TWI833265B - Micro light emitting diode display device - Google Patents

Micro light emitting diode display device Download PDF

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TWI833265B
TWI833265B TW111124466A TW111124466A TWI833265B TW I833265 B TWI833265 B TW I833265B TW 111124466 A TW111124466 A TW 111124466A TW 111124466 A TW111124466 A TW 111124466A TW I833265 B TWI833265 B TW I833265B
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light
layer
conductive layer
emitting
display device
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TW202310391A (en
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陳彥燁
曾于芮
吳志凌
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錼創顯示科技股份有限公司
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Priority to KR1020220104123A priority patent/KR20230028180A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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Abstract

A micro light-emitting diode display device including a circuit substrate, an epitaxy structure and a conducting layer is provided. The epitaxy structure is electrically connected to the circuit substrate, and includes a common layer and a plurality of light-emitting platforms. The plurality of light-emitting platforms are disposed on the common layer, wherein a thickness of the common layer is less than a thickness of the plurality of light-emitting platforms, and the common layer has a first surface exposed by the plurality of light-emitting platforms and a second surface opposite to the first surface. The conducting layer is disposed on the second surface of the common layer and exposes a plurality of sub-areas of the second surface, wherein a vertical projection of the conductive layer onto the common layer overlaps a vertical projection of first surfaced onto the common layer.

Description

微型發光二極體顯示裝置Micro light emitting diode display device

本發明是有關於一種顯示裝置，且特別是有關於一種微型發光二極體顯示裝置。The present invention relates to a display device, and in particular to a micro light-emitting diode display device.

微型發光二極體顯示器中的多個像素可以藉由在半導體基底層上配置多個半導體發光平台來形成。每一個半導體發光平台對應一個子像素，並以陣列的形式配置於半導體基底層上。半導體基底層除了做為基底層，還可以做為各發光平台的共電極，透過接合金屬層電性連接至電路基板。Multiple pixels in a micro-LED display can be formed by arranging multiple semiconductor light-emitting platforms on a semiconductor base layer. Each semiconductor light-emitting platform corresponds to a sub-pixel and is arranged in an array on the semiconductor base layer. In addition to serving as the base layer, the semiconductor base layer can also serve as the common electrode of each light-emitting platform, and is electrically connected to the circuit substrate through the bonding metal layer.

然而，相較於導體，半導體基底層的電阻值較高。對於與公共接地點（common ground point）距離較遠的發光平台，能夠發生復合（recombination）的電子電洞對的對數較低。相對的，對於與公共接地點距離越近的發光平台，能夠發生復合（recombination）的電子電洞對的對數較高。因此，微型發光二極體顯示器會有亮度不均勻的狀況。However, the resistance of the semiconductor base layer is higher compared to the conductor. For a light-emitting platform that is far away from the common ground point, the number of electron-hole pairs that can recombine is lower. In contrast, for a light-emitting platform that is closer to a common ground point, the number of electron-hole pairs that can undergo recombination is higher. Therefore, the micro light-emitting diode display will have uneven brightness.

本發明提供一種微型發光二極體顯示裝置，發光亮度均勻。The invention provides a micro light-emitting diode display device with uniform luminous brightness.

根據本發明一實施例，提供一種微型發光二極體顯示裝置，包括電路基板、磊晶結構以及導電層。磊晶結構電性連接電路基板，且包括共用層以及多個發光平台。這些發光平台配置於共用層上，其中共用層的厚度小於這些發光平台的厚度，且共用層具有被這些發光平台暴露出的第一表面，以及與第一表面相對的第二表面。導電層配置於共用層的第二表面上，並暴露出第二表面的多個子區，其中導電層在共用層的垂直投影重疊第一表面在共用層的垂直投影。According to an embodiment of the present invention, a micro light-emitting diode display device is provided, including a circuit substrate, an epitaxial structure and a conductive layer. The epitaxial structure is electrically connected to the circuit substrate and includes a common layer and multiple light-emitting platforms. The light-emitting platforms are configured on a common layer, where the thickness of the common layer is smaller than the thickness of the light-emitting platforms, and the common layer has a first surface exposed by the light-emitting platforms, and a second surface opposite to the first surface. The conductive layer is disposed on the second surface of the common layer and exposes a plurality of sub-regions of the second surface, wherein a vertical projection of the conductive layer on the common layer overlaps a vertical projection of the first surface on the common layer.

根據本發明另一實施例，提供一種微型發光二極體顯示裝置，包括電路基板、磊晶結構以及透明導電層。磊晶結構電性連接電路基板，且包括共用層以及多個發光平台。這些發光平台配置於共用層上，其中共用層具有被這些發光平台暴露出的第一表面，以及與第一表面相對的第二表面。透明導電層配置於共用層的第二表面上，其中透明導電層完全覆蓋第二表面。According to another embodiment of the present invention, a micro light-emitting diode display device is provided, including a circuit substrate, an epitaxial structure and a transparent conductive layer. The epitaxial structure is electrically connected to the circuit substrate and includes a common layer and multiple light-emitting platforms. These light-emitting platforms are configured on a common layer, wherein the common layer has a first surface exposed by the light-emitting platforms, and a second surface opposite to the first surface. The transparent conductive layer is disposed on the second surface of the common layer, wherein the transparent conductive layer completely covers the second surface.

基於上述，本發明實施例提供的微型發光二極體顯示裝置將導電層設置於磊晶結構的共用層上。由於導電層的電阻值小於共用層的電阻值，透過導電層，能使電路基板的電流能夠傳遞更為均勻。在這樣的情況下，對於與公共接地點距離不同的發光平台，相同的電位差能夠驅動相同對數的電子電洞對進行復合，可以避免微型發光二極體顯示裝置發生亮度不均勻的狀況。除此之外，隨著解析度需求愈來愈高，發光平台也就是子像素的排列更為密集，相較於習知將導電層設置於共用層的第一表面的狀況，導電層被設置於第二表面，大幅提高了良率。Based on the above, in the micro light-emitting diode display device provided by the embodiment of the present invention, the conductive layer is disposed on the common layer of the epitaxial structure. Since the resistance value of the conductive layer is smaller than the resistance value of the common layer, the current of the circuit substrate can be transmitted more uniformly through the conductive layer. In this case, for light-emitting platforms with different distances from the common ground point, the same potential difference can drive the same number of electron-hole pairs to recombine, which can avoid uneven brightness in the micro-LED display device. In addition, as the resolution requirements become higher and higher, the light-emitting platform, that is, the sub-pixels are arranged more densely. Compared with the conventional situation where the conductive layer is disposed on the first surface of the common layer, the conductive layer is disposed On the second surface, the yield rate is greatly improved.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

參照圖1A及圖1B，微型發光二極體顯示裝置1具備顯示區A1以及非顯示區A2，且包括電路基板C1、磊晶結構ES以及導電層30。顯示區A1指設置有多個顯示子像素PX的區域，非顯示區A2至少部分圍繞顯示區A1配置，可為設置有多個驅動元件(未繪示)的區域。每個顯示子像素PX具備一個發光平台20以提供微型發光二極體顯示裝置1的影像光。Referring to FIGS. 1A and 1B , the micro light-emitting diode display device 1 has a display area A1 and a non-display area A2, and includes a circuit substrate C1, an epitaxial structure ES, and a conductive layer 30. The display area A1 refers to an area where a plurality of display sub-pixels PX are provided. The non-display area A2 is at least partially arranged around the display area A1 and may be an area where a plurality of driving elements (not shown) are provided. Each display sub-pixel PX is provided with a light-emitting platform 20 to provide image light of the micro-LED display device 1 .

磊晶結構ES包括共用層10以及多個發光平台20。如圖1B所示，分別對應多個顯示子像素PX的多個發光平台20配置於共用層10上，且每個發光平台20包括第一型半導體層201、第二型半導體層202以及發光層203，其中發光層203是多重量子井（Multiple Quantum Well，MQW）。共用層10配置於平行由第一方向D1以及第二方向D2所形成的面的平面上，且具有被多個發光平台20暴露出的第一表面101，以及與第一表面101相對的第二表面102。The epitaxial structure ES includes a common layer 10 and a plurality of light-emitting platforms 20 . As shown in FIG. 1B , multiple light-emitting platforms 20 respectively corresponding to multiple display sub-pixels PX are arranged on the common layer 10 , and each light-emitting platform 20 includes a first-type semiconductor layer 201 , a second-type semiconductor layer 202 and a light-emitting layer. 203, wherein the light-emitting layer 203 is a Multiple Quantum Well (MQW). The common layer 10 is arranged on a plane parallel to the plane formed by the first direction D1 and the second direction D2, and has a first surface 101 exposed by the plurality of light emitting platforms 20, and a second surface opposite to the first surface 101. Surface 102.

根據本發明一實施例，共用層10是N型半導體，且第一型半導體層201是N型半導體，第二型半導體層202是P型半導體，但是本發明不限於此。在本發明的另一實施例中，共用層10是P型半導體，第一型半導體層201是P型半導體，第二型半導體層202是N型半導體。特別說明的是，共用層10與第一型半導體層201可為一體成型，亦即兩者是同一層。例如是透過蝕刻製程，形成多個分離的第一型半導體層201和連續的共用層10，可增加巨量轉移至電路基板C1時的良率，並留共用層10做為共電極，降低功耗。According to an embodiment of the invention, the common layer 10 is an N-type semiconductor, the first-type semiconductor layer 201 is an N-type semiconductor, and the second-type semiconductor layer 202 is a P-type semiconductor, but the invention is not limited thereto. In another embodiment of the present invention, the common layer 10 is a P-type semiconductor, the first-type semiconductor layer 201 is a P-type semiconductor, and the second-type semiconductor layer 202 is an N-type semiconductor. In particular, the common layer 10 and the first-type semiconductor layer 201 may be integrally formed, that is, they are the same layer. For example, through an etching process, a plurality of separated first-type semiconductor layers 201 and a continuous common layer 10 are formed, which can increase the yield when transferring large quantities to the circuit substrate C1, and leave the common layer 10 as a common electrode, reducing power consumption. Consumption.

電路基板C1可以例如是互補式金屬氧化物半導體（Complementary Metal-Oxide-Semiconductor, CMOS）基板、矽基液晶（Liquid Crystal on Silicon, LCOS）基板、薄膜電晶體（Thin Film Transistor, TFT）基板或是其他具有工作電路的基板，於此並不加以限制。如圖1B所示，磊晶結構ES通過接合金屬層120、130、140、150電性連接電路基板C1，其中接合金屬層140、150為公共接地點。當以電路基板C1對任一接合金屬層120施加電壓，使接合金屬層120與公共接地點之間具備電位差，電位差會導致電流的產生，在連接被施加電壓的該個接合金屬層120的發光平台20中會發生電子電洞對的復合，因而產生光。發光平台20發出的光沿著大致上平行第三方向D3的方向射出微型發光二極體顯示裝置1，進入使用者的眼睛，其中第一方向D1、第二方向D2以及第三方向D3互相垂直。The circuit substrate C1 may be, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Liquid Crystal on Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate, or a Other substrates with working circuits are not limited here. As shown in FIG. 1B , the epitaxial structure ES is electrically connected to the circuit substrate C1 through bonding metal layers 120, 130, 140, and 150, where the bonding metal layers 140 and 150 are common ground points. When a voltage is applied to any bonding metal layer 120 using the circuit substrate C1, a potential difference exists between the bonding metal layer 120 and the common ground point. The potential difference will cause the generation of current, and the luminescence of the bonding metal layer 120 to which the voltage is applied will be connected. Recombination of electron-hole pairs occurs in the platform 20, thereby generating light. The light emitted by the light-emitting platform 20 exits the micro-LED display device 1 in a direction that is substantially parallel to the third direction D3, and enters the user's eyes, where the first direction D1, the second direction D2, and the third direction D3 are perpendicular to each other. .

由於被用做為共電極的共用層10為半導體，其電阻值高於導體。當將一預定的電位差施加於公共接地點以及距離公共接地點較遠的接合金屬層120，對應的發光平台20發生復合的電子電洞對的對數會較低。當將相同的電位差施加於公共接地點以及距離公共接地點較近的接合金屬層120，對應的發光平台20發生復合的電子電洞對的對數會較高。為了避免上述的狀況，導電層30被配置於共用層10的第二表面102上，且共用層10在第三方向D3上的厚度被配置為小於發光平台20的厚度，以利用電阻較低的導電層30輔助傳遞電流，使電流能夠均勻分布。即便將相同的電位差施加於公共接地點以及距離公共接地點較遠的接合金屬層120，對應的發光平台20發生復合的電子電洞對的對數不會較低，並避免發光平台20的出光在共用層10內部反射而造成光損。因此，微型發光二極體顯示裝置1的每個發光平台20在施加相同的電位差下可以具有相同的亮度，微型發光二極體顯示裝置1可以具有良好的亮度均勻性。Since the common layer 10 used as a common electrode is a semiconductor, its resistance value is higher than that of a conductor. When a predetermined potential difference is applied to the common ground point and the bonding metal layer 120 that is far away from the common ground point, the number of pairs of electron-hole pairs that recombine in the corresponding light-emitting platform 20 will be lower. When the same potential difference is applied to the common ground point and the bonding metal layer 120 that is closer to the common ground point, the number of electron-hole pairs that recombine in the corresponding light-emitting platform 20 will be higher. In order to avoid the above situation, the conductive layer 30 is disposed on the second surface 102 of the common layer 10 , and the thickness of the common layer 10 in the third direction D3 is configured to be smaller than the thickness of the light-emitting platform 20 to utilize the lower resistance. The conductive layer 30 assists in transmitting current so that the current can be evenly distributed. Even if the same potential difference is applied to the common ground point and the bonding metal layer 120 that is far away from the common ground point, the number of pairs of electrons and holes that recombine in the corresponding light-emitting platform 20 will not be lower, and the light emission of the light-emitting platform 20 will be avoided. Internal reflection of the common layer 10 causes light loss. Therefore, each light-emitting platform 20 of the micro light-emitting diode display device 1 can have the same brightness under the same potential difference applied, and the micro light-emitting diode display device 1 can have good brightness uniformity.

當導電層30的面積越大，電流的均勻度較佳，微型發光二極體顯示裝置1的亮度均勻性就越好。若導電層30在共用層10的垂直投影形成為第一投影，且第一表面101在共用層10的垂直投影形成為第二投影，在一實施例中，第一投影與第二投影相重疊的部分的面積大於或等於第二投影的面積的0.5倍。在一實施例中，第一表面101在共用層10的垂直投影（第二投影）完全落在導電層30在共用層10的垂直投影（第一投影）中。在另一實施例中，第一表面101在共用層10的垂直投影（第二投影）完全落在導電層30在共用層10的垂直投影（第一投影）中，且第一投影與第二投影相重疊的部分的面積等於第二投影的面積。When the area of the conductive layer 30 is larger, the uniformity of the current is better, and the brightness uniformity of the micro light-emitting diode display device 1 is better. If the vertical projection of the conductive layer 30 on the common layer 10 forms a first projection, and the vertical projection of the first surface 101 on the common layer 10 forms a second projection, in one embodiment, the first projection overlaps with the second projection. The area of the part is greater than or equal to 0.5 times the area of the second projection. In one embodiment, the vertical projection (second projection) of the first surface 101 on the common layer 10 completely falls within the vertical projection (first projection) of the conductive layer 30 on the common layer 10 . In another embodiment, the vertical projection (second projection) of the first surface 101 on the common layer 10 completely falls within the vertical projection (first projection) of the conductive layer 30 on the common layer 10 , and the first projection is different from the second projection. The area of the overlapping portion of the projections is equal to the area of the second projection.

在本實施例中，導電層30為不透明的高導電率材料，例如是金、鈦、鋁、銀、鉑及其合金等金屬材料。因此，導電層30被設置為暴露出第二表面102的多個子區102S，多個子區102S分別對應多個發光平台20。具體而言，如圖1B所示，多個子區102S在共用層10的垂直投影分別重疊多個發光平台20在共用層10的垂直投影，使得每個發光平台20發出的光得以穿透對應的子區102S後射出微型發光二極體顯示裝置1。導電層30在共用層10的垂直投影重疊第一表面101在共用層10的垂直投影，且不與發光平台20在共用層10的垂直投影重疊，但是本發明不以此為限。在本發明一實施例中，導電層30在共用層10的垂直投影與至少部分的發光平台20在共用層10的垂直投影部分重疊。換句話說，多個子區102S中的至少一部分在共用層10的垂直投影小於對應的那些發光平台20在共用層10的垂直投影。在這樣的配置下，那些發光平台20發出的光受到導電層30的進一步限制，光行進的方向更集中，避免各顯示子像素PX之間發生串音（crosstalk）。較佳的，多個子區102S中的至少一部分在共用層10的垂直投影與對應的那些發光平台20在共用層10的垂直投影的比例介於0.5~1之間，小於0.5可能讓出光率不夠。In this embodiment, the conductive layer 30 is an opaque high conductivity material, such as gold, titanium, aluminum, silver, platinum and alloys thereof. Therefore, the conductive layer 30 is disposed to expose a plurality of sub-regions 102S of the second surface 102 , and the plurality of sub-regions 102S respectively correspond to the plurality of light-emitting platforms 20 . Specifically, as shown in FIG. 1B , the vertical projections of multiple sub-regions 102S on the common layer 10 respectively overlap the vertical projections of multiple light-emitting platforms 20 on the common layer 10 , so that the light emitted by each light-emitting platform 20 can penetrate the corresponding The micro light-emitting diode display device 1 is emitted from the sub-region 102S. The vertical projection of the conductive layer 30 on the common layer 10 overlaps the vertical projection of the first surface 101 on the common layer 10 and does not overlap with the vertical projection of the light-emitting platform 20 on the common layer 10, but the invention is not limited thereto. In an embodiment of the present invention, the vertical projection of the conductive layer 30 on the common layer 10 partially overlaps with the vertical projection of at least part of the light-emitting platform 20 on the common layer 10 . In other words, the vertical projection of at least a part of the plurality of sub-regions 102S on the common layer 10 is smaller than the vertical projection of the corresponding light emitting platforms 20 on the common layer 10 . Under such a configuration, the light emitted by those light-emitting platforms 20 is further restricted by the conductive layer 30, and the direction of light travel is more concentrated, thereby avoiding crosstalk between the display sub-pixels PX. Preferably, the ratio of the vertical projection of at least a part of the plurality of sub-regions 102S on the common layer 10 to the vertical projection of the corresponding light-emitting platforms 20 on the common layer 10 is between 0.5 and 1. If it is less than 0.5, the light extraction rate may be insufficient. .

進一步來說，由於導電層30為不透明的高導電率材料，其厚度被配置為小於或等於磊晶結構ES的厚度，以降低各發光平台20發出的光被導電層30吸收的光量。還應當說明的是，配置於顯示區A1的導電層30的總面積大於配置於非顯示區A2的導電層30的總面積，以確保電流能夠在顯示區A1的導電層30中被更均勻地傳遞，每個發光平台20在施加相同的電位差下具有相同的亮度。Furthermore, since the conductive layer 30 is an opaque high-conductivity material, its thickness is configured to be less than or equal to the thickness of the epitaxial structure ES to reduce the amount of light emitted by each light-emitting platform 20 that is absorbed by the conductive layer 30 . It should also be noted that the total area of the conductive layer 30 disposed in the display area A1 is larger than the total area of the conductive layer 30 disposed in the non-display area A2 to ensure that the current can be more evenly distributed in the conductive layer 30 of the display area A1 Transferring, each light-emitting platform 20 has the same brightness under the same applied potential difference.

在本實施例中，微型發光二極體顯示裝置1還包括半導體墊高部40，其中半導體墊高部40以及做為公共接地點的接合金屬層140、150皆配置於非顯示區A2，多個發光平台20配置於顯示區A1內。In this embodiment, the micro light-emitting diode display device 1 further includes a semiconductor pad 40 , where the semiconductor pad 40 and the bonding metal layers 140 and 150 serving as common ground points are disposed in the non-display area A2 . A light-emitting platform 20 is arranged in the display area A1.

半導體墊高部40可以和多個發光平台20在同一個製程中製造，並具有類似的結構。由於發光平台20與半導體墊高部40在遠離共用層10側的頂面為共平面，可以提高將電路基板C1上的接合金屬層150與接合金屬層130分別與接合金屬層140與接合金屬層120相接合時的良率，且接合金屬層140具有外延段140E，使得接合金屬層140能夠電性連接於共用層10與接合金屬層150之間。The semiconductor pad 40 can be manufactured in the same process as the plurality of light emitting platforms 20 and have a similar structure. Since the top surfaces of the light emitting platform 20 and the semiconductor pad 40 on the side away from the common layer 10 are coplanar, it is possible to improve the connection between the bonding metal layer 150 and the bonding metal layer 130 on the circuit substrate C1 and the bonding metal layer 140 and the bonding metal layer respectively. 120 when bonded, and the bonding metal layer 140 has an epitaxial section 140E, so that the bonding metal layer 140 can be electrically connected between the common layer 10 and the bonding metal layer 150 .

為了充分說明本發明的各種實施態樣，將在下文描述本發明的其他實施例。在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。In order to fully explain various implementation aspects of the invention, other embodiments of the invention will be described below. It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be repeated in the following embodiments.

參照圖2A及圖2B，微型發光二極體顯示裝置2具備顯示區A1以及非顯示區A2，且包括電路基板C1、磊晶結構ES以及導電層30A。多個發光平台20以四個發光平台20為單位被分群為多個發光平台群20G；導電層30A被設置為暴露出第二表面102的多個子區102G，其中多個子區102G分別對應多個發光平台群20G。但是本發明不以此為限，在一些實施例中，微型發光二極體顯示裝置2中的多個發光平台20以至少三個發光平台20為單位被分群為多個發光平台群20G，其中在後續配置色轉換元件(未繪示，例如量子點)於至少三個發光平台20所對應的第二表面102上時，至少三個發光平台20可以分別發出紅光、綠光以及藍光，形成全彩的顯示裝置。Referring to FIGS. 2A and 2B , the micro light-emitting diode display device 2 has a display area A1 and a non-display area A2, and includes a circuit substrate C1, an epitaxial structure ES, and a conductive layer 30A. The plurality of light-emitting platforms 20 are grouped into a plurality of light-emitting platform groups 20G in units of four light-emitting platforms 20; the conductive layer 30A is configured to expose a plurality of sub-regions 102G of the second surface 102, wherein the plurality of sub-regions 102G respectively correspond to a plurality of Luminous platform group 20G. However, the present invention is not limited thereto. In some embodiments, the multiple light-emitting platforms 20 in the micro-LED display device 2 are grouped into multiple light-emitting platform groups 20G in units of at least three light-emitting platforms 20, where When the color conversion elements (not shown, such as quantum dots) are subsequently disposed on the second surface 102 corresponding to the at least three light-emitting platforms 20, the at least three light-emitting platforms 20 can respectively emit red light, green light and blue light, forming a Full color display device.

類似於微型發光二極體顯示裝置1，配置於微型發光二極體顯示裝置2的顯示區A1的導電層30A的總面積大於配置於非顯示區A2的導電層30A的總面積，以確保電流能夠在顯示區A1的導電層30A中被更均勻地傳遞，每個發光平台20在施加相同的電位差下具有相同的亮度。Similar to the micro LED display device 1 , the total area of the conductive layer 30A configured in the display area A1 of the micro LED display device 2 is larger than the total area of the conductive layer 30A configured in the non-display area A2 to ensure current flow. can be transmitted more uniformly in the conductive layer 30A of the display area A1, and each light-emitting platform 20 has the same brightness under the same potential difference applied.

參照圖3，微型發光二極體顯示裝置3具備顯示區以及非顯示區，且包括電路基板C1、磊晶結構ES、導電層30B、導電層50以及絕緣層220。導電層30B包括配置於顯示區的導電層30B1以及配置於非顯示區的導電層30B2。Referring to FIG. 3 , the micro light-emitting diode display device 3 has a display area and a non-display area, and includes a circuit substrate C1 , an epitaxial structure ES, a conductive layer 30B, a conductive layer 50 and an insulating layer 220 . The conductive layer 30B includes a conductive layer 30B1 disposed in the display area and a conductive layer 30B2 disposed in the non-display area.

導電層30B1在遠離第二表面102的方向（即，沿著第三方向D3的正方向）上的寬度漸減，而且有下寬上窄的狀況，在此圖3所示的橫截面圖中具有錐形的形狀，使得對應的發光平台20發出的光得以反射往中心更集中。在後續配置色轉換元件(未繪示，例如量子點)於發光平台20對應的第二表面102上時，導電層30B1形成的凹槽G讓配置於其內的色轉換元件可具有製程裕度較大的容置空間。在其他實施例中，導電層30B1在遠離第二表面102的方向上的寬度漸減，而在橫截面圖中具有梯形的形狀。The width of the conductive layer 30B1 gradually decreases in the direction away from the second surface 102 (that is, along the positive direction of the third direction D3), and is wider at the bottom and narrower at the top. In the cross-sectional view shown in FIG. 3 , the width of the conductive layer 30B1 is gradually reduced. The conical shape allows the light emitted by the corresponding light-emitting platform 20 to be reflected toward the center to be more concentrated. When the color conversion element (not shown, such as quantum dots) is subsequently disposed on the second surface 102 corresponding to the light-emitting platform 20, the groove G formed by the conductive layer 30B1 allows the color conversion element disposed therein to have a process margin. Larger accommodation space. In other embodiments, the conductive layer 30B1 has a gradually decreasing width in a direction away from the second surface 102 and has a trapezoidal shape in a cross-sectional view.

非顯示區中的導電層30B2還配置於貫穿共用層10的通孔10H中，以電性連接接合金屬層140、接合金屬層150以及電路基板C1。來自電路基板C1的電流得以依序傳遞於接合金屬層150、接合金屬層140以及通孔10H中的導電層30B2而到達第二表面102上的導電層30B2以及導電層30B1，而不需經過電阻值較高的共用層10。配置於顯示區的導電層30B1的總面積大於配置於非顯示區的導電層30B2的總面積，以確保電流能夠在導電層30B1中被更均勻地傳遞，每個發光平台20在施加相同的電位差下具有相同的亮度。The conductive layer 30B2 in the non-display area is also disposed in the through hole 10H penetrating the common layer 10 to electrically connect the bonding metal layer 140, the bonding metal layer 150 and the circuit substrate C1. The current from the circuit substrate C1 is sequentially transmitted to the bonding metal layer 150 , the bonding metal layer 140 and the conductive layer 30B2 in the through hole 10H to reach the conductive layer 30B2 and the conductive layer 30B1 on the second surface 102 without passing through a resistor. A higher value is common layer 10. The total area of the conductive layer 30B1 disposed in the display area is larger than the total area of the conductive layer 30B2 disposed in the non-display area to ensure that the current can be transmitted more evenly in the conductive layer 30B1, and each light-emitting platform 20 applies the same potential difference. have the same brightness.

本實施例的微型發光二極體顯示裝置3還包括另一導電層50，配置於共用層10的第一表面101上。換句話說，導電層50配置於發光平台20間。導電層50同樣被配置以傳遞來自電路基板C1的電流，絕緣層220被配置於導電層50與多個發光平台20間。The micro light-emitting diode display device 3 of this embodiment also includes another conductive layer 50 disposed on the first surface 101 of the common layer 10 . In other words, the conductive layer 50 is disposed between the light emitting platforms 20 . The conductive layer 50 is also configured to transmit current from the circuit substrate C1 , and the insulating layer 220 is configured between the conductive layer 50 and the plurality of light-emitting platforms 20 .

參照圖4，微型發光二極體顯示裝置4包括電路基板C1、磊晶結構ES1以及導電層30C。Referring to FIG. 4 , the micro light-emitting diode display device 4 includes a circuit substrate C1 , an epitaxial structure ES1 and a conductive layer 30C.

磊晶結構ES1包括共用層10A以及多個發光平台20。共用層10A可以藉由在圖案化磊晶基板上磊晶成長而形成，且包括多個立體圖案102P，多個立體圖案102P配置於第二表面102A上。也就是說，共用層10A與圖1B所示共用層10不同在於，共用層10的第二表面102為平面，共用層10A的第二表面102A具有多個立體圖案102P。導電層30C配置於多個立體圖案102P形成的多個凹槽G’間。在這樣的狀況下，配置於多個立體圖案102P上的導電層30C與第二表面102A之間的接觸面積會大於圖1B中導電層30與第二表面102之間的接觸面積，提高共用層10A與導電層30C的接合良率，並提高來自於電路基板C1的電流的傳遞效率。The epitaxial structure ES1 includes a common layer 10A and a plurality of light-emitting platforms 20 . The common layer 10A may be formed by epitaxial growth on a patterned epitaxial substrate, and includes a plurality of three-dimensional patterns 102P disposed on the second surface 102A. That is to say, the common layer 10A is different from the common layer 10 shown in FIG. 1B in that the second surface 102 of the common layer 10 is a plane, and the second surface 102A of the common layer 10A has a plurality of three-dimensional patterns 102P. The conductive layer 30C is arranged between a plurality of grooves G' formed by a plurality of three-dimensional patterns 102P. Under such a situation, the contact area between the conductive layer 30C disposed on the plurality of three-dimensional patterns 102P and the second surface 102A will be larger than the contact area between the conductive layer 30 and the second surface 102 in FIG. 1B , thereby increasing the common layer The bonding yield between 10A and the conductive layer 30C is improved, and the current transfer efficiency from the circuit substrate C1 is improved.

上述導電層30、導電層30A、導電層30B以及導電層30C是不透明導電層。但是本發明不以此為限，在一些實施例中，導電層30、導電層30A、導電層30B以及導電層30C是透明導電層。The conductive layer 30, the conductive layer 30A, the conductive layer 30B, and the conductive layer 30C are opaque conductive layers. However, the present invention is not limited thereto. In some embodiments, the conductive layer 30, the conductive layer 30A, the conductive layer 30B and the conductive layer 30C are transparent conductive layers.

參照圖5，微型發光二極體顯示裝置5包括電路基板C1、磊晶結構ES以及透明導電層30T。透明導電層30T配置於共用層10的第二表面102上，且完全覆蓋第二表面102。透明導電層30T的材料可以是氧化金屬材料如氧化銦錫(ITO)或氧化鋅(ZnO)。由於透明導電層30T可透光，其不需要像前述實施例的各不透明導電層暴露出第二表面的多個子區，使得透明導電層30T與第二表面102的接觸面積最大化，大幅提高來自於電路基板C1的電流的傳遞效率。Referring to FIG. 5 , the micro light-emitting diode display device 5 includes a circuit substrate C1 , an epitaxial structure ES, and a transparent conductive layer 30T. The transparent conductive layer 30T is disposed on the second surface 102 of the common layer 10 and completely covers the second surface 102 . The material of the transparent conductive layer 30T may be an oxidized metal material such as indium tin oxide (ITO) or zinc oxide (ZnO). Since the transparent conductive layer 30T is light-transmissive, it does not need to expose multiple sub-regions of the second surface like each opaque conductive layer in the previous embodiment, so that the contact area between the transparent conductive layer 30T and the second surface 102 is maximized, greatly improving the The current transfer efficiency to the circuit substrate C1.

綜上所述，本發明實施例提供的微型發光二極體顯示裝置將導電層設置於磊晶結構的共用層上。由於導電層的電阻值小於共用層的電阻值，來自電路基板的電流能夠在導電層內傳遞。在這樣的情況下，對於與公共接地點距離不同的發光平台，相同的電位差能夠驅動相同對數的電子電洞對進行復合，可以避免微型發光二極體顯示裝置發生亮度不均勻的狀況。除此之外，相較於將導電層設置於共用層的第一表面的狀況，導電層被設置於第二表面，大幅提高了良率。To sum up, in the micro light-emitting diode display device provided by the embodiment of the present invention, the conductive layer is disposed on the common layer of the epitaxial structure. Since the resistance value of the conductive layer is smaller than the resistance value of the common layer, current from the circuit substrate can be transferred within the conductive layer. In this case, for light-emitting platforms with different distances from the common ground point, the same potential difference can drive the same number of electron-hole pairs to recombine, which can avoid uneven brightness in the micro-LED display device. In addition, compared with the situation where the conductive layer is disposed on the first surface of the common layer, the conductive layer is disposed on the second surface, which greatly improves the yield.

1、2、3、4、5:微型發光二極體顯示裝置 10、10A:共用層 10H:通孔 20:發光平台 20G:發光平台群 30、30A、30B、30B1、30B2、50、30C、30T:導電層 40:半導體墊高部 101:第一表面 102、102A:第二表面 102P:立體圖案 102S、102G:子區 120、130、140、150:接合金屬層 140E:外延段 201:第一型半導體層 202:第二型半導體層 203:發光層 220:絕緣層 A1:顯示區 A2:非顯示區 C1:電路基板 D1:第一方向 D2:第二方向 D3:第三方向 ES、ES1:磊晶結構 G、G’:凹槽 PX:顯示子像素 1, 2, 3, 4, 5: Micro light-emitting diode display device 10, 10A: Common layer 10H:Through hole 20: Luminous platform 20G: Luminous platform group 30, 30A, 30B, 30B1, 30B2, 50, 30C, 30T: conductive layer 40: Semiconductor padding part 101: First surface 102, 102A: Second surface 102P: Three-dimensional pattern 102S, 102G: sub-area 120, 130, 140, 150: bonding metal layer 140E:Extended section 201: First type semiconductor layer 202: Second type semiconductor layer 203: Luminous layer 220:Insulation layer A1:Display area A2: Non-display area C1:Circuit substrate D1: first direction D2: second direction D3: Third direction ES, ES1: epitaxial structure G, G’: Groove PX: display sub-pixel

圖1A繪示了根據本發明一實施例的微型發光二極體顯示裝置的平面示意圖。 圖1B繪示了沿圖1A所示的線I-I’的橫截面示意圖。 圖2A繪示了根據本發明一實施例的微型發光二極體顯示裝置的平面示意圖。 圖2B繪示了沿圖2A所示的線II-II’的橫截面示意圖。 圖3至圖5繪示了根據本發明實施例的微型發光二極體顯示裝置的橫截面示意圖。 FIG. 1A is a schematic plan view of a micro light-emitting diode display device according to an embodiment of the present invention. FIG. 1B illustrates a schematic cross-sectional view along line I-I' shown in FIG. 1A. FIG. 2A is a schematic plan view of a micro light-emitting diode display device according to an embodiment of the present invention. FIG. 2B illustrates a schematic cross-sectional view along line II-II' shown in FIG. 2A. 3 to 5 illustrate cross-sectional schematic diagrams of micro-LED display devices according to embodiments of the present invention.

1:微型發光二極體顯示裝置 1: Micro LED display device

10:共用層 10: Common layer

20:發光平台 20: Luminous platform

30:導電層 30:Conductive layer

40:半導體墊高部 40: Semiconductor padding part

101:第一表面 101: First surface

102:第二表面 102: Second surface

102S:子區 102S: Subarea

120、130、140、150:接合金屬層 120, 130, 140, 150: bonding metal layer

140E:外延段 140E:Extended section

201:第一型半導體層 201: First type semiconductor layer

202:第二型半導體層 202: Second type semiconductor layer

203:發光層 203: Luminous layer

220:絕緣層 220:Insulation layer

C1:電路基板 C1:Circuit substrate

D1:第一方向 D1: first direction

D2:第二方向 D2: second direction

D3:第三方向 D3: Third direction

ES:磊晶結構 ES: epitaxial structure

PX:顯示子像素 PX: display sub-pixel

Claims (11)

一種微型發光二極體顯示裝置，包括：電路基板；磊晶結構，電性連接所述電路基板，且包括：共用層；以及多個發光平台，配置於所述共用層上，其中所述共用層的厚度小於所述多個發光平台的厚度，且所述共用層具有被所述多個發光平台暴露出的第一表面，以及與所述第一表面相對的第二表面；以及第一導電層，配置於所述共用層的所述第二表面上，其中所述第一導電層在所述共用層的垂直投影重疊所述第一表面在所述共用層的垂直投影，其中所述第一導電層暴露出所述第二表面的多個子區，且所述多個子區分別對應所述多個發光平台。 A micro light-emitting diode display device, including: a circuit substrate; an epitaxial structure, electrically connected to the circuit substrate, and including: a common layer; and a plurality of light-emitting platforms configured on the common layer, wherein the common layer The thickness of the layer is less than the thickness of the plurality of light emitting platforms, and the common layer has a first surface exposed by the plurality of light emitting platforms, and a second surface opposite to the first surface; and a first conductive layer layer, configured on the second surface of the common layer, wherein a vertical projection of the first conductive layer on the common layer overlaps a vertical projection of the first surface on the common layer, wherein the first conductive layer A conductive layer exposes a plurality of sub-regions of the second surface, and the plurality of sub-regions respectively correspond to the plurality of light-emitting platforms. 如請求項1所述的微型發光二極體顯示裝置，其中所述第一導電層在所述共用層的所述垂直投影形成為第一投影，所述第一表面在所述共用層的所述垂直投影形成為第二投影，且所述第一投影與所述第二投影相重疊的部分的面積大於或等於所述第二投影的面積的0.5倍。 The micro light-emitting diode display device according to claim 1, wherein the vertical projection of the first conductive layer on the common layer forms a first projection, and the first surface is formed on all parts of the common layer. The vertical projection is formed as a second projection, and the area of the overlapping portion of the first projection and the second projection is greater than or equal to 0.5 times the area of the second projection. 如請求項2所述的微型發光二極體顯示裝置，其中所述第二投影完全落在所述第一投影中。 The micro light-emitting diode display device according to claim 2, wherein the second projection completely falls within the first projection. 如請求項1所述的微型發光二極體顯示裝置，其中所述第一導電層的厚度小於或等於所述磊晶結構的厚度。 The micro light-emitting diode display device according to claim 1, wherein the thickness of the first conductive layer is less than or equal to the thickness of the epitaxial structure. 如請求項1所述的微型發光二極體顯示裝置，其中至少部分所述多個子區在所述共用層的垂直投影小於對應的所述多個發光平台在所述共用層的垂直投影。 The micro light-emitting diode display device according to claim 1, wherein the vertical projection of at least part of the plurality of sub-regions on the common layer is smaller than the vertical projection of the corresponding plurality of light-emitting platforms on the common layer. 如請求項1所述的微型發光二極體顯示裝置，其中所述多個發光平台被分群為多個發光平台群，且所述多個子區分別對應所述多個發光平台群。 The micro light-emitting diode display device as claimed in claim 1, wherein the plurality of light-emitting platforms are grouped into a plurality of light-emitting platform groups, and the plurality of sub-regions respectively correspond to the plurality of light-emitting platform groups. 如請求項1所述的微型發光二極體顯示裝置，還包括顯示區以及非顯示區，其中所述顯示區配置有所述多個發光平台，所述非顯示區至少部分圍繞所述顯示區，且配置於所述顯示區的所述第一導電層的總面積大於配置於所述非顯示區的所述第一導電層的總面積。 The micro light-emitting diode display device according to claim 1, further comprising a display area and a non-display area, wherein the display area is configured with the plurality of light-emitting platforms, and the non-display area at least partially surrounds the display area , and the total area of the first conductive layer disposed in the display area is greater than the total area of the first conductive layer disposed in the non-display area. 如請求項1所述的微型發光二極體顯示裝置，其中所述第一導電層在遠離所述第二表面的方向上的寬度漸減。 The micro light-emitting diode display device according to claim 1, wherein the width of the first conductive layer gradually decreases in a direction away from the second surface. 如請求項1所述的微型發光二極體顯示裝置，其中所述共用層包括多個立體圖案，所述多個立體圖案配置於所述第二表面上，且所述第一導電層配置於所述多個立體圖案形成的多個凹槽間。 The micro light-emitting diode display device according to claim 1, wherein the common layer includes a plurality of three-dimensional patterns, the plurality of three-dimensional patterns are arranged on the second surface, and the first conductive layer is arranged on Between the plurality of grooves formed by the plurality of three-dimensional patterns. 如請求項1所述的微型發光二極體顯示裝置，其中所述第一導電層配置於貫穿所述共用層的通孔，以電性連接所述電路基板。 The micro light-emitting diode display device of claim 1, wherein the first conductive layer is disposed in a through hole penetrating the common layer to electrically connect the circuit substrate. 如請求項1所述的微型發光二極體顯示裝置，還包括第二導電層，配置於所述共用層的所述第一表面上。 The micro light-emitting diode display device according to claim 1, further comprising a second conductive layer disposed on the first surface of the common layer.
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