TWI842560B

TWI842560B - Light emitting element and display device

Info

Publication number: TWI842560B
Application number: TW112121720A
Authority: TW
Inventors: 鄭玄宗; 施景耀; 王錚亮; 林冠亨
Original assignee: 友達光電股份有限公司
Filing date: 2023-06-09
Publication date: 2024-05-11

Abstract

A light-emitting element includes a buffer layer, microstructures, a first type semiconductor layer, an active layer, a second type semiconductor layer, a first electrode and a second electrode. The microstructures are disposed on the buffer layer. The first type semiconductor layer is disposed on the buffer layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. A material of the buffer layer is different from a material of the microstructures. In addition, a display device including the light-emitting element is also provided.

Description

發光元件及顯示裝置Light emitting element and display device

本發明是有關於一種光電元件及光電裝置，且特別是有關於一種發光元件及顯示裝置。The present invention relates to an optoelectronic element and an optoelectronic device, and in particular to a light-emitting element and a display device.

發光二極體顯示面板包括驅動背板及被轉置於驅動背板上的發光二極體元件。繼承發光二極體的特性，發光二極體顯示面板具有省電、高效率、高亮度及反應時間快等優點。此外，相較於有機發光二極體顯示面板，發光二極體顯示面板還具有色彩易調校、發光壽命長、無影像烙印等優勢。因此，發光二極體顯示面板被視為下一世代的顯示技術。The LED display panel includes a driving backplane and LED elements transferred to the driving backplane. Inheriting the characteristics of LEDs, LED display panels have advantages such as power saving, high efficiency, high brightness and fast response time. In addition, compared with organic LED display panels, LED display panels also have advantages such as easy color adjustment, long luminous life and no image burn-in. Therefore, LED display panels are regarded as the next generation of display technology.

然而，發光二極體元件的上表面不平整，導致環境光穿過圓偏振片且被發光二極體元件之不平整的上表面反射後，無法完全被圓偏振光阻擋而傳遞至外界，造成解偏現象。發光二極體顯示面板在未致能下，反射率過高而偏亮。此外，由於發光二極體元件的上表面不平整，在強光照射下，發光二極體顯示面板還會出現彩虹紋的問題，影響發光二極體顯示面板的光學表現。However, the top surface of the LED element is uneven, which causes the ambient light to pass through the circular polarizer and be reflected by the uneven top surface of the LED element. It cannot be completely blocked by the circular polarized light and transmitted to the outside world, causing depolarization. When the LED display panel is not enabled, the reflectivity is too high and it is bright. In addition, due to the uneven top surface of the LED element, the LED display panel will also have rainbow pattern problems under strong light, affecting the optical performance of the LED display panel.

本發明提供一種發光元件，光學表現佳。The present invention provides a light-emitting element with good optical performance.

本發明提供一種顯示裝置，光學表現佳。The present invention provides a display device with good optical performance.

本發明的發光元件包括緩衝層、多個微結構、第一型半導體層、主動層、第二型半導體層、第一電極及第二電極。多個微結構設置於緩衝層上。第一型半導體層設置於緩衝層上。主動層設置於第一型半導體層上。第二型半導體層設置於主動層上。第一電極電性連接至第一型半導體層。第二電極電性連接至第二型半導體層。緩衝層的材質與微結構的材質不同。The light-emitting element of the present invention includes a buffer layer, a plurality of microstructures, a first type semiconductor layer, an active layer, a second type semiconductor layer, a first electrode and a second electrode. The plurality of microstructures are arranged on the buffer layer. The first type semiconductor layer is arranged on the buffer layer. The active layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the active layer. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. The material of the buffer layer is different from the material of the microstructure.

本發明的顯示裝置包括上述的發光元件及驅動背板，其中發光元件電性連接至驅動背板，且發光元件的緩衝層具有出光面。The display device of the present invention comprises the above-mentioned light-emitting element and a driving backplane, wherein the light-emitting element is electrically connected to the driving backplane, and the buffer layer of the light-emitting element has a light-emitting surface.

現將詳細地參考本發明的示範性實施例，示範性實施例的實例說明於附圖中。只要有可能，相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and description to represent the same or similar parts.

應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時，不存在中間元件。如本文所使用的，“連接”可以指物理及/或電性連接。再者，“電性連接”或“耦合”可以是二元件間存在其它元件。It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between two elements.

本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量（即，測量系統的限制）。例如，“約”可以表示在所述值的一個或多個標準偏差內，或±30％、±20％、±10％、±5％內。再者，本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes the stated value and the average value within an acceptable deviation range of a particular value determined by a person of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property, or other property, and can apply to all properties without using a single standard deviation.

除非另有定義，本文使用的所有術語（包括技術和科學術語）具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義，並且將不被解釋為理想化的或過度正式的意義，除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by ordinary technicians in the field to which the present invention belongs. It will be further understood that those terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless expressly defined as such in this document.

圖1A至圖1F為本發明一實施例之顯示裝置的製造流程的剖面示意圖。1A to 1F are cross-sectional schematic diagrams of a manufacturing process of a display device according to an embodiment of the present invention.

請參照圖1A，首先，在生長基板110上形成緩衝層120。生長基板110用以沉積緩衝層120。緩衝層120用以和生長基板110分離。在本實施例中，緩衝層120還用以供未摻雜的磊晶層140（繪示於圖1C）成長。舉例而言，在本實施例中，生長基板110的材質可包括藍寶石（Sapphire），緩衝層120的材質可包括氮化鋁（AlN）、氮化鎵（GaN）、氧化鋅（ZnO）、氮化銦鎵（GaInN）、氮化銦（InN）或氮化鋁鎵（AlGaN），但本發明不以此為限。1A , first, a buffer layer 120 is formed on a growth substrate 110 . The growth substrate 110 is used to deposit the buffer layer 120 . The buffer layer 120 is used to be separated from the growth substrate 110 . In this embodiment, the buffer layer 120 is also used for growing an undoped epitaxial layer 140 (shown in FIG. 1C ). For example, in this embodiment, the material of the growth substrate 110 may include sapphire, and the material of the buffer layer 120 may include aluminum nitride (AlN), gallium nitride (GaN), zinc oxide (ZnO), indium gallium nitride (GaInN), indium nitride (InN) or aluminum gallium nitride (AlGaN), but the present invention is not limited thereto.

請參照圖1B，接著，在緩衝層120上形成多個微結構130。多個微結構130設置於緩衝層120上。微結構130的材質與緩衝層120的材質不同。微結構130用以減少磊晶層140（繪示於圖1C）成長時的缺陷密度。在本實施例中，多個微結構130彼此分離，但本發明不以此為限。舉例而言，在本實施例中，微結構130的材質可包括氧化鋁（Al ₂O ₃）、氧化矽（SiO ₂）、氮化矽（SiN）或氧化鋅（ZnO），但本發明不以此為限。 Referring to FIG. 1B , a plurality of microstructures 130 are then formed on the buffer layer 120. The plurality of microstructures 130 are disposed on the buffer layer 120. The material of the microstructures 130 is different from the material of the buffer layer 120. The microstructures 130 are used to reduce the defect density when the epitaxial layer 140 (shown in FIG. 1C ) is grown. In the present embodiment, the plurality of microstructures 130 are separated from each other, but the present invention is not limited thereto. For example, in the present embodiment, the material of the microstructures 130 may include aluminum oxide (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (SiN) or zinc oxide (ZnO), but the present invention is not limited thereto.

請參照圖1C，接著，在緩衝層120及多個微結構130上形成磊晶層140、第一型半導體層150、主動層160及第二型半導體層170。第一型半導體層150設置於緩衝層120上。主動層160設置於第一型半導體層150上。第二型半導體層170設置於主動層160上。在本實施例中，可有磊晶層140設置於第一型半導體層150與緩衝層120之間。磊晶層140具有背向主動層160的表面142。表面142具有多個微凹陷142a。多個微結構130設置於磊晶層140的多個微凹陷142a中。在本實施例中，磊晶層140的材質與微結構130的材質可不同。Referring to FIG. 1C , an epitaxial layer 140, a first type semiconductor layer 150, an active layer 160, and a second type semiconductor layer 170 are then formed on the buffer layer 120 and the plurality of microstructures 130. The first type semiconductor layer 150 is disposed on the buffer layer 120. The active layer 160 is disposed on the first type semiconductor layer 150. The second type semiconductor layer 170 is disposed on the active layer 160. In this embodiment, the epitaxial layer 140 may be disposed between the first type semiconductor layer 150 and the buffer layer 120. The epitaxial layer 140 has a surface 142 facing away from the active layer 160. The surface 142 has a plurality of micro-recesses 142a. The plurality of microstructures 130 are disposed in the plurality of micro recesses 142a of the epitaxial layer 140. In this embodiment, the material of the epitaxial layer 140 and the material of the microstructures 130 may be different.

舉例而言，在本實施例中，磊晶層140的材質可包括未摻雜的氮化鎵（GaN）、第一型半導體層150的材質可包括n型的氮化鎵（GaN），主動層160可為多重量子井，多重量子井的材質可包括氮化鎵（GaN）及氮化銦鎵（InGaN），第二型半導體層170的材質可包括p型的氮化鎵（GaN），但本發明不以此為限。For example, in this embodiment, the material of the epitaxial layer 140 may include undoped gallium nitride (GaN), the material of the first type semiconductor layer 150 may include n-type gallium nitride (GaN), the active layer 160 may be a multiple quantum well, the material of the multiple quantum well may include gallium nitride (GaN) and indium gallium nitride (InGaN), and the material of the second type semiconductor layer 170 may include p-type gallium nitride (GaN), but the present invention is not limited thereto.

請參照圖1D，接著，形成第一電極180及第二電極190，其中第一電極180電性連接至第一型半導體層150，而第二電極190電性連接至第二型半導體層170。舉例而言，在本實施例中，第一電極180及第二電極190可選擇性地設置於主動層160的同一側，但本發明不以此為限。1D , a first electrode 180 and a second electrode 190 are then formed, wherein the first electrode 180 is electrically connected to the first type semiconductor layer 150, and the second electrode 190 is electrically connected to the second type semiconductor layer 170. For example, in this embodiment, the first electrode 180 and the second electrode 190 can be selectively disposed on the same side of the active layer 160, but the present invention is not limited thereto.

請參照圖1E，接著，自緩衝層120上移除生長基板110，以形成發光元件LED。在本實施例中，發光元件LED包括緩衝層120、多個微結構130、磊晶層140、第一型半導體層150、主動層160、第二型半導體層170、第一電極180及第二電極190。舉例而言，在本實施例中，可使用雷射剝離（Laser lift off）工序分離生長基板110與緩衝層120，但本發明不以此為限。在本實施例中，所述雷射剝離工序中所使用之雷射L的波長可介於100nm~600nm，所述雷射剝離工序中所使用之雷射L的強度可介0.1J/cm ²~1J/cm ²，但本發明不以此為限。 1E , the growth substrate 110 is then removed from the buffer layer 120 to form a light-emitting element LED. In this embodiment, the light-emitting element LED includes a buffer layer 120, a plurality of microstructures 130, an epitaxial layer 140, a first type semiconductor layer 150, an active layer 160, a second type semiconductor layer 170, a first electrode 180, and a second electrode 190. For example, in this embodiment, a laser lift-off process may be used to separate the growth substrate 110 and the buffer layer 120, but the present invention is not limited thereto. In this embodiment, the wavelength of the laser L used in the laser stripping process may be between 100 nm and 600 nm, and the intensity of the laser L used in the laser stripping process may be between 0.1 J/cm ² and 1 J/cm ² , but the present invention is not limited thereto.

舉例而言，在一實施例中，緩衝層120的材質為氮化鎵（GaN），所述雷射剝離工序中所使用之雷射L的中心波長可為248nm；在另一實施例中，緩衝層120的材質為氮化鋁（AlN），所述雷射剝離工序中所使用之雷射L的中心波長可為193nm；在又一實施例中，緩衝層120的材質為氮化銦鎵（GaInN），所述雷射剝離工序中所使用之雷射L的中心波長可為532nm；於再一實施例中，緩衝層120的材質為氧化鋅（ZnO），所述雷射剝離工序中所使用之雷射L的中心波長可為248nm；但本發明不以此為限。For example, in one embodiment, the material of the buffer layer 120 is gallium nitride (GaN), and the central wavelength of the laser L used in the laser stripping process may be 248nm; in another embodiment, the material of the buffer layer 120 is aluminum nitride (AlN), and the central wavelength of the laser L used in the laser stripping process may be 193nm; in another embodiment In an embodiment, the material of the buffer layer 120 is indium gallium nitride (GaInN), and the center wavelength of the laser L used in the laser stripping process can be 532nm; in another embodiment, the material of the buffer layer 120 is zinc oxide (ZnO), and the center wavelength of the laser L used in the laser stripping process can be 248nm; but the present invention is not limited thereto.

請參照圖1F，接著，將發光元件LED轉置於驅動背板200上，且令發光元件LED與驅動背板200電性連接。舉例而言，在本實施例中，驅動背板200包括畫素驅動電路（未繪示）及與畫素驅動電路電性連接的多個接墊（未繪示），而發光元件LED的第一電極180及第二電極190可分別與所述多個接墊電性連接。在本實施例中，所述畫素驅動電路可包括資料線（未繪示）、掃描線（未繪示）、電源線（未繪示）、共通線（未繪示）、第一電晶體（未繪示）、第二電晶體（未繪示）及電容（未繪示），其中第一電晶體的第一端電性連接至資料線，第一電晶體的控制端電性連接至掃描線，第一電晶體的第二端電性連接至第二電晶體的控制端，第二電晶體的第一端電性連接至電源線，電容電性連接於第一電晶體的第二端及第二電晶體的第一端，第二電晶體的第二端電性連接至一接墊，且共通線電性連接至另一接墊，但本發明不以此為限。1F, the light-emitting element LED is then transferred to the driving backplane 200, and the light-emitting element LED is electrically connected to the driving backplane 200. For example, in this embodiment, the driving backplane 200 includes a pixel driving circuit (not shown) and a plurality of pads (not shown) electrically connected to the pixel driving circuit, and the first electrode 180 and the second electrode 190 of the light-emitting element LED can be electrically connected to the plurality of pads, respectively. In the present embodiment, the pixel driving circuit may include a data line (not shown), a scan line (not shown), a power line (not shown), a common line (not shown), a first transistor (not shown), a second transistor (not shown) and a capacitor (not shown), wherein a first end of the first transistor is electrically connected to the data line, a control end of the first transistor is electrically connected to the scan line, a second end of the first transistor is electrically connected to a control end of the second transistor, a first end of the second transistor is electrically connected to the power line, the capacitor is electrically connected to a second end of the first transistor and a first end of the second transistor, a second end of the second transistor is electrically connected to a pad, and the common line is electrically connected to another pad, but the present invention is not limited thereto.

請參照圖1F，接著，於發光元件LED上形成封裝層210。封裝層210設置於發光元件LED上。介質層220設置於封裝層210與發光元件LED之間。於此，便完成了本實施例的顯示裝置10。在一實施例中，封裝層210可包括透光基板、彩色濾光層、圓偏光片或其組合，但本發明不以此為限。在一實施例中，介質層220可為有機平坦層或空氣，但本發明不以此為限。在本實施例中，發光元件LED例如是微型發光二極體（μLED），而顯示裝置10例如是微型發光二極體顯示面板，但本發明不以此為限。Please refer to Figure 1F, then, a packaging layer 210 is formed on the light-emitting element LED. The packaging layer 210 is disposed on the light-emitting element LED. The dielectric layer 220 is disposed between the packaging layer 210 and the light-emitting element LED. At this point, the display device 10 of the present embodiment is completed. In one embodiment, the packaging layer 210 may include a light-transmitting substrate, a color filter layer, a circular polarizer or a combination thereof, but the present invention is not limited thereto. In one embodiment, the dielectric layer 220 may be an organic flat layer or air, but the present invention is not limited thereto. In this embodiment, the light-emitting element LED is, for example, a micro light-emitting diode (μLED), and the display device 10 is, for example, a micro light-emitting diode display panel, but the present invention is not limited thereto.

在本實施例中，緩衝層120具有第一表面122及第二表面124，緩衝層120的第一表面122接觸於多個微結構130，緩衝層120的第二表面124設置於緩衝層120之第一表面122的對向，且緩衝層120的第二表面124實質上為平面。緩衝層120的第二表面124為發光元件LED的出光面。在一實施例中，若封裝層210包括圓偏光片，發光元件LED之朝外的表面（即，緩衝層120的第二表面124）為平坦的表面，可改善因表面不平整而造成的解偏現象及強光照射下的彩虹紋現象。In this embodiment, the buffer layer 120 has a first surface 122 and a second surface 124. The first surface 122 of the buffer layer 120 contacts the plurality of microstructures 130. The second surface 124 of the buffer layer 120 is disposed opposite to the first surface 122 of the buffer layer 120, and the second surface 124 of the buffer layer 120 is substantially a plane. The second surface 124 of the buffer layer 120 is a light emitting surface of the light emitting element LED. In one embodiment, if the encapsulation layer 210 includes a circular polarizer, the outward surface of the light emitting element LED (i.e., the second surface 124 of the buffer layer 120) is a flat surface, which can improve the depolarization phenomenon caused by the uneven surface and the rainbow pattern phenomenon under strong light irradiation.

在本實施例中，發光元件LED用以發出一光束（未繪示），光束具有中心波長λ，緩衝層120具有厚度T及折射率n，且T=λ/4n。藉此，可形成建設性干涉，增加發光元件LED的出光並降低環境光的反射。舉例而言，在一實施例中，發光元件LED發出之光束的中心波長λ約460nm，緩衝層120的厚度T約60nm，此時，緩衝層120的穿透率可提高至89.70%，緩衝層120的反射率可降低至10.3%，但本發明不以此為限。In this embodiment, the light emitting element LED is used to emit a light beam (not shown), the light beam has a central wavelength λ, and the buffer layer 120 has a thickness T and a refractive index n, and T=λ/4n. In this way, constructive interference can be formed to increase the light output of the light emitting element LED and reduce the reflection of ambient light. For example, in one embodiment, the central wavelength λ of the light beam emitted by the light emitting element LED is about 460nm, and the thickness T of the buffer layer 120 is about 60nm. At this time, the transmittance of the buffer layer 120 can be increased to 89.70%, and the reflectivity of the buffer layer 120 can be reduced to 10.3%, but the present invention is not limited thereto.

在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重述。It should be noted that the following embodiments use the same component numbers and some contents of the previous embodiments, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the previous embodiments, and the following embodiments will not be repeated.

圖2A至圖2F為本發明另一實施例之顯示裝置的製造流程的剖面示意圖。2A to 2F are cross-sectional schematic diagrams of a manufacturing process of a display device according to another embodiment of the present invention.

圖2F的顯示裝置10A及其製造流程與圖1F的顯示裝置10及其製造流程類似，兩者的差異在於：兩者之第一電極180及第二電極190形成的時間點及位置不同。The display device 10A and its manufacturing process in FIG. 2F are similar to the display device 10 and its manufacturing process in FIG. 1F . The difference between the two is that the first electrode 180 and the second electrode 190 are formed at different times and positions.

請參照圖2C，詳細而言，在本實施例中，可於緩衝層120及多個微結構130上依序形成第一型半導體層150、主動層160及第二型半導體層170。在本實施例中，第一型半導體層150具有背向主動層160的表面152，表面152可具有多個微凹陷152a，而多個微結構130可設置於第一型半導體層150的多個微凹陷152a中。2C , in detail, in this embodiment, a first type semiconductor layer 150, an active layer 160, and a second type semiconductor layer 170 may be sequentially formed on the buffer layer 120 and the plurality of microstructures 130. In this embodiment, the first type semiconductor layer 150 has a surface 152 facing away from the active layer 160, the surface 152 may have a plurality of micro-recesses 152a, and the plurality of microstructures 130 may be disposed in the plurality of micro-recesses 152a of the first type semiconductor layer 150.

請參照圖2D，接著，在第二型半導體層170上形成第二電極190。請參照圖2E，接著，移除生長基板110，以暴露出緩衝層120。請參照圖2F，接著，蝕刻緩衝層120，以形成緩衝層120的開口126，其中開口126至少暴露出部分的第一型半導體層150。請參照圖2F，接著，在緩衝層120上形成第一電極180，其中第一電極180透過緩衝層120的開口126電性連接至第一型半導體層150。Referring to FIG. 2D , a second electrode 190 is then formed on the second type semiconductor layer 170. Referring to FIG. 2E , the growth substrate 110 is then removed to expose the buffer layer 120. Referring to FIG. 2F , the buffer layer 120 is then etched to form an opening 126 of the buffer layer 120, wherein the opening 126 at least exposes a portion of the first type semiconductor layer 150. Referring to FIG. 2F , a first electrode 180 is then formed on the buffer layer 120, wherein the first electrode 180 is electrically connected to the first type semiconductor layer 150 through the opening 126 of the buffer layer 120.

在本實施例中，發光元件LED-A包括緩衝層120、多個微結構130、第一型半導體層150、主動層160、第二型半導體層170、第一電極180及第二電極190，且第一電極180及第二電極190分別設置於主動層160的相對兩側。In this embodiment, the light-emitting element LED-A includes a buffer layer 120, a plurality of microstructures 130, a first type semiconductor layer 150, an active layer 160, a second type semiconductor layer 170, a first electrode 180 and a second electrode 190, and the first electrode 180 and the second electrode 190 are respectively disposed on opposite sides of the active layer 160.

10、10A:顯示裝置 110:生長基板 120:緩衝層 122:第一表面 124:第二表面 126:開口 130:微結構 140:磊晶層 142、152:表面 142a、152a:微凹陷 150:第一型半導體層 160:主動層 170:第二型半導體層 180:第一電極 190:第二電極 200:驅動背板 210:封裝層 220:介質層 L:雷射 LED、LED-A:發光元件 T:厚度 10, 10A: Display device 110: Growth substrate 120: Buffer layer 122: First surface 124: Second surface 126: Opening 130: Microstructure 140: Epitaxial layer 142, 152: Surface 142a, 152a: Micro-depression 150: First type semiconductor layer 160: Active layer 170: Second type semiconductor layer 180: First electrode 190: Second electrode 200: Driving backplane 210: Encapsulation layer 220: Dielectric layer L: Laser LED, LED-A: Light-emitting element T: Thickness

圖1A至圖1F為本發明一實施例之顯示裝置的製造流程的剖面示意圖。圖2A至圖2F為本發明另一實施例之顯示裝置的製造流程的剖面示意圖。 Figures 1A to 1F are schematic cross-sectional views of a manufacturing process of a display device according to one embodiment of the present invention. Figures 2A to 2F are schematic cross-sectional views of a manufacturing process of a display device according to another embodiment of the present invention.

10:顯示裝置 10: Display device

120:緩衝層 120: Buffer layer

122:第一表面 122: First surface

124:第二表面 124: Second surface

130:微結構 130: Microstructure

140:磊晶層 140: Epitaxial layer

142:表面 142: Surface

142a:微凹陷 142a: Slightly concave

150:第一型半導體層 150: Type I semiconductor layer

160:主動層 160: Active layer

170:第二型半導體層 170: Type II semiconductor layer

180:第一電極 180: First electrode

190:第二電極 190: Second electrode

200:驅動背板 200: Drive backplane

210:封裝層 210: Packaging layer

220:介質層 220: Dielectric layer

LED:發光元件 LED: light-emitting element

T:厚度 T:Thickness

Claims

一種發光元件，包括：一緩衝層；多個微結構，設置於該緩衝層上；一第一型半導體層，設置於該緩衝層上；一主動層，設置於該第一型半導體層上；一第二型半導體層，設置於該主動層上；一第一電極，電性連接至該第一型半導體層；以及一第二電極，電性連接至該第二型半導體層，其中該緩衝層的材質與該些微結構的材質不同，該發光元件用以發出一光束，該光束具有一中心波長(λ)，該緩衝層具有一厚度(T)及一折射率(n)，且T=λ/4n。 A light-emitting element includes: a buffer layer; a plurality of microstructures disposed on the buffer layer; a first type semiconductor layer disposed on the buffer layer; an active layer disposed on the first type semiconductor layer; a second type semiconductor layer disposed on the active layer; a first electrode electrically connected to the first type semiconductor layer; and a second electrode electrically connected to the second type semiconductor layer, wherein the material of the buffer layer is different from that of the microstructures, and the light-emitting element is used to emit a light beam having a central wavelength (λ), and the buffer layer has a thickness (T) and a refractive index (n), and T=λ/4n.

如請求項1所述的發光元件，更包括：一磊晶層，設置於該第一型半導體層與該緩衝層之間，其中該磊晶層之背向該主動層的一表面具有多個微凹陷，且該些微結構設置於該磊晶層的該些微凹陷中。 The light-emitting element as described in claim 1 further comprises: an epitaxial layer disposed between the first type semiconductor layer and the buffer layer, wherein a surface of the epitaxial layer facing away from the active layer has a plurality of micro-recesses, and the microstructures are disposed in the micro-recesses of the epitaxial layer.

如請求項2所述的發光元件，其中該磊晶層的材質與該些微結構的材質不同。 A light-emitting element as described in claim 2, wherein the material of the epitaxial layer is different from the material of the microstructure.

如請求項1所述的發光元件，其中該第一型半導體層之背向該主動層的一表面具有多個微凹陷，且該些微結構設置於該第一型半導體層的該些微凹陷中。 The light-emitting element as described in claim 1, wherein a surface of the first type semiconductor layer facing away from the active layer has a plurality of micro-recesses, and the microstructures are disposed in the micro-recesses of the first type semiconductor layer.

如請求項1所述的發光元件，其中該緩衝層具有一第一表面及一第二表面，該緩衝層的該第一表面接觸於該些微結構，該緩衝層的該第二表面設置於該緩衝層之該第一表面的對向，且該緩衝層的該第二表面實質上為一平面。 The light-emitting element as described in claim 1, wherein the buffer layer has a first surface and a second surface, the first surface of the buffer layer contacts the microstructures, the second surface of the buffer layer is disposed opposite to the first surface of the buffer layer, and the second surface of the buffer layer is substantially a plane.

一種顯示裝置，包括：至少一發光元件，其中每一發光元件包括：一緩衝層；多個微結構，設置於該緩衝層上；一第一型半導體層，設置於該緩衝層上；一主動層，設置於該第一型半導體層上；一第二型半導體層，設置於該主動層上；一第一電極，電性連接至該第一型半導體層；以及一第二電極，電性連接至該第二型半導體層，其中每一該發光元件用以發出一光束，該光束具有一中心波長(λ)，該緩衝層具有一厚度(T)及一折射率(n)，且T=λ/4n；以及一驅動背板，其中該至少一發光元件電性連接至該驅動背板，且該緩衝層具有一出光面。 A display device includes: at least one light-emitting element, wherein each light-emitting element includes: a buffer layer; a plurality of microstructures disposed on the buffer layer; a first type semiconductor layer disposed on the buffer layer; an active layer disposed on the first type semiconductor layer; a second type semiconductor layer disposed on the active layer; a first electrode electrically connected to the first type semiconductor layer; and a second electrode electrically connected to the second type semiconductor layer, wherein each of the light emitting elements is used to emit a light beam having a central wavelength (λ), the buffer layer having a thickness (T) and a refractive index (n), and T=λ/4n; and a driving backplane, wherein the at least one light emitting element is electrically connected to the driving backplane, and the buffer layer has a light emitting surface.

如請求項6所述的顯示裝置，其中該緩衝層的材質與該些微結構的材質不同。 A display device as described in claim 6, wherein the material of the buffer layer is different from the material of the microstructures.

如請求項6所述的顯示裝置，其中每一該發光元件更包括：一磊晶層，設置於該第一型半導體層與該緩衝層之間，其中該磊晶層之背向該主動層的一表面具有多個微凹陷，且該些微結構設置於該磊晶層的該些微凹陷中。 The display device as described in claim 6, wherein each of the light-emitting elements further comprises: An epitaxial layer disposed between the first type semiconductor layer and the buffer layer, wherein a surface of the epitaxial layer facing away from the active layer has a plurality of micro-recesses, and the microstructures are disposed in the micro-recesses of the epitaxial layer.

如請求項8所述的顯示裝置，其中該磊晶層的材質與該些微結構的材質不同。 A display device as described in claim 8, wherein the material of the epitaxial layer is different from the material of the microstructures.

如請求項6所述的顯示裝置，其中該第一型半導體層之背向該主動層的一表面具有多個微凹陷，且該些微結構設置於該第一型半導體層的該些微凹陷中。 A display device as described in claim 6, wherein a surface of the first type semiconductor layer facing away from the active layer has a plurality of micro-recesses, and the microstructures are disposed in the micro-recesses of the first type semiconductor layer.

如請求項6所述的顯示裝置，其中該緩衝層具有一第一表面及一第二表面，該緩衝層的該第一表面接觸於該些微結構，該緩衝層的該第二表面設置於該緩衝層之該第一表面的對向，且該緩衝層的該第二表面實質上為一平面。 A display device as described in claim 6, wherein the buffer layer has a first surface and a second surface, the first surface of the buffer layer contacts the microstructures, the second surface of the buffer layer is disposed opposite to the first surface of the buffer layer, and the second surface of the buffer layer is substantially a plane.