TWI830932B - How to sharpen sharpening plates and cutting blades - Google Patents
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- 238000005520 cutting process Methods 0.000 title claims abstract description 215
- 239000006061 abrasive grain Substances 0.000 claims abstract description 40
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- 239000002173 cutting fluid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/06—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels
- B24B53/07—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels by means of forming tools having a shape complementary to that to be produced, e.g. blocks, profile rolls
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
[課題]提供一種可抑制加工不良的產生的磨銳板。 [解決手段]一種磨銳板,用於使切割被加工物之切割刀片切入來進行切割刀片的磨銳,前述磨銳板具備未含有磨粒之基板、及設置於基板上而含有磨粒之磨銳構件,又,基板及磨銳構件是與切割刀片接觸而使切割刀片磨耗。[Problem] Provide a sharpening plate that can suppress the occurrence of processing defects. [Solution] A sharpening plate for sharpening a cutting blade that cuts a workpiece. The sharpening plate includes a base plate that does not contain abrasive grains, and a base plate that is provided on the base plate and contains abrasive grains. The sharpening member, the base plate, and the sharpening member are in contact with the cutting blade and wear the cutting blade.
Description
本發明是有關於一種用於進行切割被加工物之切割刀片的磨銳之磨銳板、以及使用了磨銳板之切割刀片的磨銳方法。The present invention relates to a sharpening plate for sharpening a cutting blade for cutting a workpiece and a method for sharpening a cutting blade using the sharpening plate.
在器件晶片的製造步驟中,會使用在藉由配置排列成格子狀之複數條分割預定線(切割道)所區劃出的複數個區域中各自形成有IC(積體電路,Integrated Circuit)、LSI(大型積體電路,Large Scale Integration)等的器件之晶圓。藉由沿著分割預定線分割此晶圓,可獲得各自具備器件的複數個器件晶片。器件晶片可搭載於行動電話、個人電腦等各種電子機器上。In the manufacturing process of device wafers, ICs (Integrated Circuits) and LSIs are formed in a plurality of areas divided by a plurality of planned division lines (dicing lanes) arranged in a grid pattern. (Large Scale Integration) and other device wafers. By dividing the wafer along the planned dividing lines, a plurality of device wafers each having a device can be obtained. Device chips can be mounted on various electronic devices such as mobile phones and personal computers.
在晶圓的分割上是使用切割裝置,前述切割裝置具備保持晶圓的工作夾台、及切割晶圓的切割單元。在此切割裝置的切割單元中,裝設有用於切割晶圓的環狀的切割刀片。切割刀片是藉由例如以金屬所形成的黏結材來固定以鑽石所形成的磨粒而形成(參照專利文獻1)。藉由使已裝設於切割單元的切割刀片旋轉,並切入被工作夾台所保持的晶圓,可切割、分割晶圓。A dicing device is used to divide the wafer. The dicing device includes a work chuck that holds the wafer, and a dicing unit that cuts the wafer. The cutting unit of this cutting device is equipped with an annular cutting blade for cutting the wafer. The cutting blade is formed by fixing abrasive grains made of diamond to a bonding material made of metal, for example (see Patent Document 1). The wafer can be cut and divided by rotating the dicing blade installed in the dicing unit and cutting into the wafer held by the work chuck.
在藉由切割刀片加工晶圓之前,會實施使切割刀片的前端部磨耗,而使磨粒適度地露出於黏結材之磨銳。在此磨銳的步驟中,是重複進行以下作業:使切割刀片切入以和成為加工對象之晶圓相同材質構成的磨銳用的晶圓(假晶圓),並以線狀的形式切割假晶圓。藉由進行此磨銳,可使黏結材磨耗且使磨粒適度地從黏結材突出,而使切割刀片成為適合於晶圓的切割之狀態。Before processing the wafer with the dicing blade, the front end of the dicing blade is worn so that the abrasive grains are appropriately exposed to the bonding material. In this sharpening step, the following operation is repeated: the cutting blade is cut into a sharpening wafer (dummy wafer) made of the same material as the wafer to be processed, and the dummy wafer is cut in a linear manner. wafer. By performing this sharpening, the bonding material can be worn and the abrasive grains can appropriately protrude from the bonding material, so that the dicing blade can be in a state suitable for cutting the wafer.
然而,於使用假晶圓來進行磨銳時,必須讓切割刀片對假晶圓切入多數次(例如400次左右),在磨銳作業上較耗工費時。因此,當實施磨銳作業時,會導致由切割裝置所進行之晶圓的加工長時間停滯,而有加工效率降低的問題。However, when using a dummy wafer for sharpening, the cutting blade must be cut into the dummy wafer many times (for example, about 400 times), which makes the sharpening operation more labor-intensive and time-consuming. Therefore, when the sharpening operation is performed, the processing of the wafer by the cutting device will be suspended for a long time, resulting in a problem of reduced processing efficiency.
於是,已有以下的手法被提出:藉由讓切割刀片切入含有磨粒之磨銳用的板(磨銳板),來進行切割刀片的磨銳(參照專利文獻2)。和使用假晶圓的情況相比較,若使用此磨銳用板,切割刀片的磨耗量會增大。藉此,可減少在切割刀片的磨銳上所需要的切入次數,而變得可大幅地減少磨銳作業所需要的步驟數及時間。 先前技術文獻 專利文獻Therefore, a method of sharpening the cutting blade by cutting the cutting blade into a sharpening plate (sharpening plate) containing abrasive grains has been proposed (see Patent Document 2). Compared with the case of using a dummy wafer, if this sharpening plate is used, the wear of the cutting blade will increase. This can reduce the number of cuts required for sharpening the cutting blade, thereby significantly reducing the number of steps and time required for the sharpening operation. Prior technical literature patent documents
專利文獻1:日本特開2000-87282號公報 專利文獻2:日本特開2011-11280號公報Patent Document 1: Japanese Patent Application Publication No. 2000-87282 Patent Document 2: Japanese Patent Application Publication No. 2011-11280
發明欲解決之課題The problem to be solved by the invention
根據上述,可以藉由將包含磨粒之磨銳板使用於切割刀片的磨銳,而謀求磨銳作業的效率化。然而,當將切割刀片切入此磨銳板時,會在切割刀片的前端部劇烈地摩耗黏結材,而容易使磨粒過度地從黏結材突出。並且,若以磨粒的突出量較大的狀態的切割刀片來切割晶圓,會有以下情形:在晶圓產生缺損(破裂)等的加工不良,而使器件晶片的品質降低。According to the above, by using the sharpening plate containing abrasive grains for sharpening the cutting blade, the efficiency of the sharpening operation can be achieved. However, when the cutting blade is cut into the sharpening plate, the bonding material will be severely worn at the front end of the cutting blade, and the abrasive grains will easily protrude from the bonding material excessively. Furthermore, if a wafer is cut using a dicing blade with a large protrusion of abrasive grains, processing defects such as defects (cracks) may occur in the wafer, resulting in a decrease in the quality of the device wafer.
本發明是有鑒於所述的問題而作成的發明,其目的在於提供一種可抑制加工不良的產生的磨銳板、以及使用了該磨銳板的切割刀片的磨銳方法。 用以解決課題之手段The present invention was made in view of the above-mentioned problems, and an object thereof is to provide a sharpening plate that can suppress the occurrence of processing defects, and a method for sharpening a cutting blade using the sharpening plate. means to solve problems
根據本發明的一個態樣,可提供一種磨銳板,前述磨銳板是用於使切割被加工物之切割刀片切入來進行該切割刀片的磨銳,並具備未含有磨粒之基板、及設置於該基板上而含有磨粒之磨銳構件,又,該基板及該磨銳構件是與該切割刀片接觸而使該切割刀片磨耗。According to one aspect of the present invention, there is provided a sharpening plate that is used to sharpen a cutting blade that cuts a workpiece by cutting the cutting blade, and has a base plate that does not contain abrasive grains, and A sharpening member containing abrasive grains is provided on the base plate, and the base plate and the sharpening member are in contact with the cutting blade to wear the cutting blade.
又,較佳的是,該基板與該被加工物為相同材質。又,較佳的是,該基板的厚度為0.2mm以上且1mm以下,該磨銳構件的厚度為0.05mm以上且1mm以下。Furthermore, preferably, the substrate and the workpiece are made of the same material. Moreover, it is preferable that the thickness of the base plate is 0.2 mm or more and 1 mm or less, and the thickness of the sharpening member is 0.05 mm or more and 1 mm or less.
又,根據本發明的其他的一個態樣,可提供一種切割刀片的磨銳方法,前述磨銳方法是使用磨銳板來進行切割被加工物之切割刀片的磨銳,前述磨銳板具備未含有磨粒之基板、及設置於該基板上而含有磨粒之磨銳構件,前述切割刀片的磨銳方法具備以下步驟: 保持步驟,藉由切割裝置的工作夾台來保持該磨銳板的該基板側;及 磨銳步驟,使該切割刀片切入該磨銳板的該磨銳構件側,而以該切割刀片將該基板和該磨銳構件一起切割。 發明效果Furthermore, according to another aspect of the present invention, a method for sharpening a cutting blade can be provided. The sharpening method uses a sharpening plate to sharpen a cutting blade for cutting a workpiece, and the sharpening plate has an unparalleled ability to sharpen a cutting blade. A base plate containing abrasive grains, and a sharpening member provided on the base plate and containing abrasive grains. The aforementioned method for sharpening a cutting blade includes the following steps: a holding step of holding the base plate side of the sharpened plate by the work clamp of the cutting device; and In the sharpening step, the cutting blade is cut into the sharpening member side of the sharpening plate, and the substrate and the sharpening member are cut together with the cutting blade. Invention effect
根據本發明的一個態樣的磨銳板具備未含有磨粒之基板、及含有磨粒之磨銳構件。並且,可以藉由以切割刀片將基板與磨銳構件一起切割,來實施切割刀片的磨銳。此時,若讓切割刀片以到達基板的方式來切入磨銳板,即可緩和切割刀片的前端部的磨耗。藉此,可防止切割刀片之過量的磨銳,且可抑制藉由切割刀片加工被加工物時的加工不良的產生。A sharpening plate according to one aspect of the present invention includes a base plate that does not contain abrasive grains, and a sharpening member that contains abrasive grains. Furthermore, sharpening of the cutting blade may be performed by cutting the substrate together with the sharpening member with the cutting blade. At this time, if the cutting blade is allowed to cut into the sharpening plate so as to reach the substrate, the wear of the front end of the cutting blade can be alleviated. Thereby, excessive sharpening of the cutting blade can be prevented, and the occurrence of processing defects when the workpiece is processed by the cutting blade can be suppressed.
用以實施發明之形態Form used to implement the invention
以下,參照附加圖式來說明本發明的實施形態。首先,針對本實施形態之磨銳板的構成例作說明。本實施形態之磨銳板是使用在切割被加工物之環狀的切割刀片的磨銳(修整)上。Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. First, a configuration example of the sharpening plate according to this embodiment will be described. The sharpening plate of this embodiment is used for sharpening (dressing) an annular cutting blade for cutting a workpiece.
切割刀片是切入被加工物來切割被加工物的加工工具,且是藉由以黏結材來固定以鑽石等所形成之磨粒而形成。例如,作為切割刀片,可使用具備以鎳鍍敷等方式而固定有磨粒之切刃的電鑄輪轂型刀片、或由藉由金屬、陶瓷、樹脂等所構成之黏結材而固定有磨粒之切刃所構成之環狀的刀片(墊圈型刀片)。The cutting blade is a processing tool that cuts into the workpiece to cut the workpiece, and is formed by fixing abrasive grains made of diamond or the like with a bonding material. For example, as a cutting blade, an electroformed hub-type blade having a cutting edge with abrasive grains fixed by nickel plating or the like, or a bonding material made of metal, ceramic, resin, etc., with abrasive grains fixed on it, can be used. A ring-shaped blade (washer-type blade) composed of cutting edges.
作為被切割刀片所切割的被加工物的例子,可列舉例如矽晶圓,前述矽晶圓在藉由配置排列成格子狀的複數條分割預定線(切割道)所區劃出的複數個區域中各自具備IC(積體電路,Integrated Circuit)、LSI(大型積體電路,Large Scale Integration)等的器件。可藉由將此矽晶圓以切割刀片來切割,並沿著分割預定線分割,而製造各自具備器件的複數個器件晶片。Examples of the workpiece to be cut by the dicing blade include a silicon wafer in a plurality of areas divided by a plurality of planned division lines (dicing lanes) arranged in a grid pattern. Each has devices such as IC (Integrated Circuit) and LSI (Large Scale Integration). This silicon wafer can be cut with a dicing blade and divided along planned division lines to produce a plurality of device wafers each having a device.
但是,對被加工物的材質、形狀、構造、大小等並無限制。例如,被加工物亦可為以矽以外的半導體(砷化鎵(GaAs)、磷化銦(InP)、氮化鎵(GaN)、碳化矽(SiC)等)、玻璃、陶瓷、樹脂、金屬等材料所構成之任意的形狀及大小的晶圓。又,對形成於被加工物之器件的種類、數量、形狀、構造、大小、配置等也無限制,在被加工物上亦可未形成有器件。又,被加工物亦可為CSP(晶片尺寸封裝,Chip Size Package)基板、QFN(方形扁平無引線封裝,Quad Flat Non-leaded package)基板等的封裝基板。However, there are no restrictions on the material, shape, structure, size, etc. of the workpiece. For example, the workpiece may be semiconductors other than silicon (gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), silicon carbide (SiC), etc.), glass, ceramics, resins, metals Wafers of any shape and size made of other materials. In addition, there are no limitations on the type, number, shape, structure, size, arrangement, etc. of the devices formed on the workpiece, and no devices may be formed on the workpiece. In addition, the workpiece may be a packaging substrate such as a CSP (Chip Size Package) substrate or a QFN (Quad Flat Non-leaded package) substrate.
當一邊使切割刀片旋轉一邊使切割刀片之前端部切入磨銳板時,會在接觸於磨銳板的切割刀片的前端部磨耗黏結材,使磨粒從黏結材的突出量變大。如此進行來進行切割刀片的磨銳,使切割刀片的鋒利程度提升。When the front end of the cutting blade cuts into the sharpening plate while the cutting blade is rotated, the bonding material is worn at the front end of the cutting blade in contact with the sharpening plate, so that the protrusion amount of the abrasive grains from the bonding material becomes larger. In this way, the cutting blade is sharpened to improve the sharpness of the cutting blade.
圖1(A)是顯示磨銳板11的立體圖,圖1(B)是顯示磨銳板11的截面圖。磨銳板11具備板狀之基板(第1磨銳層)13、及設於基板13上的板狀之磨銳構件(第2磨銳層)15。基板13與磨銳構件15是以互相接觸的方式在磨銳板11的厚度方向上重疊。再者,在圖1(A)以及圖1(B)中雖然顯示有基板13與磨銳構件15各自在平面視角下為矩形的例子,但對於基板13以及磨銳構件15的形狀並無限制。FIG. 1(A) is a perspective view showing the
基板13是未含有磨粒的板狀的構件,並具備正面(第1面)13a及背面(第2面)13b。例如基板13是以和被切割刀片所切割之預定的被加工物相同的材質來構成。在被切割刀片所切割之被加工物為矽晶圓的情況下,可以使用以矽所構成之板狀的構件來作為基板13。The
於基板13的正面13a上設有磨銳構件15。磨銳構件15是含有磨粒之板狀的構件,並具備正面(第1面)15a及背面(第2面)15b。例如磨銳構件15是以酚醛樹脂、環氧樹脂等的樹脂所構成,且含有以碳化矽(SiC)等所構成的磨粒。磨銳構件15是以背面15b側與基板13的正面13a側相接的方式積層於基板13上。A sharpening
磨銳構件15可在與基板13另外獨立而形成之後,和基板13貼合,亦可直接形成在基板13上。例如,磨銳構件15可藉由以下作法來形成:使以碳化矽(SiC)等所構成的磨粒含浸於酚醛樹脂或環氧樹脂等的樹脂後,將此樹脂成形為板狀,並以預定的溫度(例如150℃以上且約200℃以下)來燒成。如此所形成的磨銳構件15可藉由例如接著劑來和基板13接合。The sharpening
又,磨銳構件15亦可藉由網版印刷等而直接形成於基板13的正面13a上。若使用網版印刷,會變得容易在基板13上形成薄的磨銳構件15(例如厚度100μm以下)。In addition, the sharpening
又,亦可藉由將含浸有磨粒的樹脂塗佈在基板13的正面13a上之後,使用刮刀等工具將此樹脂一邊壓附於基板13的正面13a一邊擴展,而在基板13的正面13a上形成厚度大致均一的樹脂層。之後,藉由對此樹脂層進行燒成,而在基板13上形成磨銳構件15。Alternatively, the resin impregnated with abrasive grains may be applied to the
再者,對基板13及磨銳構件15的厚度並無限制。例如,基板13的厚度可以設為0.2mm以上且1mm以下。又,磨銳構件15的厚度可以設為0.05mm以上且1mm以下。基板13及磨銳構件15的厚度的具體值,可如後述地因應於磨銳的條件來適當設定。Furthermore, the thickness of the
又,對於包含在磨銳構件15的磨粒的含有量、粒徑等也無限制。例如以重量比計,在磨銳構件15中含有55%以上且65%以下之比率的磨粒。又,在磨銳構件15中所包含的磨粒的粒徑可因應於進行磨銳的切割刀片的材質、厚度、直徑等來適當設定。例如,於磨銳構件15中可含有平均粒徑為0.1μm以上且50μm以下的磨粒。In addition, the content, particle size, etc. of the abrasive grains contained in the sharpening
可使用上述之磨銳板11來進行切割刀片的磨銳。進行切割刀片的磨銳之時,首先是藉由環狀的框架來支撐磨銳板11。圖2是顯示被框架19所支撐之磨銳板11的立體圖。The above-mentioned sharpening
於磨銳板11的背面側(基板13的背面13b側)貼附有圓形的膠帶17。膠帶17具有可覆蓋基板13的背面13b側的整體之大小,且可將基板13的背面13b側貼附在此膠帶17的中央部。A
再者,膠帶17的材料並無限制。例如膠帶17具備圓形的基材、及設置於基材上的黏著層(糊層)。基材是以聚烯烴、聚氯乙烯、聚對苯二甲酸乙二酯等樹脂所構成,黏著層是以環氧系、丙烯酸系、或橡膠系的接著劑等所構成。又,黏著層亦可是會因紫外線的照射而硬化之紫外線硬化型的樹脂。Furthermore, the material of the
膠帶17的外周部是貼附於環狀的框架19,前述環狀的框架19是以金屬等所構成且於中央部具備圓形的開口19a。再者,開口19a的直徑比磨銳板11的外接圓的直徑更大,而可將磨銳板11配置在開口19a的內側。當將膠帶17貼附於磨銳板11及框架19後,磨銳板11即透過膠帶17而被框架19所支撐。The outer peripheral portion of the
可藉由使切割刀片切入被框架19所支撐的磨銳板11,而進行切割刀片之磨銳。此種切割刀片的磨銳是使用切割裝置來實施。圖3是顯示切割裝置2的立體圖。The cutting blade can be sharpened by cutting the cutting blade into a sharpening
切割裝置2具備保持被加工物或磨銳板11之工作夾台(保持工作台)4。工作夾台4之上表面是形成為與X軸方向(加工進給方向、前後方向、第1水平方向)以及Y軸方向(分度進給方向、左右方向、第2水平方向)大致平行,而構成保持被加工物或磨銳板11的保持面。此保持面是透過形成在工作夾台4的內部的吸引路(未圖示)而連接到噴射器(ejector)等的吸引源(未圖示)。The
工作夾台4的周圍設置有可將支撐磨銳板11的框架19把持並固定的複數個夾具(未圖示)。又,工作夾台4是連接於移動機構(未圖示)與旋轉機構(未圖示),前述移動機構是使工作夾台4沿著X軸方向移動之機構,前述旋轉機構是使工作夾台4以繞著大致平行於Z軸方向(鉛直方向、上下方向)的旋轉軸的方式旋轉之機構。A plurality of jigs (not shown) for holding and fixing the
工作夾台4的上方配置有切割被加工物或磨銳板11的切割單元6。切割單元6具備圓筒狀的殼體8,在此殼體8內容置有與Y軸方向大致平行地配置之圓筒狀的主軸(未圖示)。A
主軸的前端部(一端部)是露出於殼體8的外部,且可在此前端部裝設環狀的切割刀片10。又,在主軸的基端部(另一端部)連接有馬達等的旋轉驅動源。已裝設於主軸的前端部的切割刀片10是藉由從旋轉驅動源透過主軸所傳達的動力而旋轉。The front end (one end) of the spindle is exposed outside the housing 8, and an
又,當將切割刀片10裝設於主軸的前端部時,切割刀片10會被固定於殼體8的刀片蓋12所覆蓋。刀片蓋12具備連接於供給純水等的切割液的管件(未圖示)的連接部14、及連接於連接部14且各自配置於切割刀片10的兩側面側(正面側、背面側)的一對噴嘴16。於一對噴嘴16分別形成有朝向切割刀片10開口的噴射口(未圖示)。Furthermore, when the
當對連接部14供給切割液時,即從一對噴嘴16的噴射口朝向切割刀片10的兩側面(正面、背面)噴射切割液。藉由此切割液,可將切割刀片10、與被工作夾台4所保持的被加工物或磨銳板11冷卻,並且將因切割加工而產生的雜屑(切割屑)沖洗掉。When the cutting fluid is supplied to the
又,於切割單元6連接有使切割單元6移動之移動機構(未圖示)。此移動機構是使切割單元6沿著Y軸方向移動,並且使其沿著Z軸方向升降。藉此,可控制切割刀片10的Y軸方向及Z軸方向上的位置。Furthermore, a moving mechanism (not shown) for moving the
使用切割裝置2來進行切割刀片10的磨銳時,首先是藉由切割裝置2的工作夾台4來保持磨銳板11(保持步驟)。具體地說,是以磨銳板11的正面側(磨銳構件15的正面15a側)露出於上方且磨銳板11的背面側(基板13的背面13b側)相向於工作夾台4之保持面的方式,來隔著膠帶17將磨銳板11配置於工作夾台4上。又,藉由設置於工作夾台4周圍的複數個夾具(未圖示)來將支撐磨銳板11的框架19固定。When the
在這個狀態下,當使吸引源的負壓作用於工作夾台4之保持面時,磨銳板11即隔著膠帶17被工作夾台4所吸引。藉此,可藉由工作夾台4保持磨銳板11的基板13側。In this state, when the negative pressure of the suction source acts on the holding surface of the work chuck 4, the sharpening
接著,使切割刀片10切入磨銳板11的磨銳構件15側,而以切割刀片10將基板13和磨銳構件15一起切割(磨銳步驟)。藉由使切割刀片10切入磨銳板11,可磨耗切割刀片10的前端部,而進行切割刀片10的磨銳。Next, the
在磨銳步驟中,首先是使工作夾台4旋轉,並將磨銳板11的一邊的長度方向對齊於X軸方向或Y軸方向。又,將工作夾台4以及切割單元6的位置調整成切割刀片10與磨銳板11在平面視角下不重疊,且在正面視角下重疊。In the sharpening step, the work chuck 4 is first rotated and the length direction of one side of the sharpening
進一步地,將切割單元6的Z軸方向上的位置調整成讓切割刀片10的前端部切入到磨銳板11的基板13。具體而言,是將切割單元6的高度調整成:將切割刀片10的下端10a(參照圖4)配置在比基板13的正面13a更下方,且比基板13的背面13b更上方。Furthermore, the position in the Z-axis direction of the
然後,一邊使切割刀片10旋轉一邊使工作夾台4在X軸方向上移動,而使磨銳板11與切割刀片10相對地移動(加工進給)。藉此,使切割刀片10切入磨銳板11的磨銳構件15側。其結果,磨銳板11的基板13以及磨銳構件15會接觸於切割刀片10而使切割刀片10磨耗。又,於磨銳板11的磨銳構件15側會形成線狀的切割溝11a(參照圖3)。Then, while rotating the
例如,一邊使切割刀片10朝箭頭A所示之方向旋轉,一邊使工作夾台4朝箭頭B所示之方向(後方)移動。在此情況下,工作夾台4與切割刀片10相對地移動成:切割刀片10的下端之移動方向與工作夾台4的移動方向為一致。並且,進行使切割刀片10從磨銳板11的正面側(磨銳構件15側)朝向背面側(基板13側)切入之所謂的順切。For example, while the
圖4是顯示切割刀片10切入磨銳板11之情形的截面圖。切割刀片10是以下端10a到達基板13之切入深度D,來切入磨銳板11的磨銳構件15側。再者,切割刀片10對磨銳板11的切入深度D相當於磨銳板11的正面(磨銳構件15的正面15a)與切割刀片10的下端10a的高度之差。FIG. 4 is a cross-sectional view showing the
又,切割刀片10對磨銳板11的切入深度D相當於切割刀片10對磨銳構件15的切入深度D1
、與切割刀片10對基板13的切入深度D2
之和。切入深度D1
相當於磨銳構件15的厚度,切入深度D2
相當於基板13的正面13a與切割刀片10的下端10a的高度之差。In addition, the cutting depth D of the
當將切割刀片10切入磨銳板11時,切割刀片10會從正面15a側朝向背面15b側將磨銳構件15切割並切斷,並且切割基板13的正面13a側的一部分。其結果,會在切割刀片10的前端部產生黏結材的磨耗。When the
之後,使切割單元6在Y軸方向上移動(分度進給),進一步使切割刀片10切入磨銳板11之未形成有切割溝11a的區域。然後,重複同樣的順序,直到磨粒在切割刀片10的前端部充分地從黏結材突出為止。藉此,可進行切割刀片10的磨銳,而提升切割刀片10的鋒利程度。Thereafter, the
在此,基板13並未含有磨粒,磨銳構件15則含有磨粒。因此,基板13會比磨銳構件15更難以產生切割刀片10的磨耗。並且,當將切割刀片10切入磨銳板11時,切割刀片10的前端部會與磨銳構件15接觸而磨耗,並且與基板13接觸而稍微磨耗。Here, the
像這樣,若在磨銳構件15的下方配置未含有磨粒的基板13,並使切割刀片10以到達基板13的方式來切入時,和使切割刀片10僅切入磨銳構件15的情況相比較,可緩和切割刀片10的前端部的磨耗。藉此,可防止切割刀片10之前端部中的黏結材的過量的磨耗、及磨粒的過量的突出。其結果,可以防止以下情形:在之後以切割刀片10切割被加工物時,在被加工物產生缺損(破裂)等的加工不良。In this way, when the
另一方面,切割刀片10的磨耗主要是藉由和含有磨粒的磨銳構件15的接觸而產生。因此,和如以往地使切割刀片10切入材質和被加工物相同且未含有磨粒的磨銳用的晶圓(假晶圓)的情況相比較,可促進切割刀片10的磨耗。其結果,可減少切割刀片10的磨銳所需要的步驟數及時間。On the other hand, the wear of the
再者,基板13宜利用和之後被切割刀片10所加工的被加工物相同的材質來構成。例如,在被加工物為矽晶圓的情況下,宜使用以矽所構成之基板13。這種情況下,切割刀片10的前端部會與材質和被加工物相同的基板13接觸而磨耗。其結果,可將切割刀片10的前端部中的磨粒的突出量配合被加工物的材質來最佳化。藉此,以讓切割刀片10適應於被加工物的切割的方式來進行磨耗,而使切割刀片10成為更適合於被加工物的加工之狀態。Furthermore, the
但是,基板13的材質與被加工物的材質亦可不同。在這種情況下,基板13的材質宜以如下的方式來選擇:依據被加工物的性質(脆性、延展性、韌性等),在基板13與被加工物中使磨耗切割刀片10之效果變得同等。例如,在被加工物為砷化鎵(GaAs)晶圓的情況下,亦可使用以矽所構成的基板13。However, the material of the
圖4所示之切入深度D及切入深度D2
之值,是設定成可因應於切割刀片10的材質、厚度、直徑、磨銳板11的材質等,來合宜地實施切割刀片10的磨銳。並且,依據此切入深度D與切入深度D2
之值,可設定磨銳構件15的厚度(對應於切入深度D1
)。例如,在將切入深度D設定為0.25~0.3mm左右,將切入深度D2
設定為0.05~0.1mm左右的情況下,是將磨銳構件15的厚度設定為0.2mm左右。The values of the cutting depth D and the cutting depth D 2 shown in FIG. 4 are set so that the
基板13的厚度只要是比切入深度D2
更大的值即可,並無限制。但是,基板13的厚度宜設定成使基板13的剛性變高到一定程度,而變得難以在磨銳板11產生撓曲。例如,可將基板13的厚度設定為磨銳構件15的厚度以上,且較佳是設定為磨銳構件15的厚度的3倍以上。又,亦可在基板13的背面13b側固定有支撐磨銳板11的支持構件,來提高磨銳板11的剛性。The thickness of the
如以上所述,本實施形態之磨銳板11具備未含有磨粒之基板13、及含有磨粒之磨銳構件15。並且,可以藉由以切割刀片10將基板13與磨銳構件15一起切割,來實施切割刀片10的磨銳。此時,若讓切割刀片10以到達基板13的方式來切入磨銳板11,即可緩和切割刀片10的前端部的磨耗。藉此,可防止切割刀片10之過量的磨銳,且可抑制藉由切割刀片10加工被加工物時之加工不良的產生。As described above, the sharpening
再者,磨銳前的切割刀片10是成為在其前端部幾乎未露出有磨粒的狀態。若讓此狀態的切割刀片10切入磨銳板11,施加於磨銳板11及切割刀片10的壓力(加工負荷)會變大,而有在磨銳板11及切割刀片10產生破裂、缺損等之疑慮。因此,在磨銳的前半段的加工進給速度宜設定得比在磨銳的後半段的加工進給速度更小。In addition, the
例如,首先使切割刀片10以預定的旋轉數(例如30000rpm)旋轉,並且使工作夾台4以第1加工進給速度(例如10mm/s)移動,來進行第1次的切割(第1切割步驟)。之後,在照樣維持切割刀片10的旋轉數的狀態下,使工作夾台4以比第1加工進給速度更快的第2加工進給速度(例如40mm/s)移動,來進行第2次以後的切割(第2切割步驟)。For example, the
像這樣,藉由將至少第1次的切割中的工作夾台4的加工進給速度設定得較小,可以減少加工負荷,並防止在磨銳板11及切割刀片10產生破裂、缺損等之情形。再者,對第1切割步驟及第2切割步驟中的切割次數並無限制。例如,可將第1切割步驟中的切割次數設定為1次,並將第2切割步驟中的切割次數設定為10次以上且50次以下左右。In this way, by setting the processing feed speed of the work chuck 4 low during at least the first cutting, it is possible to reduce the processing load and prevent cracks, chips, etc. from occurring in the sharpening
又,亦可將第1切割步驟中的切割刀片10對磨銳板11的切入深度設定得比第2切割步驟中的切割刀片10對磨銳板11的切入深度更小。在此情況下,也可以減少第1切割步驟中的加工負荷。Moreover, the cutting depth of the
另外,上述實施形態之構造、方法等,只要在不脫離本發明的目的之範圍內,均可適當變更而實施。In addition, the structure, method, etc. of the above-mentioned embodiment can be suitably changed and implemented within the range which does not deviate from the object of this invention.
2:切割裝置
4:工作夾台(保持工作台)
6:切割單元
8:殼體
10:切割刀片
10a:下端
11:磨銳板
11a:切割溝
12:刀片蓋
13:基板(第1磨銳層)
13a:正面(第1面)
13b:背面(第2面)
14:連接部
15:磨銳構件(第2磨銳層)
15a:正面(第1面)
15b:背面(第2面)
16:噴嘴
17:膠帶
19:框架
19a:開口
A,B:箭頭
D,D1,D2:切入深度
X,Y,Z:方向2: Cutting device 4: Work clamp (holding table) 6: Cutting unit 8: Housing 10:
圖1(A)是顯示磨銳板的立體圖,圖1(B)是顯示磨銳板的截面圖。 圖2是顯示被框架所支撐之磨銳板的立體圖。 圖3是顯示切割裝置的立體圖。 圖4是顯示使切割刀片切入磨銳板之情形的截面圖。FIG. 1(A) is a perspective view showing the sharpening plate, and FIG. 1(B) is a cross-sectional view showing the sharpening plate. Figure 2 is a perspective view showing the sharpening plate supported by the frame. Figure 3 is a perspective view showing the cutting device. Fig. 4 is a cross-sectional view showing a state in which the cutting blade is cut into the sharpening plate.
11:磨銳板 11:sharpening plate
13:基板(第1磨銳層) 13:Substrate (1st sharpening layer)
13a:正面(第1面) 13a: Front (1st side)
13b:背面(第2面) 13b: Back (2nd side)
15:磨銳構件(第2磨銳層) 15: Sharpening component (2nd sharpening layer)
15a:正面(第1面) 15a: Front (1st side)
15b:背面(第2面) 15b: Back (2nd side)
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Citations (2)
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JP2005251909A (en) * | 2004-03-03 | 2005-09-15 | Tokyo Seimitsu Co Ltd | Dressing method |
JP2012187692A (en) * | 2011-03-14 | 2012-10-04 | Disco Corp | Dressing material and dressing method |
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JP3992168B2 (en) | 1998-09-17 | 2007-10-17 | 株式会社ディスコ | Electrodeposition blade manufacturing method |
CN101844330A (en) * | 2009-03-24 | 2010-09-29 | 宋健民 | Polishing pad trimmer |
JP5541657B2 (en) | 2009-07-01 | 2014-07-09 | 株式会社ディスコ | Sharpening board |
JP2012187693A (en) * | 2011-03-14 | 2012-10-04 | Disco Corp | Dressing material and dressing method |
JP6246566B2 (en) * | 2013-11-11 | 2017-12-13 | 株式会社ディスコ | Dressing method |
JP6967386B2 (en) * | 2017-07-12 | 2021-11-17 | 株式会社ディスコ | Dressing method |
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JP2005251909A (en) * | 2004-03-03 | 2005-09-15 | Tokyo Seimitsu Co Ltd | Dressing method |
JP2012187692A (en) * | 2011-03-14 | 2012-10-04 | Disco Corp | Dressing material and dressing method |
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