TWI843983B

TWI843983B - Multi-chamber semiconductor manufacturing system

Info

Publication number: TWI843983B
Application number: TW111102974A
Authority: TW
Inventors: 吳學憲; 詹志遠; 賴奕廷
Original assignee: 矽碁科技股份有限公司
Filing date: 2022-01-24
Publication date: 2024-06-01

Abstract

A multi-chamber semiconductor manufacturing system is provided, including: a base, including a base body and a plurality of supporting frames protrudingly disposed on a mounting surface of the base body; a plurality of processing units, connected to the plurality of supporting frames; and a transmission unit, connected to the plurality of supporting frames and located between the plurality of processing units, configured to transmit a substrate between the plurality of processing units; wherein the base has an aspect ratio between 1 and 3.

Description

多腔室半導體製程系統Multi-chamber semiconductor process system

本發明係與半導體製程系統有關，特別是有關於一種多腔室半導體製程系統。The present invention relates to a semiconductor process system, and more particularly to a multi-chamber semiconductor process system.

真空技術在半導體工業中扮演重要的角色，例如濺鍍、微影及蝕刻等製程皆需於真空腔體中進行，藉以減少氣體分子對試片加工之影響，有效確保生產品質。Vacuum technology plays an important role in the semiconductor industry. For example, processes such as sputtering, lithography and etching must be performed in a vacuum chamber to reduce the impact of gas molecules on sample processing and effectively ensure product quality.

於半導體製程中，一般會將多種製程儀器分別連接於一傳輸室，並於該傳輸室設置至少一機械手臂以於多個製程室及存放空間之間進行晶圓的傳遞，以達到自動化製程、提高生產效率之效果。然而，該些製程儀器係各自獨立的落地式裝置，若規格相異時易有組裝不便、穩定性不佳之疑慮，且該些製程儀器與該傳輸室組裝後不便於移動。此外，此類真空系統具有體積大、建構成本高等缺點，於小批量生產或研發測試階段中易造成成本之浪費，且製造時間長，生產效益不佳。In semiconductor manufacturing, generally, multiple process instruments are connected to a transfer chamber, and at least one robot is installed in the transfer chamber to transfer wafers between multiple process chambers and storage spaces, so as to achieve the effect of automating the process and improving production efficiency. However, these process instruments are independent floor-standing devices. If the specifications are different, it is easy to have inconvenient assembly and poor stability. Moreover, these process instruments and the transfer chamber are not easy to move after assembly. In addition, this type of vacuum system has the disadvantages of large size and high construction cost, which is easy to cause cost waste in small-batch production or R&D testing stages, and the manufacturing time is long, and the production efficiency is poor.

因此，有必要提供一種新穎且具有進步性之多腔室半導體製程系統，以解決上述之問題。Therefore, it is necessary to provide a novel and advanced multi-chamber semiconductor process system to solve the above-mentioned problems.

本發明之主要目的在於提供一種多腔室半導體製程系統，體積小且便於組裝、移動。The main purpose of the present invention is to provide a multi-chamber semiconductor process system that is small in size and easy to assemble and move.

為達成上述目的，本發明提供一種多腔室半導體製程系統，包括：一機座，包括一座體及凸設於該座體之一設置面之複數支撐架；複數製程單元，連接於該複數支撐架；及一傳輸單元，連接於該複數支撐架且位於該複數製程單元之間，供於該複數製程單元之間取送一基板；其中，該機座之一長寬比值介於1至3。To achieve the above-mentioned purpose, the present invention provides a multi-chamber semiconductor process system, including: a machine base, including a base body and a plurality of support frames protruding from a setting surface of the base body; a plurality of process units connected to the plurality of support frames; and a transmission unit connected to the plurality of support frames and located between the plurality of process units, for taking and delivering a substrate between the plurality of process units; wherein an aspect ratio of the machine base is between 1 and 3.

以下僅以實施例說明本發明可能之實施態樣，然並非用以限制本發明所欲保護之範疇，合先敘明。The following examples are merely used to illustrate possible implementations of the present invention, but are not intended to limit the scope of protection of the present invention, so it should be noted in advance.

請參考圖1至6，其顯示本發明之一較佳實施例，本發明之多腔室半導體製程系統1包括一機座10、複數製程單元20及一傳輸單元30。Please refer to FIGS. 1 to 6 , which show a preferred embodiment of the present invention. The multi-chamber semiconductor process system 1 of the present invention includes a base 10, a plurality of process units 20 and a transmission unit 30.

該機座10包括一座體11及凸設於該座體11之一設置面111之複數支撐架12；該複數製程單元20連接於該複數支撐架12；該傳輸單元30連接於該複數支撐架12且位於該複數製程單元20之間且供於該複數製程單元20之間取送一基板；其中，該機座10之一長寬比值介於1至3。藉此，該複數製程單元20整合連接於該機座10上，可緊湊配置以縮小整體體積，且該多腔室半導體製程系統1便於組裝及移動。The machine base 10 includes a base body 11 and a plurality of support frames 12 protruding from a setting surface 111 of the base body 11; the plurality of process units 20 are connected to the plurality of support frames 12; the transmission unit 30 is connected to the plurality of support frames 12 and is located between the plurality of process units 20 and is used to take and deliver a substrate between the plurality of process units 20; wherein an aspect ratio of the machine base 10 is between 1 and 3. Thus, the plurality of process units 20 are integrated and connected to the machine base 10, and can be compactly configured to reduce the overall volume, and the multi-chamber semiconductor process system 1 is easy to assemble and move.

該傳輸單元30包括一傳輸腔室31，該傳輸腔室31周設複數第一取送通道311，各該製程單元20包括一處理腔室21，各該處理腔室21包括一連通於該處理腔室21內部且可對應連通於一該第一取送通道311之第二取送通道211，可供設於該傳輸腔室31內之移動手臂於該處理腔室21與該傳輸腔室31之間取送該基板，以達到自動化生產之目的。該傳輸腔室31包括複數轉折連接之側壁312，各該側壁312設有一該第一取送通道311，相鄰之二該側壁312之間之夾角不小於120度，藉此該複數製程單元20與該傳輸單元30可較緊湊地配置，且可組接之該複數製程單元20的數量亦多。較佳地，各該側壁312另設有一環繞一該第一取送通道311之密封件313，藉以有效保持內部真空，組接穩定性佳；當任一該第一取送通道311未與一該第二取送通道211相連通時（即未連接一該處理腔室21時），可藉由一蓋板314氣體密封地遮蔽該第一取送通道311，藉以保持該傳輸腔室31內之氣體密封狀態。也就是說，該傳輸單元30可依製程需求選擇性地連接一個或多個該製程單元20，該複數製程單元20例如但不限包括化學氣相沉積系統、濺鍍系統、熱蒸鍍系統、原子沉積系統及蝕刻系統等，配置自由度高、使用便利性佳。The transfer unit 30 includes a transfer chamber 31, and a plurality of first pick-up and delivery channels 311 are arranged around the transfer chamber 31. Each of the process units 20 includes a processing chamber 21, and each of the processing chambers 21 includes a second pick-up and delivery channel 211 connected to the interior of the processing chamber 21 and correspondingly connected to one of the first pick-up and delivery channels 311, so that a moving arm arranged in the transfer chamber 31 can pick up and deliver the substrate between the processing chamber 21 and the transfer chamber 31, so as to achieve the purpose of automated production. The transfer chamber 31 includes a plurality of folded and connected side walls 312, each of which is provided with a first pick-up and delivery channel 311, and the angle between two adjacent side walls 312 is not less than 120 degrees, thereby the plurality of process units 20 and the transfer unit 30 can be arranged more compactly, and the number of the plurality of process units 20 that can be assembled is also large. Preferably, each of the side walls 312 is further provided with a sealing member 313 surrounding a first pick-up channel 311, so as to effectively maintain internal vacuum and improve assembly stability; when any of the first pick-up channels 311 is not connected to a second pick-up channel 211 (i.e., not connected to a processing chamber 21), the first pick-up channel 311 can be gas-tightly shielded by a cover plate 314 to maintain the gas-tight state in the transfer chamber 31. In other words, the transfer unit 30 can be selectively connected to one or more of the process units 20 according to process requirements, and the multiple process units 20 include, for example but not limited to, chemical vapor deposition systems, sputtering systems, thermal evaporation systems, atomic deposition systems, and etching systems, etc., with high configuration freedom and good convenience.

較佳地，該機座10之一長度及一寬度皆不大於1.8公尺，有效減少該多腔室半導體製程系統1之占地面積；沿該機座10之一高度方向觀之，各該製程單元20不突出於該機座10，便於配置且可避免於移機時碰撞損壞。於本實施例中，沿該高度方向觀之，該機座10具有一呈矩形之外輪廓，該機座10之一長度介於0.9至1.2公尺，該機座10之一寬度介於1.2至1.5公尺；沿該高度方向觀之，該傳輸腔室31具有一呈八角形之外輪廓，相鄰之二該側壁312之間之夾角為135度，如圖2所示，藉此該傳輸單元30可連接至少六該製程單元20，以進行多樣化之加工製程。該座體11相異於該設置面111之一側設有複數腳輪13，便於移動該多腔室半導體製程系統1。於其他實施例中，沿該高度方向觀之，各該製程單元亦可至少2/3位於該機座之最外輪廓內；該機座及該傳輸腔室亦可配置為具有其他形狀之外輪廓。Preferably, the length and width of the machine base 10 are both no greater than 1.8 meters, which effectively reduces the floor space occupied by the multi-chamber semiconductor process system 1; viewed along the height direction of the machine base 10, each of the process units 20 does not protrude from the machine base 10, which facilitates configuration and avoids collision damage during machine relocation. In this embodiment, the machine base 10 has a rectangular outer contour when viewed along the height direction, a length of the machine base 10 is between 0.9 and 1.2 meters, and a width of the machine base 10 is between 1.2 and 1.5 meters; when viewed along the height direction, the transmission chamber 31 has an octagonal outer contour, and the angle between two adjacent side walls 312 is 135 degrees, as shown in FIG. 2, whereby the transmission unit 30 can be connected to at least six process units 20 to perform a variety of processing processes. The base 11 is provided with a plurality of casters 13 on one side of the setting surface 111 to facilitate the movement of the multi-chamber semiconductor process system 1. In other embodiments, when viewed along the height direction, at least 2/3 of each process unit may be located within the outermost contour of the base; the base and the transfer chamber may also be configured to have outer contours of other shapes.

該複數支撐架12至少部分可拆卸地連接於該設置面111，如圖4所示，可依需求裝設以符合不同配置需求；該複數支撐架12至少部分一體成形於該座體11，用以組裝該傳輸單元30等固有設備。詳細說，各該製程單元20相對遠離該傳輸單元30之一側設有一連接組件22，該連接組件22包括至少一連接一該製程單元20之抵接件221及至少一連接一該抵接件221與一該支撐架12之接桿222。配合參考圖3及圖4，各該支撐架12遠離該設置面111之一端包括一接孔121及一缺槽122，各該接桿222穿設於一該接孔121且部分顯露於一該缺槽122，便於對位組裝。各該處理腔室21之一底壁於遠離該傳輸腔室31之一側設有二間隔相對之卡槽212，各該抵接件221嵌設於一該卡槽212，組接穩定性佳；各該抵接件221包括至少一第一鎖孔221a及一第二鎖孔221b，至少一鎖固件223穿設於該至少一第一鎖孔221a並連接一該抵接件221與一該處理腔室21；各該接桿222為一穿設於該第二鎖孔221b之螺桿，複數螺母224鎖接於該螺桿且可分別與一該抵接件221及一該支撐架12抵接，藉由調整該複數螺母224與該螺桿之相對位置即可調整各該處理腔室21之高度。較佳地，該連接組件22另包括一可拆卸地跨接於相鄰之二該支撐架12之補強架225，一該製程單元20部分位於該二支撐架12與該補強架225之間，增加組裝穩定性。The plurality of support frames 12 are at least partially detachably connected to the installation surface 111, as shown in FIG. 4, and can be installed as required to meet different configuration requirements; the plurality of support frames 12 are at least partially integrally formed on the base 11, and are used to assemble the transmission unit 30 and other inherent equipment. In detail, each process unit 20 is provided with a connection assembly 22 on a side relatively far from the transmission unit 30, and the connection assembly 22 includes at least one abutment 221 connected to the process unit 20 and at least one connecting rod 222 connected to the abutment 221 and the support frame 12. With reference to FIG. 3 and FIG. 4 , each support frame 12 includes a connection hole 121 and a notch 122 at one end away from the setting surface 111. Each connecting rod 222 is inserted into one of the connection holes 121 and partially exposed in one of the notches 122, which is convenient for alignment and assembly. A bottom wall of each processing chamber 21 is provided with two spaced opposite slots 212 on one side away from the transmission chamber 31. Each abutting member 221 is embedded in one of the slots 212, which has good assembly stability. Each abutting member 221 includes at least one first locking hole 221a and one second locking hole 221b. At least one locking member 223 is inserted into the at least one first locking hole 221. a and connects one of the abutting members 221 and one of the processing chambers 21; each of the connecting rods 222 is a screw rod penetrating the second locking hole 221b, and a plurality of nuts 224 are locked on the screw rod and can respectively abut against one of the abutting members 221 and one of the supporting frames 12. By adjusting the relative positions of the plurality of nuts 224 and the screw rod, the height of each of the processing chambers 21 can be adjusted. Preferably, the connecting assembly 22 further includes a reinforcing frame 225 detachably straddling two adjacent supporting frames 12, and a portion of the process unit 20 is located between the two supporting frames 12 and the reinforcing frame 225 to increase assembly stability.

該多腔室半導體製程系統1另包括一負載鎖定單元40及一抽氣單元50，於該座體11之一長度方向上，該負載鎖定單元40與該抽氣單元50位於該傳輸單元30之相對二側，該負載鎖定單元40供載入及載出該基板，減少壓力變化以保持該傳輸腔室31內之真空狀態，該抽氣單元50供排出來自該傳輸單元30之氣體，維持該傳輸腔室31內之真空度，便於連續加工製造且加工品質佳。該多腔室半導體製程系統1較佳可另包括一電性連接該複數製程單元20、該傳輸單元30、該負載鎖定單元40及該抽氣單元50之操作顯示介面70，可供整合控制前述各單元之參數條件及作動，便於操作。於其他實施例中，來自該複數製程單元之氣體亦可藉由該抽氣單元排出，藉以整合各氣體排放管路，有效減少配置空間以助於小型化。The multi-chamber semiconductor process system 1 further includes a load locking unit 40 and an exhaust unit 50. In a length direction of the base 11, the load locking unit 40 and the exhaust unit 50 are located on opposite sides of the transfer unit 30. The load locking unit 40 is used to load and unload the substrate to reduce pressure changes to maintain the vacuum state in the transfer chamber 31. The exhaust unit 50 is used to exhaust the gas from the transfer unit 30 to maintain the vacuum level in the transfer chamber 31, which is convenient for continuous processing and manufacturing with good processing quality. The multi-chamber semiconductor process system 1 preferably further includes an operation display interface 70 electrically connected to the plurality of process units 20, the transmission unit 30, the load lock unit 40 and the exhaust unit 50, which can be used to integrate and control the parameter conditions and actions of the aforementioned units for easy operation. In other embodiments, the gas from the plurality of process units can also be exhausted through the exhaust unit, thereby integrating the gas exhaust pipelines, effectively reducing the configuration space and facilitating miniaturization.

配合參考圖5，該負載鎖定單元40面向該傳輸腔室31之一側壁312凸設一卡扣件41，該傳輸腔室31另包括一對應於該卡扣件41且沿該高度方向延伸之剖槽315，該剖槽315包括相互連通之一大徑段315a及一小徑段315b，該卡扣件41包括一容設於該大徑段315a之頭部411及一容設於該小徑段315b之身部412，可穩定地相定位組裝。各該製程單元20及該負載鎖定單元40之相對二側另設有複數鎖接件60，各該鎖接件60之一端螺接於該傳輸腔室31之一該側壁312、另一端朝該傳輸腔室31之一側迫抵於該複數製程單元20及該負載鎖定單元40其中一者，藉以使各該製程單元20及該負載鎖定單元40可分別與該傳輸腔室31之一該側壁312相互緊靠，密合度佳。較佳地，各該側壁312設有位於該第一取送通道311相對二側之二第一定位部316，該複數處理腔室21及該負載鎖定單元40分別設有二可與該二第一定位部316相對應地連接之第二定位部413。於本實施例中，各該第一定位部316為一凹孔，各該第二定位部413為一可插接於一該凹孔之凸柱，藉以穩定地定位組裝。然，該第一定位部及該第二定位部之數量亦可依需求變更；該第一定位部及該第二定位部之形狀亦可設置為其他構型。5 , a latch 41 is protruded from a side wall 312 of the load locking unit 40 facing the transmission chamber 31. The transmission chamber 31 further includes a slot 315 corresponding to the latch 41 and extending along the height direction. The slot 315 includes a large diameter section 315a and a small diameter section 315b that are interconnected. The latch 41 includes a head 411 accommodated in the large diameter section 315a and a body 412 accommodated in the small diameter section 315b, which can be stably positioned and assembled. A plurality of locking members 60 are further provided on opposite sides of each of the process units 20 and the load locking unit 40. One end of each of the locking members 60 is screwed to one of the side walls 312 of the transfer chamber 31, and the other end is pressed against one of the plurality of process units 20 and the load locking unit 40 toward one side of the transfer chamber 31, so that each of the process units 20 and the load locking unit 40 can be closely abutted against one of the side walls 312 of the transfer chamber 31, respectively, with good tightness. Preferably, each of the side walls 312 is provided with two first positioning portions 316 located at two opposite sides of the first pick-up and delivery channel 311, and the plurality of processing chambers 21 and the load lock unit 40 are respectively provided with two second positioning portions 413 that can be connected to the two first positioning portions 316 in a corresponding manner. In this embodiment, each of the first positioning portions 316 is a concave hole, and each of the second positioning portions 413 is a convex column that can be inserted into one of the concave holes to stably position and assemble. However, the number of the first positioning portions and the second positioning portions can also be changed according to needs; the shapes of the first positioning portions and the second positioning portions can also be set to other configurations.

1:多腔室半導體製程系統 10:機座 11:座體 111:設置面 12:支撐架 121:接孔 122:缺槽 13:腳輪 20:製程單元 21:處理腔室 211:第二取送通道 212:卡槽 22:連接組件 221:抵接件 221a:第一鎖孔 221b:第二鎖孔 222:接桿 223:鎖固件 224:螺母 225:補強架 30:傳輸單元 31:傳輸腔室 311:第一取送通道 312:側壁 313:密封件 314:蓋板 315:剖槽 315a:大徑段 315b:小徑段 316:第一定位部 40:負載鎖定單元 41:卡扣件 411:頭部 412:身部 413:第二定位部 50:抽氣單元 60:鎖接件 70:操作顯示介面 1: Multi-chamber semiconductor process system 10: Machine base 11: Base body 111: Setting surface 12: Support frame 121: Connection hole 122: Slot 13: Caster 20: Process unit 21: Processing chamber 211: Second pick-up and delivery channel 212: Slot 22: Connecting assembly 221: Abutment 221a: First lock hole 221b: Second lock hole 222: Connector 223: Locking piece 224: Nut 225: Reinforcement frame 30: Transmission unit 31: Transmission chamber 311: First pick-up and delivery channel 312: Side wall 313: Seal 314: Cover plate 315: slot 315a: large diameter section 315b: small diameter section 316: first positioning section 40: load locking unit 41: buckle 411: head 412: body 413: second positioning section 50: exhaust unit 60: locking piece 70: operation display interface

圖1為本發明一較佳實施例之立體圖。圖2為本發明一較佳實施例之俯視圖。圖3為本發明一較佳實施例之一連接組件與一製程單元之分解圖。圖4為本發明一較佳實施例之局部立體圖。圖5為本發明一較佳實施例之局部放大分解圖。圖6為本發明一較佳實施例之另一局部立體圖。 Figure 1 is a three-dimensional diagram of a preferred embodiment of the present invention. Figure 2 is a top view of a preferred embodiment of the present invention. Figure 3 is an exploded view of a connecting component and a process unit of a preferred embodiment of the present invention. Figure 4 is a partial three-dimensional diagram of a preferred embodiment of the present invention. Figure 5 is a partial enlarged exploded diagram of a preferred embodiment of the present invention. Figure 6 is another partial three-dimensional diagram of a preferred embodiment of the present invention.

1:多腔室半導體製程系統 1: Multi-chamber semiconductor process system

10:機座 10: Base

111:設置面 111: Setting surface

12:支撐架 12: Support frame

13:腳輪 13: Casters

20:製程單元 20: Processing unit

22:連接組件 22: Connection components

225:補強架 225: Reinforcement

30:傳輸單元 30: Transmission unit

70:操作顯示介面 70: Operation display interface

Claims

一種多腔室半導體製程系統，包括：一機座，包括一座體及凸設於該座體之一設置面之複數支撐架；複數製程單元，連接於該複數支撐架；及一傳輸單元，連接於該複數支撐架且位於該複數製程單元之間，供於該複數製程單元之間取送一基板；其中，該機座之一長寬比值介於1至3；該傳輸單元包括一傳輸腔室，該傳輸腔室周設複數第一取送通道，各該製程單元包括一處理腔室，各該處理腔室包括一連通於該處理腔室內部且可對應連通於一該第一取送通道之第二取送通道。 A multi-chamber semiconductor process system includes: a machine base, including a base body and a plurality of support frames protruding from a setting surface of the base body; a plurality of process units connected to the plurality of support frames; and a transmission unit connected to the plurality of support frames and located between the plurality of process units for taking and delivering a substrate between the plurality of process units; wherein an aspect ratio of the machine base is between 1 and 3; the transmission unit includes a transmission chamber, and a plurality of first delivery channels are arranged around the transmission chamber, each of the process units includes a processing chamber, and each of the processing chambers includes a second delivery channel connected to the inside of the processing chamber and correspondingly connected to one of the first delivery channels.

如請求項1所述的多腔室半導體製程系統，其中沿該機座之一高度方向觀之，各該製程單元不突出於該機座。 A multi-chamber semiconductor process system as described in claim 1, wherein each of the process units does not protrude from the base when viewed along a height direction of the base.

如請求項1所述的多腔室半導體製程系統，其中該傳輸腔室包括複數轉折連接之側壁，各該側壁設有一該第一取送通道，相鄰之二該側壁之間之夾角不小於120度。 A multi-chamber semiconductor process system as described in claim 1, wherein the transfer chamber includes a plurality of side walls connected by turns, each of the side walls is provided with a first pick-up and delivery channel, and the angle between two adjacent side walls is not less than 120 degrees.

如請求項1所述的多腔室半導體製程系統，其中各該製程單元相對遠離該傳輸單元之一側設有一連接組件，該連接組件包括至少一連接一該製程單元之抵接件及至少一連接一該抵接件與一該支撐架之接桿。 A multi-chamber semiconductor process system as described in claim 1, wherein each process unit is provided with a connection assembly on a side relatively far from the transmission unit, and the connection assembly includes at least one abutment member connected to the process unit and at least one connecting rod connecting the abutment member and the support frame.

如請求項4所述的多腔室半導體製程系統，其中各該支撐架遠離該設置面之一端包括一接孔及一缺槽，各該接桿穿設於一該接孔且部分顯露於一該缺槽。 As described in claim 4, the multi-chamber semiconductor process system, wherein each of the support frames includes a connection hole and a notch at one end away from the installation surface, and each of the connecting rods is inserted through one of the connection holes and partially exposed in one of the notches.

如請求項1所述的多腔室半導體製程系統，其中該複數支撐架至少部分可拆卸地連接於該設置面。 A multi-chamber semiconductor process system as described in claim 1, wherein the plurality of support frames are at least partially detachably connected to the mounting surface.

如請求項1所述的多腔室半導體製程系統，其中該機座之一長度及一寬度皆不大於1.8公尺。 A multi-chamber semiconductor process system as described in claim 1, wherein a length and a width of the base are both no greater than 1.8 meters.

如請求項1至7其中任一項所述的多腔室半導體製程系統，另包括一負載鎖定單元及一抽氣單元，其中於該座體之一長度方向上，該負載鎖定單元與該抽氣單元位於該傳輸單元之相對二側，該負載鎖定單元供載入及載出該基板，該抽氣單元供排出來自該傳輸單元之氣體。 The multi-chamber semiconductor process system as described in any one of claims 1 to 7 further comprises a load locking unit and an exhaust unit, wherein in a length direction of the base, the load locking unit and the exhaust unit are located on opposite sides of the transmission unit, the load locking unit is used for loading and unloading the substrate, and the exhaust unit is used for exhausting the gas from the transmission unit.

如請求項3所述的多腔室半導體製程系統，其中沿該機座之一高度方向觀之，各該製程單元不突出於該機座；各該製程單元相對遠離該傳輸單元之一側設有一連接組件，該連接組件包括至少一連接一該製程單元之抵接件及至少一連接一該抵接件與一該支撐架之接桿；各該支撐架遠離該設置面之一端包括一接孔及一缺槽，各該接桿穿設於一該接孔且部分顯露於一該缺槽；該複數支撐架至少部分可拆卸地連接於該設置面；該複數支撐架至少部分一體成形於該座體；各該處理腔室之一底壁於遠離該傳輸腔室之一側設有二間隔相對之卡槽，各該抵接件嵌設於一該卡槽；各該抵接件包括至少一第一鎖孔及一第二鎖孔，至少一鎖固件穿設於該至少一第一鎖孔並連接一該抵接件與一該處理腔室；各該接桿為一穿設於該第二鎖孔之螺桿，複數螺母鎖接於該螺桿且可分別與一該抵接件及一該支撐架抵接；該連接組件另包括一可拆卸地跨接於相鄰之二該支撐架之補強架，一該製程單元部分位於該二支撐架與該補強架之間；沿該高度方向觀之，該機座具有一呈矩形之外輪廓，該機座之一長度介於0.9至1.2公尺，該機座之一寬度介於1.2至1.5公尺；沿該高度方向觀之，該傳輸腔室具有一呈八角形之外輪廓，相鄰之二該側壁之間之夾角為135度；該多腔室半導體製程系統另包括一負載鎖定單元及一抽氣單元，於該座體之一長度方向上，該負載鎖定單元與該抽氣單元位於該傳輸單元之相對二側，該負載鎖定單元供載入及載出該基板，該抽氣單元供排出來自該傳輸單元之氣體；該負載鎖定單元面向該傳輸腔室之一側壁凸設一卡扣件，該傳輸腔室另包括一對應於該卡扣件且沿該高度方向延伸之剖槽，該剖槽包括相互連通之一大徑段及一小徑段，該卡扣件包括一容設於該大徑段之頭部及一容設於該小徑段之身部；各該製程單元及該負載鎖定單元之相對二側另設有複數鎖接件，各該鎖接件之一端螺接於該傳輸腔室之一該側壁、另一端朝該傳輸腔室之一側迫抵於該複數製程單元及該負載鎖定單元其中一者；各該側壁設有位於該第一取送通道相對二側之二第一定位部，該複數處理腔室及該負載鎖定單元分別設有二可與該二第一定位部相對應地連接之第二定位部；該多腔室半導體製程系統另包括一電性連接該複數製程單元、該傳輸單元、該負載鎖定單元及該抽氣單元之操作顯示介面；及該座體相異於該設置面之一側設有複數腳輪。 A multi-chamber semiconductor process system as described in claim 3, wherein each process unit does not protrude from the machine base when viewed along a height direction of the machine base; each process unit is provided with a connection assembly on a side relatively far from the transmission unit, and the connection assembly includes at least one abutment member connected to one process unit and at least one connecting rod connecting one abutment member and one support frame; each support frame includes a connection hole and a notch at one end far from the setting surface, and each connecting rod is passed through one of the connection holes and partially exposed in one of the notches; the plurality of support frames are at least partially detachably connected to the setting surface; the plurality of support frames are at least partially integrally formed on the base; a bottom wall of each processing chamber is provided with two spaced-apart slots on a side far from the transmission chamber, Each of the abutting members is embedded in one of the card slots; each of the abutting members includes at least one first lock hole and a second lock hole, at least one locking member is passed through the at least one first lock hole and connects one of the abutting members and one of the processing chambers; each of the connecting rods is a screw rod passed through the second lock hole, a plurality of nuts are locked on the screw rod and can respectively abut against one of the abutting members and one of the supporting frames; the connecting assembly The device further comprises a reinforcing frame detachably connected to two adjacent supporting frames, and a portion of the process unit is located between the two supporting frames and the reinforcing frame; viewed along the height direction, the machine base has a rectangular outer contour, a length of the machine base is between 0.9 and 1.2 meters, and a width of the machine base is between 1.2 and 1.5 meters; viewed along the height direction, The transfer chamber has an octagonal outer contour, and the angle between the two adjacent side walls is 135 degrees; the multi-chamber semiconductor process system also includes a load locking unit and a vacuum unit. In a length direction of the base, the load locking unit and the vacuum unit are located on two opposite sides of the transfer unit. The load locking unit is used to load and unload the substrate. The exhaust unit is used to exhaust the gas from the transmission unit; the load locking unit is provided with a buckle on a side wall facing the transmission chamber, and the transmission chamber further includes a section groove corresponding to the buckle and extending along the height direction, the section groove includes a large diameter section and a small diameter section connected to each other, and the buckle includes a head portion accommodated in the large diameter section and a head portion accommodated in the small diameter section. The body of the diameter section; the two opposite sides of each process unit and the load locking unit are further provided with a plurality of locking parts, one end of each locking part is screwed to one of the side walls of the transmission chamber, and the other end is pressed against one of the plurality of process units and the load locking unit toward one side of the transmission chamber; each of the side walls is provided with two first positioning parts located on the two opposite sides of the first pick-up and delivery channel, The plurality of processing chambers and the load locking unit are respectively provided with two second positioning parts that can be connected to the two first positioning parts in correspondence; the multi-chamber semiconductor process system further includes an operation display interface electrically connected to the plurality of process units, the transmission unit, the load locking unit and the exhaust unit; and the base body is provided with a plurality of casters on one side of the setting surface.