TWI836216B - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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TWI836216B
TWI836216B TW110116667A TW110116667A TWI836216B TW I836216 B TWI836216 B TW I836216B TW 110116667 A TW110116667 A TW 110116667A TW 110116667 A TW110116667 A TW 110116667A TW I836216 B TWI836216 B TW I836216B
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nozzle
liquid
substrate
chemical
suction
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TW110116667A
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TW202201515A (en
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岩尾通矩
安田周一
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日商斯庫林集團股份有限公司
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Abstract

本案說明書中所揭示的技術為用以在使用複數個藥液之基板處理中抑制藥液間的混合之技術。本案說明書中所揭示的技術的基板處理方法係具備下述步驟：從第一噴嘴對基板噴出第一藥液；在噴出第一藥液後，吸引第一噴嘴內的液體；以及在停止吸引第一噴嘴內的液體後，從第二噴嘴對基板噴出與第一藥液不同的第二藥液。The technology disclosed in the specification of this case is a technology for suppressing mixing of chemical liquids during substrate processing using a plurality of chemical liquids. The substrate processing method of the technology disclosed in the specification of this case has the following steps: spraying the first chemical liquid from the first nozzle to the substrate; after spraying the first chemical liquid, sucking the liquid in the first nozzle; and stopping sucking the second chemical liquid. After the liquid in one nozzle is discharged, a second chemical liquid different from the first chemical liquid is sprayed from the second nozzle to the substrate.

Description

基板處理方法以及基板處理裝置Substrate processing method and substrate processing device

本案說明書中所揭示的技術係有關於一種基板處理方法以及基板處理裝置。成為處理對象之基板係例如包括半導體晶圓、液晶顯示裝置用玻璃基板、有機EL(electroluminescence；電致發光)顯示裝置等平面顯示器(FPD；flat panel display)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用玻璃基板、陶瓷基板、場發射顯示器(FED；field emission display)用基板或者太陽電池用基板等。 The technology disclosed in the description of this case relates to a substrate processing method and a substrate processing device. Substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPD; flat panel displays) such as organic EL (electroluminescence) display devices, substrates for optical disks, and magnetic disks. Substrates, optical disk substrates, photomask glass substrates, ceramic substrates, field emission display (FED; field emission display) substrates, solar cell substrates, etc.

以往，在半導體基板(以下簡稱為「基板」)的製造步驟中，使用基板處理裝置對基板進行各種處理。 In the past, in the manufacturing process of semiconductor substrates (hereinafter referred to as "substrates"), substrate processing equipment was used to perform various processes on the substrates.

在基板處理中會有下述情形：雖然經由噴嘴對基板噴出一種或者複數種藥液，然而為了控制來自噴嘴的垂液等，進行用以吸引噴嘴內的藥液之吸引動作(參照例如專利文獻1)。 In substrate processing, there may be a case where one or a plurality of chemical liquids are sprayed onto the substrate via a nozzle, but in order to control the drop of liquid from the nozzle, etc., a suction operation is performed to suck the chemical liquid in the nozzle (see, for example, patent documents 1).

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2018-56550號公報。 [Patent Document 1] Japanese Patent Publication No. 2018-56550.

在以時間順序依序噴出複數種藥液之情形中，會有在用以吸引先前的藥液之吸引動作中吸引到後面的藥液(或者藥液的氛圍(atmosphere))之情形。在此種情形中，會有因為藥液間的混合(混合接觸)而產生微粒(particle)之情形，最終會有導致製品不良之問題。 When a plurality of medical solutions are ejected in chronological order, the subsequent medical solution (or the atmosphere of the medical solution) may be attracted during the suction action for attracting the previous medical solution. In this case, particles may be generated due to mixing (mixing contact) between chemical liquids, which may ultimately lead to product defects.

本案說明書中所揭示的技術係有鑑於以上所說明的問題而研創，且為下述技術：用以在使用複數種藥液之基板處理中抑制藥液間的混合。 The technology disclosed in the specification of this case was developed in view of the problems described above, and is a technology for suppressing mixing of chemical liquids in substrate processing using a plurality of chemical liquids.

本案說明書中所揭示的技術的第一態樣為一種基板處理方法，係具備下述步驟：從第一噴嘴對基板噴出第一藥液；在噴出前述第一藥液後，吸引前述第一噴嘴內的液體；以及在停止吸引前述第一噴嘴內的前述液體後，從第二噴嘴對前述基板噴出與前述第一藥液不同的第二藥液。 The first aspect of the technology disclosed in the specification of this case is a substrate processing method, which has the following steps: spraying a first chemical liquid from a first nozzle to the substrate; after spraying the first chemical liquid, sucking the first nozzle and after stopping suctioning the liquid in the first nozzle, spraying a second chemical solution different from the first chemical solution from the second nozzle to the substrate.

本案說明書中所揭示的技術的第二態樣係與第一態樣關連，其中進一步具備下述步驟：在噴出前述第一藥液後且在噴出前述第二藥液前，對前述基板噴出清洗(rinse)液。 The second aspect of the technology disclosed in the specification of this case is related to the first aspect, and further includes the following steps: after spraying the first chemical liquid and before spraying the second chemical liquid, spraying and cleaning the aforementioned substrate (rinse) liquid.

本案說明書中所揭示的技術的第三態樣係與第二態樣關連，其中用以吸引前述第一噴嘴內的前述液體之步驟係比用以噴出前述清洗液之步驟還先結束。 The third aspect of the technology disclosed in the specification of this case is related to the second aspect, in which the step of sucking the liquid in the first nozzle is completed before the step of spraying the cleaning liquid.

本案說明書中所揭示的技術的第四態樣係與第二態樣或者第三態樣關連，其中前述清洗液係在用以吸引前述第一噴嘴內的前述液體之步驟之前從前述第一噴嘴噴出。 The fourth aspect of the technology disclosed in the specification of this case is related to the second aspect or the third aspect, wherein the cleaning liquid is ejected from the first nozzle before the step of sucking the liquid in the first nozzle.

本案說明書中所揭示的技術的第五態樣係與第二態樣至第四態樣中任一態樣關連，其中前述清洗液係在用以吸引前述第一噴嘴內的前述液體之步驟的期間從前述第二噴嘴噴出。 The fifth aspect of the technology disclosed in the specification of this case is related to any one of the second to fourth aspects, wherein the aforementioned cleaning liquid is used in the step of sucking the aforementioned liquid in the aforementioned first nozzle. During this period, it is sprayed from the second nozzle.

本案說明書中所揭示的技術的第六態樣係與第二態樣至第五態樣中任一態樣關連，其中用以噴出前述清洗液之步驟係在前述第一噴嘴以及前述第二噴嘴雙方以時間順序依序進行。 The sixth aspect of the technology disclosed in the specification of this case is related to any aspect from the second aspect to the fifth aspect, wherein the step of spraying the aforementioned cleaning liquid is performed sequentially in time sequence at both the aforementioned first nozzle and the aforementioned second nozzle.

本案說明書中所揭示的技術的第七態樣係與第一態樣至第六態樣中任一態樣關連，其中前述第一藥液以及前述第二藥液的一方為酸性的液體且另一方為鹼性的液體。 The seventh aspect of the technology disclosed in the specification of this case is related to any one of the first to sixth aspects, wherein one of the first liquid and the second liquid is an acidic liquid and the other is an alkaline liquid.

本案說明書中所揭示的技術的第八態樣係與第二態樣至第六態樣中任一態樣關連，其中前述清洗液為水。 The eighth aspect of the technology disclosed in the specification of this case is related to any one of the second to sixth aspects, in which the aforementioned cleaning liquid is water.

本案說明書中所揭示的技術的第九態樣係與第一態樣至第八態樣中任一態樣關連，其中前述第一噴嘴以及前述第二噴嘴係共通地設置於與前述基板對向地配置之阻隔板的中央部。 The ninth aspect of the technology disclosed in the specification of this case is related to any one of the first to eighth aspects, wherein the aforementioned first nozzle and the aforementioned second nozzle are commonly disposed opposite to the aforementioned substrate. The central part of the ground-disposed baffle plate.

本案說明書中所揭示的技術的第十態樣係與第一態樣至第九態樣中任一態樣關連，其中前述第一噴嘴與前述第二噴嘴係彼此配置於附近。 The tenth aspect of the technology disclosed in the specification of this case is related to any one of the first to ninth aspects, in which the aforementioned first nozzle and the aforementioned second nozzle are arranged near each other.

本案說明書中所揭示的技術的第十一態樣係與第一態樣至第十態樣中任一態樣關連，其中用以吸引前述第一噴嘴內的液體之步驟係在前述基板的上方進行。 The eleventh aspect of the technology disclosed in the specification of this case is related to any one of the first to tenth aspects, wherein the step of sucking the liquid in the first nozzle is performed above the substrate.

本案說明書中所揭示的技術的第十二態樣為一種基板處理裝置，係具備：第一噴嘴，係對基板噴出第一藥液；吸引機構，係在噴出前述第一藥液後，吸引前述第一噴嘴內的液體；以及第二噴嘴，係在停止吸引前述第一噴嘴內的前述液體後，對前述基板噴出與前述第一藥液不同的第二藥液。 A twelfth aspect of the technology disclosed in the specification of this case is a substrate processing device, which is provided with: a first nozzle that sprays a first chemical liquid to the substrate; and a suction mechanism that attracts the aforementioned first chemical liquid after spraying it. The liquid in the first nozzle; and the second nozzle sprays a second chemical liquid different from the first chemical liquid to the substrate after stopping suction of the liquid in the first nozzle.

依據本案說明書中所揭示的技術的第一態樣至第十二態樣，在停止經由第一噴嘴的第一藥液的吸引動作後，開始從第二噴嘴供給第二藥液。因此，在第一噴嘴內吸引第二藥液的氛圍之情形被抑制。因此，在第一噴嘴內第一藥液與第二藥液混合之情形被充分地抑制。 According to the first to twelfth aspects of the technology disclosed in the specification of this case, after stopping the suction action of the first liquid medicine through the first nozzle, the second liquid medicine is supplied from the second nozzle. Therefore, the situation of sucking the atmosphere of the second liquid medicine in the first nozzle is suppressed. Therefore, the situation of mixing the first liquid medicine with the second liquid medicine in the first nozzle is fully suppressed.

此外，藉由以下所示的詳細的說明以及隨附圖式可更明瞭與本案說明書所揭示的技術關連之目的、特徵、態樣以及優點。 In addition, the purpose, features, aspects and advantages related to the technology disclosed in the specification can be more clearly understood through the detailed description and accompanying drawings shown below.

1:基板處理裝置 1: Substrate processing equipment

5:自轉夾具 5: Self-rotating clamp

8,10,12,13,21,310,312,314,316,400,402:噴嘴 8,10,12,13,21,310,312,314,316,400,402: Nozzle

14,15,16,30,38,39,330,332,334,336:供給及吸引機構 14,15,16,30,38,39,330,332,334,336: supply and attraction agencies

17:罩 17:hood

17a:上端部 17a: Upper end

18:隔壁 18: Next door

19:風扇過濾器單元 19:Fan filter unit

20:排氣導管 20:Exhaust duct

22:自轉馬達 22: Rotating motor

23:自轉軸 23:Rotation axis

24:自轉基座 24: Rotating base

25:夾持構件 25: Clamping member

26,26A:對向構件 26,26A: Opposite components

27,27A:阻隔板 27,27A:Baffle plate

28:旋轉軸 28: Rotation axis

29:基板對向面 29:Substrate opposite surface

31:支撐臂 31:Support arm

32:軸噴嘴 32: Axis nozzle

33:罩殼 33: cover

34:旋轉機構 34: Rotating mechanism

35:升降機構 35:Lifting mechanism

36:惰性氣體供給源 36: Inert gas supply source

44:連接配管 44: Connecting pipes

45:排液配管 45:Drainage piping

46:藥液配管 46: Liquid medicine piping

47:清洗液配管 47: Cleaning fluid piping

48,49:吸引配管 48,49: Suction piping

50,51,52,53,56:閥 50,51,52,53,56: valve

54:調整閥 54:Adjusting valve

55,57:吸引裝置 55,57: Suction device

80:腔室 80: Chamber

90:控制部 90:Control Department

91:CPU 91:CPU

92:ROM 92:ROM

93:RAM 93:RAM

94:記憶裝置 94: Memory device

94P:處理程式 94P: Processing program

95:匯流排線 95: Bus cable

96:輸入部 96:Input part

97:顯示部 97: Display unit

98:通訊部 98: Ministry of Communications

108,110,112,113,121,320,322,324,326,401,403:配管 108,110,112,113,121,320,322,324,326,401,403: Piping

127:爪部 127: Claws

132:貫通孔 132:Through hole

200,203:藥液 200,203:Medicine liquid

201,202:清洗液 201,202:Cleaning fluid

300:噴嘴臂 300:Nozzle arm

300A:臂部 300A:Arm

300B:軸部 300B: Shaft

300C:致動器 300C: Actuator

302:支撐部 302: Support part

A1,A2:旋轉軸線 A1, A2: axis of rotation

C:承載器 C:Carrier

CR:中心機器人 CR: Center Robot

IR:索引機器人 IR: Index Robot

LP:裝載埠 LP: Loading port

PS:基板載置部 PS: Substrate mounting section

UT,UTa,UTb,UTc:處理單元 UT, UTa, UTb, UTc: processing unit

W:基板 W: substrate

[圖1]係概略性地顯示實施形態的基板處理裝置的構成的例子之俯視圖。 [Figure 1] is a top view schematically showing an example of the structure of a substrate processing device in an implementation form.

[圖2]係概念性地顯示圖1的例子所示的控制部的構成的例子之圖。 [Fig. 2] A diagram conceptually showing an example of the configuration of the control unit shown in the example of Fig. 1. [Fig.

[圖3]係示意性地顯示實施形態的處理單元的構成的例子之圖。 [Fig. 3] Fig. 3 is a diagram schematically showing an example of the structure of a processing unit according to the embodiment.

[圖4]係示意性地顯示對向構件的構成的例子之剖視圖。 [Fig. 4] is a cross-sectional view schematically showing an example of the structure of the facing member.

[圖5]係顯示對向構件的例子之仰視圖。 [Figure 5] is a bottom view showing an example of opposing components.

[圖6]係示意性地顯示圖3以及圖4的例子所示的供給及吸引機構的構成的例子之圖。 [Fig. 6] A diagram schematically showing an example of the structure of the supply and suction mechanism shown in the example of Figs. 3 and 4. [Fig.

[圖7]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Figure 7] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[圖8]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Figure 8] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[圖9]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Figure 9] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[圖10]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Figure 10] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[圖11]係示意性地顯示實施形態的處理單元的構成的例子之圖。 [Figure 11] is a diagram schematically showing an example of the configuration of a processing unit in an implementation form.

[圖12]係示意性地顯示對向構件的構成的例子之剖視圖。 [Fig. 12] Fig. 12 is a cross-sectional view schematically showing an example of the structure of the facing member.

[圖13]係顯示對向構件的例子之仰視圖。 [Figure 13] is a bottom view showing an example of opposing components.

[圖14]係示意性地顯示實施形態的處理單元的構成的例子之圖。 [Figure 14] is a diagram schematically showing an example of the configuration of a processing unit in an implementation form.

[圖15]係示意性地顯示圖14的例子所示的供給及吸引機構的構成的例子之圖。 [Fig. 15] A diagram schematically showing an example of the structure of the supply and suction mechanism shown in the example of Fig. 14. [Fig.

[圖16]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Figure 16] is a schematic diagram used to explain the operation of the substrate processing device, especially the operation of the supply and suction mechanism.

[圖17]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Fig. 17] is a schematic diagram for explaining the operation of the substrate processing apparatus, especially the operation of the supply and suction mechanism.

[圖18]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Fig. 18] is a schematic diagram for explaining the operation of the substrate processing apparatus, especially the operation of the supply and suction mechanism.

[圖19]係用以說明基板處理裝置的動作中之尤其是供給及吸引機構的動作之示意圖。 [Fig. 19] is a schematic diagram for explaining the operation of the substrate processing apparatus, especially the operation of the supply and suction mechanism.

[圖20]係示意性地顯示實施形態的處理單元的構成的例子之圖。 [Fig. 20] Fig. 20 is a diagram schematically showing an example of the structure of a processing unit according to the embodiment.

[圖21]係示意性地顯示圖20的例子所示的供給及吸引機構的構成的例子之圖。 [Fig. 21] A diagram schematically showing an example of the structure of the supply and suction mechanism shown in the example of Fig. 20. [Fig.

[圖22]係用以說明基板處理裝置的動作中之尤其是從噴嘴供給處理液的動作之示意圖。 22 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

[圖23]係用以說明基板處理裝置的動作中之尤其是從噴嘴供給處理液的動作之示意圖。 [Figure 23] is a schematic diagram for explaining the operation of the substrate processing device, especially the operation of supplying the processing liquid from the nozzle.

[圖24]係用以說明基板處理裝置的動作中之尤其是從噴嘴供給處理液的動作之示意圖。 [Figure 24] is a schematic diagram for explaining the operation of the substrate processing device, especially the operation of supplying the processing liquid from the nozzle.

[圖25]係用以說明基板處理裝置的動作中之尤其是從噴嘴供給處理液的動作之示意圖。 25 is a schematic diagram for explaining the operation of the substrate processing apparatus, particularly the operation of supplying the processing liquid from the nozzle.

以下參照隨附的圖式說明實施形態。雖然在以下的實施形態中為了說明技術亦顯示了詳細的特徵等，然而這些詳細的特徵等僅為例示，這些詳細的特徵等並非全部皆是為了能夠實現實施形態所必須的特徵。 The following describes the implementation with reference to the attached drawings. Although detailed features are shown in the following implementation for the purpose of illustrating the technology, these detailed features are only for illustration and not all of them are necessary features for realizing the implementation.

此外，圖式為概略性地顯示之圖，為了方便說明，在圖式中適當地將構成省略或者將構成簡化。此外，於不同的圖式分別顯示的構成等之大小以及位置的相互關係並未正確地記載，會適當地變更。此外，為了容易理解實施形態的內容，亦會有在非為剖視圖之俯視圖等圖式中附上陰影線之情形。 In addition, the drawings are schematically shown, and for convenience of explanation, the structures are appropriately omitted or simplified in the drawings. In addition, the relationship between the size and position of the components shown in different drawings is not accurately described and will be changed appropriately. In addition, in order to make it easier to understand the contents of the embodiments, hatching may be added to drawings such as plan views that are not cross-sectional views.

此外，在以下所示的說明中，於同樣的構成要素附上相同的元件符號來圖示，且這些構成要素的名稱以及功能皆視為相同。因此，會有為了避免重複而省略這些構成要素的詳細說明之情形。 In addition, in the following description, the same components are illustrated with the same component symbols, and the names and functions of these components are considered to be the same. Therefore, in order to avoid duplication, the detailed description of these components may be omitted.

此外，在以下所記載的說明中，在記載成「具備」、「包含」或者「具有」某個構成要素等之情形中，只要未特別說明則此種記載並非是將其他的構成要素的存在予以排除之排他式的表現。 In addition, in the following descriptions, when a certain constituent element is described as "equipped with", "including", or "having", such description does not exclude the existence of other constituent elements unless otherwise specified.

此外，在以下所記載的說明中，即使在使用了「第一」或者「第二」等排序數字之情形中，這些用語亦為為了容易理解實施形態的內容而適宜使用的用語，而非是限定於這些排序數字所產生的順序等。 In addition, in the description described below, even when ranking numbers such as "first" or "second" are used, these terms are appropriate terms to be used in order to easily understand the contents of the embodiments, and are not Limited to the order in which these sorted numbers are generated, etc.

此外，在以下所記載的說明中，即使在使用了表示「上」、「下」、「左」、「右」、「側」、「底」、「表」或者「背」等特定的位置或者方向之用語的情形中，這些用語亦為為了容易理解實施形態的內容而適宜使用的用語，而與實際實施時的位置或者方向無關。 In addition, in the following description, even when terms indicating specific positions or directions such as "upper", "lower", "left", "right", "side", "bottom", "front", or "back" are used, these terms are used appropriately to facilitate understanding of the content of the implementation form and have nothing to do with the position or direction in actual implementation.

此外，在以下所記載的說明中，在記載成「…的上表面」或者「…的下表面」等之情形中，除了成為對象之構成要素的上表面本體或者下表面本體之外，亦包含了於成為對象之構成要素的上表面或者下表面形成有其他的構成要素之狀態。亦即，例如在記載成「設置於甲的上表面之乙」之情形中，亦不會妨礙於甲與乙之間夾著其他的構成要素的「丙」。 In addition, in the following description, when it is written as "the upper surface of..." or "the lower surface of...", in addition to the upper surface body or lower surface body of the constituent element being the object, it also includes the state where other constituent elements are formed on the upper surface or lower surface of the constituent element being the object. That is, for example, when it is written as "B disposed on the upper surface of A", it does not interfere with "C" which is another constituent element sandwiched between A and B.

[第一實施形態] [First Embodiment]

以下，說明本實施形態的基板處理方法以及基板處理裝置。 Hereinafter, the substrate processing method and substrate processing apparatus of this embodiment will be described.

[針對基板處理裝置的構成] [Regarding the structure of the substrate processing device]

圖1係概略性地顯示實施形態的基板處理裝置1的構成的例子之俯視圖。基板處理裝置1係具備裝載埠(load port)LP、索引機器人(indexer robot)IR、中心機器人(center robot)CR、控制部90以及至少一個處理單元UTa(在圖1中為四個處理單元UTa)。 FIG. 1 is a plan view schematically showing an example of the structure of the substrate processing apparatus 1 according to the embodiment. The substrate processing apparatus 1 includes a load port LP, an indexer robot IR, a center robot CR, a control unit 90 and at least one processing unit UTa (four processing units UTa in FIG. 1 ).

各個處理單元UTa係用以處理基板W(晶圓)。處理單元UTa為葉片式的裝置，能使用於基板處理。 Each processing unit UTa is used to process a substrate W (wafer). The processing unit UTa is a blade-type device that can be used for substrate processing.

此外，處理單元UTa係能具有腔室(chamber)80。在此情形中，藉由控制部90控制腔室80內的氛圍，藉此處理單元UTa係能進行期望的氛圍中的基板處理。 Furthermore, the processing unit UTa can have a chamber 80 . In this case, the atmosphere in the chamber 80 is controlled by the control unit 90, whereby the processing unit UTa can perform substrate processing in a desired atmosphere.

控制部90係能控制基板處理裝置1中的各個構成(後述的自轉夾具(spin chuck)5的自轉馬達(spin motor)22、旋轉機構34、升降機構35、供給及吸引機構14、供給及吸引機構15、供給及吸引機構16或者供給及吸引機構30等)的動作。承載器(carrier)C為用以收容基板W之收容器。此外，裝載埠LP為用以保持複數個承載器C之收容器保持機構。索引機器人IR係能在裝載埠LP與基板載置部PS之間搬運基板W。中心機器人CR係能在基板載置部PS與處理單元UTa之間搬運基板W。 The control unit 90 can control the operation of each component in the substrate processing device 1 (the spin motor 22 of the spin chuck 5 described later, the rotating mechanism 34, the lifting mechanism 35, the supply and suction mechanism 14, the supply and suction mechanism 15, the supply and suction mechanism 16 or the supply and suction mechanism 30, etc.). The carrier C is a container for accommodating the substrate W. In addition, the loading port LP is a container holding mechanism for holding a plurality of carriers C. The index robot IR can transport the substrate W between the loading port LP and the substrate mounting part PS. The center robot CR can transport the substrate W between the substrate mounting part PS and the processing unit UTa.

藉由以上的構成，索引機器人IR、基板載置部PS以及中心機器人CR係作為用以在各個處理單元UTa與裝載埠LP之間搬運基板W之搬運機構而發揮作用。 With the above configuration, the index robot IR, the substrate placement unit PS, and the center robot CR function as a transport mechanism for transporting the substrate W between each processing unit UTa and the load port LP.

未處理的基板W係被索引機器人IR從承載器C取出。接著，未處理的基板W係經由基板載置部PS被傳遞至中心機器人CR。 The unprocessed substrate W is taken out from the carrier C by the index robot IR. Then, the unprocessed substrate W is transferred to the center robot CR via the substrate placement unit PS.

中心機器人CR係將該未處理的基板W搬入至處理單元UTa。接著，處理單元UTa係對基板W進行處理。 The center robot CR carries the unprocessed substrate W into the processing unit UTa. Next, the processing unit UTa processes the substrate W.

在處理單元UTa中處理完畢的基板W係被中心機器人CR從處理單元UTa取出。接著，處理完畢的基板W係因應需要經由其他的處理單元UTa後再經由基板載置部PS被傳遞至索引機器人IR。索引機器人IR係將處理完畢的基板W搬入至承載器C。藉由上述動作，對基板W進行處理。 The substrate W processed in the processing unit UTa is taken out from the processing unit UTa by the central robot CR. Then, the processed substrate W is transferred to the index robot IR through other processing units UTa and the substrate loading unit PS as needed. The index robot IR moves the processed substrate W into the carrier C. The substrate W is processed by the above actions.

圖2係概略性地顯示圖1的例子所示的控制部90的構成的例子之圖。控制部90亦可藉由具有電性電路之一般的電腦所構成。具體而言，控制部90係具備中央運算處理裝置(亦即CPU(central processing unit；中央處理單元))91、唯讀記憶體(ROM；read only memory)92、隨機存取記憶體(RAM；random access memory)93、記憶裝置94、輸入部96、顯示部97、通訊部98以及用以將這些構件相互地連接之匯流排線(bus line)95。 FIG. 2 is a diagram schematically showing an example of the structure of the control unit 90 shown in the example of FIG. 1 . The control unit 90 may also be composed of a general computer having electrical circuits. Specifically, the control unit 90 includes a central processing unit (ie, CPU (central processing unit; central processing unit)) 91, a read only memory (ROM; read only memory) 92, and a random access memory (RAM; random access memory) 93, memory device 94, input unit 96, display unit 97, communication unit 98, and a bus line 95 for connecting these components to each other.

ROM92係儲存基本程式。RAM93係作為CPU91進行預定的處理時之作業區域來使用。記憶裝置94係藉由快閃記憶體(flash memory)或者硬碟裝置等之非揮發性記憶裝置所構成。輸入部96係藉由各種開關或者觸摸面板(touch panel)等所構成，且從作業員(operator)接收處理處方(processing recipe)等輸入設定指示。顯示部97係例如藉由液晶顯示裝置以及燈等所構成，且在CPU91的控制下顯示各種資訊。通訊部98係具有經由區域網路(LAN；local area network)等的資料通訊功能。 ROM92 stores basic programs. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The memory device 94 is composed of a non-volatile memory device such as a flash memory or a hard disk device. The input unit 96 is composed of various switches, a touch panel, etc., and receives input setting instructions such as a processing recipe from an operator. The display unit 97 is composed of, for example, a liquid crystal display device, a lamp, etc., and displays various information under the control of the CPU 91 . The communication unit 98 has a data communication function via a local area network (LAN) or the like.

於記憶裝置94預先設定有複數個模式，該複數個模式係針對圖1的基板處理裝置1中的各個構成的控制。CPU91係執行處理程式94P，藉此選擇上述複數個模式中的一個模式並以該模式控制各個構成。此外，處理程式94P亦 可記憶於記錄媒體。若使用此記錄媒體，能將處理程式94P裝載(install)至控制部90。此外，控制部90所執行的功能的一部分或者全部並不一定需要藉由軟體來實現，亦可藉由專用的邏輯電路等硬體來實現。 A plurality of modes are preset in the memory device 94, and the plurality of modes are for controlling each component in the substrate processing device 1 of FIG. 1. The CPU 91 executes the processing program 94P, thereby selecting one of the plurality of modes and controlling each component in the mode. In addition, the processing program 94P can also be stored in a recording medium. If this recording medium is used, the processing program 94P can be loaded (installed) into the control unit 90. In addition, part or all of the functions executed by the control unit 90 do not necessarily need to be implemented by software, and can also be implemented by hardware such as a dedicated logic circuit.

圖3係示意性地顯示本實施形態的處理單元UTa的構成的例子之圖。處理單元UTa中的各個構成的動作係被控制部90控制。此外，圖4係示意性地顯示對向構件26A的構成的例子之剖視圖。 FIG. 3 is a diagram schematically showing an example of the structure of the processing unit UTa in this embodiment. The operations of each component in the processing unit UTa are controlled by the control unit 90 . In addition, FIG. 4 is a cross-sectional view schematically showing an example of the structure of the facing member 26A.

處理單元UTa係具備：箱形的腔室80，係具有內部空間；自轉夾具5，係在腔室80內一邊以水平的姿勢保持一片基板W，一邊使基板W繞著通過基板W的中央部之鉛直的旋轉軸線旋轉；配管108，係連接有噴嘴8，噴嘴8係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管110，係連接有噴嘴10，噴嘴10係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管112，係連接有噴嘴12，噴嘴12係朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管113，係連接有噴嘴13，噴嘴13係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管121，係連接有噴嘴21，噴嘴21係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出惰性氣體；供給及吸引機構14，係將例如鹼性的藥液以及清洗液選擇性地供給至配管108，且吸引噴嘴8內以及配管108內的該藥液以及該清洗液；供給及吸引機構15，係將例如酸性的藥液以及清洗液選擇性地供給至配管110，且吸引噴嘴10內以及配管110內的該藥液以及該清洗液；供給及吸引機構16，係將例如IPA(isopropyl alcohol；異丙醇)等有機溶劑供給至配管112，且吸引噴嘴12內以及配管112內的該有機溶劑；供給及吸引機構30，係將例如疏水化劑(SMT)供給至 配管113，且吸引噴嘴13內以及配管113內的該疏水化劑；惰性氣體供給源36，係用以將惰性氣體供給至配管121；以及筒狀的罩(cup)17，係圍繞自轉夾具5。 The processing unit UTa is equipped with a box-shaped chamber 80 having an internal space, and a rotation jig 5 that holds one substrate W in a horizontal position in the chamber 80 and allows the substrate W to pass through the center of the substrate W. The vertical axis of rotation rotates; the pipe 108 is connected to the nozzle 8, which is used to spray the processing liquid toward the center of the upper surface of the substrate W held by the rotation fixture 5; the pipe 110 is connected to the nozzle 10, which is 10 is used to eject the processing liquid toward the center of the upper surface of the substrate W held by the rotation jig 5; the pipe 112 is connected to the nozzle 12, and the nozzle 12 is directed toward the center of the upper surface of the substrate W held by the rotation jig 5 The processing liquid is ejected; the pipe 113 is connected to the nozzle 13 for ejecting the processing liquid toward the center of the upper surface of the substrate W held by the rotation jig 5; the pipe 121 is connected to the nozzle 21 for The inert gas is sprayed toward the center of the upper surface of the substrate W held by the rotation jig 5; the supply and suction mechanism 14 selectively supplies, for example, an alkaline chemical solution and a cleaning liquid to the pipe 108, and sucks the inside of the nozzle 8 and the chemical liquid and the cleaning liquid in the pipe 108; the supply and suction mechanism 15 selectively supplies, for example, acidic chemical liquid and the cleaning liquid to the pipe 110, and sucks the chemical liquid in the nozzle 10 and the pipe 110 and the cleaning liquid; the supply and suction mechanism 16 supplies an organic solvent such as IPA (isopropyl alcohol; isopropyl alcohol) to the pipe 112 and sucks the organic solvent in the nozzle 12 and the pipe 112; the supply and suction mechanism 30 , for example, a hydrophobizing agent (SMT) is supplied to The pipe 113 sucks the hydrophobizing agent in the nozzle 13 and the pipe 113; the inert gas supply source 36 is used to supply the inert gas to the pipe 121; and the cylindrical cup 17 surrounds the rotation clamp 5 .

上述噴嘴8、噴嘴10、噴嘴13、噴嘴12以及噴嘴21係彼此配置於附近。在此，所謂配置於附近係指：包含彼此配置於相同的腔室80內之情形，尤其是複數個噴嘴同時地配置於被自轉夾具5保持的基板W的上方之情形。 The nozzle 8, the nozzle 10, the nozzle 13, the nozzle 12, and the nozzle 21 are arrange|positioned near each other. Here, the term "arranged nearby" includes the case where they are arranged in the same chamber 80 , and particularly the case where a plurality of nozzles are arranged simultaneously above the substrate W held by the rotation jig 5 .

上述酸性的藥液係例如為HF(hydrofluoric acid；氫氟酸)、已經以純水將氫氟酸(HF)稀釋的稀釋氫氟酸(DHF；dilute hydrofluoric acid)、檸檬酸(citric acid；亦稱為枸椽酸)、硫酸與過氧化氫水的混合溶液(SPM；sulfuric acid/hydrogen peroxide mixture；硫酸過氧化氫混合液)等，於「藥液」亦包含藥液的氛圍。此外，鹼性的藥液係例如為氨(ammonia)與過氧化氫水的混合液(SC1；Standard clean-1；第一標準清洗液，亦即氨水過氧化氫水混和液(ammonia-hydrogen peroxide))、dNH4OH、氫氧化四甲銨(TMAH；tetramethyl ammonium hydroxide)等，於「藥液」亦包含藥液的氛圍。此外，清洗液係例如為水，然而在本實施形態中水為純水(去離子水(DIW；deionized water))、碳酸水、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm以上至100ppm以下)的氨水中的任一種。此外，於「清洗液」亦包含清洗液的氛圍。 The above-mentioned acidic chemical liquid is, for example, HF (hydrofluoric acid; hydrofluoric acid), dilute hydrofluoric acid (DHF; dilute hydrofluoric acid) in which hydrofluoric acid (HF) has been diluted with pure water, or citric acid; (called citric acid), a mixed solution of sulfuric acid and hydrogen peroxide (SPM; sulfuric acid/hydrogen peroxide mixture; sulfuric acid hydrogen peroxide mixture), etc., the "medical solution" also includes the atmosphere of the medical solution. In addition, the alkaline chemical solution is, for example, a mixture of ammonia and hydrogen peroxide (SC1; Standard clean-1; the first standard cleaning solution, that is, ammonia-hydrogen peroxide mixture) )), dNH 4 OH, tetramethyl ammonium hydroxide (TMAH; tetramethyl ammonium hydroxide), etc., "medical solution" also includes the atmosphere of the medical solution. In addition, the cleaning liquid system is water, for example. However, in this embodiment, the water is pure water (deionized water (DIW; deionized water)), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and dilute concentration (for example, 10 ppm or more). to 100 ppm or less) in ammonia water. In addition, "cleaning fluid" also includes the atmosphere of the cleaning fluid.

此外，有機溶劑係除了IPA之外亦可為例如甲醇(methanole)、乙醇(ethanol)、丙酮(acetone)、EG(ethylene glycol；乙二醇)或者氫氟醚(hydrofluoroether)等。此外，作為有機溶劑，不僅是僅由單體成分所構成之情形，亦可為與其他的成分混合之液體。例如，亦可為IPA與丙酮的混合液，亦可為IPA與甲醇的混合液。此外，疏水化劑係可為矽系的疏水化劑，亦可為金屬系的疏水化劑。 In addition, in addition to IPA, the organic solvent may be, for example, methanole, ethanol, acetone, EG (ethylene glycol; ethylene glycol), hydrofluoroether, or the like. In addition, the organic solvent does not only consist of a single component, but may also be a liquid mixed with other components. For example, it may be a mixture of IPA and acetone, or a mixture of IPA and methanol. In addition, the hydrophobizing agent may be a silicone-based hydrophobizing agent or a metal-based hydrophobizing agent.

此外，圖3以及圖4的例子所示的噴嘴的數量並非是限定性的，例如亦可進一步追加用以噴出藥液之噴嘴。 In addition, the number of nozzles shown in the examples of FIG. 3 and FIG. 4 is not limiting, and for example, nozzles for spraying liquid medicine may be further added.

腔室80係具備：箱狀的隔壁18，係收容自轉夾5或者噴嘴等；風扇過濾器單元(FFU；fan filter unit)19，係將已藉由過濾器等過濾過的清淨空氣從隔壁18的上部輸送至隔壁18內；以及排氣導管20，係從隔壁18的下部將腔室80內的氣體排出。 The chamber 80 is provided with: a box-shaped partition wall 18 that accommodates the rotation clamp 5 or a nozzle, etc.; and a fan filter unit (FFU; fan filter unit) 19 that removes clean air filtered by a filter or the like from the partition wall 18 The upper part is transported to the partition wall 18; and the exhaust duct 20 is used to discharge the gas in the chamber 80 from the lower part of the partition wall 18.

自轉夾具5係具備：自轉馬達22；自轉軸(spin axis)23，係藉由自轉馬達22而驅動；以及圓板狀的自轉基座(spin base)24，係略水平地安裝於自轉軸23的上端。於自轉基座24的上表面的周緣部配置有複數個夾持構件25。複數個夾持構件25係隔著適當的間隔配置於基板W的周方向。 The spin clamp 5 is equipped with: a spin motor 22; a spin axis 23 driven by the spin motor 22; and a disk-shaped spin base 24 installed approximately horizontally on the upper end of the spin axis 23. A plurality of clamping members 25 are arranged on the periphery of the upper surface of the spin base 24. The plurality of clamping members 25 are arranged in the circumferential direction of the substrate W at appropriate intervals.

此外，自轉夾具5並未限定於夾持式的夾具，例如亦可為用以真空吸附基板W的背面之真空吸附式(亦即真空夾具)的夾具。 In addition, the rotation clamp 5 is not limited to a clamping type clamp, and may also be a vacuum adsorption type (ie, vacuum clamp) clamp used to vacuum adsorb the back surface of the substrate W.

此外，處理單元UTa係具備：對向構件26A，係與被自轉夾具5保持的基板W的上表面對向。圖5係顯示對向構件26A的例子之仰視圖。 Furthermore, the processing unit UTa is provided with an opposing member 26A that faces the upper surface of the substrate W held by the rotation jig 5 . FIG. 5 is a bottom view showing an example of the facing member 26A.

對向構件26A係具備：阻隔板27A；以及旋轉軸28，係能夠與阻隔板27A一體性地旋轉。阻隔板27A為具有比基板W還大的直徑之圓板狀的構成。於阻隔板27A的下表面具有：基板對向面29，係由圓形的平坦面所構成，並與基板W的上表面全域對向；以及環狀的爪部127，係在基板對向面29的周緣部中朝向下方突出。於基板對向面29的中央部形成有上下地貫通阻隔板27A之圓筒狀的貫通孔132。 The opposing member 26A is provided with the baffle plate 27A and the rotation shaft 28, and is rotatable integrally with the baffle plate 27A. The barrier plate 27A has a disc-shaped structure having a larger diameter than the substrate W. The lower surface of the barrier plate 27A has: a substrate-facing surface 29, which is a circular flat surface and faces the entire upper surface of the substrate W; and an annular claw portion 127, which is formed on the substrate-facing surface. 29 protrudes downward in the peripheral portion. A cylindrical through hole 132 vertically penetrating the barrier plate 27A is formed in the center of the substrate facing surface 29 .

旋轉軸28係通過阻隔板27A的中心，並能夠繞著於鉛直方向延伸的旋轉軸線A2旋轉。此外，旋轉軸線A2係與基板W的旋轉軸線A1一致。旋轉軸 28為圓筒狀。旋轉軸28的內部空間係連通於阻隔板27A的貫通孔132。旋轉軸28係能夠相對旋轉地被支撐臂31支撐，支撐臂31係在阻隔板27A的上方水平地延伸。在本實施形態中，支撐臂31係能夠至少於上下方向(鉛直方向)移動。 The rotation axis 28 passes through the center of the baffle plate 27A and is rotatable around the rotation axis A2 extending in the vertical direction. In addition, the rotation axis A2 coincides with the rotation axis A1 of the substrate W. axis of rotation 28 is cylindrical. The internal space of the rotating shaft 28 is connected to the through hole 132 of the baffle plate 27A. The rotation shaft 28 is supported by a support arm 31 so as to be relatively rotatable. The support arm 31 extends horizontally above the baffle plate 27A. In this embodiment, the support arm 31 is movable at least in the up and down direction (vertical direction).

於貫通孔132的內部設置有軸噴嘴32，軸噴嘴32係沿著阻隔板27A的旋轉軸線A2上下地延伸。於軸噴嘴32的罩殼(casing)33內配置有於上下方向(鉛直方向)延伸的噴嘴8、噴嘴10、噴嘴12、噴嘴13以及噴嘴21。罩殼33係在貫通孔132的內部中以與阻隔板27A以及旋轉軸28非接觸的狀態配置。 An axial nozzle 32 is provided inside the through hole 132, and the axial nozzle 32 extends vertically along the rotation axis A2 of the baffle plate 27A. The nozzles 8, 10, 12, 13, and 21 extending in the vertical direction (vertical direction) are arranged in the casing 33 of the axial nozzle 32. The casing 33 is arranged inside the through hole 132 in a non-contact state with the baffle plate 27A and the rotation axis 28.

於阻隔板27A結合有包含電動馬達等之旋轉機構34。旋轉機構34係使阻隔板27A以及旋轉軸28相對於支撐臂31繞著旋轉軸線A2旋轉。 The baffle plate 27A is combined with a rotating mechanism 34 including an electric motor, etc. The rotating mechanism 34 causes the baffle plate 27A and the rotating shaft 28 to rotate around the rotating axis A2 relative to the supporting arm 31.

於支撐臂31結合有包含電動馬達或者滾珠螺桿(ball screw)等之升降機構35。升降機構35係將對向構件26A、噴嘴8、噴嘴10、噴嘴12、噴嘴13以及噴嘴21與支撐臂31一起於鉛直方向升降。升降機構35係使阻隔板27A、噴嘴8、噴嘴10、噴嘴12、噴嘴13以及噴嘴21在接近位置與退避位置之間升降，接近位置為阻隔板27A的基板對向面29接近被自轉夾具5保持的基板W的上表面之位置，退避位置為設置於接近位置的上方之位置。升降機構35係在接近位置與退避位置之間的各個位置保持阻隔板27A。 A lifting mechanism 35 including an electric motor or a ball screw is coupled to the support arm 31 . The lifting mechanism 35 raises and lowers the facing member 26A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 together with the support arm 31 in the vertical direction. The lifting mechanism 35 raises and lowers the baffle plate 27A, the nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 between the approach position and the retracted position. The approach position is when the substrate-facing surface 29 of the baffle plate 27A approaches the rotating fixture 5 The position of the upper surface of the held substrate W and the retreat position are set above the approach position. The lifting mechanism 35 holds the baffle plate 27A at each position between the approaching position and the retracted position.

當升降機構35使對向構件26A下降時，阻隔板27A以及軸噴嘴32係被自轉基座24中的未圖示的支撐部接住。而且，在支撐臂31側與旋轉軸28側分離後，阻隔板27A係與自轉基座24的旋轉同步地旋轉。 When the lifting mechanism 35 lowers the opposing member 26A, the baffle plate 27A and the shaft nozzle 32 are received by a support portion (not shown) in the rotation base 24 . Furthermore, after the support arm 31 side and the rotation shaft 28 side are separated, the barrier plate 27A rotates in synchronization with the rotation of the rotation base 24 .

如圖3的例子所示，罩17係配置於比被自轉夾具5保持的基板W還外側。罩17係圍繞自轉基座24的周圍。當在自轉夾具5使基板W旋轉的狀態下對基板W供給處理液時，被供給至基板W的處理液係被甩離至基板W的周圍。在對 基板W供給處理液時，朝向上方開放的罩17的上端部17a係配置於比自轉基座24還上方。因此，被排出至基板W的周圍的處理液(具體而言為藥液、清洗液、有機溶劑或者疏水化劑等)係被罩17接住。而且，被罩17接住的處理液係被輸送至回收裝置或者排液裝置(在此未圖示)等。 As shown in the example of FIG. 3 , the cover 17 is arranged outside the substrate W held by the rotating clamp 5. The cover 17 surrounds the rotating base 24. When the processing liquid is supplied to the substrate W while the rotating clamp 5 rotates the substrate W, the processing liquid supplied to the substrate W is thrown around the substrate W. When the processing liquid is supplied to the substrate W, the upper end 17a of the cover 17 opened upward is arranged above the rotating base 24. Therefore, the processing liquid (specifically, a chemical solution, a cleaning solution, an organic solvent, or a hydrophobic agent, etc.) discharged around the substrate W is received by the cover 17. Moreover, the processing liquid received by the cover 17 is transported to a recovery device or a liquid discharge device (not shown here), etc.

[針對供給及吸引機構] [For supply and attraction agencies]

圖6係示意性地顯示圖3以及圖4的例子所示的供給及吸引機構14的構成的例子之圖。此外，供給及吸引機構15的構成、供給及吸引機構16的構成以及供給及吸引機構30的構成係除了以各個機構所供給的處理液的種類除外，與圖6的例子所示的構成相同。 FIG6 schematically shows an example of the configuration of the supply and suction mechanism 14 shown in the examples of FIG3 and FIG4. In addition, the configuration of the supply and suction mechanism 15, the configuration of the supply and suction mechanism 16, and the configuration of the supply and suction mechanism 30 are the same as those shown in the example of FIG6, except for the type of treatment liquid supplied by each mechanism.

如圖6的例子所示，供給及吸引機構14係具備：連接配管44，係連接於配管108的上游側的端部；排液配管45，係進一步地連接於連接配管44；閥51，係設置於排液配管45；藥液配管46，係連接於連接配管44的上游側；閥52，係設置於藥液配管46；清洗液配管47，係連接於連接配管44的上游側；閥53，係設置於清洗液配管47；閥50，係設置於比連接配管44還下游側的配管108；吸引配管48，係從比閥50還下游側的配管108分歧；調整閥54，係設置於吸引配管48；吸引裝置55，係進一步地連接於吸引配管48；吸引配管49，係進一步地連接於連接配管44；閥56，係設置於吸引配管49；以及吸引裝置57，係進一步地連接於吸引配管49。排液配管45係連接於機外的排液設備。此外，亦可為具備吸引裝置55以及吸引裝置57中的任一者。 As shown in the example of FIG. 6 , the supply and suction mechanism 14 includes a connecting pipe 44 connected to the upstream end of the pipe 108 , a drain pipe 45 further connected to the connecting pipe 44 , and a valve 51 . The liquid drain pipe 45 is provided; the chemical liquid pipe 46 is connected to the upstream side of the connecting pipe 44; the valve 52 is provided to the chemical liquid pipe 46; the cleaning liquid pipe 47 is connected to the upstream side of the connecting pipe 44; the valve 53 , is provided in the cleaning liquid pipe 47; the valve 50 is provided in the pipe 108 downstream of the connecting pipe 44; the suction pipe 48 is branched from the pipe 108 downstream of the valve 50; and the adjustment valve 54 is provided in The suction pipe 48; the suction device 55 is further connected to the suction pipe 48; the suction pipe 49 is further connected to the connecting pipe 44; the valve 56 is provided in the suction pipe 49; and the suction device 57 is further connected to Suction piping 49. The drain pipe 45 is connected to the drain equipment outside the machine. In addition, either the suction device 55 or the suction device 57 may be provided.

吸引裝置55為虹吸(siphon)式的吸引裝置。在此，所謂虹吸式的吸引裝置係下述裝置：以液體填滿配管(吸引配管48)內，並利用虹吸的原理吸引(排 液)配管108內的液體。與真空產生器或者吸引器(aspirator)等之抽氣器(ejector)式的吸引裝置相比，依據虹吸式的吸引裝置能抑制用以吸引的能量消耗。 The suction device 55 is a siphon type suction device. Here, the so-called siphon type suction device is a device that fills the pipe (suction pipe 48) with liquid and uses the principle of siphon to suck (discharge) the liquid in the pipe 108. Compared with the ejector type suction device such as a vacuum generator or an aspirator, the siphon type suction device can suppress the energy consumption for suction.

吸引裝置57為抽氣器式的吸引裝置。與虹吸式的吸引裝置相比，抽氣器式的吸引裝置係吸引力強(吸引速度快)且能夠吸引的液流量多。 The suction device 57 is an aspirator type suction device. Compared with the siphon type suction device, the aspirator type suction device has a stronger suction force (faster suction speed) and can suck a larger amount of liquid.

當在其他的閥關閉的狀態下閥52以及閥50打開時，從藥液配管46對配管108供給藥液，並從噴嘴8的噴出口朝向下方噴出藥液。 When the valve 52 and the valve 50 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the pipe 108 and the chemical solution is discharged downward from the discharge port of the nozzle 8 .

此外，當在其他的閥關閉的狀態下閥52以及閥51打開時，從藥液配管46對排液配管45供給藥液。藉此，能將藥液配管46內的藥液予以排液(廢棄)。 Furthermore, when the valve 52 and the valve 51 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the drain pipe 45 . Thereby, the chemical solution in the chemical solution pipe 46 can be drained (wasted).

此外，當在其他的閥關閉的狀態下閥53以及閥50打開時，從閥53對配管108供給清洗液，並從噴嘴8的噴出口朝向下方噴出清洗液。 Furthermore, when valve 53 and valve 50 are opened while the other valves are closed, cleaning liquid is supplied from valve 53 to pipe 108, and the cleaning liquid is sprayed downward from the spray port of nozzle 8.

此外，當在其他的閥關閉的狀態下閥53以及閥51打開時，從閥53對排液配管45供給清洗液。藉此，能將清洗液配管47內的清洗液予以排液(廢棄)。 Furthermore, when the valve 53 and the valve 51 are opened while the other valves are closed, the cleaning liquid is supplied from the valve 53 to the drain pipe 45 . Thereby, the cleaning liquid in the cleaning liquid pipe 47 can be drained (wasted).

當在吸引裝置55的作動狀態中調整閥54打開時，吸引裝置55的動作變成有效，吸引配管48的內部被吸引。因此，噴嘴8、配管108以及吸引配管48所含有的處理液(藥液或者清洗液)係被引入至吸引配管48。此外，由於吸引裝置55的吸引力較弱，因此吸引裝置55的吸引速度係較慢。 When the adjustment valve 54 is opened in the operating state of the suction device 55, the action of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or cleaning liquid) contained in the nozzle 8, the pipe 108 and the suction pipe 48 is introduced into the suction pipe 48. In addition, since the suction force of the suction device 55 is weak, the suction speed of the suction device 55 is slow.

此外，吸引裝置57係設定成例如常態作動狀態。此外，亦可藉由閥動作開始吸引。當在吸引裝置57的作動狀態中閥56打開時，吸引裝置57的動作係變成有效，吸引配管49的內部被吸引。因此，吸引配管49、連接配管44、配管108以及噴嘴8所含有的處理液(藥液或者清洗液)係被引入至吸引配管49。此外，由於與吸引裝置55的情形相比吸引裝置57的吸引力較強，因此與吸引裝置55的情形相比吸引裝置57的吸引速度較快。 In addition, the suction device 57 is set to, for example, a normal operating state. In addition, suction can also be started by valve action. When the valve 56 is opened in the operating state of the suction device 57, the action of the suction device 57 becomes effective, and the inside of the suction piping 49 is sucked. Therefore, the treatment liquid (chemical liquid or cleaning liquid) contained in the suction piping 49, the connecting piping 44, the piping 108, and the nozzle 8 is introduced into the suction piping 49. In addition, since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed of the suction device 57 is faster than that of the suction device 55.

[針對基板處理裝置的動作] [Actions for substrate processing equipment]

接著，一邊參照圖7至圖10一邊說明本實施形態的基板處理裝置的動作。在此，圖7、圖8、圖9以及圖10係用以說明基板處理裝置的動作中之尤其是供給及吸引機構14以及供給及吸引機構15的動作之示意圖。 Next, the operation of the substrate processing device of this embodiment will be described with reference to Figures 7 to 10. Here, Figures 7, 8, 9, and 10 are schematic diagrams used to illustrate the operation of the substrate processing device, especially the operation of the supply and suction mechanism 14 and the supply and suction mechanism 15.

本實施形態的基板處理裝置所為之基板處理方法係具備下述步驟：對已搬運至處理單元UTa的基板W進行藥液處理；對已進行了藥液處理的基板W進行洗淨處理；對已進行了洗淨處理的基板W進行乾燥處理；以及將已進行了乾燥處理的基板W從處理單元UTa搬出。以下，更詳細地說明上述基板處理裝置的動作所含有的藥液處理。 The substrate processing method of the substrate processing device of this embodiment has the following steps: treating the substrate W transported to the processing unit UTa with a chemical solution; cleaning the substrate W treated with the chemical solution; drying the substrate W treated with the chemical solution; and removing the substrate W treated with the chemical solution from the processing unit UTa. The chemical solution treatment included in the operation of the above-mentioned substrate processing device is described in more detail below.

首先，如圖7的例子所示，藉由控制器90的控制將圖6所示的閥50以及閥52開放，經由配管108供給藥液200。如此，從噴嘴8的噴出口對基板W噴出藥液200。 First, as shown in the example of FIG. 7 , the valve 50 and the valve 52 shown in FIG. 6 are opened under the control of the controller 90 , and the chemical solution 200 is supplied through the pipe 108 . In this way, the chemical solution 200 is ejected onto the substrate W from the ejection port of the nozzle 8 .

接著，如圖8的例子所示，藉由控制部90的控制將圖6所示的閥50以及閥53開放，經由配管108供給清洗液201。如此，從噴嘴8的噴出口對基板W噴出清洗液201。噴出清洗液201的時間係例如為10秒以上至30秒以下。 Next, as shown in the example of FIG. 8 , the valve 50 and the valve 53 shown in FIG. 6 are opened under the control of the control unit 90 , and the cleaning liquid 201 is supplied through the pipe 108 . In this way, the cleaning liquid 201 is sprayed onto the substrate W from the discharge port of the nozzle 8 . The time for spraying the cleaning liquid 201 is, for example, from 10 seconds to 30 seconds.

接著，如圖9的例子所示，停止噴出清洗液201且藉由控制部90的控制將圖6所示的閥50以及閥56開放，將吸引配管49、連接配管44、配管108以及噴嘴8所含有的藥液或者清洗液朝吸引配管49引入。此時，被基板W與阻隔板27A圍繞的密閉空間中的藥液200以及清洗液201的氛圍亦會經由位於基板W的上方之噴嘴8的噴出口朝吸引配管49引入。進行吸引動作的時間係例如為10秒以上至30秒以下。此外，吸引動作的結束亦可例如為藉由感測器等測量吸引量並 在吸引量超過臨限值的時間點結束。此外，亦可一併開放調整閥54，藉此將配管108以及噴嘴8所含有的藥液200或者清洗液201朝吸引配管48引入。 Next, as shown in the example of FIG. 9 , the spraying of the cleaning liquid 201 is stopped and the valve 50 and the valve 56 shown in FIG. 6 are opened by the control of the control unit 90, and the liquid or cleaning liquid contained in the suction pipe 49, the connecting pipe 44, the pipe 108 and the nozzle 8 is introduced into the suction pipe 49. At this time, the atmosphere of the liquid 200 and the cleaning liquid 201 in the closed space surrounded by the substrate W and the baffle plate 27A is also introduced into the suction pipe 49 through the nozzle of the nozzle 8 located above the substrate W. The time for performing the suction operation is, for example, more than 10 seconds and less than 30 seconds. In addition, the end of the suction operation can also be, for example, by measuring the suction amount by a sensor or the like and ending at a time point when the suction amount exceeds a critical value. In addition, the adjusting valve 54 may be opened at the same time to introduce the liquid medicine 200 or the cleaning liquid 201 contained in the piping 108 and the nozzle 8 into the suction piping 48.

另一方面，如圖9的例子所示，藉由控制部90的控制將對應的閥開放，經由配管110供給清洗液202。如此，從噴嘴10的噴出口對基板W噴出清洗液202。此外，清洗液202係可為與清洗液201相同種類的液體，亦可為不同種類的液體。此外，與上述同樣地，被基板W與阻隔板27A圍繞的密閉空間中的清洗液202的氛圍係會經由噴嘴8的噴出口朝吸引配管49引入。 On the other hand, as shown in the example of FIG. 9 , the corresponding valve is opened under the control of the control unit 90 and the cleaning liquid 202 is supplied through the pipe 110 . In this way, the cleaning liquid 202 is sprayed onto the substrate W from the discharge port of the nozzle 10 . In addition, the cleaning liquid 202 may be the same type of liquid as the cleaning liquid 201 or a different type of liquid. In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the sealed space surrounded by the substrate W and the baffle plate 27A is introduced into the suction pipe 49 through the discharge port of the nozzle 8 .

接著，如圖10的例子所示，在停止噴嘴8中的引吸動作後，藉由控制部90的控制將對應的閥開放，經由配管110供給藥液203。如此，從噴嘴10的噴出口對基板W噴出藥液203。 Next, as shown in the example of FIG. 10 , after the suction action in the nozzle 8 is stopped, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the pipe 110. In this way, the chemical solution 203 is sprayed from the nozzle outlet of the nozzle 10 to the substrate W.

依據上述，由於在停止經由噴嘴8的藥液200等之吸引動作後開始從噴嘴10供給藥液203，因此抑制被基板W與阻隔板27A圍繞的密閉空間中的藥液203的氛圍被吸引至噴嘴8內以及配管108內。因此，在噴嘴8內以及配管108內藥液200與藥液203混合之情形係被充分地抑制。 According to the above, since the supply of the chemical solution 203 from the nozzle 10 is started after the suction operation of the chemical solution 200 etc. through the nozzle 8 is stopped, the atmosphere of the chemical solution 203 in the sealed space surrounded by the substrate W and the barrier plate 27A is suppressed from being sucked into Inside the nozzle 8 and inside the pipe 108 . Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 8 and the pipe 108 is sufficiently suppressed.

此外，在噴嘴8以及噴嘴10雙方中以時間順序依序進行清洗液的噴出，藉此能在噴嘴8中的吸引動作之前以及吸引動作之後噴出清洗液，因此能使殘存於基板W的上表面的藥液200的量減少並能洗淨基板W的上表面，且進一步地於基板W的上表面形成有清洗液的液膜，藉此能抑制基板W的污染。 In addition, by ejecting the cleaning liquid in time sequence from both the nozzle 8 and the nozzle 10 , the cleaning liquid can be ejected before the suction operation in the nozzle 8 and after the suction operation, so that the cleaning liquid can be prevented from remaining on the upper surface of the substrate W. The amount of the chemical liquid 200 is reduced and the upper surface of the substrate W can be cleaned, and a liquid film of the cleaning liquid is further formed on the upper surface of the substrate W, thereby suppressing contamination of the substrate W.

此外，亦可藉由與噴嘴8以及噴嘴10不同的其他的噴嘴(例如噴嘴12或者噴嘴13)噴出清洗液。在此情形中，雖然需要在各個噴嘴中進行吸引動作，然而期望亦在停止上述其他的噴嘴中的吸引動作後開始經由噴嘴10供給藥液 203。此原因在於：即使在藥液203被吸引至用以噴出清洗液之噴嘴內之情形中，在後續之步驟中從該噴嘴噴出其他的藥液時仍然會產生藥液的混合。 In addition, the cleaning liquid may also be sprayed through other nozzles (such as the nozzle 12 or the nozzle 13) different from the nozzle 8 and the nozzle 10. In this case, although it is necessary to perform the suction operation in each nozzle, it is desirable to start supplying the chemical solution through the nozzle 10 after stopping the suction operation in the other nozzles. 203. The reason for this is that even if the chemical liquid 203 is attracted into the nozzle for spraying the cleaning liquid, mixing of the chemical liquids will still occur when other chemical liquids are sprayed from the nozzle in subsequent steps.

在此，在本實施形態的基板處理方法中，只要在停止噴嘴8中的吸引動作後開始經由噴嘴10供給藥液203，則亦可皆不進行經由噴嘴8供給清洗液201以及經由噴嘴10供給清洗液202。然而，藉由在進行噴嘴8中的吸引動作之期間進行上述清洗液的供給，除了能洗淨基板W的上表面之外還能藉由於基板W的上表面形成清洗液的液膜來抑制基板W的污染。 Here, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 10 is started after the suction action in the nozzle 8 is stopped, the supply of the cleaning solution 201 through the nozzle 8 and the supply of the cleaning solution 202 through the nozzle 10 may not be performed. However, by supplying the above-mentioned cleaning solution during the suction action in the nozzle 8, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film of the cleaning solution on the upper surface of the substrate W.

依據上述，期望噴嘴8中的吸引動作係在進行清洗液的供給之期間結束，亦即期望噴嘴8中的吸引動作係比清洗液的供給動作還先結束。 Based on the above, it is desired that the suction operation in the nozzle 8 is completed while the cleaning liquid is being supplied, that is, it is desired that the suction operation in the nozzle 8 be completed before the supply operation of the cleaning liquid.

此外，亦可進行經由噴嘴8供給清洗液201以及經由噴嘴10供給清洗液202中的任一者。 In addition, either supply of the cleaning liquid 201 through the nozzle 8 or supply of the cleaning liquid 202 through the nozzle 10 may be performed.

此外，在使用疏水化劑作為藥液之情形中，由於無法使疏水化劑與純水等清洗液混合，因此在吸引作為藥液的疏水化劑之期間在基板W上預先攪拌(paddling)疏水化劑，同時以惰性氣體(氮氣(N2))置換基板W上的氛圍。而且，在停止吸引作為藥液的疏水化劑後，開始噴出其他的藥液。 In addition, when using a hydrophobizing agent as a chemical solution, since the hydrophobizing agent cannot be mixed with a cleaning solution such as pure water, the hydrophobizing agent as a chemical solution is preliminarily stirred (paddling) on the substrate W while the hydrophobizing agent is being sucked. agent, and at the same time replace the atmosphere on the substrate W with an inert gas (nitrogen (N 2 )). Then, after the suction of the hydrophobizing agent as the chemical solution is stopped, other chemical solutions are started to be ejected.

[第二實施形態] [Second Embodiment]

說明本實施形態的基板處理方法以及基板處理裝置。此外，在以下的說明中，針對在與以上所記載的實施形態中所說明的構成要素同樣的構成要素附上相同的元件符號來顯示，並適當地省略詳細的說明。 The substrate processing method and substrate processing apparatus according to this embodiment will be described. In addition, in the following description, the same reference numerals are attached to the same components as those described in the embodiments described above, and detailed descriptions are appropriately omitted.

[針對基板處理裝置的構成] [Regarding the structure of the substrate processing device]

圖11係示意性地顯示本實施形態的處理單元UT的構成的例子之圖。處理單元UT中的各個構成的動作係被控制部90控制。此外，圖12係示意性地顯示對向構件26的構成的例子之剖視圖。 FIG. 11 is a diagram schematically showing an example of the structure of the processing unit UT of this embodiment. The operations of each component in the processing unit UT are controlled by the control unit 90 . In addition, FIG. 12 is a cross-sectional view schematically showing an example of the structure of the facing member 26.

處理單元UT係具備腔室80、自轉夾具5、配管108、配管110、配管112、配管113、配管121、供給及吸引機構14、供給及吸引機構15、供給及吸引機構16、供給及吸引機構30、惰性氣體供給源36以及罩17。 The processing unit UT system includes a chamber 80, a rotation jig 5, a pipe 108, a pipe 110, a pipe 112, a pipe 113, a pipe 121, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, and a supply and suction mechanism. 30. Inert gas supply source 36 and cover 17 .

此外，處理單元UT係具備對向構件26，對向構件26係與被自轉夾具5保持的基板W的上表面對向。圖13係顯示對向構件26的例子之仰視圖。 In addition, the processing unit UT has an opposing member 26, and the opposing member 26 is opposed to the upper surface of the substrate W held by the rotating fixture 5. FIG. 13 is a bottom view showing an example of the opposing member 26.

對向構件26係具備：阻隔板27；以及旋轉軸28，係能夠與阻隔板27一體性地旋轉。阻隔板27為具有與基板W大致相同的直徑或者比基板W還大的直徑之圓板狀的構成。於阻隔板27的下表面具有：基板對向面29，係由圓形的平坦面所構成，並與基板W的上表面全域對向。於基板對向面29的中央部形成有上下地貫通阻隔板27之圓筒狀的貫通孔132。 The opposing member 26 is provided with the baffle plate 27 and the rotation shaft 28, and is rotatable integrally with the baffle plate 27. The barrier plate 27 has a disk-shaped structure having approximately the same diameter as the substrate W or a diameter larger than the substrate W. The lower surface of the barrier plate 27 has a substrate-facing surface 29 , which is a circular flat surface and faces the entire upper surface of the substrate W. A cylindrical through hole 132 that vertically penetrates the barrier plate 27 is formed in the center of the substrate facing surface 29 .

旋轉軸28係通過阻隔板27的中心，並能夠繞著於鉛直方向延伸的旋轉軸線A2旋轉。此外，旋轉軸線A2係與基板W的旋轉軸線A1一致。旋轉軸28為圓筒狀。旋轉軸28的內部空間係連通於阻隔板27A的貫通孔132。旋轉軸28係能夠相對旋轉地被支撐臂31支撐，支撐臂31係在阻隔板27的上方水平地延伸。在本實施形態中，支撐臂31係能夠至少於上下方向(鉛直方向)移動。 The rotation axis 28 passes through the center of the baffle plate 27 and can rotate around the rotation axis A2 extending in the lead straight direction. In addition, the rotation axis A2 is consistent with the rotation axis A1 of the substrate W. The rotation axis 28 is cylindrical. The internal space of the rotation axis 28 is connected to the through hole 132 of the baffle plate 27A. The rotation axis 28 is supported by the support arm 31 so as to be relatively rotatable, and the support arm 31 extends horizontally above the baffle plate 27. In this embodiment, the support arm 31 can move at least in the up and down direction (lead straight direction).

於貫通孔132的內部設置有軸噴嘴32，軸噴嘴32係沿著阻隔板27的旋轉軸線A2上下地延伸。於軸噴嘴32的罩殼33內配置有於上下方向(鉛直方向)延伸的噴嘴8、噴嘴10、噴嘴12、噴嘴13以及噴嘴21。罩殼33係在貫通孔132的內部中以與阻隔板27以及旋轉軸28非接觸的狀態配置。 A shaft nozzle 32 is provided inside the through hole 132 , and the shaft nozzle 32 extends vertically along the rotation axis A2 of the baffle plate 27 . The nozzle 8, the nozzle 10, the nozzle 12, the nozzle 13, and the nozzle 21 extending in the up-down direction (vertical direction) are arrange|positioned in the cover 33 of the shaft nozzle 32. The cover 33 is disposed inside the through hole 132 in a non-contact state with the barrier plate 27 and the rotation shaft 28 .

於阻隔板27結合有包含電動馬達等之旋轉機構34。旋轉機構34係使阻隔板27以及旋轉軸28相對於支撐臂31繞著旋轉軸線A2旋轉。 The baffle plate 27 is combined with a rotating mechanism 34 including an electric motor, etc. The rotating mechanism 34 causes the baffle plate 27 and the rotating shaft 28 to rotate around the rotating axis A2 relative to the supporting arm 31.

於支撐臂31結合有包含電動馬達或者滾珠螺桿等之升降機構35。升降機構35係將對向構件26、噴嘴8、噴嘴10、噴嘴12、噴嘴13以及噴嘴21與支撐臂31一起於鉛直方向升降。升降機構35係使阻隔板27、噴嘴8、噴嘴10、噴嘴12、噴嘴13以及噴嘴21在接近位置與退避位置之間升降，接近位置為阻隔板27的基板對向面29接近被自轉夾具5保持的基板W的上表面之位置，退避位置為設置於接近位置的上方之位置。升降機構35係在接近位置與退避位置之間的各個位置保持阻隔板27。 A lifting mechanism 35 including an electric motor, a ball screw, etc. is coupled to the support arm 31 . The lifting mechanism 35 lifts and lowers the facing member 26 , the nozzle 8 , the nozzle 10 , the nozzle 12 , the nozzle 13 , and the nozzle 21 together with the support arm 31 in the vertical direction. The lifting mechanism 35 raises and lowers the baffle plate 27 , the nozzle 8 , the nozzle 10 , the nozzle 12 , the nozzle 13 and the nozzle 21 between the approaching position and the retracted position. The approaching position is when the substrate-facing surface 29 of the baffle plate 27 is close to the rotating fixture 5 The position of the upper surface of the held substrate W and the retreat position are set above the approach position. The lifting mechanism 35 holds the baffle plate 27 at each position between the approaching position and the retracted position.

[針對基板處理裝置的動作] [Actions for substrate processing equipment]

接著，說明本實施形態的基板處理裝置的動作。本實施形態的基板處理裝置所為之基板處理方法係具備下述步驟：對已搬運至處理單元UT的基板W進行藥液處理；對已進行了藥液處理的基板W進行洗淨處理；對已進行了洗淨處理的基板W進行乾燥處理；以及將已進行了乾燥處理的基板W從處理單元UT搬出。 Next, the operation of the substrate processing apparatus of this embodiment will be described. The substrate processing method of the substrate processing apparatus of this embodiment includes the following steps: performing chemical liquid treatment on the substrate W that has been transported to the processing unit UT; cleaning the substrate W that has been subjected to chemical liquid treatment; The cleaned substrate W is dried; and the dried substrate W is unloaded from the processing unit UT.

上述藥液處理係與第一實施形態所示的情形相同地，首先，藉由控制器90的控制將圖6所示的閥50以及閥52開放，經由配管108供給藥液200(然而，配管108係連接於對向構件26)。如此，從噴嘴8的噴出口對基板W噴出藥液200。 The above-mentioned liquid treatment is the same as that shown in the first embodiment. First, valves 50 and 52 shown in FIG. 6 are opened by the control of controller 90, and liquid 200 is supplied through pipe 108 (however, pipe 108 is connected to the opposing member 26). In this way, liquid 200 is sprayed from the nozzle 8 to the substrate W.

接著，藉由控制部90的控制將圖6所示的閥50以及閥53開放，經由配管108供給清洗液201。如此，從噴嘴8的噴出口對基板W噴出清洗液201。 Next, the valve 50 and the valve 53 shown in FIG. 6 are opened by the control of the control unit 90, and the cleaning liquid 201 is supplied through the pipe 108. In this way, the cleaning liquid 201 is sprayed from the nozzle 8 to the substrate W.

接著，藉由控制部90的控制將圖6所示的閥50以及閥56開放，將吸引配管49、連接配管44、配管108以及噴嘴8所含有的藥液或者清洗液朝吸引 配管49引入。此時，被基板W與阻隔板27圍繞的密閉空間中的藥液200以及清洗液201的氛圍亦會經由噴嘴8的噴出口朝吸引配管49引入。此外，亦可一併開放調整閥54，藉此將配管108以及噴嘴8所含有的藥液或者清洗液朝吸引配管48引入。 Next, the valve 50 and the valve 56 shown in FIG. 6 are opened by the control of the control unit 90, and the liquid medicine or cleaning liquid contained in the suction piping 49, the connecting piping 44, the piping 108, and the nozzle 8 are introduced into the suction piping 49. At this time, the atmosphere of the liquid medicine 200 and the cleaning liquid 201 in the closed space surrounded by the substrate W and the baffle plate 27 is also introduced into the suction piping 49 through the nozzle 8. In addition, the adjustment valve 54 can also be opened at the same time to introduce the liquid medicine or cleaning liquid contained in the piping 108 and the nozzle 8 into the suction piping 48.

另一方面，藉由控制部90的控制將對應的閥開放，經由配管110供給清洗液202。如此，從噴嘴10的噴出口對基板W噴出清洗液202。此外，與上述同樣地，被基板W與阻隔板27圍繞的密閉空間中的清洗液202的氛圍係會經由噴嘴8的噴出口朝吸引配管49引入。 On the other hand, the corresponding valve is opened by the control of the control unit 90, and the cleaning liquid 202 is supplied through the pipe 110. In this way, the cleaning liquid 202 is sprayed from the nozzle 10 to the substrate W. In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the closed space surrounded by the substrate W and the baffle plate 27 is introduced into the suction pipe 49 through the nozzle 8.

接著，在停止噴嘴8中的引吸動作後，藉由控制部90的控制將對應的閥開放，經由配管110供給藥液203。如此，從噴嘴10的噴出口對基板W噴出藥液203。 Next, after the suction operation in the nozzle 8 is stopped, the corresponding valve is opened under the control of the control unit 90 and the chemical solution 203 is supplied through the pipe 110 . In this way, the chemical solution 203 is ejected onto the substrate W from the ejection port of the nozzle 10 .

依據上述，由於在停止經由噴嘴8的藥液200等之吸引動作後開始從噴嘴10供給藥液203，因此抑制被基板W與阻隔板27圍繞的密閉空間中的藥液203的氛圍被吸引至噴嘴8內以及配管108內。因此，在噴嘴8內以及配管108內藥液200與藥液203混合之情形係被充分地抑制。 According to the above, since the supply of the chemical solution 203 from the nozzle 10 starts after the suction action of the chemical solution 200 etc. through the nozzle 8 is stopped, the atmosphere of the chemical solution 203 in the closed space surrounded by the substrate W and the baffle plate 27 is suppressed from being sucked into the nozzle 8 and the piping 108. Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 8 and the piping 108 is fully suppressed.

此外，在本實施形態的基板處理方法中，只要在停止噴嘴8中的吸引動作後開始經由噴嘴10供給藥液203，則亦可皆不進行經由噴嘴8供給清洗液201以及經由噴嘴10供給清洗液202。然而，在進行噴嘴8中的吸引動作之期間進行清洗液的供給，藉此能洗淨基板W的上表面，且進一步地於基板W的上表面形成有液膜，藉此能抑制基板W的污染。 In addition, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 10 is started after the suction action in the nozzle 8 is stopped, the supply of the cleaning solution 201 through the nozzle 8 and the supply of the cleaning solution 202 through the nozzle 10 may not be performed. However, the supply of the cleaning solution during the suction action in the nozzle 8 can clean the upper surface of the substrate W, and further form a liquid film on the upper surface of the substrate W, thereby suppressing the contamination of the substrate W.

依據上述，期望噴嘴8中的吸引動作係在進行清洗液的供給之期間結束，亦即期望噴嘴8中的吸引動作係比清洗液的供給動作還先結束。 Based on the above, it is expected that the suction operation in the nozzle 8 ends while the cleaning liquid is being supplied, that is, it is expected that the suction operation in the nozzle 8 ends before the supply operation of the cleaning liquid.

此外，亦可進行經由噴嘴8供給清洗液201以及經由噴嘴10供給清洗液202中的任一者。 In addition, either the cleaning liquid 201 may be supplied through the nozzle 8 or the cleaning liquid 202 may be supplied through the nozzle 10.

[第三實施形態] [Third implementation form]

說明本實施形態的基板處理方法以及基板處理裝置。此外，在以下的說明中，針對在與以上所記載的實施形態中所說明的構成要素同樣的構成要素附上相同的元件符號來顯示，並適當地省略詳細的說明。 The substrate processing method and substrate processing device of the present embodiment are described. In addition, in the following description, the same component symbols are attached to the components that are the same as the components described in the above-described embodiment, and the detailed description is appropriately omitted.

[針對基板處理裝置的構成] [Regarding the structure of the substrate processing device]

圖14係示意性地顯示本實施形態的處理單元UTb的構成的例子之圖。處理單元UTb中的各個構成的動作係被控制部90控制。 FIG. 14 is a diagram schematically showing an example of the configuration of the processing unit UTb of this embodiment. The operation of each configuration in the processing unit UTb is controlled by the control unit 90.

處理單元UTb係具備腔室80、自轉夾具5、供給及吸引機構14、供給及吸引機構15、供給及吸引機構16、供給及吸引機構30、供給及吸引機構38、供給及吸引機構39、惰性氣體供給源36以及罩17。 The processing unit UTb includes a chamber 80, a self-rotating fixture 5, a supply and suction mechanism 14, a supply and suction mechanism 15, a supply and suction mechanism 16, a supply and suction mechanism 30, a supply and suction mechanism 38, a supply and suction mechanism 39, an inert gas supply source 36, and a cover 17.

此外，處理單元UTb係具備對向構件26，對向構件26係與被自轉夾具5保持的基板W的上表面對向。 Furthermore, the processing unit UTb is provided with a facing member 26 facing the upper surface of the substrate W held by the rotation jig 5 .

對向構件26係具備：阻隔板27；以及旋轉軸28，係能夠與阻隔板27一體性地旋轉。於阻隔板27的下表面具有：基板對向面29，係由圓形的平坦面所構成，並與基板W的上表面全域對向。於基板對向面29的中央部形成有上下地貫通阻隔板27之圓筒狀的貫通孔132。 The opposing member 26 is provided with the baffle plate 27 and the rotation shaft 28, and is rotatable integrally with the baffle plate 27. The lower surface of the barrier plate 27 has a substrate-facing surface 29 , which is a circular flat surface and faces the entire upper surface of the substrate W. A cylindrical through hole 132 that vertically penetrates the barrier plate 27 is formed in the center of the substrate facing surface 29 .

旋轉軸28係通過阻隔板27的中心，並能夠繞著於鉛直方向延伸的旋轉軸線A2旋轉。旋轉軸28係能夠相對旋轉地被支撐臂31支撐，支撐臂31係在阻隔板27的上方水平地延伸。 The rotation axis 28 passes through the center of the baffle plate 27 and can rotate around the rotation axis A2 extending in the lead vertical direction. The rotation axis 28 is supported by the support arm 31 so as to be relatively rotatable, and the support arm 31 extends horizontally above the baffle plate 27.

於貫通孔132的內部設置有軸噴嘴32，軸噴嘴32係沿著阻隔板27的旋轉軸線A2上下地延伸。 A shaft nozzle 32 is provided inside the through hole 132 , and the shaft nozzle 32 extends vertically along the rotation axis A2 of the baffle plate 27 .

於阻隔板27結合有包含電動馬達等之旋轉機構34。旋轉機構34係使阻隔板27以及旋轉軸28相對於支撐臂31繞著旋轉軸線A2旋轉。 A rotating mechanism 34 including an electric motor or the like is coupled to the baffle plate 27 . The rotation mechanism 34 rotates the baffle plate 27 and the rotation shaft 28 relative to the support arm 31 around the rotation axis A2.

升降機構35係使阻隔板27在接近位置與退避位置之間升降，接近位置為阻隔板27的基板對向面29接近被自轉夾具5保持的基板W的上表面之位置，退避位置為設置於接近位置的上方之位置。此外，在圖14中阻隔板27係位於上述說明中的退避位置。 The lifting mechanism 35 lifts the blocking plate 27 between the approach position and the retreat position. The approach position is a position where the substrate-facing surface 29 of the blocking plate 27 approaches the upper surface of the substrate W held by the rotating clamp 5, and the retreat position is a position set above the approach position. In addition, in FIG. 14 , the blocking plate 27 is located at the retreat position described above.

在基板W的上方，噴嘴400以及噴嘴402係分別於基板W的上表面對向地配置。供給及吸引機構38係將例如鹼性的藥液以及清洗液選擇性地供給至配管401以及噴嘴400，且吸引配管401內以及噴嘴400內的該藥液以及該清洗液。供給及吸引機構39係將例如酸性的藥液以及清洗液選擇性地供給至配管403以及噴嘴402，且吸引配管403內以及噴嘴402內的該藥液以及該清洗液。噴嘴400以及噴嘴402係構成為能夠分別在與基板W的上表面對向之處理位置(對基板W噴出處理液之位置)與退避位置(從基板W的上方退避之位置)之間擺動。 Above the substrate W, the nozzle 400 and the nozzle 402 are arranged to face the upper surface of the substrate W respectively. The supply and suction mechanism 38 selectively supplies, for example, alkaline chemical solution and cleaning liquid to the pipe 401 and the nozzle 400 , and sucks the chemical liquid and the cleaning liquid in the pipe 401 and the nozzle 400 . The supply and suction mechanism 39 selectively supplies, for example, acidic chemical liquid and cleaning liquid to the pipe 403 and the nozzle 402 , and sucks the chemical liquid and the cleaning liquid in the pipe 403 and the nozzle 402 . The nozzle 400 and the nozzle 402 are configured to be swingable between a processing position facing the upper surface of the substrate W (a position where the processing liquid is sprayed onto the substrate W) and a retraction position (a position retracting from above the substrate W).

[針對供給及吸引機構] [For supply and attraction agencies]

圖15係示意性地顯示圖14的例子所示的供給及吸引機構38的構成的例子之圖。此外，供給及吸引機構39的構成係除了所供給的處理液的種類除外亦與圖15的例子所示的構成同樣。 FIG. 15 is a diagram schematically showing an example of the structure of the supply and suction mechanism 38 shown in the example of FIG. 14 . In addition, the structure of the supply and suction mechanism 39 is the same as that shown in the example of FIG. 15 except for the type of processing liquid to be supplied.

如圖15的例子所示，供給及吸引機構38係具備：連接配管44，係連接於配管401的上游側的端部；排液配管45，係進一步地連接於連接配管44；閥51，係設置於排液配管45；藥液配管46，係連接於連接配管44的上游側；閥 52，係設置於藥液配管46；清洗液配管47，係連接於連接配管44的上游側；閥53，係設置於清洗液配管47；閥50，係設置於比連接配管44還下游側的配管401；吸引配管48，係從比閥50還下游側的配管401分歧；調整閥54，係設置於吸引配管48；吸引裝置55，係進一步地連接於吸引配管48；吸引配管49，係進一步地連接於連接配管44；閥56，係設置於吸引配管49；以及吸引裝置57，係進一步地連接於吸引配管49。此外，排液配管45係連接於機外的排液設備。此外，亦可為具備吸引裝置55以及吸引裝置57中的任一者之情形。 As shown in the example of FIG. 15 , the supply and suction mechanism 38 includes a connecting pipe 44 connected to the upstream end of the pipe 401 , a drain pipe 45 further connected to the connecting pipe 44 , and a valve 51 . It is provided in the drain pipe 45; the chemical liquid pipe 46 is connected to the upstream side of the connecting pipe 44; and the valve 52 is provided in the chemical liquid pipe 46; the cleaning liquid pipe 47 is connected to the upstream side of the connecting pipe 44; the valve 53 is installed in the cleaning liquid pipe 47; and the valve 50 is installed on the downstream side of the connecting pipe 44. The piping 401; the suction piping 48 is branched from the piping 401 downstream of the valve 50; the adjustment valve 54 is provided in the suction piping 48; the suction device 55 is further connected to the suction piping 48; the suction piping 49 is further connected to the suction piping 48. The valve 56 is connected to the connecting pipe 44; the valve 56 is provided in the suction pipe 49; and the suction device 57 is further connected to the suction pipe 49. In addition, the drain pipe 45 is connected to a drain device outside the machine. In addition, any one of the suction device 55 and the suction device 57 may be provided.

當在其他的閥關閉的狀態下閥52以及閥50打開時，從藥液配管46對配管401供給藥液，並從噴嘴400的噴出口朝向下方噴出藥液。 When the valve 52 and the valve 50 are opened while the other valves are closed, the chemical solution is supplied to the pipe 401 from the chemical solution pipe 46 and the chemical solution is discharged downward from the discharge port of the nozzle 400 .

此外，當在其他的閥關閉的狀態下閥52以及閥51打開時，從藥液配管46對排液配管45供給藥液。藉此，能將藥液配管46內的藥液予以排液(廢棄)。 Furthermore, when the valve 52 and the valve 51 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the drain pipe 45 . Thereby, the chemical solution in the chemical solution pipe 46 can be drained (wasted).

此外，當在其他的閥關閉的狀態下閥53以及閥50打開時，從閥53對配管401供給清洗液，並從噴嘴400的噴出口朝向下方噴出清洗液。 When the valve 53 and the valve 50 are opened while the other valves are closed, the cleaning liquid is supplied from the valve 53 to the pipe 401 and the cleaning liquid is sprayed downward from the discharge port of the nozzle 400 .

此外，當在其他的閥關閉的狀態下閥53以及閥51打開時，從閥53對排液配管45供給清洗液。藉此，能將清洗液配管47內的清洗液予以排液(廢棄)。 Furthermore, when the valve 53 and the valve 51 are opened while the other valves are closed, the cleaning liquid is supplied from the valve 53 to the drain pipe 45 . Thereby, the cleaning liquid in the cleaning liquid pipe 47 can be drained (wasted).

當在吸引裝置55的作動狀態中調整閥54打開時，吸引裝置55的動作變成有效，吸引配管48的內部被吸引。因此，配管401、噴嘴400以及吸引配管48所含有的處理液(藥液或者清洗液)係被引入至吸引配管48。此外，由於吸引裝置55的吸引力較弱，因此吸引裝置55的吸引速度係較慢。 When the adjustment valve 54 is opened while the suction device 55 is in an operating state, the operation of the suction device 55 becomes effective, and the inside of the suction pipe 48 is suctioned. Therefore, the treatment liquid (chemical liquid or cleaning liquid) contained in the pipe 401 , the nozzle 400 and the suction pipe 48 is introduced into the suction pipe 48 . In addition, since the suction force of the suction device 55 is weak, the suction speed of the suction device 55 is slow.

此外，吸引裝置57係設定成例如常態作動狀態。此外，亦可藉由閥動作開始吸引。當在吸引裝置57的作動狀態中閥56打開時，吸引裝置57的動作係變成有效，吸引配管49的內部被吸引。因此，吸引配管49、連接配管44、 配管401以及噴嘴400所含有的處理液(藥液或者清洗液)係被引入至吸引配管49。此外，由於與吸引裝置55的情形相比吸引裝置57的吸引力較強，因此與吸引裝置55的情形相比吸引裝置57的吸引速度較快。 In addition, the suction device 57 is set to, for example, a normal operating state. In addition, suction can also be started by valve action. When the valve 56 is opened in the operating state of the suction device 57, the action of the suction device 57 becomes effective, and the inside of the suction piping 49 is sucked. Therefore, the treatment liquid (chemical solution or cleaning liquid) contained in the suction piping 49, the connecting piping 44, the piping 401 and the nozzle 400 is introduced into the suction piping 49. In addition, since the suction force of the suction device 57 is stronger than that of the suction device 55, the suction speed of the suction device 57 is faster than that of the suction device 55.

[針對基板處理裝置的動作] [Actions for substrate processing equipment]

接著，一邊參照圖16至圖19一邊說明本實施形態的基板處理裝置的動作。在此，圖16、圖17、圖18以及圖19係用以說明基板處理裝置的動作中之尤其是供給及吸引機構38以及供給及吸引機構39的動作之示意圖。 Next, the operation of the substrate processing device of this embodiment will be described with reference to Figures 16 to 19. Here, Figures 16, 17, 18, and 19 are schematic diagrams used to illustrate the operation of the substrate processing device, especially the operation of the supply and suction mechanism 38 and the supply and suction mechanism 39.

本實施形態的基板處理裝置所為之基板處理方法係具備下述步驟：對已搬運至處理單元UTb的基板W進行藥液處理；對已進行了藥液處理的基板W進行洗淨處理；對已進行了洗淨處理的基板W進行乾燥處理；以及將已進行了乾燥處理的基板W從處理單元UTb搬出。 The substrate processing method of the substrate processing device of this embodiment comprises the following steps: treating the substrate W transported to the processing unit UTb with a chemical solution; cleaning the substrate W treated with the chemical solution; drying the substrate W treated with the chemical solution; and removing the substrate W treated with the chemical solution from the processing unit UTb.

首先，如圖16的例子所示，在上述所說明的藥液處理中，藉由控制器90的控制將圖15所示的閥50以及閥52開放，經由配管401供給藥液200。如此，從噴嘴400的噴出口對基板W噴出藥液200。 First, as shown in the example of FIG. 16 , in the above-described chemical solution processing, the valve 50 and the valve 52 shown in FIG. 15 are opened under the control of the controller 90 , and the chemical solution 200 is supplied through the pipe 401 . In this way, the chemical solution 200 is ejected onto the substrate W from the ejection port of the nozzle 400 .

接著，如圖17的例子所示，藉由控制部90的控制將圖15所示的閥50以及閥53開放，經由配管401供給清洗液201。如此，從噴嘴400的噴出口對基板W噴出清洗液201。 Next, as shown in the example of FIG. 17 , the valve 50 and the valve 53 shown in FIG. 15 are opened under the control of the control unit 90 , and the cleaning liquid 201 is supplied through the pipe 401 . In this way, the cleaning liquid 201 is sprayed onto the substrate W from the discharge port of the nozzle 400 .

接著，如圖18的例子所示，停止噴出清洗液201且藉由控制部90的控制將圖15所示的閥50以及閥56開放，將吸引配管49、連接配管44、配管401以及噴嘴400所含有的藥液或者清洗液朝吸引配管49引入。此時，腔室80內的藥液200以及清洗液201的氛圍亦會經由噴嘴400的噴出口朝吸引配管49引入。此 外，亦可一併開放調整閥54，藉此將配管401以及噴嘴400所含有的藥液200或者清洗液201朝吸引配管48引入。 Next, as shown in the example of FIG. 18 , the spraying of the cleaning fluid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 15 are opened under the control of the control unit 90 , and the suction pipe 49 , the connecting pipe 44 , the pipe 401 and the nozzle 400 are connected. The contained chemical liquid or cleaning liquid is introduced into the suction pipe 49 . At this time, the atmosphere of the chemical solution 200 and the cleaning solution 201 in the chamber 80 will also be introduced toward the suction pipe 49 through the discharge port of the nozzle 400 . this Alternatively, the adjustment valve 54 may be opened simultaneously to introduce the chemical solution 200 or cleaning fluid 201 contained in the pipe 401 and the nozzle 400 into the suction pipe 48 .

另一方面，如圖18的例子所示，藉由控制部90的控制將對應的閥開放，經由配管403供給清洗液202。如此，從噴嘴402的噴出口對基板W噴出清洗液202。此外，與上述同樣地，腔室80內的清洗液202的氛圍係會經由噴嘴400的噴出口朝吸引配管49引入。 On the other hand, as shown in the example of FIG. 18 , the corresponding valve is opened by the control of the control unit 90, and the cleaning liquid 202 is supplied through the pipe 403. In this way, the cleaning liquid 202 is sprayed from the nozzle 402 to the substrate W. In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the chamber 80 is introduced into the suction pipe 49 through the nozzle 400.

接著，如圖19的例子所示，在停止噴嘴400中的引吸動作後，藉由控制部90的控制將對應的閥開放，經由噴嘴402供給藥液203。如此，從噴嘴402的噴出口對基板W噴出藥液203。 Next, as shown in the example of FIG. 19 , after the suction action in the nozzle 400 is stopped, the corresponding valve is opened by the control of the control unit 90, and the chemical solution 203 is supplied through the nozzle 402. In this way, the chemical solution 203 is sprayed from the nozzle outlet of the nozzle 402 to the substrate W.

在此，在本實施形態的基板處理方法中，只要在停止噴嘴400中的吸引動作後開始經由噴嘴402供給藥液203，則亦可皆不進行經由噴嘴400供給清洗液201以及經由噴嘴402供給清洗液202。然而，藉由在進行噴嘴400中的吸引動作之期間進行上述清洗液的供給，除了能洗淨基板W的上表面之外還能藉由於基板W的上表面形成液膜來抑制基板W的污染。 Here, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 402 is started after the suction action in the nozzle 400 is stopped, the supply of the cleaning solution 201 through the nozzle 400 and the supply of the cleaning solution 202 through the nozzle 402 may not be performed. However, by supplying the above-mentioned cleaning solution during the suction action in the nozzle 400, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film on the upper surface of the substrate W.

此外，亦可進行經由噴嘴400供給清洗液201以及經由噴嘴402供給清洗液202中的任一者。 In addition, either the cleaning liquid 201 is supplied through the nozzle 400 or the cleaning liquid 202 is supplied through the nozzle 402.

依據上述，由於在停止經由噴嘴400的藥液200等之吸引動作後開始從噴嘴402供給藥液203，因此抑制腔室80內的藥液203的氛圍被吸引至噴嘴400內以及配管401內。因此，在噴嘴400內以及配管401內藥液200與藥液203混合之情形係被充分地抑制。 According to the above, since the supply of the chemical solution 203 from the nozzle 402 is started after the suction operation of the chemical solution 200 etc. through the nozzle 400 is stopped, the atmosphere of the chemical solution 203 in the chamber 80 is suppressed from being sucked into the nozzle 400 and the pipe 401 . Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 400 and the pipe 401 is sufficiently suppressed.

[第四實施形態] [Fourth implementation form]

說明本實施形態的基板處理方法以及基板處理裝置。此外，在以下的說明中，針對在與以上所記載的實施形態中所說明的構成要素同樣的構成要素附上相同的元件符號來顯示，並適當地省略詳細的說明。 The substrate processing method and substrate processing apparatus according to this embodiment will be described. In addition, in the following description, the same reference numerals are attached to the same components as those described in the embodiments described above, and detailed descriptions are appropriately omitted.

[針對基板處理裝置的構成] [Configuration of substrate processing equipment]

圖20係示意性地顯示本實施形態的處理單元UTc的構成的例子之圖。處理單元UTc中的各個構成的動作係被控制部90控制。 FIG. 20 is a diagram schematically showing an example of the configuration of the processing unit UTc of this embodiment. The operation of each configuration in the processing unit UTc is controlled by the control unit 90.

處理單元UTc係具備：腔室80；自轉夾具5；配管320，係連接有噴嘴310，噴嘴310係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管322，係連接有噴嘴312，噴嘴312係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管324，係連接有噴嘴314，噴嘴314係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；配管326，係連接有噴嘴316，噴嘴316係用以朝向被自轉夾具5保持的基板W的上表面的中央部噴出處理液；供給及吸引機構330，係用以將例如鹼性的藥液以及清洗液選擇性地供給至配管320，且吸引噴嘴310內以及配管320內的該藥液以及該清洗液；供給及吸引機構332，係用以將例如酸性的藥液以及清洗液選擇性地供給至配管322，且吸引噴嘴312內以及配管322內的該藥液以及該清洗液；供給及吸引機構334，係將例如異丙醇(IPA)等有機溶劑供給至配管324，且吸引噴嘴314內以及配管324內的該有機溶劑；供給及吸引機構336，係將例如其他的藥液供給至配管326，且吸引噴嘴316內以及配管326內的該有機溶劑；支撐部302，係一體性地支撐噴嘴310、噴嘴312、噴嘴314以及噴嘴316；噴嘴臂300，係於端部安裝有支撐部302；以及罩17。 The processing unit UTc is provided with: a chamber 80; a rotation jig 5; a pipe 320 connected to a nozzle 310 for ejecting the processing liquid toward the center of the upper surface of the substrate W held by the rotation jig 5; and a pipe 322. A nozzle 312 is connected to the nozzle 312 for ejecting the processing liquid toward the center of the upper surface of the substrate W held by the rotating fixture 5; a pipe 324 is connected to a nozzle 314 for being held toward the rotating fixture 5 The processing liquid is ejected from the center of the upper surface of the substrate W; the pipe 326 is connected to a nozzle 316, and the nozzle 316 is used to eject the processing liquid toward the center of the upper surface of the substrate W held by the rotation clamp 5; supply and suction mechanism 330 is used to selectively supply alkaline chemical liquid and cleaning liquid to the pipe 320 and suck the chemical liquid and the cleaning liquid in the nozzle 310 and the pipe 320; the supply and suction mechanism 332 is used to For example, acidic chemical liquid and cleaning liquid are selectively supplied to the pipe 322, and the chemical liquid and the cleaning liquid in the nozzle 312 and the pipe 322 are sucked; the supply and suction mechanism 334 is, for example, isopropyl alcohol (IPA). The organic solvent is supplied to the pipe 324, and the organic solvent in the nozzle 314 and the pipe 324 is sucked; the supply and suction mechanism 336 supplies, for example, other chemical liquid to the pipe 326, and sucks the organic solvent in the nozzle 316 and the pipe 326. The organic solvent; the support portion 302 integrally supports the nozzle 310, the nozzle 312, the nozzle 314 and the nozzle 316; the nozzle arm 300 has the support portion 302 installed at the end; and the cover 17.

噴嘴臂300係具備臂部300A、軸體300B以及致動器(actuator)300C。致動器300C係調整軸體300B繞著軸的角度。臂部300A的一方的端部係被固定於軸體300B，臂部300A的另一方的端部係配置成遠離軸體300B的軸。此外，於臂部300A的另一方的端部安裝有支撐部302。如此，支撐部302係能夠在處理位置(對基板W噴出處理液之位置)與退避位置(從基板W的上方退避之位置)之間於基板W的半徑方向擺動。此外，擺動所致使的支撐部302的移動方向只要具有基板W的半徑方向的成分即可，無須嚴格地與基板W的半徑方向平行。在此，噴嘴臂300亦可藉由未圖示的馬達等而能夠於鉛直方向升降。在此情形中，能夠藉由噴嘴臂300的升降來調整安裝於噴嘴臂300的端部的支撐部302與基板W的上表面之間的距離。 The nozzle arm 300 includes an arm 300A, a shaft 300B, and an actuator 300C. The actuator 300C adjusts the angle of the shaft 300B around the axis. One end of the arm 300A is fixed to the shaft 300B, and the other end of the arm 300A is arranged to be away from the axis of the shaft 300B. In addition, a support portion 302 is installed at the other end of the arm 300A. In this way, the support portion 302 can be swung in the radial direction of the substrate W between a processing position (a position for spraying a processing liquid onto the substrate W) and a retreat position (a position retreated from above the substrate W). In addition, the movement direction of the support part 302 caused by the swing only needs to have a component in the radial direction of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W. Here, the nozzle arm 300 can also be raised and lowered in the vertical direction by a motor not shown. In this case, the distance between the support part 302 installed at the end of the nozzle arm 300 and the upper surface of the substrate W can be adjusted by raising and lowering the nozzle arm 300.

於基板W的上方，被支撐部302一體性地支撐的噴嘴310、噴嘴312、噴嘴314以及噴嘴316係分別與基板W的上表面對向地配置。供給及吸引機構330係將例如鹼性的藥液以及清洗液選擇性地供給至配管320以及噴嘴310，且吸引配管320內以及噴嘴310內的該藥液以及該清洗液。供給及吸引機構332係將例如酸性的藥液以及清洗液選擇性地供給至配管322以及噴嘴312，且吸引配管322內以及噴嘴312內的該藥液以及該清洗液。 Above the substrate W, the nozzles 310, 312, 314, and 316 integrally supported by the support portion 302 are respectively arranged opposite to the upper surface of the substrate W. The supply and suction mechanism 330 selectively supplies, for example, alkaline chemical liquid and cleaning liquid to the piping 320 and the nozzle 310, and suctions the chemical liquid and the cleaning liquid in the piping 320 and the nozzle 310. The supply and suction mechanism 332 selectively supplies, for example, acidic chemical liquid and cleaning liquid to the piping 322 and the nozzle 312, and suctions the chemical liquid and the cleaning liquid in the piping 322 and the nozzle 312.

[針對供給及吸引機構] [For supply and attraction agencies]

圖21係示意性地顯示圖20的例子所示的供給及吸引機構330的構成的例子之圖。此外，供給及吸引機構332、供給及吸引機構334、供給及吸引機構336的構成係除了所供給的處理液的種類除外亦與圖21的例子所示的構成同樣。 FIG. 21 schematically shows an example of the configuration of the supply and suction mechanism 330 shown in the example of FIG. 20 . In addition, the configurations of the supply and suction mechanism 332, the supply and suction mechanism 334, and the supply and suction mechanism 336 are the same as those shown in the example of FIG. 21 except for the type of the treatment liquid supplied.

如圖21的例子所示，供給及吸引機構330係具備：連接配管44，係連接於配管320的上游側的端部；排液配管45，係進一步地連接於連接配管 44；閥51，係設置於排液配管45；藥液配管46，係連接於連接配管44的上游側；閥52，係設置於藥液配管46；清洗液配管47，係連接於連接配管44的上游側；閥53，係設置於清洗液配管47；閥50，係設置於比連接配管44還下游側的配管320；吸引配管48，係從比閥50還下游側的配管320分歧；調整閥54，係設置於吸引配管48；吸引裝置55，係進一步地連接於吸引配管48；吸引配管49，係進一步地連接於連接配管44；閥56，係設置於吸引配管49；以及吸引裝置57，係進一步地連接於吸引配管49。此外，排液配管45係連接於機外的排液設備。此外，亦可為具備吸引裝置55以及吸引裝置57中的任一者之情形。 As shown in the example of FIG. 21 , the supply and suction mechanism 330 includes a connecting pipe 44 connected to the upstream end of the pipe 320 and a drain pipe 45 further connected to the connecting pipe. 44; The valve 51 is provided in the drain pipe 45; the chemical liquid pipe 46 is connected to the upstream side of the connecting pipe 44; the valve 52 is provided in the chemical liquid pipe 46; the cleaning liquid pipe 47 is connected to the connecting pipe 44 the upstream side of The valve 54 is provided in the suction pipe 48; the suction device 55 is further connected to the suction pipe 48; the suction pipe 49 is further connected to the connecting pipe 44; the valve 56 is provided in the suction pipe 49; and the suction device 57 , is further connected to the suction pipe 49. In addition, the drain pipe 45 is connected to a drain device outside the machine. In addition, any one of the suction device 55 and the suction device 57 may be provided.

當在其他的閥關閉的狀態下閥52以及閥50打開時，從藥液配管46對配管320供給藥液，並從噴嘴310的噴出口朝向下方噴出藥液。 When the valve 52 and the valve 50 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the pipe 320 and the chemical solution is discharged downward from the discharge port of the nozzle 310 .

此外，當在其他的閥關閉的狀態下閥52以及閥51打開時，從藥液配管46對排液配管45供給藥液。藉此，能將藥液配管46內的藥液予以排液(廢棄)。 Furthermore, when the valve 52 and the valve 51 are opened while the other valves are closed, the chemical solution is supplied from the chemical solution pipe 46 to the drain pipe 45 . Thereby, the chemical solution in the chemical solution pipe 46 can be drained (wasted).

此外，當在其他的閥關閉的狀態下閥53以及閥50打開時，從閥53對配管320供給清洗液，並從噴嘴310的噴出口朝向下方噴出清洗液。 Furthermore, when valve 53 and valve 50 are opened while the other valves are closed, cleaning liquid is supplied from valve 53 to pipe 320, and the cleaning liquid is sprayed downward from the spray port of nozzle 310.

此外，當在其他的閥關閉的狀態下閥53以及閥51打開時，從閥53對排液配管45供給清洗液。藉此，能將清洗液配管47內的清洗液予以排液(廢棄)。 Furthermore, when valve 53 and valve 51 are opened while the other valves are closed, cleaning fluid is supplied from valve 53 to the drain pipe 45. In this way, the cleaning fluid in the cleaning fluid pipe 47 can be drained (discarded).

當在吸引裝置55的作動狀態中調整閥54打開時，吸引裝置55的動作變成有效，吸引配管48的內部被吸引。因此，配管320、噴嘴310以及吸引配管48所含有的處理液(藥液或者清洗液)係被引入至吸引配管48。此外，由於吸引裝置55的吸引力較弱，因此吸引裝置55的吸引速度係較慢。 When the adjustment valve 54 is opened in the operating state of the suction device 55, the action of the suction device 55 becomes effective, and the inside of the suction pipe 48 is sucked. Therefore, the treatment liquid (chemical solution or cleaning liquid) contained in the pipe 320, the nozzle 310 and the suction pipe 48 is introduced into the suction pipe 48. In addition, since the suction force of the suction device 55 is weak, the suction speed of the suction device 55 is slow.

此外，吸引裝置57係設定成例如常態作動狀態。此外，亦可藉由閥動作開始吸引。當在吸引裝置57的作動狀態中閥56打開時，吸引裝置57的動 作係變成有效，吸引配管49的內部被吸引。因此，吸引配管49、連接配管44、配管320以及噴嘴310所含有的處理液(藥液或者清洗液)係被引入至吸引配管49。此外，由於與吸引裝置55的情形相比吸引裝置57的吸引力較強，因此與吸引裝置55的情形相比吸引裝置57的吸引速度較快。 In addition, the suction device 57 is set to a normal operation state, for example. In addition, suction can also be started by valve action. When the valve 56 is opened in the actuated state of the suction device 57, the suction device 57 moves The operation system becomes effective, and the inside of the suction pipe 49 is sucked. Therefore, the treatment liquid (chemical liquid or cleaning liquid) contained in the suction pipe 49 , the connecting pipe 44 , the pipe 320 and the nozzle 310 is introduced into the suction pipe 49 . In addition, since the suction force of the suction device 57 is stronger than that of the suction device 55 , the suction speed of the suction device 57 is faster than that of the suction device 55 .

[針對基板處理裝置的動作] [Actions for substrate processing equipment]

接著，一邊參照圖22至圖25一邊說明本實施形態的基板處理裝置的動作。在此，圖22、圖23、圖24以及圖25係用以說明基板處理裝置的動作中之尤其是從噴嘴310以及噴嘴312供給處理液的動作之示意圖。 Next, the operation of the substrate processing apparatus of this embodiment will be described with reference to FIGS. 22 to 25 . Here, FIG. 22 , FIG. 23 , FIG. 24 and FIG. 25 are schematic diagrams for explaining the operation of the substrate processing apparatus, especially the operation of supplying the processing liquid from the nozzle 310 and the nozzle 312 .

本實施形態的基板處理裝置所為之基板處理方法係具備下述步驟：對已搬運至處理單元UTc的基板W進行藥液處理；對已進行了藥液處理的基板W進行洗淨處理；對已進行了洗淨處理的基板W進行乾燥處理；以及將已進行了乾燥處理的基板W從處理單元UTc搬出。 The substrate processing method of the substrate processing apparatus of this embodiment includes the following steps: performing chemical liquid treatment on the substrate W that has been transported to the processing unit UTc; performing a cleaning process on the substrate W that has been subjected to chemical liquid treatment; The cleaned substrate W is dried; and the dried substrate W is unloaded from the processing unit UTc.

首先，如圖22的例子所示，在上述所說明的藥液處理中，藉由控制器90的控制將圖21所示的閥50以及閥52開放，經由配管320供給藥液200。如此，從噴嘴310的噴出口對基板W噴出藥液200。 First, as shown in the example of FIG. 22 , in the above-described chemical solution processing, the valve 50 and the valve 52 shown in FIG. 21 are opened under the control of the controller 90 , and the chemical solution 200 is supplied through the pipe 320 . In this way, the chemical solution 200 is ejected onto the substrate W from the ejection port of the nozzle 310 .

接著，如圖23的例子所示，藉由控制部90的控制將圖21所示的閥50以及閥53開放，經由配管320供給清洗液201。如此，從噴嘴310的噴出口對基板W噴出清洗液201。 Next, as shown in the example of FIG. 23 , the valve 50 and the valve 53 shown in FIG. 21 are opened by the control of the control unit 90, and the cleaning liquid 201 is supplied through the pipe 320. In this way, the cleaning liquid 201 is sprayed from the nozzle 310 to the substrate W.

接著，如圖24的例子所示，停止噴出清洗液201且藉由控制部90的控制將圖21所示的閥50以及閥56開放，將吸引配管49、連接配管44、配管320以及噴嘴310所含有的藥液或者清洗液朝吸引配管49引入。此時，腔室80內的藥液200以及清洗液201的氛圍亦會經由噴嘴310的噴出口朝吸引配管49引入。此 外，亦可一併開放調整閥54，藉此將配管320以及噴嘴310所含有的藥液200或者清洗液201朝吸引配管48引入。 Next, as shown in the example of FIG. 24 , the spraying of the cleaning fluid 201 is stopped, and the valve 50 and the valve 56 shown in FIG. 21 are opened under the control of the control unit 90 , and the suction pipe 49 , the connecting pipe 44 , the pipe 320 and the nozzle 310 are connected. The contained chemical liquid or cleaning liquid is introduced into the suction pipe 49 . At this time, the atmosphere of the chemical solution 200 and the cleaning solution 201 in the chamber 80 will also be introduced toward the suction pipe 49 through the discharge port of the nozzle 310 . this Alternatively, the adjustment valve 54 may be opened simultaneously to introduce the chemical solution 200 or the cleaning fluid 201 contained in the pipe 320 and the nozzle 310 into the suction pipe 48 .

另一方面，如圖24的例子所示，藉由控制部90的控制將對應的閥開放，經由配管322供給清洗液202。如此，從噴嘴312的噴出口對基板W噴出清洗液202。此外，與上述同樣地，腔室80內的清洗液202的氛圍係會經由噴嘴310的噴出口朝吸引配管49引入。 On the other hand, as shown in the example of FIG. 24 , the corresponding valve is opened under the control of the control unit 90 and the cleaning liquid 202 is supplied through the pipe 322 . In this way, the cleaning liquid 202 is sprayed onto the substrate W from the discharge port of the nozzle 312 . In addition, similarly to the above, the atmosphere of the cleaning liquid 202 in the chamber 80 is introduced into the suction pipe 49 through the discharge port of the nozzle 310 .

接著，如圖25的例子所示，在停止噴嘴310中的引吸動作後，藉由控制部90的控制將對應的閥開放，經由噴嘴312供給藥液203。如此，從噴嘴312的噴出口對基板W噴出藥液203。 Next, as shown in the example of FIG. 25 , after the suction operation in the nozzle 310 is stopped, the corresponding valve is opened under the control of the control unit 90 , and the chemical solution 203 is supplied through the nozzle 312 . In this way, the chemical solution 203 is ejected onto the substrate W from the ejection port of the nozzle 312 .

在此，在本實施形態的基板處理方法中，只要在停止噴嘴310中的吸引動作後開始經由噴嘴312供給藥液203，則亦可皆不進行經由噴嘴310供給清洗液201以及經由噴嘴312供給清洗液202。然而，藉由在進行噴嘴310中的吸引動作之期間進行上述清洗液的供給，除了能洗淨基板W的上表面之外還能藉由於基板W的上表面形成液膜來抑制基板W的污染。 Here, in the substrate processing method of this embodiment, as long as the supply of the chemical solution 203 through the nozzle 312 is started after the suction action in the nozzle 310 is stopped, the supply of the cleaning solution 201 through the nozzle 310 and the supply of the cleaning solution 202 through the nozzle 312 may not be performed. However, by supplying the above-mentioned cleaning solution during the suction action in the nozzle 310, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film on the upper surface of the substrate W.

此外，亦可進行經由噴嘴310供給清洗液201以及經由噴嘴312供給清洗液202中的任一者。 In addition, either the cleaning liquid 201 may be supplied through the nozzle 310 or the cleaning liquid 202 may be supplied through the nozzle 312.

依據上述，由於在停止經由噴嘴310的藥液200等之吸引動作後開始從位於噴嘴310附近的噴嘴312供給藥液203，因此抑制腔室80內的藥液203的氛圍被吸引至噴嘴310內以及配管320內。因此，在噴嘴310內以及配管320內藥液200與藥液203混合之情形係被充分地抑制。 According to the above, since the supply of the chemical solution 203 from the nozzle 312 located near the nozzle 310 is stopped after the suction operation of the chemical solution 200 etc. through the nozzle 310 is stopped, the atmosphere of the chemical solution 203 in the chamber 80 is suppressed from being sucked into the nozzle 310 And inside the piping 320. Therefore, the mixing of the chemical solution 200 and the chemical solution 203 in the nozzle 310 and the pipe 320 is sufficiently suppressed.

[針對藉由以上所記載的實施形態所產生的功效] [Regarding the effects produced by the implementation form described above]

接著，顯示藉由以上所說明的實施形態所產生的功效的例子。此外，在以下的說明中，雖然依據以上所說明的實施形態的例子所示的具體性的構成記載了該功效，然而亦可在產生同樣的功效的範圍內與本發明說明書的例子所示的其他的具體性的構成置換。 Next, examples of effects produced by the above-described embodiment will be shown. In addition, in the following description, although the effect is described based on the specific configuration shown in the example of the embodiment described above, the same effect as shown in the example of the present invention can also be achieved within the scope of producing the same effect. Other concrete constitutive substitutions.

此外，該置換亦可跨越複數個實施形態。亦即，亦可有組合在不同的實施形態中的例子所示的各個構成來產生同樣的功效之情形。 In addition, the replacement may also span multiple implementation forms. That is, it is also possible to combine the various structures shown in the examples in different implementation forms to produce the same effect.

依據以上所記載的實施形態，在基板處理方法中從第一噴嘴對基板W噴出第一藥液。在此，第一噴嘴係與例如噴嘴8、噴嘴310以及噴嘴400等中的任一者對應(以下為了方便說明，會有使這些噴嘴中的其中一個噴嘴對應地記載之情形)。此外，第一藥液係例如與藥液200等對應。而且，在噴出藥液200後，吸引噴嘴8內的液體(例如藥液200或者清洗液201等)。而且，在停止吸引噴嘴8內的液體後，從第二噴嘴對基板W噴出與藥液200不同的第二藥液。在此，第二噴嘴係與例如噴嘴10、噴嘴312以及噴嘴402等中的任一者對應(以下為了方便說明，會有使這些噴嘴中的其中一個噴嘴對應地記載之情形)。此外，第二藥液係例如與藥液203等對應。 According to the above-described embodiment, in the substrate processing method, the first chemical liquid is ejected from the first nozzle to the substrate W. Here, the first nozzle corresponds to, for example, any one of the nozzle 8, the nozzle 310, and the nozzle 400 (hereinafter, for convenience of explanation, one of these nozzles may be described in a corresponding manner). In addition, the first chemical solution corresponds to, for example, the medical solution 200 or the like. Then, after the chemical solution 200 is ejected, the liquid in the nozzle 8 (for example, the chemical solution 200 or the cleaning liquid 201, etc.) is sucked. Then, after the suction of the liquid in the nozzle 8 is stopped, a second chemical solution different from the chemical solution 200 is ejected from the second nozzle to the substrate W. Here, the second nozzle corresponds to, for example, any one of the nozzle 10, the nozzle 312, and the nozzle 402 (hereinafter, for convenience of explanation, one of these nozzles may be described in a corresponding manner). In addition, the second chemical solution corresponds to the chemical solution 203 and the like, for example.

依據此種構成，停止經由噴嘴8吸引藥液200等的吸引動作後，開始從噴嘴10供給藥液203。因此，抑制藥液203的氛圍被吸引至噴嘴8內。因此，在噴嘴8內藥液200與藥液203混合之情形被充分地抑制。結果，變成無須下述情形：為了避免複數個噴嘴間所噴出的藥液彼此的混合接觸等，預先將噴嘴彼此分離地配置。亦即，噴嘴配置的自由度提升。 According to this configuration, after the suction operation of sucking the chemical solution 200 etc. through the nozzle 8 is stopped, the supply of the chemical solution 203 from the nozzle 10 is started. Therefore, the atmosphere that suppresses the chemical solution 203 is attracted into the nozzle 8 . Therefore, the mixing of the chemical liquid 200 and the chemical liquid 203 in the nozzle 8 is sufficiently suppressed. As a result, it is no longer necessary to arrange the nozzles separately from each other in order to avoid mixing and contact of the chemical liquids ejected between the plurality of nozzles. In other words, the degree of freedom in nozzle arrangement increases.

此外，在於上述構成適當地追加了本發明說明書的例子所示的其他的構成之情形中，亦即在適當地追加了上述構成所未言及的本發明說明書中的其他的構成之情形中，亦能產生同樣的功效。 In addition, when the above-mentioned configuration is appropriately added with other configurations shown in the examples of the present invention description, that is, when other configurations in the present invention specification that are not described in the above-mentioned configurations are appropriately added, it is also possible. can produce the same effect.

此外，在沒有特別限制的情形中，進行各種處理之順序係能變更。 In addition, the order in which various processes are performed can be changed without particular limitation.

此外，依據以上所記載的實施形態，在基板處理方法中，在噴出藥液200後且在噴出藥液203前，對基板W噴出清洗液201或者清洗液202。依據此種構成，藉由在進行噴嘴8中的吸引動作之期間進行清洗液201或者清洗液202的供給，除了能洗淨基板W的上表面之外還能藉由於基板W的上表面形成清洗液的液膜來抑制基板W的污染。 Furthermore, according to the embodiment described above, in the substrate processing method, the cleaning liquid 201 or the cleaning liquid 202 is sprayed onto the substrate W after the chemical liquid 200 is sprayed and before the chemical liquid 203 is sprayed. According to this structure, by supplying the cleaning liquid 201 or the cleaning liquid 202 while the suction operation of the nozzle 8 is being performed, in addition to cleaning the upper surface of the substrate W, the upper surface of the substrate W can also be cleaned. The liquid film of the liquid is used to suppress contamination of the substrate W.

此外，依據以上所記載的實施形態，用以吸引噴嘴8內的液體之步驟係比用以噴出清洗液201或者清洗液202之步驟還先結束。依據此種構成，能在於基板W的上表面形成有清洗液的液膜之期間使用以吸引噴嘴8內的液體之步驟結束。因此，能抑制基板W的污染。 In addition, according to the above-described implementation form, the step for sucking the liquid in the nozzle 8 is completed before the step for ejecting the cleaning liquid 201 or the cleaning liquid 202. According to this structure, the step for sucking the liquid in the nozzle 8 can be completed during the period when a liquid film of the cleaning liquid is formed on the upper surface of the substrate W. Therefore, the contamination of the substrate W can be suppressed.

此外，依據以上所記載的實施形態，在用以吸引噴嘴8內的液體之步驟之前，從噴嘴8噴出清洗液201。依據此種構成，由於能在進行了基板W的上表面以及噴嘴8內的洗淨後吸引殘存的藥液200，因此能使殘存的藥液200的量減少。 In addition, according to the embodiment described above, the cleaning liquid 201 is sprayed from the nozzle 8 before the step of sucking the liquid in the nozzle 8 . According to this configuration, the remaining chemical solution 200 can be sucked out after cleaning the upper surface of the substrate W and the inside of the nozzle 8, so that the amount of the remaining chemical solution 200 can be reduced.

此外，依據以上所記載的實施形態，在用以吸引噴嘴8內的液體之步驟的期間，從噴嘴10噴出清洗液202。依據此種構成，藉由在進行噴嘴8中的吸引動作的期間進行經由噴嘴10供給清洗液202，除了能洗淨基板W的上表面之外還能藉由於基板W的上表面形成清洗液的液膜來抑制基板W的污染。 Furthermore, according to the above-described embodiment, during the step of sucking the liquid in the nozzle 8, the cleaning liquid 202 is ejected from the nozzle 10. According to this configuration, by supplying the cleaning liquid 202 through the nozzle 10 during the suction operation in the nozzle 8, in addition to cleaning the upper surface of the substrate W, the contamination of the substrate W can be suppressed by forming a liquid film of the cleaning liquid on the upper surface of the substrate W.

此外，依據以上所記載的實施形態，用以噴出清洗液之步驟係在噴嘴8以及噴嘴10雙方中以時間順序依序進行。依據此種構成，由於能在噴嘴8中的吸引動作之前以及吸引動作的期間噴出清洗液，因此能使殘存的藥液200的量減少並能洗淨基板W的上表面，且進一步地於基板W的上表面形成有清洗液的液膜，藉此能抑制基板W的污染。 In addition, according to the above-described embodiment, the steps for ejecting the cleaning liquid are performed in both the nozzle 8 and the nozzle 10 in chronological order. According to this structure, since the cleaning liquid can be ejected before and during the suction operation in the nozzle 8, the amount of the remaining chemical solution 200 can be reduced, the upper surface of the substrate W can be cleaned, and further the upper surface of the substrate W can be cleaned. A liquid film of cleaning liquid is formed on the upper surface of W, whereby contamination of the substrate W can be suppressed.

此外，依據以上所記載的實施形態，藥液200以及藥液203的一方為酸性的液體且另一方為鹼性的液體。依據此種構成，能抑制禁止混合接觸的藥液間的混合(混合接觸)。 In addition, according to the embodiment described above, one of the chemical solution 200 and the chemical solution 203 is an acidic liquid and the other is an alkaline liquid. According to this structure, mixing (mixing contact) between chemical liquids for which mixing contact is prohibited can be suppressed.

此外，依據以上所記載的實施形態，清洗液201或者清洗液202為水(DIW)。依據此種構成，能有效地洗淨噴嘴內以及基板W的上表面。 In addition, according to the above-described implementation form, the cleaning liquid 201 or the cleaning liquid 202 is water (DIW). According to this structure, the inside of the nozzle and the upper surface of the substrate W can be effectively cleaned.

此外，依據以上所記載的實施形態，噴嘴8以及噴嘴10係共通地設置於與基板W對向地配置之阻隔板27(或者阻隔板27A)的中央部。依據此種構成，雖然變得容易經由噴嘴8的噴出口吸引基板W與阻隔板27(或者阻隔板27A)之間的(密閉)空間中的藥液200的氛圍且進一步地吸引藥液203的氛圍，然而由於在停止經由噴嘴8吸引藥液200等之吸引動作後開始從噴嘴10供給藥液203，因此抑制藥液203的氛圍被吸引至噴嘴8內。 In addition, according to the above-described embodiment, the nozzle 8 and the nozzle 10 are commonly disposed at the center of the baffle plate 27 (or baffle plate 27A) disposed opposite to the substrate W. According to this configuration, although it becomes easy to attract the atmosphere of the chemical solution 200 in the (closed) space between the substrate W and the baffle plate 27 (or baffle plate 27A) through the nozzle outlet of the nozzle 8 and further attract the atmosphere of the chemical solution 203, since the chemical solution 203 is supplied from the nozzle 10 after the suction action of the chemical solution 200 through the nozzle 8 is stopped, the atmosphere of the chemical solution 203 is suppressed from being attracted into the nozzle 8.

此外，依據以上所記載的實施形態，噴嘴8以及噴嘴10(或者噴嘴310以及噴嘴312)係彼此配置於附近。依據此種構成，雖然變得容易經由噴嘴8的噴出口吸引藥液200的氛圍且進一步地吸引從位於附近的噴嘴10噴出的藥液203的氛圍，然而由於在停止經由噴嘴8吸引藥液200等之吸引動作後開始從噴嘴10供給藥液203，因此抑制藥液203的氛圍被吸引至噴嘴8內。 In addition, according to the embodiment described above, the nozzle 8 and the nozzle 10 (or the nozzle 310 and the nozzle 312) are arranged near each other. According to this configuration, it becomes easier to suck the atmosphere of the chemical solution 200 through the discharge port of the nozzle 8 and further suck the atmosphere of the chemical solution 203 ejected from the nearby nozzle 10. However, since the suction of the chemical solution 200 through the nozzle 8 is stopped, After the suction operation, the supply of the chemical solution 203 from the nozzle 10 is started. Therefore, the atmosphere that suppresses the chemical solution 203 from being sucked into the nozzle 8 is suppressed.

此外，依據以上所記載的實施形態，在基板處理裝置中具備噴嘴8、供給及吸引機構14以及噴嘴10。噴嘴8係對基板W噴出藥液200。供給及吸引機構14係在噴出藥液200後吸引噴嘴8內的液體。噴嘴10係在停止吸引噴嘴8內的液體後，對基板W噴出與藥液200不同的藥液203。 In addition, according to the above-described implementation form, the substrate processing device is provided with a nozzle 8, a supply and suction mechanism 14, and a nozzle 10. The nozzle 8 sprays the chemical solution 200 onto the substrate W. The supply and suction mechanism 14 sucks the liquid in the nozzle 8 after spraying the chemical solution 200. The nozzle 10 sprays a chemical solution 203 different from the chemical solution 200 onto the substrate W after stopping suction of the liquid in the nozzle 8.

依據此種構成，停止經由噴嘴8吸引藥液200等的吸引動作後，開始從噴嘴10供給藥液203。因此，抑制藥液203的氛圍被吸引至噴嘴8內。因此，在噴嘴8內藥液200與藥液203混合之情形被充分地抑制。結果，變成無須下述情形：為了避免複數個噴嘴間所噴出的藥液彼此的混合接觸等，預先將噴嘴彼此分離地配置。亦即，噴嘴配置的自由度提升。 According to this structure, after the suction action of the drug solution 200 through the nozzle 8 is stopped, the drug solution 203 is supplied from the nozzle 10. Therefore, the atmosphere of the drug solution 203 is suppressed from being sucked into the nozzle 8. Therefore, the mixing of the drug solution 200 and the drug solution 203 in the nozzle 8 is fully suppressed. As a result, it is no longer necessary to separate the nozzles from each other in advance to avoid mixing and contacting of the drug solutions sprayed from multiple nozzles. That is, the freedom of nozzle configuration is improved.

此外，在於上述構成適當地追加了本發明說明書的例子所示的其他的構成之情形中，亦即在適當地追加了上述構成所未言及的本發明說明書中的其他的構成之情形中，亦能產生同樣的功效。 In addition, when the above-mentioned configuration is appropriately added with other configurations shown in the examples of the present invention description, that is, when other configurations in the present invention specification that are not described in the above-mentioned configurations are appropriately added, it is also possible. can produce the same effect.

[針對以上所記載的實施形態的變化例] [Examples of changes to the implementation forms described above]

雖然在以上所記載的實施形態中亦會有針對各個構成要素的尺寸、形狀、相對性的配置關係或者實施的條件等記載之情形，然而這些所有的實施形態僅為一個例子，並非是限定性的事項。 Although the above-described embodiments may describe the size, shape, relative arrangement relationship, or implementation conditions of each component, all of these embodiments are merely examples and are not limiting. matters.

因此，在本發明說明書所揭示的技術的範圍內假想未顯示例子的無數個變化例以及均等物。例如包含下述情形：在將至少一個構成要素變化之情形；追加或者省略至少一個構成要素之情形；抽出至少一個實施形態中的至少一個構成要素並與其他的實施形態中的構成要素組合之情形。 Therefore, numerous variations and equivalents of the examples not shown are assumed within the scope of the technology disclosed in the specification of the present invention. Examples include the following: when at least one component is changed; when at least one component is added or omitted; when at least one component in at least one embodiment is extracted and combined with components in another embodiment .

此外，在以上所記載的實施形態中未特別指定地記載有材料名稱等之情形中，只要未產生矛盾則亦包含於該材料包含有其他的添加物之情形，例如於該材料包含有合金等。 In addition, when the name of a material is not specified in the embodiment described above, as long as there is no contradiction, it also includes the case where the material contains other additives, for example, the material contains an alloy, etc. .

此外，只要未產生矛盾，則在以上所記載的實施形態中記載成具備「一個」構成要素亦可具備「一個以上」。 In addition, as long as no contradiction arises, the above-described implementation form may state that there is "one" constituent element, or it may state that there is "more than one".

再者，於以上所記載的實施形態中的各個構成要素係概念性的單元，於本發明所說明所揭示的技術的範圍內包含下述情形：一個構成要素由複數個構造物所構成之情形；一個構成要素係與某個構造物的一部分對應之情形；一個構造物具備有複數個構成要素之情形。 In addition, each component in the embodiment described above is a conceptual unit, and within the scope of the technology disclosed in the description of the present invention, the case where one component is composed of a plurality of structures is included. ; A situation in which one component corresponds to a part of a structure; a situation in which a structure has multiple components.

此外，只要發揮相同的功能，亦可於以上所記載的實施形態中的各個構成要素包含具有其他的構造或者形狀之構造物。 In addition, as long as the same function is performed, each component in the above-described implementation form may also include structures with other structures or shapes.

5:自轉夾具 5: Rotating fixture

8,10:噴嘴 8,10: Nozzle

14,15:供給及吸引機構 14,15: Supply and attraction agencies

24:自轉基座 24: Rotating base

25:夾持構件 25: Clamping member

26A:對向構件 26A: Opposite member

27A:阻隔板 27A:Baffle plate

28:旋轉軸 28: Rotation axis

108,110:配管 108,110:Piping

127:爪部 127:Claw

203:藥液 203:Medicinal liquid

W:基板 W: substrate

Claims (12)

一種基板處理方法，係具備下述步驟：從第一噴嘴對基板噴出第一藥液；在噴出前述第一藥液後，吸引前述第一噴嘴內的液體；在停止吸引前述第一噴嘴內的前述液體後，從第二噴嘴對前述基板噴出與前述第一藥液不同的第二藥液；以及在噴出前述第一藥液後且在噴出前述第二藥液前，對前述基板噴出清洗液；在用以噴出前述清洗液之步驟中，前述第一噴嘴以及前述第二噴嘴雙方係以時間順序依序對前述基板噴出前述清洗液。 A substrate processing method comprises the following steps: spraying a first chemical liquid onto a substrate from a first nozzle; sucking the liquid in the first nozzle after spraying the first chemical liquid; spraying a second chemical liquid different from the first chemical liquid onto the substrate from a second nozzle after stopping sucking the liquid in the first nozzle; and spraying a cleaning liquid onto the substrate after spraying the first chemical liquid and before spraying the second chemical liquid; in the step of spraying the cleaning liquid, the first nozzle and the second nozzle spray the cleaning liquid onto the substrate in sequence in time. 一種基板處理方法，係在具有與基板對向地配置之阻隔板且於前述阻隔板的中央部共通地具備第一噴嘴以及第二噴嘴之基板處理裝置中具備下述步驟：從前述第一噴嘴對前述基板噴出第一藥液；在噴出前述第一藥液後，吸引前述第一噴嘴內的液體；在停止吸引前述第一噴嘴內的前述液體後，開始從前述第二噴嘴對前述基板噴出與前述第一藥液不同的第二藥液；以及在噴出前述第一藥液後且在噴出前述第二藥液前，對前述基板噴出清洗液；在用以吸引前述第一噴嘴內的前述液體之步驟中抑制吸引被前述基板與前述阻隔板圍繞的密閉空間的前述第二藥液的氛圍。 A substrate processing method includes the following steps in a substrate processing apparatus having a barrier plate arranged to face the substrate and having a first nozzle and a second nozzle in common at the center of the barrier plate: starting from the first nozzle Spray the first chemical liquid onto the substrate; after spraying the first chemical liquid, suck the liquid in the first nozzle; and after stopping sucking the liquid in the first nozzle, start spraying the substrate from the second nozzle. a second chemical liquid that is different from the first chemical liquid; and after spraying the first chemical liquid and before spraying the second chemical liquid, spraying the cleaning liquid on the substrate; in order to attract the aforementioned liquid in the first nozzle In the liquid step, the atmosphere of the second chemical liquid that is attracted to the closed space surrounded by the substrate and the barrier plate is suppressed. 如請求項1或2所記載之基板處理方法，其中在用以吸引前述第一噴嘴內的前述液體之步驟的期間從前述第二噴嘴噴出前述清洗液。 A substrate processing method as described in claim 1 or 2, wherein the cleaning liquid is ejected from the second nozzle during the step of sucking the liquid in the first nozzle. 如請求項1或2所記載之基板處理方法，其中用以吸引前述第一噴嘴內的前述液體之步驟係比用以噴出前述清洗液之步驟還先結束。 The substrate processing method according to claim 1 or 2, wherein the step of sucking the liquid in the first nozzle ends before the step of spraying the cleaning liquid. 如請求項1或2所記載之基板處理方法，其中在用以吸引前述第一噴嘴內的前述液體之步驟之前從前述第一噴嘴噴出前述清洗液。 The substrate processing method according to claim 1 or 2, wherein the cleaning liquid is sprayed from the first nozzle before the step of sucking the liquid in the first nozzle. 如請求項1或2所記載之基板處理方法，其中前述第一藥液以及前述第二藥液的一方為酸性的液體且另一方為鹼性的液體。 A substrate processing method as described in claim 1 or 2, wherein one of the first chemical solution and the second chemical solution is an acidic liquid and the other is an alkaline liquid. 如請求項1或2所記載之基板處理方法，其中前述清洗液為水。 The substrate processing method described in claim 1 or 2, wherein the cleaning liquid is water. 如請求項1或2所記載之基板處理方法，其中前述第一噴嘴與前述第二噴嘴係彼此配置於附近。 A substrate processing method as described in claim 1 or 2, wherein the first nozzle and the second nozzle are arranged near each other. 如請求項1或2所記載之基板處理方法，其中在前述基板的上方進行用以吸引前述第一噴嘴內的前述液體之步驟。 The substrate processing method according to claim 1 or 2, wherein the step of sucking the liquid in the first nozzle is performed above the substrate. 一種基板處理裝置，係具備：第一噴嘴，係對基板噴出第一藥液或者清洗液；吸引機構，係在噴出前述第一藥液後，吸引前述第一噴嘴內的液體；以及第二噴嘴，係在停止吸引前述第一噴嘴內的前述液體後，對前述基板噴出與前述第一藥液不同的第二藥液或者清洗液；在前述第一噴嘴噴出前述第一藥液後且在前述第二噴嘴噴出前述第二藥液前，前述第一噴嘴以及前述第二噴嘴雙方係以時間順序依序對前述基板噴出清洗液。 A substrate processing device comprises: a first nozzle for spraying a first chemical liquid or a cleaning liquid onto a substrate; a suction mechanism for sucking the liquid in the first nozzle after spraying the first chemical liquid; and a second nozzle for spraying a second chemical liquid or a cleaning liquid different from the first chemical liquid onto the substrate after stopping sucking the liquid in the first nozzle; after the first nozzle sprays the first chemical liquid and before the second nozzle sprays the second chemical liquid, the first nozzle and the second nozzle spray the cleaning liquid onto the substrate in sequence in time. 一種基板處理裝置，係具備：第一噴嘴，係對基板噴出第一藥液或者清洗液；第二噴嘴，係對前述基板噴出與前述第一藥液不同的第二藥液或者清洗液； 阻隔板，係以與前述基板對向地配置之方式將前述第一噴嘴以及前述第二噴嘴共通地設置於中央部，並形成與前述基板一起圍繞的密閉空間；吸引機構，係在前述第一噴嘴噴出前述第一藥液後，吸引前述第一噴嘴內的液體；以及控制部，係控制前述第一噴嘴、前述第二噴嘴、前述阻隔板以及前述吸引機構的動作；前述控制部係以下述方式控制前述第一噴嘴以及前述第二噴嘴：在停止藉由前述吸引機構吸引前述第一噴嘴內的前述液體後，開始從前述第二噴嘴對前述基板噴出前述第二藥液；以及在前述第一噴嘴噴出前述第一藥液後且在前述第二噴嘴噴出前述第二藥液前，對前述基板噴出前述清洗液。 A substrate processing device comprises: a first nozzle for spraying a first chemical liquid or a cleaning liquid onto a substrate; a second nozzle for spraying a second chemical liquid or a cleaning liquid different from the first chemical liquid onto the substrate; a baffle plate for arranging the first nozzle and the second nozzle in the center in a manner opposite to the substrate to form a closed space surrounding the substrate; a suction mechanism for sucking the liquid in the first nozzle after the first nozzle sprays the first chemical liquid; and a control unit, which controls the actions of the first nozzle, the second nozzle, the baffle plate and the suction mechanism; the control unit controls the first nozzle and the second nozzle in the following manner: after the suction mechanism stops sucking the liquid in the first nozzle, the second liquid chemical starts to be sprayed from the second nozzle to the substrate; and after the first nozzle sprays the first liquid chemical and before the second nozzle sprays the second liquid chemical, the cleaning liquid is sprayed to the substrate. 如請求項10或11所記載之基板處理裝置，其中在前述吸引機構吸引前述第一噴嘴內的前述液體之期間，前述第二噴嘴係噴出前述清洗液。 The substrate processing device as described in claim 10 or 11, wherein the second nozzle sprays the cleaning liquid while the suction mechanism is sucking the liquid in the first nozzle.
TW110116667A 2020-05-29 2021-05-10 Substrate processing method and substrate processing apparatus TWI836216B (en)

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Publication number Priority date Publication date Assignee Title
CN109155247A (en) 2016-05-25 2019-01-04 株式会社斯库林集团 Substrate board treatment and substrate processing method using same

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