TWI839419B - Component mounting system, component supply device, and component mounting method - Google Patents
Component mounting system, component supply device, and component mounting method Download PDFInfo
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Abstract
本發明係關於一種元件安裝系統、元件供應裝置以及元件安裝方法；也就是說，本發明之晶片安裝系統1係具備：供應晶片CP之晶片供應部11、在前端部來設置晶片支持部432a之頭頂部33H、以保持晶片CP之狀態來搬送第1晶片支持部512至移載位置Pos1為止之第1晶片搬送部51、以及保持晶片CP之第1晶片支持部512來位處於移載位置Pos1並且以藉由晶片支持部432a而支持晶片CP之中央部之狀態來移動晶片支持部432a至比起第1晶片支持部512還更加上方之鉛直上方側而由第1晶片支持部512開始移載晶片CP至頭頂部33H之支持部驅動部432b。The present invention relates to a component mounting system, a component supply device and a component mounting method; that is, the chip mounting system 1 of the present invention comprises: a chip supply unit 11 for supplying a chip CP, a head portion 33H having a chip support unit 432a provided at the front end, a first chip transport unit 51 for transporting a first chip support unit 512 to a transfer position Pos1 while holding the chip CP, and a support unit driving unit 432b for holding the first chip support unit 512 of the chip CP at the transfer position Pos1 and moving the chip support unit 432a to a directly upper side above the first chip support unit 512 while supporting the central portion of the chip CP by the chip support unit 432a, and starting to transfer the chip CP from the first chip support unit 512 to the head portion 33H.
Description
本發明係關於一種元件安裝系統、元件供應裝置以及元件安裝方法。The present invention relates to a component mounting system, a component supply device and a component mounting method.
（背景技術）(Background Technology)
提議：具備來保持基板之台座以及配置在台座上方之構裝結合部，以在構裝結合部之頭頂部來保持晶片之狀態，下降構裝結合部而使得晶片來接合於基板之方法（例如參考專利文獻1）。此外，也提議：在對於2個之被接合物之接合面來施行電漿處理之後，使得2個之被接合物之接合面間呈接觸而進行接合之方法（例如參考專利文獻2）。接著，也正在持續地提議：在接合於晶片之基板之接合面來施行電漿處理之後，使得晶片之接合面，接觸到基板而晶片接合於基板之方法。 （先前技術文獻） （專利文獻）Proposal: A method of bonding the chip to the substrate by lowering the bonding part while holding the chip at the top of the bonding part, which includes a pedestal for holding the substrate and a mounting joint disposed above the pedestal (for example, see Patent Document 1). In addition, a method of bonding the chip to the substrate by bringing the bonding surfaces of the two objects into contact after plasma treatment is performed on the bonding surfaces of the two objects to be bonded (for example, see Patent Document 2). Subsequently, a method of bonding the chip to the substrate by bringing the bonding surface of the chip into contact with the substrate after plasma treatment is performed on the bonding surface of the substrate to be bonded to the chip is also being continuously proposed. (Prior technical document) (Patent document)
（專利文獻1）日本特開2012－238775號公報 （專利文獻2）日本特表2003－523627號公報(Patent document 1) Japanese Patent Publication No. 2012-238775 (Patent document 2) Japanese Patent Publication No. 2003-523627
（發明概要） （發明所欲解決的課題）(Invention Summary) (Problem that the invention aims to solve)
在前述之方法，在晶片接合於基板之際之晶片接合面來附著異物或者是產生傷痕之時，則發生晶片和基板之間之接合不良。因此，在接合面來施行電漿處理之晶片而搬送至構裝結合部之頭頂部之際，要求：抑制起因於異物對於晶片接合面之附著以及例如搬送用治具之接觸而造成之晶片接合面之損傷或者是晶片接合面之微粒洗淨。此外，晶片活化之接合面係不可能接觸，因此，要求無接觸接合面而進行搬送之手法。In the aforementioned method, when foreign matter is attached to the chip bonding surface or scratches are generated when the chip is bonded to the substrate, poor bonding between the chip and the substrate occurs. Therefore, when the chip that has been subjected to plasma treatment on the bonding surface is transported to the top of the assembly bonding part, it is required to suppress the attachment of foreign matter to the chip bonding surface and damage to the chip bonding surface caused by contact with a transport jig, or to clean the particles on the chip bonding surface. In addition, the activated bonding surface of the chip cannot be touched, so a method of transporting without contacting the bonding surface is required.
本發明係有鑑於前述之事由而完成的；其目的係提供一種抑制異物對於元件接合面之附著和元件接合面之損傷之元件安裝系統、元件供應裝置以及元件安裝方法。 （用以解決課題的手段）The present invention was completed in view of the above reasons; its purpose is to provide a component mounting system, component supply device and component mounting method that inhibit foreign matter from adhering to the component joint surface and damaging the component joint surface. (Means for solving the problem)
為了達成前述之目的，因此，本發明之元件安裝系統，係在基板來安裝元件的元件安裝系統，具備：供應前述元件之元件供應部、在前端部來保持相反於接合在前述元件之前述基板之安裝面之接合面側之相反側之頭頂部、具有以非接觸來保持由前述之元件供應部開始供應之前述元件之前述接合面側之第1元件保持部並且以保持前述元件之狀態來搬送前述之第1元件保持部至在前述之頭頂部來移載前述元件之移載位置為止之第1元件搬送部、保持前述基板之基板保持部、以及以由前述之第1元件搬送部開始移載之前述之元件來保持於前述頭頂部之前端部之狀態而呈相對地移動前述之頭頂部至由前述之頭頂部開始朝向至前述基板保持部之第1方向而在前述基板之前述之安裝面來接觸前述元件之接合面而在前述之安裝面來安裝前述元件之頭頂驅動部。In order to achieve the above-mentioned purpose, the component mounting system of the present invention is a component mounting system for mounting components on a substrate, and comprises: a component supplying section for supplying the above-mentioned component, a head portion for holding the side opposite to the bonding surface side of the mounting surface of the substrate before the above-mentioned component is bonded at the front end, a first component holding section for holding the bonding surface side of the above-mentioned component supplied by the above-mentioned component supplying section in a non-contact manner, and for conveying the above-mentioned first component holding section to the substrate in a state where the above-mentioned component is held. The first component transporting portion that moves the aforementioned component by the aforementioned top portion to the transfer position, the substrate holding portion that holds the aforementioned substrate, and the top driving portion that relatively moves the aforementioned top portion to the first direction from the aforementioned top portion toward the aforementioned substrate holding portion in a state where the aforementioned component is held at the front end portion of the aforementioned top portion after being transferred by the aforementioned first component transporting portion, and contacts the bonding surface of the aforementioned component at the aforementioned mounting surface of the aforementioned substrate, and mounts the aforementioned component on the aforementioned mounting surface.
由其他之觀點而觀看之本發明之元件安裝方法，係在基板來安裝元件的元件安裝方法，包含：供應前述元件之步驟、藉由以非接觸而保持接合在供應之前述元件之前述基板之安裝面之接合面側之第1元件保持部來保持前述元件之狀態而搬送前述之第1元件保持部至在頭頂部來移載前述元件之移載位置為止之步驟、以及藉由以移載於前述頭頂部之前述元件來保持於前述頭頂部之前端部之狀態而由前述之頭頂部開始朝向至保持前述基板之基板保持部之第1方向呈相對地移動前述之頭頂部並且在前述基板之前述之安裝面來接觸前述元件之接合面而在前述之安裝面來安裝前述元件之步驟。 （發明效果）The component mounting method of the present invention viewed from another perspective is a component mounting method for mounting components on a substrate, comprising: a step of supplying the aforementioned component, a step of transporting the aforementioned first component holding portion to a transfer position for transferring the aforementioned component at the head top portion by holding the aforementioned component in a state of non-contact with the first component holding portion that is bonded to the bonding surface side of the mounting surface of the aforementioned substrate before the aforementioned component is supplied, and a step of mounting the aforementioned component on the aforementioned mounting surface by relatively moving the aforementioned head top portion from the aforementioned head top portion toward the first direction of the substrate holding portion that holds the aforementioned substrate while the aforementioned component transferred to the aforementioned head top portion is held at the front end portion of the aforementioned head top portion and by contacting the bonding surface of the aforementioned component at the aforementioned mounting surface of the aforementioned substrate. (Effect of the invention)
如果是藉由本發明之元件安裝系統和元件安裝方法的話，則藉由以非接觸而保持供應之元件之接合面側之第1元件保持部來保持元件之狀態，而搬送元件至在頭頂部來移載元件之移載位置為止。可以藉此而無接觸表面活化之元件之接合面，來搬送元件，並且，抑制由於接觸元件之接合面而造成之異物對於元件接合面之附著以及元件接合面之損傷，因此，抑制元件和基板之間之接合不良之發生。According to the component mounting system and component mounting method of the present invention, the first component holding portion that holds the bonding surface side of the supplied component without contact is used to hold the component in a state, and the component is transported to the transfer position where the component is transferred at the top. The component can be transported without contacting the bonding surface of the surface-activated component, and foreign matter that is caused by contacting the bonding surface of the component is prevented from adhering to the bonding surface of the component and damage to the bonding surface of the component, thereby preventing the occurrence of poor bonding between the component and the substrate.
（用以實施發明的形態） （實施形態1）(Form for implementing the invention) (Implementation form 1)
在以下，關於成為本發明之實施形態之元件安裝系統之晶片安裝系統，參考圖式，同時，進行說明。In the following, a chip mounting system that is a component mounting system of an embodiment of the present invention will be described with reference to the drawings.
本實施形態之晶片安裝系統係在基板上而安裝元件之系統。元件係例如由切割之基板來供應之半導體晶片（在以下，僅稱為「晶片」。）。向來，不容易防止在晶片和基板之接合時之微粒對於接合界面之混入。因此，不容易進行在晶片之整個面和基板之接合，藉由使用銲錫凸塊而製作間隙或者是微粒侵入至銲錫內，來減低微粒對於接合之影響。但是，在使用銲錫凸塊之方法，在縮小銲錫凸塊之大小，有限度存在，形成於基板之電極間距係必須為50μm程度。相對於此，在無使用凸塊而在例如形成於接合面之電極和絕緣體層呈面接合於同一面上之方法，最好是能夠削減前述之電極間距至數μm為止。像這樣，在晶片之接合之側無設置凸塊並且接合面呈面接觸於基板之安裝面而進行接合之狀態下，本實施形態之晶片安裝系統係特別有效。但是，至少在晶片之接合面來進行表面活化而進行接合之方法，無法接觸到晶片之接合面，並且，成為藉由固相而進行接合之方法，因此，在接合面來載置微粒之時，可以成為空隙之發生原因。在表面活化接合方法，例如在藉由Ar照射而活化存在於晶片接合面之Au或Cu之後，在大氣中，接合於常溫乃至低溫。此外，在親水化接合方法，在藉由在晶片之接合面來施行電漿處理而進行親水化之後，在藉由呈相互地接觸基板之安裝面和晶片之接合面而進行假結合之後，藉由進行加熱處理而變化成為堅固之共有結合，進行接合。例如在晶片之接合面而存在絕緣物和Cu電極之狀態下，也適合在藉由對於接合面來進行CMP研磨而進行平坦化之後，進行面接合之狀態。接著，在本實施形態之晶片安裝系統，可以無接觸到晶片之接合面，可以搬送晶片至構裝結合裝置之頭頂部為止，並且，可以防止微粒對於晶片之接合面和基板之安裝面之附著。在此，所謂「基板之安裝面」係表示安裝晶片之面。The chip mounting system of this embodiment is a system for mounting components on a substrate. The component is, for example, a semiconductor chip (hereinafter, simply referred to as a "chip") supplied from a cut substrate. Conventionally, it has been difficult to prevent particles from being mixed into the bonding interface when the chip and the substrate are bonded. Therefore, it is not easy to bond the entire surface of the chip and the substrate, and the effect of particles on the bonding is reduced by using solder bumps to create gaps or allowing particles to intrude into the solder. However, in the method of using solder bumps, there is a limit to reducing the size of the solder bumps, and the electrode spacing formed on the substrate must be about 50μm. In contrast, in a method in which, for example, an electrode formed on a bonding surface and an insulating layer are bonded to the same surface without using bumps, it is preferable to be able to reduce the aforementioned electrode distance to only a few μm. In this way, the chip mounting system of this embodiment is particularly effective in a state in which no bumps are provided on the bonding side of the chip and the bonding surface is in surface contact with the mounting surface of the substrate for bonding. However, in a method in which surface activation is performed at least on the bonding surface of the chip, the bonding surface of the chip cannot be contacted, and it becomes a method of bonding through a solid phase. Therefore, when particles are placed on the bonding surface, it may become a cause of the occurrence of voids. In the surface activation bonding method, for example, after activating Au or Cu present on the bonding surface of the chip by Ar irradiation, bonding is performed at room temperature or even low temperature in the atmosphere. In addition, in the hydrophilization bonding method, after hydrophilization is performed by performing plasma treatment on the bonding surface of the chip, after performing a false bond by bringing the mounting surface of the substrate and the bonding surface of the chip into contact with each other, the bonding is changed into a strong common bond by performing a heat treatment. For example, in a state where an insulator and a Cu electrode exist on the bonding surface of the chip, it is also suitable to perform a surface bonding state after flattening the bonding surface by performing CMP polishing. Then, in the chip mounting system of this embodiment, the chip can be transported to the top of the assembly bonding device without touching the bonding surface of the chip, and the adhesion of particles to the bonding surface of the chip and the mounting surface of the substrate can be prevented. Here, the so-called "mounting surface of the substrate" refers to the surface on which the chip is mounted.
正如圖1所示，本實施形態之晶片安裝系統1係具備：晶片供應裝置10和構裝結合裝置30以及控制部90。此外，在以下之說明，適度地圖1之±Z方向成為上下方向，XY方向成為水平方向而進行說明。晶片供應裝置10係由貼合在保持於薄片保持框112之薄片TE之複數個之晶片CP之中而取得1個之晶片CP，來供應至構裝結合裝置30之元件供應裝置。在此，作為薄片TE係可以採用在例如具有黏著性之某一面側來保持複數個之晶片CP之黏著薄片。晶片供應裝置10係具有：晶片供應部11、以及搬送由晶片供應部11來供應之晶片CP至後面敘述之構裝結合裝置30之頭頂部33H為止之第1晶片搬送部51。As shown in FIG. 1 , the chip mounting system 1 of the present embodiment comprises: a chip supply device 10, an assembly and bonding device 30, and a control unit 90. In addition, in the following description, the ±Z direction of FIG. 1 is appropriately described as the up-down direction, and the XY direction is described as the horizontal direction. The chip supply device 10 is a component supply device that obtains one chip CP from a plurality of chips CP bonded to a sheet TE held in a sheet holding frame 112, and supplies it to the assembly and bonding device 30. Here, as the sheet TE, an adhesive sheet that holds a plurality of chips CP on a certain side having adhesiveness, for example, can be used. The chip supply device 10 comprises: a chip supply unit 11, and a first
晶片供應部11係具有：保持薄片保持框112之框保持部119、由複數個之晶片CP之中而檢取1個晶片CP之檢取機構111以及蓋體114的元件供應部。此外，晶片供應部11係具有驅動薄片保持框112至旋轉於XY方向或Z軸周圍之方向之保持框驅動部113。框保持部119係以貼合薄片TE之複數個之晶片CP之面來成為鉛直上方（＋Z方向）側之姿勢，而保持薄片保持框112。構成為由薄片保持框112和框保持部119開始，以接合面CPf朝向成為第1方向側之鉛直上方側之姿勢，來保持貼合在相反於複數個之晶片CP各個之接合面CPf側之相反側之薄片TE的薄片保持部。The wafer supply unit 11 is a component supply unit including a frame holding unit 119 for holding a wafer holding frame 112, a picking mechanism 111 for picking up one wafer CP from a plurality of wafers CP, and a cover 114. In addition, the wafer supply unit 11 has a holding frame driving unit 113 for driving the wafer holding frame 112 to rotate in the XY direction or the direction around the Z axis. The frame holding unit 119 holds the wafer holding frame 112 in a posture that the surface of the plurality of wafers CP bonded to the wafer TE is in a position facing straight up (+Z direction). The sheet holding portion is composed of a sheet holding frame 112 and a frame holding portion 119, and holds a sheet TE bonded to the opposite side of the bonding surface CPf of each of a plurality of chips CP with the bonding surface CPf facing the directly upper side of the first direction side.
檢取機構111係藉著由相反於薄片TE之複數個之晶片CP側之相反側開始，切出（突出）複數個之晶片CP之中之1個晶片CP，而成為由薄片TE來脫離1個晶片CP之狀態。在此，檢取機構111係保持成為不同於作為藉由相反於晶片CP之接合面CPf側之相反側之後面敘述之頭頂部33H而保持之第1部位之中央部之不同之第3部位之周圍部，來切出晶片CP。此外，第3部位係可以相同於第1部位。檢取機構111係具有針頭111a，正如圖1之箭號AR15所示，可以移動於鉛直方向。蓋體114係進行配置而覆蓋複數個之晶片CP之鉛直上方，在對向於檢取機構111之部分，設置孔洞114a。針頭111a係例如存在4個。但是，針頭111a之數目係可以是3個，並且，也可以是5個以上。檢取機構111係藉著由薄片TE之鉛直下方（－Z方向）開始，使得針頭111a突穿薄片TE，提高晶片CP至鉛直上方（＋Z方向），而供應晶片CP。接著，貼合於薄片TE之各個之晶片CP係藉由針頭111a而通過蓋體114之孔洞114a，分別個別地突出於每1個蓋體114之上方，交接於第1晶片搬送部51。保持框驅動部113係藉由驅動薄片保持框112至旋轉於XY方向或Z軸周圍之方向，而改變位處於針頭111a之鉛直下方之晶片CP之位置。The picking mechanism 111 cuts out (protrudes) one chip CP from the plurality of chips CP from the opposite side of the plurality of chips CP sides to achieve a state where one chip CP is separated from the sheet TE. Here, the picking mechanism 111 cuts out the chip CP by holding the peripheral portion of the third portion different from the central portion of the first portion held by the head top portion 33H described later on the opposite side of the bonding surface CPf side of the chip CP. In addition, the third portion may be the same as the first portion. The picking mechanism 111 has a needle 111a, which can be moved in the vertical direction as shown by the arrow AR15 in FIG. 1. The cover 114 is configured to cover the upper part of a plurality of chips CP, and a hole 114a is provided in a portion opposite to the picking mechanism 111. There are, for example, four needles 111a. However, the number of needles 111a may be three, and may be five or more. The picking mechanism 111 supplies the chip CP by starting from the lower part of the sheet TE (-Z direction) so that the needle 111a penetrates the sheet TE and raises the chip CP to the upper part (+Z direction). Then, each chip CP attached to the sheet TE passes through the hole 114a of the cover 114 through the needle 111a, and protrudes from the upper part of each cover 114 individually, and is delivered to the first
第1晶片搬送部51係搬送由晶片供應部11來供應之晶片CP，至在頭頂部33H來移載晶片CP之移載位置Pos1為止之第1元件搬送部。第1晶片搬送部51係具有本體部511、成為第1元件保持部之第1晶片保持部512和晶片蓋體513。本體部511係正如圖1之箭號AR14所示，在預先設定之待機位置和移載位置Pos1之間，移動第1晶片保持部512。第1晶片保持部512係例如圖2所示，具有主片512b以及由主片512b開始延在於同一方向之2個之腳片512a。在此，2個之腳片512a之間隔係設定更加短於晶片CP之平面俯視之最小幅寬。接著，第1晶片保持部512係以在2個之腳片512a之間來懸掛晶片CP之狀態，而保持成為晶片CP之第2部位之周圍部。回復到圖1，晶片蓋體513係設置在第1晶片保持部512，以第1晶片保持部512來保持晶片CP之狀態，而覆蓋晶片CP之接合面CPf側之元件蓋體。The first
構裝結合裝置30係具有：台座31、具有頭頂部33H之構裝結合部33以及驅動頭頂部33H之頭頂驅動部36。頭頂部33H係例如圖3（A）所示，具有：晶片工具411、頭頂本體部413、晶片支持部432a和支持部驅動部432b。晶片工具411係例如由矽（Si）所形成。頭頂本體部413係具有：具備用以在晶片工具411來吸附及保持晶片CP之吸附部之保持機構440、以及擠壓晶片CP之中央部之擠壓機構431。保持機構440係透過晶片工具411而保持晶片CP之周圍部。擠壓機構431係可以在頭頂本體部413之前端面之中央部，移動於鉛直方向，具有：朝向至鉛直上方而擠壓晶片CP之中央部之擠壓部431a、以及驅動擠壓部431a之擠壓驅動部431b。此外，頭頂本體部413係也具有用以藉由真空吸附而固定晶片工具411在頭頂本體部413之吸附部（無圖示）。擠壓驅動部431b係以在晶片工具411來保持晶片CP之周圍部之狀態而移動擠壓部431a至鉛直上方之時，晶片CP之中央部係擠壓至鉛直上方（＋Z方向），晶片CP之中央部係成為比起其周圍部還更加地彎曲至鉛直上方之狀態。晶片工具411係具有：形成在對應於頭頂本體部413之保持機構440之位置之貫通孔411a、擠壓部431a***至內側之貫通孔411b、以及晶片支持部432a***至內側之貫通孔411c。The assembly and coupling device 30 comprises: a pedestal 31, an assembly and coupling portion 33 having a head top portion 33H, and a head top driving portion 36 for driving the head top portion 33H. The head top portion 33H comprises: a wafer tool 411, a head top body portion 413, a wafer support portion 432a, and a support portion driving portion 432b, as shown in FIG. 3 (A). The wafer tool 411 is formed of, for example, silicon (Si). The head top body portion 413 comprises: a holding mechanism 440 having an adsorption portion for adsorbing and holding a wafer CP on the wafer tool 411, and a squeezing mechanism 431 for squeezing the central portion of the wafer CP. The holding mechanism 440 holds the peripheral portion of the wafer CP through the wafer tool 411. The squeezing mechanism 431 can move in the lead direction at the center of the front end surface of the top body 413, and has: a squeezing part 431a that faces the lead vertically upward to squeeze the center of the wafer CP, and a squeezing driving part 431b that drives the squeezing part 431a. In addition, the top body 413 also has an adsorption part (not shown) for fixing the wafer tool 411 on the top body 413 by vacuum adsorption. When the extrusion drive part 431b moves the extrusion part 431a to the upper side of the lead while the wafer tool 411 holds the peripheral part of the wafer CP, the central part of the wafer CP is extruded to the upper side of the lead (in the +Z direction), and the central part of the wafer CP is bent to the upper side of the lead more than the peripheral part. The wafer tool 411 has a through hole 411a formed at a position corresponding to the holding mechanism 440 of the top body 413, a through hole 411b into which the extrusion part 431a is inserted, and a through hole 411c into which the wafer support part 432a is inserted.
晶片支持部432a係具有例如插銷狀之形狀，設置在頭頂部33H之前端部而呈自由地移動於鉛直方向之元件支持部。晶片支持部432a係支持成為相反於晶片CP之接合面CPf側之相反側之第1部位之中央部。晶片支持部432a係例如圖3（B）所示，設置4個而圍繞擠壓部431a。The chip support part 432a is a component support part that has a pin-like shape, for example, and is provided at the front end of the head top part 33H and is freely movable in the vertical direction. The chip support part 432a supports the central part of the first part that is opposite to the bonding surface CPf side of the chip CP. For example, as shown in FIG. 3 (B), four chip support parts 432a are provided to surround the extrusion part 431a.
支持部驅動部432b係驅動晶片支持部432a至鉛直方向。支持部驅動部432b係保持晶片CP之第1晶片保持部512來位處於移載位置Pos1，以藉由晶片支持部432a而支持晶片CP之中央部之狀態，來移動晶片支持部432a至比起第1晶片保持部512還更加上方之鉛直上方側。藉此而由第1晶片搬送部51之第1晶片保持部512開始至頭頂部33H，來移載晶片CP。The support driving part 432b drives the wafer support part 432a in the vertical direction. The support driving part 432b holds the first
回復到圖1，頭頂驅動部36係驅動構裝結合部33至Z軸方向（參考圖1之箭號AR11），同時，在沿著Z軸方向之旋轉軸之周圍，來旋轉及驅動構裝結合部33（參考圖1之箭號AR12）。頭頂驅動部36係藉著移動保持由第1晶片搬送部51所接受之晶片CP之頭頂部33H至鉛直上方（＋Z方向），而使得頭頂部33H接近於台座31，在基板WT之安裝面WTf，來安裝晶片CP。在此，基板WT之安裝面WTf和晶片CP之接合面CPf係正如前面之敘述，藉由施行電漿處理而進行親水化。藉此而以在基板WT之安裝面WTf，接觸晶片CP之接合面CPf，使得晶片CP，在基板WT，進行所謂親水化接合。Returning to FIG. 1 , the top driving unit 36 drives the assembly coupling unit 33 in the Z-axis direction (refer to arrow AR11 in FIG. 1 ), and at the same time, rotates and drives the assembly coupling unit 33 around the rotation axis along the Z-axis direction (refer to arrow AR12 in FIG. 1 ). The top driving unit 36 moves the top unit 33H holding the chip CP received by the first
台座31係以安裝基板WT之晶片CP之安裝面WTf來朝向鉛直下方（－Z方向）之姿勢而保持基板WT之基板保持部。台座31係藉由台座驅動部32而驅動至X方向和Y方向（參考圖1之箭號AR13）。可以藉此而改變構裝結合部33和台座31之間之相對位置關係，可以調整基板WT上之各個晶片CP之安裝位置。The pedestal 31 is a substrate holding part that holds the substrate WT with the mounting surface WTf of the chip CP mounted on the substrate WT facing directly downward (-Z direction). The pedestal 31 is driven in the X direction and the Y direction by the pedestal driving part 32 (refer to the arrow AR13 in Figure 1). The relative position relationship between the assembly coupling part 33 and the pedestal 31 can be changed by this, and the mounting position of each chip CP on the substrate WT can be adjusted.
控制部90係具有例如MPU（Micro Processing Unit：微處理單元）、主記憶部、輔助記憶部、介面以及連接各部分之匯流排，來控制構裝結合裝置30之頭頂驅動部36、台座驅動部32、保持機構440和擠壓機構431、晶片供應裝置10之晶片供應部11以及第1晶片搬送部51。控制部90之MPU係藉由將輔助記憶部所記憶之程式，讀入至主記憶部，執行程式，透過介面，而分別輸出控制用訊號至頭頂驅動部36、台座驅動部32、保持機構440、擠壓機構431、晶片供應部11以及第1晶片搬送部51之各個。The control unit 90 has, for example, an MPU (Micro Processing Unit), a main memory unit, an auxiliary memory unit, an interface, and a bus connecting various parts to control the overhead driving unit 36, the pedestal driving unit 32, the holding mechanism 440 and the squeezing mechanism 431 of the assembly and combination device 30, the chip supply unit 11 of the chip supply device 10, and the first
接著，關於本實施形態之晶片安裝系統1之動作，參考圖4乃至圖7，同時，進行說明。首先，在晶片安裝系統1，正如圖4（A）之箭號AR31所示，藉著移動檢取機構111至鉛直上方，而由相反於薄片TE之複數個之晶片CP側之相反側開始，突出1個晶片CP，成為由薄片TE來脫離1個晶片CP之狀態。接著，第1晶片搬送部51係正如圖4（A）之箭號AR32所示，藉著檢取機構111而由突出至鉛直方向之晶片CP之側邊開始，接近於晶片CP。接著，成為在第1晶片保持部512之2個之腳片512a（參考圖2）之間來配置檢取機構111之針頭111a之狀態。Next, the operation of the wafer mounting system 1 of the present embodiment will be described with reference to FIGS. 4 to 7 . First, in the wafer mounting system 1 , as shown by the arrow AR31 in FIG. 4 (A), by moving the picking mechanism 111 to the vertically upward position, one wafer CP is protruded from the opposite side of the plurality of wafer CP sides opposite to the sheet TE, and a state is achieved in which one wafer CP is separated from the sheet TE. Next, as shown by the arrow AR32 in FIG. 4 (A), the first
接著，正如圖4（B）之箭號AR33所示，在檢取機構111朝向至鉛直下方而移動至待機位置為止之時，正如圖4（B）所示，成為在第1晶片保持部512來保持晶片CP之狀態。然後，第1晶片搬送部51係正如圖5（A）之箭號AR34所示，移動第1晶片保持部512至移載晶片CP至頭頂部33H之移載位置Pos1為止。接著，在第1晶片保持部512移動至移載位置Pos1之後，頭頂驅動部36係正如圖5（A）之箭號AR35所示，移動構裝結合部33至鉛直上方而使得頭頂部33H接近於第1晶片保持部512。Next, as shown by arrow AR33 in FIG. 4 (B), when the picking mechanism 111 moves to the vertically downward position and reaches the standby position, as shown in FIG. 4 (B), the first
接著，支持部驅動部432b係正如圖5（B）之箭號AR36所示，移動晶片支持部432a至鉛直上方。藉此而使得保持於第1晶片保持部512之晶片CP，以支持於晶片支持部432a之上端部之狀態，來配置在比起第1晶片保持部512還更加上方之鉛直上方側。接著，第1晶片搬送部51係正如圖6（A）之箭號AR37所示，移動第1晶片保持部512至晶片CP之側邊。然後，支持部驅動部432b係正如圖6（B）之箭號AR38所示，移動晶片支持部432a至鉛直下方。接著，保持機構440係使得晶片CP之周圍部，吸附於晶片工具411。藉此而成為在頭頂部33H之前端部來保持晶片CP之狀態。像這樣，在晶片CP移載於頭頂部33H之前端部之後，晶片CP係即使是在成為相反於其接合面CPf側之相反側之第1部位之中央部以外之部位，也成為保持於頭頂部33H之狀態。Next, the support driving part 432b moves the chip support part 432a to the directly above position as shown by the arrow AR36 in FIG. 5 (B). As a result, the chip CP held by the first
接著，晶片安裝系統1係藉由驅動台座31同時旋轉構裝結合部33，而執行修正晶片CP和基板WT之間之相對位置偏離之對準定位。接著，晶片安裝系統1係藉由上升頭頂部33H而在基板WT來安裝晶片CP。此時，構裝結合裝置30係正如參考圖7之箭號AR41所示，以藉由保持機構440而在晶片工具411吸附晶片CP之周圍部來進行保持之狀態，正如圖7之箭號AR42所示，藉由驅動擠壓部431a至鉛直上方，而擠壓晶片CP之中央部。藉此而使得晶片CP，正如圖7之箭號AR43所示，成為其中央部比起其周圍部還更加地進行彎曲而突出至基板WT之安裝面WTf側之狀態。接著，頭頂驅動部36係正如圖7所示，藉由以彎曲晶片CP之狀態，使得頭頂部33H接近於基板WT，而使得晶片CP之中央部，接觸到基板WT之安裝面WTf。然後，構裝結合裝置30係藉由擠壓部431a沒入至鉛直下方，並且，頭頂部33H還更加地接近於基板WT，而擴大基板WT和晶片CP之間之接觸面積。接著，頭頂驅動部36係藉由頭頂部33H接近於基板WT之安裝面WTf，而在晶片CP之周圍部來接觸到基板WT之安裝面之後，藉由朝向至基板W側，來擠壓頭頂部33H，而使得晶片CP之接合面CPf整體，接合在基板WT之安裝面WTf。此外，構裝結合裝置30係可以在移動頭頂部33H至鉛直方向而接近於基板WT直到預先設定之距離為止之後，藉由彎曲晶片CP而使得晶片CP之中央部，來接觸到基板WT之安裝面WTf。也在該狀態下，然後，構裝結合裝置30係可以藉由沒入擠壓部431a至鉛直下方並且還使得頭頂部33H更加地接近於基板WT，而在擴大基板WT和晶片CP之間之接觸面積並且使得晶片CP之周圍部接觸到基板WT之安裝面之後，藉由朝向至基板WT側，來擠壓頭頂部33H，而使得晶片CP之接合面CPf整體，接合在基板WT之安裝面WTf。可以藉此而由晶片CP之接合面CPf之中央部開始，進行接合，來抑制起因在對於大氣中之基板WT和晶片CP之間之空氣捲入而造成之空隙之發生。Next, the chip mounting system 1 performs alignment positioning to correct the relative position deviation between the chip CP and the substrate WT by driving the stage 31 and rotating the assembly coupling part 33 at the same time. Next, the chip mounting system 1 mounts the chip CP on the substrate WT by raising the head top part 33H. At this time, the assembly coupling device 30 is in a state of holding the peripheral part of the chip CP by adsorbing the peripheral part of the chip CP on the chip tool 411 by the holding mechanism 440 as shown by the arrow AR41 of the reference FIG. 7, and as shown by the arrow AR42 of FIG. 7, the squeezing part 431a is driven to the vertically upward to squeeze the central part of the chip CP. As a result, the chip CP is in a state where its central part is bent more than its peripheral part and protrudes to the mounting surface WTf side of the substrate WT as shown by the arrow AR43 of FIG. 7. Next, the top driving part 36 is as shown in Fig. 7, by bending the chip CP, making the top part 33H close to the substrate WT, so that the central part of the chip CP contacts the mounting surface WTf of the substrate WT. Then, the assembly bonding device 30 is sunk to the bottom of the lead by the squeezing part 431a, and the top part 33H is further close to the substrate WT, thereby expanding the contact area between the substrate WT and the chip CP. Next, the top driving part 36 approaches the mounting surface WTf of the substrate WT through the top part 33H, and after the peripheral part of the chip CP contacts the mounting surface of the substrate WT, the top part 33H is pressed toward the side of the substrate W, so that the bonding surface CPf of the chip CP is entirely bonded to the mounting surface WTf of the substrate WT. In addition, the assembly bonding device 30 can bend the chip CP so that the central part of the chip CP contacts the mounting surface WTf of the substrate WT after moving the top part 33H to the vertical direction and approaching the substrate WT until a preset distance. Also in this state, the assembly bonding device 30 can then be made to engage the entire bonding surface CPf of the chip CP to the mounting surface WTf of the substrate WT by sinking the squeezing portion 431a to directly below the lead and bringing the top portion 33H closer to the substrate WT, thereby expanding the contact area between the substrate WT and the chip CP and making the peripheral portion of the chip CP contact the mounting surface of the substrate WT, and then squeezing the top portion 33H toward the side of the substrate WT. In this way, bonding can be performed starting from the central portion of the bonding surface CPf of the chip CP, thereby suppressing the occurrence of gaps caused by the air drawn in between the substrate WT and the chip CP in the atmosphere.
正如以上之說明，如果是藉由本實施形態之晶片安裝系統1的話，則藉由保持相反於供應之晶片CP之接合面CPf側之相反側之周圍部之第1晶片保持部512，以保持晶片CP之狀態，而搬送晶片CP至移載位置Pos1為止。可以藉此而無接觸晶片CP之接合面CPf，來搬送晶片CP，因此，抑制異物對於晶片CP之接合面CPf之附著以及晶片CP之接合面CPf之損傷。此外，第1晶片搬送部51係以晶片CP之接合面CPf朝向至鉛直下方之狀態，來搬送晶片CP，因此，抑制在晶片CP之接合面CPf來載持異物（例如微粒）。所以，抑制晶片CP和基板WT之間之接合不良之發生。As described above, if the chip mounting system 1 of this embodiment is used, the first
但是，在進行所謂透過凸塊而將晶片CP接合於基板WT之凸塊接合之狀態下，可以對於形成晶片CP之凸塊之面側之凸塊以外之部分，來進行操縱處理。相對於此，在晶片CP之接合面CPf來施行親水化處理之後，在進行所謂藉由使得晶片CP之接合面CPf來接觸到基板WT之安裝面WTf而使得晶片CP接合於基板WT之親水化接合之狀態下，無法對於晶片CP之接合面CPf側，來進行操縱處理。相對於此，在本實施形態之晶片安裝系統1，正如前面之敘述，可以無接觸晶片CP之接合面CPf，來搬送晶片CP，因此，有利於藉由所謂親水化接合而接合晶片CP至基板WT之狀態。However, in the state of so-called bump bonding in which the chip CP is bonded to the substrate WT through the bump, the portion other than the bump on the side of the bump forming the chip CP can be manipulated. In contrast, after the hydrophilization treatment is performed on the bonding surface CPf of the chip CP, in the state of so-called hydrophilization bonding in which the chip CP is bonded to the substrate WT by making the bonding surface CPf of the chip CP contact the mounting surface WTf of the substrate WT, the bonding surface CPf side of the chip CP cannot be manipulated. In contrast, in the chip mounting system 1 of the present embodiment, as described above, the chip CP can be transported without contacting the bonding surface CPf of the chip CP, and therefore, it is advantageous to bond the chip CP to the substrate WT by the so-called hydrophilization bonding.
此外，本實施形態之第1晶片搬送部51係具有覆蓋保持於第1晶片保持部512之晶片CP之接合面CPf側之晶片蓋體513。藉此來抑制因為在第1晶片搬送部51所造成之晶片CP之搬送中而形成之晶片CP之接合面CPf之異物附著，所以，抑制晶片CP和基板WT之間之接合不良之發生。本實施形態之蓋體114係進行配置而覆蓋複數個之晶片CP之鉛直上方。因此，抑制對於保持在薄片TE之複數個之晶片CP各個之接合面CPf之微粒附著。In addition, the first
此外，如果是藉由本實施形態之晶片安裝系統1的話，則薄片保持框112和框保持部119係以接合面CPf朝向鉛直上方側之姿勢，來保持貼合在相反於複數個之晶片CP各個之接合面CPf側之相反側之薄片TE。藉此而使得晶片供應部11，不需要反轉晶片CP之接合面CPf之方向之機構，因此，像這樣，具有所謂簡化晶片供應部11之構造之優點。Furthermore, in the case of the wafer mounting system 1 of the present embodiment, the wafer holding frame 112 and the frame holding portion 119 hold the wafer TE attached to the side opposite to the bonding surface CPf of each of the plurality of wafers CP with the bonding surface CPf facing upward. This eliminates the need for a mechanism for reversing the direction of the bonding surface CPf of the wafer CP in the wafer supply portion 11, thereby simplifying the structure of the wafer supply portion 11.
此外，本實施形態之頭頂部33H係具有：藉由擠壓晶片CP之中央部而彎曲晶片CP，使得晶片CP之接合面CPf之中央部，比起接合面CPf之周圍部，還更加地突出於基板WT之安裝面WTf側的擠壓機構431。藉此而抑制空氣對於晶片CP和基板WT之間之捲入，因此，可以使得晶片CP呈良好地接合於基板WT。In addition, the head top portion 33H of this embodiment has a squeezing mechanism 431 that bends the chip CP by squeezing the central portion of the chip CP so that the central portion of the bonding surface CPf of the chip CP protrudes further from the mounting surface WTf side of the substrate WT than the peripheral portion of the bonding surface CPf. This suppresses the entrapment of air between the chip CP and the substrate WT, so that the chip CP can be well bonded to the substrate WT.
此外，在本實施形態之晶片供應部11，作為保持晶片CP之薄片TE係可以採用黏著薄片。在該狀態下，即使是在薄片TE來施加外力之狀態下，也使得晶片CP，不容易對於薄片TE呈相對地移動，因此，抑制保持在薄片TE之相鄰接之晶片CP間之接觸。因此，具有所謂抑制在薄片TE來施加外力之狀態下之晶片CP之損傷以及來自晶片CP之微粒之發生之優點。In addition, in the wafer supply unit 11 of the present embodiment, an adhesive sheet can be used as the sheet TE for holding the wafer CP. In this state, even when the sheet TE applies an external force, the wafer CP is not easily moved relative to the sheet TE, thereby suppressing the contact between the adjacent wafers CP held by the sheet TE. Therefore, there is an advantage of suppressing the damage to the wafer CP when the sheet TE applies an external force and the generation of particles from the wafer CP.
此外，如果是藉由本實施形態之晶片安裝系統1的話，則台座31係以安裝基板WT之晶片CP之安裝面來朝向鉛直下方之姿勢，而保持基板WT。可以藉此而減低微粒對於基板WT之安裝面之附著，因此，可以抑制晶片CP和基板WT之間之接合不良之發生。 （實施形態2）In addition, if the chip mounting system 1 of this embodiment is used, the base 31 holds the substrate WT with the mounting surface of the chip CP mounted on the substrate WT facing directly downward. This can reduce the adhesion of particles to the mounting surface of the substrate WT, thereby suppressing the occurrence of poor bonding between the chip CP and the substrate WT. (Embodiment 2)
本實施形態之晶片安裝系統2係在晶片供應部，以接合面CPf朝向成為第2方向之鉛直下方側之姿勢，來保持貼合在相反於複數個之晶片CP各個之接合面CPf側之相反側之薄片TE之方面，不同於實施形態1。The chip mounting system 2 of this embodiment is different from the embodiment 1 in that, in the chip supply part, the bonding surface CPf is oriented toward the directly lower side of the lead in the second direction to maintain the thin film TE bonded to the opposite side of the bonding surface CPf of each of the plurality of chips CP.
正如圖8所示，本實施形態之晶片安裝系統2係具備晶片供應裝置2010、構裝結合裝置30和控制部2090。此外，在圖8，關於相同於實施形態1之同樣之構造，附加相同於圖1之相同之符號。晶片供應裝置2010係具有晶片供應部2011和第1晶片搬送部51。晶片供應部2011係具有：保持薄片保持框112之框保持部119、由複數個之晶片CP之中而檢取1個之晶片CP之檢取機構2111、第2晶片搬送部2114和反轉部2115。此外，晶片供應部2011係具有：驅動薄片保持框112至旋轉於XY方向或Z軸周圍之方向之保持框驅動部113。框保持部119係以貼合薄片TE之複數個之晶片CP之面來成為鉛直下方（－Z方向）側之姿勢，而保持薄片保持框112。構成為由薄片保持框112和框保持部119開始，以接合面CPf朝向成為第2方向側之鉛直下方側之姿勢，來保持貼合在相反於複數個之晶片CP各個之接合面CPf側之相反側之薄片TE的薄片保持部。As shown in FIG8, the wafer mounting system 2 of the present embodiment comprises a wafer supply device 2010, a mounting and combining device 30, and a control unit 2090. In FIG8, the same symbols as those in FIG1 are attached to the same structures as those in the embodiment 1. The wafer supply device 2010 comprises a wafer supply unit 2011 and a first
檢取機構2111係具有針頭2111a，正如圖8之箭號AR15所示，可以移動於鉛直方向。針頭2111a係例如存在4個。但是，針頭2111a之數目係可以是3個，並且，也可以是5個以上。檢取機構2111係藉著由薄片TE之鉛直上方（＋Z方向）開始，使得針頭2111a突刺於薄片TE，切出（突出）晶片CP至鉛直下方（－Z方向），而供應晶片CP。接著，貼合於薄片TE之各個晶片CP係藉由針頭2111a而擠出至鉛直下方，交接至第2晶片搬送部2114。The picking mechanism 2111 has a needle 2111a, which can be moved in the lead direction as shown by the arrow AR15 in FIG8 . There are, for example, four needles 2111a. However, the number of needles 2111a can be three, and can also be five or more. The picking mechanism 2111 starts from the directly above the sheet TE (+Z direction) so that the needle 2111a pierces the sheet TE, cuts out (protrudes) the chip CP to the directly below the lead (-Z direction), and supplies the chip CP. Then, each chip CP attached to the sheet TE is squeezed out to the directly below the lead by the needle 2111a and handed over to the second chip conveying unit 2114.
第2晶片搬送部2114係具有：第2晶片保持部2114a、導軌2114c、以及固定第2晶片保持部2114a而滑動於導軌2114c之上之滑動體2114b的第2元件搬送部。第2晶片保持部2114a係成為以非接觸狀態，在其接合面CPf，來保持由於檢取機構2111而突出之1個之晶片CP之伯努利（Bernoulli）夾頭之第2元件保持部。伯努利（Bernoulli）夾頭係以藉由在內部產生負壓同時流出氣體至外部而在夾頭和晶片CP之間來形成氣體層之狀態，藉由非接觸而保持晶片CP。此外，第2晶片搬送部2114係正如圖8之箭號AR2016所示，具有用以沿著導軌2114c而移動滑動體2114b之滑動體驅動部（無圖示）。第2晶片搬送部2114係以第2晶片保持部2114a來保持晶片CP之狀態，而搬送第2晶片保持部2114a至第1晶片搬送部51之接受位置Pos2為止。The second chip conveying unit 2114 is a second component conveying unit having a second chip holding unit 2114a, a guide rail 2114c, and a slider 2114b that fixes the second chip holding unit 2114a and slides on the guide rail 2114c. The second chip holding unit 2114a is a second component holding unit of a Bernoulli chuck that holds a chip CP protruding from the pickup mechanism 2111 at its joint surface CPf in a non-contact state. The Bernoulli chuck holds the chip CP in a non-contact state by forming a gas layer between the chuck and the chip CP by generating negative pressure inside and simultaneously flowing gas to the outside. In addition, the second wafer conveying unit 2114 has a slider driving unit (not shown) for moving the slider 2114b along the guide rail 2114c as shown by the arrow AR2016 in FIG8. The second wafer conveying unit 2114 holds the wafer CP by the second wafer holding unit 2114a and conveys the second wafer holding unit 2114a to the receiving position Pos2 of the first
反轉部2115係保持相反於保持在第2晶片保持部2114a之晶片CP之接合面CPf側之相反側，進行反轉而成為接合面CPf朝向鉛直上方之姿勢。反轉部2115係具有：吸附頭頂部2115a、吸附頭頂部2115a固定於前端部之臂件2115b、以及旋轉臂件2115b或者是移動至鉛直方向之臂件驅動部2115c。此外，反轉部2115係例如圖9所示，具有：晶片支持部2115g、支持部驅動部2115i、以及用以吸附及保持晶片CP之吸附部2115e。在對應於吸附頭頂部2115a之各個之晶片支持部2115g之部分，設置晶片支持部2115g插通於內側之貫通孔2115f。各個之晶片支持部2115g係具有例如插銷狀之形狀而可自由地移動於鉛直方向。晶片支持部2115g係例如存在4個。但是，晶片支持部2115g之數目係可以是3個，並且，也可以是5個以上。支持部驅動部2115i係驅動晶片支持部2115g至鉛直方向。The reversing part 2115 holds the side opposite to the bonding surface CPf side of the chip CP held by the second chip holding part 2114a, and reverses it to a posture in which the bonding surface CPf faces vertically upward. The reversing part 2115 includes: a suction head top part 2115a, an arm 2115b fixed to the front end of the suction head top part 2115a, and an arm driving part 2115c that rotates the arm 2115b or moves it to the vertical direction. In addition, the reversing part 2115 is, for example, as shown in FIG. 9, and includes: a chip support part 2115g, a support part driving part 2115i, and a suction part 2115e for adsorbing and holding the chip CP. In the portion of each chip support part 2115g corresponding to the top part 2115a of the suction head, a through hole 2115f is provided through which the chip support part 2115g is inserted on the inner side. Each chip support part 2115g has a shape such as a pin and can be freely moved in the vertical direction. There are, for example, four chip support parts 2115g. However, the number of chip support parts 2115g can be three, and can also be five or more. The support part driving part 2115i drives the chip support part 2115g to the vertical direction.
第1晶片搬送部51係由晶片供應部2011開始，將在接受位置Pos2所供應之晶片CP，搬送至在頭頂部33H來移載晶片CP之移載位置Pos1為止。控制部2090係相同於實施形態1所說明之控制部90，控制晶片供應裝置2010之晶片供應部2011和第1晶片搬送部51。The first
接著，關於本實施形態之晶片安裝系統2之動作，參考圖10乃至圖12，同時，進行說明。首先，在晶片安裝系統2，正如圖10（A）之箭號AR51所示，藉著檢取機構2111移動至鉛直下方，而由相反於薄片TE之複數個之晶片CP側之相反側開始，突出1個之晶片CP，由薄片TE開始脫離1個之晶片CP，交接至第2晶片搬送部2114。此時，第2晶片搬送部2114係以非接觸狀態，在接合面CPf，來保持藉由第2晶片保持部2114a而交接之晶片CP。Next, the operation of the wafer mounting system 2 of this embodiment will be described with reference to FIG. 10 to FIG. 12. First, in the wafer mounting system 2, as shown by the arrow AR51 in FIG. 10 (A), the picking mechanism 2111 moves to the bottom, and one wafer CP is protruded from the opposite side of the plurality of wafer CP sides opposite to the sheet TE, and one wafer CP is separated from the sheet TE and transferred to the second wafer conveying unit 2114. At this time, the second wafer conveying unit 2114 holds the wafer CP transferred by the second wafer holding unit 2114a at the joint surface CPf in a non-contact state.
接著，第2晶片搬送部2114係正如圖10（B）之箭號AR52所示，搬送保持晶片CP之第2晶片保持部2114a，至在鉛直方向而對向於反轉部2115之位置為止。接著，在搬送第2晶片保持部2114a至對向於反轉部2115之位置為止之時，反轉部2115之臂件驅動部2115c係正如圖10（B）之箭號AR53所示，移動臂件2115b至鉛直下方。接著，吸附頭頂部2115a係對於相反於保持在第2晶片保持部2114a之晶片CP之接合面CPf側之相反側，進行吸附及保持。Next, the second wafer conveying unit 2114 conveys the second wafer holding unit 2114a holding the wafer CP to a position opposite to the reversing unit 2115 in the vertical direction as indicated by the arrow AR52 in FIG. 10 (B). Next, when the second wafer holding unit 2114a is conveyed to a position opposite to the reversing unit 2115, the arm driving unit 2115c of the reversing unit 2115 moves the arm 2115b to a position below the vertical direction as indicated by the arrow AR53 in FIG. 10 (B). Next, the suction head top unit 2115a suctions and holds the wafer CP held by the second wafer holding unit 2114a on the opposite side to the bonding surface CPf side.
然後，在藉由吸附頭頂部2115a而吸附及保持晶片CP之狀態下，臂件驅動部2115c係移動臂件2115b至鉛直上方。接著，臂件驅動部2115c係正如圖11（A）之箭號AR54所示，旋轉臂件2115b。藉此而使得反轉部2115，成為以其接合面CPf朝向鉛直上方之姿勢而保持晶片CP之狀態。接著，反轉部2115係停止藉由吸附頭頂部2115a而造成之晶片CP之吸附。然後，正如圖11（B）之箭號AR55所示，支持部驅動部2115i係藉由移動晶片支持部2115g至鉛直上方，而使得晶片CP，由吸附頭頂部2115a開始突出至鉛直上方。接著，第1晶片搬送部51係正如圖11（B）之箭號AR56所示，由藉著晶片支持部2115g而突出至鉛直上方之晶片CP之側邊開始，接近於晶片CP。接著，成為在第1晶片保持部512之2個之腳片512a（參考圖2）之間而配置晶片支持部2115g之狀態。Then, in the state where the chip CP is adsorbed and held by the suction head top 2115a, the arm driving part 2115c moves the arm 2115b to the vertical position. Then, the arm driving part 2115c rotates the arm 2115b as indicated by the arrow AR54 in FIG. 11 (A). This causes the reversing part 2115 to be in a state where the chip CP is held with its bonding surface CPf facing vertically upward. Then, the reversing part 2115 stops the adsorption of the chip CP by the suction head top 2115a. Then, as indicated by the arrow AR55 in FIG. 11 (B), the support part driving part 2115i moves the chip support part 2115g to the vertical position, so that the chip CP begins to protrude from the suction head top 2115a to the vertical position. Next, the first
接著，在支持部驅動部2115i朝向至鉛直下方而移動晶片支持部2115g至待機位置為止之時，正如圖12（A）所示，成為在第1晶片保持部512來保持晶片CP之狀態。然後，第1晶片搬送部51係正如圖12（B）之箭號AR57所示，移動第1晶片保持部512至移載晶片CP至頭頂部33H之移載位置Pos1為止。以後之晶片安裝系統2之動作係相同於實施形態1。Next, when the support driving part 2115i is directed to the vertically downward direction and the wafer support part 2115g is moved to the standby position, as shown in FIG. 12 (A), the wafer CP is held by the first
正如以上之說明，如果是藉由本實施形態之晶片安裝系統2的話，則相同於實施形態1之晶片安裝系統1，可以無接觸晶片CP之接合面CPf，來搬送晶片CP，因此，抑制異物對於晶片CP之接合面CPf之附著以及晶片CP之接合面CPf之損傷。此外，第1晶片搬送部51係以晶片CP之接合面CPf朝向至鉛直下方之狀態，來搬送晶片CP，因此，抑制在晶片CP之接合面CPf來載持異物。所以，抑制晶片CP和基板WT之間之接合不良之發生。此外，如果是藉由本實施形態之晶片安裝系統2的話，則薄片保持框112和框保持部119係以接合面CPf朝向鉛直下方側之姿勢，來保持貼合在相反於複數個之晶片CP各個之接合面CPf側之相反側之薄片TE。藉此而在複數個之晶片CP保持於薄片TE之狀態下，抑制異物對於晶片CP之接合面CPf之附著，因此，抑制晶片CP和基板WT之間之接合不良之發生。
（實施形態3）As described above, if the wafer mounting system 2 of this embodiment is used, the wafer CP can be transported without contacting the bonding surface CPf of the wafer CP, similar to the wafer mounting system 1 of the embodiment 1, thereby suppressing the adhesion of foreign matter to the bonding surface CPf of the wafer CP and the damage to the bonding surface CPf of the wafer CP. In addition, the first
本實施形態之晶片安裝系統3係在晶片供應部，以晶片CP之接合面CPf朝向鉛直上方側之姿勢，來保持貼合複數個之晶片CP各個之接合面CPf側之薄片TE之方面，不同於實施形態1。The chip mounting system 3 of this embodiment is different from the embodiment 1 in that, in the chip supply part, the bonding surface CPf of the chip CP is oriented toward the vertically upward side to hold the thin film TE on the bonding surface CPf side of each of the multiple chips CP.
正如圖13所示，本實施形態之晶片安裝系統3係具備晶片供應裝置3010、構裝結合裝置3030和控制部3090。此外，在圖13，關於相同於實施形態1及實施形態2之同樣之構造，附加相同於圖1和圖8之相同之符號。晶片供應裝置3010係具有晶片供應部3011和第1晶片搬送部51。晶片供應部3011係具有：保持薄片保持框112之框保持部119、由複數個之晶片CP之中而檢取1個之晶片CP之檢取機構3111、以及第3晶片搬送部3114。此外，晶片供應部3011係具有：驅動薄片保持框112至旋轉於XY方向或Z軸周圍之方向之保持框驅動部113。框保持部119係以貼合薄片TE之複數個之晶片CP之面來成為鉛直下方（－Z方向）側之姿勢，而保持薄片保持框112。構成為由薄片保持框112和框保持部119開始，以晶片CP之接合面CPf朝向成為第1方向側之鉛直上方側之姿勢，來保持貼合複數個之晶片CP各個之接合面CPf側之薄片TE的薄片保持部。此外，在薄片TE為黏著薄片之狀態下，作為黏著薄片係最好是在由黏著薄片來剝離晶片CP之際，在貼合於晶片CP之黏著薄片之部分無殘留不純物之黏著薄片。As shown in FIG. 13 , the wafer mounting system 3 of the present embodiment includes a wafer supply device 3010, a mounting and combining device 3030, and a control unit 3090. In FIG. 13 , the same symbols as those in FIG. 1 and FIG. 8 are attached to the same structures as those in the embodiments 1 and 2. The wafer supply device 3010 includes a wafer supply unit 3011 and a first
檢取機構3111係具有針頭3111a，正如圖13之箭號AR3015所示，可以移動於鉛直方向。檢取機構3111係藉著由薄片TE之鉛直上方（＋Z方向）開始，使得針頭3111a突出於鉛直下方（－Z方向），擠壓晶片CP至鉛直下方（－Z方向），而供應晶片CP。接著，貼合於薄片TE之各個晶片CP係藉由針頭3111a而每個別地突出至下方，交接至第3晶片搬送部3114。The picking mechanism 3111 has a needle 3111a, which can move in the lead direction as shown by the arrow AR3015 in FIG. 13. The picking mechanism 3111 starts from the lead upper side (+Z direction) of the sheet TE, and makes the needle 3111a protrude from the lead lower side (-Z direction), thereby squeezing the wafer CP to the lead lower side (-Z direction), thereby supplying the wafer CP. Then, each wafer CP attached to the sheet TE is protruded downward individually by the needle 3111a, and is transferred to the third wafer conveying unit 3114.
第3晶片搬送部3114係具有：第3晶片保持部3114a、臂件3114b、導軌3114d、以及呈自由旋轉地支持臂件3114b而滑動於導軌3114d之上之滑動體3114c的第3元件搬送部。第3晶片保持部3114a係設置在臂件3114b之某一端部，吸附及保持藉由檢取機構3111而突出之1個之晶片CP以及相反於其接合面CPf側之相反側的第3元件保持部。第3晶片保持部3114a和臂件3114b係正如圖14所示，具有：晶片支持部3114g、支持部驅動部3114i、以及用以吸附及保持晶片CP之吸附部3114e。在第3晶片保持部3114a，設置晶片支持部3114g插通於內側之貫通孔3114f。晶片支持部3114g係具有例如插銷狀之形狀而可自由地移動於鉛直方向。晶片支持部3114g係例如存在4個。但是，晶片支持部3114g之數目係可以是3個，並且，也可以是5個以上。支持部驅動部3114i係驅動晶片支持部3114g至鉛直方向。滑動體3114c係具有：以臂件3114b之其他端部，來作為基點而旋轉設置臂件3114b之第3晶片保持部3114a之某一端部的臂件驅動部（無圖示）。此外，第3晶片搬送部3114係正如圖13之箭號AR3016所示，具有用以沿著導軌3114d而移動滑動體3114c之滑動體驅動部（無圖示）。第3晶片搬送部3114係以第3晶片保持部3114a來保持晶片CP之狀態，移動第3晶片保持部3114a至第1晶片搬送部51之接受位置Pos2為止。The third chip conveying unit 3114 is a third component conveying unit having a third chip holding unit 3114a, an arm 3114b, a guide rail 3114d, and a sliding body 3114c that supports the arm 3114b in a freely rotatable manner and slides on the guide rail 3114d. The third chip holding unit 3114a is provided at one end of the arm 3114b, and adsorbs and holds a chip CP protruding from the pickup mechanism 3111 and the third component holding unit on the opposite side to the bonding surface CPf thereof. As shown in FIG. 14 , the third chip holding unit 3114a and the arm 3114b have a chip supporting unit 3114g, a supporting unit driving unit 3114i, and an adsorption unit 3114e for adsorbing and holding the chip CP. In the third chip holding portion 3114a, a chip supporting portion 3114g is provided through a through hole 3114f inserted into the inner side. The chip supporting portion 3114g has a shape such as a pin and can be freely moved in a vertical direction. There are, for example, four chip supporting portions 3114g. However, the number of chip supporting portions 3114g can be three, and can also be five or more. The supporting portion driving portion 3114i drives the chip supporting portion 3114g to the vertical direction. The sliding body 3114c has an arm driving portion (not shown) that rotates a certain end of the third chip holding portion 3114a on which the arm 3114b is provided, with the other end of the arm 3114b as a base point. In addition, the third wafer conveying unit 3114 has a slider driving unit (not shown) for moving the slider 3114c along the guide rail 3114d as shown by the arrow AR3016 in FIG. 13. The third wafer conveying unit 3114 holds the wafer CP with the third wafer holding unit 3114a and moves the third wafer holding unit 3114a to the receiving position Pos2 of the first
第1晶片搬送部51係由晶片供應部3011開始，將在接受位置Pos2所供應之晶片CP，搬送至在頭頂部33H來移載晶片CP之移載位置Pos1為止。控制部3090係相同於實施形態1所說明之控制部90，控制晶片供應裝置3010之晶片供應部3011和第1晶片搬送部51。The first
接著，關於本實施形態之晶片安裝系統3之動作，參考圖15乃至圖18，同時，進行說明。首先，在晶片安裝系統3，正如圖15（A）之箭號AR61所示，藉著檢取機構3111移動至鉛直下方，而由相反於薄片TE之複數個之晶片CP側之相反側開始，切出（突出）1個之晶片CP。此時，第3晶片搬送部3114之第3晶片保持部3114a係以吸附相反於突出之晶片CP之接合面CPf側之相反側之狀態，來吸附及保持晶片CP。接著，在檢取機構3111移動至待機位置之後，臂件3114b係正如圖15（A）之箭號AR62所示，藉著第3晶片保持部3114a，以吸附及保持晶片CP之狀態，而進行旋轉。Next, the operation of the wafer mounting system 3 of this embodiment will be described with reference to FIG. 15 to FIG. 18 . First, in the wafer mounting system 3, as shown by the arrow AR61 in FIG. 15 (A), the picking mechanism 3111 moves to the directly below, and starts from the opposite side of the plurality of wafer CP sides opposite to the sheet TE, and cuts out (protrudes) one wafer CP. At this time, the third wafer holding part 3114a of the third wafer conveying part 3114 adsorbs and holds the wafer CP in a state of adsorbing the opposite side of the bonding surface CPf side of the protruding wafer CP. Next, after the picking mechanism 3111 moves to the standby position, the arm 3114b rotates to absorb and hold the wafer CP via the third wafer holding portion 3114a as indicated by arrow AR62 in FIG. 15(A).
接著，第3晶片搬送部3114係正如圖15（B）之箭號AR63所示，移動保持晶片CP之第3晶片保持部3114a，至接受位置Pos2為止。接著，在搬送第3晶片保持部3114a至接受位置Pos2為止之時，臂件3114b係正如圖15（B）之箭號AR64所示，進行旋轉。Next, the third wafer transfer unit 3114 moves the third wafer holding unit 3114a holding the wafer CP to the receiving position Pos2 as indicated by the arrow AR63 in FIG. 15 (B). Next, when the third wafer holding unit 3114a is transferred to the receiving position Pos2, the arm 3114b rotates as indicated by the arrow AR64 in FIG. 15 (B).
然後，第3晶片搬送部3114係停止藉由第3晶片保持部3114a而造成之晶片CP之吸附。接著，正如圖16（A）之箭號AR65所示，支持部驅動部3114i係藉由移動晶片支持部3114g至鉛直上方，而使得晶片CP，突出於第3晶片保持部3114a之鉛直上方。接著，第1晶片搬送部51係正如圖16（A）之箭號AR66所示，由藉著晶片支持部3114g而突出至鉛直上方之晶片CP之側邊開始，接近於晶片CP。接著，成為在第1晶片保持部512之2個之腳片512a（參考圖2）之間而配置晶片支持部2115g之狀態。Then, the third wafer conveying unit 3114 stops the adsorption of the wafer CP by the third wafer holding unit 3114a. Then, as shown by arrow AR65 in FIG. 16 (A), the supporting unit driving unit 3114i moves the wafer supporting unit 3114g to the vertical position, so that the wafer CP protrudes vertically above the third wafer holding unit 3114a. Then, as shown by arrow AR66 in FIG. 16 (A), the first
然後，在支持部驅動部3114i朝向至鉛直下方而移動晶片支持部2115g至待機位置為止之時，正如圖16（B）所示，成為在第1晶片保持部512來保持晶片CP之狀態。然後，第1晶片搬送部51係正如圖17之箭號AR67所示，移動第1晶片保持部512至移載晶片CP至頭頂部33H之移載位置Pos1為止。以後之晶片安裝系統3之動作係相同於實施形態1。Then, when the support driving part 3114i faces directly downward and moves the wafer support part 2115g to the standby position, as shown in FIG. 16 (B), the wafer CP is held by the first
正如以上之說明，如果是藉由本實施形態之晶片安裝系統3的話，則相同於實施形態1之晶片安裝系統1，可以無接觸晶片CP之接合面CPf，來搬送晶片CP，因此，抑制異物對於晶片CP之接合面CPf之附著以及晶片CP之接合面CPf之損傷。此外，第1晶片搬送部51係以晶片CP之接合面CPf朝向至鉛直下方之狀態，來搬送晶片CP，因此，抑制在晶片CP之接合面CPf來載持異物。所以，抑制晶片CP和基板WT之間之接合不良之發生。此外，如果是藉由本實施形態之晶片安裝系統2的話，則薄片保持框112和框保持部119係以接合面CPf朝向鉛直上方側之姿勢，來保持貼合複數個之晶片CP各個之接合面CPf側之薄片TE。藉此而在複數個之晶片CP保持於薄片TE之狀態下，抑制異物對於晶片CP之接合面CPf之附著，因此，抑制晶片CP和基板WT之間之接合不良之發生。As described above, if the chip mounting system 3 of the present embodiment is used, the chip CP can be transported without contacting the bonding surface CPf of the chip CP, similar to the chip mounting system 1 of the embodiment 1, thereby suppressing the adhesion of foreign matter to the bonding surface CPf of the chip CP and the damage to the bonding surface CPf of the chip CP. In addition, the first
在以上，關於本發明之各個之實施形態而進行說明，但是，本發明係並非限定在前述實施形態之構造。例如圖18所示之晶片安裝系統4，晶片供應裝置4010之第1晶片搬送部4051係可以具有：成為以非接觸而保持由晶片供應部3011所供應之晶片CP之接合面CPf側之伯努利（Bernoulli）夾頭之第1晶片保持部4512。第1晶片搬送部4051係具有本體部4511和第1晶片保持部4512。第1晶片保持部4512係在其鉛直下方側，來保持晶片CP。此外，本體部4511係正如圖18之箭號AR74所示，在預先設定之待機位置和移載位置Pos1之間，移動第1晶片保持部4512。In the above, each embodiment of the present invention is described, but the present invention is not limited to the structure of the aforementioned embodiment. For example, in the chip mounting system 4 shown in FIG. 18, the first chip conveying part 4051 of the chip supply device 4010 may have a first chip holding part 4512 that serves as a Bernoulli chuck that holds the bonding surface CPf side of the chip CP supplied by the chip supply part 3011 in a non-contact manner. The first chip conveying part 4051 has a main body 4511 and a first chip holding part 4512. The first chip holding part 4512 holds the chip CP on its directly lower side. In addition, the main body 4511 moves the first chip holding part 4512 between the preset standby position and the transfer position Pos1 as shown by the arrow AR74 in FIG. 18.
本變化例之構裝結合裝置4030係具有：台座31、具有頭頂部4033H之構裝結合部4033、以及驅動頭頂部4033H之頭頂驅動部36。頭頂部4033H係例如圖19所示，具有：晶片工具4411和頭頂本體部4413。此外，在圖19，關於相同於實施形態1之同樣之構造，附加相同於圖3（A）之相同之符號。回復到圖18，控制部4090係相同於實施形態1所說明之控制部90，來控制構裝結合裝置4030之頭頂驅動部36、台座驅動部32、保持機構440、擠壓機構431、晶片供應裝置4010之晶片供應部11以及第1晶片搬送部4051。The assembly and combination device 4030 of this variation includes: a pedestal 31, an assembly and combination portion 4033 having a head portion 4033H, and a head portion driving portion 36 for driving the head portion 4033H. The head portion 4033H includes: a wafer tool 4411 and a head portion body 4413, as shown in FIG. 19. In FIG. 19, the same symbols as those in FIG. 3 (A) are attached to the same structures as those in the first embodiment. Returning to FIG. 18 , the control unit 4090 is the same as the control unit 90 described in the first embodiment, and controls the overhead driving unit 36 of the assembly and combining device 4030 , the pedestal driving unit 32 , the holding mechanism 440 , the squeezing mechanism 431 , the chip supply unit 11 of the chip supply device 4010 , and the first chip transport unit 4051 .
在本變化例之晶片安裝系統4，第1晶片搬送部4051係移動保持晶片CP之第1晶片保持部4512至移載晶片CP到達於頭頂部33H之移載位置Pos1為止。接著，頭頂驅動部36係移動構裝結合部4033至鉛直上方，使得頭頂部4033H，接近於保持在第1晶片保持部4512之晶片CP。接著，頭頂驅動部36係移動頭頂部4033H至鉛直上方而直到頭頂部4033H之前端部來接觸到相反於晶片CP之接合面CPf側之相反側之位置為止。接著，保持機構440係在晶片工具411，吸附晶片CP之周圍部。藉此而成為在頭頂部33H之前端部來保持晶片CP之狀態。以後之晶片安裝系統4之動作係相同於實施形態1。此外，在本變化例之晶片安裝系統4，並無決定保持在成為伯努利（Bernoulli）夾頭之第1晶片保持部4512之晶片CP之姿勢。因此，在本變化例之晶片安裝系統4，最好是具備：在晶片CP交接於頭頂部4033H之前而對準˙定位晶片CP之姿勢之對準定位機構（無圖示）。In the wafer mounting system 4 of this variation, the first wafer conveying unit 4051 moves the first wafer holding unit 4512 holding the wafer CP until the wafer CP is transferred to the transfer position Pos1 of the head top unit 33H. Then, the head top driving unit 36 moves the assembly coupling unit 4033 to directly above the lead, so that the head top unit 4033H is close to the wafer CP held in the first wafer holding unit 4512. Then, the head top driving unit 36 moves the head top unit 4033H to directly above the lead until the front end of the head top unit 4033H contacts the position on the opposite side of the bonding surface CPf of the wafer CP. Then, the holding mechanism 440 adsorbs the peripheral portion of the wafer CP on the wafer tool 411. Thus, the front end of the head top 33H holds the chip CP. The subsequent operation of the chip mounting system 4 is the same as that of the first embodiment. In addition, the chip mounting system 4 of this variation does not determine the posture of the chip CP held in the first chip holding portion 4512 that becomes a Bernoulli chuck. Therefore, the chip mounting system 4 of this variation preferably has an alignment and positioning mechanism (not shown) that aligns and positions the posture of the chip CP before the chip CP is delivered to the head top 4033H.
如果是藉由本構造的話，則以藉由成為以非接觸來保持供應之晶片CP之接合面CPf側之伯努利（Bernoulli）夾頭之第1晶片保持部4512而保持晶片CP之狀態，來搬送晶片CP至在頭頂部4033H移載晶片CP之移載位置Pos1為止。可以藉此而無接觸晶片CP之接合面CPf，來搬送晶片CP，因此，抑制異物對於晶片CP之接合面CPf之附著以及晶片CP之接合面CPf之損傷。此外，第1晶片搬送部51係以晶片CP之接合面CPf朝向至鉛直下方之狀態，來搬送晶片CP，因此，抑制在晶片CP之接合面CPf來載持異物。所以，抑制晶片CP和基板WT之間之接合不良之發生。此外，作為頭頂部4033H係可以採用：無具備實施形態1之頭頂部33H所具有之晶片支持部432a和支持部驅動部432b之構造，因此，具有所謂簡化頭頂部4033H之構造之優點。According to this structure, the first chip holding part 4512, which is a Bernoulli chuck that holds the bonding surface CPf of the supplied chip CP in a non-contact manner, holds the chip CP and transports the chip CP to the transfer position Pos1 where the chip CP is transferred on the head top part 4033H. The chip CP can be transported without contacting the bonding surface CPf of the chip CP, thereby suppressing the adhesion of foreign matter to the bonding surface CPf of the chip CP and the damage to the bonding surface CPf of the chip CP. In addition, the first
在各實施形態，晶片供應部係可以具有例如圖20（A）所示之盤體6116和吸引部6117。在此，盤體6116係具有：晶片CP配置於內側並且設置複數個之凹部6116b之盤本體6116a、突設於凹部6116b之底部並且具有例如插銷狀之形狀之支持部6116c、以及擔架於由凹部6116b之底部開始離開之位置之黏著薄片ATE1。支持部6116c係例如在每個之凹部6116b，分別存在每4個。但是，支持部6116c之數目係可以是在每個之凹部6116b而分別成為每3個，並且，也可以是在每個之凹部6116b而分別成為每5個以上。黏著薄片ATE1係在具有相反於盤本體6116a之凹部6116b之底部側之相反側之黏著性之面，來保持晶片CP。在此，晶片CP係可以是相反於接合面CPf之相反側來貼合於黏著薄片ATE1，並且，也可以是接合面CPf側來貼合於黏著薄片ATE1。此外，在盤本體6116a之凹部6116b之底部，穿設連通於凹部6116b之底部和黏著薄片ATE1之間之區域S1之連通孔6116d。吸引部6117係具有真空泵（無圖示），以在黏著薄片ATE1來保持晶片CP之狀態，在供應晶片CP之際，通過盤體6116之連通孔6116d而吸引存在於前述區域S1之空氣。In each embodiment, the chip supply unit may include a disk body 6116 and a suction unit 6117 as shown in FIG. 20 (A). Here, the disk body 6116 includes: a disk body 6116a in which a plurality of recesses 6116b are provided and a chip CP is arranged inside; a support unit 6116c protruding from the bottom of the recess 6116b and having a shape such as a latch; and an adhesive sheet ATE1 supported at a position away from the bottom of the recess 6116b. The support unit 6116c is, for example, present in four in each recess 6116b. However, the number of the support units 6116c may be three in each recess 6116b, or five or more in each recess 6116b. The adhesive sheet ATE1 holds the chip CP on the adhesive surface opposite to the bottom side of the recess 6116b of the disk body 6116a. Here, the chip CP can be attached to the adhesive sheet ATE1 on the side opposite to the bonding surface CPf, and can also be attached to the adhesive sheet ATE1 on the bonding surface CPf side. In addition, a connecting hole 6116d is formed at the bottom of the recess 6116b of the disk body 6116a, which connects the bottom of the recess 6116b and the area S1 between the adhesive sheet ATE1. The suction part 6117 has a vacuum pump (not shown) to hold the chip CP on the adhesive sheet ATE1, and suck the air existing in the aforementioned area S1 through the connecting hole 6116d of the disk body 6116 when supplying the chip CP.
本變化例之晶片供應部係例如圖20（B）所示，以在黏著薄片ATE1來保持晶片CP之狀態，藉由吸引部6117而通過盤體6116之連通孔6116d，吸引存在於前述區域S1之空氣。藉此而減少成為黏著薄片ATE1和晶片CP之間之接觸部分P61面積之接觸面積。接著，在本變化例之晶片供應部藉由吸引部6117而吸引存在於前述區域S1之空氣之時，正如圖20（C）所示，還更加地減少黏著薄片ATE和晶片CP之間之接觸部分P62之面積，由黏著薄片ATE1開始脫離晶片。The chip supply unit of this variation is, for example, as shown in FIG. 20 (B), in order to hold the chip CP in the state of the adhesive sheet ATE1, and to suck the air existing in the aforementioned area S1 through the connecting hole 6116d of the plate 6116 by the suction unit 6117. In this way, the contact area that becomes the contact part P61 area between the adhesive sheet ATE1 and the chip CP is reduced. Then, when the chip supply unit of this variation sucks the air existing in the aforementioned area S1 by the suction unit 6117, as shown in FIG. 20 (C), the area of the contact part P62 between the adhesive sheet ATE and the chip CP is further reduced, and the chip starts to be separated from the adhesive sheet ATE1.
如果是藉由本構造的話，則具有所謂即使是在晶片CP無貼合於薄片TE之狀態下也可以供應晶片CP至構裝結合裝置30、4030之優點。此外，盤體6116係在凹部6116b之內側，在晶片CP之周圍部無接觸到凹部6116b之內壁之位置，貼合於黏著薄片ATE1。藉此而即使是在盤體6116來施加振動之狀態下，晶片CP係也無接觸到凹部6116b之內壁，因此，抑制來自起因於晶片CP對於凹部6116b之內壁之接觸而造成之晶片CP之微粒發生。This structure has the advantage that the chip CP can be supplied to the assembly bonding device 30, 4030 even when the chip CP is not attached to the sheet TE. In addition, the plate 6116 is attached to the adhesive sheet ATE1 at the inner side of the recess 6116b, at a position where the peripheral portion of the chip CP does not touch the inner wall of the recess 6116b. Thus, even when the plate 6116 is vibrated, the chip CP does not touch the inner wall of the recess 6116b, thereby suppressing the generation of particles of the chip CP caused by the contact of the chip CP with the inner wall of the recess 6116b.
在各實施形態，晶片供應部係也可以具有例如圖21（A）所示之晶片供應頭頂部7116和吸引部7117。晶片供應頭頂部7116係具有：設置於凹部7116b之頭頂部本體7116a以及突設於凹部7116b之底部並且具有例如插銷狀之形狀之支持部7116c。支持部7116c係例如存在4個。但是，支持部7116c之數目係可以是3個，並且，也可以是5個以上。此外，在頭頂部本體7116a之凹部7116b之底部，設置用以吸引存在於凹部7116b之內側之氣體之吸引孔7116d。吸引部7117係具有真空泵（無圖示），通過吸引孔7116d而吸引存在於凹部7116b之內側之氣體。In each embodiment, the chip supply part may also have a chip supply head top part 7116 and a suction part 7117 as shown in FIG. 21 (A). The chip supply head top part 7116 has: a head top body 7116a disposed in a recess 7116b, and a support part 7116c protruding from the bottom of the recess 7116b and having, for example, a pin-like shape. There are, for example, four support parts 7116c. However, the number of support parts 7116c may be three, and may be five or more. In addition, at the bottom of the recess 7116b of the head top body 7116a, a suction hole 7116d for sucking the gas present on the inner side of the recess 7116b is provided. The suction portion 7117 has a vacuum pump (not shown) and sucks the gas inside the recess 7116b through the suction hole 7116d.
本變化例之晶片供應部係在供應晶片CP之際，例如圖21（A）之箭號AR91所示，使得晶片供應頭頂部7116，接近於對應在貼合於黏著薄片ATE2之複數個之晶片CP中之1個晶片之對應部分而接觸到黏著薄片ATE2。在此，黏著薄片ATE2係在具有黏著性之面，來保持複數個之晶片CP。此外，晶片CP係可以是相反於接合面CPf之相反側來貼合於黏著薄片ATE2，並且，也可以是接合面CPf側來貼合於黏著薄片ATE2。接著，晶片供應部係拉近晶片供應頭頂部7116至相反於保持黏著薄片ATE2之複數個之晶片CP之面之相反側之面。The chip supply unit of this variation makes the chip supply head top portion 7116 approach the corresponding portion of one chip among the plurality of chips CP bonded to the adhesive sheet ATE2 and contact the adhesive sheet ATE2 when supplying the chip CP, as shown by the arrow AR91 in FIG. 21 (A). Here, the adhesive sheet ATE2 is used to hold the plurality of chips CP on the adhesive surface. In addition, the chip CP can be bonded to the adhesive sheet ATE2 on the opposite side of the bonding surface CPf, and can also be bonded to the adhesive sheet ATE2 on the bonding surface CPf side. Then, the chip supply unit pulls the chip supply head top portion 7116 closer to the surface opposite to the surface holding the plurality of chips CP on the adhesive sheet ATE2.
接著，晶片供應部係正如圖21（B）所示，以晶片供應頭頂部7116接觸到黏著薄片ATE2之狀態，通過吸引孔7116d而吸引存在於凹部7116b之內側之區域S2之空氣。藉此而減少成為黏著薄片ATE2和晶片CP之間之接觸部分P72之面積，由黏著薄片ATE2開始脫離晶片CP。Next, as shown in FIG. 21 (B), the chip supply unit sucks air in the area S2 inside the recess 7116b through the suction hole 7116d while the chip supply head top 7116 contacts the adhesive sheet ATE2. This reduces the area of the contact portion P72 between the adhesive sheet ATE2 and the chip CP, and the adhesive sheet ATE2 begins to separate from the chip CP.
如果是藉由本構造的話，則可以無傷害到黏著薄片ATE2而供應晶片CP，因此，具有所謂抑制來自黏著薄片ATE2而發生之異物對於晶片CP之附著之優點。According to this structure, the chip CP can be supplied without damaging the adhesive sheet ATE2, and thus there is an advantage of suppressing the adhesion of foreign matter from the adhesive sheet ATE2 to the chip CP.
在各實施形態，複數個之晶片CP係可以保持在例如由於照射紫外線而降低黏著力之黏著薄片。在該狀態下，晶片供應部係具有：具備紫外線照射部（無圖示）之晶片供應頭頂部，可以在供應晶片CP之際，藉由紫外線照射部，而在貼合黏著薄片之供應對象之晶片CP之部分，來照射紫外線。此外，作為使用前述之圖20和圖21而說明之黏著薄片ATE1、ATE2係可以採用由於照射紫外線而降低黏著力之黏著薄片。在該狀態下，晶片供應部係可以成為在供應晶片CP之際，藉由吸引部6117、7117而吸引黏著薄片ATE1、ATE2同時照射紫外線的構造。In each embodiment, a plurality of chips CP can be held on an adhesive sheet whose adhesive force is reduced by, for example, irradiation with ultraviolet rays. In this state, the chip supply unit has: a chip supply head having an ultraviolet irradiation unit (not shown), which can irradiate ultraviolet rays on the portion of the chip CP to be supplied that is bonded to the adhesive sheet by the ultraviolet irradiation unit when supplying the chip CP. In addition, the adhesive sheets ATE1 and ATE2 described using the aforementioned Figures 20 and 21 can be adhesive sheets whose adhesive force is reduced by irradiation with ultraviolet rays. In this state, the chip supply unit can be configured to irradiate ultraviolet rays while sucking the adhesive sheets ATE1 and ATE2 by the suction units 6117 and 7117 when supplying the chip CP.
在各實施形態，在構裝結合裝置30，關於台座31以基板WT之安裝面WTf朝向鉛直下方之姿勢而保持基板WT之例子，來進行說明，但是，保持之基板WT之姿勢係並非限定於此。例如台座能夠以基板WT之安裝面WTf朝向鉛直上方之姿勢，來保持基板WT。In each embodiment, in the assembly and combination device 30, the example in which the base 31 holds the substrate WT with the mounting surface WTf of the substrate WT facing directly downward is described, but the posture of the held substrate WT is not limited to this. For example, the base can hold the substrate WT with the mounting surface WTf of the substrate WT facing directly upward.
在各實施形態，構裝結合裝置30係可以具備：具有吸附支柱桿之頭頂部。例如圖22（A）所示，頭頂部8033H係可以具有晶片工具8411、頭頂本體部8413、吸附支柱桿8432a和吸附支柱桿驅動部8432b。此外，在圖22（A），關於相同於各實施形態之同樣之構造，附加相同於圖3（A）之相同之符號。在此，頭頂本體部8413係相同於各實施形態之頭頂本體413，具有擠壓晶片CP之中央部之擠壓機構431。擠壓機構431係具有：擠壓部431a以及驅動擠壓部431a之擠壓驅動部431b。晶片工具8411係具有：形成在對應於頭頂本體部8413之吸附支柱桿8432a之位置之貫通孔8411c以及擠壓部431a***至內側之貫通孔8411b。In each embodiment, the assembly and combination device 30 may include: a head having an adsorption support rod. For example, as shown in FIG. 22 (A), the head 8033H may include a wafer tool 8411, a head body 8413, an adsorption support rod 8432a, and an adsorption support rod driving part 8432b. In addition, in FIG. 22 (A), the same symbols as in FIG. 3 (A) are attached to the same structure as in each embodiment. Here, the head body 8413 is the same as the head body 413 in each embodiment, and has an extrusion mechanism 431 for squeezing the central part of the wafer CP. The squeezing mechanism 431 includes a squeezing portion 431a and a squeezing driving portion 431b for driving the squeezing portion 431a. The wafer tool 8411 includes a through hole 8411c formed at a position corresponding to the suction support rod 8432a of the head body 8413 and a through hole 8411b into which the squeezing portion 431a is inserted.
吸附支柱桿8432a係具有例如在內側來設置吸附孔8440之長尺筒狀之形狀，成為設置在頭頂部4033H之前端部而可自由地移動至鉛直方向之元件支持部。吸附支柱桿8432a係例如存在4個。但是，吸附支柱桿8432a之數目係可以是3個，並且，也可以是5個以上。吸附支柱桿8432a係以吸附相反於晶片CP之接合面CPf側之相反側之狀態，來支持晶片CP。吸附支柱桿驅動部8432b係正如圖22（B）之箭號AR8036所示，驅動吸附支柱桿8432a至鉛直方向。此外，吸附支柱桿驅動部8432b係具有真空泵（無圖示），藉由以晶片CP來載置於吸附支柱桿8432a之前端部之狀態，減壓吸附孔8440之內部，而吸附晶片CP。吸附支柱桿驅動部8432b係保持晶片CP之第1晶片保持部512位處於移載位置（例如圖1之Pos1），以在吸附支柱桿8432a之前端部來支持晶片CP之中央部之狀態，移動吸附支柱桿8432a至比起第1晶片保持部512還更加上方之鉛直上方側。藉此而由第1晶片搬送部51之第1晶片保持部512開始至頭頂部8033H，來移載晶片CP。此外，吸附支柱桿係並非限定為插銷狀，也可以具有進行配置而圍繞擠壓機構431之圓筒狀之形狀。The adsorption support rod 8432a has a long cylindrical shape with an adsorption hole 8440 provided on the inner side, and is provided at the front end of the head top portion 4033H and is a component support portion that can be freely moved to the vertical direction. There are, for example, four adsorption support rods 8432a. However, the number of adsorption support rods 8432a can be three, and can also be five or more. The adsorption support rod 8432a supports the chip CP in a state of adsorbing the side opposite to the bonding surface CPf side of the chip CP. The adsorption support rod driving portion 8432b drives the adsorption support rod 8432a to the vertical direction as shown by the arrow AR8036 in Figure 22 (B). In addition, the adsorption support rod driving part 8432b has a vacuum pump (not shown), and when the wafer CP is placed on the front end of the adsorption support rod 8432a, the pressure inside the adsorption hole 8440 is reduced to adsorb the wafer CP. The adsorption support rod driving part 8432b holds the first
在各實施形態，關於藉由以保持晶片CP之第1晶片保持部512位處於移載位置Pos1之狀態而支持晶片CP之中央部之晶片支持部432a來移動至比起第1晶片保持部512還更加上方之鉛直上方而由第1晶片保持部512開始至頭頂部33H來移載晶片CP之例子，進行說明。但是，並非限定於此，例如可以藉由以保持晶片CP之第1晶片保持部512來位處於移載位置Pos1並且藉由晶片支持部432a而支持晶片CP之中央部之狀態，來移動第1晶片保持部512至鉛直下方，而由第1晶片保持部512開始至頭頂部33H，來移載晶片CP。In each embodiment, an example is described in which the chip CP is transferred from the first
在各實施形態，關於藉由構裝結合裝置30、4030來移動頭頂部33H至朝向於台座31之方向而在基板WT來安裝晶片CP之例子，進行說明。但是，並非限定於此，也可以藉由構裝結合裝置30、4030，移動例如台座31至接近於頭頂部33H之方向，而在基板WT，來安裝晶片CP。In each embodiment, an example is described in which the head 33H is moved toward the pedestal 31 by the assembly and coupling device 30, 4030 to mount the chip CP on the substrate WT. However, the present invention is not limited thereto, and the chip CP may be mounted on the substrate WT by moving, for example, the pedestal 31 to a direction close to the head 33H by the assembly and coupling device 30, 4030.
在實施形態1，薄片保持框112係例如圖23（A）所示，成為在具有黏著性之面來保持複數個之晶片CP之黏著薄片，可以在貼合複數個之晶片CP之各個區域，來保持形成孔洞HA10之薄片TE10。接著，正如圖23（B）所示，檢取機構8111係可以具有：吸附支柱桿8111a和吸附支柱桿驅動部8111b。吸附支柱桿8111a係具有例如在內側來設置吸附孔（無圖示）之長尺筒狀之形狀之晶片支持插銷（元件支持插銷）。吸附支柱桿8111a係例如存在4個。但是，吸附支柱桿8111a之數目係可以是3個，並且，也可以是5個以上。吸附支柱桿8111a係以吸附相反於晶片CP之接合面CPf側之相反側之狀態，來支持晶片CP之晶片支持插銷。吸附支柱桿驅動部8111b係具有真空泵（無圖示），藉由以晶片CP來載置於吸附支柱桿8111a之前端部之狀態，減壓吸附孔之內部，而吸附晶片CP。檢取機構8111係正如圖23（B）之箭號AR10所示，可以藉著由薄片TE10之鉛直下方（－Z方向）開始，使得吸附支柱桿8111a插通於孔洞HA10而使得1個之晶片CP，成為由薄片TE10來脫離晶片CP之狀態。在此，檢取機構111係在移動至鉛直上方（＋Z方向）之際，使得吸附支柱桿8111a插通於孔洞HA10。此外，檢取機構8111所具有之晶片支持插銷係並非限定於吸附支柱桿8111a，也可以是在實施形態1所說明之針頭111a。此外，在本變化例之晶片安裝系統，可以具備：藉由在以薄片保持框112無穿設孔洞之狀態來保持之薄片（無圖示），穿設孔洞HA10而製作形成孔洞HA10之薄片TE10之穿孔部（無圖示）。In the embodiment 1, the sheet holding frame 112 is, for example, as shown in FIG. 23 (A), an adhesive sheet for holding a plurality of chips CP on an adhesive surface, and can hold the sheet TE10 with holes HA10 formed in each area where the plurality of chips CP are bonded. Next, as shown in FIG. 23 (B), the picking mechanism 8111 can have: an adsorption support rod 8111a and an adsorption support rod driving part 8111b. The adsorption support rod 8111a is a chip support pin (component support pin) in the shape of a long tube with an adsorption hole (not shown) provided on the inner side. There are, for example, four adsorption support rods 8111a. However, the number of adsorption support rods 8111a can be three, and can also be five or more. The adsorption support rod 8111a is a chip support pin that supports the chip CP by adsorbing the side opposite to the bonding surface CPf of the chip CP. The adsorption support rod driving part 8111b has a vacuum pump (not shown) and adsorbs the chip CP by reducing the pressure inside the adsorption hole when the chip CP is placed on the front end of the adsorption support rod 8111a. As shown by the arrow AR10 in Figure 23 (B), the picking mechanism 8111 can start from the bottom of the sheet TE10 (-Z direction) and insert the adsorption support rod 8111a into the hole HA10 to make one chip CP separate from the sheet TE10. Here, the picking mechanism 111 is moved to the vertically upward direction (+Z direction) so that the adsorption support rod 8111a is inserted into the hole HA10. In addition, the chip support pin of the picking mechanism 8111 is not limited to the adsorption support rod 8111a, and can also be the needle 111a described in the embodiment 1. In addition, the chip mounting system of this variation can have: a perforated portion (not shown) of the sheet TE10 formed with the hole HA10 is made by perforating the sheet (not shown) held by the sheet holding frame 112 without the hole HA10.
如果是藉由本構造的話，則比起例如藉由針頭111a而突破薄片TE之構造，還具有所謂由薄片TE10來產生異物之可能性變低之優點。此外，在具備：具有吸附支柱桿8111a之檢取機構8111之構造之狀態下，晶片CP係吸附及保持在吸附支柱桿8111a之前端部，因此，具有所謂抑制晶片CP之位置偏離之優點。This structure has the advantage that the possibility of foreign matter being generated by the sheet TE10 is reduced compared to, for example, a structure in which the needle 111a breaks through the sheet TE. In addition, in a state in which the picking mechanism 8111 having the adsorption support rod 8111a is provided, the chip CP is adsorbed and held at the front end of the adsorption support rod 8111a, thereby having the advantage of suppressing the position deviation of the chip CP.
在各實施形態，晶片供應部係例如圖24（A）所示，可以具有盤體8516。在此，盤體8516係具有：設置晶片CP配置於內側之凹部8516b之盤本體8516a、以及設置於凹部8516b之底部之黏著構件8517。黏著構件8517係例如凝膠狀之黏著薄片。在盤本體8516a之凹部8516b之底部，形成盤本體8516b貫通於厚度方向之貫通孔8516c。該貫通孔8516c係具有例如可以***前述檢取機構8111之吸附支柱桿8111a之剖面積。在此，盤體8516係例如以盤本體8516a之凹部8516b側來朝向鉛直上方之姿勢而進行配置。接著，檢取機構8111係正如圖24（B）所示，藉著由盤體8516之鉛直下方開始，使得吸附支柱桿8111a插通於其貫通孔8516c，提升晶片CP至鉛直上方，而由盤體8516開始脫離晶片CP（參考圖24（B）之箭號AR85）。In each embodiment, the chip supply unit may include a disk body 8516, as shown in FIG. 24 (A). Here, the disk body 8516 includes: a disk body 8516a in which a chip CP is arranged in a recess 8516b on the inner side, and an adhesive member 8517 provided at the bottom of the recess 8516b. The adhesive member 8517 is, for example, a gel-like adhesive sheet. A through hole 8516c is formed at the bottom of the recess 8516b of the disk body 8516a, which passes through the disk body 8516b in the thickness direction. The through hole 8516c has a cross-sectional area, for example, into which the adsorption support rod 8111a of the aforementioned pickup mechanism 8111 can be inserted. Here, the disk 8516 is arranged, for example, with the concave portion 8516b of the disk body 8516a facing vertically upward. Then, as shown in FIG24(B), the picking mechanism 8111 starts from the vertically downward of the disk 8516, inserts the suction support rod 8111a into its through hole 8516c, and lifts the wafer CP to the vertically upward, and starts to separate from the disk 8516 (refer to the arrow AR85 in FIG24(B)).
或者是晶片供應部係可以具有：例如圖25（A）所示之盤體8616、以及具有真空泵（無圖示）之吸引部（無圖示）。在此，盤體8616係具有：設置晶片CP配置於內側之凹部8616b之盤本體8616a、突設於凹部8616b之底部之間隔壁8618、以及擔架於間隔壁8618之前端部之黏著薄片8617。在盤本體8616a之凹部8616b之底部，形成盤本體8616b貫通於厚度方向之貫通孔8616c。該貫通孔8616c係也相同於前面之敘述，具有例如可以***前述檢取機構8111之吸附支柱桿8111a之剖面積。間隔壁8618係進行設置而圍繞凹部8616b之底部之貫通孔8616c。黏著薄片8617係在具有相反於盤本體8616a之凹部8616b之底部側之相反側之黏性之面，來保持晶片CP。在此，晶片CP係相反於接合面CPf之相反側，可以貼合在黏著薄片8617，並且，也可以是接合面CPf側來貼合在黏著薄片8617。此外，在盤本體8616a之凹部8616b之底部，穿設連通於凹部8616b之底部和黏著薄片8617之間之區域S86之連通孔8616d。Alternatively, the chip supply unit may include, for example, a disk body 8616 as shown in FIG. 25 (A) and a suction unit (not shown) having a vacuum pump (not shown). Here, the disk body 8616 includes: a disk body 8616a in which a chip CP is arranged in a recess 8616b on the inner side, a partition wall 8618 protruding from the bottom of the recess 8616b, and an adhesive sheet 8617 supported on the front end of the partition wall 8618. A through hole 8616c is formed at the bottom of the recess 8616b of the disk body 8616a, which passes through the disk body 8616b in the thickness direction. The through hole 8616c is also the same as described above, and has a cross-sectional area such that the adsorption support rod 8111a of the aforementioned pickup mechanism 8111 can be inserted. The partition wall 8618 is provided to surround the through hole 8616c at the bottom of the recess 8616b. The adhesive sheet 8617 is provided to hold the chip CP on the adhesive surface opposite to the bottom side of the recess 8616b of the disk body 8616a. Here, the chip CP can be attached to the adhesive sheet 8617 on the opposite side of the bonding surface CPf, and can also be attached to the adhesive sheet 8617 on the bonding surface CPf side. In addition, a through hole 8616d is provided at the bottom of the recess 8616b of the disk body 8616a to connect the bottom of the recess 8616b and the area S86 between the adhesive sheet 8617.
在此，例如以盤本體8616a之凹部8616b側來朝向鉛直上方之姿勢，而配置盤體8616。接著，檢取機構8111係正如圖25（B）所示，藉著由盤體8616之鉛直下方開始，使得吸附支柱桿8111a插通於其貫通孔8616c，提升晶片CP至鉛直上方，而由盤體8616開始脫離晶片CP（參考圖25（B）之箭號AR861）。此時，吸引部係以在黏著薄片8617來保持晶片CP之狀態，在供應晶片CP之際，通過盤體8616之連通孔8616d而吸引存在於前述區域S86之空氣（圖25（B）之箭號AR862）。藉此而減少黏著薄片8617和晶片CP之間之接觸部分之面積，因此，在藉由檢取機構8111而提升晶片CP至鉛直上方之際，能夠由黏著薄片8617開始呈圓滑順暢地脫離晶片CP。Here, for example, the plate body 8616 is arranged with the concave portion 8616b side of the plate body 8616a facing vertically upward. Next, as shown in FIG. 25 (B), the picking mechanism 8111 starts from the vertically downward of the plate body 8616, inserts the suction support rod 8111a into its through hole 8616c, lifts the chip CP to the vertically upward, and starts to separate from the plate body 8616 (refer to the arrow AR861 in FIG. 25 (B)). At this time, the suction part holds the chip CP in the state of the adhesive sheet 8617, and while supplying the chip CP, it sucks the air existing in the aforementioned area S86 through the through hole 8616d of the plate body 8616 (arrow AR862 in FIG. 25 (B)). Thereby, the contact area between the adhesive sheet 8617 and the chip CP is reduced, so that when the chip CP is lifted to a vertical position by the picking mechanism 8111, the chip CP can be smoothly detached from the adhesive sheet 8617.
如果是藉由本構造的話，則具有所謂即使是在晶片CP無貼合於薄片TE之狀態下而也可以供應晶片CP至構裝結合裝置30、4030之優點。This structure has the advantage that the chip CP can be supplied to the assembly bonding device 30, 4030 even when the chip CP is not attached to the sheet TE.
在實施形態1，搬送晶片CP之第1晶片搬送部係可以是例如圖26所示之第1晶片搬送部（也稱為轉盤）5039。此外，在圖26，關於相同於實施形態1之同樣之構造，附加相同於圖1之相同之符號。第1晶片搬送部5039係搬送由晶片供應部11所供應之晶片CP，至在構裝結合部33之頭頂部33H來交接晶片CP之交接位置Pos1為止。第1晶片搬送部5039係具有例如2片之平板5391、臂件5394、設置於臂件5394之前端部之第1晶片保持部5393、以及呈一起共同地旋轉及驅動平板5391之平板驅動部5392。平板5391係長尺之矩形箱狀，以位處於晶片供應部5011和頭頂部33H之間之其他端部（軸AX）作為基點而旋轉某一端部。此外，平板5391之數目係並非限定於2片，也可以是3片以上。臂件5394係長尺狀，沿著平板5391之長邊方向而進行突出或沒入。第1晶片保持部5393係設置在臂件5394之前端部，具有保持晶片CP之2個之腳片5393a。在此，平板5391係正如圖27所示，可以在內側，收容臂件5394之前端部之第1晶片保持部5393。第1晶片搬送部5039係在旋轉平板5391之際，正如圖27之箭號AR508所示，藉由臂件5394沒入至平板5391之內，而在平板5391之內側，收納第1晶片保持部5393。藉此而抑制微粒對於搬送時之晶片CP之附著。此外，可以在2個之腳片5393a，設置吸附溝槽（無圖示）。在該狀態下，晶片CP係吸附及保持於腳片5392a，因此，可以呈無位置偏離地搬送晶片CP。此外，為了防止因為在旋轉平板5391之際而產生之離心力來造成之晶片CP之飛出，所以，可以在腳片5393a之前端部，設置突起（無圖示）。In the first embodiment, the first wafer conveying unit for conveying the wafer CP may be, for example, the first wafer conveying unit (also referred to as a turntable) 5039 shown in FIG. 26. In FIG. 26, the same symbols as those in FIG. 1 are attached to the same structures as those in the first embodiment. The first wafer conveying unit 5039 conveys the wafer CP supplied by the wafer supply unit 11 to the delivery position Pos1 at the top portion 33H of the assembly coupling unit 33 where the wafer CP is delivered. The first wafer conveying unit 5039 includes, for example, two
在此，檢取機構8111和構裝結合部33之頭頂部33H係在按照於Z軸方向而旋轉平板5391之時，配置在重疊於臂件5394之前端部之所描繪之軌跡OB1之位置。晶片搬送部5039係在由晶片供應裝置5010內之晶片供應部5011來接受晶片CP之時，正如圖1之箭號AR501所示，藉由中心軸AX周圍之旋轉動作而搬送晶片CP至重疊於構裝結合裝置5030內之頭頂部33H之交接位置Pos1為止。Here, the picking mechanism 8111 and the top portion 33H of the assembly coupling unit 33 are arranged at a position overlapping the trajectory OB1 drawn by the front end portion of the
晶片供應部5011係正如圖28所示，具有：保持薄片保持框112之框保持部119、檢取機構111和蓋體114。此外，在圖28，關於相同於實施形態1之同樣之構造，附加相同於圖1之相同之符號。構裝結合裝置5030係具有：台座31、具有頭頂部33H之構裝結合部33、以及驅動頭頂部33H之頭頂驅動部36。頭頂部33H係具有：晶片支持部432a和支持部驅動部432b。As shown in FIG. 28 , the wafer supply unit 5011 includes a frame holding unit 119 for holding a wafer holding frame 112, a picking mechanism 111, and a cover 114. In FIG. 28 , the same symbols as those in FIG. 1 are attached to the same structures as those in the first embodiment. The assembly-joined device 5030 includes a pedestal 31, an assembly-joined unit 33 having a top portion 33H, and a top driving unit 36 for driving the top portion 33H. The top portion 33H includes a wafer supporting unit 432a and a supporting unit driving unit 432b.
此外，本變化例之晶片安裝系統5係正如圖26所示，除了晶片供應部11和構裝結合部33以外，還具有：洗淨晶片CP之洗淨部5037以及晶片回收部5038。洗淨部5037係具有：支持晶片CP之晶片台座5036、晶片台座5036直交於鉛直方向並且驅動晶片台座5036至相互地直交之2方向（XY方向）之XY方向驅動部（未圖示）、以及噴出賦予超音波或超音速振動之水或者是還原電極表面之洗淨液之洗淨頭頂部5037a。此外，洗淨部5037係具有：在直交於鉛直方向之面內來旋轉晶片台座5036之旋轉驅動部（未圖示）。在此，洗淨部5037係首先藉由洗淨頭頂部5037a而將施加超音波之水，來吹附於晶片CP，同時，掃描支持晶片CP之晶片台座5036至XY方向，洗淨晶片CP之接合面CPf之整個面。接著，洗淨部5037係在停止藉由洗淨頭頂部5037a而造成之水之噴出之後，藉由旋轉晶片台座5036而對於晶片CP，來進行旋轉乾燥。In addition, as shown in FIG. 26, the wafer mounting system 5 of this variation further includes a cleaning section 5037 for cleaning the wafer CP and a wafer recovery section 5038 in addition to the wafer supply section 11 and the assembly coupling section 33. The cleaning section 5037 includes a wafer stage 5036 for supporting the wafer CP, an XY direction driving section (not shown) for driving the wafer stage 5036 in two directions (XY directions) perpendicular to the lead direction, and a cleaning head top section 5037a for spraying water that imparts ultrasonic waves or supersonic vibrations or a cleaning liquid for restoring the electrode surface. In addition, the cleaning section 5037 includes a rotation driving section (not shown) for rotating the wafer stage 5036 in a plane perpendicular to the lead direction. Here, the cleaning section 5037 first blows water with ultrasonic waves onto the chip CP through the cleaning head top 5037a, and at the same time, scans the chip stage 5036 supporting the chip CP in the XY direction to clean the entire surface of the bonding surface CPf of the chip CP. Then, after stopping the water spraying caused by the cleaning head top 5037a, the cleaning section 5037 rotates the chip stage 5036 to perform rotation drying on the chip CP.
但是，晶片CP係具有矩形板狀之形狀，因此，在吹附水同時旋轉晶片CP之時，恐怕會損傷晶片CP之邊緣部分。相對於此，本變化例之洗淨部5037係藉由水噴出部而將施加超音波之水，來吹附於晶片CP，同時，往復地移動支持晶片CP之晶片台座至XY方向。藉此而抑制晶片CP之邊緣部分之損傷。此外，洗淨部5037係也可以藉由例如取代水之N2 之惰性氣體，來吹附於晶片CP，而除去附著於晶片CP之微粒。However, the chip CP has a rectangular plate shape, and therefore, when the chip CP is rotated while being blown with water, the edge of the chip CP may be damaged. In contrast, the cleaning section 5037 of this variation blows water to which ultrasonic waves are applied to the chip CP through a water spray section, and at the same time, reciprocates the chip stage supporting the chip CP in the XY direction. This suppresses damage to the edge of the chip CP. In addition, the cleaning section 5037 may also remove particles attached to the chip CP by blowing an inert gas such as N2 instead of water onto the chip CP.
晶片台座5036係在藉由洗淨部5037而造成之晶片CP之洗淨後，調整保持於晶片保持部5393之晶片CP之姿勢。可以藉此而即使是在晶片供應部11之晶片CP之切出時，發生晶片CP之位置偏離，也可以在晶片台座5036，來進行對準定位。因此，可以無發生晶片CP之位置偏離而將晶片CP移載至構裝結合部33之頭頂部33H。特別是在藉由針頭111a而擠破薄片TE來切出晶片CP之狀態下，有效於容易發生位置偏離之狀況。此外，即使是在為了取代晶片供應部11而具備藉由伯努利（Bernoulli）夾頭來搬送晶片CP之晶片供應部之狀態下，晶片CP係也以非接觸，來保持於伯努利（Bernoulli）夾頭，因此，容易發生晶片CP之位置偏離。所以，正如該晶片台座5036，在交接於頭頂部33H之即刻前，具備調整晶片CP之姿勢之機構係變得有效。The wafer stage 5036 adjusts the posture of the wafer CP held in the
晶片回收部5038係由平板5391之軸AX（基點）來觀看的話而配置在平板5391之旋轉方向之頭頂部33H之鄰接位置之元件回收部。The chip recovery unit 5038 is a component recovery unit that is arranged at a position adjacent to the top portion 33H in the rotation direction of the
控制部5090係具有例如MPU（Micro Processing Unit：微處理單元）、主記憶部、輔助記憶部、介面、和連接各部分之匯流排，來控制構裝結合裝置30之頭頂驅動部36、台座驅動部32、保持機構440和擠壓機構431、晶片供應裝置10之晶片供應部11以及晶片搬送部5039。控制部90之MPU係藉由將輔助記憶部之所記憶之程式，讀入至主記憶部，來執行程式，透過介面，而分別輸出控制訊號至頭頂驅動部36、台座驅動部32、保持機構440、擠壓機構431、晶片供應部11以及晶片搬送部5039之各個。The control unit 5090 has, for example, an MPU (Micro Processing Unit), a main memory unit, an auxiliary memory unit, an interface, and a bus connecting various parts to control the overhead drive unit 36, the pedestal drive unit 32, the holding mechanism 440 and the squeezing mechanism 431 of the assembly and combination device 30, the chip supply unit 11 of the chip supply device 10, and the chip transfer unit 5039. The MPU of the control unit 90 executes the program by reading the program stored in the auxiliary memory unit into the main memory unit, and outputs control signals to the overhead drive unit 36, the pedestal drive unit 32, the holding mechanism 440, the squeezing mechanism 431, the chip supply unit 11, and the chip transfer unit 5039 through the interface.
接著，關於本變化例之晶片安裝系統5之動作，參考圖29乃至圖32，同時，進行說明。首先，在晶片安裝系統5，成為1個之平板5391朝向至晶片供應部11之方向之狀態。接著，藉由檢取機構111移動至鉛直上方，而由相反於薄片TE之複數個之晶片CP側之相反側開始，突出1個之晶片CP，成為由薄片TE來脫離1個之晶片CP之狀態。在該狀態下，晶片搬送部5039係由平板5391開始突出臂件5394。此時，成為在第1晶片保持部5393之2個之腳片5393a之間來配置檢取機構111之針頭111a之狀態。像這樣，正如圖29（A）及圖29（B）所示，成為在第1晶片保持部5393來交接晶片CP之狀態。在由該狀態開始移動檢取機構111至鉛直下方之時，晶片CP係交接至第1晶片保持部5393。Next, the operation of the chip mounting system 5 of this variation will be described with reference to FIG. 29 to FIG. 32 . First, in the chip mounting system 5, a
接著，晶片安裝系統5係在對於平板5391僅旋轉90度至圖29（A）之箭號AR501之方向之時，平板5391係配置在圖30（A）所示之洗淨部交接位置Pos10。也就是說，第1晶片搬送部5039係將保持由晶片供應部11所供應之晶片CP之第1晶片保持部5393，搬送至在洗淨部5037來交接晶片CP之洗淨部交接位置Pos10為止。在該狀態下，第1晶片搬送部5039係由第1晶片保持部5393開始至洗淨部5037之晶片台座5036，來移載晶片CP。接著，洗淨部5037係正如圖30（B）之箭號AR502所示，移動支持晶片CP之晶片台座5036至洗淨部5037之洗淨頭頂部5037a之下方。接著，洗淨部5037係藉著由洗淨頭頂部5037a所噴出之水而洗淨晶片CP。然後，洗淨部5037係再度移動支持晶片CP之晶片台座5036至洗淨部交接位置Pos10為止。接著，晶片台座5036係調整晶片CP之姿勢。接著，再度由晶片台座5036開始交接至第1晶片保持部5393。Next, when the wafer mounting system 5 rotates the
然後，晶片安裝系統5係在對於平板5391僅旋轉90度至圖30（A）之箭號AR501之方向之時，平板5391係配置在圖31（A）所示之位置。此時，第1晶片搬送部5039之臂件5394之前端部之第1晶片保持部5393係配置在構裝結合部33之頭頂部33H之鉛直上方之移載位置Pos1。也就是說，第1晶片搬送部5039係將保持在洗淨部交接位置Pos10所接受之晶片CP之第1晶片保持部5393，搬送至在頭頂部33H來移載晶片CP之移載位置Pos1為止。接著，頭頂驅動部36係移動構裝結合部33至鉛直上方而使得頭頂部33H接近於第1晶片保持部5393。接著，支持部驅動部432b係移動晶片支持部432a至鉛直上方。藉此而使得保持於第1晶片保持部5393之晶片CP，正如圖31（B）所示，以支持於晶片支持部432a之上端部之狀態，來配置在比起第1晶片保持部5393還更加上方之鉛直上方側。接著，第1晶片搬送部5039係使得臂件5394，沒入至平板5391內。然後，支持部驅動部432b係移動晶片支持部432a至鉛直下方。藉此而成為晶片CP保持於頭頂部33H之前端部之狀態。Then, when the wafer mounting system 5 rotates 90 degrees with respect to the
接著，晶片安裝系統5係藉由驅動台座31同時旋轉構裝結合部33，而執行修正晶片CP和基板WT之間之相對位置偏離之對準定位。接著，晶片安裝系統5係藉由上升頭頂部33H而在基板WT來安裝晶片CP。Next, the wafer mounting system 5 performs alignment positioning to correct the relative position deviation between the wafer CP and the substrate WT by driving the stage 31 and rotating the mounting coupling portion 33. Next, the wafer mounting system 5 mounts the wafer CP on the substrate WT by raising the head portion 33H.
在此，晶片安裝系統5係在嘗試進行晶片CP對於基板WT之接合而無法接合於基板WT之狀態下，再度在第1晶片搬送部5039之臂件5394之前端部之第1晶片保持部5393，來保持其晶片CP。然後，晶片安裝系統5係在對於平板5391僅旋轉90度至圖31（A）之箭號AR501之方向之時，平板5391係配置在圖32所示之位置。此時，第1晶片搬送部5039之臂件5394之前端部之第1晶片保持部5393係配置在晶片回收部5038之鉛直上方。接著，保持於第1晶片保持部5393之晶片CP係交接於晶片回收部5038。在此，晶片CP是否無法接合至基板WT係可以藉由在以基板WT側之紅外線透過攝錄機（未圖示）來測定晶片CP之位置偏離之際，以是否存在晶片CP而進行判定。此外，晶片CP是否殘留在頭頂部33H側係可以藉由以構裝結合部33側之紅外線透過攝錄機（未圖示）是否可以辨識晶片CP而進行判定。接著，可以在頭頂部33H來殘留晶片CP之狀態下，成為在設置於構裝結合裝置30之回收箱（未圖示）來排出晶片CP之構造。Here, the wafer mounting system 5, in a state where the wafer CP is not able to be bonded to the substrate WT after trying to bond the wafer CP to the substrate WT, again holds the wafer CP by the first
此外，在本變化例，關於第1晶片保持部5393係具有在前端部來保持晶片CP之2個之腳片5393a之例子而進行說明，但是，並非限定於此，例如可以在前端部，設置伯努利（Bernoulli）夾頭。In addition, in this variation, the first
如果是藉由本構造的話，則可以在由晶片供應部11開始至構裝結合部33來搬送晶片CP之途中，於洗淨部5037，進行晶片CP之洗淨，因此，容易以潔淨之狀態，來維持晶片CP之接合面CPf。因此，抑制晶片CP對於基板WT之接合不良。According to this structure, the chip CP can be cleaned in the cleaning section 5037 while being transported from the chip supply section 11 to the assembly bonding section 33, so that the bonding surface CPf of the chip CP can be easily maintained in a clean state. Therefore, poor bonding of the chip CP to the substrate WT can be suppressed.
但是，向來一般係以切出成為晶片CP之前之基板狀態，來進行洗淨，在該狀態下，在由基板來切出晶片CP之際，無法抑制由薄片TE來產生之微粒對於晶片CP之附著。此外，在藉由盤體來搬送晶片CP之狀態下，由於收納於盤體之晶片CP在搬送中而接觸到盤體之內壁來產生之微粒係也附著於晶片CP。因此，晶片CP之接合面CPf之整體係不容易接合在基板WT，藉由利用銲錫凸塊，在晶片CP和基板WT之間，製作間隙，或者是在銲錫內，加入微粒，而減低附著於晶片CP之微粒對於接合之影響。但是，在減小銲錫凸塊之大小，有限度存在，因此，必須擴寬接合晶片CP之基板WT之電極間距至50μm程度為止。因此，為了達到電極間距之窄小化，所以，要求藉由無凸塊而在基板WT來接合晶片CP。在該狀態下，必須在由晶片供應部11開始供應晶片CP之後，一直到晶片CP接合於基板WT為止之間，為了除去微粒，所以，必須洗淨晶片CP。However, the substrate is usually cleaned before being cut into a chip CP. In this state, when the chip CP is cut out from the substrate, it is impossible to suppress the adhesion of particles generated by the thin sheet TE to the chip CP. In addition, when the chip CP is transported by the tray, particles generated by the chip CP stored in the tray contacting the inner wall of the tray during transportation also adhere to the chip CP. Therefore, the entire bonding surface CPf of the chip CP is not easy to be bonded to the substrate WT. By using solder bumps to create a gap between the chip CP and the substrate WT, or by adding particles to the solder, the influence of particles attached to the chip CP on the bonding is reduced. However, there is a limit to reducing the size of the solder bumps, so the electrode pitch of the substrate WT to which the chip CP is bonded must be widened to about 50μm. Therefore, in order to achieve a narrower electrode pitch, it is required to bond the chip CP to the substrate WT without bumps. In this state, the chip CP must be cleaned from the time the chip supply unit 11 starts to supply the chip CP until the chip CP is bonded to the substrate WT in order to remove particles.
相對於此，如果是藉由本構造的話，則在1個之晶片安裝系統5之內，進行晶片CP之供應、晶片CP之洗淨以及晶片CP對於基板WT之接合為止之一連串之處理。藉此而抑制微粒對於晶片CP之附著，因此，可以使得晶片CP呈良好地接合於基板WT。In contrast, with this structure, a series of processes including supplying the chip CP, cleaning the chip CP, and bonding the chip CP to the substrate WT are performed in one chip mounting system 5. This suppresses the adhesion of particles to the chip CP, so that the chip CP can be well bonded to the substrate WT.
此外，如果是藉由本構造的話，則第1晶片搬送部5039係具有2個之第1晶片保持部5393。可以藉此而一併執行晶片CP之洗淨以及晶片CP對於基板WT之接合，因此，具有所謂減間歇損失之優點。Furthermore, according to this structure, the first wafer transfer unit 5039 has two first
此外，可以在前述之第1晶片搬送部5039，使得第1晶片保持部5393係具有伯努利（Bernoulli）夾頭。In addition, in the aforementioned first wafer transfer unit 5039, the first
或者是在前述之晶片安裝系統5，可以具備：具有成為伯努利（Bernoulli）夾頭之第2晶片保持部，將由晶片供應部11來供應之晶片CP，交接至第1晶片搬送部5039的第2晶片搬送部。在該狀態下，第1晶片搬送部5039係在由第2晶片搬送部之所接受之晶片CP來交接至頭頂部33H之前，交接晶片CP至執行晶片CP之對準定位之對準定位部（未圖示）。接著，第1晶片搬送部5039係接受藉由對準定位部而進行對準定位之晶片CP，搬送該晶片CP至頭頂部33H。可以藉此而使得第1晶片搬送部5039，以對準定位之狀態，交接晶片CP至頭頂部33H。Alternatively, the aforementioned wafer mounting system 5 may include: a second wafer holding portion that is a Bernoulli chuck that delivers the wafer CP supplied by the wafer supply portion 11 to the second wafer conveying portion 5039. In this state, the first wafer conveying portion 5039 delivers the wafer CP to an alignment and positioning portion (not shown) that performs alignment and positioning of the wafer CP before delivering the wafer CP received by the second wafer conveying portion to the head top portion 33H. Then, the first wafer conveying portion 5039 receives the wafer CP aligned and positioned by the alignment and positioning portion, and delivers the wafer CP to the head top portion 33H. In this way, the first wafer conveying portion 5039 can deliver the wafer CP to the head top portion 33H in an aligned and positioned state.
此外，在前述之晶片安裝系統5，頭頂部33H係可以在由第1晶片搬送部5039來接受晶片CP之前，在對準定位其位置之後，接受晶片CP。特別是在第1晶片搬送部5039，在第1晶片保持部5393為伯努利（Bernoulli）夾頭之狀態下，適合成為該構造。In addition, in the aforementioned wafer mounting system 5, the head top 33H can receive the wafer CP after aligning and positioning the position thereof before receiving the wafer CP by the first wafer conveying unit 5039. In particular, in the first wafer conveying unit 5039, when the first
在各實施形態，可以具備：洗淨晶片CP之洗淨部。在該狀態下，第1晶片搬送部51、4051係可以將保持由晶片供應部11、2011、3011所供應之晶片CP之第1晶片保持部512、4512，搬送至在洗淨部來交接晶片CP之洗淨部交接位置為止。接著，第1晶片搬送部51、4051係可以將保持在前述之洗淨部交接位置之所交接之晶片CP之第1晶片保持部512、4512，搬送至在頭頂部33H來移載晶片CP之移載位置為止。此外，晶片洗淨部係可以設置在構裝結合裝置30、4030之內，以在頭頂部33H載置晶片CP之狀態，來洗淨晶片CP。In each embodiment, there may be provided a cleaning section for cleaning the chip CP. In this state, the first
在各實施形態，可以具備活化處理部（未圖示），該活化處理部係藉由在晶片CP移載至頭頂部33H之前，對於晶片CP之接合面CPf，進行薄片電漿處理或者是照射粒子束，而活化晶片CP之接合面CPf。此外，在晶片CP之接合面CPf來形成金屬電極和絕緣體層之狀態下，在進行電漿處理之時，包含於電漿中之全部之離子係撞擊於接合面CPf，因此，恐怕會在金屬電極來附著絕緣體之微粒。所以，最好是藉由使用FAB（原子束）或IG（離子槍）而在接合面CPf照射粒子束來活化接合面CPf係比較可以抑制微粒之再附著。In each embodiment, an activation processing unit (not shown) may be provided, which activates the bonding surface CPf of the chip CP by performing a thin-sheet plasma treatment or irradiating a particle beam on the bonding surface CPf of the chip CP before the chip CP is transferred to the head top 33H. In addition, when the metal electrode and the insulator layer are formed on the bonding surface CPf of the chip CP, all ions contained in the plasma collide with the bonding surface CPf during the plasma treatment, so there is a possibility that particles of the insulator may be attached to the metal electrode. Therefore, it is better to activate the bonding surface CPf by irradiating a particle beam on the bonding surface CPf using FAB (atomic beam) or IG (ion gun) to suppress the re-attachment of particles.
如果是藉由本構造的話，則藉由對於晶片CP之接合面CPf，進行薄片電漿處理或者是照射粒子束，而活化接合面CPf，容易附著水分子而生成OH基，因此，可以提高晶片CP和基板WT之間之接合強度。If this structure is used, the bonding surface CPf of the chip CP is activated by performing thin-film plasma treatment or irradiating it with a particle beam, so that water molecules are easily attached to generate OH groups, thereby improving the bonding strength between the chip CP and the substrate WT.
在實施形態1，晶片供應部係正如圖33所示，具備：同步於檢取機構111之鉛直方向之移動而進行移動並且配置在藉由針頭111a而上突之晶片CP之鉛直上方的伯努利（Bernoulli）夾頭8711。或者是在前述之變化例，可以具備：同步於檢取機構8111之鉛直方向之移動而進行移動並且配置在藉由吸附支柱桿8111a而上突之晶片CP之鉛直上方的伯努利（Bernoulli）夾頭8711。如果是藉由本構造的話，則可以防止在藉由檢取機構111而造成之晶片CP之上突時之晶片CP之飛散或位置偏離。此外，在薄片TE無打開孔穴之狀態下，必須藉由針頭111a而擠破薄片TE，擠上晶片CP至上方，特別有效地防止晶片之飛散。In the first embodiment, the wafer supply unit is provided with a Bernoulli chuck 8711 which moves synchronously with the vertical movement of the pickup mechanism 111 and is arranged vertically above the wafer CP protruding by the needle 111a, as shown in FIG33. Alternatively, in the aforementioned variation, a Bernoulli chuck 8711 which moves synchronously with the vertical movement of the pickup mechanism 8111 and is arranged vertically above the wafer CP protruding by the suction support rod 8111a may be provided. With this structure, it is possible to prevent the wafer CP from scattering or positional deviation when the wafer CP is protruding by the pickup mechanism 111. In addition, when the sheet TE has no holes opened, the sheet TE must be squeezed by the needle 111a to squeeze the chip CP upward, which is particularly effective in preventing the chip from flying.
在實施形態1，晶片供應部係可以具有：利用伯努利（Bernoulli）夾頭之吸附力而由薄片TE開始脫離貼合於薄片TE之晶片CP，交接至第1晶片搬送部51的檢取機構。In the first embodiment, the wafer supply unit may include a pickup mechanism that uses the suction force of a Bernoulli chuck to separate the wafer CP attached to the wafer TE from the wafer TE and transfers the wafer CP to the first
在實施形態1，在晶片供應部來具有配置於晶片CP之鉛直上方之伯努利（Bernoulli）夾頭之狀態下，檢取機構係可以具有複數個之長尺板狀之晶片支持板（元件支持板），該複數個之長尺板狀之晶片支持板（元件支持板）係以前端部抵接於晶片CP之狀態，在直交於鉛直方向之面，藉由水平之姿勢而支持晶片CP之接合面CPf。例如圖34（A）所示，檢取機構9111係可以具有2個之長尺之晶片支持板9111a1、9111a2。在此，檢取機構9111係具備：藉由移動2個之晶片支持板9111a1、9111a2至直交於這些晶片支持板之延伸方向之方向，而相互地接近2個之晶片支持板9111a1、9111a2的支持板驅動部9111a。此外，檢取機構9111係具有：以薄片擔架於晶片支持板9111a1、9111a2之前端部之狀態，來吸引晶片支持板9111a1、9111a2之間之部分的吸引部（未圖示）。In the embodiment 1, in the state where the chip supply unit has a Bernoulli chuck disposed vertically above the chip CP, the picking mechanism can have a plurality of long plate-shaped chip support plates (component support plates), and the plurality of long plate-shaped chip support plates (component support plates) are in a state where the front end portion abuts against the chip CP, and the bonding surface CPf of the chip CP is supported in a horizontal posture on a surface perpendicular to the vertical direction. For example, as shown in FIG. 34 (A), the picking mechanism 9111 can have two long chip support plates 9111a1 and 9111a2. Here, the picking mechanism 9111 includes a supporting plate driving part 9111a that moves the two wafer supporting plates 9111a1 and 9111a2 in a direction perpendicular to the extending direction of the wafer supporting plates so as to approach the two wafer supporting plates 9111a1 and 9111a2. In addition, the picking mechanism 9111 includes a suction part (not shown) that suctions the portion between the wafer supporting plates 9111a1 and 9111a2 in a state where the sheet is supported on the front end portions of the wafer supporting plates 9111a1 and 9111a2.
此外，本變化例之晶片供應部係例如圖35（A）所示，具有吸附單元9115，該吸附單元9115係具有：將貼合相鄰接在對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP之部分予以吸附的吸附部9115a。在此，伯努利（Bernoulli）夾頭9711係具有例如搬送晶片CP至在頭頂部33H來移載晶片CP之移載位置為止的第1晶片搬送部。此外，伯努利（Bernoulli）夾頭9711係也可以具有搬送晶片CP至第1晶片搬送部之接受位置為止的第2晶片搬送部。在伯努利（Bernoulli）夾頭9711，並無規定晶片CP之水平方向之位置。於是，在伯努利（Bernoulli）夾頭9711，設置用以防止晶片CP之位置偏離之導引部9711a。導引部9711a係例如以在伯努利（Bernoulli）夾頭9711保持晶片CP之狀態而設置在圍繞伯努利（Bernoulli）夾頭9711之晶片CP之部位之矩形框狀。此外，對向於伯努利（Bernoulli）夾頭9711之晶片CP係相當於藉由檢取機構9111而切出之晶片CP。此外，相鄰接在對向於伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP係相當於藉由檢取機構9111而切出之晶片CP以外之晶片CP。吸附單元9115係可以藉著由相反於貼合薄片TE1之晶片CP之側之相反側開始吸附而使得導引部9711a無接觸到相鄰接在對向於伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP，對於貼合相鄰接在對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP之部分，上提晶片CP至伯努利（Bernoulli）夾頭9711之吸引力之所作用之位置為止。In addition, the chip supply unit of this variation is, for example, as shown in FIG. 35 (A), provided with an adsorption unit 9115, which has an adsorption unit 9115a for adsorbing a portion of the chip CP adjacent to the chip CP attached to the Bernoulli chuck 9711 facing the sheet TE1. Here, the Bernoulli chuck 9711 has, for example, a first chip transport unit for transporting the chip CP to a transfer position at the head top 33H for transporting the chip CP. In addition, the Bernoulli chuck 9711 may also have a second chip transport unit for transporting the chip CP to a receiving position of the first chip transport unit. In the Bernoulli chuck 9711, the horizontal position of the chip CP is not specified. Therefore, the Bernoulli chuck 9711 is provided with a guide portion 9711a for preventing the position of the chip CP from being deviated. The guide portion 9711a is, for example, a rectangular frame-shaped portion provided at a portion of the chip CP surrounding the Bernoulli chuck 9711 in order to maintain the state of the chip CP in the Bernoulli chuck 9711. In addition, the chip CP facing the Bernoulli chuck 9711 is equivalent to the chip CP cut out by the picking mechanism 9111. In addition, the chip CP adjacent to the chip CP facing the Bernoulli chuck 9711 is equivalent to the chip CP other than the chip CP cut out by the picking mechanism 9111. The adsorption unit 9115 can start adsorption from the opposite side of the chip CP opposite to the bonding sheet TE1 so that the guide portion 9711a does not touch the chip CP adjacent to the chip CP adjacent to the Bernoulli chuck 9711, and lifts the chip CP to the position where the attraction of the Bernoulli chuck 9711 acts on the portion of the chip CP adjacent to the chip CP bonded to the Bernoulli chuck 9711 opposite to the sheet TE1.
在此，關於本變化例之晶片供應部之動作，參考圖35及圖36，同時，進行說明。首先，晶片供應部係在藉由檢取機構9111而交接晶片CP至伯努利（Bernoulli）夾頭9711之際，正如圖35（A）之箭號AR901所示，藉由吸附單元9115而吸附貼合相鄰接在對向於伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP之部分。接著，檢取機構9111係在貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，來擠壓晶片支持板9111a1、9111a2之前端部。接著，支持部驅動部9111g係正如圖35（B）之箭號AR903所示，藉由移動晶片支持板9111a1、9111a2至相互地接近之方向，而在這些之前端部，摩擦貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分。此時，薄片TE1係稍微上提，在薄片TE1和晶片CP之薄片TE1之間之接觸面之間，附加角度，因此，藉著由晶片CP之外側開始至內側，移動晶片支持板9111a1、9111a2之前端部，而追蹤於該晶片支持板，由晶片CP開始剝離薄片TE1。接著，檢取機構9111係正如圖36（A）之箭號AR904所示，使得晶片支持板9111a1、9111a2之位置，回復到原本之位置。然後，吸引部係正如圖36（A）之箭號AR905所示，吸引薄片TE1之晶片支持板9111a1、9111a2之間之部分。在此，吸引部係可以吸引薄片TE1之晶片支持板9111a1、9111a2之間之部分，並且，檢取機構9111係可以使得晶片支持板9111a1、9111a2之位置，回復到原本之位置。藉此而成為容易由薄片TE1來剝離對向於伯努利（Bernoulli）夾頭9711之晶片CP之狀態。接著，檢取機構9111係正如圖36（B）之箭號AR906所示，藉由移動晶片支持板9111a1、9111a2至鉛直上方，而使得貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，上突至鉛直上方。此時，貼合相鄰接在對向於伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP之部分係藉由吸附單元9115而進行吸附，因此，防止相鄰接於上突之晶片CP之相鄰接之晶片CP來接觸到伯努利（Bernoulli）夾頭9711。此外，伯努利（Bernoulli）夾頭9711係如果不是成為晶片CP以水平之姿勢呈某種程度地接近於伯努利（Bernoulli）夾頭9711之附近為止之狀態的話，則無法產生吸引晶片CP之吸引力。另一方面，伯努利（Bernoulli）夾頭9711係為了規定晶片CP之水平方向之位置，因此，需要導引部9711a。相對於此，在本變化例，能夠以水平之姿勢，由導引部9711a之內側開始至伯努利（Bernoulli）夾頭9711，僅接近吸引於伯努利（Bernoulli）夾頭9711之晶片CP。因此，即使是設置導引部9711a，也可以在伯努利（Bernoulli）夾頭9711，來吸引晶片CP。接著，上突之晶片CP係交接至伯努利（Bernoulli）夾頭9711。也就是說，檢取機構9111係並無進行來自晶片CP之鉛直上方之晶片CP之支持，僅藉由晶片支持板9111a1、9111a2，而使得貼合薄片TE1之晶片CP之部分，進行上突，在直交於鉛直方向之面，使得晶片CP之接合面CPf，成為水平之姿勢。藉此而在上突貼合薄片TE1之晶片CP之部分之際，抑制晶片CP對於伯努利（Bernoulli）夾頭9711之導引部9711a之接觸。此外，藉由吸引部而吸引薄片TE1之時機係可以是藉由晶片支持板9111a1、9111a2而上突貼合薄片TE1之晶片CP之部分之後，並且，也可以是在移動晶片支持板9111a1、9111a2至相互地接近之方向之移動前或者是移動中。Here, the operation of the wafer supply unit of this variation is described with reference to FIG. 35 and FIG. 36 . First, when the wafer supply unit delivers the wafer CP to the Bernoulli chuck 9711 by the pick-up mechanism 9111, as shown by the arrow AR901 in FIG. 35 (A), the wafer supply unit sucks and bonds the portion of the wafer CP adjacent to the wafer CP facing the Bernoulli chuck 9711 by the suction unit 9115. Next, the pick-up mechanism 9111 squeezes the front end portions of the wafer support plates 9111a1 and 9111a2 by bonding the portion of the wafer CP facing the Bernoulli chuck 9711 facing the sheet TE1. Next, the support driving part 9111g moves the wafer support plates 9111a1 and 9111a2 in a direction close to each other as shown by the arrow AR903 in FIG. 35 (B), and at the front end thereof, frictionally contacts the portion of the wafer CP of the Bernoulli chuck 9711 facing the wafer TE1. At this time, the wafer TE1 is slightly lifted, and an angle is added between the contact surface of the wafer TE1 and the wafer CP, so that the front end of the wafer support plates 9111a1 and 9111a2 is moved from the outside to the inside of the wafer CP, and the wafer TE1 is peeled off from the wafer CP while tracking the wafer support plates. Next, the picking mechanism 9111 returns the positions of the wafer support plates 9111a1 and 9111a2 to their original positions as indicated by the arrow AR904 in FIG. 36 (A). Then, the suction unit attracts the portion between the wafer support plates 9111a1 and 9111a2 of the sheet TE1 as indicated by the arrow AR905 in FIG. 36 (A). Here, the suction unit attracts the portion between the wafer support plates 9111a1 and 9111a2 of the sheet TE1, and the picking mechanism 9111 returns the positions of the wafer support plates 9111a1 and 9111a2 to their original positions. This makes it easy for the wafer TE1 to peel off the wafer CP facing the Bernoulli chuck 9711. Next, the picking mechanism 9111 moves the wafer support plates 9111a1 and 9111a2 to the vertical position as shown by the arrow AR906 in FIG. 36 (B), so that the portion of the wafer CP bonded to the Bernoulli chuck 9711 facing the sheet TE1 protrudes to the vertical position. At this time, the portion of the wafer CP bonded to the wafer CP adjacent to the Bernoulli chuck 9711 is adsorbed by the adsorption unit 9115, thereby preventing the wafer CP adjacent to the protruding wafer CP from contacting the Bernoulli chuck 9711. Furthermore, unless the Bernoulli chuck 9711 is in a state where the chip CP is brought close to the vicinity of the Bernoulli chuck 9711 to a certain extent in a horizontal posture, the attraction for attracting the chip CP cannot be generated. On the other hand, the Bernoulli chuck 9711 is required to define the horizontal position of the chip CP, and therefore the guide portion 9711a is required. In contrast, in this variation, the chip CP can be brought close to the Bernoulli chuck 9711 from the inner side of the guide portion 9711a to the Bernoulli chuck 9711 in a horizontal posture. Therefore, even if the guide portion 9711a is provided, the chip CP can be attracted to the Bernoulli chuck 9711. Next, the protruding chip CP is delivered to the Bernoulli chuck 9711. That is, the picking mechanism 9111 does not support the chip CP from the vertical direction of the chip CP, but only makes the chip CP part that is bonded to the sheet TE1 protrude upward through the chip support plates 9111a1 and 9111a2, so that the bonding surface CPf of the chip CP becomes horizontal on the surface perpendicular to the vertical direction. In this way, the chip CP is prevented from contacting the guide part 9711a of the Bernoulli chuck 9711 when the chip CP part that is bonded to the sheet TE1 protrudes upward. In addition, the timing of sucking the thin film TE1 by the suction part can be after the part of the chip CP that sticks to the thin film TE1 is protruded by the chip supporting plates 9111a1 and 9111a2, and it can also be before or during the movement of the chip supporting plates 9111a1 and 9111a2 to the direction of approaching each other.
此外，檢取機構係可以具有：用以在其接合面CPf直交於鉛直方向之面而以水平之姿勢來支持晶片CP之3個以上之晶片支持插銷、以及成為用以由薄片來剝離晶片CP之剝離構件之剝離用插銷。例如圖34（B）所示，檢取機構10111係具有：4個之晶片支持插銷10111a、以及4個之剝離用插銷10111b。在此，檢取機構10111係藉由獨立地移動4個之晶片支持插銷10111a和4個之剝離用插銷10111b至這些之延伸方向而具備插銷驅動部10111g。此外，檢取機構9111係具有：以薄片擔架於晶片支持插銷10111a之前端部之狀態，吸引藉由晶片支持插銷10111a而包圍之部分的吸引部（未圖示）。In addition, the picking mechanism may include: three or more chip support pins for supporting the chip CP in a horizontal position at a surface of the bonding surface CPf perpendicular to the lead vertical direction, and a peeling pin that serves as a peeling member for peeling the chip CP from the sheet. For example, as shown in FIG. 34 (B), the picking mechanism 10111 includes: four chip support pins 10111a and four peeling pins 10111b. Here, the picking mechanism 10111 is provided with a pin driving portion 10111g by independently moving the four chip support pins 10111a and the four peeling pins 10111b to the extending directions thereof. In addition, the picking mechanism 9111 has: a suction portion (not shown) that sucks the portion surrounded by the chip supporting pin 10111a in a state where the thin film is supported on the front end of the chip supporting pin 10111a.
在此，關於本變化例之晶片供應部之動作，參考圖37及圖38，同時，進行說明。此外，在圖37及圖38，關於相同於前述之變化例之同樣之構造，附加相同於圖35及圖36之相同之符號。首先，晶片供應部係在藉由檢取機構10111而交接晶片CP至伯努利（Bernoulli）夾頭9711之際，正如圖37（A）之箭號AR1001所示，藉由吸附單元9115而吸附貼合相鄰接在對向於伯努利（Bernoulli）夾頭9711之晶片CP之相鄰接之晶片CP之部分。接著，檢取機構9111係在貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，來擠壓晶片支持插銷10111a之前端部。接著，支持部驅動部10111g係正如圖37（B）之箭號AR1002所示，在貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，來擠壓剝離用插銷10111b之前端部。另一方面，支持部驅動部10111g係正如圖37（B）之箭號AR1003所示，由薄片TE1來脫離晶片支持插銷10111a之前端部。此時，在貼合於薄片TE1之晶片CP之部分中，由晶片CP開始剝離比起4個之剝離用插銷10111b之前端部之所抵接之部分還更加外側之部分。接著，檢取機構10111係正如圖38（A）之箭號AR1004所示，在貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，再度擠壓晶片支持插銷10111a之前端部。另一方面，支持部驅動部10111g係正如圖38（A）之箭號AR1005所示，由薄片TE1來脫離剝離用插銷10111b之前端部。然後，吸引部係正如圖38（A）之箭號AR1006所示，吸引薄片TE1之晶片支持板9111a1、9111a2之間之部分。接著，檢取機構10111係正如圖38（B）之箭號AR1007所示，藉由移動晶片支持插銷10111a至鉛直上方，而使得貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，上突至鉛直上方。接著，上突之晶片CP係交接至伯努利（Bernoulli）夾頭9711。也就是說，檢取機構10111係並無進行來自晶片CP之鉛直上方之晶片CP之支持，僅藉由晶片支持插銷10111a，而使得貼合薄片TE1之晶片CP之部分，進行上突，在直交於鉛直方向之面，使得晶片CP之接合面CPf，成為水平之姿勢。藉此而在上突貼合薄片TE1之晶片CP之部分之際，抑制晶片CP對於伯努利（Bernoulli）夾頭9711之導引部9711a之接觸。此外，藉由吸引部而吸引薄片TE1之時機係可以是藉由晶片支持插銷10111a而上突貼合薄片TE1之晶片CP之部分之後。Here, the operation of the chip supply unit of this variation is described with reference to FIGS. 37 and 38. In addition, in FIGS. 37 and 38, the same symbols as in FIGS. 35 and 36 are attached to the same structures as in the above-mentioned variation. First, when the chip supply unit delivers the chip CP to the Bernoulli chuck 9711 by the picking mechanism 10111, as shown by the arrow AR1001 in FIG. 37 (A), the chip supply unit adsorbs and adheres the adjacent chip CP to the chip CP facing the Bernoulli chuck 9711 by the adsorption unit 9115. Next, the picking mechanism 9111 squeezes the front end of the chip support pin 10111a at the portion of the chip CP of the Bernoulli chuck 9711 that is bonded to the sheet TE1. Next, the support driving portion 10111g squeezes the front end of the stripping pin 10111b at the portion of the chip CP of the Bernoulli chuck 9711 that is bonded to the sheet TE1 as shown by the arrow AR1002 in FIG. 37 (B). On the other hand, the support driving portion 10111g separates the front end of the chip support pin 10111a from the sheet TE1 as shown by the arrow AR1003 in FIG. 37 (B). At this time, in the portion of the chip CP bonded to the sheet TE1, the chip CP starts to peel off the portion further outside the portion abutted by the front ends of the four peeling latches 10111b. Then, the picking mechanism 10111 squeezes the front end of the chip support latch 10111a again, as shown by the arrow AR1004 in FIG. 38 (A). On the other hand, the support driving part 10111g separates the front end of the peeling latch 10111b from the sheet TE1, as shown by the arrow AR1005 in FIG. 38 (A). Then, the suction part sucks the portion between the wafer support plates 9111a1 and 9111a2 of the sheet TE1 as indicated by the arrow AR1006 in FIG. 38 (A). Then, the picking mechanism 10111 moves the wafer support pin 10111a to the vertically upward position as indicated by the arrow AR1007 in FIG. 38 (B), so that the portion of the wafer CP that is attached to the Bernoulli chuck 9711 facing the sheet TE1 protrudes to the vertically upward position. Then, the protruding wafer CP is delivered to the Bernoulli chuck 9711. That is, the picking mechanism 10111 does not support the chip CP from the vertical direction of the chip CP, but only makes the chip CP part that is bonded to the sheet TE1 protrude upward by the chip support pin 10111a, so that the bonding surface CPf of the chip CP becomes horizontal on the surface perpendicular to the vertical direction. In this way, when the chip CP part that is bonded to the sheet TE1 protrudes upward, the chip CP is prevented from contacting the guide part 9711a of the Bernoulli chuck 9711. In addition, the timing of sucking the sheet TE1 by the suction part can be after the chip CP part that is bonded to the sheet TE1 protrudes upward by the chip support pin 10111a.
在實施形態1，例如圖39（A）所示，檢取機構12111係可以具有：在前端部來具有鉤狀之頭頂部12111c、12111d之2個之晶片支持板12111a1、12111a2。在此，晶片支持板12111a1、12111a2係分別具有長尺板狀之本體部12111b和頭頂部12111c、12111d。此外，檢取機構12111係具備：藉由移動2個之晶片支持板12111a1、12111a2至直交於這些之延伸方向之方向而相互地接近2個之晶片支持板12111a1、12111a2的支持板驅動部12111g。In the first embodiment, as shown in FIG. 39 (A), for example, the picking mechanism 12111 may include two wafer support plates 12111a1 and 12111a2 each having a hook-shaped top portion 12111c and 12111d at the front end. Here, the wafer support plates 12111a1 and 12111a2 each include a long plate-shaped body portion 12111b and top portions 12111c and 12111d. In addition, the picking mechanism 12111 includes a support plate driving portion 12111g that moves the two wafer support plates 12111a1 and 12111a2 in a direction perpendicular to the extending direction thereof so as to approach the two wafer support plates 12111a1 and 12111a2 to each other.
頭頂部12111c、12111d係分別正如圖39（B）所示，具有突出在互相地對向於長尺之側之突出部12111e、12111f。在此，正如圖39（C）之箭號AR1201所示，支持板驅動部12111g係在移動晶片支持板12111a1、12111a2至相互地接近之方向之時，成為突出部12111e、12111f中之某一邊來嵌入至其他邊之間之狀態。此外，頭頂部12111c、12111d之形狀係並非限定在圖39（A）乃至圖39（C）所示之形狀，如果是頭頂部12111c、12111d之某一邊之一部分來嵌入於其他邊之一部分之形狀的話，則也可以是其他之形狀。As shown in FIG39 (B), the top parts 12111c and 12111d have protrusions 12111e and 12111f protruding on the sides opposite to each other. Here, as shown by arrow AR1201 in FIG39 (C), when the chip support plates 12111a1 and 12111a2 are moved to a direction close to each other, the support plate driving part 12111g is in a state where one side of the protrusions 12111e and 12111f is embedded between the other sides. In addition, the shape of the top parts 12111c and 12111d is not limited to the shape shown in FIG39 (A) or even FIG39 (C). If a part of one side of the top parts 12111c and 12111d is embedded in a part of the other side, it can also be other shapes.
本變化例之檢取機構12111係正如圖40（A）所示，在貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，來擠壓晶片支持板12111a1、12111a2之前端部之頭頂部12111c、12111d。接著，支持板驅動部12111g係正如圖40（A）之箭號AR1201所示，藉由移動晶片支持板12111a1、12111a2至相互地接近之方向，而在頭頂部12111c、12111d，來摩擦貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分。在此，支持板驅動部12111g係正如圖40（B）所示，由Y軸方向來觀看的話，移動晶片支持板12111a1、12111a2，直到成為頭頂部12111c、12111d之間呈相互地重疊之狀態為止。藉此而成為容易由薄片TE1來剝離對向於伯努利（Bernoulli）夾頭9711之晶片CP之狀態。接著，檢取機構12111係在晶片支持板12111a1、12111a2之位置來回復到原本之位置之後，移動晶片支持板12111a1、12111a2至鉛直上方。藉此而使得貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，上突至鉛直上方，上突之晶片CP係交接至伯努利（Bernoulli）夾頭9711。The picking mechanism 12111 of this variation squeezes the tops 12111c and 12111d of the front ends of the wafer support plates 12111a1 and 12111a2 at the portion of the wafer CP of the Bernoulli chuck 9711 facing the wafer TE1 as shown in FIG40(A). Then, the support plate driving part 12111g moves the wafer support plates 12111a1 and 12111a2 in a direction approaching each other as shown in the arrow AR1201 of FIG40(A), and frictionally fits the portion of the wafer CP of the Bernoulli chuck 9711 facing the wafer TE1 at the tops 12111c and 12111d. Here, the support plate driving part 12111g moves the wafer support plates 12111a1 and 12111a2 as shown in FIG. 40 (B) when viewed from the Y-axis direction until the top portions 12111c and 12111d overlap each other. This makes it easy for the wafer CP facing the Bernoulli chuck 9711 to be peeled off by the sheet TE1. Then, the picking mechanism 12111 moves the wafer support plates 12111a1 and 12111a2 to be directly above the wafer support plates 12111a1 and 12111a2 after the wafer support plates 12111a1 and 12111a2 return to their original positions. As a result, the portion of the chip CP that is bonded to the Bernoulli chuck 9711 facing the sheet TE1 protrudes upward to the vertical position, and the protruding chip CP is connected to the Bernoulli chuck 9711.
此外，晶片供應部係例如圖41（A）所示，可以具備檢取機構13111，該檢取機構13111係具有剝離構件13111a1、13111a2和剝離構件驅動部13111g，該剝離構件13111a1、13111a2係用以和晶片支持插銷13111h一起摩擦貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分而由薄片TE1來剝離晶片CP。晶片支持插銷13111h係例如設置4個。此外，晶片支持插銷13111h之數目係可以是3個，並且，也可以是5個以上。晶片支持插銷13111h係在其接合面CPf直交於鉛直方向之面，以水平之姿勢，來支持晶片CP。剝離構件13111a1、13111a2係相同於前述之晶片支持板12111a1、12111a2之同樣之構造，具有長尺板狀之本體部13111b和前端部之頭頂部13111c、13111d。此外，頭頂部13111c、13111d之形狀係並非限定在圖41（A）所示之形狀，如果是頭頂部13111c、13111d之某一邊之一部分來嵌入於其他邊之一部分之形狀的話，則也可以是其他之形狀。In addition, the wafer supply unit may include a pick-up mechanism 13111, as shown in FIG. 41 (A), wherein the pick-up mechanism 13111 includes peeling members 13111a1, 13111a2 and a peeling member driving unit 13111g, wherein the peeling members 13111a1, 13111a2 are used to frictionally fit the portion of the wafer CP of the Bernoulli chuck 9711 facing the sheet TE1 together with the wafer support pin 13111h to peel the wafer CP from the sheet TE1. For example, four wafer support pins 13111h are provided. In addition, the number of wafer support pins 13111h may be three, and may also be five or more. The chip support pin 13111h supports the chip CP in a horizontal position at a surface of the bonding surface CPf perpendicular to the lead direction. The peeling members 13111a1 and 13111a2 are the same structure as the aforementioned chip support plates 12111a1 and 12111a2, and have a long plate-shaped body 13111b and a top portion 13111c and 13111d at the front end. In addition, the shape of the top portion 13111c and 13111d is not limited to the shape shown in Figure 41 (A). If a part of one side of the top portion 13111c and 13111d is embedded in a part of the other side, it can also be other shapes.
在此，關於本變化例之晶片供應部之動作，參考圖41及圖42，同時，進行說明。首先，檢取機構13111係正如圖41（A）之箭號AR1302所示，由待機位置開始至貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，接近剝離構件13111a1、13111a2之頭頂部13111c、13111d。接著，檢取機構13111係藉著以頭頂部13111c、13111d擠壓於薄片TE1之狀態，正如圖41（B）之箭號AR1303所示，移動剝離構件13111a1、13111a2至相互地接近之方向，而在頭頂部13111c、13111d，摩擦貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分。此外，在圖41（B）之狀態，晶片支持插銷13111h之前端部係可以配置在薄片TE1之附近。可以藉此而安定晶片CP之姿勢。接著，檢取機構13111係正如圖42（A）所示，使得剝離構件13111a1、13111a2之位置，回復到待機位置。然後，晶片供應部係正如圖42（A）之箭號AR1304所示，藉由移動晶片支持插銷13111h至鉛直上方，而使得晶片支持插銷13111h之前端部，接觸到薄片TE1。然後，晶片供應部係正如圖42（B）之箭號AR1305所示，藉由晶片支持插銷13111h而上突貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分至鉛直上方。接著，上突之晶片CP係移載至伯努利（Bernoulli）夾頭9711。此時，晶片供應部係正如圖42（B）之箭號AR1306所示，藉由移動剝離構件13111a1、13111a2至鉛直下方，而回復到待機位置。Here, the operation of the chip supply unit of this variation is described with reference to FIG41 and FIG42. First, the picking mechanism 13111 starts from the standby position and moves to the portion of the chip CP of the Bernoulli chuck 9711 that is bonded to the sheet TE1, and approaches the top portions 13111c and 13111d of the peeling members 13111a1 and 13111a2, as shown by the arrow AR1302 in FIG41 (A). Next, the picking mechanism 13111 moves the peeling members 13111a1 and 13111a2 to the direction of approaching each other, while the top parts 13111c and 13111d are pressed against the sheet TE1, as shown by the arrow AR1303 in FIG. 41 (B), and the top parts 13111c and 13111d are frictionally fitted to the portion of the chip CP of the Bernoulli chuck 9711 facing the sheet TE1. In addition, in the state of FIG. 41 (B), the front end of the chip support pin 13111h can be arranged near the sheet TE1. This can stabilize the posture of the chip CP. Next, the picking mechanism 13111 returns the positions of the stripping members 13111a1 and 13111a2 to the standby position as shown in FIG42 (A). Then, the chip supply unit moves the chip support pin 13111h to the vertical position as shown by the arrow AR1304 in FIG42 (A), so that the front end of the chip support pin 13111h contacts the sheet TE1. Then, the chip supply unit protrudes upward and fits the portion of the chip CP of the Bernoulli chuck 9711 facing the sheet TE1 to the vertical position as shown by the arrow AR1305 in FIG42 (B). Next, the protruding chip CP is transferred to the Bernoulli chuck 9711. At this time, the chip supply unit returns to the standby position by moving the peeling members 13111a1 and 13111a2 to directly below the lead as indicated by the arrow AR1306 in FIG. 42(B).
如果是藉由本構造的話，則檢取機構9111、12111係藉由晶片支持板9111a1、9111a2、12111a1、12111a2，而在其接合面CPf直交於鉛直方向之面，以水平之姿勢，來支持晶片CP。此外，檢取機構10111、13111係藉由晶片支持插銷10111a、13111h，而在其接合面CPf直交於鉛直方向之面，以水平之姿勢，來支持晶片CP。可以藉此而使得檢取機構9111、10111、12111、13111，在其接合面CPf直交於鉛直方向之面來維持水平姿勢之狀態，移載晶片CP至伯努利（Bernoulli）夾頭9711。因此，檢取機構9111、10111、12111、13111係在移載晶片CP至伯努利（Bernoulli）夾頭9711之際，抑制起因於晶片CP之姿勢傾斜而發生伯努利（Bernoulli）夾頭9711之操作失誤。According to this structure, the pick-up mechanisms 9111 and 12111 support the wafer CP in a horizontal position at the surface of the bonding surface CPf perpendicular to the lead direction through the wafer support plates 9111a1, 9111a2, 12111a1, and 12111a2. In addition, the pick-up mechanisms 10111 and 13111 support the wafer CP in a horizontal position at the surface of the bonding surface CPf perpendicular to the lead direction through the wafer support pins 10111a and 13111h. In this way, the pick-up mechanisms 9111, 10111, 12111, and 13111 can be kept in a horizontal position at the surface of the bonding surface CPf perpendicular to the lead direction, and the wafer CP can be transferred to the Bernoulli chuck 9711. Therefore, the picking mechanisms 9111, 10111, 12111, and 13111 are used to suppress operation errors of the Bernoulli chuck 9711 caused by the tilt of the chip CP when transferring the chip CP to the Bernoulli chuck 9711.
此外，如果是藉由本構造的話，則檢取機構9111係在移載晶片CP至伯努利（Bernoulli）夾頭9711之際，在晶片支持板9111a1、9111a2、12111a1、12111a2之前端部，摩擦貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分。此外，檢取機構10111係在移載晶片CP至伯努利（Bernoulli）夾頭9711之際，在貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分，來擠壓剝離用插銷10111b之前端部。此外，檢取機構13111係在移載晶片CP至伯努利（Bernoulli）夾頭9711之際，在剝離構件13111a1、13111a2之頭頂部13111c、13111d，摩擦貼合對向於薄片TE1之伯努利（Bernoulli）夾頭9711之晶片CP之部分。藉此而成為容易由薄片TE1來剝離對向於伯努利（Bernoulli）夾頭9711之晶片CP之狀態，因此，具有所謂由薄片TE1開始至伯努利（Bernoulli）夾頭9711而順暢地移載晶片CP之優點。In addition, according to the present structure, the picking mechanism 9111 frictionally fits the front end of the wafer support plates 9111a1, 9111a2, 12111a1, 12111a2 against the portion of the wafer CP of the Bernoulli chuck 9711 facing the sheet TE1 when the wafer CP is transferred to the Bernoulli chuck 9711. In addition, the picking mechanism 10111 squeezes the front end of the stripping latch 10111b against the portion of the wafer CP of the Bernoulli chuck 9711 facing the sheet TE1 when the wafer CP is transferred to the Bernoulli chuck 9711. In addition, when the pick-up mechanism 13111 transfers the chip CP to the Bernoulli chuck 9711, the tops 13111c and 13111d of the peeling members 13111a1 and 13111a2 frictionally fit the chip CP of the Bernoulli chuck 9711 facing the sheet TE1. This makes it easy to peel the chip CP facing the Bernoulli chuck 9711 from the sheet TE1, and thus has the advantage of smoothly transferring the chip CP from the sheet TE1 to the Bernoulli chuck 9711.
此外，在前述之變化例，關於在伯努利（Bernoulli）夾頭9711來設置矩形框狀之導引部9711a之例子而進行說明，但是，導引部之形狀係並非限定於此。例如圖43（A）所示，導引部12711a係能夠是以在伯努利（Bernoulli）夾頭9711來保持晶片CP之狀態而設置在包圍伯努利（Bernoulli）夾頭9711之晶片CP之2個之角部之部分之平面俯視L字形。或者是正如圖43（B）所示，導引部13711a係能夠是以在伯努利（Bernoulli）夾頭9711來保持晶片CP之狀態而設置在圍繞伯努利（Bernoulli）夾頭9711之晶片CP之部位之複數個部位之插銷狀。In addition, in the above-mentioned variation, the example of providing the rectangular frame-shaped guide portion 9711a on the Bernoulli chuck 9711 is described, but the shape of the guide portion is not limited to this. For example, as shown in FIG. 43 (A), the guide portion 12711a can be provided at two corners of the chip CP of the Bernoulli chuck 9711 in a state where the Bernoulli chuck 9711 holds the chip CP, and is L-shaped in a plane view. Alternatively, as shown in FIG. 43 (B), the guide portion 13711a can be provided at a plurality of locations of the chip CP of the Bernoulli chuck 9711 in a state where the Bernoulli chuck 9711 holds the chip CP.
此外，在使用前述之圖26乃至圖32而說明之變化例之晶片安裝系統5，可以具備第2晶片搬送部（未圖示），該第2晶片搬送部係和第1晶片搬送部5039一起搬送晶片CP，直到移載由晶片供應部5011所供應之晶片CP至第1晶片搬送部5039之第1晶片保持部5393之位置為止。在該狀態下，可以縮短第1晶片搬送部5039之平板5391和臂件5394之長度，可以使得第1晶片搬送部5039，成為小型化。In addition, the wafer mounting system 5 of the variation described using the aforementioned FIG. 26 to FIG. 32 may be provided with a second wafer transport unit (not shown) that transports the wafer CP together with the first wafer transport unit 5039 until the wafer CP supplied by the wafer supply unit 5011 is transferred to the position of the first
在實施形態1，晶片供應部係可以具備前述之檢取機構9111、10111、12111、13111。在該狀態下，檢取機構9111、10111、12111、13111係可以在移載晶片CP至第1晶片保持部512之際，移動晶片支持插銷10111a、13111h或晶片支持板9111a1、9111a2、12111a1、12111a2，直到晶片支持插銷10111a、13111h之前端部或晶片支持板9111a1、9111a2、12111a1、12111a2之前端部配置在比起第1晶片保持部512還更加上方之鉛直上方為止。可以藉由第1晶片保持部512而保持例如剝離晶片CP之晶片支持插銷10111a、13111h之外側之薄片TE1之部分。In the first embodiment, the chip supply unit may include the aforementioned pick-up mechanism 9111, 10111, 12111, 13111. In this state, the pick-up mechanism 9111, 10111, 12111, 13111 may move the chip support pins 10111a, 13111h or the chip support plates 9111a1, 9111a2, 12111a1, 12111a2 when transferring the chip CP to the first
在各實施形態之晶片供應部，可以是切出晶片CP至上方之構造，並且，也可以是切出晶片CP至下方之構造。The chip supply unit in each embodiment may be configured to cut the chip CP upward, and may also be configured to cut the chip CP downward.
在實施形態2，晶片供應部係可以藉由接合面CPf來朝向鉛直上方側之姿勢而保持貼合相反於複數個之晶片CP各個之接合面CPf側之相反側之薄片TE。在該狀態下，第2晶片搬送部係可以藉由成為伯努利（Bernoulli）夾頭之第2晶片保持部，而使得以檢取機構來切出之1個之晶片CP，以非接觸狀態，來保持於其接合面CPf，無進行反轉，仍然直接地交接至第1晶片搬送部。在此，第1晶片搬送部係可以是成為例如使用圖26及圖27而說明之變化例之轉盤之第1晶片搬送部5039。In the second embodiment, the chip supply unit can hold the sheet TE on the opposite side of the bonding surface CPf of each of the plurality of chips CP by the bonding surface CPf facing the upper side. In this state, the second chip conveying unit can hold the chip CP cut out by the picking mechanism on its bonding surface CPf in a non-contact state by the second chip holding unit that becomes a Bernoulli chuck, and directly transfer it to the first chip conveying unit without reversing. Here, the first chip conveying unit can be the first chip conveying unit 5039 that becomes a turntable of the variation example described using, for example, FIG. 26 and FIG. 27.
在各實施形態以及使用圖26乃至圖43而說明之各變化例，可以具備第1晶片搬送部，該第1晶片搬送部係具有可以成為：在晶片CP之周圍部而得到由鉛直下方側開始懸掛之狀態以及由晶片CP開始脫離之狀態之複數個掛鉤。本變化例之第1晶片搬送部係例如圖44所示，具有：搬送部本體16511、固定於搬送部本體16511之伯努利（Bernoulli）夾頭16711、以及正如箭號AR1604所示而驅動搬送部本體16511至鉛直方向之本體驅動部（未圖示）。此外，在圖44，關於相同於實施形態1之同樣之構造，附加相同於圖1之相同之符號。在伯努利（Bernoulli）夾頭16711，設置用以防止晶片CP之位置偏離之導引部16711a。此外，第1晶片搬送部係具有：在前端部來設置掛鉤16514a之2個之臂件16514、以及固定於搬送部本體16511並且分別自由旋轉地支持2個之臂件16514之支持部16515。此外，第1晶片搬送部係具有：在前端部來設置掛鉤16514a之2個之臂件16514、以及固定於搬送部本體16511並且分別自由旋轉地支持2個之臂件16514之支持部16515。此外，第1晶片搬送部係具有：在插通穿設於2個之臂件16514各個之基端部之長孔16514b之插銷16516來設置於前端部之移動構件16517、以及驅動移動構件16517至鉛直方向之掛鉤驅動部16518。In each embodiment and each variation described using FIG. 26 to FIG. 43, a first wafer conveying unit may be provided, and the first wafer conveying unit has a plurality of hooks that can be placed in a state of being suspended from the lower side of the lead at the periphery of the wafer CP and being released from the wafer CP. The first wafer conveying unit of this variation is, for example, shown in FIG. 44, and has a conveying unit body 16511, a Bernoulli chuck 16711 fixed to the conveying unit body 16511, and a body driving unit (not shown) that drives the conveying unit body 16511 in the lead direction as indicated by arrow AR1604. In addition, in FIG. 44, the same symbols as in FIG. 1 are attached to the same structure as in the embodiment 1. The Bernoulli chuck 16711 is provided with a guide portion 16711a for preventing the position of the wafer CP from being deviated. In addition, the first wafer conveying portion includes: two arms 16514 with hooks 16514a provided at the front end, and a support portion 16515 fixed to the conveying portion body 16511 and supporting the two arms 16514 so as to be freely rotatable. In addition, the first wafer conveying portion includes: two arms 16514 with hooks 16514a provided at the front end, and a support portion 16515 fixed to the conveying portion body 16511 and supporting the two arms 16514 so as to be freely rotatable. In addition, the first chip transfer unit has: a moving member 16517 provided at the front end portion by a pin 16516 inserted through a long hole 16514b formed at the base end portion of each of the two arm members 16514, and a hook driving portion 16518 for driving the moving member 16517 in a vertical direction.
此外，本變化例之晶片供應部係具有：具備將貼合相鄰接在對向於薄片TE1之伯努利（Bernoulli）夾頭16711之晶片CP之相鄰接之晶片CP之部分予以吸附之吸附部16115a之吸附單元16115。此外，對向於伯努利（Bernoulli）夾頭9711之晶片CP係相當於藉由檢取機構111而切出之晶片CP。此外，相鄰接在對向於伯努利（Bernoulli）夾頭16711之晶片CP之相鄰接之晶片CP係相當於藉由檢取機構111而切出之晶片CP以外之晶片CP。吸附單元16115係正如箭號1605所示，由相反於貼合薄片TE1之晶片CP之側之相反側開始，吸附貼合相鄰接在對向於薄片TE1之伯努利（Bernoulli）夾頭16711之晶片CP之相鄰接之晶片CP之部分。In addition, the wafer supply section of this variation has a suction unit 16115 having a suction section 16115a for suctioning a portion of a wafer CP adjacent to a wafer CP bonded to a Bernoulli chuck 16711 facing the sheet TE1. In addition, the wafer CP facing the Bernoulli chuck 9711 is equivalent to the wafer CP cut out by the pickup mechanism 111. In addition, the wafer CP adjacent to the wafer CP adjacent to the Bernoulli chuck 16711 is equivalent to a wafer CP other than the wafer CP cut out by the pickup mechanism 111. As indicated by arrow 1605, the adsorption unit 16115 starts from the opposite side of the chip CP opposite to the side of the chip CP bonded to the sheet TE1, and adsorbs a portion of the chip CP adjacent to the chip CP bonded to the Bernoulli chuck 16711 opposite to the sheet TE1.
掛鉤驅動部16518係藉由正如箭號AR1602所示，將移動構件16517來移動至鉛直方向，正如箭號AR1603所示，以插銷16516作為基點，來旋轉臂件16514，而移動掛鉤16514a。掛鉤驅動部16518係在檢取機構111正如箭號AR1601所示而由複數個之晶片CP之中來切出1個之晶片CP之際，旋轉臂件16514，在晶片CP之鉛直下方側之周圍部，由鉛直下方側開始，懸掛掛鉤16514a。此時，臂件16514之掛鉤16514a係***至晶片CP之薄片TE1側之面和薄片TE1之間。藉此而即使是在以晶片CP上提至鉛直上方之狀態來使得薄片TE1貼附於晶片CP之周圍部之狀態下，也藉由掛鉤16514a而由晶片CP之周圍部開始剝離薄片TE1。接著，掛鉤驅動部16518係在晶片CP來保持於伯努利（Bernoulli）夾頭16711之時，旋轉臂件16514，由晶片CP開始脫離掛鉤16514a。The hook driving unit 16518 moves the moving member 16517 to the vertical direction as indicated by the arrow AR1602, and rotates the arm 16514 with the latch 16516 as the base point as indicated by the arrow AR1603, thereby moving the hook 16514a. When the picking mechanism 111 cuts one wafer CP from a plurality of wafers CP as indicated by the arrow AR1601, the hook driving unit 16518 rotates the arm 16514, and suspends the hook 16514a from the vertically lower side of the wafer CP around the vertically lower side. At this time, the hook 16514a of the arm 16514 is inserted between the side surface of the sheet TE1 of the chip CP and the sheet TE1. Thus, even when the chip CP is lifted up to the vertical position so that the sheet TE1 is attached to the peripheral portion of the chip CP, the sheet TE1 is peeled off from the peripheral portion of the chip CP by the hook 16514a. Then, when the chip CP is held by the Bernoulli chuck 16711, the hook drive 16518 rotates the arm 16514 to start the chip CP to be detached from the hook 16514a.
如果是藉由本構造的話，則例如即使是薄片TE1之黏著力係比較強，也可以由晶片CP之周圍部開始剝離薄片TE1，因此，抑制由於伯努利（Bernoulli）夾頭16711而造成之晶片CP之夾頭失誤之發生。此外，如果是藉由本構造的話，則以在晶片CP之鉛直上方來配置伯努利（Bernoulli）夾頭16711之狀態，在晶片CP之鉛直下方側之周圍部，由鉛直下方側開始懸掛掛鉤16514a。藉此而即使是在例如切出晶片CP之際，在晶片CP飛跳至鉛直上方之狀態下，也可以阻擋於伯努利（Bernoulli）夾頭16711，因此，也具有所謂抑制晶片CP之飛散之優點。With this structure, for example, even if the adhesion of the sheet TE1 is relatively strong, the sheet TE1 can be peeled off from the peripheral portion of the chip CP, thereby suppressing the occurrence of a chuck error of the chip CP caused by the Bernoulli chuck 16711. In addition, with this structure, the Bernoulli chuck 16711 is arranged above the lead of the chip CP, and the hook 16514a is hung from the side directly below the lead of the chip CP. Thus, even when the chip CP jumps to a position directly above the lead when the chip CP is cut out, the chip CP can be stopped by the Bernoulli chuck 16711. Therefore, the chip CP can be prevented from flying.
在本變化例，關於成為第1晶片搬送部之例子而進行說明，但是，並非限定於此，也可以是具有相同於前面敘述之同樣之構造而搬送晶片CP至第1晶片搬送部為止之第2晶片搬送部。此外，在本變化例，也可以是無伯努利（Bernoulli）夾頭16711之構造。在該狀態下，第1晶片搬送部係可以藉由複數個之掛鉤16514a，以保持晶片CP之狀態，而搬送晶片CP。In this variation, the first wafer transfer unit is described, but it is not limited to this. It can also be a second wafer transfer unit that has the same structure as described above and transfers the wafer CP to the first wafer transfer unit. In addition, in this variation, it can also be a structure without the Bernoulli chuck 16711. In this state, the first wafer transfer unit can transfer the wafer CP by holding the state of the wafer CP with a plurality of hooks 16514a.
但是，正如本變化例，在伯努利（Bernoulli）夾頭16711來設置導引部16711a之狀態下，檢取機構111係必須在伯努利（Bernoulli）夾頭16711接近於貼合晶片CP之薄片TE1之時，上提晶片CP至在相鄰接於切出對象之晶片CP無接觸到導引部16711a之程度之高度為止。此時，突出薄片TE1至接近於伯努利（Bernoulli）夾頭16711之方向而進行延伸，因此，相鄰接之晶片CP間之間隔係最好是設定成為在突出薄片TE1之時，使得相鄰接於切出對象之晶片CP之相鄰接之晶片CP無接觸到伯努利（Bernoulli）夾頭16711之程度之長度。此外，也在晶片CP之鉛直下方側之周圍部來***掛鉤16514a之狀態下，比較有利於相鄰接之晶片CP間之間隔變寬者。However, as in the present variation, when the Bernoulli chuck 16711 is used to set the guide portion 16711a, the picking mechanism 111 must lift the wafer CP to a height such that the wafer CP adjacent to the object to be cut does not touch the guide portion 16711a when the Bernoulli chuck 16711 is close to the sheet TE1 attached to the wafer CP. At this time, the protruding sheet TE1 is extended in a direction close to the Bernoulli chuck 16711, so the interval between adjacent wafers CP is preferably set to a length such that the adjacent wafer CP adjacent to the wafer CP adjacent to the object to be cut does not touch the Bernoulli chuck 16711 when the protruding sheet TE1 is used. In addition, when the hook 16514a is inserted into the peripheral portion of the side directly below the chip CP, it is more advantageous to widen the interval between adjacent chips CP.
此外，作為薄片TE1係最好是使用在伸長時而容易拓寬相鄰接之晶片CP間之間隔者。此外，可以在薄片TE1之上面，再配置晶片CP而拓寬相鄰接之晶片CP間之間隔。或者是晶片供應部係可以具備加熱部，該加熱部係在藉由檢取機構111而上提晶片CP至鉛直上方來進行切出之際，由薄片TE1之鉛直下方開始加熱薄片TE1，容易延伸薄片TE1。在此，加熱部係可以具有例如加熱器、噴出熱風之機構。此外，晶片供應部係可以具有藉由在薄片TE1來照射紅外線或紫外線而容易延伸薄片TE1之光源。In addition, it is preferable to use a sheet TE1 that can easily widen the interval between adjacent chips CP when stretched. In addition, a chip CP can be arranged on the sheet TE1 to widen the interval between adjacent chips CP. Or the chip supply unit can be equipped with a heating unit, which heats the sheet TE1 from the directly below the sheet TE1 when the chip CP is lifted up to the top by the picking mechanism 111 for cutting, so as to easily stretch the sheet TE1. Here, the heating unit can have, for example, a heater or a mechanism for spraying hot air. In addition, the chip supply unit can have a light source that can easily stretch the sheet TE1 by irradiating infrared or ultraviolet rays on the sheet TE1.
在實施形態2，第2晶片搬送部2114之第2晶片保持部2114a係可以是例如圖45所示之非接觸式夾頭17711。非接觸式夾頭17711係具備：夾頭本體17712、負壓發生部17713、超音波發生部17714、以及支持超音波發生部17714之支持構件17715。夾頭本體17712係形成流通於保持在其內部之晶片CP側（－Z方向側）之流路17712a。負壓發生部17713係藉由在夾頭本體17712之流路17712a之內，發生8kPa乃至40kPa之負壓，而吸引晶片CP。超音波發生部17714係藉由以數MHz之高頻率，來振動夾頭本體17712，而在夾頭本體17712和晶片CP之間，發生超音波，壓縮及擴散存在於該處之氣體。藉此而在夾頭本體17712之－Z方向側，形成微薄之氣體膜、也就是擠壓膜。接著，晶片CP係在夾頭本體17712之－Z方向側，維持浮出於該擠壓膜上之狀態。也就是說，非接觸式夾頭17711係藉由組合及使用由於負壓發生部17713而造成之晶片CP之吸引力以及由於超音波發生部17714而發生之超音波來造成之反作用力，而以非接觸，來保持晶片CP。In the second embodiment, the second chip holding part 2114a of the second chip transfer part 2114 can be a non-contact chuck 17711 as shown in FIG. 45, for example. The non-contact chuck 17711 includes a chuck body 17712, a negative pressure generating part 17713, an ultrasonic generating part 17714, and a supporting member 17715 supporting the ultrasonic generating part 17714. The chuck body 17712 forms a flow path 17712a that flows on the side (-Z direction side) of the chip CP held therein. The negative pressure generating part 17713 generates a negative pressure of 8 kPa to 40 kPa in the flow path 17712a of the chuck body 17712 to attract the chip CP. The ultrasonic wave generating unit 17714 vibrates the chuck body 17712 at a high frequency of several MHz, and generates ultrasonic waves between the chuck body 17712 and the chip CP, compressing and diffusing the gas existing there. As a result, a thin gas film, that is, an extrusion film, is formed on the -Z direction side of the chuck body 17712. Then, the chip CP is kept floating on the extrusion film on the -Z direction side of the chuck body 17712. That is, the non-contact chuck 17711 holds the chip CP in a non-contact manner by combining and using the attraction force of the chip CP caused by the negative pressure generating part 17713 and the reaction force caused by the ultrasound generated by the ultrasound generating part 17714.
此外，在本變化例，關於第2晶片搬送部之第2晶片保持部為圖45所示之非接觸式夾頭之例子而進行說明，但是，並非限定於此，例如使用圖18而說明之第1晶片搬送部4051之第1晶片保持部4512係可以是圖45所示之非接觸式夾頭。In addition, in this variation, the second chip holding portion of the second chip transport portion is described as an example of a non-contact chuck as shown in FIG. 45 , but it is not limited to this. For example, the first chip holding portion 4512 of the first chip transport portion 4051 described using FIG. 18 may be a non-contact chuck as shown in FIG. 45 .
但是，在前述之伯努利（Bernoulli）夾頭之狀態下，來自伯努利（Bernoulli）夾頭之排氣流量係比較大。因此，例如在為了除去附著於基板WT或晶片CP之微粒而在構裝結合裝置30、4030之內或者是晶片供應裝置2010、4010之內來發生氣流之狀態下，恐怕會對於該氣流之流動，產生影響。此外，也飛散搭載於晶片CP之微粒。However, in the aforementioned Bernoulli chuck state, the exhaust flow rate from the Bernoulli chuck is relatively large. Therefore, for example, in the state where airflow is generated in the assembly bonding device 30, 4030 or in the chip supply device 2010, 4010 in order to remove particles attached to the substrate WT or the chip CP, there is a possibility that the flow of the airflow will be affected. In addition, particles carried on the chip CP will also be scattered.
相對於此，如果是藉由本構造的話，則沒有來自非接觸式夾頭17711之排氣，因此，可以消除對於發生在構裝結合裝置30、4030之內或者是晶片供應裝置2010、4010之內之氣流之流動之影響。此外，如果是藉由本構造的話，則藉由以負壓發生部17713，在夾頭本體17712，來吸引晶片CP，而抑制晶片CP之位置偏離之發生。因此，具有所謂在移載晶片CP至構裝結合裝置30、4030之頭頂部33H、4033H之前而不需要調整晶片CP之姿勢之優點。此外，吸引附著於晶片CP之微粒，除去附著於晶片CP之微粒。此外，本構造之非接觸式夾頭17711係也具有比起伯努利（Bernoulli）夾頭還更加高之吸附力之優點。In contrast, if the present structure is used, there is no exhaust from the non-contact chuck 17711, so the influence on the flow of air in the assembly and bonding device 30, 4030 or the chip supply device 2010, 4010 can be eliminated. In addition, if the present structure is used, the chip CP is attracted by the negative pressure generating portion 17713 in the chuck body 17712, thereby suppressing the position deviation of the chip CP. Therefore, there is an advantage that there is no need to adjust the position of the chip CP before transferring the chip CP to the top portion 33H, 4033H of the assembly and bonding device 30, 4030. In addition, the particles attached to the chip CP are attracted and removed. In addition, the non-contact chuck 17711 of this structure also has the advantage of having a higher suction force than the Bernoulli chuck.
在各實施形態，由薄片來切出晶片CP之切出方法係可以是藉由針頭而由下往上推擠之方法、吸附凹凸面而減少接觸面積之方法、藉由以板狀之構件而摩擦相反於晶片CP之接合面CPf之相反側之面來進行剝離之方法、照射紫外線而降低薄片之黏著力之方法、加熱薄片而降低薄片之黏著力之方法、或者是其他之任何一種方法。此外，並無限定在由薄片來切出晶片CP之方法，即使是切出載置於盤體上之晶片之方法，也是有效於前述之各種方法。此外，作為薄片係可以使用：在貼合薄片之晶片CP之側且具有黏著性之面，塗佈在照射紫外線之時而進行發泡來降低黏著力之黏著材料。此外，可以在薄片來照射紫外線而降低黏著力之狀態下，在檢取機構由貼合於薄片之複數個之元件開始切出至少1個之元件之際，具有在薄片來照射紫外線之紫外線照射部。此外，檢取機構係可以具有對於紫外線呈透明之玻璃工具（未圖示），可以藉由以玻璃工具呈朝上地擠壓貼合薄片之晶片CP之部分之狀態，使得紫外線照射部，入射紫外線至玻璃工具內。在該狀態下，傳播於玻璃工具內而由玻璃工具之薄片側開始放射之紫外線係照射於薄片，降低薄片之黏著力。此外，檢取機構係可以在貼合薄片TE之晶片CP之部分來照射紫外線之後，藉由以針頭來上突該部分，或者是以剝離構件來摩擦該部分，而切出晶片CP。此外，檢取機構係可以在貼合薄片TE之晶片CP之部分來照射紫外線之後，使得第1晶片搬送部或第2晶片搬送部，藉由第1晶片保持部或第2晶片保持部而保持貼合於該部分之晶片CP，進行檢取。In each embodiment, the method of cutting out the chip CP from the thin sheet may be a method of pushing from bottom to top by a needle, a method of reducing the contact area by adsorbing the concave and convex surface, a method of peeling off by rubbing the surface opposite to the bonding surface CPf of the chip CP with a plate-like component, a method of reducing the adhesion of the thin sheet by irradiating ultraviolet rays, a method of reducing the adhesion of the thin sheet by heating the thin sheet, or any other method. In addition, the method of cutting out the chip CP from the thin sheet is not limited, and even a method of cutting out a chip placed on a disk is effective for the aforementioned methods. In addition, as a thin sheet, an adhesive material that foams when irradiated with ultraviolet rays to reduce the adhesion can be applied on the adhesive surface of the side of the chip CP to which the thin sheet is bonded. In addition, the sheet may be irradiated with ultraviolet rays to reduce the adhesion, and the picking mechanism may have an ultraviolet irradiation portion that irradiates the sheet with ultraviolet rays when the picking mechanism starts to cut out at least one component from a plurality of components bonded to the sheet. In addition, the picking mechanism may have a glass tool (not shown) that is transparent to ultraviolet rays, and the ultraviolet irradiation portion may be irradiated with ultraviolet rays into the glass tool by pressing the portion of the chip CP bonded to the sheet upward with the glass tool. In this state, ultraviolet rays that propagate in the glass tool and begin to radiate from the sheet side of the glass tool are irradiated to the sheet to reduce the adhesion of the sheet. In addition, the picking mechanism may cut out the chip CP by protruding the portion with a needle or rubbing the portion with a peeling member after irradiating the portion of the chip CP bonded to the sheet TE with ultraviolet rays. In addition, the picking mechanism can irradiate the portion of the chip CP bonded to the sheet TE with ultraviolet rays, and then the first chip conveying unit or the second chip conveying unit can hold the chip CP bonded to the portion by the first chip holding unit or the second chip holding unit for picking.
也就是說，藉由在貼合薄片TE之晶片CP之部分來照射紫外線而容易由薄片TE來剝離晶片CP，因此，可以藉由檢取機構之針頭而進行上突或者是藉由剝離構件而摩擦薄片TE，來切出晶片CP。此外，可以成為在貼合薄片TE之晶片CP之部分來照射紫外線而容易由薄片TE來剝離晶片CP之狀態之後，仍然直接地藉由第1晶片搬送部或第2晶片搬送部而進行檢取。此外，可以藉由對於紫外線呈透明之玻璃工具而呈朝上地擠壓貼合薄片TE之晶片CP之部分，同時，在該部分，通過玻璃工具，照射紫外線而剝離晶片CP。此外，可以在貼合薄片TE之晶片CP之側來照射紫外線之時，使用塗佈發泡之材料者，在薄片TE來照射紫外線而容易由薄片TE來剝離晶片CP之後，可以仍然直接地藉由第1晶片搬送部或第2晶片搬送部而進行檢取。That is, the wafer CP can be easily peeled off from the wafer TE by irradiating the wafer CP with ultraviolet rays at the wafer CP portion bonded to the wafer TE, and therefore, the wafer CP can be cut out by protruding the needle of the picking mechanism or by rubbing the wafer TE with the peeling member. In addition, after the wafer CP can be easily peeled off from the wafer TE by irradiating the wafer CP with ultraviolet rays at the wafer CP portion bonded to the wafer TE, the wafer CP can be directly picked up by the first wafer conveyor or the second wafer conveyor. In addition, the wafer CP can be peeled off by irradiating the wafer CP with ultraviolet rays at the portion bonded to the wafer TE by pressing the portion upward with a glass tool transparent to ultraviolet rays. In addition, when the side of the chip CP bonded to the sheet TE is irradiated with ultraviolet rays, a foaming material can be used. After the sheet TE is irradiated with ultraviolet rays and the chip CP is easily peeled off from the sheet TE, it can still be directly picked up by the first chip conveyor or the second chip conveyor.
此外，在前述之變化例，在薄片TE1來打開孔洞之時機係可以不是在薄片TE1投入至晶片安裝系統之前。例如可以在前述之剝離用插銷10111b接觸到薄片TE1之時間點或者是剝離構件13111a1、13111a2接近至內側之時間點，在薄片TE1之剝離用插銷10111b或剝離構件13111a1、13111a2之外側之晶片支持插銷10111a、13111h之所接觸之位置，來打開孔洞。此外，可以成為在不同於檢取機構之其他位置或者是不同於晶片供應裝置10之其他裝置，同樣地剝離薄片TE1之晶片CP之外圍部並且在薄片TE1來打開孔洞的構造。In addition, in the aforementioned variation, the timing of opening the hole in the sheet TE1 may not be before the sheet TE1 is put into the chip mounting system. For example, the hole may be opened at the point in time when the aforementioned peeling pin 10111b contacts the sheet TE1 or the peeling members 13111a1, 13111a2 approach the inner side, at the position where the peeling pin 10111b of the sheet TE1 or the chip support pins 10111a, 13111h on the outer side of the peeling members 13111a1, 13111a2 contact. In addition, it is possible to adopt a structure in which the outer peripheral portion of the chip CP of the sheet TE1 is peeled off and a hole is opened in the sheet TE1 at another position other than the picking mechanism or at another device other than the chip supply device 10.
但是，正如實施形態1，在薄片TE1無形成孔洞之狀態下，有針頭111a貫通薄片TE1之狀態以及在針頭之前端部來附著包含於薄片TE1之黏著材料而該黏著材料附著於晶片CP之狀態發生。在該狀態下，在晶片CP之搬送時，該黏著材料係附著於頭頂部33H、第1晶片保持部等，或者是落下至晶片安裝系統內而成為垃圾，因此，成為問題。所以，在實施形態1，最好是在頭頂部33H、第1晶片保持部等，藉由在對應於針頭111a之接觸位置之部分，設置凹部，而在晶片CP之針頭111a之前端部之所接觸之部分，無接觸到頭頂部33H、第1晶片保持部、各台座等。However, as in the first embodiment, in a state where no hole is formed in the sheet TE1, there is a state where the needle 111a penetrates the sheet TE1 and the adhesive material contained in the sheet TE1 is attached to the front end of the needle and the adhesive material is attached to the chip CP. In this state, when the chip CP is transported, the adhesive material is attached to the head top 33H, the first chip holding part, etc., or falls into the chip mounting system and becomes garbage, which becomes a problem. Therefore, in the first embodiment, it is best to provide a recessed portion in the head top 33H, the first chip holding part, etc. corresponding to the contact position of the needle 111a, so that the portion of the chip CP that is contacted by the front end of the needle 111a does not contact the head top 33H, the first chip holding part, each seat, etc.
在前述之變化例，洗淨部5037係可以成為在載置晶片台座5036之晶片CP之部分來設置噴出水和氮、大氣等之氣體之噴出孔（未圖示）的構造。在該狀態下，洗淨部係可以藉著由噴出孔之所噴出之水和氮、大氣等之氣體而洗淨搬送至洗淨部之晶片CP之背面。In the above-mentioned variation, the cleaning section 5037 may be configured to have a nozzle (not shown) for spraying water, nitrogen, air, or other gases at the portion of the wafer CP on which the wafer stage 5036 is placed. In this state, the cleaning section may clean the back side of the wafer CP transported to the cleaning section by spraying water, nitrogen, air, or other gases from the nozzle.
在各實施形態，頭頂部33H係由其中央部開始突出吸附支柱桿而移載晶片CP至頭頂部33H的構造，可以在吸附支柱桿之內側，內藏擠壓機構，該擠壓機構係在晶片CP接合於基板WT之時，來擠壓晶片CP之中央部。最好是像這樣而成立支柱插銷和中心推擠機構之兩者。In each embodiment, the top portion 33H is configured to protrude from the center of the top portion 33H to attract the support rods and transfer the chip CP to the top portion 33H. A squeezing mechanism may be built inside the adsorption support rods to squeeze the center of the chip CP when the chip CP is bonded to the substrate WT. It is preferable to establish both the support pin and the center push mechanism in this way.
此外，在前述之實施形態和變化例，所謂「切出」係包含：藉由以針頭來進行突出而供應晶片CP、藉由吸引黏著薄片而供應晶片CP、以及藉由照射紫外線而供應晶片CP。In addition, in the aforementioned embodiments and variations, the so-called "cutting out" includes: supplying the chip CP by protruding with a needle, supplying the chip CP by attracting an adhesive sheet, and supplying the chip CP by irradiating ultraviolet rays.
1,2,3,4,5:晶片安裝系統 10,2010,3010,4010,5010:晶片供應裝置 11,2011,3011,5011:晶片供應部 30,4030:構裝結合裝置 31:台座 32:台座驅動部 33,4033:構裝結合部 33H,4033H:頭頂部 36:頭頂驅動部 51,4051,5039:第1晶片搬送部 114:蓋體 114a:孔洞 90,2090,3090,4090:控制部 111,2111,3111,9111,10111,12111,13111:檢取機構 111a,2111a,3111a:針頭 112:薄片保持框 113:保持框驅動部 119:框保持部 2115:反轉部 411,4411,8411:晶片工具 411a,411b,411c,2115f,3114f,8411b,8411c:貫通孔 413,4413,8413:頭頂本體部 431:擠壓機構 431a:擠壓部 431b:擠壓驅動部 432a:晶片支持部 432b:支持部驅動部 440:保持機構 511,4511:本體部 512,4512,5393:第1晶片保持部 513:晶片蓋體 2114:第2晶片搬送部 2114a:第2晶片保持部 2114b,3114c:滑動體 2114c,3114d:導軌 2115:反轉部 2115a:吸附頭頂部 2115b,3114b,16514:臂件 2115c:臂件驅動部 2115e,3114e,9115a:吸附部 2115g,3114g:晶片支持部 2115i,3114i:支持部驅動部 3114:第3晶片搬送部 3114a:第3晶片保持部 5036:晶片台座 5037:洗淨部 5037a:洗淨頭頂部 5038:晶片回收部 5391:平板 5392:平板驅動部 5394:臂件 6116:盤體 6116a:盤本體 6116b,7116b:凹部 6116c,7116c:支持部 6116d:連通孔 6117,7117:吸引部 7116:晶片供應頭頂部 7116a:頭頂部本體 7116d:吸引孔 8111a,8432a:吸附支柱桿 8111b,8432b:吸附支柱桿驅動部 8440:吸附孔 8617,ATE1,ATE2:黏著薄片 8711,9711,16711:伯努利（Bernoulli）夾頭 9111a1,9111a2,12111a1,12111a2:晶片支持板 9111b,13111b:本體部 9111c,9111d,10111c,10111d:頭頂部 9111e,9111f:突出部 9111g,10111g,12111g:支持部驅動部 9115:吸附單元 9711a,14711a,15711a:導引部 10111b:剝離用插銷 13111a:剝離構件 13111g:剝離構件驅動部 10111a,13111h:晶片支持插銷 16116:吸附單元 16115a:吸附部 16511:搬送部本體 16514a:掛鉤 16514b:長孔 16516:插銷 16517:移動構件 16518:掛鉤驅動部 16711a:導引部 17711:非接觸式夾頭 17712:夾頭本體 17712a:流路 17713:負壓發生部 17714:超音波發生部 17715:支持構件 CP:晶片 CPf:接合面 P61,P62:接觸部分 Pos1:移載位置 Pos2:接受位置 HA10:孔洞 TE,TE1,TE10:薄片 WT:基板 WTf:安裝面1,2,3,4,5: Wafer mounting system 10,2010,3010,4010,5010: Wafer supply device 11,2011,3011,5011: Wafer supply unit 30,4030: Assembly and coupling device 31: Base 32: Base drive unit 33,4033: Assembly and coupling unit 33H,4033H: Top part 36: Top drive unit 51,4051,5039: First wafer transport unit 114: Cover 114a: Hole 90,2 090,3090,4090:control unit 111,2111,3111,9111,10111,12111,13111:picking mechanism 111a,2111a,3111a:needle 112:sheet holding frame 113:holding frame drive unit 119:frame holding unit 2115:reversing unit 411,4411,8411:wafer tool 411a,411b,411c,2115f,3114f,8411b,8411c:through Hole 413,4413,8413: Head body 431: Extrusion mechanism 431a: Extrusion part 431b: Extrusion drive part 432a: Wafer support part 432b: Support drive part 440: Holding mechanism 511,4511: Body 512,4512,5393: First wafer holding part 513: Wafer cover 2114: Second wafer transfer part 2114a: Second wafer holding part 2114b,3114c: Sliding body 2114c,311 4d: Guide rail 2115: Reversing unit 2115a: Adsorption head top 2115b, 3114b, 16514: Arm 2115c: Arm drive unit 2115e, 3114e, 9115a: Adsorption unit 2115g, 3114g: Wafer support unit 2115i, 3114i: Support drive unit 3114: Wafer transport unit 3114a: Wafer holding unit 3114 5036: Wafer stand 5037: Cleaning unit 5037a: Cleaning head top 50 38: Wafer recovery unit 5391: Plate 5392: Plate drive unit 5394: Arm 6116: Plate body 6116a: Plate body 6116b, 7116b: Recess 6116c, 7116c: Support unit 6116d: Through hole 6117, 7117: Suction unit 7116: Wafer supply head 7116a: Head body 7116d: Suction hole 8111a, 8432a: Suction support rod 8111b, 8432b: Suction support rod Drive part 8440: Adsorption hole 8617, ATE1, ATE2: Adhesive sheet 8711, 9711, 16711: Bernoulli chuck 9111a1, 9111a2, 12111a1, 12111a2: Wafer support plate 9111b, 13111b: Body 9111c, 9111d, 10111c, 10111d: Top of head 9111e, 9111f: Protrusion 9111g, 10111g, 1 2111g: Support drive unit 9115: Adsorption unit 9711a, 14711a, 15711a: Guide unit 10111b: Stripping pin 13111a: Stripping member 13111g: Stripping member drive unit 10111a, 13111h: Wafer support pin 16116: Adsorption unit 16115a: Adsorption unit 16511: Transport unit body 16514a: Hook 16514b: Long hole 16516: Pin 16517: Move Components 16518: Hook drive 16711a: Guide 17711: Non-contact chuck 17712: Chuck body 17712a: Flow path 17713: Negative pressure generating part 17714: Ultrasonic generating part 17715: Support component CP: Chip CPf: Joint surface P61, P62: Contact part Pos1: Transfer position Pos2: Receiving position HA10: Hole TE, TE1, TE10: Sheet WT: Substrate WTf: Mounting surface
[圖1]係本發明之實施形態1之晶片安裝系統之概略構造圖； [圖2]係實施形態1之晶片搬送部之第1晶片保持部之概略平面俯視圖； [圖3（A）]係實施形態1之頭頂部之概略前視圖； [圖3（B）]係實施形態1之頭頂部之概略平面俯視圖； [圖4（A）]係顯示在實施形態1之晶片安裝系統而由晶片供應部來供應晶片之狀態之圖； [圖4（B）]係顯示在實施形態1之晶片安裝系統而晶片搬送部由晶片供應部來接受晶片之狀態之圖； [圖5（A）]係顯示在實施形態1之晶片安裝系統而晶片搬送部來搬送晶片至移載位置為止之狀態之圖； [圖5（B）]係顯示由實施形態1之晶片搬送部來移載晶片至頭頂部之狀態之圖； [圖6（A）]係顯示由實施形態1之晶片搬送部來移載晶片至頭頂部之狀態之圖； [圖6（B）]係顯示在實施形態1之頭頂部而保持晶片之狀態之圖； [圖7]係顯示實施形態1之構裝結合裝置之晶片安裝處理之狀態之圖； [圖8]係本發明之實施形態2之晶片安裝系統之概略構造圖； [圖9]係實施形態2之反轉部之概略圖； [圖10（A）]係顯示在實施形態2之晶片供應部而第2晶片搬送部來接受晶片之狀態之圖； [圖10（B）]係顯示在實施形態2之晶片供應部而第2晶片搬送部來搬送晶片之狀態之圖； [圖11（A）]係顯示在實施形態2之晶片安裝系統而藉由反轉部來反轉晶片之狀態之圖； [圖11（B）]係顯示在實施形態2之晶片安裝系統而由晶片供應部來移載晶片至第1晶片搬送部之狀態之圖； [圖12（A）]係顯示在實施形態2之晶片安裝系統而第1晶片搬送部來保持晶片之狀態之圖； [圖12（B）]係顯示在實施形態2之晶片安裝系統而第1晶片搬送部來搬送晶片至移載位置為止之狀態之圖； [圖13]係本發明之實施形態3之晶片安裝系統之概略構造圖； [圖14]係實施形態3之第2晶片搬送部之概略圖； [圖15（A）]係顯示在實施形態3之晶片供應部而第2晶片搬送部來接受晶片之狀態之圖； [圖15（B）]係顯示在實施形態3之晶片供應部而第2晶片搬送部來搬送晶片之狀態之圖； [圖16（A）]係顯示在實施形態3之晶片安裝系統而由晶片供應部來移載晶片至第1晶片搬送部之狀態之圖； [圖16（B）]係顯示在實施形態3之晶片安裝系統而移載晶片至第2晶片搬送部之狀態之圖； [圖17]係顯示在實施形態3之晶片安裝系統而第1晶片搬送部來搬送晶片之狀態之圖； [圖18]係變化例之晶片安裝系統之概略構造圖； [圖19]係變化例之頭頂部之概略圖； [圖20（A）]係顯示變化例之晶片供應部之一部分之概略前視圖； [圖20（B）]係顯示在變化例之晶片供應部而晶片來保持於黏著薄片之狀態之圖；[圖20（C）]係顯示在變化例之晶片供應部而由黏著薄片來脫離晶片之狀態之圖； [圖21（A）]係顯示變化例之晶片供應部之一部分之概略前視圖； [圖21（B）]係顯示在變化例之晶片供應部而由黏著薄片來脫離晶片之狀態之圖； [圖22（A）]係顯示變化例之構裝結合裝置之頭頂部之一部分之概略前視圖； [圖22（B）]係用以說明變化例之構裝結合裝置之頭頂部之動作之圖； [圖23（A）]係變化例之薄片之立體圖； [圖23（B）]係用以說明在使用變化例之薄片之狀態下之晶片安裝系統之動作之圖； [圖24（A）]係顯示變化例之盤體之一部分之概略剖面圖； [圖24（B）]係顯示由變化例之盤體而脫離晶片之狀態之圖； [圖25（A）]係顯示變化例之盤體之一部分之概略剖面圖； [圖25（B）]係顯示由變化例之盤體而脫離晶片之狀態之圖； [圖26]係變化例之晶片安裝系統之概略平面俯視圖； [圖27]係變化例之第1晶片搬送部之一部分之剖面圖； [圖28]係變化例之晶片安裝系統之概略側視圖； [圖29]係顯示在變化例之晶片安裝系統而由晶片供應部來供應晶片之狀態之圖； [圖29（A）]係概略平面俯視圖； [圖29（B）]係概略側視圖； [圖30（A）]係顯示在變化例之晶片安裝系統而移動晶片保持部至洗淨部之鉛直上方之狀態之概略平面俯視圖； [圖30（B）]係顯示在變化例之晶片安裝系統而移動晶片台座至洗淨頭頂部之鉛直下方之狀態之概略平面俯視圖； [圖31]係顯示在變化例之晶片安裝系統而由晶片搬送部至頭頂部來交接晶片之狀態之圖； [圖31（A）]係概略平面俯視圖； [圖31（B）]係概略側視圖； [圖32]係顯示在變化例之晶片安裝系統而由晶片搬送部至晶片回收部來交接晶片之狀態之概略平面俯視圖； [圖33]係變化例之晶片供應部之一部分之概略構造圖； [圖34（A）]係變化例之晶片供應部之一部分之概略立體圖； [圖34（B）]係其他之變化例之晶片供應部之一部分之概略立體圖； [圖34（C）]係圖34（B）所示之晶片供應部之一部分之概略平面俯視圖； [圖35]係顯示變化例之晶片供應部之一部分； [圖35（A）]係檢取機構之晶片支持板之前端部來擠壓於貼合晶片之薄片之狀態之概略剖面圖； [圖35（B）]係顯示藉由檢取機構之晶片支持板之前端部而摩擦貼合晶片之薄片之狀態之概略剖面圖； [圖36]係顯示變化例之晶片供應部之一部分； [圖36（A）]係顯示檢取機構來吸引貼合晶片之薄片之狀態之概略剖面圖； [圖36（B）]係顯示檢取機構來移載晶片至伯努利（Bernoulli）夾頭之狀態之概略剖面圖； [圖37]係顯示變化例之晶片供應部之一部分； [圖37（A）]係顯示檢取機構之晶片支持插銷之前端部來擠壓於貼合晶片之薄片之狀態之概略剖面圖； [圖37（B）]係顯示檢取機構之剝離用插銷之前端部來擠壓於貼合晶片之薄片之狀態之概略剖面圖； [圖38]係顯示變化例之晶片供應部之一部分； [圖38（A）]係顯示檢取機構來吸引貼合晶片之薄片之狀態之概略剖面圖； [圖38（B）]係顯示檢取機構來移載晶片至伯努利（Bernoulli）夾頭之狀態之概略剖面圖； [圖39（A）]係變化例之晶片供應部之一部分之概略立體圖； [圖39（B）]係變化例之晶片支持板之頭頂部之概略平面俯視圖； [圖39（C）]係在變化例之晶片支持板呈相互地接近之狀態下之頭頂部之概略平面俯視圖； [圖40（A）]係顯示藉由變化例之檢取機構之晶片支持板之前端部而摩擦貼合晶片之薄片之狀態之概略剖面圖； [圖40（B）]係圖40（A）之晶片支持板之前端部之擴大圖； [圖41]係顯示變化例之晶片供應部之一部分； [圖41（A）]係顯示檢取機構之剝離構件之前端部來接近於貼合晶片之薄片之狀態之概略剖面圖； [圖41（B）]係顯示藉由檢取機構之剝離構件而摩擦貼合晶片之薄片之狀態之概略剖面圖； [圖42]係顯示變化例之晶片供應部之一部分； [圖42（A）]係顯示檢取機構之剝離構件來遠離於貼合晶片之薄片之狀態之概略剖面圖； [圖42（B）]係顯示檢取機構來移載晶片至伯努利（Bernoulli）夾頭之狀態之概略剖面圖； [圖43（A）]係顯示變化例之伯努利（Bernoulli）夾頭和導引部之平面俯視圖； [圖43（B）]係顯示其他之變化例之伯努利（Bernoulli）夾頭和導引部之平面俯視圖； [圖44]係顯示變化例之伯努利（Bernoulli）夾頭和晶片供應部之一部分之概略剖面圖；及 [圖45]係變化例之非接觸式夾頭呈部分破斷之概略側視圖。[Figure 1] is a schematic structural diagram of the chip mounting system of the embodiment 1 of the present invention; [Figure 2] is a schematic plan view of the first chip holding portion of the chip transport portion of the embodiment 1; [Figure 3 (A)] is a schematic front view of the top of the embodiment 1; [Figure 3 (B)] is a schematic plan view of the top of the embodiment 1; [Figure 4 (A)] is a diagram showing the state of the chip mounting system of the embodiment 1 and the chip supply portion supplying the chip; [Figure 4 (B)] is a diagram showing the state of the chip mounting system of the embodiment 1 and the chip transport portion supplying the chip. [Figure 5 (A)] is a diagram showing the state of the chip supply unit receiving the chip; [Figure 5 (A)] is a diagram showing the state of the chip installation system of the implementation form 1 and the chip transport unit transporting the chip to the transfer position; [Figure 5 (B)] is a diagram showing the state of the chip being transferred to the top of the head by the chip transport unit of the implementation form 1; [Figure 6 (A)] is a diagram showing the state of the chip being transferred to the top of the head by the chip transport unit of the implementation form 1; [Figure 6 (B)] is a diagram showing the state of the chip being held at the top of the head of the implementation form 1; [Figure 7] is a diagram showing the structure of the implementation form 1 [Figure 8] is a schematic structural diagram of the chip mounting system of the second embodiment of the present invention; [Figure 9] is a schematic diagram of the reversing section of the second embodiment; [Figure 10 (A)] is a diagram showing the state of the chip supply section of the second embodiment receiving the chip; [Figure 10 (B)] is a diagram showing the state of the chip supply section of the second embodiment transporting the chip; [Figure 11 (A)] is a diagram showing the state of the chip mounting system of the second embodiment being reversed by the reversing section. Figure 11 (B) shows the state of the chip mounting system in the second embodiment, where the chip is transferred from the chip supply unit to the first chip transport unit; Figure 12 (A) shows the state of the chip mounting system in the second embodiment, where the first chip transport unit holds the chip; Figure 12 (B) shows the state of the chip mounting system in the second embodiment, where the first chip transport unit transports the chip to the transfer position; Figure 13 is a schematic structural diagram of the chip mounting system in the third embodiment of the present invention; Figure 1 4] is a schematic diagram of the second chip transport unit of the implementation form 3; [Figure 15 (A)] is a diagram showing the state of the chip supply unit in the implementation form 3 and the second chip transport unit receiving the chip; [Figure 15 (B)] is a diagram showing the state of the chip supply unit in the implementation form 3 and the second chip transport unit transporting the chip; [Figure 16 (A)] is a diagram showing the state of the chip mounting system in the implementation form 3 and the chip supply unit transferring the chip to the first chip transport unit; [Figure 16 (B)] is a diagram showing the state of the chip mounting system in the implementation form 3 and the chip loading and unloading of the chip. [Figure 17] is a diagram showing the state of the chip being transferred to the second chip transfer unit in the chip mounting system of the implementation form 3 and the first chip transfer unit transferring the chip; [Figure 18] is a schematic structural diagram of the chip mounting system of the variation; [Figure 19] is a schematic diagram of the top of the variation; [Figure 20 (A)] is a schematic front view showing a part of the chip supply unit of the variation; [Figure 20 (B)] is a diagram showing the state of the chip being held on the adhesive sheet in the chip supply unit of the variation; [Figure 20 (C)] is a diagram showing the chip in the variation [Figure 21 (A)] is a schematic front view showing a portion of the chip supply portion of the variant; [Figure 21 (B)] is a diagram showing a state where the chip is detached from the chip supply portion of the variant by the adhesive sheet; [Figure 22 (A)] is a schematic front view showing a portion of the top of the assembly and combination device of the variant; [Figure 22 (B)] is a diagram used to illustrate the movement of the top of the assembly and combination device of the variant; [Figure 23 (A)] is a three-dimensional diagram of the sheet of the variant; [Figure 2 3 (B)] is a diagram for explaining the operation of the chip mounting system in the state of using the thin film of the variant; [Figure 24 (A)] is a schematic cross-sectional view showing a portion of the disc body of the variant; [Figure 24 (B)] is a diagram showing the state of the chip being separated from the disc body of the variant; [Figure 25 (A)] is a schematic cross-sectional view showing a portion of the disc body of the variant; [Figure 25 (B)] is a diagram showing the state of the chip being separated from the disc body of the variant; [Figure 26] is a schematic top view of the chip mounting system of the variant; [Figure 27] is a schematic cross-sectional view of the disc body of the variant; [Figure 28] is a schematic side view of the chip mounting system of the variant; [Figure 29] is a diagram showing the state of the chip mounting system of the variant and the chip supply unit supplying the chip; [Figure 29 (A)] is a schematic top view; [Figure 29 (B)] is a schematic side view; [Figure 30 (A)] is a schematic top view showing the state of the chip mounting system of the variant and the chip holding unit is moved to the top of the cleaning unit; [Figure 30 (B)] is a schematic top view showing the state of the chip mounting system of the variant and the chip holding unit is moved to the top of the cleaning unit ... supply unit supplying the chip; [Figure 30 (A)] is a schematic top view showing the state of the chip mounting system of the variant and the chip holding unit is moved to the top of the cleaning unit; [Figure 30 (B)] is a schematic top view showing the state of the chip mounting system of the variant and the chip supply unit supplying the chip; [Figure 30 (A)] is a schematic top view showing the state of the chip mounting system of the variant and the chip supply unit supplying the chip; [Figure 30 (B)] is a schematic top view showing the state of the chip mounting system of the variant and the chip supply unit supplying the chip. [Figure 31] is a diagram showing the state of the chip installation system in the variant example where the chip stage is moved to the lead directly below the top of the cleaning head; [Figure 31 (A)] is a schematic plan view; [Figure 31 (B)] is a schematic side view; [Figure 32] is a schematic plan view showing the state of the chip installation system in the variant example where the chip stage is moved to the top of the cleaning head; [Figure 33] is a schematic structural diagram of a part of the chip supply unit in the variant example; [Figure 34 (A)] is a schematic three-dimensional view of a portion of the chip supply section of the variation; [Figure 34 (B)] is a schematic three-dimensional view of a portion of the chip supply section of another variation; [Figure 34 (C)] is a schematic top view of a portion of the chip supply section shown in Figure 34 (B); [Figure 35] is a schematic cross-sectional view showing a state in which the front end of the chip support plate of the picking mechanism is pressed against a thin sheet to which the chip is bonded; [Figure 35 (B)] is a schematic cross-sectional view showing a state in which the front end of the chip support plate of the picking mechanism is pressed against a thin sheet to which the chip is bonded; [Figure 36] is a schematic cross-sectional view showing a state where a thin sheet of a chip is frictionally bonded to a chip by the front end of a chip support plate; [Figure 36 (A)] is a schematic cross-sectional view showing a state where a picking mechanism is used to attract a thin sheet of a chip; [Figure 36 (B)] is a schematic cross-sectional view showing a state where a picking mechanism is used to transfer a chip to a Bernoulli chuck; [Figure 37] is a schematic cross-sectional view showing a state where a chip support pin of the picking mechanism is used to squeeze [Figure 37 (B)] is a schematic cross-sectional view showing the state of the thin film bonded to the chip; [Figure 37 (B)] is a schematic cross-sectional view showing the state of the front end of the stripping pin of the picking mechanism squeezing the thin film bonded to the chip; [Figure 38] is a part of the chip supply unit of the variation; [Figure 38 (A)] is a schematic cross-sectional view showing the state of the picking mechanism sucking the thin film bonded to the chip; [Figure 38 (B)] is a schematic cross-sectional view showing the state of the picking mechanism transferring the chip to the Bernoulli chuck; [Figure 39 (A)] is a schematic cross-sectional view showing the state of the chip of the variation. [Figure 39 (B)] is a schematic three-dimensional diagram of a portion of the wafer supply section; [Figure 39 (B)] is a schematic plan view of the top of the chip support plate of the variant; [Figure 39 (C)] is a schematic plan view of the top of the chip support plates of the variant when they are close to each other; [Figure 40 (A)] is a schematic cross-sectional diagram showing the state of the thin film of the chip being frictionally bonded by the front end of the chip support plate of the picking mechanism of the variant; [Figure 40 (B)] is an enlarged view of the front end of the chip support plate of Figure 40 (A); [Figure 41] is a diagram showing the state of the chip of the variant A portion of the supply section; [Figure 41 (A)] is a schematic cross-sectional view showing the state in which the front end of the peeling member of the picking mechanism approaches the thin sheet bonded to the chip; [Figure 41 (B)] is a schematic cross-sectional view showing the state in which the thin sheet bonded to the chip is rubbed by the peeling member of the picking mechanism; [Figure 42] is a portion of the chip supply section showing a variation; [Figure 42 (A)] is a schematic cross-sectional view showing the state in which the peeling member of the picking mechanism moves away from the thin sheet bonded to the chip; [Figure 42 (B)] is a view showing the state in which the picking mechanism transfers the chip to the Bernoulli [Figure 43 (A)] is a schematic cross-sectional view showing the state of the Bernoulli chuck; [Figure 43 (A)] is a plan view showing the Bernoulli chuck and the guide portion of the variation; [Figure 43 (B)] is a plan view showing the Bernoulli chuck and the guide portion of another variation; [Figure 44] is a schematic cross-sectional view showing a portion of the Bernoulli chuck and the chip supply portion of the variation; and [Figure 45] is a schematic side view showing a partially broken non-contact chuck of the variation.
1:晶片安裝系統1: Chip mounting system
10:晶片供應裝置10: Chip supply device
11:晶片供應部11: Chip supply department
30:構裝結合裝置30: Construction and combination device
31:台座31: Pedestal
32:台座驅動部32: Base drive unit
33:構裝結合部33: assembly joint
33H:頭頂部33H: Top of head
36:頭頂驅動部36: Head drive unit
51:第1晶片搬送部51: 1st wafer transfer unit
90:控制部90: Control Department
111:檢取機構111: Seizure Agency
111a:針頭111a: Needle
112:薄片保持框112: Sheet holding frame
113:保持框驅動部113: Holding frame drive unit
114:蓋體114: Cover
114a:孔洞114a: Hole
119:框保持部119: Frame holding part
432a:晶片支持部432a: chip support unit
432b:支持部驅動部432b: Support and drive unit
511:本體部511: Headquarters
512:第1晶片保持部512: First wafer holding portion
513:晶片蓋體513: Chip cover
AR11,AR12,AR13,AR14,AR15:箭號AR11,AR12,AR13,AR14,AR15:Arrow
CP:晶片CP:Chip
CPf:接合面CPf: Joint surface
Pos1:移載位置Pos1: Transfer position
TE:薄片TE: Thin sheet
WT:基板WT: Substrate
WTf:安裝面WTf:Mounting surface
Claims (59)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108143129A TWI839419B (en) | 2019-11-27 | 2019-11-27 | Component mounting system, component supply device, and component mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108143129A TWI839419B (en) | 2019-11-27 | 2019-11-27 | Component mounting system, component supply device, and component mounting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202121493A TW202121493A (en) | 2021-06-01 |
| TWI839419B true TWI839419B (en) | 2024-04-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108143129A TWI839419B (en) | 2019-11-27 | 2019-11-27 | Component mounting system, component supply device, and component mounting method |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI839419B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5169196A (en) * | 1991-06-17 | 1992-12-08 | Safabakhsh Ali R | Non-contact pick-up head |
| US9196520B1 (en) * | 2014-08-01 | 2015-11-24 | Freescale Semiconductor, Inc. | Tape release systems and methods for semiconductor dies |
| US9536856B2 (en) * | 2013-03-12 | 2017-01-03 | Shinkawa Ltd. | Flip chip bonder and flip chip bonding method |
-
2019
- 2019-11-27 TW TW108143129A patent/TWI839419B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5169196A (en) * | 1991-06-17 | 1992-12-08 | Safabakhsh Ali R | Non-contact pick-up head |
| US9536856B2 (en) * | 2013-03-12 | 2017-01-03 | Shinkawa Ltd. | Flip chip bonder and flip chip bonding method |
| US9196520B1 (en) * | 2014-08-01 | 2015-11-24 | Freescale Semiconductor, Inc. | Tape release systems and methods for semiconductor dies |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202121493A (en) | 2021-06-01 |
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