TWI827613B - Display apparatus with array of light emitting diodes and method of manufacturing the same - Google Patents
Display apparatus with array of light emitting diodes and method of manufacturing the same Download PDFInfo
- Publication number
- TWI827613B TWI827613B TW108119854A TW108119854A TWI827613B TW I827613 B TWI827613 B TW I827613B TW 108119854 A TW108119854 A TW 108119854A TW 108119854 A TW108119854 A TW 108119854A TW I827613 B TWI827613 B TW I827613B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- semiconductor layer
- emitting diode
- substrate
- diode array
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 40
- 239000010410 layer Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000012790 adhesive layer Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 72
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 238000006243 chemical reaction Methods 0.000 claims description 56
- 230000001070 adhesive effect Effects 0.000 claims description 28
- 239000000853 adhesive Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000002096 quantum dot Substances 0.000 description 12
- 239000011135 tin Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004634 thermosetting polymer Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- -1 electrode settings Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 208000032366 Oversensing Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 150000003553 thiiranes Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
Description
本發明是有關於一種顯示器及其製造方法，且特別是有關於一種具有發光二極體陣列之顯示器及其製造方法。 The present invention relates to a display and a manufacturing method thereof, and in particular to a display having a light emitting diode array and a manufacturing method thereof.
隨著發光二極體(LED)技術的成熟與演進，直接利用LED達到自發光顯示畫素的全彩LED顯示器或微型(Micro)LED顯示器的技術也正蓬勃發展中，其應用領域相較於TFT-LCD更為廣泛，包含軟性、透明顯示器，為一可行性高的次世代平面顯示器技術。然而在商業化上，仍有不少的成本與技術瓶頸存在，亟待克服。例如，已知之一主動式發光二極體陣列之顯示器，利用於電極上製作接點(bumps)來電性連接一驅動基板與一發光二極體陣列。然而，此連接方式不但製程困難，接點與發光二極體的電極之間的對位也不容易。再者沒有底材支撐於驅動基板與發光二極體陣列之間，因此用以形成發光二極體陣列的基板(例如藍寶石基板)無法移除。而基板的存在會影響像素之間光訊號，造成互相干擾(cross-talk)，影響顯示品質。 With the maturity and evolution of light-emitting diode (LED) technology, the technology of full-color LED displays or micro LED displays that directly use LEDs to achieve self-luminous display pixels is also booming. Its application fields are compared with TFT-LCD is more extensive, including soft and transparent displays, and is a highly feasible next-generation flat display technology. However, in terms of commercialization, there are still many cost and technical bottlenecks that need to be overcome. For example, a known active light-emitting diode array display utilizes bumps formed on electrodes to electrically connect a driving substrate and a light-emitting diode array. However, this connection method is not only difficult to manufacture, but also difficult to align the contacts with the electrodes of the light-emitting diodes. Furthermore, there is no substrate supported between the driving substrate and the LED array, so the substrate (eg, sapphire substrate) used to form the LED array cannot be removed. The existence of the substrate will affect the optical signals between pixels, causing cross-talk and affecting the display quality.
本發明係有關於一種具有發光二極體陣列之顯示器及其製造方法，實施例中，利用於一驅動基板和一發光二極體陣列之間形成黏結層，使原先用以形成發光二極體陣列的長晶基板可以在設置黏結層之後移除，因而解決像素之間光訊號互相干擾的問題。 The present invention relates to a display with a light-emitting diode array and a manufacturing method thereof. In the embodiment, an adhesive layer is formed between a driving substrate and a light-emitting diode array, so that the light-emitting diode originally formed can be The long crystal substrate of the array can be removed after the adhesive layer is set, thus solving the problem of mutual interference of optical signals between pixels.
根據一實施例，係提出一種顯示器，包括具有複數個電控元件之一基板；一發光二極體陣列(LED array)，包括一半導體層和複數個發光單元形成於半導體層下；形成於半導體層下之複數個第一電極；形成於基板和發光二極體陣列之間的一黏結層；和複數個波長轉換元件，形成於半導體層上並與發光單元位於半導體層的不同側，波長轉換元件的位置與發光單元之位置相對應，其中波長轉換元件係彼此相距一距離。 According to one embodiment, a display is proposed, including a substrate with a plurality of electronic control components; a light-emitting diode array (LED array) including a semiconductor layer and a plurality of light-emitting units formed under the semiconductor layer; formed on the semiconductor layer A plurality of first electrodes under the layer; an adhesive layer formed between the substrate and the light-emitting diode array; and a plurality of wavelength conversion elements formed on the semiconductor layer and located on different sides of the semiconductor layer from the light-emitting unit, wavelength conversion The position of the element corresponds to the position of the light-emitting unit, and the wavelength conversion elements are spaced apart from each other.
根據一實施例，係提出一種顯示器，包括：具有複數個電控元件之一基板；一發光二極體陣列(LED array)，包括一半導體層和複數個發光單元形成於半導體層下；形成於半導體層下之複數個第一電極；和一黏結層，包括一黏結材料和複數個連接金屬位於黏結材料中，黏結材料填充於基板和發光二極體陣列之間，連接金屬包括：分別對應發光單元的多個第一部份，和對應於第一電極之至少一部分的多個第二部份，其中，該些第一部份之高度係不同於該些第二部份之高度。 According to one embodiment, a display is proposed, including: a substrate with a plurality of electrical control components; a light emitting diode array (LED array) including a semiconductor layer and a plurality of light emitting units formed under the semiconductor layer; formed on A plurality of first electrodes under the semiconductor layer; and an adhesive layer, including an adhesive material and a plurality of connection metals located in the adhesive material, the adhesive material is filled between the substrate and the light-emitting diode array, and the connection metals include: respectively corresponding to the light emitting A plurality of first parts of the unit, and a plurality of second parts corresponding to at least a part of the first electrode, wherein the heights of the first parts are different from the heights of the second parts.
根據一實施例，係提出一種顯示器之製造方法，包括：提供一基板，基板具有複數個電控元件；形成複數個連接 導體於基板上，其中連接導體包括複數個第一部份和複數個第二部份；提供一發光二極體陣列，此發光二極體陣列包括一半導體層和複數個發光單元形成於半導體層下；對組發光二極體陣列和基板；形成一黏結層於基板和發光二極體陣列之間；和形成複數個波長轉換元件於半導體層上，且波長轉換元件與發光單元位於該半導體層的不同側，其中波長轉換元件的位置與發光單元之位置相對應，且波長轉換元件係彼此相距一距離。而前述形成黏結層的步驟可以在對組發光二極體陣列和基板的步驟之前或之後進行。 According to one embodiment, a method for manufacturing a display is proposed, including: providing a substrate with a plurality of electrical control components; forming a plurality of connections A conductor is provided on the substrate, wherein the connecting conductor includes a plurality of first parts and a plurality of second parts; a light-emitting diode array is provided, and the light-emitting diode array includes a semiconductor layer and a plurality of light-emitting units formed on the semiconductor layer Bottom; Assemble the light-emitting diode array and the substrate; form an adhesive layer between the substrate and the light-emitting diode array; and form a plurality of wavelength conversion elements on the semiconductor layer, and the wavelength conversion element and the light-emitting unit are located on the semiconductor layer On different sides, the position of the wavelength conversion element corresponds to the position of the light-emitting unit, and the wavelength conversion elements are separated from each other by a distance. The aforementioned step of forming an adhesive layer may be performed before or after the step of assembling the light-emitting diode array and the substrate.
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下： In order to have a better understanding of the above and other aspects of the present invention, examples are given below and are described in detail with reference to the accompanying drawings:
21:基板 21:Substrate
22:接墊 22: Pad
221:第一控制接墊 221: First control pad
222:第二控制接墊 222: Second control pad
31:發光二極體陣列 31: Light emitting diode array
LU:發光單元 LU: light emitting unit
310:長晶基板 310:Growing crystal substrate
311、313:半導體層 311, 313: Semiconductor layer
311a:第一表面 311a: first surface
311b:第二表面 311b: Second surface
313a:第二導電型半導體層之表面 313a: Surface of the second conductive type semiconductor layer
312:活性疊層 312:Active stack
315:絕緣層 315:Insulation layer
316:第一電極 316:First electrode
316P:導電接墊 316P: Conductive pad
316C:連接部 316C:Connection part
3161、3162:走線 3161, 3162: wiring
317:第二電極 317: Second electrode
40、50:黏結層 40, 50: Adhesive layer
41、51:黏結材料 41, 51: Adhesive materials
42、52:連接金屬 42, 52: Connecting metal
421、521:第一部份 421, 521: Part 1
422、522:第二部份 422, 522: Part 2
d1:第一部份之高度 d1: height of the first part
d2、d2’:第二部份之高度 d2, d2’: height of the second part
45:波長轉換元件 45:Wavelength conversion element
45R:紅色波長轉換元件 45R: Red wavelength conversion element
45G:綠色波長轉換元件 45G: Green wavelength conversion element
45B:藍色波長轉換元件 45B: Blue wavelength conversion element
46:防水層 46:Waterproof layer
410:非導電膠體 410: Non-conductive colloid
420:導電粒子 420: Conductive particles
PR:光阻 PR: Photoresist
PR’:圖案化光阻 PR’: Patterned photoresist
OM:不透明材料 OM: Opaque material
第1圖係繪示根據本發明一實施例之一種發光二極體陣列與電極之上視圖。 Figure 1 is a top view of a light-emitting diode array and electrodes according to an embodiment of the present invention.
第2圖為本發明一實施例之顯示器之剖面示意圖，其發光二極體陣列與電極係沿第1圖之剖面線2-2所繪示。 Figure 2 is a schematic cross-sectional view of a display according to an embodiment of the present invention. The light-emitting diode array and electrodes are shown along the section line 2-2 in Figure 1.
第3A-3E圖係繪示本發明一實施例之顯示器的製作方法。 Figures 3A-3E illustrate a method of manufacturing a display according to an embodiment of the present invention.
第4A-4C圖繪示本發明一實施例中一波長轉換元件的其中一種製法示例。 Figures 4A-4C illustrate an example of a manufacturing method of a wavelength conversion element according to an embodiment of the present invention.
第5圖係為本發明另一實施例之顯示器之剖面示意圖。 Figure 5 is a schematic cross-sectional view of a display according to another embodiment of the present invention.
第6圖係為本發明又一實施例之顯示器之剖面示意圖。 Figure 6 is a schematic cross-sectional view of a display according to another embodiment of the present invention.
第7圖係為本發明再一實施例之顯示器之剖面示意圖。 Figure 7 is a schematic cross-sectional view of a display according to yet another embodiment of the present invention.
第8A、8B圖係繪示本發明一實施例之一接合製程。 Figures 8A and 8B illustrate a bonding process according to an embodiment of the present invention.
第9圖係繪示本發明另一實施例之顯示器的剖面示意圖。 Figure 9 is a schematic cross-sectional view of a display according to another embodiment of the present invention.
第10A-10F圖係繪示如第9圖所示之顯示器的其中一種製法。 Figures 10A-10F illustrate one of the manufacturing methods of the display shown in Figure 9.
第11A-11G圖係繪示如第9圖所示之顯示器的其中另一種製法。 Figures 11A-11G illustrate another method of manufacturing the display shown in Figure 9.
第12圖係繪示根據本發明另一實施例之發光二極體陣列與電極之上視圖。 Figure 12 is a top view of a light emitting diode array and electrodes according to another embodiment of the present invention.
第13圖為本發明一實施例之顯示器之剖面示意圖，其發光二極體陣列與電極係沿第12圖之剖面線13-13所繪示。 Figure 13 is a schematic cross-sectional view of a display according to an embodiment of the present invention. The light-emitting diode array and electrodes are shown along the section line 13-13 in Figure 12.
在此揭露內容之實施例中，係提出具有發光二極體陣列之顯示器及其製造方法，利用於一驅動基板(例如CMOS基板)和一發光二極體陣列之間形成黏結層，黏結層包括連接金屬和黏結材料，連接金屬可以提供驅動基板和發光二極體陣列之間的電性連接，而黏結材料則填充於驅動基板和發光二極體陣列之間的空隙並提供支撐。因此，於實施例之顯示器中，原先用以形成發光二極體陣列的長晶基板(例如藍寶石基板)可以在設置黏結層之後移除，而後若依應用需求，可在半導體層上不同於發光單元所在的表面上形成波長轉換層(例如包括量子點螢光粉之波 長轉換元件)，完成全彩化。因此，相較於傳統結構，實施例所提出之顯示器不但具有黏結材料可以提供驅動基板和發光二極體陣列之間的支撐力，提升整體結構的穩定度(reliability)。由於移除了長晶基板，除了可以減少顯示器的整體厚度，亦可增加顯示器之可撓性，使應用更為廣泛。若應用於微型發光二極體陣列製造(例如各微型發光二極體係相應於一子像素)，則如實施例提出之沒有長晶基板的顯示器結構可以避免子像素之間光訊號互相干擾(cross talk)。再者，實施例所提出之製造方法，可以適用於電極水平位置(/水平高度)相同或不同的發光二極體(特別是N電極與P電極有不同水平位置/水平高度)與驅動基板之間的充填與電性導通，而黏結層中連接金屬與黏結材料之形成也不會對結構中的相關層和組件造成損傷，也毋須採用耗時且昂貴的製造程序，因此實施例提出之結構與製法實適合量產。 In an embodiment of this disclosure, a display with a light-emitting diode array and a manufacturing method thereof are proposed. An adhesive layer is formed between a driving substrate (such as a CMOS substrate) and a light-emitting diode array. The adhesive layer includes Connecting metal and bonding material. The connecting metal can provide electrical connection between the driving substrate and the light-emitting diode array, while the bonding material fills the gap between the driving substrate and the light-emitting diode array and provides support. Therefore, in the display of the embodiment, the long crystal substrate (such as sapphire substrate) originally used to form the light-emitting diode array can be removed after the adhesive layer is provided, and then according to the application requirements, different light-emitting materials can be added on the semiconductor layer. A wavelength conversion layer (for example, including quantum dot phosphor) is formed on the surface on which the unit is located. long conversion element) to achieve full color. Therefore, compared with the traditional structure, the display proposed in the embodiment not only has an adhesive material that can provide support between the driving substrate and the light-emitting diode array, thereby improving the stability (reliability) of the overall structure. Since the long crystal substrate is removed, the overall thickness of the display can be reduced and the flexibility of the display can be increased, making it more widely used. If applied to the manufacture of micro light-emitting diode arrays (for example, each micro light-emitting diode system corresponds to a sub-pixel), the display structure without a growing crystal substrate as proposed in the embodiment can avoid cross-interference of optical signals between sub-pixels. talk). Furthermore, the manufacturing method proposed in the embodiment can be applied to the combination of light-emitting diodes with the same or different electrode horizontal positions (/horizontal heights) (especially N electrodes and P electrodes with different horizontal positions/horizontal heights) and driving substrates. The filling and electrical conduction between them, and the formation of the connecting metal and adhesive material in the adhesive layer will not cause damage to the relevant layers and components in the structure, and there is no need to use time-consuming and expensive manufacturing processes. Therefore, the structure proposed in the embodiment The manufacturing method is suitable for mass production.
此揭露內容之實施例其應用十分廣泛，以下實施例係以具有微型發光二極體陣列(micro-LED array)之顯示器做舉例說明，但本揭露並不以該些態樣為限。以下係提出相關實施例，配合圖示以詳細說明本揭露所提出之顯示器之相關結構及其製造方法。再者，實施例中相同或類似的標號係用以標示相同或類似之部分，以利清楚說明。然而所提出的實施態樣之敘述，如細部結構、製程步驟和材料應用等等，僅為舉例說明之用，本揭露欲保護之範圍並非僅限於所述之態樣。本揭露並非顯示出所有可能的實施例，相關領域者可在不脫離本揭露之精神和範圍內對 實施例之結構和製程加以變化與修飾，以符合實際應用所需。因此，未於本揭露提出的其他實施態樣也可能可以應用。再者，圖式係已簡化以利清楚說明實施例之內容，圖式上的尺寸比例並非按照實際產品等比例繪製。因此，說明書和圖示內容僅作敘述實施例之用，而非作為限縮本揭露保護範圍之用。 The embodiments of this disclosure have very wide applications. The following embodiments take a display with a micro-LED array as an example, but the disclosure is not limited to these aspects. Relevant embodiments are presented below, and the related structures and manufacturing methods of the display proposed in the present disclosure are described in detail with illustrations. Furthermore, the same or similar reference numerals in the embodiments are used to identify the same or similar parts to facilitate clear description. However, the descriptions of the proposed implementation aspects, such as detailed structures, process steps, material applications, etc., are only for illustration, and the scope of protection of the present disclosure is not limited to the described aspects. This disclosure does not illustrate all possible embodiments, and those skilled in the art may make various modifications without departing from the spirit and scope of this disclosure. The structures and manufacturing processes of the embodiments are subject to changes and modifications to meet the requirements of actual applications. Therefore, other implementation aspects not proposed in this disclosure may also be applicable. Furthermore, the drawings have been simplified to clearly illustrate the contents of the embodiments, and the dimensional proportions in the drawings are not drawn to the same proportions as the actual products. Therefore, the description and illustrations are only used to describe the embodiments and are not used to limit the scope of the present disclosure.
再者，說明書與請求項中所使用的序數例如”第一”、”第二”...等之用詞，是為了修飾請求項之元件，其本身並不意含及代表該請求元件有任何之前的序數，也不代表某一請求元件與另一請求元件的順序、或是製造方法上的順序，該些序數的使用僅用來使具有某命名的一請求元件得以和另一具有相同命名的請求元件能作出清楚區分。另外，當述及一第一材料層位於一第二材料層上、之上或上方時，除非特別定義，否則可包括第一材料層與第二材料層直接接觸之情形。或者，亦可能間隔有一或更多其它材料層之情形，在此情形中，第一材料層與第二材料層之間可能不直接接觸。 Furthermore, the ordinal numbers used in the description and claims, such as “first”, “second”, etc., are used to modify the elements of the claim and do not in themselves imply or represent that the claim element has any The previous ordinal numbers do not represent the order between a certain requested component and another requested component, or the order in the manufacturing method. The use of these ordinal numbers is only used to enable one requested component with a certain name to have the same name as another requested component. The request components can be clearly distinguished. In addition, when it is mentioned that a first material layer is located on, on or above a second material layer, unless otherwise specified, it may include the situation where the first material layer and the second material layer are in direct contact. Alternatively, one or more other material layers may be separated, in which case the first material layer and the second material layer may not be in direct contact.
第1圖係繪示根據本發明一實施例之一種發光二極體陣列與電極之上視圖。於此實施例中，係提出如矩陣排列之一發光二極體陣列，例如是但不限於是微型發光二極體陣列(micro-LED array)，如圖中所示之多個發光單元LU，並將N電極製作為一金屬網格(n-metal grid)為一示例；N電極例如包括：位於發光二極體陣列之外圍的多個導電接墊316P(例如N接墊，第1圖中以4個導電接墊316P為例，但並不限制於此)以及 位於相鄰發光單元LU之間的複數個延伸部，包括沿著第一方向D1(例如X方向)延伸之金屬走線3161，和沿著第二方向D2(例如Y方向)上延伸之金屬走線3162，且該些延伸部係電性連接至相應的導電接墊316P。網格狀的N電極可以降低串連電阻值，並使各像素電流路徑的串連電阻值達到接近一致。但本揭露並不以此N電極態樣為限制。 Figure 1 is a top view of a light-emitting diode array and electrodes according to an embodiment of the present invention. In this embodiment, a light-emitting diode array arranged in a matrix is proposed, such as but not limited to a micro-LED array, with a plurality of light-emitting units LU as shown in the figure. And the N electrode is made into a metal grid (n-metal grid) as an example; the N electrode includes, for example: a plurality of conductive pads 316P located on the periphery of the light-emitting diode array (such as N pads, in Figure 1 Taking 4 conductive pads 316P as an example, but not limited to this) and A plurality of extension portions located between adjacent light-emitting units LU include metal traces 3161 extending along the first direction D1 (for example, the X direction), and metal traces 3161 extending along the second direction D2 (for example, the Y direction). Lines 3162, and these extensions are electrically connected to corresponding conductive pads 316P. The grid-shaped N electrode can reduce the series resistance value and make the series resistance value of each pixel current path nearly consistent. However, the present disclosure is not limited to this N electrode configuration.
另外，於實際製作時，此發光二極體陣列可以是從含有發光二極體之晶圓(LED wafer)切割出來，例如欲製作出1K*1K的發光二極體陣列時，就需要在陣列的兩個方向上各擺放上1000顆LED；切割後再與一驅動基板(例如一CMOS基板)對接。當然，本揭露並不限制於此，於另一製作例中，亦可整片具有發光二極體之晶圓(LED wafer)和驅動基板(例如CMOS基板)對接。第1圖中發光二極體陣列之外圍，如四個角落處係形成有例如十字形之對準記號(alignment marks)，供驅動基板與具有發光二極體之晶圓對接時作為對準之用；於此示例中，對準記號例如是(但不限制地)形成於鄰近導電接墊316P之末端處。 In addition, during actual production, the light-emitting diode array can be cut from a wafer containing light-emitting diodes (LED wafer). For example, if you want to produce a 1K*1K light-emitting diode array, you need to 1,000 LEDs are placed in each of the two directions; after cutting, they are connected to a driving substrate (such as a CMOS substrate). Of course, the present disclosure is not limited to this. In another manufacturing example, a whole wafer (LED wafer) with light-emitting diodes can also be connected to a driving substrate (such as a CMOS substrate). In Figure 1, alignment marks such as crosses are formed on the periphery of the light-emitting diode array, such as the four corners, for alignment when the driving substrate is connected to the wafer with light-emitting diodes. In this example, the alignment mark is, for example, but not limited to, formed adjacent to an end of the conductive pad 316P.
第2圖為本發明一實施例之顯示器之剖面示意圖，其發光二極體陣列與電極係沿第1圖之剖面線2-2所繪示。實施例之一顯示器包括一發光二極體陣列(LED array)31，與具有多個電控元件之一基板21接合而成。基板21例如是一互補式金氧半導體背板(CMOS backplane)或任何具有控制電路之基 板，與發光二極體陣列電性連接後可控制各像素之電流。發光二極體陣列31具有一半導體層311和複數個發光單元LU形成於半導體層311上；且複數個第一電極316，例如N電極(N electrodes)係形成於半導體層311上。實施例之顯示器更包括一黏結層40形成於基板21和發光二極體陣列31之間。如第2圖所示，黏結層40包括一黏結材料41(例如非導電膠體)和複數個連接金屬42位於黏結材料41中，黏結材料41係填滿基板21和發光二極體陣列31之間的空隙，可提供基板21和發光二極體陣列31接合後之支撐力，並可適當阻隔水氣侵蝕電極與進入發光二極體之材料層中。 Figure 2 is a schematic cross-sectional view of a display according to an embodiment of the present invention. The light-emitting diode array and electrodes are shown along the section line 2-2 in Figure 1. The display of one embodiment includes a light emitting diode array (LED array) 31 bonded to a substrate 21 having a plurality of electronic control components. The substrate 21 is, for example, a complementary metal oxide semiconductor backplane (CMOS backplane) or any substrate with a control circuit. The board is electrically connected to the light-emitting diode array to control the current of each pixel. The light-emitting diode array 31 has a semiconductor layer 311 and a plurality of light-emitting units LU formed on the semiconductor layer 311; and a plurality of first electrodes 316, such as N electrodes, are formed on the semiconductor layer 311. The display of the embodiment further includes an adhesive layer 40 formed between the substrate 21 and the light emitting diode array 31 . As shown in FIG. 2 , the adhesive layer 40 includes an adhesive material 41 (such as non-conductive colloid) and a plurality of connecting metals 42 located in the adhesive material 41 . The adhesive material 41 is filled between the substrate 21 and the light-emitting diode array 31 The gap can provide supporting force after the substrate 21 and the light-emitting diode array 31 are joined, and can appropriately prevent water vapor from eroding the electrodes and entering the material layer of the light-emitting diode.
於實施例中，連接金屬42可包括與發光單元LU相對應之第一部份421，以及與第一電極316之至少一部分相對應之第二部份422。如第2圖所示，連接金屬42包括複數個第一部份421分別對應於發光單元LU，以及複數個第二部份422係對應第一電極316中位於發光二極體陣列31外圍的導電接墊316P。亦即，連接金屬42之第二部份422係對應導電接墊316P。其中，第一部份421之高度d1係不同於第二部份422之高度d2。 In an embodiment, the connection metal 42 may include a first portion 421 corresponding to the light-emitting unit LU, and a second portion 422 corresponding to at least a portion of the first electrode 316 . As shown in FIG. 2 , the connecting metal 42 includes a plurality of first parts 421 corresponding to the light-emitting units LU, and a plurality of second parts 422 corresponding to the conductive portions of the first electrode 316 located on the periphery of the light-emitting diode array 31 . Pad 316P. That is, the second portion 422 of the connecting metal 42 corresponds to the conductive pad 316P. Among them, the height d1 of the first part 421 is different from the height d2 of the second part 422.
再者，實施例之顯示器更包括複數個第二電極317，例如P電極(P electrodes)分別形成於各發光單元LU上，其中連接金屬42之第一部份421係連接於第二電極317。於此微型發光二極體陣列之示例中，P電極(例如第二電極317) 係形成於各發光單元LU，而N電極(例如第一電極316)則為複數個發光單元LU所共用。第一電極316與第二電極317的材料可以為透明導電材料或金屬材料。透明導電材料包括但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化錫鋅(ZTO)，氧化鎵鋅(GZO)、氧化銦鎢(IWO)、氧化鋅(ZnO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)、砷化鎵磷化物(GaAsP)、氧化銦鋅(IZO)、和類金剛石碳(DLC)。金屬材料包括但不限於鋁(Al)、鉻(Cr)、銅(Cu)、錫(Sn)、金(Au)、鎳(Ni)、鈦(Ti)、鉑(Pt)、鉛(Pb)、鋅(Zn)、鎘(Cd)、銻(Sb)、鈷(Co)、以及包含上述的合金。 Furthermore, the display of the embodiment further includes a plurality of second electrodes 317, such as P electrodes, respectively formed on each light-emitting unit LU, in which the first portion 421 of the connecting metal 42 is connected to the second electrodes 317. In this example of a micro light emitting diode array, the P electrode (eg second electrode 317) is formed in each light-emitting unit LU, and the N electrode (such as the first electrode 316) is shared by a plurality of light-emitting units LU. The material of the first electrode 316 and the second electrode 317 may be a transparent conductive material or a metal material. Transparent conductive materials include but are not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), tin zinc oxide (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide ( GaAs), gallium arsenide phosphide (GaAsP), indium zinc oxide (IZO), and diamond-like carbon (DLC). Metal materials include but are not limited to aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb) , zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co), and alloys containing the above.
於此示例中，基板21(具有控制電路)上例如具有複數個接墊22。黏結層40之連接金屬42的另一端係與基板21上的接墊22連接。如第2圖所示，基板21之接墊可包括複數個第一控制接墊221和複數個第二控制接墊222，其中連接金屬42之各第一部份421係分別電性連接第一控制接墊221和第二電極(例如P電極)317，連接金屬42之各第二部份422係分別電性連接第二控制接墊222和位於發光二極體陣列31外圍之導電接墊316P(亦即第一電極316，例如N電極)。於此示例中，導電接墊316P上例如還有連接部316C(connecting portion)，所以連接金屬42之第二部份422例如是透過連接部316C而與導電接墊316P(亦即第一電極316)電性連接。再者，於此示例 中，連接部316C的厚度可以等於或是不等於第二電極317的厚度；例如第2圖所示，連接部316C的厚度係略大於第二電極317的厚度，但本揭露對此並不特別限制。 In this example, the substrate 21 (having a control circuit) has, for example, a plurality of contact pads 22 . The other end of the connecting metal 42 of the adhesive layer 40 is connected to the pad 22 on the substrate 21 . As shown in FIG. 2 , the pads of the substrate 21 may include a plurality of first control pads 221 and a plurality of second control pads 222 , in which each first portion 421 of the connecting metal 42 is electrically connected to the first control pad 221 respectively. The control pad 221 and the second electrode (such as P electrode) 317, and each second portion 422 of the connecting metal 42 are electrically connected to the second control pad 222 and the conductive pad 316P located on the periphery of the light-emitting diode array 31 respectively. (That is, the first electrode 316, such as the N electrode). In this example, the conductive pad 316P also has a connecting portion 316C, for example, so the second portion 422 of the connecting metal 42 is connected to the conductive pad 316P (that is, the first electrode 316) through the connecting portion 316C. ) electrical connection. Again, in this example , the thickness of the connecting portion 316C may be equal to or not equal to the thickness of the second electrode 317; for example, as shown in Figure 2, the thickness of the connecting portion 316C is slightly larger than the thickness of the second electrode 317, but this disclosure is not special. limit.
另外，於此示例中，第一電極316如導電接墊316P的水平位置與第二電極317的水平位置不同(例如導電接墊316P的水平位置更接近半導體層311)，而導電接墊316P上的連接部316C亦比第二電極317更接近半導體層311，因此如第2圖所示之黏結層40中，連接金屬42的第一部份421之高度d1係小於第二部份422之高度d2。不過，實施例中可應用之發光二極體的電極設置態樣並不僅限於此第2圖之示例，連接金屬42的第一部份421之高度d1與第二部份422之高度d2會受到實際應用時電極配置與相關層厚度之變化而有所調整，而本揭露之實施例實際上係適用高度d1與d2不同甚至相同的任何結構態樣。再者，雖然於此實施例中係以形成連接部316C為例做說明，但於其他實施例中，第一電極上(例如導電接墊316P上)，亦可能不具有連接部316C，本揭露對此並不多做限制。 In addition, in this example, the horizontal position of the first electrode 316 such as the conductive pad 316P is different from the horizontal position of the second electrode 317 (for example, the horizontal position of the conductive pad 316P is closer to the semiconductor layer 311), and the conductive pad 316P is The connecting portion 316C is also closer to the semiconductor layer 311 than the second electrode 317. Therefore, in the adhesive layer 40 shown in Figure 2, the height d1 of the first portion 421 of the connecting metal 42 is smaller than the height of the second portion 422. d2. However, the electrode arrangement of the light-emitting diode that can be applied in the embodiment is not limited to the example in Figure 2. The height d1 of the first part 421 and the height d2 of the second part 422 of the connecting metal 42 will be affected by In actual applications, the electrode configuration and the thickness of the related layers may be adjusted, and the embodiments of the present disclosure are actually applicable to any structural form with different or even the same heights d1 and d2. Furthermore, although in this embodiment, the formation of the connection portion 316C is taken as an example for explanation, in other embodiments, the first electrode (such as the conductive pad 316P) may not have the connection portion 316C. This disclosure There are not many restrictions on this.
再者，實施例中可應用之發光二極體結構態樣，包括相關半導體層與量子井層之層數與配置、電極設置、各層材料以及材料激發後所發出之光色等等，本揭露並不多做限制，第2圖僅簡單繪示其中一種可應用之發光二極體的結構態樣。如第2圖所示，一示例之半導體層311例如是一第一導電型半導體層，而各發光單元LU係包括一活性疊層312(例如多重量子井 (Multiple Quantum Well，MQW)和一第二導電型半導體層313形成於活性疊層312上，其中第二電極317係分別形成於各發光單元LU之第二導電型半導體層313上。於一示例中，第一導電型和第二導電型例如分別是N型和P型。 Furthermore, the light-emitting diode structure that can be applied in the embodiments includes the number and configuration of the relevant semiconductor layers and quantum well layers, electrode settings, materials of each layer, and the color of light emitted after the material is excited, etc., the present disclosure Without further limitation, Figure 2 simply illustrates the structure of one applicable light-emitting diode. As shown in FIG. 2 , an example of the semiconductor layer 311 is a first conductive type semiconductor layer, and each light-emitting unit LU includes an active stack 312 (such as multiple quantum wells). (Multiple Quantum Well, MQW) and a second conductive type semiconductor layer 313 are formed on the active stack 312, wherein the second electrodes 317 are respectively formed on the second conductive type semiconductor layer 313 of each light emitting unit LU. In an example, the first conductivity type and the second conductivity type are N-type and P-type respectively.
實施例中，第一導電型半導體層311和第二導電型半導體層313例如為包覆層(cladding layer)或限制層(confinement layer)，可分別提供電子、電洞，使電子、電洞於活性疊層312中結合發光。第一導電型半導體層311、活性疊層312、及第二導電型半導體層313可包含Ⅲ-V族半導體材料，例如AlxInyGa(1-x-y)N或AlxInyGa(1-x-y)P，其中0≦x、y≦1；(x+y)≦1。依據活性疊層312之材料，發光單元LU可發出一峰值介於580nm和700nm之間的紅光，峰值介於530nm及570nm之間的綠光，峰值介於450nm及490nm之間的藍光，或峰值介於380nm及420nm之間，例如是400nm的UV光。於一示例中，第一導電型半導體層311係為N-GaN，活性疊層312係為多重量子井(MQW)，一第二導電型半導體層313係為P-GaN，各發光單元LU發出峰值介於450nm及490nm之間的藍光，之後可透過波長轉換元件例如包括量子點螢光粉(Quantum dot phosphors，QD phosphors)之紅色波長轉換元件和綠色波長轉換元件的設置，完成全彩化。 In embodiments, the first conductive type semiconductor layer 311 and the second conductive type semiconductor layer 313 are, for example, cladding layers or confinement layers, which can provide electrons and holes respectively, so that electrons and holes can be Emission is incorporated into the active stack 312 . The first conductive type semiconductor layer 311, the active stack 312, and the second conductive type semiconductor layer 313 may include III-V group semiconductor materials, such as Al x In y Ga (1-xy) N or Al x In y Ga (1 -xy) P, where 0≦x, y≦1; (x+y)≦1. Depending on the material of the active stack 312, the light-emitting unit LU can emit red light with a peak between 580nm and 700nm, green light with a peak between 530nm and 570nm, blue light with a peak between 450nm and 490nm, or The peak value is between 380nm and 420nm, such as 400nm UV light. In one example, the first conductive type semiconductor layer 311 is N-GaN, the active stack 312 is a multiple quantum well (MQW), a second conductive type semiconductor layer 313 is P-GaN, and each light-emitting unit LU emits The blue light with a peak between 450nm and 490nm can then be converted into full color through the installation of wavelength conversion elements such as red wavelength conversion elements and green wavelength conversion elements including quantum dot phosphors (QD phosphors).
再者，於一示例中，顯示器更包括一絕緣層315覆蓋半導體層311和發光單元LU，且絕緣層315暴露出各發光 單元LU之第二導電型半導體層313的部分表面313a，各第二電極317(例如P電極)係形成於表面313a上與第二導電型半導體層313接觸，其中黏結層40之連接金屬42的第一部份421係分別連接各發光單元LU的第二電極317，如第2圖所示。 Furthermore, in an example, the display further includes an insulating layer 315 covering the semiconductor layer 311 and the light-emitting unit LU, and the insulating layer 315 exposes each light-emitting unit LU. On a portion of the surface 313a of the second conductive type semiconductor layer 313 of the unit LU, each second electrode 317 (such as a P electrode) is formed on the surface 313a to contact the second conductive type semiconductor layer 313, in which the connecting metal 42 of the adhesive layer 40 The first part 421 is connected to the second electrode 317 of each light-emitting unit LU respectively, as shown in FIG. 2 .
根據本揭露提出之實施例，除了黏結層40中的連接金屬42可提供基板21和發光二極體陣列31之間的電性連接，黏結層40中的黏結材料41則填充於基板21和發光二極體陣列31之間的空隙以提供支撐，因此，原先用以形成發光二極體陣列的長晶基板(例如藍寶石基板)可以在形成黏結層40後(包括形成連接金屬42)移除，而後可於半導體層311上不同於發光單元LU所在的表面上形成波長轉換元件45，例如量子點螢光粉(QD phosphors)，以完成全彩化。以下係提出一種顯示器之製作方法，以作示例說明。 According to the embodiment of the present disclosure, in addition to the connection metal 42 in the adhesive layer 40 providing electrical connection between the substrate 21 and the light-emitting diode array 31, the adhesive material 41 in the adhesive layer 40 is filled in the substrate 21 and the light-emitting diode array 31. The gaps between the diode arrays 31 provide support. Therefore, the long crystal substrate (such as a sapphire substrate) originally used to form the light-emitting diode array can be removed after the bonding layer 40 is formed (including the formation of the connecting metal 42). Then, a wavelength conversion element 45, such as quantum dot phosphors (QD phosphors), can be formed on the surface of the semiconductor layer 311 that is different from the surface where the light-emitting unit LU is located, to achieve full colorization. The following is a method of manufacturing a display as an example.
第3A-3E圖係繪示本發明一實施例之顯示器的製作方法。第3A-3E圖與第2圖中相同之元件係沿用相同標號，以利清楚說明。如第3A圖所示，係分別提供一基板21(例如一CMOS背板)和一發光組件(例如一LED晶圓)，發光組件包括了一長晶基板310以及如前述之發光二極體陣列31、絕緣層315、第一電極316、第二電極317。基板21與發光二極體陣列31所包括之元件配置細節，請參照上述內容，在此不贅述。於一示例中，長晶基板310例如是圖形化之一藍寶石基板，可利用例如有機金屬化學氣相沈積(metal organic chemical-vapor deposition，MOCVD)的方式生長出例如包含有氮化鎵(GaN)的磊晶層。 Figures 3A-3E illustrate a method of manufacturing a display according to an embodiment of the present invention. Components that are the same in Figures 3A-3E as in Figure 2 use the same numbers to facilitate clear explanation. As shown in Figure 3A, a substrate 21 (such as a CMOS backplane) and a light-emitting component (such as an LED wafer) are provided respectively. The light-emitting component includes a growth substrate 310 and a light-emitting diode array as mentioned above. 31. Insulating layer 315, first electrode 316, and second electrode 317. For details of the component configurations included in the substrate 21 and the light-emitting diode array 31, please refer to the above content and will not be described again here. In one example, the crystal growth substrate 310 is, for example, a patterned sapphire substrate, which can be formed using, for example, metal organic chemical-vapor deposition (metal organic chemical-vapor deposition). deposition, MOCVD) to grow an epitaxial layer including, for example, gallium nitride (GaN).
之後，形成一黏結層40，包括黏結材料41和複數個連接金屬42，於基板21和發光二極體陣列31之間，如第3B圖所示。其中，連接金屬42包括對應發光單元LU的第一部份421，以及對應第一電極例如導電接墊316P的第二部份422。連接金屬42之配置細節，請參照上述內容，在此不贅述。 After that, an adhesive layer 40 is formed, including an adhesive material 41 and a plurality of connecting metals 42, between the substrate 21 and the light-emitting diode array 31, as shown in FIG. 3B. The connection metal 42 includes a first part 421 corresponding to the light-emitting unit LU, and a second part 422 corresponding to the first electrode such as the conductive pad 316P. For the configuration details of the connecting metal 42, please refer to the above content and will not be repeated here.
基板21和包括發光二極體陣列31的發光組件(例如LED晶圓)完成接合後，黏結材料41係填充基板21和發光組件之間的空隙，以做支撐。接著，如第3C圖所示，可移除長晶基板310。一示例中，可利用雷射剝離(Laser lift-off)方式移除長晶基板310。 After the substrate 21 and the light-emitting component (such as an LED wafer) including the light-emitting diode array 31 are bonded, the adhesive material 41 fills the gap between the substrate 21 and the light-emitting component to provide support. Next, as shown in FIG. 3C , the crystal growth substrate 310 can be removed. In one example, laser lift-off can be used to remove the growth substrate 310 .
之後，如第3D圖所示，由於有黏結材料41的支撐，可在半導體層311上於不同發光單元LU所在的表面上形成波長轉換元件45，其材料例如是量子點(Quantum dot，QD，為一種高效的螢光發光晶體)。於一示例中，當QD受到短波長(高能量)的藍光激發後，會放出長波長(低能量)的光子，放出的光子具有狹窄光譜分布與可調控性峰值，可藉由控制QD的製程控制尺寸大小、調整峰值及尺寸的分布，使其具有窄光譜分布特性，因而達到轉換不同光色。例如，在發光單元LU包括藍光GaN層之示例中，可包括多個紅色波長轉換元件45R和多個 綠色波長轉換元件45G。其中一個紅色波長轉換元件45R(發出峰值介於580nm和700nm之間的紅光)設置於一個發光單元LU之上、一個綠色波長轉換元件45G(發出峰值介於530nm及570nm之間的綠光)設置於一個發光單元LU之上和沒有設置波長轉換元件於其上的一個發光單元LU(藍光GaN層發出峰值介於450nm及490nm之間的藍光)構成一個RGB像素，據此形成多個RGB像素，以完成全彩化顯示。於一示例中，半導體層311例如具有相對之第一表面311a和第二表面311b(亦即，上下表面)，其中第一表面311a係朝向基板21；而發光單元LU形成於第一表面311a上，波長轉換元件45(例如紅色波長轉換元件45R和綠色波長轉換元件45G)形成於第二表面311b上且分別與不同的發光單元LU之位置相對應，其中該些波長轉換元件45係彼此相距一距離。根據實施例，沒有長晶基板的顯示器結構，可以避免像素之間光訊號互相干擾(cross talk)，也可減少顯示器的整體厚度和增加可撓性。 After that, as shown in the 3D figure, due to the support of the adhesive material 41, the wavelength conversion element 45 can be formed on the semiconductor layer 311 on the surface where the different light-emitting units LU are located. The material is, for example, quantum dots (QD, It is a highly efficient fluorescent luminescent crystal). In one example, when a QD is excited by short-wavelength (high-energy) blue light, it will emit long-wavelength (low-energy) photons. The emitted photons have a narrow spectral distribution and a controllable peak. By controlling the QD manufacturing process Control the size, adjust the peak and size distribution, so that it has narrow spectral distribution characteristics, thereby converting different light colors. For example, in an example in which the light emitting unit LU includes a blue GaN layer, a plurality of red wavelength conversion elements 45R and a plurality of Green wavelength conversion element 45G. One of the red wavelength conversion elements 45R (which emits red light with a peak value between 580nm and 700nm) is disposed on a light-emitting unit LU, and a green wavelength conversion element 45G (which emits green light with a peak value between 530nm and 570nm). A light-emitting unit LU (the blue GaN layer emits blue light with a peak between 450nm and 490nm) disposed on a light-emitting unit LU and without a wavelength conversion element disposed thereon constitutes an RGB pixel, thereby forming multiple RGB pixels , to complete full-color display. In one example, the semiconductor layer 311 has opposite first and second surfaces 311a and 311b (ie, upper and lower surfaces), where the first surface 311a faces the substrate 21; and the light-emitting unit LU is formed on the first surface 311a. , the wavelength conversion elements 45 (such as the red wavelength conversion element 45R and the green wavelength conversion element 45G) are formed on the second surface 311b and respectively correspond to the positions of different light-emitting units LU, wherein the wavelength conversion elements 45 are spaced apart from each other. distance. According to embodiments, a display structure without a crystalline substrate can avoid cross talk of optical signals between pixels, and can also reduce the overall thickness of the display and increase flexibility.
接著，如第3E圖所示，係形成一防水層46於半導體層之第二表面311b上並覆蓋波長轉換元件45(45R/45G)。於一示例中，波長轉換元件45例如為量子點(QD)螢光粉材料層，防水層46係為一透明防水膜，其材質例如是環氧樹脂(epoxy)或其他可以阻絕水氣之具有高度透光性(例如對於發光單元所發出的光的穿透係數大於90%)的材料，以保護容易受水氣影響特性的量子點螢光粉材料。 Next, as shown in Figure 3E, a waterproof layer 46 is formed on the second surface 311b of the semiconductor layer and covers the wavelength conversion element 45 (45R/45G). In one example, the wavelength conversion element 45 is, for example, a quantum dot (QD) phosphor material layer, and the waterproof layer 46 is a transparent waterproof film made of, for example, epoxy or other materials that can block moisture. Materials with high light transmittance (for example, the transmission coefficient of the light emitted by the light-emitting unit is greater than 90%) to protect quantum dot phosphor materials that are easily affected by moisture.
再者，於上述如第3D圖所示之步驟中，可利用微影(lithography)製程形成波長轉換元件。請參照第4A-4C圖，其繪示本發明一實施例中一波長轉換元件的一種製法。如第4A圖所示，係形成一光阻PR於半導體層311上；接著，利用曝光顯影形成一圖案化光阻PR’，如第4B圖所示。其中，圖案化光阻PR’包括開口其對應後續形成紅色波長轉換元件45R之位置。然後，形成紅色波長轉換元件45R和去除圖案化光阻PR’，如第4C圖所示。同樣地，可利用如第4A-4C圖之步驟形成綠色波長轉換元件45G，以完成如第3D圖所示之波長轉換元件45之製作。 Furthermore, in the above-mentioned steps as shown in the 3D figure, a lithography process can be used to form the wavelength conversion element. Please refer to FIGS. 4A-4C , which illustrate a method of manufacturing a wavelength conversion element according to an embodiment of the present invention. As shown in Figure 4A, a photoresist PR is formed on the semiconductor layer 311; then, exposure and development are used to form a patterned photoresist PR', as shown in Figure 4B. The patterned photoresist PR' includes openings corresponding to the positions where the red wavelength conversion element 45R is subsequently formed. Then, the red wavelength conversion element 45R is formed and the patterned photoresist PR' is removed, as shown in FIG. 4C. Similarly, the green wavelength conversion element 45G can be formed by using the steps shown in Figures 4A-4C to complete the production of the wavelength conversion element 45 as shown in Figure 3D.
另外，雖然於上述示例中，係以發光單元LU包括藍光GaN層以及形成紅色波長轉換元件45R和綠色波長轉換元件45G為例做說明(如第2、3A-3E圖)，但本揭露並不限制於此態樣。於實際應用中，係依發光單元LU發出之光色做波長轉換元件的適當設置。例如於一應用例中，如發光單元LU包括紫外光(UV)LED，則需設置藍色波長轉換元件，以將非可見光的UV光轉換成藍光。第5圖係為本發明另一實施例之顯示器之剖面示意圖。第5圖與第3D圖中相同元件係標示相同標號，以利清楚說明，且該些元件之內容請參照如上，此處不重複贅述。如第5圖之示例中，於半導體層311上係形成紅色波長轉換元件45、綠色波長轉換元件45G和藍色波長轉換元件45B，據此形成RGB像素，完成全彩化顯示。 In addition, although in the above example, the light-emitting unit LU includes a blue GaN layer and forms a red wavelength conversion element 45R and a green wavelength conversion element 45G (as shown in Figures 2 and 3A-3E), this disclosure does not Limited to this form. In practical applications, the wavelength conversion element is appropriately set according to the color of light emitted by the light-emitting unit LU. For example, in an application example, if the light-emitting unit LU includes an ultraviolet (UV) LED, a blue wavelength conversion element needs to be provided to convert the non-visible UV light into blue light. Figure 5 is a schematic cross-sectional view of a display according to another embodiment of the present invention. The same components in Figure 5 and Figure 3D are marked with the same numbers to facilitate clear explanation. Please refer to the content of these components as above and will not be repeated here. As shown in the example of FIG. 5 , a red wavelength conversion element 45 , a green wavelength conversion element 45G and a blue wavelength conversion element 45B are formed on the semiconductor layer 311 , thereby forming RGB pixels to complete a full-color display.
再者，於一些實施例中，更可於波長轉換元件外圍形成低透光性材料或非透光性材料，例如不透明材料。第6圖係為本發明又一實施例之顯示器之剖面示意圖。第6圖與第3D圖中相同元件係標示相同標號，以利清楚說明，且該些元件之內容請參照如上，此處不重複贅述。如第6圖之示例中，於半導體層311上該些波長轉換元件之外圍係形成不透明材料OM，例如圍繞紅色波長轉換元件45R和綠色波長轉換元件45G的四周，以減少光相互干擾(cross-talk)的情形。不透明材料例如是黑色、白色或其他不透明材料，如：黑色顏料、白色顏料，黑色顏料的材料例如炭黑(Carbon Black)，白色顏料例如氧化鈦、二氧化矽、氧化鋁、氧化鎂、氧化鋅、硫化鋅、氧化鋯。 Furthermore, in some embodiments, a low-light-transmitting material or a non-light-transmitting material, such as an opaque material, may be formed around the wavelength conversion element. Figure 6 is a schematic cross-sectional view of a display according to another embodiment of the present invention. The same components in Figure 6 and Figure 3D are marked with the same numbers to facilitate clear explanation. Please refer to the content of these components as above and will not be repeated here. As shown in the example of FIG. 6 , an opaque material OM is formed around the wavelength conversion elements on the semiconductor layer 311 , for example, around the red wavelength conversion element 45R and the green wavelength conversion element 45G to reduce light interference (cross- talk) situation. Opaque materials are, for example, black, white or other opaque materials, such as black pigments, white pigments, black pigment materials such as carbon black, white pigments such as titanium oxide, silicon dioxide, aluminum oxide, magnesium oxide, zinc oxide , zinc sulfide, zirconium oxide.
另外，第7圖係為本發明再一實施例之顯示器之剖面示意圖。第7圖與第2圖中相同或類似之元件係標示相同或類似的標號，以利清楚說明。於此示例中，第一電極316(如導電接墊316P)的水平位置與第二電極317的水平位置不同(例如導電接墊316P的水平位置更接近半導體層311)。於此示例中，在第一電極上方，例如導電接墊316P上，並沒有形成連接部316C，因此如第7圖所示之連接金屬42，其第二部份422係直接連接導電接墊316P(亦即第一電極)與基板21之第二控制接墊222；換句話說，第7圖中之第二部份422之高度d2’係大於第2圖中第二部份422之高度d2。當然，實施例中可應用之連接金屬42的第一部份421與第二部份422之設置態樣，以及第一 電極316與第二電極317的相對水平位置並不僅限於如第2、7圖之示例。連接金屬之高度d1與d2不同或者接近，以及第一電極316與第二電極317的水平位置不同或者接近，皆屬本揭露實施例可應用之結構態樣，然而對於第一電極316與第二電極317的水平位置有明顯落差(i.e.連接金屬之高度d1與d2不同)的結構態樣，實施例提出之製法更可以確保基板21和發光二極體陣列之電極的電性導通。以下係提出其中一種黏結層之製法示例。 In addition, Figure 7 is a schematic cross-sectional view of a display according to yet another embodiment of the present invention. The same or similar components in Figure 7 and Figure 2 are marked with the same or similar numbers to facilitate clear explanation. In this example, the horizontal position of the first electrode 316 (eg, the conductive pad 316P) is different from the horizontal position of the second electrode 317 (eg, the horizontal position of the conductive pad 316P is closer to the semiconductor layer 311 ). In this example, the connection portion 316C is not formed above the first electrode, such as the conductive pad 316P. Therefore, as shown in FIG. 7, the second portion 422 of the connection metal 42 is directly connected to the conductive pad 316P. (i.e., the first electrode) and the second control pad 222 of the substrate 21; in other words, the height d2' of the second part 422 in Figure 7 is greater than the height d2 of the second part 422 in Figure 2 . Of course, the arrangement of the first part 421 and the second part 422 of the connecting metal 42 that can be applied in the embodiment, and the first The relative horizontal position of the electrode 316 and the second electrode 317 is not limited to the examples in FIGS. 2 and 7 . The heights d1 and d2 of the connecting metals are different or close, and the horizontal positions of the first electrode 316 and the second electrode 317 are different or close, which are all applicable structural aspects of the embodiment of the present disclosure. However, for the first electrode 316 and the second electrode 317, the heights d1 and d2 are different or close. The electrode 317 has a structure with an obvious horizontal position difference (i.e. the heights d1 and d2 of the connecting metal are different). The manufacturing method proposed in the embodiment can further ensure the electrical conduction between the substrate 21 and the electrodes of the light-emitting diode array. The following is an example of how to make one of the bonding layers.
第8A、8B圖係繪示本發明一實施例之一接合製程。其中，第8A圖為接合製程中加熱前之狀態，第8B圖為接合製程中加熱後之狀態。再者，第8A、8B圖與第3A、3B圖中相同之元件係沿用相同標號，以利清楚說明。於此示例中，係於接合製程中使用一自對組導電膠(self-assembly conductive paste，SAP)。 Figures 8A and 8B illustrate a bonding process according to an embodiment of the present invention. Among them, Figure 8A shows the state before heating during the bonding process, and Figure 8B shows the state after heating during the bonding process. Furthermore, the same components in Figures 8A and 8B and Figures 3A and 3B use the same numbers to facilitate clear explanation. In this example, a self-assembly conductive paste (SAP) is used in the bonding process.
如前述，係在基板21(例如一CMOS背板)和一發光組件(例如一LED晶圓，包括了一長晶基板310、發光二極體陣列31、絕緣層315、第一電極316、第二電極317等部件)之間，填入一自對組導電膠(SAP)，自對組導電膠(SAP)包括一非導電膠體410和複數個導電粒子420，在未進行加熱前導電粒子420係近似均勻地分散於非導電膠體410中，如第8A圖所示；亦即，導電粒子420在非導電膠體410中對應於第一電極316和第二電極317區域的分布密度係與對應電極以外區域的分布密 度相近。接著，於接合製程中對構裝件進行加熱，例如是在一低溫範圍(例如溫度約140℃~180℃)進行快速加熱(例如加熱時間約30秒~3分鐘)，則導電粒子420熔融，與電極接合導通，如第8B圖所示，導電粒子420聚集於對應第一電極316/第二電極317處與控制接墊221/222之間，而構成如上述實施例所述之連接金屬42的第一部份421與第二部份422。而非導電膠體410與未形成連接金屬42的導電粒子420則形成如上述實施例所述之黏結層40的黏結材料41。接合製程後的非導電膠體410亦因加熱而固化。 As mentioned above, the substrate 21 (for example, a CMOS backplane) and a light-emitting component (for example, an LED wafer) include a growth substrate 310, a light-emitting diode array 31, an insulating layer 315, a first electrode 316, a third Between the two electrodes 317 and other components), a self-paired conductive glue (SAP) is filled. The self-paired conductive glue (SAP) includes a non-conductive colloid 410 and a plurality of conductive particles 420. The conductive particles 420 are not heated before are approximately uniformly dispersed in the non-conductive colloid 410, as shown in Figure 8A; that is, the distribution density of the conductive particles 420 in the non-conductive colloid 410 corresponding to the first electrode 316 and the second electrode 317 is the same as that of the corresponding electrode Densely distributed outside areas Degree is similar. Then, during the bonding process, the component is heated, for example, rapidly heated (for example, for a heating time of about 30 seconds to 3 minutes) in a low temperature range (for example, a temperature of about 140°C to 180°C), and then the conductive particles 420 are melted. Connected and connected with the electrodes, as shown in Figure 8B, the conductive particles 420 are gathered between the corresponding first electrode 316/second electrode 317 and the control pads 221/222 to form the connecting metal 42 as described in the above embodiment. The first part 421 and the second part 422. The non-conductive colloid 410 and the conductive particles 420 that do not form the connecting metal 42 form the adhesive material 41 of the adhesive layer 40 as described in the above embodiment. The non-conductive glue 410 after the bonding process is also solidified by heating.
其中，導電粒子420包含有熔點低於300℃的金屬材料。金屬材料可以是元素、化合物、或合金，例如：鉍(Bi)、錫(Sn)、銀(Ag)、銦(In)、或其合金(例如：錫鉍銀合金)。當導電粒子21為合金時，導電粒子21的熔點是指合金的共晶點。非導電膠體410可以是熱固性聚合物，例如：環氧樹脂(epoxy)、矽氧樹脂(silicone)、聚甲基丙烯酸甲酯、以及環硫化物(episulfide)。非導電膠體410可以在固化溫度下固化。於示例中，導電粒子420的熔點例如低於非導電膠體410的固化溫度。如第8A圖所示，在加熱步驟之前，導電粒子420的粒徑被定義為導電粒子420的直徑，而兩個相鄰的第二電極317之間的最短距離優選地是導電粒子420的粒徑的兩倍以上。於一示例中，導電粒子420例如是錫球；於一示例中，錫球粒徑係在1μm至50μm範圍之間(1μm
對於第一電極316與第二電極317的水平位置不同(連接金屬之高度d1與d2不同)的結構態樣，若是使用異方性導電膜(ACF)壓合，以分別接合第一電極316/第二電極317與基板21上的控制接墊221/222，則不等高的第一電極316與第二電極317在壓合時可能會有受力不均的現象產生，導致第二電極317與控制基板之間導通不良。因此，相較於傳統於電極上鍍製接點(bumps)、或是使用異方性導電膜(ACF)接合的方式，實施例所提出之黏結層製法，例如利用上述SAP(加熱後可自對組之特性，無須加壓)，可以確保基板21和發光二極體電極之間的電性導通，也避免了受力不均的現象產生，特別是第一電極316與第二電極317的水平位置不同(連接金屬之高度d1與d2不同)的結構態樣。再者，也由於SAP具有加熱後可自行組裝之特性，沒有傳統用接點對位不易的問題，製作上亦快速容易，因此適合量產。 For the structural form in which the horizontal positions of the first electrode 316 and the second electrode 317 are different (the heights d1 and d2 of the connecting metal are different), if anisotropic conductive film (ACF) is used for lamination, the first electrode 316/ The second electrode 317 and the control pads 221/222 on the substrate 21, the first electrode 316 and the second electrode 317 with unequal heights may experience uneven force when they are pressed together, resulting in the second electrode 317 Poor conduction with the control board. Therefore, compared with the traditional methods of plating bumps on electrodes or using anisotropic conductive films (ACF) for bonding, the adhesive layer manufacturing method proposed in the embodiment, for example, uses the above-mentioned SAP (which can automatically be heated after heating). Due to the characteristics of the combination, no pressure is required), the electrical conduction between the substrate 21 and the light-emitting diode electrode can be ensured, and the phenomenon of uneven force is avoided, especially between the first electrode 316 and the second electrode 317. Structural styles with different horizontal positions (different heights d1 and d2 of the connecting metal). Furthermore, because SAP has the characteristic of self-assembly after heating, there is no problem of difficult alignment with traditional contacts, and the production is fast and easy, so it is suitable for mass production.
除了如上述示例之自對組異向性導電膠，亦可選用其他材料與製法，以完成實施例之黏結層40的設置。第9圖係繪示本發明另一實施例之顯示器的剖面示意圖。第9圖與第2圖中相同或相似之元件係沿用相同或相似標號，且相同元件之說明請參照上述，於此不贅述。如第9圖所示，於此示例中，黏結層50可包括黏結材料51和複數個連接金屬52，連接金屬52包括複數個第一部份521和複數個第二部份522，其中第一部份 521對應發光單元LU(第二電極317)，第二部份522係對應導電接墊316P(第一電極316)。其連接和設置方式之詳細內容請參照上述如第2圖所示之第一部份421與第二部份422。如第2圖所示之一實施例中，連接金屬42例如是由導電粒子420於加熱步驟中熔融並聚集而形成。而如第9圖所示之一實施例中，連接金屬52例如是以曝光顯影方式形成金屬體或其他導電體。可應用之黏結層50的連接金屬52例如是金屬體(metal dots，例如：銦(In)、錫(Sn))或其他導電體(例如柱體、顆粒等不限形狀之導電物)，而黏結層50的黏結材料51例如是具有高度透光性的高分子，例如苯並環丁烯(Benzocyclobutene)類高分子(BCB-based polymers)或樹脂。BCB類高分子是具有低介電特性的熱固型高分子，其具有優良的接合能力、抗化學腐蝕性，以及良好接合強度。樹脂的材料例如包括熱固型高分子以及助焊劑，熱固型高分子例如是環氧樹脂。其他具有高度透光性(例如對於發光單元所發出的光的穿透係數大於90%)並具有黏結特性的材料，亦可以應用，並不僅限於BCB類高分子或樹脂。 In addition to the self-aligned anisotropic conductive adhesive as shown in the above example, other materials and manufacturing methods can also be used to complete the arrangement of the adhesive layer 40 of the embodiment. Figure 9 is a schematic cross-sectional view of a display according to another embodiment of the present invention. The same or similar components in Figure 9 and Figure 2 use the same or similar numbers, and for descriptions of the same components, please refer to the above and will not be repeated here. As shown in Figure 9, in this example, the adhesive layer 50 may include an adhesive material 51 and a plurality of connecting metals 52. The connecting metal 52 includes a plurality of first parts 521 and a plurality of second parts 522, wherein the first part 521 corresponds to the light-emitting unit LU (the second electrode 317), and the second part 522 corresponds to the conductive pad 316P (the first electrode 316). For details of its connection and setting methods, please refer to the first part 421 and the second part 422 shown in Figure 2 above. In an embodiment shown in FIG. 2 , the connecting metal 42 is formed by, for example, conductive particles 420 being melted and aggregated during the heating step. In an embodiment shown in FIG. 9 , the connecting metal 52 is formed of a metal body or other conductive body by exposure and development, for example. The applicable connecting metal 52 of the adhesive layer 50 is, for example, metal dots (such as indium (In), tin (Sn)) or other conductors (such as pillars, particles, and other conductive objects of any shape), and The adhesive material 51 of the adhesive layer 50 is, for example, a highly translucent polymer, such as benzocyclobutene (BCB-based polymers) or resin. BCB polymers are thermosetting polymers with low dielectric properties. They have excellent bonding ability, chemical corrosion resistance, and good bonding strength. The resin material includes, for example, a thermosetting polymer and a flux. The thermosetting polymer is, for example, epoxy resin. Other materials with high light transmittance (for example, the transmission coefficient of the light emitted by the light-emitting unit is greater than 90%) and adhesive properties can also be applied, and are not limited to BCB polymers or resins.
關於形成如第9圖所示之顯示器，以下係提出其中兩種製法，以做示例說明。 Regarding forming the display as shown in Figure 9, two manufacturing methods are proposed below as examples.
第10A-10F圖係繪示如第9圖所示之顯示器的其中一種製法。第10A-10F圖與第3A-3E圖中相同元件係沿用相同標號，且相關元件之內容可以參考前述相關段落。如第10A圖所示，首先提供一基板21(具有控制電路，例如一CMOS背 板)，其上例如具有複數個接墊22(例如第一控制接墊221和第二控制接墊222)。接著，形成光阻PR於基板21上方，如第10B圖所示。對光阻PR進行曝光顯影形成圖案化光阻PR’，而於對應後續欲形成之連接金屬52處形成多個開口，如第10C圖所示。之後，透過開口例如以蒸鍍方式形成金屬體(如銦、錫、銅、金、鋁、銀)或其他導電體，以形成連接金屬52的第一部份521和第二部份522，並移除圖案化光阻PR’，如第10D圖所示。接著，第10D圖中的結構與發光二極體陣列31對接，並於基板21及發光二極體陣列之間填入黏結材料51，如第10E圖所示。然後，形成波長轉換元件45(例如45R/45G或45R/45G/45B，視發光單元的光色而定)，如第10F圖所示。 Figures 10A-10F illustrate one of the manufacturing methods of the display shown in Figure 9. The same components in Figures 10A-10F and Figures 3A-3E use the same numbers, and the content of the relevant components can be referred to the above-mentioned relevant paragraphs. As shown in Figure 10A, first a substrate 21 (having a control circuit, such as a CMOS back board), which has, for example, a plurality of pads 22 (for example, a first control pad 221 and a second control pad 222). Next, a photoresist PR is formed on the substrate 21, as shown in Figure 10B. The photoresist PR is exposed and developed to form a patterned photoresist PR', and a plurality of openings are formed corresponding to the connecting metal 52 to be formed later, as shown in Figure 10C. Afterwards, a metal body (such as indium, tin, copper, gold, aluminum, silver) or other conductive body is formed through the opening, for example, by evaporation, to form the first part 521 and the second part 522 of the connecting metal 52, and Remove the patterned photoresist PR' as shown in Figure 10D. Next, the structure in Figure 10D is connected to the light-emitting diode array 31, and an adhesive material 51 is filled between the substrate 21 and the light-emitting diode array, as shown in Figure 10E. Then, a wavelength conversion element 45 (for example, 45R/45G or 45R/45G/45B, depending on the light color of the light-emitting unit) is formed, as shown in Figure 10F.
第11A-11G圖係繪示如第9圖所示之顯示器的其中另一種製法。第11A-11G圖與第3A-3E圖中相同元件係沿用相同標號，且相關元件之內容可以參考前述相關段落。如第11A圖所示，首先提供一基板21(具有控制電路，例如一CMOS背板)，其上例如具有複數個接墊22(例如第一控制接墊221和第二控制接墊222)。接著，形成光阻PR於基板21上方，如第11B圖所示。對光阻PR進行曝光顯影形成圖案化光阻PR’，而於對應後續欲形成之連接金屬52的第一部份521和第二部份522處形成多個開口，如第11C圖所示。之後，透過開口例如以蒸鍍方式形成金屬體(如銦、錫、銅、金、鋁、銀)或其他導電體，以形成第一部份521和第二部份522，並移除圖案化光阻 PR’，如第11D圖所示。接著，將尚未固化的黏結材料51形成在基板21上並覆蓋連接金屬52，如第11E圖所示。第11E圖中的結構再與發光二極體陣列31對接，如第11F圖所示；於此步驟中係包含熔融第一部份521和第二部份522，因此，第一部份521和第二部份522例如分別與第二電極317和連接部316C接合。黏結材料51在第一部份521和第二部份522分別與第二電極317和連接部316C接合後被固化。 Figures 11A-11G illustrate another method of manufacturing the display shown in Figure 9. The same components in Figures 11A-11G and Figures 3A-3E use the same numbers, and the content of the relevant components can be referred to the above-mentioned relevant paragraphs. As shown in FIG. 11A , a substrate 21 (having a control circuit, such as a CMOS backplane) is first provided, on which there are, for example, a plurality of pads 22 (for example, a first control pad 221 and a second control pad 222 ). Next, a photoresist PR is formed on the substrate 21, as shown in FIG. 11B. The photoresist PR is exposed and developed to form a patterned photoresist PR', and a plurality of openings are formed at the first portion 521 and the second portion 522 corresponding to the connection metal 52 to be formed later, as shown in Figure 11C. Afterwards, a metal body (such as indium, tin, copper, gold, aluminum, silver) or other conductive body is formed through the opening, for example, by evaporation to form the first part 521 and the second part 522, and the patterning is removed. Photoresist PR’, as shown in Figure 11D. Next, the uncured bonding material 51 is formed on the substrate 21 and covers the connecting metal 52, as shown in FIG. 11E. The structure in Figure 11E is then connected to the light-emitting diode array 31, as shown in Figure 11F; this step includes melting the first part 521 and the second part 522. Therefore, the first part 521 and The second portion 522 is connected to the second electrode 317 and the connecting portion 316C, for example. The adhesive material 51 is solidified after the first part 521 and the second part 522 are respectively joined to the second electrode 317 and the connection part 316C.
根據上述之示例，可先形成連接金屬42/52，再填入黏結材料41/51，並根據選用黏結材料的特性進行適當製程(例如加熱或照光等)以固化黏結材料41/51，完成實施例之黏結層40/50的設置接合。本揭露對於實施例之黏結層的材料與設置方式，例如黏結材料41/51是在基板21(具有控制電路)與發光二極體陣列31對接之前或之後而設置，並不特別限制。 According to the above example, the connecting metal 42/52 can be formed first, and then the bonding material 41/51 can be filled in. According to the characteristics of the bonding material selected, an appropriate process (such as heating or lighting, etc.) can be performed to solidify the bonding material 41/51 to complete the implementation. For example, the adhesive layer 40/50 is set for jointing. The present disclosure does not specifically limit the material and arrangement of the adhesive layer of the embodiment. For example, the adhesive material 41/51 is provided before or after the substrate 21 (having a control circuit) is connected to the light-emitting diode array 31.
再者，上述示例中，例如第2-9圖，其連接金屬42/52之側壁係直線繪製以做說明，但實際應用時連接金屬42/52的剖面形狀並不侷限於如第2-9圖中所繪之直線形側壁，連接金屬42/52之側壁(或最外側表面)可能呈彎曲形狀或其他例如不規則形狀，係視黏結層的材料選擇和/或製程步驟而定，例如選用SAP作為黏結層時導電粒子420受熱而熔融並聚集於電極處所構成的連接金屬42其側壁可能呈彎曲狀，或者固化黏結材料41/51時可能會使連接金屬42/52的剖面形狀產生變化。因此，實施例所例舉之圖示僅作說明之用，並非用以限制本揭露。 Furthermore, in the above examples, such as Figure 2-9, the side walls of the connecting metal 42/52 are drawn as straight lines for illustration, but in actual application, the cross-sectional shape of the connecting metal 42/52 is not limited to that shown in Figure 2-9. The straight sidewalls shown in the figure, the sidewalls (or outermost surfaces) of the connecting metal 42/52 may be curved or other, such as irregular shapes, depending on the material selection and/or process steps of the bonding layer, such as When SAP is used as a bonding layer, the conductive particles 420 are heated, melted, and gathered at the electrode to form a connecting metal 42 with a curved side wall, or the cross-sectional shape of the connecting metal 42/52 may change when the bonding material 41/51 is cured. Therefore, the illustrations illustrated in the embodiments are for illustration only and are not intended to limit the present disclosure.
另外，上述示例，例如第2-9圖係以如第1圖所示之網格狀N電極為例，以做其中實施例之說明，但本揭露並不侷限於此。非網格狀之N電極亦可應用本揭露之實施例。以下係提出其中一種非網格狀之N電極態樣做另一示例之說明。 In addition, the above examples, such as Figures 2-9, take the grid-shaped N electrode as shown in Figure 1 as an example to illustrate the embodiments, but the present disclosure is not limited thereto. Non-grid N electrodes can also be used in embodiments of the present disclosure. The following is an illustration of another example of a non-grid N electrode configuration.
第12圖係繪示根據本發明另一實施例之發光二極體陣列與電極之上視圖。第13圖為本發明一實施例之顯示器之剖面示意圖，其發光二極體陣列與電極係沿第12圖之剖面線13-13所繪示。請同時參照第12、13圖。第12、13圖與第1、2圖中相同或相似之元件係沿用相同或相似標號，且相同元件之說明請參照上述，於此不贅述。不同於第1圖之網格狀第一電極(例如N電極)，如第12圖所示之第一電極係包含位於發光二極體陣列外圍的導電接墊316P(例如N接墊)，而沒有設置如第1圖之延伸部例如沿著第一方向D1、第二方向D2(例如X、Y方向)延伸之金屬走線3161、3162。因此如第13圖所示之發光二極體陣列中，並沒有延伸部位於兩兩相鄰的發光單元LU之間。雖然如第12圖示例之非網格狀N電極，其電阻值大於第1圖之網格狀N電極，但亦屬本揭露可應用之N電極態樣其中之一。本揭露並沒有對可應用之N電極態樣多做限制。 Figure 12 is a top view of a light emitting diode array and electrodes according to another embodiment of the present invention. Figure 13 is a schematic cross-sectional view of a display according to an embodiment of the present invention. The light-emitting diode array and electrodes are shown along the section line 13-13 in Figure 12. Please also refer to Figures 12 and 13. The same or similar components in Figures 12 and 13 as in Figures 1 and 2 use the same or similar numbers. Please refer to the above descriptions for the same components and will not be repeated here. Different from the grid-shaped first electrode (such as N electrode) in Figure 1, the first electrode shown in Figure 12 includes conductive pads 316P (such as N pads) located on the periphery of the light-emitting diode array, and The metal traces 3161 and 3162 extending along the first direction D1 and the second direction D2 (for example, the X and Y directions) are not provided as shown in FIG. 1 . Therefore, in the light-emitting diode array shown in FIG. 13, there is no extending portion between two adjacent light-emitting units LU. Although the resistance value of the non-grid N electrode shown in Figure 12 is greater than that of the grid N electrode shown in Figure 1, it is also one of the N electrode forms applicable to the present disclosure. This disclosure does not place any restrictions on the applicable N electrode forms.
根據上述，實施例係提出具有發光二極體陣列之顯示器，包括一驅動基板(例如CMOS基板)、一發光二極體陣列和一黏結層形成於兩者之間，其中黏結層包括連接金屬和黏結材料，連接金屬可以提供驅動基板和發光二極體陣列之間的電性 連接，而黏結材料則填充於驅動基板和發光二極體陣列之間的空隙以提供支撐，並可適當阻隔水氣侵蝕電極與進入發光二極體的材料層中。據此，原先用以形成發光二極體陣列的長晶基板(例如藍寶石基板)可以在設置黏結層之後移除，因此實施例之顯示器不具有長晶基板。若應用於微型發光二極體陣列製造，各微型發光二極體係相應於一子像素，則如實施例提出之沒有長晶基板的顯示器結構可以避免子像素之間光訊號互相干擾。而且沒有長晶基板亦可以減少顯示器的整體厚度，增加顯示器之可撓性，使應用更為廣泛。再者，實施例所提出之製造方法，特別適合用於電極水平位置(/水平高度)不同的發光二極體與驅動基板之間的充填與電性導通，而黏結層中連接金屬與黏結材料之形成也不會對結構中的相關層和組件造成損傷，也毋須採用耗時且昂貴的製造程序，因此實施例提出之結構與製法實適合量產。 Based on the above, the embodiment proposes a display with a light-emitting diode array, including a driving substrate (such as a CMOS substrate), a light-emitting diode array and an adhesive layer formed between the two, wherein the adhesive layer includes a connecting metal and a Bonding material, connecting metal can provide electrical connection between the driving substrate and the light-emitting diode array The bonding material fills the gap between the driving substrate and the light-emitting diode array to provide support, and can appropriately prevent water vapor from eroding the electrode and entering the material layer of the light-emitting diode. Accordingly, the crystal-growing substrate (eg, sapphire substrate) originally used to form the light-emitting diode array can be removed after the adhesive layer is provided. Therefore, the display of the embodiment does not have the crystal-growing substrate. If applied to the manufacture of micro light-emitting diode arrays, each micro light-emitting diode system corresponds to a sub-pixel, and the display structure without a growing crystal substrate as proposed in the embodiment can avoid mutual interference of optical signals between sub-pixels. Moreover, the absence of a growing crystal substrate can also reduce the overall thickness of the display, increase the flexibility of the display, and make it more widely used. Furthermore, the manufacturing method proposed in the embodiment is particularly suitable for filling and electrical conduction between light-emitting diodes and drive substrates with different electrode horizontal positions (/horizontal heights), and the bonding layer connects metal and bonding materials The formation will not cause damage to the relevant layers and components in the structure, and does not require time-consuming and expensive manufacturing procedures. Therefore, the structure and manufacturing method proposed in the embodiment are suitable for mass production.
如上述圖示之結構和步驟，是用以敘述本揭露之部分實施例或應用例，本揭露並不限制於上述結構和步驟之範圍與應用態樣。其他不同結構態樣之實施例，例如不同內部組件的已知構件都可能可以應用，其示例之結構和步驟可根據實際應用之條件需求或材料選擇而調整。因此圖示之結構僅為舉例說明之用，而非限制之用。通常知識者當知，應用本揭露之相關結構和步驟過程，例如發光二極體陣列、電極、控制基板等相關元件和層的配置，或是製造步驟等，都可能以依實際應用樣態所需而可能有相應的調整和變化。 The structures and steps shown in the above figures are used to describe some embodiments or application examples of the present disclosure, and the present disclosure is not limited to the scope and application forms of the above structures and steps. Other embodiments with different structural forms, such as known components of different internal components, may be applicable, and the structures and steps of the examples may be adjusted according to actual application requirements or material selection. Therefore, the structure shown in the diagram is for illustration only and not for limitation. Those with ordinary knowledge should know that the relevant structures and steps in applying the present disclosure, such as the configuration of related components and layers such as light-emitting diode arrays, electrodes, control substrates, etc., or the manufacturing steps, etc., may be modified according to the actual application. There may be corresponding adjustments and changes if necessary.
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended patent application scope.
21:基板 21:Substrate
22:接墊 22: Pad
221:第一控制接墊 221: First control pad
222:第二控制接墊 222: Second control pad
31:發光二極體陣列 31: Light emitting diode array
LU:發光單元 LU: light emitting unit
311、313:半導體層 311, 313: Semiconductor layer
311a:第一表面 311a: first surface
311b:第二表面 311b: Second surface
313a:第二導電型半導體層之表面 313a: Surface of the second conductive type semiconductor layer
312:活性疊層 312:Active stack
315:絕緣層 315:Insulation layer
316:第一電極 316:First electrode
316P:導電接墊 316P: Conductive pad
3162:走線 3162: Routing
316C:連接部 316C:Connection part
317:第二電極 317: Second electrode
40:黏結層 40: Adhesive layer
41:黏結材料 41: Adhesive materials
42:連接金屬 42:Connect metal
421:第一部份 421:Part One
422:第二部份 422:Part 2
d1:第一部份之高度 d1: height of the first part
d2:第二部份之高度 d2:Height of the second part
45:波長轉換元件 45:Wavelength conversion element
45R:紅色波長轉換元件 45R: Red wavelength conversion element
45G:綠色波長轉換元件 45G: Green wavelength conversion element
Claims (10)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/447,484 US10984702B2 (en) | 2018-06-22 | 2019-06-20 | Display apparatus with array of light emitting diodes and method of manufacturing the same |
| KR1020190074112A KR20200000369A (en) | 2018-06-22 | 2019-06-21 | Display apparatus with array of light emitting diodes and method of manufacturing the same |
| CN201910541174.1A CN110634905B (en) | 2018-06-22 | 2019-06-21 | Display with LED array and its manufacturing method |
| US17/233,777 US11423830B2 (en) | 2018-06-22 | 2021-04-19 | Display apparatus with array of light emitting diodes and method of manufacturing the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107121480 | 2018-06-22 | ||
| TW107121480 | 2018-06-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202002338A TW202002338A (en) | 2020-01-01 |
| TWI827613B true TWI827613B (en) | 2024-01-01 |
Family
ID=69942081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108119854A TWI827613B (en) | 2018-06-22 | 2019-06-10 | Display apparatus with array of light emitting diodes and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI827613B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI766234B (en) * | 2020-02-10 | 2022-06-01 | 台灣愛司帝科技股份有限公司 | Led chip package structure and method of manufacturing the same |
| CN114256397B (en) * | 2020-09-11 | 2023-10-27 | 成都辰显光电有限公司 | Display panel, preparation method thereof and display device |
| CN113629174B (en) * | 2021-07-30 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel manufacturing method, display panel and display device |
| CN114597229B (en) * | 2022-03-22 | 2023-06-27 | 业成科技（成都）有限公司 | Touch-control type miniature light-emitting diode display and manufacturing method thereof |
| CN115692572A (en) * | 2022-09-23 | 2023-02-03 | 业成科技（成都）有限公司 | LED wafer, circuit board, display and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150362165A1 (en) * | 2014-06-14 | 2015-12-17 | Hiphoton Co., Ltd. | Light Engine Array |
| TW201801284A (en) * | 2016-04-12 | 2018-01-01 | 克里公司 | High density pixelated LED and devices and methods thereof |
-
2019
- 2019-06-10 TW TW108119854A patent/TWI827613B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150362165A1 (en) * | 2014-06-14 | 2015-12-17 | Hiphoton Co., Ltd. | Light Engine Array |
| TW201801284A (en) * | 2016-04-12 | 2018-01-01 | 克里公司 | High density pixelated LED and devices and methods thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202002338A (en) | 2020-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110634905B (en) | Display with LED array and its manufacturing method | |
| TWI827613B (en) | Display apparatus with array of light emitting diodes and method of manufacturing the same | |
| US11158610B2 (en) | Display device using semiconductor light emitting element, and manufacturing method therefor | |
| CN110024484A (en) | Use the display device and its manufacturing method of light emitting semiconductor device | |
| TW201735391A (en) | Image display, method for manufacturing same, and light emitting device, method for manufacturing same | |
| JP2010251693A (en) | Light emitting diode device, and method for forming the same | |
| US20220367429A1 (en) | Light emitting device for display and display apparatus having the same | |
| KR20110000730A (en) | Surface-mounted led module and method for producing a surface-mounted led module | |
| CN106997888B (en) | Light emitting diode display device | |
| JP6988460B2 (en) | Light emitting device, manufacturing method of light emitting device, and projector | |
| JP2022530370A (en) | Light emitting diode display panel, display device with it and method of manufacturing it | |
| TW202105709A (en) | Passive micro-LED array device with uniform brightness for effectively utilizing substrate area and improving brightness uniformity | |
| JP7460650B2 (en) | Light-emitting element for display and display device having same | |
| CN114843317A (en) | Inorganic-organic LED mixed color display device and preparation method thereof | |
| KR102472353B1 (en) | Light emitting device, array substrate, panel, and display device including the same | |
| TW202414814A (en) | Display apparatus with array of light emitting diodes and method of manufacturing the same | |
| CN210224057U (en) | Light emitting element | |
| US20160218245A1 (en) | Top and bottom electrode design for printed vertical leds | |
| KR20220093086A (en) | Light emitting element for display and LED display device having same | |
| CN214672654U (en) | Light emitting element module and display device including the same | |
| TW202316402A (en) | Display panel | |
| US11735569B2 (en) | Light emitting device module and display apparatus having the same | |
| US20240162402A1 (en) | Display device | |
| KR20190012030A (en) | Display device using semiconductor light emitting device | |
| US20230411575A1 (en) | Display device and method for manufacturing same |