TWI821542B - 光罩、光罩之製造方法、及顯示裝置之製造方法 - Google Patents

光罩、光罩之製造方法、及顯示裝置之製造方法 Download PDF

Info

Publication number: TWI821542B
Authority: TW; Taiwan
Prior art keywords: pattern; mentioned; light; film; photomask
Prior art date: 2019-03-28

Application number

TW109107827A

Other languages

English (en)

Chinese (zh)

Other versions

TW202041967A (zh

Inventor

山口昇

Original Assignee

日商Ｈｏｙａ股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-03-28

Filing date

2020-03-10

Publication date

2023-11-11

2020-03-10 Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司

2020-11-16 Publication of TW202041967A publication Critical patent/TW202041967A/zh

2023-11-11 Application granted granted Critical

2023-11-11 Publication of TWI821542B publication Critical patent/TWI821542B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 77
239000010408 film Substances 0.000 claims abstract description 201
238000005530 etching Methods 0.000 claims abstract description 180
239000000758 substrate Substances 0.000 claims abstract description 93
239000012788 optical film Substances 0.000 claims abstract description 78
238000011161 development Methods 0.000 claims abstract description 62
238000012546 transfer Methods 0.000 claims abstract description 52
238000000034 method Methods 0.000 claims description 31
238000001039 wet etching Methods 0.000 claims description 13
239000000203 mixture Substances 0.000 claims description 10
230000009467 reduction Effects 0.000 claims description 10
230000003667 anti-reflective effect Effects 0.000 claims description 8
239000000463 material Substances 0.000 claims description 8
238000000059 patterning Methods 0.000 claims description 5
230000008034 disappearance Effects 0.000 claims description 2
238000005259 measurement Methods 0.000 abstract description 12
239000007788 liquid Substances 0.000 description 14
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
239000011651 chromium Substances 0.000 description 7
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
229910052804 chromium Inorganic materials 0.000 description 6
230000003287 optical effect Effects 0.000 description 6
230000010363 phase shift Effects 0.000 description 6
YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000001678 irradiating effect Effects 0.000 description 5
229910021344 molybdenum silicide Inorganic materials 0.000 description 5
239000000243 solution Substances 0.000 description 5
238000002834 transmittance Methods 0.000 description 5
239000004973 liquid crystal related substance Substances 0.000 description 4
238000000206 photolithography Methods 0.000 description 4
125000006850 spacer group Chemical group 0.000 description 4
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
239000007864 aqueous solution Substances 0.000 description 3
238000004380 ashing Methods 0.000 description 3
230000008859 change Effects 0.000 description 3
150000001845 chromium compounds Chemical class 0.000 description 3
238000013461 design Methods 0.000 description 3
238000007689 inspection Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
238000012544 monitoring process Methods 0.000 description 3
150000004767 nitrides Chemical class 0.000 description 3
MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
229910021332 silicide Inorganic materials 0.000 description 3
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
230000009286 beneficial effect Effects 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
238000001312 dry etching Methods 0.000 description 2
238000005401 electroluminescence Methods 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
239000010955 niobium Substances 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
230000008569 process Effects 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
229910052715 tantalum Inorganic materials 0.000 description 2
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
239000010936 titanium Substances 0.000 description 2
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
238000003491 array Methods 0.000 description 1
XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000007789 gas Substances 0.000 description 1
150000001247 metal acetylides Chemical class 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
-1 molybdenum (Mo) Chemical compound 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
238000001579 optical reflectometry Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
239000010453 quartz Substances 0.000 description 1
239000002994 raw material Substances 0.000 description 1
238000011160 research Methods 0.000 description 1
VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Liquid Crystal (AREA)

TW109107827A 2019-03-28 2020-03-10 光罩、光罩之製造方法、及顯示裝置之製造方法 TWI821542B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2019-064772		2019-03-28
JP2019064772		2019-03-28

Publications (2)

Publication Number	Publication Date
TW202041967A TW202041967A (zh)	2020-11-16
TWI821542B true TWI821542B (zh)	2023-11-11

Family

ID=72673158

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW109107827A TWI821542B (zh)	2019-03-28	2020-03-10	光罩、光罩之製造方法、及顯示裝置之製造方法

Country Status (4)

Country	Link
JP (1)	JP7420586B2 (ja)
KR (1)	KR20200115214A (ja)
CN (1)	CN111752089B (ja)
TW (1)	TWI821542B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7393573B1 (ja)	2023-02-27	2023-12-06	株式会社エスケーエレクトロニクス	フォトマスクの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1371121A (zh) *	2001-02-16	2002-09-25	株式会社东芝	图形形成方法
CN1649086A (zh) *	2004-01-29	2005-08-03	株式会社东芝	结构检查、图形形成、工艺条件确定及半导体器件制造方法
CN101609269A (zh) *	2008-06-17	2009-12-23	东京毅力科创株式会社	显影处理方法和显影处理装置
CN103197515A (zh) *	2013-04-18	2013-07-10	合肥格林达电子材料有限公司	一种光蚀刻显影液的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100487537B1 (ko) *	2002-08-22	2005-05-03	삼성전자주식회사	포토마스크 제조방법
JP5345333B2 (ja) *	2008-03-31	2013-11-20	Ｈｏｙａ株式会社	フォトマスクブランク、フォトマスク及びその製造方法
JP2010169750A (ja) *	2009-01-20	2010-08-05	Hoya Corp	フォトマスクの製造方法、及び表示デバイスの製造方法
JP2010169749A (ja) *	2009-01-20	2010-08-05	Hoya Corp	フォトマスクの製造方法、表示デバイスの製造方法、及びフォトマスク基板処理装置
JP6189242B2 (ja) *	2014-03-28	2017-08-30	Hoya株式会社	フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
TWI604267B (zh) *	2014-12-17	2017-11-01	Ｈｏｙａ股份有限公司	光罩之製造方法及顯示裝置之製造方法
JP2017076146A (ja) *	2016-12-26	2017-04-20	Hoya株式会社	フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
KR20180101119A (ko) *	2017-03-04	2018-09-12	주식회사 에스앤에스텍	위상반전 블랭크 마스크 및 포토 마스크
JP6500076B2 (ja) *	2017-12-05	2019-04-10	Hoya株式会社	フォトマスクの製造方法及びフォトマスク基板

2020
- 2020-02-21 JP JP2020027837A patent/JP7420586B2/ja active Active
- 2020-03-10 TW TW109107827A patent/TWI821542B/zh active
- 2020-03-20 KR KR1020200034429A patent/KR20200115214A/ko active Search and Examination
- 2020-03-26 CN CN202010221760.0A patent/CN111752089B/zh active Active

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1371121A (zh) *	2001-02-16	2002-09-25	株式会社东芝	图形形成方法
CN1649086A (zh) *	2004-01-29	2005-08-03	株式会社东芝	结构检查、图形形成、工艺条件确定及半导体器件制造方法
CN101609269A (zh) *	2008-06-17	2009-12-23	东京毅力科创株式会社	显影处理方法和显影处理装置
CN103197515A (zh) *	2013-04-18	2013-07-10	合肥格林达电子材料有限公司	一种光蚀刻显影液的制备方法

Also Published As

Publication number	Publication date
JP7420586B2 (ja)	2024-01-23
CN111752089A (zh)	2020-10-09
KR20200115214A (ko)	2020-10-07
TW202041967A (zh)	2020-11-16
JP2020166240A (ja)	2020-10-08
CN111752089B (zh)	2024-07-02

Publication	Publication Date	Title
JP7276778B2 (ja)	2023-05-18	フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
TWI694302B (zh)	2020-05-21	光罩及顯示裝置之製造方法
KR20180048573A (ko)	2018-05-10	마스크 블랭크, 위상 시프트 마스크 및 그 제조 방법, 그리고 반도체 디바이스의 제조 방법
TWI690770B (zh)	2020-04-11	光罩及顯示裝置之製造方法
JP7059234B2 (ja)	2022-04-25	フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
TW201735161A (zh)	2017-10-01	相位偏移光罩基底、相位偏移光罩及顯示裝置之製造方法
US20180252995A1 (en)	2018-09-06	Mask blank, phase shift mask and method for manufacturing semiconductor device
JP2008090254A (ja)	2008-04-17	フォトマスク用基板及びフォトマスク並びにその製造方法
JP2009086381A (ja)	2009-04-23	グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
KR20170010032A (ko)	2017-01-25	포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 표시 장치의 제조 방법
TWI648593B (zh)	2019-01-21	光罩之製造方法、光罩、及顯示裝置之製造方法
TWI821542B (zh)	2023-11-11	光罩、光罩之製造方法、及顯示裝置之製造方法
JP2010169750A (ja)	2010-08-05	フォトマスクの製造方法、及び表示デバイスの製造方法
TWI604267B (zh)	2017-11-01	光罩之製造方法及顯示裝置之製造方法
TWI622849B (zh)	2018-05-01	光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法
TWI572977B (zh)	2017-03-01	光罩之製造方法、光罩及顯示裝置之製造方法
KR101898796B1 (ko)	2018-09-13	포토마스크의 제조 방법 및 포토마스크 기판
TW201937268A (zh)	2019-09-16	相偏移光罩基底、相偏移光罩之製造方法、及顯示裝置之製造方法
JP6500076B2 (ja)	2019-04-10	フォトマスクの製造方法及びフォトマスク基板
JP2015219290A5 (ja)	2016-06-02
JP6715360B2 (ja)	2020-07-01	フォトマスク基板
TW201823855A (zh)	2018-07-01	光罩之製造方法、光罩、及顯示裝置之製造方法
JP2022089903A (ja)	2022-06-16	フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法