TWI821686B - Plasma treatment device - Google Patents
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- TWI821686B TWI821686B TW110122219A TW110122219A TWI821686B TW I821686 B TWI821686 B TW I821686B TW 110122219 A TW110122219 A TW 110122219A TW 110122219 A TW110122219 A TW 110122219A TW I821686 B TWI821686 B TW I821686B
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- 238000009832 plasma treatment Methods 0.000 title claims abstract description 8
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 51
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims description 35
- 238000012545 processing Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 15
- 230000000694 effects Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 230000002500 effect on skin Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
本發明揭露了一種電漿處理裝置，包括：反應腔；絕緣視窗，位於反應腔的頂部；線圈，位於絕緣視窗上，線圈包括第一端和第二端；第一線圈連接件，與第一端連接；第二線圈連接件，與第二端連接；射頻功率源、第一線圈連接件、線圈和第二線圈連接件形成一個回路，完成射頻功率源的接入，當射頻功率源經由線圈時會產生電磁場，該電磁場的磁力線穿過絕緣視窗進入反應腔內，再從反應腔穿過該絕緣視窗；當射頻功率源依次透過第一線圈連接件、線圈和第二線圈連接件時，第一遮罩件可遮罩第一線圈連接件上產生的電磁場，第二遮罩件可遮罩第二線圈連接件上產生的電磁場，減小對線圈產生的電磁場的影響，增加電漿的均勻性，進而增加晶圓蝕刻的均勻性。The invention discloses a plasma treatment device, which includes: a reaction chamber; an insulating window located on the top of the reaction chamber; a coil located on the insulating window, and the coil includes a first end and a second end; a first coil connector connected to the first The second coil connector is connected to the second end; the RF power source, the first coil connector, the coil and the second coil connector form a loop to complete the access of the RF power source. When the RF power source passes through the coil An electromagnetic field will be generated, and the magnetic lines of the electromagnetic field will enter the reaction chamber through the insulating window, and then pass through the insulating window from the reaction chamber; when the radio frequency power source passes through the first coil connector, the coil and the second coil connector in sequence, the A shielding part can shield the electromagnetic field generated on the first coil connecting part, and the second shielding part can shield the electromagnetic field generated on the second coil connecting part, reducing the impact on the electromagnetic field generated by the coil and increasing the uniformity of the plasma. properties, thereby increasing the uniformity of wafer etching.
Description
本發明涉及半導體製程設備領域，具體涉及一種電漿處理裝置。The invention relates to the field of semiconductor processing equipment, and in particular to a plasma treatment device.
現有的電漿處理裝置中，例如是一種電感耦合式的電漿蝕刻裝置，包含一反應腔， 反應腔內部設置內襯，用以保護反應腔內壁不被電漿腐蝕，反應腔側壁靠近絕緣視窗的一端設置氣體注入口，在其他實施例中也可以在絕緣視窗的中心區域設置氣體注入口，氣體注入口用於將反應氣體注入真空反應腔內，射頻功率源的射頻功率驅動電感耦合線圈產生較強的高頻交變磁場，使得反應腔內低壓的反應氣體被電離產生電漿，到達基片上表面的電漿可對基片進行蝕刻等處理；在反應腔的下游位置設置基座，基座上設置靜電吸盤，靜電吸盤內部設置一靜電電極，用於產生靜電吸力，以實現在製程過程中對待處理基片的支撐固定。電漿中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子，上述活性粒子可以和待處理基片的表面發生多種物理和化學反應，使得基片表面的形貌發生改變，即完成蝕刻過程。一偏置射頻功率源透過射頻匹配網路將偏置射頻電壓施加到基座上，用於控制電漿中帶電粒子的轟擊方向。真空反應腔的下方還設置一排氣泵，用於將反應副產物排出真空反應腔，維持反應腔的真空環境。An existing plasma processing device, for example, is an inductively coupled plasma etching device, which includes a reaction chamber. The reaction chamber is lined with a lining to protect the inner wall of the reaction chamber from being corroded by the plasma. The side walls of the reaction chamber are close to the insulation. A gas injection port is provided at one end of the window. In other embodiments, a gas injection port can also be provided in the central area of the insulating window. The gas injection port is used to inject reaction gas into the vacuum reaction chamber. The radio frequency power of the radio frequency power source drives the inductive coupling coil. Generates a strong high-frequency alternating magnetic field, which causes the low-pressure reaction gas in the reaction chamber to be ionized to generate plasma. The plasma that reaches the upper surface of the substrate can perform etching and other processing on the substrate; a base is set downstream of the reaction chamber. An electrostatic chuck is set on the base, and an electrostatic electrode is set inside the electrostatic chuck to generate electrostatic suction to support and fix the substrate to be processed during the manufacturing process. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate to be treated, causing the morphology of the substrate surface to change. , that is, the etching process is completed. A bias RF power source applies a bias RF voltage to the base through the RF matching network to control the bombardment direction of charged particles in the plasma. An exhaust pump is also provided below the vacuum reaction chamber to discharge the reaction by-products out of the vacuum reaction chamber and maintain the vacuum environment of the reaction chamber.
現有技術中，電漿處理裝置使用氣體輸送系統輸送氣體到其真空腔體中，線圈接入射頻功率源後產生電漿，從而對晶圓進行蝕刻。線圈產生的電磁場會受到外界的電磁場影響，降低產生的電漿的均勻性，進而降低晶圓蝕刻的均勻性。隨著蝕刻製程的發展，對蝕刻的均勻性要求越來越高。In the existing technology, the plasma processing device uses a gas delivery system to transport gas into its vacuum chamber, and the coil is connected to a radio frequency power source to generate plasma to etch the wafer. The electromagnetic field generated by the coil will be affected by the external electromagnetic field, reducing the uniformity of the generated plasma, thereby reducing the uniformity of wafer etching. With the development of etching processes, the requirements for etching uniformity are getting higher and higher.
本發明的目的在於提供一種電漿處理裝置，以降低第一線圈連接件和第二線圈連接件對線圈產生的電磁場的影響，增加電漿分佈的均勻性，提高晶圓蝕刻的均勻性。The object of the present invention is to provide a plasma processing device to reduce the influence of the first coil connector and the second coil connector on the electromagnetic field generated by the coil, increase the uniformity of plasma distribution, and improve the uniformity of wafer etching.
為了達到上述目的，本發明採用的技術方案如下：一種電漿處理裝置，包括：反應腔，該反應腔為真空反應腔；絕緣視窗，位於反應腔的頂部；線圈，位於絕緣視窗上，線圈包括第一端和第二端；第一線圈連接件，與第一端連接；第二線圈連接件，與第二端連接；射頻功率源、第一線圈連接件、線圈和第二線圈連接件形成一個回路，完成射頻功率源的接入，當射頻功率源經由線圈時會產生電磁場，該電磁場的磁力線穿過絕緣視窗進入反應腔內，再從反應腔穿過該絕緣視窗；第一遮罩件，套設在第一線圈連接件上，用於遮罩第一線圈連接件產生的電磁場；第二遮罩件，套設在第二線圈連接件上，用於遮罩第二線圈連接件產生的電磁場；射頻功率源在經由第一線圈連接件、第二線圈連接件時分別產生相應的電磁場，該電磁場會影響線圈產生的電磁場，影響電漿的均勻性，進而影響晶圓蝕刻的均勻性；射頻功率源，透過第一線圈連接件與線圈的第一端連接，從線圈的第二端經過第二線圈連接件形成射頻回路；當射頻功率源依次通過第一線圈連接件、線圈和第二線圈連接件時，第一遮罩件可遮罩第一線圈連接件上產生的電磁場，第二遮罩件可遮罩第二線圈連接件上產生的電磁場，減小對線圈產生的電磁場的影響，增加電漿的均勻性，進而增加晶圓蝕刻的均勻性。In order to achieve the above object, the technical solution adopted by the present invention is as follows: a plasma treatment device, including: a reaction chamber, which is a vacuum reaction chamber; an insulating window located on the top of the reaction chamber; a coil located on the insulating window, and the coil includes a first end and a second end; a first coil connector connected to the first end; a second coil connector connected to the second end; the radio frequency power source, the first coil connector, the coil and the second coil connector are formed A loop completes the access of the radio frequency power source. When the radio frequency power source passes through the coil, an electromagnetic field will be generated. The magnetic lines of the electromagnetic field pass through the insulating window and enter the reaction chamber, and then pass through the insulating window from the reaction chamber; the first cover member , set on the first coil connecting piece, used to shield the electromagnetic field generated by the first coil connecting piece; the second shielding piece, set on the second coil connecting piece, used to shield the electromagnetic field generated by the second coil connecting piece The electromagnetic field; the radio frequency power source generates corresponding electromagnetic fields when passing through the first coil connector and the second coil connector. This electromagnetic field will affect the electromagnetic field generated by the coil, affect the uniformity of the plasma, and then affect the uniformity of the wafer etching. ; The radio frequency power source is connected to the first end of the coil through the first coil connector, and a radio frequency loop is formed from the second end of the coil through the second coil connector; when the radio frequency power source passes through the first coil connector, the coil and the third coil connector in sequence; When connecting two coils, the first shielding part can shield the electromagnetic field generated on the first coil connecting part, and the second shielding part can shield the electromagnetic field generated on the second coil connecting part, reducing the impact on the electromagnetic field generated by the coil. Effect, increasing the uniformity of plasma, thereby increasing the uniformity of wafer etching.
可選地，第一遮罩件與第一線圈連接件之間設有第一絕緣層，第一絕緣層在第一遮罩件和第一線圈連接件之間起到絕緣效果；及/或，第二遮罩件與第二線圈連接件之間設有第二絕緣層，第二絕緣層在第二遮罩件和第二線圈連接件之間起到絕緣效果。Optionally, a first insulation layer is provided between the first cover member and the first coil connector, and the first insulation layer provides an insulation effect between the first cover member and the first coil connector; and/or , a second insulating layer is provided between the second shielding member and the second coil connecting member, and the second insulating layer plays an insulating effect between the second shielding member and the second coil connecting member.
可選地，第一遮罩件及/或第二遮罩件為層狀結構。Optionally, the first covering member and/or the second covering member have a layered structure.
可選地，層狀結構的最小厚度為1毫米，1毫米為可完全遮罩第一線圈連接件/第二線圈連接件所產生的電磁場的最小厚度。Optionally, the minimum thickness of the layered structure is 1 mm, which is the minimum thickness that can completely shield the electromagnetic field generated by the first coil connecting member/second coil connecting member.
可選地，第一遮罩件及/或第二遮罩件為鋁或紫銅。Optionally, the first cover member and/or the second cover member are aluminum or copper.
可選地，第一線圈連接件包括一第一立桿、一第一橫桿和一第二立桿，第一立桿和第二立桿分別與第一橫桿的兩端固定連接，第一立桿和第三立桿均垂直於線圈所在的平面，第一橫桿不與線圈所在的平面垂直；第一遮罩件套設在第一橫桿外；及/或，第二線圈連接件包括一第三立桿、一第二橫桿和一第四立桿，第三立桿和第四立桿分別與第二橫桿的兩端固定連接，第三立桿和第四立桿均垂直於線圈所在的平面，第二橫桿不與線圈所在的平面垂直；第二遮罩件套設在第二橫桿上。經大量的實驗發現，豎直方向上的第一立桿、第二立桿、第三立桿或第四立桿的電磁場主要位於絕緣視窗的上方；水平方向上的第一橫桿、第二橫桿產生的電磁場分佈在絕緣視窗的上方及下方，故絕緣層套設在第一橫桿、第二橫桿上，即可遮罩第一線圈連接件、第二線圈連接件所產生的絕大部分電磁場，節省絕緣層、遮罩層所需的材料。Optionally, the first coil connecting member includes a first upright pole, a first cross bar and a second upright pole. The first upright pole and the second upright pole are respectively fixedly connected to both ends of the first cross bar. The first vertical pole and the third vertical pole are both perpendicular to the plane where the coil is located, and the first horizontal rod is not perpendicular to the plane where the coil is located; the first cover member is set outside the first horizontal rod; and/or the second coil is connected The component includes a third vertical pole, a second horizontal pole and a fourth vertical pole. The third vertical pole and the fourth vertical pole are fixedly connected to both ends of the second horizontal pole respectively. The third vertical pole and the fourth vertical pole Both are perpendicular to the plane where the coil is located, and the second crossbar is not perpendicular to the plane where the coil is located; the second cover member is set on the second crossbar. After a large number of experiments, it was found that the electromagnetic field of the first, second, third or fourth pole in the vertical direction is mainly located above the insulation window; the first horizontal pole, the second pole in the horizontal direction The electromagnetic field generated by the crossbar is distributed above and below the insulation window, so the insulation layer is placed on the first crossbar and the second crossbar to cover the insulation generated by the first coil connector and the second coil connector. Most electromagnetic fields, saving materials required for insulation layers and masking layers.
可選地，第一遮罩件還設於第一立桿及/或第二立桿外，第二遮罩件還設於第三立桿及/或第四立桿外。Optionally, the first cover member is also provided outside the first upright pole and/or the second upright pole, and the second cover member is also provided outside the third upright pole and/or the fourth upright pole.
可選地，第一遮罩件與第一線圈連接件之間形成有第一環形腔體，且第一遮罩件與第一線圈連接件之間的相對位置固定，第一環形腔體在第一遮罩件和第一線圈連接件之間起到絕緣效果。Optionally, a first annular cavity is formed between the first cover member and the first coil connector, and the relative position between the first cover member and the first coil connector is fixed, and the first annular cavity The body plays an insulating effect between the first cover part and the first coil connecting part.
可選地，第一遮罩件與第一線圈連接件之間安裝有第三絕緣層和第四絕緣層，第三絕緣層和第四絕緣層將第一環形腔體封閉，使第一環形腔體的埠處封閉以形成密閉的第一環形腔體，進而使第一線圈連接件產生的電磁場不會經由第一環形腔體的端部敞口處流出，以增加遮罩效果。Optionally, a third insulation layer and a fourth insulation layer are installed between the first cover member and the first coil connecting member. The third insulation layer and the fourth insulation layer seal the first annular cavity so that the first The port of the annular cavity is closed to form a sealed first annular cavity, so that the electromagnetic field generated by the first coil connecting member will not flow out through the open end of the first annular cavity, thereby increasing the shielding Effect.
可選地，第二遮罩件與第二線圈連接件之間形成有第二環形腔體，且第二遮罩件與第二線圈連接件之間的相對位置固定，第二環形腔體在第二遮罩件和第二線圈連接件之間起到絕緣的效果。Optionally, a second annular cavity is formed between the second cover member and the second coil connector, and the relative position between the second cover member and the second coil connector is fixed, and the second annular cavity is in The second shielding member and the second coil connecting member have an insulating effect.
可選地，第二遮罩件與第二線圈連接件之間安裝有第五絕緣層和第六絕緣層，第五絕緣層和第六絕緣層將第二環形腔體封閉，使第二環形腔體的埠處封閉以形成封閉的第二環形腔體，進而使第二線圈連接件產生的電磁場不會經由第二環形腔體的端部敞口處流出，以增加遮罩效果。Optionally, a fifth insulation layer and a sixth insulation layer are installed between the second cover member and the second coil connecting member. The fifth insulation layer and the sixth insulation layer seal the second annular cavity, making the second annular cavity The port of the cavity is closed to form a closed second annular cavity, so that the electromagnetic field generated by the second coil connecting member will not flow out through the open end of the second annular cavity, thereby increasing the shielding effect.
與現有技術相比，本發明技術方案至少具有以下優點之一：Compared with the existing technology, the technical solution of the present invention has at least one of the following advantages:
(1)當射頻功率源依次通過第一線圈連接件、線圈和第二線圈連接件時，由於第一遮罩件可遮罩第一線圈連接件上產生的電磁場，第二遮罩件可遮罩第二線圈連接件上產生的電磁場，因此，能夠減小第一線圈連接件和第二線圈連接件對線圈產生的電磁場的影響，使電漿的分佈較均勻，因此，有利於提高晶圓蝕刻的均勻性；(1) When the radio frequency power source passes through the first coil connector, the coil and the second coil connector in sequence, since the first shield member can shield the electromagnetic field generated on the first coil connector, the second shield member can shield The electromagnetic field generated by the second coil connecting member can be shielded, thereby reducing the influence of the first coil connecting member and the second coil connecting member on the electromagnetic field generated by the coil, making the distribution of plasma more uniform, thus conducive to improving the wafer efficiency. Etching uniformity;
(2)第一遮罩件與第一線圈連接件之間設有第一絕緣層或第一環形腔體，在第一遮罩件和第一線圈連接件之間起到絕緣效果；第二遮罩件與第二線圈連接件之間設有第二絕緣層或第二環形腔體，在第二遮罩件和第二線圈連接件之間起到絕緣效果，使射頻電源不會流經第一遮罩件或第二遮罩件，第一遮罩件、第二遮罩件在遮罩第一線圈連接件、第二線圈連接件產生的電磁場的同時，其本身不產生電磁場；(2) A first insulation layer or a first annular cavity is provided between the first cover member and the first coil connector to provide an insulation effect between the first cover member and the first coil connector; A second insulation layer or a second annular cavity is provided between the second shielding member and the second coil connecting member to provide an insulation effect between the second shielding member and the second coil connecting member so that the radio frequency power does not flow. Through the first shielding member or the second shielding member, the first shielding member and the second shielding member shield the electromagnetic fields generated by the first coil connecting member and the second coil connecting member, and at the same time, they themselves do not generate electromagnetic fields;
(3)第一橫桿、第二橫桿產生的電磁場分佈在絕緣視窗的上方及下方易對電漿的均勻性造成影響，故絕緣層套設在第一橫桿、第二橫桿上，即可遮罩第一線圈連接件、第二線圈連接件所產生的絕大部分電磁場，能夠降低第一線圈連接件和第二線圈連接件對線圈產生的電磁場的影響，有利於增加電漿分佈的均勻性，提高晶圓蝕刻的均勻性。(3) The electromagnetic field generated by the first and second crossbars is distributed above and below the insulating window and can easily affect the uniformity of the plasma. Therefore, the insulation layer is sleeved on the first and second crossbars. That is, most of the electromagnetic fields generated by the first coil connector and the second coil connector can be shielded, which can reduce the influence of the first coil connector and the second coil connector on the electromagnetic field generated by the coil, which is beneficial to increasing plasma distribution. uniformity and improve the uniformity of wafer etching.
以下結合圖1至圖4具體實施方式對本發明作進一步詳細說明。根據下面說明，本發明的優點和特徵將更清楚。需要說明的是，圖式採用非常簡化的形式且均使用非精準的比例，僅用以方便、明晰地輔助說明本發明實施方式的目的。為了使本發明的目的、特徵和優點能夠更加明顯易懂，請參閱附圖。須知，本說明書所附圖式所繪示的結構、比例、大小等，均僅用以配合說明書所揭示的內容，以供熟悉此技術的人士瞭解與閱讀，並非用以限定本發明實施的限定條件，故不具技術上的實質意義，任何結構的修飾、比例關係的改變或大小的調整，在不影響本發明所能產生的功效及所能達成的目的下，均應仍落在本發明所揭示的技術內容能涵蓋的範圍內。The present invention will be further described in detail below with reference to the specific embodiments of FIGS. 1 to 4 . The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use imprecise proportions, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention. In order to make the objects, features and advantages of the present invention more apparent, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to coordinate with the content disclosed in the specification for the understanding and reading of those familiar with this technology, and are not used to limit the implementation of the present invention. conditions, it has no technical substantive significance. Any structural modifications, changes in proportions or adjustments in size should still fall within the scope of the present invention without affecting the efficacy and purpose of the present invention. Within the scope of the disclosed technical content.
需要說明的是，在本文中，諸如第一和第二等之類的關係術語僅僅用來將一個實體或者操作與另一個實體或操作區分開來，而不一定要求或者暗示這些實體或操作之間存在任何這種實際的關係或者順序。而且，術語「包括」、「包含」或者其任何其他變體意在涵蓋非排他性的包含，從而使得包括一系列要素的過程、方法、物品或者現場設備不僅包括那些要素，而且還包括沒有明確列出的其他要素，或者是還包括為這種過程、方法、物品或者現場設備所固有的要素。在沒有更多限制的情況下，由語句「包括一個……」限定的要素，並不排除在包括要素的過程、方法、物品或者現場設備中還存在另外的相同要素。It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations are mutually exclusive. any such actual relationship or sequence exists between them. Furthermore, the terms “comprises,” “comprising” or any other variation thereof are intended to cover a non-exclusive inclusion such that a process, method, article, or field device that includes a list of elements includes not only those elements, but also elements not expressly listed or other elements inherent to such process, method, article or field equipment. Without further limitation, an element qualified by the statement "comprises a..." does not exclude the presence of additional identical elements in the process, method, article, or field device that includes the element.
圖1為本發明一種電漿處理裝置的結構示意圖。Figure 1 is a schematic structural diagram of a plasma treatment device of the present invention.
請參閱圖1，電漿處理裝置包括：反應腔200，該反應腔200為真空反應腔，反應腔200內放置有靜電吸盤100，靜電吸盤100內部設置有靜電電極，用於產生靜電吸力，以實現在電漿蝕刻製程中對待處理的晶圓進行固定，靜電吸盤100下方設置有加熱裝置，用於對製程中晶圓的溫度進行控制；絕緣視窗300，位於反應腔200的頂部；線圈400，位於絕緣視窗300上，外接射頻功率源之後產生高頻交變磁場，用於電離接入反應腔內的反應氣體以產生電漿，線圈400包括第一端和第二端；第一線圈連接件600，與第一端連接；第二線圈連接件500，與第二端連接；射頻功率源、第一線圈連接件600、線圈400和第二線圈連接件500形成一個回路，完成射頻功率源的接入，當射頻功率源經由線圈400時會產生電磁場，該電磁場的磁力線穿過絕緣視窗300進入反應腔200內，再從反應腔200穿過該絕緣視窗300；第一遮罩件602，套設在第一線圈連接件600上，用於遮罩第一線圈連接件600產生的電磁場；第二遮罩件502，套設在第二線圈連接件500上，用於遮罩第二線圈連接件500產生的電磁場；射頻功率源透過第一線圈連接件600與線圈400的第一端連接，從線圈400的第二端經過第二線圈連接件500再次返回射頻功率源形成射頻回路；當射頻功率源依次通過第一線圈連接件600、線圈400和第二線圈連接件500時，第一遮罩件602可遮罩第一線圈連接件600上產生的電磁場，第二遮罩件502可遮罩第二線圈連接件500上產生的電磁場，減小第一線圈連接件600和第二線圈連接件500對線圈400產生的電磁場的影響，增加電漿的均勻性，進而增加晶圓蝕刻的均勻性。Please refer to Figure 1. The plasma treatment device includes: a reaction chamber 200. The reaction chamber 200 is a vacuum reaction chamber. An electrostatic chuck 100 is placed in the reaction chamber 200. An electrostatic electrode is provided inside the electrostatic chuck 100 for generating electrostatic suction. To achieve fixation of the wafer to be processed during the plasma etching process, a heating device is provided below the electrostatic chuck 100 for controlling the temperature of the wafer during the process; the insulation window 300 is located on the top of the reaction chamber 200; the coil 400, Located on the insulating window 300, an external radio frequency power source is connected to generate a high-frequency alternating magnetic field for ionizing the reaction gas in the reaction chamber to generate plasma. The coil 400 includes a first end and a second end; a first coil connector 600, connected to the first end; the second coil connector 500, connected to the second end; the radio frequency power source, the first coil connector 600, the coil 400 and the second coil connector 500 form a loop to complete the radio frequency power source. When the radio frequency power source passes through the coil 400, an electromagnetic field will be generated, and the magnetic lines of the electromagnetic field will pass through the insulating window 300 and enter the reaction chamber 200, and then pass through the insulating window 300 from the reaction chamber 200; the first cover member 602, is provided on the first coil connector 600 for shielding the electromagnetic field generated by the first coil connector 600; the second shield member 502 is sleeved on the second coil connector 500 and is used for shielding the second coil connection The electromagnetic field generated by the component 500; the radio frequency power source is connected to the first end of the coil 400 through the first coil connector 600, and returns to the radio frequency power source from the second end of the coil 400 through the second coil connector 500 to form a radio frequency loop; when the radio frequency When the power source passes through the first coil connection part 600, the coil 400 and the second coil connection part 500 in sequence, the first shielding part 602 can shield the electromagnetic field generated on the first coil connection part 600, and the second shielding part 502 can shield Cover the electromagnetic field generated on the second coil connector 500, reduce the influence of the first coil connector 600 and the second coil connector 500 on the electromagnetic field generated by the coil 400, increase the uniformity of the plasma, and thereby increase the uniformity of the wafer etching. sex.
在本實施例中，以第一線圈連接件600的形狀為彎折結構進行示意性說明，請參考圖2，第一線圈連接件600包括：第一立桿6001、第一橫桿6002和第二立桿6003，第一立桿6001和第二立桿6003分別與第一橫桿6002的兩端固定連接，第一遮罩件602套設在第一立桿6001、第一橫桿6002和第二立桿6003外；第一橫桿6002可以為水平桿，其也可以與水平面具有一定的傾斜角度，第一立桿6001、第二立桿6003可以為垂直桿，其也可以與豎直方向具有一定的傾斜角度。豎直方向上的第一立桿6001、第二立桿6003產生的電磁場主要位於絕緣視窗300的上方；水平方向上的第一橫桿6002產生的電磁場分佈在絕緣視窗300的上方及下方，故第一遮罩件套設在第一橫桿6002，即可遮罩第一線圈連接件600所產生的絕大部分電磁場。實際上，第一線圈連接件的形狀不限，還可以為豎直結構或者其它形狀的結構，只要可達到接入射頻電源後形成射頻回路的技術效果即可。In this embodiment, the shape of the first coil connector 600 is used as a bending structure for schematic explanation. Please refer to Figure 2. The first coil connector 600 includes: a first vertical rod 6001, a first horizontal rod 6002 and a Two vertical poles 6003, the first vertical pole 6001 and the second vertical pole 6003 are fixedly connected to the two ends of the first horizontal pole 6002 respectively, and the first cover member 602 is sleeved on the first vertical pole 6001, the first horizontal pole 6002 and the second vertical pole 6003. In addition to the second vertical pole 6003; the first horizontal pole 6002 can be a horizontal pole, which can also have a certain inclination angle with the horizontal plane; the first vertical pole 6001 and the second vertical pole 6003 can be vertical poles, which can also be vertically aligned with each other. The direction has a certain tilt angle. The electromagnetic field generated by the first vertical pole 6001 and the second vertical pole 6003 in the vertical direction is mainly located above the insulation window 300; the electromagnetic field generated by the first horizontal rod 6002 in the horizontal direction is distributed above and below the insulation window 300, so The first shielding member is set on the first crossbar 6002 to shield most of the electromagnetic field generated by the first coil connecting member 600 . In fact, the shape of the first coil connector is not limited, and it can also be a vertical structure or a structure of other shapes, as long as the technical effect of forming a radio frequency loop after being connected to the radio frequency power supply can be achieved.
第二線圈連接件500的形狀為任一上述的第一線圈連接件600可能的結構(例如圖1中以第二線圈連接件500為折彎結構進行示意性說明，其包括第三立桿、第二橫桿和第四立桿，實際上，第二線圈連接件500的形狀也不作限定)，後續僅記載第一線圈連接件600的具體結構，第二線圈連接件500的具體結構與第一線圈連接件600相同或者類似，在此不再贅述。The shape of the second coil connector 500 is any of the above-mentioned possible structures of the first coil connector 600 (for example, the second coil connector 500 is schematically illustrated in FIG. 1 as a bent structure, which includes a third vertical pole, The second horizontal bar and the fourth vertical bar (in fact, the shape of the second coil connector 500 is not limited). Only the specific structure of the first coil connector 600 will be described later. The specific structure of the second coil connector 500 is the same as that of the second coil connector 500. A coil connecting member 600 is the same or similar and will not be described again here.
第一遮罩件602和第二遮罩件502的材料為鋁或紫銅，因此，第一遮罩件602和第二遮罩件502具有電磁場遮罩的作用。The material of the first shielding member 602 and the second shielding member 502 is aluminum or copper. Therefore, the first shielding member 602 and the second shielding member 502 have the function of electromagnetic field shielding.
在本實施例中，以第一遮罩件602和第二遮罩件502均為層狀結構進行示意性說明；層狀結構的最小厚度為1毫米，1毫米為可完全遮罩第一線圈連接件600或第二線圈連接件500所產生的電磁場的最小厚度。In this embodiment, the first covering member 602 and the second covering member 502 are schematically illustrated with a layered structure; the minimum thickness of the layered structure is 1 mm, and 1 mm can completely cover the first coil. The minimum thickness of the electromagnetic field generated by the connector 600 or the second coil connector 500.
如下以第一線圈連接件600為彎折結構，且第一遮罩件602設於第一橫桿6002、第一立桿6001以及第二立桿6003外為例具體說明如何利用第一遮罩件602實現磁遮罩的。The following takes the first coil connecting member 600 as a bent structure, and the first cover member 602 is provided outside the first horizontal bar 6002, the first vertical bar 6001 and the second vertical bar 6003 as an example to specifically describe how to use the first cover member. 602 implements magnetic masking.
實施例一：Example 1:
請參考圖1和圖2，圖1為一種電漿處理裝置的結構示意圖，圖2為圖1中區域A的放大結構示意圖。Please refer to Figures 1 and 2. Figure 1 is a schematic structural diagram of a plasma processing device, and Figure 2 is an enlarged structural schematic diagram of area A in Figure 1.
在本實施例中，由於第一遮罩件602不僅設於第一橫桿6002，還設於第一立桿6001、第二立桿6003，使得第一線圈連接件600不僅水平方向的磁力線而且豎直方向的磁力線都能夠被第一遮罩件遮罩，則第一線圈連接件對線圈的影響較小，能夠提高電漿分佈的均勻性，進而提高晶圓蝕刻的均勻性。In this embodiment, since the first shielding member 602 is not only provided on the first horizontal bar 6002, but also on the first vertical pole 6001 and the second vertical pole 6003, the first coil connecting member 600 not only detects the horizontal magnetic field lines but also the first vertical pole 6001 and the second vertical pole 6003. If all the magnetic lines of force in the vertical direction can be shielded by the first shielding member, the first coil connecting member has less influence on the coil, which can improve the uniformity of plasma distribution and thereby improve the uniformity of wafer etching.
在本實施例中，還在第一遮罩件602與第一線圈連接件600之間設置第一絕緣層601，第一絕緣層601的材料可以是各種塑膠，比如特氟龍、聚醚醯亞胺等。由於第一絕緣層601具有良好的絕緣能力，使第一絕緣層601能夠防止電流的集膚效應發生在第一線圈連接件600上。In this embodiment, a first insulating layer 601 is also provided between the first cover member 602 and the first coil connecting member 600. The material of the first insulating layer 601 may be various plastics, such as Teflon, polyether resin. imine etc. Since the first insulating layer 601 has good insulating ability, the first insulating layer 601 can prevent the skin effect of current from occurring on the first coil connector 600 .
在其它實施例中，第一遮罩件602僅設於第一橫桿6002外，第二遮罩件僅設於第二橫桿外；或者，第一遮罩件602除了設置在第一橫桿6002外，還設置在第一立桿6001和第二立桿6003中的一個外部，第二遮罩件除了設置在第二橫桿外，還設置在第三立桿和第四立桿中的一個外部。In other embodiments, the first covering member 602 is only provided outside the first cross bar 6002, and the second covering member is only provided outside the second cross bar; or, the first covering member 602 is not only provided outside the first cross bar. In addition to the rod 6002, it is also provided on the outside of one of the first vertical pole 6001 and the second vertical pole 6003. In addition to being provided on the second horizontal rod, the second cover member is also provided on the third vertical pole and the fourth vertical pole. of an exterior.
實施例二：Example 2:
圖3為第一種可替換圖1中區域A的結構示意圖。FIG. 3 is a schematic structural diagram of the first alternative region A in FIG. 1 .
在本實施例中，第一遮罩件602與第一線圈連接件600之間不設置第一絕緣層601，第一遮罩件602與第一線圈連接件600之間形成有第一環形腔體，且第一遮罩件602與第一線圈連接件600之間的相對位置固定，第一遮罩件602透過一固定端(該固定端為任意可支撐該第一遮罩件602的結構)進行支撐，第一環形腔體在第一遮罩件602和第一線圈連接件600之間起到絕緣效果，說明環形腔體也可以起到絕緣作用，防止電流的集膚效應發生在第一線圈連接件600和第二線圈連接件500上。In this embodiment, the first insulating layer 601 is not provided between the first shielding member 602 and the first coil connecting member 600, and a first annular shape is formed between the first shielding member 602 and the first coil connecting member 600. cavity, and the relative position between the first cover member 602 and the first coil connecting member 600 is fixed, the first cover member 602 passes through a fixed end (the fixed end is any that can support the first cover member 602 structure) for support, the first annular cavity plays an insulating effect between the first shield member 602 and the first coil connecting member 600, indicating that the annular cavity can also play an insulating effect to prevent the skin effect of current from occurring. On the first coil connector 600 and the second coil connector 500 .
在其它實施例中，第一遮罩件僅設於第一橫桿6002外，第二遮罩件僅設於第二橫桿外；或者，第一遮罩件除了設置在第一橫桿6002外部，還設置在第一立桿6001和第二立桿6003中的一個外部，第二遮罩件除了設置在第二橫桿外部，還設置在第三立桿和第四立桿中的一個外部。In other embodiments, the first covering member is only disposed outside the first cross bar 6002, and the second covering member is only disposed outside the second cross bar; or, the first covering member is disposed outside the first cross bar 6002. Externally, it is also arranged outside one of the first vertical pole 6001 and the second vertical pole 6003. In addition to being arranged outside the second horizontal pole, the second covering member is also arranged on one of the third vertical pole and the fourth vertical pole. external.
實施例三 ：Embodiment three:
圖4為第二種可替換圖1中區域A的結構示意圖。Figure 4 is a schematic structural diagram of the second alternative area A in Figure 1.
在本實施例中，第一遮罩件與第一線圈連接件之間部分設置絕緣層，這樣設置的意義在於：In this embodiment, an insulating layer is partially provided between the first cover member and the first coil connecting member. The significance of this arrangement is:
第一遮罩件602與第一線圈連接件600之間安裝有第三絕緣層604和第四絕緣層605，第三絕緣層604和第四絕緣層605將第一環形腔體封閉，使第一環形腔體的埠處封閉以形成密閉的第一環形腔體，進而使第一線圈連接件600產生的電磁場不會經由第一環形腔體的端部敞口處流出，以增加遮罩效果，增加蝕刻的均勻性。另外，第一遮罩件602套設在第一線圈連接件600上，且二者之間透過第三絕緣層604、第四絕緣層605進行支撐，第一遮罩件602無需支撐端或支撐面即可將第一遮罩件602與第一線圈連接件600之間的相對位置固定，另外第三絕緣層604、第四絕緣層605可以將第一橫桿6002上產生的電磁場遮罩，使電磁場不會外泄，電磁遮罩效果更佳。第二遮罩件類似，不再贅述。A third insulating layer 604 and a fourth insulating layer 605 are installed between the first cover member 602 and the first coil connecting member 600. The third insulating layer 604 and the fourth insulating layer 605 seal the first annular cavity, so that The port of the first annular cavity is closed to form a sealed first annular cavity, so that the electromagnetic field generated by the first coil connecting member 600 will not flow out through the open end of the first annular cavity, so as to Increase the masking effect and increase the uniformity of etching. In addition, the first shielding member 602 is sleeved on the first coil connecting member 600, and is supported between the two through the third insulating layer 604 and the fourth insulating layer 605. The first shielding member 602 does not need a supporting end or support. surface can fix the relative position between the first shielding member 602 and the first coil connecting member 600. In addition, the third insulating layer 604 and the fourth insulating layer 605 can shield the electromagnetic field generated on the first crossbar 6002. The electromagnetic field will not leak out and the electromagnetic shielding effect will be better. The second masking member is similar and will not be described again.
在其它實施例中，第一遮罩件僅設於第一橫桿6002外部，第二遮罩件僅設於第二橫桿外部；或者，第一遮罩件除了設置在第一橫桿6002外部，還設置在第一立桿6001和第二立桿6003中的一個外部，第二遮罩件除了設置在第二橫桿外部，還設置在第三立桿和第四立桿中的一個外部。以上以第一線圈連接件為例進行說明，在本實施例中，第二線圈連接件的形狀與第一線圈連接件的形狀相同。在其它實施例中，第二線圈連接件的形狀與第一線圈連接件的形狀不同。In other embodiments, the first covering member is only provided outside the first cross bar 6002, and the second covering member is only provided outside the second cross bar; or, the first covering member is not only provided outside the first cross bar 6002 Externally, it is also arranged outside one of the first vertical pole 6001 and the second vertical pole 6003. In addition to being arranged outside the second horizontal pole, the second covering member is also arranged on one of the third vertical pole and the fourth vertical pole. external. The above description takes the first coil connector as an example. In this embodiment, the shape of the second coil connector is the same as the shape of the first coil connector. In other embodiments, the second coil connector has a different shape than the first coil connector.
第二線圈連接件外設置的第二遮罩件，用於遮罩第二線圈連接件產生的電磁場對線圈造成影響。第二線圈連接件與第二遮罩件之間也可以如圖2至圖4設計，即：第二線圈連接件與第二遮罩件之間設置絕緣層，或者第二遮罩件與第二線圈連接桿之間設置空腔，或者第二遮罩件與第二線圈連接桿之間僅設置部分絕緣層，以防止電流的趨膚效應發生在第二線圈連接件500。The second shielding member provided outside the second coil connecting member is used to shield the electromagnetic field generated by the second coil connecting member from affecting the coil. The second coil connecting piece and the second shielding piece can also be designed as shown in Figures 2 to 4, that is, an insulation layer is provided between the second coil connecting piece and the second shielding piece, or the second shielding piece and the second shielding piece A cavity is provided between the two coil connecting rods, or only a partial insulation layer is provided between the second cover member and the second coil connecting rod to prevent the skin effect of current from occurring in the second coil connecting member 500 .
儘管本發明的內容已經透過上述優選實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域之具備通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的，例如，對線圈連接件的形狀進行常規替換。因此，本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing description, for example, routine substitutions of the shape of the coil connectors. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.
100:靜電吸盤 200:反應腔 300:絕緣視窗 400:線圈 500:第二線圈連接件 502:第二遮罩件 600:第一線圈連接件 601:第一絕緣層 602:第一遮罩件 604:第三絕緣層 605:第四絕緣層 6001:第一立桿 6002:第一橫桿 6003:第二立桿100:Electrostatic sucker 200:Reaction chamber 300:Insulated window 400: coil 500: Second coil connection piece 502: Second mask piece 600: First coil connection piece 601: First insulation layer 602: First mask piece 604:Third insulation layer 605: The fourth insulation layer 6001:The first pole 6002:First crossbar 6003: The second pole
圖1為本發明一種電漿處理裝置的結構示意圖； 圖2為圖1中區域A的放大結構示意圖； 圖3為第一種可替換圖1中區域A的結構示意圖； 圖4為第二種可替換圖1中區域A的結構示意圖。Figure 1 is a schematic structural diagram of a plasma treatment device according to the present invention; Figure 2 is an enlarged structural diagram of area A in Figure 1; Figure 3 is a schematic structural diagram of the first alternative area A in Figure 1; Figure 4 is a schematic structural diagram of the second alternative area A in Figure 1.
100:靜電吸盤100:Electrostatic sucker
200:反應腔200:Reaction chamber
300:絕緣視窗300:Insulated window
400:線圈400: coil
500:第二線圈連接件500: Second coil connection piece
502:第二遮罩件502: Second mask piece
600:第一線圈連接件600: First coil connection piece
601:第一絕緣層601: First insulation layer
602:第一遮罩件602: First mask piece
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