TWI815984B - 製造用於ｅｕｖ裝置的照明系統的方法 - Google Patents

製造用於ｅｕｖ裝置的照明系統的方法 Download PDF

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Publication number: TWI815984B
Authority: TW; Taiwan
Prior art keywords: measurement light; illumination; light source; measurement; mirror
Prior art date: 2018-10-01

Application number

TW108135538A

Other languages

English (en)

Chinese (zh)

Other versions

TW202022502A (zh

Inventor

佛羅里安包默爾

約爾德利希滕特勒

Original Assignee

德商卡爾蔡司Ｓｍｔ有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-10-01

Filing date

2019-10-01

Publication date

2023-09-21

2019-10-01 Application filed by 德商卡爾蔡司Ｓｍｔ有限公司 filed Critical 德商卡爾蔡司Ｓｍｔ有限公司

2020-06-16 Publication of TW202022502A publication Critical patent/TW202022502A/zh

2023-09-21 Application granted granted Critical

2023-09-21 Publication of TWI815984B publication Critical patent/TWI815984B/zh

Links

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Images

Classifications

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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus

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Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Health & Medical Sciences (AREA)
Environmental & Geological Engineering (AREA)
Epidemiology (AREA)
Public Health (AREA)
Plasma & Fusion (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

TW108135538A 2018-10-01 2019-10-01 製造用於ｅｕｖ裝置的照明系統的方法 TWI815984B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE102018216870.9A DE102018216870A1 (de)	2018-10-01	2018-10-01	Verfahren zum Herstellen eines Beleuchtungssystems für eine EUV-Anlage
DE102018216870.9		2018-10-01

Publications (2)

Publication Number	Publication Date
TW202022502A TW202022502A (zh)	2020-06-16
TWI815984B true TWI815984B (zh)	2023-09-21

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ID=68062917

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW108135538A TWI815984B (zh)	2018-10-01	2019-10-01	製造用於ｅｕｖ裝置的照明系統的方法

Country Status (5)

Country	Link
KR (1)	KR102549403B1 (de)
CN (1)	CN112805624B (de)
DE (1)	DE102018216870A1 (de)
TW (1)	TWI815984B (de)
WO (1)	WO2020069870A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20230037817A (ko)	2021-09-10	2023-03-17	주식회사 이솔	다층막 반사형 존플레이트를 이용한 euv용 조명 장치 및 그 제조방법
KR20230054028A (ko)	2021-10-15	2023-04-24	주식회사 이솔	다층막 반사형 존플레이트를 이용한 euv 마스크 검사장치
DE102021213327B3 (de)	2021-11-26	2023-03-16	Carl Zeiss Smt Gmbh	Metrologiesystem zur Untersuchung von Objekten mit EUV-Messlicht
KR20240007006A (ko)	2022-07-07	2024-01-16	주식회사 이솔	프리폼 조명계가 구현된 고성능 euv 현미경 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW201214064A (en) *	2010-06-08	2012-04-01	Zeiss Carl Smt Gmbh	Illumination optical system for EUV projection lithography
DE102012010093A1 (de) *	2012-05-23	2013-11-28	Carl Zeiss Smt Gmbh	Facettenspiegel
DE102016203990A1 (de) *	2016-03-10	2017-09-14	Carl Zeiss Smt Gmbh	Verfahren zum Herstellen eines Beleuchtungssystems für eine EUV-Projektionsbelichtungsanlage, Beleuchtungssystem und Messverfahren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE10138313A1 (de)	2001-01-23	2002-07-25	Zeiss Carl	Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
WO2004031854A2 (de)	2002-09-30	2004-04-15	Carl Zeiss Smt Ag	Beleuchtungssystem für eine wellenlänge ≤ 193 nm mit sensoren zur bestimmung der ausleuchtung
JP2006128439A (ja) *	2004-10-29	2006-05-18	Canon Inc	露光装置及びデバイス製造方法
CN102203675B (zh) *	2008-10-31	2014-02-26	卡尔蔡司Smt有限责任公司	用于euv微光刻的照明光学部件
DE102009044462A1 (de) *	2009-11-06	2011-01-05	Carl Zeiss Smt Ag	Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage
JP5637702B2 (ja) *	2010-03-09	2014-12-10	キヤノン株式会社	露光装置およびデバイス製造方法
DE102010002822A1 (de) *	2010-03-12	2011-09-15	Carl Zeiss Smt Gmbh	Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
DE102010041298A1 (de) *	2010-09-24	2012-03-29	Carl Zeiss Smt Gmbh	EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle
DE102011082065A1 (de) *	2011-09-02	2012-09-27	Carl Zeiss Smt Gmbh	Spiegel-Array
EP3257054B1 (de) *	2015-02-10	2019-10-16	Carl Zeiss SMT GmbH	Mehrschichtiger euv-spiegel, optisches system mit einem mehrschichtigen spiegel und verfahren zur herstellung eines mehrschichtigen spiegels

2018
- 2018-10-01 DE DE102018216870.9A patent/DE102018216870A1/de not_active Ceased
2019
- 2019-09-18 CN CN201980065292.8A patent/CN112805624B/zh active Active
- 2019-09-18 WO PCT/EP2019/075037 patent/WO2020069870A1/en active Application Filing
- 2019-09-18 KR KR1020217009216A patent/KR102549403B1/ko active IP Right Grant
- 2019-10-01 TW TW108135538A patent/TWI815984B/zh active

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW201214064A (en) *	2010-06-08	2012-04-01	Zeiss Carl Smt Gmbh	Illumination optical system for EUV projection lithography
DE102012010093A1 (de) *	2012-05-23	2013-11-28	Carl Zeiss Smt Gmbh	Facettenspiegel
DE102016203990A1 (de) *	2016-03-10	2017-09-14	Carl Zeiss Smt Gmbh	Verfahren zum Herstellen eines Beleuchtungssystems für eine EUV-Projektionsbelichtungsanlage, Beleuchtungssystem und Messverfahren

Also Published As

Publication number	Publication date
KR102549403B1 (ko)	2023-06-30
TW202022502A (zh)	2020-06-16
WO2020069870A1 (en)	2020-04-09
DE102018216870A1 (de)	2020-04-02
CN112805624B (zh)	2024-07-09
CN112805624A (zh)	2021-05-14
KR20210043701A (ko)	2021-04-21

Publication	Publication Date	Title
TWI815984B (zh)	2023-09-21	製造用於ｅｕｖ裝置的照明系統的方法
US6654101B2 (en)	2003-11-25	Exposure apparatus and device manufacturing method including changing a photo-intensity distribution of a light source and adjusting an illuminance distribution on a substrate in accordance with the change
KR101944122B1 (ko)	2019-01-30	Euv 투영 노광 시스템용 미러, 광학 시스템 및 부품을 생산하는 방법
CN108713168B (zh)	2021-11-02	制造euv投射曝光*的照明的方法和照明**
JP2924344B2 (ja)	1999-07-26	投影露光装置
JP4876149B2 (ja)	2012-02-15	リソグラフィ装置における使用のためのスペクトル純度フィルタ
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JP6221159B2 (ja)	2017-11-01	コレクター
JP2015519009A (ja)	2015-07-06	ファセットミラー
KR20090112663A (ko)	2009-10-28	조사 강도 분포 측정 장치 및 측정 방법
US6972419B2 (en)	2005-12-06	Extreme ultraviolet radiation imaging
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KR100756139B1 (ko)	2007-09-05	노광장치 및 그것을 이용한 디바이스의 제조방법
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TW201923484A (zh)	2019-06-16	修復用於ｅｕｖ裝置之照明系統的方法以及偵測器模組
US20100110407A1 (en)	2010-05-06	Illumination optical system and exposure apparatus
JP2007142361A (ja)	2007-06-07	露光装置及びデバイス製造方法
JP3814444B2 (ja)	2006-08-30	照明装置及びそれを用いた投影露光装置
JP2021510214A (ja)	2021-04-15	投影リソグラフィシステムのための瞳ファセットミラー、照明光学部品、および光学システム
JP3275269B2 (ja)	2002-04-15	露光装置、デバイス製造方法、及び該方法で製造されたデバイス
US7522265B2 (en)	2009-04-21	Optical aligner using a compensation light
JP2009041956A (ja)	2009-02-26	瞳透過率分布計測装置及び方法、投影露光装置、並びにデバイス製造方法