TWI836245B - Control method of photolithography device, photolithography device and article manufacturing method - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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Abstract
本發明涉及光刻裝置之控制方法、光刻裝置以及物品製造方法。提供有利於提高基板的位置測量的準確度的技術。光刻裝置之控制方法具有:取得程序,其為由攝像部對基板的測量區域進行攝像而得到影像者;計算程序,其為計算與得到的所述影像的熵有關的評價值者;以及登錄程序,其為在計算出的前述評價值滿足預定的基準的情況下,將前述影像的資訊登錄為用於基板的位置測量的資訊者。The present invention relates to a control method of a photolithography device, a photolithography device and an article manufacturing method. Provide technology that helps improve the accuracy of position measurement of substrates. The control method of the lithography apparatus includes: an acquisition program that captures an image of a measurement area of a substrate by an imaging unit; a calculation program that calculates an evaluation value related to the entropy of the obtained image; and a login program. A program for registering the information of the image as information used for position measurement of the substrate when the calculated evaluation value satisfies a predetermined criterion.
Description
本發明涉及光刻裝置之控制方法、光刻裝置及物品製造方法。The present invention relates to a control method of a photolithography apparatus, a photolithography apparatus and an article manufacturing method.
在專利文獻1中,公開了一種將任意的圖案預先登錄為標記,使用所登錄的圖案測量基板的位置的技術。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特開2006-032521號公報Patent document 1: Japanese Patent Application Publication No. 2006-032521
[發明要解決的課題][Problems to be solved by the invention]
在被登錄為標記的圖案的形狀任意的情況下,根據其形狀,由於測量系統的透鏡像差的影響,測量準確度可能降低。特別,在圖案的形狀相對於測量中心非對稱地分佈的情況下,受到由相對於測量中心以各向同性擴展的透鏡像差引起的失真的影響。即,在圖案的形狀相對於測量中心非對稱的情況下,在圖案的一方的單側產生的失真量和在另一方的單側產生的失真量不同。因此,根據送入的圖案的位置不同而圖案失真的量發生變化,測量線性度(linearity)降低。另外,在可辨識為標記的圖案的資訊量少的情況下,受到電噪等的影響,測量再現性以及測量線性度都降低。In the case where the shape of the pattern registered as the mark is arbitrary, the measurement accuracy may be reduced due to the influence of the lens aberration of the measurement system depending on the shape. In particular, when the shape of the pattern is distributed asymmetrically with respect to the measurement center, it is affected by the distortion caused by the lens aberration that expands isotropically with respect to the measurement center. That is, when the shape of the pattern is asymmetrical with respect to the measurement center, the amount of distortion generated on one side of the pattern is different from the amount of distortion generated on the other side. Therefore, the amount of pattern distortion changes depending on the position of the input pattern, and the measurement linearity is reduced. In addition, when the amount of information that can be recognized as a mark pattern is small, the measurement reproducibility and measurement linearity will be reduced due to the influence of electrical noise, etc.
本發明例如提供有利於提高基板的位置測量的準確度的技術。 [課題的解決手段] For example, the present invention provides a technology that is useful for improving the accuracy of position measurement of a substrate. [Solution to the problem]
根據本發明的第1方案,提供一種光刻裝置之控制方法,其具有:取得程序,其為由攝像部對基板的測量區域進行攝像而得到影像者;計算程序,其為計算與得到的前述影像的熵有關的評價值者;以及登錄程序,其為在計算出的前述評價值滿足預定的基準的情況下,將前述影像的資訊登錄為用於基板的位置測量的資訊者。According to a first aspect of the present invention, there is provided a control method of a lithography apparatus, which includes: an acquisition program that captures an image of a measurement area of a substrate by an imaging unit; and a calculation program that calculates and obtains the aforementioned an evaluation value related to the entropy of the image; and a registration program that registers the information of the image as information used for position measurement of the substrate when the calculated evaluation value satisfies a predetermined criterion.
根據本發明的第2方案,提供一種光刻裝置,其具有:保持部,其保持基板;攝像部,其對由前述保持部保持的前述基板的測量區域進行攝像;以及處理部,其處理由前述攝像部得到的前述影像;前述處理部計算與前述影像的熵有關的評價值,在計算出的前述評價值滿足預定的基準的情況下,將前述影像的資訊登錄為用於基板的位置測量的資訊。According to a second aspect of the present invention, there is provided a photolithography apparatus, which includes: a holding part that holds a substrate; an imaging part that takes an image of a measurement area of the substrate held by the holding part; and a processing part that processes the The image obtained by the imaging unit; the processing unit calculates an evaluation value related to the entropy of the image, and when the calculated evaluation value meets a predetermined standard, registers the information of the image as used for position measurement of the substrate information.
根據本發明的第3方案,提供一種物品製造方法,其具有:使用上述第2側面所涉及的光刻裝置在基板上形成圖案的程序;以及進行形成有前述圖案的前述基板的加工的程序;在前述物品製造方法中,從進行前述加工後的前述基板製造物品。 [發明的效果] According to the third aspect of the present invention, there is provided a method for manufacturing an article, which comprises: a procedure for forming a pattern on a substrate using the photolithography apparatus involved in the second aspect; and a procedure for processing the substrate on which the pattern is formed; in the method for manufacturing an article, an article is manufactured from the substrate after the processing. [Effect of the invention]
根據本發明,例如,能夠提供有利於提高基板的位置測量的準確度的技術。According to the present invention, for example, it is possible to provide a technique that is advantageous for improving the accuracy of position measurement of a substrate.
以下,參照附圖來詳細說明實施方式。此外,(申請專利範圍所涉及的發明不限於以下的實施方式)。在實施方式中記載了多個特徵,但並非所有這些多個特徵都是發明所必須的,另外,多個特徵也可以任意地組合。而且,在附圖中,對相同或同樣的結構附加相同附圖標記,省略重複的說明。The following is a detailed description of the implementation mode with reference to the attached drawings. In addition, (the invention involved in the scope of the patent application is not limited to the following implementation mode). In the implementation mode, multiple features are recorded, but not all of these multiple features are necessary for the invention. In addition, multiple features can also be combined arbitrarily. Moreover, in the attached drawings, the same or similar structures are attached with the same figure mark, and repeated descriptions are omitted.
本發明涉及在基板上形成原版的圖案的光刻裝置。以下,說明將本發明應用於作為光刻裝置的一個例子的曝光裝置的例子。但是,光刻裝置不限於曝光裝置,也可以是其他光刻裝置。例如,光刻裝置也可以是利用帶電粒子束在基板(上的感光劑)上進行描繪的描繪裝置。或者,光刻裝置也可以是利用模對基板上的壓印材進行成型而在基板上形成圖案的壓印裝置。The present invention relates to a photolithography apparatus for forming a pattern of a master plate on a substrate. Hereinafter, an example in which the present invention is applied to an exposure apparatus as an example of a photolithography apparatus will be described. However, the lithography apparatus is not limited to the exposure apparatus and may be other lithography apparatuses. For example, the photolithography apparatus may be a drawing apparatus that draws on the substrate (photosensitive agent on the substrate) using a charged particle beam. Alternatively, the photolithography apparatus may be an imprint apparatus that molds an imprint material on a substrate using a mold to form a pattern on the substrate.
圖1是示出實施方式所涉及的曝光裝置的結構的圖。另外,圖2是示出由圖1的曝光裝置處理的基板W的佈局的圖。在圖2中,在基板W上形成有矩陣狀地排列的多個拍攝(shot)區域。在預定的1個拍攝區域中,形成有具有可登錄為基板W的位置測量用的標記的圖案的測量區域RA。另外,在預定的另外1個拍攝區域中,形成有具有可登錄為基板W的位置測量用的標記的圖案的測量區域RB。在基板W的外周部的一部分中,形成有在機械預對準中使用的槽口(notch)N。此外,也可以代替槽口N而形成定向平面(orientation flat)。FIG. 1 is a diagram showing the structure of an exposure device involved in an embodiment. In addition, FIG. 2 is a diagram showing the layout of a substrate W processed by the exposure device of FIG. 1 . In FIG. 2 , a plurality of shot areas arranged in a matrix are formed on the substrate W. In one predetermined shot area, a measurement area RA having a pattern of marks that can be registered for position measurement of the substrate W is formed. In addition, in another predetermined shot area, a measurement area RB having a pattern of marks that can be registered for position measurement of the substrate W is formed. In a portion of the outer periphery of the substrate W, a notch N used in mechanical pre-alignment is formed. In addition, an orientation flat may be formed instead of the notch N.
在圖1中,倍縮光罩載置台RS是保持作為原版(遮罩)的倍縮光罩R而移動的載置台。照明光學系統I對由倍縮光罩載置台RS保持的倍縮光罩R進行照明。在倍縮光罩R上,描繪有應轉印到基板W的圖案(例如電路圖案)。投影光學系統P將倍縮光罩R的圖案投影到基板W。In FIG. 1 , the reticle mounting base RS is a mounting base that moves while holding the reticle R serving as a master plate (mask). The illumination optical system I illuminates the reticle R held by the reticle mounting base RS. On the reduction mask R, a pattern (for example, a circuit pattern) to be transferred to the substrate W is drawn. The projection optical system P projects the pattern of the magnification mask R onto the substrate W.
基板搬送部WF針對裝置進行基板W的搬入及搬出。機械預對準單元MA進行檢測基板W的槽口N並調整基板W的位置及旋轉角中的至少一方的預對準。基板載置台STG是保持基板W而移動的保持部。在基板載置台STG上,設置有保持基板W的夾具CH。對準觀測器AS可以包括半反射鏡(half mirror)M和攝像部C。來自照明部LI的光被半反射鏡M反射而對基板W進行照明。被基板W反射的光經由半反射鏡M入射到攝像部C。攝像部C利用攝像元件捕捉入射的光來生成影像訊號。影像訊號被傳送給處理部IP。The substrate transfer unit WF carries the substrate W into and out of the device. The mechanical pre-alignment unit MA detects the notch N of the substrate W and performs pre-alignment to adjust at least one of the position and the rotation angle of the substrate W. The substrate mounting table STG is a holding portion that holds the substrate W and moves. A jig CH holding the substrate W is provided on the substrate mounting table STG. The alignment observer AS may include a half mirror M and an imaging section C. The light from the illumination unit LI is reflected by the half mirror M and illuminates the substrate W. The light reflected by the substrate W enters the imaging unit C via the half mirror M. The imaging unit C uses an imaging element to capture incident light to generate an image signal. The image signal is sent to the processing unit IP.
處理部IP根據由對準觀測器AS取得的影像,使用例如模版匹配(template matching)技術進行標記位置測量。處理部IP可以是包括未圖示的CPU以及記憶體MEM1的電腦裝置。控制部MC關於曝光處理總體地控制各部。例如,控制部MC根據來自處理部IP的位置測量資訊,驅動基板載置台STG,進行基板W的對位,執行將倍縮光罩R的圖案經由投影光學系統P對基板W進行曝光的曝光處理。控制部MC可以是包括未圖示的CPU以及記憶體MEM2的電腦裝置。此外,處理部IP和控制部MC也可以構成為獨立的裝置,處理部IP的功能和控制部MC的功能也可以由1個電腦裝置實現。The processing unit IP performs mark position measurement using, for example, template matching technology based on the image acquired by the alignment observer AS. The processing unit IP may be a computer device including a CPU (not shown) and a memory MEM1. The control unit MC controls the various units as a whole regarding the exposure process. For example, the control unit MC drives the substrate stage STG based on the position measurement information from the processing unit IP, performs positioning of the substrate W, and performs an exposure process of exposing the substrate W with the pattern of the magnification mask R through the projection optical system P. . The control unit MC may be a computer device including a CPU (not shown) and a memory MEM2. In addition, the processing unit IP and the control unit MC may be configured as independent devices, and the functions of the processing unit IP and the functions of the control unit MC may be realized by one computer device.
參照圖3~圖5的流程圖,說明實施方式中的標記登錄處理。在S31中,基板W被基板搬送部WF搬入到曝光裝置內,置於機械預對準單元MA上。機械預對準單元MA進行通過檢測基板W的槽口N來調整基板W的位置或者旋轉角的機械預對準。在S32中,由基板搬送部WF將基板W載置到基板載置台STG的夾具CH上。夾具CH例如通過真空吸引來保持所載置的基板W。The mark registration process in the embodiment will be described with reference to the flowcharts of FIGS. 3 to 5 . In S31, the substrate W is carried into the exposure apparatus by the substrate transport part WF, and is placed on the mechanical pre-alignment unit MA. The mechanical pre-alignment unit MA performs mechanical pre-alignment to adjust the position or rotation angle of the substrate W by detecting the notch N of the substrate W. In S32, the substrate W is placed on the chuck CH of the substrate mounting table STG by the substrate transport unit WF. The clamp CH holds the mounted substrate W by vacuum suction, for example.
在S33中,控制部MC控制基板載置台STG,將基板W的測量區域RA的中心座標送入到對準觀測器AS的視場中心。In S33, the control unit MC controls the substrate mounting table STG to send the center coordinates of the measurement area RA of the substrate W to the center of the field of view of the alignment observer AS.
在S34中,處理部IP執行標記登錄程序。圖4示出S34中的標記登錄程序的詳細流程圖。在S401中,控制部MC使照明部LI點亮而對基板W進行照明。由此,攝像部C能夠對基板的測量區域RA進行攝像來得到影像(圖案影像)。具體而言,被基板W反射的光入射到對準觀測器AS,經由半反射鏡M到達攝像部C。攝像部C利用攝像元件捕捉入射的光,生成圖案影像的影像訊號。影像訊號被傳送給處理部IP,例如被存儲到記憶體MEM1。In S34, the processing unit IP executes the mark registration program. FIG. 4 shows a detailed flowchart of the mark registration procedure in S34. In S401, the control unit MC lights the lighting unit LI to illuminate the substrate W. Thereby, the imaging unit C can image the measurement area RA of the substrate to obtain an image (pattern image). Specifically, the light reflected by the substrate W enters the alignment scope AS and reaches the imaging unit C via the half mirror M. The imaging unit C captures incident light using an imaging element and generates an image signal of a pattern image. The image signal is sent to the processing unit IP and stored in the memory MEM1, for example.
在S402中,處理部IP執行計算與得到的影像的熵有關的評價值的程序(計算程序)。在圖5中示出了S402中的計算程序的詳細流程圖。在S51中,處理部IP設定影像的區域分割。在此,如例如圖6所示,影像被分割成多個區域(例如4個區域)。但是,分割的區域的數量不限定於4個。In S402, the processing unit IP executes a program (calculation program) for calculating an evaluation value related to the entropy of the obtained image. A detailed flowchart of the calculation procedure in S402 is shown in FIG. 5 . In S51, the processing unit IP sets the area division of the image. Here, for example, as shown in FIG. 6 , the image is divided into a plurality of areas (for example, four areas). However, the number of divided areas is not limited to four.
在此,示出在以後的程序中使用的公式的集合。其中,將區域i中的熵設為E i,將區域內的亮度值k的發生機率設為P k。 Here, a set of formulas used in subsequent procedures is shown. Here, let the entropy in the region i be E i , and let the probability of occurrence of the brightness value k in the region be P k .
[數式1] [Formula 1]
在S52中,處理部IP使用以上所示的式(1)以及式(2),求出表示各區域的影像的熵的總和的整體熵E sum。在此,如圖6所示將影像分割為4個區域,所以i取1~4的值。另外,關於亮度值k,設想8位階調而取0~255的值,但k的範圍不限於此。整體熵E sum表示影像整體的資訊量,E sum越大表示整體的資訊量越多。 In S52, the processing unit IP uses the above-mentioned formula (1) and formula (2) to obtain the overall entropy E sum representing the sum of the entropies of the image in each region. Here, the image is divided into four regions as shown in FIG6, so i takes a value of 1 to 4. In addition, regarding the brightness value k, an 8-bit gradation is assumed and a value of 0 to 255 is taken, but the range of k is not limited to this. The overall entropy E sum represents the information content of the entire image, and the larger the E sum , the more overall information content.
在S53中,處理部IP使用式(1)求出每個區域的影像熵E i。在S54中,處理部IP使用式(3)、式(4)求出表示各區域的影像的熵的方差的熵變異數E var。熵變異數E var表示在影像中示出的圖案的分佈的偏差,熵變異數E var越小表示圖案的分佈越均等(無偏差)。 In S53, the processing unit IP uses formula (1) to calculate the image entropy E i of each region. In S54, the processing unit IP uses formula (3) and formula (4) to calculate the entropy variation E var representing the variance of the entropy of the image of each region. The entropy variation E var represents the deviation of the distribution of the pattern shown in the image. The smaller the entropy variation E var is, the more uniform the distribution of the pattern is (no deviation).
在S55及S56中,處理部IP求出多個區域中的相對於影像的中心處於對稱的位置的區域的影像的熵的差分。例如,在S55中,處理部IP使用式(5)、式(6)、式(9)求出上側區域(圖6的區域1、2)和下側區域(圖6的區域3、4)的熵差分值E
diff1。熵差分值E
diff1越小,上側區域和下側區域的圖案的對稱性越高。在S56中,處理部IP使用式(7)、式(8)、式(10)求出左側區域(圖6的區域1、3)和右側區域(圖6的區域2、4)的熵差分值E
diff2。熵差分值E
diff2越小,左側區域和右側區域的圖案的對稱性越高。
In S55 and S56, the processing unit IP obtains the difference in entropy of the image in a region that is symmetrical with respect to the center of the image among the plurality of regions. For example, in S55, the processing unit IP obtains the upper area (
在S57中,處理部IP通過將在S52~S56中計算出的整體熵E sum、熵變異數E var、熵差分值E diff1及E diff2應用於式(11),求出熵評價值E total。作為評價式的式(11)的右邊第1項表示整體熵E sum越高則評價值越提高。如上所述,整體熵E sum表示圖案影像整體的資訊量。資訊量越多則測量準確度越提高(等價於標記的個數越多),所以整體熵E sum越高則評價值越提高。式(11)的右邊第2項表示熵變異數E var越小則評價值越提高。熵變異數E var越小,圖案的分佈越均等(無偏差),測量系統的像差的影響越小。式(11)的右邊第3項及第4項分別表示熵差分值E diff1及E diff2越小則圖案的對稱性越高,評價值提高。 In S57, the processing unit IP obtains the entropy evaluation value E total by applying the overall entropy E sum , the entropy variation number E var , and the entropy difference values E diff1 and E diff2 calculated in S52 to S56 to the equation (11). . The first term on the right side of equation (11), which is an evaluation expression, indicates that the higher the overall entropy E sum is , the higher the evaluation value is. As mentioned above, the overall entropy E sum represents the amount of information of the entire pattern image. The greater the amount of information, the higher the measurement accuracy (equivalent to the greater the number of markers), so the higher the overall entropy Esum , the higher the evaluation value. The second term on the right side of equation (11) indicates that the smaller the entropy variation E var is , the higher the evaluation value is. The smaller the entropy variation coefficient E var , the more equal (unbiased) the distribution of the pattern, and the smaller the influence of the aberration of the measurement system. The third and fourth terms on the right side of equation (11) respectively represent that the smaller the entropy difference values E diff1 and E diff2 are, the higher the symmetry of the pattern will be, and the evaluation value will be improved.
根據以上,S402中的子程序完成。Based on the above, the subroutine in S402 is completed.
返回到圖4,在S403中,處理部IP判定在S402中計算出的熵評價值E total是否滿足預定的基準。例如,處理部IP判定在S402中計算出的熵評價值E total是否為預定的閾值以上。在熵評價值E total為閾值以上的情況下,處理部IP進入到S404,將在S401中得到的影像的資訊登錄為用於基板的位置測量的資訊。「影像的資訊」既可以是影像本身,也可以是影像的特徵量。另外,在影像的資訊中也可以包括基板中的該影像的位置的資訊。在此,處理部IP將在S401中得到的影像登錄為基板上的測量區域RA的標記影像。登錄的影像例如被存儲到控制部MC的記憶體MEM2。 Returning to FIG. 4 , in S403 , the processing unit IP determines whether the entropy evaluation value E total calculated in S402 satisfies a predetermined criterion. For example, the processing unit IP determines whether the entropy evaluation value E total calculated in S402 is equal to or greater than a predetermined threshold. When the entropy evaluation value E total is equal to or greater than the threshold value, the processing unit IP proceeds to S404 and registers the image information obtained in S401 as information used for position measurement of the substrate. "Image information" can be either the image itself or the feature quantity of the image. In addition, the image information may also include information on the position of the image on the substrate. Here, the processing unit IP registers the image obtained in S401 as the mark image of the measurement area RA on the substrate. The registered image is stored in the memory MEM2 of the control unit MC, for example.
返回到圖3,在S35中,控制部MC控制基板載置台STG,將基板W的測量區域RB的中心座標送入到對準觀測器AS的視場中心。之後,在S36中,執行針對測量區域RB的標記登錄程序。該標記登錄程序是與上述S34的標記登錄程序同樣的處理,所以省略說明。Returning to FIG. 3 , in S35, the control unit MC controls the substrate stage STG to send the center coordinates of the measurement area RB of the substrate W to the center of the field of view of the alignment observer AS. Thereafter, in S36, a mark registration procedure for the measurement area RB is executed. This mark registration procedure is the same as the mark registration procedure of S34 above, so the description thereof is omitted.
接下來,說明在圖4的S403中判定熵評價值E
total並非閾值以上(即,不滿足預定的基準)的情況。在該情況下,處理進入到S405。在S405中,處理部IP將圖6的區域1如圖7所示進一步分割為4個子區域1-1、1-2、1-3、1-4,依照圖5的流程圖計算各子區域的影像的熵,求出區域1的熵評價值。此外,在圖7的例子中將各區域進一步分割為4個子區域,但分割數不限於此。之後,在S406、S407、S408中,處理部IP針對區域2、3、4也同樣地求出熵評價值。
Next, the case where it is determined in S403 of FIG. 4 that the entropy evaluation value E total is not above the threshold (i.e., does not meet the predetermined standard) is explained. In this case, the processing enters S405. In S405, the processing unit IP further divides the
在S409中,控制部MC根據在S405~S408中求出的熵評價值,決定基板載置台STG的驅動量。例如,控制部MC選擇在S405~S408中求出的熵評價值最大的區域。在圖8中示出了與圖7對應的影像的分割佈局。在圖8中,將影像的橫向的像素數設為XPIX,將縱向的像素數設為YPIX。在此,作為一個例子,設想圖6的區域4的熵評價值最大的情況。在該情況下,在圖8中,用於將區域4的中心OFS送入到影像中心ORG(對準觀測器AS(攝像部C)的視場中心)的驅動量能夠設為Δ(1/4)XPIX、Δ(1/4)YPIX。In S409, the control unit MC determines the driving amount of the substrate mounting table STG based on the entropy evaluation value obtained in S405 to S408. For example, the control unit MC selects the area in which the entropy evaluation value obtained in S405 to S408 is the largest. FIG. 8 shows the segmentation layout of the image corresponding to FIG. 7 . In FIG. 8 , let the number of pixels in the horizontal direction of the image be XPIX, and let the number of pixels in the vertical direction be YPIX. Here, as an example, assume a case where the entropy evaluation value of
在S410中,控制部MC以在S409中決定的驅動量驅動基板載置台STG。這樣,以使熵評價值最大的區域的中心位於攝像部C的視場中心的方式調整基板載置台STG的位置。In S410, the control unit MC drives the substrate mounting table STG with the driving amount determined in S409. In this way, the position of the substrate mounting table STG is adjusted so that the center of the area with the largest entropy evaluation value is located at the center of the field of view of the imaging unit C.
之後,處理返回到S401,再次以同樣的程序進行標記影像登錄。由此,能夠決定使熵評價值最大化的影像的區域。After that, the process returns to S401, and the same procedure is used to register the marked image again. This makes it possible to determine the area of the image that maximizes the entropy evaluation value.
<第2實施方式> 在上述第1實施方式中,在圖4中示出了圖3的標記登錄程序(S34、S36)的詳細流程,在圖10中示出圖4的代替例。 <Second embodiment> In the above-mentioned first embodiment, the detailed flow of the tag registration procedure (S34, S36) of FIG. 3 is shown in FIG. 4, and an alternative example of FIG. 4 is shown in FIG. 10.
圖10的S1001、S1002、S1003、S1004分別與圖4的S401、S402、S403、S404相同。在圖10中,在S1003中判定熵評價值E
total並非閾值以上的情況下,處理進入到S1005。在S1005中,處理部IP將求出熵評價值E
total的對象區域如圖9所示變更為原始的影像的區域OAR的部分區域MAR。之後,處理返回到S1002。在S1002中,處理部IP依照圖5的流程,針對部分區域MAR中的區域1~4求出熵評價值。之後,在S403中,如果該熵評價值成為閾值以上,則在S404中將部分區域MAR的影像登錄為標記影像。登錄的影像例如被存儲到控制部MC的記憶體MEM2。
S1001, S1002, S1003, and S1004 in Fig. 10 are respectively the same as S401, S402, S403, and S404 in Fig. 4. In FIG. 10 , when it is determined in S1003 that the entropy evaluation value E total is not equal to or greater than the threshold value, the process proceeds to S1005 . In S1005, the processing unit IP changes the target area for calculating the entropy evaluation value E total to a partial area MAR of the original image area OAR as shown in FIG. 9 . After that, the process returns to S1002. In S1002, the processing unit IP obtains the entropy evaluation value for
<第3實施方式> 在圖11中,示出倍縮光罩R內的形成有應被曝光到基板的電路圖案等圖案的設計區域。在此,將倍縮光罩R的設計區域的X方向的尺寸設為RXNM,將Y方向的尺寸設為RYNM,將由攝像部C攝像的影像的X方向的尺寸設為XNM、YNM。處理部IP將倍縮光罩R的設計區域分割為各自與影像的尺寸XNM、YNM相同或者比其小的多個區域,在各個分割區域中計算熵評價值。之後,處理部IP根據計算出的各區域的熵評價值,求出設計區域中的要形成可登錄為標記的圖案的位置。例如,處理部IP針對各分割區域判定熵評價值是否為閾值以上。在熵評價值為閾值以上的情況下,該分割區域是倍縮光罩R的設計區域中的適合於測量的區域,判斷為是適合於可登錄為標記的圖案的形成的區域。 <3rd Embodiment> FIG. 11 shows a design area in the reduction mask R where a pattern such as a circuit pattern to be exposed to the substrate is formed. Here, let the X-direction size of the design area of the zoom mask R be RXNM, let the Y-direction size be RYNM, and let the X-direction sizes of the image captured by the imaging unit C be XNM and YNM. The processing unit IP divides the design area of the magnification mask R into a plurality of areas, each of which is the same as or smaller than the image sizes XNM and YNM, and calculates an entropy evaluation value in each divided area. Thereafter, the processing unit IP determines the position in the design area where a pattern that can be registered as a mark is to be formed based on the calculated entropy evaluation value of each area. For example, the processing unit IP determines whether the entropy evaluation value is equal to or higher than a threshold value for each divided region. When the entropy evaluation value is equal to or higher than the threshold value, the divided area is a suitable area for measurement in the design area of the reduction mask R, and is determined to be a suitable area for forming a pattern that can be registered as a mark.
由此,能夠預先求出倍縮光罩R的設計區域上的適合於測量的位置(適合於形成可登錄為標記的圖案的位置)。Thus, a position suitable for measurement (a position suitable for forming a pattern that can be registered as a mark) on the design area of the reduction mask R can be found in advance.
<物品製造方法的實施方式> 本發明的實施方式中的物品製造方法例如適合於製造半導體裝置等微型裝置、具有微細構造的元件等物品。本實施方式的物品製造方法包括使用上述光刻裝置(曝光裝置、壓印裝置、描繪裝置等)將原版的圖案轉印到基板的程序以及加工在上述程序中轉印有圖案的基板的程序。而且,上述製造方法包括其他公知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、黏合、封裝等)。本實施方式的物品製造方法相比於以往的方法,在物品的性能、質量、生產率、生產成本中的至少1個方面更有利。 發明不限制於上述實施方式,能夠不脫離發明的精神以及範圍而進行各種變更以及變形。因此,為了公開發明的範圍而提供申請專利範圍。 <Implementation of the method for manufacturing an article> The method for manufacturing an article in the implementation of the present invention is suitable for manufacturing articles such as micro devices such as semiconductor devices, components with micro structures, etc. The method for manufacturing an article in the present embodiment includes a procedure for transferring the pattern of the original plate to a substrate using the above-mentioned photolithography device (exposure device, imprinting device, drawing device, etc.) and a procedure for processing the substrate to which the pattern is transferred in the above-mentioned procedure. In addition, the above-mentioned manufacturing method includes other well-known procedures (oxidation, film formation, evaporation, doping, planarization, etching, anti-etching agent stripping, cutting, bonding, packaging, etc.). The method for manufacturing an article in the present embodiment is more advantageous than the previous method in at least one of the performance, quality, productivity, and production cost of the article. The invention is not limited to the above-mentioned implementation, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, a patent application is provided in order to disclose the scope of the invention.
W:基板 R:倍縮光罩 MA:機械預對準單元 STG:基板載置台 CH:夾具(chuck) AS:對準觀測器(alignment scope) IP:處理部 MC:控制部 W: substrate R: zoom mask MA: mechanical pre-alignment unit STG: substrate stage CH: chuck AS: alignment scope IP: processing unit MC: control unit
[圖1]是示出曝光裝置的結構的圖。 [圖2]是示出基板的佈局的圖。 [圖3]是標記登錄處理的流程圖。 [圖4]是標記登錄程序的流程圖。 [圖5]是熵評價值計算程序的流程圖。 [圖6]是示出影像的區域分割的例子的圖。 [圖7]是示出區域的向子區域的分割的例子的圖。 [圖8]是說明基板載置台的驅動量的決定程序的圖。 [圖9]是在本實施方式中使用的區域縮小佈局圖。 [圖10]是標記登錄程序的流程圖。 [圖11]是說明基於倍縮光罩(reticle)的設計區域的區域分割的例子的圖。 [FIG. 1] is a diagram showing the structure of an exposure device. [FIG. 2] is a diagram showing the layout of a substrate. [FIG. 3] is a flowchart of a mark registration process. [FIG. 4] is a flowchart of a mark registration program. [FIG. 5] is a flowchart of an entropy evaluation value calculation program. [FIG. 6] is a diagram showing an example of region division of an image. [FIG. 7] is a diagram showing an example of division of a region into sub-regions. [FIG. 8] is a diagram illustrating a procedure for determining the drive amount of a substrate stage. [FIG. 9] is a diagram of a region reduction layout used in the present embodiment. [FIG. 10] is a flowchart of a mark registration program. [FIG. 11] is a diagram illustrating an example of region division of a design region based on a reticle.
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