TWM259319U

TWM259319U - Packaging structure of light emitting diode (LED)

Info

Publication number: TWM259319U
Application number: TW93207198U
Authority: TW
Inventors: Mu-Ren Lai; Yue-Shiun Yang; Shiang-Jiun Hung
Original assignee: Super Nova Optoelectronics Cor
Priority date: 2004-05-07
Filing date: 2004-05-07
Publication date: 2005-03-11

Description

M259319 四、創作說明α) 【新型所屬之技術領域】本創作係關於一種發光二極體封裝結構，特別是一種防止亮度衰減之發光二極體封裝結構。【先前技術】發光二極體（Light Emission Diode, LED)的發光原理是利用半導體固有特性，其元件具有兩N、P電極端，在兩端間施加電壓，通入極小的電流便可發光；由於不同於以往的白熾燈管的放電及發熱發光原理，發光二極體被稱M259319 IV. Creation Description α) [Technical Field to which the New Type belongs] This creation is about a light emitting diode packaging structure, especially a light emitting diode packaging structure that prevents brightness degradation. [Prior technology] The light emitting principle of Light Emission Diode (LED) is based on the inherent characteristics of semiconductors. Its element has two N and P electrode terminals, a voltage is applied between the two ends, and a small current can be used to emit light; Due to the different discharge and heat emission principles of the traditional incandescent tube, light-emitting diodes are called

為冷光源（cold 1 ight)。由於發光二極體具有高耐久性、哥命長、輕巧、耗電量低且不含水銀等有害物質，因此照明設備業者對發光二極體都寄予極大厚望。就國内廠商 7技術方面，國内上、中游廠商生產藍光發光二極體主要疋用在手機上，所用的基板主要以藍寶石為主；下游封裝技術方面，技術難度主要在如何耐高電流、具高散熱性或減少晶粒亮度的衰減，另外，現在產品走向均往輕薄短小來發展，因此縮小封裝的體積之SMD的封裝技術，亦是封裝的重點。Cold light source (cold 1 ight). Since the light emitting diode has high durability, long life, light weight, low power consumption, and does not contain harmful substances such as mercury, the lighting equipment manufacturers place great expectations on the light emitting diode. In terms of domestic manufacturers' 7 technology, domestic upper and middle-stream manufacturers produce blue light-emitting diodes mainly for mobile phones, and the substrates used are mainly sapphire. In terms of downstream packaging technology, the technical difficulty is mainly how to withstand high current, It has high heat dissipation or reduces the attenuation of the brightness of the die. In addition, the products are now being developed to be thin and short. Therefore, the SMD packaging technology that reduces the volume of the package is also the focus of packaging.

做為發光二極體光源之半導體材料發展較成熟的有：使用在紅、黃、綠可見光波段顯示器之磷化鎵及砷化鎵系列材料，以及氣化鎵（GaN)系列材料。其中，氮化鎵（GaN )糸列材料是製造紅色到紫外光範圍之UD或雷射二極體所需的最主要化合物半導體成分。例如氮化鎵（GaN)發光二極體之構造是p、N電極端The more mature semiconductor materials as light-emitting diode light sources include: gallium phosphide and gallium arsenide series materials used in red, yellow, and green visible light band displays, and gallium nitride (GaN) series materials. Among them, gallium nitride (GaN) queue materials are the most important compound semiconductor components required to make UD or laser diodes in the red to ultraviolet range. For example, the structure of gallium nitride (GaN) light-emitting diode is p, N electrode terminal

M259319M259319

四、創作說明（2) 係位於同侧橫向，且採用藍寶石（sapph i re)來當作基板 ’當該氮化鎵（GaN)藍色發光二極體晶片加上釔銘石二石 (Yttrium、Aluminum、Garnet，YAG)黃光螢光粉，利用藍光激發該YAG黃光螢光粉產生黃光，同時也有部分藍光放射出來’备頁混合之後可形成白光；此白光發光二極體且有壽命長、省電、低壓驅動、安全又具環保效果等優點了已被科學家視為二十一世紀的照明光源。由於作為基板之藍寶石材質係為絕緣體，使白光發光 =極體1 a無法有效地抵抗靜電，極易造成局部破損^擊4. Description of creation (2) It is located on the same side and uses sapphire as the substrate. 'When the GaN blue light-emitting diode wafer is added with yttrium (Aluminum, Garnet, YAG) yellow fluorescent powder, the blue light is used to excite the YAG yellow fluorescent powder to generate yellow light, and at the same time, some blue light is also emitted. 'White light can be formed after mixing the page; this white light emitting diode has a long life and saves The advantages of electricity, low voltage drive, safety and environmental protection have been regarded as lighting sources for the 21st century by scientists. Because the sapphire material used as the substrate is an insulator, it makes white light emit = polar body 1 a cannot effectively resist static electricity, and it is easy to cause local damage ^

牙’靜電放電（electrostatic discharge，ESD)之來數疋不可控制的，是一種難於重複的隨機過程；是以，請彖閱第一圖所示，係為習知發光二極體封裝結構9 a ^ 括有金屬支架9 1 a、設於該金屬支架9 1 a上之支&杯 9 2 a、以及設置於該金屬支架9 1 a之氮化鎵發光二極體晶粒1 a及靜電防護二極體晶粒2 a ;該金屬支架9 1 a係具有呈分離狀態之第一金屬支腳9 1 1 a與第二金屬支腳9 1 2 a ;該支撐杯9 2係具有分別設置於該第一金屬支腳9lla上之第一撐壁92la 、以及設置於該第一金屬支腳912a上之第二撐壁922a;氮化鎵發光一極體晶粒1 a係設置於該金屬支架9 1 a之該第二金屬支腳9 1 2 a、以及該靜電防護二極體晶粒2 a係設置於该金屬支架91a之該第一金屬支腳9iia;該氮化鎵發光二極體晶粒1 a係具有設置於該第二金屬支腳9 1 2 3上之藍寶石基板1 〇 a 、以及具有p、n電極端之半導體The number of teeth's electrostatic discharge (ESD) is uncontrollable and is a random process that is difficult to repeat. Therefore, please read the first picture, which is a conventional light emitting diode packaging structure 9 a ^ Includes metal support 9 1 a, support & cup 9 2 a provided on the metal support 9 1 a, and gallium nitride light emitting diode grain 1 a and static electricity provided on the metal support 9 1 a Protective diode crystal grains 2 a; the metal bracket 9 1 a has a first metal leg 9 1 1 a and a second metal leg 9 1 2 a in a separated state; the support cup 9 2 has separate settings A first supporting wall 92la on the first metal leg 9111 and a second supporting wall 922a provided on the first metal leg 912a; a gallium nitride light emitting polar crystal grain 1a is provided on the metal The second metal leg 9 1 2 a of the bracket 9 1 a and the electrostatic protection diode crystal grain 2 a are disposed on the first metal leg 9iia of the metal bracket 91 a; the gallium nitride light emitting diode The bulk crystal grain 1 a has a sapphire substrate 10 a provided on the second metal leg 9 1 2 3 and a semiconductor having p and n electrode terminals.

第6頁 M259319 丨、創作說明材料（未導電材料 a ° 該習第三金屬由該氮化金屬支架導線4 a 電連接至三金屬導端電連接 (3) 標號）·，該靜電防護二極體晶粒2 a係藉銀膠等 2 0 a電連接其P電極端至該第一金屬支腳9 1 知發光二極體封裝結構9 a更包括第一、第二、導線3 a 、4 a 、5 a ，該第一金屬導線3 a係鎵發光二極體晶粒1 a之該P電極端電連接至該 9 1 a之該第二金屬支腳9 1 2a 、該第二金屬係由該氮化鎵發光二極體晶粒1 a之該N電極端該靜電防護二極體晶粒2 a之該P電極端、該第線5 a係由該靜電防護二極體晶粒2 a之N電極至該金屬支架9 1 a之該第二金屬支腳9 1 2 a 該光二極第二 9 2a a内之粒1 a 藍綠光分布有光激發後形成 :波長此習知發體晶粒、第三内之封絕緣填係包括 (或紫黃色螢該黃色白光放白光）種組裝光二極體封 1 a、該靜金屬導線3 裝膠體9 3 充材9 4 a 氮化鎵系列外光），該光粉9 3 1 螢光粉9 3 射出來（或裝結構9 a更包括電防護二極體晶粒 a 、4 a 、5 a 包 a 、以及填充於該。其中，該氮化鎵材料，該氮化鎵系封裝膠體9 3 a係 a (或三波長螢光 1 a產生黃光同時紫外光激發三波長將該氮化鎵發 2 a 、該第一覆於該支撐杯金屬支架9 1 發光二極體晶列材料可發出為壞乳樹脂且粉），利用藍混合部分藍光螢光粉而產生方式係將該氮化鎵發光二極體晶粒1 a與該Page 6 M259319 丨 Creation instructional material (non-conductive material a ° The third metal is electrically connected to the tri-metal lead (3) by the nitrided metal support wire 4 a), the electrostatic protection diode The body die 2a is electrically connected to the P electrode terminal to the first metal leg 9a by silver glue or the like 20a. The light emitting diode package structure 9a further includes first, second, and lead wires 3a, 4 a, 5a, the first metal wire 3a is a gallium light-emitting diode die 1a, the P electrode terminal is electrically connected to the 91a, the second metal leg 912a, and the second metal system The N electrode terminal of the gallium nitride light emitting diode crystal grains 1 a, the P electrode terminal of the electrostatic protection diode crystal grains 2 a, and the fifth line 5 a are formed by the electrostatic protection diode crystal grains 2 a's N electrode to the metal support 9 1 a's the second metal leg 9 1 2 a the photodiode's second 9 2a a's grain 1 a blue and green light is formed after light excitation: light wavelength The third and third inner sealing and filling systems include (or purple-yellow fluorescent, yellow, white, and white light) types of assembled photodiode seals 1a, and the static metal wire 3 Body 9 3 filling material 9 4 a gallium nitride series external light), the light powder 9 3 1 fluorescent powder 9 3 is emitted (or the structure 9 a further includes electric protection diode crystal grains a, 4 a, 5 a package a, and filled therein. Among them, the gallium nitride material, the gallium nitride-based packaging colloid 9 3 a series a (or three-wavelength fluorescent 1 a generates yellow light and ultraviolet light excites three wavelengths to nitride the Gallium emission 2 a, the first covering the support cup metal support 9 1 light emitting diode crystal material can be emitted as bad latex resin and powder), using blue mixing part of blue fluorescent powder to generate the system is to nitride Gallium light emitting diode grains 1 a and the

第7頁 M259319 丨、創作說明（4) 靜電防護二極體晶粒2 a呈反向並聯，當此線路突然遇到靜電放電情況產生時，該靜電防護二極體晶粒2 a係可瞬間崩潰而提供低阻抗之路徑，俾使流向該氮化鎵發光二極體晶粒1 a之瞬間電流轉而分流至該靜電防護二極體晶粒 2 a ，該氮化鎵發光二極體晶粒1 a得以受到保護。然而，該靜電防護二極體晶粒2 a之材質係以矽 s i 1 i con)為主，理論上矽材料具有吸收特定低於1 · 1 5微米光線之物理特性，而一般可見光的波長範圍約為4 0 0奈米到7 0 0奈米、紫外光的波長範圍為1 0〜4 0 0奈米；依創作人之實做經驗，該習知發光二極體封裝結構9 a係因裝設該靜電防護二極體晶粒2 a而令亮度衰減1 5〜2 0 %之多；此外由於該靜電防護二極體晶粒2 a所設之位置關係，容易造成該靜電防護二極體晶粒2 a吸收較多藍光，致使該靜電防護二極體晶粒2 a上方與該氮化鎵發光二極體晶粒1 a上方形成程度不同之白光，造成該習知發光二極體封裝結構9 a之發光顏色不均勻。緣是，創作人有感上述缺失，乃潛心研究並配合學理之運用，提出一種設計合理且廣泛且有效改善上述缺失之本創作。 [新型内容】本創作之主要目的，在於提供一種發光二極體封裝結構，係可具有靜電防護之外，並能改善亮度，以及弭除發光顏色不均之情形。Page 7 M259319 丨 Description of creation (4) Electrostatic protection diode grain 2 a is in reverse parallel. When this line suddenly encounters an electrostatic discharge situation, the electrostatic protection diode grain 2 a can be instantaneous. Collapse and provide a low-impedance path, and the instantaneous current flowing to the gallium nitride light-emitting diode grains 1 a is diverted to the electrostatic protection diode grain 2 a, and the gallium nitride light-emitting diode crystals Grain 1 a is protected. However, the material of the electrostatic protection diode grain 2 a is mainly silicon si 1 i con). Theoretically, silicon material has the physical characteristics of absorbing specific light below 1.5 μm, and the wavelength range of visible light is generally It is about 400 nanometers to 700 nanometers, and the wavelength range of ultraviolet light is 10 to 400 nanometers. According to the actual experience of the creator, the conventional light emitting diode packaging structure 9 a The electrostatic protection diode crystal 2 a is installed, and the brightness is attenuated by 15 to 20%. In addition, due to the position relationship of the electrostatic protection diode crystal 2 a, the electrostatic protection diode is easily caused. The bulk crystal grain 2 a absorbs more blue light, which causes white light of different degrees to be formed above the electrostatic protection diode grain 2 a and above the gallium nitride light emitting diode grain 1 a, resulting in the conventional light emitting diode. The light emitting color of the package structure 9a is uneven. The reason is that the creator feels the above-mentioned shortcomings. It is an intensive study and cooperation with the application of theories to propose a rationally designed, extensive and effective improvement of the above-mentioned original creations. [New content] The main purpose of this creation is to provide a light-emitting diode packaging structure that can not only be protected against static electricity, but also improve brightness and eliminate uneven light emission.

第8頁 M259319 四、創作說明為了裝結構，、分別電晶粒與氮體晶粒與氮化鎵系支腳之上屬導線分一金屬支極體晶粒該氮化鎵該氮化鎵二極體晶光顏色均為了術内容，然而所附作加以限 (5) 達成上係包括連接至化鎵系該氮化發光二，該發別電連腳。該係呈反系發光系發光粒，發勻性。使貴請參閱圖所示制。述目的，本創作係提供 :具有呈分離狀態之第該第一與第二金屬支腳發光二鎵系發極體晶光二極接至該靜電防向並聯 -一極體二極體光二極極體光二粒係體之金屬護二設置晶粒晶粒體封晶粒；及包極體晶之封設於該金屬 p、N電極端支架之該第極體晶粒與 ’且該靜電係呈鬲度發射之光線裝結構係可一種發一及第之靜電覆該靜裝膠體支架之係藉第一'金屬該氮化防護二落差設係可避維持其本二極體対二金屬支腳防護二極體電防護二極立中，該該第二金屬 /與第二金支腳與該第鎵系發光二極體晶粒與置；是以’ 開靜電防護高亮度與發審查委員能更進—步暸解本創作特徵及技以下有關本創作之詳細說明與附圖所示，式僅提供參閱與說明用，並非用來對本創【實施方式】請參閱第二圖所示，孫糸士 h 施例係提供一種發極創作之第-實施例。本實 Ρ士播：封裝結構9，該發光二極體封展結構9係包括具有第一金篦一a 之今屦士加ηι 乐”弟一金屬支腳911、Θ12 •^金屬支架9 1 、分別雷拿刀〜电運接至讀第一與第二金屬支腳9Page 8 M259319 Fourth, the creation description In order to install the structure, the electric crystal grains and the nitrogen crystal grains and the gallium nitride-based legs are respectively divided into a metal branch crystal grain, the gallium nitride and the gallium nitride. The polar crystal light colors are all technical content, but the attached work is limited (5). The achievement of the system includes connecting to the gallium-based system, the nitrided light-emitting diode, and the electrical connector. This system is a transluminous light-emitting particle with uniformity. Please refer to the system shown in the figure. For the purpose described, this creative department provides: the first and second metal legs emitting di-gallium-based emitter crystal light diodes in a separated state are connected to the electrostatic anti-parallel-parallel diode photodiode The metal protector of the photodiodes is provided with crystal grains to seal the grains; and the encapsulation of the polar crystals is enclosed by the first polar grains of the metal p and N electrode end brackets, and the electrostatic system is 鬲The light emitting structure of the degree of emission can be a first and first electrostatic coating of the statically mounted colloidal bracket. The first 'metal, the nitriding protection, and the second drop setting system can avoid the protection of the current diode and the second metal feet. In the diode electric protection diode, the second metal / and second gold leg and the gallium-based light-emitting diode crystal are placed together; Further understanding of the characteristics and techniques of this creation The detailed description and drawings of this creation are shown below. The formula is provided for reference and explanation only, and is not intended to be used for this creation. [Embodiment] Please refer to the second picture, Sun Yishi h Examples provide a hair The first-embodiment of pole creation. The actual broadcast: package structure 9, the light-emitting diode exhibition structure 9 series includes the first gold 篦 a a 屦加加 Le ”弟一 metal feet 911, Θ12 • ^ metal bracket 9 1 、 Reynolds knives ~ Electric transport to read the first and second metal feet 9

第9頁 M259319 7、創作說明1、9 極體晶粒系發光二粒2與該該靜電防係呈一高晶粒1發二極體封其中 1係距離該氮之該第二端係藉第 9 1之該該靜 (6) 1 2之靜 1 、及包極體晶1 氮化鎵系護二極體度落差△ 射之光線裝結構9 ，該第一有一間隔化鎵系發金屬支腳一 3與第第二金屬電防護二 diode)、或一瞬變該封 I 1散佈碎膠樹脂之稱該封分別設置以及設置該封裝膠 1與第二裝膠體9 於其内；材料，該裝膠體9 於該第一於該弟-一體9 3係撐壁9 2 電防護二極覆該靜電防之封裝膠體發光二極體晶粒2與該 d設置；是係可避開靜係可維持其金屬支腳9 空間9 5 ( 光二極體晶 9 1 2之上二金屬導線支腳9 1 2 極體晶粒2 抑制二極體 3係為可透該封裝膠體發光二極體 3之支撐杯金屬支腳9 金屬支腳9 可填封於該 2内0 體晶粒護二極9 3° 晶粒1 氮化鎵以，該電防護高亮度 1 1與請參閱粒1係及該發 4分別與該第係可為 (TVS)-光材質 9 3係封裝結 9 2, 1 1上 1 2上支撐杯 2與體晶該靜係呈系發氮化二極與發該第第四設於光二電連氮化鎵粒2與電防護反向並光二極鎵系發體晶粒光顏色二金屬圖）。該金屬極體之接至該系發光二該氮化鎵二極體晶聯設置。體晶粒1 光二極體 2，發光均勻性。支腳9 2 Φ 支架9 1 P、N電極金屬支架金屬支腳9 1 1 。體（Zener 極，且具有之螢光粉9 可以為一環氧樹脂或構9係可進該支撐杯9 步具有 2係具有之第一撐壁921、之第二撐壁912, 9 2之第一撐壁9 2Page 9 M259319 7. Creation instructions 1, 9 Polar body crystal light-emitting particles 2 and the electrostatic protection system are a high-grain 1 hair diode seal, and 1 of them is separated from the second end of the nitrogen by borrowing. The static 1 of the 9th (6) 1 2 and the polar crystal 1 of the gallium nitride-based protective diode have a degree difference △ of the light installation structure 9, and the first has a spacer gallium-based metal The feet 1 and the second metal electric protection diode), or a transient that the seal I 1 is scattered with a broken resin, is called the seal, and the sealant 1 and the second gel 9 are placed therein; materials, The colloid 9 is placed on the first and the brother-integrated 9 3 series supporting wall 9 2 and the electrostatic protection diode is covered with the electrostatic colloidal light-emitting diode chip 2 and the d; it is to avoid the static system. Can maintain its metal feet 9 space 9 5 (light diode crystal 9 1 2 above the two metal wire legs 9 1 2 polar crystal grains 2 inhibit the diode 3 to be transparent to the encapsulating colloid light emitting diode 3 Support cup metal feet 9 metal feet 9 can be sealed in the body 0 body grain protection diode 9 3 ° grain 1 gallium nitride, the electrical protection High brightness 1 1 and please refer to the grain 1 series and the hair 4 and the first series can be (TVS)-light material 9 3 series packaging knot 9 2, 1 1 on 1 2 on the support cup 2 and the body crystal the static system The photodiode and the fourth color set of photodielectric gallium nitride particles 2 and the electrical protection are reversed and the photodiode gallium-based hair crystal grains are light-colored and two-metal). The metal pole is connected to the light-emitting diode and the gallium nitride diode. Bulk grains 1 Photodiodes 2 with uniform light emission. Feet 9 2 Φ Bracket 9 1 P, N electrode Metal bracket Metal feet 9 1 1. Body (Zener pole, and the fluorescent powder 9 can be an epoxy resin or a structure 9 can be entered into the support cup 9 step has a first support wall 921, a second support wall 912, 9 2 First supporting wall 9 2

第10頁 M259319 四、創作說明（7) 其中’该南度落差△ d係至少大於該靜電防護二極體晶粒2之高度。該發光二極體封裝結構9係可更進一步包括容設於該金屬支架9 1内之絕緣填充材9 4。少如同習知發光二極體封裝結構9 a ，此種將該氮化鎵系發光二極體晶粒1 a與該靜電防護二極體晶粒2 a呈反向並聯之組裝方式，突然遇到靜電放電情況產生時，本創乍同樣可以保護該氮化鎵系發光二極體晶粒1不受靜電干優或損害；且本創作係因該靜電防護二極體晶粒2與該氮化鎵系發光二極體晶粒1呈該高度落差△ d設置，避免該氮化鎵系發光二極體晶粒1發射之光線被該靜電防護二極體晶粒2所吸收，從而維持該發光二極體封裝結構9所能表現之亮度以及避免發光顏色不均之狀況產生。曰請參閱第二圖至第四圖所示，係為該靜電防護二極體曰曰粒2係具有上下相對之p、n電極端時，該發光二極體封袭結構9之第一至第三實施例。如第二圖，該發光二極體封農結構9之第一實施例，該第一金屬支腳9 1 1係包括 ^下傾斜延伸之第一彎折部9 1 1 1 、以及由該第一彎折 1 1 1水平延伸之第一支撐部9 1 1 2 ，該靜電防護二極體晶粒2係設置至該第一支撐部9 1 1 2上；該第一 ^折部9 1 1 1向下彎折之距離係為該高度落差△ d，是以該靜電防護二極體晶粒2與該氮化鎵系發光二極體晶粒 1係呈該高度落差△ d設置。如第三圖，該發光二極體封裝結構9之第二實施例，其中該第一金屬支腳9 1 1係包Page 10 M259319 IV. Creation Instructions (7) where ‘the south degree drop Δ d is at least greater than the height of the electrostatic protection diode grain 2. The light emitting diode package structure 9 may further include an insulating filling material 9 4 housed in the metal bracket 91. As little as the conventional light-emitting diode packaging structure 9 a, this kind of assembly method in which the gallium nitride-based light-emitting diode die 1 a and the electrostatic protection diode die 2 a are in antiparallel is suddenly encountered. When an electrostatic discharge situation occurs, Gentron can also protect the gallium nitride light-emitting diode grains 1 from static electricity or damage; and this creation is due to the electrostatic protection of the diode grains 2 and the nitrogen. The gallium-based light-emitting diode crystal grains 1 are arranged at the height difference Δ d to prevent the light emitted by the gallium nitride-based light-emitting diode crystal grains 1 from being absorbed by the electrostatic protection diode crystal grains 2, thereby maintaining the The brightness of the light-emitting diode package structure 9 and the situation of avoiding uneven light-emitting colors are generated. Please refer to the second to fourth figures, which are the electrostatic protection diodes. When the particle 2 has p and n electrode terminals facing up and down, the light emitting diode encapsulation structure 9 The third embodiment. As shown in the second figure, in the first embodiment of the light-emitting diode enclosure structure 9, the first metal leg 9 1 1 includes a first bent portion 9 1 1 1 which extends obliquely downward, and is formed by the first A first supporting portion 9 1 1 2 extending horizontally is bent, and the electrostatic protection diode crystal grain 2 is arranged on the first supporting portion 9 1 1 2; the first folding portion 9 1 1 The distance of the downward bending 1 is the height difference Δd, and the electrostatic protection diode crystal grains 2 and the gallium nitride-based light emitting diode crystal 1 are arranged at the height difference Δd. As shown in the third figure, the second embodiment of the light-emitting diode packaging structure 9, wherein the first metal leg 9 1 1 is a package

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M259319 四、創作說明（8) 括向下延伸之第一 U型承載部9 1 1 3 ，該靜電防護二極體晶粒2係設置至該第一 U型承載部9 1 1 3之底面，該第一U型承載部9113向下凹之深度係為該高度落差八 d ，是以該靜電防護二極體晶粒2與該氮化鎵系發光二極體晶粒1係呈該高度落差△ d設置。如第四圖，該發光二極體封裝結構9之第三實施例，該第二金屬支腳9 1 2係包括向上傾斜延伸之第二彎折部9 1 2 1 、以及由該第二彎折部9 1 2 1水平延伸之第二支撐部9 1 2 2，該氮化鎵系發光二極體晶1粒係設置至該第二支撐部9 1 2 2 ，該第二彎折部9 1 2 1向上彎折之高度致使該靜電防護二極體晶粒2與該氮化鎵系發光二極體晶粒1係呈該高度落差△ d設置。上述三實施例皆利用該金屬支架9 1具有結構各異之該第一或第二金屬支腳9 1 1 、9 1 2向上或向下延伸，造成該第一或第二金屬支腳9 1 1 、9 1 2之間具有該高度落差△ d ，進以達到該靜電防護二極體晶粒2 與該氣化蘇糸發光二極體晶粒1垂直相距有該南度洛差△ d。上述三實施例之該靜電防護二極體晶粒2係皆藉由導電材料2 0 (例如銀膠）電連接該P電極端至該金屬支架 9 1之該第一金屬支腳9 1 1 ，且藉第三金屬導線5電連接該N電極端至該金屬支架9 1之該第二金屬支腳9 1 2 '· 〇請參閱第五圖至第八圖所示，該靜電防護二極體晶粒 2係具有同側橫向之P、N電極端時，該發光二極體封裝結構9之第四與第五實施例。該第一金屬支腳9 1 1係具有M259319 Fourth, the creation description (8) includes the first U-shaped load-bearing portion 9 1 1 3 extending downward, and the electrostatic protection diode crystal 2 is arranged on the bottom surface of the first U-shape load-bearing portion 9 1 1 3, The depth of the first U-shaped load-bearing portion 9113 recessed downward is the height difference of eight d, and the height difference is represented by the electrostatic protection diode crystal grains 2 and the gallium nitride-based light emitting diode crystal grains 1. △ d is set. As shown in the fourth figure, the third embodiment of the light emitting diode package structure 9, the second metal leg 9 1 2 includes a second bent portion 9 1 2 1 extending obliquely upward, and the second bent portion 9 1 2 The folded portion 9 1 2 1 is a horizontally extending second supporting portion 9 1 2 2. One grain of the gallium nitride-based light-emitting diode crystal is provided to the second supporting portion 9 1 2 2, and the second folded portion 9 The height of the upward bending of 1 2 1 causes the electrostatic protection diode crystal grains 2 and the gallium nitride-based light emitting diode crystal grains 1 to be arranged at the height difference Δ d. The above three embodiments all use the metal bracket 9 1 to have the first or second metal feet 9 1 1 and 9 1 2 with different structures extending upward or downward, resulting in the first or second metal feet 9 1 The height drop Δ d is between 1 and 9 1 2, and the south degree difference Δ d is perpendicular to the electrostatic protection diode crystal grain 2 and the vaporized thallium light emitting diode crystal grain 1. The electrostatic protection diode grains 2 of the above three embodiments are all electrically connected to the P electrode terminal to the first metal leg 9 1 1 of the metal bracket 9 1 through a conductive material 20 (such as silver glue), And the third metal wire 5 is used to electrically connect the N electrode terminal to the second metal leg 9 1 2 'of the metal bracket 9 1. Please refer to the fifth to eighth figures for the electrostatic protection diode. The fourth and fifth embodiments of the light emitting diode package structure 9 when the die 2 has P and N electrode terminals in the same lateral direction. The first metal leg 9 1 1 has

第12頁 M259319 四、創作說明（9) 與該封裝膠體9 3鄰接之第一延伸部9 1 1 4，以及位於該第一延伸部9 1 1 4上且可容置該靜電防護二極體晶粒之凹洞9 1 1 5 。如第五圖之第四實施例之剖視示意圖及第六圖之第四實施例之俯視圖，該凹洞9 1 1 5係設於該第一延伸部9 1 1 4之中間部位，不與該間隔空間9 5呈連通狀態。如第七圖之第五實施例之剖視示意圖及第八圖之第五實施例之俯視圖，該凹洞9 1 1 5係設於該第一延伸部9 1 1 4之邊角部位，與該間隔空間9 5相連通。上述兩實施例皆利用該金屬支架9 1之該第一金屬支腳9 1 1具有該凹洞9115 ，該凹洞9115係具有該高度落 f 差△ d之深度，造成該靜電防護二極體晶粒2與該氮化鎵系發光二極體晶粒1垂直相距有該高度落差△ d。上述兩實施例之該靜電防護二極體晶粒2係藉由第三金屬導線5 電連接該N電極端至該金屬支架91之該第二金屬支腳9 1 2、及第四金屬導線6電連接該P電極端至該金屬支架 91之該第一金屬支腳911。是以，上述實施例之該氮化鎵系發光二極體晶粒1係為藍光發光二極體，該螢光粉係可被激發出黃色光，經該金屬支架9 1具有不同構形之結構，使得靜電防護二極體晶粒2與該氮化鎵系發光二極體晶粒1呈該高度落差△ d 'β 設置，避免該氮化鎵系發光二極體晶粒1發射之光線被該靜電防護二極體晶粒2所吸收，從而維持該發光二極體封裝結構9所能表現之亮度以及避免發光顏色不均之狀況產生。Page 12 M259319 IV. Creation instructions (9) The first extension 9 1 1 4 adjacent to the encapsulant 9 3 and the electrostatic protection diode located on the first extension 9 1 1 4 The dimples 9 1 1 5. As shown in the schematic cross-sectional view of the fourth embodiment of the fifth figure and the top view of the fourth embodiment of the sixth figure, the recess 9 1 1 5 is provided in the middle portion of the first extension 9 1 1 4 and does not correspond to This partition space 95 is in a connected state. As shown in the schematic cross-sectional view of the fifth embodiment of the seventh figure and the top view of the fifth embodiment of the eighth figure, the recess 9 1 1 5 is provided at a corner portion of the first extension 9 1 1 4 and The space 95 is connected to each other. In the above two embodiments, the first metal leg 9 1 1 of the metal bracket 9 1 has the recess 9115, and the recess 9115 has a depth of the height drop f difference Δ d, resulting in the electrostatic protection diode. The height difference Δd between the crystal grain 2 and the gallium nitride-based light emitting diode crystal grain 1 is perpendicular to each other. The electrostatic protection diode grains 2 of the above two embodiments are electrically connected from the N electrode terminal to the second metal leg 9 1 2 of the metal bracket 91 through the third metal wire 5 and the fourth metal wire 6 The P electrode terminal is electrically connected to the first metal leg 911 of the metal bracket 91. Therefore, the gallium nitride-based light-emitting diode grains 1 of the above embodiment are blue light-emitting diodes, the phosphor powder can be excited to emit yellow light, and the metal bracket 9 1 has a different configuration. The structure makes the electrostatic protection diode grain 2 and the gallium nitride-based light-emitting diode grain 1 have the height difference Δ d 'β to prevent light emitted from the gallium nitride-based light-emitting diode grain 1. It is absorbed by the electrostatic protection diode crystal grains 2, thereby maintaining the brightness that the light emitting diode packaging structure 9 can exhibit and avoiding the occurrence of uneven light emitting colors.

第13頁 M259319 四、創作說明（ίο) 綜上所述，本創作確實可達到預期之目的與功效，惟上述揭露技術手段僅係本創作之一較佳實施例，任何依本創作之精神、特徵所為之修飾與變化，皆應包含於如後隨附之申請專利範圍内。 ❿Page 13 M259319 IV. Creative Instructions (ίο) In summary, this creation can indeed achieve the intended purpose and effect, but the above disclosed technical means is only a preferred embodiment of this creation. Anyone who follows the spirit of this creation, Modifications and variations of features should be included in the scope of patent application as attached below. ❿

第14頁 M259319 圖意示視刮之構結裝封體極二光發知習 1為明係說，單示 I簡所單示圖簡 -式圖一圖ί第裝封體極二光發之例施實 - 第之作創本為係示所圖二第裝封體極二光發之例施實二第 ;之圖作意創示本視為剖係之，構示結所圖三第裝封體極二光發之例施實三第 •，之圖作意創示本視為剖係之，構示結所圖四第Page 14 M259319 The figure shows the structure of the packaged body of the two-colored hair. The first practice is the theory of the Ming Dynasty. Example Implementation-The first creation is shown in Figure 2 and the second packaged body pole is two examples of light emitting; the illustration is intended to create the illustration as a system, and the structure is shown in Figure 3 The example of the first package body pole two light hair implementation of the third embodiment of the illustration, the creation of the illustration is regarded as the system, and the construction of the fourth illustration

If 裝封體極二光發之 •例施實四第 ;之圖作意創示本視為剖係之，構示結所圖五第圖作圖意創意示本示視為視俯係剖之，之構示構結所結圖六第作圖創意本示為視係俯，之示構所結圖七第之；之裝封體極二光發之例施實四第裝封體極二光發之例施實五第及裝封體極二光發之例施實五第之。作圖創意本示為視係剖，之示構所結圖八第構結裝 1J Μ 1 a 明體 a 9 2 說極1腳2 3 號二 9支9 9 符光架屬壁體件發支金撐膠元知屬二二裝 ί習金第第封 2 a a 腳2 a 1 支 9 2 3 屬壁 9 9 金撐杯粉一一撐光第第支螢 a a aIf the encapsulation body is extremely light-emitting, the example is the fourth embodiment; the drawings are intended to be created, and the version is considered to be a system, and the structure is shown in Figure 5. Among them, the structure of the structure is shown in Figure 6. The drawing creative idea is shown as a perspective view, and the structure of the structure is shown in Figure 7. The illustration of the package body is two. The example of the light emitting is the fourth embodiment of the package body. The example of the second light hair implements the fifth and the example of the packaged body pole two light hair implements the fifth. The creative drawing is shown as a visual section, and the structure shown in the figure is the eighth structure 1J Μ 1 a Ming body a 9 2 said pole 1 foot 2 3 2 9 9 9 Fu light frame belongs to the wall body Gold stick rubber element is known as the second and second installment of the first gold seal 2 aa feet 2 a 1 branch 9 2 3 genus wall 9 9 gold cup powder one by one to support the first firefly aaa

11

第15頁 M259319 圖式簡單說明絕緣填充材9 4 a 氮化鎵系發光二極體晶粒1 a藍寶石基板1 〇 a 靜電防護二極體晶粒2 a 導電材料2 0 a 第一、第二、第三金屬導線3a 、4a 、5a 本創作之發光二極體封裝結構9 金屬支架91 第一金屬支腳911 第一彎折部9 1 1 1 第一支撐部9 1 1 2 第一U型承載部9113第一延伸部9114 第二金屬支腳912 凹洞9 1 1 第二彎折部支撐杯9 2 第二撐壁9 2 2 螢光粉9 3 1 氮化鎵系發光二極體晶粒1 靜電防護二極體晶粒2 導電材料2 0 第一、第二、第三、第四金屬導線3 、高度落差△ d 12 1 第二支撐部9 第一撐壁9 2 封裝膠體9 3 絕緣填充材9 12 2 1 4 4 、5 6 Φ #Page 15 M259319 Schematic description of insulating filling material 9 4 a GaN-based light-emitting diode die 1 a Sapphire substrate 1 〇a Electrostatic protection diode die 2 a Conductive material 2 0 a First, second 3rd metal wire 3a, 4a, 5a The light emitting diode packaging structure 9 of this creation 9 metal bracket 91 first metal leg 911 first bending portion 9 1 1 1 first supporting portion 9 1 1 2 first U-shaped Carrying part 9113 First extension 9114 Second metal leg 912 Recess 9 1 1 Second bending part support cup 9 2 Second support wall 9 2 2 Fluorescent powder 9 3 1 GaN-based light-emitting diode crystal Grain 1 Electrostatic protection diode crystal grain 2 Conductive material 2 0 First, second, third, fourth metal wire 3, height difference Δ d 12 1 Second support portion 9 First support wall 9 2 Encapsulant 9 3 Insulation filling material 9 12 2 1 4 4 、 5 6 Φ #

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Claims

M259319 五、申請專利範圍金腳；靜係電連接防護二極聯設置， :晶粒係體晶粒係二極體之接至該金封鎵系發光 2、構，其中 diode)" 3、構，其中 4、構，其中高度。 5、構，其中極端。二極體屬支架與該氮電防護度落差金屬支極端係之該第，係包晶粒於專利範防護二變抑制專利範膠體係專利範落差係專利範防護二晶粒與之該第化鎵系二極體設置；架之該精由苐二金屬覆該靜該金屬圍第1 極體晶二極體圍第1 為一環圍第1 至少大圍第1 極體晶該第一二極體〇之發光一齊納之發光或>5夕膠之發光電防護體封裝結構，係包括：有呈分離狀態之第一及第二金屬支一種發光二極屬支架，係具電防護至該金體晶粒且該靜呈一高設於該 P、N電屬支架裝膠體二極體如申請該靜電或一瞬如申請該封裝如申請該高度如申請該靜電氮化鎵系發光一與第二金屬發光二極體晶晶粒與該氮化其中，該氮化第二金屬支腳一與第二金屬支腳與電防護支架上項所述粒係為 (TVS)( 項所述氧樹脂項所述於該靜項所述之發光粒係具有上下二極體晶粒9 支腳，該靜電粒係呈反向並鎵系發光二極鎵系發光二極之上及該發光導線分別電連金屬支腳；及晶粒、該氮化二極體封裝結二極體（Zener 二極體封裝結樹脂材料。二極體封裝結二極體晶粒之二極體封裝結相對之P、N電M259319 V. The scope of the patent application: Golden feet; Static system electrical connection protection diode set up: The grain system body is connected to the gold-encapsulated gallium system light-emitting 2, structure, of which diode) " 3. Structure, where 4, structure, where height. 5, structure, of which extremes. The diode belongs to the bracket and the difference between the nitrogen protection degree and the metal branch. The diode is covered by the patent protection. The patent protection system is patented. The patent difference is the patent protection protection. The gallium-based diode is set up; the essence of the frame is covered by a metal, the metal surrounds the first pole crystal, the diode surrounds the first, and the ring surrounds the first pole, at least the Dawei first pole crystal, and the first diode. The body 0 ’s luminescence, the zener ’s luminescence, or > 5th glue glue luminous electrical protective body packaging structure includes: a first and a second metal branch in a separated state, a light-emitting diode-type bracket, which is electrically protected to the Gold body grains and the static is a high mounted on the P, N electric bracket mounted colloidal diodes, such as the application of the static electricity or a momentary application of the package, such as the application of the height, such as the electrostatic gallium nitride light-emitting one and the second metal The light-emitting diode crystal grains and the nitridation, the nitrided second metal leg, the second metal leg, the second metal leg, and the electric protection bracket, the above-mentioned particle system is (TVS) (the above-mentioned oxygen resin project) Described in the The light-emitting particle system according to the item has 9 legs of upper and lower diode crystal grains, the electrostatic particle system is opposite and above the gallium-based light-emitting diode, and the light-emitting wire is electrically connected to the metal leg; and Die, the nitride diode package junction diode (Zener diode package junction resin material. Diode package junction Diode package junction diode P, N electrical

第17頁 M259319 五、申請專利範圍 6 、如申請專利範圍第，其中該第一金屬支腳係、以及由該第一彎折部水護二極體晶粒係設置至該 7 、如申請專利範圍第，其中該第一金屬支腳係 ’該靜電防護二極體晶粒底面。 8 、如申請專利範圍第其中該第二金屬支腳係以及由該第二彎折部水發光二極體晶粒係設置 ^ Z二如中請專利範圍第 ΐ雷二t該靜t防護二極體 ^ 2至該金屬支架之該 f體曰曰粒係藉第三金屬導線架之T第二金屬支腳結構3中；：請專利範圍 ,3，Ρ λ中該靜電防護二極向之Ρ、Ν電極端。裝結構I复Ϊ :請專利範圍異中該第一金第一延伸部，… ^ ^ m 以及位於該第晶粒之凹洞。構部防構部構部 5項所述之發光二極體封士包括向下傾斜延伸之第—^ = 平延伸之第一支撐部，該靜^ 第一支撐部。寬 5項所述之發光二極體封裝於包括向下延伸之第一U型承& 係設置至該第一 U型承載部之 5項所述之發光二極體封裝結包括向上傾斜延伸之第二彎折平延伸之第二支撐部，該氮化至該第二支撐部。 5項所述之發光二極體封裝結晶粒係藉由導電材料電連接該第一金屬支腳，該靜電防護二電連接該Ν電極端至該金屬支苐1項所过〔夕父體晶粒係^發光二極體封裝、/、有同時位於上侧橫第1 0項所、+、腳係具有與二之發光二極體封一延伸部2 “封袭膠體鄰接之且可容置該靜電防 Μι 第18頁 M259319 五、申請專利範圍 1 2、如申請專利範圍第1 1項所述之發光二極體封裝結構，其中該凹洞係設於該第一延伸部之中間部位。 1 3、如申請專利範圍第1 1項所述之發光二極體封裝結構，其中該第一金屬支腳與該第二金屬支腳係距離有一間隔空間，該凹洞係與該間隔空間相連通。 1 4、如申請專利範圍第1 1項所述之發光二極體封裝結構，其中該靜電防護二極體晶粒係藉由第三金屬導線電連接該N電極端至該金屬支架之該第二金屬支腳、及第四金屬導線電連接該P電極端至該金屬支架之該第一金屬支腳。 ψPage 17 M259319 5. The scope of patent application 6, such as the scope of patent application, in which the first metal leg system and the water-proof diode crystal grain system of the first bending part are set to the 7, such as the patent application The first range is where the first metal leg is the bottom surface of the ESD diode chip. 8. If the scope of the patent application is the first one, the second metal leg system and the second light-emitting diode crystal grain system are provided. The polar body ^ 2 to the f body of the metal stent is said to be in the second metal leg structure 3 of the third metal lead frame by T :; please patent the scope, 3, P λ to the electrostatic protection diode P, N electrode terminal. The mounting structure I is complex: the scope of the patent is different from the first gold first extension, ... ^ ^ m and the cavity located in the first grain. Structure Anti-structure Structure Structure The light-emitting diode seal described in item 5 includes a first support portion that extends downwardly at an obliquely downward direction, and a first support portion that extends statically. The light-emitting diode package described in Item 5 includes a first U-shaped bearing extending downwardly. The light-emitting diode package described in Item 5 provided in the first U-shaped load bearing portion includes an inclined upward extension. The second bent and extended second supporting portion is nitrided to the second supporting portion. The light-emitting diode packaged crystal particles described in item 5 are electrically connected to the first metal leg through a conductive material, and the electrostatic protection diode is electrically connected to the N electrode terminal to the metal leg. Granular ^ light emitting diode package, /, at the same time located on the upper side of the 10th project, +, feet with the two light emitting diode seal 1 extension 2 "adhesive colloid adjacent and can be accommodated The static electricity protection M18 page 18 M259319 V. Application scope 1 2. The light-emitting diode packaging structure described in item 11 of the scope of patent application, wherein the recess is provided in the middle portion of the first extension portion. 13 3. The light emitting diode package structure according to item 11 of the scope of patent application, wherein the first metal leg is spaced apart from the second metal leg by a space, and the cavity is connected to the space 14. The light-emitting diode packaging structure as described in item 11 of the scope of patent application, wherein the electrostatic protection diode crystal grains are electrically connected to the N electrode terminal to the metal bracket through a third metal wire. The second metal leg and the fourth metal wire are electrically connected Connect the P electrode terminal to the first metal leg of the metal bracket.

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