TWI838966B - Heat sink with indium bismuth alloy - Google Patents
Heat sink with indium bismuth alloy Download PDFInfo
- Publication number
- TWI838966B TWI838966B TW111144001A TW111144001A TWI838966B TW I838966 B TWI838966 B TW I838966B TW 111144001 A TW111144001 A TW 111144001A TW 111144001 A TW111144001 A TW 111144001A TW I838966 B TWI838966 B TW I838966B
- Authority
- TW
- Taiwan
- Prior art keywords
- heat
- heat sink
- indium
- bismuth alloy
- heat source
- Prior art date
Links
- 229910001152 Bi alloy Inorganic materials 0.000 title claims abstract description 48
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000004020 conductor Substances 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 11
- 238000012546 transfer Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 13
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000002470 thermal conductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本發明係關於一種具有銦鉍合金之散熱裝置，尤指在散熱件上設計有銦鉍合金導熱件，並以包固元件可拆的固定在熱源上，藉此達到移除熱的功效。 The present invention relates to a heat sink having an indium-bismuth alloy, in particular, a heat sink having an indium-bismuth alloy heat conductor and being detachably fixed to a heat source by a fixing element, thereby achieving the effect of removing heat.
本發明人於108年遂有創作中華民國專利公告號I709207B一案，內容主要在說明一種銦鉍合金於散熱的用途，包含：在一熱源及相鄰之一散熱端之間固定一銦鉍合金；該銦鉍合金受熱熔化為液相；以及液相之該銦鉍合金流動填充該熱源及該散熱端之間的一間隙，使液相之該銦鉍合金形成一液相導熱通道。藉由將該銦鉍合金先緻密化後再接觸該熱源，可以減少孔隙率，有效提高散熱效果。 In 2019, the inventor of the present invention created a patent publication No. I709207B in the Republic of China. The content mainly describes the use of an indium-bismuth alloy in heat dissipation, including: fixing an indium-bismuth alloy between a heat source and an adjacent heat sink; the indium-bismuth alloy melts into a liquid phase when heated; and the indium-bismuth alloy in the liquid phase flows to fill a gap between the heat source and the heat sink, so that the indium-bismuth alloy in the liquid phase forms a liquid phase heat conduction channel. By first densifying the indium-bismuth alloy and then contacting the heat source, the porosity can be reduced, effectively improving the heat dissipation effect.
I709207B一案在並沒有揭露較佳的銦鉍合金夾持結構，因此在內容中透過重物或者螺絲方式將散熱端與該熱源相結合，這樣的結合方式並不夠防止液態銦鉍合金在使用中因傾斜或震動從界面部位流出，且使用方式彈性不足，在拆裝上並不方便。 Case I709207B did not disclose the better indium-bismuth alloy clamping structure, so the heat sink was combined with the heat source by means of weights or screws. This combination method is not enough to prevent the liquid indium-bismuth alloy from flowing out of the interface due to tilting or vibration during use, and the method of use is not flexible enough, and it is not convenient to disassemble and assemble.
爰此，本發明人為解決先前技術所致問題，因而提出一種具有銦鉍合金之散熱裝置，裝置在一熱源件，包含：：一散熱件，接觸前述熱源件，並具有一包固元件；一銦鉍合金導熱件，接觸設置在該散熱件上並被該包固元件 所包圍，該銦鉍合金導熱件也接觸前述該熱源件，藉以將前述熱源件所產生之一熱能傳導至該散熱件。 Therefore, in order to solve the problems caused by the prior art, the inventors of the present invention propose a heat sink having an indium-bismuth alloy, which is installed on a heat source and comprises: a heat sink, which contacts the aforementioned heat source and has a solid-encapsulating element; an indium-bismuth alloy heat conductor, which contacts and is disposed on the heat sink and is surrounded by the solid-encapsulating element. The indium-bismuth alloy heat conductor also contacts the aforementioned heat source to transfer the heat energy generated by the aforementioned heat source to the heat sink.
進一步，該散熱件接觸前述熱源件面向該散熱件的一面設有一容置空間，該容置空間用以裝載該銦鉍合金導熱件。 Furthermore, a accommodating space is provided on the side of the heat sink that contacts the aforementioned heat source and faces the heat sink, and the accommodating space is used to load the indium-bismuth alloy heat conductive element.
更進一步說明，該散熱件之該包固元件係為一組以上卡榫，分別相鄰設置在該散熱件接觸前述熱源件一面的底部，所述卡榫具有一勾部，以該勾部可拆卸地固定在前述熱源件。 To further explain, the fixing element of the heat sink is a set of more than one latch, which are respectively arranged adjacent to each other at the bottom of the heat sink contacting the aforementioned heat source, and the latch has a hook portion, which is detachably fixed to the aforementioned heat source.
進一步，該散熱件係為一散熱鰭片、一板式熱管或一熱交換器。 Furthermore, the heat sink is a heat sink fin, a plate heat pipe or a heat exchanger.
進一步，該熱源件係為一IC晶片。又，該IC晶片係為一中央處理器晶片(CPU)、一圖形顯示卡晶片(GPU)或一通訊晶片。 Furthermore, the heat source is an IC chip. Furthermore, the IC chip is a central processing unit chip (CPU), a graphics card chip (GPU) or a communication chip.
根據上述技術特徵可達成以下功效： Based on the above technical features, the following effects can be achieved:
1.傳統半導體元件在裝設散熱鰭片時，都會塗抹一層散熱膏，多半是採用含氧化鋁、氮化硼及氧化鋅的高分子基散熱膏，主要目的是在填充界面部位的孔隙，減少熱阻，增強導熱，不同於傳統高分子基散熱膏，但金屬散熱膏一直有易流出界面部位等問題，而採用本發明的銦鉍合金導熱件，初期半導體元件自身發熱由銦鉍合金導熱件吸熱及傳遞熱，此時該銦鉍合金導熱件由固態轉為液態，當熱源冷卻後，該銦鉍合金導熱件再由液態轉回固態，固態熱傳導性更佳，持續有導熱能力。 1. When installing heat sink fins on traditional semiconductor components, a layer of heat dissipation paste is applied. Most of them use polymer-based heat dissipation paste containing aluminum oxide, boron nitride and zinc oxide. The main purpose is to fill the pores in the interface, reduce thermal resistance and enhance thermal conductivity. Unlike traditional polymer-based heat dissipation paste, metal heat dissipation paste has always had problems such as easy flow out of the interface. When the indium-bismuth alloy heat conductor of the present invention is used, the heat generated by the semiconductor component itself is initially absorbed and transferred by the indium-bismuth alloy heat conductor. At this time, the indium-bismuth alloy heat conductor changes from solid to liquid. When the heat source cools down, the indium-bismuth alloy heat conductor changes from liquid back to solid. The solid thermal conductivity is better and it continues to have thermal conductivity.
2.以該銦鉍合金導熱件做為熱介材，由於包固元件能避免熱源件和散熱件的位移，同時防止液態銦鉍合金導熱件流出界面部位，固定熱源件、散熱件和導熱件三者的位置和導熱功能，與高分子基散熱膏使用的包固元件不同處，在於多了防止液態銦鉍合金導熱件流出界面部位的設計，且提供熱傳導 係數大於50W/m2℃的銦鉍合金導熱，遠大於高分子基散熱膏的熱傳導係數5W/m2℃，藉此避免過高的溫度導致半導體元件損壞。 2. The indium bismuth alloy heat conductor is used as the heat medium. The encapsulated component can avoid the displacement of the heat source and the heat sink, and prevent the liquid indium bismuth alloy heat conductor from flowing out of the interface. The position and heat conduction function of the heat source, heat sink and heat conductor are fixed. The difference from the encapsulated component used in polymer-based thermal paste is that it has an additional design to prevent the liquid indium bismuth alloy heat conductor from flowing out of the interface, and provides a thermal conductivity coefficient of indium bismuth alloy greater than 50W/m2℃, which is much greater than the thermal conductivity coefficient of polymer-based thermal paste 5W/m2℃, thereby avoiding damage to semiconductor components caused by excessively high temperatures.
3.使用一段時間的銦鉍合金導熱件，能夠有效接合熱源件及散熱件，填補界面部位的孔隙，取代低導熱率的空氣，減少熱阻，使用過程中，該銦鉍合金導熱件中的氣泡持續釋出，更增強導熱。 3. After using the indium bismuth alloy thermal conductor for a period of time, it can effectively connect the heat source and heat sink, fill the pores at the interface, replace the air with low thermal conductivity, and reduce thermal resistance. During use, the bubbles in the indium bismuth alloy thermal conductor are continuously released, further enhancing thermal conductivity.
4.當熱源啟動初期大量發熱，熱尚未即時傳導至散熱件時，可由銦鉍合金導熱件藉由固態轉為液態的相變態，在熱傳路徑中途快速吸收熱能，此為高分子散熱膏所不具的功能，由於固態和液態銦鉍合金導熱件皆能導熱，當熱源冷卻後，該銦鉍合金導熱件再由液態轉回固態，固態熱傳導性更佳，持續有導熱能力。 4. When the heat source generates a lot of heat at the initial startup, and the heat has not yet been immediately transferred to the heat sink, the indium bismuth alloy heat conductor can quickly absorb heat energy in the middle of the heat transfer path through the phase change from solid to liquid. This is a function that polymer thermal paste does not have. Since both solid and liquid indium bismuth alloy heat conductors can conduct heat, when the heat source cools down, the indium bismuth alloy heat conductor will turn from liquid back to solid. The solid thermal conductivity is better and continues to have heat conduction capabilities.
1:散熱件 1: Heat sink
11:容置空間 11: Storage space
2:中央處理器晶片 2: Central processing unit chip
3:包固元件 3: Encapsulate the components
31:卡榫 31: Tenon
32:勾部 32: Hook
4:銦鉍合金導熱件 4: Indium-bismuth alloy thermal conductor
[第一圖]係本發明實施例之散熱件示意圖。 [Figure 1] is a schematic diagram of the heat sink of an embodiment of the present invention.
[第二圖]係本發明實施例之散熱件結合有銦鉍合金導熱件示意圖。 [Figure 2] is a schematic diagram of a heat sink combined with an indium-bismuth alloy heat conductor according to an embodiment of the present invention.
[第三圖]係本發明實施例與熱源結合示意圖。 [Figure 3] is a schematic diagram of the embodiment of the present invention combined with a heat source.
[第四圖]係本發明實施例之作動示意圖。 [Figure 4] is a schematic diagram of the operation of an embodiment of the present invention.
綜合上述技術特徵，本發明具有銦鉍合金之散熱裝置的主要功效將可於下述實施例清楚呈現。 Combining the above technical features, the main effects of the heat sink with indium-bismuth alloy of the present invention can be clearly presented in the following embodiments.
請先參閱第一圖，圖中包含有一散熱件1，在本實施例中該散熱件1係為薄式的熱散鰭片，所使用的材料可以為銅或鋁合金，可以依照使用需要去選擇材料，但並非本案所限制之條件，在本實施例中由於配合使用在半導
體產業中的一熱源件(第一圖未呈現)，該熱源件可以為一中央處理器晶片2、一圖形顯示卡晶片(GPU)或一通訊晶片，若使用純銅的材料雖然導熱度好，但都超過了中央處理器晶片對重量的限制，而且也容易氧化，所以在本實施例中，較佳的可以採用鋁合金或純鋁。
Please refer to the first figure, which includes a
請接續參閱第一圖及第二圖，先定義一X軸線及一Y軸線，在該散熱件1較短邊兩側設計有一包固元件3，該包固元件3在本實例中係為一卡榫31，該卡榫31具有一勾部32，該勾部32稍有彈性可以朝向該X軸線方向略擴張。進一步看到第二圖，在該散熱件1非鰭片那一面設有一容置空間11，該容置空間11用以裝載一銦鉍合金導熱件4，該銦鉍合金導熱件4熔點約在攝氏50-90度，屬於低熔點導熱性佳，可以很迅速地將熱傳導至該散熱件1。
Please continue to refer to the first and second figures. First, an X-axis and a Y-axis are defined. A
請參考第三圖、第四圖所示，該圖係呈現該散熱件1裝置在該中央處理器晶片2上，如圖所示，透過該勾部32的微彈性，擴張勾住該中央處理器晶片2，達到穩固接觸的功效，此時，可以清楚的看到該銦鉍合金導熱件4與該中央處理器晶片2的表面接觸，當該中央處理器晶片2運作時，溫度上升，所接觸的該銦鉍合金導熱件4吸收該中央處理器晶片2所發出的熱能，此時該銦鉍合金導熱件4由固態轉為液態或維持固態，熱能同時導到散熱件1進行散熱，當溫度下降時，該銦鉍合金導熱件4再由液態轉回固態，進而達到快速導熱、排熱的功效。由於半導體元件的尺寸都已經有所固定，因此本發明可以依照目前公規的尺寸進行客製化設計，進而適用各種實施狀態。
Please refer to the third and fourth figures, which show that the
綜合上述實施例之說明，當可充分瞭解本發明之操作、使用及本發明產生之功效，惟以上所述實施例僅係為本發明之較佳實施例，當不能以此 限定本發明實施之範圍，即依本發明申請專利範圍及發明說明內容所作簡單的等效變化與修飾，皆屬本發明涵蓋之範圍內。 Combined with the description of the above embodiments, the operation, use and effects of the present invention can be fully understood. However, the above embodiments are only the preferred embodiments of the present invention and cannot be used to limit the scope of implementation of the present invention. That is, simple equivalent changes and modifications made according to the scope of the patent application and the content of the invention description are all within the scope of the present invention.
1:散熱件 1: Heat sink
2:中央處理器晶片 2: Central processing unit chip
3:包固元件 3: Encapsulate the components
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111144001A TWI838966B (en) | 2022-11-17 | 2022-11-17 | Heat sink with indium bismuth alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111144001A TWI838966B (en) | 2022-11-17 | 2022-11-17 | Heat sink with indium bismuth alloy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI838966B true TWI838966B (en) | 2024-04-11 |
| TW202422812A TW202422812A (en) | 2024-06-01 |
Family
ID=91618509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111144001A TWI838966B (en) | 2022-11-17 | 2022-11-17 | Heat sink with indium bismuth alloy |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI838966B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867793A (en) * | 2012-08-14 | 2013-01-09 | 日月光半导体制造股份有限公司 | Thermal interface material and semiconductor packaging structure |
| TW201419959A (en) * | 2012-11-06 | 2014-05-16 | Powertech Technology Inc | Combination type memory card package without molding process and substrate |
| TW202226509A (en) * | 2020-12-18 | 2022-07-01 | 美商英特爾公司 | Shield structures in microelectronic assemblies having direct bonding |
-
2022
- 2022-11-17 TW TW111144001A patent/TWI838966B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102867793A (en) * | 2012-08-14 | 2013-01-09 | 日月光半导体制造股份有限公司 | Thermal interface material and semiconductor packaging structure |
| TW201419959A (en) * | 2012-11-06 | 2014-05-16 | Powertech Technology Inc | Combination type memory card package without molding process and substrate |
| TW202226509A (en) * | 2020-12-18 | 2022-07-01 | 美商英特爾公司 | Shield structures in microelectronic assemblies having direct bonding |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5237254B2 (en) | HEAT CONDUCTIVE MEMBER, ELECTRONIC DEVICE, AND METHOD OF USING THE HEAT CONDUCTIVE MEMBER | |
| JP5579234B2 (en) | Electronic circuit component cooling structure and inverter device using the same | |
| KR100836305B1 (en) | Thermoelectric module | |
| TW200301814A (en) | Optimised use of PCMS in cooling devices | |
| TW200528014A (en) | Variable density graphite foam heat sink | |
| JP4735446B2 (en) | Semiconductor device | |
| JP2004071969A (en) | Thermoelectric cooling apparatus | |
| JP2005260237A (en) | Module for cooling semiconductor element | |
| TWI838966B (en) | Heat sink with indium bismuth alloy | |
| TW201212802A (en) | Heat dissipation apparatus | |
| CN112788916B (en) | Separated heat exchange module and composite thin layer heat conduction structure | |
| TW202422812A (en) | Heat sink with indium bismuth alloy | |
| JP4391351B2 (en) | Cooling system | |
| JP2008004688A (en) | Semiconductor package | |
| JP4430451B2 (en) | Semiconductor device heat dissipation device | |
| TW202301073A (en) | Storage device with active heat dissipation | |
| TWM617525U (en) | Storage device with active heat dissipation | |
| US20070289313A1 (en) | Thermosiphon with thermoelectrically enhanced spreader plate | |
| Chau et al. | Feasibility study of using solid state refrigeration technologies for electronic cooling | |
| CN217306113U (en) | Storage device with active heat dissipation function | |
| JP5170870B2 (en) | Cooling system | |
| CN112987463B (en) | Optical machine and laser projection equipment | |
| TWM621428U (en) | Heat conduction device for electronic device | |
| JP2000227821A (en) | Cooling device for electronic component | |
| CN115547373A (en) | Storage device with active heat dissipation function |