TWI819160B - Equipment front-end module (EFEM) - Google Patents

Equipment front-end module (EFEM) Download PDF

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TWI819160B
TWI819160B TW108143857A TW108143857A TWI819160B TW I819160 B TWI819160 B TW I819160B TW 108143857 A TW108143857 A TW 108143857A TW 108143857 A TW108143857 A TW 108143857A TW I819160 B TWI819160 B TW I819160B
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port
door
foup
adjustment
wafer
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TW202034434A (en
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三浦辰弥
河合俊宏
鈴木淳志
村瀬剛
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日商昕芙旎雅股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

[課題]提供為了提高EFEM之導入現場中的作業員之安全性，而可以抑制供給氮的空間與大氣之間的隔離部分中的氧濃度之降低。 [解決手段]EFEM1設為，淨化噴嘴(9)係在與端口(40)接觸的第1調整部位、包含裝載端口(2)之底座(21)與裝載端口門(22)之境界部分或與FOUP門(43)之境界部分之至少一者之第2調整部位、搬送室(3)與裝載端口(2)之底座(21)之境界部分亦即第3調整部位、在搬送室(3)之外側用於收納裝載端口(2)之門驅動機構(27)之一部分且於內部空間形成有惰性氣體之下降氣流的驅動系統收納箱(28)之周圍亦即第4調整部位之彼等複數個調整部位之中的至少1個調整部位附近設置有噴出空氣的噴出口(x1)、(x2)、(x3)。[Problem] To improve the safety of workers at the EFEM introduction site, it is proposed to suppress the decrease in oxygen concentration in the isolation portion between the nitrogen supply space and the atmosphere. [Solution] EFEM1 is set so that the purge nozzle (9) is connected to the first adjustment part in contact with the port (40), the boundary part of the base (21) including the load port (2) and the load port door (22), or with The second adjustment position of at least one of the boundary parts of the FOUP door (43), the transfer chamber (3) and the boundary part of the base (21) of the loading port (2), that is, the third adjustment position, is in the transfer chamber (3) The outer side is used to store a part of the door driving mechanism (27) of the loading port (2) and forms a downward airflow of inert gas in the inner space around the driving system storage box (28), that is, the fourth adjustment position. Nozzle ports (x1), (x2), and (x3) for ejecting air are provided near at least one of the adjustment positions.

Description

設備前端模組（ＥＦＥＭ）Equipment front-end module (EFEM)

本發明關於晶圓之自動搬送所使用的設備前端模組(EFEM,Equipment Front End Module)。The present invention relates to an Equipment Front End Module (EFEM) used for automatic transportation of wafers.

半導體之製造工程中，為了良率或品質之提升，在潔淨室內進行晶圓之處理。近年來，採取僅針對晶圓之周圍之局部性空間進一步提升清淨度的「微環境(Mini-environment)方式」，採用晶圓之搬送等進行其他處理的手段。微環境方式中，係以筐體之內部構成大致閉鎖的晶圓搬送室(以下稱為「搬送室」)之壁面之一部分，而且，在高清淨的內部空間載置收納有晶圓的容器亦即FOUP(Front-Opening Unified Pod)，在與FOUP之門(以下稱為「FOUP門」)密接之狀態下具有對該FOUP門進行開關之功能的裝載端口(Load Port)係與搬送室鄰接設置。In the semiconductor manufacturing process, wafers are processed in clean rooms in order to improve yield or quality. In recent years, the "mini-environment method" has been adopted to further improve the cleanliness of only the local space around the wafer, and other processing methods such as transportation of the wafer have been adopted. In the micro-environment method, the interior of the casing forms part of the wall of a substantially closed wafer transfer chamber (hereinafter referred to as the "transfer chamber"), and a container containing wafers is placed in a high-clean internal space. That is, the FOUP (Front-Opening Unified Pod), and the load port (Load Port) that has the function of opening and closing the FOUP door in a state of close contact with the FOUP door (hereinafter referred to as the "FOUP door") is installed adjacent to the transfer room. .

裝載端口，係在與搬送室之間進行晶圓之出入之裝置，作為搬送室與FOUP之間的介面部之功能。將可以卡合於FOUP門而對FOUP門進行開關之裝載端口之門(以下稱為「裝載端口門」)予以開放時，藉由配置於搬送室內的搬送機器人(晶圓搬送裝置)，可以將FOUP內之晶圓取入搬送室內，或將晶圓從搬送室內收納於FOUP內而構成。The load port is a device for entering and exiting wafers from the transfer chamber, and functions as an interface between the transfer chamber and the FOUP. When the load port door (hereinafter referred to as the "load port door") that can engage with the FOUP door and open and close the FOUP door is opened, the transfer robot (wafer transfer device) installed in the transfer chamber can The wafers in the FOUP are taken into the transfer chamber, or the wafers are stored in the FOUP from the transfer chamber.

半導體之製造工程中，為了適當地維持晶圓周邊之氛圍，因此使用上述稱為FOUP的儲存容器，在FOUP之內部收納管理晶圓。特別是近年來隨著元件之高集成化或電路之微細化進展，要求在晶圓表面不產生微塵或水分之附著，而將晶圓周邊維持於高的潔淨度。於此，以不使晶圓表面因氧化等導致表面之性狀產生變化的方式，在FOUP之內部填充氮氣體，而將晶圓周邊設為惰性氣體亦即氮氛圍，設為真空狀態之處理(淨化處理)亦被進行。In the semiconductor manufacturing process, in order to properly maintain the atmosphere around the wafer, the above-mentioned storage container called FOUP is used to store and manage the wafer inside the FOUP. Especially in recent years, with the advancement of high integration of components or miniaturization of circuits, it is required to maintain high cleanliness around the wafer without causing dust or moisture to adhere to the surface of the wafer. Here, in order not to change the surface properties of the wafer surface due to oxidation, etc., the inside of the FOUP is filled with nitrogen gas, and the periphery of the wafer is made into an inert gas, that is, nitrogen atmosphere, and is placed in a vacuum state ( Purification treatment) is also carried out.

又，以惰性氣體亦即氮填滿搬送室內的方式而構成的EFEM亦被提案而實用化(例如專利文獻1)。具體言之為，該EFEM具備：包含在搬送室之內部使氮循環的搬送室之循環流路；對循環流路供給氮的氣體供給手段；及從循環流路排出氮的氣體排出手段。氮係對應於循環流路內之氧濃度等之變動而適當地供給及排出。藉此，和常時供給及排出氮的構成比較可以抑制氮之供給量之增大，而且可以將搬送室內保持於氮氛圍。 [先前技術文獻] [專利文獻]Furthermore, an EFEM composed of a transfer chamber filled with inert gas, that is, nitrogen, has also been proposed and put into practical use (for example, Patent Document 1). Specifically, this EFEM is provided with: a circulation channel including a transfer chamber that circulates nitrogen within the transfer chamber; a gas supply means for supplying nitrogen to the circulation channel; and a gas discharge means for discharging nitrogen from the circulation channel. Nitrogen is appropriately supplied and discharged in response to changes in oxygen concentration and the like in the circulation flow path. This makes it possible to suppress an increase in the supply amount of nitrogen and maintain a nitrogen atmosphere in the transfer chamber compared with a configuration in which nitrogen is constantly supplied and discharged. [Prior technical literature] [Patent Document]

[專利文獻1]特開2017-212322號公報[Patent Document 1] Japanese Patent Application Publication No. 2017-212322

[發明所欲解決之課題][Problem to be solved by the invention]

但是，將供給氮的空間與大氣空間進行隔離的部分附近(例如隔離部分起1mm之範圍)中的氧濃度，就作業員而言需要維持於安全的濃度(例如19.5%(百分比)以上)。此乃為了回避作業員進入氧濃度極端低的空間時陷入缺氧狀態而有昏厥之虞。However, the oxygen concentration in the vicinity of the portion that isolates the nitrogen supply space from the atmospheric space (for example, within 1 mm from the isolated portion) needs to be maintained at a safe concentration (for example, 19.5% or more) for the operator. This is to avoid the risk of workers falling into a hypoxic state and fainting when entering a space with extremely low oxygen concentration.

本發明係著眼虞這樣的課題而完成者，主要目的在於提供EFEM，該EFEM為了提高EFEM之導入現場中的作業員之安全性，而可以抑制供給氮等之惰性氣體的的空間與大氣之間的隔離部分中的氧濃度之降低。又，本發明係即使FOUP以外之晶圓收納容器亦可以對應的技術。 [解決課題之手段]The present invention was made in view of such a problem, and its main purpose is to provide an EFEM that can suppress the supply of inert gas such as nitrogen between the space and the atmosphere in order to improve the safety of workers at the EFEM introduction site. The oxygen concentration in the isolated part is reduced. In addition, the present invention is a technology that can cope with wafer storage containers other than FOUP. [Means to solve the problem]

亦即，本發明之EFEM，其特徵為，具備：搬送室，其藉由在設置於壁面的開口連接有裝載端口及處理裝置而在內部構成大致閉鎖的晶圓搬送空間；及晶圓搬送裝置，其配設於晶圓搬送空間，且在載置於裝載端口的晶圓收納容器與處理裝置之間進行晶圓之搬送；該EFEM構成為，在晶圓搬送空間生成下降氣流之同時使氮等之惰性氣體循環於晶圓搬送空間。本發明的EFEM中，作為裝載端口可以適用具備以下者：底座，其構成搬送室之前壁面之一部分，而且呈形成有向搬送室之內部空間開放的開口部之板狀；對底座之開口部進行開關的裝載端口門；以大致水平姿勢設置於底座的載置台；底部淨化裝置，其使設置於載置台的噴嘴接觸於載置台所載置的晶圓收納容器之底面上配置的端口(port)之狀態下從晶圓收納容器之底面側可以將該晶圓收納容器內之氣體氛圍替換為由氮等之惰性氣體形成的淨化用氣體；及對裝載端口門進行驅動的門驅動機構；噴嘴係在複數個調整部位之中的至少1個調整部位附近設置有噴出空氣的噴出口或氣體吸引口，彼等複數個調整部位為，接觸端口的第1調整部位，包含底座之中的與裝載端口門之境界部分或與晶圓收納容器之門亦即容器門之境界部分之至少一者的第2調整部位，搬送室與底座之境界部分亦即第3調整部位，在搬送室之外側用於收納裝載端口之中的門驅動機構之一部分且於內部空間形成有惰性氣體之下降氣流的驅動系統收納箱之周圍亦即第4調整部位。That is, the EFEM of the present invention is characterized by having: a transfer chamber in which a loading port and a processing device are connected to an opening provided in the wall surface to form a substantially closed wafer transfer space; and a wafer transfer device. , which is disposed in the wafer transfer space, and transfers wafers between the wafer storage container placed in the loading port and the processing device; the EFEM is configured to generate a downward airflow in the wafer transfer space and simultaneously generate nitrogen. The inert gas circulates in the wafer transfer space. In the EFEM of the present invention, the following can be used as the loading port: a base that forms part of the front wall of the transfer chamber and has a plate shape with an opening opening to the inner space of the transfer chamber; and the opening of the base is A loading port door that opens and closes; a mounting table installed on the base in a substantially horizontal position; and a bottom purification device that brings a nozzle provided on the mounting table into contact with a port disposed on the bottom of a wafer container placed on the mounting table In this state, the gas atmosphere in the wafer storage container can be replaced with a purification gas composed of an inert gas such as nitrogen from the bottom side of the wafer storage container; and a door driving mechanism that drives the load port door; the nozzle system An ejection port or a gas suction port for ejecting air is provided near at least one of the plurality of adjustment parts. The plurality of adjustment parts are the first adjustment part that contacts the port, including the base and the loading port. The second adjustment position is at least one of the boundary part of the door or the door of the wafer storage container, that is, the container door, and the third adjustment position, the boundary part of the transfer chamber and the base, is used outside the transfer chamber. The fourth adjustment position is located around the drive system storage box that stores a part of the door drive mechanism in the loading port and forms a downflow of inert gas in the internal space.

本發明人，關於EFEM之導入現場中對作業員引起危險的氧濃度之降低狀態之主要原因，係著眼於源自設置於晶圓收納容器之底面的端口與設置於裝載端口的底部淨化用噴嘴之間的底部淨化處理所使用的氮等之惰性氣體雖然微小但亦有洩漏，或源自晶圓收納容器本體與晶圓收納容器之門之間的晶圓收納容器內之氮等之惰性氣體雖然微小但亦有洩漏，或者是在以氮等之惰性氣體填滿搬送室內而構成的EFEM中，源自搬送室與裝載端口之間、或收納驅動裝載端口門的機構之驅動系統收納箱、或裝載端口門的搬送室內之惰性氣體雖然微小但亦有洩漏，針對彼等之洩漏部分附近中的氧濃度的局部性降低之事態進行防止･抑制，而研究出並完成本發明的EFEM。The inventors of the present invention have focused on the main cause of the reduced oxygen concentration that is dangerous for operators at the EFEM introduction site, originating from the port provided on the bottom surface of the wafer storage container and the bottom purification nozzle provided in the loading port. Inert gases such as nitrogen used in the bottom purification process may leak slightly but may leak, or inert gases such as nitrogen originating from the wafer container between the wafer container body and the wafer container door. Although it is small, there is still a leak. In the EFEM, which is constructed by filling the transfer chamber with inert gas such as nitrogen, it may come from between the transfer chamber and the load port, or from the drive system storage box that houses the mechanism that drives the load port door. The EFEM of the present invention was developed and completed in order to prevent and suppress the local decrease in oxygen concentration in the vicinity of the leakage portion, even though there is a small leakage of inert gas in the transfer chamber of the loading port door.

依據本發明的EFEM，針對將供給氮等之惰性氣體的空間與大氣進行隔離的部分(隔離部分)，係從噴出口進行空氣之供給，或藉由氣體吸引口對該隔離部分之氣體(高濃度之惰性氣體)進行吸引，藉此可以抑制隔離部分附近中的氧濃度之降低，可以提高作業員之安全性。According to the EFEM of the present invention, air is supplied from an ejection port to a portion (isolation portion) that isolates a space for supplying inert gas such as nitrogen from the atmosphere, or the gas in the isolation portion (high temperature) is supplied through a gas suction port. By absorbing an inert gas with a certain concentration, the decrease in oxygen concentration in the vicinity of the isolated part can be suppressed, thereby improving the safety of the operator.

特別是，本發明的EFEM具備調整手段，藉由該調整手段，針對惰性氣體對晶圓搬送空間之供給量、基於底部淨化裝置的淨化用氣體之供給量、或各調整部位中的惰性氣體朝向大氣壓側之洩漏量，依據彼等之任一之量，可以調整從噴出口噴出的空氣之量或基於氣體吸引口的吸引力，因此藉由適度的空氣供給量或吸引力可以抑制隔離部分附近中的氧濃度之降低。 [發明效果]In particular, the EFEM of the present invention is equipped with an adjustment means by which the supply amount of the inert gas to the wafer transfer space, the supply amount of the purification gas by the bottom purification device, or the direction of the inert gas in each adjustment part is adjusted. The amount of leakage on the atmospheric pressure side can be adjusted based on either the amount of air ejected from the ejection port or the suction force of the gas suction port. Therefore, the area around the isolated part can be suppressed by an appropriate air supply amount or suction force. The decrease in oxygen concentration in the [Effects of the invention]

依據本發明，可以提供在對晶圓實施適當之處理的EFEM之導入現場中，能夠抑制供給氮等之惰性氣體的空間與大氣之隔離部分中的氧濃度之降低，可以提高作業員之安全性的EFEM。According to the present invention, at an EFEM introduction site that performs appropriate processing on wafers, it is possible to suppress the decrease in oxygen concentration in a portion isolated from the atmosphere by supplying an inert gas such as nitrogen, thereby improving operator safety. EFEM.

以下，參照圖面說明本發明之一實施形態。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

本實施形態的EFEM(Equipment Front End Module)1，係如圖1所示，在半導體之製造工程中，具備配置於潔淨室的裝載端口2及搬送室3者。於圖1係示意表示EFEM1與其周邊裝置之相對位置關係。該圖所示FOUP4係與EFEM1同時被使用者。The EFEM (Equipment Front End Module) 1 of this embodiment is equipped with a load port 2 and a transfer chamber 3 arranged in a clean room in the semiconductor manufacturing process as shown in FIG. 1 . Figure 1 schematically shows the relative positional relationship between EFEM1 and its peripheral devices. The figure shows that FOUP4 is used simultaneously with EFEM1.

在搬送室3之內部空間亦即晶圓搬送空間3S設置有可以在FOUP4與處理裝置M之間搬送晶圓W的搬送機器人31。藉由驅動設置於搬送室3內的風扇過濾單元32，在搬送室3之晶圓搬送空間3S產生下降氣流，使高清淨度的氣體亦即氮等之惰性氣體(環境氣體)可以在晶圓搬送空間3S循環。在搬送室3之中與配置有裝載端口2的前壁面3A對置的後壁面3B鄰接設置有處理裝置M(半導體處理裝置)。亦即，在設置於搬送室3之前壁面3A的開口連接有裝載端口2，而且在設置於後壁面3B的開口連接有處理裝置M，藉此而在搬送室3之內部形成大致閉鎖的晶圓搬送空間3S。A transfer robot 31 capable of transferring the wafer W between the FOUP 4 and the processing apparatus M is provided in the wafer transfer space 3S, which is an internal space of the transfer chamber 3 . By driving the fan filter unit 32 installed in the transfer chamber 3, a downward airflow is generated in the wafer transfer space 3S of the transfer chamber 3, so that high-purity gas, that is, inert gas (ambient gas) such as nitrogen, can pass through the wafer. 3S circulation of transportation space. In the transfer chamber 3 , a processing device M (semiconductor processing device) is provided adjacent to the rear wall surface 3B facing the front wall surface 3A on which the load port 2 is arranged. That is, the loading port 2 is connected to the opening on the front wall 3A of the transfer chamber 3 , and the processing device M is connected to the opening on the rear wall 3B, thereby forming a substantially closed wafer inside the transfer chamber 3 Transport space 3S.

潔淨室中，處理裝置M之內部空間MS、搬送室3之晶圓搬送空間3S及裝載端口2上所載置的FOUP4之內部空間4S係維持於高清淨度。In the clean room, the internal space MS of the processing device M, the wafer transfer space 3S of the transfer chamber 3, and the internal space 4S of the FOUP 4 placed on the load port 2 are maintained at high purity.

本實施形態中，如圖1所示，在EFEM1之前後方向D依序使裝載端口2、搬送室3、處理裝置M相互密接配置。又，EFEM1之動作係藉由裝載端口2之控制器(圖3所示控制部2C)或EFEM1整體之控制器(圖1所示控制部3C)控制，處理裝置M之動作係藉由處理裝置M之控制器(圖1所示控制部MC)進行控制。於此，處理裝置M整體之控制器亦即控制部MC或EFEM1整體之控制器亦即控制部3C係裝載端口2之控制部2C之上位控制器。彼等各控制部2C、3C、MC，係由具備CPU、記憶體及介面的通常之微處理器等構成，於記憶體事先儲存有處理所必要的程式，CPU依序取出並執行必要的程式，和周邊硬體資源共同動作而實現期待之功能。In the present embodiment, as shown in FIG. 1 , the loading port 2 , the transfer chamber 3 , and the processing device M are arranged in close contact with each other in order in the front and rear direction D of the EFEM 1 . In addition, the operation of EFEM1 is controlled by the controller of the load port 2 (control unit 2C shown in FIG. 3) or the controller of the entire EFEM1 (control unit 3C shown in FIG. 1), and the operation of the processing device M is controlled by the processing device. M's controller (control unit MC shown in Figure 1) performs control. Here, the control unit MC, which is the entire controller of the processing device M, or the control unit 3C, which is the entire controller of the EFEM 1 , is an upper-level controller of the control unit 2C of the load port 2 . Each of the control units 2C, 3C, and MC is composed of a common microprocessor equipped with a CPU, a memory, and an interface. Programs necessary for processing are stored in the memory in advance, and the CPU sequentially retrieves and executes the necessary programs. , and work together with peripheral hardware resources to achieve the desired function.

FOUP4，如圖1及圖2所示，係具備通過開口部亦即搬出入口41而可以對內部空間4S開放的FOUP本體42，及可以對搬出入口41進行開關的FOUP門43，在內部沿著上下方向H以多段狀收納複數片晶圓W，經由搬出入口41可以使彼等晶圓W出入而構成的既知者。As shown in FIGS. 1 and 2 , the FOUP 4 is provided with a FOUP body 42 that can be opened to the internal space 4S through a carry-out entrance 41 , which is an opening, and a FOUP door 43 that can open and close the carry-out entrance 41 . It is known that a plurality of wafers W are stored in a plurality of stages in the vertical direction H, and the wafers W can be moved in and out through the unloading entrance 41 .

FOUP本體42係具備在內部空間4S可以按照複數段規定間距將晶圓W進行載置的架部(晶圓載置架)者。在FOUP本體42之底壁，係如圖2等所示，在規定部位設置有端口40。端口40，例如主體係由可以嵌入形成於FOUP本體42之底壁的端口安裝用貫穿孔的中空筒狀之扣眼密封(Grommet seal)形成，構成為藉由逆止閥可以開關者。在FOUP本體42之上壁中的朝上面之中央部設置有，被容器搬送裝置(例如OHT：Over Head Transport)等把持的凸緣部。The FOUP body 42 is provided with a rack (wafer mounting rack) capable of mounting the wafer W at a plurality of predetermined pitches in the internal space 4S. The bottom wall of the FOUP body 42 is provided with ports 40 at predetermined locations as shown in FIG. 2 and others. For example, the main system of the port 40 is formed by a hollow cylindrical grommet seal that can be inserted into a through-hole for port installation formed in the bottom wall of the FOUP body 42, and is configured to be opened and closed by a check valve. A flange portion held by a container transport device (for example, OHT: Over Head Transport) or the like is provided at the upper center portion of the upper wall of the FOUP body 42 .

FOUP門43為，在被載置於裝載端口2之後述之載置台23的狀態下與裝載端口2之裝載端口門22呈對置者，形成為概略板狀。於FOUP門43設置有可以將該FOUP門43鎖定於FOUP本體42的鎖鍵(省略圖示)。FOUP門43之中藉由FOUP門43將搬出入口41閉鎖之狀態下在與FOUP本體42接觸或接近之規定之部分設置有墊片(省略圖示)，藉由使墊片與FOUP本體42接觸而彈性變形，可以將FOUP4之內部空間4S密閉而構成。The FOUP door 43 faces the load port door 22 of the load port 2 in a state of being placed on the mounting table 23 described later on the load port 2, and is formed in a rough plate shape. The FOUP door 43 is provided with a lock key (not shown) that can lock the FOUP door 43 to the FOUP body 42 . In the FOUP door 43, a gasket (not shown) is provided at a predetermined portion that is in contact with or close to the FOUP body 42 in a state where the carry-out entrance 41 is locked by the FOUP door 43. The gasket is brought into contact with the FOUP body 42. The elastic deformation can seal the internal space 4S of FOUP4.

本實施形態的裝載端口2，係如圖2至圖5等所示，具備：構成搬送室3之前壁面3A之一部分，而且形成有開放搬送室3之晶圓搬送空間3S之開口部21a的呈板狀之底座21；對底座21之開口部21a進行開關的裝載端口門22；及在底座21以大致水平姿勢設置的載置台23。The load port 2 of this embodiment, as shown in FIGS. 2 to 5 , etc., has an opening 21 a forming a part of the front wall 3A of the transfer chamber 3 and forming the wafer transfer space 3S of the transfer chamber 3 . A plate-shaped base 21; a loading port door 22 that opens and closes the opening 21a of the base 21; and a mounting base 23 installed in a substantially horizontal position on the base 21.

於底座21之下端設置有具有腳輪及設置腳的腳部24，在與FOUP門43對置的位置設置有窗單元214(參照圖6)。設置於該窗單元214的開口部215，係容許晶圓W之通過的開口部。本實施形態中，如該圖所示，係採用具有圍繞底座21之開口部21a的密封部5的裝載端口2，如圖2所示，在沿著厚度方向夾持底座21之位置設置有密封部5、6。A foot portion 24 having casters and set legs is provided at the lower end of the base 21, and a window unit 214 is provided at a position facing the FOUP door 43 (see Fig. 6). The opening 215 provided in the window unit 214 is an opening that allows the wafer W to pass. In this embodiment, as shown in this figure, a loading port 2 having a sealing portion 5 surrounding the opening 21a of the base 21 is used. As shown in Fig. 2 , a seal is provided at a position where the base 21 is held along the thickness direction. Parts 5 and 6.

載置台23，係設置於在底座21之中比起高度方向中央稍微靠上方之位置以大致水平姿勢配置的水平基台25(支撐台)之上部。該載置台23為在使能夠進行FOUP本體42之內部空間4S之開關的FOUP門43與裝載端口門22呈對置的方向之狀態下可以載置FOUP4者。又，載置台23係構成為相對於底座21，在FOUP門43接近底座21之開口部21a的規定之對接位置(參照圖7)，與在FOUP門43比起對接位置更遠離底座21規定距離的位置(參照圖2)之間可以進退移動。載置台23，係如圖3所示，具有朝上突出的複數個突起(銷)231，藉由使彼等突起231與形成於FOUP4之底面的孔(省略圖示)卡合，來達成載置台23上的FOUP4之定位。又，設置有使FOUP4相對於載置台23進行固定之鎖定爪232。藉由使該鎖定爪232掛鉤在設置於FOUP4之底面的被鎖定部(省略圖示)而設為固定之鎖定狀態，藉此，與定位用之突起231共同動作而可以將FOUP4一邊引導至載置台23上的適當的位置一邊進行固定。又，藉由解除鎖定爪232對FOUP4之底面上所設置的被鎖定部之鎖定狀態可以將FOUP4設為可以從載置台23分離之狀態。The mounting base 23 is provided on an upper portion of a horizontal base 25 (support base) arranged in a substantially horizontal attitude at a position slightly above the center in the height direction of the base 21 . This mounting base 23 is capable of placing the FOUP 4 in a state where the FOUP door 43 and the loading port door 22, which can open and close the internal space 4S of the FOUP body 42, are facing each other. Furthermore, the mounting table 23 is configured such that the FOUP door 43 is at a predetermined docking position (refer to FIG. 7 ) close to the opening 21 a of the base 21 with respect to the base 21 , and the FOUP door 43 is further away from the base 21 by a predetermined distance than the docking position. It can move forward and backward between the positions (see Figure 2). The mounting platform 23, as shown in FIG. 3, has a plurality of protrusions (pins) 231 protruding upward. By engaging these protrusions 231 with holes (not shown) formed in the bottom surface of the FOUP 4, the mounting platform 23 is mounted. Positioning of FOUP4 on stage 23. Furthermore, a lock claw 232 is provided for fixing the FOUP 4 to the mounting base 23 . By hooking the locking pawl 232 on a locked portion (not shown) provided on the bottom surface of the FOUP 4 and setting it in a fixed locking state, it cooperates with the positioning protrusion 231 to guide one side of the FOUP 4 to the carrier. Fix it while placing it in an appropriate position on the platform 23. In addition, by releasing the locked state of the locked portion provided on the bottom surface of the FOUP 4 by the locking pawl 232, the FOUP 4 can be brought into a state in which it can be separated from the mounting base 23.

裝載端口門22具備連結機構221，藉由該連結機構221可以在連結FOUP門43而使FOUP門43從FOUP本體42可以拆除的蓋連結狀態，與解除對FOUP門43的連結狀態，而且將FOUP門43安裝於FOUP本體42的蓋連結解除狀態之間進行切換(參照圖5)，係藉由連結機構221在將FOUP門43設為一體化之狀態下予以保持而沿著規定之移動路徑可以移動者。本實施形態之裝載端口2構成為使裝載端口門22至少在以下的全閉位置(C)與開放位置(O)之間可以移動，該全閉位置(C)為如圖7所示位置，亦即藉由該裝載端口門22所保持的FOUP門43而將FOUP本體42之內部空間4S予以密閉的位置，該開放位置(O)為如圖8所示位置，亦即使該裝載端口門22所保持的FOUP門43從FOUP本體42分離而將該FOUP本體42之內部空間4S向搬送室3內開放的位置。本實施形態之裝載端口2，係在維持定位於全閉位置(C)的裝載端口門22之起立姿勢的狀態下可以移動至圖8所示開放位置(O)，另外，構成為在維持起立姿勢的狀態下可以從圖8所示開放位置(O)至未圖示的全開位置為止沿著下方向移動。這樣的裝載端口門22之移動，係藉由設置於裝載端口2的門驅動機構27來實現。 The loading port door 22 is provided with a linking mechanism 221, which allows the FOUP door 43 to be connected to the cover in a state where the FOUP door 43 can be detached from the FOUP body 42, and to a state in which the FOUP door 43 is unlinked and the FOUP door 43 is detachable. The door 43 is switched between the disconnected state of the cover attached to the FOUP body 42 (see FIG. 5 ), and the FOUP door 43 is held in an integrated state by the connection mechanism 221 and moves along a predetermined path. Mover. The load port 2 of this embodiment is configured so that the load port door 22 can move at least between the following fully closed position (C) and the open position (O). The fully closed position (C) is the position shown in FIG. 7, That is, the internal space 4S of the FOUP body 42 is sealed by the FOUP door 43 held by the load port door 22. The open position (O) is the position shown in FIG. 8, that is, the load port door 22 The held FOUP door 43 is separated from the FOUP body 42 and opens the internal space 4S of the FOUP body 42 into the transfer chamber 3 . The load port 2 of this embodiment is movable to the open position (O) shown in FIG. 8 while maintaining the upright posture of the load port door 22 positioned at the fully closed position (C), and is configured to maintain the upright position. In the posture state, it can move in the downward direction from the open position (O) shown in FIG. 8 to the fully open position (not shown). Such movement of the load port door 22 is realized by the door driving mechanism 27 provided in the load port 2 .

門驅動機構27，係如圖2等所示，具備：對裝載端口門22進行支撐的支撐框架271；透過滑動支撐部272將支撐框架271支撐成為可於前後方向D移動的可動方塊273；將可動方塊273支撐成為可於上下方向H移動的滑軌274；及進行沿著裝載端口門22之水平路徑的前後方向D之移動以及沿著鉛直路徑的上下方向H之移動之驅動源(例如未圖示的致動器)。藉由從控制部2C對該致動器供給驅動指令，而使裝載端口門22沿著前後方向D及上下方向移動者。又，亦可以是分別具備前後移動用之致動器及上下移動用之致動器的態樣，或是以共通之致動器作為驅動源而進行前後移動及上下移動之態樣。 The door driving mechanism 27, as shown in FIG. 2 and others, includes: a support frame 271 that supports the loading port door 22; a movable block 273 that supports the support frame 271 through a sliding support portion 272 so as to be movable in the front-rear direction D; The movable block 273 supports a slide rail 274 that can move in the up and down direction H; and a driving source (for example, not shown) that moves in the front and rear direction D along the horizontal path of the loading port door 22 and moves in the up and down direction H along the vertical path. actuator shown). By supplying a drive command to the actuator from the control unit 2C, the load port door 22 is moved in the front-rear direction D and the up-down direction. Alternatively, the actuator may be provided with an actuator for forward and backward movement and the actuator for up and down movement, or a common actuator may be used as a driving source to perform forward and backward movement and up and down movement.

支撐框架271係對裝載端口門22之後部下方進行支撐者。該支撐框架271，朝下方延伸之後，通過形成於底座21的狹縫狀之插通孔21b而成為向搬送室3之外側(載置台23側)突出的大致曲柄上之形狀。對該支撐框架271進行支撐之滑動支撐部272、可動方塊273、滑軌274亦相比底座21更靠近載置台23側，亦即靠近搬送室3之外側配置。彼等滑動支撐部272、可動方塊273、滑軌274成為裝載端口門22移動時之滑動部位。本實施形態中，藉由將彼等配置於搬送室3之外側，在裝載端口門22之移動時即使萬一產生微塵之情況下，藉由將插通孔21b設定成為微小的狹縫狀，可以防止、抑制微塵進入搬送室3內的事 態。又，本實施形態之裝載端口2，係具備將門驅動機構27之中配置於搬送室3之外側的構件或部分，具體言之為支撐框架271之一部分、滑動支撐部272、可動方塊273及滑軌274進行被覆的驅動系統收納箱28。藉此，設定成為搬送室3內之惰性氣體(環境氣體)不會通過形成於底座21的上述插通孔21b流出EFEM1之外部。又，於驅動系統收納箱28之內部空間形成有惰性氣體之下降氣流。 The support frame 271 supports the lower rear portion of the load port door 22 . After extending downward, the support frame 271 passes through the slit-shaped insertion hole 21b formed in the base 21 and takes a substantially crank shape protruding toward the outside of the transfer chamber 3 (toward the mounting table 23 side). The sliding support part 272, the movable block 273, and the slide rail 274 that support the support frame 271 are also arranged closer to the mounting table 23 side than the base 21, that is, closer to the outside of the transfer chamber 3. The sliding support part 272, the movable block 273, and the slide rail 274 become the sliding parts when the loading port door 22 moves. In this embodiment, by arranging them outside the transfer chamber 3, even if fine dust is generated when the loading port door 22 is moved, the insertion hole 21b is set in a minute slit shape. It is possible to prevent and suppress the entry of fine dust into the transfer chamber 3 state. In addition, the loading port 2 of this embodiment is provided with members or parts of the door driving mechanism 27 arranged outside the transfer chamber 3, specifically a part of the support frame 271, the sliding support part 272, the movable block 273 and the sliding block 272. The drive system storage box 28 is covered with rails 274 . Thereby, it is set so that the inert gas (ambient gas) in the transfer chamber 3 will not flow out of the EFEM1 through the insertion hole 21b formed in the base 21. Furthermore, a downward airflow of inert gas is formed in the internal space of the drive system storage box 28 .

又，本實施形態之裝載端口2，係具備限制定位於對接位置的載置台23上之FOUP4朝與底座21分離的方向移動之的移動限制部L。本實施形態中，係將移動限制部L作為窗單元214而予以單元化(參照圖6)。 Furthermore, the load port 2 of this embodiment is provided with a movement restriction part L that restricts the movement of the FOUP 4 positioned on the mounting base 23 at the docking position in the direction away from the base 21 . In this embodiment, the movement restriction part L is unitized as a window unit 214 (see FIG. 6 ).

本實施形態之裝載端口2，係具備對FOUP4之內部空間4S注入由氮等之惰性氣體形成的淨化用氣體，可以將FOUP4之內部空間4S之氣體氛圍替換為淨化用氣體的淨化裝置P(參照圖3)。淨化裝置P為具備在上端部可以從載置台23上露出之狀態下配置於規定部位的複數個淨化噴嘴9(氣體供給排出裝置)者。彼等複數個淨化噴嘴9，係對應於FOUP4之底面上所設置的端口40之位置而安裝於載置台23上之適當地位置，在與端口40接觸之狀態下可以連接者。使用這樣的淨化裝置P的底部淨化處理，係使設置於FOUP4之底部的複數個端口40之中的規定數(除了全部以外)之端口發揮作為「供給端口」之功能，藉由與供給端口連接的淨化噴嘴9對該FOUP4內注入氮氣體或惰性氣體或乾空氣等之適當選擇的淨化用氣體，同時使殘餘之端口40發揮作為「排氣端口」之功能，而通過與排氣端口連接的淨化噴嘴9排出FOUP4內之氣體氛圍，藉此，進行使FOUP4內填滿淨化用氣體之處理。裝載端口2具備在底部淨化處理時對作為排氣端口功能之端口40所連接的淨化噴嘴9之氣體壓(排氣壓)進行檢測的壓力感測器(省略圖示)。The loading port 2 of this embodiment is equipped with a purification device P that injects a purification gas made of an inert gas such as nitrogen into the internal space 4S of the FOUP 4 and can replace the gas atmosphere in the internal space 4S of the FOUP 4 with the purification gas (see Figure 3). The purification device P is provided with a plurality of purification nozzles 9 (gas supply and discharge devices) arranged at a predetermined position in a state where the upper end can be exposed from the mounting table 23 . The plurality of purification nozzles 9 are installed at appropriate positions on the mounting table 23 corresponding to the position of the port 40 provided on the bottom surface of the FOUP 4, and can be connected while in contact with the port 40. The bottom purification process using such a purification device P causes a predetermined number (except all) of the plurality of ports 40 provided at the bottom of the FOUP 4 to function as "supply ports" by connecting to the supply ports. The purge nozzle 9 injects an appropriately selected purification gas such as nitrogen gas, inert gas, or dry air into the FOUP 4, and at the same time, the remaining port 40 functions as an "exhaust port", and the remaining port 40 is connected to the exhaust port through the exhaust port. The purge nozzle 9 discharges the gas atmosphere in the FOUP 4, thereby filling the FOUP 4 with purification gas. The loading port 2 is equipped with a pressure sensor (not shown) for detecting the gas pressure (exhaust pressure) of the purge nozzle 9 connected to the port 40 functioning as an exhaust port during the bottom purification process.

本實施形態之裝載端口2，係如圖9所示，具備可以檢測FOUP4內的晶圓W之有無或收納姿勢之映射部(mapping)m。映射部m具有可以檢測FOUP4內在高度方向H以多段狀收納的晶圓W之有無的映射感測器(傳送器m1、受信器m2)，及支撐映射感測器m1、m2的感測器框架m3。映射部m可以是其整體配置於搬送室3內之搬送空間的映射退避姿勢，與至少映射感測器m1、m2通過底座21之開口21a被定位於FOUP4內的映射姿勢之間之姿勢。映射部m構成為在維持映射退避姿勢或映射姿勢的狀態下可以沿著高度方向H移動。如圖9所示，藉由將感測器框架m3之一部分安裝於門驅動機構27之一部分，而構成為映射部m之升降移動與裝載端口門22之升降移動一體進行。又，圖9以外之各圖中省略映射部m。The load port 2 of this embodiment is equipped with a mapping part (mapping) m that can detect the presence or storage posture of the wafer W in the FOUP 4 as shown in FIG. 9 . The mapping unit m has mapping sensors (transmitter m1 and receiver m2) that can detect the presence or absence of wafers W housed in multiple segments in the height direction H in the FOUP 4, and a sensor frame that supports the mapping sensors m1 and m2. m3. The mapping unit m may be in a posture between a mapping retraction posture in which the entirety of the mapping unit m is disposed in the transport space within the transport chamber 3 and a mapping posture in which at least the mapping sensors m1 and m2 are positioned in the FOUP 4 through the opening 21 a of the base 21 . The mapping unit m is configured to be movable in the height direction H while maintaining the mapping retraction posture or the mapping posture. As shown in FIG. 9 , by attaching a part of the sensor frame m3 to a part of the door driving mechanism 27 , the lifting movement of the mapping part m and the lifting movement of the load port door 22 are performed integrally. In addition, the mapping part m is omitted in each figure except FIG. 9 .

映射感測器係由發出信號亦即光束(光線)的傳送器m1(發光感測器)，及接收從傳送器m1發出的信號的接收器m2(受光感測器)構成。又，映射感測器亦可以由傳送器，及使傳送器發出的光線朝向傳送器反射的反射部構成。該情況下，傳送機亦具有接收器之功能。The mapping sensor is composed of a transmitter m1 (light-emitting sensor) that emits a signal, that is, a light beam (light), and a receiver m2 (light-receiving sensor) that receives the signal emitted from the transmitter m1. In addition, the mapping sensor may be composed of a transmitter and a reflection part that reflects light emitted by the transmitter toward the transmitter. In this case, the transmitter also functions as a receiver.

接著，對EFEM1之動作流程進行說明。Next, the operation flow of EFEM1 will be explained.

首先，藉由OHT等之容器搬送裝置將FOUP4搬送至裝載端口2之上方，載置於載置台23上。此時，例如設置於載置台23的定位用突起231嵌入FOUP4之定位用凹部，將載置台23上之鎖定爪232設為鎖定狀態(鎖定處理)。本實施形態中，可以在搬送室3之寬度方向並列配置3台的裝載端口2之載置台23上分別載置FOUP4。又，亦可以構成為藉由對FOUP4是否載置於載置台23上之規定位置進行檢測的座位感測器(省略圖示)檢測出FOUP4被載置於載置台23上之正規位置。First, the FOUP 4 is transported above the loading port 2 by a container transport device such as an OHT, and placed on the mounting table 23 . At this time, for example, the positioning protrusion 231 provided on the mounting base 23 is fitted into the positioning recess of the FOUP 4, and the locking pawl 232 on the mounting base 23 is set to the locked state (locking process). In this embodiment, three FOUPs 4 can be placed on the mounting bases 23 of the load ports 2 arranged in parallel in the width direction of the transfer chamber 3 . Alternatively, the seat sensor (not shown) that detects whether the FOUP 4 is placed at a predetermined position on the placement base 23 may be configured to detect that the FOUP 4 is placed in a regular position on the placement base 23 .

本實施形態之裝載端口2，係在FOUP4載置於載置台23上之正規位置之時點，檢測出載置台23上所設置的例如加壓感測器之被押壓部經由FOUP4之中的底面部押壓。以此作為契機，而使設置於載置台23的淨化噴嘴9(全部淨化噴嘴9)相比載置台23之上表面更朝上方進出而連結於FOUP4之各端口40，各端口40從閉鎖狀態切換為開放狀態。接著，本實施形態之裝載端口2，係藉由淨化裝置P對淨化FOUP4之內部空間4S供給氮氣體，進行將FOUP4之內部空間4S替換為氮氣體之處理(底部淨化處理)。在底部淨化處理時，FOUP4內之氣體氛圍係從作為排氣端口而發揮功能的端口40所連接的淨化噴嘴9排出FOUP4外。藉由這樣的底部淨化處理，使FOUP4內之水分濃度及氧濃度分別降低至規定值以下而將FOUP4內的晶圓W之周圍環境設為低濕度環境及低氧環境。The loading port 2 of this embodiment detects when the FOUP 4 is placed in a regular position on the mounting table 23, such as a pressure sensor provided on the mounting table 23, and the pressed part passes through the bottom surface of the FOUP 4. Pressure. Taking this as an opportunity, the purge nozzles 9 (all the purge nozzles 9) installed on the mounting table 23 are moved in and out upward from the upper surface of the mounting table 23 and connected to each port 40 of the FOUP 4, and each port 40 is switched from the locked state. is open. Next, in the loading port 2 of this embodiment, the purification device P supplies nitrogen gas to the internal space 4S of the purified FOUP 4 to perform a process of replacing the internal space 4S of the FOUP 4 with nitrogen gas (bottom purification process). During the bottom purification process, the gas atmosphere in the FOUP 4 is discharged out of the FOUP 4 from the purge nozzle 9 connected to the port 40 that functions as an exhaust port. Through such bottom purification processing, the moisture concentration and oxygen concentration in FOUP 4 are respectively reduced to below predetermined values, and the surrounding environment of wafer W in FOUP 4 is set to a low-humidity environment and a low-oxygen environment.

本實施形態之裝載端口2，在鎖定處理後，使位於圖2所示位置的載置台23移動至圖7所示對接位置(對接處理)，進行使用移動限制部L將FOUP4之至少兩側保持而進行固定的處理(夾緊處理)，將連結機構221切換為蓋連結狀態(蓋連結處理)，使FOUP門43與裝載端口門22同時移動，開放底座21之開口部21a及FOUP4之搬出入口41，執行解除FOUP4內之密閉狀態的處理(密閉解除處理)。本實施形態之裝載端口2，在將裝載端口門22從開放位置(O)移動至全開位置的處理中，實施基於映射部m的映射處理。映射處理為，使在執行密閉解除處理之正前處於映射退避姿勢的映射部m，在裝載端口門22從全閉位置(C)移動至開放位置(O)之後切換為映射姿勢，使裝載端口門22朝向全開位置向下方移動，藉此，映射部m亦在維持映射姿勢的狀態下向下方移動，使用映射感測器m1、m2對收納於FOUP4內的晶圓W之有無或收納姿勢進行檢測的處理。亦即，藉由從傳送器m1向接收器m2發送信號而在傳送器m1與接收器m2之間形成信號路徑，若晶圓W存在則該信號被遮斷，若晶圓W不存在則不被遮斷而到達接收器m2。藉此可以依序檢測出FOUP4內在高度方向H並列收納的晶圓W之有無或收納姿勢。In the load port 2 of this embodiment, after the locking process, the mounting base 23 located in the position shown in FIG. 2 is moved to the docking position shown in FIG. 7 (docking process), and at least both sides of the FOUP 4 are held using the movement restriction part L. Then, the fixing process (clamping process) is performed, the connection mechanism 221 is switched to the cover connection state (cover connection process), the FOUP door 43 and the load port door 22 are moved simultaneously, and the opening 21 a of the base 21 and the carry-out entrance of the FOUP 4 are opened. 41. Execute the process of releasing the sealed state in FOUP4 (sealed release process). The load port 2 of this embodiment implements mapping processing by the mapping unit m in the process of moving the load port door 22 from the open position (O) to the fully open position. The mapping process is such that the mapping unit m, which was in the mapping retraction posture just before the seal release process is executed, switches to the mapping posture after the load port door 22 moves from the fully closed position (C) to the open position (O), so that the load port The door 22 moves downward toward the fully open position, whereby the mapping unit m also moves downward while maintaining the mapping posture, and the presence or absence or storage posture of the wafer W stored in the FOUP 4 is measured using the mapping sensors m1 and m2. Detection processing. That is, a signal path is formed between the transmitter m1 and the receiver m2 by sending a signal from the transmitter m1 to the receiver m2. If the wafer W is present, the signal is blocked, and if the wafer W is not present, the signal path is not blocked. is intercepted and reaches the receiver m2. In this way, the presence or storage posture of the wafers W stored side by side in the height direction H in the FOUP 4 can be detected sequentially.

藉由執行密閉解除處理使FOUP本體42之內部空間4S與搬送室3之晶圓搬送空間3S成為連通之狀態，依據映射處理檢測出的資訊(晶圓位置)，實施設置於搬送室3之晶圓搬送空間3S的搬送機器人31從規定之晶圓載置架取出晶圓W，或將晶圓W收納於規定之晶圓載置架之處理(搬送處理)。By performing the sealing release process, the internal space 4S of the FOUP body 42 and the wafer transfer space 3S of the transfer chamber 3 are brought into a connected state, and based on the information (wafer position) detected by the mapping process, the wafer transfer space 4S installed in the transfer chamber 3 is implemented. The transfer robot 31 in the round transfer space 3S takes out the wafer W from a predetermined wafer mount or stores the wafer W in a predetermined wafer mount (transfer process).

本實施形態的裝載端口2，在結束FOUP4內之全部晶圓W基於處理裝置M的處理工程之後，藉由門驅動機構27使裝載端口門22移動至全閉位置(C)，將底座21之開口部21a及FOUP4之搬出入口41閉鎖，進行FOUP4之內部空間4S之密閉處理(密閉處理)，接著，執行將連結機構221從蓋連結狀態切換為蓋連結解除狀態之處理(蓋連結解除處理)。藉由該處理，可以將FOUP門43安裝於FOUP本體42，底座21之開口部21a及FOUP4之搬出入口41分別被裝載端口門22、FOUP門43閉鎖，FOUP4之內部空間4S成為密閉狀態。In the load port 2 of this embodiment, after the processing process of all the wafers W in the FOUP 4 by the processing device M is completed, the door drive mechanism 27 moves the load port door 22 to the fully closed position (C), and the base 21 is The opening 21a and the carry-out entrance 41 of the FOUP 4 are closed, the internal space 4S of the FOUP 4 is sealed (sealing process), and then the linking mechanism 221 is switched from the cover connection state to the cover release state (cover release process). . Through this process, the FOUP door 43 can be attached to the FOUP body 42, and the opening 21a of the base 21 and the carry-out entrance 41 of the FOUP 4 are locked by the loading port door 22 and the FOUP door 43 respectively, and the internal space 4S of the FOUP 4 is sealed.

接著，本實施形態的裝載端口2進行對基於移動限制部L的FOUP4之固定狀態(夾緊狀態)予以解除的夾緊解除處理，接著，執行使載置台23移動至與底座21分離的方向之處理(對接解除處理)之後，解除以載置台23上之鎖定爪232鎖定FOUP4之狀態(鎖定解除處理)。藉此，收納有已結束規定之處理的晶圓W之FOUP4從各裝載端口2之載置台23上被交接至容器搬送裝置，被搬送至次一工程。Next, the load port 2 of this embodiment performs a clamping release process to release the fixed state (clamped state) of the FOUP 4 by the movement restricting portion L, and then moves the mounting table 23 in a direction away from the base 21 After the process (the docking release process), the locking state of the FOUP 4 with the lock claw 232 on the mounting table 23 is released (the lock release process). Thereby, the FOUP 4 containing the wafer W that has completed the predetermined processing is transferred from the mounting table 23 of each load port 2 to the container transport device, and is transported to the next process.

歷經這樣的動作流程的本實施形態的EFEM1，其重點為在將供給氮等之惰性氣體的空間與大氣空間進行隔離的部分之周圍，可以防止氧濃度之降低，可以回避作業員進入氧濃度極低的空間時陷入缺氧狀態導致昏厥之虞。The key point of the EFEM 1 of this embodiment that has gone through such an operation flow is to prevent the decrease in oxygen concentration around the part that isolates the space for supplying inert gas such as nitrogen from the atmospheric space, and to avoid the operator from entering the oxygen concentration extreme. There is a risk of fainting due to hypoxia in a low space.

如本實施形態這樣地，適用可以實施底部淨化處理的裝載端口2之情況下，從設置於FOUP4之底面的端口40(扣眼)與設置於裝載端口2之載置台23的淨化噴嘴9之間雖然微小但亦有洩漏底部淨化處理所使用的氮等之惰性氣體。When the load port 2 that can perform bottom purification processing is applied as in this embodiment, there is a gap between the port 40 (eyelet) provided on the bottom surface of the FOUP 4 and the purge nozzle 9 provided on the mounting base 23 of the load port 2. There is a slight leakage of inert gases such as nitrogen used for bottom purification.

於此，本實施形態中，將構成底部淨化裝置P的淨化噴嘴9之與設置於FOUP4之底面的端口40(扣眼)接觸的部位設定為第1調整部位，而適用在載置台23設置有對第1調整部位附近噴出空氣的第1噴出口x1的裝載端口2。Here, in this embodiment, the part where the purification nozzle 9 constituting the bottom purification device P comes into contact with the port 40 (buttonhole) provided on the bottom surface of the FOUP 4 is set as the first adjustment part, and is applied to the mounting table 23 with a pair of The loading port 2 of the first ejection port x1 that ejects air near the first adjustment part.

具體言之，係如圖3所示，在底部淨化處理時設置於FOUP4之底部的端口之中作為供給端口而發揮功能的端口40所接觸的淨化噴嘴9之附近，將朝上方噴出空氣的第1噴出口x1設置於載置台23。該圖中示出，在設置於載置台23的合計4個淨化噴嘴9之中作為供給端口而發揮功能的端口40所連接的3個淨化噴嘴9各別之附近分別設置有第1噴出口x1的態樣。Specifically, as shown in FIG. 3 , during the bottom purification process, the port 40 functioning as a supply port among the ports provided at the bottom of the FOUP 4 is in contact with the purge nozzle 9 near the third port that blows air upward. 1. The ejection port x1 is provided on the mounting base 23. This figure shows that among the total four purge nozzles 9 installed on the mounting table 23, the first discharge port x1 is provided near each of the three purge nozzles 9 connected to the port 40 that functions as a supply port. of manner.

本實施形態，淨化噴嘴9構成為，可以在該淨化噴嘴9能夠接觸FOUP4之端口40的突出位置，與淨化噴嘴9不能夠接觸端口40的退避位置之間升降移動，該淨化噴嘴9之升降移動，係藉由對淨化噴嘴9以可以突出/沒入進行支撐的未圖示的保持部之內部空間進行空氣之供給･排氣來實現。於此，設定為使該淨化噴嘴9之升降移動用之配管適當地分歧，從與淨化噴嘴9之升降移動所使用的空氣相同的空氣供給源可以對第1噴出口x1供給空氣。圖3以箭頭示意表示從各第1噴出口x1噴出的空氣之噴出方向。In this embodiment, the purge nozzle 9 is configured to move up and down between a protruding position where the purge nozzle 9 can contact the port 40 of the FOUP 4 and a retreat position where the purge nozzle 9 cannot contact the port 40. The purge nozzle 9 can move up and down. , is realized by supplying and exhausting air to the internal space of a holding portion (not shown) that can protrude/retract to support the purge nozzle 9. Here, the piping for the upward and downward movement of the purification nozzle 9 is appropriately branched so that the air can be supplied to the first discharge port x1 from the same air supply source as the air used for the upward and downward movement of the purification nozzle 9 . FIG. 3 schematically shows the direction of the air ejected from each first ejection port x1 with an arrow.

接著，和底部淨化處理之開始同時或大致同時從第1噴出口x1噴出空氣，從第1噴出口x1朝向淨化噴嘴9與FOUP4之底面上所設置的端口40所接觸的部位亦即第1調整部位噴出空氣，藉此，即使氮等之惰性氣體僅些微然亦有從淨化噴嘴9與端口40之境界部分洩漏至大氣空間之情況下，亦可以相對的降低第1調整部位中的惰性氣體之濃度，可以使將供給氮等之惰性氣體的空間亦即FOUP4之內部空間4S與大氣空間進行隔離的部分附近中的氧濃度，維持於可以確保作業員之安全性的規定值以上(例如19.5%以上)之濃度。Next, the air is ejected from the first ejection port x1 at the same time or approximately at the same time as the bottom purification process is started, and the first adjustment is made at the location where the purification nozzle 9 contacts the port 40 provided on the bottom surface of the FOUP 4 from the first ejection port x1 By ejecting air from the position, even if the inert gas such as nitrogen leaks slightly from the boundary part of the purge nozzle 9 and the port 40 into the atmospheric space, the amount of the inert gas in the first adjustment part can be relatively reduced. The concentration can maintain the oxygen concentration in the vicinity of the portion that isolates the internal space 4S of the FOUP 4 from the atmospheric space, where inert gas such as nitrogen is supplied, above a prescribed value that ensures the safety of the operator (for example, 19.5% above) concentration.

又，本實施形態的EFEM1係適用，將裝載端口2之底座21之中的與裝載端口門22之境界部分設定為第2調整部位，具備對第2調整部位附近噴出空氣的第2噴出口x2的裝載端口2。In addition, this embodiment is applied to the EFEM 1, and the boundary portion between the base 21 of the load port 2 and the load port door 22 is set as the second adjustment position, and is provided with a second ejection port x2 that ejects air near the second adjustment position. Load port 2.

具體言之，係如圖4(a)及圖4(b)所示，在裝載端口2之底座21之中，在相比開口部更上方之位置設置朝寬度方向延伸的中空狀之頂蓋x21，在頂蓋x21之內部配置空氣供給用配管x22之前端，使從空氣供給用配管x22供給至頂蓋x21之內部的空氣，從設置於頂蓋x21之朝下面的第2噴出口x2朝向下方噴出而構成。圖4(b)係圖4(a)之z-z線剖面示意圖。圖4(a)中，頂蓋x21附加有規定之圖案。又，於頂蓋x21之內部，在第2噴出口x2附近設置有過濾器x23，而且於與底座21接近之角部設置有密封材x24。於圖4以箭頭示意表示從第2噴出口x2噴出的空氣之噴出方向。 Specifically, as shown in FIGS. 4(a) and 4(b) , a hollow top cover extending in the width direction is provided in the base 21 of the loading port 2 at a position above the opening. x21, the front end of the air supply pipe x22 is arranged inside the top cover x21, so that the air supplied from the air supply pipe x22 to the inside of the top cover x21 is directed from the second outlet x2 provided on the bottom of the top cover x21. It is formed by spraying out from below. Figure 4(b) is a schematic cross-sectional view along the z-z line of Figure 4(a). In Fig. 4(a), a predetermined pattern is added to the top cover x21. Moreover, inside the top cover x21, a filter x23 is provided near the second discharge port x2, and a sealing material x24 is provided at a corner close to the base 21. In FIG. 4 , an arrow schematically indicates the ejection direction of the air ejected from the second ejection port x2.

接著，本實施形態的EFEM1，係和底部淨化處理之開始同時或大致同時，從第2噴出口x2對裝載端口2之底座21之中的與裝載端口門22之境界部分亦即第2調整部位噴出空氣。裝載端口2之底座21之中的與裝載端口門22之境界部分亦即第2調整部位係成為，在底部淨化處理後或底部淨化處理中實施的對接處理(使位於圖2所示位置的載置台23移動至圖7所示對接位置之處理)之結束時點，成為裝載端口2之底座21與FOUP門43之境界部分、或者和成為FOUP本體42與FOUP門43之境界部分的部位極接近的位置(參照圖7、圖8)。因此，藉由從第2噴出口x2朝第2調整部位噴出空氣，即使氮等之惰性氣體僅些微然亦有從裝載端口2之底座21與與裝載端口門22之境界部分、或從裝載端口2之底座21與FOUP門43之境界部分，甚至從FOUP本體42與FOUP門43之境界部分洩漏至大氣空間之情況下，亦可以相對的降低第2調整部位附近中的惰性氣體之濃度，可以使將供給氮等之惰性氣體的空間亦即搬送室3之內部空間3S或FOUP4之內部空間4S與大氣空間進行隔離的部分附近中的氧濃度，維持於可以確保作業員之安全性的規定值以上之濃度。又，圖2、圖4、圖7及圖8以外之圖中省略包含第2噴出口x2之頂蓋x21整體。 Next, in the EFEM 1 of this embodiment, at the same time or substantially at the same time as the bottom purification process is started, the second adjustment portion is adjusted from the second discharge port x2 to the portion of the base 21 of the load port 2 that is bounded by the load port door 22. Blow out air. The portion of the base 21 of the load port 2 that is bounded by the load port door 22, that is, the second adjustment portion is a docking process performed after the bottom purification process or during the bottom purification process (to make the load port located at the position shown in Figure 2 The end point of the process of moving the platform 23 to the docking position shown in FIG. 7 is the boundary between the base 21 of the loading port 2 and the FOUP door 43, or is very close to the boundary between the FOUP body 42 and the FOUP door 43. position (see Figure 7 and Figure 8). Therefore, by ejecting air from the second ejection port x2 toward the second adjustment portion, even a slight amount of inert gas such as nitrogen can escape from the boundary portion between the base 21 of the load port 2 and the load port door 22, or from the load port. 2, the boundary part between the base 21 and the FOUP door 43, even when the boundary part between the FOUP body 42 and the FOUP door 43 leaks into the atmospheric space, the concentration of the inert gas in the vicinity of the second adjustment part can be relatively reduced. The oxygen concentration in the vicinity of the portion where an inert gas such as nitrogen is supplied, that is, the inner space 3S of the transfer chamber 3 or the inner space 4S of the FOUP 4 is isolated from the atmospheric space, is maintained at a prescribed value that ensures the safety of the operator. concentration above. In addition, the entire top cover x21 including the second discharge port x2 is omitted in figures other than FIG. 2 , FIG. 4 , FIG. 7 and FIG. 8 .

又，本實施形態的EFEM1適用，如圖3及圖 10所示，將晶圓搬送室3與裝載端口2之底座21之境界部分設定為第3調整部位，具備對第3調整部位附近噴出空氣的第3噴出口x3的裝載端口2。 In addition, this embodiment is applicable to EFEM1, as shown in Fig. 3 and Fig. As shown in FIG. 10 , the boundary between the wafer transfer chamber 3 and the base 21 of the load port 2 is set as the third adjustment position, and the load port 2 is provided with a third ejection port x3 for ejecting air near the third adjustment position.

具體言之，如圖3所示，裝載端口2之底座21構成為具備：平板狀之底座本體211；在底座本體211之中的與載置於載置台23上之FOUP4呈對置之面(朝前之面)中的左右兩側上所設置的側部框架212；及以和各側部框架212之中朝向外側方之面密接的姿勢而設置的中空管框架213。於各中空管框架213沿著高度方向按照規定間距設置複數個在朝向外側方的面具有開口的第3噴出口x3，設定為從各第3噴出口x3朝向外側方噴出空氣。於圖10以箭頭示意表示從各第3噴出口x3噴出的空氣之噴出方向。圖10將裝載端口2之底座21之中附加規定之圖案而表示的中空管框架213以外予以省略。又，圖3及圖10以外之圖中將包含第3噴出口x3之中空管框架213予以省略。 Specifically, as shown in FIG. 3 , the base 21 of the loading port 2 is configured to include: a flat base body 211; and a surface ( The side frames 212 are provided on the left and right sides of the front surface); and the hollow tube frame 213 is provided in a posture closely contacting the outer surface of each side frame 212. Each hollow tube frame 213 is provided with a plurality of third ejection ports x3 having openings on its outward facing surface at predetermined intervals along the height direction, and is configured to eject air outward from each third ejection port x3. In FIG. 10 , the direction of the air ejected from each third ejection port x3 is schematically shown by an arrow. FIG. 10 omits the hollow tube frame 213 shown in the base 21 of the loading port 2 with a predetermined pattern added thereto. In addition, in figures other than FIG. 3 and FIG. 10 , the hollow pipe frame 213 including the third discharge port x3 is omitted.

接著，本實施形態的EFEM1藉由適當之配管與未圖示的空氣供給源與第3噴出口x3連接，在該EFEM1之設定時按照對搬送室3內供給惰性氣體之時序，亦即按照驅動設置於搬送室3內的風扇過濾單元32、於搬送室3之晶圓搬送空間3S產生下降氣流、及使高清淨度的氣體亦即惰性氣體(環境氣體)在晶圓搬送空間3S開始循環之時序，從第3噴出口x3朝向搬送室3與底座21之境界部分亦即第3調整部位噴出空氣，藉此則即使惰性氣體僅些微然亦有從搬送室3與底座21之境界部分洩漏至大氣空間之情況下，亦可以相對的降低第3調整部位中的惰性氣體之濃度，可以使對供給惰性氣體的空間亦即搬送室3之內部空間與大氣空間進行隔離的部分附近的氧濃度，維持於規定值以上之安全濃度。Next, the EFEM1 of this embodiment is connected to the third ejection port x3 through appropriate piping and an air supply source (not shown). The EFEM1 is set according to the timing of supplying the inert gas to the transfer chamber 3, that is, according to the driving sequence. The fan filter unit 32 installed in the transfer chamber 3 generates a downward airflow in the wafer transfer space 3S of the transfer chamber 3 and circulates high-purity gas, that is, an inert gas (ambient gas) in the wafer transfer space 3S. At this time, the air is ejected from the third ejection port x3 toward the third adjustment position, which is the boundary between the transfer chamber 3 and the base 21. This allows the inert gas to leak even slightly from the boundary between the transfer chamber 3 and the base 21. In the case of atmospheric space, the concentration of the inert gas in the third adjustment part can be relatively reduced, and the oxygen concentration near the part that isolates the internal space of the transfer chamber 3 from the atmospheric space, which is the space for supplying the inert gas, can be increased. Maintain a safe concentration above the specified value.

再者，本實施形態的EFEM1適用於具備，將在搬送室3之外側收納有裝載端口2之中的門驅動機構27之一部分且於內部空間形成有惰性氣體之下降氣流的驅動系統收納箱28之周圍設定為第4調整部位，並對第4調整部位附近噴出空氣的第4噴出口(省略圖示)的裝載端口2。Furthermore, the EFEM 1 of this embodiment is suitable for a drive system storage box 28 that houses a part of the door drive mechanism 27 in the load port 2 outside the transfer chamber 3 and forms a downflow of inert gas in the internal space. The loading port 2 has a fourth discharge port (not shown) that discharges air to the vicinity of the fourth adjustment site.

接著，本實施形態的EFEM1，係藉由適當之配管與未圖示的空氣供給源與第4噴出口連接，該EFEM1之設定時係按照對搬送室3內供給惰性氣體之時序，亦即按照驅動搬送室3內設置的風扇過濾單元32、於搬送室3之晶圓搬送空間3S產生下降氣流、及使高清淨度的氣體亦即惰性氣體(環境氣體)在晶圓搬送空間3S開始循環之時序，從第4噴出口朝向第4調整部位噴出空氣，藉此則即使來自驅動系統收納箱28之周圍的惰性氣體僅些微然亦有洩漏至大氣空間之情況下，亦可以相對的降低第4調整部位中的惰性氣體之濃度，在隔離供給惰性氣體的空間亦即驅動系統收納箱28之內部空間與大氣空間的部分附近(隔離部分起1mm之範圍)可以維持於安全的氧濃度。Next, the EFEM1 of this embodiment is connected to the fourth ejection port through an appropriate piping and an air supply source (not shown). The setting of the EFEM1 is in accordance with the timing of supplying the inert gas to the transfer chamber 3, that is, in accordance with The fan filter unit 32 installed in the transfer chamber 3 is driven to generate a downward airflow in the wafer transfer space 3S of the transfer chamber 3, and the high-purity gas, that is, the inert gas (ambient gas) starts to circulate in the wafer transfer space 3S. At this time, the air is ejected from the fourth ejection port toward the fourth adjustment position. By this, even if the inert gas from the surroundings of the drive system storage box 28 only slightly leaks into the atmospheric space, the fourth adjustment position can be relatively reduced. The concentration of the inert gas in the adjustment part can be maintained at a safe oxygen concentration in the vicinity of the space that isolates the inert gas supply space, that is, the internal space of the drive system storage box 28 and the atmospheric space (a range of 1 mm from the isolation portion).

如此般，本實施形態的EFEM1，係分別從第1噴出口x1、第2噴出口x2、第3噴出口x3、第4噴出口朝向隔離供給氮等之惰性氣體的空間與大氣的部分(隔離部分)亦即第1調整部位、第2調整部位、第3調整部位、第4調整部位噴出空氣，藉此，可以抑制隔離部分附近的局部性氧濃度降低，可以提高作業員之安全性。In this way, the EFEM 1 of this embodiment is a portion (isolation) of the space and the atmosphere where an inert gas such as nitrogen is supplied from the first outlet x1, the second outlet x2, the third outlet x3, and the fourth outlet respectively. Parts), that is, the first adjustment part, the second adjustment part, the third adjustment part, and the fourth adjustment part eject air, thereby suppressing a local decrease in oxygen concentration near the isolation part and improving operator safety.

再者，依據本實施形態的EFEM1，藉由分別從第1噴出口x1、第2噴出口x2、第3噴出口x3、第4噴出口朝向第1調整部位、第2調整部位、第3調整部位、第4調整部位噴出空氣，亦可以排除空氣之噴出前端所附著的微塵(例如鎖鍵、定位銷(registration pin)或FOUP4之表面附著的微塵等)。Furthermore, according to the EFEM 1 of this embodiment, by moving from the first ejection port x1, the second ejection port x2, the third ejection port x3, and the fourth ejection port toward the first adjustment position, the second adjustment position, and the third adjustment position respectively, The air is ejected from the position and the fourth adjustment part, and the dust attached to the front end of the air ejection can also be eliminated (such as dust attached to the lock key, registration pin or the surface of FOUP4, etc.).

特別是，本實施形態的EFEM1具備噴出量調整手段，藉由該噴出量調整手段，可以與對搬送室3的惰性氣體之供給量、基於底部淨化裝置的淨化用氣體之供給量、或各調整部位中的惰性氣體朝向大氣壓側之洩漏量彼等之任一之量對應地，調整從第1噴出口x1、第2噴出口x2、第3噴出口x3、第4噴出口噴出的空氣之量。依據這樣的構成，可以藉由適度的空氣供給量來抑制隔離供給氮等之惰性氣體的空間與大氣的部分(隔離部分)亦即第1調整部位、第2調整部位、第3調整部位、第4調整部位中的氧濃度之降低，可以防止･抑制空氣之過度使用。In particular, the EFEM 1 of the present embodiment is provided with a discharge amount adjustment means. By means of the discharge amount adjustment means, the supply amount of the inert gas to the transfer chamber 3, the supply amount of the purification gas by the bottom purification device, or each adjustment can be made. The amount of air ejected from the first ejection port x1, the second ejection port x2, the third ejection port x3, and the fourth ejection port is adjusted accordingly to any amount of leakage of the inert gas in the location to the atmospheric pressure side. . According to such a structure, the portion (isolation portion) that isolates the space where inert gas such as nitrogen is supplied from the atmosphere, that is, the first adjustment portion, the second adjustment portion, the third adjustment portion, and the third adjustment portion can be suppressed with an appropriate air supply amount. 4. Adjusting the reduction of oxygen concentration in the site can prevent and inhibit excessive use of air.

以上，針對本發明之實施形態進行說明，但本發明不限定於前述實施形態之構成。例如上述實施形態中示出，在針對供給氮等之惰性氣體的空間與大氣進行隔離的部分(隔離部分)亦即調整部位(第1調整部位、第2調整部位、第3調整部位、第4調整部位)之附近設置有噴出空氣的噴出口的態樣，但亦可以採用在調整部位之附近設置有氣體吸引口的態樣。該情況下，係在調整部位(第1調整部位、第2調整部位、第3調整部位、第4調整部位)之附近配置，可以使從供給氮等之惰性氣體的空間朝向大氣空間洩漏的些微之惰性氣體流入的例如準密閉構造之框架，藉由設置於該框架的氣體吸引口對框架內進行吸引，藉此，可以將隔離惰性氣體供給空間與大氣空間的部分附近(隔離部分起1mm之範圍)中的氧濃度，維持於就作業員而言安全的濃度。又，構成為使從氣體吸引口吸引的惰性氣體回收至適當地之回收空間(回收容器)即可。The embodiments of the present invention have been described above. However, the present invention is not limited to the configuration of the above-mentioned embodiments. For example, in the above-described embodiment, the adjustment portions (first adjustment portion, second adjustment portion, third adjustment portion, fourth adjustment portion) are portions (isolation portions) that are isolated from the atmosphere for supplying inert gas such as nitrogen. An outlet for ejecting air is provided near the adjustment part), but a gas suction port may be provided near the adjustment part. In this case, it is arranged near the adjustment parts (the first adjustment part, the second adjustment part, the third adjustment part, and the fourth adjustment part), and it is possible to prevent a small amount of leakage from the space where the inert gas such as nitrogen is supplied to the atmospheric space. For example, a frame with a quasi-sealed structure in which inert gas flows into can be sucked into the frame through a gas suction port provided in the frame, thereby making it possible to isolate the inert gas supply space from the atmospheric space near the part (1mm from the isolation part) The oxygen concentration within the range) is maintained at a concentration that is safe for the operator. Moreover, it may be configured so that the inert gas sucked from the gas suction port is recovered into an appropriate recovery space (recovery container).

採用在調整部位附近設置氣體吸引口之構成之情況下，依據具備吸引力調整手段的EFEM，藉由該吸引力調整手段而與對搬送室的惰性氣體之供給量、基於底部淨化裝置之淨化用氣體之供給量、或各調整部位中的惰性氣體朝向大氣壓側之洩漏量的彼等任一之量對應而進行基於氣體吸引口的吸引力之調整，即可藉由適度的吸引力來抑制隔離氮等惰性氣體的供給空間與大氣的部分(隔離部分)亦即第1調整部位、第2調整部位、第3調整部位、第4調整部位中的氧濃度降低。When a gas suction port is installed near the adjustment part, the EFEM has a suction force adjustment means, and the suction force adjustment means depends on the supply amount of inert gas to the transfer chamber and the purification effect of the bottom purification device. By adjusting the suction force based on the gas suction port in accordance with either the gas supply amount or the leakage amount of the inert gas in each adjustment part toward the atmospheric pressure side, isolation can be suppressed by a moderate suction force. The oxygen concentration in the first adjustment portion, the second adjustment portion, the third adjustment portion, and the fourth adjustment portion is reduced in the portion (isolation portion) between the supply space of the inert gas such as nitrogen and the atmosphere.

又，亦可以取代與第1調整部位、第2調整部位、第3調整部位、第4調整部位之全部對應而設置有噴出口或氣體吸引口的態樣，而採用僅在任一個調整部位、或僅在選擇的2個調整部位、或僅在選擇的3個選擇部位設置有噴出口或氣體吸引口的態樣。Moreover, instead of providing the ejection port or the gas suction port corresponding to all of the first adjustment portion, the second adjustment portion, the third adjustment portion, and the fourth adjustment portion, only one of the adjustment portions, or the gas suction port may be provided. A mode in which an ejection port or a gas suction port is provided at only two selected adjustment locations or only at three selected selection locations.

上述之實施形態，作為晶圓收納容器係採用FOUP。但是本發明亦可以使用FOUP以外之晶圓收納容器，例如可以使用MAC(Multi Application Carrier)、H-MAC(Horizontal-MAC)、FOSB(Front Open Shipping Box)等。In the above embodiment, a FOUP is used as the wafer storage container. However, the present invention can also use wafer storage containers other than FOUP, for example, MAC (Multi Application Carrier), H-MAC (Horizontal-MAC), FOSB (Front Open Shipping Box), etc. can be used.

上述實施形態中作為底部淨化處理等所使用的惰性氣體雖示出氮氣體，但不限定於此，亦可以使用乾燥氣體、氬氣體等所期待之氣體。In the above embodiment, nitrogen gas is used as the inert gas used for the bottom purification process, etc., but the invention is not limited thereto, and any desired gas such as dry gas or argon gas may also be used.

又，容器門(FOUP門)從全閉位置移動至全開位置之過程中暫時成為傾斜姿勢(伴隨著描繪部分圓弧狀之軌跡的動作)者亦可。In addition, the container door (FOUP door) may temporarily enter a tilted posture (accompanied by the movement of drawing a partially arc-shaped trajectory) in the process of moving from the fully closed position to the fully open position.

其他，各部之具體構成亦不限定於前述實施形態，在不脫離本發明之要旨之範圍可以進行各種變形。In addition, the specific configuration of each part is not limited to the above-described embodiment, and various modifications can be made within the scope that does not deviate from the gist of the present invention.

1:EFEM1:EFEM

2:裝載端口2: Loading port

21:底座21:Base

22:裝載端口門22: Loading port door

23:載置台23: Loading platform

27:門驅動機構27:Door drive mechanism

28:驅動系統收納箱28: Drive system storage box

3:搬送室3:Transportation room

4:晶圓收納容器(FOUP) 4: Wafer storage container (FOUP)

43:容器門(FOUP門) 43: Container door (FOUP door)

9:噴嘴 9:Nozzle

P:底部淨化裝置 P: Bottom purification device

W:晶圓 W:wafer

5:密封部 5:Sealing part

24:腳部 24:Feet

25:水平基台(支撐台) 25: Horizontal base (support platform)

211:底座本體 211:Base body

212:側部框架 212: Side frame

213:中空管框架 213:Hollow tube frame

214:窗單元 214:Window unit

215:開口部 215:Opening part

231:突起(銷) 231:Protrusion (pin)

232:鎖定爪 232:Lock claw

x1:第1噴出口 x1: No. 1 ejection port

x3:第3噴出口 x3: 3rd spout

C:全閉位置 C: Fully closed position

L:移動限制部 L: Movement restriction department

2C:控制部 2C:Control Department

21a:開口部 21a: opening

3C:控制部 3C: Control Department

[圖1]示意表示實施形態的EFEM與其周邊裝置之相對位置關係的側面圖。 [圖2]示意表示FOUP從底座分離而且裝載端口門處於全閉位置的狀態之實施形態的裝載端口之側剖面的圖。 [圖3]將實施形態中的裝載端口之一部分省略而表示之斜視圖。 [圖4]圖3之x方向觀察圖及該圖4(a)之z-z線剖面之擴大示意圖。 [圖5]圖3之y方向觀察圖。 [圖6]實施形態中的窗單元之整體斜視圖。 [圖7]與圖2對應而表示FOUP接近底座且裝載端口門處於全閉位置的狀態之圖。 [圖8]與圖2對應而表示裝載端口門處於開放位置的狀態之圖。 [圖9]表示實施形態中的映射部的圖。 [圖10]示意表示實施形態中的EFEM與其周邊裝置之相對位置關係的正面圖。[Fig. 1] A side view schematically showing the relative positional relationship between the EFEM and its peripheral devices according to the embodiment. [Fig. 2] Fig. 2 is a schematic side cross-sectional view of a load port in an embodiment in which the FOUP is separated from the base and the load port door is in a fully closed position. [Fig. 3] A perspective view showing a part of the load port in the embodiment with a portion omitted. [Fig. 4] An x-direction observation view of Fig. 3 and an enlarged schematic view of the z-z line section of Fig. 4(a). [Figure 5] y-direction observation view of Figure 3. [Fig. 6] An overall perspective view of the window unit in the embodiment. [Fig. 7] A diagram corresponding to Fig. 2 showing a state in which the FOUP is close to the base and the load port door is in a fully closed position. [Fig. 8] A diagram corresponding to Fig. 2 showing a state in which the load port door is in an open position. [Fig. 9] A diagram showing a mapping unit in the embodiment. [Fig. 10] A front view schematically showing the relative positional relationship between the EFEM and its peripheral devices in the embodiment.

2C:控制部 2C:Control Department

5:密封部 5:Sealing part

9:噴嘴 9:Nozzle

21:底座 21:Base

21a:開口部 21a: opening

22:裝載端口門 22: Loading port door

23:載置台 23: Loading platform

24:腳部 24:Feet

25:水平基台(支撐台) 25: Horizontal base (support platform)

28:驅動系統收納箱 28: Drive system storage box

211:底座本體 211:Base body

212:側部框架 212: Side frame

213:中空管框架 213:Hollow tube frame

214:窗單元 214:Window unit

215:開口部 215:Opening part

231:突起(銷) 231:Protrusion (pin)

232:鎖定爪 232:Lock claw

x1:第1噴出口 x1: No. 1 ejection port

x3:第3噴出口 x3: 3rd spout

C:全閉位置 C: Fully closed position

L:移動限制部 L: Movement restriction department

P:底部淨化裝置 P: Bottom purification device

Claims (2)

一種EFEM，其特徵為， 具備：搬送室，其藉由在設置於壁面的開口連接有裝載端口及處理裝置而在內部構成大致閉鎖的晶圓搬送空間；及 晶圓搬送裝置，其配設於前述晶圓搬送空間，且在載置於前述裝載端口的晶圓收納容器與前述處理裝置之間進行晶圓之搬送； 該EFEM構成為，在前述晶圓搬送空間生成下降氣流之同時使惰性氣體循環於前述晶圓搬送空間； 前述裝載端口為具備以下者： 底座，其構成前述搬送室之前壁面之一部分，而且呈形成有向搬送室之內部空間開放的開口部之板狀； 對前述底座之開口部進行開關的裝載端口門； 以大致水平姿勢設置於前述底座的載置台； 底部淨化裝置，其使設置於前述載置台的噴嘴接觸於前述載置台所載置的前述晶圓收納容器之底面上配置的端口之狀態下從前述晶圓收納容器之底面側可以將該晶圓收納容器內之氣體氛圍替換為由惰性氣體形成的淨化用氣體；及 對前述裝載端口門進行驅動的門驅動機構； 前述噴嘴係在複數個調整部位之中的至少1個調整部位附近設置有噴出空氣的噴出口或氣體吸引口， 彼等複數個調整部位為， 接觸前述端口的第1調整部位， 包含前述底座之中的與前述裝載端口門之境界部分或與前述晶圓收納容器之門亦即容器門之境界部分之至少一者的第2調整部位， 前述搬送室與前述底座之境界部分亦即第3調整部位， 在前述搬送室之外側用於收納前述裝載端口之中的前述門驅動機構之一部分且於內部空間形成有惰性氣體之下降氣流的驅動系統收納箱之周圍亦即第4調整部位。An EFEM characterized by, It is provided with: a transfer chamber that forms a substantially closed wafer transfer space inside by connecting a loading port and a processing device to an opening provided in the wall; and A wafer transfer device disposed in the wafer transfer space and transporting wafers between a wafer container placed in the load port and the processing device; The EFEM is configured to generate a downward airflow in the wafer transfer space and circulate an inert gas in the wafer transfer space; The aforementioned load ports are those with the following: The base forms part of the front wall of the transfer chamber and is in the shape of a plate with an opening opening to the internal space of the transfer chamber; A loading port door that opens and closes the opening of the base; A mounting platform installed on the aforementioned base in a substantially horizontal position; A bottom purification device capable of cleaning the wafer from the bottom side of the wafer storage container in a state where the nozzle provided on the mounting table is in contact with a port disposed on the bottom surface of the wafer container placed on the mounting table. The gas atmosphere in the storage container is replaced with purification gas formed from inert gas; and a door drive mechanism for driving the aforementioned loading port door; The nozzle is provided with an ejection port or a gas suction port for ejecting air near at least one of the plurality of adjustment parts, Their plural adjustment positions are, Contact the first adjustment part of the aforementioned port, The second adjustment portion includes at least one of the boundary portion of the base and the loading port door or the door of the wafer storage container, that is, the container door, The boundary between the aforementioned transfer chamber and the aforementioned base is the third adjustment position. The fourth adjustment position is located around a drive system storage box outside the transfer chamber that accommodates a part of the door drive mechanism in the load port and forms a downflow of inert gas in the internal space. 如請求項1之EFEM，其中 具備：調整手段，其對應於前述惰性氣體對前述晶圓搬送空間之供給量、基於前述底部淨化裝置的淨化用氣體之供給量、或前述各調整部位中的惰性氣體朝向大氣壓側之洩漏量的彼等之任一之量，來調整從前述噴出口噴出的空氣之量或基於前述氣體吸引口的吸引力。Such as the EFEM of request item 1, where It is provided with: an adjustment means corresponding to the supply amount of the inert gas to the wafer transfer space, the supply amount of the purification gas by the bottom purification device, or the leakage amount of the inert gas in each of the adjustment parts to the atmospheric pressure side. Either of these quantities is used to adjust the amount of air ejected from the ejection port or the suction force based on the gas suction port.
TW108143857A 2019-03-13 2019-12-02 Equipment front-end module (EFEM) TWI819160B (en)

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