TWI817229B - 下電極元件、等離子體處理裝置和更換聚焦環的方法 - Google Patents
下電極元件、等離子體處理裝置和更換聚焦環的方法 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
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- 210000002381 plasma Anatomy 0.000 description 45
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- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
一種下電極元件、等離子體處理裝置和更換聚焦環的方法,其中,所述下電極元件包括:基座,用於承載待處理基片;聚焦環,環繞於所述基座的周邊;遮蓋環,設於所述聚焦環下方,沿其周向設有複數個凹槽;移動塊,設於所述凹槽內,其內側頂角設有臺階,所述臺階用於支撐部分聚焦環;驅動裝置,與所述移動塊連接,用於驅動所述移動塊帶動聚焦環上下移動。利用所述下電極元件更換聚焦環時無需打開反應腔就能夠實現更換。
Description
本發明涉及半導體的領域,尤其涉及一種下電極元件、等離子體處理裝置和更換聚焦環的方法。
在半導體元件製造的各種工序中,等離子體處理是將待處理基片加工成設計圖案的關鍵製程。在典型的等離子體處理製程中,製程氣體在射頻(Radio Frequency,RF)激勵作用下形成等離子體。這些等離子體在經過上電極和下電極之間的電場(電容耦合)或者通過電感線圈將射頻電磁場送入反應腔形成等離子體(電感耦合),利用等離子體使得待處理基片表面發生物理轟擊作用及化學反應,從而對待處理基片表面進行處理。
習知等離子體處理裝置通常會在待處理基片的周邊設置一個聚焦環,所述聚焦環用於改變待處理基片邊緣的氣流和電磁場分佈,起到提高待處理基片蝕刻性能的作用。由於聚焦環長期處於等離子體蝕刻環境中,聚焦環隨著蝕刻時間的增加會被逐漸侵蝕,因此在達到一定的蝕刻時長時,需要更換聚焦環。目前更換聚焦環的方法需要人工打開等離子體處理裝置的反應腔,該過程增加了維護人員工作強度同時也會降低等離子體處理裝置的實際工作效率。針對這一問題,迫切需要設計一種新的聚焦環托舉、搬運結構,使得無需打開反應腔就能夠實現更換。
本發明解決的技術問題是提供了一種下電極元件、等離子體處理裝置和更換聚焦環的方法,以使無需打開反應腔就能實現聚焦環的更換。
為解決上述技術問題,本發明提供一種下電極元件,包括:基座,用於承載待處理基片;聚焦環,環繞於所述基座的周邊;遮蓋環,設於所述聚焦環下方,沿其周向設有複數個凹槽;移動塊,設於所述凹槽內,其內側設有臺階,所述臺階用於支撐部分聚焦環;驅動裝置,與所述移動塊連接,用於驅動所述移動塊帶動聚焦環上下移動。
較佳的,所述移動塊的材料為陶瓷材料。
較佳的,所述移動塊相對於遮蓋環的外側壁向外凸出,所述驅動裝置與所述凸出的移動塊連接。
較佳的,所述驅動裝置為氣缸驅動裝置或者電驅動裝置。
較佳的,所述驅動裝置為氣缸驅動裝置時,所述驅動裝置包括氣缸和驅動桿,所述驅動桿與所述移動塊連接。
較佳的,還包括:等離子體約束裝置,位於所述遮蓋環的下方,所述驅動桿穿過等離子體約束裝置;接地環,位於所述遮蓋環的下方,包圍所述基座,與所述氣缸連接。
較佳的,所述凹槽的個數為3個及3個以上。
較佳的,還包括:承載環,所述承載環包括環部和沿環部徑向設置的複數個輻條,所述輻條設於所述移動環的下方,所述環部的直徑大於遮蓋環的直徑;所述驅動裝置與承載環連接,驅動所述承載環運動,帶動所述移動塊和聚焦環上下移動。
較佳的,所述承載環與移動塊之間可拆卸連接。
較佳的,所述承載環與移動塊之間通過螺絲連接。
較佳的,所述承載環的材料包括:為陶瓷材料。
較佳的,所述承載環為環狀結構,所述承載環設於所述移動塊的下方。
較佳的,還包括:機械手裝置,當所述聚焦環被驅動裝置抬起後,用於取出所述聚焦環,或者用於將所述聚焦環至於基座的周邊。
較佳的,所述臺階位於所述移動塊的內側的頂角。
相應的,本發明還提供一種等離子處理裝置,包括:反應腔;上述下電極元件,位於所述反應腔內。
較佳的,還包括:氣體噴淋頭,位於所述反應腔的頂部,與所述下電極相對設置,用於向所述反應腔內輸送反應氣體。
較佳的,還包括:絕緣窗口,位於所述反應腔的頂部;電感線圈,位於所述絕緣窗口上;氣體輸送裝置,用於向所述反應腔內輸送反應氣體。
較佳的,還包括:真空泵,用於使反應腔內為真空環境。
相應的,本發明還提供一種更換聚焦環的方法,包括下列步驟:提供上述下電極元件;利用所述驅動裝置,使移動塊向上移動帶動聚焦環向上移動;以及當所述聚焦環被抬起後,利用機械手裝置取下所述聚焦環。
較佳的,還包括下列步驟:提供一新的聚焦環;將所述新的聚焦環至於所述移動塊的臺階上;將所述新的聚焦環置於所述移動塊的臺階上之後,利用驅動裝置帶動移動塊和聚焦環向下移動,直至所述待處理基片置於基座的表面。
與習知技術相比,本發明實施例的技術方案具有以下有益效果:
本發明技術方案提供的下電極元件中,所述聚焦環暴露於等離子體環境中被侵蝕的不再滿足製程要求時,利用所述驅動裝置驅動移動塊向上移動,所述移動塊在向上移動的過程中會帶動聚焦環向上運動,再利用機械手裝置就能夠將不滿足製程要求的聚焦環取出。再利用機械手裝置將一新的聚焦環置於移動塊的凹槽內,新的聚焦環和移動塊在驅動裝置的作用下向下移動至製程狀態以用於下一步的蝕刻製程。即:更換聚焦環無需打開反應腔,使反應腔內的真空環境不被破壞,那麼更換聚焦環後,無需再調整反應腔內的真空度可以直接進行下一步製程,因此,有利於提高等離子體處理裝置的工作效率。
正如先前技術所述,聚焦環的更換需要手動打開反應腔,為此,本發明致力於提供一種下電極元件、等離子體處理裝置和更換聚焦環的方法,使聚焦環的更換無需打開反應腔就能夠實現更換,以下進行詳細說明:
圖1為本發明一種等離子體處理裝置的結構示意圖。
請參考圖1,等離子體處理裝置1包括:反應腔10;下電極元件11,位於所述反應腔10的底部,用於承載待處理基片W;絕緣窗口12,位於所述反應腔10的頂部;電感線圈13,位於所述絕緣窗口12的表面。
在本實施例中,所述等離子體處理裝置1為電感耦合等離子體蝕刻裝置(ICP),所述等離子體處理裝置1還包括:氣體輸送裝置14,用於向所述反應腔10內輸送反應氣體;射頻功率源15,與電感線圈13連接;偏置射頻功率源16通過射頻匹配網路17將偏置射頻電壓施加到下電極元件11上,用於控制等離子體中帶電粒子的轟擊方向;反應腔10的下方還設置一真空泵18,用於將反應副產物排出反應腔10,維持反應腔10的真空環境。
在一種實施例中,反應腔10的側壁靠近絕緣視窗12的一端設置氣體輸送裝置14,在另一實施例中還可以在絕緣視窗12的中心區域設置氣體輸送裝置14,氣體輸送裝置14用於將反應氣體注入反應腔10內,所述射頻功率源15的射頻功率驅動電感線圈13產生較強的高頻交變磁場,使得反應腔100內低壓的反應氣體被電離產生等離子體。等離子體中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子,所述活性粒子可以和待處理基片W的表面發生多種物理和化學反應,使得基片W表面的形貌發生改變,即完成蝕刻過程。
在本實施例中,等離子體處理裝置1為電容耦合等離子體蝕刻裝置(CCP),所述等離子體處理裝置1還包括:位於所述反應腔10的頂部的安裝基板(和位於安裝基板上的氣體噴淋頭,所述氣體噴淋頭與靜電夾盤相對設置;與所述氣體噴淋頭連接的氣體供給裝置,所述氣體供給裝置用於向氣體噴淋頭內輸送反應氣體;連接於氣體噴淋頭或者基座的射頻功率源,對應的氣體噴淋頭或者基座接地,所述射頻功率源產生的射頻訊號通過氣體噴淋頭與基座形成的電容使反應氣體轉化為等離子體,所述等離子體用於對待處理基片進行等離子體製程處理。
以下對下電極元件11進行詳細說明:
圖2為本發明一種下電極元件的結構示意圖;圖3是本發明一種遮蓋環的俯視圖;圖4是本發明圖2下電極元件的俯視圖;圖2是圖4沿A-A1線的剖面示意圖。
請參考圖2,下電極元件11包括:基座101,用於承載待處理基片W;聚焦環103,環繞於所述基座101的周邊;遮蓋環104,設於所述聚焦環103周邊且頂面暴露於上方的等離子體,其中遮蓋環104的底面低於聚焦環103的底面,沿遮蓋環104的周向設有複數個凹槽;移動塊105,設於所述凹槽內,其內側設有臺階,所述臺階用於支撐部分聚焦環103,移動塊105的上表面可以與遮蓋環104的上平面平齊以改善等離子處理的均勻性;承載環106,位於所述移動塊105的下方;驅動裝置,與所述承載環106連接,用於驅動所述承載環106帶動移動環105和聚焦環103上下移動。
所述下電極元件11還包括:靜電夾盤102,位於所述基座101上,用於靜電吸附待處理基片W。在對待處理基片W進行表面處理時,為了改善待處理基片W邊緣等離子體分佈的不均勻性,在所述待處理基片W的周邊設置聚焦環103,相當於向外擴大了待處理基片W的半徑,使得聚焦環103上方產生和待處理基片W上方相同條件的等離子體,有效地將待處理基片W上方的等離子體分佈邊緣延展到聚焦環103的外側壁,增大了等離子體的分佈範圍,拓寬了待處理基片W表面上等離子體的密度分佈曲線,使待處理基片W上等離子體的密度分佈趨於平緩,則待處理基片W上的等離子體密度分佈更加均勻化,有利於保證邊緣區域和中心區域蝕刻製程的均勻性。
所述聚焦環103的材料包括矽或者碳化矽,所述待處理基片W的材料包括矽,因此,在對待處理基片W表面進行等離子體處理的過程中,也易對聚焦環103的表面進行蝕刻,即:在對待處理基片W表面進行等離子體處理的過程中,聚焦環103的高度會被不斷削減,當所述聚焦環103的高度削減到一定程度時,將難以滿足製程的要求,此時需要更換新的聚焦環103。
在本實施例中,所述驅動裝置為氣缸驅動裝置,具體包括:氣缸108和驅動桿107。在其他實施例中,所述驅動裝置為電驅動裝置。
在本實施例中,所述移動塊105相對於遮蓋環104的外側壁向外凸出,所述驅動裝置與所述凸出的移動塊105連接。
所述遮蓋環104用於保護位於所述遮蓋環104下方的零部件免受等離子體的腐蝕。所述遮蓋環104的材料包括:氧化矽。沿所述遮蓋環104的周向開設複數個凹槽104a(請見圖3),所述凹槽104a用於容納移動塊105,所述移動塊105的材料包括:陶瓷材料,使所述移動塊105暴露於等離子體環境中,能夠抵抗等離子體的腐蝕。在一種實施例中,所述移動塊105的內側頂角還設有臺階105a,在其他實施例中,所述臺階105a還可以設於移動塊105內側的其它位置,所述臺階105a用於支撐部分聚焦環103,這樣利用驅動裝置(氣缸108和驅動桿107)驅動承載環106上下移動時,能夠帶動聚焦環103上下移動。
所述承載環106與移動塊105之間通過連接件110(見圖4)可拆卸連接,具體的,在一種實施例中,所述承載環106與移動塊105之間通過螺絲固定連接。
等離子體處理裝置還包括:等離子體約束裝置,位於所述遮蓋環104下方,所述驅動桿107穿過等離子體約束裝置;接地環109,位於所述遮蓋環104的下方,包圍所述基座101,與所述氣缸108連接。
請參考圖5,所述承載環106包括環部106a和沿環部106a徑向設置的複數個輻條106b,在此以輻條106b的個數為3個進行示意性說明,實際上所述輻條106b的個數不做限定。
所述輻條106b設於所述遮蓋環104的周邊,且所述輻條106b設於移動塊105下方,這樣所述驅動裝置在驅動承載環106向上運動時,所述輻條106b與移動塊105的接觸面積較大,所述輻條106b能夠支撐所述移動塊105。由於移動塊105頂升力受力點位於端部,並不居中,為了防止頂升時,移動塊105產生轉矩發生偏轉。通過輻條106b增大與移動塊105之間的接觸面積,使得移動塊105受力方向垂直向上,以免與遮蓋環104的凹槽壁發生刮擦或者卡頓。
並且,如此設計所述遮擋環106,可使所述環部106a的寬度較小。由於所述環部106a的寬度較小,使得所述環部106a對下方等離子體約束裝置的遮擋較少,則所述真空泵108抽出反應腔10內氣體較順暢。另外,所述環部106a的寬度較小,使得所述遮擋環106的重量較輕,使升舉聚焦環103較容易。
當所述聚焦環103被抬起到一定高度後,由於所述移動塊105位於所述承載環106上方,且相鄰的移動塊105之間相互分離,即:相鄰移動塊105之間的間隙能夠允許機械手裝置進入其中以取出不再滿足製程要求的聚焦環103,以更換新的聚焦環103。該取出聚焦環103的過程無需打開反應腔10,使反應腔10內的真空環境不被破壞,則更換新的聚焦環103之後,無需調整反應腔10內的真空度,而可以直接進行下一步的製程,因此,有利於提高等離子體處理裝置的工作效率。
圖6為圖2下電極元件中聚焦環被頂起時的結構示意圖。
利用氣缸108驅動所述驅動桿107,所述驅動感107頂起承載環106,所述承載環106帶動移動塊105和聚焦環103向上移動,當所述聚焦環103、移動塊105和承載環106移動至一定高度後,利用機械手裝置130穿過相鄰移動塊105之間的間隙,置於所述聚焦環103的下方,以取出不滿足製程要求的所述聚焦環103。後續再利用所述機械手裝置130將一新的聚焦環103置於所述移動塊105的臺階105a上,所述氣缸108驅動所述驅動桿107向下運動,使所述聚焦環103環繞待處理基片W的周邊,以進行下一步的製程,這樣在待處理基片W表面進行蝕刻的均勻性較好。
圖7是本發明另一種下電極元件的結構示意圖;圖8是圖7下電極元件的俯視圖,圖7是圖8沿B-B1線的剖面結構示意圖。
請參考圖7和圖8,下電極元件20包括:基座201;位於基座201上的靜電夾盤202,用於承載待處理基片W;聚焦環203,環繞於所述基座201的周邊;遮蓋環204,設於所述聚焦環203下方,沿其周向設有複數個凹槽;移動塊205,設於所述凹槽內,其內側頂角設有臺階,所述臺階用於支撐部分聚焦環203;驅動裝置,與所述移動塊205連接,用於驅動所述移動塊帶動聚焦環203上下移動。
在本實施例中,所述驅動裝置為氣缸驅動裝置,具體包括:氣缸208和驅動桿207。在其他實施例中,所述驅動裝置為電驅動裝置。
在本實施例中,所述氣缸208驅動所述驅動桿207,頂起所述移動塊205,所述移動塊205帶動聚焦環203向上運動,由於相鄰移動塊205之間具有間隙,使機械手裝置能夠通過其中將聚焦環203取出,以更換不滿足製程要求的聚焦環203。該取出聚焦環203的過程無需打開反應腔,使反應腔內的真空環境不被破壞,則更換新的聚焦環203之後,無需調整反應腔內的真空度,而可以直接進行下一步的製程,因此,有利於提高等離子體處理裝置的工作效率。
相應的,本發明提供一種更換聚焦環的方法,具體請參考圖9。
請參考圖9,步驟S1:提供上述下電極元件;步驟S2:利用所述驅動裝置,使移動塊向上移動帶動聚焦環向上移動;步驟S3:當所述聚焦環被抬起後,利用機械手裝置取下所述聚焦環。
利用圖9所示的方法取出不符合製程要求的聚焦環時無需打開反應腔的頂蓋,使反應腔內的真空環境不被破壞,有利於提高工作效率。
更換聚焦環的方法還包括:提供一新的聚焦環;將所述新的聚焦環至於所述移動塊的臺階上;將所述新的聚焦環置於所述移動塊的臺階上之後,利用驅動裝置帶動移動塊和聚焦環向下移動,直至所述待處理基片置於基座的表面,從而實現聚焦環的更換。
雖然本發明披露如上,但本發明並非限定於此。任何本發明所屬技術領域中具有通常知識者,在不脫離。本發明的精神和範圍內,均可作各種更動與修改,因此本發明的保護範圍應當以申請專利範圍所限定的範圍為原則。
1:等離子體處理裝置
10:反應腔
101、201:基座
102、202:靜電夾盤
103、203:聚焦環
104、204:遮蓋環
104a:凹槽
105、205:移動塊
105a:臺階
106:承載環
106a:環部
106b:輻條
107、207:驅動桿
108、208:氣缸
11、20:下電極元件
110:連接件
12:絕緣窗口
13:電感線圈
130:機械手裝置
14:氣體輸送裝置
15:射頻功率源
16:偏置射頻功率源
17:射頻匹配網路
18:真空泵
W:基片
S1~S3:步驟
圖1為本發明一種等離子體處理裝置的結構示意圖;
圖2為本發明一種下電極元件的結構示意圖;
圖3是本發明一種遮蓋環的俯視圖;
圖4是本發明圖2下電極元件的俯視圖;
圖5是圖2一種承載環的俯視示意圖;圖6是圖2下電極元件中聚焦環被升起時的結構示意圖;
圖7是本發明另一種下電極元件的結構示意圖;
圖8是圖7下電極元件的俯視示意圖;以及
圖9為本發明一種更換聚焦環的方法流程圖。
104:遮蓋環
104a:凹槽
Claims (19)
- 一種用於等離子體處理裝置的下電極元件,其中,包括:一基座,用於承載待處理的一基片;一聚焦環,環繞於該基座的周邊;一遮蓋環,設於該聚焦環的周邊,沿其周向設有複數個凹槽;一移動塊,設於該凹槽內,其內側設有一臺階,該臺階用於支撐部分的該聚焦環;以及一驅動裝置,與該移動塊連接,用於驅動該移動塊帶動該聚焦環上下移動;該移動塊相對於該遮蓋環的外側壁向外凸出,該驅動裝置與凸出的該移動塊連接。
- 如請求項1所述的下電極元件,其中,該移動塊的材料為陶瓷材料。
- 如請求項1所述的下電極元件,其中,該驅動裝置為氣缸驅動裝置或者電驅動裝置。
- 如請求項3所述的下電極元件,其中,該驅動裝置為氣缸驅動裝置時,該驅動裝置包括一氣缸和一驅動桿,該驅動桿與該移動塊連接。
- 如請求項4所述的下電極元件,其中,還包括:一等離子體約束裝置,位於該遮蓋環的下方,該驅動桿穿過該等離子體約束裝置;一接地環,位於該遮蓋環的下方,包圍該基座,與該氣缸連接。
- 如請求項1所述的下電極元件,其中,該凹槽的個數為3個及3個以上。
- 如請求項1所述的下電極元件,其中,還包括:一承載環,該承載環包括一環部和朝向該環部的圓心設置的複數個輻條,該輻條設於該移動塊的下方,該環部的直徑大於該遮蓋環的直徑;該驅動裝置與該承載 環連接,驅動該承載環上下運動,帶動該移動塊和該聚焦環上下移動。
- 如請求項7所述的下電極元件,其中,該承載環與該移動塊之間可拆卸連接。
- 如請求項8所述的下電極元件,其中,該承載環與該移動塊之間通過螺絲連接。
- 如請求項7所述的下電極元件,其中,該承載環的材料為陶瓷材料。
- 如請求項7所述的下電極元件,其中,該承載環為環狀結構,該承載環設於該移動塊的下方。
- 如請求項1所述的下電極元件,其中,還包括:一機械手裝置,當該聚焦環被該驅動裝置抬起後,用於取出該聚焦環,或者用於將該聚焦環至於該基座的周邊。
- 如請求項1所述的下電極元件,其中,所該臺階位於該移動塊的內側的頂角。
- 一種等離子體處理裝置,其中,包括:一反應腔;以及一如請求項1至請求項13任一項所述的下電極元件,置於該反應腔內。
- 如請求項14所述的等離子體處理裝置,其中,還包括:一氣體噴淋頭,位於該反應腔的頂部,與該下電極相對設置,用於向該反應腔內輸送反應氣體。
- 如請求項14所述的等離子體處理裝置,其中,還包括:一絕緣窗口,位於該反應腔的頂部;一電感線圈,位於該絕緣窗口上;一氣體輸送裝置,用於向該反應腔內輸送反應氣體。
- 如請求項15或16所述的等離子體處理裝置,其中,還包括:一真空泵,用於使該反應腔內為真空環境。
- 一種更換聚焦環的方法,其中,包括下列步驟:提供一如請求項12所述的下電極元件;利用該驅動裝置,使該移動塊向上移動帶動該聚焦環向上移動;以及當該聚焦環被抬起後,利用該機械手裝置取下該聚焦環。
- 如請求項18所述的更換聚焦環的方法,其中,還包括下列步驟:提供新的該聚焦環;將新的該聚焦環置於該移動塊的該臺階上;將新的該聚焦環置於該移動塊的該臺階上之後,利用該驅動裝置帶動該移動塊和該聚焦環向下移動,直至待處理的該基片置於該基座的表面。
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US20180061619A1 (en) * | 2016-09-01 | 2018-03-01 | Tokyo Electron Limited | Plasma processing apparatus |
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US20180061619A1 (en) * | 2016-09-01 | 2018-03-01 | Tokyo Electron Limited | Plasma processing apparatus |
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