TWI849969B

TWI849969B - Converter

Info

Publication number: TWI849969B
Application number: TW112121762A
Authority: TW
Inventors: 泉本尚人
Original assignee: 日商松下知識產權經營股份有限公司
Priority date: 2022-06-17
Filing date: 2023-06-12
Publication date: 2024-07-21

Abstract

本發明之目的在於達到高功率因數化及高效率化。本發明之轉換裝置(1)具備整流器(2)、半橋變流器(3)、輸入電感器(Lin)、變壓器(Tr1)、全橋變流器(4)、電感器(L1)及控制裝置(5)。變壓器(Tr1)中，在半橋變流器(3)中之第1輸出端(34)與第2輸出端(35)之間連接一次線圈(N1)。全橋變流器(4)連接於變壓器(Tr1)之二次線圈(N2)。電感器(L1)連接在半橋變流器(3)與一次線圈(N1)之間或二次線圈(N2)與全橋變流器(4)之間。控制裝置(5)控制半橋變流器(3)及全橋變流器(4)。 The purpose of the present invention is to achieve high power factor and high efficiency. The conversion device (1) of the present invention has a rectifier (2), a half-bridge converter (3), an input inductor (Lin), a transformer (Tr1), a full-bridge converter (4), an inductor (L1) and a control device (5). In the transformer (Tr1), a primary coil (N1) is connected between the first output terminal (34) and the second output terminal (35) in the half-bridge converter (3). The full-bridge converter (4) is connected to the secondary coil (N2) of the transformer (Tr1). The inductor (L1) is connected between the half-bridge converter (3) and the primary coil (N1) or between the secondary coil (N2) and the full-bridge converter (4). The control device (5) controls the half-bridge converter (3) and the full-bridge converter (4).

Description

轉換裝置Conversion device

本發明係關於一種轉換裝置，更詳細而言，係關於一種具備變壓器之轉換裝置。The present invention relates to a conversion device, and more specifically, to a conversion device having a transformer.

日本專利第6388745號公報揭示一種將來自交流電源之輸入功率轉換為期望之直流功率之功率轉換裝置(轉換裝置)。日本專利第6388745號公報所揭示之功率轉換裝置具備變壓器。Japanese Patent No. 6388745 discloses a power conversion device (conversion device) that converts input power from an AC power source into desired DC power. The power conversion device disclosed in Japanese Patent No. 6388745 includes a transformer.

具備變壓器之轉換裝置中，有時期望更加高功率因數化及高效率化。In a conversion device having a transformer, a higher power factor and higher efficiency are sometimes desired.

本發明之目的在於提供一種可達到高功率因數化及高效率化之轉換裝置。 [解決課題之手段] The purpose of the present invention is to provide a conversion device that can achieve high power factor and high efficiency. [Means for solving the problem]

依本發明之一態樣之轉換裝置，具備整流器、半橋變流器、輸入電感器、變壓器、全橋變流器、電感器及控制裝置。該整流器係由第1二極體及串聯於該第1二極體之第2二極體構成。該整流器中，交流電源之第1交流輸出端連接於該第1二極體與該第2二極體之連接點。該半橋變流器具有第1半導體開關元件與第2半導體開關元件之第1串聯電路，以及第1電容器與第2電容器之第2串聯電路。該第2串聯電路與該第1串聯電路並聯。該半橋變流器中，該第1半導體開關元件連接於該第1二極體之陰極，該第2半導體開關元件連接於第2二極體之陽極。該半橋變流器中，該交流電源之第2交流輸出端連接於該第1半導體開關元件與該第2半導體開關元件之連接點。該輸入電感器連接在該交流電源與該整流器或該半橋變流器之間。該變壓器包含一次線圈及二次線圈。該變壓器中，在該半橋變流器中之該第1半導體開關元件與該第2半導體開關元件之間的第1輸出端與該半橋變流器中之該第1電容器與該第2電容器之間的第2輸出端之間，連接該一次線圈。該全橋變流器連接於該變壓器之該二次線圈。該全橋變流器具有第3半導體開關元件、第4半導體開關元件、第5半導體開關元件及第6半導體開關元件。該電感器連接在該半橋變流器之該第1輸出端與該一次線圈之間，或該半橋變流器之該第2輸出端與該一次線圈之間，或該二次線圈與該全橋變流器之間。該控制裝置控制該半橋變流器及該全橋變流器。A conversion device according to one aspect of the present invention comprises a rectifier, a half-bridge converter, an input inductor, a transformer, a full-bridge converter, an inductor and a control device. The rectifier is composed of a first diode and a second diode connected in series with the first diode. In the rectifier, a first AC output terminal of an AC power source is connected to a connection point between the first diode and the second diode. The half-bridge converter has a first series circuit of a first semiconductor switch element and a second semiconductor switch element, and a second series circuit of a first capacitor and a second capacitor. The second series circuit is connected in parallel with the first series circuit. In the half-bridge converter, the first semiconductor switch element is connected to the cathode of the first diode, and the second semiconductor switch element is connected to the anode of the second diode. In the half-bridge converter, the second AC output terminal of the AC power source is connected to the connection point between the first semiconductor switch element and the second semiconductor switch element. The input inductor is connected between the AC power source and the rectifier or the half-bridge converter. The transformer includes a primary coil and a secondary coil. In the transformer, the primary coil is connected between the first output terminal between the first semiconductor switch element and the second semiconductor switch element in the half-bridge converter and the second output terminal between the first capacitor and the second capacitor in the half-bridge converter. The full-bridge converter is connected to the secondary coil of the transformer. The full-bridge converter has a third semiconductor switch element, a fourth semiconductor switch element, a fifth semiconductor switch element, and a sixth semiconductor switch element. The inductor is connected between the first output terminal of the half-bridge converter and the primary coil, or between the second output terminal of the half-bridge converter and the primary coil, or between the secondary coil and the full-bridge converter. The control device controls the half-bridge converter and the full-bridge converter.

依本發明之另一態樣之轉換裝置，具備整流器、第1半橋變流器、輸入電感器、變壓器、電感器、第2半橋變流器及控制裝置。該整流器係由該第1二極體及串聯於該第1二極體之第2二極體構成。該整流器中，交流電源之第1交流輸出端連接於該第1二極體與該第2二極體之連接點。該第1半橋變流器具有第1半導體開關元件與第2半導體開關元件之第1串聯電路，以及第1電容器與第2電容器之第2串聯電路。該第2串聯電路與該第1串聯電路並聯。該第1半橋變流器中，該第1半導體開關元件連接於該第1二極體之陰極，該第2半導體開關元件連接於第2二極體之陽極。該第1半橋變流器中，該交流電源之第2交流輸出端連接於該第1半導體開關元件與該第2半導體開關元件之連接點。該輸入電感器連接在該交流電源與該整流器或該第1半橋變流器之間。該變壓器包含一次線圈及二次線圈。該變壓器中，在該第1半橋變流器中之該第1半導體開關元件與該第2半導體開關元件之間的第1輸出端與該半橋變流器中之該第1電容器與該第2電容器之間的第2輸出端之間，連接該一次線圈。該電感器連接在該第1半橋變流器之該第1輸出端或該第2輸出端與該一次線圈之間。該第2半橋變流器連接於該變壓器之該二次線圈。該第2半橋變流器具有第3半導體開關元件、第4半導體開關元件、第3電容器及第4電容器。該控制裝置控制該第1半橋變流器及該第2半橋變流器。According to another aspect of the present invention, a conversion device comprises a rectifier, a first half-bridge converter, an input inductor, a transformer, an inductor, a second half-bridge converter and a control device. The rectifier is composed of the first diode and the second diode connected in series with the first diode. In the rectifier, the first AC output terminal of the AC power source is connected to the connection point between the first diode and the second diode. The first half-bridge converter has a first series circuit of a first semiconductor switch element and a second semiconductor switch element, and a second series circuit of a first capacitor and a second capacitor. The second series circuit is connected in parallel with the first series circuit. In the first half-bridge converter, the first semiconductor switch element is connected to the cathode of the first diode, and the second semiconductor switch element is connected to the anode of the second diode. In the first half-bridge converter, the second AC output terminal of the AC power source is connected to the connection point between the first semiconductor switch element and the second semiconductor switch element. The input inductor is connected between the AC power source and the rectifier or the first half-bridge converter. The transformer includes a primary coil and a secondary coil. In the transformer, the primary coil is connected between the first output terminal between the first semiconductor switch element and the second semiconductor switch element in the first half-bridge converter and the second output terminal between the first capacitor and the second capacitor in the half-bridge converter. The inductor is connected between the first output terminal or the second output terminal of the first half-bridge converter and the primary coil. The second half-bridge converter is connected to the secondary coil of the transformer. The second half-bridge converter has a third semiconductor switch element, a fourth semiconductor switch element, a third capacitor and a fourth capacitor. The control device controls the first half-bridge converter and the second half-bridge converter.

(實施態樣1) 以下，基於圖1～10B說明依實施態樣1之轉換裝置1。 (Implementation Example 1) The following describes the conversion device 1 according to Implementation Example 1 based on Figures 1 to 10B.

(1)概要依實施態樣1之轉換裝置1如圖1所示，係具備變壓器Tr1之絕緣型AC－DC轉換器。轉換裝置1具備整流器2、半橋變流器3、輸入電感器Lin、變壓器Tr1、電感器L1、全橋變流器4及控制裝置5。又，轉換裝置1更具備輸入濾波器6。 (1) Overview The converter 1 according to the embodiment 1 is an insulated AC-DC converter having a transformer Tr1 as shown in FIG1 . The converter 1 has a rectifier 2, a half-bridge converter 3, an input inductor Lin, a transformer Tr1, an inductor L1, a full-bridge converter 4 and a control device 5. In addition, the converter 1 is further provided with an input filter 6.

又，轉換裝置1更具備複數之外部連接端子。複數之外部連接端子包含第1輸入端子11、第2輸入端子12、第1輸出端子13及第2輸出端子14。轉換裝置1在第1輸入端子11與第2輸入端子12之間連接交流電源8。在轉換裝置1中，從交流電源8輸入之輸入電壓Vin例如係正弦波狀之交流電壓。交流電源8例如包含商用電源。Furthermore, the conversion device 1 is further provided with a plurality of external connection terminals. The plurality of external connection terminals include a first input terminal 11, a second input terminal 12, a first output terminal 13, and a second output terminal 14. The conversion device 1 is connected to an AC power source 8 between the first input terminal 11 and the second input terminal 12. In the conversion device 1, the input voltage Vin input from the AC power source 8 is, for example, a sinusoidal AC voltage. The AC power source 8 includes, for example, a commercial power source.

在轉換裝置1之第1輸出端子13與第2輸出端子14之間，例如經由對轉換裝置1之輸出電壓進行電壓轉換之DC－DC轉換器連接負荷。負荷例如包含智慧型手機等行動機器、筆記型電腦或LED(Light Emitting Diode，發光二極體)照明機器。在轉換裝置1之第1輸出端子13與第2輸出端子14之間，亦可不經由DC－DC轉換器等其他電路而直接連接負荷。A load is connected between the first output terminal 13 and the second output terminal 14 of the conversion device 1, for example, via a DC-DC converter that converts the output voltage of the conversion device 1. The load includes, for example, a mobile device such as a smart phone, a laptop computer, or an LED (Light Emitting Diode) lighting device. The load may also be directly connected between the first output terminal 13 and the second output terminal 14 of the conversion device 1 without passing through other circuits such as a DC-DC converter.

(2)詳細說明以下，參照圖1～9更加詳細說明依實施態樣1之轉換裝置1。 (2) Detailed description The following is a more detailed description of the conversion device 1 according to the embodiment 1 with reference to FIGS. 1 to 9.

(2.1)外部連接端子如上所述，複數之外部連接端子包含第1輸入端子11、第2輸入端子12、第1輸出端子13及第2輸出端子14。 (2.1) External connection terminals As described above, the plurality of external connection terminals include a first input terminal 11, a second input terminal 12, a first output terminal 13, and a second output terminal 14.

在第1輸入端子11與第2輸入端子12之間連接交流電源8。更詳細而言，於第1輸入端子11，連接具有第1交流輸出端81及第2交流輸出端82之交流電源8的第1交流輸出端81。又，於第2輸入端子12連接交流電源8之第2交流輸出端82。The AC power source 8 is connected between the first input terminal 11 and the second input terminal 12. More specifically, the first AC output terminal 81 of the AC power source 8 having the first AC output terminal 81 and the second AC output terminal 82 is connected to the first input terminal 11. Also, the second AC output terminal 82 of the AC power source 8 is connected to the second input terminal 12.

(2.2)整流器整流器2係由第1二極體D1及串聯於第1二極體D1之第2二極體D2構成。整流器2中，交流電源8之第1交流輸出端81連接於第1二極體D1與第2二極體D2之連接點21。更詳細而言，於整流器2之連接點21，經由輸入濾波器6之電感器Lf及輸入電感器Lin，連接交流電源8之第1交流輸出端81。 (2.2) Rectifier The rectifier 2 is composed of a first diode D1 and a second diode D2 connected in series with the first diode D1. In the rectifier 2, the first AC output terminal 81 of the AC power source 8 is connected to the connection point 21 between the first diode D1 and the second diode D2. More specifically, the connection point 21 of the rectifier 2 is connected to the first AC output terminal 81 of the AC power source 8 via the inductor Lf of the input filter 6 and the input inductor Lin.

(2.3)輸入濾波器輸入濾波器6例如係由包含電感器Lf及電容器Cf之L型LC濾波器構成之低通濾波器。低通濾波器之截止頻率係高於交流電源8之頻率的頻率，且係低於第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率的頻率。 (2.3) Input filter The input filter 6 is, for example, a low-pass filter composed of an L-type LC filter including an inductor Lf and a capacitor Cf. The cutoff frequency of the low-pass filter is higher than the frequency of the AC power source 8 and lower than the switching frequency of the first semiconductor switch element Q1 and the second semiconductor switch element Q2.

(2.4)輸入電感器輸入電感器Lin連接在交流電源8之第1交流輸出端81與整流器2之連接點21之間。輸入電感器Lin具有第1端及第2端。輸入電感器Lin之第1端連接於輸入濾波器6之電感器Lf，並經由電感器Lf連接於交流電源8之第1交流輸出端81。輸入電感器Lin之第2端連接於整流器2中之第1二極體D1與第2二極體D2之連接點21。亦即，輸入電感器Lin之第2端連接於第1二極體D1之陽極及第2二極體D2之陰極。 (2.4) Input inductor The input inductor Lin is connected between the first AC output terminal 81 of the AC power source 8 and the connection point 21 of the rectifier 2. The input inductor Lin has a first end and a second end. The first end of the input inductor Lin is connected to the inductor Lf of the input filter 6, and is connected to the first AC output terminal 81 of the AC power source 8 through the inductor Lf. The second end of the input inductor Lin is connected to the connection point 21 of the first diode D1 and the second diode D2 in the rectifier 2. That is, the second end of the input inductor Lin is connected to the anode of the first diode D1 and the cathode of the second diode D2.

(2.5)半橋變流器半橋變流器3具有第1半導體開關元件Q1與第2半導體開關元件Q2之第1串聯電路31，以及第1電容器C1與第2電容器C2之第2串聯電路32。第2串聯電路32與第1串聯電路31並聯。半橋變流器3中，第1半導體開關元件Q1連接於第1二極體D1之陰極，第2半導體開關元件Q2連接於第2二極體D2之陽極。半橋變流器3中，交流電源8之第2交流輸出端82連接於第1半導體開關元件Q1與第2半導體開關元件Q2之連接點33。 (2.5) Half-bridge converter The half-bridge converter 3 has a first series circuit 31 of a first semiconductor switch element Q1 and a second semiconductor switch element Q2, and a second series circuit 32 of a first capacitor C1 and a second capacitor C2. The second series circuit 32 is connected in parallel to the first series circuit 31. In the half-bridge converter 3, the first semiconductor switch element Q1 is connected to the cathode of the first diode D1, and the second semiconductor switch element Q2 is connected to the anode of the second diode D2. In the half-bridge converter 3, the second AC output terminal 82 of the AC power source 8 is connected to the connection point 33 between the first semiconductor switch element Q1 and the second semiconductor switch element Q2.

半橋變流器3中，第1半導體開關元件Q1及第2半導體開關元件Q2分別具有控制端子、第1主端子及第2主端子。第1半導體開關元件Q1及第2半導體開關元件Q2之控制端子連接於控制裝置5。第1半導體開關元件Q1對應於控制裝置5給予的第1切換信號S1而開啟、關閉。又，第2半導體開關元件Q2對應於控制裝置5給予的第2切換信號S2而開啟、關閉。第1半導體開關元件Q1及第2半導體開關元件Q2例如係GaN系GIT(Gate Injection Transistor，閘極注入電晶體)。第1半導體開關元件Q1及第2半導體開關元件Q2中，控制端子、第1主端子及第2主端子分別係閘極端子、汲極端子及源極端子。第1半導體開關元件Q1及第2半導體開關元件Q2分別在第1主端子(汲極端子)與第2主端子(源極端子)之間具有寄生電容。In the half-bridge converter 3, the first semiconductor switch element Q1 and the second semiconductor switch element Q2 have a control terminal, a first main terminal, and a second main terminal, respectively. The control terminals of the first semiconductor switch element Q1 and the second semiconductor switch element Q2 are connected to the control device 5. The first semiconductor switch element Q1 is turned on and off in response to the first switching signal S1 given by the control device 5. In addition, the second semiconductor switch element Q2 is turned on and off in response to the second switching signal S2 given by the control device 5. The first semiconductor switch element Q1 and the second semiconductor switch element Q2 are, for example, GaN-based GITs (Gate Injection Transistors). In the first semiconductor switch element Q1 and the second semiconductor switch element Q2, the control terminal, the first main terminal and the second main terminal are respectively a gate terminal, a drain terminal and a source terminal. The first semiconductor switch element Q1 and the second semiconductor switch element Q2 have parasitic capacitance between the first main terminal (drain terminal) and the second main terminal (source terminal).

半橋變流器3中，第1半導體開關元件Q1之汲極端子連接於第1二極體D1之陰極，第1半導體開關元件Q1之源極端子連接於第2半導體開關元件Q2之汲極端子，第2半導體開關元件Q2之源極端子連接於第2二極體D2之陽極。In the half-bridge converter 3, the drain terminal of the first semiconductor switching element Q1 is connected to the cathode of the first diode D1, the source terminal of the first semiconductor switching element Q1 is connected to the drain terminal of the second semiconductor switching element Q2, and the source terminal of the second semiconductor switching element Q2 is connected to the anode of the second diode D2.

又，半橋變流器3中，第1電容器C1之第1端連接於第1半導體開關元件Q1之汲極端子及第1二極體D1之陰極，第1電容器C1之第2端連接於第2電容器C2之第1端，第2電容器C2之第2端連接於第2半導體開關元件Q2之源極端子及第2二極體D2之陽極。Furthermore, in the half-bridge converter 3, the first end of the first capacitor C1 is connected to the drain terminal of the first semiconductor switch element Q1 and the cathode of the first diode D1, the second end of the first capacitor C1 is connected to the first end of the second capacitor C2, and the second end of the second capacitor C2 is connected to the source terminal of the second semiconductor switch element Q2 and the anode of the second diode D2.

(2.6)變壓器變壓器Tr1包含一次線圈N1及二次線圈N2。變壓器Tr1中，在半橋變流器3中之第1半導體開關元件Q1與第2半導體開關元件Q2之間的第1輸出端34與半橋變流器3中之第1電容器與第2電容器之間的第2輸出端35之間，連接一次線圈N1。變壓器Tr1中，一次線圈N1之圈數大於二次線圈N2之圈數。 (2.6) Transformer Transformer Tr1 includes a primary coil N1 and a secondary coil N2. In transformer Tr1, the primary coil N1 is connected between the first output terminal 34 between the first semiconductor switch element Q1 and the second semiconductor switch element Q2 in the half-bridge converter 3 and the second output terminal 35 between the first capacitor and the second capacitor in the half-bridge converter 3. In transformer Tr1, the number of turns of the primary coil N1 is greater than the number of turns of the secondary coil N2.

(2.7)電感器電感器L1連接在半橋變流器3之第1輸出端34與一次線圈N1之間。電感器L1不限於連接在半橋變流器3之第1輸出端34與一次線圈N1之間，例如，亦可連接在半橋變流器3之第2輸出端35與一次線圈N1之間。電感器L1係與變壓器Tr1不同之電感器(電子零件)，但不限於此，亦可係在變壓器之等價電路中連接於一次線圈之漏電感。 (2.7) Inductor The inductor L1 is connected between the first output terminal 34 of the half-bridge converter 3 and the primary coil N1. The inductor L1 is not limited to being connected between the first output terminal 34 of the half-bridge converter 3 and the primary coil N1. For example, it can also be connected between the second output terminal 35 of the half-bridge converter 3 and the primary coil N1. The inductor L1 is an inductor (electronic component) different from the transformer Tr1, but is not limited to this. It can also be a leakage inductance connected to the primary coil in the equivalent circuit of the transformer.

(2.8)全橋變流器全橋變流器4連接於變壓器Tr1之二次線圈N2。全橋變流器4具有第3半導體開關元件Q3、第4半導體開關元件Q4、第5半導體開關元件Q5及第6半導體開關元件Q6。 (2.8) Full-bridge converter The full-bridge converter 4 is connected to the secondary coil N2 of the transformer Tr1. The full-bridge converter 4 has a third semiconductor switch element Q3, a fourth semiconductor switch element Q4, a fifth semiconductor switch element Q5, and a sixth semiconductor switch element Q6.

更詳細而言，全橋變流器4具有第3半導體開關元件Q3與第4半導體開關元件Q4之串聯電路41、第5半導體開關元件Q5與第6半導體開關元件Q6之串聯電路42，以及輸出電容器Co。第3半導體開關元件Q3與第4半導體開關元件Q4之串聯電路41，連接在第1輸出端子13與第2輸出端子14之間。第5半導體開關元件Q5與第6半導體開關元件Q6之串聯電路42，連接在第1輸出端子13與第2輸出端子14之間。輸出電容器Co連接在第1輸出端子13與第2輸出端子14之間。In more detail, the full-bridge converter 4 includes a series circuit 41 of a third semiconductor switch element Q3 and a fourth semiconductor switch element Q4, a series circuit 42 of a fifth semiconductor switch element Q5 and a sixth semiconductor switch element Q6, and an output capacitor Co. The series circuit 41 of the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4 is connected between the first output terminal 13 and the second output terminal 14. The series circuit 42 of the fifth semiconductor switch element Q5 and the sixth semiconductor switch element Q6 is connected between the first output terminal 13 and the second output terminal 14. The output capacitor Co is connected between the first output terminal 13 and the second output terminal 14.

又，全橋變流器4具有第3二極體D3、第4二極體D4、第5二極體D5及第6二極體D6。第3二極體D3與第3半導體開關元件Q3反並聯。第4二極體D4與第4半導體開關元件Q4反並聯。第5二極體D5與第5半導體開關元件Q5反並聯。第6二極體D6與第6半導體開關元件Q6反並聯。Furthermore, the full-bridge converter 4 has a third diode D3, a fourth diode D4, a fifth diode D5, and a sixth diode D6. The third diode D3 is connected in anti-parallel to the third semiconductor switch element Q3. The fourth diode D4 is connected in anti-parallel to the fourth semiconductor switch element Q4. The fifth diode D5 is connected in anti-parallel to the fifth semiconductor switch element Q5. The sixth diode D6 is connected in anti-parallel to the sixth semiconductor switch element Q6.

全橋變流器4中，第3～第6半導體開關元件Q3～Q6分別具有控制端子、第1主端子及第2主端子。第3～第6半導體開關元件Q3～Q6之控制端子連接於控制裝置5。第3～第6半導體開關元件Q3～Q6對應於控制裝置5給予之第3～第6切換信號S3～S6而開啟、關閉。第3～第6半導體開關元件Q3～Q6例如係MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor，金屬氧化物半導體場效電晶體)。更詳細而言，第3～第6半導體開關元件Q3～Q6分別係n通道MOSFET。此處，n通道MOSFET係常閉型之Si系MOSFET。第3～第6半導體開關元件Q3～Q6中，控制端子、第1主端子及第2主端子分別係閘極端子、汲極端子及源極端子。In the full-bridge converter 4, the 3rd to 6th semiconductor switch elements Q3 to Q6 have a control terminal, a first main terminal and a second main terminal, respectively. The control terminals of the 3rd to 6th semiconductor switch elements Q3 to Q6 are connected to the control device 5. The 3rd to 6th semiconductor switch elements Q3 to Q6 are turned on and off in response to the 3rd to 6th switching signals S3 to S6 given by the control device 5. The 3rd to 6th semiconductor switch elements Q3 to Q6 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). More specifically, the 3rd to 6th semiconductor switch elements Q3 to Q6 are n-channel MOSFETs, respectively. Here, the n-channel MOSFET is a normally closed Si-based MOSFET. In the third to sixth semiconductor switch elements Q3 to Q6, the control terminal, the first main terminal, and the second main terminal are respectively a gate terminal, a drain terminal, and a source terminal.

全橋變流器4中，第3半導體開關元件Q3之汲極端子連接於第1輸出端子13，第3半導體開關元件Q3之源極端子連接於第4半導體開關元件Q4之汲極端子，第4半導體開關元件Q4之源極端子連接於第2輸出端子14。In the full-bridge converter 4, the drain terminal of the third semiconductor switch element Q3 is connected to the first output terminal 13, the source terminal of the third semiconductor switch element Q3 is connected to the drain terminal of the fourth semiconductor switch element Q4, and the source terminal of the fourth semiconductor switch element Q4 is connected to the second output terminal 14.

又，全橋變流器4中，第5半導體開關元件Q5之汲極端子連接於第1輸出端子13，第5半導體開關元件Q5之源極端子連接於第6半導體開關元件Q6之汲極端子，第6半導體開關元件Q6之源極端子連接於第2輸出端子14。Furthermore, in the full-bridge converter 4, the drain terminal of the fifth semiconductor switch element Q5 is connected to the first output terminal 13, the source terminal of the fifth semiconductor switch element Q5 is connected to the drain terminal of the sixth semiconductor switch element Q6, and the source terminal of the sixth semiconductor switch element Q6 is connected to the second output terminal 14.

全橋變流器4中，第3～第6二極體D3～D6係第3～第6半導體開關元件Q3～Q6之各自的MOSFET之寄生二極體。第3～第6二極體D3～D6分別具有陽極及陰極。第3～第6二極體D3～D6之各自的陽極及陰極，分別連接於第3～第6半導體開關元件Q3～Q6之中對應的半導體開關元件之第2主端子(源極端子)及第1主端子(汲極端子)。第3～第6半導體開關元件Q3～Q6分別在第1主端子(汲極端子)與第2主端子(源極端子)之間具有寄生電容。In the full-bridge converter 4, the third to sixth diodes D3 to D6 are parasitic diodes of the MOSFETs of the third to sixth semiconductor switch elements Q3 to Q6. The third to sixth diodes D3 to D6 have an anode and a cathode, respectively. The anode and cathode of each of the third to sixth diodes D3 to D6 are connected to the second main terminal (source terminal) and the first main terminal (drain terminal) of the corresponding semiconductor switch element among the third to sixth semiconductor switch elements Q3 to Q6, respectively. The third to sixth semiconductor switch elements Q3 to Q6 have parasitic capacitances between the first main terminal (drain terminal) and the second main terminal (source terminal), respectively.

全橋變流器4具有第3半導體開關元件Q3與第4半導體開關元件Q4之間的第1輸入端44，以及第5半導體開關元件Q5與第6半導體開關元件Q6之間的第2輸入端45。全橋變流器4中，在第1輸入端44與第2輸入端45之間連接變壓器Tr1之二次線圈N2。The full-bridge converter 4 has a first input terminal 44 between the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4, and a second input terminal 45 between the fifth semiconductor switch element Q5 and the sixth semiconductor switch element Q6. In the full-bridge converter 4, the secondary coil N2 of the transformer Tr1 is connected between the first input terminal 44 and the second input terminal 45.

(2.9)控制裝置控制裝置5控制半橋變流器3及全橋變流器4。控制裝置5控制半橋變流器3之第1半導體開關元件Q1及第2半導體開關元件Q2。又，控制裝置5控制全橋變流器4之第3半導體開關元件Q3、第4半導體開關元件Q4、第5半導體開關元件Q5及第6半導體開關元件Q6。控制裝置5可分別向第1～第6半導體開關元件Q1～Q6給予第1～第6切換信號(控制信號)S1～S6。第1～第6切換信號S1～S6係施加於第1～第6半導體開關元件Q1～Q6之控制端子與第2主端子之間，以使第1～第6半導體開關元件Q1～Q6開啟、關閉之閘極電壓(閘極信號)。第1～第6切換信號S1～S6係電壓位準在高於第1～第6半導體開關元件Q1～Q6之閾值電壓(閘極閾值電壓)之電壓位準(以下亦稱為高位準)與低於閾值電壓之電壓位準(以下亦稱為低位準)之間變化之電壓。控制裝置5可改變第1～第6切換信號S1～S6之頻率。 (2.9) Control device The control device 5 controls the half-bridge converter 3 and the full-bridge converter 4. The control device 5 controls the first semiconductor switch element Q1 and the second semiconductor switch element Q2 of the half-bridge converter 3. In addition, the control device 5 controls the third semiconductor switch element Q3, the fourth semiconductor switch element Q4, the fifth semiconductor switch element Q5 and the sixth semiconductor switch element Q6 of the full-bridge converter 4. The control device 5 can provide the first to sixth switching signals (control signals) S1 to S6 to the first to sixth semiconductor switch elements Q1 to Q6, respectively. The 1st to 6th switching signals S1 to S6 are applied between the control terminal and the 2nd main terminal of the 1st to 6th semiconductor switching elements Q1 to Q6 to turn on and off the gate voltage (gate signal). The 1st to 6th switching signals S1 to S6 are voltages whose voltage levels vary between a voltage level higher than the threshold voltage (gate threshold voltage) of the 1st to 6th semiconductor switching elements Q1 to Q6 (hereinafter also referred to as a high level) and a voltage level lower than the threshold voltage (hereinafter also referred to as a low level). The control device 5 can change the frequency of the 1st to 6th switching signals S1 to S6.

控制裝置5例如圖2所示，將控制第1半導體開關元件Q1之第1切換信號S1之工作週期設為50％，並將控制第2半導體開關元件Q2之第2切換信號S2之工作週期設為50％。第1切換信號S1之工作週期，係在第1切換信號S1之1週期中，高位準之期間相對於高位準之期間與低位準之期間的合計時間之比例。又，第2切換信號S2之工作週期，係在第2切換信號S2之1週期中，高位準之期間相對於高位準之期間與低位準之期間的合計時間之比例。As shown in FIG. 2, the control device 5 sets the duty cycle of the first switching signal S1 for controlling the first semiconductor switch element Q1 to 50%, and sets the duty cycle of the second switching signal S2 for controlling the second semiconductor switch element Q2 to 50%. The duty cycle of the first switching signal S1 is the ratio of the high-level period to the total time of the high-level period and the low-level period in one cycle of the first switching signal S1. In addition, the duty cycle of the second switching signal S2 is the ratio of the high-level period to the total time of the high-level period and the low-level period in one cycle of the second switching signal S2.

控制裝置5例如在來自交流電源8之輸入電壓Vin之極性為正(如圖1之箭頭方向所示，第1交流輸出端81相較於第2交流輸出端82為高電位之方向)時，如圖3所示，輸出以重複第1開啟期間(圖3中之第1期間T1)、停滯期間Td、第2開啟期間(圖3中之第2期間T2及第3期間T3合計之期間)、停滯期間Td之方式生成之第1切換信號S1及第2切換信號S2。第1開啟期間係將第1切換信號S1及第2切換信號S2之中的第1切換信號S1設為高位準，並將第2切換信號S2設為低位準之期間。第1期間T1係輸入電感器Lin之充電期間。停滯期間Td係將第1切換信號S1及第2切換信號S2之雙方設為低位準之期間。第2開啟期間係將第1切換信號S1及第2切換信號S2之中的第1切換信號S1設為低位準並將第2切換信號S2設為高位準之期間。第2期間T2係輸入電感器Lin之放電期間。第3期間T3係電流不流向輸入電感器Lin之零電流期間。For example, when the polarity of the input voltage Vin from the AC power source 8 is positive (as shown by the arrow direction in FIG. 1, the first AC output terminal 81 is in a direction of high potential relative to the second AC output terminal 82), the control device 5 outputs the first switching signal S1 and the second switching signal S2 generated by repeating the first opening period (the first period T1 in FIG. 3), the stagnation period Td, the second opening period (the period of the second period T2 and the third period T3 in FIG. 3), and the stagnation period Td, as shown in FIG. 3. The first opening period is a period in which the first switching signal S1 is set to a high level and the second switching signal S2 is set to a low level. The first period T1 is a charging period of the input inductor Lin. The stagnation period Td is a period in which both the first switching signal S1 and the second switching signal S2 are set to a low level. The second opening period is a period in which the first switching signal S1 of the first switching signal S1 and the second switching signal S2 is set to a low level and the second switching signal S2 is set to a high level. The second period T2 is a discharging period of the input inductor Lin. The third period T3 is a zero current period in which no current flows to the input inductor Lin.

又，控制裝置5例如圖2所示，將控制第3半導體開關元件Q3之第3切換信號S3之工作週期設為50％。又，控制裝置5將控制第4半導體開關元件Q4之第4切換信號S4之工作週期設為50％。又，控制裝置5將控制第5半導體開關元件Q5之第5切換信號S5之工作週期設為50％。又，控制裝置5將控制第6半導體開關元件Q6之第6切換信號S6之工作週期設為50％。第3～第6切換信號S3～S6之各自的工作週期，係在第3～第6切換信號S3～S6之1週期中，高位準之期間相對於高位準之期間與低位準之期間之合計時間之比例。Furthermore, the control device 5 sets the duty cycle of the third switching signal S3 for controlling the third semiconductor switch element Q3 to 50%, as shown in FIG. 2. Furthermore, the control device 5 sets the duty cycle of the fourth switching signal S4 for controlling the fourth semiconductor switch element Q4 to 50%. Furthermore, the control device 5 sets the duty cycle of the fifth switching signal S5 for controlling the fifth semiconductor switch element Q5 to 50%. Furthermore, the control device 5 sets the duty cycle of the sixth switching signal S6 for controlling the sixth semiconductor switch element Q6 to 50%. The duty cycle of each of the third to sixth switching signals S3 to S6 is the ratio of the high-level period to the total time of the high-level period and the low-level period in one cycle of the third to sixth switching signals S3 to S6.

圖2中，表示第1～第6切換信號S1～S6與半橋變流器3之輸出電壓V1與全橋變流器4之輸入電壓V2之關係。半橋變流器3之輸出電壓V1係以第2輸出端35之電位為基準電位時之第1輸出端34與第2輸出端35之間的電壓。全橋變流器4之輸入電壓V2係以第2輸入端45之電位為基準電位時之第1輸入端44與第2輸入端45之間的電壓。FIG2 shows the relationship between the first to sixth switching signals S1 to S6, the output voltage V1 of the half-bridge converter 3, and the input voltage V2 of the full-bridge converter 4. The output voltage V1 of the half-bridge converter 3 is the voltage between the first output terminal 34 and the second output terminal 35 when the potential of the second output terminal 35 is used as the reference potential. The input voltage V2 of the full-bridge converter 4 is the voltage between the first input terminal 44 and the second input terminal 45 when the potential of the second input terminal 45 is used as the reference potential.

圖3中，圖示來自交流電源8之輸入電壓Vin之極性為正(如圖1之箭頭方向所示，第1交流輸出端81相較於第2交流輸出端82為高電位之方向)時之第1切換信號S1及第2切換信號S2與流向輸入電感器Lin之電流i _L與半橋變流器3之輸出電壓V1之關係。 FIG3 shows the relationship between the first switching signal S1 and the second switching signal S2, the current i L flowing to the input inductor Lin, and the output voltage _V1 of the half-bridge converter 3 when the polarity of the input voltage Vin from the AC power source 8 is positive (as shown by the direction of the arrow in FIG1 , the first AC output terminal 81 is in the direction of a high potential compared to the second AC output terminal 82).

圖4A、4B及4C，分別係圖3之第1期間T1、第2期間T2及第3期間T3之動作說明圖。圖4A及4B中，以細虛線表示流向輸入電感器Lin之電流i _L(參照圖5)之電流路徑。第1期間T1中，於輸入電感器Lin蓄積能量。第2期間T2中，放出輸入電感器Lin之能量。第3期間T3係使流向輸入電感器Lin之電流為零之期間，故圖4C中未圖示流向輸入電感器Lin之電流i _L。又，圖4A、4B及4C中，以粗虛線表示流向變壓器Tr1之一次線圈N1之電流i1(流向電感器L1之電流i1)。 Figs. 4A, 4B and 4C are respectively diagrams for explaining the operation of the first period T1, the second period T2 and the third period T3 of Fig. 3. In Figs. 4A and 4B, the current path of the current i _L (refer to Fig. 5) flowing to the input inductor Lin is indicated by a thin dashed line. In the first period T1, energy is accumulated in the input inductor Lin. In the second period T2, the energy of the input inductor Lin is released. The third period T3 is a period in which the current flowing to the input inductor Lin is made zero, so the current i _L flowing to the input inductor Lin is not shown in Fig. 4C. In addition, in Figs. 4A, 4B and 4C, the current i1 flowing to the primary coil N1 of the transformer Tr1 (the current i1 flowing to the inductor L1) is indicated by a thick dashed line.

圖3之第1期間T1中，第1半導體開關元件Q1開啟，第2半導體開關元件Q2關閉，故如圖4A所示，電流i _L以輸入電感器Lin－第1二極體D1－第1半導體開關元件Q1－連接點33之路徑流向輸入電感器Lin。圖3之第1期間T1中，如圖3所示，隨著第1期間T1之開始時間點後之時間經過，流向輸入電感器Lin之電流i _L增加而在輸入電感器Lin蓄積能量。又，圖3之第1期間T1中，如圖4A所示，電流i1以第1電容器C1－第1半導體開關元件Q1－電感器L1－一次線圈N1－第1電容器C1之路徑流動。 In the first period T1 of FIG. 3 , the first semiconductor switch element Q1 is turned on and the second semiconductor switch element Q2 is turned off, so as shown in FIG. 4A , the current i _L flows to the input inductor Lin via the path of input inductor Lin-first diode D1-first semiconductor switch element Q1-connection point 33. In the first period T1 of FIG. 3 , as shown in FIG. 3 , as time passes after the start time point of the first period T1, the current i _L flowing to the input inductor Lin increases and energy is accumulated in the input inductor Lin. In addition, in the first period T1 of FIG. 3 , as shown in FIG. 4A , the current i1 flows via the path of first capacitor C1-first semiconductor switch element Q1-inductor L1-primary coil N1-first capacitor C1.

在從第1期間T1之結束時間點經過停滯期間Td後之時間點，第2半導體開關元件Q2之兩端電壓降低至零伏特。藉此，第2半導體開關元件Q2在第2期間T2之開始時進行零伏特切換。圖3之第2期間T2中，第1半導體開關元件Q1關閉，第2半導體開關元件Q2開啟，故如圖4B所示，電流i _L以輸入電感器Lin－第1二極體D1－第1電容器C1－第2電容器C2－第2半導體開關元件Q2－連接點33之路徑流動。此時，輸入電感器Lin之蓄積能量從輸入電感器Lin放出，並隨著第2期間T2之開始時間點後之時間經過，電流i _L減少至零。又，圖3之第2期間T2中，電流i1以第2電容器C2－一次線圈N1－電感器L1－第1輸出端34－第2半導體開關元件Q2－第2電容器C2之路徑流動。 At a time point after the stagnation period Td from the end time point of the first period T1, the voltage across the second semiconductor switch element Q2 drops to zero volts. Thus, the second semiconductor switch element Q2 performs zero volt switching at the beginning of the second period T2. In the second period T2 of FIG. 3 , the first semiconductor switch element Q1 is turned off and the second semiconductor switch element Q2 is turned on, so as shown in FIG. 4B , the current i _L flows along the path of the input inductor Lin - the first diode D1 - the first capacitor C1 - the second capacitor C2 - the second semiconductor switch element Q2 - the connection point 33. At this time, the stored energy of the input inductor Lin is released from the input inductor Lin, and as time passes after the start time point of the second period T2, the current i _L decreases to zero. In the second period T2 of FIG. 3 , the current i1 flows along the path of the second capacitor C2 - primary coil N1 - inductor L1 - first output terminal 34 - second semiconductor switch element Q2 - second capacitor C2.

圖3之第3期間T3中，電流i1以第2電容器C2－一次線圈N1－電感器L1－第1輸出端34－第2半導體開關元件Q2－第2電容器C2之路徑流動。In the third period T3 of FIG. 3 , the current i1 flows through the path of the second capacitor C2 - the primary coil N1 - the inductor L1 - the first output terminal 34 - the second semiconductor switch element Q2 - the second capacitor C2.

圖6中，圖示來自交流電源8之輸入電壓Vin之極性為負時之第1切換信號S1及第2切換信號S2與流向輸入電感器Lin之電流i _L與半橋變流器3之輸出電壓V1之關係。 FIG6 shows the relationship between the first switching signal S1 and the second switching signal S2, the current i _L flowing to the input inductor Lin, and the output voltage V1 of the half-bridge converter 3 when the polarity of the input voltage Vin from the AC power source 8 is negative.

控制裝置5在來自交流電源8之輸入電壓Vin之極性為負時，如圖6所示，輸出以重複第3開啟期間(圖6中之第4期間T11)、停滯期間Td、第4開啟期間(圖3中之第5期間T12與第6期間T13之合計期間)、停滯期間Td之方式生成之第1切換信號S1及第2切換信號S2。第3開啟期間係將第1切換信號S1及第2切換信號S2之中的第2切換信號S2設為高位準，並將第1切換信號S1設為低位準之期間。第4期間T11係輸入電感器Lin之充電期間。停滯期間Td係將第1切換信號S1及第2切換信號S2之雙方設為低位準之期間。第4開啟期間係將第1切換信號S1及第2切換信號S2之中的第1切換信號S1設為高位準，並將第2切換信號S2設為低位準之期間。第5期間T12係輸入電感器Lin之放電期間。第6期間T13係電流不流向輸入電感器Lin之零電流期間。When the polarity of the input voltage Vin from the AC power source 8 is negative, the control device 5 outputs the first switching signal S1 and the second switching signal S2 generated by repeating the third opening period (the fourth period T11 in FIG. 6), the stagnation period Td, the fourth opening period (the total period of the fifth period T12 and the sixth period T13 in FIG. 3), and the stagnation period Td as shown in FIG. 6. The third opening period is a period in which the second switching signal S2 of the first switching signal S1 and the second switching signal S2 is set to a high level and the first switching signal S1 is set to a low level. The fourth period T11 is a charging period of the input inductor Lin. The stagnation period Td is a period in which both the first switching signal S1 and the second switching signal S2 are set to a low level. The fourth opening period is a period in which the first switching signal S1 of the first switching signal S1 and the second switching signal S2 is set to a high level and the second switching signal S2 is set to a low level. The fifth period T12 is a discharge period of the input inductor Lin. The sixth period T13 is a zero current period in which no current flows to the input inductor Lin.

圖7A、7B及7C分別係圖6之第4期間T11、第5期間T12及第6期間T13之動作說明圖。圖7A及7B中，以細虛線表示流向輸入電感器Lin之電流i _L之電流路徑。第6期間T13係使流向輸入電感器Lin之電流為零之期間，故圖7C中未圖示流向輸入電感器Lin之電流i _L。又，圖7A、7B及7C中，以粗虛線表示流向電感器L1之電流i1。 Figs. 7A, 7B and 7C are respectively diagrams for explaining the operation of the fourth period T11, the fifth period T12 and the sixth period T13 of Fig. 6. In Figs. 7A and 7B, the current path of the current i _L flowing to the input inductor Lin is indicated by a thin dashed line. The sixth period T13 is a period in which the current flowing to the input inductor Lin is made zero, so the current i _L flowing to the input inductor Lin is not shown in Fig. 7C. In addition, in Figs. 7A, 7B and 7C, the current i1 flowing to the inductor L1 is indicated by a thick dashed line.

圖6之第4期間T11中，第1半導體開關元件Q1關閉，第2半導體開關元件Q2開啟，故如圖7A所示，電流i _L以第2半導體開關元件Q2－第2二極體D2－輸入電感器Lin之路徑流向輸入電感器Lin。又，第4期間T11中，電流i1以第2電容器C2－一次線圈N1－電感器L1－第2半導體開關元件Q2－第2電容器C2之路徑流動。 In the fourth period T11 of FIG6 , the first semiconductor switch element Q1 is turned off and the second semiconductor switch element Q2 is turned on, so as shown in FIG7A , the current i _L flows to the input inductor Lin via the second semiconductor switch element Q2 - the second diode D2 - the input inductor Lin. In addition, in the fourth period T11, the current i1 flows via the second capacitor C2 - the primary coil N1 - the inductor L1 - the second semiconductor switch element Q2 - the second capacitor C2.

在從第4期間T11之結束時間點經過停滯期間Td後之時間點，第1半導體開關元件Q1之兩端電壓降低至零伏特。藉此，第1半導體開關元件Q1在第5期間T12之開始時進行零伏特切換。At a time point after a stagnation period Td from the end time point of the fourth period T11, the voltage across the first semiconductor switch element Q1 drops to zero volts. As a result, the first semiconductor switch element Q1 performs zero volt switching at the beginning of the fifth period T12.

圖6之第5期間T12中，第1半導體開關元件Q1開啟，第2半導體開關元件Q2關閉，故如圖7B所示，電流i _L以第1半導體開關元件Q1－第1電容器C1－第2電容器C2－第2二極體D2－輸入電感器Lin之路徑流向輸入電感器Lin。又，圖6之第5期間T12中，電流i1以第1電容器C1－第1半導體開關元件Q1－電感器L1－一次線圈N1－第1電容器C1之路徑流動。 In the fifth period T12 of FIG. 6 , the first semiconductor switch element Q1 is turned on and the second semiconductor switch element Q2 is turned off, so as shown in FIG. 7B , the current i _L flows to the input inductor Lin via the path of the first semiconductor switch element Q1 - the first capacitor C1 - the second capacitor C2 - the second diode D2 - the input inductor Lin. In addition, in the fifth period T12 of FIG. 6 , the current i1 flows via the path of the first capacitor C1 - the first semiconductor switch element Q1 - the inductor L1 - the primary coil N1 - the first capacitor C1.

圖6之第6期間T13如圖7C所示，電流i1以第1電容器C1－第1半導體開關元件Q1－電感器L1－一次線圈N1－第1電容器C1之路徑流動。In the sixth period T13 of FIG. 6 , as shown in FIG. 7C , the current i1 flows in the path of the first capacitor C1 - the first semiconductor switch element Q1 - the inductor L1 - the primary coil N1 - the first capacitor C1 .

控制裝置5例如圖5所示，以使流向輸入電感器Lin之電流i _L之模式為電流不連續模式之方式控制第1半導體開關元件Q1及第2半導體開關元件Q2。圖5中，亦圖示從交流電源8流向轉換裝置1之輸入電流Iin之波形。 The control device 5 controls the first semiconductor switch element Q1 and the second semiconductor switch element Q2 so that the mode of the current i _L flowing to the input inductor Lin is the current discontinuous mode as shown in Fig. 5. Fig. 5 also shows the waveform of the input current Iin flowing from the AC power source 8 to the conversion device 1.

轉換裝置1中，將輸入電感器Lin之電感設為L _in，並將流向輸入電感器Lin之電流i _L之波峰值設為i _Lmax時，i _Lmax以式(1)表示。 [數1] In the converter 1, when the inductance of the input inductor Lin is set to _Lin , and the peak value of the current _iL flowing through the input inductor Lin is set to _iLmax , _iLmax is expressed by equation (1). [Figure 1]

從而，轉換裝置1中，第1期間T1及電感Lin分別為固定時，電流i _L之波峰值i _Lmax與輸入電壓Vin之瞬時值成比例變化，故可提升功率因數。 Therefore, in the conversion device 1, when the first period T1 and the inductance Lin are fixed, the peak value i _Lmax of the current i _L changes in proportion to the instantaneous value of the input voltage Vin, thereby improving the power factor.

又，控制裝置5控制半橋變流器3之直流母線電壓Vdc(參照圖1)，並控制全橋變流器4之輸出電壓Vo(參照圖1)。直流母線電壓Vdc係第1電容器C1與第2電容器C2之第2串聯電路32的兩端電壓。Furthermore, the control device 5 controls the DC bus voltage Vdc (see FIG. 1 ) of the half-bridge converter 3 and controls the output voltage Vo (see FIG. 1 ) of the full-bridge converter 4. The DC bus voltage Vdc is the voltage across the second series circuit 32 of the first capacitor C1 and the second capacitor C2.

將從交流電源8至轉換裝置1之輸入電壓Vin之最大值(波峰值)設為V _max，將轉換裝置1之輸出功率設為Po，將半橋變流器3之切換週期設為Tsw(參照圖3及圖5)，將半橋變流器3之切換週期Tsw中之開啟時間(分別將第1切換信號S1及第2切換信號S2設為高位準之期間)設為Ton(＝T1)，並將輸入電感器Lin之電感設為L _in時，直流母線電壓Vdc以式(2)表示。 [數2] When the maximum value (peak value) of the input voltage Vin from the AC power source 8 to the conversion device 1 is set to V _max , the output power of the conversion device 1 is set to Po , the switching period of the half-bridge converter 3 is set to Tsw (refer to FIG. 3 and FIG. 5 ), the opening time (the period during which the first switching signal S1 and the second switching signal S2 are set to high level, respectively) in the switching period Tsw of the half-bridge converter 3 is set to Ton (= T1), and the inductance of the input inductor Lin is set to _Lin , the DC bus voltage Vdc is expressed by formula (2). [Formula 2]

轉換裝置1中，控制裝置5將第1切換信號S1及第2切換信號S2之各自的工作週期設為50％，故輸出功率Po為固定時，可使直流母線電壓Vdc為固定。In the conversion device 1, the control device 5 sets the respective duty cycles of the first switching signal S1 and the second switching signal S2 to 50%, so that when the output power Po is fixed, the DC bus voltage Vdc can be kept fixed.

又，控制裝置5透過基於全橋變流器4之輸出電壓指令值Vo ^＊及全橋變流器4之輸出電壓Vo之檢測值之PI控制，控制半橋變流器3之輸出電壓V1與全橋變流器4之輸入電壓V2之相位差θ ₁(參照圖2)。半橋變流器3之輸出電壓V1與全橋變流器4之輸入電壓V2之相位差θ ₁，和第1切換信號S1與第3切換信號S3之相位差θ(參照圖2)相同。 Furthermore, the control device 5 controls the phase difference θ 1 (see FIG. 2 ) between the output voltage V1 of the half-bridge converter ³ and the input voltage V2 of the full-bridge converter 4 through PI control based on the output voltage command value Vo* of the full-bridge converter 4 and the detection value of the output voltage Vo of the full-bridge converter 4. The phase difference θ ₁ between the output voltage V1 of the half-bridge converter 3 and the input voltage V2 of the full-bridge converter ₄ is the same as the phase difference θ (see FIG. 2 ) between the first switching signal S1 and the third switching signal S3.

將轉換裝置1之輸出功率設為Po，將變壓器Tr1之一次線圈N1之圈數設為n ₁，將二次線圈N2之圈數設為n ₂，將電感器L1之電感設為L ₁，並將相位差θ換算成弧度單位之值設為δ時，輸出功率Po以式(3)表示。 [數3] When the output power of the converter 1 is set to Po, the number of turns of the primary coil N1 of the transformer Tr1 is set to n ₁ , the number of turns of the secondary coil N2 is set to n ₂ , the inductance of the inductor L1 is set to L ₁ , and the value of the phase difference θ converted into radians is set to δ, the output power Po is expressed by equation (3). [Equation 3]

控制裝置5如圖1所示，具有第1減算部51、第1PI控制部52及生成部55。第1減算部51求出輸出電壓指令值Vo ^＊與輸出電壓Vo之差分電壓值。第1PI控制部52生成相位差指令值θ ^＊，其係用於進行使第1減算部51所求出之差分值趨近於零之回饋控制。藉此，控制裝置5以減小輸出電壓指令值Vo ^＊與輸出電壓Vo之差分電壓值之方式控制半橋變流器3及全橋變流器4。更詳細而言，生成部55以使第1切換信號S1與第3切換信號S3之相位差θ之值成為相位差指令值θ ^＊之值之方式生成第1切換信號S1及第3切換信號S3，並基於第1切換信號S1生成第2切換信號S2，並基於第3切換信號S3生成第4～第6切換信號S4～S6。輸出電壓指令值Vo ^＊係透過與控制裝置5亦即第1控制裝置5不同之第2控制裝置對於第1控制裝置5之第1外部指令，而在第1控制裝置5中決定。換言之，第1控制裝置5具有基於來自第2控制裝置之第1外部指令而生成輸出電壓指令值Vo ^＊之機能。或者，透過程式將輸出電壓指令值Vo ^＊預先儲存於第1控制裝置5。 As shown in FIG1 , the control device 5 includes a first subtraction unit 51, a first PI control unit 52, and a generation unit 55. The first subtraction unit 51 obtains a differential voltage value between the output voltage command value Vo ^* and the output voltage Vo. The first PI control unit 52 generates a phase difference command value θ ^* , which is used to perform feedback control to make the differential value obtained by the first subtraction unit 51 approach zero. In this way, the control device 5 controls the half-bridge converter 3 and the full-bridge converter 4 in a manner to reduce the differential voltage value between the output voltage command value Vo ^* and the output voltage Vo. In more detail, the generator 55 generates the first switching signal S1 and the third switching signal S3 in such a manner that the value of the phase difference θ between the first switching signal S1 and the third switching signal S3 becomes the value of the phase difference command value θ ^* , generates the second switching signal S2 based on the first switching signal S1, and generates the fourth to sixth switching signals S4 to S6 based on the third switching signal S3. The output voltage command value Vo ^* is determined in the first control device 5 by the first external command to the first control device 5 from the second control device different from the control device 5, that is, the first control device 5. In other words, the first control device 5 has a function of generating the output voltage command value Vo ^* based on the first external command from the second control device. Alternatively, the output voltage command value Vo ^* is pre-stored in the first control device 5 through a program.

第1外部指令例如係關於轉換裝置1之輸出電壓Vo之指令。作為第2控制裝置對於第1控制裝置5之第1外部指令之通信中之通信協定，例如可利用MODBUS或CAN或其他序列通信協定。第2控制裝置例如可係外部控制器。第2控制裝置對於第1控制裝置5之外部指令之通信並非必須利用通信協定。又，第2控制裝置亦可係安裝在與第1控制裝置5相同之基板上之其他系統微電腦。The first external command is, for example, a command regarding the output voltage Vo of the conversion device 1. As a communication protocol in the communication of the first external command of the second control device to the first control device 5, for example, MODBUS or CAN or other serial communication protocols can be used. The second control device can be, for example, an external controller. The communication of the external command of the second control device to the first control device 5 does not necessarily have to use a communication protocol. In addition, the second control device can also be another system microcomputer installed on the same substrate as the first control device 5.

又，轉換裝置1中，將第1半導體開關元件Q1及第2半導體開關元件Q2之切換週期Tsw設為固定時，若連接於轉換裝置1之負荷之變動等造成輸出功率Po變動，從上述式(2)可知，直流母線電壓Vdc會產生變動。例如，如圖8所示，切換頻率fsw(＝1／Tsw)為50kHz時，若輸出功率從100W降低，直流母線電壓Vdc會從直流母線電壓指令值Vdc ^＊上升。 Furthermore, in the converter 1, when the switching period Tsw of the first semiconductor switch element Q1 and the second semiconductor switch element Q2 is fixed, if the output power Po changes due to changes in the load connected to the converter 1, it can be seen from the above formula (2) that the DC bus voltage Vdc will change. For example, as shown in FIG8, when the switching frequency fsw (=1/Tsw) is 50kHz, if the output power decreases from 100W, the DC bus voltage Vdc will increase from the DC bus voltage command value Vdc ^* .

故，控制裝置5透過基於半橋變流器3之直流母線電壓指令值Vdc ^＊及半橋變流器3之直流母線電壓Vdc之檢測值之PI控制，控制第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw。又，控制裝置5將第3半導體開關元件Q3、第4半導體開關元件Q4、第5半導體開關元件Q5及第6半導體開關元件Q6之切換頻率設為與第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw相同。亦即，轉換裝置1中，控制裝置5對第1～第6半導體開關元件Q1～Q6進行PFM(Pulse Frequency Modulation，脈波頻率調變)控制而控制直流母線電壓Vdc。 Therefore, the control device 5 controls the switching frequency fsw of the first semiconductor switching element Q1 and the second semiconductor switching element Q2 through PI control based on the DC bus voltage command value Vdc ^* of the half-bridge converter 3 and the detection value of the DC bus voltage Vdc of the half-bridge converter 3. In addition, the control device 5 sets the switching frequency of the third semiconductor switching element Q3, the fourth semiconductor switching element Q4, the fifth semiconductor switching element Q5 and the sixth semiconductor switching element Q6 to be the same as the switching frequency fsw of the first semiconductor switching element Q1 and the second semiconductor switching element Q2. That is, in the converter 1, the control device 5 performs PFM (Pulse Frequency Modulation) control on the first to sixth semiconductor switch elements Q1 to Q6 to control the DC bus voltage Vdc.

控制裝置5具有第2減算部53及第2PI控制部54。第2減算部53求出直流母線電壓指令值Vdc ^＊與直流母線電壓Vdc之差分電壓值。第2PI控制部54生成切換頻率指令值fsw ^＊，其係用於進行使第2減算部53所求出之差分電壓值趨近於零之回饋控制。藉此，控制裝置5以減小直流母線電壓指令值Vdc ^＊與直流母線電壓Vdc之差分電壓值之方式控制半橋變流器3及全橋變流器4。更詳細而言，控制裝置5將第1～第6切換信號S1～S6之切換頻率fsw之值變更為切換頻率指令值fsw ^＊之值。直流母線電壓指令值Vdc ^＊係透過第2控制裝置對於第1控制裝置5之第2外部指令而在第1控制裝置5中決定。換言之，第1控制裝置5具有基於來自第2控制裝置之第2外部指令而生成直流母線電壓指令值Vdc ^＊之機能。 The control device 5 has a second subtraction unit 53 and a second PI control unit 54. The second subtraction unit 53 obtains a differential voltage value between the DC bus voltage command value Vdc ^* and the DC bus voltage Vdc. The second PI control unit 54 generates a switching frequency command value fsw ^* , which is used to perform feedback control to make the differential voltage value obtained by the second subtraction unit 53 approach zero. In this way, the control device 5 controls the half-bridge converter 3 and the full-bridge converter 4 in a manner to reduce the differential voltage value between the DC bus voltage command value Vdc ^* and the DC bus voltage Vdc. In more detail, the control device 5 changes the value of the switching frequency fsw of the first to sixth switching signals S1 to S6 to the value of the switching frequency command value fsw ^* . The DC bus voltage command value Vdc ^* is determined in the first control device 5 by the second external command from the second control device to the first control device 5. In other words, the first control device 5 has a function of generating the DC bus voltage command value Vdc ^* based on the second external command from the second control device.

第2外部指令例如係關於轉換裝置1之直流母線電壓Vdc之指令。作為第2控制裝置對於第1控制裝置5之第2外部指令之通信中之通信協定，例如可利用MODBUS或CAN或其他序列通信協定。第2控制裝置例如可係外部控制器。第2控制裝置對於第1控制裝置5之第2外部指令之通信，並非必須利用通信協定。The second external command is, for example, a command regarding the DC bus voltage Vdc of the conversion device 1. As a communication protocol in the communication of the second external command from the second control device to the first control device 5, for example, MODBUS or CAN or other serial communication protocols can be used. The second control device can be, for example, an external controller. The communication of the second external command from the second control device to the first control device 5 does not necessarily have to use a communication protocol.

轉換裝置1中，控制裝置5透過基於直流母線電壓指令值Vdc ^＊及直流母線電壓Vdc之檢測值之PI控制，控制第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw，藉此，即使負荷變動等造成轉換裝置1之輸出功率Po變動，依然可進行使直流母線電壓Vdc接近直流母線電壓指令值Vdc ^＊之值之控制。 In the converter 1, the control device 5 controls the switching frequency fsw of the first semiconductor switch element Q1 and the second semiconductor switch element Q2 through PI control based on the DC bus voltage command value Vdc ^* and the detection value of the DC bus voltage Vdc. Thus, even if the output power Po of the converter 1 changes due to load changes, the DC bus voltage Vdc can still be controlled to be close to the value of the DC bus voltage command value Vdc ^* .

控制裝置5之執行主體包含電腦系統。電腦系統具有一個或複數之電腦。電腦系統之主要構成為作為硬體之處理器及記憶體。藉由處理器執行儲存於電腦系統之記憶體之程式，實現作為本發明中之控制裝置5之執行主體之機能。程式可預先儲存於電腦系統之記憶體，亦可經由電氣通信網路提供，亦可儲存於電腦系統可讀取之記憶卡、光碟、硬碟(磁碟)等非暫時性記錄媒體而提供。電腦系統之處理器係由包含半導體積體電路(IC)或大規模積體電路(LSI)之一個至複數個電子電路構成。複數之電子電路可集中於一個晶片，亦可分散設於複數之晶片。複數之晶片可集中於一個裝置，亦可分散設於複數之裝置。The execution body of the control device 5 includes a computer system. The computer system has one or more computers. The main components of the computer system are a processor and a memory as hardware. The function of the execution body of the control device 5 in the present invention is realized by the processor executing the program stored in the memory of the computer system. The program can be pre-stored in the memory of the computer system, or provided via an electrical communication network, or stored in a non-temporary recording medium such as a memory card, optical disk, hard disk (disk) readable by the computer system. The processor of the computer system is composed of one to multiple electronic circuits including a semiconductor integrated circuit (IC) or a large-scale integrated circuit (LSI). Multiple electronic circuits can be concentrated in one chip or dispersed in multiple chips. Multiple chips can be concentrated in one device or dispersed in multiple devices.

(3)轉換裝置之特性例圖9表示輸入電壓Vin、輸入電流Iin、電流i _L、輸出電壓V1、電流i1、輸入電壓V2及電流i2之各自的波形。電流i2係流向變壓器Tr1之二次線圈N2之電流。圖9中，例示在轉換裝置1之動作中因負荷變動而使輸出功率Po從100W變動至50W之情況。 (3) Example of characteristics of the conversion device FIG9 shows the waveforms of the input voltage Vin, the input current Iin, the current _iL , the output voltage V1, the current i1, the input voltage V2, and the current i2. The current i2 is the current flowing to the secondary coil N2 of the transformer Tr1. FIG9 shows an example of the output power Po changing from 100W to 50W due to load changes during the operation of the conversion device 1.

圖10A係將輸出功率Po為100W時之橫軸放大後之圖，並表示輸入電壓Vin、電流i _L、輸出電壓V1、電流i1、輸入電壓V2及電流i2之各自的波形。又，圖10B係將輸出功率Po為50W時之橫軸放大後之圖，並表示輸入電壓Vin、電流i _L、輸出電壓V1、電流i1、輸入電壓V2及電流i2之各自的波形。 FIG10A is a diagram in which the horizontal axis is enlarged when the output power Po is 100 W, and shows the waveforms of the input voltage Vin, the current i _L , the output voltage V1, the current i1, the input voltage V2, and the current i2. FIG10B is a diagram in which the horizontal axis is enlarged when the output power Po is 50 W, and shows the waveforms of the input voltage Vin, the current i _L , the output voltage V1, the current i1, the input voltage V2, and the current i2.

從圖10A及10B可知，輸出功率Po為100W時之情況與為50W時之情況，輸出電壓V1之一週期的長度不同，且輸出電壓V1之波峰值相同。輸出功率Po為100W時之切換頻率fsw例如係60kHz，輸出功率Po為50W時之切換頻率fsw例如係100kHz。輸出功率Po為100W時之輸出電壓V1之一週期的長度係16.4μs，輸出功率Po為50W時之輸出電壓V1之一週期的長度係10μs。As can be seen from Figures 10A and 10B, the length of one cycle of the output voltage V1 is different when the output power Po is 100W and when it is 50W, and the peak value of the output voltage V1 is the same. The switching frequency fsw when the output power Po is 100W is, for example, 60kHz, and the switching frequency fsw when the output power Po is 50W is, for example, 100kHz. The length of one cycle of the output voltage V1 when the output power Po is 100W is 16.4μs, and the length of one cycle of the output voltage V1 when the output power Po is 50W is 10μs.

(4)總結依實施態樣1之轉換裝置1，具備整流器2、半橋變流器3、輸入電感器Lin、變壓器Tr1、全橋變流器4、電感器L1及控制裝置5。整流器2係由第1二極體D1及串聯於第1二極體D1之第2二極體D2構成。整流器2中，交流電源8之第1交流輸出端81連接於第1二極體D1與第2二極體D2之連接點21。半橋變流器3具有第1半導體開關元件Q1與第2半導體開關元件Q2之第1串聯電路31，以及第1電容器C1與第2電容器C2之第2串聯電路32。第2串聯電路32與第1串聯電路31並聯。半橋變流器3中，第1半導體開關元件Q1連接於第1二極體D1之陰極，第2半導體開關元件Q2連接於第2二極體D2之陽極。半橋變流器3中，交流電源8之第2交流輸出端82連接於第1半導體開關元件Q1與第2半導體開關元件Q2之連接點33。輸入電感器Lin連接在交流電源8與整流器2之間。變壓器Tr1包含一次線圈N1及二次線圈N2。變壓器Tr1中，在半橋變流器3中之第1半導體開關元件Q1與第2半導體開關元件Q2之間的第1輸出端34與半橋變流器3中之第1電容器C1與第2電容器C2之間的第2輸出端35之間，連接一次線圈N1。全橋變流器4連接於變壓器Tr1之二次線圈N2。全橋變流器4具有第3半導體開關元件Q3、第4半導體開關元件Q4、第5半導體開關元件Q5及第6半導體開關元件Q6。電感器L1連接在半橋變流器3之第1輸出端34或第2輸出端35與一次線圈N1之間。控制裝置5控制半橋變流器3及全橋變流器4。 (4) Summary According to the conversion device 1 of the embodiment 1, there is a rectifier 2, a half-bridge converter 3, an input inductor Lin, a transformer Tr1, a full-bridge converter 4, an inductor L1 and a control device 5. The rectifier 2 is composed of a first diode D1 and a second diode D2 connected in series with the first diode D1. In the rectifier 2, the first AC output terminal 81 of the AC power source 8 is connected to the connection point 21 between the first diode D1 and the second diode D2. The half-bridge converter 3 has a first series circuit 31 of a first semiconductor switch element Q1 and a second semiconductor switch element Q2, and a second series circuit 32 of a first capacitor C1 and a second capacitor C2. The second series circuit 32 is connected in parallel with the first series circuit 31. In the half-bridge converter 3, the first semiconductor switch element Q1 is connected to the cathode of the first diode D1, and the second semiconductor switch element Q2 is connected to the anode of the second diode D2. In the half-bridge converter 3, the second AC output terminal 82 of the AC power source 8 is connected to the connection point 33 between the first semiconductor switch element Q1 and the second semiconductor switch element Q2. The input inductor Lin is connected between the AC power source 8 and the rectifier 2. The transformer Tr1 includes a primary coil N1 and a secondary coil N2. In transformer Tr1, a primary coil N1 is connected between a first output terminal 34 between a first semiconductor switching element Q1 and a second semiconductor switching element Q2 in half-bridge converter 3 and a second output terminal 35 between a first capacitor C1 and a second capacitor C2 in half-bridge converter 3. Full-bridge converter 4 is connected to secondary coil N2 of transformer Tr1. Full-bridge converter 4 has a third semiconductor switching element Q3, a fourth semiconductor switching element Q4, a fifth semiconductor switching element Q5, and a sixth semiconductor switching element Q6. Inductor L1 is connected between the first output terminal 34 or the second output terminal 35 of half-bridge converter 3 and primary coil N1. Control device 5 controls half-bridge converter 3 and full-bridge converter 4.

透過以上說明之依實施態樣1之轉換裝置1，可達到高功率因數化及高效率化。Through the conversion device 1 according to the implementation mode 1 described above, high power factor and high efficiency can be achieved.

又，依實施態樣1之轉換裝置1中，控制裝置5以使流向輸入電感器Lin之電流i _L之模式為電流不連續模式之方式控制第1半導體開關元件Q1及第2半導體開關元件Q2，故可提升功率因數。 Furthermore, in the converter 1 according to the embodiment 1, the control device 5 controls the first semiconductor switch element Q1 and the second semiconductor switch element Q2 in such a way that the mode of the current i _L flowing to the input inductor Lin is a current discontinuous mode, thereby improving the power factor.

又，依實施態樣1之轉換裝置1中，控制裝置5透過基於輸出電壓指令值Vo ^＊及輸出電壓Vo之檢測值之PI控制，控制半橋變流器3之輸出電壓V1與全橋變流器4之輸入電壓V2之相位差θ ₁，故可控制輸出電壓Vo。 Furthermore, in the converter 1 according to the embodiment 1, the control device 5 controls the phase difference θ 1 between the output voltage _V1 of the half-bridge converter 3 and the input voltage V2 of the full-bridge converter 4 through PI control based on the output voltage command value Vo ^* and the detection value of the output voltage Vo, thereby controlling the output voltage Vo.

又，依實施態樣1之轉換裝置1中，控制裝置5透過基於直流母線電壓指令值Vdc ^＊及直流母線電壓Vdc之檢測值之PI控制，控制第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw，而使第3～第6半導體開關元件Q3～Q6之切換頻率與第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw相同。藉此，依實施態樣1之轉換裝置1，可在負荷變動時抑制半橋變流器3之直流母線電壓Vdc變動。 Furthermore, in the converter 1 according to the embodiment 1, the control device 5 controls the switching frequency fsw of the first semiconductor switch element Q1 and the second semiconductor switch element Q2 through PI control based on the DC bus voltage command value Vdc ^* and the detection value of the DC bus voltage Vdc, so that the switching frequency of the third to sixth semiconductor switch elements Q3 to Q6 is the same as the switching frequency fsw of the first semiconductor switch element Q1 and the second semiconductor switch element Q2. Thus, the converter 1 according to the embodiment 1 can suppress the variation of the DC bus voltage Vdc of the half-bridge converter 3 when the load varies.

(實施態樣2) 以下，基於圖11說明依實施態樣2之轉換裝置1a。依實施態樣2之轉換裝置1a中，對於與依實施態樣1之轉換裝置1(參照圖1)相同之構成要素標示相同符號而適當省略說明。 (Implementation Example 2) Below, the conversion device 1a according to Implementation Example 2 is described based on FIG. 11. In the conversion device 1a according to Implementation Example 2, the same components as the conversion device 1 according to Implementation Example 1 (see FIG. 1) are marked with the same symbols and the description is appropriately omitted.

(1)構成依實施態樣2之轉換裝置1a，具備與依實施態樣1之轉換裝置1中之半橋變流器3相同構成之第1半橋變流器3A，並且，在具備第2半橋變流器7及控制裝置5a而取代全橋變流器4及控制裝置5之點上與依實施態樣1之轉換裝置1相異。 (1) Configuration The converter 1a according to the embodiment 2 has a first half-bridge converter 3A having the same configuration as the half-bridge converter 3 in the converter 1 according to the embodiment 1, and is different from the converter 1 according to the embodiment 1 in that it has a second half-bridge converter 7 and a control device 5a instead of the full-bridge converter 4 and the control device 5.

第1半橋變流器3A與半橋變流器3係相同構成，故具有第1半導體開關元件Q1、第2半導體開關元件Q2、第1電容器C1及第2電容器C2。第1半導體開關元件Q1及第2半導體開關元件Q2之控制端子連接於控制裝置5a。第1半導體開關元件Q1對應於控制裝置5a給予的第1切換信號S1而開啟、關閉。又，第2半導體開關元件Q2對應於控制裝置5a給予的第2切換信號S2而開啟、關閉。The first half-bridge converter 3A has the same structure as the half-bridge converter 3, and thus has a first semiconductor switch element Q1, a second semiconductor switch element Q2, a first capacitor C1, and a second capacitor C2. The control terminals of the first semiconductor switch element Q1 and the second semiconductor switch element Q2 are connected to the control device 5a. The first semiconductor switch element Q1 is turned on and off in response to the first switching signal S1 given by the control device 5a. In addition, the second semiconductor switch element Q2 is turned on and off in response to the second switching signal S2 given by the control device 5a.

第2半橋變流器7連接於變壓器Tr1之二次線圈N2。第2半橋變流器7具備第3電容器C3及第4電容器C4，而取代依實施態樣1之轉換裝置1中之第5半導體開關元件Q5及第6半導體開關元件Q6。第2半橋變流器7具有第3半導體開關元件Q3與第4半導體開關元件Q4之串聯電路41、第3電容器C3與第4電容器C4之串聯電路43，以及輸出電容器Co。第3半導體開關元件Q3與第4半導體開關元件Q4之串聯電路41，連接在第1輸出端子13與第2輸出端子14之間。第3電容器C3與第4電容器C4之串聯電路43，連接在第1輸出端子13與第2輸出端子14之間。輸出電容器Co連接在第1輸出端子13與第2輸出端子14之間。The second half-bridge converter 7 is connected to the secondary coil N2 of the transformer Tr1. The second half-bridge converter 7 has a third capacitor C3 and a fourth capacitor C4, which replace the fifth semiconductor switch element Q5 and the sixth semiconductor switch element Q6 in the converter 1 according to the embodiment 1. The second half-bridge converter 7 has a series circuit 41 of the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4, a series circuit 43 of the third capacitor C3 and the fourth capacitor C4, and an output capacitor Co. The series circuit 41 of the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4 is connected between the first output terminal 13 and the second output terminal 14. The series circuit 43 of the third capacitor C3 and the fourth capacitor C4 is connected between the first output terminal 13 and the second output terminal 14. The output capacitor Co is connected between the first output terminal 13 and the second output terminal 14.

又，第2半橋變流器7具有第3二極體D3及第4二極體D4。第3二極體D3與第3半導體開關元件Q3反並聯。第4二極體D4與第4半導體開關元件Q4反並聯。The second half-bridge converter 7 includes a third diode D3 and a fourth diode D4. The third diode D3 is connected in anti-parallel to the third semiconductor switch element Q3. The fourth diode D4 is connected in anti-parallel to the fourth semiconductor switch element Q4.

第2半橋變流器7中，第3半導體開關元件Q3及第4半導體開關元件Q4分別具有控制端子、第1主端子及第2主端子。第3半導體開關元件Q3之控制端子及第4半導體開關元件Q4之控制端子連接於控制裝置5a。第3半導體開關元件Q3對應於控制裝置5a給予的第3切換信號S3而開啟、關閉。又，第4半導體開關元件Q4對應於控制裝置5a給予的第4切換信號S4而開啟、關閉。In the second half-bridge converter 7, the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4 have a control terminal, a first main terminal, and a second main terminal, respectively. The control terminal of the third semiconductor switch element Q3 and the control terminal of the fourth semiconductor switch element Q4 are connected to the control device 5a. The third semiconductor switch element Q3 is turned on and off in response to the third switching signal S3 given by the control device 5a. In addition, the fourth semiconductor switch element Q4 is turned on and off in response to the fourth switching signal S4 given by the control device 5a.

第2半橋變流器7具有第3半導體開關元件Q3與第4半導體開關元件Q4之間的第1輸入端44，以及第3電容器C3與第4電容器C4之間的第2輸入端47。第2半橋變流器7中，在第1輸入端44與第2輸入端47之間連接變壓器Tr1之二次線圈N2。The second half-bridge converter 7 has a first input terminal 44 between the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4, and a second input terminal 47 between the third capacitor C3 and the fourth capacitor C4. In the second half-bridge converter 7, the secondary coil N2 of the transformer Tr1 is connected between the first input terminal 44 and the second input terminal 47.

控制裝置5a控制第1半橋變流器3A及第2半橋變流器7。控制裝置5a控制第1半橋變流器3A之第1半導體開關元件Q1及第2半導體開關元件Q2。又，控制裝置5a控制第2半橋變流器7之第3半導體開關元件Q3及第4半導體開關元件Q4。控制裝置5a可分別對第1～第4半導體開關元件Q1～Q4給予第1～第4切換信號(控制信號)S1～S4。第1～第4切換信號S1～S4係施加於第1～第4半導體開關元件Q1～Q4之控制端子與第2主端子之間而使第1～第4半導體開關元件Q1～Q4開啟、關閉之閘極電壓(閘極信號)。第1～第4切換信號S1～S4係電壓位準在高於第1～第4半導體開關元件Q1～Q4之閾值電壓(閘極閾值電壓)之電壓位準(以下亦稱為高位準)與低於閾值電壓之電壓位準(以下稱為低位準)之間變化之電壓。控制裝置5a可改變第1～第4切換信號S1～S4之頻率。第1～第4切換信號S1～S4與實施態樣1中說明之第1～第4切換信號S1～S4相同。The control device 5a controls the first half bridge converter 3A and the second half bridge converter 7. The control device 5a controls the first semiconductor switch element Q1 and the second semiconductor switch element Q2 of the first half bridge converter 3A. Furthermore, the control device 5a controls the third semiconductor switch element Q3 and the fourth semiconductor switch element Q4 of the second half bridge converter 7. The control device 5a can provide the first to fourth switching signals (control signals) S1 to S4 to the first to fourth semiconductor switch elements Q1 to Q4, respectively. The first to fourth switching signals S1 to S4 are gate voltages (gate signals) applied between the control terminals and the second main terminals of the first to fourth semiconductor switching elements Q1 to Q4 to turn on and off the first to fourth semiconductor switching elements Q1 to Q4. The first to fourth switching signals S1 to S4 are voltages whose voltage levels vary between a voltage level (hereinafter also referred to as a high level) higher than a threshold voltage (gate threshold voltage) of the first to fourth semiconductor switching elements Q1 to Q4 and a voltage level (hereinafter referred to as a low level) lower than the threshold voltage. The control device 5a can change the frequency of the first to fourth switching signals S1 to S4. The first to fourth switching signals S1 to S4 are the same as the first to fourth switching signals S1 to S4 described in implementation example 1.

控制裝置5a控制第1半橋變流器3A之輸出電壓V1a，並控制第2半橋變流器7之輸出電壓Voa。The control device 5a controls the output voltage V1a of the first half-bridge converter 3A and controls the output voltage Voa of the second half-bridge converter 7.

又，控制裝置5a與實施態樣1之控制裝置5同樣將控制第1半導體開關元件Q1之第1切換信號S1之工作週期設為50％，並將控制第2半導體開關元件Q2之第2切換信號S2之工作週期設為50％。In addition, the control device 5a, like the control device 5 of implementation sample 1, sets the duty cycle of the first switching signal S1 for controlling the first semiconductor switch element Q1 to 50%, and sets the duty cycle of the second switching signal S2 for controlling the second semiconductor switch element Q2 to 50%.

又，控制裝置5a將控制第3半導體開關元件Q3之第3切換信號S3之工作週期設為50％，並將控制第4半導體開關元件Q4之第4切換信號S4之工作週期設為50％。Furthermore, the control device 5a sets the duty cycle of the third switching signal S3 for controlling the third semiconductor switch element Q3 to 50%, and sets the duty cycle of the fourth switching signal S4 for controlling the fourth semiconductor switch element Q4 to 50%.

又，控制裝置5a與實施態樣1之控制裝置5同樣以使流向輸入電感器Lin之電流i _L之模式為電流不連續模式之方式控制第1半導體開關元件Q1及第2半導體開關元件Q2。 In addition, the control device 5a controls the first semiconductor switching element Q1 and the second semiconductor switching element Q2 in such a manner that the mode of the current i _L flowing to the input inductor Lin is set to the current discontinuous mode, similarly to the control device 5 of the embodiment 1.

又，控制裝置5a透過基於第2半橋變流器7之輸出電壓指令值Voa ^＊及第2半橋變流器7之輸出電壓Voa之檢測值之PI控制，控制第1半橋變流器3A之輸出電壓V1a與第2半橋變流器7之輸入電壓V2a之相位差。 Furthermore, the control device 5a controls the phase difference between the output voltage V1a of the first half bridge converter 3A and the input voltage V2a of the second half bridge converter 7 through PI control based on the output voltage command value Voa ^* of the second half bridge converter 7 and the detection value of the output voltage Voa of the second half bridge converter 7.

又，控制裝置5a透過基於第1半橋變流器3A之直流母線電壓指令值Vdc ^＊及第1半橋變流器3A之直流母線電壓Vdc之檢測值之PI控制，控制第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率，並將第3半導體開關元件Q3及第4半導體開關元件Q4之切換頻率設為與第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率相同。 In addition, the control device 5a controls the switching frequency of the first semiconductor switching element Q1 and the second semiconductor switching element Q2 through PI control based on the DC bus voltage command value Vdc ^* of the first half-bridge converter 3A and the detection value of the DC bus voltage Vdc of the first half-bridge converter 3A, and sets the switching frequency of the third semiconductor switching element Q3 and the fourth semiconductor switching element Q4 to be the same as the switching frequency of the first semiconductor switching element Q1 and the second semiconductor switching element Q2.

控制裝置5a如圖11所示，具有第1減算部51a、第1PI控制部52a及生成部55a。第1減算部51a求出輸出電壓指令值Voa ^＊與輸出電壓Voa之差分電壓值。第1PI控制部52a生成相位差指令值θa ^＊，其係用於進行使第1減算部51a所求出之差分值趨近於零之回饋控制。藉此，控制裝置5a控制第1半橋變流器3A及第2半橋變流器7，以減小輸出電壓指令值Voa ^＊與輸出電壓Voa之差分電壓值。更詳細而言，生成部55a以使第1切換信號S1與第3切換信號S3之相位差之值成為相位差指令值θa ^＊之值之方式第1切換信號S1及第3切換信號S3，並基於第1切換信號S1生成第2切換信號S2，並基於第3切換信號S3生成第4切換信號S4。輸出電壓指令值Voa ^＊係透過與控制裝置5a亦即第1控制裝置5a不同之第2控制裝置對於第1控制裝置5a之第1外部指令，而在第1控制裝置5a中決定。換言之，第1控制裝置5a具有基於來自第2控制裝置之第1外部指令生成輸出電壓指令值Voa ^＊之機能。或者，透過程式將輸出電壓指令值Voa ^＊預先儲存於第1控制裝置5a。 As shown in FIG. 11 , the control device 5a includes a first subtraction unit 51a, a first PI control unit 52a, and a generation unit 55a. The first subtraction unit 51a obtains a differential voltage value between the output voltage command value Voa ^* and the output voltage Voa. The first PI control unit 52a generates a phase difference command value θa ^* , which is used to perform feedback control to make the differential value obtained by the first subtraction unit 51a approach zero. In this way, the control device 5a controls the first half-bridge converter 3A and the second half-bridge converter 7 to reduce the differential voltage value between the output voltage command value Voa ^* and the output voltage Voa. In more detail, the generator 55a generates the first switching signal S1 and the third switching signal S3 in such a manner that the value of the phase difference between the first switching signal S1 and the third switching signal S3 becomes the value of the phase difference command value θa ^* , generates the second switching signal S2 based on the first switching signal S1, and generates the fourth switching signal S4 based on the third switching signal S3. The output voltage command value Voa ^* is determined in the first control device 5a by the first external command to the first control device 5a from the second control device different from the control device 5a, that is, the first control device 5a. In other words, the first control device 5a has a function of generating the output voltage command value Voa ^* based on the first external command from the second control device. Alternatively, the output voltage command value Voa ^* is pre-stored in the first control device 5a through a program.

控制裝置5a具有第2減算部53a及第2PI控制部54a。第2減算部53a求出直流母線電壓指令值Vdc ^＊與直流母線電壓Vdc之差分電壓值。第2PI控制部54a生成切換頻率指令值fsw ^＊，其係用於進行使第2減算部53a所求出之差分電壓值趨近於零之回饋控制。藉此，控制裝置5a控制第1半橋變流器3A及第2半橋變流器7，以減小直流母線電壓指令值Vdc ^＊與直流母線電壓Vdc之差分電壓值。更詳細而言，控制裝置5a將第1～第4切換信號S1～S4之切換頻率之值變更為切換頻率指令值fsw ^＊之值。直流母線電壓指令值Vdc ^＊係透過第2控制裝置對於第1控制裝置5a之第2外部指令而在第1控制裝置5a中決定。換言之，第1控制裝置5a具有基於來自第2控制裝置之第2外部指令生成直流母線電壓指令值Vdc ^＊之機能。 The control device 5a has a second subtraction unit 53a and a second PI control unit 54a. The second subtraction unit 53a obtains the differential voltage value between the DC bus voltage command value Vdc ^* and the DC bus voltage Vdc. The second PI control unit 54a generates a switching frequency command value fsw ^* , which is used to perform feedback control to make the differential voltage value obtained by the second subtraction unit 53a approach zero. In this way, the control device 5a controls the first half-bridge converter 3A and the second half-bridge converter 7 to reduce the differential voltage value between the DC bus voltage command value Vdc ^* and the DC bus voltage Vdc. In more detail, the control device 5a changes the value of the switching frequency of the first to fourth switching signals S1 to S4 to the value of the switching frequency command value fsw ^* . The DC bus voltage command value Vdc ^* is determined in the first control device 5a through the second external command from the second control device to the first control device 5a. In other words, the first control device 5a has a function of generating the DC bus voltage command value Vdc ^* based on the second external command from the second control device.

第2外部指令例如係關於轉換裝置1a之直流母線電壓Vdc之指令。作為第2控制裝置對於第1控制裝置5a之第2外部指令之通信中之通信協定，例如可利用MODBUS或CAN或其他序列通信協定。第2控制裝置例如可係外部控制器。第2控制裝置對於第1控制裝置5a之第2外部指令之通信並非必須利用通信協定。The second external command is, for example, a command regarding the DC bus voltage Vdc of the conversion device 1a. As the communication protocol in the communication of the second external command from the second control device to the first control device 5a, for example, MODBUS or CAN or other serial communication protocols can be used. The second control device can be, for example, an external controller. The communication of the second external command from the second control device to the first control device 5a does not necessarily require the use of a communication protocol.

轉換裝置1a中，控制裝置5透過基於直流母線電壓指令值Vdc ^＊及直流母線電壓Vdc之檢測值之PI控制，控制第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率，藉此，即使因負荷變動等造成轉換裝置1a之輸出功率Po變動，依然可進行使直流母線電壓Vdc接近直流母線電壓指令值Vdc ^＊之值之控制。 In the conversion device 1a, the control device 5 controls the switching frequency of the first semiconductor switch element Q1 and the second semiconductor switch element Q2 through PI control based on the DC bus voltage command value Vdc ^* and the detection value of the DC bus voltage Vdc. Thus, even if the output power Po of the conversion device 1a changes due to load changes, etc., the DC bus voltage Vdc can still be controlled to be close to the value of the DC bus voltage command value Vdc ^* .

控制裝置5a之執行主體與控制裝置5之執行主體同樣包含電腦系統。The execution body of the control device 5a and the execution body of the control device 5 also include a computer system.

(2)總結依實施態樣2之轉換裝置1a，具備整流器2、第1半橋變流器3A、輸入電感器Lin、變壓器Tr1、電感器L1、第2半橋變流器7及控制裝置5a。整流器2係由第1二極體D1及串聯於第1二極體D1之第2二極體D2構成。整流器2中，交流電源8之第1交流輸出端81連接於第1二極體D1與第2二極體D2之連接點21。第1半橋變流器3A具有第1半導體開關元件Q1與第2半導體開關元件Q2之第1串聯電路31，以及第1電容器C1與第2電容器C2之第2串聯電路32。第1串聯電路31連接在第1二極體D1之陰極與第2二極體D2之陽極之間。第2串聯電路32與第1串聯電路31並聯。第1半橋變流器3A中，交流電源8之第2交流輸出端82連接於第1半導體開關元件Q1與第2半導體開關元件Q2之連接點33。輸入電感器Lin連接在交流電源8與整流器2之間。變壓器Tr1包含一次線圈N1及二次線圈N2。變壓器Tr1中，在第1半橋變流器3A中之第1半導體開關元件Q1與第2半導體開關元件Q2之間的第1輸出端34與第1半橋變流器3A中之第1電容器C1與第2電容器C2之間的第2輸出端35之間，連接一次線圈N1。電感器L1連接在第1半橋變流器3A之第1輸出端34或第2輸出端35與一次線圈N1之間。第2半橋變流器7連接於變壓器Tr1之二次線圈N2。第2半橋變流器7具有第3半導體開關元件Q3、第4半導體開關元件Q4、第3電容器C3及第4電容器C4。控制裝置5a控制第1半橋變流器3A及第2半橋變流器7。 (2) Summary According to the conversion device 1a of the embodiment 2, there is a rectifier 2, a first half-bridge converter 3A, an input inductor Lin, a transformer Tr1, an inductor L1, a second half-bridge converter 7 and a control device 5a. The rectifier 2 is composed of a first diode D1 and a second diode D2 connected in series with the first diode D1. In the rectifier 2, the first AC output terminal 81 of the AC power source 8 is connected to the connection point 21 between the first diode D1 and the second diode D2. The first half-bridge converter 3A has a first series circuit 31 of a first semiconductor switch element Q1 and a second semiconductor switch element Q2, and a second series circuit 32 of a first capacitor C1 and a second capacitor C2. The first series circuit 31 is connected between the cathode of the first diode D1 and the anode of the second diode D2. The second series circuit 32 is connected in parallel with the first series circuit 31. In the first half-bridge converter 3A, the second AC output terminal 82 of the AC power source 8 is connected to the connection point 33 of the first semiconductor switch element Q1 and the second semiconductor switch element Q2. The input inductor Lin is connected between the AC power source 8 and the rectifier 2. The transformer Tr1 includes a primary coil N1 and a secondary coil N2. In the transformer Tr1, the primary winding N1 is connected between the first output terminal 34 between the first semiconductor switching element Q1 and the second semiconductor switching element Q2 in the first half bridge converter 3A and the second output terminal 35 between the first capacitor C1 and the second capacitor C2 in the first half bridge converter 3A. The inductor L1 is connected between the first output terminal 34 or the second output terminal 35 of the first half bridge converter 3A and the primary winding N1. The second half bridge converter 7 is connected to the secondary winding N2 of the transformer Tr1. The second half bridge converter 7 has a third semiconductor switching element Q3, a fourth semiconductor switching element Q4, a third capacitor C3, and a fourth capacitor C4. The control device 5a controls the first half-bridge converter 3A and the second half-bridge converter 7.

透過依實施態樣2之轉換裝置1a，可達到高功率因數化及高效率化。By using the conversion device 1a according to the implementation mode 2, a high power factor and a high efficiency can be achieved.

又，依實施態樣2之轉換裝置1a中，控制裝置5a以使流向輸入電感器Lin之電流i _L之模式為電流不連續模式之方式控制第1半導體開關元件Q1及第2半導體開關元件Q2，故可提升功率因數。 Furthermore, in the converter 1a according to the second embodiment, the control device 5a controls the first semiconductor switch element Q1 and the second semiconductor switch element Q2 in such a way that the mode of the current i _L flowing to the input inductor Lin is a current discontinuous mode, thereby improving the power factor.

又，依實施態樣2之轉換裝置1a中，控制裝置5a透過基於輸出電壓指令值Voa ^＊及輸出電壓Voa之檢測值之PI控制，控制第1半橋變流器3A之輸出電壓V1a與第2半橋變流器7之輸入電壓V2a之相位差，故可控制輸出電壓Voa。 Furthermore, in the conversion device 1a according to the implementation form 2, the control device 5a controls the phase difference between the output voltage V1a of the first half-bridge converter 3A and the input voltage V2a of the second half-bridge converter 7 through PI control based on the output voltage command value Voa ^* and the detection value of the output voltage Voa, thereby controlling the output voltage Voa.

又，依實施態樣2之轉換裝置1a中，控制裝置5a透過基於直流母線電壓指令值Vdc ^＊及直流母線電壓Vdc之檢測值之PI控制，控制第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw，並將第3半導體開關元件Q3及第4半導體開關元件Q4之切換頻率設為與第1半導體開關元件Q1及第2半導體開關元件Q2之切換頻率fsw相同。藉此，依實施態樣2之轉換裝置1a可在負荷變動時抑制第1半橋變流器3A之直流母線電壓Vdc變動。 Furthermore, in the converter 1a according to the second embodiment, the control device 5a controls the switching frequency fsw of the first semiconductor switching element Q1 and the second semiconductor switching element Q2 through PI control based on the DC bus voltage command value Vdc ^* and the detection value of the DC bus voltage Vdc, and sets the switching frequency of the third semiconductor switching element Q3 and the fourth semiconductor switching element Q4 to be the same as the switching frequency fsw of the first semiconductor switching element Q1 and the second semiconductor switching element Q2. Thus, the converter 1a according to the second embodiment can suppress the variation of the DC bus voltage Vdc of the first half-bridge converter 3A when the load varies.

(變形例) 上述實施態樣1、2僅為本發明之多種實施態樣之一例。上述實施態樣1、2只要可達成本發明之目的，則可因應設計等而進行各種變更。 (Variation) The above-mentioned embodiments 1 and 2 are only one example of the various embodiments of the present invention. As long as the purpose of the present invention can be achieved, various changes can be made to the above-mentioned embodiments 1 and 2 according to the design, etc.

例如，第1半導體開關元件Q1及第2半導體開關元件Q2不限於GaN系GIT，例如，亦可係Si系MOSFET、SiC系MOSFET或IGBT(Insulated Gate Bipolar Transistor，絕緣閘雙極電晶體)。For example, the first semiconductor switch element Q1 and the second semiconductor switch element Q2 are not limited to GaN-based GITs, and may be, for example, Si-based MOSFETs, SiC-based MOSFETs, or IGBTs (Insulated Gate Bipolar Transistors).

又，第3～第6半導體開關元件Q3～Q6不限於n通道MOSFET，亦可係p通道MOSFET。又，構成第3～第6半導體開關元件Q3～Q6之MOSFET不限於Si系MOSFET，例如，亦可係SiC系MOSFET、IGBT或GaN系GIT。Furthermore, the third to sixth semiconductor switch elements Q3 to Q6 are not limited to n-channel MOSFETs, but may be p-channel MOSFETs. Furthermore, the MOSFETs constituting the third to sixth semiconductor switch elements Q3 to Q6 are not limited to Si-based MOSFETs, but may be SiC-based MOSFETs, IGBTs, or GaN-based GITs, for example.

又，依實施態樣1之轉換裝置1中，電感器L1係連接在半橋變流器3之第1輸出端34或第2輸出端35與一次線圈N1之間，但亦可如圖12所示，將電感器L1連接在變壓器Tr1之二次線圈N2與全橋變流器4之間。Furthermore, in the converter 1 according to the embodiment 1, the inductor L1 is connected between the first output terminal 34 or the second output terminal 35 of the half-bridge converter 3 and the primary coil N1, but the inductor L1 may also be connected between the secondary coil N2 of the transformer Tr1 and the full-bridge converter 4 as shown in FIG. 12 .

又，變壓器Tr1不限於一次線圈N1之圈數大於二次線圈N2之圈數之構成，亦可係二次線圈N2之圈數大於一次線圈N1之圈數之構成。Furthermore, the transformer Tr1 is not limited to a configuration in which the number of turns of the primary coil N1 is greater than the number of turns of the secondary coil N2, but may also be a configuration in which the number of turns of the secondary coil N2 is greater than the number of turns of the primary coil N1.

又，輸入濾波器6不限於LC濾波器，例如，亦可係共模濾波器。Furthermore, the input filter 6 is not limited to an LC filter, and may be, for example, a common mode filter.

轉換裝置1中，輸入電感器Lin不限於連接在交流電源8與整流器2之間，亦可連接在交流電源8與半橋變流器3之間。In the conversion device 1 , the input inductor Lin is not limited to being connected between the AC power source 8 and the rectifier 2 , but may also be connected between the AC power source 8 and the half-bridge converter 3 .

轉換裝置1中，輸入電感器Lin不限於連接在交流電源8與整流器2之間，亦可連接在交流電源8與第1半橋變流器3A之間。In the conversion device 1, the input inductor Lin is not limited to being connected between the AC power source 8 and the rectifier 2, but can also be connected between the AC power source 8 and the first half-bridge converter 3A.

(態樣) 依據以上說明之實施態樣1～2等，本說明書中揭示以下態樣。 (Aspects) Based on the implementation aspects 1 to 2 described above, this specification discloses the following aspects.

依第1態樣之轉換裝置(1)，具備整流器(2)、半橋變流器(3)、輸入電感器(Lin)、變壓器(Tr1)、全橋變流器(4)、電感器(L1)及控制裝置(5)。整流器(2)係由第1二極體(D1)及串聯於第1二極體(D1)之第2二極體(D2)構成。整流器(2)中，交流電源(8)之第1交流輸出端(81)連接於第1二極體(D1)與第2二極體(D2)之連接點(21)。半橋變流器(3)具有第1半導體開關元件(Q1)與第2半導體開關元件(Q2)之第1串聯電路(31)，以及第1電容器(C1)與第2電容器(C2)之第2串聯電路(32)。第2串聯電路(32)與第1串聯電路(31)並聯。半橋變流器(3)中，第1半導體開關元件(Q1)連接於第1二極體(D1)之陰極，第2半導體開關元件(Q2)連接於第2二極體(D2)之陽極。半橋變流器(3)中，交流電源(8)之第2交流輸出端(82)連接於第1半導體開關元件(Q1)與第2半導體開關元件(Q2)之連接點(33)。輸入電感器(Lin)連接在交流電源(8)與整流器(2)或半橋變流器(3)之間。變壓器(Tr1)包含一次線圈(N1)及二次線圈(N2)。變壓器(Tr1)中，在半橋變流器(3)中之第1半導體開關元件(Q1)與第2半導體開關元件(Q2)之間的第1輸出端(34)與半橋變流器(3)中之第1電容器(C1)與第2電容器(C2)之間的第2輸出端(35)之間，連接一次線圈(N1)。全橋變流器(4)連接於變壓器(Tr1)之二次線圈(N2)。全橋變流器(4)具有第3半導體開關元件(Q3)、第4半導體開關元件(Q4)、第5半導體開關元件(Q5)及第6半導體開關元件(Q6)。電感器(L1)連接在半橋變流器(3)之第1輸出端(34)與一次線圈(N1)之間，或半橋變流器(3)之第2輸出端(35)與一次線圈(N1)之間，或二次線圈(N2)與全橋變流器(4)之間。控制裝置(5)控制半橋變流器(3)及全橋變流器(4)。According to the first embodiment, the conversion device (1) comprises a rectifier (2), a half-bridge converter (3), an input inductor (Lin), a transformer (Tr1), a full-bridge converter (4), an inductor (L1) and a control device (5). The rectifier (2) is composed of a first diode (D1) and a second diode (D2) connected in series with the first diode (D1). In the rectifier (2), a first AC output terminal (81) of an AC power source (8) is connected to a connection point (21) between the first diode (D1) and the second diode (D2). The half-bridge converter (3) comprises a first series circuit (31) of a first semiconductor switch element (Q1) and a second semiconductor switch element (Q2), and a second series circuit (32) of a first capacitor (C1) and a second capacitor (C2). The second series circuit (32) is connected in parallel with the first series circuit (31). In the half-bridge converter (3), the first semiconductor switch element (Q1) is connected to the cathode of the first diode (D1), and the second semiconductor switch element (Q2) is connected to the anode of the second diode (D2). In the half-bridge converter (3), the second AC output terminal (82) of the AC power source (8) is connected to the connection point (33) of the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2). The input inductor (Lin) is connected between the AC power source (8) and the rectifier (2) or the half-bridge converter (3). The transformer (Tr1) includes a primary coil (N1) and a secondary coil (N2). In the transformer (Tr1), the primary coil (N1) is connected between the first output terminal (34) between the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2) in the half-bridge converter (3) and the second output terminal (35) between the first capacitor (C1) and the second capacitor (C2) in the half-bridge converter (3). The full-bridge converter (4) is connected to the secondary coil (N2) of the transformer (Tr1). The full-bridge converter (4) has a third semiconductor switch element (Q3), a fourth semiconductor switch element (Q4), a fifth semiconductor switch element (Q5) and a sixth semiconductor switch element (Q6). The inductor (L1) is connected between the first output terminal (34) of the half-bridge converter (3) and the primary coil (N1), or between the second output terminal (35) of the half-bridge converter (3) and the primary coil (N1), or between the secondary coil (N2) and the full-bridge converter (4). The control device (5) controls the half-bridge converter (3) and the full-bridge converter (4).

透過依第1態樣之轉換裝置(1)，可達到高功率因數化及高效率化。By using the conversion device (1) according to the first aspect, a high power factor and high efficiency can be achieved.

依第2態樣之轉換裝置(1)，係在第1態樣中，控制裝置(5)控制半橋變流器(3)之直流母線電壓(Vdc)，並控制全橋變流器(4)之輸出電壓(Vo)。According to the conversion device (1) of the second aspect, in the first aspect, the control device (5) controls the DC bus voltage (Vdc) of the half-bridge converter (3) and controls the output voltage (Vo) of the full-bridge converter (4).

依第3態樣之轉換裝置(1)，係在第2態樣中，控制裝置(5)將控制第1半導體開關元件(Q1)之第1切換信號(S1)之工作週期設為50％，並將控制第2半導體開關元件(Q2)之第2切換信號(S2)之工作週期設為50％。According to the conversion device (1) of the third aspect, in the second aspect, the control device (5) sets the duty cycle of the first switching signal (S1) for controlling the first semiconductor switch element (Q1) to 50%, and sets the duty cycle of the second switching signal (S2) for controlling the second semiconductor switch element (Q2) to 50%.

依第4態樣之轉換裝置(1)，係在第2或3態樣中，控制裝置(5)將控制第3半導體開關元件(Q3)之第3切換信號(S3)之工作週期設為50％，並將控制第4半導體開關元件(Q4)之第4切換信號(S4)之工作週期設為50％，並將控制第5半導體開關元件(Q5)之第5切換信號(S5)之工作週期設為50％，並將控制第6半導體開關元件(Q6)之第6切換信號(S6)之工作週期設為50％。According to the conversion device (1) of the 4th aspect, in the 2nd or 3rd aspect, the control device (5) sets the duty cycle of the 3rd switching signal (S3) for controlling the 3rd semiconductor switch element (Q3) to 50%, and sets the duty cycle of the 4th switching signal (S4) for controlling the 4th semiconductor switch element (Q4) to 50%, and sets the duty cycle of the 5th switching signal (S5) for controlling the 5th semiconductor switch element (Q5) to 50%, and sets the duty cycle of the 6th switching signal (S6) for controlling the 6th semiconductor switch element (Q6) to 50%.

依第5態樣之轉換裝置(1)，係在第2～4態樣中任一項中，控制裝置(5)控制第1半導體開關元件(Q1)及第2半導體開關元件(Q2)，以使流向輸入電感器(Lin)之電流(i _L)之模式為電流不連續模式。 According to the conversion device (1) of the fifth aspect, in any one of the second to fourth aspects, the control device (5) controls the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2) so that the mode of the current (i _L ) flowing to the input inductor (Lin) is a current discontinuous mode.

依第5態樣之轉換裝置(1)可提升功率因數。The conversion device (1) according to the fifth aspect can improve the power factor.

依第6態樣之轉換裝置(1)，係在第2～5態樣中任一項中，控制裝置(5)透過基於全橋變流器(4)之輸出電壓指令值(Vo ^＊)及全橋變流器(4)之輸出電壓(Vo)之檢測值之PI控制，控制半橋變流器(3)之輸出電壓(V1)與全橋變流器(4)之輸入電壓(V2)之相位差(θ ₁)。 According to the conversion device (1) of the sixth aspect, in any one of the aspects 2 to 5, the control device (5) controls the phase difference (θ 1 ) between the output voltage (V1) of the half-bridge converter (3) and the input voltage (V2) of the full-bridge converter (4) through PI control based on the output voltage command value (Vo ^* ) of the full-bridge converter (4) and the detection value of the output voltage ( _Vo ) of the full-bridge converter (4).

依第6態樣之轉換裝置(1)，可藉由控制相位差(θ ₁)而控制輸出電壓(Vo)。 According to the conversion device (1) of the sixth aspect, the output voltage (Vo) can be controlled by controlling the phase difference (θ ₁ ).

依第7態樣之轉換裝置(1)，係在第2～6態樣中任一項中，控制裝置(5)透過基於半橋變流器(3)之直流母線電壓指令值(Vdc ^＊)及半橋變流器(3)之直流母線電壓(Vdc)之檢測值之PI控制，控制第1半導體開關元件(Q1)及第2半導體開關元件(Q2)之切換頻率(fsw)，並將第3半導體開關元件(Q3)、第4半導體開關元件(Q4)、第5半導體開關元件(Q5)及第6半導體開關元件(Q6)之切換頻率設為與第1半導體開關元件(Q1)及第2半導體開關元件(Q2)之切換頻率(fsw)相同。 According to the conversion device (1) of the seventh aspect, in any one of the second to sixth aspects, the control device (5) controls the switching frequency (fsw) of the first semiconductor switching element (Q1) and the second semiconductor switching element (Q2) through PI control based on the DC bus voltage command value (Vdc ^* ) of the half-bridge converter (3) and the detection value of the DC bus voltage (Vdc) of the half-bridge converter (3), and sets the switching frequency of the third semiconductor switching element (Q3), the fourth semiconductor switching element (Q4), the fifth semiconductor switching element (Q5) and the sixth semiconductor switching element (Q6) to be the same as the switching frequency (fsw) of the first semiconductor switching element (Q1) and the second semiconductor switching element (Q2).

透過依第7態樣之轉換裝置(1)，可藉由對第1半導體開關元件(Q1)及第2半導體開關元件(Q2)進行PFM(Pulse Frequency Modulation，脈波頻率調變)控制，而控制直流母線電壓(Vdc)，故可在負荷變動時抑制半橋變流器(3)之直流母線電壓(Vdc)變動。By using the conversion device (1) according to the seventh aspect, the DC bus voltage (Vdc) can be controlled by performing PFM (Pulse Frequency Modulation) control on the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2), thereby suppressing the change of the DC bus voltage (Vdc) of the half-bridge converter (3) when the load changes.

依第8態樣之轉換裝置(1a)，具備整流器(2)、第1半橋變流器(3A)、輸入電感器(Lin)、變壓器(Tr1)、電感器(L1)、第2半橋變流器(7)及控制裝置(5a)。整流器(2)係由第1二極體(D1)及串聯於第1二極體(D1)之第2二極體(D2)構成。整流器(2)中，交流電源(8)之第1交流輸出端(81)連接於第1二極體(D1)與第2二極體(D2)之連接點(21)。第1半橋變流器(3A)具有第1半導體開關元件(Q1)與第2半導體開關元件(Q2)之第1串聯電路(31)，以及第1電容器(C1)與第2電容器(C2)之第2串聯電路(32)。第1串聯電路(31)連接在第1二極體(D1)之陰極與第2二極體(D2)之陽極之間。第2串聯電路(32)與第1串聯電路(31)並聯。第1半橋變流器(3A)中，交流電源(8)之第2交流輸出端(82)連接於第1半導體開關元件(Q1)與第2半導體開關元件(Q2)之連接點(33)。輸入電感器(Lin)連接在交流電源(8)與整流器(2)或第1半橋變流器(3A)之間。變壓器(Tr1)包含一次線圈(N1)及二次線圈(N2)。變壓器(Tr1)中，在第1半橋變流器(3A)中之第1半導體開關元件(Q1)與第2半導體開關元件(Q2)之間的第1輸出端(34)與第1半橋變流器(3A)中之第1電容器(C1)與第2電容器(C2)之間的第2輸出端(35)之間，連接一次線圈(N1)。電感器(L1)連接在第1半橋變流器(3A)之第1輸出端(34)或第2輸出端(35)與一次線圈(N1)之間。第2半橋變流器(7)連接於變壓器(Tr1)之二次線圈(N2)。第2半橋變流器(7)具有第3半導體開關元件(Q3)、第4半導體開關元件(Q4)、第3電容器(C3)及第4電容器(C4)。控制裝置(5a)控制第1半橋變流器(3A)及第2半橋變流器(7)。According to the eighth aspect, the conversion device (1a) comprises a rectifier (2), a first half-bridge converter (3A), an input inductor (Lin), a transformer (Tr1), an inductor (L1), a second half-bridge converter (7) and a control device (5a). The rectifier (2) is composed of a first diode (D1) and a second diode (D2) connected in series with the first diode (D1). In the rectifier (2), a first AC output terminal (81) of an AC power source (8) is connected to a connection point (21) between the first diode (D1) and the second diode (D2). The first half-bridge converter (3A) has a first series circuit (31) of a first semiconductor switch element (Q1) and a second semiconductor switch element (Q2), and a second series circuit (32) of a first capacitor (C1) and a second capacitor (C2). The first series circuit (31) is connected between the cathode of the first diode (D1) and the anode of the second diode (D2). The second series circuit (32) is connected in parallel with the first series circuit (31). In the first half-bridge converter (3A), a second AC output terminal (82) of an AC power source (8) is connected to a connection point (33) between the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2). The input inductor (Lin) is connected between the AC power source (8) and the rectifier (2) or the first half-bridge converter (3A). The transformer (Tr1) includes a primary coil (N1) and a secondary coil (N2). In the transformer (Tr1), the primary coil (N1) is connected between the first output terminal (34) between the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2) in the first half-bridge converter (3A) and the second output terminal (35) between the first capacitor (C1) and the second capacitor (C2) in the first half-bridge converter (3A). The inductor (L1) is connected between the first output terminal (34) or the second output terminal (35) of the first half-bridge converter (3A) and the primary coil (N1). The second half-bridge converter (7) is connected to the secondary coil (N2) of the transformer (Tr1). The second half-bridge converter (7) has a third semiconductor switch element (Q3), a fourth semiconductor switch element (Q4), a third capacitor (C3) and a fourth capacitor (C4). The control device (5a) controls the first half-bridge converter (3A) and the second half-bridge converter (7).

透過依第8態樣之轉換裝置(1a)，可達到高功率因數化及高效率化。By using the conversion device (1a) according to the eighth aspect, high power factor and high efficiency can be achieved.

依第9態樣之轉換裝置(1a)，係在第8態樣中，控制裝置(5a)控制第1半橋變流器(3A)之直流母線電壓(Vdc)，並控制第2半橋變流器(7)之輸出電壓(Voa)。According to the conversion device (1a) of the 9th aspect, in the 8th aspect, the control device (5a) controls the DC bus voltage (Vdc) of the first half-bridge converter (3A) and controls the output voltage (Voa) of the second half-bridge converter (7).

依第10態樣之轉換裝置(1a)，係在第9態樣中，控制裝置(5a)將控制第1半導體開關元件(Q1)之第1切換信號(S1)之工作週期設為50％，並將控制第2半導體開關元件(Q2)之第2切換信號(S2)之工作週期設為50％。According to the conversion device (1a) of the 10th aspect, in the 9th aspect, the control device (5a) sets the duty cycle of the first switching signal (S1) for controlling the first semiconductor switch element (Q1) to 50%, and sets the duty cycle of the second switching signal (S2) for controlling the second semiconductor switch element (Q2) to 50%.

依第11態樣之轉換裝置(1a)，係在第9或10態樣中，控制裝置(5a)將控制第3半導體開關元件(Q3)之第3切換信號(S3)之工作週期設為50％，並將控制第4半導體開關元件(Q4)之第4切換信號(S4)之工作週期設為50％。According to the conversion device (1a) of the 11th aspect, in the 9th or 10th aspect, the control device (5a) sets the duty cycle of the third switching signal (S3) for controlling the third semiconductor switch element (Q3) to 50%, and sets the duty cycle of the fourth switching signal (S4) for controlling the fourth semiconductor switch element (Q4) to 50%.

依第12態樣之轉換裝置(1a)，係在第9～11態樣中任一項中，控制裝置(5a)控制第1半導體開關元件(Q1)及第2半導體開關元件(Q2)，以使流向輸入電感器(Lin)之電流(i _L)之模式為電流不連續模式。 According to the conversion device (1a) of the twelfth aspect, in any one of the ninth to eleventh aspects, the control device (5a) controls the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2) so that the mode of the current (i _L ) flowing to the input inductor (Lin) is a current discontinuous mode.

透過依第12態樣之轉換裝置(1a)，可提升功率因數。By using the conversion device (1a) according to the twelfth aspect, the power factor can be improved.

依第13態樣之轉換裝置(1a)，係在第9～12態樣中任一項中，控制裝置(5a)透過基於第2半橋變流器(7)之輸出電壓指令值(Voa ^＊)及第2半橋變流器(7)之輸出電壓(Voa)之檢測值之PI控制，控制第1半橋變流器(3A)之輸出電壓(V1a)與第2半橋變流器(7)之輸入電壓(V2a)之相位差。 According to the conversion device (1a) of the 13th aspect, in any one of the 9th to 12th aspects, the control device (5a) controls the phase difference between the output voltage (V1a) of the first half-bridge converter (3A) and the input voltage (V2a) of the second half-bridge converter (7) through PI control based on the output voltage command value (Voa ^* ) of the second half-bridge converter (7) and the detection value of the output voltage (Voa) of the second half-bridge converter (7).

透過依第13態樣之轉換裝置(1a)，可藉由控制相位差而控制輸出電壓(Voa)。By using the conversion device (1a) according to the 13th aspect, the output voltage (Voa) can be controlled by controlling the phase difference.

依第14態樣之轉換裝置(1a)，係在第9～13態樣中任一項中，控制裝置(5a)透過基於第1半橋變流器(3A)之直流母線電壓指令值(Vdc ^＊)及第1半橋變流器(3A)之直流母線電壓(Vdc)之檢測值之PI控制，控制第1半導體開關元件(Q1)及第2半導體開關元件(Q2)之切換頻率(fsw)，並將第3半導體開關元件(Q3)及第4半導體開關元件(Q4)之切換頻率設為與第1半導體開關元件(Q1)及第2半導體開關元件(Q2)之切換頻率(fsw)相同。 According to the conversion device (1a) of the 14th aspect, in any one of the 9th to 13th aspects, the control device (5a) controls the switching frequency (fsw) of the first semiconductor switching element (Q1) and the second semiconductor switching element (Q2) through PI control based on the DC bus voltage command value (Vdc ^* ) of the first half-bridge converter (3A) and the detection value of the DC bus voltage (Vdc) of the first half-bridge converter (3A), and sets the switching frequency of the third semiconductor switching element (Q3) and the fourth semiconductor switching element (Q4) to be the same as the switching frequency (fsw) of the first semiconductor switching element (Q1) and the second semiconductor switching element (Q2).

透過依第14態樣之轉換裝置(1a)，可藉由對第1半導體開關元件(Q1)及第2半導體開關元件(Q2)進行PFM(Pulse Frequency Modulation)控制而控制直流母線電壓(Vdc)，故可在負荷變動時抑制第1半橋變流器(3A)之直流母線電壓(Vdc)變動。By using the conversion device (1a) according to the fourteenth aspect, the DC bus voltage (Vdc) can be controlled by performing PFM (Pulse Frequency Modulation) control on the first semiconductor switch element (Q1) and the second semiconductor switch element (Q2), thereby suppressing the variation of the DC bus voltage (Vdc) of the first half-bridge converter (3A) when the load varies.

1,1a:轉換裝置 2:整流器 21:連接點 3:半橋變流器 3A:第1半橋變流器 31:第1串聯電路 32:第2串聯電路 33:連接點 34:第1輸出端 35:第2輸出端 4:全橋變流器 41,42,43:串聯電路 44:第1輸入端 45:第2輸入端 47:第2輸入端 5,5a:控制裝置(第1控制裝置) 51,51a:第1減算部 52,52a:第1PI控制部 53,53a:第2減算部 54,54a:第2PI控制部 55,55a:生成部 6:輸入濾波器 7:第2半橋變流器 8:交流電源 81:第1交流輸出端 82:第2交流輸出端 11:第1輸入端子 12:第2輸入端子 13:第1輸出端子 14:第2輸出端子 C1:第1電容器 C2:第2電容器 C3:第3電容器 C4:第4電容器 Cf:電容器 Co:輸出電容器 D1:第1二極體 D2:第2二極體 D3:第3二極體 D4:第4二極體 D5:第5二極體 D6:第6二極體 fsw:切換頻率 fsw ^＊:切換頻率指令值 Iin:輸入電流 L1:電感器 Lf:電感器 Lin:輸入電感器 Tr1:變壓器 N1:一次線圈 N2:二次線圈 Q1:第1半導體開關元件 Q2:第2半導體開關元件 Q3:第3半導體開關元件 Q4:第4半導體開關元件 Q5:第5半導體開關元件 Q6:第6半導體開關元件 S1:第1切換信號 S2:第2切換信號 S3:第3切換信號 S4:第4切換信號 S5:第5切換信號 S6:第6切換信號 V1:輸出電壓 V1a:輸出電壓 V2:輸入電壓 V2a:輸入電壓 Vdc:直流母線電壓 Vdc ^＊:直流母線電壓指令值 Vin:輸入電壓 Vo:輸出電壓 Voa:輸出電壓 Vo ^＊:輸出電壓指令值 Voa ^＊:輸出電壓指令值 i1:電流 i2:電流 i _L:電流 T1:第1期間 T2:第2期間 T3:第3期間 T11:第4期間 T12:第5期間 T13:第6期間 Td:停滯期間 θ:相位差 θ ₁:相位差 θ ^＊:相位差指令值 1,1a: Converter 2: Rectifier 21: Connection point 3: Half-bridge converter 3A: First half-bridge converter 31: First series circuit 32: Second series circuit 33: Connection point 34: First output terminal 35: Second output terminal 4: Full-bridge converter 41,42,43: Series circuit 44: First input terminal 45: Second input terminal 47: Second input terminal 5,5a: Control device (first control device) 51, 51a: first subtraction unit 52, 52a: first PI control unit 53, 53a: second subtraction unit 54, 54a: second PI control unit 55, 55a: generation unit 6: input filter 7: second half-bridge converter 8: AC power supply 81: first AC output terminal 82: second AC output terminal 11: first input terminal 12: second input terminal 13: 1st output terminal 14: 2nd output terminal C1: 1st capacitor C2: 2nd capacitor C3: 3rd capacitor C4: 4th capacitor Cf: capacitor Co: output capacitor D1: 1st diode D2: 2nd diode D3: 3rd diode D4: 4th diode D5: 5th diode D6: 6th diode fsw: switching frequency fsw ^＊ : Switching frequency command value Iin: Input current L1: Inductor Lf: Inductor Lin: Input inductor Tr1: Transformer N1: Primary coil N2: Secondary coil Q1: First semiconductor switch element Q2: Second semiconductor switch element Q3: Third semiconductor switch element Q4: Fourth semiconductor switch element Q5: Fifth semiconductor switch element Q6: Sixth semiconductor switch element S1: First switching signal S2: Second switching signal S3: Third switching signal S4: Fourth switching signal S5: Fifth switching signal S6: Sixth switching signal V1: Output voltage V1a: Output voltage V2: Input voltage V2a: Input voltage Vdc: DC bus voltage Vdc ^＊ : DC bus voltage command value Vin: Input voltage Vo: Output voltage Voa: Output voltage Vo ^* : Output voltage command value Voa ^* : Output voltage command value i1: Current i2: Current i _L : Current T1: 1st period T2: 2nd period T3: 3rd period T11: 4th period T12: 5th period T13: 6th period Td: Stagnation period θ: Phase difference θ ₁ : Phase difference θ ^* : Phase difference command value

圖1係依實施態樣1之轉換裝置之電路圖。圖2係用以說明同上之轉換裝置之動作之時序圖。圖3係關於同上之轉換裝置，且輸入電壓之極性為正時之動作說明圖。圖4A～4C係關於同上之轉換裝置，且輸入電壓之極性為正時之動作說明圖。圖5係同上之轉換裝置之動作波形圖。圖6係關於同上之轉換裝置，且輸入電壓之極性為負時之動作說明圖。圖7A～7C係關於同上之轉換裝置，且輸入電壓之極性為負時之動作說明圖。圖8係關於同上之轉換裝置，且表示使切換頻率變化時之直流母線電壓與輸出功率之關係之圖表。圖9係同上之轉換裝置之動作波形圖。圖10A係在同上之轉換裝置中輸出功率為100W時之動作波形之放大圖。圖10B係在同上之轉換裝置中輸出功率為50W時之動作波形之放大圖。圖11係依實施態樣2之轉換裝置之電路圖。圖12係依實施態樣1之變形例之轉換裝置之電路圖。 FIG. 1 is a circuit diagram of a conversion device according to implementation example 1. FIG. 2 is a timing diagram for explaining the operation of the conversion device as above. FIG. 3 is an operation diagram for explaining the operation of the conversion device as above when the polarity of the input voltage is positive. FIG. 4A to 4C are operation diagrams for explaining the operation of the conversion device as above when the polarity of the input voltage is positive. FIG. 5 is an operation waveform diagram of the conversion device as above. FIG. 6 is an operation diagram for explaining the operation of the conversion device as above when the polarity of the input voltage is negative. FIG. 7A to 7C are operation diagrams for explaining the operation of the conversion device as above when the polarity of the input voltage is negative. FIG8 is a graph showing the relationship between the DC bus voltage and the output power when the switching frequency is changed in the same conversion device. FIG9 is an operation waveform diagram of the same conversion device. FIG10A is an enlarged view of the operation waveform when the output power is 100W in the same conversion device. FIG10B is an enlarged view of the operation waveform when the output power is 50W in the same conversion device. FIG11 is a circuit diagram of the conversion device according to implementation form 2. FIG12 is a circuit diagram of the conversion device according to a variation of implementation form 1.

1:轉換裝置 1:Conversion device

2:整流器 2: Rectifier

21:連接點 21: Connection point

3:半橋變流器 3: Half-bridge converter

31:第1串聯電路 31: 1st series circuit

32:第2串聯電路 32: Second series circuit

33:連接點 33: Connection point

34:第1輸出端 34: Output port 1

35:第2輸出端 35: Output port 2

4:全橋變流器 4: Full-bridge converter

41,42:串聯電路 41,42: Series circuit

44:第1輸入端 44: Input port 1

45:第2輸入端 45: Input port 2

5:控制裝置(第1控制裝置) 5: Control device (first control device)

51:第1減算部 51: 1st subtraction department

52:第1PI控制部 52: 1st PI control unit

53:第2減算部 53: Second subtraction unit

54:第2PI控制部 54: 2nd PI control unit

55:生成部 55: Generation Department

6:輸入濾波器 6: Input filter

8:交流電源 8: AC power supply

81:第1交流輸出端 81: 1st AC output terminal

82:第2交流輸出端 82: Second AC output terminal

11:第1輸入端子 11: 1st input terminal

12:第2輸入端子 12: Second input terminal

C1:第1電容器 C1: Capacitor No. 1

C2:第2電容器 C2: Second capacitor

Cf:電容器 Cf: Capacitor

D1:第1二極體 D1: Diode 1

D2:第2二極體 D2: Second diode

D3:第3二極體 D3: The third diode

D4:第4二極體 D4: Diode 4

D5:第5二極體 D5: 5th diode

D6:第6二極體 D6: Diode 6

fsw^*:切換頻率指令值 fsw ^* : Switching frequency command value

Iin:輸入電流 Iin: input current

L1:電感器 L1: Inductor

Lf:電感器 Lf: Inductor

Lin:輸入電感器 Lin: Input inductor

Tr1:變壓器 Tr1: Transformer

N1:一次線圈 N1: primary coil

N2:二次線圈 N2: Secondary coil

Q1:第1半導體開關元件 Q1: The first semiconductor switch element

Q2:第2半導體開關元件 Q2: Second semiconductor switch element

Q3:第3半導體開關元件 Q3: The third semiconductor switch component

Q4:第4半導體開關元件 Q4: 4th semiconductor switch component

Q5:第5半導體開關元件 Q5: The fifth semiconductor switch component

Q6:第6半導體開關元件 Q6: 6th semiconductor switch component

S1:第1切換信號 S1: 1st switching signal

S2:第2切換信號 S2: Second switching signal

S3:第3切換信號 S3: 3rd switching signal

S4:第4切換信號 S4: 4th switching signal

S5:第5切換信號 S5: 5th switching signal

S6:第6切換信號 S6: 6th switching signal

V1:輸出電壓 V1: output voltage

V2:輸入電壓 V2: Input voltage

Vdc:直流母線電壓 Vdc: DC bus voltage

Vdc^*:直流母線電壓指令值 Vdc ^* : DC bus voltage command value

Vo:輸出電壓 Vo: output voltage

Vo^*:輸出電壓指令值 Vo ^* : Output voltage command value

i1:電流 i1: current

i2:電流 i2: current

i_L:電流 i _L : Current

θ^*:相位差指令值 θ ^* : Phase difference command value

Vin:輸入電壓 Vin: Input voltage

13:第1輸出端子 13: 1st output terminal

14:第2輸出端子 14: Second output terminal

Claims

一種轉換裝置，包含：整流器，由第1二極體及串聯於該第1二極體之第2二極體構成，並在該第1二極體與該第2二極體之連接點連接交流電源之第1交流輸出端；半橋變流器，其包含第1半導體開關元件與第2半導體開關元件串聯之第1串聯電路，以及第1電容器與第2電容器串聯之第2串聯電路，該第2串聯電路與該第1串聯電路並聯，該第1半導體開關元件連接於該第1二極體之陰極，該第2半導體開關元件連接於第2二極體之陽極，該交流電源之第2交流輸出端連接於該第1半導體開關元件與該第2半導體開關元件之連接點；輸入電感器，連接在該交流電源與該整流器或該半橋變流器之間；變壓器，包含一次線圈及二次線圈，該一次線圈連接在該半橋變流器中之第1輸出端與第2輸出端之間，該第1輸出端係在該半橋變流器中之該第1半導體開關元件與該第2半導體開關元件之間，該第2輸出端係在該半橋變流器中之該第1電容器與該第2電容器之間；全橋變流器，連接於該變壓器之該二次線圈，並包含第3半導體開關元件、第4半導體開關元件、第5半導體開關元件及第6半導體開關元件；電感器，連接在該半橋變流器之該第1輸出端與該一次線圈之間，或該半橋變流器之該第2輸出端與該一次線圈之間，或該二次線圈與該全橋變流器之間；以及，控制裝置，控制該半橋變流器及該全橋變流器。 A conversion device, comprising: A rectifier, which is composed of a first diode and a second diode connected in series with the first diode, and a first AC output terminal of an AC power source is connected at the connection point between the first diode and the second diode; A half-bridge converter, comprising a first series circuit in which a first semiconductor switch element and a second semiconductor switch element are connected in series, and a second series circuit in which a first capacitor and a second capacitor are connected in series, the second series circuit is connected in parallel with the first series circuit, the first semiconductor switch element is connected to the cathode of the first diode, the second semiconductor switch element is connected to the anode of the second diode, and the second AC output terminal of the AC power source is connected to the connection point between the first semiconductor switch element and the second semiconductor switch element; An input inductor connected between the AC power source and the rectifier or the half-bridge converter; A transformer, comprising a primary coil and a secondary coil, wherein the primary coil is connected between the first output terminal and the second output terminal of the half-bridge converter, wherein the first output terminal is between the first semiconductor switch element and the second semiconductor switch element of the half-bridge converter, and the second output terminal is between the first capacitor and the second capacitor of the half-bridge converter; A full-bridge converter, connected to the secondary coil of the transformer, and comprising a third semiconductor switch element, a fourth semiconductor switch element, a fifth semiconductor switch element, and a sixth semiconductor switch element; An inductor connected between the first output terminal of the half-bridge converter and the primary coil, or between the second output terminal of the half-bridge converter and the primary coil, or between the secondary coil and the full-bridge converter; and, a control device for controlling the half-bridge converter and the full-bridge converter.

如請求項1所述之轉換裝置，其中，該控制裝置控制該半橋變流器之直流母線電壓，並控制該全橋變流器之輸出電壓。 A converter as described in claim 1, wherein the control device controls the DC bus voltage of the half-bridge converter and controls the output voltage of the full-bridge converter.

如請求項2所述之轉換裝置，其中，該控制裝置將控制該第1半導體開關元件之第1切換信號之工作週期設為50％，並將控制該第2半導體開關元件之第2切換信號之工作週期設為50％。 A conversion device as described in claim 2, wherein, the control device sets the duty cycle of the first switching signal for controlling the first semiconductor switch element to 50%, and sets the duty cycle of the second switching signal for controlling the second semiconductor switch element to 50%.

如請求項2或3所述之轉換裝置，其中，該控制裝置將控制該第3半導體開關元件之第3切換信號之工作週期設為50％，並將控制該第4半導體開關元件之第4切換信號之工作週期設為50％，並將控制該第5半導體開關元件之第5切換信號之工作週期設為50％，並將控制該第6半導體開關元件之第6切換信號之工作週期設為50％。 A conversion device as described in claim 2 or 3, wherein, the control device sets the duty cycle of the third switching signal for controlling the third semiconductor switch element to 50%, and sets the duty cycle of the fourth switching signal for controlling the fourth semiconductor switch element to 50%, and sets the duty cycle of the fifth switching signal for controlling the fifth semiconductor switch element to 50%, and sets the duty cycle of the sixth switching signal for controlling the sixth semiconductor switch element to 50%.

如請求項2或3所述之轉換裝置，其中，該控制裝置，控制該第1半導體開關元件及該第2半導體開關元件，以使流向該輸入電感器之電流之模式為電流不連續模式。 A conversion device as described in claim 2 or 3, wherein, the control device controls the first semiconductor switch element and the second semiconductor switch element so that the mode of the current flowing to the input inductor is a current discontinuous mode.

如請求項2或3所述之轉換裝置，其中，該控制裝置，透過基於該全橋變流器之輸出電壓指令值及該全橋變流器之輸出電壓之檢測值之PI控制，控制該半橋變流器之輸出電壓與該全橋變流器之輸入電壓之相位差。 A conversion device as described in claim 2 or 3, wherein, the control device controls the phase difference between the output voltage of the half-bridge converter and the input voltage of the full-bridge converter through PI control based on the output voltage command value of the full-bridge converter and the detection value of the output voltage of the full-bridge converter.

如請求項2或3所述之轉換裝置，其中，該控制裝置，透過基於該半橋變流器之直流母線電壓指令值及該半橋變流器之直流母線電壓之檢測值之PI控制，控制該第1半導體開關元件及該第2半導體開關元件之切換頻率，並將該第3半導體開關元件、該第4半導體開關元件、該第5半導體開關元件及該第6半導體開關元件之切換頻率設為與該第1半導體開關元件及該第2半導體開關元件之切換頻率相同。 A conversion device as described in claim 2 or 3, wherein, the control device controls the switching frequency of the first semiconductor switch element and the second semiconductor switch element through PI control based on the DC bus voltage command value of the half-bridge converter and the detection value of the DC bus voltage of the half-bridge converter, and sets the switching frequency of the third semiconductor switch element, the fourth semiconductor switch element, the fifth semiconductor switch element and the sixth semiconductor switch element to be the same as the switching frequency of the first semiconductor switch element and the second semiconductor switch element.

一種轉換裝置，包含：整流器，由第1二極體及串聯於該第1二極體之第2二極體構成，並在該第1二極體與該第2二極體之連接點連接交流電源之第1交流輸出端；第1半橋變流器，包含第1半導體開關元件與第2半導體開關元件串聯之第1串聯電路以及第1電容器與第2電容器串聯之第2串聯電路，該第2串聯電路與該第1串聯電路並聯，該第1半導體開關元件連接於該第1二極體之陰極，該第2半導體開關元件連接於第2二極體之陽極，該交流電源之第2交流輸出端連接於該第1半導體開關元件與該第2半導體開關元件之連接點；輸入電感器，連接在該交流電源與該整流器或該第1半橋變流器之間；變壓器，包含一次線圈及二次線圈，該一次線圈連接在該第1半橋變流器中之第1輸出端與第2輸出端之間，該第1輸出端係在該第1半橋變流器中之該第1半導體開關元件與該第2半導體開關元件之間，該第2輸出端係在該第1半橋變流器中之該第1電容器與該第2電容器之間；電感器，連接在該第1半橋變流器之該第1輸出端或該第2輸出端與該一次線圈之間；第2半橋變流器，連接於該變壓器之該二次線圈，並包含第3半導體開關元件、第4半導體開關元件、第3電容器及第4電容器；以及，控制裝置，控制該第1半橋變流器及該第2半橋變流器。 A conversion device, comprising: A rectifier, which is composed of a first diode and a second diode connected in series with the first diode, and a first AC output terminal of an AC power source is connected at the connection point between the first diode and the second diode; The first half-bridge converter comprises a first series circuit in which a first semiconductor switch element and a second semiconductor switch element are connected in series, and a second series circuit in which a first capacitor and a second capacitor are connected in series. The second series circuit is connected in parallel with the first series circuit. The first semiconductor switch element is connected to the cathode of the first diode, the second semiconductor switch element is connected to the anode of the second diode, and the second AC output terminal of the AC power source is connected to the connection point between the first semiconductor switch element and the second semiconductor switch element; The input inductor is connected between the AC power source and the rectifier or the first half-bridge converter; A transformer, comprising a primary coil and a secondary coil, wherein the primary coil is connected between the first output terminal and the second output terminal of the first half-bridge converter, wherein the first output terminal is between the first semiconductor switch element and the second semiconductor switch element in the first half-bridge converter, and the second output terminal is between the first capacitor and the second capacitor in the first half-bridge converter; An inductor, connected between the first output terminal or the second output terminal of the first half-bridge converter and the primary coil; A second half-bridge converter, connected to the secondary coil of the transformer, and comprising a third semiconductor switch element, a fourth semiconductor switch element, a third capacitor and a fourth capacitor; and, A control device controls the first half-bridge converter and the second half-bridge converter.

如請求項8所述之轉換裝置，其中，該控制裝置控制該第1半橋變流器之直流母線電壓，並控制該第2半橋變流器之輸出電壓。 A conversion device as described in claim 8, wherein, the control device controls the DC bus voltage of the first half-bridge converter and controls the output voltage of the second half-bridge converter.

如請求項9所述之轉換裝置，其中，該控制裝置將控制該第1半導體開關元件之第1切換信號之工作週期設為50％，並將控制該第2半導體開關元件之第2切換信號之工作週期設為50％。 A conversion device as described in claim 9, wherein, the control device sets the duty cycle of the first switching signal for controlling the first semiconductor switch element to 50%, and sets the duty cycle of the second switching signal for controlling the second semiconductor switch element to 50%.

如請求項9或10所述之轉換裝置，其中，該控制裝置將控制該第3半導體開關元件之第3切換信號之工作週期設為50％，並將控制該第4半導體開關元件之第4切換信號之工作週期設為50％。 A conversion device as described in claim 9 or 10, wherein, the control device sets the duty cycle of the third switching signal for controlling the third semiconductor switch element to 50%, and sets the duty cycle of the fourth switching signal for controlling the fourth semiconductor switch element to 50%.

如請求項9或10所述之轉換裝置，其中，該控制裝置，控制該第1半導體開關元件及該第2半導體開關元件，以使流向該輸入電感器之電流之模式為電流不連續模式。 A conversion device as described in claim 9 or 10, wherein, the control device controls the first semiconductor switch element and the second semiconductor switch element so that the mode of the current flowing to the input inductor is a current discontinuous mode.

如請求項9或10所述之轉換裝置，其中，該控制裝置，透過基於該第2半橋變流器之輸出電壓指令值及該第2半橋變流器之輸出電壓之檢測值之PI控制，控制該第1半橋變流器之輸出電壓與該第2半橋變流器之輸入電壓之相位差。 A conversion device as described in claim 9 or 10, wherein, the control device controls the phase difference between the output voltage of the first half-bridge converter and the input voltage of the second half-bridge converter through PI control based on the output voltage command value of the second half-bridge converter and the detection value of the output voltage of the second half-bridge converter.

如請求項9或10所述之轉換裝置，其中，該控制裝置，透過基於該第1半橋變流器之直流母線電壓指令值及該第1半橋變流器之直流母線電壓之檢測值之PI控制，控制該第1半導體開關元件及該第2半導體開關元件之切換頻率，並將該第3半導體開關元件及該第4半導體開關元件之切換頻率設為與該第1半導體開關元件及該第2半導體開關元件之切換頻率相同。 A conversion device as described in claim 9 or 10, wherein, the control device controls the switching frequency of the first semiconductor switch element and the second semiconductor switch element through PI control based on the DC bus voltage command value of the first half-bridge converter and the detection value of the DC bus voltage of the first half-bridge converter, and sets the switching frequency of the third semiconductor switch element and the fourth semiconductor switch element to be the same as the switching frequency of the first semiconductor switch element and the second semiconductor switch element.