TWM275537U - Light-emitting diode package, cold cathode flurescence lamp and photoluminescence material thereof - Google Patents
Light-emitting diode package, cold cathode flurescence lamp and photoluminescence material thereof Download PDFInfo
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- TWM275537U TWM275537U TW094207298U TW94207298U TWM275537U TW M275537 U TWM275537 U TW M275537U TW 094207298 U TW094207298 U TW 094207298U TW 94207298 U TW94207298 U TW 94207298U TW M275537 U TWM275537 U TW M275537U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Description
M275537 16001-ltwf.doc/y 九、新型說明： 【新型所屬之技術領域] 本創作是有關於一種發光二極體（Light_Emitdng Diode ’ LED)之封裝結構，且特別是有關於一種具有光致 發光擴散(Photoluminescence Diffuser)材料之發光二極體 封裝結構。 【先前技術】 φ 近系年來，由於發光二極體的發光效率不斷提升，使 得發光二極體在某些領域已漸漸取代日光燈與白熱燈泡， 例如需要咼速反應的掃描器燈源、液晶顯示器的背光源或 前光源汽車的儀表板照明、交通號諸燈，以及一般的照明 裝置等。發光二極體與傳統燈泡比較具有絕對的優勢，例 如體積小、壽命長、低電壓/電流驅動、不易破裂、發光時 >又有熱輪射、不含水銀（沒有污染問題）、發光效率佳（省 電）等特性。以今日的生產技術與應用而言，在各種發光 二極體的色系中，最令人注目的莫過於白光發光二極體。 # 白光是一種多顏色的混合光，人眼所見的白光至少係 由兩種以上波長的色光所形成，如藍、黃色光混合而獲得 的二波長白光，或是由紅、綠、藍色光混合而獲得的三波 長白光。目前製作白光發光二極體的方式大致有下列三 種：（1)以紅、綠、藍光三個發光二極體晶片搭配（三波長 蜇），並藉由調整通過三個發光二極體晶片的電流以產生 均勻的白光，此種方式具有很高的發光效率，但其生產成 本也較高；（2)以藍光與黃光兩個發光二極體晶片搭配（二 M275537 16001-ltwf.doc/y 波長型）’並藉由調整通過兩個發光二極體晶片的電流以 產生均勻的白光，此種方式具有不錯的發光效率，且生產 成本較低；以及(3)以一個藍光二極體所產生的藍光為基 礎’激發黃色螢光體產生黃光，並藉由混光的方式產生白 光’此種方式生產容易、發光效率較低，但成本也較低。 因此，目前大部分的白光發光二極體皆採用藍光激發黃色 螢光體的模式來產生白光。 Φ 圖1繪示為習知白光發光二極體之封裝結構示意圖。 請參照圖1，習知白光發光二極體之封裝主要係由封裝接 腳100、藍光發光二極體晶片1〇2、膠體104以及封裝膠體 所構成。其中，藍光發光二極體晶片1〇2係配置於封 裝接腳100上，且透過二焊線108與封裝接腳1〇〇構成電 性連接；膠體104中具有黃色螢光材料，且係覆蓋於藍光 發光二極體晶片1〇2之外圍；而封裝膠體1〇6係用以包覆 部份的封裝接腳100、藍光發光二極體晶片1〇2與膠體 φ 1〇4。上述白光發光二極體係利用藍光發光二極體晶片1〇2 所發出之藍光激發膠體104,以產生混合有藍光與黃光之 一波長白光。 ' 請參考圖2，其繪示為另一種習知技術中所揭露之白 光叙光―極體的結構示意圖。此白光發光二極體主要改良 之處係於上述膠體104上額外塗上一層擴散層11〇，此^ 散層110中含有透明膠體及分佈於其中之透明微粒或^ 泡，其原理是利用擴散層110中之透明微粒或氣泡使得光 線可產生多次的折射，而使混合後之光色更為均勻。 M275537 16001-ltwf.doc/y 然而，上述膠體104中之螢光粉與擴散層ll〇中 明微粒或氣泡間不管是材f、粒徑大小、粒子穷产 等因素需相互匹配’才能得到較佳的混級果，因此，与 響白光發光二極體之混光效果的變因較多，且: 及混光效果的控制上有其困難度。 、不 、衣邛M275537 16001-ltwf.doc / y IX. New type description: [Technical field to which the new type belongs] This creation is about a packaging structure of a light emitting diode (Light_Emitdng Diode 'LED), and in particular, it relates to a type of photoluminescence Photoluminescence Diffuser light-emitting diode packaging structure. [Previous technology] In recent years, due to the continuous improvement of the luminous efficiency of light emitting diodes, light emitting diodes have gradually replaced fluorescent lamps and incandescent light bulbs in some areas, such as scanner light sources and liquid crystal displays that require rapid response. Backlight or front light source of the car's instrument panel lighting, traffic lights, and general lighting devices. Compared with traditional light bulbs, light-emitting diodes have absolute advantages, such as small size, long life, low voltage / current drive, not easy to break, light emission > hot wheel emission, no mercury (no pollution problem), and luminous efficiency Good (power saving) and other characteristics. In terms of today's production technology and applications, in the color system of various light-emitting diodes, the most striking is the white-light emitting diode. # White light is a multi-color mixed light. The white light seen by the human eye is formed by at least two wavelengths of color light, such as two-wavelength white light obtained by mixing blue and yellow light, or red, green, and blue light. And obtained three wavelengths of white light. At present, there are roughly three ways to make white light-emitting diodes: (1) Match three light-emitting diode chips with red, green, and blue light (three-wavelength chirp), and adjust the three light-emitting diode chips that pass through. Electric current to produce uniform white light, this method has high luminous efficiency, but its production cost is also high; (2) with two light emitting diode chips with blue and yellow light (two M275537 16001-ltwf.doc / y wavelength type) 'and by adjusting the current passing through the two light-emitting diode wafers to produce uniform white light, this method has good luminous efficiency and low production costs; and (3) a blue light-emitting diode The blue light generated is based on 'excitation of yellow phosphors to generate yellow light and white light by means of mixed light'. This method is easy to produce, has low luminous efficiency, but also has low cost. Therefore, most white light emitting diodes currently use blue light to excite yellow phosphors to produce white light. Φ Figure 1 is a schematic diagram showing the packaging structure of a conventional white light emitting diode. Please refer to FIG. 1. A conventional white light emitting diode package is mainly composed of a package pin 100, a blue light emitting diode chip 102, a gel 104, and a packaging gel. Among them, the blue light emitting diode chip 102 is arranged on the package pin 100, and is electrically connected to the package pin 100 through the two bonding wires 108; the colloid 104 has a yellow fluorescent material and is covered It is on the periphery of the blue light emitting diode wafer 102; and the encapsulation gel 106 is used to cover part of the package pins 100, the blue light emitting diode wafer 102 and the colloid φ 104. The white light emitting diode system uses the blue light emitted from the blue light emitting diode wafer 102 to excite the colloid 104 to generate a white light having a wavelength mixed with blue light and yellow light. ′ Please refer to FIG. 2, which is a schematic diagram showing the structure of a white light narrating-polar body disclosed in another conventional technique. The main improvement of this white light emitting diode is that an additional layer of diffusion layer 11 is coated on the above-mentioned colloid 104. The dispersion layer 110 contains transparent colloid and transparent particles or bubbles distributed therein. The principle is to use diffusion The transparent particles or bubbles in the layer 110 allow the light to be refracted multiple times, and the mixed light color is more uniform. M275537 16001-ltwf.doc / y However, the fluorescent powder in the above colloid 104 and the particles or bubbles in the diffusion layer 110 must be matched with each other regardless of the material f, particle size, particle yield, etc. Therefore, there are many variables in the light mixing effect with the white light emitting diode, and there are difficulties in controlling the light mixing effect. , No, clothes
有關上述叙光二極體封裝結構與 獻，可請審查委員參照美國專利第溯925號^ == 專利第383·號之說明，以獲得進一步解^中華民國 【新型内容】 “ 可進士= Ϊ是在提供一種發光二極體封裝結構， lit 極體封裝結構之混光效果。 伞#πι的另目的就是在提供一種冷陰極燈管，利用 冷陰極燈管之混光效果代d之螢Μ及擴放層，以提昇 發光i:;::再：目的是提供-種異於傳統螢光粉之光致 中，以提供 器、㈣裝結構’主要係由承載 立中，^日0片、膠體與光致發光擴散材料所組成。 線;膠體是;配置於承載器上’以發射出-光 料適上述膠體中，此光致發光擴散材 射。極體晶片所發出之光線_，並使光線散 ⑧ 7 M275537 16001 -1 twf.doc/y 在本創作之較佳實施例中 ’承載器例如是一印刷電路 板:此:刷電路板上具有u容納空間，適於配置發光 一極體曰曰片，且發光二極體晶片係與印刷電路板電性連接。 加 1作之較佳貫施例中，承載器例如是一封裝腳 木毛光—極體晶片係藉由二焊線而與封裝腳架電性連 接此外’發光二極體晶片例如是一藍光發光二極體晶片。 "3在本創作之較佳實施例中，膠體包含有内層膠體與封 ^膠體二其中’内層膠體係包覆發光二極體晶片，且其内 ^具有光致發光擴散材料分佈於其巾，而封裝膠體則包覆 住内層膠體與部分的承載器。 在本創作之較佳實施例中，光致發光擴散材料之分子 式 為Regarding the package structure and offering of the above-mentioned light-emitting diode, the reviewing committee may refer to the explanation of US Patent No. 925 ^ == Patent No. 383 · for further explanation. ^ Republic of China [New Content] "Kejinshi = Ϊ Yes In order to provide a light-emitting diode package structure, the light-emitting diode package structure has a mixed light effect. Another purpose of the umbrella # πι is to provide a cold-cathode lamp tube, which uses the mixed-light effect of the cold-cathode lamp tube to replace fluorescein and d. Expanding the layer to enhance the luminescence i:; ::: Re: The purpose is to provide-a kind of photoluminescence different from traditional phosphors, with the provider and outfit structure 'mainly by the carrier Lizhong, ^ 0 0 pieces, Colloid and photoluminescence diffusion material. Line; colloid is; placed on the carrier 'to emit-light material fits in the above colloid, this photoluminescence diffusion material emits. The light emitted by the polar body wafer_, and Disperse the light 7 M275537 16001 -1 twf.doc / y In the preferred embodiment of this creation, the 'bearer is, for example, a printed circuit board: this: the brush circuit board has a u-receiving space, which is suitable for configuring a light-emitting pole Body and film, and light emitting diode wafer system and printing The circuit board is electrically connected. In a preferred embodiment with the addition of 1, the carrier is, for example, a package foot wood wool light-polar body chip which is electrically connected to the package foot frame through two bonding wires. In addition, the light emitting diode The body wafer is, for example, a blue light-emitting diode wafer. &Quot; 3 In a preferred embodiment of the present invention, the colloid includes an inner layer colloid and a sealing colloid, wherein the 'inner layer system covers the light-emitting diode wafer, and its The photoluminescence diffusing material is distributed inside the towel, and the encapsulating gel covers the inner colloid and a part of the carrier. In a preferred embodiment of the present invention, the molecular formula of the photoluminescence diffusing material is
WmMon(Y?Ce5Tb?Gd?Sc)3+l+u(Al5GaJU H3U+3V+3㈣n : Ce3'Tb3+，其中 〇<t<5 ; 〇<m、n、u、v<15 〇 而 上述之WmMon (Y? Ce5Tb? Gd? Sc) 3 + l + u (Al5GaJU H3U + 3V + 3㈣n: Ce3'Tb3 +, where 〇 < t <5; 〇 < m, n, u, v < 15 〇 and the above Of
WmM〇n(Y，Ce，TbGd，SeWu(A1，Ga，Tlin^^ H3u+3V+3m+3n : Ce3+，Tb3+，其中 〇<t<5 ; 〇<m、n、u、V<15 可 為^此〇物或是燒結物。此外，光致發光擴散材料之最大 粒徑係小於30微米，且其平均粒徑小於1〇微米。 ^在本創作之較佳實施例中，上述之光致發光擴散材料 係包括一螢光材料與一擴散材料，而此螢光材料之粒徑係 小於25微米。 广本創作另提出一種冷陰極燈管，其包括有：燈管、放 電氣體、光致發光擴散材料及電極組。其中，放電氣體係 M275537 16001-ltwf.doc/y 分佈於燈管中；光致發光擴散材料係配置於燈管之管壁 上；而此電極组則是包含有配置於燈管二端之一陽極與— 陰極。 在本創作之較佳實施例中，此光致發光擴散材料之分 + 式為WmM〇n (Y, Ce, TbGd, SeWu (A1, Ga, Tlin ^^ H3u + 3V + 3m + 3n: Ce3 +, Tb3 +, where 〇 < t <5; 〇 < m, n, u, V < 15 may be a sintered product or a sintered product. In addition, the maximum particle size of the photoluminescent diffusion material is less than 30 microns, and its average particle size is less than 10 microns. ^ In a preferred embodiment of the present invention, the above The photoluminescence diffusing material includes a fluorescent material and a diffusing material, and the particle size of the fluorescent material is less than 25 microns. Guang Ben created another cold cathode lamp tube, which includes: a lamp tube and a discharge gas , Photoluminescence diffusion material and electrode group. Among them, the discharge gas system M275537 16001-ltwf.doc / y is distributed in the lamp tube; the photoluminescence diffusion material is arranged on the tube wall of the lamp tube; and this electrode group is It includes one anode and-cathode arranged at the two ends of the lamp tube. In the preferred embodiment of this creation, the fraction of the photoluminescence diffusion material + is:
WmMon(Y?Ce?Tb?Gd?Sc)3WAlGaJlJn3)5W〇,S,Se)12^ i+3u+3v+3m+3n · Ce3 +，Tb3+，其中 〇<t<5 ; 0<m、η、U、v<15 ， ❿上 述 之WmMon (Y? Ce? Tb? Gd? Sc) 3WAlGaJlJn3) 5W〇, S, Se) 12 ^ i + 3u + 3v + 3m + 3n · Ce3 +, Tb3 +, where 〇 < t <5; 0 < m, η, U, v < 15, ❿
WmM〇n(Y，Ce，Tb，Gd，SeWu(Al，Ga，TUn，B)5+u+^ 卜3u+3v+3m+3n : Ce3+，Tb3+，其中 〇<t<5 ; 〇<ιη、η、u、V<15 可 為一混合物或是燒結物。此外，此光致發光擴散材料係包 括螢光材料以及與螢光材料附著之擴散材料。 >由於本創作係利用光致發光擴散材料取代習知技術 中的或光層與擴散層，使其兼具光轉換及混光的效果。如 ^來’不僅可避免習知技術中其螢光層與擴散層之材 _ 貝、，徑大小、粒子分佈密度…等因素需相互匹配所造成 的問題，且亦可有效簡化發光二極體封裝結構之製程、降 低八‘作成本，並可產生較佳的混光效果。 為讓本創作之上述和其他目的、特徵和優點能更明顯 廑，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖3繪示為本創作第一實施例之發光二極體封裝結構 M275537 16001-ltwf.doc/yWmM〇n (Y, Ce, Tb, Gd, SeWu (Al, Ga, TUn, B) 5 + u + ^ 3u + 3v + 3m + 3n: Ce3 +, Tb3 +, where 〇 < t <5; 〇 < ιη, η, u, V < 15 can be a mixture or a sintered material. In addition, the photoluminescence diffusion material includes a fluorescent material and a diffusion material attached to the fluorescent material. > Since the creation uses photoinduced Luminous diffusing material replaces the conventional technology or the light layer and the diffusion layer, so that it has both the effect of light conversion and light mixing. For example, ^ lai 'can not only avoid the material of the fluorescent layer and the diffusion layer in the conventional technology_ 贝, Diameter, particle distribution density, and other factors need to match the problems caused by each other, and can also effectively simplify the manufacturing process of the light-emitting diode packaging structure, reduce the cost of eight, and can produce better light mixing effect. To make the above and other purposes, features, and advantages of this creation more obvious, the preferred embodiments are described below in conjunction with the attached drawings, and are described in detail below. [Embodiment] FIG. 3 shows the first of this creation. Light emitting diode package structure of the embodiment M275537 16001-ltwf.doc / y
的示意圖。請參照圖3，此第一實施例之發光二極體封裝 結構主要包含有承載器2⑻、發光二極體晶片210、膠體 220與光致發光擴散材料23〇。其中，發光二極體晶片21〇 是配置於承載器200上，以發射出一光線；此膠體220係 包覆住大部份的承載器2〇〇及其上之發光二極體晶片 210;而光致發光擴散材料23()則是均勻地分佈於膠體22〇 中’此光致發光擴散材料230適於被發光二極體晶片210 所發出之光線激發，且會使光線散射。 在第一實施例中，承載器200例如是圖3中所示之封 裝接腳200’，此封裝接腳2〇〇，係由一第一接腳2〇2以及第 一接腳204所構成。第一接腳2〇2之頂端例如具有一承載 f 206,且承載座206中具有一晶片容納空間2〇8，此晶片 谷納空間208例如料一凹杯型態，其適於配置發光二極 體晶片210。 發光二極體晶片210係配置於上述承載座2〇6之晶片 容納空間208内，其適於發射出一光線，在第一實施例中， 此發光二極體晶片21〇例如為藍光發光二極體晶片。此發 光-極體晶片210之表面具有電極212，通常為陰極、陽 =兩電極’此電極212例如係分別藉由焊線谢a及焊線 2〇9b而與弟一接腳202及第二接腳2〇4電性連接。 220係用以將部份的封裝接腳2〇〇,、發光二極 =:片^、=緣光細树⑽、焊線·與焊線通 IL侍弟接腳202與第二接腳2〇4由膠體2如之 底。H申出，且其可分為一内層膠體222與-封裝膠體224。 M275537 16001-ltwf.doc/y 其中，内層膠體222係包覆發光二極體晶片21〇，而 膠體224曰貝^包覆住内層膠體從與部分的承載器細。 值得注意的是，本創作係將光致發光擴散材料230均 勻地分佈_層膠體222中，此光致發光擴散材料23〇同 時兼具習知技術中螢光層與擴散層的功能，其不僅可被發 光二極體j片210所發出的光線激發，且亦可使光線產^ 政射，使仟發光二極體晶片21〇本身所發出的光線與光致 #發光擴散材料23〇受激發而產生的光線產生更均勾的混 合，進而達到更好的混光效果。而光致發光擴散材料23〇 並不限於只能應用在第一實施例所述之内層膠體222中， 此光致發光擴散材料230亦可應用於其他以螢光體激發方 式產生光線的的封裝結構或是燈具中，同樣可產生良^的 混光效果。 圖4 A及4 B繪示為光致發光擴散材料2 3 〇其單一顆粒 之示意圖，請參照圖4A及4B，單一顆粒的光致發光擴散 材料230係由螢光材料230a及附著於螢光材料230a之擴 散材料230b所組成，此螢光材料230a係分佈於擴散材料 230b中。當發光二極體晶片21〇所發出的光線入射於光致 發光擴散材料230時，其内部的螢光材料230a會被激發， 而產生另一種波長的光線，且擴散材料230b會將光線散射 到其他的光致發光擴散材料230上，使發光二極體封裝結 構產生更好的混光效果。此外，圖4B中螢光材料230a外 圍所具有的過渡相230c僅是因光致發光擴散材料230製作 條件的不同所產生 M275537 16001-ltwf.doc/y 在此第一實施例中，光致發光擴散材料230之分子式 例 如 是Schematic. Referring to FIG. 3, the light emitting diode package structure of the first embodiment mainly includes a carrier 2⑻, a light emitting diode wafer 210, a colloid 220, and a photoluminescent diffusion material 23. Among them, the light-emitting diode wafer 21 is configured on the carrier 200 to emit a light; this colloid 220 is to cover most of the carrier 200 and the light-emitting diode wafer 210 thereon; The photoluminescence diffusing material 23 () is evenly distributed in the colloid 22o. This photoluminescence diffusing material 230 is suitable for being excited by the light emitted from the light emitting diode wafer 210 and will scatter the light. In the first embodiment, the carrier 200 is, for example, the package pin 200 ′ shown in FIG. 3. The package pin 200 is composed of a first pin 200 and a first pin 204. . The top of the first pin 202 has, for example, a bearing f 206, and the bearing seat 206 has a wafer accommodating space 208. The wafer valley space 208 is, for example, a concave cup type, which is suitable for disposing the light emitting diode 206.极 体 片 210。 Polar body wafer 210. The light emitting diode wafer 210 is disposed in the wafer accommodating space 208 of the above-mentioned carrier 206, and is suitable for emitting a light. In the first embodiment, the light emitting diode wafer 21 is, for example, a blue light emitting diode. Polar body wafer. The surface of the light-emitting body wafer 210 has an electrode 212, which is usually a cathode and a positive electrode. The electrode 212 is, for example, a bonding wire 202 and a second lead 202 by a bonding wire Xa and a bonding wire 209b. Pin 204 is electrically connected. 220 series is used to connect part of the package pins 2000, the light emitting diode =: slice ^, = marginal light thin tree ⑽, bonding wire, and the bonding wire through the IL waiter pin 202 and the second pin 2 〇4 by the colloid 2 as the bottom. H is applied, and it can be divided into an inner colloid 222 and an encapsulating colloid 224. M275537 16001-ltwf.doc / y Among them, the inner colloid 222 is a light-emitting diode wafer 21, and the colloid 224 is a thin layer that covers the inner colloid and a part of the carrier. It is worth noting that this creation is to uniformly distribute the photoluminescent diffusion material 230 in the layer colloid 222. This photoluminescent diffusion material 23 also has the functions of the fluorescent layer and the diffusion layer in the conventional technology. It can be excited by the light emitted by the light emitting diode j sheet 210, and can also cause the light to emit light, so that the light emitted by the light emitting diode wafer 21 itself and the photoinduced #luminescent diffusion material 23 can be excited. The generated light produces a more even mixing, thereby achieving a better light mixing effect. The photoluminescence diffusing material 23 is not limited to the inner colloid 222 described in the first embodiment, and the photoluminescence diffusing material 230 can also be applied to other packages that generate light by means of phosphor excitation. In the structure or the lamp, a good light mixing effect can also be produced. 4A and 4B are schematic diagrams of a single particle of the photoluminescent diffusion material 2 3 0. Please refer to FIGS. 4A and 4B. The single particle photoluminescent diffusion material 230 is composed of a fluorescent material 230a and attached to fluorescent light. The material 230a is composed of a diffusion material 230b, and the fluorescent material 230a is distributed in the diffusion material 230b. When the light emitted by the light-emitting diode wafer 21 is incident on the photoluminescence diffusion material 230, the fluorescent material 230a inside it will be excited, and light of another wavelength will be generated, and the diffusion material 230b will scatter the light to The other photoluminescence diffusing material 230 makes the light emitting diode package structure produce better light mixing effect. In addition, the transition phase 230c in the periphery of the fluorescent material 230a in FIG. 4B is only due to the different manufacturing conditions of the photoluminescent diffusion material 230. M275537 16001-ltwf.doc / y In this first embodiment, photoluminescence The molecular formula of the diffusion material 230 is, for example,
WmMon(Y，Ce，Tb，Gd，Sc)3+t+u(Al，Ga，Tl，In，B)5+u+2v(〇，s，Se)12+2 t+3u+3v+3m+3n · Ce ，Tb ’其中 0<t<5，0<Π1、η、u、v< 15 。 請參照圖4A，光致發光擴散材料230之最大粒徑Dmax係 小於30微米，而其平均粒徑小於1〇微米，且其中之登光 材料230a的粒徑Di係小於25微米，以達到較佳的混光效 果。 此外，WmMon (Y, Ce, Tb, Gd, Sc) 3 + t + u (Al, Ga, Tl, In, B) 5 + u + 2v (〇, s, Se) 12 + 2 t + 3u + 3v + 3m + 3n · Ce, Tb 'where 0 < t < 5, 0 < Π1, η, u, v < 15. Please refer to FIG. 4A. The maximum particle diameter Dmax of the photoluminescence diffusing material 230 is less than 30 micrometers, and its average particle diameter is less than 10 micrometers, and the particle size Di of the photoluminescence material 230a is less than 25 micrometers, in order to achieve Good blending effect. In addition,
WmM〇n(Y，Ce，Tb，Gd，SC)3+t+u(Al，Ga，Tl，In，B)5+u+2v(〇，S，Se)12+2 t+3u+3V+3m+3n : Ce3+，Tb3+，其中 〇<t<5 ; 0<m、η、u、v<15 ， 可為混合物或是燒結物的型式。 圖5A及5B繪示為另一種光致發光擴散材料230其單 一顆粒之示意圖。請參考圖5A及5B，單一顆粒的光致發 光擴散材料230同樣係由螢光材料230a及擴散材料230b 所組成，其不同之處在於··此光致發光擴散材料23()之擴 散材料230b係分佈於螢光材料230a中，然而，此材料亦 可達到相同的混光效果。 然而，熟習該項技術者應知，本創作中所揭露之光致 發光擴散材料230並不限定於使用在上述之封裝結構中， 本創作可應用於習知技術中任何以螢光體激發方式產生光 線的的封裝結構，只是需將其原有的螢光層替換為内層膠 體222及分佈於其間的光致發光擴散材料23()即可。以下， 即針對本創作應用於不同封裝型態上之實施方式進行說 明0 12 M275537 16001-ltwf.d〇c/y ^二施例 封壯ΞΙ與圖7料為依照本創作第二實施例發光二極體 上H冓的^意圖。請參照圖6，第二實施例之結構大致 二二弟貝施例中相類似’其不同之處在於：第二實施 采用的承載$ 300為-印刷電路板·,,此第二實施 例之封裝結構即架構於此印刷電路板3〇〇,上。 、 第，實施例之發光二極體封裝結構主要係由印刷電 路板300、發光二極體晶片31〇、膠體32〇與光致發光擴 散材料330所組成。同樣地，膠體32〇包括有内層膠體322 與封裝膠體324，内層膠體322是覆蓋於發光二極體晶片 310之上，而封裝膠體324則是用以包覆部份的印刷電路 板300、發光一極體晶片、内層膠體322、光致發光 擴散材料330舆焊線314 ;或無内層膠體322，則由封裝膠 體324直接包含光致發光擴散材料33()形成。 發光一極體晶片310係配置於印刷電路板3〇〇,上，且 印刷電路板300’與發光二極體晶片31〇之表面分別具有接 點302與電極312，此電極312係藉由二焊線314而連接 於印刷電路板300’表面之接點302，使印刷電路板300,與 發光二極體晶片310構成電性連接。 内層膠體322係配置於印刷電路板300’之表面，且覆 蓋於上述之發光二極體晶片310,此光致發光擴散材料330 係均勻地分佈於内層膠體322中，且係由螢光材料及附著 於螢光材料之擴散材料所組成。當發光二極體晶片310所 發出的光線入射於光致發光擴散材料330時，其内部的螢 M275537 16001-ltwf.doc/y 光材料會被激發，而產生另一種波長的光線，且擴散材料 會將光線散射到其他的光致發光擴散材料330上，使發光 二極體封裝結構產生更好的混光效果。在第二實施例中， 光致發光擴散材料 330 之分子式例如是WmM〇n (Y, Ce, Tb, Gd, SC) 3 + t + u (Al, Ga, Tl, In, B) 5 + u + 2v (〇, S, Se) 12 + 2 t + 3u + 3V + 3m + 3n: Ce3 +, Tb3 +, in which 0 < t <5; 0 < m, η, u, v < 15, may be a mixture or a sintered product type. 5A and 5B are schematic diagrams of a single particle of another photoluminescent diffusion material 230. FIG. Please refer to FIGS. 5A and 5B. The single-particle photoluminescent diffusion material 230 is also composed of a fluorescent material 230a and a diffusion material 230b. The difference is that the photoluminescent diffusion material 23 () is a diffusion material 230b. It is distributed in the fluorescent material 230a. However, this material can also achieve the same light mixing effect. However, those familiar with this technology should know that the photoluminescence diffusion material 230 disclosed in this creation is not limited to use in the above-mentioned packaging structure. This creation can be applied to any phosphor excitation method in the conventional technology The packaging structure that generates light only needs to replace its original fluorescent layer with an inner colloid 222 and a photoluminescence diffusion material 23 () distributed therebetween. The following is a description of the implementation of this creation applied to different packaging types. 0 12 M275537 16001-ltwf.d0c / y ^ Two examples Feng Zhuang 1 and Figure 7 are illuminated according to the second embodiment of this creation The intention of H 冓 on the diode. Please refer to FIG. 6. The structure of the second embodiment is roughly similar to that of the second embodiment. The difference is that the load bearing used in the second embodiment is $ 300, which is the printed circuit board. The package structure is structured on this printed circuit board 300 ,. First, the light emitting diode packaging structure of the embodiment is mainly composed of a printed circuit board 300, a light emitting diode wafer 31, a colloid 32, and a photoluminescent diffusion material 330. Similarly, the gel 32 includes an inner gel 322 and an encapsulating gel 324. The inner gel 322 covers the light-emitting diode chip 310, and the encapsulating gel 324 is used to cover a part of the printed circuit board 300 and light. A polar wafer, an inner colloid 322, a photoluminescent diffusion material 330 and a bonding wire 314; or an inner colloid 322, which is formed by the encapsulating colloid 324 directly containing the photoluminescent diffusion material 33 (). The light-emitting diode wafer 310 is disposed on the printed circuit board 300, and the surfaces of the printed circuit board 300 'and the light-emitting diode wafer 31 have contacts 302 and electrodes 312, respectively. The bonding wires 314 are connected to the contacts 302 on the surface of the printed circuit board 300 ′, so that the printed circuit board 300 and the light emitting diode chip 310 are electrically connected. The inner colloid 322 is disposed on the surface of the printed circuit board 300 'and covers the above-mentioned light emitting diode wafer 310. The photoluminescent diffusion material 330 is uniformly distributed in the inner colloid 322, and is composed of a fluorescent material and Composed of a diffusing material attached to a fluorescent material. When the light emitted by the light-emitting diode wafer 310 is incident on the photoluminescence diffusion material 330, the fluorescent material M275537 16001-ltwf.doc / y inside the light-emitting material is excited to generate light of another wavelength, and the diffusion material The light will be scattered to other photoluminescence diffusing materials 330, so that the light emitting diode package structure has a better light mixing effect. In the second embodiment, the molecular formula of the photoluminescent diffusion material 330 is, for example,
WmMon(Y9Ce5Tb,Gd5Sc)3+t+u(Al5Ga9Tl5In5B)5+u+2v(〇5S5Se)}2+2 t+3u+3v+3m+3n : Ce3+，Tb3+ ’ 其中 0<t<5 ; 〇<m、η、u、v<15 。 而光致發光擴散材料330之最大粒徑同樣係小於3〇微米， ⑩ 而其平均粒徑小於1〇微米，且其中之螢光材料的粒徑係小 於25微米，以達到較佳的混光效果。此外，WmMon (Y9Ce5Tb, Gd5Sc) 3 + t + u (Al5Ga9Tl5In5B) 5 + u + 2v (〇5S5Se)} 2 + 2 t + 3u + 3v + 3m + 3n: Ce3 +, Tb3 + 'where 0 < t <5; 〇 & lt m, η, u, v < 15. The maximum particle diameter of the photoluminescence diffusing material 330 is also less than 30 microns, and the average particle diameter is less than 10 microns, and the particle size of the fluorescent material is less than 25 microns to achieve better light mixing. effect. In addition,
WmMon(Y，Ce，Tb，Gd，SC)3+t+u(Al，Ga，Tl，In，B)5+u+2v(〇，S，Se)i2+2 t+3u+3v+3m+3n : Ce3+，Tb3+，可為混合物或是燒結物的型式。 接著請參照圖7，本實施例中為提昇發光二極體封裝 結構的聚光效果，故於印刷電路板3〇〇,中設置一晶片容納 空間304，此晶片容納空間304例如係為一凹杯型態，其 適於配置發光二極體晶片310。此外，可於晶片容納空間 304的側壁上選擇性的鍍製一些反射膜層，以增加光&反 _ 射的效果。 ^二實施例 在本創作之第一實施例與第二實施例中，光致發光擴 散材料係應用於發光二極體之封裝結構中，然而，^光致 發光擴散材料亦可應用於一般的冷陰極燈管中，同樣可以 達到較佳的混光效果。 ’ 圖8繪示為依照本創作第三實施例冷陰極燈管的示意 圖。請參考圖8，此冷陰極燈管400係由燈管41〇、放電氣 ⑧ 14 M275537 16001-ltwf.doc/y 體（圖中未示）、光致發光擴散材料42〇及一電極組43〇所 構成。其中，燈管110内係注入有適當的放電氣體，例如 水备氣與惰性氣體；此光致發光擴散材料420係塗佈於燈 官410之内壁上；而電極組430則包括有配置於燈管41〇 兩立而之％極與陰極，此電極組430係與一電源（圖中未示) 電性連接。 當電極組430電性連接至一偏壓時，燈管41〇内之放 # 電氣體（如汞蒸氣與惰性氣體）即會被激發至激態（excited state)，隨即再回到基態(steady state)，而在放電氣體回到 基悲之同時，會以放出紫外光的形式釋放出能量。藉由上 述機制，當放電氣體所放出之紫外光打在燈管41〇之管壁 上的光致發光擴散材料420時，由於光致發光擴散材料420 中包含W螢光材料及附著於此螢光材料之擴散材料，因 此，不僅可發出可見光，達到發光目的，亦可藉由擴散材 料使光線散射，達到更好的混光效果。而此光致發光擴散 材料420之分子式及其粒徑大小之限制已於第一實施例與 第二實施例中說明，所以，在此不再多作贅述。 綜上所述，本創作之發光二極體封裝結構主要是藉由 上述之光致發光擴散材料取代習知技術中的螢光層及擴散 層，此光致發光擴散材料之分子式例如是WmMon (Y, Ce, Tb, Gd, SC) 3 + t + u (Al, Ga, Tl, In, B) 5 + u + 2v (〇, S, Se) i2 + 2 t + 3u + 3v + 3m + 3n: Ce3 +, Tb3 +, which can be a mixture or a sintered product. Please refer to FIG. 7. In this embodiment, in order to improve the light-concentrating effect of the light-emitting diode package structure, a printed circuit board 300 is provided with a wafer accommodating space 304. The wafer accommodating space 304 is, for example, a concave shape. The cup type is suitable for disposing the light emitting diode wafer 310. In addition, some reflective film layers can be selectively plated on the sidewall of the wafer receiving space 304 to increase the effect of light & reflection. ^ Second Embodiment In the first and second embodiments of this creation, the photoluminescent diffusion material is applied to the packaging structure of the light emitting diode. However, the photoluminescent diffusion material can also be applied to general In cold cathode lamp tubes, a better light mixing effect can also be achieved. Fig. 8 is a schematic diagram of a cold cathode lamp according to a third embodiment of the present invention. Please refer to FIG. 8, the cold cathode lamp 400 is composed of a lamp tube 41, a discharge gas 14 M275537 16001-ltwf.doc / y body (not shown), a photoluminescent diffusion material 42 and an electrode group 43 〇constituted. The lamp tube 110 is filled with a suitable discharge gas, such as water gas and inert gas; the photoluminescent diffusion material 420 is coated on the inner wall of the lamp officer 410; and the electrode group 430 includes a lamp The tube 41 has two% poles and a cathode, and this electrode group 430 is electrically connected to a power source (not shown). When the electrode group 430 is electrically connected to a bias voltage, the discharge gas (such as mercury vapor and inert gas) in the lamp tube 40 will be excited to an excited state, and then return to the ground state (steady). state), and when the discharge gas returns to the base, it will release energy in the form of emitting ultraviolet light. By the above mechanism, when the ultraviolet light emitted by the discharge gas hits the photoluminescent diffusion material 420 on the tube wall of the lamp tube 41, the photoluminescent diffusion material 420 contains a W fluorescent material and is attached to the fluorescent material. Diffusion materials of light materials, therefore, not only can emit visible light to achieve luminous purposes, but also diffuse light through diffusion materials to achieve better light mixing effects. The limitation of the molecular formula and the particle size of the photoluminescence diffusing material 420 has been described in the first embodiment and the second embodiment, so it will not be repeated here. In summary, the light-emitting diode packaging structure of this creation is mainly to replace the fluorescent layer and the diffusion layer in the conventional technology with the above-mentioned photoluminescent diffusion material. The molecular formula of the photoluminescent diffusion material is, for example,
WmMon(Y5Ce5Tb5Gd5Sc)3WAl?GaJlJn3)5+u+2v(〇,S?Se)12+2 t+3㈣v+3m+3n : Ce3+，Tb3+，其中 〇<t<5 ; 〇<m、n、u、V<15。 此光致發光擴散材料不僅可被上述發光二極體晶片所發出 的光線激發，且亦可使光線產生散射，如此一來，即可使 ⑧ 15 M275537 16001-ltwf.d〇c/y 得發光 . u瓶日日乃枣身所發出的光線與光致於丄 受激發而產生的光線產生更均勾的混人^擴散軸 光效果。 〇 達到更好的混 雖然本創作已以較佳實施例揭露 限定本創作，任何熟習此技藝者，在不脫離;;=非用以 和範圍内，當可作些許之更動與潤飾，因此本創:之精神 範圍當視後社巾請專難_界定者鱗抑作之保護 【圖式簡單說明】 圖1 會示為習知白光發光二極體之封裝結構示意圖。 圖2綠示為習知白光發光二極體之封裝結構示意圖。 3繪示為本創作第一實施例之發光二極體封裝結構 的示意圖。 圖4A及圖4B繪示為光致發光擴散材料的示意圖。 圖5A及圖5B繪示另一種光致發光擴散材料的示意 % 圖6與圖7繪示為依照本創作第二實施例發光二極體 封骏結構的示意圖。 圖8 %示為依照本創作第三實施例冷陰極燈管的示意 圖。 【主要元件符號說明】 1GG :封裝接腳 102 :藍光發光二極體晶片 104 =膠體 106 :封裝膠體 ⑧ 16 M275537 16001-ltwf.doc/y 108 :焊線 110 :擴散層 200 :承載器 200’ ：封裝接腳 202 :第一接腳 204 :第二接腳 206 :承載座 208 :晶片容納空間 209a ··焊線 209b ··焊線 210 :發光二極體晶片 212 :電極 220 :膠體 222 :内層膠體 224 :封裝膠體 230 :光致發光擴散材料 230a :螢光材料 230b :擴散材料 300 ··承載器 300’ ：印刷電路板 302 :接點 304 :晶片容納空間 310 :發光二極體晶片 312 :電極 17 M275537 16001-ltwf.doc/y 314 :焊線 320 :膠體 322 :内層膠體 324 :封裝膠體 330 :光致發光擴散材料 400 :冷陰極燈管 410 :燈管 420 :光致發光擴散材料 430 :電極組WmMon (Y5Ce5Tb5Gd5Sc) 3WAl? GaJlJn3) 5 + u + 2v (〇, S? Se) 12 + 2 t + 3㈣v + 3m + 3n: Ce3 +, Tb3 +, where 〇 < t <5; 〇 < m, n, u, V < 15. This photoluminescence diffusion material can not only be excited by the light emitted by the above-mentioned light emitting diode wafer, but also cause light to be scattered. In this way, ⑧ 15 M275537 16001-ltwf.d〇c / y can emit light . The light emitted by the u bottle Ri Ri Nai Jujube body and the light generated by the light-induced excitation of the urn produces a more evenly mixed ^ diffusion axis light effect. 〇 Achieve a better mix Although this creation has been disclosed to limit the creation with a preferred embodiment, anyone who is familiar with this skill will not leave it;; = not within the scope and scope, there can be some changes and retouching, so this Chuang: The spiritual scope should be regarded as difficult for the society. _ Defined by the protection of the scale [Simplified illustration] Figure 1 will be a schematic diagram of the packaging structure of a conventional white light emitting diode. FIG. 2 is a schematic diagram showing a package structure of a conventional white light emitting diode. 3 shows a schematic diagram of the light emitting diode packaging structure of the first embodiment of the creation. 4A and 4B are schematic diagrams of a photoluminescent diffusion material. FIG. 5A and FIG. 5B are schematic diagrams of another photoluminescence diffusing material. FIG. 6 and FIG. 7 are schematic diagrams of the light-emitting diode sealing structure according to the second embodiment of the present invention. Fig. 8% shows a schematic diagram of a cold cathode lamp according to a third embodiment of the present invention. [Description of main component symbols] 1GG: package pin 102: blue light emitting diode wafer 104 = colloid 106: package colloid⑧ 16 M275537 16001-ltwf.doc / y 108: bonding wire 110: diffusion layer 200: carrier 200 ' : Package pin 202: first pin 204: second pin 206: carrier 208: chip receiving space 209a ·· bonding wire 209b ·· bonding wire 210: light emitting diode wafer 212: electrode 220: gel 222: Inner layer colloid 224: Encapsulating colloid 230: Photoluminescent diffusion material 230a: Fluorescent material 230b: Diffusion material 300 ·· Carrier 300 ': Printed circuit board 302: Contact 304: Wafer receiving space 310: Light-emitting diode wafer 312 : Electrode 17 M275537 16001-ltwf.doc / y 314: Welding wire 320: Colloid 322: Inner colloid 324: Encapsulating colloid 330: Photoluminescent diffusion material 400: Cold cathode tube 410: Lamp tube 420: Photoluminescent diffusion material 430: electrode group
Dmax ••最大粒徑 Di :粒徑Dmax •• Maximum particle size Di: particle size
18 ⑧18 ⑧
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI384283B (en) * | 2007-10-04 | 2013-02-01 | Au Optronics Corp | Backlight module with light emitting diode |
| TWI614452B (en) * | 2011-10-13 | 2018-02-11 | 英特曼帝克司公司 | Photoluminescence wavelength conversion components for solid-state light emitting devices and lamps |
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2005
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI384283B (en) * | 2007-10-04 | 2013-02-01 | Au Optronics Corp | Backlight module with light emitting diode |
| TWI614452B (en) * | 2011-10-13 | 2018-02-11 | 英特曼帝克司公司 | Photoluminescence wavelength conversion components for solid-state light emitting devices and lamps |
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