TWI813944B - 主動元件基板及主動元件基板的製造方法 - Google Patents

主動元件基板及主動元件基板的製造方法 Download PDF

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TWI813944B
TWI813944B TW110104720A TW110104720A TWI813944B TW I813944 B TWI813944 B TW I813944B TW 110104720 A TW110104720 A TW 110104720A TW 110104720 A TW110104720 A TW 110104720A TW I813944 B TWI813944 B TW I813944B
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hydrogen atom
atom distribution
distribution region
substrate
concentration
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TW110104720A
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TW202232763A (zh
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黃震鑠
陳國光
薛芷苓
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友達光電股份有限公司
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Priority to CN202111221758.4A priority patent/CN113964187B/zh
Priority to US17/572,662 priority patent/US20220254933A1/en
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Abstract

一種主動元件基板，包括基板、主動元件以及阻隔層。主動元件位於基板上。阻隔層位於主動元件上。阻隔層包括第一氫原子分佈區以及第二氫原子分佈區。第一氫原子分佈區包括氮化矽以及氫原子。第一氫原子分佈區位於第二氫原子分佈區與基板之間。第二氫原子分佈區包括氮化矽以及氫原子。第一氫原子分佈區中之氮原子的濃度小於第二氫原子分佈區中之氮原子的濃度。第一氫原子分佈區中之氫原子之最高濃度大於第二氫原子分佈區中之氫原子之最高濃度。

Description

主動元件基板及主動元件基板的製造方法
本發明是有關於一種主動元件基板，且特別是有關於一種具有阻隔層的主動元件基板及主動元件基板的製造方法。
在現有的電子裝置的製造過程中，半導體材料若接觸到水氣及/或氫氣，可能會導致半導體材料的性質出現變化，進而影響電子裝置的製造良率。舉例來說，薄膜電晶體的半導體層若接觸到氫氣，則半導體層的導電性質可能會被改變，使薄膜電晶體故障。因此，目前亟需一種能避免半導體層接觸到水氣及/或氫氣的方法。
本發明提供一種主動元件基板，能避免水氣以及氫對主動元件造成損傷。
本發明提供一種主動元件基板的製造方法，能避免水氣以及氫對半導體層造成損傷。
本發明的至少一實施例提供一種主動元件基板。主動元件基板包括基板、主動元件以及阻隔層。主動元件位於基板上。阻隔層位於主動元件上。阻隔層包括第一氫原子分佈區以及第二氫原子分佈區。第一氫原子分佈區位於主動元件上。第一氫原子分佈區包括氮化矽以及氫原子。第一氫原子分佈區位於第二氫原子分佈區與基板之間。第二氫原子分佈區包括氮化矽以及氫原子。第一氫原子分佈區中之氮原子的濃度小於第二氫原子分佈區中之氮原子的濃度。第一氫原子分佈區中之氫原子之最高濃度大於第二氫原子分佈區中之氫原子之最高濃度。第一氫原子分佈區之厚度小於或等於第二氫原子分佈區之厚度。
本發明的至少一實施例提供一種主動元件基板。主動元件基板包括基板、主動元件以及阻隔層。主動元件位於基板上，且包括半導體層、第一閘極、源極以及汲極。半導體層位於基板上。第一閘極重疊於半導體層。第一閘極與半導體層之間夾有閘極絕緣層。第一閘極包括鋁、鋁合金或含有鋁層的堆疊層。源極以及汲極電性連接至半導體層。阻隔層位於主動元件上。阻隔層包括氧氮化矽以及氫原子。第一閘極位於該阻隔層與該半導體層之間。
本發明的至少一實施例提供一種主動元件基板的製造方法。主動元件基板的製造方法包括：提供基板；於基板上形成半導體層；以薄膜沉積製程於半導體層上形成阻隔層。阻隔層包括第一氫原子分佈區以及第二氫原子分佈區。第一氫原子分佈區位於半導體層上。第一氫原子分佈區包括氮化矽以及氫原子。第一氫原子分佈區位於第二氫原子分佈區與基板之間。第二氫原子分佈區包括氮化矽以及氫原子。第一氫原子分佈區中之氮原子的濃度小於第二氫原子分佈區中之氮原子的濃度。第一氫原子分佈區中之氫原子之最高濃度大於第二氫原子分佈區中之氫原子之最高濃度。第一氫原子分佈區之厚度小於或等於該第二氫原子分佈區之厚度。
圖1A至圖1D是依照本發明的一實施例的一種主動元件基板的製造方法的剖面示意圖。
請參考圖1A，提供基板100。基板100的材質可為玻璃、石英、有機聚合物、或是不透光/反射材料（例如：導電材料、金屬、晶圓、陶瓷或其他可適用的材料）或是其他可適用的材料。若使用導電材料或金屬時，則在基板100上覆蓋一層絕緣層（未繪示），以避免短路問題。
於基板100上形成半導體層130。在本實施例中，半導體層130的材料包括金屬氧化物。舉例來說，半導體層130的材料包括氧化銦鎵鋅（Indium-Gallium-Zinc Oxide, IGZO）、氧化鋅（ZnO）、氧化錫（SnO）、氧化銦鋅（Indium-Zinc Oxide, IZO）、氧化鎵鋅（Gallium-Zinc Oxide, GZO）、氧化鋅錫（Zinc-Tin Oxide, ZTO）或氧化銦錫（Indium-Tin Oxide, ITO）或其他合適材料。在本實施例中，半導體層130的材料包括氧化銦鎵鋅，且厚度T1為5奈米至100奈米。
在本實施例中，在形成半導體層130之前，於基板100上形成第一導電層110以及第一絕緣層120。第一導電層110為單層或多層結構。
第一導電層110包括遮光結構112、電容電極114以及訊號線116。半導體層130重疊於遮光結構112。第一絕緣層120覆蓋第一導電層110。半導體層130形成於第一絕緣層120上。
形成閘極絕緣層140於半導體層130上。在一些實施例中，閘極絕緣層140包括氮化矽、氧化矽、氮氧化矽（Silicon oxynitride, SiONx）、氧氮化矽（silicon nitride oxide，SiNOx）、氮化鋁、氧化鋁、氧化鉿、金屬氧化物、金屬氮化物、光阻或其他適合材料，其中氮氧化矽（SiONx）中氧的濃度大於氮的濃度，氧氮化矽（SiNOx）中氮的濃度大於氧的濃度。在本實施例中，閘極絕緣層140為氮氧化矽，且厚度為10奈米至500奈米。
形成第二導電層150於閘極絕緣層140上。第二導電層150包括第一閘極152、訊號線154以及訊號線156。第一閘極152重疊於半導體層130。第一閘極152與半導體層130之間夾有閘極絕緣層140。訊號線154透過貫穿第一絕緣層120以及閘極絕緣層140的通孔而電性連接至電容電極114。訊號線156透過貫穿第一絕緣層120以及閘極絕緣層140的通孔而電性連接至訊號線116。第二導電層150為單層或多層結構。第二導電層150的材料包括鋁、鋁合金、鉬鋁合金、鈦鋁合金、鉬鈦鋁合金或含有鋁層的堆疊層。
請參考圖1B，對半導體層130執行摻雜製程P，以於半導體層130中形成摻雜區132、摻雜區136以及通道區134。通道區134位於摻雜區132以及摻雜區136之間。在本實施例中，摻雜製程P為氫電漿處理製程，但本發明不以此為限。在其他實施例中，摻雜製程P為離子佈植製程或其他合適的摻雜製程。在一些實施例中，以第二導電層150為罩幕，對半導體層130執行摻雜製程P，但本發明不以此為限。在其他實施例中，形成其他遮罩（例如光阻），並以其他遮罩為罩幕，對半導體層130執行摻雜製程P。
請參考圖1C，以薄膜沉積製程於半導體層130上形成阻隔層160。在本實施例中，以薄膜沉積製程於第一閘極152、訊號線154、訊號線156以及閘極絕緣層140上形成阻隔層160。薄膜沉積製程包括電漿增強化學氣相沉積（Plasma Enhanced Chemical Vapor Deposition）。
阻隔層160的材料包括氫原子以及氮化矽（SiNx）或氧氮化矽（SiNOx）。在本實施例中，阻隔層160的厚度(厚度T3加上厚度T4)為50奈米至600奈米。在本實施例中，阻隔層160中的氫原子濃度為1E21 atoms/cm 3至5E22 atoms/cm 3，例如1E22 atoms/cm 3至5E22 atoms/cm 3。在本實施例中，阻隔層160中的氮原子濃度為1E21 atoms/cm 3至5E23 atoms/cm 3，例如1E21 atoms/cm 3至1E22 atoms/cm 3。
在一些實施例中，閘極絕緣層140中包含氧原子，因此，部分氧原子有可能會擴散至阻隔層160。在本實施例中，阻隔層160中的氧原子濃度為2E18 atoms/cm 3至5E20 atoms/cm 3，例如2E18 atoms/cm 3至5E19 atoms/cm 3。
圖2A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。圖2B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。圖2C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。需注意的是，圖2A至圖2C用於表示不同元素各自在圖1C之線A-A’處不同深度位置的相對濃度變化，並非用於表示不同元素各自的具體濃度數值。圖2A至圖2C之縱軸的單位例如為at%或atom/cm -3。
請參考圖1C以及圖2A至圖2C，阻隔層160包括第一氫原子分佈區162以及第二氫原子分佈區164。第一氫原子分佈區162位於半導體層130上。在本實施例中，第一氫原子分佈區162接觸並覆蓋第一閘極152、訊號線154、訊號線156以及閘極絕緣層140。第一閘極152位於第一氫原子分佈區162與半導體層130之間。
第二氫原子分佈區164位於第一氫原子分佈區162上，且第一氫原子分佈區162位於第二氫原子分佈區164與基板100之間。第二氫原子分佈區164直接連接第一氫原子分佈區162。第一氫原子分佈區162包括氮化矽以及氫原子。第二氫原子分佈區164包括氮化矽以及氫原子。
在本實施例中，形成第一氫原子分佈區162以及第二氫原子分佈區164的方式包括電漿增強化學氣相沉積。舉例來說，以矽甲烷(Silane，SiH 4)、氨氣(Ammonia，NH 3)以及氮氣(N 2)為原料，形成氧化氮(SiNx)、氫自由基(Hx radical)以及氮氫自由基(NHx radical)以及氮氣。
在本實施例中，第二氫原子分佈區164較第一氫原子分佈區162致密，且沉積第一氫原子分佈區162時生成之氫自由基的解離率較沉積第二氫原子分佈區164時生成之氫自由基的解離率小。在本實施例中，第一氫原子分佈區162中之氮原子的濃度小於第二氫原子分佈區164中之氮原子的濃度。第一氫原子分佈區162中之氫原子之最高濃度大於第二氫原子分佈區164中之氫原子之最高濃度。
在本實施例中，沉積第一氫原子分佈區162時生成之氫自由基的速率較慢，因此能減輕沉積第一氫原子分佈區162的過程中氫擴散到半導體層130內的問題，避免半導體層130的導電性質受到影響。在本實施例中，雖然第一氫原子分佈區162中之氫原子之最高濃度大於第二氫原子分佈區164中之氫原子之最高濃度，但沉積第一氫原子分佈區162時生成之氫原子較沉積第二氫原子分佈區164時生成之氫原子不容易移動，因此能減少氫離子在沉積阻隔層160的過程中擴散至半導體層130。
在一些實施例中，由阻隔層160的氮濃度的平均值定義出第一氫原子分佈區162與第二氫原子分佈區164的界線。換句話說，第一氫原子分佈區162與第二氫原子分佈區164的界線上的氮濃度即等於阻隔層160的氮濃度的平均值。
在一些實施例中，第一氫原子分佈區162中之氫原子之濃度在朝向基板100的方向DR1之分布為先升後降。在一些實施例中，第一氫原子分佈區162中之氮元素之濃度在朝向基板100的方向DR1之分布為逐漸下降。
在一些實施例中，第一氫原子分佈區162中之氫原子濃度為1E22atoms/cm 3至5E22atoms/cm 3，第二氫原子分佈區164中之氫原子濃度為1E21atoms/cm 3至5E22atoms/cm 3。在一些實施例中，閘極絕緣層140中之氫原子濃度為5E20atoms/cm 3至5E21atoms/cm 3。
在一些實施例中，第一氫原子分佈區162中之氮原子濃度為1E21atoms/cm 3至1E22atoms/cm 3，第二氫原子分佈區164中之氮原子濃度為1E21atoms/cm 3至5E23atoms/cm 3。在一些實施例中，閘極絕緣層140中之氮原子濃度為2E18atoms/cm 3至5E20atoms/cm 3。
在本實施例中，第一氫原子分佈區162之厚度T3小於或等於第二氫原子分佈區164之厚度T4。在一些實施例中，厚度T3為10奈米至600奈米，且厚度T4為10奈米至600奈米。
在一些實施例中，第一氫原子分佈區162以及第二氫原子分佈區164例如是於同一道沉積製程中所形成，然而沉積第一氫原子分佈區162時的製程參數不同於沉積第二氫原子分佈區164時的製程參數。舉例來說，沉積第二氫原子分佈區164時的功率大於沉積第一氫原子分佈區162時的功率。在其他實施例中，沉積第一氫原子分佈區162時所用之原料的流量比例不同於第二氫原子分佈區164時所用之原料的流量比例。
在一些實施例中，第一氫原子分佈區162中之氧原子的濃度高於第二氫原子分佈區164中之氧原子的濃度。
在一些實施例中，第一氫原子分佈區162中之氧原子濃度為2E18atoms/cm 3至5E19atoms/cm 3，第二氫原子分佈區164中之氧原子濃度為2E18atoms/cm 3至5E20atoms/cm 3。在一些實施例中，閘極絕緣層140中之氧原子濃度為1E21atoms/cm 3至5E22atoms/cm 3。
請參考圖1D，形成平坦層170於阻隔層160上。平坦層170接觸並覆蓋第二氫原子分佈區164。形成第二絕緣層180於平坦層170上。
形成源極192、汲極194以及訊號線196於第二絕緣層180上。源極192以及汲極194電性連接至半導體層130的摻雜區132、136。訊號線196電性連接至訊號線156。
形成保護層200於源極192、汲極194以及訊號線196上。形成絕緣層210於保護層200上。形成第一電極220於絕緣層210上，且第一電極220電性連接至汲極194。形成畫素定義層230於第一電極220上。形成有機發光半導體層240於畫素定義層230的開口中，且有機發光半導體層240接觸第一電極220。形成第二電極250於有機發光半導體層240上。
在本實施例中，主動元件基板10包括基板100、主動元件T以及阻隔層160。在本實施例中，主動元件T為頂部閘極型薄膜電晶體，但本發明不以此為限。在其他實施例中，主動元件T為底部閘極型薄膜電晶體，舉例來說，第一導電層110的遮光結構112可作為第一閘極。在其他實施例中，主動元件T為雙閘極型薄膜電晶體，舉例來說，第二導電層150包括第一閘極152，且第一導電層110的遮光結構112可作為第二閘極，其中第二閘極重疊於半導體層130，且第二閘極位於基板100與半導體層130之間。
在本實施例中，主動元件基板10適用於有機發光二極體顯示裝置(OLED display)，但本發明不以此為限。在其他實施例中，主動元件基板10適用於微型發光二極體顯示裝置(micro-LED display)、液晶顯示裝置或其他電子裝置。
圖3A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。圖3B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。圖3C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。需注意的是，圖3A至圖3C用於表示不同元素各自在主動元件基板的不同深度位置的相對濃度變化，並非用於表示不同元素各自的具體濃度數值。圖3A至圖3C之縱軸的單位例如為at%或atom/cm -3。
圖3A至圖3C的實施例類似於圖2A至圖2C的實施例，差異在於：圖3A至圖3C的實施例的第一氫原子分佈區162的厚度小於第二氫原子分佈區164的厚度。
圖4是依照本發明的一實施例的一種主動元件基板的剖面示意圖。在此必須說明的是，圖4的實施例沿用圖1A至圖1D的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。
圖4的主動元件基板20與圖1D的主動元件基板10的差異在於：圖4的主動元件基板20的阻隔層160a包括氧氮化矽(SiNOx)以及氫原子。
請參考圖4，在本實施例中，形成阻隔層160a的方式包括電漿增強化學氣相沉積。舉例來說，以矽甲烷(Silane，SiH 4)、氨氣(Ammonia，NH 3)、氧化亞氮(Nitrous oxide，N 2O)以及氮氣(N 2)為原料，形成氧氮化矽、氫自由基(Hx radical)以及氮氫自由基(NHx radical)以及氮氣。在本實施例中，閘極絕緣層140包括氮氧化矽(SiONx)。
在本實施例中，阻隔層160a中的氫原子濃度為5E20 atoms/cm 3至5E21 atoms/cm 3。在本實施例中，阻隔層160a中的氮原子濃度為1E21 atoms/cm 3至5E22 atoms/cm 3。在本實施例中，阻隔層160a中的氧原子濃度為1E21 atoms/cm 3至5E22 atoms/cm 3。
在本實施例中，第一閘極152重疊於半導體層130，且第一閘極152與半導體層130之間夾有閘極絕緣層140。第一閘極152位於阻隔層160a與半導體層130之間。第一閘極152包括鋁、鋁合金或含有鋁層的堆疊層。鋁金屬具有阻隔氫氣的能力，因此，在沉積阻隔層160a的製程中第一閘極152可以保護半導體層130的通道區134，減少氫自由基擴散至半導體層130的通道區134。在本實施例中，的阻隔層160a中的氧氮化矽適用於阻擋水氣。
圖5A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。圖5B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。圖5C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。需注意的是，圖5A至圖5C用於表示不同元素各自在圖4之線A-A’處不同深度位置的相對濃度變化，並非用於表示不同元素各自的具體濃度數值。圖5A至圖5C之縱軸的單位例如為at%或atom/cm -3。
在本實施例中，阻隔層160a中之氮原子的濃度大於閘極絕緣層140中之氮原子的濃度。在本實施例中，阻隔層160a中之氫原子的濃度大於閘極絕緣層140中之氫原子的濃度。在本實施例中，阻隔層160a中之氧原子的濃度小於閘極絕緣層140中之氧原子的濃度。
在本實施例中，阻隔層160a包含氧氮化矽且可作為阻水層，第一閘極152包含鋁且可作為阻氫層，基於此，可以避免水氣以及氫對主動元件T造成損傷。
圖6A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。圖6B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。圖6C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。需注意的是，圖6A至圖6C用於表示不同元素各自在主動元件基板的不同深度位置的相對濃度變化，並非用於表示不同元素各自的具體濃度數值。圖6A至圖6C之縱軸的單位例如為at%或atom/cm -3。
圖6A至圖6C的實施例類似於圖5A至圖5C的實施例，差異在於：圖6A至圖6C的實施例的阻隔層160a包括第一氫原子分佈區162a以及第二氫原子分佈區164a。
請參考圖6A至圖6C，在本實施例中，形成阻隔層160a的方式包括電漿增強化學氣相沉積。舉例來說，以矽甲烷、氨氣、氧化亞氮以及氮氣為原料，形成氧氮化矽(SiNOx)、氫自由基以及氮氫自由基以及氮氣。在本實施例中，閘極絕緣層140包括氮氧化矽(SiONx)。
阻隔層160a中之氮原子的濃度大於閘極絕緣層140中之氮原子的濃度。在本實施例中，阻隔層160a中之氫原子的濃度大於閘極絕緣層140中之氫原子的濃度。在本實施例中，阻隔層160a中之氧原子的濃度小於閘極絕緣層140中之氧原子的濃度。
阻隔層160a包括第一氫原子分佈區162a以及第二氫原子分佈區164a。第一氫原子分佈區162a位於半導體層130上。第一氫原子分佈區162a位於第二氫原子分佈區164a與基板100(繪於圖4)之間。第一氫原子分佈區162a中之氮原子的濃度小於第二氫原子分佈區164a中之氮原子的濃度。第一氫原子分佈區162a中之氫原子的濃度小於第二氫原子分佈區164a中之氫原子的濃度。
在一些實施例中，由阻隔層160a的氮濃度的平均值定義出第一氫原子分佈區162a與第二氫原子分佈區164a的界線。換句話說，第一氫原子分佈區162a與第二氫原子分佈區164a的界線上的氮濃度即等於阻隔層160a的氮濃度的平均值。
在一些實施例中，第一氫原子分佈區162a以及第二氫原子分佈區164a例如是於同一道沉積製程中所形成，然而沉積第一氫原子分佈區162a時的製程參數不同於沉積第二氫原子分佈區164a時的製程參數。舉例來說，沉積第二氫原子分佈區164a時的功率大於沉積第一氫原子分佈區162a時的功率。在其他實施例中，沉積第一氫原子分佈區162a時所用之原料的氨氣流量與氧化亞氮的流量的比值低於第二氫原子分佈區164a時所用之原料的氨氣的流量與氧化亞氮的流量的比值。
在本實施例中，阻隔層160a包含氧氮化矽且可作為阻水層，第一閘極152包含鋁且可作為阻氫層，基於此，可以避免水氣以及氫對主動元件造成損傷。
10、20:主動元件基板 100:基板 110:第一導電層 112:遮光結構 114:電容電極 116、154、156、196:訊號線 120:第一絕緣層 130:半導體層 132、136:摻雜區 134:通道區 140:閘極絕緣層 150:第二導電層 152:第一閘極 160、160a:阻隔層 162、162a:第一氫原子分佈區 164、164a:第二氫原子分佈區 170:平坦層 180:第二絕緣層 192:源極 194:汲極 200:保護層 210:絕緣層 220:第一電極 230:畫素定義層 240:機發光半導體層 250:第二電極 DR1:方向 P:摻雜製程 T:主動元件 T1、T2、T3、T4:厚度
圖1A至圖1D是依照本發明的一實施例的一種主動元件基板的製造方法的剖面示意圖。 圖2A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。 圖2B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。 圖2C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。 圖3A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。 圖3B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。 圖3C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。 圖4是依照本發明的一實施例的一種主動元件基板的剖面示意圖。 圖5A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。 圖5B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。 圖5C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。 圖6A是依照本發明的一實施例的一種主動元件基板的氮原子濃度分佈的示意圖。 圖6B是依照本發明的一實施例的一種主動元件基板的氫原子濃度分佈的示意圖。 圖6C是依照本發明的一實施例的一種主動元件基板的氧原子濃度分佈的示意圖。
10:主動元件基板
100:基板
110:第一導電層
112:遮光結構
114:電容電極
116、154、156、196:訊號線
120:第一絕緣層
130:半導體層
132、136:摻雜區
134:通道區
140:閘極絕緣層
150:第二導電層
152:第一閘極
160:阻隔層
162:第一氫原子分佈區
164:第二氫原子分佈區
170:平坦層
180:第二絕緣層
192:源極
194:汲極
200:保護層
210:絕緣層
220:第一電極
230:畫素定義層
240:機發光半導體層
250:第二電極
T:主動元件

Claims (15)

  1. 一種主動元件基板，包括：一基板；一主動元件，位於該基板上；以及一阻隔層，位於該主動元件上，其中該阻隔層包括：一第一氫原子分佈區，位於該主動元件上，其中該第一氫原子分佈區包括氮化矽以及氫原子；以及一第二氫原子分佈區，該第一氫原子分佈區位於該第二氫原子分佈區與該基板之間，其中該第二氫原子分佈區包括氮化矽以及氫原子，其中該第一氫原子分佈區中之氮原子的濃度小於該第二氫原子分佈區中之氮原子的濃度，其中該第一氫原子分佈區中之氫原子之最高濃度大於該第二氫原子分佈區中之氫原子之最高濃度，其中該第一氫原子分佈區之厚度小於或等於該第二氫原子分佈區之厚度。
  2. 如請求項1所述的主動元件基板，其中該第一氫原子分佈區中之氫原子之濃度在朝向該基板的方向之分布為先升後降。
  3. 如請求項1所述的主動元件基板，其中該第一氫原子分佈區中之氮元素之濃度在朝向該基板的方向之分布為逐漸下降。
  4. 如請求項1所述的主動元件基板，其中該主動元件包括： 一半導體層，位於該基板上；一第一閘極，重疊於該半導體層，且該第一閘極與該半導體層之間夾有一閘極絕緣層，其中該第一氫原子分佈區接觸並覆蓋該閘極絕緣層；以及一源極以及一汲極，電性連接至該半導體層。
  5. 如請求項4所述的主動元件基板，其中該第一閘極的材料包括鋁、鋁合金、鉬鋁合金、鈦鋁合金、鉬鈦鋁合金或含有鋁層的堆疊層，該半導體層的材料包括金屬氧化物。
  6. 如請求項4所述的主動元件基板，其中該第一氫原子分佈區接觸並覆蓋該第一閘極，且該第一閘極位於該第一氫原子分佈區與該半導體層之間。
  7. 如請求項5所述的主動元件基板，其中該主動元件更包括：一第二閘極，重疊於該半導體層，且該第二閘極位於該基板與該半導體層之間。
  8. 如請求項1所述的主動元件基板，更包括：一平坦層，位於該阻隔層上，其中該平坦層接觸並覆蓋該第二氫原子分佈區。
  9. 如請求項1所述的主動元件基板，其中該第二氫原子分佈區的厚度為10奈米至600奈米，且該第一氫原子分佈區的厚度為10奈米至600奈米。
  10. 如請求項1所述的主動元件基板，其中該第二氫原子分佈區較該第一氫原子分佈區致密。
  11. 如請求項1所述的主動元件基板，其中該第二氫原子分佈區直接連接該第一氫原子分佈區。
  12. 一種主動元件基板，包括：一基板；一主動元件，位於該基板上，且包括：一半導體層，位於該基板上；一第一閘極，重疊於該半導體層，且該第一閘極與該半導體層之間夾有一閘極絕緣層，且該第一閘極包括鋁、鋁合金或含有鋁層的堆疊層；以及一源極以及一汲極，電性連接至該半導體層；以及一阻隔層，位於該主動元件上，其中該阻隔層包括氧氮化矽以及氫原子，其中該阻隔層包括一第一氫原子分佈區以及一第二氫原子分佈區，其中該第一氫原子分佈區位於該半導體層上且位於該第二氫原子分佈區與該基板之間，其中該第一氫原子分佈區中之氮原子的濃度小於該第二氫原子分佈區中之氮原子的濃度，其中該第一氫原子分佈區中之氫原子的濃度小於該第二氫原子分佈區中之氫原子的濃度，其中該第一閘極位於該阻隔層與該半導體層之間。
  13. 一種主動元件基板的製造方法，包括：提供一基板； 於該基板上形成一半導體層；以薄膜沉積製程於該半導體層上形成一阻隔層，其中該阻隔層包括：一第一氫原子分佈區，位於該半導體層上，其中該第一氫原子分佈區包括氮化矽以及氫原子；以及一第二氫原子分佈區，該第一氫原子分佈區位於該第二氫原子分佈區與該基板之間，其中該第二氫原子分佈區包括氮化矽以及氫原子，其中該第一氫原子分佈區中之氮原子的濃度小於該第二氫原子分佈區中之氮原子的濃度，其中該第一氫原子分佈區中之氫原子之最高濃度大於該第二氫原子分佈區中之氫原子之最高濃度，其中該第一氫原子分佈區之厚度小於或等於該第二氫原子分佈區之厚度。
  14. 如請求項13所述的主動元件基板的製造方法，其中該薄膜沉積製程包括電漿增強化學氣相沉積，且沉積該第二氫原子分佈區時的功率大於沉積該第一氫原子分佈區時的功率。
  15. 如請求項13所述的主動元件基板的製造方法，更包括：形成一閘極絕緣層於該半導體層上；形成一第一閘極於該閘極絕緣層上；以薄膜沉積製程於該第一閘極以及該閘極絕緣層上形成該阻隔層；以及 形成一源極以及一汲極，該源極以及該汲極電性連接至該半導體層。
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