TWI839764B - Electronic device and electronic element soldering method and led display manufacturing method - Google Patents
Electronic device and electronic element soldering method and led display manufacturing method Download PDFInfo
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- TWI839764B TWI839764B TW111124330A TW111124330A TWI839764B TW I839764 B TWI839764 B TW I839764B TW 111124330 A TW111124330 A TW 111124330A TW 111124330 A TW111124330 A TW 111124330A TW I839764 B TWI839764 B TW I839764B
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- 238000005476 soldering Methods 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 159
- 229910000679 solder Inorganic materials 0.000 claims description 141
- 239000000758 substrate Substances 0.000 claims description 130
- 238000003466 welding Methods 0.000 claims description 38
- 238000002844 melting Methods 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 18
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 50
- 239000004065 semiconductor Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011796 hollow space material Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Description
本發明有關一種電子裝置、焊接電子元件之方法及製造LED顯示器之方法,且尤其係有關一種通電加熱之電子裝置、焊接電子元件之方法及製造LED顯示器之方法。The present invention relates to an electronic device, a method for welding electronic components and a method for manufacturing an LED display, and more particularly to an electronic device for heating by electricity, a method for welding electronic components and a method for manufacturing an LED display.
一般而言,電子元件例如LED等會包含電極與電路基板之金屬接點對應,並且透過焊接將兩者固定。習知之焊接方式為回流焊接,使用回流爐加熱將電路基板上的焊料融化,而能使電子元件與電路基板連接。然而,回流爐易造成電路基板翹曲形變,故此種焊接方式對電路基板材質要求高,而有其缺點存在。Generally speaking, electronic components such as LEDs contain electrodes that correspond to metal contacts on a circuit board, and the two are fixed together by welding. The commonly known welding method is reflow soldering, which uses a reflow oven to heat and melt the solder on the circuit board, so that the electronic components can be connected to the circuit board. However, the reflow oven can easily cause the circuit board to warp and deform, so this welding method has high requirements on the quality of the circuit board and has its disadvantages.
有業者在電路基板內設置加熱元件及加熱金屬,加熱金屬與加熱元件電性連接且對應金屬接點,透過加熱元件通電予加熱金屬,使其產生熱能以融化焊料。然而,由於須於電路基板內加設加熱元件及加熱金屬,因此要採用多層板,製程較複雜且成本較高。Some companies install heating elements and heating metal in the circuit board. The heating metal is electrically connected to the heating element and corresponds to the metal contact. The heating element is energized to generate heat to melt the solder. However, since the heating element and heating metal must be installed in the circuit board, a multi-layer board must be used, which makes the manufacturing process more complicated and the cost higher.
有鑑於此,如何改善電子元件與電路基板的焊接方式及結構,遂成相關業者欲解決的問題。In view of this, how to improve the welding method and structure of electronic components and circuit substrates has become a problem that relevant industries want to solve.
依據本發明一實施方式提供一種電子裝置,其包含一電子元件、一加熱元件以及一並聯線路,加熱元件係設在電子元件上,並聯線路將電子元件和加熱元件並聯連接。According to an embodiment of the present invention, an electronic device is provided, which includes an electronic element, a heating element and a parallel circuit. The heating element is arranged on the electronic element, and the parallel circuit connects the electronic element and the heating element in parallel.
依據前述實施方式之電子裝置,其中加熱元件之材料係可為氧化銦錫(ITO)、氧化鋅(ZnO)、鎢、氮化鉭或氧化鉭。In the electronic device according to the aforementioned embodiment, the material of the heating element can be indium tin oxide (ITO), zinc oxide (ZnO), tungsten, tantalum nitride or tantalum oxide.
依據前述實施方式之電子裝置,其中電子元件係可為發光二極體(LED)。In the electronic device according to the aforementioned implementation, the electronic element may be a light emitting diode (LED).
依據本發明又一實施方式提供一種焊接電子元件之方法,其包含提供一基板,於其上係具有一欲焊接位置;將一如前述之電子裝置放置於基板之欲焊接位置處;於電子裝置中之電子元件和基板之欲焊接位置處間施加一焊料;於電子裝置中之並聯線路通入一加熱電流,使並聯線路上之加熱元件產生熱量以熔融焊料,而藉熔融之焊料將電子元件焊固於基板之欲焊接位置處;於並聯線路通入較加熱電流為大之一熔斷電流,而使並聯線路於加熱元件處形成斷路;以及停止通入熔斷電流。According to another embodiment of the present invention, a method for soldering electronic components is provided, which includes providing a substrate having a desired soldering position thereon; placing an electronic device as described above at the desired soldering position of the substrate; applying a solder between the electronic component in the electronic device and the desired soldering position of the substrate; passing a heating current through a parallel circuit in the electronic device so that a heating element in the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder; passing a fusing current that is larger than the heating current through the parallel circuit so that the parallel circuit forms an open circuit at the heating element; and stopping the passing of the fusing current.
依據本發明再一實施方式提供一種焊接電子元件之方法,其包含提供一基板,於其上係具有一欲焊接位置,於基板上係更設有一加熱元件,加熱元件係對應於欲焊接位置設置;將一電子元件放置於基板之欲焊接位置處,並使電子元件與加熱元件以並聯的方式連接以形成一並聯線路;於電子元件和基板之欲焊接位置處間施加一焊料;於並聯線路通入一加熱電流,使並聯線路上之加熱元件產生熱量以熔融焊料,而藉熔融之焊料將電子元件焊固於基板之欲焊接位置處;於並聯線路通入較加熱電流為大之一熔斷電流,而使並聯線路於加熱元件處形成斷路;以及停止通入熔斷電流。According to another embodiment of the present invention, a method for soldering electronic components is provided, which includes providing a substrate having a desired soldering position thereon, and further providing a heating element on the substrate, the heating element being arranged corresponding to the desired soldering position; placing an electronic component at the desired soldering position of the substrate, and connecting the electronic component and the heating element in parallel to form a parallel circuit; applying a solder between the electronic component and the desired soldering position of the substrate; passing a heating current through the parallel circuit, so that the heating element on the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder; passing a fusing current larger than the heating current through the parallel circuit, so that the parallel circuit forms an open circuit at the heating element; and stopping the passing of the fusing current.
依據前述實施方式之焊接電子元件之方法,其中加熱電流係可為相對於並聯線路上之電子元件之順向電流。In the method for soldering electronic components according to the aforementioned embodiment, the heating current can be a forward current relative to the electronic components on the parallel circuit.
依據前述實施方式之焊接電子元件之方法,其中加熱電流係可為相對於並聯線路上之電子元件之逆向電流。In the method for soldering electronic components according to the aforementioned embodiment, the heating current can be a reverse current relative to the electronic components on the parallel circuit.
依據前述實施方式之焊接電子元件之方法,其中熔斷電流係可為相對於並聯線路上之電子元件之順向電流。In the method for welding electronic components according to the aforementioned implementation, the melting current can be a forward current relative to the electronic components on the parallel circuit.
依據前述實施方式之焊接電子元件之方法,其中熔斷電流係可為相對於並聯線路上之電子元件之逆向電流。In the method for welding electronic components according to the aforementioned implementation, the fusing current can be a reverse current relative to the electronic components on the parallel circuit.
依據前述實施方式之焊接電子元件之方法,其中基板係可為薄膜電晶體(TFT)基板。According to the method for welding electronic components in the above-mentioned embodiment, the substrate may be a thin film transistor (TFT) substrate.
依據前述實施方式之焊接電子元件之方法,其中電子元件係可為發光二極體(LED)。According to the method for welding electronic components of the aforementioned implementation mode, the electronic components can be light emitting diodes (LEDs).
依據前述實施方式之焊接電子元件之方法,其中焊料係可分別施加於發光二極體之P極和N極上。According to the method of soldering electronic components of the aforementioned embodiment, solder can be applied to the P pole and N pole of the light-emitting diode respectively.
依據本發明更一實施方式提供一種製造LED顯示器之方法,其係包括如前述之焊接電子元件之方法焊接LED。According to another embodiment of the present invention, a method for manufacturing an LED display is provided, which includes welding LEDs using the aforementioned method for welding electronic components.
以下將參照圖式說明本發明之實施例。為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,閱讀者應瞭解到,這些實務上的細節不應用以限制本發明。即,在本發明部分實施例中,這些實務上的細節係非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示;並且重複之元件將可能使用相同的編號或類似的編號表示。The following will describe the embodiments of the present invention with reference to the drawings. For the purpose of clarity, many practical details will be described together in the following description. However, the reader should understand that these practical details should not be used to limit the present invention. That is, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some commonly used structures and components will be shown in the drawings in a simple schematic manner; and repeated components may be represented by the same number or similar number.
此外,本文中第一、第二、第三等用語只係用來描述不同元件或成分,而對元件/成分本身並無限制,因此,第一元件/成分亦可改稱為第二元件/成分。且本文中之元件/成分/機構/模組之組合非此領域中之一般周知、常規或習知之組合,不能以元件/成分/機構/模組本身是否為習知,來判定其組合關係是否容易被技術領域中之通常知識者輕易完成。In addition, the terms "first", "second", "third" and the like in this article are only used to describe different elements or components, and do not limit the elements/components themselves. Therefore, the first element/component can also be renamed as the second element/component. Moreover, the combination of elements/components/mechanisms/modules in this article is not a generally known, conventional or familiar combination in this field. Whether the elements/components/mechanisms/modules themselves are familiar cannot be used to determine whether their combination relationship is easy to be completed by a person of ordinary skill in the technical field.
請參閱圖1及圖2,電子裝置100包含一電子元件110、一加熱元件120以及一並聯線路130,加熱元件120係設在電子元件110上,並聯線路130將電子元件110和加熱元件120並聯連接。Referring to FIG. 1 and FIG. 2 , the
具體而言,電子元件110可為發光二極體,其包含元件基板111、第一型半導體層112、主動層113、第二型半導體層114、氧化銦錫(ITO)層115、P極116、N極117以及保護層118。元件基板111可例如為藍寶石材質製成,第一型半導體層112可例如為N型的氮化物半導體堆疊層,如摻雜N型摻質之氮化鎵(GaN)、氮化鋁鎵(AlGaN)、氮化鋁銦鎵(AlInGaN)或氮化銦鎵(InGaN)等。主動層113可採用量子井(quantum well),例如為多重量子井(multiple quantum wells)。第二型半導體層114可例如為P型的氮化物半導體堆疊層,如摻雜P型摻質之氮化鎵、氮化鋁鎵、氮化鋁銦鎵或氮化銦鎵等,本發明使用材料舉例同前但不以此為限,且結構亦不限於此。Specifically, the
P極116可例如為多層導體結構而依序包含第一鈦層1161、鋁層1162以及第二鈦層1163。N極117亦可為多層結構(於圖式中未呈現多層)且和P極116的組成相同。在其他實施例中,P極與N極可為單層導體結構而僅包含一金屬。The P-pole 116 may be, for example, a multi-layer conductor structure and sequentially include a first titanium layer 1161, an aluminum layer 1162, and a second titanium layer 1163. The N-pole 117 may also be a multi-layer structure (multi-layers are not shown in the figure) and have the same composition as the P-pole 116. In other embodiments, the P-pole and the N-pole may be a single-layer conductor structure and include only a metal.
加熱元件120可設置於電子元件110上且包含一第一連接區121、第二連接區122及一加熱區123,第一連接區121可以係設置於P極116的上方並與P極116電性連接,而第二連接區122則係設置於N極117的上方並與N極117電性連接,加熱區123連接於第一連接區121及第二連接區122之間,第一連接區121、第二連接區122及加熱區123的材質可均為氧化銦錫,而可使加熱區123、第一連接區121及第二連接區122連接後形成電流通道,而能供電流流過。在其他實施例中,加熱元件的材料可為氧化鋅、鎢、氮化鉭或氧化鉭,包含但不以此為限。The
由於加熱元件120的第一連接區121、第二連接區122及加熱區123連接後可形成電流通道,而P極116、氧化銦錫層115、第二型半導體層114、主動層113、第一型半導體層112、N極117可形成一電流通道,此二電流通道共用二端的節點,而可視為並聯線路130。Since the
在第1實施例中,可各別於電子元件110和加熱元件120製成時一併製成第一錫凸塊141及第二錫凸塊142。換句話說,電子元件110、加熱元件120、第一錫凸塊141及第二錫凸塊142可被製作為一體。In the first embodiment, the
如圖2所示,第一連接區121及第二連接區122於一Y軸上的寬度W1短於加熱區123於Y軸上的寬度W2,且第一連接區121及第二連接區122於一X軸上的長度L1長於加熱區123於X軸上的長度L2。As shown in FIG. 2 , a width W1 of the first connecting
請參閱圖3、圖4以及圖5,並一併參閱圖1及圖2,電子裝置100可被置於一基板S1上方。基板S1上包含第一基板焊點S11及第二基板焊點S12,第一基板焊點S11用以與電子裝置100的P極116電性連接,第二基板焊點S12則用以與電子裝置100的N極117電性連接,如此基板S1上的驅動電路即可控制電子元件110的啟閉。基板S1可為薄膜電晶體(TFT)基板,在其他實施例中,基板可以是其他種包括主動元件的線路板,但不以此為限。Please refer to FIG. 3, FIG. 4 and FIG. 5, and refer to FIG. 1 and FIG. 2 together. The
如圖3、圖4及圖5所示,第一基板焊點S11及第一錫凸塊141之間可設置焊料S2,第二基板焊點S12及第二錫凸塊142之間亦可設置焊料S2。在初始通予一加熱電流I1時,其順向偏壓高於電子元件110起始電壓,故並聯線路130中第一基板焊點S11、第一錫凸塊141、P極116、氧化銦錫層115、第二型半導體層114、主動層113、第一型半導體層112、N極117的電流通道亦會流入加熱電流I1中的一部分;並聯線路130中第一基板焊點S11、第一錫凸塊141、第一連接區121、加熱區123、第二連接區122及第二錫凸塊142的電流通道可供流入加熱電流I1的另一部分,加熱電流I1與順向電流同向,加熱電流I1約為30毫安且持續20毫秒,此時可讓加熱區123升至約260
oC,並讓第一錫凸塊141、焊料S2及第二錫凸塊142熔化,並能使電子元件110與基板S1完成焊接。在其他實施例中,在初始通予加熱電流時,可讓順向偏壓低於電子元件起始電壓,故此時並聯線路中第一基板焊點、第一錫凸塊、P極、氧化銦錫層、第二型半導體層、主動層、第一型半導體層、N極的電流通道無法流入加熱電流,而加熱電流是全部流入加熱元件。在其他實施例中,第一錫凸塊及第二錫凸塊亦可作為焊料使用,而可不用設置另外的焊料。
As shown in FIG3, FIG4 and FIG5, solder S2 can be disposed between the first substrate solder joint S11 and the
之後,可升高電流,即,通入一熔斷電流I2,熔斷電流I2約為200毫安且持續1毫秒,此時可讓加熱區123升至約400
oC並產生裂痕,如此將無法再使電流流過並聯線路130中第一連接區121、加熱區123及第二連接區122的電流通道。
Afterwards, the current can be increased, that is, a melting current I2 is introduced, the melting current I2 is about 200 mA and lasts for 1 millisecond. At this time, the
換句話說,第1實施例係透過調控電流大小來達成二段式的升溫,第一段升溫可熔化焊料S2,而第二段升溫可讓並聯線路130中第一連接區121、加熱區123及第二連接區122的電流通道失效,如此可直接使用基板S1上原有之第一基板焊點S11、第二基板焊點S12及驅動電路即可達到焊接效果,而不用再額外設計其他加熱元件。In other words, the first embodiment achieves a two-stage temperature rise by adjusting the current size. The first stage of temperature rise can melt the solder S2, and the second stage of temperature rise can disable the current channels of the
請參閱圖6,並一併參閱圖1至圖3,除如圖4於並聯線路130通入相對於電子元件110之順向電流外,亦可如圖6於並聯線路130通入相對於電子元件110之逆向電流(即由第二基板焊點S12、第二錫凸塊142流入再由第一錫凸塊141及第一基板焊點S11流出之電流),且在焊接時,基板S1係給予逆向偏壓,然不以上述揭露為限。Please refer to FIG. 6 and FIG. 1 to FIG. 3 together. In addition to passing a forward current relative to the
請參閱圖7,第2實施例的電子裝置的結構與焊接過程和第1實施例類似,不同之處在於,加熱元件220包含二縷空處224位於加熱區223,各縷空處224呈長方形,如此使得加熱元件220的阻值為55.8 Ω並相異於加熱元件120的阻值。Please refer to FIG. 7 . The structure and welding process of the electronic device of the second embodiment are similar to those of the first embodiment. The difference is that the
請參閱圖8,第3實施例的電子裝置的結構與焊接過程和第1實施例類似,不同之處在於加熱元件320包含複數縷空處324位於加熱區323,各縷空處324呈正方形,如此使得加熱元件320的阻值可為44 Ω並相異於加熱元件120的阻值,同時亦相異於加熱元件220的阻值。在其他實施例中,亦可透過結構上的配置,設置所欲達到之加熱元件的阻值,不以上述揭露為限。Please refer to FIG8 . The structure and welding process of the electronic device of the third embodiment are similar to those of the first embodiment, except that the
請參閱圖9及圖10,基板S1上設有加熱元件420及電子元件410。Please refer to FIG. 9 and FIG. 10 , a
具體而言,電子元件410可為發光二極體,其包含元件基板、第一型半導體層、主動層、第二型半導體層、氧化銦錫層、P極以及N極,並且可設置第一錫凸塊441及第二錫凸塊442分別連接P極及N極。而與第1實施例不同之處在於,加熱元件420係設置於基板S1,而非設置於電子元件410以與電子元件410一體成型。更具體地,加熱元件420可包含一第一連接區421、一第二連接區422及加熱區423,第一連接區421位於基板S1的表面與第一基板焊點S11之間,第二連接區422位於基板S1的表面與第二基板焊點S12之間,加熱區423則位於基板S1的表面並連接第一連接區421及第二連接區422。第一連接區421、第二連接區422及加熱區423的材質可均為氧化銦錫,而可使第一連接區421、第二連接區422及加熱區423連接後形成電流通道,由於第一基板焊點S11係對應P極,第二基板焊點S12係對應N極,故可與P極、氧化銦錫層、第二型半導體層、主動層、第一型半導體層、N極形成的另一電流通道組成並聯線路430。Specifically, the
如圖9及圖10所示,導線Wr1可連接第一基板焊點S11,導線Wr2可連接第二基板焊點S12,並且透過LED驅動器D1控制給電。而第一連接區421及第二連接區422與第一基板焊點S11及第二基板焊點S12的形狀相同,故圖10的俯視圖中不可見第一連接區421及第二連接區422。因此,在焊接時,由LED驅動器D1控制先給予加熱電流,此時加熱電流流經第一連接區421、加熱區423及第二連接區422,而能熔化焊料S2。之後,可給予熔斷電流,加熱區423產生裂痕,以將並聯線路430中第一連接區421、加熱區423及第二連接區422的電流通道斷開。在其他實施例中,電子元件上設置的第一錫凸塊及第二錫凸塊亦可作為焊料使用,而可不用設置另外的焊料。As shown in FIG9 and FIG10, the wire Wr1 can be connected to the first substrate soldering point S11, and the wire Wr2 can be connected to the second substrate soldering point S12, and the power supply is controlled by the LED driver D1. The
請參閱圖11,焊接電子元件之方法500包含基板提供步驟510、電子元件提供步驟520、導電焊接步驟530及導電斷開步驟540。11 , the method 500 for soldering electronic components includes a substrate providing step 510 , an electronic component providing step 520 , a conductive soldering step 530 , and a conductive disconnecting step 540 .
基板提供步驟510中,提供一基板,基板包含一第一基板焊點及一第二基板焊點。In the substrate providing step 510, a substrate is provided, wherein the substrate includes a first substrate soldering point and a second substrate soldering point.
電子元件提供步驟520中,提供一電子元件,其設有一第一元件焊點及一第二元件焊點,使第一元件焊點透過一焊料接觸第一基板焊點,且使第二元件焊點透過另一焊料接觸第二基板焊點。In the electronic component providing step 520, an electronic component is provided, which has a first component solder joint and a second component solder joint, so that the first component solder joint contacts the first substrate solder joint through a solder, and the second component solder joint contacts the second substrate solder joint through another solder.
導電焊接步驟530中,透過第一基板焊點及第二基板焊點提供一第一電流給一導電加熱結構,導電加熱結構位於電子元件上以於第一元件焊點及第二元件焊點之間形成電流通道,或位於基板上以於第一基板焊點及第二基板焊點之間形成電流通道,第一電流經過電流通道,使導電加熱結構發熱以讓前述一焊料熔化並連接第一基板焊點與第一元件焊點,及使前述另一焊料熔化並連接第二基板焊點與第二元件焊點。 In the conductive soldering step 530, a first current is provided to a conductive heating structure through the first substrate soldering point and the second substrate soldering point. The conductive heating structure is located on the electronic component to form a current channel between the first component soldering point and the second component soldering point, or is located on the substrate to form a current channel between the first substrate soldering point and the second substrate soldering point. The first current passes through the current channel to heat the conductive heating structure to melt the aforementioned solder and connect the first substrate soldering point and the first component soldering point, and to melt the aforementioned other solder and connect the second substrate soldering point and the second component soldering point.
導電斷開步驟540中,透過第一基板焊點及第二基板焊點提供一第二電流給導電加熱結構,以斷開電流通道。 In the conductive disconnection step 540, a second current is provided to the conductive heating structure through the first substrate solder joint and the second substrate solder joint to disconnect the current channel.
配合圖1的第1實施例而言,第一錫凸塊141可被定義為第一元件焊點,第二錫凸塊142可被定義為第二元件焊點,加熱元件120可為導電加熱結構而位於電子元件110上;或者,當第一錫凸塊141及第二錫凸塊142做為焊料使用時,P極116可被定義為第一元件焊點,N極117可被定義為第二元件焊點。又,配合圖9的第4實施例而言,加熱元件420可為導電加熱結構而位於基板S1上。據此,可藉由基板上的第一基板焊點及第二基板焊點直接提供第一電流給導電加熱結構,導電加熱結構通電後將產生熱能並可熔化焊料,最後再透過加大電流,而能使加熱區產生裂痕,而使得電流通道斷開。通電時,LED驅動器可控制第一基板焊點及第二基板焊點之間產生加熱電流,而加熱電流中流入導電加熱結構的部分即可被定義為
第一電流,在一實施例中,加熱電流可以是完全流入導電加熱結構並相等於第一電流,然不以此為限;類似地,LED驅動器可控制第一基板焊點及第二基板焊點之間產生熔斷電流,而熔斷電流中流入導電加熱結構的部分即可被定義為第二電流,而加熱電流小於熔斷電流,故第一電流亦小於第二電流。
In conjunction with the first embodiment of FIG. 1 , the
請參閱圖12,在一實施例中,可執行步驟501,提供一基板,於其上係具有一欲焊接位置。如圖3所示,基板S1可包含第一基板焊點S11及第二基板焊點S12。 Please refer to FIG. 12. In one embodiment, step 501 may be performed to provide a substrate having a desired welding position thereon. As shown in FIG. 3, the substrate S1 may include a first substrate welding point S11 and a second substrate welding point S12.
執行步驟502,將一電子裝置放置於基板之欲焊接位置處。如圖1及圖3所示,其將電子裝置100放置於基板S1上,並且第一錫凸塊141對應第一基板焊點S11,第二錫凸塊142對應第二基板焊點S12。
Perform step 502 to place an electronic device at the desired soldering position of the substrate. As shown in Figures 1 and 3, the
執行步驟503,於電子裝置中之電子元件和基板之欲焊接位置處間施加一焊料。如圖3所示,可施加焊料S2於第一基板焊點S11與第一錫凸塊141之間,及施加焊料S2於第二基板焊點S12與第二錫凸塊142之間。在其他實施例中,焊料係可分別施加於電子元件之P極和N極上,即第一錫凸塊及第二錫凸塊相當於焊料,而不用再施加額外的焊料。
Perform step 503 to apply a solder between the electronic component in the electronic device and the desired soldering position of the substrate. As shown in FIG3 , solder S2 can be applied between the first substrate solder joint S11 and the
執行步驟504,於電子裝置中之並聯線路通入一加熱電流,使並聯線路上之加熱元件產生熱量以熔融焊料,而藉熔融之焊料將電子元件焊固於基板之欲焊接位置處。其中加熱電流係可為相對於並聯線路上之電子元件之順向電流。如圖3至圖5所示,可使加熱電流I1由第一基板焊點S11及第一錫凸塊141流入第一連接區121、加熱區123及第二連接區122,再由第二錫凸塊142及第二基板焊點S12流出(流經上述元件內的電流亦即為第一電流)。如此讓加熱區123可通電升溫,並讓第一錫凸塊141、焊料S2及第二錫凸塊142熔化,以將電子元件110與基板S1焊接。在其他實施例中,加熱電流係可為相對於並聯線路上之電子元件之逆向電流。Step 504 is executed to pass a heating current through the parallel circuit in the electronic device, so that the heating element in the parallel circuit generates heat to melt the solder, and the electronic element is soldered to the desired soldering position of the substrate by the molten solder. The heating current can be a forward current relative to the electronic element in the parallel circuit. As shown in Figures 3 to 5, the heating current I1 can flow from the first substrate solder point S11 and the
之後,可執行步驟505中,於電子裝置通入較加熱電流為大之一熔斷電流,而使並聯線路於加熱元件處形成斷路,而熔斷電流係可為相對於電子裝置上之電子元件之順向電流。如圖3至圖5所示,當焊料S2熔化完成焊接後,第一連接區121、第二連接區122及加熱區123的電流通道即無存在的必要。因此,可透過通入熔斷電流I2(例如係200毫安),而使熔斷電流I2全部或至少一部分(此時流經第一連接區121、加熱區123及第二連接區122內的電流即為第二電流)通入以使加熱區123產生裂痕,如此第一連接區121、第二連接區122及加熱區123的電流通道將斷開,第一連接區121及第二連接區122無法透過加熱區123電性連接。最後,可執行步驟506中,停止通入熔斷電流。請特別注意,於本文中,係可包含「將加熱電流關閉後,再通入熔斷電流」以及「不停止加熱電流而是將電流加大,以使加熱電流變成熔斷電流」二種實施態樣。Afterwards, step 505 may be performed to pass a melting current greater than the heating current into the electronic device, so that the parallel circuit is broken at the heating element, and the melting current may be a forward current relative to the electronic element on the electronic device. As shown in FIGS. 3 to 5 , when the solder S2 is melted and the welding is completed, the current channels of the first connecting
請參閱圖13,於另一實施例中,執行步驟511,其包含提供一基板,於其上係具有一欲焊接位置,於基板上係更設有一加熱元件,加熱元件係對應於欲焊接位置設置。如圖9所示,基板S1上包含第一基板焊點S11及第二基板焊點S12,加熱元件420的第一連接區421、第二連接區422及加熱區423均位於基板S1的表面。Please refer to FIG. 13 , in another embodiment, step 511 is performed, which includes providing a substrate having a desired welding position thereon, and further providing a heating element on the substrate, the heating element being arranged corresponding to the desired welding position. As shown in FIG. 9 , the substrate S1 includes a first substrate welding point S11 and a second substrate welding point S12, and the
執行步驟512,將一電子元件放置於基板之欲焊接位置處,並使電子元件與加熱元件以並聯的方式連接以形成一並聯線路。如圖9所示,放置電子元件410於基板S1上,且第一錫凸塊441對應第一基板焊點S11及第一連接區421,第二錫凸塊442對應第二基板焊點S12及第二連接區422,而形成並聯線路430。Execute step 512, place an electronic component at the desired soldering position of the substrate, and connect the electronic component and the heating element in parallel to form a parallel circuit. As shown in FIG. 9, place the
執行步驟513,於電子元件和基板之欲焊接位置處間施加一焊料。如圖9所示,可施加焊料S2於第一基板焊點S11與第一錫凸塊441之間,及施加焊料S2於第二基板焊點S12與第二錫凸塊442之間。在其他實施例中,焊料係可分別施加於電子元件之P極和N極上,即第一錫凸塊及第二錫凸塊相當於焊料,而不用再施加額外的焊料。Step 513 is performed to apply a solder between the electronic component and the desired soldering position of the substrate. As shown in FIG9 , the solder S2 may be applied between the first substrate solder joint S11 and the
執行步驟514,於並聯線路通入一加熱電流,使並聯線路上之加熱元件產生熱量以熔融焊料,而藉熔融之焊料將電子元件焊固於基板之欲焊接位置處。如圖9所示,可使加熱電流I1由第一基板焊點S11及第一錫凸塊441流入第一連接區421、加熱區423及第二連接區422(流經上述元件內的電流亦即為第一電流),再由第二錫凸塊442及第二基板焊點S12流出。如此讓加熱區423可通電升溫,並讓第一錫凸塊441、焊料S2及第二錫凸塊442熔化,以將電子元件410與基板S1焊接。在其他實施例中,亦可通入逆向電流。Step 514 is executed to pass a heating current through the parallel circuit, so that the heating element in the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder. As shown in FIG. 9 , the heating current I1 can flow from the first substrate soldering point S11 and the
之後,可執行步驟515中,於並聯線路通入較加熱電流為大之一熔斷電流,而使並聯線路於加熱元件處形成斷路。如圖9所示,當焊料S2熔化完成焊接後,第一連接區421、第二連接區422及加熱區423的電流通道即無存在的必要。因此,可透過通入熔斷電流I2(例如係200毫安),而使熔斷電流I2的全部或至少一部分(此時流經第一連接區421、加熱區423及第二連接區422內的電流即為第二電流)通入以使加熱區423產生裂痕,如此第一連接區421、第二連接區422及加熱區423的電流通道將斷開,第一連接區421及第二連接區422無法透過加熱區423電性連接。最後,可執行步驟516中,停止通入熔斷電流。Afterwards, a melting current greater than the heating current may be introduced into the parallel circuit in step 515, so that the parallel circuit is broken at the heating element. As shown in FIG9 , when the solder S2 is melted and the welding is completed, the current paths of the
本發明可更包含一種製造LED顯示器之方法,其係包括如圖11、圖12及圖13所述之焊接電子元件之方法500焊接LED。The present invention may further include a method for manufacturing an LED display, which includes welding LEDs according to the method 500 of welding electronic components as shown in FIG. 11 , FIG. 12 and FIG. 13 .
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.
100:電子裝置 110,410:電子元件 111:元件基板 112:第一型半導體層 113:主動層 114:第二型半導體層 115:氧化銦錫層 116:P極 1161:第一鈦層 1162:鋁層 1163:第二鈦層 117:N極 118:保護層 120,220,320,420:加熱元件 121,421:第一連接區 122,422:第二連接區 123、223、323、423:加熱區 130,430:並聯線路 141,441:第一錫凸塊 142,442:第二錫凸塊 224,324:縷空處 500:焊接電子元件之方法 510:基板提供步驟 520:電子元件提供步驟 530:導電焊接步驟 540:導電斷開步驟 501,502,503,504,505,506,511,512,513,514,515,516:步驟 D1:LED驅動器 I1:加熱電流 I2:熔斷電流 L1,L2:長度 S1:基板 S11:第一基板焊點 S12:第二基板焊點 S2:焊料 W1,W2:寬度 Wr1,Wr2:導線 X,Y:軸 100: electronic device 110,410: electronic component 111: component substrate 112: first type semiconductor layer 113: active layer 114: second type semiconductor layer 115: indium tin oxide layer 116: P pole 1161: first titanium layer 1162: aluminum layer 1163: second titanium layer 117: N pole 118: protective layer 120,220,320,420: heating element 121,421: first connection area 122,422: second connection area 123,223,323,423: heating area 130,430: parallel line 141,441: first solder bump 142,442: second solder bump 224,324: hollow space 500: method for soldering electronic components 510: substrate providing step 520: electronic component providing step 530: conductive soldering step 540: conductive disconnecting step 501,502,503,504,505,506,511,512,513,514,515,516: steps D1: LED driver I1: heating current I2: melting current L1,L2: length S1: substrate S11: first substrate solder joint S12: second substrate solder joint S2: solder W1,W2: width Wr1, Wr2: wire X, Y: axis
圖1繪示依照本發明第1實施例之一種電子裝置的示意圖; 圖2繪示圖1第1實施例之電子裝置的加熱元件的俯視示意圖; 圖3繪示依照本發明第1實施例之電子裝置焊接於一基板的焊接過程示意圖; 圖4繪示依照本發明第1實施例之電子裝置的一等效電路的焊接過程示意圖; 圖5繪示依照本發明第1實施例之電子裝置的加熱電流與熔斷電流的電流時間圖; 圖6繪示依照本發明第1實施例之電子裝置的另一等效電路的焊接過程示意圖; 圖7繪示依照本發明第2實施例之一種電子裝置的加熱元件的俯視示意圖; 圖8繪示依照本發明第3實施例之一種電子裝置的加熱元件的俯視示意圖; 圖9繪示依照本發明第4實施例之一種電子元件、加熱元件與一基板的示意圖; 圖10繪示圖9第4實施例之加熱元件與基板的俯視示意圖; 圖11繪示依照本發明第5實施例之一種焊接電子元件之方法的方塊流程圖; 圖12繪示圖11第5實施例之焊接電子元件之方法的一步驟流程圖;以及 圖13繪示圖11第5實施例之焊接電子元件之方法的另一步驟流程圖。 FIG. 1 is a schematic diagram of an electronic device according to the first embodiment of the present invention; FIG. 2 is a schematic diagram of a top view of a heating element of the electronic device of the first embodiment of FIG. 1; FIG. 3 is a schematic diagram of a welding process of welding an electronic device of the first embodiment of the present invention to a substrate; FIG. 4 is a schematic diagram of a welding process of an equivalent circuit of the electronic device of the first embodiment of the present invention; FIG. 5 is a current-time diagram of a heating current and a melting current of the electronic device of the first embodiment of the present invention; FIG. 6 is a schematic diagram of a welding process of another equivalent circuit of the electronic device of the first embodiment of the present invention; FIG. 7 is a schematic diagram of a top view of a heating element of an electronic device of the second embodiment of the present invention; FIG. 8 is a schematic diagram of a top view of a heating element of an electronic device of the third embodiment of the present invention; FIG9 is a schematic diagram of an electronic component, a heating element and a substrate according to the fourth embodiment of the present invention; FIG10 is a schematic diagram of a top view of the heating element and the substrate of the fourth embodiment of FIG9; FIG11 is a block flow chart of a method for welding electronic components according to the fifth embodiment of the present invention; FIG12 is a step flow chart of the method for welding electronic components of the fifth embodiment of FIG11; and FIG13 is another step flow chart of the method for welding electronic components of the fifth embodiment of FIG11.
100:電子裝置 100: Electronic devices
110:電子元件 110: Electronic components
111:元件基板 111: Component substrate
112:第一型半導體層 112: Type I semiconductor layer
113:主動層 113: Active layer
114:第二型半導體層 114: Type II semiconductor layer
115:氧化銦錫層 115: Indium tin oxide layer
116:P極 116:P Extreme
1161:第一鈦層 1161: First Titanium Layer
1162:鋁層 1162: Aluminum layer
1163:第二鈦層 1163: Second titanium layer
117:N極 117: N pole
118:保護層 118: Protective layer
121:第一連接區 121: First connection area
122:第二連接區 122: Second connection area
123:加熱區 123: Heating zone
130:並聯線路 130: Parallel circuit
141:第一錫凸塊 141: First solder bump
142:第二錫凸塊 142: Second solder bump
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CN202210876695.4A CN115986043A (en) | 2021-10-14 | 2022-07-25 | Electronic device, method for welding electronic element and method for manufacturing LED display |
US17/818,005 US20230121505A1 (en) | 2021-10-14 | 2022-08-08 | Electronic device, electronic element soldering method and light-emitting diode display manufacturing method |
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US202163255442P | 2021-10-14 | 2021-10-14 | |
US63/255,442 | 2021-10-14 |
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TW202316601A TW202316601A (en) | 2023-04-16 |
TWI839764B true TWI839764B (en) | 2024-04-21 |
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Citations (1)
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US20180174940A1 (en) | 2016-12-19 | 2018-06-21 | Intel Corporation | Fine-featured traces for integrated circuit package support structures |
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US20180174940A1 (en) | 2016-12-19 | 2018-06-21 | Intel Corporation | Fine-featured traces for integrated circuit package support structures |
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