TWI842387B - Method for manufacturing sub-millimeter light-emitting diode backlight panel and its product - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 19
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- 238000007789 sealing Methods 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000007731 hot pressing Methods 0.000 abstract description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 15
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- 230000005496 eutectics Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
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- 238000000427 thin-film deposition Methods 0.000 description 1
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Abstract
本發明提供一種次毫米發光二極體背光板的製法,包含以下步驟:(a)於一柔性基板的一第一面上的一第一線路層固晶複數次毫米發光二極體晶粒;(b)於該步驟(a)後的次毫米發光二極體晶粒上熱壓一附著有一透光性封膠層的透光剛性基板,令該透光性封膠層包覆各次毫米發光二極體晶粒;及(c)於該步驟(b)後的柔性基板之一相反於該第一面之第二面上的一第二線路層鍵合複數驅動晶片;該第一線路層與第二線路層彼此電性連接,從而使該等驅動晶片電性連接該第一線路層上的該等次毫米發光二極體晶粒。本發明亦提供一種前述製法所製得的次毫米發光二極體背光板。The present invention provides a method for manufacturing a sub-millimeter light-emitting diode backlight panel, comprising the following steps: (a) bonding a plurality of sub-millimeter light-emitting diode dies to a first circuit layer on a first surface of a flexible substrate; (b) hot-pressing a transparent rigid substrate with a transparent sealing layer attached thereto on the sub-millimeter light-emitting diode dies after step (a), so that the transparent sealing layer covers each sub-millimeter light-emitting diode dies; and (c) bonding a plurality of driver chips to a second circuit layer on a second surface of the flexible substrate opposite to the first surface after step (b); the first circuit layer and the second circuit layer are electrically connected to each other, so that the driver chips are electrically connected to the sub-millimeter light-emitting diode dies on the first circuit layer. The present invention also provides a sub-millimeter light-emitting diode backlight plate manufactured by the above-mentioned manufacturing method.
Description
本發明是有關於一種背光板,特別是指一種次毫米發光二極體(mini-LED)背光板的製法及其製品。 The present invention relates to a backlight panel, in particular to a method for manufacturing a sub-millimeter light-emitting diode (mini-LED) backlight panel and its product.
發光二極體(LED)基於其具備有亮度高、壽命長、反應速度快等優勢,因而將LED應用於液晶顯示裝置的背光模組(backlight module)已成為近十年來業界的主流。此外,隨著光電半導體製程的進步與液晶顯示裝置輕薄短小化的需求,做為液晶顯示裝置之背光源的次毫米發光二極體也成為了液晶顯示裝置相關產業界的發展趨勢。 Due to its advantages of high brightness, long life, and fast response speed, the application of LED in the backlight module of liquid crystal display devices has become the mainstream in the industry in the past decade. In addition, with the advancement of optoelectronic semiconductor manufacturing processes and the demand for thinner and smaller liquid crystal display devices, sub-millimeter light-emitting diodes as backlight sources for liquid crystal display devices have also become a development trend in the industry related to liquid crystal display devices.
參閱圖1,一種現有的次毫米發光二極體背光板1,包括一雙面柔性印刷電路板(FPC)11、複數次毫米發光二極體晶粒12,及複數用以驅動該等次毫米發光二極體晶粒12的驅動晶片13。該雙面柔性印刷電路板11具有一柔性基板110、一設置於該柔性基板110之一上表面1101的上線路層111,及一設置於該柔性基板110之一下表面1102並與該上線路層111彼此電連接的下線路層112。
該等次毫米發光二極體晶粒12是經由錫膏與焊墊(bonding pad)做金屬共晶(eutectic)而固晶於該上線路層111;該等驅動晶片13同樣是經由錫膏與焊墊形成金屬共晶以鍵合該下線路層112。
Referring to FIG. 1 , a conventional sub-millimeter light-emitting
此處須說明的是,該現有的次毫米發光二極體背光板1於實際整合至液晶顯示模組以構成液晶顯示裝置前,仍需經過一封膠層(molding layer,圖未示)來對該等次毫米發光二極體晶粒12進行封裝,並於包覆該等次毫米發光二極體晶粒12的封膠層上方設置一波長轉換層(圖未示),以供應該等次毫米發光二極體晶粒12進行混光從而產生白光的背光源後,才能整合至液晶顯示模組。
It should be noted here that before the existing sub-millimeter
眾所周知的是,為使液晶顯示裝置能夠滿足業界對輕薄短小化的需求,該現有的次毫米發光二極體背光板1於製作過程中,該雙面柔性印刷電路板11業界一般是採用厚度薄的FPC。詳細來說,該現有的次毫米發光二極體背光板1的製法是先在該下線路層112上鍵合該等驅動晶片13後,將該雙面柔性印刷電路板11翻轉180度以使其放置於一配置有複數能各自對應地容納各驅動晶片13的定位凹槽的載板(圖未示)上,使其上線路層111朝上,再於該上線路層111上固晶該等次毫米發光二極體晶粒12。然而,也基於該雙面柔性印刷電路板11的厚度薄以致於在其放置於該載板後容易受重力影響而產生翹曲/變形,致使固晶過程中無法精確地使該等次毫米發光二極體晶粒12接著於該上線路層111。因此,容易因
打件偏位而產生斷路或發光亮度不均(mura)等問題。
As is known to all, in order to make the liquid crystal display device meet the industry's demand for lightness, thinness and miniaturization, the conventional sub-millimeter light-emitting
經上述說明可知,改良次毫米發光二極體背光板1結構與製法以解決打件偏位所致的斷路或發光亮度不均(mura)等問題,是本案所屬技術領域中的相關技術人員有待突破的課題。
From the above description, it can be seen that improving the structure and manufacturing method of the sub-millimeter
因此,本發明的第一目的,即在提供一種能解決打件偏位所致的斷路或發光亮度不均等問題的次毫米發光二極體背光板的製法。 Therefore, the first purpose of the present invention is to provide a method for manufacturing a sub-millimeter LED backlight panel that can solve the problems of circuit breakage or uneven brightness caused by component misalignment.
於是,本發明之次毫米發光二極體背光板的製法,包括以下步驟:一步驟(a)、一步驟(b),及一步驟(c)。 Therefore, the method for manufacturing the sub-millimeter light-emitting diode backlight panel of the present invention includes the following steps: step (a), step (b), and step (c).
該步驟(a)是於一柔性基板的一第一面上的一第一線路層固晶複數次毫米發光二極體晶粒。 The step (a) is to solidify a plurality of sub-millimeter light-emitting diode dies on a first circuit layer on a first surface of a flexible substrate.
該步驟(b)是於該步驟(a)後的次毫米發光二極體晶粒上熱壓一附著有一透光性封膠層的透光剛性基板,令該透光性封膠層包覆各次毫米發光二極體晶粒。 The step (b) is to heat-press a transparent rigid substrate with a transparent sealing layer attached on the sub-millimeter light-emitting diode die after the step (a), so that the transparent sealing layer covers each sub-millimeter light-emitting diode die.
該步驟(c)是於該步驟(b)後的柔性基板之一相反於該第一面之一第二面上的第二線路層鍵合複數驅動晶片;其中,該第一線路層與第二線路層彼此電性連接,從而使該等驅動晶片電性連接該第一線路層上的該等次毫米發光二極體晶粒。 The step (c) is to bond a plurality of driver chips to a second circuit layer on a second surface of the flexible substrate opposite to the first surface after the step (b); wherein the first circuit layer and the second circuit layer are electrically connected to each other, so that the driver chips are electrically connected to the sub-millimeter light-emitting diode dies on the first circuit layer.
本發明的第二目的,即在提供一種如前述製法所製得的 次毫米發光二極體背光板。 The second purpose of the present invention is to provide a sub-millimeter light-emitting diode backlight panel manufactured by the aforementioned manufacturing method.
本發明之次毫米發光二極體背光板,包括一雙面柔性電路板、複數次毫米發光二極體晶粒、複數驅動晶片,及一透光剛性基板。該雙面柔性電路板包括一柔性基板、一形成於該柔性基板的一第一面上的第一線路層,及一形成於相反於該第一面的一第二面上的第二線路層,該第一線路層與第二線路層彼此電性連接。該等次毫米發光二極體晶粒固晶於該第一線路層。該等驅動晶片鍵合於該第二線路層。該透光剛性基板包括一板本體,及一附著於該板本體上的透光性封膠層,且該透光性封膠層包覆該等次毫米發光二極體晶粒。 The sub-millimeter light-emitting diode backlight panel of the present invention includes a double-sided flexible circuit board, a plurality of sub-millimeter light-emitting diode dies, a plurality of driving chips, and a transparent rigid substrate. The double-sided flexible circuit board includes a flexible substrate, a first circuit layer formed on a first surface of the flexible substrate, and a second circuit layer formed on a second surface opposite to the first surface, and the first circuit layer and the second circuit layer are electrically connected to each other. The sub-millimeter light-emitting diode dies are die-bonded on the first circuit layer. The driving chips are bonded to the second circuit layer. The transparent rigid substrate includes a board body, and a transparent sealing layer attached to the board body, and the transparent sealing layer covers the sub-millimeter light-emitting diode dies.
本發明的功效在於:該步驟(b)所使用的透光剛性基板本身能夠支撐易受重力影響而產生翹曲的柔性基板,以避免該柔性基板產生翹曲導致在實施該步驟(c)時無法精確地使該等驅動晶片鍵合於該第二線路層,從而解決打件偏位所致的斷路或發光亮度不均等問題。 The effect of the present invention is that the light-transmissive rigid substrate used in step (b) can support the flexible substrate that is susceptible to warping due to gravity, so as to prevent the flexible substrate from warping, which results in the inability to accurately bond the driver chips to the second circuit layer when implementing step (c), thereby solving the problem of circuit breakage or uneven brightness caused by component deviation.
2:雙面柔性電路板 2: Double-sided flexible circuit board
20:柔性基板 20: Flexible substrate
201:第一面 201: First page
202:第二面 202: Second side
21:第一線路層 21: First circuit layer
22:第二線路層 22: Second circuit layer
3:透光剛性基板 3: Transparent rigid substrate
31:板本體 31: Plate body
32:透光性封膠層 32: Translucent sealing layer
33:波長轉換粒子 33: Wavelength conversion particles
4:次毫米發光二極體晶粒 4: Sub-millimeter LED grains
5:驅動晶片 5:Drive chip
6:圖案化反射層 6: Patterned reflective layer
90:外框 90: Outer frame
91:光學膜 91: Optical film
92:偏振片 92: Polarizer
93:下TFT元件陣列載板 93: Lower TFT component array carrier board
94:上彩色濾光片載板 94: Color filter carrier
95:解像偏振片 95: Resolution polarizing film
96:LCD信號控制線路 96: LCD signal control circuit
97:背光信號控制線路 97: Backlight signal control circuit
98:線路集成板 98: Circuit integrated board
BLP:次毫米發光二極體背光板 BLP: Sub-millimeter light-emitting diode backlight panel
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一示意圖,說明一種現有的次毫米發光二極體背光板; 圖2是一示意圖,說明本發明之次毫米發光二極體背光板的製法的一實施例的一步驟(a’);圖3是一示意圖,說明本發明該實施例之製法的一步驟(a);圖4是一示意圖,說明本發明該實施例之製法的一步驟(b);圖5是一示意圖,說明本發明該實施例之製法的一步驟(c)及其所製得的一次毫米發光二極體背光板;及圖6是一示意圖,說明組裝有本發明該實施例之次毫米發光二極體背光板所構成的一液晶顯示裝置。 Other features and effects of the present invention will be clearly presented in the implementation method with reference to the drawings, wherein: FIG. 1 is a schematic diagram illustrating an existing sub-millimeter light-emitting diode backlight plate; FIG. 2 is a schematic diagram illustrating a step (a') of an implementation method of the sub-millimeter light-emitting diode backlight plate of the present invention; FIG. 3 is a schematic diagram illustrating a step (a) of the implementation method of the present invention; FIG. 4 is a schematic diagram illustrating a step (b) of the implementation method of the present invention; FIG. 5 is a schematic diagram illustrating a step (c) of the implementation method of the present invention and a sub-millimeter light-emitting diode backlight plate produced thereby; and FIG. 6 is a schematic diagram illustrating a liquid crystal display device assembled with the sub-millimeter light-emitting diode backlight plate of the implementation method of the present invention.
本發明之次毫米發光二極體背光板BLP的製法的一實施例,包括以下步驟:一步驟(a)、一步驟(b),及一步驟(c)。 An embodiment of the method for manufacturing the sub-millimeter light-emitting diode backlight panel BLP of the present invention includes the following steps: step (a), step (b), and step (c).
參閱圖3,該步驟(a)是於一柔性基板20的一第一面201上的一第一線路層21固晶複數次毫米發光二極體晶粒4。
Referring to FIG. 3 , step (a) is to solidify multiple sub-millimeter light-emitting diode dies 4 on a
參閱圖4,該步驟(b)是於該步驟(a)後的次毫米發光二極體晶粒4上熱壓一附著有一透光性封膠層32的透光剛性基板3,令該透光性封膠層32於熱壓後能包覆各次毫米發光二極體晶粒4(請見圖5)。較佳地,該透光剛性基板3包括透光的一板本體31、附著於該板本體31上的該透光性封膠層32,及複數分散封裝於該板本體31內部的波長轉換粒子33;該透光性封膠層32內分散有複數微
粒(圖未示)。適合分散於該透光性封膠層32內的微粒可以是氧化鈦(TiO2)微粒,適用於本發明該實施例之波長轉換粒子33可以是螢光粉或量子點(quantum dots,以下簡稱QDs)。在本發明該實施例中,該板本體31、分散於該透光性封膠層32內的微粒與該等波長轉換粒子33,分別是以玻璃基板、TiO2微粒與QDs為例做說明,但其不限於此。例如,該透光剛性基板3也可以是由下而上為玻璃/波長轉換粒子層/玻璃的層狀複合結構。
Referring to FIG. 4 , step (b) is to heat press a light-transmitting
參閱圖5,該步驟(c)是使該步驟(b)後的柔性基板20翻轉180°,於該柔性基板20之一相反於該第一面201之一第二面202上的第二線路層22鍵合複數驅動晶片5;其中,該第一線路層21與第二線路層22彼此電性連接,從而使該等驅動晶片5電性連接該第一線路層21上的該等次毫米發光二極體晶粒4。
Referring to FIG. 5 , step (c) is to flip the
在本發明該實施例中,該柔性基板20、第一線路層21與第二線路層22是採用一市售的雙面柔性印刷電路板(FPC)為例做說明,但並不限於此。詳細來說,該雙面柔性電路板2也可以是使用聚醯亞胺(polyimide,以下簡稱PI)來做為該柔性基板20的主要材質,使PI塗佈於一暫時基板(圖未示)上,依序且重複地經過黃光微影步驟、蝕刻步驟、薄膜沉積步驟、剝離步驟以製得該雙面柔性電路板2。前述以PI來製作該雙面柔性電路板2的製法並非本發明之技術重點,於此不再多加贅述。
In the embodiment of the present invention, the
較佳地,於該步驟(a)前還包含一步驟(a’)。如圖2所示,該步驟(a’)是於該柔性基板20的第一面201的上方形成一圖案化反射層6,且如圖3所示,該等次毫米發光二極體晶粒4是裸露於該圖案化反射層6外;在實施該步驟(b)後,該圖案化反射層6是由該透光性封膠層32所包覆(如圖5所示)。在本發明該實施例之步驟(a’)中,是以在該柔性基板20的第一面201的上方網印一圖案化的白漆(該圖案化反射層6)為例做說明,但其不限於此。
Preferably, a step (a') is further included before the step (a). As shown in FIG. 2 , the step (a') is to form a patterned
經本發明該實施例之製法的詳細說明可知,本發明該實施例之製法所製得的次毫米發光二極體背光板BLP是如圖5所示,其包括該雙面柔性電路板2、該等次毫米發光二極體晶粒4、該等驅動晶片5、該透光剛性基板3,及該圖案化反射層6。
According to the detailed description of the manufacturing method of the embodiment of the present invention, the sub-millimeter light-emitting diode backlight panel BLP manufactured by the manufacturing method of the embodiment of the present invention is as shown in FIG5, which includes the double-sided
該雙面柔性電路板2包括該柔性基板20、形成於該柔性基板20第一面201上的第一線路層21,及形成相反於該第一面201的第二面202上的該第二線路層22,且該第一線路層21與第二線路層22彼此電性連接。
The double-sided
該等次毫米發光二極體晶粒4固晶於該第一線路層21,且該等驅動晶片5鍵合於該第二線路層22。
The sub-millimeter light-emitting diode dies 4 are solid-bonded to the
該透光剛性基板3包括該板本體(玻璃基板)31、附著於該板本體31上且包覆該等次毫米發光二極體晶粒4的透光性封膠層32,及分散於該板本體31內部的波長轉換粒子(QDs)33。該圖案化
反射層6是形成於該柔性基板20第一面201的上方(由於圖5是說明該柔性基板20被翻轉180°後的態樣,因此圖5所示之圖案化反射層6是形成於該柔性基板20第一面201的下方,於此合先敘明),且該等次毫米發光二極體晶粒4是裸露於該圖案化反射層外6並由該透光性封膠層32所包覆。
The transparent
參閱圖6,當本發明該實施例之次毫米發光二極體背光板BLP被整合至一液晶顯示器模組時,其是被放置於一外框90內後,並於該次毫米發光二極體背光板BLP上依序堆疊一光學膜91、一偏振片(polarizer)92、一下TFT元件陣列載板93、一液晶層(未繪示)、一上彩色濾光片載板94,及一解像偏振片(analyzer)95,使該外框90內的光學膜91、偏振片92、下TFT元件陣列載板93、液晶層(未繪示)、上彩色濾光片載板94及解像偏振片95共同構成該液晶顯示器模組;其中,該液晶顯示器模組與該次毫米發光二極體背光板BLP是各自經由一LCD信號控制線路96與一背光信號控制線路97電性連接至一位在該外框90外部的線路集成板98,從而構成一液晶顯示裝置。
Referring to FIG. 6 , when the sub-millimeter light emitting diode backlight panel BLP of the embodiment of the present invention is integrated into a liquid crystal display module, it is placed in an
根據本發明前面製法的詳細說明可知,本發明在實施該步驟(b)時(請同時參閱圖4與圖5),是於該步驟(a)後的次毫米發光二極體晶粒4上直接熱壓附著有該透光性封膠層32且內部分散有該等波長轉換粒子(QDs)33的板本體(玻璃基板)31,令該透光性封膠
層32於熱壓後能包覆該等次毫米發光二極體晶粒4。因此,本發明該步驟(b)所使用的透光剛性基板3本身能夠支撐易受重力影響而產生翹曲的雙面柔性電路板2,以避免該雙面柔性電路板2產生翹曲導致在實施該步驟(c)時無法精確地使該等驅動晶片5鍵合於該第二線路層22,解決了先前技術中打件偏位所致的斷路或發光亮度不均等問題。此外,該板本體(玻璃基板)31表面附著有該透光性封膠層32,而其內部更分散有該等波長轉換粒子(QDs)33。因此,本發明在實施完該步驟(b)所提到的熱壓後,該透光封膠層32能直接包覆該等次毫米發光二極體晶粒4,既能直接完成該等次毫米發光二極體晶粒4的封裝步驟,也能省略掉先前技術所提到設置波長轉換層的步驟,本發明該實施例之製法相較於該現有的次毫米發光二極體背光板的製法更為簡化。
According to the detailed description of the manufacturing method of the present invention, when the present invention implements step (b) (please refer to FIG. 4 and FIG. 5 at the same time), the plate body (glass substrate) 31 with the light-transmitting
綜上所述,本發明之次毫米發光二極體背光板的製法及其製品,能在製作過程中避免該雙面柔性電路板2產生翹曲問題從而精確地使該等驅動晶片5鍵合於該第二線路層22以解決打件偏位所致的斷路或發光亮度不均等問題,也能相對現有技術的製程更為簡化,故確實能達成本發明的目的。
In summary, the manufacturing method and product of the sub-millimeter LED backlight panel of the present invention can avoid the warping problem of the double-sided
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍 內。 However, the above is only an example of the implementation of the present invention, and it cannot be used to limit the scope of the implementation of the present invention. All simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still within the scope of the patent of the present invention.
2:雙面柔性電路板 2: Double-sided flexible circuit board
20:柔性基板 20: Flexible substrate
201:第一面 201: First page
202:第二面 202: Second side
21:第一線路層 21: First circuit layer
22:第二線路層 22: Second circuit layer
3:透光剛性基板 3: Transparent rigid substrate
31:板本體 31: Plate body
32:透光性封膠層 32: Translucent sealing layer
33:波長轉換粒子 33: Wavelength conversion particles
4:次毫米發光二極體晶粒 4: Sub-millimeter LED grains
5:驅動晶片 5:Drive chip
6:圖案化反射層 6: Patterned reflective layer
BLP:次毫米發光二極體背光板 BLP: Sub-millimeter light-emitting diode backlight panel
Claims (8)
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