TWI815889B - Real time monitoring with closed loop chucking force control - Google Patents

Real time monitoring with closed loop chucking force control Download PDF

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TWI815889B
TWI815889B TW108116655A TW108116655A TWI815889B TW I815889 B TWI815889 B TW I815889B TW 108116655 A TW108116655 A TW 108116655A TW 108116655 A TW108116655 A TW 108116655A TW I815889 B TWI815889 B TW I815889B
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workpiece
clamping
force
gas pressure
sensor
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TW108116655A
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TW201947702A (en
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威德格恩 波亞二世
維傑Ｄ 帕克
馬修詹姆士 布薛
康斯坦汀 馬可拉契夫
小野真德
山恩 薩奇
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美商應用材料股份有限公司
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    • H01J37/32—Gas-filled discharge tubes
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
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    • H—ELECTRICITY
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    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
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    • H01J2237/245—Detection characterised by the variable being measured
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    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
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    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract

Embodiments disclosed herein include a method for minimizing chucking forces on a workpiece disposed on a electrostatic chuck within a plasma processing chamber. The method begins by placing a workpiece on an electrostatic chuck in a processing chamber. A plasma is struck within the processing chamber. A deflection force is monitored on the workpiece. A chucking voltage is applied at a minimum value. A backside gas pressure is applied at a minimum pressure. The chucking voltage and or backside gas pressure is adjusted such that the deflection force is less than a threshold value. And the chucking voltage and the backside gas pressure are simultaneously ramped up.

Description

具有閉環夾持力控制的即時監測Real-time monitoring with closed-loop clamping force control

本發明的實施例通常係關於在用於製造微電子裝置的處理腔室中使用的基板支撐件。Embodiments of the invention relate generally to substrate supports for use in processing chambers used to fabricate microelectronic devices.

在高精度製造中，例如在半導體製造中，工件可能需要在製造操作期間由固定裝置精確地保持，以增加均勻品質並減少缺陷。在一些製造操作中，基板支撐件可以用作固定裝置，以將工件保持在支撐結構上。靜電力或其它力（「夾緊力」）通常用於在一或多個製造操作期間將工件精確地保持到基板支撐件的工件支撐表面。該等類型的基板支撐件被稱為靜電吸盤（electrostatic chucks, ESC）。In high-precision manufacturing, such as in semiconductor manufacturing, workpieces may need to be held precisely by fixtures during manufacturing operations to increase uniform quality and reduce defects. In some manufacturing operations, substrate supports can be used as fixtures to hold workpieces on support structures. Electrostatic or other forces ("clamping forces") are often used to accurately hold a workpiece to the workpiece support surface of a substrate support during one or more manufacturing operations. These types of substrate supports are called electrostatic chucks (ESC).

工件應盡可能地以最小的夾緊力保持，而盡可能地少與工件支撐表面的接觸，以減少在該等製造操作期間的缺陷。然而，由於製造偏差，諸如施加到工件的可改變基板支撐件的支撐表面的夾持力、磨損和污染狀況的表面處理，並且由於其它環境影響，製造人員自己經常增加目標夾緊力來提供安全係數，以確保施加足夠的夾緊力來抵消上述變化和該等變化對夾持力的影響。The workpiece should be held with the minimum clamping force possible and with as little contact as possible with the workpiece support surface to reduce defects during these manufacturing operations. However, due to manufacturing variations, such as surface treatments applied to the workpiece that can alter the clamping force, wear and contamination conditions of the support surface of the substrate support, and due to other environmental effects, manufacturing personnel themselves often increase the target clamping force to provide safety Factor to ensure that sufficient clamping force is applied to offset the above changes and their effect on the clamping force.

半導體製造工業中使用的大多數基板支撐件通常施加大於必要的夾緊力，即過度夾持。過度夾持會對工件造成損壞，例如，在工件的背面造成凹坑，使基板支撐件的一部分嵌入工件中，增加工件中的薄膜應力，及/或導致可能在工件的處理側上造成品質問題的微粒。例如，對於大批量生產運行，平均總前側缺陷在每個晶圓約3個至4個25nm或更大大小的顆粒之間波動。分析表明，該等缺陷的80%至90%是來自ESC的含Si、Al或O的顆粒。工件背面的顆粒測試結果表明，一個標準1800V夾持/解除夾持循環可以在工件背面產生約8000個至24000個大小為0.5微米或更大的缺陷。在該等缺陷中，約35%是劃痕，約50%是由劃痕產生的嵌入的矽顆粒，約15%是來自ESC及/或工件的Si、Si-O、Al-Si-O鬆散顆粒。在使用大夾持力夾持和解除夾持期間，經由工件上升/下降運動，該等鬆散缺陷中的一些能夠落在工件的表面上。Most substrate supports used in the semiconductor manufacturing industry typically apply more clamping force than necessary, i.e., over-clamp. Over-clamping can cause damage to the workpiece, for example, creating dents on the backside of the workpiece, causing part of the substrate support to become embedded in the workpiece, increasing film stress in the workpiece, and/or causing possible quality issues on the processed side of the workpiece. of particles. For example, for high-volume production runs, the average total front-side defects fluctuate between about 3 to 4 particles of 25nm or larger size per wafer. Analysis shows that 80% to 90% of these defects are Si, Al or O-containing particles from ESC. Particle test results on the back of the workpiece indicate that a standard 1800V clamping/unclamping cycle can produce approximately 8,000 to 24,000 defects of 0.5 microns or larger on the back of the workpiece. Among these defects, about 35% are scratches, about 50% are embedded silicon particles generated by scratches, and about 15% are loose Si, Si-O, and Al-Si-O from ESC and/or workpieces. Particles. Some of these loose defects can land on the surface of the workpiece via the workpiece's lifting/lowering motion during clamping and unclamping using high clamping forces.

隨著製造公差變得越來越嚴格並且降低成本的需求變得更重要，需要提供更一致和可預測的夾緊力以適應更寬範圍的製造偏差並減少上文論述的製造缺陷之新的方法。As manufacturing tolerances become tighter and the need to reduce costs becomes more important, there is a need to provide more consistent and predictable clamping forces to accommodate a wider range of manufacturing deviations and reduce the manufacturing defects discussed above. method.

因此，需要一種在處理期間支撐工件的改進的設備及方法。Therefore, what is needed is an improved apparatus and method for supporting workpieces during processing.

本文揭示的實施例包括一種用於最小化設置在電漿處理腔室內的靜電吸盤上的工件上的夾持力的方法。該方法首先將工件放在處理腔室中的靜電吸盤上。在該處理腔室內轟擊電漿。監測該工件上的偏轉力。以最小值施加夾持電壓。以最小壓力施加背面氣體壓力。調整該夾持電壓及/或該背面氣體壓力，使得該偏轉力小於閾值。而且，同時地斜升該夾持電壓和該背面氣體壓力。Embodiments disclosed herein include a method for minimizing clamping forces on a workpiece disposed on an electrostatic chuck within a plasma processing chamber. The method begins by placing the workpiece on an electrostatic chuck in a processing chamber. A plasma is bombarded within the processing chamber. Monitor the deflection force on the workpiece. Apply clamping voltage at minimum value. Apply back gas pressure at minimum pressure. The clamping voltage and/or the backside gas pressure are adjusted so that the deflection force is less than a threshold. Furthermore, the clamping voltage and the backside gas pressure are ramped up simultaneously.

現將詳細地參考實施例，實施例的實例示出在隨附附圖中，其中圖示一些但非所有的實施例。實際上，該等概念可以以許多不同的形式體現，並且在本文中不應被解釋為限制性的；相反，該等實施例經提供以使得本揭示內容將滿足適用的法律要求。相同的元件符號將盡可能用於指代相同的部件或零件。Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, in which some, but not all, embodiments are illustrated. Indeed, these concepts may be embodied in many different forms and should not be construed as limiting herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. Wherever possible, the same component symbols will be used to refer to the same component or part.

本文揭示的實施例包括感測器組件，該感測器組件包括感測器殼和偏轉感測器中的一或多者。感測器組件經配置為設置在基板支撐組件內，該基板支撐組件諸如經配置有背面氣體的靜電吸盤，或用於在處理腔室中進行處理時保持工件的其它合適的組件。例如，感測器組件可以設置在現有的背面氣體輸送孔洞或靜電吸盤中的其它孔洞中。偏轉感測器可以提供對工件中的偏轉的即時量測，以確定設置在靜電吸盤上的工件上的力的平衡。藉由使用偏轉感測器來確定夾持力，可以優化工件的夾持/解除夾持處理，以最小化夾持力，此舉減少/減弱了背面工件缺陷和由此產生的顆粒。例如，藉由在夾持/解除夾持期間使背面He壓力的流動和夾持電壓同時地斜升（ramp up）和斜降（ramp down），該處理使適於保持工件的夾持力最小化，這最小化背面工件劃痕和由此產生的顆粒。Embodiments disclosed herein include a sensor assembly including one or more of a sensor housing and a deflection sensor. The sensor assembly is configured to be disposed within a substrate support assembly, such as an electrostatic chuck configured with backing gas, or other suitable assembly for holding the workpiece while processing in the processing chamber. For example, the sensor assembly can be placed in an existing backside gas delivery hole or other hole in the electrostatic chuck. The deflection sensor can provide an instant measurement of the deflection in the workpiece to determine the balance of forces on the workpiece disposed on the electrostatic chuck. By using deflection sensors to determine clamping force, the clamping/unclamping process of the workpiece can be optimized to minimize clamping force, which reduces/weakens backside workpiece defects and resulting particles. For example, this process minimizes the clamping force suitable for holding the workpiece by causing the flow of backside He pressure and the clamping voltage to ramp up and down simultaneously during clamping/unclamping. ization, which minimizes backside workpiece scratches and resulting particles.

圖1圖示感測器組件190的一個實施例。圖1描繪了示例性電漿處理腔室100的示意圖，電漿處理腔室100中安裝有基板支撐組件170。基板支撐組件170中設置有感測器組件190。在一個實施例中，電漿處理腔室100是濺射蝕刻處理腔室或電漿蝕刻系統。然而，其它類型的處理腔室，諸如物理氣相沉積（即，濺射）腔室、化學氣相沉積腔室、蝕刻腔室、選擇性移除處理腔室（selective removal process, SRP）或其它真空處理腔室，也可以用於實施本文揭示的實施例。FIG. 1 illustrates one embodiment of a sensor assembly 190. FIG. 1 depicts a schematic diagram of an exemplary plasma processing chamber 100 with a substrate support assembly 170 installed therein. The sensor assembly 190 is provided in the substrate support assembly 170 . In one embodiment, plasma processing chamber 100 is a sputter etch processing chamber or plasma etch system. However, other types of processing chambers, such as physical vapor deposition (i.e., sputtering) chambers, chemical vapor deposition chambers, etching chambers, selective removal process (SRP), or others Vacuum processing chambers may also be used to implement the embodiments disclosed herein.

電漿處理腔室100是真空腔室，其可以適當地適於在工件101（諸如基板，例如矽晶圓）的處理期間於腔室內部容積120內保持次大氣壓（sub-atmospheric pressures）。電漿處理腔室100包括具有底表面126的腔室主體106，並且電漿處理腔室100由蓋104覆蓋，蓋104封閉腔室內部容積120。腔室主體106和蓋104可以由金屬製成，諸如鋁或其它合適的材料。Plasma processing chamber 100 is a vacuum chamber that may be suitably adapted to maintain sub-atmospheric pressures within chamber interior volume 120 during processing of workpiece 101 (such as a substrate, eg, a silicon wafer). The plasma processing chamber 100 includes a chamber body 106 having a bottom surface 126 and is covered by a lid 104 that encloses the chamber interior volume 120 . Chamber body 106 and lid 104 may be made of metal, such as aluminum or other suitable material.

電漿處理腔室100耦接真空系統114並與真空系統114流體連通，真空系統114包括節流閥（未示出）和真空泵（未示出），以用於抽空和排空電漿處理腔室100。可以藉由調整節流閥及/或真空泵來調整電漿處理腔室100內部的壓力。電漿處理腔室100還耦接到處理氣體供應118並與處理氣體供應118流體連通，處理氣體供應118可以向電漿處理腔室100供應一或多種處理氣體，諸如氬、氧、氯、氟或適於處理工件101的其它氣體。Plasma processing chamber 100 is coupled to and in fluid communication with vacuum system 114 , which includes a throttle valve (not shown) and a vacuum pump (not shown) for evacuating and evacuating the plasma processing chamber. Room 100. The pressure inside the plasma processing chamber 100 can be adjusted by adjusting the throttle valve and/or the vacuum pump. Plasma processing chamber 100 is also coupled to and in fluid communication with processing gas supply 118 , which may supply one or more processing gases, such as argon, oxygen, chlorine, fluorine, to plasma processing chamber 100 or other gases suitable for processing the workpiece 101 .

RF電漿電源117可以激勵處理氣體以保持電漿102來處理工件101。視情況地，基板支撐組件170可以偏壓工件101以將來自電漿102的離子吸引至其上。從處理氣體供應118將諸如氯的處理氣體引入電漿處理腔室100中，並且氣體壓力經調整以進行電漿激發。當輸送RF功率時，經由電容耦合以在腔室內部容積120中激發電漿102。可以調整或預設RF匹配（未示出）以提高從RF電漿電源117到電漿102的功率傳輸效率。An RF plasma power supply 117 can energize the process gas to maintain the plasma 102 to process the workpiece 101 . Optionally, substrate support assembly 170 may bias workpiece 101 to attract ions from plasma 102 thereto. Process gas, such as chlorine, is introduced into plasma processing chamber 100 from process gas supply 118 and the gas pressure is adjusted for plasma excitation. When RF power is delivered, plasma 102 is excited in the chamber interior volume 120 via capacitive coupling. RF matching (not shown) may be adjusted or preset to improve power transfer efficiency from RF plasma power source 117 to plasma 102 .

基板支撐組件170設置在腔室內部容積120內。基板支撐元件170具有工件支撐表面172，工件101在處理期間擱置在工件支撐表面172上。基板支撐元件170可以包括真空吸盤、靜電吸盤、基座、加熱器或適於在處理期間將工件101支撐在電漿處理腔室100內的其它基板支撐件。A substrate support assembly 170 is disposed within the chamber interior volume 120 . The substrate support element 170 has a workpiece support surface 172 on which the workpiece 101 rests during processing. Substrate support element 170 may include a vacuum chuck, electrostatic chuck, pedestal, heater, or other substrate support suitable for supporting workpiece 101 within plasma processing chamber 100 during processing.

在一個實施例中，基板支撐元件170包括靜電吸盤122。基板支撐元件170可以另外包括冷卻板151和支撐基部152。支撐基部152可以包括支撐殼體149、波紋管元件110和支撐軸112。支撐軸112可以耦接到升降機構113，升降機構113可以提供基板支撐組件170在上部處理位置（如圖所示）和下部工件傳輸位置（未示出）之間的豎直移動。波紋管元件110可以圍繞支撐軸112設置，並且可以耦接在支撐基部152與電漿處理腔室100的底表面126之間，以提供柔性密封，該柔性密封允許基板支撐元件170的豎直運動，同時防止來自電漿處理腔室100內的真空的損失。In one embodiment, substrate support element 170 includes electrostatic chuck 122 . The substrate support member 170 may additionally include a cooling plate 151 and a support base 152 . The support base 152 may include a support housing 149 , a bellows element 110 and a support shaft 112 . The support shaft 112 may be coupled to a lift mechanism 113 that may provide vertical movement of the substrate support assembly 170 between an upper processing position (shown) and a lower workpiece transfer position (not shown). Bellows element 110 may be disposed about support shaft 112 and may be coupled between support base 152 and bottom surface 126 of plasma processing chamber 100 to provide a flexible seal that allows vertical movement of substrate support element 170 , while preventing loss of vacuum from within the plasma processing chamber 100 .

設置在基板支撐組件170上的工件101的溫度調整可以由設置在冷卻板151中的多個冷卻通道160來促成。冷卻通道160耦接流體源142並與流體源142流體連通，流體源142提供冷卻劑，諸如水，但是也可以使用任何合適的冷卻劑流體、氣體或液體。Temperature adjustment of the workpiece 101 disposed on the substrate support assembly 170 may be facilitated by a plurality of cooling channels 160 disposed in the cooling plate 151 . Cooling channel 160 is coupled to and in fluid communication with fluid source 142 which provides a coolant, such as water, although any suitable coolant fluid, gas or liquid may be used.

基板支撐組件170可以包括基板升降件130，以在經由機器人（未示出）傳輸進出電漿處理腔室100期間支撐在工件支撐表面172上方間隔開的工件101。基板升降件130可以包括與連接到軸111的平臺108對準的升降桿109。基板支撐組件170可以包括通孔（未示出），以在升降桿109處於升高位置時接收穿過其該通孔的升降桿109（例如，當支撐工件101時）。基板升降件130耦接到第二升降機構132，以使升降桿109延伸穿過通孔來將工件101支撐在工件支撐表面172上方的位置，以便於機器人進行傳輸。基板升降件130另外將升降桿109降低到工件支撐表面172下方，以便將工件101放在工件支撐表面172上。The substrate support assembly 170 may include a substrate lift 130 to support the workpiece 101 spaced above the workpiece support surface 172 during transport into and out of the plasma processing chamber 100 via a robot (not shown). Substrate lift 130 may include a lift rod 109 aligned with platform 108 connected to shaft 111 . The substrate support assembly 170 may include a through hole (not shown) to receive the lift rod 109 therethrough when the lift rod 109 is in a raised position (eg, when supporting the workpiece 101 ). The substrate lifting member 130 is coupled to the second lifting mechanism 132 so that the lifting rod 109 extends through the through hole to support the workpiece 101 at a position above the workpiece support surface 172 to facilitate robot transportation. The substrate lift 130 additionally lowers the lift rod 109 below the workpiece support surface 172 to place the workpiece 101 on the workpiece support surface 172 .

靜電吸盤122包括圓盤150。圓盤150可以包括加熱元件。可以使用耦接到一或多個溫度監測器的一或多個溫度感測器（未示出）（諸如熱電偶和類似者）來監測圓盤150、冷卻板151及/或靜電吸盤122的其它部件之溫度。在一個實例中，圓盤150耦接到至少一個熱電偶以用於溫度監測。Electrostatic chuck 122 includes disc 150 . Disk 150 may include heating elements. One or more temperature sensors (not shown) coupled to one or more temperature monitors, such as thermocouples and the like, may be used to monitor the temperature of disk 150 , cooling plate 151 and/or electrostatic chuck 122 Temperature of other components. In one example, disk 150 is coupled to at least one thermocouple for temperature monitoring.

圓盤150支撐和夾持工件101，即向工件101施加夾緊力（Fc）。圓盤150可以包括電絕緣的圓盤基部162，圓盤基部162具有嵌入其中的電極134，以產生夾緊力（Fc）。電極134電連接到夾持電源140，諸如DC電源。電極134提供夾緊力（Fc），以將工件101夾持到圓盤150的工件支撐表面172。電極134可以由任何合適的導電材料製成，諸如金屬或金屬合金。施加至電極134的功率可以由耦接到夾持電源140的控制系統194控制。在一個實例中，圓盤150包括用於夾持工件101的一個電極134。電極134可以是設置在圓盤基部162中的薄盤或接線。在另一個實例中，圓盤150包括兩個或兩個以上電極134，以夾持工件101。電極134各自可以是薄半圓形或「D」形板，其可以彼此獨立地操作。然而，一或多個電極134可以具有任何合適的形狀，其可以包括環形、楔形、條形等。The disc 150 supports and clamps the workpiece 101 , ie, applies a clamping force (Fc) to the workpiece 101 . Disc 150 may include an electrically insulating disc base 162 having electrodes 134 embedded therein to generate a clamping force (Fc). Electrode 134 is electrically connected to a clamping power source 140, such as a DC power source. Electrode 134 provides a clamping force (Fc) to clamp workpiece 101 to workpiece support surface 172 of disc 150 . Electrode 134 may be made of any suitable conductive material, such as a metal or metal alloy. Power applied to electrode 134 may be controlled by control system 194 coupled to clamp power supply 140 . In one example, disc 150 includes an electrode 134 for holding workpiece 101 . Electrodes 134 may be thin disks or wires disposed in disk base 162 . In another example, disc 150 includes two or more electrodes 134 to hold workpiece 101 . The electrodes 134 may each be a thin semicircular or "D" shaped plate that may operate independently of each other. However, one or more electrodes 134 may have any suitable shape, which may include rings, wedges, strips, etc.

檯面168和凹陷164設置在圓盤基部162的工件支撐表面172上。工件支撐表面172可以另外包含凹槽和通道或其它幾何形狀中的一或多個。工件101可以支撐在檯面168上並升高到凹陷164上方。凹陷164可以與氣體供應141流體連通，以在檯面168之間提供流體，諸如氦、氬或其它合適的背面氣體。背面氣體可以通過形成在圓盤150中的一或多個背面氣體輸送孔洞198而從氣體供應141輸送到凹陷164。背面氣體可以在工件101與圓盤150之間流動，以便調整在圓盤150與工件101之間的傳熱速率。在一個實例中，背面氣體可以包括惰性氣體（諸如氬）。氣體供應可以輸送約10Torr或更多的背面氣體壓力（在圖5中以Fp表示），諸如約4Torr或更大。背面氣體在工件101上施加壓力Fp，並且在下文詳細論述。Lands 168 and recesses 164 are provided on the workpiece support surface 172 of the disc base 162 . Workpiece support surface 172 may additionally include one or more of grooves and channels or other geometries. Workpiece 101 may be supported on table 168 and elevated above recess 164 . Recesses 164 may be in fluid communication with a gas supply 141 to provide fluid, such as helium, argon, or other suitable backside gas, between mesas 168 . Backside gas may be delivered from gas supply 141 to recess 164 through one or more backside gas delivery holes 198 formed in disk 150 . Backside gas can flow between workpiece 101 and disc 150 to adjust the rate of heat transfer between disc 150 and workpiece 101 . In one example, the backside gas may include an inert gas (such as argon). The gas supply may deliver a backside gas pressure (denoted as Fp in Figure 5) of about 10 Torr or more, such as about 4 Torr or more. The backside gas exerts a pressure Fp on the workpiece 101 and is discussed in detail below.

感測器組件190可以設置在形成於圓盤150中的通孔中，諸如背面氣體輸送孔洞198或其它合適的通孔，或設置在升降桿的中空部分中。感測器組件190可以是多孔的，並且允許流體（諸如背面氣體）從中流過。例如，感測器組件190可以具有允許流體通過感測器組件190的通道。在其它實施例中，感測器組件190可以安裝在凹陷164中或其它合適的位置。The sensor assembly 190 may be disposed in a through hole formed in the disk 150, such as the back gas delivery hole 198 or other suitable through hole, or in a hollow portion of the lift rod. Sensor assembly 190 may be porous and allow fluid, such as backside gas, to flow therethrough. For example, sensor assembly 190 may have channels that allow fluid to pass through sensor assembly 190 . In other embodiments, sensor assembly 190 may be mounted in recess 164 or other suitable location.

感測器組件190可以與控制系統194連通。感測器組件190量測工件101在工件支撐表面172上的偏轉。控制器192基於由感測器組件190量測到的偏轉而確定施加到工件101的夾緊力Fc。以這種方式，控制器192可以藉由調整由夾持電源140提供給電極134的夾緊電壓Vc來調整夾緊力Fc，以便保持所需的夾緊力Fc。藉由即時監測實際夾持力（經由感測器組件190）並即時調整提供給電極134的功率來保持所需的夾緊力Fc，與常規的吸盤技術相比，可以減少靜電吸盤122對工件101的損壞。Sensor assembly 190 may communicate with control system 194 . Sensor assembly 190 measures deflection of workpiece 101 on workpiece support surface 172 . Controller 192 determines the clamping force Fc applied to workpiece 101 based on the deflection measured by sensor assembly 190 . In this manner, the controller 192 can adjust the clamping force Fc by adjusting the clamping voltage Vc provided to the electrode 134 by the clamping power supply 140 to maintain the desired clamping force Fc. By real-time monitoring of the actual clamping force (via the sensor assembly 190) and real-time adjustment of the power provided to the electrode 134 to maintain the required clamping force Fc, the electrostatic chuck 122 can reduce the number of pairs of workpieces compared to conventional chuck technology. 101 damage.

有利地，可以利用依賴於感測器組件190提供的資料的反饋迴路來控制圓盤150的操作參數。可以擴展感測器組件190的偏轉量測以計算工件101上的即時力，以用於最小化施加在工件101上的夾持力，從而減少缺陷和顆粒產生。Advantageously, operating parameters of disk 150 may be controlled using a feedback loop that relies on information provided by sensor assembly 190 . The deflection measurements of the sensor assembly 190 can be extended to calculate the instantaneous force on the workpiece 101 for use in minimizing the clamping force exerted on the workpiece 101 to reduce defects and particle generation.

圖2是圖1中所示的靜電吸盤122的局部橫截面圖，靜電吸盤122具有安裝在背面氣體輸送孔洞198中的感測器組件190。熟習該項技術者應瞭解，感測器組件190可以安裝在靜電吸盤122中的孔洞或凹陷中。在一或多個場景中，靜電吸盤122具有複數個感測器組件190，以檢測工件偏轉，並且由此檢測在工件上的力。感測器組件190的進一步描述將基於感測器組件190經放置在背面氣體輸送孔洞198中之一者中的情況。圓盤150中的感測器組件安裝在其中的孔洞的形狀不限於圓孔。孔洞可以是雷射鑽孔、放電加工（Electrical discharge machining, EDM）、或以任何其它合適的方式形成的。FIG. 2 is a partial cross-sectional view of the electrostatic chuck 122 shown in FIG. 1 with the sensor assembly 190 mounted in the gas delivery hole 198 in the back. Those skilled in the art will appreciate that the sensor assembly 190 may be mounted in a hole or recess in the electrostatic chuck 122 . In one or more scenarios, the electrostatic chuck 122 has a plurality of sensor assemblies 190 to detect workpiece deflection, and thereby detect forces on the workpiece. Further description of the sensor assembly 190 will be based on the case where the sensor assembly 190 is placed in one of the back gas delivery holes 198 . The shape of the hole in the disc 150 in which the sensor assembly is mounted is not limited to a circular hole. The holes may be laser drilled, electrical discharge machining (EDM), or formed in any other suitable manner.

背面氣體通道218可以包括背面氣體輸送孔洞198和連接到其上的過渡導管210，以向圓盤150的工件支撐表面172提供背面氣體。在感測器組件190設置在背面氣體輸送孔洞198中並硬接線（hardwired）到控制系統194的實施例中，在感測器組件190和控制系統194之間的通訊連接284可以至少部分地橫穿背面氣體通路218。在其中感測器組件396設置在升降桿的中空部分320中並硬接線到控制系統194的實施例中，如圖3所示，感測器組件396與控制系統194之間的通訊連接284可以至少部分地橫穿靜電吸盤122中的升降桿孔。在其中感測器組件設置在靜電吸盤122的工件支撐表面172中的孔洞或凹陷中的又一些實施例中，感測器組件190與控制系統194之間的通訊連接284之間的通訊連接可以是無線的或經由基板支撐組件170硬接線的。The back gas channel 218 may include a back gas delivery hole 198 and a transition conduit 210 connected thereto to provide back gas to the workpiece support surface 172 of the disc 150 . In embodiments in which the sensor assembly 190 is disposed in the back gas delivery aperture 198 and is hardwired to the control system 194 , the communication connection 284 between the sensor assembly 190 and the control system 194 may be at least partially transverse. Pass through the back gas passage 218. In embodiments in which the sensor assembly 396 is disposed in the hollow portion 320 of the lift rod and is hardwired to the control system 194, as shown in Figure 3, the communication connection 284 between the sensor assembly 396 and the control system 194 may At least partially traverse the lift rod hole in the electrostatic chuck 122 . In still other embodiments in which the sensor assembly is disposed in a hole or recess in the workpiece support surface 172 of the electrostatic chuck 122, the communication connection 284 between the sensor assembly 190 and the control system 194 may Either wireless or hardwired via the base support assembly 170 .

感測器組件190包括感測器280和感測器殼220。感測器280可以是基於光纖的感測器，諸如法布裡-珀羅感測器（Fabry-Pérot sensor, FPS），或干涉儀，或適於量測小的偏轉的其它感測器。在一個實施例中，感測器280是FPS。感測器280與控制系統194通訊。在一個實施例中，感測器280可以具有與控制系統194中的控制器192硬連線的通訊連接284。在另一個實施例中，感測器組件190可以與控制系統194無線通訊。感測器280可以量測指示與設置在圓盤150上的工件（未示出）相距的距離的度量，並且即時地向控制系統194提供該度量，以用於控制系統194或其它合適的裝置進行分析。Sensor assembly 190 includes sensor 280 and sensor housing 220 . Sensor 280 may be a fiber-based sensor, such as a Fabry-Pérot sensor (FPS), or an interferometer, or other sensor suitable for measuring small deflections. In one embodiment, sensor 280 is a FPS. Sensor 280 communicates with control system 194 . In one embodiment, the sensor 280 may have a hardwired communication connection 284 with the controller 192 in the control system 194 . In another embodiment, sensor assembly 190 may communicate wirelessly with control system 194 . Sensor 280 may measure a metric indicative of a distance from a workpiece (not shown) disposed on disc 150 and provide the metric instantaneously to control system 194 for use by control system 194 or other suitable device. Perform analysis.

感測器280可以具有感測器頭282。感測器頭282可以發射和接收用於進行距離量測的信號。感測器280可以精確地安裝在圓盤150中，使得可以即時量測感測器頭282與任何物體（例如工件（未示出））之間的距離，以確定具有奈米精度的相對位移。提供豎直線298，豎直線298垂直於工件支撐表面172。豎直線298僅是說明性的，而不一定位於背面氣體輸送孔洞198或圓盤150中的其它孔洞中。感測器280可以精確地安裝，使得感測器殼220將感測器頭282保持在豎直線298的+/-3度內，或換言之，與工件支撐表面172的垂線相距+/-3度。藉由調整感測器殼220在圓盤150內的位置，感測器頭282的距離可從距檯面168的頂部小於約5 mm精確地調整到距檯面168的頂部約300 mm。Sensor 280 may have a sensor head 282 . The sensor head 282 can transmit and receive signals for distance measurement. Sensor 280 can be precisely mounted in disk 150 such that the distance between sensor head 282 and any object, such as a workpiece (not shown), can be instantly measured to determine relative displacement with nanometer precision. . A vertical line 298 is provided that is perpendicular to the workpiece support surface 172 . Vertical lines 298 are illustrative only and do not necessarily lie in back gas delivery holes 198 or other holes in disk 150 . Sensor 280 may be mounted precisely such that sensor housing 220 holds sensor head 282 within +/-3 degrees of vertical line 298, or in other words, +/-3 degrees from normal to workpiece support surface 172 . By adjusting the position of sensor housing 220 within disk 150, the distance of sensor head 282 can be accurately adjusted from less than about 5 mm from the top of table 168 to about 300 mm from the top of table 168.

感測器280可以包括用於發射輻射的輻射發射器和用於量測由工件101反射的輻射的部分的輻射檢測器。輻射，或信號，可以是例如波長在約600奈米與約1700奈米之間的電磁輻射。感測器280中的輻射檢測器量測發射的輻射信號的返回路徑。因此，感測器280的角度和位置可能影響量測。感測器殼220將感測器280保持在精確的位置和取向，以便於進行準確量測。感測器殼220可以提供感測器280的自對準。有利地，感測器頭282可以朝向工件支撐表面172向上或遠離工件支撐表面172向下從距工件支撐表面172的頂部小於約5 mm到距工件支撐表面172的頂部約30 mm進行精確地調整。Sensor 280 may include a radiation emitter for emitting radiation and a radiation detector for measuring a portion of the radiation reflected by workpiece 101 . The radiation, or signal, may be, for example, electromagnetic radiation having a wavelength between about 600 nanometers and about 1700 nanometers. The radiation detector in sensor 280 measures the return path of the emitted radiation signal. Therefore, the angle and position of the sensor 280 may affect the measurement. Sensor housing 220 holds sensor 280 in a precise position and orientation to facilitate accurate measurements. Sensor housing 220 may provide self-alignment of sensor 280 . Advantageously, the sensor head 282 can be precisely adjusted upwardly toward the workpiece support surface 172 or downwardly away from the workpiece support surface 172 from less than about 5 mm from the top of the workpiece support surface 172 to about 30 mm from the top of the workpiece support surface 172 .

圖4是基板支撐件（諸如靜電吸盤122）的頂平面視圖，圖示感測器組件190的各種位置。如上所述，感測器組件190可以位於靜電吸盤122中提供的現有孔洞（諸如背面氣體輸送孔洞198）中、在升降桿109的中空部分中、或在形成在靜電吸盤122中的孔洞中。感測器組件190的位置可以基於靜電吸盤122的圓盤150的現有配置而確定。一或多個感測器組件421至428、190可以位於具有背面氣體的圓盤150的工件支撐表面172上。感測器組件421-428、190可以放置在圓盤150的對應於夾持電極的佈置的同心行及/或區域中。例如，靜電吸盤122可以具有複數個同心佈置的獨立夾持電極。感測器組件421-428可以佈置在內環組430和外環組440中。感測器組件421-428可以檢測沿著圓盤150的局部夾持力的微小變化。在一些實施例中，多個感測器組件421-428可以另外包括在中心位置的感測器組件190。有利地，感測器組件421-428的該佈置在整個工件101上提供離散的偏轉量測，以用於使工件101免於因過度夾持而造成損壞的增強保護。FIG. 4 is a top plan view of a substrate support, such as electrostatic chuck 122 , illustrating various positions of sensor assembly 190 . As mentioned above, sensor assembly 190 may be located in an existing hole provided in electrostatic chuck 122 (such as back gas delivery hole 198), in a hollow portion of lift rod 109, or in a hole formed in electrostatic chuck 122. The location of sensor assembly 190 may be determined based on the existing configuration of disc 150 of electrostatic chuck 122 . One or more sensor assemblies 421 to 428, 190 may be located on the workpiece support surface 172 of the gas-backed disk 150. Sensor assemblies 421 - 428 , 190 may be placed in concentric rows and/or areas of disk 150 corresponding to the arrangement of clamping electrodes. For example, the electrostatic chuck 122 may have a plurality of concentrically arranged independent clamping electrodes. Sensor assemblies 421 - 428 may be arranged in inner ring group 430 and outer ring group 440 . Sensor assemblies 421 - 428 can detect small changes in local clamping force along disc 150 . In some embodiments, the plurality of sensor assemblies 421 - 428 may additionally include sensor assembly 190 in a central location. Advantageously, this arrangement of sensor assemblies 421 - 428 provides discrete deflection measurements throughout the workpiece 101 for enhanced protection of the workpiece 101 from damage due to over-clamping.

圖5是靜電吸盤122的局部橫截面圖，靜電吸盤122上設置有工件101。示出的是緊鄰感測器組件190的靜電吸盤122的圓盤150和檯面168。檯面168鄰近一或多個凹陷164設置。檯面168可以包括方形或矩形塊、錐形、楔形、金字塔形、支柱、柱形***、或各種大小的其它突起，或從圓盤150向上延伸以支撐工件101的以上項的組合。工件101可以用夾緊力Fc而固定到靜電吸盤122，如上文所論述。在一個實施例中，檯面168被配置為在工件101上施加最小的力，以便不劃傷或損壞工件101的背面。FIG. 5 is a partial cross-sectional view of the electrostatic chuck 122 on which the workpiece 101 is disposed. Shown are the disc 150 and table 168 of the electrostatic chuck 122 proximate the sensor assembly 190 . The mesa 168 is disposed adjacent one or more recesses 164 . The table 168 may include square or rectangular blocks, cones, wedges, pyramids, pillars, cylindrical bumps, or other protrusions of various sizes, or combinations of the above extending upwardly from the disc 150 to support the workpiece 101 . The workpiece 101 may be secured to the electrostatic chuck 122 with a clamping force Fc, as discussed above. In one embodiment, table 168 is configured to exert minimal force on workpiece 101 so as not to scratch or damage the backside of workpiece 101 .

相鄰檯面168可以具有由距離560隔開的中心。在一個實施例中，距離560可以在約0.3英寸至約0.5英寸的範圍內。相鄰檯面168可以各自具有約三（3）微米至約七百（700）微米的高度。相鄰檯面168可以各自具有約五百（500）微米至約五千（5000）微米的寬度。凹陷164可以具有約（2）毫米至約十（10）毫米的寬度。檯面168和凹陷164允許靜電吸盤122支撐工件101，同時另外提供工件101的熱管理。Adjacent mesas 168 may have centers separated by a distance 560 . In one embodiment, distance 560 may range from about 0.3 inches to about 0.5 inches. Adjacent mesas 168 may each have a height from about three (3) microns to about seven hundred (700) microns. Adjacent mesas 168 may each have a width from about five hundred (500) microns to about five thousand (5000) microns. The depression 164 may have a width of about (2) millimeters to about ten (10) millimeters. The deck 168 and recess 164 allow the electrostatic chuck 122 to support the workpiece 101 while additionally providing thermal management of the workpiece 101 .

檯面168具有支撐工件101的頂表面542。頂表面542一般限定基準表面520，當不施加來自靜電吸盤122的夾緊力Fc時，工件101擱置在基準表面520上。基準表面520可以用作參考點，可以經由感測器280從該參考點量測工件101的偏轉。在一個實施例中，當夾持力施加到工件101時，由檯面168向工件101施加相反的接觸壓力。Table 168 has a top surface 542 that supports workpiece 101 . Top surface 542 generally defines a reference surface 520 on which workpiece 101 rests when clamping force Fc from electrostatic chuck 122 is not applied. Reference surface 520 may serve as a reference point from which deflection of workpiece 101 may be measured via sensor 280 . In one embodiment, when clamping force is applied to the workpiece 101 , opposing contact pressure is exerted by the table 168 on the workpiece 101 .

一旦施加夾緊力Fc，工件101可以固定到靜電吸盤122。夾緊力Fc將工件101拉向檯面168，並與檯面168的接觸一起來防止工件101相對於靜電吸盤122的移動。夾緊力Fc在靜電吸盤122的整個工件支撐表面172上可能是不相同的或甚至基本上不類似。夾緊力Fc的可變化性可歸因於圓盤150的變化，圓盤150的這種變化是由於材料沉積、由清潔和蝕刻造成的腐蝕、以及磨損等因素而造成的。另外，夾緊力Fc可以在工件支撐表面172上進行有目的的區分，諸如在分區靜電吸盤配置中。Once clamping force Fc is applied, workpiece 101 can be secured to electrostatic chuck 122 . The clamping force Fc pulls the workpiece 101 toward the table 168 , and together with the contact with the table 168 prevents the workpiece 101 from moving relative to the electrostatic chuck 122 . The clamping force Fc may not be the same or even substantially similar across the workpiece support surface 172 of the electrostatic chuck 122 . The variability in clamping force Fc can be attributed to changes in disc 150 due to factors such as material deposition, corrosion from cleaning and etching, and wear. Additionally, the clamping force Fc may be purposefully differentiated on the workpiece support surface 172, such as in a zoned electrostatic chuck configuration.

感測器280量測工件101相對於基準表面520的偏轉。為了控制夾緊力Fc，將夾緊電壓施加到靜電吸盤中的電極134。夾緊電壓可以回應於由感測器280量測到的工件101的偏轉而變化。在施加夾緊力Fc時，工件101可以與凹陷164中的幾何平面510對準。偏轉可以指示淨力與夾緊力Fc基本上一致。可以調整量測到的偏轉和夾緊電壓，直到量測到的偏轉落入預定範圍內。例如，可接受的偏轉的預定範圍可以在五百（500）奈米與約兩（2）微米之間。當量測到的偏轉大於約2微米時，可以減小夾緊電壓，直到感測器即時確定偏轉在五百（500）奈米與約兩（2）微米之間。可以利用放置在兩個或兩個以上位置處的感測器組件190來量測偏轉，從而能夠精確地調諧夾緊電壓以匹配相反的力，諸如氣體壓力和接觸壓力。Sensor 280 measures the deflection of workpiece 101 relative to reference surface 520 . To control the clamping force Fc, a clamping voltage is applied to the electrodes 134 in the electrostatic chuck. The clamping voltage may vary in response to the deflection of the workpiece 101 measured by the sensor 280 . When clamping force Fc is applied, workpiece 101 may be aligned with geometric plane 510 in recess 164 . Deflection may indicate that the net force is substantially consistent with the clamping force Fc. The measured deflection and clamping voltage can be adjusted until the measured deflection falls within a predetermined range. For example, the predetermined range of acceptable deflections may be between five hundred (500) nanometers and approximately two (2) microns. When the measured deflection is greater than approximately 2 microns, the clamping voltage may be reduced until the sensor instantly determines that the deflection is between five hundred (500) nanometers and approximately two (2) microns. Deflection can be measured using sensor assemblies 190 placed at two or more locations, allowing the clamping voltage to be precisely tuned to match opposing forces, such as gas pressure and contact pressure.

感測器280可以在短時間間隔內量測工件101的偏轉變化。在多個感測器280監測工件101的偏轉並且靜電吸盤122被配備有多個夾緊區的實施例中，控制系統194可以使用來自位於不同的夾緊區中的各個感測器280的資料來控制該特定的夾緊區中的夾緊，以匹配相反的力並最小化夾緊電壓。增加夾持電壓/力將在ESC上和腔室處理環境內產生更多顆粒。例如，已觀察到，對於因大於1μm的顆粒而引起的缺陷，800V的夾持電壓在工件101的背面表面上引入約1392個嵌入顆粒。在該等嵌入顆粒中，其中約21個的大小超過10微米。1000V的夾持電壓在工件101的背面表面上產生約2264個嵌入顆粒。1200V的夾持電壓在工件101的背面表面上產生約3546個嵌入顆粒。而且，約1800V的夾持電壓在工件101的正面表面上產生約5532個嵌入顆粒。此外，在1800V時，大於10μm的嵌入顆粒的數量增加到約140。因此，嵌入顆粒的數量與電壓不成線性關係，並且電壓的每個小的增加產生越來越大的嵌入顆粒。然而，更重要的是大於10um的顆粒的數量，在夾持電壓增加為2倍時，大於10μm的顆粒的數量增加為超過7倍。該等背面顆粒/缺陷可以經由背面氣體洩漏而轉移到工件101的正面上，或在晶圓搬運期間或在晶圓匣（即FOUP）中落在工件101上。背面缺陷也可以在其它半導體製程步驟中轉移。隨著晶粒和特徵大小縮小，這是很重要的，更大尺寸的顆粒將橋接特徵之間的間隙，並且可能導致晶粒無法使用。The sensor 280 can measure the deflection change of the workpiece 101 within a short time interval. In embodiments where multiple sensors 280 monitor deflection of the workpiece 101 and the electrostatic chuck 122 is equipped with multiple clamping zones, the control system 194 may use data from each sensor 280 located in a different clamping zone. to control clamping in that specific clamping zone to match opposing forces and minimize clamping voltage. Increasing clamping voltage/force will produce more particles on the ESC and within the chamber processing environment. For example, it has been observed that for defects caused by particles larger than 1 μm, a clamping voltage of 800 V introduces approximately 1392 embedded particles on the back surface of the workpiece 101. Of the embedded particles, about 21 were larger than 10 microns. A clamping voltage of 1000V produces approximately 2264 embedded particles on the back surface of the workpiece 101. A clamping voltage of 1200V produces approximately 3546 embedded particles on the back surface of the workpiece 101. Furthermore, a clamping voltage of approximately 1800V produced approximately 5532 embedded particles on the front surface of the workpiece 101. Furthermore, the number of embedded particles larger than 10 μm increases to approximately 140 at 1800 V. Therefore, the number of embedded particles is not linearly related to voltage, and each small increase in voltage produces increasingly larger embedded particles. However, more important is the number of particles larger than 10 μm, which increases to more than 7 times when the clamping voltage is increased by a factor of 2. Such backside particles/defects may be transferred to the front side of the workpiece 101 via backside gas leakage, or may fall onto the workpiece 101 during wafer handling or in a wafer pod (ie, FOUP). Backside defects can also be transferred during other semiconductor processing steps. This is important as die and feature sizes shrink, larger sized particles will bridge the gaps between features and may render the die unusable.

因此，為了減少/減弱來自ESC的顆粒，晶圓夾持/解除夾持處理使工件101上的夾持力最小化。因過度夾持工件101造成的矽劃痕產生顆粒，然後可以使顆粒最小化以防止將鬆散顆粒引入工件101的前側特徵中並防止在其上形成缺陷。藉由使因引入背面氣體而造成的力斜升，同時地使因夾持電壓造成的相反的力斜升，可以實現工件101上的該等力的平衡，使得可以將工件101保持到ESC而不導致在背面上的劃痕或將顆粒引入正面中。在一個實施例中，在夾持/解除夾持步驟期間同時地調整He壓力，以最小化晶圓上的夾持力。Therefore, to reduce/attenuate particles from the ESC, the wafer clamping/unclamping process minimizes clamping forces on the workpiece 101. Silicon scratches caused by over-clamping the workpiece 101 produce particles that can then be minimized to prevent the introduction of loose particles into the front side features of the workpiece 101 and the formation of defects thereon. By ramping up the force caused by the introduction of the backside gas and simultaneously ramping up the opposite force caused by the clamping voltage, a balance of these forces on the workpiece 101 can be achieved so that the workpiece 101 can be held to ESC. Does not cause scratches on the back or introduce particles into the front. In one embodiment, the He pressure is adjusted simultaneously during the clamping/unclamping steps to minimize clamping forces on the wafer.

靜電吸盤122可以被配備有多個夾緊區並使用具有感測器280的多個感測器組件190來監測每個夾緊區。或者，靜電吸盤122可以具有夾持力量測裝置。夾持力量測裝置可以提供回饋以控制夾持電壓並最終控制施加到工件101的力的量。熟習該項技術者應理解，適於提供或量化施加的即時力的任何裝置或感測器適於下文參考圖6描述的方法的實施，以減少工件的過度夾持和因過度夾持而產生的缺陷。The electrostatic chuck 122 may be equipped with multiple clamping zones and use multiple sensor assemblies 190 with sensors 280 to monitor each clamping zone. Alternatively, the electrostatic chuck 122 may have a clamping force measuring device. The clamping force measuring device can provide feedback to control the clamping voltage and ultimately the amount of force applied to the workpiece 101 . It will be understood by those skilled in the art that any device or sensor suitable for providing or quantifying the instantaneous force applied is suitable for implementation of the method described below with reference to FIG. 6 to reduce over-clamping of the workpiece and the occurrence of over-clamping. Defects.

現將一起論述圖6和圖7。圖6是用於最小化設置在基板支撐件上的工件上之力的方法600。圖7是圖6的方法的圖形表示。工件可以經歷將工件推向ESC的靜電力以及沿著檯面的接觸壓力和將工件推離ESC的氣體壓力兩者中的一或多者。方法600以最小值平衡該等力，以將工件101保持到處理腔室中的ESC。Figures 6 and 7 will now be discussed together. Figure 6 is a method 600 for minimizing forces on a workpiece disposed on a substrate support. Figure 7 is a graphical representation of the method of Figure 6. The workpiece may experience electrostatic forces pushing the workpiece toward the ESC as well as one or more of contact pressure along the table and gas pressure pushing the workpiece away from the ESC. Method 600 balances these forces at a minimum to hold the workpiece 101 to the ESC in the processing chamber.

用靜電吸盤夾持晶圓是靜態處理（不發生晶圓的動態運動）。夾持力受到兩個相反的力的抵抗。第一個力是晶圓的暴露於背面氣體的背面區域上的背面氣體壓力。第二個力是晶圓接觸靜電吸盤的區域上的接觸壓力。圖7圖示工件上的相應的力。y軸754描繪了施加到工件的力。x軸752描繪了在工件上的該等力的時序。Clamping the wafer with an electrostatic chuck is a static process (no dynamic movement of the wafer occurs). The clamping force is resisted by two opposing forces. The first force is the backside gas pressure on the backside area of the wafer that is exposed to the backside gas. The second force is the contact pressure on the area of the wafer that contacts the electrostatic chuck. Figure 7 illustrates the corresponding forces on the workpiece. The y-axis 754 depicts the force applied to the workpiece. The x-axis 752 depicts the timing of such forces on the workpiece.

在方法600的方塊610中，將工件放置在電漿處理腔室中的靜電吸盤上。圖7中的第一時間區塊701圖示夾持電壓740被設定在最小夾持電壓742，並且背面氣體壓力760處於最小氣體壓力762。在第二時間區塊702中，工件傳輸到ESC上。這也可以藉由將夾持電壓740斜升到最小力來代替設定最小夾持電壓742來實現。然後，在最小氣體壓力762下接通背面氣體壓力760。採用該後一種方法，最小力將施加到工件。In block 610 of method 600, the workpiece is placed on an electrostatic chuck in a plasma processing chamber. The first time block 701 in FIG. 7 illustrates the clamping voltage 740 being set at the minimum clamping voltage 742 and the backside gas pressure 760 being at the minimum gas pressure 762 . In a second time block 702, the workpiece is transferred to the ESC. This can also be accomplished by ramping up the clamping voltage 740 to the minimum force instead of setting the minimum clamping voltage 742. Then, backside gas pressure 760 is switched on at minimum gas pressure 762 . With this latter method, minimal force will be applied to the workpiece.

在方法600的方塊620中，在處理腔室中轟擊電漿。這對應於圖7中的第三時間區塊703。當夾持工件時，電漿為ESC提供接地。這裡，當轟擊電漿時，可以在ESC上去能DC偏壓補償。In block 620 of method 600, a plasma is bombarded in the processing chamber. This corresponds to the third time block 703 in Figure 7. The plasma provides grounding to the ESC when clamping the workpiece. Here, when bombarding the plasma, DC bias compensation can be enabled on the ESC.

在方法600的方塊630中，監測工件上的偏轉力。可以藉由向控制器提供應力、偏轉或其它合適資訊的感測器來監測力，以確定施加到工件的力。In block 630 of method 600, the deflection force on the workpiece is monitored. Force can be monitored by sensors that provide stress, deflection, or other suitable information to the controller to determine the force applied to the workpiece.

在方法600的方塊640中，夾持電壓740被接通到最小值741。這也可以藉由將夾持電壓740斜升到最小力來代替設定最小夾持電壓741來實現。在方塊650中，背面氣體壓力760接通到最小背面氣體壓力763。這裡，最小背面氣體壓力763可以從最小氣體壓力762增加，或可以不從最小氣體壓力762增加。這是因為一些ESC一直具有流動的最小背面氣體。控制器監測和保持背面氣體壓力760與夾持電壓740之間的偏轉力780。偏轉力780，即背面氣體壓力760與夾持電壓740之間的力的差，可以是適於在處理之前將ESC上的工件的力保持為小於適於處理的偏轉力780的閾值。In block 640 of method 600, clamping voltage 740 is switched to a minimum value 741. This can also be accomplished by ramping up the clamping voltage 740 to the minimum force instead of setting the minimum clamping voltage 741. In block 650, backside gas pressure 760 is switched to minimum backside gas pressure 763. Here, the minimum backside gas pressure 763 may or may not increase from the minimum gas pressure 762 . This is because some ESCs have minimal backside gas flowing all the time. The controller monitors and maintains the deflection force 780 between the backside gas pressure 760 and the clamping voltage 740 . The deflection force 780, ie, the difference in force between the backside gas pressure 760 and the clamping voltage 740, may be a threshold value suitable for maintaining the force of the workpiece on the ESC prior to processing to be less than the deflection force 780 suitable for processing.

在方法600的方塊660中，調整夾持電壓740及/或背面氣體壓力760，使得偏轉力780小於閾值。偏轉力780是在工件上的向下淨力。因此，對於將由ESC保持的工件，由夾持電壓740提供的力大於由背面氣體壓力760提供的力。在一個實施例中，偏轉力在約50mTorr與約50Torr之間，諸如大致晶圓偏轉在10奈米至5微米之間。In block 660 of method 600, clamping voltage 740 and/or backside gas pressure 760 are adjusted such that deflection force 780 is less than a threshold. The deflection force 780 is the net downward force on the workpiece. Therefore, for the workpiece to be held by the ESC, the force provided by the clamping voltage 740 is greater than the force provided by the back gas pressure 760. In one embodiment, the deflection force is between about 50 mTorr and about 50 Torr, such as approximately wafer deflection between 10 nanometers and 5 microns.

在方法600的方塊670中，同時地斜升夾持電壓和背面氣體。這對應於圖7中的第四時間區塊704。可以在電漿的轟擊和工件的夾持之間的力的斜升中引入小的時間延遲。在一個實施例中，在電漿的轟擊和工件的夾持之間提供約200毫秒至約10秒的延遲。In block 670 of method 600, the clamp voltage and backside gas are ramped up simultaneously. This corresponds to the fourth time block 704 in Figure 7. A small time delay can be introduced in the ramp-up of force between the bombardment of the plasma and the clamping of the workpiece. In one embodiment, a delay of about 200 milliseconds to about 10 seconds is provided between impact of the plasma and clamping of the workpiece.

在圖7中所示的第五時間區塊705期間工件被夾持並進行處理。這裡，夾持電壓740現在處於合適的電平749，以用於偏壓電漿、處理工件、及/或將工件靜電地保持到ESC。背面氣體壓力760保持處於高壓769，以平衡夾持電壓740的力並將偏轉力780保持為低於閾值。During the fifth time block 705 shown in Figure 7 the workpiece is clamped and processed. Here, the clamping voltage 740 is now at the appropriate level 749 for biasing the plasma, processing the workpiece, and/or electrostatically holding the workpiece to the ESC. The backside gas pressure 760 is maintained at a high pressure 769 to balance the force of the clamping voltage 740 and to keep the deflection force 780 below the threshold.

因此，用於固定工件的夾持力始終被最小化。夾持電壓越低，刮痕和由刮痕產生的顆粒越少。方法600以較小的力夾持工件，該較小的力剛好足以用供應的背面氣體保持工件。還可以施加安全裕度低得多的額外的夾持力，以確保在處理期間工件被ESC牢固地保持。施加背面冷卻氣體並使其穩定。然後施加額外的力，該額外的力剛好足以在掃描吸盤期間將工件保持在吸盤上的適當位置。這最小化晶圓上的力，以減少由晶圓的靜電夾緊導致的矽損壞。Therefore, the clamping force used to secure the workpiece is always minimized. The lower the clamping voltage, the fewer scratches and particles generated by scratches. Method 600 clamps the workpiece with a small force that is just enough to hold the workpiece with the supplied backside gas. Additional clamping force with a much lower safety margin can also be applied to ensure that the workpiece is firmly held by the ESC during processing. Apply back cooling gas and stabilize. Additional force is then applied, just enough to hold the workpiece in place on the suction cup while it is being scanned. This minimizes forces on the wafer to reduce silicon damage caused by electrostatic clamping of the wafer.

可以提供對夾持力和背面氣體壓力的閉環控制，以最小化夾持力，此舉顯著減少了晶圓劃痕和由劃痕產生的顆粒。包括一或多個偏轉感測器或其它合適的力感測器的控制系統量測並控制由靜電吸盤施加的夾緊力。控制系統可以使用由感測器量測的偏轉來計算工件上的力並調整由靜電吸盤施加到工件的夾緊力。控制系統調整靜電吸盤的夾緊電壓，使得夾緊力達到並保持施加在工件上的目標總夾持力。有利地，可以提供夾持力以將矽晶圓固定到靜電吸盤並使得能夠執行製造操作，同時最小化因在工件上的不必要的高夾緊力而造成的工件損壞。Closed-loop control of clamping force and backside gas pressure is provided to minimize clamping force, which significantly reduces wafer scratches and particles generated by scratches. A control system including one or more deflection sensors or other suitable force sensors measures and controls the clamping force exerted by the electrostatic chuck. The control system can use the deflection measured by the sensor to calculate the force on the workpiece and adjust the clamping force applied to the workpiece by the electrostatic chuck. The control system adjusts the clamping voltage of the electrostatic chuck so that the clamping force reaches and maintains the target total clamping force exerted on the workpiece. Advantageously, clamping force can be provided to secure the silicon wafer to the electrostatic chuck and enable manufacturing operations to be performed while minimizing workpiece damage due to unnecessarily high clamping forces on the workpiece.

方法經擴展以用於對工件解除夾持。在第六時間區塊706期間，夾持電壓740和背面氣體壓力760減小或斜降。一旦背面氣體壓力減小到最小氣體壓力762，在移除夾持電壓740之前提供小的延遲。在第七時間區塊707中，關斷電漿並且工件被解除夾持。感測器還可以説明解除夾持步驟，以提供何時可以安全地移除工件或升起升降桿的即時回饋。在第八時間區塊708中，將工件從ESC和電漿處理腔室移除。應理解，夾持和解除夾持操作基本上類似，但是以相反的順序執行。The method is extended for use in de-clamping workpieces. During the sixth time block 706, the clamping voltage 740 and the backside gas pressure 760 decrease or ramp down. Once the backside gas pressure is reduced to the minimum gas pressure 762, a small delay is provided before the clamping voltage 740 is removed. In a seventh time block 707, the plasma is turned off and the workpiece is unclamped. Sensors can also account for unclamping steps to provide instant feedback when it is safe to remove the workpiece or raise the lift rod. In an eighth time block 708, the workpiece is removed from the ESC and plasma processing chamber. It should be understood that the clamping and unclamping operations are substantially similar, but performed in reverse order.

受益於前述描述和相關附圖中呈現的教示的實施例的熟習該項技術者將想到本文未闡述的許多修改和其它實施例。因此，應理解，說明書和請求項不限於所揭示的特定實施例，並且修改和其它實施例意欲被包括在隨附申請專利範圍的範圍內。實施例意欲覆蓋實施例的修改和變化，只要它們落入隨附申請專利範圍及其等同物的範圍內即可。儘管本文採用特定術語，但是它們僅以一般性和描述性意義而使用，而不是出於限制目的。Many modifications and other embodiments not set forth herein will occur to those skilled in the art having the benefit of the teachings of the embodiments presented in the foregoing description and associated drawings. Therefore, it is to be understood that the specification and claims are not to be limited to the specific embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. The embodiments are intended to cover the modifications and variations of the embodiments provided they come within the scope of the appended claims and their equivalents. Although specific terms are employed herein, they are used in a general and descriptive sense only and not for purposes of limitation.

雖然上述內容針對的是本發明的實施例，但是也可以在不脫離本發明的基本範圍的情況下設計本發明的其它和進一步實施例，並且本發明的範圍由隨附申請專利範圍確定。While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the essential scope of the invention, the scope of which is to be determined by the appended claims.

100‧‧‧電漿處理腔室 101‧‧‧工件 102‧‧‧電漿 104‧‧‧蓋 106‧‧‧腔室主體 108‧‧‧平臺 109‧‧‧升降桿 110‧‧‧波紋管組件 111‧‧‧軸 112‧‧‧支撐軸 113‧‧‧升降機構 114‧‧‧真空系統 117‧‧‧RF電漿電源 118‧‧‧處理氣體供應 120‧‧‧腔室內部容積 122‧‧‧靜電吸盤 126‧‧‧底表面 130‧‧‧基板升降件 132‧‧‧第二升降機構 134‧‧‧電極 140‧‧‧夾持電源 141‧‧‧氣體供應 142‧‧‧流體源 149‧‧‧支撐殼體 150‧‧‧圓盤 151‧‧‧冷卻板 152‧‧‧支撐基部 160‧‧‧冷卻通道 162‧‧‧電絕緣的圓盤基部 164‧‧‧凹陷 168‧‧‧檯面 170‧‧‧基板支撐組件 172‧‧‧整個工件支撐表面 190‧‧‧感測器組件 192‧‧‧控制器 194‧‧‧控制系統 198‧‧‧背面氣體輸送孔洞 210‧‧‧過渡導管 218‧‧‧背面氣體通路 220‧‧‧感測器殼 280‧‧‧感測器 282‧‧‧感測器頭 284‧‧‧通訊連接 298‧‧‧豎直線 396‧‧‧感測器組件 421‧‧‧感測器組件 430‧‧‧內環組 440‧‧‧外環組 500‧‧‧五百 510‧‧‧幾何平面 520‧‧‧基準表面 542‧‧‧頂表面 560‧‧‧距離 600‧‧‧方法 610‧‧‧方塊 620‧‧‧方塊 630‧‧‧方塊 640‧‧‧方塊 650‧‧‧方塊 660‧‧‧方塊 670‧‧‧方塊 700‧‧‧七百 701‧‧‧第一時間區塊 702‧‧‧第二時間區塊 703‧‧‧第三時間區塊 704‧‧‧第四時間區塊 705‧‧‧第五時間區塊 706‧‧‧第六時間區塊 707‧‧‧第七時間區塊 708‧‧‧第八時間區塊 740‧‧‧夾持電壓 741‧‧‧最小值 742‧‧‧最小夾持電壓 749‧‧‧合適的電平 752‧‧‧X軸 754‧‧‧Y軸 760‧‧‧背面氣體壓力 762‧‧‧最小氣體壓力 763‧‧‧最小背面氣體壓力 769‧‧‧高壓 780‧‧‧偏轉力100‧‧‧Plasma Processing Chamber 101‧‧‧Workpiece 102‧‧‧Plasma 104‧‧‧Cover 106‧‧‧Chamber body 108‧‧‧Platform 109‧‧‧Lifting rod 110‧‧‧Corrugated pipe assembly 111‧‧‧Axis 112‧‧‧Support shaft 113‧‧‧Lifting mechanism 114‧‧‧Vacuum system 117‧‧‧RF Plasma Power Supply 118‧‧‧Process gas supply 120‧‧‧Chamber internal volume 122‧‧‧Electrostatic chuck 126‧‧‧Bottom surface 130‧‧‧Substrate lifting parts 132‧‧‧Second lifting mechanism 134‧‧‧Electrode 140‧‧‧Clamping power supply 141‧‧‧Gas supply 142‧‧‧Fluid source 149‧‧‧Support shell 150‧‧‧Disk 151‧‧‧Cooling plate 152‧‧‧Support base 160‧‧‧Cooling channel 162‧‧‧Electrically insulating disc base 164‧‧‧Depression 168‧‧‧Countertop 170‧‧‧Substrate support assembly 172‧‧‧The entire workpiece support surface 190‧‧‧Sensor Assembly 192‧‧‧Controller 194‧‧‧Control system 198‧‧‧Gas delivery hole on the back 210‧‧‧Transition duct 218‧‧‧Back gas passage 220‧‧‧Sensor housing 280‧‧‧Sensor 282‧‧‧Sensor head 284‧‧‧Communication connection 298‧‧‧Vertical line 396‧‧‧Sensor Assembly 421‧‧‧Sensor Assembly 430‧‧‧Inner ring group 440‧‧‧Outer ring group 500‧‧‧five hundred 510‧‧‧Geometric plane 520‧‧‧Reference surface 542‧‧‧Top surface 560‧‧‧distance 600‧‧‧method 610‧‧‧block 620‧‧‧block 630‧‧‧block 640‧‧‧block 650‧‧‧block 660‧‧‧block 670‧‧‧block 700‧‧‧Seven hundred 701‧‧‧First time block 702‧‧‧Second time block 703‧‧‧The third time block 704‧‧‧The fourth time block 705‧‧‧The fifth time block 706‧‧‧The sixth time block 707‧‧‧The seventh time block 708‧‧‧The eighth time block 740‧‧‧Clamping voltage 741‧‧‧minimum 742‧‧‧Minimum clamping voltage 749‧‧‧Appropriate level 752‧‧‧X axis 754‧‧‧Y axis 760‧‧‧Back gas pressure 762‧‧‧Minimum gas pressure 763‧‧‧Minimum back gas pressure 769‧‧‧High pressure 780‧‧‧Deflection force

為了能夠詳細地理解本發明的實施例的上述特徵所用方式，可以參考實施例獲得上文簡要概述的本發明的實施例的更特定的描述，實施例中的一些示出在所附附圖中。然而，將注意，所附附圖僅圖示本發明的典型實施例，並且因此不應視為限制本發明的範圍，因為本發明的實施例可以允許其它等效實施例。In order that the manner in which the above-described features of embodiments of the invention may be characterized may be understood in detail, a more particular description of the embodiments of the invention briefly summarized above may be obtained by reference to the examples, some of which are illustrated in the accompanying drawings . It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

圖1是示例性電漿處理腔室的示意性側視圖，該電漿處理腔室內安裝有基板支撐件。Figure 1 is a schematic side view of an exemplary plasma processing chamber with a substrate support installed therein.

圖2是基板支撐件的局部橫截面等距圖，該基板支撐件具有安裝在背面氣體通孔中的感測器組件。Figure 2 is a partial cross-sectional isometric view of a substrate support having a sensor assembly mounted in a backside gas via.

圖3是基板支撐件的局部橫截面透視視圖，該基板支撐件具有安裝在升降桿中的感測器組件。Figure 3 is a partial cross-sectional perspective view of a substrate support having a sensor assembly mounted in a lift rod.

圖4是基板支撐件的頂平面視圖，圖示感測器組件的各種位置。Figure 4 is a top plan view of the substrate support illustrating various positions of the sensor assembly.

圖5是基板支撐件的局部橫截面視圖，該基板支撐件上設置有工件。Figure 5 is a partial cross-sectional view of a substrate support with a workpiece disposed thereon.

圖6是用於最小化設置在基板支撐件上的工件上之力的方法。Figure 6 is a method for minimizing forces on a workpiece disposed on a substrate support.

圖7是圖6的方法的圖形表示。Figure 7 is a graphical representation of the method of Figure 6.

另外的特徵和優點將在下文詳述中闡述，並且部分地對於熟習該項技術者來說將從該描述中顯而易見，或藉由實踐本文所述的實施例而得以認知，包括下文的詳細表述、申請專利範圍、以及附圖。Additional features and advantages will be set forth in the detailed description that follows, and in part will be apparent to those skilled in the art from the description, or may be learned by practice of the embodiments described herein, including the detailed description that follows. , patent application scope, and drawings.

應理解，前述概述和以下詳述僅是示例性的，並且旨在提供理解請求項的性質和特徵的概要或框架。所附附圖被包括來提供進一步的理解，並且結合在本說明書中並構成本說明書的一部分。附圖圖示一或多個實施例，並且與說明書一起用於解釋各種實施例的原理和操作。It is to be understood that both the foregoing summary and the following detailed description are exemplary only, and are intended to provide an overview or framework for understanding the nature and character of the claims. The accompanying drawings are included to provide a further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate one or more embodiments and, together with the description, serve to explain the principles and operations of the various embodiments.

國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無Domestic storage information (please note in order of storage institution, date and number) without

國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無Overseas storage information (please note in order of storage country, institution, date, and number) without

101‧‧‧工件 101‧‧‧Workpiece

120‧‧‧腔室內部容積 120‧‧‧Chamber internal volume

134‧‧‧電極 134‧‧‧Electrode

140‧‧‧夾持電源 140‧‧‧Clamping power supply

150‧‧‧圓盤 150‧‧‧Disk

164‧‧‧凹陷 164‧‧‧Depression

168‧‧‧檯面 168‧‧‧Countertop

190‧‧‧感測器組件 190‧‧‧Sensor Assembly

192‧‧‧控制器 192‧‧‧Controller

194‧‧‧控制系統 194‧‧‧Control system

280‧‧‧感測器 280‧‧‧Sensor

510‧‧‧幾何平面 510‧‧‧Geometric plane

520‧‧‧基準表面 520‧‧‧Reference surface

542‧‧‧頂表面 542‧‧‧Top surface

560‧‧‧距離 560‧‧‧distance

Claims (11)

一種用於最小化設置在一電漿處理腔室內的一靜電吸盤(ESC)上的一工件上的夾持力的方法，該方法包括以下步驟：將一工件放在一處理腔室中的該ESC上；在該處理腔室內轟擊一電漿；監測該工件上的一偏轉力；以一最小值施加一夾持電壓；以一最小壓力施加一背面氣體壓力；調整該夾持電壓及/或該背面氣體壓力，使得該偏轉力小於一閾值；和同時地斜升該夾持電壓和該背面氣體壓力。 A method for minimizing clamping forces on a workpiece on an electrostatic chuck (ESC) disposed within a plasma processing chamber, the method comprising the steps of placing a workpiece on the ESC in a processing chamber. on the ESC; bombard a plasma in the processing chamber; monitor a deflection force on the workpiece; apply a clamping voltage at a minimum value; apply a backside gas pressure at a minimum pressure; adjust the clamping voltage and/or The backside gas pressure causes the deflection force to be less than a threshold; and simultaneously ramps up the clamping voltage and the backside gas pressure. 如請求項1所述之方法，進一步包括以下步驟：反轉前述步驟以用於解除夾持。 The method of claim 1 further includes the following steps: reversing the aforementioned steps for releasing the clamping. 如請求項1所述之方法，其中由該夾持電壓提供的力的一最小值小於由該背面氣體壓力提供的力的一最小值。 The method of claim 1, wherein a minimum value of the force provided by the clamping voltage is less than a minimum value of the force provided by the backside gas pressure. 如請求項1所述之方法，其中當該工件被夾持時，由該背面氣體壓力提供的力的該值小於由該夾持電壓提供的力的該值。 The method of claim 1, wherein when the workpiece is clamped, the value of the force provided by the backside gas pressure is less than the value of the force provided by the clamping voltage. 如請求項1所述之方法，其中該偏轉力在約 50mTorr至約50Torr之間。 The method of claim 1, wherein the deflection force is approximately Between 50mTorr and approximately 50Torr. 如請求項5所述之方法，其中該偏轉力為約1Torr或更小。 The method of claim 5, wherein the deflection force is about 1 Torr or less. 如請求項1所述之方法，進一步包括以下步驟：在該電漿的該轟擊與夾持該工件之間引入一小的時間延遲。 The method of claim 1, further comprising the step of introducing a small time delay between the bombardment of the plasma and clamping of the workpiece. 如請求項7所述之方法，其中該小的時間延遲在約200毫秒與約10秒之間。 The method of claim 7, wherein the small time delay is between about 200 milliseconds and about 10 seconds. 如請求項1所述之方法，進一步包括以下步驟：提供對該夾持力和該背面氣體壓力的一閉環控制；和回應於該閉環控制而最小化該夾持力。 The method of claim 1, further comprising the steps of: providing a closed-loop control of the clamping force and the backside gas pressure; and minimizing the clamping force in response to the closed-loop control. 如請求項1所述之方法，進一步包括以下步驟：調整對於該ESC的該夾持電壓，使得該夾持力達到一目標總夾持力並保持該目標總夾持力。 The method of claim 1 further includes the following steps: adjusting the clamping voltage for the ESC so that the clamping force reaches a target total clamping force and maintains the target total clamping force. 如請求項1所述之方法，其中以該最小值施加該夾持電壓之步驟進一步包括以下步驟：選擇該夾持電壓以實現一最小力。 The method of claim 1, wherein the step of applying the clamping voltage at the minimum value further includes the step of selecting the clamping voltage to achieve a minimum force.
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