TWI808576B - Electrostatic chuck and semiconductor processing equipment - Google Patents
Electrostatic chuck and semiconductor processing equipment Download PDFInfo
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- TWI808576B TWI808576B TW110147940A TW110147940A TWI808576B TW I808576 B TWI808576 B TW I808576B TW 110147940 A TW110147940 A TW 110147940A TW 110147940 A TW110147940 A TW 110147940A TW I808576 B TWI808576 B TW I808576B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Microelectronics & Electronic Packaging (AREA)
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- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
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Abstract
本發明提供一種靜電卡盤以半導體加工設備，靜電卡盤包括絕緣層和溫度調節結構；其中，絕緣層中設置有直流電極，用於靜電吸附置於絕緣層上的晶圓；溫度調節結構包括設置在絕緣層底部的絕緣基體，絕緣基體中設置有對地懸浮的熱交換部件，熱交換部件包括自絕緣基體的上表面暴露出來的接觸面，接觸面與絕緣層的下表面相接觸，用以藉由熱傳導控制晶圓的溫度。本發明提出的靜電卡盤及半導體加工設備，其能夠減小直流電極的對地電容，以減小在對地電容上的功率損耗，提高製程效率。The invention provides an electrostatic chuck and semiconductor processing equipment. The electrostatic chuck includes an insulating layer and a temperature adjustment structure; wherein, the insulating layer is provided with a DC electrode for electrostatic adsorption of a wafer placed on the insulating layer; the temperature adjustment structure includes an insulating base arranged at the bottom of the insulating layer, and a heat exchange component suspended to the ground is arranged in the insulating base. The heat exchange component includes a contact surface exposed from the upper surface of the insulating base. The electrostatic chuck and semiconductor processing equipment proposed by the present invention can reduce the ground capacitance of the DC electrode, so as to reduce the power loss on the ground capacitance and improve the process efficiency.
Description
本發明涉及半導體製造領域，具體地，涉及一種靜電卡盤及半導體加工設備。The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck and semiconductor processing equipment.
目前，電漿浸沒離子注入技術廣泛地應用於積體電路或微機電系統器件的製造製程中。具體的，電漿浸沒離子注入技術是藉由應用高電壓脈衝直流電源或直流電源，將電漿中的加速離子作為摻雜物注入合適的基體或設置有電極的半導體晶片的靶的一種表面改性技術。由於電漿中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子，這些活性粒子在下偏壓的作用下到達晶圓表面，和晶圓相互作用使材料表面發生各種物理和化學反應, 從而使材料表面性能獲得變化。At present, plasma immersion ion implantation technology is widely used in the manufacturing process of integrated circuits or MEMS devices. Specifically, the plasma immersion ion implantation technology is a surface modification technology that injects accelerated ions in the plasma as dopants into a suitable substrate or a semiconductor wafer target with electrodes by applying a high-voltage pulsed DC power supply or DC power supply. Since the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, these active particles reach the surface of the wafer under the action of a lower bias voltage, and interact with the wafer to cause various physical and chemical reactions on the surface of the material, thereby changing the surface properties of the material.
在進行電漿浸沒離子注入製程時，晶圓一般由靜電卡盤承載和固定。對於現有的靜電卡盤結構，其通常包括由上而下依次設置的直流電極層、加熱器和鋁基體，但是，由於鋁基體藉由腔室壁接地，同時直流電極與鋁基體的距離較近，導致現有的靜電卡盤的對地電容較大，從而無法滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。During the plasma immersion ion implantation process, the wafer is generally carried and fixed by an electrostatic chuck. For the existing electrostatic chuck structure, it usually includes a DC electrode layer, a heater, and an aluminum substrate arranged in sequence from top to bottom. However, since the aluminum substrate is grounded by the chamber wall, and the distance between the DC electrode and the aluminum substrate is relatively short, the existing electrostatic chuck has a large ground capacitance, which cannot meet the requirements of the plasma immersion ion implantation technology for the electrostatic chuck's ground capacitance.
本發明實施例旨在至少解決先前技術中存在的技術問題之一，提出了一種靜電卡盤及半導體加工設備，其能夠減小對地電容，從而可以滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。The embodiment of the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an electrostatic chuck and semiconductor processing equipment, which can reduce the capacitance to ground, thereby meeting the requirements of plasma immersion ion implantation technology on the capacitance to ground of the electrostatic chuck.
為實現本發明的目的而提供一種靜電卡盤，其特徵在於，包括絕緣層和溫度調節結構；其中，該絕緣層中設置有直流電極，用於靜電吸附置於該絕緣層上的晶圓； 該溫度調節結構包括設置在該絕緣層底部的絕緣基體，該絕緣基體中設置有對地懸浮的熱交換部件，該熱交換部件包括自該絕緣基體的上表面暴露出來的接觸面，該接觸面與該絕緣層的下表面相接觸，用以藉由熱傳導控制該晶圓的溫度。 To achieve the purpose of the present invention, an electrostatic chuck is provided, which is characterized in that it includes an insulating layer and a temperature adjustment structure; wherein, the insulating layer is provided with a DC electrode for electrostatically adsorbing a wafer placed on the insulating layer; The temperature regulating structure includes an insulating base disposed at the bottom of the insulating layer, the insulating base is provided with a heat exchanging component suspended to the ground, the heat exchanging component includes a contact surface exposed from the upper surface of the insulating base, and the contact surface is in contact with the lower surface of the insulating layer for controlling the temperature of the wafer by heat conduction.
可選的，該絕緣基體上設置有凹槽，且該凹槽的開口位於該絕緣基體的上表面；該熱交換部件設置在該凹槽中，該熱交換部件的上表面用作該接觸面與該絕緣層的下表面接觸； 並且，該熱交換部件與該凹槽彼此相對的側面之間具有預設間隙，該預設間隙的寬度大於等於該絕緣基體受熱膨脹的變化量。 Optionally, a groove is provided on the insulating base, and the opening of the groove is located on the upper surface of the insulating base; the heat exchange component is disposed in the groove, and the upper surface of the heat exchange component is used as the contact surface to contact the lower surface of the insulating layer; In addition, there is a preset gap between the heat exchange component and the opposite sides of the groove, and the width of the preset gap is greater than or equal to the variation of thermal expansion of the insulating base.
可選的，在該預設間隙中，以及在該熱交換部件與該凹槽彼此相對的底面之間填充有可壓縮的黏接材料；並且，在該熱交換部件的上表面覆蓋有該可壓縮的黏接材料。Optionally, a compressible adhesive material is filled in the preset gap and between the heat exchange component and the opposite bottom surface of the groove; and the compressible adhesive material is covered on the upper surface of the heat exchange component.
可選的，該黏接材料包括矽脂或聚四氟乙烯。Optionally, the adhesive material includes silicone grease or polytetrafluoroethylene.
可選的，該熱交換部件包括熱交換本體和設置在該熱交換本體中的熱交換通道，其中， 該熱交換通道用於藉由輸送熱交換介質來與該熱交換本體進行熱交換。 Optionally, the heat exchange component includes a heat exchange body and a heat exchange channel provided in the heat exchange body, wherein, The heat exchange channel is used for exchanging heat with the heat exchange body by transporting a heat exchange medium.
可選的，該靜電卡盤還包括輸入管道、輸出管道和溫控裝置，其中， 該輸入管道的兩端分別與該熱交換通道的輸入端和該溫控裝置的輸出端連接； 該輸出管道的兩端分別與該熱交換通道的輸出端和該溫控裝置的輸入端連接； 該溫控裝置用於調節該熱交換介質的溫度。 Optionally, the electrostatic chuck also includes an input pipeline, an output pipeline and a temperature control device, wherein, The two ends of the input pipe are respectively connected with the input end of the heat exchange channel and the output end of the temperature control device; Both ends of the output pipe are respectively connected to the output end of the heat exchange channel and the input end of the temperature control device; The temperature control device is used to adjust the temperature of the heat exchange medium.
可選的，該輸入管道和該輸出管道均為絕緣軟管。Optionally, both the input pipeline and the output pipeline are insulating hoses.
可選的，在該熱交換本體上設置有自該熱交換本體的下表面由下而上分別貫通至該熱交換通道的輸入端和輸出端的兩個第一通孔；在該絕緣基體上設置有自該絕緣基體的下表面由下而上貫通至該絕緣基體的與該熱交換本體的下表面相對的表面的兩個第二通孔；其中，兩個該第一通孔的一端分別與該熱交換通道的輸入端和輸出端連接，兩個該第一通孔的另一端分別與兩個該第二通孔的一端連接，兩個該第二通孔的另一端分別與該輸入管道和該輸出管道的一端連接。Optionally, the heat exchange body is provided with two first through holes that penetrate from the lower surface of the heat exchange body to the input end and the output end of the heat exchange channel from bottom to top; the insulating base is provided with two second through holes that pass from the lower surface of the insulating base to the surface of the insulating base opposite to the lower surface of the heat exchange body; One ends of the two second through holes are connected, and the other ends of the two second through holes are respectively connected with one end of the input pipeline and the output pipeline.
可選的，該熱交換通道相對於該接觸面均勻分佈。Optionally, the heat exchange channels are evenly distributed relative to the contact surface.
可選的，該熱交換通道包括複數個環形子通道，複數個該環形子通道等間距分佈在以該接觸面的中心為圓心，且半徑不同的複數個圓周上；其中，半徑最小的環形子通道為圓弧形通道段，其餘的環形子通道均由相對於該接觸面的徑向對稱分佈，且相互間隔的兩個半環形通道段組成；半徑最大的兩個該半環形通道段彼此相對的一端分別用作該熱交換通道的輸入端和輸出端； 沿由該熱交換通道的該輸入端至該輸出端的方向，所有的該半環形通道段和該圓弧形通道段藉由複數個子連接通道首尾串接連通，以形成一條連續通道。 Optionally, the heat exchange channel includes a plurality of annular sub-channels, and the plurality of annular sub-channels are equidistantly distributed on a plurality of circles with the center of the contact surface as the center and different radii; wherein, the annular sub-channel with the smallest radius is an arc-shaped channel segment, and the remaining annular sub-channels are composed of two semi-annular channel segments that are radially symmetrically distributed relative to the contact surface and are spaced from each other; the opposite ends of the two semi-annular channel segments with the largest radius are respectively used as the input end and the output end of the heat exchange channel; Along the direction from the input end to the output end of the heat exchange channel, all the semi-circular channel sections and the arc-shaped channel sections are connected in series end-to-end through a plurality of sub-connecting channels to form a continuous channel.
作用為另一種方案，本發明實施例還提供一種半導體加工設備，包括反應腔室和設置在該反應腔室中的靜電卡盤，其特徵在於，該靜電卡盤採用上述的靜電卡盤。As another solution, an embodiment of the present invention also provides a semiconductor processing device, including a reaction chamber and an electrostatic chuck disposed in the reaction chamber, wherein the electrostatic chuck is the above-mentioned electrostatic chuck.
可選的，該半導體加工設備為電漿浸沒離子注入設備。Optionally, the semiconductor processing equipment is plasma immersion ion implantation equipment.
本發明實施例具有以下有益效果： 本發明實施例提供的靜電卡盤，其溫度調節結構藉由採用絕緣基體，同時使設置在該絕緣基體中的熱交換部件對地懸浮，可以使溫度調節結構整體對地絕緣，這與先前技術相比，可以增大設置在溫度調節結構上方的直流電極與大地之間的距離，從而可以減小靜電卡盤的對地電容，進而可以減少在對地電容上損耗的功率，使更多的功率用於加工過程，以獲得較高的加工效率，從而可以滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。 Embodiments of the present invention have the following beneficial effects: In the electrostatic chuck provided by the embodiment of the present invention, the temperature adjustment structure of the electrostatic chuck adopts an insulating matrix and at the same time suspends the heat exchange components disposed in the insulating matrix to the ground, so that the temperature adjustment structure can be insulated from the ground as a whole. Compared with the prior art, the distance between the DC electrode disposed above the temperature adjustment structure and the ground can be increased, thereby reducing the ground capacitance of the electrostatic chuck, thereby reducing the power lost on the ground capacitance, and allowing more power to be used in the processing process to obtain higher processing efficiency. Disk capacitance requirements to ground.
本發明實施例提供的半導體加工設備，採用了本發明實施例提供的上述靜電卡盤固定晶圓，由於該靜電卡盤的對地電容較小，可以減少在對地電容上的損耗的功率，使更多的功率用於加工過程，因此本發明實施例提供的半導體加工設備可以獲得較高的加工效率，從而可以滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。The semiconductor processing equipment provided by the embodiment of the present invention adopts the above-mentioned electrostatic chuck provided by the embodiment of the present invention to fix the wafer. Since the ground capacitance of the electrostatic chuck is small, the power lost on the ground capacitance can be reduced, and more power can be used in the processing process. Therefore, the semiconductor processing equipment provided by the embodiment of the present invention can obtain higher processing efficiency, thereby meeting the requirements of the plasma immersion ion implantation technology on the ground capacitance of the electrostatic chuck.
下面詳細描述本發明，本發明的實施例的示例在附圖中示出，其中自始至終相同或類似的標號表示相同或類似的部件或具有相同或類似功能的部件。此外，如果已知技術的詳細描述對於示出的本發明的特徵是不必要的，則將其省略。下面藉由參考附圖描述的實施例是示例性的，僅用於解釋本發明，而不能解釋為對本發明的限制。The present invention is described in detail below, and examples of embodiments of the present invention are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Furthermore, detailed descriptions of known techniques are omitted if they are not necessary to illustrate the features of the invention. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and cannot be construed as limiting the present invention.
本技術領域技術人員可以理解，除非另外定義，本實施例中使用的所有術語（包括技術術語和科學術語），具有與本發明所屬領域中的普通技術人員的一般理解相同的意義。還應該理解的是，諸如通用字典中定義的那些術語，應該被理解為具有與先前技術的上下文中的意義一致的意義，並且除非像這裏一樣被特定定義，否則不會用理想化或過於正式的含義來解釋。Those skilled in the art can understand that unless otherwise defined, all terms (including technical terms and scientific terms) used in this embodiment have the same meanings as those of ordinary skill in the art to which the present invention belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have a meaning consistent with the meaning in the context of the prior art, and unless specifically defined as herein, are not to be interpreted in an idealized or overly formal sense.
為使本領域的技術人員更好地理解本發明的技術方案，下面結合附圖來對本發明實施例提供的靜電卡盤及半導體加工設備進行詳細描述。 實施例1 In order for those skilled in the art to better understand the technical solutions of the present invention, the electrostatic chuck and semiconductor processing equipment provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Example 1
請參考圖1，本實施例提供一種靜電卡盤，用於固定晶圓，其包括絕緣層1和溫度調節結構2。其中，絕緣層1中設置有直流電極11，其能夠利用靜電吸附原理吸附置於絕緣層1上的晶圓，從而實現對晶圓的固定。當上述靜電卡盤應用於電漿浸沒離子注入製程中時，直流電極11還會被通入直流脈衝，用於向晶圓提供吸引離子的能量。在一些可選的實施例中，絕緣層1可以採用陶瓷等絕緣材料製成。Please refer to FIG. 1 , this embodiment provides an electrostatic chuck for fixing a wafer, which includes an insulating layer 1 and a temperature regulating structure 2 . Wherein, the insulating layer 1 is provided with a DC electrode 11, which can absorb the wafer placed on the insulating layer 1 by using the principle of electrostatic adsorption, so as to realize the fixing of the wafer. When the above-mentioned electrostatic chuck is applied in the plasma immersion ion implantation process, the DC electrode 11 will also be fed with a DC pulse to provide energy for attracting ions to the wafer. In some optional embodiments, the insulating layer 1 may be made of insulating materials such as ceramics.
溫度調節結構2包括設置在絕緣層1底部的絕緣基體21，由於絕緣基體21採用絕緣材料製作，其與大地電絕緣。在一些應用場景中，可能在製程腔室中存在與大地電導通的地線（例如腔室底壁），在這種情況下，絕緣基體21還能夠藉由與地線絕緣，從而與大地絕緣。絕緣基體21中設置有對地懸浮的熱交換部件22，即熱交換部件22與大地也是絕緣的。The temperature adjustment structure 2 includes an insulating base 21 arranged at the bottom of the insulating layer 1, and since the insulating base 21 is made of insulating material, it is electrically insulated from the ground. In some application scenarios, there may be a ground wire electrically connected to the ground in the process chamber (eg, the bottom wall of the chamber). In this case, the insulating base 21 can also be insulated from the ground by being insulated from the ground wire. The insulating matrix 21 is provided with a heat exchange component 22 suspended to the ground, that is, the heat exchange component 22 is also insulated from the ground.
根據電容的基本結構可知，電容由兩個導電極板和位於二者之間的絕緣體構成，在直流電極11被通電後，直流電極11可作為一個導電極板，大地則作為另一個導電極板，這兩個導電極板中間存在著作為絕緣體的空氣，這就構成了電容，而這一電容就是直流電極11的對地電容（相當於靜電卡盤的對地電容）。在實際應用中，靜電卡盤常常應用於製程腔室中，在這種情況下，在直流電極11被通電後，其會和導電的腔室底壁構成電容，而腔室底壁通常作為地線與大地電導通，在此條件下，直流電極11與腔室底壁構成的電容，也可以視作直流電極11的對地電容。According to the basic structure of the capacitor, the capacitor is composed of two conductive plates and an insulator between them. After the DC electrode 11 is energized, the DC electrode 11 can be used as a conductive plate, and the earth can be used as another conductive plate. There is air as an insulator between the two conductive plates, which constitutes a capacitor, and this capacitance is the ground capacitance of the DC electrode 11 (equivalent to the ground capacitance of the electrostatic chuck). In practical applications, electrostatic chucks are often used in process chambers. In this case, after the DC electrode 11 is energized, it will form a capacitance with the conductive chamber bottom wall, and the chamber bottom wall is usually used as a ground wire to conduct electricity with the ground. Under this condition, the capacitance formed by the DC electrode 11 and the chamber bottom wall can also be regarded as the ground capacitance of the DC electrode 11.
為了減小直流電極11的對地電容，藉由使絕緣基體21與大地電絕緣，並使熱交換部件22對地懸浮，可以增大直流電極11到大地或地線之間的距離，具體來說，先前技術中由於靜電卡盤的鋁基體藉由腔室壁接地，這使得直流電極到大地或地線之間的距離即為直流電極與鋁基體之間的距離，與之相比，本發明實施例提供的靜電卡盤，其直流電極11到大地或地線之間的距離為直流電極11與腔室底壁之間的距離，因此，本發明實施例提供的靜電卡盤相比於先前技術，有效增大了直流電極11到大地或地線之間的距離。In order to reduce the ground capacitance of the DC electrode 11, the distance between the DC electrode 11 and the ground or the ground wire can be increased by electrically insulating the insulating base 21 from the ground and suspending the heat exchange component 22 to the ground. Specifically, in the prior art, the aluminum base of the electrostatic chuck is grounded by the chamber wall, which makes the distance between the DC electrode and the ground or the ground wire equal to the distance between the DC electrode and the aluminum base. The distance between the lines is the distance between the DC electrode 11 and the bottom wall of the chamber. Therefore, compared with the prior art, the electrostatic chuck provided by the embodiment of the present invention effectively increases the distance between the DC electrode 11 and the ground or the ground wire.
根據對地電容公式C=εs/d（其中，C為直流電極的對地電容，ε為直流電極與大地之間的物質的介電常數，s為電極面積，d為直流電極到大地或地線之間的距離）可知，直流電極11與大地或地線之間的距離越大，其對地電容就越小，基於此，藉由增大直流電極11到大地或地線之間的距離，可以減小直流電極11的對地電容，相當於靜電卡盤的對地電容，從而可以減少在對地電容上損耗的功率，使更多的功率用於加工過程，進而可以滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。According to the ground capacitance formula C=εs/d (wherein, C is the ground capacitance of the DC electrode, ε is the dielectric constant of the material between the DC electrode and the earth, s is the electrode area, and d is the distance between the DC electrode and the earth or the ground wire), it can be known that the greater the distance between the DC electrode 11 and the earth or the ground wire, the smaller the ground capacitance. Therefore, the power lost on the ground capacitance can be reduced, and more power can be used in the processing process, thereby meeting the requirements of the plasma immersion ion implantation technology on the ground capacitance of the electrostatic chuck.
以本實施例提供的靜電卡盤應用於電漿浸沒離子注入製程為例，圖2為此條件下的靜電卡盤的工作等效電路圖，如圖2所示，在進行電漿浸沒離子注入製程時，電漿可等效為一個電漿等效電感L和一個電漿等效電容R2；靜電卡盤可等效為一個靜電卡盤等效電容C2、一個靜電卡盤對地電容C1和一個靜電卡盤對地等效電阻R1。其中，上述電漿等效電感L、電漿等效電容R2和靜電卡盤等效電容C2可以等效為電漿支路，其用於對晶圓進行電漿浸沒離子注入製程；上述靜電卡盤對地電容C1和靜電卡盤對地等效電阻R1可以等效為對地支路。直流電極11同時與電漿支路和對地支路電連接，如圖2所示，直流電極11在上述等效電路中的位置可以相當於電漿支路和對地支路的交點A。由於直流脈衝源輸出的直流脈衝功率也從此交點A接入，直流脈衝功率會被分配至電漿支路和對地支路中。為了提高製程效率，分配至電漿支路中的直流脈衝功率應該遠高於分配至對地支路中的直流脈衝功率，即，分配至對地支路中的直流脈衝功率越小，用於加工過程的功率越大，從而可以獲得較高的加工效率。Taking the application of the electrostatic chuck provided in this embodiment in the plasma immersion ion implantation process as an example, FIG. 2 is a working equivalent circuit diagram of the electrostatic chuck under this condition. As shown in FIG. 2 , during the plasma immersion ion implantation process, the plasma can be equivalent to a plasma equivalent inductance L and a plasma equivalent capacitance R2; the electrostatic chuck can be equivalent to an electrostatic chuck equivalent capacitance C2, an electrostatic chuck ground capacitance C1, and an electrostatic chuck ground equivalent resistance R1. Wherein, the above-mentioned plasma equivalent inductance L, plasma equivalent capacitance R2 and electrostatic chuck equivalent capacitance C2 can be equivalent to a plasma branch, which is used to perform plasma immersion ion implantation process on the wafer; the above-mentioned electrostatic chuck-to-ground capacitance C1 and electrostatic chuck-to-ground equivalent resistance R1 can be equivalent to a ground-to-ground branch. The DC electrode 11 is electrically connected to the plasma branch and the ground branch at the same time. As shown in FIG. 2 , the position of the DC electrode 11 in the above equivalent circuit can be equivalent to the intersection point A of the plasma branch and the ground branch. Since the DC pulse power output by the DC pulse source is also connected to this intersection point A, the DC pulse power will be distributed to the plasma branch and the ground branch. In order to improve the process efficiency, the DC pulse power allocated to the plasma branch should be much higher than the DC pulse power allocated to the ground branch, that is, the smaller the DC pulse power allocated to the ground branch, the greater the power used for the processing process, so that higher processing efficiency can be obtained.
根據容抗計算公式：1/ωC1（其中，ω為直流脈衝功率的頻率）可知，上述靜電卡盤對地電容C1越小，對應的對地支路上的容抗就越大，對地支路中的電流就越小，損耗在對地支路上的直流脈衝功率就會更小，以使更多的直流脈衝功率加載到電漿支路中，從而使更多的直流脈衝功率用於晶圓的製程過程，提高製程效率。According to the capacitive reactance calculation formula: 1/ωC1 (where ω is the frequency of the DC pulse power), it can be known that the smaller the ground capacitance C1 of the above-mentioned electrostatic chuck, the greater the capacitance reactance on the corresponding ground branch, the smaller the current in the ground branch, and the smaller the DC pulse power lost on the ground branch, so that more DC pulse power is loaded into the plasma branch, so that more DC pulse power is used in the wafer process process and the process efficiency is improved.
在一些可選的實施例中，絕緣基體21可以採用陶瓷等絕緣材料製成。In some optional embodiments, the insulating base 21 may be made of insulating materials such as ceramics.
以上僅以電漿浸沒離子注入製程為例，對對地電容和製程效率關係進行分析，但是本發明實施例並不局限於此，在實際應用中，上述靜電卡盤還可以應用在其他製程中，例如物理氣相沉積製程或者刻蝕製程。The above only takes the plasma immersion ion implantation process as an example to analyze the relationship between ground capacitance and process efficiency, but the embodiment of the present invention is not limited thereto. In practical applications, the above electrostatic chuck can also be applied in other processes, such as physical vapor deposition process or etching process.
需要說明的是，上述熱交換部件22可以藉由絕緣基體21來實現對地懸浮，即，利用絕緣基體21使熱交換部件22與外部的地線（例如腔室壁）電絕緣，從而實現對地懸浮。具體地，如圖1所示，對地懸浮的熱交換部件22包括自絕緣基體21的上表面暴露出來的接觸面221，接觸面221與絕緣層1的下表面相接觸，用以藉由熱傳導控制晶圓的溫度，即，熱交換部件22可以藉由與之接觸的絕緣層1與晶圓進行熱交換，以實現對晶圓的溫度控制。由於絕緣基體21所採用的絕緣材料的導熱性能相對於金屬等材料較差，而且若直接向絕緣基體21通入去離子水很容易造成絕緣基體21炸裂，為此，藉由使熱交換部件22的接觸面自絕緣基體21的上表面暴露出來，可以使熱交換部件22能夠與絕緣層1直接接觸，從而可以保證良好的導熱性能，提高熱傳導效率。同時，藉由使熱交換部件22的除接觸面之外的部分位於絕緣基體21中，可以保證熱交換部件22對地懸浮。It should be noted that the above-mentioned heat exchange component 22 can be suspended to the ground by the insulating matrix 21, that is, the heat exchange component 22 is electrically insulated from the external ground wire (such as the chamber wall) by using the insulating matrix 21, so as to realize the suspension to the ground. Specifically, as shown in FIG. 1 , the ground-suspended heat exchange component 22 includes a contact surface 221 exposed from the upper surface of the insulating base 21, and the contact surface 221 is in contact with the lower surface of the insulating layer 1 for controlling the temperature of the wafer through heat conduction. Since the thermal conductivity of the insulating material used in the insulating base 21 is poorer than that of metal and other materials, and if deionized water is directly introduced into the insulating base 21, it is easy to cause the insulating base 21 to burst. Therefore, by exposing the contact surface of the heat exchanging part 22 from the upper surface of the insulating base 21, the heat exchanging part 22 can be in direct contact with the insulating layer 1, thereby ensuring good thermal conductivity and improving heat transfer efficiency. At the same time, by making the part of the heat exchanging member 22 other than the contact surface located in the insulating matrix 21 , it can be ensured that the heat exchanging member 22 is suspended relative to the ground.
具體的，熱交換部件22可由金屬材料製成。由於金屬材料普遍具有良好的導熱性能，熱交換部件22能夠快速地與絕緣層1進行熱交換，從而獲得較好的熱交換效果。Specifically, the heat exchange component 22 can be made of metal material. Since metal materials generally have good thermal conductivity, the heat exchange component 22 can rapidly exchange heat with the insulating layer 1 , thereby obtaining a better heat exchange effect.
在一些可選的實施例中，熱交換部件22例如包括金屬本體和設置在該金屬本體中的加熱元件（例如電阻絲），該加熱元件產生的熱量藉由金屬本體傳導至絕緣層1。需要說明的是，加熱元件的電源接線可以貫穿金屬本體和絕緣基體21引出至絕緣基體21的外部，並且該加熱元件的電源接線需要作絕緣處理，以保證熱交換部件22對地懸浮。In some optional embodiments, the heat exchange component 22 includes, for example, a metal body and a heating element (such as a resistance wire) disposed in the metal body, and the heat generated by the heating element is conducted to the insulating layer 1 through the metal body. It should be noted that the power wiring of the heating element can pass through the metal body and the insulating base 21 and be drawn out of the insulating base 21, and the power wiring of the heating element needs to be insulated to ensure that the heat exchange component 22 is suspended to the ground.
在一些可選的實施例中，可藉由具有導熱性的黏接劑將上述絕緣層1與絕緣基體21黏接，以實現二者的固定。In some optional embodiments, the insulating layer 1 and the insulating base 21 may be bonded with a thermally conductive adhesive to achieve the fixing of the two.
在一些可選的實施例中，如圖1所示，絕緣基體21上設置有凹槽211，且該凹槽211的開口位於絕緣基體21的上表面。熱交換部件22設置在凹槽211中，其上表面自凹槽211的開口暴露出來，以用作接觸面221與絕緣層1的下表面接觸。在實際應用中，凹槽211的尺寸應根據熱交換部件22和絕緣層1的尺寸進行設計。具體的，凹槽211的開口大小應小於等於絕緣層1的底面積大小，以使接觸面221能夠完全被絕緣層1覆蓋，從而避免熱交換部件22暴露在製程腔室中，例如，絕緣層1的直徑為295mm，相應的，凹槽211的開口直徑可為282mm至285mm。In some optional embodiments, as shown in FIG. 1 , a groove 211 is disposed on the insulating base 21 , and the opening of the groove 211 is located on the upper surface of the insulating base 21 . The heat exchange component 22 is disposed in the groove 211 , and its upper surface is exposed from the opening of the groove 211 to serve as a contact surface 221 to contact the lower surface of the insulating layer 1 . In practical applications, the size of the groove 211 should be designed according to the size of the heat exchange component 22 and the insulating layer 1 . Specifically, the size of the opening of the groove 211 should be smaller than or equal to the size of the bottom of the insulating layer 1, so that the contact surface 221 can be completely covered by the insulating layer 1, thereby preventing the heat exchange component 22 from being exposed in the process chamber. For example, the diameter of the insulating layer 1 is 295mm. Correspondingly, the opening diameter of the groove 211 can be 282mm to 285mm.
並且，熱交換部件22與凹槽211彼此相對的側面之間具有預設間隙，即，凹槽211的內周面的尺寸大於熱交換部件22的外周面的尺寸，由於絕緣基體21受熱後會發生膨脹，上述預設間隙的寬度應大於等於絕緣基體21受熱膨脹時，凹槽211的內周面的尺寸變化量，從而能夠防止熱交換部件22與絕緣基體21發生擠壓，造成二者損壞。在實際應用中，該預設間隙應根據絕緣基體21受熱後的膨脹量進行選取，例如，熱交換部件22的厚度為10mm至15mm，熱交換部件22的外周面為圓形，且直徑為280mm，相應的，凹槽211的內部體積應該略大於熱交換部件22的體積，例如凹槽211的深度為12mm至17mm，凹槽211的內周面為圓形，且直徑為282mm至285mm。Moreover, there is a preset gap between the sides of the heat exchange component 22 and the groove 211 facing each other, that is, the size of the inner peripheral surface of the groove 211 is larger than the size of the outer peripheral surface of the heat exchange component 22. Since the insulating base 21 will expand after being heated, the width of the above-mentioned preset gap should be greater than or equal to the amount of change in size of the inner peripheral surface of the groove 211 when the insulating base 21 is heated and expanded, so as to prevent the heat exchange component 22 and the insulating base 21 from being squeezed, causing damage to both. In practical applications, the preset gap should be selected according to the expansion of the insulating base 21 after being heated. For example, the thickness of the heat exchange part 22 is 10 mm to 15 mm, and the outer peripheral surface of the heat exchange part 22 is circular and has a diameter of 280 mm. .
在一些可選的實施例中，如圖3所示，可以利用可壓縮的黏接材料224將上述熱交換部件22完全包覆，即，在上述預設間隙中，以及在熱交換部件22與凹槽211彼此相對的底面之間填充有可壓縮的黏接材料224，並且在熱交換部件22的接觸面221覆蓋有上述黏接材料224，借助黏接材料224，不僅可以將熱交換部件22固定在凹槽211中，而且由於黏接材料224是可壓縮的，其能夠在絕緣基體21受熱發生膨脹時產生適應性形變，此外，覆蓋在接觸面221上的上述黏接材料224能夠填充該接觸面221上的細小凹坑，以使熱交換部件22與絕緣層1充分接觸，從而獲得較好的導熱效果。In some optional embodiments, as shown in FIG. 3 , the above-mentioned heat exchange component 22 can be completely covered by the compressible adhesive material 224, that is, the compressible adhesive material 224 is filled in the above-mentioned preset gap and between the bottom surfaces of the heat exchange component 22 and the groove 211 facing each other, and the contact surface 221 of the heat exchange component 22 is covered with the above-mentioned adhesive material 224. With the help of the adhesive material 224, not only the heat exchange component 22 can be fixed in the groove 211, The bonding material 224 is compressible, and it can produce adaptive deformation when the insulating base 21 is heated and expands. In addition, the above-mentioned bonding material 224 covering the contact surface 221 can fill the small pits on the contact surface 221, so that the heat exchange component 22 is fully in contact with the insulating layer 1, thereby obtaining a better heat conduction effect.
在一些可選的實施例中，黏接材料224包括矽脂或聚四氟乙烯等具有良好導熱性的材料，從而提高熱交換部件22的導熱效果。 實施例2 In some optional embodiments, the adhesive material 224 includes materials with good thermal conductivity such as silicone grease or polytetrafluoroethylene, so as to improve the heat conduction effect of the heat exchange component 22 . Example 2
本實施例提供的靜電卡盤與上述實施例1相比，同樣包括絕緣層1和溫度調節結構2，而區別僅在於：熱交換部件22的結構不同。具體地，如圖4所示，熱交換部件22包括熱交換本體222和設置在該熱交換本體222中的熱交換通道223。其中，熱交換通道223用於藉由輸送熱交換介質來與熱交換本體222進行熱交換，以調節熱交換部件22的整體溫度，從而調節絕緣層1的溫度。需要說明的是，圖4僅示意性地用方框示出了熱交換通道223的位置，但並未示出熱交換通道223的具體結構。Compared with the above-mentioned embodiment 1, the electrostatic chuck provided in this embodiment also includes the insulating layer 1 and the temperature adjustment structure 2, and the only difference is that the structure of the heat exchange component 22 is different. Specifically, as shown in FIG. 4 , the heat exchange component 22 includes a heat exchange body 222 and a heat exchange channel 223 disposed in the heat exchange body 222 . Wherein, the heat exchanging channel 223 is used for exchanging heat with the heat exchanging body 222 by transporting the heat exchanging medium, so as to adjust the overall temperature of the heat exchanging component 22 , thereby adjusting the temperature of the insulating layer 1 . It should be noted that, FIG. 4 only schematically shows the position of the heat exchange channel 223 with boxes, but does not show the specific structure of the heat exchange channel 223 .
在一些可選的實施例中，熱交換介質可採用去離子水，其具有良好的絕緣性，以防止熱交換部件22藉由熱交換介質與地線或更靠近地線的導電體導通，從而保證靜電卡盤的對地電容較小。但本實施例不限於此，在實際生產中，熱交換介質採用兼具較好的絕緣性和傳熱性的流體材料即可。In some optional embodiments, the heat exchange medium can be deionized water, which has good insulation, so as to prevent the heat exchange component 22 from conducting with the ground wire or a conductor closer to the ground wire through the heat exchange medium, so as to ensure that the ground capacitance of the electrostatic chuck is small. However, this embodiment is not limited thereto. In actual production, the heat exchange medium may be a fluid material with good insulation and heat transfer properties.
在一些可選的實施例中，熱交換通道223相對於接觸面221均勻分佈，以使絕緣層1受熱均勻，從而可以提高晶圓的溫度均勻性。In some optional embodiments, the heat exchange channels 223 are evenly distributed relative to the contact surface 221 , so that the insulating layer 1 is evenly heated, thereby improving the temperature uniformity of the wafer.
在一些可選的實施例中，如圖5所示，上述熱交換通道包括複數個環形子通道，複數個環形子通道等間距分佈在以上述接觸面221的中心為圓心，且半徑不同的複數個圓周上；其中，半徑最小的環形子通道2235為圓弧形通道段，其餘的環形子通道均由相對於接觸面221的徑向對稱分佈，且相互間隔的兩個半環形通道段組成，例如圖5示出了四個環形子通道，除半徑最小的環形子通道2235之外，其餘三個環形子通道中，半徑最大的環形子通道由兩個半環形通道段（2231a，2231b）組成，中間的環形子通道由兩個半環形通道段（2237a，2237b）組成，半徑最小的環形子通道由兩個半環形通道段（2236a，2236b）組成。In some optional embodiments, as shown in FIG. 5 , the above-mentioned heat exchange channel includes a plurality of annular sub-channels, and the plurality of annular sub-channels are equidistantly distributed on a plurality of circles with the center of the above-mentioned contact surface 221 as the center and different radii; wherein, the annular sub-channel 2235 with the smallest radius is an arc-shaped channel segment, and the remaining annular sub-channels are composed of two semi-annular channel segments that are radially symmetrically distributed relative to the contact surface 221 and are spaced from each other. Except for the sub-channel 2235, among the remaining three annular sub-channels, the annular sub-channel with the largest radius is composed of two semi-annular channel segments (2231a, 2231b), the middle annular sub-channel is composed of two semi-annular channel segments (2237a, 2237b), and the annular sub-channel with the smallest radius is composed of two semi-annular channel segments (2236a, 2236b).
其中，半徑最大的兩個半環形通道段（2231a，2231b）彼此相對的一端分別用作熱交換通道的輸入端2233和輸出端2234。並且，沿由熱交換通道的輸入端2233至輸出端2234的方向，所有的半環形通道段和圓弧形通道段2235藉由複數個子連接通道2232首尾串接連通，以形成一條連續通道。例如，如圖5所示，半環形通道段2231a、半環形通道段2237a和半環形通道段2236a藉由兩個子連接通道2232首尾串接連通，然後半環形通道段2236a藉由一個子連接通道2232與圓弧形通道段2235的一端串接連通，圓弧形通道段2235的另一端藉由一個子連接通道2232與半環形通道段2236b串接連通；再然後半環形通道段2236b、半環形通道段2237b、半環形通道段2231b藉由兩個子連接通道2232首尾串接連通，這樣，在輸入端2233至輸出端2234之間即形成一條連續通道，以使熱交換介質能夠從熱交換通道的輸入端2233流入，並在前述的連續通道中流動，然後從熱交換通道的輸出端2234流出，從而使熱交換介質能夠在熱交換通道中充分進行熱交換。但是，本實施例並不局限於此，熱交換通道可根據實際生產需要進行設置，使其能夠均勻分佈並使熱交換介質的流動路徑足夠長，以使絕緣層1受熱均勻且充分。Wherein, opposite ends of the two semi-annular channel segments ( 2231 a , 2231 b ) with the largest radii are respectively used as the input end 2233 and the output end 2234 of the heat exchange channel. Moreover, along the direction from the input end 2233 to the output end 2234 of the heat exchange channel, all the semi-circular channel sections and arc-shaped channel sections 2235 are connected in series through a plurality of sub-connecting channels 2232 to form a continuous channel. For example, as shown in Figure 5, semi-annular channel section 2231a, semi-annular channel section 2237a and semi-annular channel section 2236a are connected in series by two sub-connecting channels 2232, and then semi-annular channel section 2236a is connected in series with one end of arc-shaped channel section 2235 by a sub-connecting channel 2232, and the other end of arc-shaped channel section 2235 is connected in series with semi-annular channel section 2236b by a sub-connecting channel 2232 Then the semi-annular channel section 2236b, the semi-annular channel section 2237b, and the semi-annular channel section 2231b are connected in series through two sub-connecting channels 2232, so that a continuous channel is formed between the input end 2233 and the output end 2234, so that the heat exchange medium can flow in from the input end 2233 of the heat exchange channel, flow in the aforementioned continuous channel, and then flow out from the output end 2234 of the heat exchange channel, so that the heat exchange medium can be exchanged in the heat exchange There is sufficient heat exchange in the channel. However, this embodiment is not limited thereto, and the heat exchange channels can be set according to actual production needs, so that they can be evenly distributed and the flow path of the heat exchange medium is long enough to make the insulating layer 1 evenly and fully heated.
在一些可選的實施例中，如圖4所示，靜電卡盤還包括輸入管道31、輸出管道32和溫控裝置3。其中，輸入管道31的兩端分別與熱交換通道223的輸入端2233和溫控裝置3的輸出端連接；輸出管道32的兩端分別與熱交換通道223的輸出端2234和溫控裝置3的輸入端連接；溫控裝置3用於調節熱交換介質的溫度，以使熱交換介質在進行了熱交換後能夠被調節至預設溫度後再流入熱交換通道223中，從而調節熱交換部件22的整體溫度。In some optional embodiments, as shown in FIG. 4 , the electrostatic chuck further includes an input pipeline 31 , an output pipeline 32 and a temperature control device 3 . Wherein, the two ends of input pipeline 31 are connected with the input end 2233 of heat exchange channel 223 and the output end of temperature control device 3 respectively;
在一些可選的實施例中，在熱交換本體222上設置有自熱交換本體222的下表面由下而上分別貫通至熱交換通道223的輸入端和輸出端的兩個第一通孔225；在絕緣基體22上設置有自絕緣基體22的下表面由下而上貫通至絕緣基體22的與熱交換本體222的下表面相對的表面的兩個第二通孔226；其中，兩個第一通孔225的一端分別與熱交換通道223的輸入端和輸出端連接，兩個第一通孔225的另一端分別與兩個第二通孔226的一端連接，兩個第二通孔226的另一端分別與輸入管道31和輸出管道32的一端連接。由此，可以實現輸入管道31和輸出管道32分別與熱交換通道223的輸入端和輸出端的連接。當然，在實際應用中，輸入管道31和輸出管道32分別與熱交換通道223的輸入端和輸出端的連接方式並不局限於此，本發明實施例對此沒有特別的限制。需要說明的是，圖4僅示意性地示出了輸入管道31和輸出管道32分別與熱交換通道223的輸入端和輸出端的連接位置，該連接位置可以根據熱交換通道223的輸入端和輸出端的具體位置進行適應性調整。In some optional embodiments, the heat exchange body 222 is provided with two first through holes 225 that penetrate from the lower surface of the heat exchange body 222 to the input end and the output end of the heat exchange channel 223 from bottom to top; the insulating base 22 is provided with two second through holes 226 that penetrate from the lower surface of the insulating base 22 to the surface opposite to the lower surface of the heat exchange body 222 of the insulating base 22; wherein, one end of the two first through holes 225 The other ends of the two first through holes 225 are respectively connected to one ends of the two second through holes 226, and the other ends of the two second through holes 226 are respectively connected to one end of the input pipe 31 and the output pipe 32. Thus, the connection of the input pipe 31 and the output pipe 32 to the input end and the output end of the heat exchange channel 223 can be realized respectively. Of course, in practical application, the way of connecting the input pipe 31 and the output pipe 32 to the input end and the output end of the heat exchange channel 223 respectively is not limited thereto, and this embodiment of the present invention has no special limitation thereto. It should be noted that FIG. 4 only schematically shows the connection positions of the input pipe 31 and the output pipe 32 with the input end and the output end of the heat exchange channel 223 respectively, and the connection position can be adaptively adjusted according to the specific positions of the input end and the output end of the heat exchange channel 223.
在一些可選的實施例中，輸入管道31和輸出管道32均為絕緣軟管，以防止熱交換部件22藉由管道與地線或更靠近地線的導電體導通，從而實現對地懸浮地效果，保證靜電卡盤的對地電容較小。In some optional embodiments, both the input pipe 31 and the output pipe 32 are insulating hoses, so as to prevent the heat exchange component 22 from conducting with the ground wire or a conductor closer to the ground wire through the pipe, so as to achieve the ground suspension effect and ensure that the ground capacitance of the electrostatic chuck is small.
本實施例提供的靜電卡盤的其他結構和功能與上述實施例1相同，在此不再贅述。Other structures and functions of the electrostatic chuck provided in this embodiment are the same as those in Embodiment 1 above, and will not be repeated here.
綜上所述，本發明上述各個實施例提供的靜電卡盤，其溫度調節結構藉由採用絕緣基體，同時使設置在該絕緣基體中的熱交換部件對地懸浮，可以使溫度調節結構整體對地絕緣，這與先前技術相比，可以增大設置在溫度調節結構上方的直流電極與大地之間的距離，從而可以減小靜電卡盤的對地電容，進而可以減少在對地電容上損耗的功率，使更多的功率用於加工過程，以獲得較高的加工效率，從而可以滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。 實施例3 To sum up, the electrostatic chuck provided by the above-mentioned embodiments of the present invention adopts an insulating base and suspends the heat exchange components disposed in the insulating base against the ground, so that the temperature regulating structure can be insulated from the ground as a whole. Compared with the prior art, the distance between the DC electrode disposed above the temperature regulating structure and the ground can be increased, thereby reducing the ground capacitance of the electrostatic chuck, thereby reducing the power loss on the ground capacitance, and allowing more power to be used in the processing process to obtain higher processing efficiency and meet the requirements of plasma immersion. There is no requirement for ion implantation technology on the ground capacitance of the electrostatic chuck. Example 3
本實施例提供一種半導體加工設備，其包括反應腔室和設置在反應腔室中的靜電卡盤。靜電卡盤採用實施例1、2中所述的靜電卡盤，用於固定晶圓。This embodiment provides a semiconductor processing device, which includes a reaction chamber and an electrostatic chuck disposed in the reaction chamber. The electrostatic chuck adopts the electrostatic chuck described in Embodiment 1 and 2 to fix the wafer.
本實施例提供的半導體加工設備可以為電漿浸沒離子注入設備，用於對晶圓進行電漿浸沒離子注入製程。The semiconductor processing equipment provided in this embodiment may be a plasma immersion ion implantation equipment, which is used to perform a plasma immersion ion implantation process on a wafer.
本發明實施例提供的半導體加工設備，採用了本發明實施例提供的上述靜電卡盤固定晶圓，由於該靜電卡盤的對地電容較小，可以減少在對地電容上的損耗的功率，使更多的功率用於加工過程，因此本發明實施例提供的半導體加工設備可以獲得較高的加工效率，從而可以滿足電漿浸沒離子注入技術對靜電卡盤的對地電容的要求。The semiconductor processing equipment provided by the embodiment of the present invention adopts the above-mentioned electrostatic chuck provided by the embodiment of the present invention to fix the wafer. Since the ground capacitance of the electrostatic chuck is small, the power lost on the ground capacitance can be reduced, and more power can be used in the processing process. Therefore, the semiconductor processing equipment provided by the embodiment of the present invention can obtain higher processing efficiency, thereby meeting the requirements of the plasma immersion ion implantation technology on the ground capacitance of the electrostatic chuck.
可以理解的是，以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式，然而本發明並不局限於此。對於本領域內的普通技術人員而言，在不脫離本發明的精神和實質的情況下，可以做出各種變型和改進，這些變型和改進也視為本發明的保護範圍。 It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.
1:絕緣層 2:溫度調節結構 11:直流電極 21:絕緣基體 22:熱交換部件 211:凹槽 221:接觸面 222:熱交換本體 223:熱交換通道 224:黏接材料 225:第一通孔 226:第二通孔 2231a、2231b:半環形通道段 2232:子連接通道 2233:輸入端 2234:輸出端 2235:圓弧形通道段 2236a、2236b:半環形通道段 2237a、2237b:半環形通道段 3:溫控裝置 31:輸入管道 32:輸出管道 L:電漿等效電感 R1:靜電卡盤對地等效電阻 R2:電漿等效電容 C2:靜電卡盤等效電容 C1:靜電卡盤對地電容 A:交點 1: Insulation layer 2: Temperature regulation structure 11: DC electrode 21: Insulation matrix 22:Heat exchange components 211: Groove 221: contact surface 222: heat exchange body 223: heat exchange channel 224: Adhesive material 225: the first through hole 226: Second through hole 2231a, 2231b: semi-circular channel section 2232: sub connection channel 2233: input terminal 2234: output terminal 2235: arc channel segment 2236a, 2236b: semi-circular channel section 2237a, 2237b: semi-circular channel section 3: Temperature control device 31: Input pipeline 32: Output pipeline L: plasma equivalent inductance R1: Equivalent resistance of electrostatic chuck to ground R2: plasma equivalent capacitance C2: Equivalent capacitance of electrostatic chuck C1: electrostatic chuck capacitance to ground A: Intersection
圖1為本發明實施例1提供的靜電卡盤的結構示意圖； 圖2為本發明實施例1提供的靜電卡盤的等效電路圖； 圖3為本發明實施例1提供的靜電卡盤的局部剖視圖； 圖4為本發明實施例2提供的靜電卡盤的結構示意圖； 圖5為本發明實施例2提供的熱交換通道的結構示意圖。 FIG. 1 is a schematic structural view of an electrostatic chuck provided in Embodiment 1 of the present invention; Fig. 2 is the equivalent circuit diagram of the electrostatic chuck provided by Embodiment 1 of the present invention; FIG. 3 is a partial cross-sectional view of the electrostatic chuck provided by Embodiment 1 of the present invention; 4 is a schematic structural diagram of an electrostatic chuck provided in Embodiment 2 of the present invention; Fig. 5 is a schematic structural diagram of the heat exchange channel provided by Embodiment 2 of the present invention.
22:熱交換部件 22:Heat exchange components
211:凹槽 211: Groove
222:熱交換本體 222: heat exchange body
223:熱交換通道 223: heat exchange channel
225:第一通孔 225: the first through hole
226:第二通孔 226: Second through hole
3:溫控裝置 3: Temperature control device
31:輸入管道 31: Input pipeline
32:輸出管道 32: Output pipeline
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| US20030010292A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Electrostatic chuck with dielectric coating |
| US20150270149A1 (en) * | 2014-03-20 | 2015-09-24 | Shinko Electric Industries Co., Ltd. | Temperature adjustment device |
| TW201729324A (en) * | 2016-01-29 | 2017-08-16 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| US20190115241A1 (en) * | 2017-10-12 | 2019-04-18 | Applied Materials, Inc. | Hydrophobic electrostatic chuck |
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| US5452510A (en) * | 1993-12-20 | 1995-09-26 | International Business Machines Corporation | Method of making an electrostatic chuck with oxide insulator |
| JP2001302330A (en) * | 2000-04-24 | 2001-10-31 | Ibiden Co Ltd | Ceramic substrate |
| JP2015115421A (en) * | 2013-12-10 | 2015-06-22 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
| JP2017199851A (en) * | 2016-04-28 | 2017-11-02 | 株式会社ディスコ | Decompression treatment device |
| CN107546168B (en) * | 2016-06-24 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Wafer adsorption method, lower electrode system and semiconductor processing device |
| CN108538744B (en) * | 2017-03-01 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Chuck device and semiconductor processing equipment |
| JP6971183B2 (en) * | 2018-03-23 | 2021-11-24 | 新光電気工業株式会社 | Board fixing device |
| JP7329917B2 (en) * | 2018-11-30 | 2023-08-21 | 新光電気工業株式会社 | Substrate fixing device |
| CN112864079B (en) * | 2021-01-25 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and semiconductor processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030010292A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Electrostatic chuck with dielectric coating |
| US20150270149A1 (en) * | 2014-03-20 | 2015-09-24 | Shinko Electric Industries Co., Ltd. | Temperature adjustment device |
| TW201729324A (en) * | 2016-01-29 | 2017-08-16 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| US20190115241A1 (en) * | 2017-10-12 | 2019-04-18 | Applied Materials, Inc. | Hydrophobic electrostatic chuck |
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