TWI817174B - Plasma treatment device and plasma treatment method - Google Patents
Plasma treatment device and plasma treatment method Download PDFInfo
- Publication number
- TWI817174B TWI817174B TW110129054A TW110129054A TWI817174B TW I817174 B TWI817174 B TW I817174B TW 110129054 A TW110129054 A TW 110129054A TW 110129054 A TW110129054 A TW 110129054A TW I817174 B TWI817174 B TW I817174B
- Authority
- TW
- Taiwan
- Prior art keywords
- upper electrode
- electrode element
- movable upper
- reaction chamber
- gas
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000009832 plasma treatment Methods 0.000 title description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 90
- 238000012545 processing Methods 0.000 claims abstract description 44
- 238000007789 sealing Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 26
- 238000003672 processing method Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 74
- 210000002381 plasma Anatomy 0.000 description 56
- 238000009413 insulation Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Treatment Of Fiber Materials (AREA)
Abstract
本發明公開了一種等離子體處理裝置及其等離子體處理方法，該裝置包含：真空反應腔，其內具有下電極元件和可移動上電極元件；複數個升降裝置與可移動上電極元件連接以使其升降，升降裝置包含支撐柱和驅動裝置，驅動裝置用於驅動支撐柱以使可移動上電極元件升降；複數個氣體通道，分別由真空反應腔外部延伸經過真空反應腔底部、支撐柱內部、可移動上電極元件以將製程氣體注入真空反應腔內；複數個導電可伸縮的密封結構，分別設置於支撐柱內且環繞氣體通道的周圍。其優點是：將升降裝置、氣體通道和密封結構相結合，真空反應腔頂部多次開關也不會影響可移動上電極元件，更容易保持所述可移動上電極元件和待處理晶圓、下電極元件之間的同心度，保證了斜邊蝕刻的製程效果。 The invention discloses a plasma processing device and a plasma processing method thereof. The device includes: a vacuum reaction chamber, which has a lower electrode element and a movable upper electrode element; a plurality of lifting devices are connected to the movable upper electrode element to enable Its lifting and lowering device includes a support column and a driving device. The driving device is used to drive the support column to lift the movable upper electrode element; a plurality of gas channels respectively extend from the outside of the vacuum reaction chamber through the bottom of the vacuum reaction chamber, the inside of the support column, The upper electrode element is movable to inject process gas into the vacuum reaction chamber; a plurality of conductive and retractable sealing structures are respectively arranged in the support column and surround the gas channel. The advantage is that by combining the lifting device, the gas channel and the sealing structure, multiple switches on the top of the vacuum reaction chamber will not affect the movable upper electrode element, and it is easier to keep the movable upper electrode element and the wafer to be processed and the lower The concentricity between electrode elements ensures the process effect of bevel edge etching.
Description
本發明涉及半導體設備的技術領域，具體涉及一種等離子體處理裝置及其等離子體處理方法。 The present invention relates to the technical field of semiconductor equipment, and in particular to a plasma processing device and a plasma processing method thereof.
在晶圓處理過程中，往往通過等離子(又稱電漿)氣體來對晶圓或沉積在晶圓上的膜進行蝕刻。整個製程過程中，等離子體處理裝置的上電極元件和晶圓的對中性對晶圓的蝕刻效果影響巨大。 During wafer processing, plasma (also known as plasma) gas is often used to etch the wafer or the film deposited on the wafer. During the entire process, the alignment between the upper electrode component of the plasma processing device and the wafer has a huge impact on the etching effect of the wafer.
習知的等離子體處理裝置中較多為可移動上電極元件設計，其廣泛應用於晶圓蝕刻尤其是晶圓邊緣蝕刻(wafer edge etching)領域。在傳送晶圓進出真空反應腔時，上電極元件抬起；對晶圓進行處理時，上電極元件下降並與晶圓之間留下微小的間距。因此，上電極元件在下降到晶圓附近時，需要與晶圓、下電極元件保持極高的同心度，使得晶圓邊緣暴露在等離子體中的部分在圓周方向對稱，才能得到均勻的蝕刻，以保證斜邊蝕刻(bevel etch)的效果。 Most of the conventional plasma processing devices are designed with movable upper electrode elements, which are widely used in the field of wafer etching, especially wafer edge etching. When the wafer is transported in and out of the vacuum reaction chamber, the upper electrode element is lifted; when the wafer is processed, the upper electrode element is lowered and leaves a slight gap between the wafer and the wafer. Therefore, when the upper electrode component is lowered to the vicinity of the wafer, it needs to maintain extremely high concentricity with the wafer and the lower electrode component, so that the part of the edge of the wafer exposed to the plasma is symmetrical in the circumferential direction to obtain uniform etching. To ensure the effect of bevel etch.
在等離子體處理裝置中上電極元件通常與真空反應腔的腔體端蓋連接，日常運維工作時，需要經常打開腔體端蓋對腔內結構進行調整，腔體端蓋每次翻轉開關後都需要重新對其進行對中調整以及與上電極元件的聯動，以使上電極元件與晶圓保持較高的同心度，但其花費時間較久可能會影響等離子體處理裝置的工作時長。另外，腔體端蓋多次翻轉開關後與之連接的上電極元件可能會發生偏移，即使腔體端蓋完成對中調整後，晶圓邊緣蝕刻區域也會出現偏差，影響蝕刻效果。 In plasma processing devices, the upper electrode element is usually connected to the chamber end cover of the vacuum reaction chamber. During daily operation and maintenance, it is necessary to frequently open the chamber end cover to adjust the structure of the chamber. Each time the chamber end cover flips the switch, It is necessary to re-center and adjust it and link it with the upper electrode element to maintain a high concentricity between the upper electrode element and the wafer, but it takes a long time and may affect the working time of the plasma processing device. In addition, the upper electrode component connected to the cavity end cover may shift after the switch is flipped multiple times. Even after the cavity end cover is aligned and adjusted, the etching area on the edge of the wafer will deviate, affecting the etching effect.
本發明的目的在於提供一種等離子體處理裝置及其等離子體處理方法，該等離子體處理裝置通過升降裝置實現可移動上電極元件的支撐與升降，使可移動上電極元件的氣體通道經由升降裝置的支撐柱將製程氣體輸送至真空反應腔，並設置有密封結構保證真空反應腔的氣體環境，所述可移動上電極元件與真空反應腔的頂部無連接，使得在裝置使用過程中更容易保持所述可移動上電極元件、待處理晶圓和下電極元件之間的同心度，保證了斜邊蝕刻的製程效果，也減少了工作人員精力與時間的損耗，有利於晶圓蝕刻製程的開展。 The object of the present invention is to provide a plasma processing device and a plasma processing method thereof. The plasma processing device realizes the support and lifting of the movable upper electrode element through a lifting device, so that the gas channel of the movable upper electrode element passes through the lifting device. The support column transports the process gas to the vacuum reaction chamber, and is provided with a sealing structure to ensure the gas environment of the vacuum reaction chamber. The movable upper electrode element is not connected to the top of the vacuum reaction chamber, making it easier to maintain the required position during use of the device. The concentricity between the above-mentioned movable upper electrode element, the wafer to be processed and the lower electrode element ensures the process effect of bevel edge etching, and also reduces the loss of staff's energy and time, which is conducive to the development of the wafer etching process.
為了達到上述目的，本發明通過以下技術方案實現：一種等離子體處理裝置，包含：真空反應腔，所述真空反應腔內具有下電極元件和可移動上電極元件，所述下電極元件設置有承載面，用於承載待處理晶圓；複數個升降裝置，與所述可移動上電極元件連接以使所述可移動上電極元件升降，所述升降裝置包含支撐柱和驅動裝置，所述支撐柱的一端與所述可移動上電極元件連接，所述支撐柱的另一端與所述驅動裝置連接，所述驅動裝置用於驅動所述支撐柱以使得所述可移動上電極元件升降；複數個氣體通道，分別由所述真空反應腔的外部延伸經過所述真空反應腔的底部、所述支撐柱的內部、所述可移動上電極元件，所述氣體通道用於將製程氣體注入所述真空反應腔內；複數個導電可伸縮的密封結構，分別設置於所述支撐柱內，所述密封結構環繞設置於所述氣體通道的周圍，所述密封結構的一端與所述可移動上電極元件的底部連接，所述密封結構的另一端與所述真空反應腔的底部連接。 In order to achieve the above objects, the present invention is realized through the following technical solutions: a plasma processing device, including: a vacuum reaction chamber, the vacuum reaction chamber has a lower electrode element and a movable upper electrode element, the lower electrode element is provided with a bearing surface, used to carry the wafer to be processed; a plurality of lifting devices connected to the movable upper electrode element to lift the movable upper electrode element, the lifting device includes a support column and a driving device, the support column One end of the support column is connected to the movable upper electrode element, and the other end of the support column is connected to the driving device. The driving device is used to drive the support column to make the movable upper electrode element rise and fall; a plurality of Gas channels extend from the outside of the vacuum reaction chamber through the bottom of the vacuum reaction chamber, the inside of the support column, and the movable upper electrode element. The gas channels are used to inject process gas into the vacuum. In the reaction chamber; a plurality of conductive and retractable sealing structures are respectively arranged in the support column. The sealing structures are arranged around the gas channel. One end of the sealing structure is connected to the movable upper electrode element. The other end of the sealing structure is connected to the bottom of the vacuum reaction chamber.
較佳的，所述真空反應腔的底部開設有複數個凹槽結構，所述驅動裝置驅動所述支撐柱升降以帶動所述可移動上電極元件升降，所述可 移動上電極元件處於低位元時所述支撐柱的底部位於所述凹槽結構內，以使所述可移動上電極元件和待處理晶圓的中心對齊。 Preferably, the bottom of the vacuum reaction chamber is provided with a plurality of groove structures, and the driving device drives the support column to rise and fall to drive the movable upper electrode element to rise and fall. When the movable upper electrode element is in a low position, the bottom of the support pillar is located in the groove structure, so that the movable upper electrode element is aligned with the center of the wafer to be processed.
較佳的，所述可移動上電極元件包含：絕緣隔離部，設置於所述可移動上電極元件的底部，與待處理晶圓的中央區域相對設置；上電極環，環繞設置於所述絕緣隔離部的外側，所述上電極環與待處理晶圓的邊緣區域相對設置；所述下電極元件包含：下電極環，環繞設置於待處理晶圓的邊緣區域，所述下電極環和所述上電極環相對設置。 Preferably, the movable upper electrode element includes: an insulating isolation portion disposed at the bottom of the movable upper electrode element and opposite to the central area of the wafer to be processed; an upper electrode ring surrounding the insulating Outside the isolation part, the upper electrode ring is arranged opposite to the edge area of the wafer to be processed; the lower electrode element includes: a lower electrode ring, which is arranged around the edge area of the wafer to be processed, and the lower electrode ring and the The above-mentioned electrode rings are arranged oppositely.
較佳的，所述氣體通道為邊緣進氣通道或中央進氣通道，所述邊緣進氣通道包含邊緣噴淋口以將第一氣體注入待處理晶圓的邊緣區域的上方，所述中央進氣通道包含中央噴淋口以將第二氣體注入待處理晶圓的中央區域的上方。 Preferably, the gas channel is an edge gas inlet channel or a central gas inlet channel, the edge gas inlet channel includes an edge spray port to inject the first gas above the edge area of the wafer to be processed, and the central gas inlet channel The gas channel includes a central spray port to inject the second gas over a central area of the wafer to be processed.
較佳的，所述邊緣進氣通道內的第一氣體包括含F、Cl的蝕刻氣體和/或清潔氣體；所述中央進氣通道內的第二氣體包括清潔氣體和/或緩衝氣體。 Preferably, the first gas in the edge air inlet channel includes etching gas containing F and Cl and/or cleaning gas; the second gas in the central air inlet channel includes cleaning gas and/or buffer gas.
較佳的，所述邊緣進氣通道在所述可移動上電極元件內採用多路徑分佈結構，其包含多個邊緣噴淋口，所述邊緣噴淋口沿所述待處理晶圓的邊緣區域均勻分佈，以便將第一氣體均勻注入待處理晶圓的邊緣區域。 Preferably, the edge air inlet channel adopts a multi-path distribution structure in the movable upper electrode element, which includes a plurality of edge spray openings, and the edge spray openings are along the edge area of the wafer to be processed. Distribute evenly so that the first gas is evenly injected into the edge area of the wafer to be processed.
較佳的，所述氣體通道內表面設有耐腐蝕性材料的鍍層。 Preferably, the inner surface of the gas channel is provided with a coating of corrosion-resistant material.
較佳的，所述升降裝置、所述氣體通道和所述密封結構均為三個，各個所述升降裝置沿所述可移動上電極元件周向均勻分佈，各個所述氣體通道分別穿過各個所述升降裝置的支撐柱的內部，各個所述密封結構分別包圍在各個所述氣體通道周圍。 Preferably, there are three lifting devices, gas channels and sealing structures, each of the lifting devices is evenly distributed along the circumferential direction of the movable upper electrode element, and each of the gas channels passes through each Inside the support column of the lifting device, each of the sealing structures surrounds each of the gas channels.
較佳的，所述支撐柱為陶瓷空心柱；和/或，所述驅動裝置為步進馬達或氣缸；和/或，所述密封結構為金屬波紋管；和/或，所述密封結構包含波紋管和金屬件，所述波紋管的一端與所述可移動上電極元件的底部連接，所述波紋管的另一端與所述真空反應腔的底部連接，所述金屬件的一端與所述可移動上電極元件的底部連接，所述金屬件的另一端與所述真空反應腔的底部連接。 Preferably, the support column is a ceramic hollow column; and/or the driving device is a stepper motor or a cylinder; and/or the sealing structure is a metal bellows; and/or the sealing structure includes A bellows and a metal piece, one end of the bellows is connected to the bottom of the movable upper electrode element, the other end of the bellows is connected to the bottom of the vacuum reaction chamber, one end of the metal piece is connected to the The bottom of the movable upper electrode element is connected, and the other end of the metal piece is connected to the bottom of the vacuum reaction chamber.
較佳的，所述真空反應腔的頂部為腔體端蓋，所述腔體端蓋由透明材料製成，複數個光學處理裝置設置於所述真空反應腔的上方以監控所述可移動上電極元件的同心度。 Preferably, the top of the vacuum reaction chamber is a cavity end cover, the cavity end cover is made of transparent material, and a plurality of optical processing devices are disposed above the vacuum reaction chamber to monitor the movable upper surface. Concentricity of electrode elements.
較佳的，所述真空反應腔的頂部為腔體端蓋，所述腔體端蓋設置有金屬遮罩網結構。 Preferably, the top of the vacuum reaction chamber is a cavity end cover, and the cavity end cover is provided with a metal shielding mesh structure.
較佳的，所述可移動上電極元件的邊緣側面和所述真空反應腔的側壁之間的距離小於1cm。 Preferably, the distance between the edge side of the movable upper electrode element and the side wall of the vacuum reaction chamber is less than 1 cm.
較佳的，一種等離子體處理方法，包含下列步驟：提供上述的等離子體處理裝置；由氣體通道將製程氣體注入真空反應腔內；採用驅動裝置驅動支撐柱使可移動上電極元件升降，以便在可移動上電極元件和下電極元件之間產生等離子體環境進行待處理晶圓的邊緣區域的蝕刻。 Preferably, a plasma processing method includes the following steps: providing the above-mentioned plasma processing device; injecting process gas into the vacuum reaction chamber through the gas channel; using a driving device to drive the support column to raise and lower the movable upper electrode element so as to A plasma environment is generated between the movable upper electrode element and the lower electrode element to etch the edge area of the wafer to be processed.
本發明與習知技術相比具有以下優點：本發明提供的等離子體處理裝置及其等離子體處理方法中，該等離子體處理裝置通過升降裝置實現可移動上電極元件的支撐與升降，使可移動上電極元件的氣體通道經由升降裝置的支撐柱將製程氣體輸送至真空反應腔，並設置有密封結構以保證真空反應腔的氣體環境，所述可移動上電極元件與真空反應腔的頂部無連接，真空反應腔的頂部多次開關也不 會影響可移動上電極元件，使得在裝置使用過程中更容易保持所述可移動上電極元件和待處理晶圓、下電極元件之間的同心度，保證了斜邊蝕刻的製程效果，也減少了工作人員精力與時間的損耗，有利於晶圓蝕刻製程的開展。 Compared with the conventional technology, the present invention has the following advantages: In the plasma processing device and the plasma processing method provided by the present invention, the plasma processing device realizes the support and lifting of the movable upper electrode element through a lifting device, so that the movable upper electrode element can be supported and lowered. The gas channel of the upper electrode element transports the process gas to the vacuum reaction chamber through the support column of the lifting device, and is provided with a sealing structure to ensure the gas environment of the vacuum reaction chamber. The movable upper electrode element has no connection with the top of the vacuum reaction chamber , the top of the vacuum reaction chamber cannot be opened and closed multiple times. It will affect the movable upper electrode element, making it easier to maintain the concentricity between the movable upper electrode element, the wafer to be processed, and the lower electrode element during use of the device, ensuring the process effect of bevel edge etching, and also reducing It reduces the loss of staff energy and time and is conducive to the development of the wafer etching process.
進一步的，其密封結構設置在支撐柱的內部，使密封結構免受等離子體環境的干擾，避免了發生點火現象。 Furthermore, the sealing structure is arranged inside the support column to protect the sealing structure from interference from the plasma environment and avoid ignition.
進一步的，其真空反應腔的底部開設有凹槽結構，只需在可移動上電極元件處於低位元時將支撐柱卡進凹槽結構內，即可保證可移動上電極元件、待處理晶圓和下電極元件之間的同心度。 Furthermore, a groove structure is provided at the bottom of the vacuum reaction chamber. When the movable upper electrode element is in a low position, the support column is inserted into the groove structure to ensure that the movable upper electrode element and the wafer to be processed and concentricity between the lower electrode elements.
100:真空反應腔 100: Vacuum reaction chamber
101:反應腔腔體 101:Reaction chamber cavity
102:腔體端蓋 102: Cavity end cover
103:凹槽結構 103: Groove structure
104:金屬遮罩網結構 104: Metal masking mesh structure
110:下電極元件 110: Lower electrode component
111:下電極環 111: Lower electrode ring
112:絕緣環 112:Insulation ring
113:等離子體約束元件 113:Plasma confinement element
120:可移動上電極元件 120: Movable upper electrode element
121:絕緣隔離部 121: Insulation isolation part
122:上電極環 122: Upper electrode ring
130:射頻電源 130:RF power supply
140:支撑柱 140:Support column
141:密封件 141:Seals
150:氣體通道 150:Gas channel
151:邊緣進氣通道 151: Edge air intake channel
152:中央進氣通道 152:Central air intake channel
160:密封結構 160:Sealed structure
170:驅動裝置 170:Driving device
W:待處理晶圓 W: Wafer to be processed
為了更清楚地說明本發明技術方案，下面將對描述中所需要使用的附圖作簡單地介紹，顯而易見地，下面描述中的附圖是本發明的一個實施例，對於本領域具有通常知識者來講，在不付出具進步性改變的前提下，還可以根據這些附圖獲得其他的附圖：圖1為本發明的一種等離子體處理裝置；以及圖2為本發明的另一種等離子體處理裝置。 In order to explain the technical solution of the present invention more clearly, the drawings required for the description will be briefly introduced below. Obviously, the drawings in the following description are an embodiment of the present invention. For those with ordinary knowledge in the art, Generally speaking, without making any progressive changes, other drawings can also be obtained based on these drawings: Figure 1 is a plasma treatment device of the present invention; and Figure 2 is another plasma treatment device of the present invention. device.
為使本發明實施例的目的、技術方案和優點更加清楚，下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述，顯然，所描述的實施例是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域具有通常知識者在沒有做出具進步性改變前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。 In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary skill in the art without making any progressive changes shall fall within the scope of protection of the present invention.
需要說明的是，在本文中，術語“包括”、“包含”、“具有”或者其任何其他變體意在涵蓋非排他性的包含，從而使得包括一系列要素的過程、方法、物品或者終端設備不僅包括那些要素，而且還包括沒有明確 列出的其他要素，或者是還包括為這種過程、方法、物品或者終端設備所固有的要素。在沒有更多限制的情況下，由語句“包括......”或“包含......”限定的要素，並不排除在包括所述要素的過程、方法、物品或者終端設備中還存在另外的要素。 It should be noted that, in this article, the terms "include", "comprises", "having" or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article or terminal device including a series of elements Not only those elements, but also the lack of explicit Other elements listed may also include elements inherent to such process, method, article or terminal equipment. Without further limitation, an element qualified by the statement "includes..." or "includes..." does not exclude the inclusion of said element in a process, method, article, or terminal. There are additional elements present in the equipment.
需說明的是，附圖均採用非常簡化的形式且均使用非精準的比例，僅用以方便、明晰地輔助說明本發明一實施例的目的。 It should be noted that the drawings are in a very simplified form and use imprecise proportions, and are only used to conveniently and clearly assist in explaining an embodiment of the present invention.
如圖1所示，其為本發明的一種等離子體處理裝置，該等離子體處理裝置包含：一真空反應腔100，其由反應腔腔體101和腔體端蓋102包圍而成，所述反應腔腔體101上設置一晶圓傳輸口(圖中未示出)，該晶圓傳輸口用於實現待處理晶圓W在真空反應腔100內外之間傳輸。所述真空反應腔100內包含一下電極元件110，其設置於所述真空反應腔100內底部，所述下電極元件110設置有承載面，傳入所述真空反應腔100內的待處理晶圓W放置在所述承載面上。所述真空反應腔100內還包含與所述下電極元件110相對設置的可移動上電極元件120，至少一射頻電源130通過匹配網路施加到所述下電極元件110，以將製程氣體解離為等離子體，使所述可移動上電極元件120和所述下電極元件110的邊緣區域之間為等離子體環境，該等離子體環境中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子，上述活性粒子可以和待處理晶圓W的表面發生多種物理和/或化學反應，使得待處理晶圓W的邊緣的形貌發生改變，從而完成對待處理晶圓W的邊緣處理。 As shown in Figure 1, it is a plasma processing device of the present invention. The plasma processing device includes: a vacuum reaction chamber 100, which is surrounded by a reaction chamber body 101 and a chamber end cover 102. A wafer transfer port (not shown in the figure) is provided on the chamber body 101, and the wafer transfer port is used to transfer the wafer W to be processed between the inside and outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a lower electrode element 110, which is disposed at the bottom of the vacuum reaction chamber 100. The lower electrode element 110 is provided with a bearing surface for transferring the wafer to be processed into the vacuum reaction chamber 100. W is placed on the bearing surface. The vacuum reaction chamber 100 also includes a movable upper electrode element 120 opposite to the lower electrode element 110. At least one radio frequency power supply 130 is applied to the lower electrode element 110 through a matching network to dissociate the process gas into Plasma, so that the edge area between the movable upper electrode element 120 and the lower electrode element 110 is a plasma environment. This plasma environment contains a large number of electrons, ions, excited atoms, molecules and free radicals. Such active particles can undergo various physical and/or chemical reactions with the surface of the wafer W to be processed, causing the morphology of the edge of the wafer W to be processed to change, thereby completing the edge treatment of the wafer W to be processed.
在本實施例中，所述等離子體處理裝置適用於待處理晶圓W的邊緣蝕刻領域。在待處理晶圓W經等離子體蝕刻加工出設計圖案的過程中，待處理晶圓W的外邊緣區域及背面的外邊緣區域會堆積一些多餘膜層，如多晶矽層、氮化物層、金屬層等，而這些多餘膜層可能會對後續製程和設備造成污染，因此需要通過斜邊蝕刻製程將其去除。 In this embodiment, the plasma processing device is suitable for the edge etching field of the wafer W to be processed. During the process of plasma etching to produce the design pattern on the wafer W to be processed, some excess film layers, such as polycrystalline silicon layers, nitride layers, and metal layers, will accumulate on the outer edge areas of the wafer W to be processed and the outer edge areas of the back surface. etc., and these excess film layers may cause contamination to subsequent processes and equipment, so they need to be removed through a bevel etching process.
如圖1所示，為本實施例中的一種處理晶圓邊緣的等離子體處理裝置，其包含複數個升降裝置，各個所述升降裝置與所述可移動上電極元件120連接以使所述可移動上電極元件120升降。 As shown in FIG. 1 , it is a plasma processing device for processing a wafer edge in this embodiment, which includes a plurality of lifting devices. Each of the lifting devices is connected to the movable upper electrode element 120 to enable the movable upper electrode element 120 to move. The moving upper electrode element 120 is raised and lowered.
具體地，所述升降裝置包含支撐柱140和驅動裝置170，所述支撐柱140的一端與所述可移動上電極元件120連接，所述支撐柱140的另一端通過一傳遞元件與所述驅動裝置170連接，所述傳遞元件傳遞所述驅動裝置170的驅動力，所述驅動裝置170驅動所述傳遞組件進而驅動所述支撐柱140以使得所述可移動上電極元件120升降。 Specifically, the lifting device includes a support column 140 and a driving device 170. One end of the support column 140 is connected to the movable upper electrode element 120, and the other end of the support column 140 is connected to the drive device through a transmission element. The device 170 is connected, and the transmission element transmits the driving force of the driving device 170 . The driving device 170 drives the transmission assembly and then drives the support column 140 to make the movable upper electrode element 120 rise and fall.
較佳的，所述支撐柱140為空心結構，以便容納其餘部件。在本實施例中，所述支撐柱140為陶瓷空心柱。所述驅動裝置170設置於所述真空反應腔100的外部，所述傳遞元件與各個部件的連接處均設置有複數個密封件141(如波紋管)以保護所述真空反應腔100內的氣體環境。較佳的，所述驅動裝置170為步進馬達或氣缸，當然，所述驅動結構的類型與結構不僅限於上述兩種，其還可以為其他的類型或結構，只要其可實現對所述支撐柱140的驅動完成所述支撐柱140的升降即可。 Preferably, the support column 140 is a hollow structure to accommodate other components. In this embodiment, the support column 140 is a ceramic hollow column. The driving device 170 is disposed outside the vacuum reaction chamber 100 , and a plurality of seals 141 (such as bellows) are provided at the connections between the transmission element and each component to protect the gas in the vacuum reaction chamber 100 environment. Preferably, the driving device 170 is a stepper motor or a cylinder. Of course, the type and structure of the driving structure are not limited to the two mentioned above. It can also be other types or structures, as long as it can achieve the support of the The driving of the column 140 is sufficient to complete the lifting and lowering of the support column 140 .
所述可移動上電極元件120內包含複數個氣體通道150，各個所述氣體通道150分別由所述真空反應腔100的外部延伸經過所述真空反應腔100的底部、所述支撐柱140的內部、所述可移動上電極元件120，所述氣體通道150用於將複數種製程氣體注入所述真空反應腔100內。進一步的，所述氣體通道150內表面設有耐等離子體腐蝕性的鍍層，以保護所述氣體通道150的內表面，避免其發生顆粒脫落進而污染所述真空反應腔100的腔體環境。較佳的，所述耐等離子體腐蝕的鍍層材料為特氟龍鍍層或氧化釔膜層或陽極氧化鋁層。 The movable upper electrode element 120 includes a plurality of gas channels 150 . Each of the gas channels 150 extends from the outside of the vacuum reaction chamber 100 through the bottom of the vacuum reaction chamber 100 and the inside of the support column 140 . , the movable upper electrode element 120, and the gas channel 150 is used to inject a plurality of process gases into the vacuum reaction chamber 100. Furthermore, the inner surface of the gas channel 150 is provided with a plasma corrosion-resistant coating to protect the inner surface of the gas channel 150 and prevent particles from falling off and thereby contaminating the cavity environment of the vacuum reaction chamber 100 . Preferably, the plasma corrosion-resistant coating material is a Teflon coating, an yttrium oxide film layer, or an anodized aluminum layer.
另外，該等離子體處理裝置還包含複數個導電可伸縮的密封結構160，各個所述密封結構160分別設置於所述支撐柱140內，所述密封結構160環繞設置於所述氣體通道150的周圍，所述密封結構160的一端與 所述可移動上電極元件120的底部連接，所述密封結構160的另一端與所述真空反應腔100的底部連接以保護所述真空反應腔100的氣體環境以及實現所述可移動上電極元件120的接地。在本實施例中，所述密封結構160為金屬波紋管，其結構簡單，安裝方便，可較好地保護所述真空反應腔100內的氣體環境以及實現所述可移動上電極元件120的接地。 In addition, the plasma processing device also includes a plurality of conductive and retractable sealing structures 160. Each of the sealing structures 160 is respectively disposed in the support column 140. The sealing structure 160 is disposed around the gas channel 150. , one end of the sealing structure 160 and The bottom of the movable upper electrode element 120 is connected, and the other end of the sealing structure 160 is connected to the bottom of the vacuum reaction chamber 100 to protect the gas environment of the vacuum reaction chamber 100 and realize the movable upper electrode element. 120 to ground. In this embodiment, the sealing structure 160 is a metal bellows, which has a simple structure and is easy to install. It can better protect the gas environment in the vacuum reaction chamber 100 and realize the grounding of the movable upper electrode element 120 .
當然，所述密封結構160的組成與結構不僅限於此，只要其可實現所述真空反應腔100的密封以及可移動上電極元件120的接地即可。例如，在另一實施例中，所述密封結構160包含普通材料製備的波紋管和金屬件，所述波紋管的一端與所述可移動上電極元件120的底部連接，所述波紋管的另一端與所述真空反應腔100的底部連接，所述金屬件的一端與所述可移動上電極元件120的底部連接，所述金屬件的另一端與所述真空反應腔100的底部連接。 Of course, the composition and structure of the sealing structure 160 are not limited to this, as long as it can achieve sealing of the vacuum reaction chamber 100 and grounding of the movable upper electrode element 120 . For example, in another embodiment, the sealing structure 160 includes a bellows made of common materials and a metal piece. One end of the bellows is connected to the bottom of the movable upper electrode element 120 , and the other end of the bellows is connected to the bottom of the movable upper electrode element 120 . One end is connected to the bottom of the vacuum reaction chamber 100 , one end of the metal piece is connected to the bottom of the movable upper electrode element 120 , and the other end of the metal piece is connected to the bottom of the vacuum reaction chamber 100 .
在本實施例中，所述升降裝置、所述氣體通道150和所述密封結構160均設置有三個，各個所述升降裝置沿所述可移動上電極元件120周向均勻分佈，各個所述氣體通道150分別穿過各個所述升降裝置的支撐柱140內部，各個所述密封結構160分別包圍在各個所述氣體通道150周圍。 In this embodiment, there are three lifting devices, the gas channel 150 and the sealing structure 160. Each of the lifting devices is evenly distributed along the circumferential direction of the movable upper electrode element 120, and each of the gas The channels 150 respectively pass through the interior of the support columns 140 of each of the lifting devices, and each of the sealing structures 160 respectively surrounds each of the gas channels 150 .
在本實施例中，所述支撐柱140與所述驅動裝置170連接，所述氣體通道150經由所述支撐柱140結構，且所述密封結構160設置於所述支撐柱140內，所述支撐柱140既可以起到對所述可移動上電極元件120的支撐作用，又使密封結構160不會暴露在等離子體環境中，防止等離子體腐蝕所述密封結構160，避免了可導電的密封結構160在等離子體或射頻影響下發生點火現象。另外，在本實施例中，所述可移動上電極元件120與所述腔體端蓋102之間無連接關係，在等離子體處理裝置初次安裝調整後，所述可移動上電極元件120只有上下移動過程，即使多次翻轉開關所述腔體端蓋102，也無需對所述可移動上電極元件120重新對中，較大程度上節省了人力物力，減少了時間損耗。腔體端蓋102與可移動上電 極元件120之間無連接避免了多次翻轉開關所述腔體端蓋102造成的所述可移動上電極元件120的偏移問題，更容易保持所述可移動上電極元件120和待處理晶圓W、下電極元件110之間的同心度，保證了斜邊蝕刻的製程效果，也減少了工作人員精力與時間的損耗，有利於待處理晶圓W蝕刻製程的開展。 In this embodiment, the support column 140 is connected to the driving device 170 , the gas channel 150 is structured through the support column 140 , and the sealing structure 160 is disposed in the support column 140 . The pillar 140 can not only support the movable upper electrode element 120, but also prevent the sealing structure 160 from being exposed to the plasma environment, prevent plasma from corroding the sealing structure 160, and avoid the conductive sealing structure. 160 Ignition occurs under the influence of plasma or radio frequency. In addition, in this embodiment, there is no connection relationship between the movable upper electrode element 120 and the chamber end cover 102. After the initial installation and adjustment of the plasma processing device, the movable upper electrode element 120 only has upper and lower parts. During the movement process, even if the cavity end cover 102 is flipped and opened multiple times, there is no need to re-center the movable upper electrode element 120 , which saves manpower and material resources to a large extent and reduces time loss. Cavity end cover 102 and removable power on The lack of connection between the pole elements 120 avoids the offset problem of the movable upper electrode element 120 caused by flipping and opening the cavity end cover 102 multiple times, and it is easier to maintain the movable upper electrode element 120 and the wafer to be processed. The concentricity between the circle W and the lower electrode element 110 ensures the process effect of the bevel edge etching, and also reduces the loss of energy and time of the staff, which is conducive to the development of the etching process of the wafer W to be processed.
進一步的，所述真空反應腔100的底部開設有複數個凹槽結構103，所述驅動裝置170驅動所述支撐柱140升降以帶動所述可移動上電極元件120升降，所述可移動上電極元件120處於低位元時所述支撐柱140的底部位於所述凹槽結構103內，以使所述可移動上電極元件120和待處理晶圓W的中心對齊。所述凹槽結構103的定位作用，便於所述可移動上電極元件120和待處理晶圓W中心對齊，所述可移動上電極元件120的上下位移過程中，只要使所述支撐柱140在低位時卡進所述凹槽結構103內，即可保證所述可移動上電極元件120和待處理晶圓W、下電極元件110之間的同心度，其結構簡單，操作方便。另外，所述真空反應腔100內空間有限，所述凹槽結構103使得無需在真空反應腔100內額外安裝對中工具，較大的節省了所述真空反應腔100的空間結構，增大了其空間結構的利用率。 Further, a plurality of groove structures 103 are provided at the bottom of the vacuum reaction chamber 100. The driving device 170 drives the support column 140 to rise and fall to drive the movable upper electrode element 120 to rise and fall. The movable upper electrode When the element 120 is in a low position, the bottom of the support pillar 140 is located in the groove structure 103 to align the movable upper electrode element 120 with the center of the wafer W to be processed. The positioning function of the groove structure 103 facilitates the center alignment of the movable upper electrode element 120 and the wafer W to be processed. During the up and down displacement process of the movable upper electrode element 120, as long as the support column 140 is in the When it is stuck in the groove structure 103 in the low position, the concentricity between the movable upper electrode element 120 and the wafer W to be processed and the lower electrode element 110 can be ensured. The structure is simple and the operation is convenient. In addition, the space inside the vacuum reaction chamber 100 is limited, and the groove structure 103 eliminates the need to install additional alignment tools in the vacuum reaction chamber 100, greatly saving the space structure of the vacuum reaction chamber 100, and increasing the size of the vacuum reaction chamber 100. The utilization of its space structure.
在本實施例中，所述可移動上電極元件120包含：絕緣隔離部121和上電極環122。所述絕緣隔離部121設置於所述可移動上電極元件120的底部，與待處理晶圓W的中央區域相對設置，所述絕緣隔離部121既可以是層結構，也可以是體結構。所述上電極環122環繞設置於所述絕緣隔離部121的外側，所述上電極環122與待處理晶圓W的邊緣區域相對設置。所述下電極元件110包括基座和下電極環111，所述基座的上表面為經過陽極氧化形成的介質層，其內部設有複數個用於傳送待處理晶圓W的升降頂針，所述下電極環111設置於所述基座上(在一個實施例中，所述基座具有一台部，所述下電極環111設置在該台部上)且所述基座與所 述下電極環111之間射頻導通，所述下電極環111環繞設置於待處理晶圓W的邊緣區域的下方(所述下電極環111也可與待處理晶圓W持平)，所述下電極環111和所述上電極環122相對設置。具體地，所述上電極環122和所述下電極環111可採用石墨或其他碳基材料。在製程過程中，所述上電極環122和所述下電極環111之間產生等離子體以進行待處理晶圓W的邊緣蝕刻。 In this embodiment, the movable upper electrode element 120 includes: an insulating isolation portion 121 and an upper electrode ring 122 . The insulating isolation part 121 is provided at the bottom of the movable upper electrode element 120 and is opposite to the central area of the wafer W to be processed. The insulating isolation part 121 may be a layer structure or a bulk structure. The upper electrode ring 122 is arranged around the outside of the insulation isolation part 121 , and the upper electrode ring 122 is arranged opposite to the edge area of the wafer W to be processed. The lower electrode element 110 includes a base and a lower electrode ring 111. The upper surface of the base is a dielectric layer formed by anodization, and a plurality of lifting ejector pins for transporting the wafer W to be processed are provided inside, so The lower electrode ring 111 is disposed on the base (in one embodiment, the base has a platform, and the lower electrode ring 111 is disposed on the platform) and the base is connected to the base. There is radio frequency conduction between the lower electrode rings 111, which are arranged around and below the edge area of the wafer W to be processed (the lower electrode ring 111 can also be level with the wafer W to be processed). The electrode ring 111 and the upper electrode ring 122 are arranged opposite to each other. Specifically, the upper electrode ring 122 and the lower electrode ring 111 may be made of graphite or other carbon-based materials. During the process, plasma is generated between the upper electrode ring 122 and the lower electrode ring 111 to perform edge etching of the wafer W to be processed.
另外，該等離子體處理裝置還包含環繞所述下電極元件110設置的冷水機組件和加熱器，以便在製程過程中實現對待處理晶圓W的邊緣的溫度的控制。所述下電極元件110的外側還環繞設置有絕緣環112，所述絕緣環112用於隔離所述下電極元件110的射頻電流。所述反應腔腔體101和所述下電極元件110之間還設置有等離子體約束元件113，所述等離子體約束組件113設置有複數個孔狀結構或槽結構，以保證真空反應腔100內氣體的導通率，從而防止等離子體擴散，並有效地控制泵導電現象。所述等離子體約束元件113一般為帶有介質鍍層的金屬材料，如陽極氧化材料或含Y2O3鍍層的鋁。 In addition, the plasma processing device further includes a chiller assembly and a heater arranged around the lower electrode element 110 to control the temperature of the edge of the wafer W to be processed during the process. An insulating ring 112 is also provided around the outside of the lower electrode element 110 . The insulating ring 112 is used to isolate the radio frequency current of the lower electrode element 110 . A plasma confinement element 113 is also provided between the reaction chamber body 101 and the lower electrode element 110. The plasma confinement component 113 is provided with a plurality of hole-like structures or groove structures to ensure that the vacuum reaction chamber 100 The conductivity of the gas prevents plasma diffusion and effectively controls the pump conduction phenomenon. The plasma confinement element 113 is generally a metal material with a dielectric coating, such as an anodized material or aluminum containing a Y 2 O 3 coating.
進一步的，在本實施例中，所述可移動上電極元件120內的氣體通道150為邊緣進氣通道151或中央進氣通道152。所述邊緣進氣通道151在所述可移動上電極元件120內採用多路徑分佈結構，其包含設置在上電極環122中的多個邊緣噴淋口，各個所述邊緣噴淋口沿待處理晶圓W的邊緣區域均勻分佈(類似於花灑頭結構)，以便將第一氣體均勻注入所述待處理晶圓W的邊緣區域的上方。所述中央進氣通道152包含複數個中央進氣口，所述中央進氣口位於待處理晶圓W的中央區域的上方，以便將第二氣體注入所述待處理晶圓W的中央區域的上方。通常情況下，在邊緣蝕刻製程中，所述邊緣進氣通道151通入的第一氣體包含含F、Cl等的蝕刻氣體和O2等清潔氣體以及其他的輔助蝕刻氣體，以便進行邊緣蝕刻製程。所述中央進氣通道152通入的第二氣體包含緩衝氣體或清潔氣體， 所述緩衝氣體用於在待處理晶圓W的邊緣處理時保持待處理晶圓W的上方的高氣壓，以使待處理晶圓W的中央區域免受等離子體環境的蝕刻，所述清潔氣體用於在所述真空反應腔100內無待處理晶圓W時的真空反應腔100的清潔。 Further, in this embodiment, the gas channel 150 in the movable upper electrode element 120 is an edge air inlet channel 151 or a central air inlet channel 152. The edge air inlet channel 151 adopts a multi-path distribution structure in the movable upper electrode element 120, which includes a plurality of edge spray openings arranged in the upper electrode ring 122. Each of the edge spray openings is along the edge to be processed. The edge area of the wafer W is evenly distributed (similar to the shower head structure), so that the first gas is evenly injected above the edge area of the wafer W to be processed. The central air inlet channel 152 includes a plurality of central air inlets located above the central area of the wafer W to be processed so as to inject the second gas into the central area of the wafer W to be processed. above. Normally, during the edge etching process, the first gas introduced into the edge air inlet channel 151 includes etching gases containing F, Cl, etc., cleaning gases such as O2 , and other auxiliary etching gases to facilitate the edge etching process. . The second gas passed through the central air inlet channel 152 contains buffer gas or cleaning gas. The buffer gas is used to maintain a high air pressure above the wafer W to be processed when the edge of the wafer W to be processed is processed, so that The central area of the wafer W to be processed is protected from etching by the plasma environment, and the cleaning gas is used to clean the vacuum reaction chamber 100 when there is no wafer W to be processed in the vacuum reaction chamber 100 .
在斜邊蝕刻製程中，第一氣體(如Ar、CF4、O2等)經邊緣進氣通道151進入所述真空反應腔100內的待處理晶圓W的邊緣區域的上方，在射頻的激勵作用下形成等離子體。這些等離子體經過所述可移動上電極元件120和下電極元件110之間的電場作用(電容耦合)後與待處理晶圓W的邊緣聚集的多餘膜層發生化學反應，從而去除在其他製程過程中產生的多餘膜層。與此同時，第二氣體經中央進氣通道152進入所述真空反應腔100內的待處理晶圓W的中央區域的上方，即所述可移動上電極元件120的絕緣隔離部121的下方，可調節第二氣體的流速或壓強以保護待處理晶圓W的中央區域不受等離子體環境的影響。 During the bevel etching process, the first gas (such as Ar, CF 4 , O 2 , etc.) enters above the edge area of the wafer W to be processed in the vacuum reaction chamber 100 through the edge gas inlet channel 151 . Plasma is formed under excitation. After passing through the electric field action (capacitive coupling) between the movable upper electrode element 120 and the lower electrode element 110, these plasmas chemically react with the excess film layer accumulated on the edge of the wafer W to be processed, thereby removing the excess film layer formed during other processes. excess film layer produced. At the same time, the second gas enters above the central area of the wafer W to be processed in the vacuum reaction chamber 100 through the central air inlet channel 152, that is, below the insulating isolation part 121 of the movable upper electrode element 120, The flow rate or pressure of the second gas can be adjusted to protect the central area of the wafer W to be processed from the plasma environment.
在製程過程中，第一氣體和第二氣體分別通過邊緣進氣通道151和中央進氣通道152進入所述真空反應腔100內，當所述真空反應腔100內保持一定的氣體和壓力(通常為幾百mT到幾T之間)時，由射頻電源130向所述下電極元件110輸入射頻能量，通過所述下電極環111和所述上電極環122之間的電容耦合形成等離子體。 During the process, the first gas and the second gas enter the vacuum reaction chamber 100 through the edge air inlet channel 151 and the central air inlet channel 152 respectively. When a certain gas and pressure are maintained in the vacuum reaction chamber 100 (usually (between several hundred mT to several T), the radio frequency power supply 130 inputs radio frequency energy to the lower electrode element 110, and plasma is formed through capacitive coupling between the lower electrode ring 111 and the upper electrode ring 122.
另外，在本實施例中，所述腔體端蓋102的頂部設置有金屬遮罩網結構104，以實現所述真空反應腔100的內部電場的遮罩。較佳的，所述真空反應腔100的頂部的腔體端蓋102與所述反應腔腔體101的材質相同，以便該等離子體處理裝置的加工與組裝。當然，所述腔體端蓋102的材質不僅限於此，其也可為其他介質材料。在另一實施例中，所述腔體端蓋102的材料由透明材料製成，複數個光學處理裝置設置於所述真空反應腔100的上方，即所述腔體端蓋102的上方，以監控所述可移動上電極元件120和待處理晶圓W之間的同心度。 In addition, in this embodiment, a metal shielding mesh structure 104 is provided on the top of the cavity end cover 102 to shield the internal electric field of the vacuum reaction chamber 100 . Preferably, the chamber end cover 102 on the top of the vacuum reaction chamber 100 is made of the same material as the reaction chamber body 101 to facilitate processing and assembly of the plasma processing device. Of course, the material of the cavity end cover 102 is not limited to this, and it can also be other media materials. In another embodiment, the material of the cavity end cover 102 is made of transparent material, and a plurality of optical processing devices are disposed above the vacuum reaction chamber 100, that is, above the cavity end cover 102, to The concentricity between the movable upper electrode element 120 and the wafer W to be processed is monitored.
在另一實施例中，所述可移動上電極元件120的邊緣側面和所述真空反應腔100的側壁之間的間距非常小(請見圖2)，例如兩者之間的間距小於1cm，該間距可保證所述可移動上電極元件120的上下移動過程中不發生摩擦，同時，製程過程中產生的等離子體被束縛在所述可移動上電極元件120和所述下電極元件110之間，而不會擴散到所述可移動上電極元件120和所述腔體端蓋102之間的空間，無需額外設置金屬遮罩網結構104。 In another embodiment, the distance between the edge side of the movable upper electrode element 120 and the side wall of the vacuum reaction chamber 100 is very small (see FIG. 2 ), for example, the distance between the two is less than 1 cm. This spacing ensures that no friction occurs during the up and down movement of the movable upper electrode element 120 , and at the same time, the plasma generated during the process is trapped between the movable upper electrode element 120 and the lower electrode element 110 , without diffusing into the space between the movable upper electrode element 120 and the cavity end cover 102 , and there is no need to provide an additional metal shielding mesh structure 104 .
本發明還提供了一種所述等離子體處理裝置的等離子體處理方法，該方法具體包含下列步驟：由氣體通道150將製程氣體注入真空反應腔100內；採用驅動裝置170驅動支撐柱140使可移動上電極元件120升降，以便在可移動上電極元件120和下電極元件110之間產生等離子體環境進行待處理晶圓W的邊緣區域的蝕刻。 The present invention also provides a plasma processing method of the plasma processing device. The method specifically includes the following steps: injecting process gas into the vacuum reaction chamber 100 through the gas channel 150; using the driving device 170 to drive the support column 140 to make it movable. The upper electrode element 120 moves up and down to generate a plasma environment between the movable upper electrode element 120 and the lower electrode element 110 to etch the edge area of the wafer W to be processed.
綜上所述，本發明的一種等離子體處理裝置及其等離子體處理方法，該等離子體處理裝置通過升降裝置的支撐柱140和驅動裝置170實現可移動上電極元件120的支撐與升降，使可移動上電極元件120的氣體通道150經由支撐柱140將製程氣體輸送至真空反應腔100，並設置有密封結構160以保證真空反應腔100的氣體環境，所述可移動上電極元件120與真空反應腔100的頂部無連接，真空反應腔100的頂部多次開關也不會影響可移動上電極元件120的位置，在裝置使用過程中更容易保持所述可移動上電極元件120和待處理晶圓W、下電極元件110之間的同心度，保證了斜邊蝕刻的製程效果，也減少了工作人員精力與時間的損耗，有利於待處理晶圓W蝕刻製程的開展。 In summary, the present invention provides a plasma processing device and a plasma processing method thereof. The plasma processing device realizes the support and lifting of the movable upper electrode element 120 through the support column 140 and the driving device 170 of the lifting device, so that the movable upper electrode element 120 can be supported and lowered. The gas channel 150 of the movable upper electrode element 120 transports the process gas to the vacuum reaction chamber 100 through the support column 140, and is provided with a sealing structure 160 to ensure the gas environment of the vacuum reaction chamber 100. The movable upper electrode element 120 reacts with the vacuum There is no connection at the top of the chamber 100. Multiple opening and closing of the top of the vacuum reaction chamber 100 will not affect the position of the movable upper electrode element 120. It is easier to maintain the movable upper electrode element 120 and the wafer to be processed during use of the device. The concentricity between W and the lower electrode element 110 ensures the process effect of bevel edge etching, and also reduces the loss of staff's energy and time, which is conducive to the development of the etching process of the wafer W to be processed.
進一步的，其密封結構160設置在支撐柱140內部，使密封結構160免受等離子體環境的干擾，避免了發生點火現象。 Furthermore, the sealing structure 160 is disposed inside the support column 140 to protect the sealing structure 160 from the interference of the plasma environment and avoid ignition.
進一步的，其真空反應腔100的底部開設有凹槽結構103，只需在可移動上電極元件120處於低位元時將支撐柱140卡進凹槽結構103 內，即可保證可移動上電極元件120、待處理晶圓W和下電極元件110之間的同心度。 Furthermore, a groove structure 103 is provided at the bottom of the vacuum reaction chamber 100. When the movable upper electrode element 120 is in a low position, the support column 140 only needs to be stuck into the groove structure 103. Within, the concentricity between the movable upper electrode element 120, the wafer W to be processed, and the lower electrode element 110 can be ensured.
儘管本發明的內容已經通過上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those of ordinary skill in the art upon reading the above. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.
100:真空反應腔 100: Vacuum reaction chamber
101:反應腔腔體 101:Reaction chamber cavity
102:腔體端蓋 102: Cavity end cover
103:凹槽結構 103: Groove structure
104:金屬遮罩網結構 104: Metal masking mesh structure
110:下電極元件 110: Lower electrode component
111:下電極環 111: Lower electrode ring
112:絕緣環 112:Insulation ring
113:等離子體約束元件 113:Plasma confinement element
120:可移動上電極元件 120: Movable upper electrode element
121:絕緣隔離部 121: Insulation isolation part
122:上電極環 122: Upper electrode ring
130:射頻電源 130:RF power supply
140:支撑柱 140:Support column
141:密封件 141:Seals
150:氣體通道 150:Gas channel
151:邊緣進氣通道 151: Edge air intake channel
152:中央進氣通道 152:Central air intake channel
160:密封結構 160:Sealed structure
170:驅動裝置 170:Driving device
W:待處理晶圓 W: Wafer to be processed
Claims (15)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010987374.2 | 2020-09-18 | ||
| CN202010987374.2A CN114203506B (en) | 2020-09-18 | 2020-09-18 | Plasma processing device and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202213504A TW202213504A (en) | 2022-04-01 |
| TWI817174B true TWI817174B (en) | 2023-10-01 |
Family
ID=80645033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110129054A TWI817174B (en) | 2020-09-18 | 2021-08-06 | Plasma treatment device and plasma treatment method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114203506B (en) |
| TW (1) | TWI817174B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050137067A1 (en) * | 2003-12-23 | 2005-06-23 | Michael Kemery | Inflatable structure and method of manufacture |
| US20050263484A1 (en) * | 2004-05-31 | 2005-12-01 | Jong-Chul Park | Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods |
| CN102110574A (en) * | 2009-12-28 | 2011-06-29 | 东京毅力科创株式会社 | Plasma processing apparatus |
| US20120000605A1 (en) * | 2010-06-30 | 2012-01-05 | Lam Research Corporation. | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
| CN111627843A (en) * | 2020-07-01 | 2020-09-04 | 上海邦芯半导体设备有限公司 | Novel edge etching reaction device and edge etching method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07118469B2 (en) * | 1989-05-08 | 1995-12-18 | 富士電機株式会社 | Plasma CVD equipment |
| JPH1126190A (en) * | 1997-07-04 | 1999-01-29 | Hitachi Ltd | Plasma processing device |
| JPH1154496A (en) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | Heat treatment system and gas processing system |
| JP3161392B2 (en) * | 1997-11-28 | 2001-04-25 | 日本電気株式会社 | Plasma CVD apparatus and its dry cleaning method |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| KR101577474B1 (en) * | 2008-02-08 | 2015-12-14 | 램 리써치 코포레이션 | Rf return strap for use in plasma processing apparatus |
| JP4547443B2 (en) * | 2008-04-24 | 2010-09-22 | シャープ株式会社 | Plasma processing apparatus and plasma processing method using the same |
| JP5292160B2 (en) * | 2009-03-31 | 2013-09-18 | 東京エレクトロン株式会社 | Gas flow path structure and substrate processing apparatus |
| JP5432686B2 (en) * | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN103866282B (en) * | 2012-12-14 | 2016-12-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pecvd device |
-
2020
- 2020-09-18 CN CN202010987374.2A patent/CN114203506B/en active Active
-
2021
- 2021-08-06 TW TW110129054A patent/TWI817174B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050137067A1 (en) * | 2003-12-23 | 2005-06-23 | Michael Kemery | Inflatable structure and method of manufacture |
| US20050263484A1 (en) * | 2004-05-31 | 2005-12-01 | Jong-Chul Park | Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods |
| CN102110574A (en) * | 2009-12-28 | 2011-06-29 | 东京毅力科创株式会社 | Plasma processing apparatus |
| US20120000605A1 (en) * | 2010-06-30 | 2012-01-05 | Lam Research Corporation. | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
| CN111627843A (en) * | 2020-07-01 | 2020-09-04 | 上海邦芯半导体设备有限公司 | Novel edge etching reaction device and edge etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114203506A (en) | 2022-03-18 |
| TW202213504A (en) | 2022-04-01 |
| CN114203506B (en) | 2024-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102600919B1 (en) | Process chamber for cyclic and selective material removal and etching | |
| KR100624273B1 (en) | Plasma processing apparatus | |
| KR100408990B1 (en) | Plasma processing apparatus | |
| US20040159286A1 (en) | Plasma treatment device | |
| KR100373878B1 (en) | Apparatus and method for etching a thin film layer on a substrate, and apparatus and method for positioning and clamping a substrate on an accommodating portion of the substrate support member | |
| TW200948214A (en) | Method and apparatus for controlling plasma uniformity | |
| JPH09129612A (en) | Etching gas and etching method | |
| JP2004342703A (en) | Device and method for plasma treatment | |
| WO2009084823A1 (en) | Apparatus and method for processing substrate | |
| KR20120100750A (en) | Plasma processing apparatus | |
| CN112136202B (en) | Apparatus for suppressing parasitic plasma in a plasma enhanced chemical vapor deposition chamber | |
| WO2002056357A1 (en) | Sheet-fed treating device | |
| TWI817174B (en) | Plasma treatment device and plasma treatment method | |
| KR20190140628A (en) | Plasma processing system | |
| RU2708812C1 (en) | Method of processing surface of silicon carbide plates in low-temperature inductively coupled plasma | |
| JP2006310883A (en) | Plasma processing apparatus and cleaning method thereof | |
| JPH1027784A (en) | Apparatus for low-pressure processing | |
| JP2008283217A (en) | Processing apparatus, and cleaning method thereof | |
| JP2006253733A (en) | Plasma processing apparatus and method of cleaning the same | |
| JP2000082698A (en) | Plasma processing apparatus | |
| JP2000106298A (en) | Plasma processing unit | |
| TW202228204A (en) | Plasma processing apparatus and method of adjusting the same | |
| KR102540773B1 (en) | Faraday shield and apparatus for treating substrate | |
| JPH09129611A (en) | Etching | |
| KR200238814Y1 (en) | plasma etching device |