135, a coil support base 137, a processing kit 139, a sensing aperture 1〇41), a clip 141, and a surface 134 of the substrate support member 114. The elements 1 of the textured surface 22 may also be comprised of elements of the chamber, such as an etch chamber, a pre-clean chamber, an ashing chamber, a CVD chamber, and other chambers. 20 Although the present application shows and describes a specific example of implementation, those skilled in the art can refer to the present invention to design other specific examples, and the present exemplary embodiment covers such specific examples. For example, other retention clip configurations other than those described herein can also be provided. Also, the retaining clip can be a portion of the processing chamber that is different from that described herein. Also, the relative or positional relationship described in the chamber elements other than the above-described specific ones may be added to one of the above methods to 39 M293527 5 10 15 20 . In addition, the example patent garden is not in the _ this _ second, therefore, the case is attached to the application space arrangement. Preferred specific examples, materials, or [Taowu simple description] Fig. 1 is a partial cross-sectional view of a processing chamber having a specific texture. The W-implementation implementation is a chamber baffle having a formation A cross-sectional side view of a portion of the surface of the spiral groove relative to the surface of the spiral groove; the figure is a partial cross-sectional side view of the table of the embodiment of the ring-shaped compartment element having a shape-receiving groove; FIG. 2C is a chamber broadcast plate having A partial cross-sectional side view of the actual and/or example of the first and second surface texture patterns; , FIG. 3 is a partial cross-sectional side view of the chamber element having a groove formed by the cutting blade; / FIG. 4 is A cross-sectional side view of an embodiment having a recessed chamber member including a rounded edge; U is a top view of an embodiment of a retaining clip having a knurled surface; and Fig. 5 is a retaining clip having a knurled surface Cross-sectional side view of the embodiment is a plan view of an embodiment of a knurling tool having a hard edge; Figure 6 is a cross-sectional side view of the hard edge of the knurling tool of Figure 6; also listed 40 M293527 Figure 7 is a component with a number of electron beam patterns A cross-sectional side view of an embodiment of a textured surface disposed between concentric grooves; and FIG. 8 is an embodiment of an electron beam textured recess formed in a surface of an element

之剖面側視圖。 【主要元件符號說明】 10…元件 11…元件構造 12…沉積環 20…固持夹 22…表面 24…環體 26…環形外部 28…基材圓周 30…凸伸部 31…内壁直徑 33…内壁 33a，b···向下延伸壁 34…頂面 34a，b···頂面 35…圖案特徵 36…外側面 37…開口 38…内側表面 39…基材環周 40…電子束 42,42a，42b …脊部 44,44a，44b …溝部 46…中心線 49…連接空間 50…滾花工具 52…滾花頭部 53…中心線 54…輪體 55…表面 56…堅硬邊緣 58…齒 60…間隙 62a，b…第一，二表面紋理圖案 64…凹槽 65…電子束紋理特徵 66…電子束紋理凹部 67…凸部 68…基面 41 M293527 70…表面區域 104…基材加工裝置 72…凹槽側壁 104b…感測光圈 73…切割刀具 105…基材頂面 75…尖端 106…基材加工腔室 76…邊緣 109…腔室加工區域 80a，80b…右，左旋螺旋凹槽 112…氣體輸送系統 81…非凹槽部 114…基材支樓件 82a，b· · •螺旋起始點 116…氣體激發器 83…連續段部 118…密閉壁 84a,b…螺旋終止點 120…腔室擋板 85…中心 120a.··上擋板 86…粗糙區域 120b…下擋板 87…環周 122…排放部 92…環形凹槽 124…喷濺靶材 94···中心軸 125…靶材框緣 95a，b…第一，第二紋理圖案 126…覆蓋環 96a，b，c···第一，二，三紋理贗 |案 128…沉積環 區域 130…支撐環 97…中間部 132…絕緣環 98a，b···紋理特徵 134…頂面 99a，b…螺旋臂 135…氣體激發線圈 100…元件 137…線圈支撐座 101…頂部 139…加工套件 103…底部 141…擋夾 42 M293527 164…側壁 166…底壁 168…頂壁 170…電極 172…供電器 174…氣體供應源 176…管路 178···氣體流動控制閥 180···基材納置表面 182···氣體出口 184···排放口 186···排放管路 188···排氣節流閥 190…排放泵 192···供電器 194···控制器Side view of the section. [Major component symbol description] 10...element 11...element structure 12...deposition ring 20...holding clip 22...surface 24...ring 26...annular outer 28...substrate circumference 30...projection 31...inner wall diameter 33...inner wall 33a , b··· downwardly extending wall 34... top surface 34a, b··· top surface 35... pattern feature 36... outer side surface 37... opening 38... inner side surface 39... substrate circumference 40... electron beam 42, 42a, 42b ... ridges 44, 44a, 44b ... groove 46 ... center line 49 ... connection space 50 ... knurling tool 52 ... knurling head 53 ... center line 54 ... wheel body 55 ... surface 56 ... hard edge 58 ... tooth 60 ... Gap 62a, b... first, two surface texture patterns 64... grooves 65... electron beam texture features 66... electron beam texture recesses 67... convex portions 68... base faces 41 M293527 70... surface regions 104... substrate processing devices 72... Groove side wall 104b...sensing aperture 73...cutting tool 105...substrate top surface 75...tip 106...substrate processing chamber 76...edge 109...chamber processing area 80a,80b...right,left-handed spiral groove 112...gas Conveying system 81...non-groove portion 114...substrate branch member 82a,b· • Spiral starting point 116... Gas igniter 83... Continuous section 118... Sealing wall 84a, b... Spiral ending point 120... Chamber baffle 85... Center 120a.· Upper baffle 86... Rough area 120b... Lower block Plate 87...ring circumference 122...discharging portion 92...annular groove 124...splashing target 94··· center axis 125...target frame edge 95a,b...first, second texture pattern 126...covering ring 96a,b , c··· first, second, third texture 赝 | case 128... deposition ring region 130... support ring 97... intermediate portion 132... insulation ring 98a, b···texture feature 134... top surface 99a, b... spiral arm 135...gas excitation coil 100...element 137...coil support base 101...top 139...machining kit 103...bottom 141...stopper 42 M293527 164...sidewall 166...bottom wall 168...top wall 170...electrode 172...power supply 174...gas Supply source 176...Pipe 178···Gas flow control valve 180···Substrate placement surface 182···Gas outlet 184···Discharge port 186···Discharge line 188···Exhaust throttling Valve 190...drain pump 192···power supply 194···controller

4343

Claims (1)

V VM293527V VM293527 第94210676號專利申請案申請^ 9$12月21曰 九、申請專利範圍： 1·一種能曝露於基材加工腔室内的激發氣體中之元件，該 元件包括： 5 (a)一元件構造，具有一表面，其包含有相反設置之 第一及第二螺旋凹槽， 藉此於一基材在該基材加工腔室内的激發氣體中加 工期間，加工殘渣可吸附於該元件構造的表面上的該等 修螺旋凹槽，藉以降低該基材受加工殘渣的污染。 10 2·如巾請專利範圍第i項之元件，其中該等第—及第二螺旋 凹槽包含有以下至少一種特性： “ (1)螺旋角度為至少約45。； (2) 深度為至少約〇 25πιιη ; (3) >朱度不多於約i 5mm;或 15 (4)圓形邊緣。 3·如申請專利範圍第丨項之元件，其中該等第一及第二螺旋 屬| 凹槽具有以下至少其一： (1)一第一間距於該表面的一第一區域中，及一第二 間距於該表面的一第二區域中；或 20 (2)一第一深度於該表面的一第一區域中，及一第二 深度於該表面的一第二區域中。 4·如申叫專利範圍第1項之元件，其中該表面進-步包含有 以下至少其一： (1)¼形凹槽，其為同心且相互軸向或徑向間隔橫過 25 該表面； M293527 (2) —粗糙區域，其具有平均表面粗糙度為自約1.6微 米至約12.5微米；或 (3) 非凹槽部於該等第一與第二螺旋凹槽之間，其為 實質上連續的段部，該等非凹槽部具有小於約0.1cm的尺 5 寸。 5. 如申請專利範圍第1項之元件，包括至少一部分的基材支 撐件、腔室圍繞壁、加工套件、擋板、氣體激發部、氣 體供應部及排氣部。 6. —種基材加工腔室，包括如申請專利範圍第1項之該元 10 件，該腔室包括一基材支撐件、一氣體激發部、一氣體 供應部，及一排氣部。 7. —種能曝露於基材加工腔室内的激發氣體中之腔室元 件，該元件包括： (a)—元件構造，具有一紋理表面，其包含有： 15 ⑴一第一紋理圖案區域，具有第一紋理特徵，其相互 間隔且各具有第一深度及第一密度，及 (ii)一第二紋理圖案區域，具有第二紋理特徵，其相 互間隔且各具有第二深度及第二密度， 其中第二深度及第二密度至少其一是不同於第一深 20 度及第一密度， 藉此於一基材加工期間加工殘渣可吸附於該表面，以 降低該基材之污染。 8. 如申請專利範圍第7項之元件，其中該等第一紋理特徵包 含一第一螺旋凹槽，其具有螺旋臂，具第一深度或間距， 2 M293527 及其中該等第二紋理特徵包含一第二螺旋凹槽，其具有第 二深度或間距。 9. 如申請專利範圍第8項之元件，其中該等第一或第二螺旋 凹槽各包含有螺旋臂，其以連續地變化其深度，其是自 5 該第一區域上為至少約0.8mm，至該第二區域上的第二深 度為少於約0.6mm，且以連續地變化其間距，其是自該第 一區域上的第一間距為少於約1.5mm，至該第二區域上的 第二間距為至少約1.8mm。 10. 如申請專利範圍第8項之元件，其中第一及第二螺旋凹 10 槽彼此相對。 11. 一種基材加工腔室，包括如申請專利範圍第7項之該元 件，該腔室包括一基材支撐件、一氣體激發部、一氣體 供應部，及一排氣部。 12. —種能曝露於一加工腔室内的激發氣體中之基材加工 15 腔室元件，該元件包括： (a) —元件構造；及 (b) 於該元件構造上之一表面，該表面包括⑴數同心凹 槽，其是橫過該表面徑向間隔，及(ii)電子束紋理凹部， 其形成於該表面上相鄰凹槽之間， 20 藉此加工殘渣可吸附於該表面以降低加工基材之污 染。 13. 如申請專利範圍第12項之元件，其中相鄰同心凹槽相互 分離一距離，其為相鄰電子束紋理凹部之間的距離之至 少兩倍。 M293527 14·如申請專利範圍第13項之元件，其中相鄰同心凹槽之間 的距離是自約5mm至約7mm，且該等凹槽之間相鄰電子 束紋理凹部之間的距離是自1mm至約3mm。 15. 如申請專利範圍第13項之元件，其中該表面上該等同心 5 凹槽的深度是自約3mm至約8mm，且該表面上該等電子 束紋理凹部的深度是自約25微米至約1524微米。 16. 如申請專利範圍第12項之元件，包括相鄰凹槽之間的表 面區域，其具有凹陷表面外廓。 17·如申請專利範圍第12項之元件，該元件包括至少一部分 10 的基材支撐件、腔室圍繞壁、氣體供應部、氣體激發部， 及排氣部。 18·—種基材加工腔室，包括如申請專利範圍第16項之該元 件，該腔室包括一基材支撐件、一加工氣體供應部、一 氣體激發部，及一排氣部。 15 I9·一種基材固持夾，用於一基材加工腔室，該固持夾包括： (幻一锿，包括一環部，其環繞於該腔室内的一基材， 及一凸伸部以覆蓋該基材的環周；及 ⑻於該凸伸部上之-滾花曝露表面，該滾花曝露表面 包括相間隔的滾花脊部及溝部。 20 20.如申請專利範圍第19項之固持夹，其中該滾花曝露表面 是該凸伸部之-表面’且包括同^脊部及溝部，其相互 徑向間隔。 21.如申請專利範圍第19項之固持夹，其中該㈣部及溝部 口具有由中〜線之幅度，其是至少約〇.5111〇：1且少於約 M293527 2.5mm。 ' 22.如申請專利範圍第19項之固持夾，其中相鄰脊部具有峰 :對峰距離為至少約〇.5mm且少於約2.5mm。 23·如申請專利範圍第項之固持夾，其中該等滾花脊部及 5 溝部是以環周地相互間隔。 24.如申請專利範圍第19項之固持夾，其中該環是由不鏽 鋼、鈦、銅或鋁至少一種所構成。 φ 25.一種基材固持夾，用於一加工腔室，該固持夾包括·· (a) —環，包括一環部，其環繞於該腔室内的一基材， 10 及一凸伸部，其自該環部向内延伸以覆蓋該基材的環 周，其中該環包括⑴一頂面，其延伸橫跨該凸伸部及環 部，及(ii)該環部之一外側面；及 (b) 於該頂面及外側面上之一滾花曝露表面，該滾花曝 露表面包括同心且徑向相間隔之滾花脊部及溝部，其中 15 3等’袞化脊部及溝部具有由—中心線之幅度為至少約 參 〇.5mm且少於約2·5随，且其中相鄰滾花脊部具有峰對峰 距離為至少約〇.5mm且少於約2.5mm。 %如申請專職圍第25項之固持夾，其中料側面是實質 上垂直於該頂面。 ' 2〇 27.如申請專利範圍第25項之固持夾，其中該環部包括第— 及第二向下延伸的環壁。 28·如申請專利範圍第25項之固持夹，其中該第-壁是相鄰 於该基材的環周，域第二壁是呈同心地於該第-壁外 側。Patent Application No. 94210676 ^ 9$12月19曰, Patent Application Range: 1. An element that can be exposed to an excitation gas in a processing chamber of a substrate, the element comprising: 5 (a) a component construction having a surface comprising oppositely disposed first and second spiral grooves, whereby the processing residue can be adsorbed on the surface of the element structure during processing of a substrate in the excitation gas in the substrate processing chamber The spiral grooves are modified to reduce contamination of the substrate by processing residues. 10 2· The object of claim i, wherein the first and second spiral grooves comprise at least one of the following characteristics: “(1) the helix angle is at least about 45.; (2) the depth is at least约25πιιη ; (3) > Zhu Du is not more than about i 5mm; or 15 (4) rounded edges. 3. The components of the scope of the patent application, wherein the first and second spirals | The groove has at least one of the following: (1) a first spacing in a first region of the surface, and a second spacing in a second region of the surface; or 20 (2) a first depth in a first region of the surface, and a second depth in a second region of the surface. 4. The component of claim 1, wherein the surface further comprises at least one of the following: (1) 1⁄4 shaped grooves which are concentric and mutually axially or radially spaced across the surface; M293527 (2) - a roughened region having an average surface roughness of from about 1.6 microns to about 12.5 microns; (3) a non-groove portion between the first and second spiral grooves, which is a substantially continuous segment, such The non-recessed portion has a size of less than about 0.1 cm. 5. The element of claim 1 includes at least a portion of the substrate support, the chamber surrounding wall, the processing kit, the baffle, the gas excitation portion, a gas supply portion and a venting portion. 6. A substrate processing chamber comprising the member 10 of claim 1, wherein the chamber comprises a substrate support member, a gas excitation portion, and a gas supply And a venting portion 7. A chamber element that is exposed to an excitation gas within the processing chamber of the substrate, the element comprising: (a) - a component construction having a textured surface comprising: (1) a first texture pattern region having a first texture feature spaced apart from each other and having a first depth and a first density, and (ii) a second texture pattern region having a second texture feature spaced apart from each other Having a second depth and a second density, wherein at least one of the second depth and the second density is different from the first depth by 20 degrees and the first density, whereby the processing residue can be adsorbed on the surface during processing of the substrate to Lower the substrate 8. The element of claim 7, wherein the first textured feature comprises a first helical groove having a helical arm having a first depth or spacing, 2 M293527 and the second of The texture feature comprises a second spiral groove having a second depth or spacing. 9. The element of claim 8 wherein the first or second helical grooves each comprise a helical arm that is continuous Deteriorating the depth from at least about 0.8 mm on the first region to less than about 0.6 mm on the second region, and continuously varying the spacing from the first The first spacing on a region is less than about 1.5 mm and the second spacing on the second region is at least about 1.8 mm. 10. The element of claim 8 wherein the first and second helical recesses 10 are opposite each other. A substrate processing chamber comprising the element of claim 7, wherein the chamber comprises a substrate support, a gas excitation portion, a gas supply portion, and an exhaust portion. 12. A substrate processing 15 chamber element that is exposed to an excitation gas within a processing chamber, the element comprising: (a) - a component configuration; and (b) a surface of the component construction, the surface Included are (1) a number of concentric grooves that are radially spaced across the surface, and (ii) electron beam texture recesses formed between adjacent grooves on the surface, whereby the processing residue can be adsorbed to the surface Reduce the contamination of the processed substrate. 13. The element of claim 12, wherein adjacent concentric grooves are separated from each other by a distance that is at least twice the distance between adjacent electron beam texture recesses. M293527. The element of claim 13, wherein the distance between adjacent concentric grooves is from about 5 mm to about 7 mm, and the distance between adjacent recesses of the electron beam texture between the grooves is 1mm to about 3mm. 15. The element of claim 13 wherein the depth of the concentric 5 groove on the surface is from about 3 mm to about 8 mm, and the depth of the electron beam texture recess on the surface is from about 25 microns to About 1524 microns. 16. The element of claim 12, comprising a surface area between adjacent grooves having a concave surface profile. 17. An element as claimed in claim 12, the element comprising at least a portion 10 of the substrate support, the chamber surrounding wall, the gas supply, the gas excitation, and the vent. 18. A substrate processing chamber comprising the element of claim 16 wherein the chamber comprises a substrate support, a process gas supply, a gas excitation, and a vent. 15 I9· A substrate holding clip for a substrate processing chamber, the holding clip comprising: (a phantom comprising a ring portion surrounding a substrate in the chamber, and a protrusion covering a circumferential circumference of the substrate; and (8) a knurled exposed surface on the projection, the knurled exposed surface comprising spaced knurled ridges and grooves. 20 20. Holding as claimed in claim 19 a clip, wherein the knurled exposed surface is the surface-surface of the protrusion and includes the same ridge portion and the groove portion, which are radially spaced apart from each other. 21. The holding clip of claim 19, wherein the (four) portion and The groove mouth has a width from the middle to the line, which is at least about 5.5111 〇:1 and less than about M293527 2.5 mm. ' 22. The holding clip of claim 19, wherein the adjacent ridges have peaks: The peak distance is at least about 〇5 mm and less than about 2.5 mm. 23. The retaining clip of claim 1, wherein the knurled ridge and the 5 groove are circumferentially spaced apart from each other. The holding clip of the 19th patent range, wherein the ring is made of at least one of stainless steel, titanium, copper or aluminum Φ 25. A substrate holding clip for a processing chamber, the holding clip comprising: (a) a ring comprising a ring portion surrounding a substrate, 10 and a convex portion of the chamber a projection extending inwardly from the ring portion to cover a circumference of the substrate, wherein the ring includes (1) a top surface extending across the protrusion and the ring portion, and (ii) one of the ring portions And an outer surface; and (b) a knurled exposed surface on the top and outer sides, the knurled exposed surface comprising concentric and radially spaced knurled ridges and grooves, wherein The portion and the groove have a width from the centerline of at least about 5 mm and less than about 2.5, and wherein the adjacent knurled ridges have a peak-to-peak distance of at least about 〇5 mm and less than about 2.5. Mm. % If applying for the retaining clip of the full-length enclosure, item 25, wherein the side of the material is substantially perpendicular to the top surface. '2〇27. As in the retaining clip of claim 25, the ring includes the first- a second downwardly extending annular wall. 28. The retaining clip of claim 25, wherein the first wall is adjacent to the substrate The circumference of the circumference, the second wall of the domain is concentric with the outer side of the first wall.
TW94210676U 2004-06-28 2005-06-24 Substrate processing chamber component having surface which adheres process residues TWM293527U (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/880,235 US20060005767A1 (en) 2004-06-28 2004-06-28 Chamber component having knurled surface
US10/990,100 US20050284372A1 (en) 2004-06-28 2004-11-16 Chamber component having grooved surface with depressions
US11/037,587 US20060188742A1 (en) 2005-01-18 2005-01-18 Chamber component having grooved surface

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113151798A (en) * 2021-04-29 2021-07-23 宁波江丰电子材料股份有限公司 Target material assembly and machining method thereof
TWI771504B (en) * 2017-10-11 2022-07-21 美商哈尼威爾國際公司 Multi-patterned sputter traps and methods of making

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI771504B (en) * 2017-10-11 2022-07-21 美商哈尼威爾國際公司 Multi-patterned sputter traps and methods of making
CN113151798A (en) * 2021-04-29 2021-07-23 宁波江丰电子材料股份有限公司 Target material assembly and machining method thereof

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