TWI835029B - Panel package structure - Google Patents
Panel package structure Download PDFInfo
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- TWI835029B TWI835029B TW110144083A TW110144083A TWI835029B TW I835029 B TWI835029 B TW I835029B TW 110144083 A TW110144083 A TW 110144083A TW 110144083 A TW110144083 A TW 110144083A TW I835029 B TWI835029 B TW I835029B
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- emitting diode
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- side wall
- diode substrate
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- 239000000758 substrate Substances 0.000 claims abstract description 88
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 52
- 238000004806 packaging method and process Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000012467 final product Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
Description
本揭示內容是關於一種封裝結構。 This disclosure relates to a packaging structure.
隨著電子產品的技術發展,對於顯示面板的品質要求也越來越高。然而,製造顯示面板時會歷經許多製程,其增加電子產品受到外力碰撞而損害的風險。舉例來說,面板的封膠製程中會先上覆一層封裝膠(膜)於面板上,然後再進行封裝膠的裁切以符合預定的大小。但是由於封裝膠的厚度通常很薄,因此,面板仍有可能會於裁切製程或後續製程中受到損害,從而降低最終產品的品質。 With the technological development of electronic products, the quality requirements for display panels are becoming higher and higher. However, manufacturing display panels involves many processes, which increases the risk of electronic products being damaged by external collisions. For example, during the panel sealing process, a layer of sealant (film) is first applied to the panel, and then the sealant is cut to fit a predetermined size. However, since the thickness of the encapsulant is usually very thin, the panel may still be damaged during the cutting process or subsequent processes, thereby reducing the quality of the final product.
為了解決上述的問題,克服現有技術的不足,本揭示內容的目的在於提供一種封裝結構,可以改善上述問題,避免顯示面板因外力碰撞或彎折等損害。 In order to solve the above problems and overcome the shortcomings of the existing technology, the purpose of this disclosure is to provide a packaging structure that can improve the above problems and avoid damage to the display panel due to external force collision or bending.
本揭示內容提供一種封裝結構,包含發光二極體基板、發光二極體陣列、封裝膠。發光二極體基板上視之角落處具有至少一個非直角角落,此非直角角落包含第一側壁,第一側壁實質上垂直於發光二極體基板的上表面。發光二極體陣列設置於發光二極體基板上。封裝膠覆蓋發光二極體陣列以及發光二極體基板的上表面、第一側壁和第二側壁。發光二極體基板的第二側壁實質上垂直於發光二極體基板的上表面,第二側壁連接第一側壁且於連接處形成一角度。封裝膠的上表面大於發光二極體基板的上表面,且封裝膠上視之角落處具有至少一個直角角落。The present disclosure provides a packaging structure, including a light-emitting diode substrate, a light-emitting diode array, and packaging glue. The light-emitting diode substrate has at least one non-right-angled corner at a top view corner. The non-right-angled corner includes a first side wall, and the first side wall is substantially perpendicular to the upper surface of the light-emitting diode substrate. The light-emitting diode array is arranged on the light-emitting diode substrate. The encapsulant covers the light-emitting diode array and the upper surface, first side wall and second side wall of the light-emitting diode substrate. The second side wall of the light emitting diode substrate is substantially perpendicular to the upper surface of the light emitting diode substrate. The second side wall is connected to the first side wall and forms an angle at the connection point. The upper surface of the encapsulant is larger than the upper surface of the light-emitting diode substrate, and the upper corner of the encapsulant has at least one right-angled corner.
在一些實施方式中,非直角角落的第一側壁為平面。In some embodiments, the first sidewall of the non-right-angled corner is flat.
在一些實施方式中,非直角角落的第一側壁為曲面。In some embodiments, the first side wall of the non-right-angled corner is a curved surface.
在一些實施方式中,封裝膠包含0~0.5 wt.%的黑色粒子。In some embodiments, the encapsulant contains 0~0.5 wt.% black particles.
在一些實施方式中,角度大於90度且小於180度。In some embodiments, the angle is greater than 90 degrees and less than 180 degrees.
在一些實施方式中,封裝膠覆蓋發光二極體基板的第二側壁的覆蓋率介於0~100%。In some embodiments, the coverage of the second sidewall of the light-emitting diode substrate by the encapsulant is between 0% and 100%.
在一些實施方式中,封裝膠於發光二極體基板的上表面之材料相同於封裝膠於發光二極體基板的第二側壁之材料。In some embodiments, the material of the encapsulant on the upper surface of the light-emitting diode substrate is the same as the material of the encapsulant on the second sidewall of the light-emitting diode substrate.
在一些實施方式中,封裝膠於發光二極體基板的上表面之材料不同於封裝膠於發光二極體基板的第二側壁之材料。In some embodiments, the material of the encapsulant on the upper surface of the light-emitting diode substrate is different from the material of the encapsulant on the second sidewall of the light-emitting diode substrate.
在一些實施方式中,封裝膠於發光二極體基板的上表面之材料包含0~0.5 wt.%的黑色粒子。In some embodiments, the material of the encapsulant on the upper surface of the light-emitting diode substrate contains 0~0.5 wt.% black particles.
在一些實施方式中,封裝膠於發光二極體基板的第二側壁之材料包含0~20 wt.%的黑色粒子。In some embodiments, the material of the encapsulant on the second side wall of the light-emitting diode substrate contains 0~20 wt.% black particles.
本揭示內容提供一種包含前述之封裝結構所形成的拼接結構。The present disclosure provides a splicing structure formed by the aforementioned packaging structure.
以下將以實施方式對上述之說明做詳細的描述,並對本揭示內容之技術方案提供更進一步的解釋。The above description will be described in detail in the following embodiments, and further explanations of the technical solutions of the present disclosure will be provided.
以下揭示提供許多不同實施方式或實施例,用於實現本揭示內容的不同特徵。以下敘述部件與佈置的特定實施方式,以簡化本揭示內容。這些當然僅為實施例,並且不是意欲作為限制。舉例而言,在隨後的敘述中,第一特徵在第二特徵上方或在第二特徵上的形成,可包括第一特徵及第二特徵形成為直接接觸的實施方式,亦可包括有另一特徵可形成在第一特徵及第二特徵之間,以使得第一特徵及第二特徵可不直接接觸的實施方式。此外,本揭示內容可能會在不同的實例中重複標號或文字。重複的目的是為了簡化及明確敘述,而非界定所討論之不同實施方式及配置間的關係。The following disclosure provides many different implementations, or examples, for implementing various features of the present disclosure. Specific embodiments of components and arrangements are described below to simplify this disclosure. These are of course only examples and not intended to be limiting. For example, in the following description, the formation of the first feature above or on the second feature may include an embodiment in which the first feature and the second feature are in direct contact, or may include another embodiment. Features may be formed between the first feature and the second feature such that the first feature and the second feature may not be in direct contact. In addition, this disclosure may have repeated reference numbers or words in different instances. The purpose of repetition is to simplify and clarify the description but not to define the relationship between the various embodiments and configurations discussed.
另外,當數字或數字範圍描述為「大約」、「近似」及其他類似的用語,在此是為了涵蓋描述的數字為一合理範圍區間內的數字,如所屬技術領域中的技術人員應理解在+/- 10%之內所述的數字或其他數值。例如,用語「大約5 nm」涵蓋從4.5 nm 至5.5 nm的尺寸範圍。In addition, when a number or range of numbers is described as "approximately", "approximately" and other similar terms, it is intended to cover that the number described is a number within a reasonable range, as those skilled in the art should understand. +/- 10% of the stated number or other value. For example, the phrase "about 5 nm" covers the size range from 4.5 nm to 5.5 nm.
以下將以圖式揭露本揭示之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本揭示內容。也就是說,在本揭示內容的部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。A plurality of embodiments of the present disclosure will be disclosed in figures below. For clarity of explanation, many practical details will be explained in the following description. However, it should be understood that these practical details should not be used to limit the disclosure. That is, in some implementations of the present disclosure, these practical details are not necessary. In addition, for the sake of simplifying the drawings, some commonly used structures and components will be illustrated in a simple schematic manner in the drawings.
請參考第1圖。第1圖為根據本揭示內容之一些實施方式所繪示的封裝結構100的上視圖。封裝結構100包含發光二極體基板110、發光二極體陣列120和封裝膠130。發光二極體陣列120設置於發光二極體基板110上。封裝膠130設置於發光二極體陣列120和發光二極體基板110上。詳細來說,發光二極體陣列120設置於發光二極體基板110和封裝膠130之間。如第1圖所示,發光二極體基板110上視之角落處具有至少一個非直角角落112,且封裝膠130上視之角落處具有至少一個直角角落132。發光二極體基板110之非直角角落112可以降低封裝結構100因外力碰撞而損害的風險,從而提升最終產品的品質。封裝膠130之直角角落132可以防止拼接(tiling)後的拼接結構之漏光。Please refer to picture 1. Figure 1 is a top view of a
請再次參考第1圖,第一長度L1為發光二極體陣列120切角後於方向X上的長度,第二長度L2為發光二極體陣列120於方向X上的最大長度,第三長度L3為封裝膠130於方向X上的最大長度。第一長度L1小於第二長度L2,且第二長度L2小於第三長度L3。Please refer to Figure 1 again. The first length L1 is the length of the light-emitting
在一些實施方式中,發光二極體基板110的材料可例如為玻璃、石英、有機聚合物、不透光/反射材料或是其它可合適的材料。在一些實施方式中,發光二極體陣列120可為微發光二極體(micro light emitting diode;micro LED)、次毫米發光二極體(mini LED)或有機發光二極體(organic LED;OLED)。第1圖繪示出發光二極體陣列120為micro LED之實施例,發光二極體陣列120包含紅色發光二極體晶片122、綠色發光二極體晶片124和藍色發光二極體晶片126。然而,須了解的是,發光二極體陣列120也可包含其他顏色之發光二極體晶片。另外,第1圖之發光二極體晶片的個數不應用以限制本揭示內容。在一些實施方式中,封裝膠130的材料可包含機化合物、無機化合物、其它可合適的材料或其組合。有機化合物可例如是聚丙烯酸樹脂、環氧樹脂、烯丙基樹脂、酚醛樹脂、聚四氟乙烯、聚甲基丙烯酸甲酯(壓克力)或其組合。無機化合物可例如是氧化鋁、氧化矽(矽膠)、氧化硼、鋁矽酸鹽、硼矽酸鹽或其組合。在一些實施方式中,封裝膠130包含0~0.5 wt.%的黑色粒子。在其他實施方式中,封裝膠130包含0~20 wt.%的黑色粒子。黑色粒子的材料可例如為碳黑。In some embodiments, the material of the light-emitting
第2A圖為第1圖的發光二極體基板110之上視圖。第3圖為第2A圖的發光二極體基板110的立體示意圖。發光二極體基板110在方向Z上具有一厚度,如第3圖所示。發光二極體基板110上視之角落處具有至少一個非直角角落112,非直角角落112包含第一側壁114和第二側壁116,第一側壁114實質上垂直於發光二極體基板110的上表面118,且第二側壁116實質上垂直於發光二極體基板110的上表面118,如第2A圖和第3圖所示。如第3圖所示,第一側壁114為平面的側壁。換句話說,發光二極體基板110具有切角的角落。發光二極體基板110的第一側壁114連接第二側壁116。發光二極體基板110的第一側壁114和第二側壁116於連接處形成一角度θ。在一些實施方式中,角度θ大於90度且小於180度,例如91、120、125、130、135、140、145、150或179度。FIG. 2A is a top view of the light emitting
第2B圖和第2C圖為第1圖的發光二極體基板110之變化實施方式的上視圖。須說明的是,相同或相似之元件被給予相同的符號,並省略相關說明,不再贅述。第2B圖和第2C圖與第2A圖的差異在於發光二極體基板110、110b、110c的第一側壁114、114b、114c。請參照第2B圖,發光二極體基板110b之角落處具有至少一個非直角角落112b,非直角角落112b包含第一側壁114b以及與第一側壁114b連接的第二側壁116b。詳細來說,第一側壁114b為曲面向外的側壁。換句話說,第一側壁114b具有圓形化向外的角落。請參照第2C圖所示,發光二極體基板110c之角落處具有至少一個非直角角落112c,非直角角落112c包含第一側壁114c以及與第一側壁114c連接的第二側壁116c。詳細來說,第一側壁114c為曲面向內的側壁。換句話說,第一側壁114c具有圓形化向內的角落。第2B圖和第2C圖僅繪示出發光二極體基板110之一些變化實施方式,然而,其他形式之非直角角落112也包含在本揭示內容中。Figures 2B and 2C are top views of modified embodiments of the light emitting
第4A圖至第4C圖為沿著第1圖的線A-A’之一些實施方式的剖面示意圖。請同時參考第1圖、第4A圖至第4C圖,封裝膠130覆蓋發光二極體陣列120以及發光二極體基板110的上表面118、第一側壁114和第二側壁116。封裝膠130的上表面134大於發光二極體基板110的上表面118。換句話說,封裝膠130凸出於發光二極體基板110的第二側壁116,如第4A圖至第4C圖所示。在一些實施方式中,封裝膠130覆蓋發光二極體基板110的第二側壁116的覆蓋率介於0~100%,例如10、20、30、40、50、60、70、80或90%。舉例來說,如第4A圖所示,封裝膠130覆蓋發光二極體基板110的第二側壁116的覆蓋率為100%。須說明的是,第二側壁116的覆蓋率約等於第一側壁114的覆蓋率。封裝膠130於發光二極體基板110的上表面118上之厚度T1介於10
m至150
m,例如20、30、50、80、100或120
m。封裝膠130於發光二極體基板110的第二側壁116上之厚度T2介於10
m至650
m,例如20、50、100、200、300、400、500或600
m。封裝膠130於發光二極體基板110的第二側壁116上之寬度W1介於10
m至30
m,例如15、20或25
m。若寬度W1大於30
m,可能會影響拼接後的產品外觀,例如可能會被人眼看出一個發光二極體陣列120與另一個發光二極體陣列120之間的縫隙。
Figures 4A to 4C are schematic cross-sectional views of some embodiments along line AA' in Figure 1 . Please refer to Figure 1 and Figures 4A to 4C at the same time. The
第4B圖和第4C圖為沿著第1圖的線A-A’之一些變化實施方式的剖面示意圖。第4A圖至第4C圖差別在於封裝膠130覆蓋發光二極體基板110的第二側壁116的覆蓋率。如第4B圖所示,封裝膠130覆蓋發光二極體基板110的第二側壁116的覆蓋率為約50%。換句話說,約有一半的第二側壁116沒有被封裝膠130覆蓋。如第4C圖所示,封裝膠130覆蓋發光二極體基板110的第二側壁116的覆蓋率為0%。換句話說,第二側壁116沒有被封裝膠130覆蓋。Figures 4B and 4C are schematic cross-sectional views of some variant embodiments along line A-A' in Figure 1 . The difference between Figures 4A to 4C lies in the coverage of the
在一些實施方式中,封裝膠130於發光二極體基板110的上表面118之材料相同於封裝膠130於發光二極體基板110的第二側壁116之材料。在此些實施方式中,封裝膠130可包含0~0.5 wt.%的黑色粒子。當黑色粒子大於0.5 wt.%時,可能會影響封裝結構100的正面發光效率。In some embodiments, the material of the
在一些實施方式中,封裝膠130於發光二極體基板110的上表面118之材料不同於封裝膠130於發光二極體基板110的第二側壁116之材料。在此些實施方式中,於發光二極體基板110的上表面118的封裝膠130包含0~0.5 wt.%的黑色粒子。當發光二極體基板110的上表面118的封裝膠130之黑色粒子大於0.5 wt.%時,可能會影響封裝結構100的正面發光效率。於發光二極體基板110的第二側壁116的封裝膠130包含0~20 wt.%的黑色粒子,例如0.5、1.0、5、10或15 wt.%。當發光二極體基板110的第二側壁116的封裝膠130之黑色粒子大於20 wt.%時,可能對於側邊的遮光沒有有益的效果。In some embodiments, the material of the
第5圖為第1圖的封裝結構100之拼接結構500的上視圖。第5圖繪示四個封裝結構100於拼接後的拼接結構500。須說明的是,由於封裝膠130具有直角角落132,所以一個封裝結構100與另一個封裝結構100之間不會有拼接的縫隙。因此,也不會有亮光從一個封裝結構100與另一個封裝結構100之間透出。Figure 5 is a top view of the
綜上所述,本揭示內容的發光二極體基板上視之角落處具有至少一個非直角角落,且封裝膠上視之角落處具有至少一個直角角落。發光二極體基板之非直角角落可以降低封裝結構因外力碰撞或彎折等損害的風險,從而提升最終產品的品質。封裝膠之直角角落可以防止拼接後的拼接結構之漏光。To sum up, the light-emitting diode substrate of the present disclosure has at least one non-right-angled corner at a top-view corner, and the encapsulant has at least one right-angled corner at a top-view corner. The non-right-angled corners of the light-emitting diode substrate can reduce the risk of damage to the packaging structure due to external collision or bending, thereby improving the quality of the final product. The right-angled corners of the encapsulant can prevent light leakage in the spliced structure after splicing.
對於所屬技術領域人員來說,顯而易見的是,在不脫離本揭示的範圍或精神的情況下,可以對本揭示的結構進行各種修改和變化。鑑於前述內容,本揭示意圖涵蓋落入所附申請專利範圍範圍內的本揭示的修改和變化。It will be apparent to those skilled in the art that various modifications and changes can be made in the structures of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover the modifications and variations of the present disclosure falling within the scope of the appended claims.
100:封裝結構
110:發光二極體基板
110b:發光二極體基板
110c:發光二極體基板
112:非直角角落
112b:非直角角落
112c:非直角角落
114:第一側壁
114b:第一側壁
114c:第一側壁
116:第二側壁
116b:第二側壁
116c:第二側壁
118:上表面
120:發光二極體陣列
122:紅色發光二極體晶片
124:綠色發光二極體晶片
126:藍色發光二極體晶片
130:封裝膠
132:直角角落
134:上表面
500:拼接結構
A-A’:線
L1:第一長度
L2:第二長度
L3:第三長度
T1:厚度
T2:厚度
W1:寬度
X, Y, Z:方向
θ:角度
100:Package structure
110:
當結合隨附圖式進行閱讀時,本揭示內容之態樣將能被充分地理解。應注意,根據業界標準實務,各特徵並非按比例繪製且僅用於圖示目的。事實上,出於論述清晰之目的,可任意增加或減小各特徵之尺寸。 第1圖為根據本揭示內容之一些實施方式所繪示的封裝結構的上視圖。 第2A圖為第1圖的發光二極體基板之上視圖。 第2B圖和第2C圖為第1圖的發光二極體基板之變化實施方式的上視圖。 第3圖為第2A圖的發光二極體基板的立體示意圖。 第4A圖至第4C圖為沿著第1圖的線A-A’之一些實施方式的剖面示意圖。 第5圖為第1圖的封裝結構之拼接結構的上視圖。 The disclosure will be fully understood when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, features are not drawn to scale and are for illustration purposes only. In fact, the dimensions of various features may be arbitrarily increased or reduced for clarity of discussion. Figure 1 is a top view of a packaging structure according to some embodiments of the present disclosure. Figure 2A is a top view of the light emitting diode substrate in Figure 1. Figures 2B and 2C are top views of modified embodiments of the light emitting diode substrate in Figure 1 . Figure 3 is a schematic three-dimensional view of the light-emitting diode substrate in Figure 2A. Figures 4A to 4C are schematic cross-sectional views of some embodiments along line A-A' in Figure 1 . Figure 5 is a top view of the splicing structure of the package structure in Figure 1 .
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without
100:封裝結構 100:Package structure
110:發光二極體基板 110:LED substrate
112:非直角角落 112: Non-right angle corner
114:第一側壁 114:First side wall
116:第二側壁 116:Second side wall
120:發光二極體陣列 120:Light emitting diode array
122:紅色發光二極體晶片 122:Red light emitting diode chip
124:綠色發光二極體晶片 124:Green light emitting diode chip
126:藍色發光二極體晶片 126:Blue light emitting diode chip
130:封裝膠 130:Packing glue
132:直角角落 132: Right angle corner
A-A’:線 A-A’: line
L1:第一長度 L1: first length
L2:第二長度 L2: second length
L3:第三長度 L3: The third length
X,Y:方向 X,Y: direction
θ:角度 θ: angle
Claims (12)
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TWI835029B true TWI835029B (en) | 2024-03-11 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160096345A1 (en) * | 2011-05-13 | 2016-04-07 | Nippon Electric Glass Co., Ltd. | Laminate, method for cutting laminate, method for processing laminate, and device and method for cutting brittle plate-like object |
US20180151664A1 (en) * | 2014-09-25 | 2018-05-31 | X-Celeprint Limited | Redistribution layer for substrate contacts |
CN209981265U (en) * | 2019-05-15 | 2020-01-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source |
US20210202449A1 (en) * | 2019-12-27 | 2021-07-01 | Samsung Electronics Co., Ltd. | Display apparatus having display module and manufacturing method thereof |
CN214428633U (en) * | 2021-03-30 | 2021-10-19 | 广州视源电子科技股份有限公司 | Lamp panel |
-
2021
- 2021-11-25 TW TW110144083A patent/TWI835029B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160096345A1 (en) * | 2011-05-13 | 2016-04-07 | Nippon Electric Glass Co., Ltd. | Laminate, method for cutting laminate, method for processing laminate, and device and method for cutting brittle plate-like object |
US20180151664A1 (en) * | 2014-09-25 | 2018-05-31 | X-Celeprint Limited | Redistribution layer for substrate contacts |
CN209981265U (en) * | 2019-05-15 | 2020-01-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source |
US20210202449A1 (en) * | 2019-12-27 | 2021-07-01 | Samsung Electronics Co., Ltd. | Display apparatus having display module and manufacturing method thereof |
CN214428633U (en) * | 2021-03-30 | 2021-10-19 | 广州视源电子科技股份有限公司 | Lamp panel |
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