TWI810132B - Wafer backside grinding method - Google Patents

Wafer backside grinding method Download PDF

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TWI810132B
TWI810132B TW112100263A TW112100263A TWI810132B TW I810132 B TWI810132 B TW I810132B TW 112100263 A TW112100263 A TW 112100263A TW 112100263 A TW112100263 A TW 112100263A TW I810132 B TWI810132 B TW I810132B
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wafer
laser
pulse beam
laser pulse
backside
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吳俊明
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鴻揚半導體股份有限公司
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Abstract

A wafer backside grinding method includes grinding a backside of a wafer; and irradiating the backside of the wafer with a laser pulse beam to sequentially generate a plurality of laser spots on the backside, in which an energy density of the laser pulse beam is in a range of 7 J/cm 2to 8 J/cm 2such that a surface temperature of the backside of the wafer within the laser spots is in a range of 1100°C to 1200°C.

Description

晶圓背面研磨方法Wafer Back Grinding Method

本揭露是有關於一種晶圓背面研磨方法，特別是有關於一種釋放晶圓內應力的晶圓背面研磨方法。The present disclosure relates to a wafer back grinding method, in particular to a wafer back grinding method for releasing internal stress of the wafer.

碳化矽（silicon carbide, SiC）晶圓與傳統矽（silicon, Si）晶圓相比，具有尺寸小、效率高、散熱快、能帶隙（band gap）寬等特性，因此在半導體產業的需求不斷增加。Compared with traditional silicon (Si) wafers, silicon carbide (SiC) wafers have the characteristics of small size, high efficiency, fast heat dissipation, and wide band gap. Therefore, the demand in the semiconductor industry Increasing.

然而，由於碳化矽晶圓硬度僅次於藍寶石（sapphire）且抗化學性（chemical resistance）強，使得碳化矽晶圓在晶圓背面研磨與晶圓背面金屬化（wafer backside metallization）的製程上都有其困難度，無法使用原先適用於矽晶圓的技術。However, since silicon carbide wafers are second only to sapphire in hardness and have strong chemical resistance, silicon carbide wafers are used in both wafer back grinding and wafer backside metallization processes. It is difficult to use technology originally adapted for silicon wafers.

因此，如何提出一種可解決上述問題的晶圓背面研磨方法，是目前業界亟欲投入研發資源解決的問題之一。Therefore, how to propose a wafer backside grinding method that can solve the above-mentioned problems is one of the problems that the industry is eager to invest in research and development resources to solve.

有鑑於此，本揭露之一目的在於提出一種可解決上述問題的晶圓背面研磨方法。In view of this, one purpose of the present disclosure is to provide a wafer back grinding method that can solve the above problems.

本揭露的一方面是有關於一種晶圓背面研磨方法包括研磨晶圓的背面；以及藉由雷射脈衝光束照射晶圓的背面，以在背面上依序產生雷射光斑，其中雷射脈衝光束的能量密度在每平方公分7.0焦耳與每平方公分8.0焦耳之間，致使晶圓的背面在雷射光斑內的表面溫度在1100˚C與1200˚C之間。One aspect of the present disclosure relates to a wafer backside grinding method comprising grinding the backside of the wafer; and irradiating the backside of the wafer with a laser pulse beam to sequentially generate laser spots on the backside, wherein the laser pulse beam The energy density is between 7.0 Joules per square centimeter and 8.0 Joules per square centimeter, resulting in a surface temperature of between 1100˚C and 1200˚C on the backside of the wafer within the laser spot.

在一些實施方式中，雷射脈衝光束由具有在308奈米與355奈米之間的雷射波長的固態光發射器產生。In some embodiments, the beam of laser pulses is generated by a solid state light emitter having a laser wavelength between 308 nm and 355 nm.

在一些實施方式中，雷射光斑中的任連續兩者具有在28%與50%之間的面積重疊率。In some embodiments, any two consecutive ones of the laser spots have an area overlap of between 28% and 50%.

在一些實施方式中，雷射光斑中的任一者的持續時間在150微秒與170微秒之間。In some embodiments, the duration of any of the laser spots is between 150 microseconds and 170 microseconds.

在一些實施方式中，雷射光斑為方形光斑。In some embodiments, the laser spot is a square spot.

本揭露的另一方面是有關於一種晶圓背面研磨方法包括研磨晶圓的背面；沉積鎳層於晶圓的背面上；以及藉由雷射脈衝光束照射鎳層，以在鎳層上依序產生雷射光斑，其中雷射脈衝光束的能量密度在每平方公分2.0焦耳與每平方公分6.3焦耳之間，致使鎳層在雷射光斑內的表面溫度在1100˚C與1200˚C之間。Another aspect of the present disclosure relates to a wafer backside grinding method comprising grinding the backside of the wafer; depositing a nickel layer on the backside of the wafer; A laser spot is generated, wherein the energy density of the laser pulse beam is between 2.0 Joules per square centimeter and 6.3 Joules per square centimeter, resulting in a surface temperature of the nickel layer within the laser spot between 1100˚C and 1200˚C.

在一些實施方式中，雷射脈衝光束由具有在308奈米與355奈米之間的雷射波長的固態光發射器產生。In some embodiments, the beam of laser pulses is generated by a solid state light emitter having a laser wavelength between 308 nm and 355 nm.

在一些實施方式中，鎳層具有在80奈米與120奈米之間的厚度。In some embodiments, the nickel layer has a thickness between 80 nm and 120 nm.

在一些實施方式中，雷射光斑中的任連續兩者具有在28%與50%之間的面積重疊率。In some embodiments, any two consecutive ones of the laser spots have an area overlap of between 28% and 50%.

在一些實施方式中，雷射光斑中的任一者的持續時間在150奈秒與170奈秒之間。In some embodiments, the duration of any of the laser spots is between 150 nanoseconds and 170 nanoseconds.

綜上所述，於本揭露的一些實施方式的晶圓背面研磨方法中，雷射脈衝光束使得碳化矽晶圓背面的局部表面升溫至1100˚C與1200˚C之間，並使得自表面至表面下深度1.5微米處的溫度都維持在1100˚C以上，因此可以釋放在研磨過程中殘留在晶圓表面附近的內應力，同時避免對晶圓正面的元件造成熱損壞。並且，晶圓背面研磨方法可進一步包括在晶圓背面沉積鎳層，藉由鎳層的熱傳導，可以使用較低能量密度的雷射脈衝光束就達到釋放內應力的效果，並在雷射脈衝光束照射以釋放內應力的過程中，同時形成歐姆接觸。另外，以雷射脈衝光束進行退火的製程時間較一般退火製程短，相較於目前常見的晶圓背面研磨方法能達到有效且快速地減少碳化矽晶圓翹曲的效果。To sum up, in the wafer back grinding method in some embodiments of the present disclosure, the laser pulse beam makes the local surface temperature on the back side of the silicon carbide wafer rise to between 1100°C and 1200°C, and makes the temperature from the surface to the The temperature at a depth of 1.5 microns below the surface is maintained above 1100˚C, thereby releasing internal stresses that remain near the wafer surface during grinding while avoiding thermal damage to components on the front side of the wafer. Moreover, the wafer back grinding method may further include depositing a nickel layer on the back of the wafer, and through the heat conduction of the nickel layer, the effect of releasing internal stress can be achieved by using a laser pulse beam with a lower energy density, and the laser pulse beam During the process of irradiating to release the internal stress, an ohmic contact is simultaneously formed. In addition, the process time of annealing with laser pulse beam is shorter than that of general annealing process, and compared with the current common wafer back grinding method, it can effectively and quickly reduce the warpage of silicon carbide wafers.

本揭露的這些與其他方面通過結合圖式對優選實施例進行以下的描述，本揭露的實施例將變得顯而易見，但在不脫離本公開的新穎概念的精神和範圍的情況下，可以進行其中的變化和修改。These and other aspects of the present disclosure will become apparent from the following description of preferred embodiments in conjunction with the drawings, but may be implemented without departing from the spirit and scope of the novel concepts of the present disclosure. changes and modifications.

以下揭露內容現在在此將透過圖式及參考資料被更完整描述，一些示例性的實施例被繪示在圖式中。本揭露可以被以不同形式實施並且不應被以下提及的實施例所限制。但是，這些實施例被提供以幫助更完整的理解本揭露之內容並且向本領域之技術人員充分傳達本發明的範圍。相同的參考標號會貫穿全文指代相似元件。The following disclosure is now more fully described herein with reference to the drawings and references in which some exemplary embodiments are shown. The present disclosure can be implemented in various forms and should not be limited by the embodiments mentioned below. However, these embodiments are provided to help a more complete understanding of the disclosure and fully convey the scope of the invention to those skilled in the art. Like reference numbers will refer to like elements throughout.

請參照第1圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法100的流程圖。如第1圖中所示，方法100包括操作101。操作101將晶圓203的背面203b研磨（如下文第3圖中所示）。方法100還包括操作102。操作102針對碳化矽（silicon carbide, SiC）晶圓203使用能量密度在每平方公分7焦耳（J/cm 2）與8 J/cm 2之間的雷射脈衝光束LB照射背面203b的局部（如下文第4圖中所示），雷射脈衝光束LB依序在背面203b上產生雷射光斑305（如下文第5圖中所示），使得背面203b在雷射光斑305內的表面溫度可以達到1100˚C以上，並且在這個溫度範圍內維持一定時間，再緩慢冷卻，達到退火的效果。 Please refer to FIG. 1 , which is a flowchart of a wafer backgrinding method 100 according to some embodiments of the present disclosure. As shown in FIG. 1 , method 100 includes operation 101 . Operation 101 grinds the backside 203b of the wafer 203 (shown in Figure 3 below). Method 100 also includes operation 102 . Operation 102 irradiates a portion of the backside 203b of the silicon carbide (silicon carbide, SiC) wafer 203 with a pulsed laser beam LB having an energy density between 7 joules (J/cm 2 ) and 8 J/cm 2 per square centimeter (as follows 4), the laser pulse beam LB sequentially produces a laser spot 305 on the back surface 203b (as shown in Figure 5 below), so that the surface temperature of the back surface 203b in the laser spot 305 can reach Above 1100˚C, and maintain in this temperature range for a certain period of time, and then cool slowly to achieve the effect of annealing.

請參照第2圖，其為根據本揭露的一些實施方式的晶圓203的剖面示意圖。如第2圖中所示，在一些實施方式中，利用晶圓支撐系統（wafer support system, WSS）來進行研磨製程。舉例來說，藉由黏著層202將晶圓203與晶圓載具201黏附在一起。具體來說，黏著層202塗佈在晶圓203的正面203a上，由於晶圓203的正面203a具有各種元件，因此將黏著層202塗佈至完整覆蓋正面203a上的所有元件特徵，以作為正面203a的保護膠層。Please refer to FIG. 2 , which is a schematic cross-sectional view of a wafer 203 according to some embodiments of the present disclosure. As shown in FIG. 2 , in some embodiments, a wafer support system (WSS) is used to perform the grinding process. For example, the wafer 203 and the wafer carrier 201 are adhered together by an adhesive layer 202 . Specifically, the adhesive layer 202 is coated on the front side 203a of the wafer 203. Since the front side 203a of the wafer 203 has various components, the adhesive layer 202 is coated to completely cover all the component features on the front side 203a as a front side. 203a protective adhesive layer.

接著，將晶圓載具201黏附於晶圓203的正面203a上，在方法100的各個操作中，用於支撐晶圓203，提供結構的穩定性，同時保護正面203a與其上的元件。在一些實施方式中，晶圓載具201可能包含藍寶石（sapphire）或玻璃。Next, the wafer carrier 201 is adhered to the front side 203 a of the wafer 203 , used to support the wafer 203 during various operations of the method 100 , provide structural stability, and protect the front side 203 a and components thereon. In some embodiments, wafer carrier 201 may comprise sapphire or glass.

在一些實施方式中，黏著層202包括高分子材料。黏著層202具有易於剝離（debond）的特性，以在相關製程結束後，在不破壞晶圓203結構的情況下剝離，舉例來說，藉由雷射剝離（laser lift-off, LLO）或機械剝離的方式。完成剝離後，再進行後續製程。In some embodiments, the adhesive layer 202 includes a polymer material. The adhesive layer 202 has the property of being easy to peel off (debond), so that it can be peeled off without damaging the structure of the wafer 203 after the relevant process is completed, for example, by laser lift-off (laser lift-off, LLO) or mechanical way of stripping. After the stripping is completed, the subsequent process is performed.

舉例來說，黏著層202所包括的高分子材料為熱溶性高分子材料，例如蠟（wax）。由於蠟為低熔點且非水溶性的材料，因此在後續剝離蠟的過程中，以熱水清洗晶圓203即可，既易於去除，亦不易汙染晶圓203。For example, the polymer material included in the adhesive layer 202 is a hot-melt polymer material, such as wax. Since the wax is a material with a low melting point and is insoluble in water, it is sufficient to wash the wafer 203 with hot water during the subsequent process of peeling off the wax, which is easy to remove and difficult to contaminate the wafer 203 .

請參照第3圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法100的中間階段的剖面示意圖。如第3圖中所示，研磨晶圓203至所需厚度。舉例來說，將Z軸方向上厚度為350微米的碳化矽晶圓203研磨至厚度為190微米或140微米，但本揭露並不以此為限。Please refer to FIG. 3 , which is a schematic cross-sectional view of an intermediate stage of a wafer backgrinding method 100 according to some embodiments of the present disclosure. As shown in FIG. 3, the wafer 203 is ground to a desired thickness. For example, the silicon carbide wafer 203 with a thickness of 350 microns in the Z-axis direction is ground to a thickness of 190 microns or 140 microns, but the disclosure is not limited thereto.

晶圓203的背面203b在經過研磨之後，失去Z軸方向上厚度提供的剛性支撐，同時研磨背面203b時產生的機械摩擦力與熱應力，可能留下微裂縫（micro-crack）或晶格差排（crystal dislocation）等缺陷，使得薄化後的晶圓203容易在剝離黏著層202後，產生明顯的翹曲（warpage）。進一步來說，如果晶圓203的背面203b的應力累積過大，可能延伸到正面203a，進而影響到正面203a上的元件，甚至造成晶圓破裂（wafer fracture），影響後續製程的良率。After the backside 203b of the wafer 203 is ground, it loses the rigid support provided by the thickness in the Z-axis direction. At the same time, the mechanical friction and thermal stress generated when the backside 203b is ground may leave micro-cracks or lattice dislocations. Defects such as crystal dislocation make the thinned wafer 203 easy to produce obvious warpage after peeling off the adhesive layer 202 . Furthermore, if the stress accumulated on the backside 203b of the wafer 203 is too large, it may extend to the frontside 203a, thereby affecting the components on the frontside 203a, and even causing wafer fracture, affecting the yield of subsequent processes.

因此，在本揭露的一些實施方式中，方法100對晶圓203的背面203b執行雷射退火製程（laser annealing process），以釋放累積在背面203b附近的應力，減少晶圓203的翹曲，進而增加強度。Therefore, in some embodiments of the present disclosure, the method 100 performs a laser annealing process (laser annealing process) on the backside 203b of the wafer 203, so as to release the stress accumulated near the backside 203b, reduce the warpage of the wafer 203, and further Increased strength.

請參照第4圖，其為繪示根據本揭露的一些實施方式的晶圓背面研磨方法100的中間階段的剖面示意圖。如第4圖中所示，在操作102中，雷射退火裝置300產生的雷射脈衝光束LB照射在晶圓203的背面203b上。Please refer to FIG. 4 , which is a schematic cross-sectional view illustrating intermediate stages of a wafer backgrinding method 100 according to some embodiments of the present disclosure. As shown in FIG. 4 , in operation 102 , the laser pulse beam LB generated by the laser annealing apparatus 300 is irradiated on the back surface 203 b of the wafer 203 .

在一些實施方式中，雷射退火裝置300包括固態光發射器301、光纖302、掃描器303以及平場掃描鏡304（flat field objectives或F-θ scan lens），但本揭露並不以此為限。In some embodiments, the laser annealing device 300 includes a solid-state light emitter 301, an optical fiber 302, a scanner 303, and a flat field scanning mirror 304 (flat field objectives or F-θ scan lens), but the present disclosure is not limited thereto .

固態光發射器301藉由光纖302與掃描器303將雷射脈衝光束LB投射至平場掃描鏡304。平場掃描鏡304將雷射脈衝光束LB聚焦，使能量更加集中。在一些實施方式中，固態光發射器301所發射的雷射波長在308奈米與355奈米之間。在一些實施方式中，使用雷射波長為308奈米的準分子脈衝雷射（excimer pulse laser），其方向性強、波長純度高且輸出功率大的特性有助於提升雷射退火的效率。The solid-state light transmitter 301 projects the laser pulse beam LB to the flat-field scanning mirror 304 through the optical fiber 302 and the scanner 303 . The flat-field scanning mirror 304 focuses the laser pulse beam LB to make the energy more concentrated. In some embodiments, the solid-state light emitter 301 emits a laser at a wavelength between 308 nm and 355 nm. In some embodiments, an excimer pulse laser (excimer pulse laser) with a laser wavelength of 308 nm is used, and its characteristics of strong directivity, high wavelength purity and high output power help to improve the efficiency of laser annealing.

在一些實施方式中，雷射退火裝置300進一步包括雷射整形單元（未示出）。透過雷射整形單元，將雷射脈衝光束LB在背面203b上產生的雷射光斑305轉換為方形光斑，如下文第5圖中所示。In some embodiments, the laser annealing device 300 further includes a laser shaping unit (not shown). Through the laser shaping unit, the laser spot 305 generated by the laser pulse beam LB on the back surface 203b is converted into a square spot, as shown in FIG. 5 below.

請參照第5圖，其為繪示根據本揭露的一些實施方式的晶圓背面研磨方法100的雷射脈衝光束LB的掃描路徑與雷射光斑305的示意圖。如第5圖中所示，雷射退火裝置300將雷射脈衝光束LB發射到晶圓203的背面203b上，掃描器303（如第4圖中所示）控制雷射脈衝光束LB以特定的掃描路徑移動。舉例來說，以第5圖中箭頭所示的弓字型路徑掃描。具體來說，雷射脈衝光束LB先沿X軸方向順向掃描，到接近背面203b的邊緣處，沿Y軸方向順向步進，再沿X軸方向逆向掃描到接近背面203b的另一邊緣處，接著沿Y軸方向順向步進，再重新沿X軸方向順向掃描，以此類推。Please refer to FIG. 5 , which is a schematic diagram illustrating the scanning path of the laser pulse beam LB and the laser spot 305 of the wafer backgrinding method 100 according to some embodiments of the present disclosure. As shown in Figure 5, the laser annealing device 300 emits the laser pulse beam LB onto the back surface 203b of the wafer 203, and the scanner 303 (as shown in Figure 4) controls the laser pulse beam LB to a specific The scan path moves. For example, scan with the bow-shaped path shown by the arrow in Figure 5. Specifically, the laser pulse beam LB first scans forward along the X-axis direction to an edge close to the back surface 203b, steps forward along the Y-axis direction, and then reversely scans along the X-axis direction to another edge close to the back surface 203b , then step forward along the Y-axis direction, and then scan along the X-axis direction again, and so on.

如第5圖中所示，雷射脈衝光束LB依序在掃描路徑上產生雷射光斑305。在一些實施方式中，雷射光斑305為方形光斑。舉例來說，雷射光斑305為邊長為350微米的方形光斑。As shown in FIG. 5 , the laser pulse beam LB sequentially generates a laser spot 305 on the scanning path. In some embodiments, the laser spot 305 is a square spot. For example, the laser spot 305 is a square spot with a side length of 350 microns.

請參照第6圖，其為繪示根據本揭露的一些實施方式的單一雷射脈衝光束LB的能量密度與多個連續雷射脈衝光束LB疊加的能量密度示意圖。在一些實施方式中，針對碳化矽晶圓203使用能量密度在7 J/cm 2與8 J/cm 2之間的雷射脈衝光束LB。舉例來說，設定固態光發射器301所產生的雷射能量密度，使得經過光纖302的光傳遞與平場掃描鏡304的聚焦後，投射到背面203b上的雷射脈衝光束LB的能量密度分布沿X軸方向呈高斯分布（Gaussian distribution）且最高能量密度在7.2 J/cm 2，如第6圖中所示。在忽略脈衝時間差影響的情況下，藉由將面積重疊率控制為43.1%，五個連續雷射脈衝光束LB的能量疊加後，可以產生如虛線所示的能量密度，使得單一雷射脈衝光束LB能量密度較低的外緣，經由疊加可以達到在7 J/cm 2與8 J/cm 2之間的能量密度。 Please refer to FIG. 6 , which is a schematic diagram illustrating the energy density of a single laser pulse beam LB and the superimposed energy density of multiple continuous laser pulse beams LB according to some embodiments of the present disclosure. In some embodiments, a pulsed laser beam LB with an energy density between 7 J/cm 2 and 8 J/cm 2 is used for the silicon carbide wafer 203 . For example, the laser energy density generated by the solid-state light emitter 301 is set so that the energy density distribution of the laser pulse beam LB projected on the back surface 203b is along the The X-axis direction has a Gaussian distribution (Gaussian distribution) and the highest energy density is 7.2 J/cm 2 , as shown in Figure 6. In the case of ignoring the influence of pulse time difference, by controlling the area overlap ratio to 43.1%, the energy density of five consecutive laser pulse beams LB can be superimposed to produce the energy density shown by the dotted line, so that a single laser pulse beam LB The outer edge with lower energy density can achieve an energy density between 7 J/cm 2 and 8 J/cm 2 through stacking.

藉由控制單一雷射脈衝光束LB持續的時間與連續兩個雷射光斑305之間的面積重疊率，使得背面203b在任一雷射光斑305內的區域可以達到1100˚C以上的表面溫度，同時從背面203b表面到表面沿Z軸方向延伸1.5微米處都能維持在1100˚C以上。如此一來，可以在不影響到正面203a上的元件的同時，有效地釋放內部殘留應力。在一些實施方式中，連續的兩個雷射光斑305之間具有在28%與50%之間的面積重疊率。By controlling the duration of a single laser pulse beam LB and the area overlap ratio between two consecutive laser spots 305, the surface temperature of the back surface 203b within any one of the laser spots 305 can reach a surface temperature of 1100°C or more, and at the same time From the surface of the back surface 203b to the surface extending 1.5 microns along the Z-axis direction, the temperature can be maintained above 1100°C. In this way, the internal residual stress can be effectively released without affecting the components on the front surface 203a. In some embodiments, two consecutive laser spots 305 have an area overlap between 28% and 50%.

進一步來説，在一個示例性實施方式中，將Z軸方向上厚度為350微米的碳化矽晶圓203研磨至190微米，在未實施雷射退火製程的情況下，除去黏著層202後所量測出的翹曲高度為0.66毫米。相對地，在實施本揭露的方法100的情況下，除去黏著層202後量測出的翹曲高度則在0毫米與0.1毫米之間。在另一個示例性實施方式中，將Z軸方向上厚度為350微米的碳化矽晶圓203研磨至140微米，在未實施雷射退火製程的情況下，除去黏著層202後所量測出的翹曲高度為0.51毫米。相對地，在實施本揭露的方法100的情況下，除去黏著層202後量測出的翹曲高度則在0毫米與0.1毫米之間。Further, in an exemplary embodiment, the silicon carbide wafer 203 with a thickness of 350 micrometers in the Z-axis direction is ground to 190 micrometers, and without laser annealing process, the amount measured after removing the adhesive layer 202 The warpage height was measured to be 0.66 mm. In contrast, in the case of implementing the method 100 of the present disclosure, the warpage height measured after removing the adhesive layer 202 is between 0 mm and 0.1 mm. In another exemplary embodiment, a silicon carbide wafer 203 with a thickness of 350 micrometers in the Z-axis direction is ground to 140 micrometers, and measured after removing the adhesive layer 202 without performing a laser annealing process. The warpage height is 0.51mm. In contrast, in the case of implementing the method 100 of the present disclosure, the warpage height measured after removing the adhesive layer 202 is between 0 mm and 0.1 mm.

值得注意的是，如果碳化矽晶圓203的溫度過高或持溫時間過長，可能導致碳化矽分解或氧化，降低晶圓203的品質。因此，在一些實施方式中，晶圓203的背面203b在任一雷射光斑305內的表面溫度控制在1100˚C與1200˚C之間。在一些實施方式中，雷射脈衝光束LB在任一雷射光斑305的範圍持續發射的時間在150微秒與170微秒之間。It should be noted that if the temperature of the silicon carbide wafer 203 is too high or the temperature is kept for too long, the silicon carbide may be decomposed or oxidized, and the quality of the wafer 203 may be reduced. Therefore, in some embodiments, the surface temperature of the backside 203b of the wafer 203 in any laser spot 305 is controlled between 1100°C and 1200°C. In some embodiments, the laser pulse beam LB is continuously emitted in the range of any laser spot 305 for between 150 microseconds and 170 microseconds.

請參照第7圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法400的流程圖。方法400與方法100之間的差異在於方法400進一步包含沉積鎳層（nickel, Ni）204在晶圓203的背面203b上，以形成歐姆接觸（ohmic contact），並且雷射脈衝光束LB直接發射在鎳層204上。Please refer to FIG. 7 , which is a flowchart of a wafer backgrinding method 400 according to some embodiments of the present disclosure. The difference between the method 400 and the method 100 is that the method 400 further includes depositing a nickel layer (nickel, Ni) 204 on the back surface 203b of the wafer 203 to form an ohmic contact, and the laser pulse beam LB is directly emitted on the on the nickel layer 204.

如第7圖中所示，方法400包括操作401。操作401將晶圓203的背面203b研磨（如上文第3圖中所示）。方法400還包括操作402。操作402在背面203b上沉積鎳層204（如下文第8圖中所示）。方法400進一步包括操作403。操作403針對碳化矽晶圓203使用能量密度在2 J/cm 2與6.3 J/cm 2之間的雷射脈衝光束LB照射鎳層204的局部（如上文第4圖中所示），雷射脈衝光束LB依序在鎳層204上產生雷射光斑305（如下文第10圖中所示）。 As shown in FIG. 7 , method 400 includes operation 401 . Operation 401 grinds the backside 203b of the wafer 203 (as shown in Figure 3 above). Method 400 also includes operation 402 . Operation 402 deposits a nickel layer 204 on the backside 203b (as shown in Figure 8 below). Method 400 further includes operation 403 . Operation 403 irradiates a portion of the nickel layer 204 (as shown in FIG . The pulsed beam LB sequentially produces a laser spot 305 on the nickel layer 204 (shown in Figure 10 below).

請參照第8圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法400的中間階段的剖面示意圖。如第8圖中所示，在晶圓203的背面203b上沉積鎳層204。在一些實施方式中，藉由濺鍍製程（sputtering）沉積鎳層204。在一些實施方式中，鎳層204在Z軸方向上具有在80奈米與120奈米之間的厚度。舉例來說，鎳層204的厚度為100奈米。Please refer to FIG. 8 , which is a cross-sectional schematic diagram of an intermediate stage of a wafer backgrinding method 400 according to some embodiments of the present disclosure. As shown in FIG. 8 , a nickel layer 204 is deposited on the backside 203 b of the wafer 203 . In some embodiments, the nickel layer 204 is deposited by sputtering. In some embodiments, the nickel layer 204 has a thickness in the Z-axis direction between 80 nm and 120 nm. For example, the nickel layer 204 has a thickness of 100 nm.

進一步來說，如果鎳層204的厚度小於80奈米，可能導致鎳層204在背面203b上的附著性不足，造成金屬剝離（metal peeling），且鎳層204在X軸方向與Y軸方向上的均匀度也可能下降。相對地，當鎳層204的厚度大於120奈米時，可能導致晶圓203從背面203b沿Z軸方向上得以升溫至1100˚C以上的深度小於1.5微米，無法有效釋放內部殘留應力。Further, if the thickness of the nickel layer 204 is less than 80 nm, the adhesion of the nickel layer 204 on the back surface 203b may be insufficient, resulting in metal peeling, and the nickel layer 204 is in the X-axis direction and the Y-axis direction. Uniformity may also decrease. In contrast, when the thickness of the nickel layer 204 is greater than 120 nm, it may cause the wafer 203 to be heated from the back surface 203b along the Z-axis to a depth of less than 1.5 microns, which cannot effectively release the internal residual stress.

在一些實施方式中，可以在沉積鎳層204之前，適當地對晶圓203的背面203b進行表面粗糙化，使得背面203b與鎳層204之間具有更好的附著性。In some embodiments, before depositing the nickel layer 204 , the back surface 203 b of the wafer 203 may be properly roughened, so as to have better adhesion between the back surface 203 b and the nickel layer 204 .

請參照第9圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法400的中間階段的剖面示意圖。第9圖所對應的操作403與第4圖所對應的操作102之間的差異在於操作403的雷射脈衝光束LB照射在鎳層204上。此外，由於鎳層204具有較高的熱傳導性，有助於持續加熱其下的晶圓203，因此可以使用較低能量密度的雷射脈衝光束LB，在較短的時間內使晶圓203的背面203b對應區域的表面溫度同樣達到1100˚C以上，同時從鎳層204表面到表面沿Z軸方向延伸1.5微米處都能維持在1100˚C以上。如此一來，可以在不影響到正面203a上的元件的同時，以較低的能耗有效地釋放內部殘留應力。Please refer to FIG. 9 , which is a cross-sectional schematic diagram of an intermediate stage of a wafer backgrinding method 400 according to some embodiments of the present disclosure. The difference between operation 403 corresponding to FIG. 9 and operation 102 corresponding to FIG. 4 is that the laser pulse beam LB in operation 403 is irradiated on the nickel layer 204 . In addition, since the nickel layer 204 has high thermal conductivity, it helps to continuously heat the wafer 203 under it, so the laser pulse beam LB with a lower energy density can be used to make the wafer 203 burn in a shorter time. The surface temperature of the area corresponding to the back surface 203b also reaches above 1100°C, and at the same time, it can be maintained above 1100°C at a point extending 1.5 microns from the surface of the nickel layer 204 to the surface along the Z-axis direction. In this way, the internal residual stress can be effectively released with low energy consumption without affecting the components on the front surface 203a.

舉例來說，當鎳層204的厚度為100奈米時，設定固態光發射器301產生的雷射能量密度，使得經過光纖302的傳送與平場掃描鏡304的聚焦後，投射到鎳層204上的雷射脈衝光束LB的最高能量密度在4.5 J/cm 2，且雷射脈衝光束LB在任一雷射光斑305的範圍持續發射160奈秒，即可使晶圓203的背面203b對應區域的表面達到1100˚C以上的溫度。 For example, when the thickness of the nickel layer 204 is 100 nanometers, the laser energy density generated by the solid-state light emitter 301 is set so that after being transmitted by the optical fiber 302 and focused by the flat-field scanning mirror 304, it is projected on the nickel layer 204 The highest energy density of the laser pulse beam LB is 4.5 J/cm 2 , and the laser pulse beam LB is continuously emitted in the range of any laser spot 305 for 160 nanoseconds, which can make the surface of the corresponding area of the back surface 203b of the wafer 203 Reach temperatures above 1100˚C.

在雷射退火的過程中，在鎳層204與晶圓203之間的接觸面產生矽化鎳（Ni xSi y）層（未示出），矽化鎳層可以有效降低鎳層204與晶圓203之間的電位障（potential barrier），形成歐姆接觸。 During the laser annealing process, a nickel silicide ( Nix Si y ) layer (not shown) is formed on the contact surface between the nickel layer 204 and the wafer 203, and the nickel silicide layer can effectively reduce the contact between the nickel layer 204 and the wafer 203. The potential barrier between them forms an ohmic contact.

值得注意的是，如果碳化矽晶圓203與鎳層204的溫度過高（例如高於1200˚C）或持溫時間過長，可能使得鎳層204與晶圓203之間的接觸面產生薄膜碳層，影響歐姆接觸的形成。因此，在一些實施方式中，鎳層204在任一雷射光斑305內的表面溫度控制在1100˚C與1200˚C之間。在一些實施方式中，雷射脈衝光束LB在任一雷射光斑305的範圍持續發射的時間在150奈秒與170奈秒之間。It is worth noting that if the temperature between the silicon carbide wafer 203 and the nickel layer 204 is too high (for example, higher than 1200°C) or the temperature is held for too long, a thin film may be formed on the contact surface between the nickel layer 204 and the wafer 203 carbon layer, which affects the formation of ohmic contacts. Therefore, in some embodiments, the surface temperature of the nickel layer 204 in any laser spot 305 is controlled between 1100°C and 1200°C. In some embodiments, the laser pulse beam LB is continuously emitted in the range of any laser spot 305 for between 150 nanoseconds and 170 nanoseconds.

請參照第10圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法400的雷射脈衝光束LB的掃描路徑與雷射光斑305的示意圖。如上所述，方法400與方法100之間的差異之一在於雷射脈衝光束LB直接發射在鎳層204上，如第10圖中所示。Please refer to FIG. 10 , which is a schematic diagram of the scanning path of the laser pulse beam LB and the laser spot 305 of the wafer backgrinding method 400 according to some embodiments of the present disclosure. As mentioned above, one of the differences between the method 400 and the method 100 is that the laser pulse beam LB is directly emitted on the nickel layer 204, as shown in FIG. 10 .

請參照第11圖，其為根據本揭露的一些實施方式的晶圓背面研磨方法400的單一雷射脈衝光束LB的能量密度與多個雷射脈衝光束LB疊加的能量密度示意圖。如第11圖中所示，在忽略脈衝時間差的情況下，藉由將面積重疊率控制為43.1%，五個連續雷射脈衝光束LB的能量疊加後，可以產生如第10圖中虛線所示的能量密度分布，使得單一雷射脈衝光束LB能量密度較低的外緣，經由疊加可以達到在4.4 J/cm 2與5.1 J/cm 2之間的能量密度。 Please refer to FIG. 11 , which is a schematic diagram of the energy density of a single laser pulse beam LB and the energy density of multiple laser pulse beams LB superimposed in the wafer backgrinding method 400 according to some embodiments of the present disclosure. As shown in Figure 11, under the condition of ignoring the pulse time difference, by controlling the area overlap rate to 43.1%, the energy of five consecutive laser pulse beams LB can be superimposed, as shown by the dotted line in Figure 10. The distribution of the energy density makes the outer edge of the single laser pulse beam LB with a lower energy density reach an energy density between 4.4 J/cm 2 and 5.1 J/cm 2 through superposition.

在一些實施方式中，雷射脈衝光束LB的能量密度在2 J/cm 2與6.3 J/cm 2之間。在一些實施方式中，連續的兩個雷射光斑305之間具有在28%與50%之間的面積重疊率。 In some embodiments, the energy density of the laser pulse beam LB is between 2 J/cm 2 and 6.3 J/cm 2 . In some embodiments, two consecutive laser spots 305 have an area overlap between 28% and 50%.

由以上對於本揭露之具體實施方式之詳述，可以明顯地看出，於本揭露的一些實施方式的晶圓背面研磨方法中，雷射脈衝光束使得碳化矽晶圓背面的局部表面升溫至1100˚C與1200˚C之間，並使得自表面至表面下深度1.5微米處的溫度都維持在1100˚C以上，因此可以釋放在研磨過程中殘留在晶圓表面附近的內應力，同時避免對晶圓正面的元件造成熱損壞。並且，晶圓背面研磨方法可進一步包括在晶圓背面沉積鎳層，藉由鎳層的熱傳導，可以使用較低能量密度的雷射脈衝光束就達到釋放內應力的效果，並在雷射脈衝光束照射以釋放內應力的過程中，同時形成歐姆接觸。另外，以雷射脈衝光束進行退火的製程時間較一般退火製程短，相較於目前常見的晶圓背面研磨方法能達到有效且快速地減少碳化矽晶圓翹曲的效果。From the above detailed description of the specific embodiments of the present disclosure, it can be clearly seen that in the wafer back grinding method of some embodiments of the present disclosure, the laser pulse beam makes the local surface temperature of the silicon carbide wafer back to 1100 ˚C and 1200˚C, and the temperature from the surface to the depth of 1.5 microns below the surface is maintained above 1100˚C, so the internal stress remaining near the wafer surface during the grinding process can be released, while avoiding damage to the Components on the front side of the wafer cause thermal damage. Moreover, the wafer back grinding method may further include depositing a nickel layer on the back of the wafer, and through the heat conduction of the nickel layer, the effect of releasing internal stress can be achieved by using a laser pulse beam with a lower energy density, and the laser pulse beam During the process of irradiating to release the internal stress, an ohmic contact is simultaneously formed. In addition, the process time of annealing with laser pulse beam is shorter than that of general annealing process, and compared with the current common wafer back grinding method, it can effectively and quickly reduce the warpage of silicon carbide wafers.

前面描述內容僅對於本揭露之示例性實施例給予說明和描述，並無意窮舉或限制本揭露所公開之發明的精確形式。以上教示可以被修改或者進行變化。The foregoing description is only intended to illustrate and describe the exemplary embodiments of the present disclosure, and is not intended to exhaust or limit the precise forms of the inventions disclosed in the present disclosure. The above teachings may be modified or varied.

被選擇並說明的實施例是用以解釋本揭露之內容以及他們的實際應用從而激發本領域之其他技術人員利用本揭露及各種實施例，並且進行各種修改以符合預期的特定用途。在不脫離本揭露之精神和範圍的前提下，替代性實施例將對於本揭露所屬領域之技術人員來說為顯而易見者。因此，本發明的範圍是根據所附發明申請專利範圍而定，而不是被前述說明書和其中所描述之示例性實施例所限定。The embodiments were chosen and described in order to explain the disclosure and their practical application to enable others skilled in the art to utilize the disclosure and the various embodiments with various modifications as are suited to the particular use contemplated. Alternative embodiments will be apparent to those skilled in the art to which the disclosure pertains without departing from the spirit and scope of the disclosure. Accordingly, the scope of the present invention is determined by the appended claims and is not limited by the foregoing description and the exemplary embodiments described therein.

100,400:方法100,400: method

101,102,401,402,403:操作101, 102, 401, 402, 403: Operation

201:晶圓載具201: wafer carrier

202:黏著層202: Adhesive layer

203:晶圓203: Wafer

203a:正面203a: front

203b:背面203b: back

204:鎳層204: nickel layer

300:雷射退火裝置300:Laser annealing device

301:固態光發射器301: Solid state light transmitter

302:光纖302: optical fiber

303:掃描器303: Scanner

304:平場掃描鏡304: Flat field scanning mirror

305:雷射光斑305: laser spot

LB:雷射脈衝光束LB: laser pulse beam

X,Y,Z:軸X, Y, Z: axes

圖式繪示了本揭露的一個或多個實施例，並且與書面描述一起用於解釋本揭露之原理。在所有圖式中，儘可能使用相同的圖式標記指代實施例的相似或相同元件，其中： 第1圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的流程圖。 第2圖為繪示根據本揭露的一些實施方式的晶圓的剖面示意圖。 第3圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的中間階段的剖面示意圖。 第4圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的中間階段的剖面示意圖。 第5圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的雷射脈衝光束的掃描路徑與雷射光斑示意圖。 第6圖為繪示根據本揭露的一些實施方式的單一雷射脈衝光束的能量密度與多個雷射脈衝光束疊加的能量密度示意圖。 第7圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的流程圖。 第8圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的中間階段的剖面示意圖。 第9圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的中間階段的剖面示意圖。 第10圖為繪示根據本揭露的一些實施方式的晶圓背面研磨方法的雷射脈衝光束的掃描路徑與雷射光斑示意圖。 第11圖為繪示根據本揭露的一些實施方式的單一雷射脈衝光束的能量密度與多個雷射脈衝光束疊加的能量密度示意圖。 The drawings illustrate one or more embodiments of the disclosure and, together with the written description, serve to explain principles of the disclosure. Wherever possible, the same drawing references are used throughout the drawings to refer to similar or identical elements of the embodiments, wherein: FIG. 1 is a flowchart illustrating a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 2 is a schematic cross-sectional view illustrating a wafer according to some embodiments of the present disclosure. FIG. 3 is a schematic cross-sectional view illustrating an intermediate stage of a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 4 is a schematic cross-sectional view illustrating an intermediate stage of a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 5 is a schematic diagram illustrating a scanning path of a laser pulse beam and a laser spot in a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 6 is a schematic diagram illustrating the energy density of a single laser pulse beam and the superimposed energy density of multiple laser pulse beams according to some embodiments of the present disclosure. FIG. 7 is a flowchart illustrating a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 8 is a schematic cross-sectional view illustrating an intermediate stage of a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 9 is a schematic cross-sectional view illustrating an intermediate stage of a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 10 is a schematic diagram illustrating a scanning path of a laser pulse beam and a laser spot in a wafer backgrinding method according to some embodiments of the present disclosure. FIG. 11 is a schematic diagram showing the energy density of a single laser pulse beam and the superimposed energy density of multiple laser pulse beams according to some embodiments of the present disclosure.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100:方法 100: method

101,102:操作 101,102: Operation

Claims (10)

一種晶圓背面研磨方法，包含：研磨一晶圓的一背面；以及藉由一雷射脈衝光束照射該晶圓的該背面，以依序在該背面的全部部位上產生複數個雷射光斑，其中該雷射脈衝光束的一能量密度在每平方公分7焦耳與每平方公分8焦耳之間，致使該背面在該些雷射光斑內的一表面溫度在1100℃與1200℃之間，且該晶圓在該雷射脈衝光束照射期間為實質上固態的。 A wafer backside grinding method, comprising: grinding a backside of a wafer; and irradiating the backside of the wafer with a laser pulse beam to sequentially generate a plurality of laser spots on all parts of the backside, wherein an energy density of the laser pulse beam is between 7 joules per square centimeter and 8 joules per square centimeter, resulting in a surface temperature of the back surface within the laser spots between 1100°C and 1200°C, and the The wafer is substantially solid during irradiation of the laser pulse beam. 如請求項1所述之晶圓背面研磨方法，其中該雷射脈衝光束由具有在308奈米與355奈米之間的一雷射波長的一固態光發射器產生。 The method of claim 1, wherein the laser pulse beam is generated by a solid state light emitter having a laser wavelength between 308 nm and 355 nm. 如請求項1所述之晶圓背面研磨方法，其中該些雷射光斑中的任連續兩者具有在28%與50%之間的一面積重疊率。 The wafer back grinding method as claimed in claim 1, wherein any consecutive two of the laser spots have an area overlapping ratio between 28% and 50%. 如請求項1所述之晶圓背面研磨方法，其中該些雷射光斑中的任一者的一持續時間在150微秒與170微秒之間。 The wafer back grinding method as claimed in claim 1, wherein a duration of any one of the laser spots is between 150 microseconds and 170 microseconds. 如請求項1所述之晶圓背面研磨方法，其中該些雷射光斑為方形光斑。 The wafer back grinding method according to claim 1, wherein the laser spots are square spots. 一種晶圓背面研磨方法，包含：研磨一晶圓的一背面；沉積一鎳層於該晶圓的該背面上；以及藉由一雷射脈衝光束照射該鎳層，以依序在該鎳層的全部部位上產生複數個雷射光斑，其中該雷射脈衝光束的一能量密度在每平方公分2焦耳與每平方公分6.3焦耳之間，致使該鎳層在該些雷射光斑內的一表面溫度在1100℃與1200℃之間，且該晶圓在該雷射脈衝光束照射期間為實質上固態的。 A wafer backside grinding method, comprising: grinding a backside of a wafer; depositing a nickel layer on the backside of the wafer; and irradiating the nickel layer with a laser pulse beam to sequentially coat the nickel layer A plurality of laser spots are generated on all parts of the laser pulse beam, wherein an energy density of the laser pulse beam is between 2 joules per square centimeter and 6.3 joules per square centimeter, resulting in a surface of the nickel layer within the laser spots The temperature is between 1100°C and 1200°C, and the wafer is substantially solid during irradiation of the laser pulse beam. 如請求項6所述之晶圓背面研磨方法，其中該雷射脈衝光束由具有在308奈米與355奈米之間的一雷射波長的一固態光發射器產生。 The wafer backgrinding method of claim 6, wherein the laser pulse beam is generated by a solid state light emitter having a laser wavelength between 308 nm and 355 nm. 如請求項6所述之晶圓背面研磨方法，其中鎳層具有在80奈米與120奈米之間的厚度。 The wafer back grinding method as claimed in claim 6, wherein the nickel layer has a thickness between 80 nm and 120 nm. 如請求項6所述之晶圓背面研磨方法，其中該些雷射光斑中的任連續兩者具有在28%與50%之間的一面積重疊率。 The wafer back grinding method as claimed in claim 6, wherein any consecutive two of the laser spots have an area overlapping ratio between 28% and 50%. 如請求項6所述之晶圓背面研磨方法，其中該些雷射光斑中的任一者的一持續時間在150奈秒與 170奈秒之間。Wafer back grinding method as described in claim 6, wherein a duration of any one of the laser spots is between 150 nanoseconds and between 170 nanoseconds.
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