TWI813129B - Chemical plating tank, chemical plating system and chemical plating method - Google Patents
Chemical plating tank, chemical plating system and chemical plating method Download PDFInfo
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- TWI813129B TWI813129B TW111100622A TW111100622A TWI813129B TW I813129 B TWI813129 B TW I813129B TW 111100622 A TW111100622 A TW 111100622A TW 111100622 A TW111100622 A TW 111100622A TW I813129 B TWI813129 B TW I813129B
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- 238000007747 plating Methods 0.000 title abstract description 59
- 239000000126 substance Substances 0.000 title abstract description 37
- 238000000034 method Methods 0.000 title abstract description 17
- 238000007772 electroless plating Methods 0.000 claims description 105
- 229910052751 metal Inorganic materials 0.000 description 90
- 239000002184 metal Substances 0.000 description 90
- 239000000758 substrate Substances 0.000 description 43
- 239000007788 liquid Substances 0.000 description 27
- 239000002994 raw material Substances 0.000 description 15
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- 239000004065 semiconductor Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 229910021645 metal ion Inorganic materials 0.000 description 1
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Abstract
Description
本申請案係關於化學鍍槽、化學鍍系統及化學鍍方法。This application relates to electroless plating tanks, electroless plating systems and electroless plating methods.
為了提供更多的功能，目前開發在半導體基板封裝中併入兩個以上半導體基板之技術。在此技術中，一半導體基板可能堆疊至另一半導體基板上，為了使兩個半導體基板之信號能彼此溝通，必須在兩個半導體基板間製備接合結構，使上述兩個半導體基板彼此電性連接。期望能製備一種良好的接合結構，使上述半導體基板封裝得以發揮其功能，且同時能達成使半導體基板封裝小型化之目的。In order to provide more functions, technology to incorporate two or more semiconductor substrates into a semiconductor substrate package is currently being developed. In this technology, one semiconductor substrate may be stacked on another semiconductor substrate. In order for the signals of the two semiconductor substrates to communicate with each other, a bonding structure must be prepared between the two semiconductor substrates so that the two semiconductor substrates are electrically connected to each other. . It is expected to prepare a good joint structure so that the above-mentioned semiconductor substrate package can perform its functions and at the same time achieve the purpose of miniaturizing the semiconductor substrate package.
在一些實施例中，本申請案提供一種化學鍍槽。上述化學鍍槽包含槽體及位於上述槽體中之可旋轉承載盤。In some embodiments, the present application provides an electroless plating tank. The above-mentioned electroless plating tank includes a tank body and a rotatable bearing plate located in the above-mentioned tank body.
在一些實施例中，本申請案提供一種化學鍍系統。上述化學鍍系統包含化學鍍槽及一或多個原料槽。上述化學鍍槽包含槽體及位於上述槽體中之可旋轉承載盤。In some embodiments, the present application provides an electroless plating system. The above-mentioned electroless plating system includes an electroless plating tank and one or more raw material tanks. The above-mentioned electroless plating tank includes a tank body and a rotatable bearing plate located in the above-mentioned tank body.
在一些實施例中，本申請案提供一種化學鍍方法。上述方法包含將待鍍物固定於化學鍍槽之可旋轉承載盤上；及將化鍍液注入上述化學鍍槽，以於上述待鍍物上鍍覆金屬層。In some embodiments, the present application provides an electroless plating method. The above method includes fixing the object to be plated on a rotatable bearing plate of an electroless plating tank; and injecting a chemical plating solution into the electroless plating tank to plate a metal layer on the object to be plated.
以下揭示內容提供用於實施所提供之標的物之不同特徵的許多不同實施例或實例。下文描述組件及配置之特定實例。當然，此等僅係實例且並不意圖係限制性的。在本申請案中，在以下描述中，參考第一特徵在第二特徵上方或上之形成或安置可包含第一特徵及第二特徵直接接觸地形成或安置之實施例，且亦可包含額外特徵可形成或安置在第一特徵與第二特徵之間使得第一特徵及第二特徵可並不直接接觸之實施例。另外，本申請案可在各種實例中重複參考標號及/或字母。此重複係出於簡單及清晰之目的，且本身並不規定所論述之各種實施例及/或組態之間的關係。The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and configurations are described below. Of course, these are examples only and are not intended to be limiting. In this application, in the following description, references to a first feature being formed or positioned over or on a second feature may include embodiments in which the first feature and the second feature are formed or positioned in direct contact, and may also include additional Features may be formed or positioned between the first feature and the second feature such that the first feature and the second feature may not be in direct contact. Additionally, this application may repeat reference numbers and/or letters in various instances. This repetition is for simplicity and clarity and does not per se define the relationship between the various embodiments and/or configurations discussed.
下文詳細論述本申請案之實施例。然而，應瞭解，本申請案提供可在多種多樣的特定情境中實施之許多適用的概念。所論述之特定實施例僅僅係說明性的且並不限制本申請案之範疇。Embodiments of the present application are discussed in detail below. It should be appreciated, however, that this application provides many applicable concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative only and do not limit the scope of the application.
本申請案提供一種新穎的化學鍍槽、一種包含上述化學鍍槽之化學鍍系統及一種使用上述化學鍍槽之化學鍍方法。上述化學鍍槽包含槽體及位於該槽體中之可旋轉承載盤。待鍍物置放於可旋轉承載盤上，藉由旋轉上述可旋轉承載盤，可使化鍍液濃度均勻化，使金屬沈積厚度一致，並能藉由離心力使氣體排出。因此，本申請案能在兩個半導體基板間製備結構良好的接合結構，所得接合結構具有良好的信賴度及電氣效能。化學鍍又稱無電鍍，相較於其他先前技術，本申請案利用化學鍍可在相對較低溫度下完成金屬接合結構。This application provides a novel electroless plating tank, an electroless plating system including the above electroless plating tank, and an electroless plating method using the above electroless plating tank. The above-mentioned electroless plating tank includes a tank body and a rotatable bearing plate located in the tank body. The object to be plated is placed on the rotatable bearing plate. By rotating the rotatable bearing plate, the concentration of the plating solution can be uniformized, the thickness of the metal deposition can be consistent, and the gas can be discharged by centrifugal force. Therefore, the present application can prepare a well-structured bonding structure between two semiconductor substrates, and the resulting bonding structure has good reliability and electrical performance. Electroless plating is also called electroless plating. Compared with other prior technologies, this application uses electroless plating to complete the metal joining structure at a relatively low temperature.
圖1及圖2說明根據本申請案之一些實施例之化學鍍槽1的截面圖。1 and 2 illustrate cross-sectional views of an electroless plating tank 1 according to some embodiments of the present application.
參考圖1，化學鍍槽1包含槽體10及位於上述槽體中之可旋轉承載盤11。上述槽體10頂部具有一開口(圖1未標號)，且上述化學鍍槽1另包含蓋體15，上述蓋體15組態於上述槽體10頂部且封閉上述開口。Referring to Figure 1, an electroless plating tank 1 includes a tank body 10 and a rotatable bearing plate 11 located in the tank body. The top of the tank 10 has an opening (not numbered in FIG. 1 ), and the electroless plating tank 1 further includes a cover 15 . The cover 15 is configured on the top of the tank 10 and closes the opening.
上述化學鍍槽1進一步包含一或多個流體連接至槽體10之入口17；及一或多個流體連接至槽體10之出口18。在一些實施例中，上述入口17可組態於槽體10側壁，或如圖1所示組態於蓋體上，化鍍液20可通過入口17注入化學鍍槽1。上述出口18可組態於槽體10側壁或底部，反應後之廢棄化鍍液可通過出口18排出至化學鍍槽1外部。The above-mentioned electroless plating tank 1 further includes one or more inlets 17 fluidly connected to the tank body 10; and one or more outlets 18 fluidly connected to the tank body 10. In some embodiments, the above-mentioned inlet 17 can be configured on the side wall of the tank 10 , or on the cover as shown in FIG. 1 , and the electroless plating solution 20 can be injected into the electroless plating tank 1 through the inlet 17 . The above-mentioned outlet 18 can be configured on the side wall or bottom of the tank 10 , and the waste plating liquid after the reaction can be discharged to the outside of the electroless plating tank 1 through the outlet 18 .
上述可旋轉承載盤11可連續旋轉或脈衝旋轉，並藉由旋轉產生攪拌效果，使化鍍液濃度均勻化，因此可使金屬沈積厚度更為均勻。此外，亦能藉由旋轉產生離心力作用，將雜質或氣體(例如，化學鍍反應產生之氫氣等)排出，避免雜質或氣體殘留在接合結構中，影響接合結構之機械強度及電效能表現。在一些實施例中，上述可旋轉承載盤11之轉速位於0至300 rpm範圍，例如，可為0 rpm、25 rpm、50 rpm、75 rpm、100 rpm、125 rpm、150 rpm、175 rpm、200 rpm、225 rpm、250 rpm、275 rpm或300 rpm。在一些實施例中，上述化學鍍槽1包含轉軸13，上述可旋轉承載盤11藉由上述轉軸13固定於上述槽體中，且藉由上述轉軸13進行連續旋轉或脈衝旋轉。在一些實施例中，上述轉軸13設置於上述可旋轉承載盤11中心處。The above-mentioned rotatable carrying plate 11 can rotate continuously or pulsely, and generates a stirring effect through rotation to uniformize the concentration of the chemical plating solution, thereby making the metal deposition thickness more uniform. In addition, the centrifugal force generated by rotation can also be used to discharge impurities or gases (such as hydrogen generated by electroless plating reactions) to prevent impurities or gases from remaining in the joint structure and affecting the mechanical strength and electrical performance of the joint structure. In some embodiments, the rotation speed of the above-mentioned rotatable bearing plate 11 is in the range of 0 to 300 rpm, for example, it can be 0 rpm, 25 rpm, 50 rpm, 75 rpm, 100 rpm, 125 rpm, 150 rpm, 175 rpm, 200 rpm rpm, 225 rpm, 250 rpm, 275 rpm or 300 rpm. In some embodiments, the above-mentioned electroless plating tank 1 includes a rotating shaft 13. The above-mentioned rotatable carrier plate 11 is fixed in the above-mentioned tank body through the above-mentioned rotating shaft 13, and performs continuous rotation or pulse rotation through the above-mentioned rotating shaft 13. In some embodiments, the above-mentioned rotating shaft 13 is disposed at the center of the above-mentioned rotatable bearing plate 11 .
上述可旋轉承載盤11可為圓盤或其他適當形狀。在一些實施例中，上述可旋轉承載盤11為圓盤，有利於在旋轉時提供穩定的離心力。在一些實施例中，上述可旋轉承載盤11具有底部111及側壁112，上述側壁112組態於上述底部111之邊緣。在一些實施例中，上述側壁112環繞上述底部111之邊緣。在一些實施例中，上述可旋轉承載盤11具有一或多個可用以固定待鍍物21之固持部件16，例如，二個、三個、四個或更多個固持部件16，上述固持部件16可組態於上述可旋轉承載盤11底部111。在一些實施例中，上述固持部件16可視待鍍物尺寸移動，以增進固持效果，並使上述可旋轉承載盤11適用於不同尺寸之待鍍物。The above-mentioned rotatable bearing plate 11 may be a disk or other appropriate shape. In some embodiments, the above-mentioned rotatable bearing plate 11 is a disc, which is beneficial to providing stable centrifugal force during rotation. In some embodiments, the above-mentioned rotatable carrying tray 11 has a bottom 111 and a side wall 112, and the above-mentioned side wall 112 is configured on the edge of the above-mentioned bottom 111. In some embodiments, the side wall 112 surrounds the edge of the bottom 111 . In some embodiments, the above-mentioned rotatable carrying plate 11 has one or more holding parts 16 that can be used to fix the object to be plated 21, for example, two, three, four or more holding parts 16. The above-mentioned holding parts 16 can be configured on the bottom 111 of the above-mentioned rotatable bearing plate 11. In some embodiments, the above-mentioned holding component 16 can be moved according to the size of the object to be plated, so as to enhance the holding effect and make the above-mentioned rotatable bearing plate 11 suitable for different sizes of objects to be plated.
上述可旋承轉載盤11之邊緣包含犧牲電極12。上述犧牲電極12可獨立組態於上述可旋轉承載盤11之邊緣；或組態於上述可旋轉承載盤11之側壁112之內表面上。在一些實施例中，上述犧牲電極12環繞上述可旋轉承載盤11邊緣。上述犧牲電極可使雜質沈積或吸附於其上，避免雜質沈積於槽體之內側壁或游離在化鍍液中影響沈積效果。在一些實施例中，上述犧牲電極12為不易被酸或鹼腐蝕之材料，且可藉由清洗移除沈積或吸附於其上之雜質。在一些實施例中，上述犧牲電極12包含貴金屬(例如，鉑)或不鏽鋼。在一些實施例中，上述犧牲電極12可為網狀或片狀。在一些實施例中，上述犧牲電極12為可拆卸式，當沈積物或吸附物達一定厚度時，可直接更換新的犧牲電極繼續化學鍍反應，同時將使用過的犧牲電極12移除進行清洗，因此能提高清洗及化學鍍效率。在一些實施例中，當上述可旋轉承載盤進行旋轉時，雜質因離心力作用向外移動，可被組態於上述可旋轉承載盤11邊緣之犧牲電極攔截，沈積在上述犧牲電極上，避免污染整個化學鍍槽1。The edge of the rotatable transfer plate 11 includes the sacrificial electrode 12 . The sacrificial electrode 12 can be independently configured on the edge of the rotatable carrier 11 or on the inner surface of the side wall 112 of the rotatable carrier 11 . In some embodiments, the sacrificial electrode 12 surrounds the edge of the rotatable carrier plate 11 . The above-mentioned sacrificial electrode can deposit or adsorb impurities on it, preventing impurities from being deposited on the inner wall of the tank or dissociating in the chemical plating solution and affecting the deposition effect. In some embodiments, the sacrificial electrode 12 is a material that is not easily corroded by acid or alkali, and impurities deposited or adsorbed thereon can be removed by cleaning. In some embodiments, the sacrificial electrode 12 includes noble metal (eg, platinum) or stainless steel. In some embodiments, the sacrificial electrode 12 may be mesh-shaped or sheet-shaped. In some embodiments, the above-mentioned sacrificial electrode 12 is detachable. When the deposits or adsorbents reach a certain thickness, a new sacrificial electrode can be directly replaced to continue the electroless plating reaction, and the used sacrificial electrode 12 can be removed for cleaning. , thus improving cleaning and electroless plating efficiency. In some embodiments, when the above-mentioned rotatable carrier plate rotates, impurities move outward due to centrifugal force and can be intercepted by the sacrificial electrode configured on the edge of the above-mentioned rotatable carrier plate 11 and deposited on the above-mentioned sacrificial electrode to avoid contamination. The entire electroless plating tank 1.
在一些實施例中，上述可旋轉承載盤11相對於水平方向具有一傾斜角，因此可藉由重力，使氣體自化學鍍反應處排出，避免氣體殘留在接合結構中。在一些實施例中，上述傾斜角大於0°且不大於60°，例如可為3°、5°、10°、15°、20°、25°、30°、35°、40°、45°、50°、55°或60°。在一些實施例中，藉由使化學鍍槽1底部相對於水平方向具有一傾斜角，可使上述可旋轉承載盤11具有上述傾斜角。例如，在如圖2所示之一些實施例中，上述可旋轉承載盤11經組態鄰近於化學鍍槽1底部，且實質上平行於化學鍍槽1底部，化學鍍槽1底部及上述可旋轉承載盤11相對於水平方向具有傾斜角θ。In some embodiments, the above-mentioned rotatable carrier plate 11 has an inclination angle relative to the horizontal direction, so that gas can be discharged from the electroless plating reaction site by gravity to avoid gas remaining in the joint structure. In some embodiments, the above-mentioned tilt angle is greater than 0° and not greater than 60°, for example, it can be 3°, 5°, 10°, 15°, 20°, 25°, 30°, 35°, 40°, 45° , 50°, 55° or 60°. In some embodiments, by making the bottom of the electroless plating tank 1 have an inclination angle relative to the horizontal direction, the above-mentioned rotatable carrier plate 11 can have the above-mentioned inclination angle. For example, in some embodiments as shown in FIG. 2 , the above-mentioned rotatable bearing plate 11 is configured adjacent to the bottom of the electroless plating tank 1 and is substantially parallel to the bottom of the electroless plating tank 1 . The rotating carrier plate 11 has an inclination angle θ with respect to the horizontal direction.
在一些實施例中，藉由使上述可旋轉承載盤11旋轉及使上述可旋轉承載盤11相對於水平方向具有一傾斜角，可藉由離心力及重力協同作用，增進氣體排出效果。In some embodiments, by rotating the rotatable bearing plate 11 and having the rotatable bearing plate 11 have an inclination angle relative to the horizontal direction, the gas discharge effect can be enhanced through the synergistic effect of centrifugal force and gravity.
圖3說明根據本申請案之一些實施例之化學鍍系統3的示意圖。Figure 3 illustrates a schematic diagram of an electroless plating system 3 according to some embodiments of the present application.
參考圖3，上述化學鍍系統3包含化學鍍槽1及一或多個原料槽(例如，31、32、33及34)。上述一或多個原料槽流體連接至上述化學鍍槽1，且可獨立操作將儲存於上述原料槽中之化鍍液注入化學鍍槽1。在一些實施例中，上述一或多個原料槽可選自無電鍍銅(electroless copper)集液槽31、無電鍍鎳(electroless nickel)集液槽32、無電鍍金(electroless gold)集液槽33及無電鍍銀(electroless silver)集液槽34中之一或多種，但不以此為限。上述無電鍍銅集液槽31、無電鍍鎳集液槽32、無電鍍金集液槽33及無電鍍銀集液槽34可提供各別化鍍液。在待鍍物上沈積銅、鎳、金或銀等金屬，並藉由所沈積之銅、鎳、金或銀等金屬使待鍍物上相對的兩個金屬結構接合在一起，形成接合結構，提供待鍍物上、下側之電連接。Referring to Figure 3, the above-mentioned electroless plating system 3 includes an electroless plating tank 1 and one or more raw material tanks (for example, 31, 32, 33 and 34). The above-mentioned one or more raw material tanks are fluidly connected to the above-mentioned electroless plating tank 1, and can be independently operated to inject the electroless plating liquid stored in the above-mentioned raw material tanks into the electroless plating tank 1. In some embodiments, the one or more raw material tanks may be selected from the group consisting of electroless copper tank 31, electroless nickel tank 32, and electroless gold tank. 33 and one or more of the electroless silver collecting tank 34, but is not limited to this. The above-mentioned electroless copper plating liquid collecting tank 31, electroless nickel plating liquid collecting tank 32, electroless gold plating liquid collecting tank 33 and electroless silver plating liquid collecting tank 34 can provide individualized plating liquids. Deposit metals such as copper, nickel, gold or silver on the object to be plated, and use the deposited copper, nickel, gold or silver to join two opposite metal structures on the object to be plated to form a joint structure. Provides electrical connections between the upper and lower sides of the object to be plated.
在一些實施例中，上述化學鍍系統3可進一步包含廢液收集槽35及清洗液槽36。上述原料槽31、32、33及34及清洗液槽36通過管道連接至化學鍍槽1之入口17。在一些實施例中，可在上述原料槽及清洗液槽與化學鍍槽1之入口17之間組態一或多個閥25 (或多項閥)，藉由閥25之開關切換，可將特定化鍍液引入化學鍍槽進行化學鍍反應，或將清洗液(如去離子水)引入管道或化學鍍槽進行清洗。在一些實施例中，可依序使用二種或二種以上化鍍液進行化學鍍反應，並在更化化鍍液之前，將清洗液引入化學鍍槽進行清洗，避免不同化鍍液之間造成污染。此外，在一些實施例中，可在上述原料槽及清洗液槽與化學鍍槽1之入口17之間組態一或多個過濾裝置(圖3未顯示)，以在化鍍液注入化學鍍槽1之前移除化鍍液中之雜質。上述廢液收集槽35通過管道連接至化學鍍槽1之出口18，用以收集廢棄化鍍液。In some embodiments, the above-mentioned electroless plating system 3 may further include a waste liquid collection tank 35 and a cleaning liquid tank 36 . The above-mentioned raw material tanks 31, 32, 33 and 34 and the cleaning liquid tank 36 are connected to the inlet 17 of the electroless plating tank 1 through pipelines. In some embodiments, one or more valves 25 (or multiple valves) can be configured between the above-mentioned raw material tank and cleaning liquid tank and the inlet 17 of the electroless plating tank 1. By switching the valve 25, a specific valve can be switched. The chemical plating solution is introduced into the chemical plating tank for chemical plating reaction, or the cleaning solution (such as deionized water) is introduced into the pipeline or chemical plating tank for cleaning. In some embodiments, two or more electroless plating solutions can be used sequentially to perform electroless plating reactions, and before changing the electroplating solutions, the cleaning solution is introduced into the electroless plating tank for cleaning to avoid differences between different electroplating solutions. create pollution. In addition, in some embodiments, one or more filtering devices (not shown in FIG. 3 ) can be configured between the above-mentioned raw material tank and cleaning liquid tank and the inlet 17 of the electroless plating tank 1 to inject the electroless plating liquid into the electroless plating tank. Remove impurities from the chemical plating solution before tank 1. The above-mentioned waste liquid collection tank 35 is connected to the outlet 18 of the electroless plating tank 1 through a pipeline for collecting waste plating liquid.
在一些實施例中，上述化學鍍系統3可進一步包含壓力控制裝置26。在一些實施例中，上述壓力控制裝置26可於化學鍍槽中提供低壓環境。在一些實施例中，上述壓力控制裝置26為真空泵浦。低壓環境可促使化學鍍槽中之化鍍液由各個方向流向待鍍物21，因此所得到之鍍覆金屬層厚度更為均勻。此外，亦能藉由上述壓力控制裝置(如真空泵浦)將化學鍍反應產生之氣體移除，甚或自化學鍍槽排出，因此，可進一步避免氣體殘留在接合結構中，影響接合結構之機械強度及電效能表現。In some embodiments, the above-mentioned electroless plating system 3 may further include a pressure control device 26 . In some embodiments, the pressure control device 26 can provide a low-pressure environment in the electroless plating tank. In some embodiments, the pressure control device 26 is a vacuum pump. The low-pressure environment can promote the electroless plating liquid in the electroless plating tank to flow toward the object 21 to be plated from all directions, so the thickness of the obtained plated metal layer is more uniform. In addition, the gas generated by the electroless plating reaction can also be removed by the above-mentioned pressure control device (such as a vacuum pump), or even discharged from the electroless plating tank. Therefore, it is possible to further prevent gas from remaining in the joint structure and affecting the mechanical strength of the joint structure. and electrical performance.
在一些實施例中，上述化學鍍系統3可進一步包含控制裝置37、盛液盤38、流量計39a、壓力計39b及其他適當裝置。上述控制裝置37可獨立控制或設定各個原料槽及化學鍍槽之溫度、化鍍液流速及可旋轉承載盤之轉速等等。在一些實施例中，上述控制裝置37為電控箱。上述流量計39a可組態在任何適當位置(例如，組態在入口17，或組態在連接至各個原料槽之個別管道上)。上述壓力計39b可組態在任何適當位置，以監測化學鍍槽內部之壓力。上述盛液盤38可組態在化學鍍槽1、原料槽31、32、33及34及清洗液槽36下方，避免漏液污染工作環境。In some embodiments, the above-mentioned electroless plating system 3 may further include a control device 37, a liquid tray 38, a flow meter 39a, a pressure meter 39b and other appropriate devices. The above-mentioned control device 37 can independently control or set the temperature of each raw material tank and the chemical plating tank, the flow rate of the chemical plating solution, the rotation speed of the rotatable carrier plate, etc. In some embodiments, the above-mentioned control device 37 is an electric control box. The above-mentioned flow meter 39a can be configured at any suitable location (for example, configured at the inlet 17, or configured on an individual pipe connected to each raw material tank). The above-mentioned pressure gauge 39b can be configured at any appropriate position to monitor the pressure inside the electroless plating tank. The above-mentioned liquid tray 38 can be configured below the chemical plating tank 1, the raw material tanks 31, 32, 33 and 34 and the cleaning liquid tank 36 to avoid liquid leakage from contaminating the working environment.
圖4、圖5、圖6及圖7說明根據本申請案之一些實施例之化學鍍方法之各個階段。以下以圖4、圖5、圖6及圖7，配合圖1，進行說明。Figures 4, 5, 6, and 7 illustrate various stages of an electroless plating method according to some embodiments of the present application. The following description will be given with reference to Figure 4, Figure 5, Figure 6 and Figure 7, together with Figure 1.
圖4及圖5說明待鍍物21之製備。Figures 4 and 5 illustrate the preparation of the object 21 to be plated.
參考圖4，提供第一基板40。上述第一基板40具有第一圖案化金屬層41。上述第一圖案化金屬層41包含電連接結構(例如，金屬墊、金屬柱或金屬凸塊)Referring to Figure 4, a first substrate 40 is provided. The first substrate 40 has a first patterned metal layer 41 . The above-mentioned first patterned metal layer 41 includes electrical connection structures (for example, metal pads, metal pillars or metal bumps)
參考圖5，提供第二基板50。上述第二基板50具有第二圖案化金屬層51，上述第二圖案化金屬層51具有與上述第一圖案化金屬層41相對應之電連接結構(例如，金屬墊、金屬柱或金屬凸塊)。將上述第二基板50設置於上述第一基板40上方，使上述第二圖案化金屬層51朝向上述第一圖案化金屬層41，並使上述第一圖案化金屬層第二圖案化金屬層41之電連接結構與上述第二圖案化金屬層51之電連接結構相對應。於上述第一基板及上述第二基板之間設置一或多個間隔物55，使上述第一圖案化金屬層41不接觸上述第二圖案化金屬層51 (即，上述第一圖案化金屬層41之電連接結構之上表面與上述第二圖案化金屬層51之電連接結構之下表面之間具有一距離)，完成待鍍物21之製備。藉由調整間隔物55之高度，可調控上述第二圖案化金屬層51及上述第一圖案化金屬層41兩相對應之電連接結構之間的距離。Referring to Figure 5, a second substrate 50 is provided. The second substrate 50 has a second patterned metal layer 51, and the second patterned metal layer 51 has an electrical connection structure (for example, a metal pad, a metal pillar or a metal bump) corresponding to the first patterned metal layer 41. ). The second substrate 50 is disposed above the first substrate 40 so that the second patterned metal layer 51 faces the first patterned metal layer 41 and the first patterned metal layer and the second patterned metal layer 41 The electrical connection structure corresponds to the electrical connection structure of the second patterned metal layer 51 described above. One or more spacers 55 are disposed between the first substrate and the second substrate so that the first patterned metal layer 41 does not contact the second patterned metal layer 51 (i.e., the first patterned metal layer There is a distance between the upper surface of the electrical connection structure of 41 and the lower surface of the electrical connection structure of the second patterned metal layer 51) to complete the preparation of the object to be plated 21. By adjusting the height of the spacer 55, the distance between the two corresponding electrical connection structures of the second patterned metal layer 51 and the first patterned metal layer 41 can be adjusted.
在下文中，為便於說明，符號41及51可用於係指第一圖案化金屬層及第二圖案化金屬層，或係指第一圖案化金屬層之電連接結構及第二圖案化金屬層之電連接結構。In the following, for convenience of explanation, symbols 41 and 51 may be used to refer to the first patterned metal layer and the second patterned metal layer, or to refer to the electrical connection structure of the first patterned metal layer and the second patterned metal layer. Electrical connection structure.
接著，參考圖1，將待鍍物21固定於化學鍍槽1之可旋轉承載盤11上；及將化鍍液20注入上述化學鍍槽1，使化鍍液20在待鍍物21上進行化學鍍反應，藉由化學鍍(即，無電鍍)於上述待鍍物21上鍍覆金屬層(參考圖6，化鍍金屬層64及65)。Next, referring to Figure 1, the object 21 to be plated is fixed on the rotatable bearing plate 11 of the electroless plating tank 1; and the chemical plating solution 20 is injected into the above-mentioned electroless plating tank 1, so that the chemical plating solution 20 is carried out on the object 21 to be plated. In the electroless plating reaction, a metal layer is plated on the object 21 to be plated (refer to FIG. 6 , electroless metal layers 64 and 65 ) through electroless plating (ie, electroless plating).
參考圖6，化學鍍反應可在待鍍物21部分或完全地浸漬於化鍍液20後開始，此時化鍍液中之金屬離子開始沈積在上述第一圖案化金屬層之電連接結構41之頂部及側壁形成化鍍金屬層64，以及沈積在上述第二圖案化金屬層之電連接結構51之底部及側壁形成化鍍金屬層65。上述化鍍金屬層64及上述化鍍金屬層65隨著時間逐漸增厚，最終連接在一起，並與第一圖案化金屬層之電連接結構及第二圖案化金屬層之電連接結構41及51一起形成接合結構100，上述第一基板40可藉由上述接合結構100電性連接至上述第二基板50。化鍍金屬層64及化鍍金屬層65係由相同材料所構成。在一些實施例中，化鍍金屬層64及化鍍金屬層65連接處存在界面。在一些實施例中，化鍍金屬層64及化鍍金屬層65連接處無界面存在或僅存在不明顯界面。在一些實施例中，上述接合結構由金屬所構成，因此又可稱為金屬接合結構；在一些實施例中，上述接合結構為兩個或多個半導體基板間之互連結構，因此又可稱為半導體接合結構。Referring to Figure 6, the electroless plating reaction can start after the object 21 to be plated is partially or completely immersed in the electroless plating solution 20. At this time, the metal ions in the electroless plating solution begin to deposit on the electrical connection structure 41 of the first patterned metal layer. An electroless metal layer 64 is formed on the top and side walls of the second patterned metal layer, and an electroless metal layer 65 is formed on the bottom and side walls of the electrical connection structure 51 deposited on the second patterned metal layer. The above-mentioned electroless metal plating layer 64 and the above-mentioned electroless metal plating layer 65 gradually thicken over time, and are finally connected together, and are connected with the electrical connection structure of the first patterned metal layer and the electrical connection structure 41 of the second patterned metal layer. 51 together form a bonding structure 100, and the first substrate 40 can be electrically connected to the second substrate 50 through the bonding structure 100. The electroless metal plating layer 64 and the electroless metal plating layer 65 are made of the same material. In some embodiments, an interface exists at the connection between the electroless metal layer 64 and the electroless metal layer 65 . In some embodiments, there is no interface or only an insignificant interface at the connection between the electroless metal layer 64 and the electroless metal layer 65 . In some embodiments, the above-mentioned bonding structure is made of metal, so it can also be called a metal bonding structure; in some embodiments, the above-mentioned bonding structure is an interconnection structure between two or more semiconductor substrates, so it can also be called a metal bonding structure. It is a semiconductor bonding structure.
在一些實施例中，上述第一基板40可為晶圓或晶片。在一些實施例中，上述第二基板50可為晶圓或晶片。舉例而言，圖5及圖6所示之待鍍物21包含第一基板40及第二基板50，上述第一基板40及上述第二基板50皆為晶圓。In some embodiments, the first substrate 40 may be a wafer or a wafer. In some embodiments, the second substrate 50 may be a wafer or a wafer. For example, the object 21 shown in FIGS. 5 and 6 includes a first substrate 40 and a second substrate 50 , and both the first substrate 40 and the second substrate 50 are wafers.
圖7說明相對於圖6的根據本申請案之一些實施例之已完成鍍覆之待鍍物21'。圖7所示之待鍍物21'具有與圖6相似之結構，然而，在圖7所示之待鍍物21'中，上述第一基板40為晶圓，上述第二基板50a及50b為晶片。Figure 7 illustrates a plated object 21' relative to Figure 6 according to some embodiments of the present application. The object to be plated 21' shown in Figure 7 has a similar structure to that of Figure 6. However, in the object to be plated 21' shown in Figure 7, the first substrate 40 is a wafer, and the second substrates 50a and 50b are wafer.
可在完成如圖6或圖7所示之接合結構100後，進行切單。After the joint structure 100 shown in Figure 6 or Figure 7 is completed, individual cutting can be performed.
圖8說明根據本申請案之一些實施例之接合結構200。接合結構200包含上下對應之電連接結構41及51；個別鍍覆於上述電連接結構41及51之第一化鍍金屬層64及65；及個別鍍覆於上述第一化鍍金屬層64及65之第二化鍍金屬層66及66'。第二化鍍金屬層66及66'連接在一起(即，第二化鍍金屬層66之上表面與第二化鍍金屬層66'之下表面相接或共面)。第二化鍍金屬層及第一化鍍金屬層係由不同材料所構成。在一些實施例中，可依序使用不同化鍍液製備接合結構200，例如，可先將第一化鍍液注入化學鍍槽，以於上述第一圖案化金屬層之電連接結構41及上述第二圖案化金屬層之電連接結構51上分別鍍覆第一化鍍金屬層64及65；然後將第二化鍍液注入上述化學鍍槽，以於上述第一化鍍金屬層64及65上分別鍍覆第二化鍍金屬層66及66'，第二化鍍金屬層66及66'隨著時間逐漸增厚，最終連接在一起，並與第一化鍍金屬層64及65、第一圖案化金屬層之電連接結構41及第二圖案化金屬層之電連接結構51一起形成接合結構200，使得上述第一基板40可藉由上述接合結構200電性連接至上述第二基板50。Figure 8 illustrates an engagement structure 200 in accordance with some embodiments of the present application. The bonding structure 200 includes upper and lower corresponding electrical connection structures 41 and 51; first electroless metal layers 64 and 65 respectively plated on the above electrical connection structures 41 and 51; and respectively plated on the above first electroless metal layers 64 and 51. The second metallization layer 66 and 66' of 65. The second metallization layers 66 and 66' are connected together (that is, the upper surface of the second metallization layer 66 and the lower surface of the second metallization layer 66' are connected or coplanar). The second electroless metal plating layer and the first electroless metal plating layer are composed of different materials. In some embodiments, different plating solutions can be used to prepare the joint structure 200 in sequence. For example, the first plating solution can be first injected into an electroless plating bath to connect the electrical connection structure 41 of the first patterned metal layer and the above-mentioned The first chemical plating metal layers 64 and 65 are respectively plated on the electrical connection structure 51 of the second patterned metal layer; then the second chemical plating solution is injected into the above-mentioned chemical plating tank to coat the above-mentioned first chemical plating metal layers 64 and 65 The second metallization layers 66 and 66' are respectively plated on them. The second metallization layers 66 and 66' gradually thicken over time, and are finally connected together, and are connected with the first metallization layers 64 and 65, and the second metallization layers 66 and 66'. The electrical connection structure 41 of a patterned metal layer and the electrical connection structure 51 of the second patterned metal layer together form a bonding structure 200, so that the first substrate 40 can be electrically connected to the second substrate 50 through the bonding structure 200. .
使用不同化鍍液製備具有二個或多個不同化鍍金屬層之接合結構，可使接合結構兼具多項優點(更優異的效能表現、相對較低的成本等)。例如，金具有優異的抗氧化能力且優異的電效能，但是成本昂貴且沈積速度慢，因此，在一些實施例中，可先利用含有便宜且沈積速率快的金屬之第一化鍍液(例如，銅)進行第一次化學鍍，在電連接結構41及51上沈積第一化鍍金屬層64及65，當第一化鍍金屬層64及65達一定沈積厚度後，切換至含有金之第二化鍍液進行第二次化學鍍，在第一化鍍金屬層64及65上沈積第二化鍍金屬層66及66'，完成上述接合結構。藉此，可節省時間及成本，且所得接合結構具有優異的電效能及抗氧化能力。Using different chemical plating solutions to prepare joint structures with two or more different chemical plating metal layers can make the joint structure have multiple advantages (better performance, relatively lower cost, etc.). For example, gold has excellent oxidation resistance and excellent electrical performance, but is expensive and has a slow deposition rate. Therefore, in some embodiments, a first plating solution containing a cheap and fast deposition rate metal (such as , copper) for the first electroless plating, depositing first electroless metal layers 64 and 65 on the electrical connection structures 41 and 51. When the first electroless metal layers 64 and 65 reach a certain deposition thickness, switch to gold-containing ones. The second electroless plating solution performs a second electroless plating, and deposits second electroplated metal layers 66 and 66' on the first electroplated metal layers 64 and 65 to complete the above-mentioned joint structure. In this way, time and cost can be saved, and the resulting joint structure has excellent electrical performance and oxidation resistance.
圖9說明根據本申請案之一些實施例之接合結構。使用根據本申請案之化學鍍槽、化學鍍系統及化學鍍方法，可於兩個基板之間提供多個化鍍金屬層厚度均勻的接合結構，且所得接合結構具有較少的雜質及殘留氣體。如圖9所示，第二基板50設置於第一基板40上方，第一基板40具有相鄰的電連接結構411及412，第二基板50具有相鄰的電連接結構511及512。兩個相鄰的電連接結構(411及412，511及512)之距離為D1。電連接結構411對應至電連接結構511，電連接結構412對應至電連接結構512。兩個相對的電連接結構(411及511，412及512)之距離為H。第一組電連接結構411及511上分別沈積化鍍金屬層641及651，厚度為T1。第二組電連接結構412及512上分別沈積化鍍金屬層642及652，厚度為T2。由於本申請案之化學鍍槽中設置可旋轉承載盤，待鍍物置放於可旋轉承載盤上，藉由旋轉上述可旋轉承載盤，可使化鍍液濃度均勻化，並可將化學鍍反應產生之氣體排出，故可在不同位置處製備厚度相對一致的化鍍金屬層(T1與T2實質相同，或僅有較小的差異)，且接合結構中兩個相接之化鍍金屬層(641及651，642及652)之間無氣體殘留或僅有微量氣體殘留。Figure 9 illustrates a joint structure according to some embodiments of the present application. Using the electroless plating tank, electroless plating system and electroless plating method according to the present application, a joint structure with a plurality of electroless metal layers with uniform thickness can be provided between two substrates, and the resulting joint structure has less impurities and residual gases. . As shown in FIG. 9 , the second substrate 50 is disposed above the first substrate 40 . The first substrate 40 has adjacent electrical connection structures 411 and 412 , and the second substrate 50 has adjacent electrical connection structures 511 and 512 . The distance between two adjacent electrical connection structures (411 and 412, 511 and 512) is D1. The electrical connection structure 411 corresponds to the electrical connection structure 511 , and the electrical connection structure 412 corresponds to the electrical connection structure 512 . The distance between two opposite electrical connection structures (411 and 511, 412 and 512) is H. Electroless metal plating layers 641 and 651 are respectively deposited on the first group of electrical connection structures 411 and 511, with a thickness of T1. Electroless metallization layers 642 and 652 are respectively deposited on the second group of electrical connection structures 412 and 512, with a thickness of T2. Since the electroless plating tank of the present application is provided with a rotatable bearing plate, and the objects to be plated are placed on the rotatable bearing plate, by rotating the rotatable bearing plate, the concentration of the chemical plating solution can be uniformized, and the electroless plating reaction can be The generated gas is discharged, so electroless metal layers with relatively consistent thickness can be prepared at different positions (T1 and T2 are essentially the same, or have only minor differences), and the two connected electroless metal layers in the joint structure ( No gas remains or only a trace amount of gas remains between 641 and 651, 642 and 652).
圖10及圖11說明根據本申請案之一些比較實施例之接合結構。在圖10及圖11之比較實施例中使用微流道裝置(圖中未顯示)持續注入化鍍液，化鍍液由入口91進入反應槽(圖中未顯示)通過待鍍物之後，朝向出口92流動。然而，此技術流場方向較為單一，導致所鍍覆之化鍍金屬層隨位置不同產生厚度不均勻現象。10 and 11 illustrate joint structures according to some comparative embodiments of the present application. In the comparative examples of FIG. 10 and FIG. 11 , a microfluidic device (not shown in the figure) is used to continuously inject the chemical plating solution. The chemical plating solution enters the reaction tank (not shown in the figure) from the inlet 91 and passes through the object to be plated. Exit 92 flows. However, the flow field direction of this technology is relatively single, resulting in uneven thickness of the plated electroless metal layer depending on the location.
如圖10所示，靠近入口91之化鍍金屬層(641及651)沈積厚度T1大於靠近出口92之化鍍金屬層(642及652)沈積厚度T2且T1與T2具有較大的差異，第一組電連接結構411及511藉由化鍍金屬層641及651完成接合時，第二組電連接結構412及512尚未完成接合，將影響所得半導體裝置結構之電效能表現。為使第二組電連接結構412及512完成接合，必須加長化鍍時間。As shown in Figure 10, the deposition thickness T1 of the electroless metal layer (641 and 651) near the entrance 91 is greater than the deposition thickness T2 of the electroless metal layer (642 and 652) near the outlet 92, and there is a large difference between T1 and T2. When one set of electrical connection structures 411 and 511 is connected through electroless metallization layers 641 and 651, the second set of electrical connection structures 412 and 512 has not yet been connected, which will affect the electrical performance of the resulting semiconductor device structure. In order to complete the bonding of the second group of electrical connection structures 412 and 512, the chemical plating time must be lengthened.
如圖11所示，在加長化鍍時間之後，靠近入口91之化鍍金屬層(641及651)沈積厚度增加至T3，靠近出口92之化鍍金屬層(642及652)沈積厚度增加至T4，然而，若兩個相鄰的電連接結構(411及412，511及512)之距離D1過小，在完成第二組電連接結構412及512之接合時，可能因化鍍金屬層沈積厚度過厚，而使兩個相鄰的電連接結構(411及412，511及512)接合在一起，產生短路風險，信賴度不佳。As shown in Figure 11, after extending the electroless plating time, the deposition thickness of the electroless metal layer (641 and 651) near the inlet 91 increases to T3, and the deposition thickness of the electroless metal layer (642 and 652) near the outlet 92 increases to T4. , however, if the distance D1 between two adjacent electrical connection structures (411 and 412, 511 and 512) is too small, when completing the joining of the second group of electrical connection structures 412 and 512, the deposition thickness of the electroless metal layer may be too high. Thick, so that two adjacent electrical connection structures (411 and 412, 511 and 512) are joined together, causing the risk of short circuit and poor reliability.
相較於圖10及圖11之比較實施例，使用根據本申請案之化學鍍槽、化學鍍系統及化學鍍方法，可於兩個基板之間提供多個化鍍金屬層厚度均勻的接合結構，即使在兩個相鄰的電連接結構(411及412，511及512)間之距離D1降低時(例如，降低至16 µm或更小)，亦未發生兩個相鄰的電連接結構接合在一起的情況。因此，本申請案之化學鍍槽、化學鍍系統及化學鍍方法有助於達成小型化之目標。此外，圖10及圖11之比較實施例使用之微流道裝置僅適用於小尺寸基板之間的金屬對接，不利於量產；本申請案之化學鍍槽、化學鍍系統及化學鍍方法則適用至大尺寸基板之間的金屬對接，有助於量產。Compared with the comparative embodiments of Figures 10 and 11, using the electroless plating tank, electroless plating system and electroless plating method according to the present application can provide a joint structure with a plurality of electroless metal layers with uniform thickness between two substrates. , even when the distance D1 between two adjacent electrical connection structures (411 and 412, 511 and 512) is reduced (for example, reduced to 16 μm or less), the two adjacent electrical connection structures do not join. The situation of being together. Therefore, the electroless plating tank, electroless plating system and electroless plating method of the present application are helpful to achieve the goal of miniaturization. In addition, the microfluidic device used in the comparative embodiment of Figures 10 and 11 is only suitable for metal docking between small-sized substrates, which is not conducive to mass production; the electroless plating tank, electroless plating system and electroless plating method principles of this application It is suitable for metal docking between large-sized substrates and is helpful for mass production.
除非另外規定，否則例如「上方」、「下方」、「上」、「左」、「右」、「下」、「頂部」、「底部」、「豎直」、「水平」、「側面」、「高於」、「低於」、「上部」、「上方」、「下面」等等之空間描述係相對於圖中所示之定向來指示的。應理解，本文中所使用之空間描述僅出於說明之目的，且本文中所描述之結構之實際實施方案可以任何定向或方式在空間上配置，其前提係本申請案之實施例之優點係不會因此類配置而有偏差。Unless otherwise specified, such as "above", "below", "top", "left", "right", "bottom", "top", "bottom", "vertical", "horizontal", "side" Spatial descriptions such as "above," "below," "upper," "above," "below," etc. are directed relative to the orientation shown in the figures. It should be understood that the spatial descriptions used herein are for illustrative purposes only and that actual implementations of the structures described herein may be configured spatially in any orientation or manner, provided that the embodiments of the present application are advantageous. There will be no bias due to such a configuration.
如本文中所使用，術語「近似地」、「基本上」、「基本」及「約」用於描述及解釋小的變化。當與事件或情況結合使用時，上述術語可指事件或情況精確地發生之例項以及事件或情況極近似地發生之例項。舉例而言，當與數值結合使用時，術語可指小於或等於上述數值之±10%之變化範圍，例如，小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%，或小於或等於±0.05%。舉例而言，若第一數值在第二數值之小於或等於±10%之變化範圍內，例如小於或等於±5%，小於或等於±4%，小於或等於±3%，小於或等於±2%，小於或等於±1%，小於或等於±0.5%，小於或等於±0.1%，或小於或等於±0.05%，則第一數值可被認為「基本上」相同於或等於第二數值。舉例而言，「基本上」垂直可指相對於90°之小於或等於±10°之角度變化範圍，例如，小於或等於±5°、小於或等於±4°、小於或等於±3°、小於或等於±2°、小於或等於±1°、小於或等於±0.5°、小於或等於±0.1°，或小於或等於±0.05°。As used herein, the terms "approximately," "substantially," "substantially," and "approximately" are used to describe and explain minor variations. When used in connection with an event or circumstance, the above terms may refer to instances in which the event or circumstance occurs exactly as well as instances in which the event or circumstance occurs closely. For example, when used in conjunction with a numerical value, the term may refer to a range of variation that is less than or equal to ±10% of the stated numerical value, for example, less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, Less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the first value is within a variation range of the second value that is less than or equal to ±10%, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ± 2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, the first value may be considered to be "substantially" the same as or equal to the second value . For example, "substantially" vertical may refer to an angular variation range of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, Less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.
若兩個表面之間的位移不大於5 µm、不大於2 µm、不大於1 µm或不大於0.5 µm，則可認為上述兩個表面係共面的或基本上共面的。若表面之最高點與最低點之間的移位不大於5 µm，不大於2 µm，不大於1 µm，或不大於0.5 µm，則可認為上述表面係基本上平坦的。Two surfaces are considered to be coplanar or substantially coplanar if the displacement between them is not greater than 5 µm, not greater than 2 µm, not greater than 1 µm or not greater than 0.5 µm. A surface is considered to be substantially flat if the displacement between the highest and lowest points of the surface is not greater than 5 µm, not greater than 2 µm, not greater than 1 µm, or not greater than 0.5 µm.
如本文中所使用，除非上下文另外明確規定，否則單數術語「一(a/an)」及「該」可包含複數指示物。As used herein, the singular terms "a/an" and "the" may include plural referents unless the context clearly dictates otherwise.
如本文中所使用，術語「導電(conductive)」、「導電(electrically conductive)」及「電導率」係指輸送電流之能力。導電材料通常指示呈現對於電流流動之極少或零對抗的彼等材料。電導率之一個量度係西門子/公尺(S/m)。通常，導電材料係電導率大於近似地104 S/m (例如，至少105 S/m或至少106 S/m)之一種材料。材料之電導率有時可隨溫度而改變。除非另外規定，否則材料之電導率係在室溫下量測的。As used herein, the terms "conductive", "electrically conductive" and "conductivity" refer to the ability to carry electrical current. Conductive materials generally refer to those materials that present little or zero resistance to the flow of electrical current. One measure of conductivity is Siemens per meter (S/m). Typically, the conductive material is one with an electrical conductivity greater than approximately 104 S/m (eg, at least 105 S/m or at least 106 S/m). The electrical conductivity of materials can sometimes change with temperature. Unless otherwise specified, the electrical conductivity of materials is measured at room temperature.
另外，有時在本文中以範圍格式呈現量、比率及其他數值。應理解，此類範圍格式係為了便利及簡潔而使用，且應靈活地理解為不僅包含明確地規定為範圍限制之數值，而且亦包含涵蓋於彼範圍內之所有個別數值或子範圍，如同明確地規定每一數值及子範圍一般。In addition, quantities, ratios, and other numerical values are sometimes presented herein in range format. It should be understood that such range formats are used for convenience and brevity, and should be flexibly understood to include not only the values expressly stated as range limits, but also all individual values or subranges encompassed within that range, as if expressly Each numerical value and subrange is generally specified.
雖然已參考本申請案之特定實施例描述並說明本申請案，但是此等描述及說明並非限制性的。熟習此項技術者應理解，在不脫離如由所附申請專利範圍定義的本申請案之真實精神及範疇的情況下，可作出各種改變並且可取代等效物。圖示可能未必按比例繪製。歸因於製造過程及公差，本申請案中之工藝再現與實際設備之間可能存在區別。可能存在未特別說明的本申請案之其他實施例。應將本說明書及圖式視為說明性而非限制性的。可進行修改，以使特定情形、材料、物質組成、方法或過程適應於本申請案之目標、精神及範疇。所有此類修改都意圖在所附申請專利範圍之範疇內。雖然本文中揭示之方法已參考按特定次序執行之特定操作加以描述，但是應理解，可在不脫離本申請案之教示的情況下組合、細分或重新排序此等操作以形成等效方法。因此，除非本文中特別指示，否則操作之次序及分組並非本申請案之限制。Although the present application has been described and illustrated with reference to specific embodiments thereof, such description and illustrations are not limiting. It should be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the true spirit and scope of the application as defined by the appended claims. Illustrations may not necessarily be drawn to scale. Due to manufacturing processes and tolerances, there may be differences between the process reproductions in this application and actual equipment. There may be other embodiments of the present application not specifically described. This specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method or process to the objectives, spirit and scope of this application. All such modifications are intended to be within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that such operations may be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of this application. Therefore, unless specifically indicated herein, the order and grouping of operations are not limitations of this application.
1:化學鍍槽 3:化學鍍系統 10:槽體 11:可旋轉承載盤 12:犧牲電極 13:轉軸 15:蓋體 16:固持部件 17:入口 18:出口 20:化鍍液 21:待鍍物 21':待鍍物 25:閥 26:壓力控制裝置 31:原料槽/無電鍍銅集液槽 32:原料槽/無電鍍鎳集液槽 33:原料槽/無電鍍金集液槽 34:原料槽/無電鍍銀集液槽 35:廢液收集槽 36:清洗液槽 37:控制裝置 38:盛液盤 39a:流量計 39b:壓力計 40:第一基板 41:第一圖案化金屬層 50:第二基板 50a:第二基板 50b:第二基板 51:第二圖案化金屬層 55:間隔物 64:化鍍金屬層 65:化鍍金屬層 66:第二化鍍金屬層 66':第二化鍍金屬層 91:入口 92:出口 100:接合結構 111:底部 112:側壁 200:接合結構 411:電連接結構 412:電連接結構 511:電連接結構 512:電連接結構 641:化鍍金屬層 642:化鍍金屬層 651:化鍍金屬層 652:化鍍金屬層 D 1:距離 H:距離 T 1:厚度 T 2:厚度 T 3:厚度 T 4:厚度 θ:傾斜角 1: Electroless plating tank 3: Electroless plating system 10: Tank body 11: Rotatable bearing plate 12: Sacrificial electrode 13: Rotating shaft 15: Cover 16: Holding component 17: Inlet 18: Outlet 20: Chemical plating solution 21: To be plated Object 21': Object to be plated 25: Valve 26: Pressure control device 31: Raw material tank/electroless copper plating liquid collecting tank 32: Raw material tank/electroless nickel plating liquid collecting tank 33: Raw material tank/electroless gold plating liquid collecting tank 34: Raw material tank/electroless silver plating liquid collection tank 35: Waste liquid collection tank 36: Cleaning liquid tank 37: Control device 38: Liquid holding tray 39a: Flow meter 39b: Pressure gauge 40: First substrate 41: First patterned metal layer 50: second substrate 50a: second substrate 50b: second substrate 51: second patterned metal layer 55: spacer 64: electroless metal layer 65: electroless metal layer 66: second electroless metal layer 66': Second chemical plating metal layer 91: entrance 92: outlet 100: joint structure 111: bottom 112: side wall 200: joint structure 411: electrical connection structure 412: electrical connection structure 511: electrical connection structure 512: electrical connection structure 641: chemical plating Metal layer 642: electroless metal layer 651: electroless metal layer 652: electroless metal layer D 1 : distance H: distance T 1 : thickness T 2 : thickness T 3 : thickness T 4 : thickness θ: tilt angle
當結合附圖閱讀時，自以下詳細描述容易理解本申請案之一些實施例之態樣。應注意，各種結構可能未按比例繪製，且各種結構之尺寸可出於論述之清楚起見任意增大或減小。 圖1說明根據本申請案之一些實施例之化學鍍槽的截面圖。 圖2說明根據本申請案之一些實施例之化學鍍槽的截面圖。 圖3說明根據本申請案之一些實施例之化學鍍系統的示意圖。 圖4、圖5、圖6及圖7說明根據本申請案之一些實施例之化學鍍方法之各個階段。 圖8說明根據本申請案之一些實施例之接合結構。 圖9說明根據本申請案之一些實施例之接合結構。 圖10及圖11說明根據本申請案之一些比較實施例之接合結構。 Aspects of some embodiments of the present application will be readily understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various structures may not be drawn to scale and the dimensions of the various structures may be arbitrarily increased or reduced for clarity of discussion. Figure 1 illustrates a cross-sectional view of an electroless plating tank in accordance with some embodiments of the present application. Figure 2 illustrates a cross-sectional view of an electroless plating tank in accordance with some embodiments of the present application. Figure 3 illustrates a schematic diagram of an electroless plating system in accordance with some embodiments of the present application. Figures 4, 5, 6, and 7 illustrate various stages of an electroless plating method according to some embodiments of the present application. Figure 8 illustrates a joint structure according to some embodiments of the present application. Figure 9 illustrates a joint structure according to some embodiments of the present application. 10 and 11 illustrate joint structures according to some comparative embodiments of the present application.
貫穿圖式及詳細描述使用共用參考標號來指示相同或類似組件。根據以下結合附圖作出之詳細描述將容易理解本申請案之實施例。Common reference numbers are used throughout the drawings and detailed description to refer to the same or similar components. The embodiments of the present application will be easily understood from the following detailed description in conjunction with the accompanying drawings.
1:化學鍍槽 10:槽體 11:可旋轉承載盤 12:犧牲電極 13:轉軸 15:蓋體 16:固持部件 17:入口 18:出口 20:化鍍液 21:待鍍物 111:底部 112:側壁 1: Chemical plating tank 10: Tank body 11: Rotatable carrier plate 12: Sacrificial electrode 13:Rotating axis 15: Cover 16: Holding parts 17:Entrance 18:Export 20: Chemical plating solution 21:Object to be plated 111: Bottom 112:Side wall
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW554069B (en) * | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
| TW201131012A (en) * | 2003-03-11 | 2011-09-16 | Ebara Corp | Plating apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW554069B (en) * | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
| TW201131012A (en) * | 2003-03-11 | 2011-09-16 | Ebara Corp | Plating apparatus |
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