TWI827192B - A system for sorting silicon wafers - Google Patents
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- TWI827192B TWI827192B TW111129814A TW111129814A TWI827192B TW I827192 B TWI827192 B TW I827192B TW 111129814 A TW111129814 A TW 111129814A TW 111129814 A TW111129814 A TW 111129814A TW I827192 B TWI827192 B TW I827192B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 138
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 138
- 239000010703 silicon Substances 0.000 title claims abstract description 138
- 235000012431 wafers Nutrition 0.000 title claims abstract description 111
- 238000012545 processing Methods 0.000 claims abstract description 36
- 238000011144 upstream manufacturing Methods 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000003760 hair shine Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/04—Sorting according to size
- B07C5/10—Sorting according to size measured by light-responsive means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Sorting Of Articles (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明實施例公開了一種用於分選矽片的系統，該系統包括傳送帶，該傳送帶用於將多個矽片傳送至處理站位；檢測器，該檢測器用於檢測被傳送的每個矽片的厚度值；設置在該檢測器與該處理站位元之間的移出裝置，該移出裝置用於在該多個矽片被傳送的過程中將該厚度值不滿足該處理站位的要求的矽片從該傳送帶移出。An embodiment of the present invention discloses a system for sorting silicon wafers. The system includes a conveyor belt used to transport a plurality of silicon wafers to a processing station; a detector used to detect each transported silicon wafer. The thickness value of the chip; a removal device provided between the detector and the processing station unit, the removal device is used to remove the thickness value that does not meet the requirements of the processing station during the transportation of the plurality of silicon wafers. of silicon wafers are removed from the conveyor belt.
Description
本發明屬於半導體矽片生產領域，尤其關於一種用於分選矽片的系統。The invention belongs to the field of semiconductor silicon wafer production, and in particular relates to a system for sorting silicon wafers.
半導體矽材料是積體電路產業的主體功能材料，矽片的加工技術已逐步成為電子資訊產業發展的重要驅動力。隨著矽片直徑越來越大與積體電路特徵尺寸越來越小，對矽片表面平坦度及去除速率提出了更高的要求，研磨加工是加快表面去除速率，提升矽片表面平坦度最有效的技術手段之一。Semiconductor silicon material is the main functional material in the integrated circuit industry, and silicon wafer processing technology has gradually become an important driving force for the development of the electronic information industry. As the diameter of silicon wafers becomes larger and larger and the feature sizes of integrated circuits become smaller and smaller, higher requirements are put forward for the surface flatness and removal rate of silicon wafers. Grinding processing is to speed up the surface removal rate and improve the surface flatness of silicon wafers. One of the most effective technical means.
對於研磨技術，厚度去除效率與厚度控制是該步驟的重要評價參數。因此，通常在對矽片進行研磨之前，首先會對矽片的厚度進行測量來判斷矽片是否滿足研磨的厚度要求。具體地，矽片被擱置在傳送帶上後，先送往測厚區停止，利用託盤帶動矽片原地轉動，採用紅外點掃描探測頭沿矽片外周進行厚度測試，利用矽片外周厚度估測矽片整體厚度。在該測試條件下，若厚度滿足研磨要求的範圍，則測厚探針退出，繼續下一步驟；若厚度超出加工允許範圍，則設備停機並發出警報對操作者進行提醒，操作者將矽片取出後重新開機設備。For grinding technology, thickness removal efficiency and thickness control are important evaluation parameters for this step. Therefore, usually before grinding a silicon wafer, the thickness of the silicon wafer is first measured to determine whether the silicon wafer meets the thickness requirements for grinding. Specifically, after the silicon wafer is placed on the conveyor belt, it is first sent to the thickness measurement area to stop. The tray is used to drive the silicon wafer to rotate in place. An infrared point scanning probe is used to conduct thickness testing along the outer periphery of the silicon wafer. The outer periphery thickness of the silicon wafer is estimated. The overall thickness of the silicon wafer. Under this test condition, if the thickness meets the grinding requirements, the thickness measurement probe will exit and continue to the next step; if the thickness exceeds the allowable processing range, the equipment will shut down and an alarm will sound to remind the operator, who will remove the silicon wafer. Restart the device after removing it.
上述操作過程需要操作者的參與來完成矽片的取出，增加了人力成本，設備會出現停機的狀況而導致產能降低，並且設備在停機後又重新啟動會對加工精度產生影響，需要重新進行精度調整，加劇處理過程的繁雜程度。The above operation process requires the operator's participation to complete the removal of the silicon wafers, which increases labor costs. The equipment will be shut down, resulting in reduced production capacity. Moreover, restarting the equipment after shutdown will have an impact on the processing accuracy, and the accuracy needs to be re-measured. Adjustments make the processing process more complicated.
為解決上述技術問題，本發明實施例期望提供一種分選矽片的系統，該系統能夠避免人力成本的增加以及產能的降低，並且能夠避免因重新啟動造成的加工精度不利影響。In order to solve the above technical problems, embodiments of the present invention are expected to provide a system for sorting silicon wafers, which can avoid an increase in labor costs and a reduction in production capacity, and can avoid adverse effects on processing accuracy caused by restarting.
本發明的技術方案是這樣實現的： 本發明實施例提供了一種用於分選矽片的系統，該系統包括： 傳送帶，該傳送帶用於將多個矽片傳送至處理站位； 檢測器，該檢測器用於檢測被傳送的每個矽片的厚度值； 設置在該檢測器與該處理站位元之間的移出裝置，該移出裝置用於在該多個矽片被傳送的過程中將該厚度值不滿足該處理站位的要求的矽片從該傳送帶移出。 The technical solution of the present invention is implemented as follows: An embodiment of the present invention provides a system for sorting silicon wafers. The system includes: A conveyor belt used to transport multiple silicon wafers to a processing station; A detector used to detect the thickness value of each silicon wafer being transported; A removal device disposed between the detector and the processing station unit, the removal device is used to remove the silicon wafers whose thickness value does not meet the requirements of the processing station from the process of the plurality of silicon wafers being transported. The conveyor belt moves out.
本發明實施例提供了一種用於分選矽片的系統，當檢測到特定矽片的厚度值不滿足處理站位的要求時：由於移出裝置能夠自動地將該特定矽片從傳送帶移出，因此不需要人工的參與來完成該特定矽片的取出，避免了人力成本的浪費；另外由於移出裝置能夠在該特定矽片被傳送的過程中將其移出，因此不需要使傳送帶停止傳送作業，避免了產能降低的問題以及停機以後重新啟動導致的加工精度受到影響的問題。Embodiments of the present invention provide a system for sorting silicon wafers. When it is detected that the thickness value of a specific silicon wafer does not meet the requirements of the processing station: since the removal device can automatically remove the specific silicon wafer from the conveyor belt, There is no need for manual participation to complete the removal of the specific silicon wafer, which avoids waste of labor costs; in addition, since the removal device can remove the specific silicon wafer while it is being transported, there is no need to stop the conveyor belt from transporting the wafer. This solves the problem of reduced production capacity and the impact on processing accuracy caused by restarting after shutdown.
為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效，茲將本發明配合附圖及附件，並以實施例之表達形式詳細說明如下，而其中所使用之圖式，其主旨僅為示意及輔助說明書之用，未必為本發明實施後之真實比例與精準配置，故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍，合先敘明。In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.
在本發明實施例的描述中，需要理解的是，術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“豎直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係，僅是為了便於描述本發明實施例和簡化描述，而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作，因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" ", "horizontal", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience and simplicity in describing the embodiments of the present invention. The description does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore is not to be construed as a limitation of the invention.
此外，術語“第一”、“第二”僅用於描述目的，而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此，限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中，“多個”的含義是兩個或兩個以上，除非另有明確具體的限定。In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.
在本發明實施例中，除非另有明確的規定和限定，術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解，例如，可以是固定連接，也可以是可拆卸連接，或成一體；可以是機械連接，也可以是電連接；可以是直接相連，也可以通過中間媒介間接相連，可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言，可以根據具體情況理解上述術語在本發明實施例中的具體含義。In the embodiments of the present invention, unless otherwise expressly stipulated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a removable connection. Disassembly and connection, or integration; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
參見圖1，本發明實施例提供了一種用於分選矽片的系統1，該用於分選矽片的系統1可以包括： 如在圖1中通過拋麵線陰影區域示意性地示出的傳送帶10，該傳送帶10用於將多個矽片W傳送至處理站位TS，例如，傳送帶10可以繞制在圖1中未示出的兩個滾輪上，通過兩個滾輪的旋轉沿著圖1中示出的箭頭A1的方向轉動，從而帶動擱置在傳送帶10上的矽片W朝向處理站位TS移動，其中，圖1中示例性地示出了3個矽片； 檢測器20，該檢測器20用於檢測被傳送的每個矽片W的厚度值； 設置在該檢測器20與該處理站位TS之間的移出裝置30，該移出裝置30用於在該多個矽片W被傳送的過程中將該厚度值不滿足該處理站位TS的要求的矽片W從該傳送帶10移出，例如將圖1中與處理站位TS相鄰的矽片W從虛線示出的位置沿著箭頭A2的方向移動至實線示出的位置。 Referring to Figure 1, an embodiment of the present invention provides a system 1 for sorting silicon wafers. The system 1 for sorting silicon wafers may include: As shown schematically in Figure 1 by the parahedral hatched area, the conveyor belt 10 is used to convey a plurality of silicon wafers W to the processing station TS. For example, the conveyor belt 10 can be wound around a structure not shown in Figure 1 On the two rollers shown, the rotation of the two rollers rotates in the direction of arrow A1 shown in Figure 1, thereby driving the silicon wafer W placed on the conveyor belt 10 to move toward the processing station TS, where, Figure 1 3 silicon wafers are shown as an example; Detector 20, the detector 20 is used to detect the thickness value of each silicon wafer W being transported; A removal device 30 is provided between the detector 20 and the processing station TS. The removal device 30 is used to remove the thickness value that does not meet the requirements of the processing station TS during the transportation of the plurality of silicon wafers W. The silicon wafers W are removed from the conveyor belt 10 , for example, the silicon wafers W adjacent to the processing station TS in FIG. 1 are moved from the position shown by the dotted line along the direction of arrow A2 to the position shown by the solid line.
對於移出裝置30將矽片W與厚度值對應的方式，例如，檢測器20可以將順序傳送來的該多個矽片W的相應的多個厚度值按順序存儲為厚度值序列，而移出裝置30可以在矽片W被傳送過來時從厚度值序列中按順序讀取厚度值；又例如，可以將檢測器20與移出裝置30之間的間距設置成小於相鄰的兩個矽片W之間的間距，這樣，當檢測器20檢測到厚度值時可以立即發送給移出裝置30，移出裝置30可以根據即時接收的厚度值判斷下一矽片W的厚度是否滿足要求。又例如，在矽片W具有識別標記的情況下，檢測器20可以對矽片W的識別標記進行識別並將檢測出的厚度值與識別出的識別標記對應起來，而移出裝置30可以對矽片W的識別標記進行識別並查詢與識別出的識別標記相對應的厚度值。As for the way in which the removal device 30 corresponds the silicon wafers W to thickness values, for example, the detector 20 can sequentially store the corresponding multiple thickness values of the plurality of silicon wafers W transmitted sequentially as a sequence of thickness values, and the removal device 30 can 30 can read the thickness values sequentially from the thickness value sequence when the silicon wafer W is transferred; for another example, the distance between the detector 20 and the removal device 30 can be set to be smaller than the distance between two adjacent silicon wafers W. In this way, when the detector 20 detects the thickness value, it can be immediately sent to the removal device 30. The removal device 30 can determine whether the thickness of the next silicon wafer W meets the requirements based on the thickness value received immediately. For another example, when the silicon wafer W has an identification mark, the detector 20 can identify the identification mark of the silicon wafer W and associate the detected thickness value with the identified identification mark, and the removal device 30 can identify the silicon wafer W. The identification mark of the sheet W is identified and the thickness value corresponding to the identified identification mark is queried.
在根據本發明實施例的用於分選矽片的系統1中，當檢測到特定矽片W的厚度值不滿足處理站位TS的要求時：由於移出裝置30能夠自動地將該特定矽片W從傳送帶10移出，因此不需要人工的參與來完成該特定矽片W的取出，避免了人力成本的浪費；另外由於移出裝置30能夠在該特定矽片W被傳送的過程中將其移出，因此不需要使傳送帶10停止傳送作業，避免了產能降低的問題以及停機以後重新啟動導致的加工精度受到影響的問題。In the system 1 for sorting silicon wafers according to an embodiment of the present invention, when it is detected that the thickness value of a specific silicon wafer W does not meet the requirements of the processing station TS: the removal device 30 can automatically remove the specific silicon wafer W W is removed from the conveyor belt 10, so manual participation is not required to complete the removal of the specific silicon wafer W, avoiding waste of labor costs; in addition, since the removal device 30 can remove the specific silicon wafer W while it is being transported, Therefore, there is no need to stop the conveyor belt 10 from the conveying operation, thereby avoiding the problem of reduced production capacity and the problem of affecting the processing accuracy caused by restarting after shutdown.
在一個示例中，參見圖2並結合圖3，該傳送帶10可以包括限定出間隙G1的上游節段US1和下游節段DS1，通過虛線框示意性地示出的該檢測器20相對於該處理站位TS固定地設置並且包括： 光源211，該光源211用於發射與該傳送帶10平行並且穿過該間隙G1的光束211B，如在圖2中通過帶箭頭的線條示意性地示出的； 光屏212，該光屏212關於該傳送帶10與該光源211相對以使該光束211B照射在該光屏212上，其中，該矽片W在被傳送經過該間隙G1時對該光束211B產生遮擋，使得在該光屏212上形成與光束211B的被遮擋的部分對應的如在圖3中示出的暗區DA； 感測單元213，該感測單元213用於根據該暗區DA獲取該矽片W的與該傳送帶10的傳送方向TD垂直的任意截面的高度H，如在圖3中通過雙向箭頭示意性地示出的； 計算單元214，該計算單元214用於計算該任意截面的高度H的平均值來作為該厚度值。 In one example, referring to FIG. 2 in conjunction with FIG. 3 , the conveyor belt 10 may include an upstream segment US1 and a downstream segment DS1 defining a gap G1 , with the detector 20 schematically illustrated by a dashed box relative to the process. The station TS is permanently set up and consists of: A light source 211 for emitting a light beam 211B parallel to the conveyor belt 10 and passing through the gap G1, as schematically shown in Figure 2 by an arrowed line; The light screen 212 is opposite to the light source 211 with respect to the conveyor belt 10 so that the light beam 211B is illuminated on the light screen 212, wherein the silicon wafer W blocks the light beam 211B when being transported through the gap G1. , so that a dark area DA as shown in FIG. 3 corresponding to the blocked part of the light beam 211B is formed on the light screen 212; The sensing unit 213 is configured to obtain the height H of any section of the silicon wafer W perpendicular to the conveying direction TD of the conveyor belt 10 according to the dark area DA, as schematically represented by a double-headed arrow in FIG. 3 shown; The calculation unit 214 is used to calculate the average value of the height H of the arbitrary section as the thickness value.
在上述示例中，可以實現在運送過程中對矽片W的厚度進行檢測，由此避免了產能降低，並且矽片W的厚度值是通過取矽片W的與傳送帶10的傳送方向TD垂直的任意截面的高度H的平均值來獲得的，與目前通過僅對矽片邊緣的厚度進行測量相比，這樣獲得的厚度值更為精確，減小了將不滿足要求的矽片傳送至處理站位TS的可能性。In the above example, the thickness of the silicon wafer W can be detected during transportation, thereby avoiding a reduction in production capacity, and the thickness value of the silicon wafer W is obtained by taking the thickness value of the silicon wafer W perpendicular to the conveying direction TD of the conveyor belt 10 Compared with the current method of measuring only the thickness of the edge of the silicon wafer, the thickness value obtained in this way is more accurate and reduces the need to transfer silicon wafers that do not meet the requirements to the processing station. Possibility of bit TS.
在一個示例中，參見圖4，該傳送帶10可以包括上游節段US2和下游節段DS2，由虛線框示意性示出的該移出裝置30相對於該處理站位TS固定地設置在該上游節段US2與該下游節段DS2之間，並且該移出裝置30可以包括：In one example, referring to FIG. 4 , the conveyor belt 10 may include an upstream section US2 and a downstream section DS2 , and the removal device 30 schematically shown by the dotted box is fixedly disposed at the upstream section relative to the processing station TS. between section US2 and the downstream section DS2, and the removal device 30 may include:
由豎向剖面線填充的區域示意性地示出的多個第一滾輪31和由橫向剖面線填充的區域示意性地示出的多個第二滾輪32，其中，圖4中示例性地示出了4個第一滾輪31和4個第二滾輪32； 其中，該多個第一滾輪31和該多個第二滾輪32用於以交替的方式接收並支承從該上游節段US2傳送來的該矽片W； 其中，該多個第一滾輪31還用於通過繞自身的縱向軸線31A轉動將被支承的矽片W運送至該下游節段DS2，可以理解的是，第一滾輪31的縱向軸線31A垂直於傳送方向TD； 其中，該多個第二滾輪32還用於通過繞自身的縱向軸線32A轉動來沿著與該傳送方向TD垂直的方向運送被支承的矽片W，可以理解的是，第二滾輪32的縱向軸線32A平行於傳送方向TD。 A plurality of first rollers 31 is schematically shown by an area filled with vertical section lines and a plurality of second rollers 32 is schematically shown by an area filled by transverse section lines, wherein, as schematically shown in FIG. 4 Four first rollers 31 and four second rollers 32 are produced; Wherein, the plurality of first rollers 31 and the plurality of second rollers 32 are used to receive and support the silicon wafer W transferred from the upstream section US2 in an alternating manner; The plurality of first rollers 31 are also used to transport the supported silicon wafers W to the downstream section DS2 by rotating around their own longitudinal axis 31A. It can be understood that the longitudinal axis 31A of the first rollers 31 is perpendicular to Transmission direction TD; The plurality of second rollers 32 are also used to transport the supported silicon wafers W in a direction perpendicular to the transport direction TD by rotating around their own longitudinal axis 32A. It can be understood that the longitudinal direction of the second rollers 32 The axis 32A is parallel to the transport direction TD.
可以理解的是，上述示例中的上游節段US2與前一示例中的下游節段DS1可以是傳送帶10的同一節段，當然也可以是不同的節段。It can be understood that the upstream section US2 in the above example and the downstream section DS1 in the previous example can be the same section of the conveyor belt 10 , and of course can also be different sections.
在一個示例中，該多個第一滾輪31和該多個第二滾輪32可以通過升降交替地處於與該上游節段US2齊平的位置處，由此來實現以交替的方式接收並支承從上游節段US2傳送來的矽片W。In one example, the plurality of first rollers 31 and the plurality of second rollers 32 can be alternately positioned flush with the upstream section US2 by lifting and lowering, thereby receiving and supporting the slave in an alternating manner. The silicon chip W is transmitted from the upstream segment US2.
在一個示例中，參見圖5並結合圖6，該傳送帶10可以包括限定出間隙G2的上游節段US3和下游節段DS3，由虛線框示意性示出的該檢測器20相對於該處理站位TS固定地設置並且包括： 如在圖5中通過矽片W外周的4個圓環示意性地示出的夾持驅動單元221，該夾持驅動單元221用於在該矽片W被該傳送帶10傳送的過程中該矽片W的中心O（如在圖5中通過叉號示出的）位於該上游節段US3和該下游節段DS3之間時夾持該矽片W並驅動該矽片W繞自身的中心軸線WA（在圖6中示出）轉動，如在圖5中通過矽片W內的箭頭示出的； 設置在該傳送帶10上方的第一光學測距儀222，該第一光學測距儀222呈杆狀並且定位成與該間隙G2處於同一豎直平面中，該第一光學測距儀222用於在該矽片W被夾持的情況下測量自身與該矽片W的上表面中與該間隙G2平行的直徑上的任意點之間的距離DU，如在圖6中通過矽片W上方的雙向箭頭示意性地示出的，可以理解的是，在矽片W轉動的情況下，第一光學測距儀222與矽片W的上表面中任意直徑上的任意點或者說與整個上表面中的任意點之間的距離都可以測得； 設置在該傳送帶10下方的在圖6中示出的第二光學測距儀223，該第二光學測距儀223呈杆狀並且定位成與該間隙G2處於同一豎直平面中，該第二光學測距儀223用於在該矽片W被夾持的情況下通過該間隙G2測量自身與該矽片W的下表面中與該間隙G2平行的直徑上的任意點之間的距離DL，如在圖6中通過矽片W下方的雙向箭頭示意性地示出的，可以理解的是，在矽片W轉動的情況下，第二光學測距儀223與矽片W的下表面中任意直徑上的任意點或者說與整個下表面中的任意點之間的距離都可以測得； 計算單元224，該計算單元224元用於根據該第一光學測距儀222測量的距離DU和該第二光學測距儀223測量的距離DL計算該矽片W的任意點處的厚度，並且用於計算該任意點處的厚度的平均值來作為該厚度值。 In one example, referring to Figure 5 in conjunction with Figure 6, the conveyor belt 10 may include an upstream section US3 and a downstream section DS3 defining a gap G2, with the detector 20 schematically shown by the dashed box relative to the processing station. Bit TS is permanently set and consists of: As shown schematically in FIG. 5 by the four rings on the outer circumference of the silicon wafer W, the clamping driving unit 221 is used to transport the silicon wafer W by the conveyor belt 10 . The center O of the sheet W (as shown by a cross in Figure 5) is located between the upstream segment US3 and the downstream segment DS3, clamping the silicon sheet W and driving the silicon sheet W around its own central axis WA (shown in Figure 6) rotates, as shown in Figure 5 by the arrow within the silicon wafer W; The first optical distance meter 222 is disposed above the conveyor belt 10. The first optical distance meter 222 is rod-shaped and positioned in the same vertical plane as the gap G2. The first optical distance meter 222 is used for With the silicon chip W being clamped, measure the distance DU between itself and any point on the diameter of the upper surface of the silicon chip W that is parallel to the gap G2, as shown in Figure 6 through the top of the silicon chip W. The two-way arrows schematically show that, it can be understood that when the silicon wafer W rotates, the first optical rangefinder 222 is connected to any point on any diameter of the upper surface of the silicon wafer W or to the entire upper surface. The distance between any points in can be measured; The second optical distance meter 223 shown in FIG. 6 is provided below the conveyor belt 10. The second optical distance meter 223 is rod-shaped and is positioned in the same vertical plane as the gap G2. The optical distance meter 223 is used to measure the distance DL between itself and any point on the diameter of the lower surface of the silicon chip W that is parallel to the gap G2 through the gap G2 when the silicon chip W is clamped, As schematically shown in FIG. 6 by the two-way arrow below the silicon sheet W, it can be understood that when the silicon sheet W rotates, any of the second optical rangefinder 223 and the lower surface of the silicon sheet W Any point on the diameter or the distance to any point on the entire lower surface can be measured; The calculation unit 224 is configured to calculate the thickness at any point of the silicon wafer W according to the distance DU measured by the first optical distance meter 222 and the distance DL measured by the second optical distance meter 223, and Used to calculate the average value of the thickness at the arbitrary point as the thickness value.
可以理解的是：上述示例中的上游節段US3與前述示例中的上游節段US1可以是傳送帶10的同一節段，當然也可以是不同的節段；上述示例中的下游節段DS3與前述示例中的下游節段DS1可以是傳送帶10的同一節段，當然也可以是不同的節段；相應地，上述示例中的間隙G2與前述示例中的間隙G1可以是同一間隙，當然也可以是不同的間隙。It can be understood that: the upstream section US3 in the above example and the upstream section US1 in the previous example can be the same section of the conveyor belt 10, and of course can also be different sections; the downstream section DS3 in the above example is different from the previous section. The downstream segment DS1 in the example may be the same segment of the conveyor belt 10, or of course it may be a different segment; accordingly, the gap G2 in the above example and the gap G1 in the previous example may be the same gap, or of course they may be Different gaps.
在上述示例中，儘管矽片W會被夾持而使傳送中斷，但矽片W的厚度值是通過取矽片W的任意點處的厚度的平均值來獲得的，這樣獲得的厚度值的精確度進一步得到了提高。In the above example, although the silicon sheet W will be clamped and the transfer is interrupted, the thickness value of the silicon sheet W is obtained by taking the average of the thicknesses at any point of the silicon sheet W. The thickness value thus obtained is Accuracy has been further improved.
在一個示例中，參見圖7並結合圖8，該夾持驅動單元221可以包括： 多個滾輪2211，如圖7中示例性地示出的4個滾輪，每個滾輪2211具有周向延伸的凹槽2211R，如在圖8中示出的， 其中，該多個滾輪2211用於在該矽片W的周緣***到該凹槽2211R中的情況下將該矽片W夾持； 其中，該多個滾輪2211還用於通過繞自身的縱向軸線2211A（在圖8中示出）轉動使被夾持的矽片W繞自身的中心軸線轉動。 In one example, referring to Figure 7 in conjunction with Figure 8, the clamping driving unit 221 may include: A plurality of rollers 2211, such as 4 rollers exemplarily shown in Figure 7, each roller 2211 having a circumferentially extending groove 2211R, as shown in Figure 8, Wherein, the plurality of rollers 2211 are used to clamp the silicon chip W when the peripheral edge of the silicon chip W is inserted into the groove 2211R; The plurality of rollers 2211 are also used to rotate the clamped silicon chip W around its own central axis by rotating around its own longitudinal axis 2211A (shown in FIG. 8 ).
在一個示例中，該多個滾輪2211在夾持該矽片W的情況下可以沿著該矽片W的周向均勻分佈。這樣，實現了對矽片W更穩定的夾持。In one example, the plurality of rollers 2211 may be evenly distributed along the circumferential direction of the silicon sheet W when clamping the silicon sheet W. In this way, a more stable clamping of the silicon wafer W is achieved.
在一個示例中，該間隙G1和該間隙G2的寬度可以小於該矽片W的直徑的10%。這樣，能夠使得矽片以更平穩的方式被傳送。In one example, the widths of the gaps G1 and G2 may be less than 10% of the diameter of the silicon wafer W. In this way, the silicon wafers can be transported in a more stable manner.
在一個示例中，該處理站位TS可以為用於對矽片W進行研磨的站位。In one example, the processing station TS may be a station for grinding silicon wafers W.
在一個示例中，該矽片W可以為經歷研磨的矽片，並且該處理站位TS可以為用於對該矽片W進行清洗和乾燥的站位。In one example, the silicon wafer W may be a silicon wafer subjected to grinding, and the processing station TS may be a station for cleaning and drying the silicon wafer W.
需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict.
以上僅為本發明之較佳實施例，並非用來限定本發明之實施範圍，如果不脫離本發明之精神和範圍，對本發明進行修改或者等同替換，均應涵蓋在本發明申請專利範圍的保護範圍當中。The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.
1:用於分選矽片的系統 10:傳送帶 20:檢測器 30:移出裝置 31:第一滾輪 31A:縱向軸線 32:第二滾輪 32A:縱向軸線 211:光源 211B:光束 212:光屏 213:感測單元 214:計算單元 221:夾持驅動單元 2211:滾輪 2211A:縱向軸線 2211R:凹槽 222:第一光學測距儀 223:第二光學測距儀 224:計算單元 US1:上游節段 US2:上游節段 US3:上游節段 DS1:下游節段 DS2:下游節段 DS3:下游節段 TD:傳送方向 DA:暗區 A1:箭頭 A2:箭頭 W:矽片 WA:中心軸線 DU:距離 DL:距離 H:高度 TS:處理站位 O:中心軸線 G1:間隙 G2:間隙 1: System for sorting silicon wafers 10: Conveyor belt 20:Detector 30:Remove device 31:First roller 31A: Longitudinal axis 32:Second roller 32A: Longitudinal axis 211:Light source 211B:Beam 212:Light screen 213: Sensing unit 214:Computing unit 221: Clamping drive unit 2211:Roller 2211A: Longitudinal axis 2211R: Groove 222: The first optical rangefinder 223: Second optical rangefinder 224:Computing unit US1: upstream segment US2: upstream segment US3: upstream segment DS1: Downstream segment DS2: Downstream segment DS3: Downstream segment TD:Transmission direction DA: dark area A1: Arrow A2:Arrow W: silicon chip WA: central axis DU: distance DL: distance H: height TS: processing station O: central axis G1: Gap G2: Gap
圖1為根據本發明的實施例的用於分選矽片的系統的結構示意圖； 圖2為根據本發明的實施例的傳送帶以及檢測器的結構示意圖； 圖3為用於說明在光屏上形成的暗區的說明性示圖； 圖4為根據本發明的實施例的傳送帶以及移出裝置的結構示意圖； 圖5為根據本發明的另一實施例的傳送帶以及檢測器的結構示意圖； 圖6為沿著圖5中的線A-A剖切的剖視圖； 圖7為根據本發明的實施例的夾持驅動單元的結構示意圖； 圖8為根據本發明的實施例的夾持驅動單元的滾輪的結構示意圖。 Figure 1 is a schematic structural diagram of a system for sorting silicon wafers according to an embodiment of the present invention; Figure 2 is a schematic structural diagram of a conveyor belt and a detector according to an embodiment of the present invention; 3 is an explanatory diagram for explaining a dark area formed on the light screen; Figure 4 is a schematic structural diagram of a conveyor belt and a removal device according to an embodiment of the present invention; Figure 5 is a schematic structural diagram of a conveyor belt and a detector according to another embodiment of the present invention; Figure 6 is a cross-sectional view taken along line A-A in Figure 5; Figure 7 is a schematic structural diagram of a clamping drive unit according to an embodiment of the present invention; 8 is a schematic structural diagram of a roller clamping a driving unit according to an embodiment of the present invention.
1:用於分選矽片的系統 1: System for sorting silicon wafers
10:傳送帶 10: Conveyor belt
20:檢測器 20:Detector
30:移出裝置 30:Remove device
A1:箭頭 A1: Arrow
A2:箭頭 A2:Arrow
W:矽片 W: silicon chip
TS:處理站位 TS: processing station
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| JP2006189389A (en) * | 2005-01-07 | 2006-07-20 | Jfe Steel Kk | Optical thickness measuring method and device |
| CN102080949B (en) * | 2009-12-01 | 2013-11-06 | 无锡华润上华半导体有限公司 | Silicon epitaxial film thickness measuring method and device |
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| CN207248107U (en) * | 2017-10-17 | 2018-04-17 | 银川合宜科技有限公司 | A kind of device and workpiece screening system for detecting thickness of workpiece |
| CN208127148U (en) * | 2018-03-30 | 2018-11-20 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer detection device |
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| CN110538808A (en) * | 2019-09-12 | 2019-12-06 | 山东大海新能源发展有限公司 | automatic silicon wafer sorting system |
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