TWI829862B - Photomask repairing method, photomask repairing device, method of manufacturing a photomask with a pellicle and method of manufacturing a display device - Google Patents
Photomask repairing method, photomask repairing device, method of manufacturing a photomask with a pellicle and method of manufacturing a display device Download PDFInfo
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- TWI829862B TWI829862B TW109104654A TW109104654A TWI829862B TW I829862 B TWI829862 B TW I829862B TW 109104654 A TW109104654 A TW 109104654A TW 109104654 A TW109104654 A TW 109104654A TW I829862 B TWI829862 B TW I829862B
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 230000007547 defect Effects 0.000 claims abstract description 46
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- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 230000001681 protective effect Effects 0.000 claims description 80
- 239000002994 raw material Substances 0.000 claims description 79
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 149
- 239000010408 film Substances 0.000 description 125
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 239000012528 membrane Substances 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000029777 axis specification Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical compound [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
本發明係關於一種光罩之修正方法、光罩之修正裝置、附護膜之光罩之製造方法及顯示裝置之製造方法。The present invention relates to a method for correcting a photomask, a device for correcting a photomask, a method for manufacturing a photomask with a protective film, and a method for manufacturing a display device.
作為光罩之製造方法，已知有對在透明基板上形成有至少1個薄膜之光罩基板應用光微影法形成轉印用圖案之方法。近年來，顯示裝置用光罩之圖案尺寸存在微細化之動向。另一方面，光罩之製造過程中，因薄膜之圖案化不充分或異物之附著等，難以完全避免轉印用圖案之缺陷。先前，作為光罩之缺陷之修正方法，已知有雷射CVD(Chemical Vapor Deposition，化學氣相沈積)法(參照專利文獻1)。又，為了抑制異物附著於已製成之光罩，存在視需要於形成有光罩之轉印用圖案之面之側，貼附被稱為護膜之構件之情形。該護膜例如記載於專利文獻2。 [先前技術文獻] [專利文獻]As a method of manufacturing a photomask, a method is known in which a photolithography method is used to form a transfer pattern on a photomask substrate in which at least one thin film is formed on a transparent substrate. In recent years, there has been a trend toward miniaturization in the pattern size of photomasks for display devices. On the other hand, during the manufacturing process of the photomask, it is difficult to completely avoid defects in the transfer pattern due to insufficient patterning of the film or the adhesion of foreign matter. Previously, a laser CVD (Chemical Vapor Deposition) method has been known as a method for correcting defects in a photomask (see Patent Document 1). In order to prevent foreign matter from adhering to the completed photomask, a member called a protective film may be attached to the side of the surface on which the transfer pattern of the photomask is formed, if necessary. This protective film is described in Patent Document 2, for example. [Prior technical literature] [Patent Document]
[專利文獻1]日本專利特開平2-140744號公報 [專利文獻2]日本專利特開平9-68792號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2-140744 [Patent Document 2] Japanese Patent Application Publication No. 9-68792
[發明所欲解決之問題][Problem to be solved by the invention]
然而，專利文獻1、2均未揭示修正貼附有護膜之光罩之缺陷之方法。於貼附護膜後需要修正之情形時，需要從光罩拆除護膜再進行修正，於完成修正後將新護膜貼附於光罩。因此，生產性之降低或成本之增加便成為問題。However, neither Patent Document 1 nor Patent Document 2 discloses a method for correcting defects in a photomask to which a protective film is attached. If correction is required after the protective film is attached, the protective film needs to be removed from the photomask and then corrected. After the correction is completed, a new protective film must be attached to the photomask. Therefore, a decrease in productivity or an increase in cost become problems.
因此，本發明之目的在於提供一種無需從光罩拆除護膜便可修正轉印用圖案之缺陷的光罩之修正方法。 本發明之目的還在於提供一種光罩之修正裝置、附護膜之光罩之製造方法及顯示裝置之製造方法。 [解決問題之技術手段]Therefore, an object of the present invention is to provide a photomask correction method that can correct defects in a transfer pattern without removing the protective film from the photomask. Another object of the present invention is to provide a correction device for a photomask, a method for manufacturing a photomask with a protective film, and a method for manufacturing a display device. [Technical means to solve problems]
(第1態樣) 根據本發明之第1態樣，提供一種光罩之修正方法， 其係修正於透明基板之主表面具備轉印用圖案之光罩的上述轉印用圖案產生之缺陷者， 其具有成膜步驟，該成膜步驟於上述光罩貼附有護膜之狀態下，向由上述光罩與上述護膜形成之護膜空間導入原料氣體，並穿過上述護膜所具有之護膜薄膜對缺陷部位照射雷射光而使上述原料氣體發生反應，藉此使修正膜沈積於上述缺陷部位。(1st aspect) According to a first aspect of the present invention, a method for correcting a photomask is provided. It is to correct the defects caused by the above-mentioned transfer pattern of the photomask having the transfer pattern on the main surface of the transparent substrate, It has a film-forming step. In the film-forming step, when the photomask is attached with a protective film, a raw material gas is introduced into the film space formed by the photomask and the protective film, and passes through the space of the protective film. The pellicle film irradiates the defective part with laser light to cause the raw material gas to react, thereby depositing a correction film on the defective part.
(第2態樣) 根據本發明之第2態樣， 提供如第1態樣記載之光罩之修正方法， 其中於上述成膜步驟中，上述原料氣體從設置於上述護膜所具有之護膜框之護膜通氣口導入。(2nd form) According to the second aspect of the present invention, Provide the correction method of the photomask as described in the first aspect, In the above-mentioned film forming step, the above-mentioned raw material gas is introduced from the pellicle vent provided in the pellicle frame of the above-mentioned pellicle.
(第3態樣) 根據本發明之第3態樣， 提供如第2態樣記載之光罩之修正方法， 其中上述護膜由具有可與上述護膜通氣口密接之開口部之夾具夾持， 上述成膜步驟中，上述原料氣體通過上述開口部從上述護膜通氣口導入。(3rd aspect) According to the third aspect of the present invention, Provide the correction method of the photomask as described in the second aspect, Wherein the above-mentioned protective film is held by a clamp having an opening that can be closely connected with the above-mentioned protective film vent, In the film forming step, the raw material gas is introduced from the pellicle vent through the opening.
(第4態樣) 根據本發明之第4態樣， 提供如第1～3之態樣之任一項記載之光罩之修正方法， 其於上述成膜步驟後具有氣體置換步驟，該氣體置換步驟藉由向上述護膜空間內導入置換氣體，將上述原料氣體從上述護膜空間排出。(4th aspect) According to the fourth aspect of the present invention, Provide the correction method of the photomask as described in any one of the aspects 1 to 3, It has a gas replacement step after the film forming step. In the gas replacement step, the raw material gas is discharged from the pellicle space by introducing a replacement gas into the pellicle space.
(第5態樣) 根據本發明之第5態樣， 提供如第1～4之態樣之任一項記載之光罩之修正方法， 其中上述成膜步驟中將上述光罩加溫。(5th aspect) According to the fifth aspect of the present invention, Provide the correction method of the photomask as described in any one of the aspects 1 to 4, In the above film forming step, the above photomask is heated.
(第6態樣) 根據本發明之第6態樣， 提供一種附護膜之光罩之製造方法， 其具有使用如第1～5之態樣之任一項記載之光罩之修正方法，修正形成於上述光罩的轉印用圖案之缺陷之步驟。(6th aspect) According to the sixth aspect of the present invention, Provides a method for manufacturing a photomask with a protective film, This method includes the step of correcting defects in the transfer pattern formed on the photomask using the photomask correction method described in any one of aspects 1 to 5.
(第7態樣) 根據本發明之第7態樣， 提供一種顯示裝置之製造方法，其具有以下步驟： 準備根據第6態樣記載之製造方法所製造之附護膜之光罩；及 使用曝光裝置曝光上述附護膜之光罩，將轉印用圖案轉印至被轉印體。(7th aspect) According to the seventh aspect of the present invention, A manufacturing method of a display device is provided, which has the following steps: Prepare a photomask with a protective film manufactured according to the manufacturing method described in aspect 6; and The photomask with the protective film is exposed using an exposure device, and the transfer pattern is transferred to the object to be transferred.
(第8態樣) 根據本發明之第8態樣， 提供一種光罩之修正裝置， 其係修正於透明基板之主表面具備轉印用圖案之光罩的上述轉印用圖案產生之缺陷者，其具備： 光罩保持器，其保持於上述主表面貼附有護膜之狀態之上述光罩； 氣體導入管，其用以向由上述光罩與上述護膜形成之護膜空間導入原料氣體； 雷射照射器件，其穿過上述護膜所具有之護膜薄膜對缺陷部位照射雷射光； 雷射水平移動器件，其於XY平面內，使上述雷射照射器件移動；及 控制器件，其控制上述雷射水平移動器件。(8th mode) According to the eighth aspect of the present invention, Provide a photomask correction device, It is to correct the defects caused by the above-mentioned transfer pattern in the photomask having the transfer pattern on the main surface of the transparent substrate, and it has: A photomask holder that holds the photomask in a state where a protective film is attached to the main surface; A gas introduction pipe used to introduce raw material gas into the pellicle space formed by the above-mentioned photomask and the above-mentioned pellicle; A laser irradiation device, which passes through the protective film of the protective film and irradiates laser light to the defective part; A laser horizontal moving device that moves the above-mentioned laser irradiation device in the XY plane; and A control device that controls the above-mentioned laser horizontal movement device.
(第9態樣) 根據本發明之第9態樣， 提供如第8態樣之光罩之修正裝置， 其進而具備具有一對中空臂之夾具， 上述一對臂之至少一者連接於上述氣體導入管，並具有可與設置於上述護膜所具有之護膜框之護膜通氣口密接之開口部， 上述夾具以上述開口部與上述護膜通氣口密接之方式，藉由上述一對臂夾持上述護膜框。(9th aspect) According to the ninth aspect of the present invention, Provides a correction device for the photomask in the 8th aspect, It further has a clamp with a pair of hollow arms, At least one of the pair of arms is connected to the gas inlet pipe, and has an opening that can be tightly connected to the pellicle vent provided on the pellicle frame of the pellicle, The clamp holds the pellicle frame via the pair of arms in such a manner that the opening is in close contact with the pellicle vent.
(第10態樣) 根據本發明之第10態樣， 提供如第8或9之態樣記載之光罩之修正裝置， 其進而具備用以從上述護膜空間將剩餘之原料氣體排出之氣體排出管。(Moment 10) According to the tenth aspect of the present invention, Providing a correction device for the reticle as described in Section 8 or 9, It is further equipped with a gas discharge pipe for discharging the remaining raw material gas from the above-mentioned pellicle space.
(第11態樣) 根據本發明之第11態樣， 提供如第8～10之態樣之任一項記載之光罩之修正裝置， 其進而具備將上述光罩加溫之加熱器。 [發明之效果](11th aspect) According to the eleventh aspect of the present invention, Providing a reticle correction device as described in any one of aspects 8 to 10, It further has a heater for heating the photomask. [Effects of the invention]
根據本發明，可提供無需從光罩拆除護膜便可修正光罩之缺陷之光罩之修正方法、光罩之修正裝置、附護膜之光罩之製造方法及顯示裝置之製造方法。According to the present invention, it is possible to provide a photomask correction method that can correct the defects of the photomask without removing the protective film from the photomask, a photomask correction device, a manufacturing method of a photomask with a protective film, and a manufacturing method of a display device.
首先，對本實施形態之光罩、護膜及轉印用圖案之缺陷進行說明。First, the defects of the photomask, protective film, and transfer pattern of this embodiment will be described.
＜1.光罩、護膜及轉印用圖案之缺陷之例＞ 對本發明之一實施形態之光罩、護膜及轉印用圖案之缺陷之一例進行說明。<1. Examples of defects in photomasks, protective films, and transfer patterns> An example of defects in the photomask, protective film, and transfer pattern according to one embodiment of the present invention will be described.
(光罩) 如圖1所示，本實施形態之光罩1係將透明基板1a上之至少1個薄膜圖案化而形成轉印用圖案1b而成者。例如，光罩1係可藉由對在透明基板1a之一個主表面形成遮光膜等薄膜而成之光罩基板應用光微影法形成轉印用圖案1b而獲得。 具體而言，光罩1以如下之方法製造而成。 首先，準備於透明基板1a上形成薄膜而成之光罩基板。繼而，藉由將薄膜圖案化，形成轉印用圖案1b。該薄膜之圖案化可視需要進行複數次。於形成有完成之轉印用圖案1b之主表面貼附護膜2。繼而，使用檢查裝置檢查轉印用圖案1b有無缺陷。於發現缺陷之情形時，使用本發明之光罩之修正方法修正缺陷。藉此，製成附護膜之光罩。(photomask) As shown in FIG. 1 , the photomask 1 of this embodiment is formed by patterning at least one thin film on a transparent substrate 1 a to form a transfer pattern 1 b. For example, the mask 1 can be obtained by applying a photolithography method to a mask substrate in which a thin film such as a light-shielding film is formed on one main surface of the transparent substrate 1a to form the transfer pattern 1b. Specifically, the photomask 1 is manufactured by the following method. First, a photomask substrate in which a thin film is formed on the transparent substrate 1a is prepared. Next, the film is patterned to form a transfer pattern 1b. The film can be patterned as many times as necessary. The protective film 2 is attached to the main surface on which the completed transfer pattern 1b is formed. Next, the transfer pattern 1b is inspected for defects using an inspection device. When a defect is found, the mask correction method of the present invention is used to correct the defect. In this way, a photomask with a protective film is produced.
(護膜) 如圖1所示，於構成光罩1之透明基板之主表面貼附有四邊形之護膜2。藉由將護膜2貼附於主表面，可抑制異物附著於轉印用圖案1b。再者，本說明書中，將構成光罩1之透明基板所具有之2個主面中形成有轉印用圖案1b之面稱為「主表面」，將另一主面稱為「背面」。(protective film) As shown in FIG. 1 , a rectangular protective film 2 is attached to the main surface of the transparent substrate constituting the photomask 1 . By attaching the protective film 2 to the main surface, it is possible to prevent foreign matter from adhering to the transfer pattern 1b. In addition, in this specification, the surface on which the transfer pattern 1b is formed among the two main surfaces of the transparent substrate constituting the photomask 1 is called a "main surface", and the other main surface is called a "back surface".
護膜2具有護膜框2b與護膜薄膜2a。藉由將護膜框2b貼附於光罩1之主表面之4條邊之外緣附近，可固定護膜2。如圖2所示，護膜框2b由4個邊部形成為四邊形框狀。詳細情況雖未圖示，4個邊部分別具有經由接著劑等與光罩1之主表面相接之下端面、與下端面對向之上端面、連接下端面與上端面之外周面、及與外周面對向之內周面。內周面位於護膜框2b之內側。再者，護膜薄膜2a當用於顯示裝置製造用光罩時可使用公知者。The pellicle 2 has a pellicle frame 2b and a pellicle film 2a. By attaching the pellicle frame 2b to the outer edges of the four main surfaces of the photomask 1, the pellicle 2 can be fixed. As shown in FIG. 2 , the pellicle frame 2 b is formed into a quadrangular frame shape with four sides. Although the details are not shown in the figure, the four edges respectively have a lower end surface connected to the main surface of the photomask 1 via an adhesive or the like, an upper end surface facing the lower end surface, an outer peripheral surface connecting the lower end surface and the upper end surface, and The inner peripheral surface faces the outer peripheral surface. The inner peripheral surface is located inside the protective film frame 2b. In addition, when the pellicle film 2a is used as a photomask for manufacturing a display device, a well-known one can be used.
如圖2所示，於護膜框2b以特定之間隔設置有複數個可調整護膜2內外之氣壓差之通氣口3(以下亦稱為護膜通氣口3)。通氣口3從護膜框2b之外周面向內周面貫通。此處，雖然分別於護膜框2b之相互對向之2個邊部各設置有2個護膜通氣口3，但僅為一例，護膜通氣口3之數量或設置形態任意。As shown in Figure 2, a plurality of vents 3 (hereinafter also referred to as pellicle vents 3) that can adjust the air pressure difference between the inside and outside of the pellicle 2 are provided at specific intervals on the pellicle frame 2b. The vent 3 penetrates from the outer peripheral surface of the protective film frame 2b to the inner peripheral surface. Here, although two pellicle vents 3 are respectively provided at two opposite sides of the pellicle frame 2b, this is only an example, and the number or arrangement of the pellicle vents 3 is arbitrary.
(轉印用圖案之缺陷) 光罩1之轉印用圖案1b之缺陷有透光率低於精度之黑缺陷與透光率高於精度之白缺陷。黑缺陷係因殘留於非所需之部分之薄膜或異物之附著等而產生之缺陷。白缺陷係因必要之薄膜之缺損等而產生之缺陷，例如，於將透明基板1a上之薄膜圖案化時產生(參照圖1(a))。(Defects in the transfer pattern) The defects of the transfer pattern 1b of the photomask 1 include black defects whose light transmittance is lower than the accuracy and white defects whose light transmittance is higher than the accuracy. Black defects are defects caused by film remaining in undesired parts or adhesion of foreign matter, etc. White defects are defects caused by defects in necessary thin films, for example, when the thin film on the transparent substrate 1a is patterned (see FIG. 1(a) ).
繼而，基於圖式對本發明之光罩之修正方法進行說明。Next, the photomask correction method of the present invention will be described based on the drawings.
＜2.光罩之修正方法例＞ 對本發明之一實施形態之光罩之修正方法之一例進行說明。 圖1係表示本實施形態之光罩1之修正方法之概要之說明圖。 形成於本實施形態之貼附有護膜2之光罩1之轉印用圖案1b之缺陷部位4可藉由成膜步驟進行修正，該成膜步驟係向護膜空間5導入原料氣體(參照圖1(a))，並通過護膜薄膜2a對缺陷部位4照射雷射光9，使修正膜6沈積於缺陷部位4(參照圖1(b))。 以下，使用圖式對成膜步驟進行說明。再者，缺陷部位4係指產生缺陷之區域。又，護膜空間5係指由光罩1與護膜2形成之空間(即，由光罩之主表面、護膜框2b、及護膜薄膜2a所包圍之空間)。＜2. Example of mask correction method＞ An example of a photomask correction method according to an embodiment of the present invention will be described. FIG. 1 is an explanatory diagram showing an outline of the correction method of the photomask 1 of this embodiment. The defective portion 4 formed in the transfer pattern 1b of the photomask 1 to which the protective film 2 is attached in this embodiment can be corrected by a film forming step in which a raw material gas is introduced into the protective film space 5 (see 1(a)), and the defective part 4 is irradiated with laser light 9 through the protective film 2a, so that the correction film 6 is deposited on the defective part 4 (see FIG. 1(b)). Hereinafter, the film formation step is explained using diagrams. In addition, the defective part 4 refers to the area where the defect occurs. Moreover, the pellicle space 5 refers to the space formed by the photomask 1 and the pellicle 2 (that is, the space surrounded by the main surface of the photomask, the pellicle frame 2b, and the pellicle film 2a).
(成膜步驟) 首先，如圖1(a)所示，從護膜通氣口3向護膜空間5導入用以形成修正膜6之原料氣體。藉此，產生白缺陷之轉印用圖案1b之附近變為原料氣體之氛圍。藉由圖1(a)之右側黑色箭頭表示原料氣體導入護膜空間5之情況。再者，關於原料氣體將於下文進行敍述。(film forming step) First, as shown in FIG. 1(a) , the raw material gas for forming the correction film 6 is introduced from the pellicle vent 3 into the pellicle space 5 . Thereby, the vicinity of the transfer pattern 1b where the white defect occurs becomes the atmosphere of the raw material gas. The black arrow on the right side of Figure 1(a) indicates the introduction of the raw material gas into the membrane space 5. In addition, the raw material gas will be described later.
繼而，如圖1(a)所示，於缺陷部位4成為原料氣體氛圍之狀態下，從雷射振盪器8通過護膜薄膜2a對缺陷部位4照射特定波長之雷射光9。此時，藉由對轉印用圖案1b之缺陷部位4聚焦照射雷射光9，如圖1(b)所示，原料氣體發生反應所生成之修正膜6沈積於缺陷部位4。又，於護膜薄膜2a之位置因雷射光9為散焦狀態，故並未實質上產生護膜薄膜2a之損傷。Next, as shown in FIG. 1(a) , while the defective part 4 is in a source gas atmosphere, laser light 9 of a specific wavelength is irradiated from the laser oscillator 8 through the protective film 2 a to the defective part 4 . At this time, by focusing and irradiating the laser light 9 on the defective part 4 of the transfer pattern 1b, the correction film 6 generated by the reaction of the raw material gas is deposited on the defective part 4 as shown in FIG. 1(b). In addition, since the laser light 9 is in a defocused state at the position of the pellicle film 2a, no substantial damage is caused to the pellicle film 2a.
藉由持續導入原料氣體特定時間，充滿護膜空間5內之氣體(包括原料氣體)之一部分從其他護膜通氣口3排出。藉此，可抑制護膜空間5內之氣壓大幅超過護膜空間外之氣壓。By continuously introducing the raw material gas for a specific period of time, part of the gas (including the raw material gas) filling the pellicle space 5 is discharged from the other pellicle vents 3 . Thereby, the air pressure inside the protective film space 5 can be suppressed from significantly exceeding the air pressure outside the protective film space.
又，為了促進氣體之排出，並抑制被排出之原料氣體滯留於護膜通氣口3之出口附近，亦可從上述其他護膜通氣口3之外部抽氣。In addition, in order to promote the discharge of gas and prevent the discharged raw material gas from remaining near the outlet of the pellicle vent 3 , air can also be extracted from outside the other pellicle vents 3 .
再者，上述成膜步驟中，為了降低原料氣體沈積於非所需之部位之風險，較佳為藉由配置於光罩1之背面之加熱器75將光罩1加溫，間接地將主表面附近之原料氣體加溫。Furthermore, in the above-mentioned film forming step, in order to reduce the risk of the raw material gas being deposited in undesirable parts, it is preferable to heat the photomask 1 through the heater 75 disposed on the back of the photomask 1 to indirectly heat the photomask 1 . The raw gas near the surface is heated.
於完成轉印用圖案1b之缺陷之修正後，可利用護膜通氣口3將剩餘之原料氣體排出。例如，可將1個或複數個護膜通氣口3用於導入原料氣體，將其他護膜通氣口3用於排氣。此處，剩餘之原料氣體係指存在於護膜空間5之原料氣體中無助於形成修正膜6者。例如，藉由將下述置換氣體導入至護膜空間5，可將剩餘之原料氣體從護膜空間5排出。After completing the correction of the defects of the transfer pattern 1b, the remaining raw material gas can be discharged through the protective film vent 3. For example, one or a plurality of pellicle vents 3 may be used to introduce raw material gas, and other pellicle vents 3 may be used for exhaust. Here, the remaining raw material gas system refers to the raw material gas existing in the membrane space 5 that does not contribute to the formation of the correction film 6 . For example, by introducing the following replacement gas into the pellicle space 5 , the remaining raw material gas can be discharged from the pellicle space 5 .
繼而，基於圖式對本發明之光罩之修正裝置進行說明。Next, the photomask correction device of the present invention will be described based on the drawings.
＜3.光罩之修正裝置之構成例＞ 對本發明之一實施形態之光罩之修正裝置之構成例進行說明。 圖3係例示本實施形態之光罩之修正裝置100之概要之結構圖。＜3.Construction example of mask correction device＞ A structural example of a mask correction device according to an embodiment of the present invention will be described. FIG. 3 is a schematic structural diagram illustrating the mask correction device 100 of this embodiment.
(整體構成) 本實施形態中舉例說明之光罩之修正裝置100如圖1所說明般，構成為藉由雷射CVD法對貼附有護膜2之光罩1進行處理，於缺陷部位4形成修正膜6，藉此無需從光罩1拆除護膜2便可修正轉印用圖案1b產生之缺陷。(overall composition) The mask correction device 100 illustrated in this embodiment is configured to process the mask 1 to which the protective film 2 is attached by the laser CVD method, as illustrated in FIG. 1 , to form a correction film 6 on the defective part 4 . , whereby the defects caused by the transfer pattern 1 b can be corrected without removing the protective film 2 from the photomask 1 .
光罩之修正裝置100主要具備：光罩保持器15、夾具7、氣體導入管20、雷射振盪器(雷射照射器件)8、雷射水平移動部(雷射水平移動器件)30、及上部XYZ機械臂控制部(控制器件)35。The mask correction device 100 mainly includes: a mask holder 15, a clamp 7, a gas introduction pipe 20, a laser oscillator (laser irradiation device) 8, a laser horizontal moving part (laser horizontal moving device) 30, and The upper XYZ robot arm control part (control device) 35.
(光罩保持器) 光罩保持器15係用以保持貼附有護膜2之光罩1者。光罩保持器15上之光罩1以主表面為上，實質上水平地保持。實質上水平包括光罩1略有撓曲之情形。又，光罩保持器15之尺寸根據光罩1之尺寸適當選擇。(Mask holder) The mask holder 15 is used to hold the mask 1 to which the protective film 2 is attached. The mask 1 on the mask holder 15 is held substantially horizontally with the main surface facing upward. Substantial level includes the situation where the photomask 1 is slightly deflected. In addition, the size of the mask holder 15 is appropriately selected according to the size of the mask 1 .
(夾具) 夾具7夾持護膜框2b。夾具7具有用以夾持護膜框2b之一對臂7a(詳細情況將於下文敍述)及將臂彼此連結之連結部7b。圖3中雖然表示有一對連結部7b作為一例，但連結部之數量並無限定。又，「夾持」不僅包括一對臂7a各自與護膜框2b接觸(密接)而夾住其之形態，亦包括如下形態，即，以於一對臂7a之任一者與護膜框2b之間設置若干空間(即，使一對臂7a之任一者不與護膜框2b接觸)而夾著護膜框2b之方式，配置一對臂7a。詳細情況將於下文敍述，可將一對臂7a之一者用於原料氣體之導入，並將另一者用於排氣。例如，向護膜空間5內之氣體之導入可選擇如下等態樣，即，使一個臂7a與護膜框2b密接來向護膜空間5內導入氣體，而當排出護膜空間5內之氣體時，使另一個臂7a不與護膜框2b接觸地進行。於不接觸之情形時，於可從設置於該另一個臂7a之下述開口部10抽吸該氣體，從而使自護膜空間5排出之氣體不滯留於護膜通氣口3之出口附近的位置配置該另一個臂7a即可。(fixture) The clamp 7 clamps the protective film frame 2b. The clamp 7 has a pair of arms 7a for clamping the pellicle frame 2b (details will be described below) and a connecting portion 7b that connects the arms to each other. Although a pair of connection parts 7b is shown as an example in FIG. 3, the number of connection parts is not limited. In addition, "clamping" includes not only the form in which each of the pair of arms 7a is in contact (close contact) with the pellicle frame 2b and clamps it, but also includes the form in which either one of the pair of arms 7a is in contact with the pellicle frame 2b. The pair of arms 7a is arranged so as to sandwich the pellicle frame 2b with a certain space between 2b (that is, so that neither of the pair of arms 7a comes into contact with the pellicle frame 2b). As will be described in detail later, one of the pair of arms 7a can be used for introducing the raw material gas, and the other can be used for exhausting the gas. For example, the gas introduction into the pellicle space 5 can be selected as follows: that is, one arm 7a is in close contact with the pellicle frame 2b to introduce gas into the pellicle space 5, and when the gas in the pellicle space 5 is discharged When doing so, the other arm 7a is not in contact with the pellicle frame 2b. In the absence of contact, the gas can be sucked from the opening 10 provided below the other arm 7a, so that the gas discharged from the protective film space 5 does not remain near the outlet of the protective film vent 3. It suffices to configure the other arm 7a in the desired position.
(臂) 為了使原料氣體通過，臂7a構成為中空。為了導入原料氣體及排出剩餘之原料氣體等，於臂7a設置有與護膜通氣口3相對應之複數個開口部10。臂7a之內部之構成並無特別限定，只要是原料氣體可通過之中空即可。例如，亦可於臂7a之內部設置與氣體導入管20與開口部10連通之通氣路(未圖示)。(arm) The arm 7a is hollow in order to allow the raw material gas to pass therethrough. In order to introduce the raw material gas and discharge the remaining raw material gas, the arm 7 a is provided with a plurality of openings 10 corresponding to the pellicle vent 3 . The internal structure of the arm 7a is not particularly limited as long as it is hollow through which the raw material gas can pass. For example, a gas passage (not shown) communicating with the gas introduction pipe 20 and the opening 10 may be provided inside the arm 7a.
夾具7藉由從設置有護膜通氣口3之2個外周面側以一對臂7a夾著護膜框2b，可使開口部10與護膜通氣口3密接。藉此，可通過開口部10從護膜通氣口3將原料氣體導入至護膜空間5。又，作為檢測利用臂7a夾持護膜框2b之狀態之感測器，可將限制開關設置於臂7a。The clamp 7 clamps the pellicle frame 2b with a pair of arms 7a from the two outer peripheral surfaces where the pellicle vent 3 is provided, so that the opening 10 and the pellicle vent 3 can be brought into close contact with each other. Thereby, the raw material gas can be introduced from the pellicle vent 3 into the pellicle space 5 through the opening 10 . In addition, as a sensor for detecting the state of holding the pellicle frame 2b by the arm 7a, a limit switch can be provided on the arm 7a.
因以一對臂7a夾著護膜框2b時，有可能開口部10之位置從護膜通氣口3之位置稍偏移，故開口部10較佳為大於護膜通氣口3。例如，開口部10之縱橫之內徑可較護膜通氣口3之外緣大1～2 mm左右。藉此，即便開口部10之位置從護膜通氣口3之位置稍偏移，亦可將護膜通氣口3之外緣收容於開口部10內。When the pellicle frame 2b is sandwiched between the pair of arms 7a, the position of the opening 10 may be slightly shifted from the position of the pellicle vent 3, so the opening 10 is preferably larger than the pellicle vent 3. For example, the vertical and horizontal inner diameters of the opening 10 may be approximately 1 to 2 mm larger than the outer edge of the membrane vent 3 . Thereby, even if the position of the opening 10 is slightly offset from the position of the pellicle vent 3 , the outer edge of the pellicle vent 3 can still be accommodated in the opening 10 .
又，為了抑制原料氣體形成無用之膜，較佳為將臂7a加溫。加溫方法並無特別限定，可使用加熱器等公知者。In addition, in order to prevent the raw material gas from forming a useless film, it is preferable to heat the arm 7a. The heating method is not particularly limited, and a known method such as a heater can be used.
臂7a可藉由移動機構(未圖示)沿著連結部7b於X方向上或Y方向上(圖3中為Y方向)移動。藉此，夾具7可夾持各種大小之護膜。臂7a之X方向或Y方向之移動由控制移動機構之夾具移動控制部(未圖示)控制。夾具移動控制部亦可由控制單元40控制。The arm 7a can move in the X direction or the Y direction (the Y direction in Fig. 3) along the connecting portion 7b by a moving mechanism (not shown). Thereby, the clamp 7 can clamp protective films of various sizes. The movement of the arm 7a in the X direction or the Y direction is controlled by a jig movement control unit (not shown) that controls the movement mechanism. The clamp movement control part can also be controlled by the control unit 40.
本實施形態中，亦包含將與光罩1之主表面之分隔距離實質上固定之面設為與主表面平行之面，於主表面產生有撓曲之情形。而且，將假定於光罩1之主表面未產生撓曲之情形時之與主表面平行之面設為XY平面，將與主表面之長邊或短邊平行之方向設為X方向，與XY平面內之X方向垂直之方向設為Y方向。進而，將與X方向及Y方向垂直之方向設為Z方向。This embodiment also includes the case where the surface separated by a substantially constant distance from the main surface of the photomask 1 is a surface parallel to the main surface, causing deflection on the main surface. Furthermore, assuming that the main surface of the photomask 1 does not deflect, let the plane parallel to the main surface be the XY plane, and let the direction parallel to the long side or short side of the main surface be the X direction. The direction perpendicular to the X direction in the plane is set as the Y direction. Furthermore, let the direction perpendicular to the X direction and the Y direction be the Z direction.
(氣體導入管) 氣體導入管20構成為連接於夾具7之臂7a，用以將從原料箱70供給而至之原料氣體導入護膜空間5。雖然圖3中例示1個氣體導入管20，但氣體導入管之數量亦可為複數個。設置於夾具7之臂7a之開口部10可直接地、或介置其他構件而間接地連接於氣體導入管20。因此，原料氣體通過氣體導入管20，通過夾具7之臂7a之開口部10從護膜通氣口3導入至護膜空間5。(gas introduction pipe) The gas introduction pipe 20 is connected to the arm 7 a of the clamp 7 and is used to introduce the raw material gas supplied from the raw material tank 70 into the pellicle space 5 . Although one gas introduction pipe 20 is illustrated in FIG. 3 , the number of gas introduction pipes may be plural. The opening 10 provided in the arm 7a of the clamp 7 can be connected to the gas introduction pipe 20 directly or indirectly through other members. Therefore, the raw material gas passes through the gas introduction pipe 20 and is introduced from the pellicle vent 3 to the pellicle space 5 through the opening 10 of the arm 7a of the clamp 7.
用以向護膜空間5導入原料氣體之氣體導入系統除氣體導入管20外，還具備原料箱70及載氣供給管(未圖示)。The gas introduction system for introducing the raw material gas into the pellicle space 5 includes, in addition to the gas introduction pipe 20, a raw material box 70 and a carrier gas supply pipe (not shown).
(載氣供給管) 載氣供給管係將包含惰性氣體之載氣(例如氬氣)供給至原料箱70者。(carrier gas supply pipe) The carrier gas supply pipe supplies carrier gas containing an inert gas (for example, argon gas) to the raw material tank 70 .
(原料箱) 原料箱70用以藉由將經加熱昇華而氣化之用於形成修正膜6之原料與載氣混合來生成原料氣體。(raw material box) The raw material tank 70 is used to generate a raw material gas by mixing the raw material for forming the correction film 6 and the carrier gas that have been heated, sublimated and vaporized.
原料箱70例如可連接於下述氣體控制部65，藉由該氣體控制部65之控制，可從原料箱70將原料氣體供給至氣體導入管20。原料氣體通過氣體導入管20，從護膜通氣口3之任一者導入至護膜空間5。為了抑制通過氣體導入管20之原料氣體因外部氣體而被冷卻形成無用之膜，可使用隔熱材覆蓋氣體導入管20。又，原料箱70及載氣供給管並非必須設置於修正裝置100內，亦可與修正裝置100分開設置。For example, the raw material tank 70 can be connected to a gas control unit 65 described below, and the raw material gas can be supplied from the raw material tank 70 to the gas introduction pipe 20 under the control of the gas control unit 65 . The raw material gas passes through the gas introduction pipe 20 and is introduced into the pellicle space 5 from any one of the pellicle vents 3 . In order to prevent the raw material gas passing through the gas introduction pipe 20 from being cooled by external air and forming a useless film, the gas introduction pipe 20 may be covered with a heat insulating material. In addition, the raw material box 70 and the carrier gas supply pipe do not have to be installed in the correction device 100, and may be installed separately from the correction device 100.
(原料氣體) 如圖1所說明，藉由因照射之雷射光9所產生之光CVD反應，將分解原料氣體，藉此，可使修正膜6沈積於缺陷部位4。作為原料氣體，較佳為使用金屬羰基化合物。具體而言，可列舉羰基鉻(Cr(CO)6 )、羰基鉬(Mo(CO)6 )、羰基鎢(W(CO)6 )等。羰基鉻耐化學品性較高，故而特佳。(Source gas) As illustrated in FIG. 1 , the source gas is decomposed by the photoCVD reaction caused by the irradiated laser light 9 , whereby the correction film 6 can be deposited on the defective portion 4 . As the raw material gas, a metal carbonyl compound is preferably used. Specific examples include chromium carbonyl (Cr(CO) 6 ), molybdenum carbonyl (Mo(CO) 6 ), tungsten carbonyl (W(CO) 6 ), and the like. Chromium carbonyl is particularly good because of its high chemical resistance.
(雷射振盪器) 雷射振盪器8係向轉印用圖案1b照射雷射光9者，構成為配置於護膜薄膜2a之上側，可於XY平面內相對於光罩1相對地移動。進而，雷射振盪器8構成為亦可相對於光罩1相對地於Z方向移動，從而即便光罩1產生撓曲雷射光9亦可相對於缺陷部位4進行聚焦調整。藉由此種構成，雷射振盪器8可到達轉印用圖案1b之上側之任意位置，以聚焦於缺陷部位4之狀態照射雷射光9。再者，相對地移動意為光罩1及雷射振盪器8中之其中一者靜止之狀態下另一者移動，或二者均移動。(Laser oscillator) The laser oscillator 8 irradiates the transfer pattern 1 b with the laser light 9 and is arranged on the upper side of the pellicle film 2 a so as to be relatively movable in the XY plane with respect to the photomask 1 . Furthermore, the laser oscillator 8 is configured to move relative to the mask 1 in the Z direction, so that even if the mask 1 generates deflection of the laser light 9 , the focus adjustment can be performed on the defective portion 4 . With this configuration, the laser oscillator 8 can reach any position above the transfer pattern 1 b and irradiate the laser light 9 in a state of focusing on the defective portion 4 . Furthermore, relatively moving means that one of the mask 1 and the laser oscillator 8 moves while the other is stationary, or both move.
所照射之雷射光9於成為原料氣體氛圍之缺陷部位4使其發生光CVD反應。藉此，可使修正膜6沈積於缺陷部位4。根據修正裝置100，可將修正膜6之膜厚設為500～4000Å。又，可修正之白缺陷之尺寸可為0.3～50 μm左右。The irradiated laser light 9 causes a photoCVD reaction to occur in the defective portion 4 that becomes the source gas atmosphere. Thereby, the correction film 6 can be deposited on the defective part 4 . According to the correction device 100, the film thickness of the correction film 6 can be set to 500 to 4000Å. In addition, the size of the white defect that can be corrected can be about 0.3 to 50 μm.
雷射光9之照射由雷射控制部(未圖示)控制，雷射控制部由控制單元40控制。使用之雷射光9之波長λ根據原料氣體之種類、光罩1之透明基板1a之材質、及護膜薄膜2a之材質等適當選擇最佳之波長λ即可。雷射光9之波長λ較佳為200 nm～600 nm，更佳為265 nm～530 nm。若為該等波長，則可更高精度地使修正膜6沈積於缺陷部位4。The irradiation of the laser light 9 is controlled by a laser control unit (not shown), and the laser control unit is controlled by the control unit 40 . The wavelength λ of the laser light 9 used can be appropriately selected according to the type of raw material gas, the material of the transparent substrate 1a of the photomask 1, and the material of the protective film 2a. The wavelength λ of the laser light 9 is preferably 200 nm to 600 nm, and more preferably 265 nm to 530 nm. If these wavelengths are used, the correction film 6 can be deposited on the defective portion 4 with higher accuracy.
(雷射水平移動部) 雷射水平移動部30係於XY平面內使雷射振盪器8移動者。雷射水平移動部30具備上部X機械臂30a與上部Y機械臂30b。(Laser horizontal moving part) The laser horizontal moving part 30 moves the laser oscillator 8 in the XY plane. The laser horizontal moving unit 30 includes an upper X robot arm 30a and an upper Y robot arm 30b.
(控制部) 作為控制部之上部XYZ機械臂控制部35係控制雷射水平移動部30者。(Control Department) The upper XYZ robot arm control unit 35 as the control unit controls the laser horizontal moving unit 30 .
修正裝置100進而具備雷射位移計45。The correction device 100 further includes a laser displacement meter 45 .
(雷射位移計) 雷射位移計45係檢測光罩保持器15上之光罩1之位置者。雷射位移計45構成為設置於光罩之上側，可於XY平面內及Z方向上移動。雷射位移計45藉由對於光罩保持器15上之光罩1，沿Z方向出射檢查光並檢測反射光，可檢測以光罩保持器15表面為基準時之主表面之高度。藉此，可檢測光罩保持器15上之光罩1之位置。(Laser Displacement Meter) The laser displacement meter 45 detects the position of the mask 1 on the mask holder 15 . The laser displacement meter 45 is arranged on the upper side of the photomask and is movable in the XY plane and in the Z direction. The laser displacement meter 45 can detect the height of the main surface with the surface of the mask holder 15 as a reference by emitting inspection light in the Z direction to the mask 1 on the mask holder 15 and detecting the reflected light. Thereby, the position of the mask 1 on the mask holder 15 can be detected.
修正裝置100進而具備氣體排出管50。The correction device 100 further includes a gas discharge pipe 50 .
(氣體排出管) 氣體排出管50用以將殘留於護膜空間5內之修正結束後之剩餘原料氣體排出。再者，圖3中雖然例示有1個氣體排出管50，但氣體排出管之數量亦可為複數個。氣體排出管50可直接地或介置其他構件而間接地連接於設置於夾具7之臂7a之1個或複數個開口部10。藉此，剩餘之原料氣體通過1個或複數個開口部10排出。為了更有效率(地)進行排氣，例如，亦可於臂7a之內部設置連通於氣體排出管50與開口部10之通氣路。(Gas discharge pipe) The gas discharge pipe 50 is used to discharge the remaining raw material gas remaining in the membrane space 5 after the correction is completed. Furthermore, although one gas discharge pipe 50 is illustrated in FIG. 3 , the number of gas discharge pipes may also be plural. The gas discharge pipe 50 may be connected to one or a plurality of openings 10 provided on the arm 7a of the clamp 7 directly or indirectly through other members. Thereby, the remaining raw material gas is discharged through one or a plurality of openings 10 . In order to exhaust gas more efficiently, for example, a ventilation path connecting the gas exhaust pipe 50 and the opening 10 may be provided inside the arm 7a.
為了抑制從護膜空間5排出之原料氣體滯留於護膜通氣口3之出口附近，較佳為從開口部10抽氣。於此情形時，為了不使護膜空間5內之氣壓因過量抽氣而變得過度小於護膜空間外之氣壓，可同時亦抽吸護膜空間外之空氣。例如，可於用於抽氣之開口部10之附近設置用以抽吸護膜空間外之空氣之空氣孔。In order to prevent the raw material gas discharged from the pellicle space 5 from remaining near the outlet of the pellicle vent 3 , it is preferable to evacuate the gas from the opening 10 . In this case, in order to prevent the air pressure in the protective film space 5 from becoming excessively lower than the air pressure outside the protective film space due to excessive air extraction, the air outside the protective film space can also be sucked out at the same time. For example, an air hole for sucking air outside the membrane space may be provided near the opening 10 for air extraction.
藉由將貯存於置換氣體箱(未圖示)之置換氣體導入至護膜空間5，可將剩餘之原料氣體排出。置換氣體箱可設置於修正裝置100內，亦可另外設置。作為置換氣體，例如可列舉如氮氣之惰性氣體及乾燥空氣。By introducing the replacement gas stored in the replacement gas tank (not shown) into the membrane space 5, the remaining raw material gas can be discharged. The replacement gas tank may be installed in the correction device 100 or may be installed separately. Examples of the replacement gas include inert gases such as nitrogen and dry air.
置換氣體與原料氣體同樣地，通過氣體導入管20，從與夾具7之開口部10密接之1個或複數個護膜通氣口3導入至護膜空間5。藉由導入置換氣體，將剩餘之原料氣體從其他護膜通氣口3擠出，通過連接於氣體排出管50之1個或複數個開口部10排出。如此，護膜空間5內之原料氣體被置換為置換氣體。Like the source gas, the replacement gas is introduced into the pellicle space 5 through the gas introduction pipe 20 from one or a plurality of pellicle vents 3 in close contact with the opening 10 of the jig 7 . By introducing the replacement gas, the remaining raw material gas is squeezed out from other pellicle vents 3 and discharged through one or a plurality of openings 10 connected to the gas discharge pipe 50 . In this way, the raw material gas in the pellicle space 5 is replaced by the replacement gas.
再者，原料氣體及置換氣體之導入與排出亦可由氣體控制部65控制。又，原料氣體導入與置換氣體導入可使用共同之氣體導入管，亦可使用不同之氣體導入管。於使用共同之氣體導入管之情形時，可藉由氣體控制部65切換原料氣體箱與氣體導入管之連接、及置換氣體箱與氣體導入管之連接。氣體控制部65由控制單元40控制。Furthermore, the introduction and discharge of the raw material gas and replacement gas can also be controlled by the gas control unit 65 . In addition, a common gas introduction pipe may be used for the raw material gas introduction and the replacement gas introduction, or different gas introduction pipes may be used. When a common gas introduction pipe is used, the gas control unit 65 can be used to switch the connection between the raw gas box and the gas introduction pipe, and the connection between the replacement gas box and the gas introduction pipe. The gas control unit 65 is controlled by the control unit 40 .
修正裝置100可進而具備觀察用光學系統55與觀察用照明60。The correction device 100 may further include an observation optical system 55 and an observation illumination 60 .
(觀察用光學系統、觀察用照明) 觀察用光學系統55與觀察用照明60係用以使光罩1上之任意位置可觀察。觀察用光學系統55與觀察用照明60可於將載置於光罩保持器15上之光罩1置於其間之狀態下配置於相互對向之位置。修正裝置100可於藉由觀察用光學系統55與觀察用照明60觀察缺陷之位置及形狀等之後照射雷射光9，故可進行更高精度之缺陷之修正。再者，觀察用光學系統55與觀察用照明60較佳為藉由觀察用光學系統控制部(未圖示)之控制而可與雷射振盪器8之動作同步移動。(Optical system for observation, lighting for observation) The observation optical system 55 and the observation illumination 60 are used to make any position on the mask 1 observable. The observation optical system 55 and the observation illumination 60 can be arranged at positions facing each other with the mask 1 placed on the mask holder 15 being placed therebetween. The correction device 100 can irradiate the laser light 9 after observing the position, shape, etc. of the defect through the observation optical system 55 and the observation illumination 60, so that it can correct the defect with higher precision. Furthermore, the observation optical system 55 and the observation illumination 60 are preferably controlled by an observation optical system control unit (not shown) so as to be movable in synchronization with the operation of the laser oscillator 8 .
雷射振盪器8及觀察用光學系統55較佳為於垂直於光罩1之主表面之方向(Z方向)上，可相對於載置於光罩保持器15上之光罩1相對地移動。藉此，即便光罩1產生撓曲，雷射光9亦可到達對於主表面適合之聚焦位置。即，雷射振盪器8可以相對於缺陷部位4調整聚焦之方式於Z方向上移動。The laser oscillator 8 and the observation optical system 55 are preferably movable relative to the mask 1 placed on the mask holder 15 in a direction perpendicular to the main surface of the mask 1 (Z direction). . Thereby, even if the mask 1 is deflected, the laser light 9 can reach a focus position suitable for the main surface. That is, the laser oscillator 8 can move in the Z direction to adjust the focus relative to the defective part 4 .
雷射振盪器8及觀察用光學系統55較佳為於XY平面內及Z方向上可移動。因此，本實施形態之光罩之修正裝置100較佳為具備使雷射振盪器8及觀察用光學系統55於XY平面內移動之上部X機械臂30a及上部Y機械臂30b、及使該等於Z方向移動之上部Z機械臂30c。上部X機械臂30a、上部Y機械臂30b、及上部Z機械臂30c由上部XYZ機械臂控制部35控制。上部XYZ機械臂控制部35由控制單元40控制。The laser oscillator 8 and the observation optical system 55 are preferably movable in the XY plane and in the Z direction. Therefore, the mask correcting device 100 of this embodiment is preferably provided with an upper X robot arm 30a and an upper Y robot arm 30b that move the laser oscillator 8 and the observation optical system 55 in the XY plane, and the upper Y robot arm 30b. The upper Z robot arm 30c moves in the Z direction. The upper X robot arm 30a, the upper Y robot arm 30b, and the upper Z robot arm 30c are controlled by the upper XYZ robot arm control unit 35. The upper XYZ robot arm control section 35 is controlled by the control unit 40 .
又，較佳為觀察用照明60亦以與雷射振盪器8及觀察用光學系統55之動作同步之方式，可於XY平面內及Z方向上移動。因此，修正裝置100較佳為具備使觀察用照明60於XY平面內移動之下部X機械臂80及下部Y機械臂85、以及使其於Z方向移動之下部Z機械臂90。再者，觀察用照明60之X方向及Y方向上之位置較佳為與觀察用光學系統55之X方向及Y方向上之位置一致。下部X機械臂80、下部Y機械臂85、及下部Z機械臂90由下部XYZ機械臂控制部(未圖示)控制。下部XYZ機械由控制單元40控制。Furthermore, it is preferable that the observation illumination 60 is movable in the XY plane and in the Z direction in synchronization with the operations of the laser oscillator 8 and the observation optical system 55 . Therefore, the correction device 100 preferably includes the lower X robot arm 80 and the lower Y robot arm 85 that move the observation illumination 60 in the XY plane, and the lower Z robot arm 90 that moves the observation illumination 60 in the Z direction. Furthermore, the positions of the observation illumination 60 in the X direction and the Y direction are preferably consistent with the positions of the observation optical system 55 in the X direction and the Y direction. The lower X robot arm 80, the lower Y robot arm 85, and the lower Z robot arm 90 are controlled by a lower XYZ robot arm control unit (not shown). The lower XYZ machinery is controlled by control unit 40.
為了抑制原料氣體於光罩1之主表面上形成無用之膜，較佳為將原料氣體加溫。原料氣體之加溫方法並無特別限定，例如，修正裝置100可具備加熱器75作為加溫器件。藉由使用加熱器75例如將光罩1加溫，護膜空間5內之原料氣體亦間接地得到加溫，可抑制於主表面上形成無用之膜。護膜空間5內之原料氣體較佳為加溫至40℃以上，更佳為以成為40～50℃之範圍內之方式加溫。In order to prevent the raw material gas from forming a useless film on the main surface of the photomask 1, it is preferable to heat the raw material gas. The heating method of the raw material gas is not particularly limited. For example, the correction device 100 may include a heater 75 as a heating device. By using the heater 75 to heat the photomask 1, for example, the raw material gas in the pellicle space 5 is also indirectly heated, thereby suppressing the formation of a useless film on the main surface. The raw material gas in the pellicle space 5 is preferably heated to 40°C or above, and more preferably is heated in a range of 40 to 50°C.
只要可將護膜空間5內之原料氣體均勻地加溫，則加熱器75之配置位置並無特別限定，加熱器75例如可配置於光罩1之背面側。作為加熱器75，可使用對可見光透明之耐熱性之玻璃基板。具體而言，可列舉具備透明導電膜及電極之透明玻璃加熱器。As long as the source gas in the pellicle space 5 can be heated uniformly, the arrangement position of the heater 75 is not particularly limited. For example, the heater 75 can be arranged on the back side of the photomask 1 . As the heater 75, a heat-resistant glass substrate that is transparent to visible light can be used. Specifically, a transparent glass heater equipped with a transparent conductive film and an electrode can be mentioned.
藉由使用如上所述之玻璃基板，可將光罩1均勻地加溫。又，因利用玻璃基板之加溫不易產生氣流，故亦可抑制異物附著於光罩1。By using the glass substrate as described above, the photomask 1 can be heated evenly. In addition, since air flow is less likely to occur due to heating of the glass substrate, adhesion of foreign matter to the photomask 1 can also be suppressed.
＜4.本實施形態之效果＞ 根據本實施形態，發揮下述1個或複數個效果。<4. Effects of this embodiment> According to this embodiment, one or more of the following effects are exerted.
(a)根據本實施形態之光罩之修正方法或修正裝置100，可通過護膜薄膜2a修正光罩1之缺陷部位4。藉此，即便於貼附護膜2之後需要修正白缺陷之情形時，亦可不拆除護膜2而修正該白缺陷。因此，可於貼附護膜2之後所產生之修正時削減拆除護膜2之步驟，可實現光罩1(附護膜之光罩)之迅速修正及出貨。進而，因無需於修正後貼附新護膜，故可削減成本。(a) According to the photomask correction method or the correction device 100 of this embodiment, the defective portion 4 of the photomask 1 can be corrected using the pellicle film 2a. Thereby, even if the white defect needs to be corrected after the protective film 2 is attached, the white defect can be corrected without removing the protective film 2 . Therefore, the steps of removing the protective film 2 can be reduced when correction occurs after the protective film 2 is attached, and the photomask 1 (the photomask with the protective film) can be quickly corrected and shipped. Furthermore, since there is no need to attach a new protective film after correction, costs can be reduced.
(b)根據本實施形態之光罩之修正方法或修正裝置100，可於將光罩1置於大氣中之狀態下進行缺陷之修正，故可實現簡便之作業。(b) According to the mask correction method or the correction device 100 of this embodiment, the defect can be corrected while the mask 1 is placed in the atmosphere, so a simple operation can be realized.
(c)根據本實施形態之光罩之修正方法或修正裝置100，例如，可修正使用遮光膜或半透光膜作為形成於透明基板1a之薄膜之光罩。又，亦可修正藉由投影曝光進行轉印之光罩。再者，本實施形態中，作為一例，對未曝光(用於對被轉印體之轉印前)之光罩進行之修正作了記載，但亦可對曝光後(用於對被轉印體之轉印後)之光罩進行修正。(c) According to the mask correction method or the correction device 100 of this embodiment, for example, a mask using a light-shielding film or a semi-transmissive film as a thin film formed on the transparent substrate 1a can be corrected. Furthermore, it is also possible to correct the mask used for transfer by projection exposure. Furthermore, in this embodiment, as an example, the correction of the unexposed photomask (used before transfer to the transferred object) is described, but it may also be performed after exposure (used for transfer to the transferred object). After the body is transferred), the photomask is corrected.
＜5.光罩之用途＞ 光罩之用途並無限定。但，本實施形態之光罩之修正裝置100及修正方法可尤其適合用於修正製造平板顯示器(FPD，Flat Panel Display)時使用之光罩(附護膜之光罩)所產生之缺陷。＜5. Purpose of photomask＞ The use of the photomask is not limited. However, the mask correction device 100 and the correction method of this embodiment are particularly suitable for correcting defects caused by the masks (reticle-coated masks) used in manufacturing flat panel displays (FPDs, Flat Panel Displays).
例如，例示LCD(Liquid Crystal Display，液晶顯示裝置)或OLED(Organic Light Emitting Diode Display，有機發光二極體顯示裝置)等顯示裝置製造用光罩。此種用途之光罩例如其主表面為一邊300～2000 mm之四邊形，具體尺寸根據目標平板之規格而各異。所謂顯示裝置製造用，包括用於製造搭載於顯示裝置之顯示裝置用器件。又，亦包括應用投影曝光者、藉由具有NA(開口數)為0.08～0.15左右之光學系統曝光裝置製造之顯示裝置用光罩。作為用以曝光之光源，可使用i射線～g射線之範圍之任一波長，將包含該波長區域之光用作曝光光源尤其有利。For example, a photomask for manufacturing display devices such as LCD (Liquid Crystal Display) or OLED (Organic Light Emitting Diode Display) is exemplified. For example, the main surface of a photomask for this purpose is a quadrilateral with a side of 300 to 2000 mm. The specific dimensions vary according to the specifications of the target flat panel. The so-called display device manufacturing includes devices used for manufacturing display devices mounted on the display device. Also included are masks for display devices that use projection exposure and are manufactured by using an optical system exposure device with an NA (Number of Apertures) of about 0.08 to 0.15. As a light source for exposure, any wavelength in the range of i-rays to g-rays can be used, and it is particularly advantageous to use light containing this wavelength range as an exposure light source.
上述用途之光罩多包含1～300 μm左右者作為轉印用圖案1b之圖案寬度(CD：Critical Dimension，臨界尺寸)。於此種圖案產生白缺陷之情形時，若應用本實施形態之修正方法，則可更高效地、精確地進行修正。The photomask for the above-mentioned use often contains a pattern width (CD: Critical Dimension, critical dimension) of about 1 to 300 μm as the transfer pattern 1b. When a white defect occurs in such a pattern, if the correction method of this embodiment is applied, the correction can be performed more efficiently and accurately.
＜6.光罩之修正裝置之處理動作例＞ 繼而，對上述構成之光罩之修正裝置100之處理動作例進行說明。＜6. Example of processing operation of mask correction device＞ Next, an example of the processing operation of the mask correction device 100 configured as above will be described.
使用本實施形態之修正裝置100修正缺陷時，依次進行下述設置步驟、位置檢測步驟、座標軸決定步驟、連接步驟、成膜步驟、氣體置換步驟。再者，以下說明中，構成修正裝置100之各部之動作主要由控制單元40控制。When correcting defects using the correction device 100 of this embodiment, the following installation steps, position detection steps, coordinate axis determination steps, connection steps, film forming steps, and gas replacement steps are performed in sequence. Furthermore, in the following description, the operations of the components constituting the correction device 100 are mainly controlled by the control unit 40 .
(設置步驟) 設置步驟中，準備於主表面貼附有護膜2之光罩1，將該光罩1設置於光罩保持器15。進而，將光罩保持器15移動至修正裝置100內。(Setup steps) In the setting step, the photomask 1 with the protective film 2 attached to the main surface is prepared, and the photomask 1 is set in the photomask holder 15 . Furthermore, the mask holder 15 is moved into the correction device 100 .
(位置檢測步驟) 移動光罩保持器15時，存在光罩保持器15上之光罩1之位置發生偏移之情形。因此，位置檢測步驟中，藉由配置於光罩1之上側之雷射位移計45測定主表面之高度，獲取包含主表面之高度之分佈之資料，藉由該資料檢測光罩1之光罩保持器15上之位置。(position detection step) When the mask holder 15 is moved, the position of the mask 1 on the mask holder 15 may shift. Therefore, in the position detection step, the height of the main surface is measured by the laser displacement meter 45 arranged on the upper side of the reticle 1, and data including the distribution of the height of the main surface are obtained, and the reticle of the reticle 1 is detected using this data. position on the retainer 15.
(座標軸決定步驟) 座標軸決定步驟中，讀取形成於光罩1之外周附近之對準標記等，掌握轉印用圖案1b之大致配置方向。進而，藉由讀取轉印用圖案1b，精確地掌握轉印用圖案1b之配置方向，決定轉印用圖案之座標軸。藉由決定座標軸，可如下所述進行缺陷位置之特定。再者，對準標記係指為了進行轉印用圖案1b之對準而形成之圖案。(Steps for determining coordinate axes) In the coordinate axis determination step, alignment marks and the like formed near the outer periphery of the photomask 1 are read to determine the general arrangement direction of the transfer pattern 1 b. Furthermore, by reading the transfer pattern 1b, the arrangement direction of the transfer pattern 1b is accurately grasped, and the coordinate axis of the transfer pattern is determined. By determining the coordinate axis, the defect position can be specified as follows. In addition, the alignment mark refers to a pattern formed for the purpose of aligning the transfer pattern 1b.
(連接步驟) 連接步驟中，藉由以夾具7之一對臂7a夾住護膜框2b，使連接於氣體導入管20之夾具7之開口部10與護膜通氣口3密接、連接。藉由於夾具7之臂7a具備與護膜通氣口3相對應之開口部10，可使護膜通氣口3與臂7a之開口部10確實地密接，使導入原料氣體之作業效率提高。(Connection steps) In the connection step, by clamping the pellicle frame 2b with one of the pair of arms 7a of the clamp 7, the opening 10 of the clamp 7 connected to the gas inlet pipe 20 is in close contact with the pellicle vent 3 and connected. Since the arm 7a of the clamp 7 has the opening 10 corresponding to the pellicle vent 3, the pellicle vent 3 and the opening 10 of the arm 7a can be firmly in close contact, thereby improving the work efficiency of introducing the raw material gas.
(成膜步驟) 成膜步驟中，首先，向由光罩1與護膜2形成之護膜空間5導入原料氣體。原料氣體通過氣體導入管20，從與開口部10密接之1個或複數個護膜通氣口3導入。(film forming step) In the film forming step, first, a source gas is introduced into the pellicle space 5 formed by the photomask 1 and the pellicle 2 . The raw material gas passes through the gas introduction pipe 20 and is introduced from one or a plurality of pellicle vents 3 that are in close contact with the opening 10 .
導入原料氣體時，較佳為從其他1個或複數個護膜通氣口3排出，以使護膜空間5內之氣壓不大幅地超過護膜空間外之氣壓之方式進行調整。藉此，可抑制護膜薄膜2a膨脹。該排氣持續至下述氣體置換步驟結束。When the raw material gas is introduced, it is preferably discharged from one or more other pellicle vents 3 so that the air pressure in the pellicle space 5 does not greatly exceed the air pressure outside the pellicle space. Thereby, expansion of the pellicle film 2a can be suppressed. This exhaust continues until the gas replacement step described below is completed.
再者，為了抑制排出之原料氣體滯留於護膜通氣口3之出口附近，可從開口部10抽氣。於此情形時，如上所述，為了不使護膜空間5內之氣壓因過量之抽氣而過度小於護膜空間外之氣壓，可藉由於用於抽氣之開口部10之附近設置空氣孔等，亦同時抽吸護膜空間外之空氣。Furthermore, in order to prevent the discharged raw material gas from remaining near the outlet of the membrane vent 3 , air can be extracted from the opening 10 . In this case, as mentioned above, in order to prevent the air pressure in the pellicle space 5 from being excessively lower than the air pressure outside the pellicle space due to excessive air extraction, air holes can be provided near the opening 10 for air extraction. etc., while also sucking the air outside the protective film space.
又，為了抑制原料氣體於主表面形成無用之膜，將護膜空間5內之原料氣體加溫直至下述氣體置換步驟結束。In addition, in order to prevent the raw material gas from forming a useless film on the main surface, the raw material gas in the membrane space 5 is heated until the gas replacement step described below is completed.
再者，光罩1於形成轉印用圖案1b後，經過利用檢查裝置進行之缺陷檢查，預先掌握有缺陷部位4之位置(座標)。為了使該檢查裝置之座標與修正裝置100之座標一致，使檢查裝置之基準點與修正裝置100之基準點一致，設為座標之原點。Furthermore, after the transfer pattern 1b is formed on the photomask 1, it is subjected to defect inspection using an inspection device to determine the position (coordinates) of the defective portion 4 in advance. In order to make the coordinates of the inspection device consistent with the coordinates of the correction device 100, the reference point of the inspection device and the reference point of the correction device 100 are made consistent and set as the origin of the coordinates.
繼而，藉由通過護膜薄膜2a對缺陷部位4照射雷射光9，使原料氣體發生反應，使修正膜6沈積於缺陷部位4。Next, the defective part 4 is irradiated with the laser light 9 through the pellicle film 2a, so that the source gas reacts, and the correction film 6 is deposited on the defective part 4.
具體而言，基於藉由上述座標軸決定步驟獲得之座標軸及上述原點，獲取缺陷部位4之位置座標，通過護膜薄膜2a對缺陷部位4照射雷射光9。Specifically, based on the coordinate axis obtained in the coordinate axis determination step and the origin, the position coordinates of the defective part 4 are obtained, and the defective part 4 is irradiated with the laser light 9 through the protective film 2a.
藉由雷射光9使原料氣體發生反應，使修正膜6沈積於缺陷部位4。如此，修正光罩1之缺陷。再者，亦可於照射雷射光9之前包含調整雷射光9之聚焦之聚焦步驟。聚焦步驟中，將雷射光9調整為對成為修正對象之缺陷部位4聚焦，對護膜薄膜2a散焦。The raw material gas is reacted by the laser light 9, and the correction film 6 is deposited on the defective part 4. In this way, the defects of the photomask 1 are corrected. Furthermore, a focusing step of adjusting the focus of the laser light 9 may also be included before irradiating the laser light 9 . In the focusing step, the laser light 9 is adjusted to focus on the defective part 4 to be corrected and to defocus the pellicle film 2a.
(氣體置換步驟) 氣體置換步驟中，為了於成膜步驟後將護膜空間5內之剩餘之原料氣體排出，將剩餘之原料氣體置換為其他氣體(置換氣體)。藉此，可抑制無用之膜沈積於光罩1之主表面。(Gas replacement step) In the gas replacement step, in order to discharge the remaining raw material gas in the pellicle space 5 after the film forming step, the remaining raw material gas is replaced with other gases (replacing gas). Thereby, useless films can be prevented from being deposited on the main surface of the photomask 1 .
藉由將置換氣體從1個或複數個護膜通氣口3導入至護膜空間5，從附近配置有開口部10之其他1個或複數個護膜通氣口3將剩餘之氣體排出。藉此，將護膜空間5內之原料氣體置換為置換氣體。By introducing the replacement gas from one or a plurality of pellicle vents 3 into the pellicle space 5, the remaining gas is discharged from one or a plurality of other pellicle vents 3 having openings 10 nearby. Thereby, the raw material gas in the pellicle space 5 is replaced with the replacement gas.
與成膜步驟同樣地，為了抑制排出之剩餘之原料氣體滯留於護膜通氣口3之出口附近，亦可從開口部10抽氣。Similar to the film forming step, in order to prevent the discharged remaining raw material gas from remaining near the outlet of the pellicle vent 3 , air may be extracted from the opening 10 .
1:光罩 1a:透明基板 1b:轉印用圖案 2:護膜 2a:護膜薄膜 2b:護膜框 3:護膜通氣口 4:缺陷部位 5:護膜空間 6:修正膜 7:夾具 7a:臂 7b:連結部 8:雷射振盪器 9:雷射光 10:開口部 15:光罩保持器 20:氣體導入管 30:雷射水平移動部 30a:上部X機械臂 30b:上部Y機械臂 30c:上部Z機械臂 35:上部XYZ機械臂控制部 40:控制單元 45:雷射位移計 50:氣體排出管 55:觀察用光學系統 60:觀察用照明 65:氣體控制部 70:原料箱 75：加熱器 80:下部X機械臂 85:下部Y機械臂 90:下部Z機械臂 100:修正裝置1: Photomask 1a:Transparent substrate 1b: Pattern for transfer 2: Protective film 2a: Protective film 2b: Protective film frame 3: Protective film vent 4: Defect parts 5: Protective film space 6: Correction film 7: Fixture 7a: arm 7b: Connection Department 8:Laser oscillator 9:Laser light 10:Opening part 15:Mask holder 20:Gas introduction pipe 30: Laser horizontal moving part 30a: Upper X robotic arm 30b: Upper Y robotic arm 30c: Upper Z robotic arm 35: Upper XYZ robot arm control part 40:Control unit 45:Laser Displacement Meter 50:Gas discharge pipe 55: Optical system for observation 60: Lighting for observation 65:Gas Control Department 70: Raw material box 75: heater 80: Lower X robotic arm 85:Lower Y robotic arm 90:Lower Z robotic arm 100: Correction device
圖1係表示本發明之一實施形態之光罩之修正方法之概要之說明圖，圖1(a)係表示對缺陷部位照射雷射光之狀態之概略圖，圖1(b)係表示照射雷射光之後，修正膜沈積於缺陷部位之狀態之概略圖。 圖2係表示本發明之一實施形態之光罩之修正裝置之臂夾持護膜框之狀態的概略圖。 圖3係例示本發明之一實施形態之光罩之修正裝置之概要的結構圖。FIG. 1 is an explanatory diagram showing an outline of a mask correction method according to an embodiment of the present invention. FIG. 1(a) is a schematic diagram showing a state in which a defective part is irradiated with laser light. FIG. 1(b) is a diagram illustrating irradiation with laser light. A schematic diagram showing the state in which a correction film is deposited on a defective area after irradiation. FIG. 2 is a schematic diagram showing a state in which the arms of the photomask correction device clamp the pellicle frame according to one embodiment of the present invention. FIG. 3 is a structural diagram illustrating an outline of a mask correction device according to an embodiment of the present invention.
1:光罩 1: Photomask
1a:透明基板 1a:Transparent substrate
1b:轉印用圖案 1b: Pattern for transfer
2:護膜 2: Protective film
2a:護膜薄膜 2a: Protective film
2b:護膜框 2b: Protective film frame
3:護膜通氣口 3: Protective film vent
4:缺陷部位 4: Defect parts
5:護膜空間 5: Protective film space
6:修正膜 6: Correction film
7:夾具 7: Fixture
8:雷射振盪器 8:Laser oscillator
9:雷射光 9:Laser light
75:加熱器 75:Heater
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- 2020-02-14 TW TW109104654A patent/TWI829862B/en active
- 2020-02-28 KR KR1020200025101A patent/KR20200106837A/en active Search and Examination
- 2020-03-04 CN CN202010143020.XA patent/CN111665681A/en active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202041966A (en) | 2020-11-16 |
| JP7361622B2 (en) | 2023-10-16 |
| JP2020149046A (en) | 2020-09-17 |
| CN111665681A (en) | 2020-09-15 |
| KR20200106837A (en) | 2020-09-15 |
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