TWI806872B

TWI806872B - Plating device and non-transitory computer readable storage medium

Info

Publication number: TWI806872B
Application number: TW107118440A
Authority: TW
Inventors: 社本光弘; 下山正; 長井瑞樹; 中田勉
Original assignee: 日商荏原製作所股份有限公司
Priority date: 2017-06-16
Filing date: 2018-05-30
Publication date: 2023-07-01
Also published as: CN109137051A; CN109137051B; JP2019002051A; KR20180137401A; JP6993115B2; KR102463909B1; TW201905248A

Abstract

本發明提供一種鍍覆裝置及非暫時性電腦可讀存儲介質，鍍覆裝置實現設想今後將需求的高鍍覆品質的至少一部分，並且進而對多個基板進行鍍覆。鍍覆裝置具有可保持多個基板的基板固持器、及可保持多個陽極的陽極固持器。多個陽極各自是與對應的基板相向地配置。將調節板設於陽極固持器、與和此陽極固持器對應的基板固持器之間。調節板具有在陽極與基板之間流動的電流能穿過的筒狀的貫穿部。針對虛設基板，在陽極固持器、與和此陽極固持器對應的基板固持器之間設有封閉部。封閉部中，可在可保持的陽極與可保持的基板之間流動的電流無法穿過。The present invention provides a plating device and a non-transitory computer-readable storage medium. The plating device realizes at least a part of the high plating quality expected to be required in the future, and further coats a plurality of substrates. The plating apparatus has a substrate holder capable of holding a plurality of substrates, and an anode holder capable of holding a plurality of anodes. Each of the plurality of anodes is disposed facing the corresponding substrate. The regulating plate is arranged between the anode holder and the substrate holder corresponding to the anode holder. The regulating plate has a cylindrical penetration portion through which a current flowing between the anode and the substrate can pass. For the dummy substrate, a sealing portion is provided between the anode holder and the substrate holder corresponding to the anode holder. A current that can flow between the holdable anode and the holdable substrate cannot pass through the closed portion.

Description

鍍覆裝置及非暫時性電腦可讀存儲介質Plating device and non-transitory computer readable storage medium

本發明是關於一種鍍覆裝置。The present invention relates to a coating device.

以前，一直進行在半導體晶片或印刷基板等基板的表面形成配線或凸塊（突起狀電極）等的操作。關於形成此配線及凸塊等的方法，電解電鍍法已為人所知。Conventionally, the work of forming wiring, bumps (protruding electrodes), etc. on the surface of a substrate such as a semiconductor wafer or a printed circuit board has been performed. An electrolytic plating method is known as a method for forming such wiring, bumps, and the like.

電解電鍍法鍍覆裝置中，通常對例如具有300 mm的直徑的晶片等圓形基板進行鍍覆處理。然而，近年來不限於此種圓形基板，從效費比（cost-effective）的觀點來看，半導體市場上方形基板的需求增加，要求對方形基板進行清洗、研磨或鍍覆等。In an electrolytic plating method plating apparatus, a circular substrate such as a wafer having a diameter of 300 mm is usually subjected to a plating process. However, in recent years, not limited to such circular substrates, demand for square substrates has increased in the semiconductor market from a cost-effective point of view, and cleaning, polishing, plating, etc. have been required for square substrates.

鍍覆裝置具有鍍覆槽，在此鍍覆槽內例如收容有保持基板的基板固持器、保持陽極的陽極固持器、及調節板（regulation plate，遮蔽板）等。日本專利特開2016-160521號所記載的現有的半導體基板用鍍覆裝置中，基板尺寸相對較大，並未設想對多個基板同時進行處理。但是，近年來形成在基板上的晶片（chip）的尺寸微細化，正推進三維封裝技術等晶片的多層構造化的技術開發。另外，擴散型（Fan-out）技術（在超過晶片面積的廣泛區域中形成再配線層的技術）出現，另外物聯網（The Internet of things，IoT）技術進一步進展，由此設想進一步需求具有多樣構造的晶片等高度的封裝技術。對設於多種、多樣的基板上的通道（via）、淺槽（trench）、通孔（through hole）等進行鍍覆、成膜的需求也不斷高漲。尤其關於對縱橫比高的通道的填埋性能或鍍覆速度，可認為電解電鍍技術與無電解電鍍技術等相比具有優越性。The plating apparatus has a plating tank, for example, a substrate holder for holding a substrate, an anode holder for holding an anode, a regulation plate (shielding plate) and the like are housed in the plating tank. In the conventional coating apparatus for semiconductor substrates described in Japanese Patent Application Laid-Open No. 2016-160521, the size of the substrates is relatively large, and it is not conceivable to simultaneously process a plurality of substrates. However, in recent years, the size of chips formed on substrates has been miniaturized, and technological development of multilayer structures of chips such as three-dimensional packaging technology has been promoted. In addition, the emergence of fan-out technology (a technology that forms a rewiring layer in a wide area exceeding the chip area) and the further development of the Internet of things (IoT) technology have led to the assumption that higher packaging technologies such as chips with various structures will be required. The demand for plating and film formation on vias, trenches, through holes, etc. provided on various and diverse substrates is also increasing. In particular, it is considered that the electrolytic plating technique is superior to the electroless plating technique and the like with respect to the filling performance and the plating speed for vias with a high aspect ratio.

跟隨此種技術的潮流，往後以下技術在今後將變得重要：不使產率（through-put）降低，另外，對具有各不相同的特徵的尺寸相對較小的多樣基板同時進行電解電鍍。然而，在需求鍍覆的膜厚管理等高品質管理的對半導體基板的鍍覆技術中，迄今為止以下技術尚不存在：實現設想今後將需求的所述高品質，並且同時對多個基板進行鍍覆。 [現有技術文獻] [專利文獻]Following the trend of this technology, the following technology will become important in the future: simultaneously performing electrolytic plating on various substrates with relatively small sizes having different characteristics without reducing the through-put. However, in the plating technology for semiconductor substrates requiring high-quality control such as film thickness control of plating, there has been no technology for simultaneously plating a plurality of substrates while achieving the high quality expected to be required in the future. [Prior Art Documents] [Patent Documents]

[專利文獻1]日本專利特開2016-160521號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-160521

[發明所要解決的問題] 本發明的一形態是為了消除所述問題點中的一個而成，其目的在於提供一種鍍覆裝置，此鍍覆裝置實現設想今後將需求的所述高鍍覆品質的至少一部分，並且進而對多個基板進行鍍覆。[Problem to be Solved by the Invention] An aspect of the present invention is formed to solve one of the above-mentioned problems, and an object of the present invention is to provide a plating apparatus that realizes at least a part of the high plating quality expected to be required in the future, and further coats a plurality of substrates.

[解決問題的技術手段] 為了解決所述課題，第一形態中採用如下鍍覆裝置等構成，此鍍覆裝置具有：多個基板固持器，以各自可保持一個基板的方式構成；多個陽極固持器，以各自可保持一個陽極的方式構成，且所述多個陽極與所述多個基板以一對一而對應，所述多個陽極各自是以與對應的所述基板相向地配置的方式構成；多個第一遮蔽部，逐個設於對應的所述陽極與所述基板之間，且所述第一遮蔽部各自是以具有形成於所述對應的陽極與所述對應的基板之間的電力線能穿過的筒狀的貫穿部，並且所述貫穿部調整所述對應的陽極與所述對應的基板之間的電場的方式構成。[Technical means to solve the problem] In order to solve the above-mentioned problem, in the first form, a coating device is configured as follows. A cylindrical penetration portion through which electric lines of force between the corresponding anode and the corresponding substrate can pass, and the penetration portion is configured in such a manner as to adjust an electric field between the corresponding anode and the corresponding substrate.

本實施形態中，以筒狀的貫穿部調整對應的陽極與對應的基板之間的電場的方式構成。以前，在一個鍍覆槽內對多個基板進行鍍覆的情況下，若處理片數變化，則無法形成均一的電流電力線。本實施形態中，設有以調整電場的方式構成的第一遮蔽部，因此即便處理片數變化，在與同時進行處理的多個基板對應的多個貫穿部中，電流電力線的分佈也均一。因此，能提供即便在處理片數變化的情況下，也對需鍍覆的所有基板施加與以前相比物理性質、化學性質均一的金屬膜的鍍覆裝置。能提供實現設想今後將需求的所述高鍍覆品質的至少一部分，並且進而對多個基板進行鍍覆的鍍覆裝置。此外，所謂物理性質、化學性質，是指基板的金屬膜的膜厚、化學物質組成、表面形態、密度。所謂物理性質、化學性質均一，是指一個基板內的各部位的物理性質、化學性質的基板內分佈在所有處理基板間相同。In this embodiment, the cylindrical penetrating portion is configured to adjust the electric field between the corresponding anode and the corresponding substrate. Conventionally, when a plurality of substrates were plated in one plating tank, uniform electric current lines could not be formed if the number of substrates to be processed varied. In this embodiment, the first shielding portion configured to adjust the electric field is provided, so even if the number of substrates to be processed changes, the distribution of current and force lines is uniform in the plurality of through portions corresponding to the plurality of substrates processed simultaneously. Therefore, it is possible to provide a plating apparatus that applies a metal film having uniform physical and chemical properties compared to conventional ones to all substrates to be plated, even when the number of substrates to be plated varies. It is possible to provide a plating apparatus that realizes at least a part of the high plating quality expected to be required in the future, and further coats a plurality of substrates. In addition, physical properties and chemical properties refer to the film thickness, chemical substance composition, surface morphology, and density of the metal film on the substrate. The term "uniform physical properties and chemical properties" means that the distribution of physical properties and chemical properties in each part of one substrate is the same among all processed substrates.

第二形態中採用技術方案1所述的鍍覆裝置的構成，其中所述多個第一遮蔽部中的至少一個為封閉部，此封閉部是以具有用於封閉所述貫穿部的第二遮蔽部，並且利用所述第二遮蔽部使形成於可保持的所述陽極與可保持的所述基板之間的所述電力線無法穿過的方式構成，所述多個第一遮蔽部中的至少另一個不具有所述第二遮蔽部。In the second aspect, the coating apparatus according to claim 1 is adopted, wherein at least one of the plurality of first shielding parts is a sealing part, the sealing part has a second shielding part for sealing the penetration part, and the second shielding part prevents the electric force lines formed between the holdable anode and the holdable substrate from passing through, and at least one of the plurality of first shielding parts does not have the second shielding part.

本實施形態中，針對未配置需鍍覆基板的基板固持器及陽極固持器，設置封閉部。利用封閉部使電力線無法穿過。對於形成於配置有需鍍覆基板的基板固持器及陽極固持器之間的電力線而言，由於存在封閉部，因此減少電力線穿過封閉部、即向封閉部洩漏的情況。In this embodiment, a sealing portion is provided for the substrate holder and the anode holder where no substrate to be plated is arranged. The power line cannot be passed through by the sealing part. For the electric power line formed between the substrate holder and the anode holder on which the substrate to be plated is disposed, the closed portion reduces the situation that the electric power line passes through the closed portion, that is, leaks to the closed portion.

現有技術的情況下，在基板與陽極之間並無封閉部而僅為貫穿部。穿過貫穿部的電力線受到穿過基板的某個貫穿部和此貫穿部以外的電力線的影響。因此，假設在一個鍍覆槽內對多個基板進行鍍覆的情況下，穿過基板的某個貫穿部的電力線受到穿過其他貫穿部的電力線的影響。即，穿過貫穿部的電力線視基板的某個貫穿部與其他貫穿部處於何種位置關係而變化。另外，在一個鍍覆槽內對多個基板進行鍍覆的情況下，若處理片數變化，則無法形成均一的電力線。本實施形態中，由於設有封閉部，因此即便處理片數變化，在與同時進行處理的多個基板對應的多個貫穿部中，電力線的分佈也均一。因此，能提供即便在處理片數變化的情況下，也對需鍍覆的所有基板施加與以前相比物理性質、化學性質均一的金屬膜的鍍覆裝置。In the case of the prior art, there is no sealing portion between the substrate and the anode but only a penetrating portion. A line of electric force passing through a penetration portion is affected by a certain penetration portion passing through the substrate and lines of electric force other than the penetration portion. Therefore, assuming that a plurality of substrates are plated in one plating tank, electric force lines passing through a certain penetration portion of the substrate are affected by electric force lines passing through other penetration portions. That is, the lines of electric force passing through the penetration portions vary depending on the positional relationship between a certain penetration portion of the substrate and other penetration portions. In addition, when a plurality of substrates are plated in one plating tank, uniform lines of electric force cannot be formed if the number of substrates to be processed varies. In this embodiment, since the sealing portion is provided, even if the number of substrates to be processed changes, the distribution of electric lines is uniform in a plurality of penetration portions corresponding to a plurality of substrates that are processed simultaneously. Therefore, it is possible to provide a plating apparatus that applies a metal film having uniform physical and chemical properties compared to conventional ones to all substrates to be plated, even when the number of substrates to be plated varies.

另外，本實施形態中，除了具有封閉部以外，使用筒狀的貫穿部。因此，貫穿部各自相互的電力線的影響少，獨立性高。能提供在單一電解槽內對多個基板同時進行鍍覆，且可對各基板控制膜厚分佈的鍍覆裝置。In addition, in this embodiment, instead of having the closing part, a cylindrical penetration part is used. Therefore, there is little influence of the mutual electric power lines of the penetrating parts, and the independence is high. It is possible to provide a plating device that can simultaneously plate multiple substrates in a single electrolytic tank and control the film thickness distribution for each substrate.

第三形態中採用如下鍍覆裝置的構成：所述第二遮蔽部具有分別配置於所述貫穿部的所述基板固持器側和所述陽極固持器側的第三遮蔽部。In the third aspect, the plating apparatus is configured such that the second shielding portion has third shielding portions disposed on the substrate holder side and the anode holder side of the penetrating portion, respectively.

第四形態中採用如下鍍覆裝置的構成：可對所述封閉部裝卸所述第二遮蔽部。In the fourth aspect, the configuration of the plating apparatus is adopted in which the second shielding portion can be attached to and detached from the sealing portion.

第五形態中採用如下鍍覆裝置的構成：所述第二遮蔽部具有能在所述第二遮蔽部中形成開口部的開口形成機構，在封閉所述貫穿部時，利用所述開口形成機構封閉所述開口部。In the fifth aspect, the coating apparatus is configured such that the second shielding portion has opening forming means capable of forming an opening in the second shielding portion, and the opening is closed by the opening forming means when closing the penetrating portion.

第六形態中採用如下鍍覆裝置的構成：所述第一遮蔽部具有調整所述貫穿部的開口面積的調整機構，且所述調整機構可封閉所述貫穿部。In the sixth aspect, the coating device is configured such that the first shielding portion has an adjustment mechanism for adjusting an opening area of the penetration portion, and the adjustment mechanism can close the penetration portion.

第七形態中採用如下鍍覆裝置的構成：設有所述封閉部的所述陽極固持器具有設於此陽極固持器可保持的所述陽極與此封閉部之間的第四遮蔽部，且所述第四遮蔽部是以形成於此陽極與所述基板之間的所述電力線無法穿過的方式構成，以及/或者設有所述封閉部的所述基板固持器具有設於此基板固持器可保持的此基板與此封閉部之間的第五遮蔽部，所述第五遮蔽部是以形成於所述陽極與所述基板之間的所述電力線無法穿過的方式構成。In the seventh form, the coating device is configured as follows: the anode holder provided with the sealing part has a fourth shielding part provided between the anode that can be held by the anode holder and the sealing part, and the fourth shielding part is configured in such a way that the electric line formed between the anode and the substrate cannot pass through, and/or the substrate holder provided with the sealing part has a fifth shielding part provided between the substrate that can be held by the substrate holder and the sealing part, and the fifth shielding part is formed between the anode and the substrate. constructed in such a way that the power lines cannot pass through.

第八形態中採用如下鍍覆裝置的構成，此鍍覆裝置具有：多個基板固持器，以各自保持一個基板的方式構成；多個陽極固持器，以各自保持一個陽極的方式構成，且所述多個陽極與所述多個基板以一對一而對應，所述多個陽極各自是以與對應的一個所述基板相向地配置的方式構成；以及多個遮蔽部，針對所述陽極固持器各自設置一個，且所述遮蔽部各自是以設於對應的此陽極固持器與所述基板固持器之間，並且具有形成於所述陽極與所述基板之間的電力線能穿過的筒狀的貫穿部的方式構成；且形成所述貫穿部各自的所述遮蔽部的壁部的所述陽極固持器側是在對應的所述陽極的外周附近配置於所述陽極固持器上，由所述貫穿部各自所形成的貫穿空間彼此分別獨立。In the eighth aspect, the coating apparatus is configured as follows: a plurality of substrate holders configured to hold one substrate each; a plurality of anode holders configured to each hold one anode, and the plurality of anodes correspond to the plurality of substrates in a one-to-one manner, and each of the plurality of anodes is configured in such a manner that it is arranged to face the corresponding one of the substrates; The anode holder is formed on the anode holder side of the wall portion of the shielding portion forming each of the through portions through which a line of electric force can pass between the anode and the substrate, and the anode holder side is arranged on the anode holder near the outer periphery of the corresponding anode, and the through spaces formed by the respective through portions are independent of each other.

本實施形態中，筒狀的貫穿空間彼此分別獨立，各基板被遮蔽部分別包圍。因此，貫穿部各自相互的電力線的影響少，獨立性高。能提供在單一電解槽內對多個基板同時進行鍍覆，且可對各基板分別控制膜厚分佈的鍍覆裝置。由於獨立性高，因此即便處理片數變化，對於同時進行處理的多個基板而言，電力線的分佈也均一。能提供即便在處理片數變化的情況下，也對需鍍覆的所有基板施加物理性質、化學性質均一的金屬膜的鍍覆裝置。In this embodiment, the cylindrical penetrating spaces are independent from each other, and the respective substrates are respectively surrounded by the shielding portions. Therefore, there is little influence of the mutual electric power lines of the penetrating parts, and the independence is high. It is possible to provide a plating device that can simultaneously plate a plurality of substrates in a single electrolytic tank, and can control the film thickness distribution for each substrate individually. Since the independence is high, even if the number of substrates to be processed varies, the distribution of power lines is uniform for multiple substrates that are processed simultaneously. It is possible to provide a plating device that applies a metal film with uniform physical and chemical properties to all substrates to be plated even when the number of sheets to be processed varies.

第九形態中採用如下鍍覆裝置的構成：所述壁部具有用於將所述貫穿部內的氣體從所述貫穿部中去除的第一貫穿孔。In the ninth aspect, the coating device is configured such that the wall portion has a first through hole for removing gas in the through portion from the through portion.

第十形態中採用如下鍍覆裝置的構成：所述壁部具有用於將鍍覆液的添加劑供給於所述貫穿部內的第二貫穿孔。In the tenth aspect, the configuration of the plating apparatus is adopted in which the wall portion has a second through hole for supplying an additive of the plating solution into the through portion.

第十一形態中採用如下鍍覆裝置的構成：具有調整所述添加劑的供給量的供給量調整機構。In an eleventh aspect, the coating apparatus is configured to have a supply amount adjustment mechanism for adjusting the supply amount of the additive.

第十二形態中採用如下鍍覆裝置的構成：所述多個基板固持器一體化，以及/或者所述多個陽極固持器一體化，以及/或者所述多個第一遮蔽部一體化。In the twelfth aspect, the coating apparatus is configured such that the plurality of substrate holders are integrated, and/or the plurality of anode holders are integrated, and/or the plurality of first shielding parts are integrated.

第十三形態中採用如下鍍覆裝置的構成：所述多個基板固持器一體化，以及/或者所述多個陽極固持器一體化，以及/或者所述多個遮蔽部一體化。In the thirteenth aspect, the coating apparatus is configured such that the plurality of substrate holders are integrated, and/or the plurality of anode holders are integrated, and/or the plurality of shielding parts are integrated.

第十四形態中採用如下鍍覆裝置的構成：從自第一直流電源分支的多根第一配線分別獨立地將第一電流供給於所述多個基板各自，以及/或者從自第二直流電源分支的多根第二配線分別獨立地將第二電流供給於所述多個陽極各自。In the fourteenth aspect, the coating apparatus is configured such that a first current is independently supplied to each of the plurality of substrates from a plurality of first wirings branched from the first DC power supply, and/or a second current is independently supplied to each of the plurality of anodes from a plurality of second wirings branched from the second DC power supply.

第十五形態中採用如下鍍覆裝置的構成：流經所述多根第一配線各自的所述第一電流可分別獨立地控制，以及/或者流經所述多根第二配線各自的所述第二電流可分別獨立地控制。In the fifteenth aspect, the plating apparatus is configured such that the first current flowing through each of the plurality of first wirings is independently controllable, and/or the second current flowing through each of the plurality of second wirings is independently controllable.

第十六形態中採用如下非暫時性電腦可讀存儲介質的構成，所述非暫時性電腦可讀存儲介質記錄有用於使電腦作為控制所述多個第一電流及/或所述多個第二電流的接通/斷開（ON/OFF）的控制機構而發揮功能的程式，所述電腦用於控制第十四形態或第十五形態的鍍覆裝置。In the sixteenth aspect, a non-transitory computer-readable storage medium recording a program for causing a computer to function as a control mechanism for controlling ON/OFF of the plurality of first electric currents and/or the plurality of second electric currents is adopted, and the computer is used to control the coating device of the fourteenth aspect or the fifteenth aspect.

以下，參照圖式對本發明的實施形態進行說明。此外，以下的各實施形態中，對相同或相應構件標注相同符號而省略重複說明。圖1為本實施形態的鍍覆裝置的總體配置圖。如圖1所示那樣，此鍍覆裝置100大致分為在基板固持器上裝載方形基板或從基板固持器上卸載方形基板的裝載/卸載部110、對方形基板進行處理的處理部120、以及清洗部20。處理部120還包含進行方形基板的前處理及後處理的前處理、後處理部120A以及對方形基板進行鍍覆處理的鍍覆處理部120B。鍍覆裝置100的裝載/卸載部110、處理部120以及清洗部20分別被各自的框體（frame）包圍。此外，本發明不限於方形基板，也能應用於圓形基板等任意形狀的基板。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in each of the following embodiments, the same reference numerals are assigned to the same or corresponding members, and overlapping descriptions are omitted. FIG. 1 is an overall configuration diagram of a plating apparatus according to this embodiment. As shown in FIG. 1 , this plating apparatus 100 is roughly divided into a loading/unloading unit 110 for loading or unloading a square substrate on or from a substrate holder, a processing unit 120 for processing a square substrate, and a cleaning unit 20 . The processing unit 120 further includes a pre-processing and post-processing unit 120A for performing pre-processing and post-processing of a square substrate, and a plating treatment unit 120B for performing a plating treatment on a square substrate. The loading/unloading unit 110 , the processing unit 120 , and the cleaning unit 20 of the plating apparatus 100 are surrounded by respective frames. In addition, the present invention is not limited to square substrates, but can also be applied to substrates of arbitrary shapes such as circular substrates.

裝載/卸載部110具有兩台承載盒台（cassette table）25及基板裝卸機構29。承載盒台25搭載收納有方形基板的承載盒（cassette）25a。基板裝卸機構29是以對未圖示的基板固持器裝卸方形基板的方式構成。另外，在基板裝卸機構29的附近（例如下方）設有用於收容基板固持器的儲倉（stocker）30。在這些單元25、單元29、單元30的中央，配置有在這些單元間搬送方形基板的由搬送用機器人構成的基板搬送裝置27。基板搬送裝置27是以可利用移動機構28而移動的方式構成。The loading/unloading unit 110 has two cassette tables 25 and a substrate loading and unloading mechanism 29 . The cassette table 25 mounts a cassette 25 a storing a square substrate. The substrate attachment and detachment mechanism 29 is configured to attach and detach a square substrate to a substrate holder (not shown). In addition, a stocker 30 for accommodating substrate holders is provided near (for example, below) the substrate loading and unloading mechanism 29 . In the center of these units 25 , 29 , and 30 , a substrate transfer device 27 composed of a transfer robot that transfers square substrates between these units is disposed. The substrate transfer device 27 is configured to be movable by the moving mechanism 28 .

清洗部20具有對鍍覆處理後的方形基板進行清洗並加以乾燥的清洗裝置20a。基板搬送裝置27是以將鍍覆處理後的方形基板搬送至清洗裝置20a，並將經清洗及乾燥的方形基板從清洗裝置20a中取出的方式構成。The cleaning unit 20 has a cleaning device 20 a for cleaning and drying the plated rectangular substrate. The substrate transfer device 27 is configured to transfer the plated square substrate to the cleaning device 20a, and take out the cleaned and dried square substrate from the cleaning device 20a.

前處理、後處理部120A具有預濕（pre-wet）槽32、預浸泡（pre-soak）槽33、預淋洗（pre-rinse）槽34、吹氣槽35及淋洗槽36。預濕槽32中，將方形基板浸漬在純水中。預浸泡槽33中，將形成於方形基板表面的籽晶層等導電層的表面的氧化膜蝕刻去除。預淋洗槽34中，利用清洗液（純水等）將預浸泡後的方形基板與基板固持器一起清洗。吹氣槽35中，進行清洗後的方形基板的除液。淋洗槽36中，利用清洗液將鍍覆後的方形基板與基板固持器一起清洗。預濕槽32、預浸泡槽33、預淋洗槽34、吹氣槽35、淋洗槽36是依次配置。The pre-processing and post-processing unit 120A has a pre-wet tank 32 , a pre-soak tank 33 , a pre-rinse tank 34 , an air blow tank 35 , and a rinse tank 36 . In the pre-wetting tank 32, the square substrate was immersed in pure water. In the pre-soak tank 33, the oxide film formed on the surface of the conductive layer such as the seed layer formed on the surface of the square substrate is removed by etching. In the pre-rinsing tank 34 , the pre-soaked square substrate is washed together with the substrate holder with a cleaning solution (pure water or the like). In the air blow tank 35, the liquid removal of the cleaned rectangular substrate is performed. In the rinse tank 36 , the plated square substrate is cleaned together with the substrate holder with a cleaning solution. The pre-wet tank 32, the pre-soak tank 33, the pre-rinse tank 34, the blowing tank 35, and the rinse tank 36 are arranged in sequence.

鍍覆處理部120B具有具備溢流（over flow）槽38的多個鍍覆槽39。各鍍覆槽39於內部收納多個方形基板，使方形基板浸漬在內部所保持的鍍覆液中並對方形基板的表面進行鍍銅等鍍覆。此處，鍍覆液的種類並無特別限定，可根據用途而使用各種鍍覆液。The plating treatment unit 120B has a plurality of plating tanks 39 including an overflow (over flow) tank 38 . Each plating tank 39 accommodates a plurality of square substrates inside, immerses the square substrates in the plating solution held inside, and performs plating such as copper plating on the surfaces of the square substrates. Here, the type of plating solution is not particularly limited, and various plating solutions can be used depending on the application.

鍍覆裝置100具有基板固持器搬送裝置37，此基板固持器搬送裝置37位於所述各設備的側方，在這些各設備之間將基板固持器與方形基板一起搬送，採用例如線性馬達（linear motor）方式。此基板固持器搬送裝置37是以在與基板裝卸機構29、預濕槽32、預浸泡槽33、預淋洗槽34、吹氣槽35、淋洗槽36及鍍覆槽39之間搬送基板固持器的方式構成。The plating apparatus 100 has a substrate holder conveying device 37 located on the side of each of the above-mentioned devices, and conveys the substrate holder together with the square substrate between the devices, using, for example, a linear motor method. The substrate holder transfer device 37 is configured to transfer the substrate holder between the substrate loading and unloading mechanism 29 , the pre-wet tank 32 , the pre-soak tank 33 , the pre-rinse tank 34 , the air blow tank 35 , the rinse tank 36 and the plating tank 39 .

圖2為圖1所示的鍍覆裝置中使用的基板固持器的概略平面圖。本實施形態中，能利用一個基板固持器最多保持四片基板並一次進行鍍覆。當鍍覆三片以下的基板時，在不配置基板的地方配置虛設（dummy）基板或絕緣板。本實施形態中，可想到保持一片基板的多個（四個）基板固持器一體化。與此對應，多個陽極固持器一體化，且如下文將述那樣第一遮蔽部與第二遮蔽部一體化。Fig. 2 is a schematic plan view of a substrate holder used in the plating apparatus shown in Fig. 1 . In this embodiment, a maximum of four substrates can be held by one substrate holder, and plating can be performed at one time. When plating less than three substrates, place dummy substrates or insulating plates where no substrates are placed. In this embodiment, it is conceivable that a plurality (four) of substrate holders holding one substrate are integrated. Correspondingly, a plurality of anode holders are integrated, and the first shielding part and the second shielding part are integrated as will be described later.

圖3為圖2所示的基板固持器所保持的方形基板中的一片方形基板的概略平面圖。本實施形態中，能將相同形狀、相同尺寸的四片基板保持在一個基板固持器上，但本發明中，也可將不同形狀、不同尺寸的任意片數的基板保持在一個基板固持器上。另外，也可在一個基板固持器上保持一片以上的基板，將多個此種基板固持器分別獨立地放入到一個鍍覆槽39中，同時進行鍍覆。3 is a schematic plan view of one of the square substrates held by the substrate holder shown in FIG. 2 . In this embodiment, four substrates of the same shape and size can be held on one substrate holder, but in the present invention, any number of substrates of different shapes and sizes can be held on one substrate holder. In addition, one or more substrates may be held on one substrate holder, and a plurality of such substrate holders may be individually placed in one plating tank 39 to perform plating at the same time.

如圖2所示，基板固持器11具有例如氯乙烯製且平板狀的基板固持器本體12、及連結於基板固持器本體12的臂部13。臂部13具有一對底座14，通過將底座14設置於圖1所示的各處理槽的周壁上表面，而垂直地懸吊支持基板固持器11。另外，臂部13上設有以如下方式構成的連接部15：將底座14設置於鍍覆槽39的周壁上表面時，與設於鍍覆槽39上的電接點接觸。由此，基板固持器11與外部電源電連接，對基板固持器11所保持的方形基板施加電壓、電流。As shown in FIG. 2 , the substrate holder 11 has, for example, a flat substrate holder body 12 made of vinyl chloride, and an arm portion 13 connected to the substrate holder body 12 . The arm portion 13 has a pair of bases 14, and the bases 14 are provided on the upper surface of the peripheral wall of each processing tank shown in FIG. 1 to suspend and support the substrate holder 11 vertically. In addition, the arm portion 13 is provided with a connecting portion 15 configured to contact an electrical contact provided on the plating tank 39 when the base 14 is placed on the upper surface of the peripheral wall of the plating tank 39 . Thus, the substrate holder 11 is electrically connected to an external power source, and voltage and current are applied to the rectangular substrate held by the substrate holder 11 .

基板固持器11以圖3所示的方形基板S1的被鍍覆面露出的方式保持方形基板S1。基板固持器11具有與方形基板S1的表面接觸的未圖示的電接點。當基板固持器11保持方形基板S1時，此電接點是以如下方式構成：沿著方形基板S1的相向兩邊或外周四邊而設置，且與圖3所示的接點位置CP1接觸。此外，本實施形態中，方形基板的形狀為正方形或長方形。長方形的方形基板的情況下，電接點是以與長方形的方形基板的長邊或短邊中任意相向兩邊、或外周四邊接觸的方式構成。The substrate holder 11 holds the square substrate S1 such that the surface to be plated of the square substrate S1 shown in FIG. 3 is exposed. The substrate holder 11 has electrical contacts (not shown) that come into contact with the surface of the square substrate S1. When the substrate holder 11 holds the square substrate S1 , the electrical contacts are formed along two opposite sides or the outer four sides of the square substrate S1 and contact the contact position CP1 shown in FIG. 3 . In addition, in this embodiment, the shape of the square substrate is a square or a rectangle. In the case of a rectangular square substrate, the electrical contacts are configured to be in contact with any two opposing long sides or short sides of the rectangular square substrate, or the outer four sides.

使基板固持器11保持方形基板S1或虛設基板68的步驟如下。（1）自儲倉30中將基板固持器11放置到基板裝卸機構29。（2）從承載盒台25中取出方形基板S1。四片的情況下拿出四片基板，分別放置在基板固持器11的下側構件上。三片的情況下僅拿出三片。（3）例如三片的情況下，從承載盒台25中取出虛設基板68，放置在基板固持器11的下側構件上的其餘一片的區域中。此外，本發明中，能同時保持在基板固持器上的基板的個數並非僅限定於四片的情況。（4）接下來，將基板固持器11的上側構件從上方覆蓋，夾持各個基板。關於上側構件，預先設置下文將述的規定的遮蔽板76。（5）利用基板固持器搬送裝置37，將保持有基板的基板固持器11依次運送到前處理、後處理部120A及鍍覆槽39，浸漬在鍍覆液中進行電解電鍍。（6）鍍覆結束後，利用淋洗槽36、吹氣槽35依次清洗。然後利用基板裝卸機構29依次取下方形基板S1，將各個方形基板S1送回承載盒台25。在存在虛設基板68的情況下，將虛設基板68送回承載盒台25。從固持器取下最後的基板後，將基板固持器送回儲倉30。The procedure for causing the substrate holder 11 to hold the square substrate S1 or the dummy substrate 68 is as follows. (1) Place the substrate holder 11 from the magazine 30 onto the substrate loading and unloading mechanism 29 . (2) The square substrate S1 is taken out from the susceptor table 25 . In the case of four substrates, four substrates are taken out and placed on the lower member of the substrate holder 11, respectively. In the case of three sheets, only three sheets are taken out. (3) For example, in the case of three pieces, the dummy substrate 68 is taken out from the susceptor table 25 and placed in the region of the remaining one piece on the lower member of the substrate holder 11 . In addition, in the present invention, the number of substrates that can be simultaneously held on the substrate holder is not limited to four. (4) Next, the upper member of the substrate holder 11 is covered from above to hold each substrate. Regarding the upper side member, a prescribed shielding plate 76 to be described later is provided in advance. (5) The substrate holder 11 holding the substrate is sequentially transported to the pre-processing and post-processing section 120A and the plating tank 39 by the substrate holder conveying device 37 , and is dipped in the plating solution to perform electrolytic plating. (6) After the plating is completed, the rinsing tank 36 and the air blowing tank 35 are used for cleaning in sequence. Then, the square substrates S1 are sequentially removed by the substrate loading and unloading mechanism 29 , and each square substrate S1 is returned to the carrier table 25 . In the case where the dummy substrate 68 exists, the dummy substrate 68 is returned to the susceptor stage 25 . After the last substrate has been removed from the holder, the substrate holder is returned to the magazine 30 .

圖4為表示圖1所示的處理部120B的鍍覆槽39及溢流槽38的概略縱截正面圖。如圖4所示那樣，鍍覆槽39在內部保持鍍覆液Q。在鍍覆槽39的外周具備溢流槽38，以擋住從鍍覆槽39的邊緣溢出的鍍覆液Q。在鍍覆槽39的底部43，連接有具備泵的作為鍍覆液供給路的管線138。FIG. 4 is a schematic longitudinal sectional front view showing the plating tank 39 and the overflow tank 38 of the processing unit 120B shown in FIG. 1 . As shown in FIG. 4 , the plating tank 39 holds the plating solution Q inside. An overflow tank 38 is provided on the outer periphery of the coating tank 39 to catch the plating solution Q overflowing from the edge of the coating tank 39 . The bottom 43 of the plating tank 39 is connected to a pipeline 138 as a plating solution supply path equipped with a pump.

在鍍覆槽39中收納有保持有方形基板S1的基板固持器11。基板固持器11是以將方形基板S1以鉛垂狀態浸漬在鍍覆液Q中的方式配置在鍍覆槽39內。在鍍覆槽39內的與方形基板S1相向的位置，配置有保持在陽極固持器60上的陽極62。陽極62例如能使用含磷銅。方形基板S1與陽極62經由鍍覆電源（下文將述的第一直流電源168）而電連接，通過在方形基板S1與陽極62之間流動電流而在方形基板S1的表面形成鍍覆膜（銅膜）。The substrate holder 11 holding the square substrate S1 is accommodated in the plating tank 39 . The substrate holder 11 is arranged in the plating tank 39 so that the rectangular substrate S1 is immersed in the plating solution Q in a vertical state. An anode 62 held by an anode holder 60 is arranged at a position facing the square substrate S1 in the coating tank 39 . For the anode 62, for example, phosphorus-containing copper can be used. The square substrate S1 and the anode 62 are electrically connected via a plating power supply (first DC power supply 168 described below), and a plating film (copper film) is formed on the surface of the square substrate S1 by flowing current between the square substrate S1 and the anode 62 .

在方形基板S1與陽極62之間，配置有與方形基板S1的表面平行地往返移動而攪拌鍍覆液Q的槳45（下文將述的圖14中所示）。通過利用槳45攪拌鍍覆液Q，能將充分的銅離子均勻地供給於方形基板S1的表面。另外，在槳45與陽極62之間，配置有用於使方形基板S1整個面上的電位分佈更均勻的由電介質構成的調節板50。調節板50具有本體部52及用於使電力線穿過的貫穿部51。遍及與基板固持器11相向的槽39的整個面，調節板50與基板固持器11相向。即，在從基板固持器11朝向調節板50的方向觀察時，調節板50的左端、右端、底部分別與槽39的左端、右端、底部接觸。鍍覆液Q僅能在與方形基板S1相向的貫穿部51中穿過調節板50。Between the square substrate S1 and the anode 62 , a paddle 45 (shown in FIG. 14 to be described later) that moves back and forth parallel to the surface of the square substrate S1 to stir the plating solution Q is disposed. By stirring the plating solution Q with the paddle 45, sufficient copper ions can be uniformly supplied to the surface of the square substrate S1. In addition, between the paddle 45 and the anode 62 , an adjustment plate 50 made of a dielectric is arranged for making the potential distribution on the entire surface of the square substrate S1 more uniform. The adjustment plate 50 has a main body portion 52 and a through portion 51 through which a power line passes. The adjustment plate 50 faces the substrate holder 11 over the entire surface of the groove 39 facing the substrate holder 11 . That is, when viewed from the substrate holder 11 toward the adjustment plate 50 , the left end, right end, and bottom of the adjustment plate 50 are in contact with the left end, right end, and bottom of the groove 39 , respectively. The plating solution Q can pass through the adjustment plate 50 only in the through portion 51 facing the square substrate S1.

圖4、圖5的情況下，在圖2所示的可配置基板的四處中，將基板保持在右上、左下、右下三處，左上一處未配置基板。在未配置基板的一處（以下稱為「非鍍覆電極」）配置有虛設基板68（或絕緣板）。以下，將配置有方形基板S1的三處稱為「鍍覆電極」。In the case of FIG. 4 and FIG. 5 , among the four locations where the substrate can be arranged as shown in FIG. 2 , the substrate is held at the upper right, lower left, and lower right locations, and no substrate is arranged at the upper left location. A dummy substrate 68 (or insulating plate) is arranged at a place where no substrate is arranged (hereinafter referred to as “non-plating electrode”). Hereinafter, the three places where the square substrate S1 is arranged are referred to as "plating electrodes".

圖5為圖4所示的鍍覆槽39的AA截面圖。圖4為圖5的AA截面圖。圖5中省略槳45。如圖4、圖5所示那樣，與鍍覆電極對應的位置的調節板50、及與非鍍覆電極對應的位置的調節板50均具有貫穿部51。與鍍覆電極對應的位置的調節板50（第一遮蔽部）是設於陽極固持器60、與和陽極固持器60對應的基板固持器11之間，具有形成於陽極62與方形基板S1之間的電力線能穿過的筒狀的貫穿部51。貫穿部51是以調整對應的陽極與對應的基板之間的電場的方式構成。調整例如可通過如下文將述那樣調整貫穿部51的開口面積而進行。調整方法不限於調整開口面積的方法。例如，能通過將貫穿部51的開口形狀改變為圓、橢圓、多邊形等而進行調整。FIG. 5 is an AA sectional view of the plating tank 39 shown in FIG. 4 . FIG. 4 is an AA sectional view of FIG. 5 . The paddle 45 is omitted in FIG. 5 . As shown in FIGS. 4 and 5 , the adjustment plate 50 at the position corresponding to the plating electrode and the adjustment plate 50 at the position corresponding to the non-plating electrode have penetration portions 51 . The regulating plate 50 (first shielding part) at the position corresponding to the plating electrode is provided between the anode holder 60 and the substrate holder 11 corresponding to the anode holder 60, and has a cylindrical penetration part 51 formed between the anode 62 and the square substrate S1 through which the electric force line can pass. The penetrating portion 51 is configured to adjust the electric field between the corresponding anode and the corresponding substrate. The adjustment can be performed, for example, by adjusting the opening area of the penetrating portion 51 as will be described later. The adjustment method is not limited to the method of adjusting the opening area. For example, it can be adjusted by changing the opening shape of the penetrating portion 51 to a circle, an ellipse, a polygon, or the like.

與非鍍覆電極對應的位置的調節板50（封閉部）是設於陽極固持器60、與和陽極固持器60對應的基板固持器11之間，具有形成於可保持的陽極與可保持的基板之間的電力線無法穿過的封閉部82。封閉部82含有具有筒狀的貫穿形狀的貫穿部51、及用於封閉貫穿部51的擋閘式的遮蔽板70（第三遮蔽部）。遮蔽板70分別配置在貫穿部51的基板固持器側與陽極固持器側。通過兩片遮蔽板70將貫穿部封閉。The adjustment plate 50 (closed part) at the position corresponding to the non-plating electrode is provided between the anode holder 60 and the substrate holder 11 corresponding to the anode holder 60, and has a closed part 82 formed between the holdable anode and the holdable substrate through which the electric force lines cannot pass. The closing portion 82 includes a penetrating portion 51 having a cylindrical penetrating shape, and a shutter-type shielding plate 70 (third shielding portion) for closing the penetrating portion 51 . The shielding plates 70 are respectively disposed on the substrate holder side and the anode holder side of the penetration portion 51 . The penetration is closed by two shielding plates 70 .

可對設於調節板50上的引導部72及引導部80裝卸遮蔽板70。即，可對調節板50裝卸遮蔽板70。圖5中，與非鍍覆電極對應的位置的遮蔽板70、和與鍍覆電極對應的位置的遮蔽板70在是否具有開口部的方面不同，看起來具有不同形狀。但是，也可使用相同形狀的遮蔽板70。下文中將包括此方面而對遮蔽板70的構造進行描述。The shielding plate 70 can be attached to and detached from the guide portion 72 and the guide portion 80 provided on the adjustment plate 50 . That is, the shielding plate 70 can be attached to and detached from the adjustment plate 50 . In FIG. 5 , the shielding plate 70 at the position corresponding to the non-plating electrode and the shielding plate 70 at the position corresponding to the plating electrode differ in whether or not they have openings, and they appear to have different shapes. However, a shielding plate 70 of the same shape may also be used. Hereinafter, the configuration of the shielding plate 70 will be described including this aspect.

封閉部82中，在陽極固持器60的前表面側（與方形基板S1相向的一側）設有遮蔽陽極62的遮蔽板74（第四遮蔽部）。通過設置遮蔽板74，形成於陽極62與虛設基板68之間的電力線無法穿過。進而，封閉部82中，在基板固持器11的前表面側（與陽極62相向的一側）設有遮蔽虛設基板68的遮蔽板76（第五遮蔽部）。通過設置遮蔽板76，形成於陽極62與方形基板S1之間的電力線無法穿過。可分別對設於陽極固持器60與基板固持器11上的引導部78裝卸遮蔽板74、遮蔽板76。即，可分別對陽極固持器60與基板固持器11裝卸遮蔽板74、遮蔽板76。In the sealing portion 82 , a shielding plate 74 (fourth shielding portion) for shielding the anode 62 is provided on the front surface side (the side facing the square substrate S1 ) of the anode holder 60 . By providing the shielding plate 74, the lines of electric force formed between the anode 62 and the dummy substrate 68 cannot pass through. Furthermore, in the sealing portion 82 , a shielding plate 76 (fifth shielding portion) for shielding the dummy substrate 68 is provided on the front surface side (the side facing the anode 62 ) of the substrate holder 11 . By providing the shielding plate 76, the lines of electric force formed between the anode 62 and the square substrate S1 cannot pass through. The shielding plate 74 and the shielding plate 76 can be attached to and detached from the guide portion 78 provided on the anode holder 60 and the substrate holder 11, respectively. That is, the shielding plate 74 and the shielding plate 76 can be attached to and detached from the anode holder 60 and the substrate holder 11 respectively.

引導部72、引導部80的厚度能任意變更。通過變更厚度，能調整調節板50的貫穿部51的長度B1。當變更引導部72、引導部80的厚度時，無需變更整個引導部72、引導部80的厚度，僅變更面向貫穿部51的部分的厚度即可。The thickness of the guide part 72 and the guide part 80 can be changed arbitrarily. By changing the thickness, the length B1 of the penetrating portion 51 of the adjustment plate 50 can be adjusted. When changing the thickness of the guide portion 72 and the guide portion 80 , it is not necessary to change the thickness of the entire guide portion 72 and the guide portion 80 , and only the thickness of the portion facing the penetration portion 51 may be changed.

鍍覆電極中，在陽極固持器60的前表面側（與方形基板S1相向的一側）設有遮蔽陽極62的一部分的陽極遮罩64。陽極遮罩64具有使陽極62與方形基板S1之間的電力線穿過的開口。可對引導部78裝卸陽極遮罩64。陽極遮罩64與遮蔽板74在是否具有開口部的方面不同，看起來具有不同形狀。但是，也能使用相同形狀的遮蔽板74。從此方面來說，遮蔽板74能具有與遮蔽板70類似的構造。In the plating electrode, an anode cover 64 that shields a part of the anode 62 is provided on the front surface side (the side facing the square substrate S1 ) of the anode holder 60 . The anode shield 64 has openings through which electric lines of electric force between the anode 62 and the square substrate S1 pass. The anode shield 64 can be attached to and detached from the guide portion 78 . The anode shield 64 differs from the shield plate 74 in whether or not it has an opening, and has a different shape in appearance. However, a shielding plate 74 of the same shape can also be used. In this respect, the shielding plate 74 can have a similar configuration as the shielding plate 70 .

鍍覆電極中，在基板固持器11的前表面側（與陽極62相向的一側）設有遮蔽板76。位於鍍覆電極的遮蔽板76與位於非鍍覆電極的遮蔽板76在是否具有開口部的方面不同，看起來具有不同形狀。但是，也能使用相同形狀的遮蔽板76。從此方面來說，遮蔽板76能具有與遮蔽板70類似的構造。In the plating electrode, a shielding plate 76 is provided on the front surface side (the side facing the anode 62 ) of the substrate holder 11 . The shielding plate 76 located on the plated electrode differs from the shielding plate 76 located on the non-plated electrode in whether or not it has an opening, and it appears to have a different shape. However, a shielding plate 76 of the same shape can also be used. In this respect, the shielding plate 76 can have a similar configuration as the shielding plate 70 .

接下來，通過圖6對設於基板固持器11上的引導部78進行說明。此外，陽極固持器60的引導部78、調節板50的引導部72也為相同構造。圖6為表示設於基板固持器11上的引導部78的正面圖。將供***擋閘式遮蔽板76的引導部78設置於基板固持器11的外表面。引導部78配置於方形基板S1左右。圖6中，為了逐一辨別引導部78，而對引導部78分別標注781～788的參照符號。本實施形態中，利用引導部781、引導部782、引導部783、引導部784來引導一片遮蔽板76，利用引導部785、引導部786、引導部787、引導部788來引導另一片遮蔽板76。即，擋閘式遮蔽板76是針對方形基板S1的各列而逐片***。在基板固持器11的外表面的最下部，設置用於防止遮蔽板76掉落的擋止部84。對一片遮蔽板76設置兩個擋止部84。Next, the guide portion 78 provided on the substrate holder 11 will be described with reference to FIG. 6 . In addition, the guide part 78 of the anode holder 60 and the guide part 72 of the adjustment plate 50 also have the same structure. FIG. 6 is a front view showing the guide portion 78 provided on the substrate holder 11 . A guide portion 78 into which the shutter-type shielding plate 76 is inserted is provided on the outer surface of the substrate holder 11 . The guide part 78 is arrange|positioned on the left and right of the square board|substrate S1. In FIG. 6 , reference signs 781 to 788 are attached to the guide portions 78 in order to identify the guide portions 78 one by one. In this embodiment, one shielding plate 76 is guided by guides 781 , 782 , 783 , and 784 , and the other shielding plate 76 is guided by guides 785 , 786 , 787 , and 788 . That is, the shutter-type shielding plates 76 are inserted one by one for each column of the square substrate S1. At the lowermost portion of the outer surface of the substrate holder 11, a stopper 84 for preventing the shield plate 76 from falling is provided. Two stoppers 84 are provided for one shield plate 76 .

圖7（a）及圖7（b）示出引導部78周邊的基板固持器11的詳細構造。圖7（a）表示鍍覆電極的基板固持器11的詳細構造，為圖5的B部的放大圖。圖7（b）表示非鍍覆電極的基板固持器11的詳細構造，為圖5的C部的放大圖。基板固持器11具有與方形基板S1的表面接觸的電接點86。當基板固持器11保持方形基板S1時，此電接點86是以沿著方形基板S1的相向兩邊或外周四邊而設置，且與圖3所示的接點位置CP1接觸的方式構成。7( a ) and 7 ( b ) show the detailed structure of the substrate holder 11 around the guide portion 78 . FIG. 7( a ) shows the detailed structure of the substrate holder 11 for plating electrodes, and is an enlarged view of part B in FIG. 5 . FIG. 7( b ) shows the detailed structure of the substrate holder 11 for the non-plating electrode, and is an enlarged view of part C in FIG. 5 . The substrate holder 11 has electrical contacts 86 in contact with the surface of the square substrate S1. When the substrate holder 11 holds the square substrate S1 , the electrical contacts 86 are arranged along two opposite sides or the outer four sides of the square substrate S1 and contact the contact position CP1 shown in FIG. 3 .

為了將電接點86及接點位置CP1從鍍覆液Q絕緣，將封條88設置在基板固持器11的堤部（bank part）90。堤部90安裝於基板固持器11上。利用封條88將電接點86及接點位置CP1密閉在基板固持器11的內部。在引導部78與堤部90之間設有***口98。***口98具有空間，在此空間中***遮蔽板76並保持遮蔽板76。In order to insulate the electrical contact 86 and the contact position CP1 from the plating solution Q, a seal 88 is provided on a bank part 90 of the substrate holder 11 . The bank 90 is mounted on the substrate holder 11 . The electrical contact 86 and the contact position CP1 are sealed inside the substrate holder 11 by the seal 88 . An insertion port 98 is provided between the guide portion 78 and the bank portion 90 . The insertion opening 98 has a space into which the shielding plate 76 is inserted and held.

此外，鍍覆電極中，控制對方形基板S1的電流的開關94接通（ON），非鍍覆電極中，控制對方形基板S1的電流的開關94斷開（OFF）。表示電流的流動方向的箭頭96表示電子的流動方向。In addition, the switch 94 for controlling the current to the square substrate S1 is turned on (ON) for the plated electrodes, and the switch 94 for controlling the current to the square substrate S1 is turned off (OFF) for the non-plating electrodes. Arrow 96 indicating the direction of flow of current indicates the direction of flow of electrons.

接下來，通過圖8（a）～8（c）對作為擋閘式遮蔽板的遮蔽板76（基板用）、遮蔽板74（陽極用）、遮蔽板70（調節板50用）的構造進行說明。圖8（a）～8（c）為遮蔽板的正面圖。關於形狀、開口的有無，遮蔽板76（基板用）、遮蔽板74（陽極用）、遮蔽板70（調節板50用）具有相同構造。圖8（a）為無開口的示例。例如為在圖6的列方向的位置102、位置104並未配置方形基板S1，且在位置102、位置104配置有虛設基板68時所用的遮蔽板76、遮蔽板74、遮蔽板70的形狀。Next, the structure of the shielding plate 76 (for the substrate), the shielding plate 74 (for the anode), and the shielding plate 70 (for the adjustment plate 50 ) which are shutter-type shielding plates will be described with reference to FIGS. 8( a ) to 8 ( c ). 8( a ) to 8 ( c ) are front views of the shielding plate. The shielding plate 76 (for the substrate), the shielding plate 74 (for the anode), and the shielding plate 70 (for the adjustment plate 50 ) have the same structure regarding the shape and presence or absence of openings. Figure 8(a) is an example without openings. For example, the shapes of the shielding plate 76, the shielding plate 74, and the shielding plate 70 used when the square substrate S1 is not disposed at positions 102 and 104 in the column direction of FIG.

圖8（b）為局部具有開口106的示例。為在圖6的位置102配置有方形基板S1，且在位置104配置有虛設基板68時所用的遮蔽板76、遮蔽板74、遮蔽板70的形狀。圖8（c）表示整個為開口106的示例。為在圖6的位置102、位置104未配置虛設基板68，且在位置102、位置104配置有方形基板S1時所用的遮蔽板76、遮蔽板74、遮蔽板70的形狀。FIG. 8( b ) is an example of partially having openings 106 . The shapes of the shielding plate 76 , the shielding plate 74 , and the shielding plate 70 are used when the square substrate S1 is arranged at the position 102 in FIG. 6 and the dummy substrate 68 is arranged at the position 104 . FIG. 8( c ) shows an example in which the entire opening 106 is formed. These are the shapes of shielding plate 76 , shielding plate 74 , and shielding plate 70 used when no dummy substrate 68 is disposed at positions 102 and 104 in FIG. 6 and square substrate S1 is disposed at positions 102 and 104 .

開口106的尺寸例如是如以下那樣設定。在配置於方形基板S1的前表面的遮蔽板76的情況下，開口106的尺寸為與方形基板S1相同的尺寸。在配置於陽極62的前表面的遮蔽板74的情況下，開口106的尺寸能任意設定，為與陽極遮罩的外徑相同的尺寸。在配置於貫穿部51兩側的遮蔽板70的情況下，開口106的尺寸能任意設定。例如，在方形基板S1側的遮蔽板70的情況下，開口106的尺寸依存於欲在方形基板S1上製作何種鍍覆厚度的分佈等。The size of the opening 106 is set as follows, for example. In the case of the shielding plate 76 disposed on the front surface of the square substrate S1, the size of the opening 106 is the same as that of the square substrate S1. In the case of the shield plate 74 disposed on the front surface of the anode 62, the size of the opening 106 can be set arbitrarily, and is the same size as the outer diameter of the anode shield. In the case of the shielding plates 70 arranged on both sides of the penetration portion 51, the size of the opening 106 can be set arbitrarily. For example, in the case of the shielding plate 70 on the side of the square substrate S1, the size of the opening 106 depends on the distribution of plating thickness to be produced on the square substrate S1 and the like.

接下來，通過圖9、圖10（a）～圖10（c）來表示能調整開口106的尺寸的實施例。對於遮蔽板76、遮蔽板74、遮蔽板70，均能應用能調整開口106的尺寸的實施例。以遮蔽板70為例進行說明。位於與鍍覆電極對應的位置的調節板50（第一遮蔽部）的遮蔽板70具有能在封閉部82形成開口106（開口部）的開口形成機構108。在封閉貫穿部時，利用開口形成機構108將開口106封閉。Next, an example in which the size of the opening 106 can be adjusted is shown with reference to FIGS. 9 , 10( a ) to 10 ( c ). For the shielding plate 76, the shielding plate 74, and the shielding plate 70, an embodiment in which the size of the opening 106 can be adjusted can be applied. The shielding plate 70 will be described as an example. The shielding plate 70 of the adjustment plate 50 (first shielding portion) located at a position corresponding to the plating electrode has an opening forming mechanism 108 capable of forming an opening 106 (opening portion) in the closing portion 82 . When closing the penetration portion, the opening 106 is closed by the opening forming mechanism 108 .

與非鍍覆電極對應的位置的調節板50（第二遮蔽部）具有遮蔽板70，此遮蔽板70具有調整貫穿部51的開口面積的調整機構，調整機構能封閉貫穿部51。在本實施形態中，開口形成機構108與調整機構為相同機構。圖9為開口形成機構108的正面圖，圖10（a）～圖10（c）為表示開口形成機構108的動作的圖。如圖9所示那樣，開口形成機構108具有在x軸方向上開閉的擋板112、及在y軸方向上開閉的擋板114。擋板112與擋板114能彼此獨立地開閉。圖9中，擋板114位於擋板112的後方。擋板112與擋板114為內置在遮蔽板70中的雙層打開擋板。The adjustment plate 50 (second shielding portion) at the position corresponding to the non-plating electrode has a shielding plate 70 with an adjustment mechanism for adjusting the opening area of the penetration portion 51 , and the adjustment mechanism can close the penetration portion 51 . In this embodiment, the opening forming mechanism 108 and the adjustment mechanism are the same mechanism. FIG. 9 is a front view of the opening forming mechanism 108 , and FIGS. 10( a ) to 10 ( c ) are views showing the operation of the opening forming mechanism 108 . As shown in FIG. 9 , the opening forming mechanism 108 has a shutter 112 that opens and closes in the x-axis direction, and a shutter 114 that opens and closes in the y-axis direction. The shutter 112 and the shutter 114 can be opened and closed independently of each other. In FIG. 9 , the baffle 114 is located behind the baffle 112 . The baffle 112 and the baffle 114 are double-layer opening baffles built in the shielding plate 70 .

如圖10（a）～圖10（c）所示那樣，開口形成機構108還具有用於開閉擋板112的操縱杆116、及用於開閉擋板114的操縱杆118。圖10（a）為開口形成機構108的正面圖，圖10（b）為圖10（a）的AA截面圖。圖10（c）為圖10（a）的BB截面圖。As shown in FIGS. 10( a ) to 10 ( c ), the opening forming mechanism 108 further includes a lever 116 for opening and closing the shutter 112 and a lever 118 for opening and closing the shutter 114 . FIG. 10( a ) is a front view of the opening forming mechanism 108 , and FIG. 10( b ) is an AA sectional view of FIG. 10( a ). Fig. 10(c) is a BB sectional view of Fig. 10(a).

操縱杆116可在x軸方向上移動，當操縱杆116位於x軸方向的下端時，擋板112全閉。當操縱杆116位於x軸方向的上端時，擋板112全開。操縱杆118可在y軸方向上移動，當操縱杆118位於y軸方向的左端時，擋板114全閉。當操縱杆118位於y軸方向的右端時，擋板114全開。雙層打開擋板的打開幅度通過移動操縱杆而可變，從而可調節開口尺寸。鍍覆裝置也可具有驅動操縱杆的操縱杆驅動機構。通過利用控制器175來控制操縱杆驅動機構，可自動調節開口尺寸。The joystick 116 is movable in the x-axis direction, and when the joystick 116 is located at the lower end in the x-axis direction, the shutter 112 is fully closed. When the joystick 116 is located at the upper end in the x-axis direction, the shutter 112 is fully opened. The joystick 118 is movable in the y-axis direction, and when the joystick 118 is located at the left end in the y-axis direction, the shutter 114 is fully closed. When the joystick 118 is located at the right end in the y-axis direction, the shutter 114 is fully opened. The opening range of the double-layer opening baffle can be changed by moving the joystick, so that the opening size can be adjusted. The coating device can also have a joystick drive for driving the joystick. By utilizing the controller 175 to control the joystick drive mechanism, the opening size can be automatically adjusted.

構成擋板112的上下兩片擋板能從全開狀態成為全閉狀態。上下兩片擋板沿著箭頭122的方向朝向開口106的中心126、或沿著與箭頭122相反的方向以相同的移動量移動。同樣地，構成擋板114的左右兩片擋板能從全開狀態成為全閉狀態。左右兩片擋板沿著箭頭124的方向朝向開口106的中心126、或沿著與箭頭124相反的方向以相同的移動量移動。此外，也可設定為以不同的量移動。The upper and lower shutters constituting the shutter 112 can be changed from a fully open state to a fully closed state. The upper and lower baffles move toward the center 126 of the opening 106 along the direction of the arrow 122 , or along the direction opposite to the arrow 122 by the same amount of movement. Similarly, the left and right shutters constituting the shutter 114 can be changed from the fully open state to the fully closed state. The left and right baffles move toward the center 126 of the opening 106 in the direction of the arrow 124 , or in the direction opposite to the arrow 124 by the same amount of movement. In addition, it can also be set to move by a different amount.

此外，貫穿部51的長度存在優選長度。以下將對此方面進行說明。如圖5所示那樣，方形基板S1以距離D1與陽極62彼此相向地配置。即，鍍覆槽39具有極間距離D1。調節板50的貫穿部51具有長度B1。調節板50的貫穿部51的一端面以距離A1遠離方形基板S1。如圖5所示那樣，基板固持器11的電接點16與方形基板S1的以距離L1遠離中心的部位接觸。在鍍覆槽39中對方形基板S1進行鍍覆時，極間距離D1影響形成於方形基板S1上的膜厚的均勻性。同樣地，貫穿部51與方形基板S1的適當距離A1、及貫穿部51的長度B1也影響形成於方形基板S1上的膜厚的均勻性。在如圖5所示那樣對方形基板S1的相向兩邊供電的情況下，從方形基板S1的中心到電接點16的距離L1和適當的極間距離D1之間存在優選的關係性。同樣地，從方形基板S1的中心到電接點16的距離L1和貫穿部51與方形基板S1的適當距離A1之間、及從方形基板S1的中心到電接點16的距離L1和貫穿部51的長度B1之間存在優選的關係性。In addition, the length of the penetrating portion 51 has a preferable length. This aspect will be described below. As shown in FIG. 5 , the square substrate S1 and the anode 62 are arranged to face each other at a distance D1 . That is, the plating tank 39 has an inter-electrode distance D1. The penetrating portion 51 of the adjustment plate 50 has a length B1. One end surface of the through portion 51 of the adjustment plate 50 is away from the square substrate S1 by a distance A1. As shown in FIG. 5 , the electrical contact 16 of the substrate holder 11 is in contact with a portion of the square substrate S1 away from the center by a distance L1 . When the square substrate S1 is plated in the plating tank 39 , the inter-electrode distance D1 affects the uniformity of the film thickness formed on the square substrate S1 . Similarly, the appropriate distance A1 between the penetrating portion 51 and the square substrate S1 and the length B1 of the penetrating portion 51 also affect the uniformity of the film thickness formed on the square substrate S1 . In the case of supplying power to opposite sides of the square substrate S1 as shown in FIG. 5 , there is a preferable relationship between the distance L1 from the center of the square substrate S1 to the electrical contact 16 and the appropriate inter-electrode distance D1. Similarly, there is a preferred relationship between the distance L1 from the center of the square substrate S1 to the electrical contact 16 and the appropriate distance A1 between the through portion 51 and the square substrate S1, and the distance L1 from the center of the square substrate S1 to the electrical contact 16 and the length B1 of the through portion 51.

在將方形基板的基板中心與電接點之間的距離設為L1，將方形基板與陽極之間的距離設為D1的情況下，優選以滿足 0.59×L1－43.5 mm≦D1≦0.58×L1－19.8 mm 的關係的方式將方形基板及陽極配置在所述鍍覆槽內。在將貫穿部的長度設為B1的情況下，貫穿部優選具有滿足 B1＝0.33×L1－43.3 mm 的關係那樣的長度。在將鍍覆裝置中收納的方形基板的表面與貫穿部的距離設為A1時，優選滿足A1＝20.8 mm的關係。When the distance between the center of the substrate and the electrical contact of the square substrate is L1, and the distance between the square substrate and the anode is D1, it is preferable to arrange the square substrate and the anode in the coating tank so as to satisfy the relationship of 0.59×L1-43.5 mm≦D1≦0.58×L1-19.8 mm. When the length of the penetrating portion is B1, the penetrating portion preferably has a length satisfying the relationship of B1=0.33×L1−43.3 mm. When the distance between the surface of the square substrate housed in the plating apparatus and the penetration portion is A1, it is preferable to satisfy the relationship of A1=20.8 mm.

接下來，對本發明的另一實施形態進行說明。本實施形態的鍍覆裝置中，非鍍覆電極的調節板50不具有圖5所示的遮蔽板70。進而，非鍍覆電極處，不使用遮蔽板74、遮蔽板76。圖5中，能使用這些遮蔽板70、遮蔽板74、遮蔽板76彼此獨立地控制鍍覆電極與非鍍覆電極處的鍍覆液的濃度分佈。也能使用遮蔽板70、遮蔽板74、遮蔽板76彼此獨立地控制鍍覆電極與其他鍍覆電極處的鍍覆液的濃度分佈。Next, another embodiment of the present invention will be described. In the plating apparatus of this embodiment, the adjustment plate 50 of the non-plating electrode does not have the shielding plate 70 shown in FIG. 5 . Furthermore, the shielding plate 74 and the shielding plate 76 are not used for the non-plating electrode. In FIG. 5 , the concentration distribution of the plating solution at the plating electrode and the non-plating electrode can be controlled independently of each other using these shielding plates 70 , 74 , and 76 . The concentration distribution of the plating solution at the plating electrode and other plating electrodes can also be controlled independently of each other using the shielding plate 70 , the shielding plate 74 , and the shielding plate 76 .

本發明的另一實施形態中，如下文將述那樣，將鍍覆電極與非鍍覆電極處的鍍覆液的存在空間彼此分離。另外，將鍍覆電極與其他鍍覆電極處的鍍覆液的存在空間彼此分離。通過將空間彼此分離，能彼此獨立地控制鍍覆電極與非鍍覆電極處的鍍覆液的濃度分佈。同樣地，也能彼此獨立地控制鍍覆電極與其他鍍覆電極處的鍍覆液的濃度分佈。In another embodiment of the present invention, as will be described later, the space where the plating solution exists at the plating electrode and the non-plating electrode is separated from each other. In addition, the plating electrode and the space in which the plating liquid exists at the other plating electrodes are separated from each other. By separating the spaces from each other, the concentration distribution of the plating solution at the plated electrodes and the non-plated electrodes can be controlled independently of each other. Likewise, the concentration distribution of the plating solution at the plating electrode and the other plating electrodes can also be controlled independently of each other.

通過圖11～圖15對另一實施形態進行說明。圖11為表示圖1所示的處理部120B的鍍覆槽39及溢流槽38的概略縱截正面圖。關於基板固持器11，以各自保持一個基板的方式構成的四個基板固持器11成一體而構成一個基板固持器11。與此對應，關於陽極固持器60，以各自保持一個陽極62的方式構成的四個陽極固持器60成一體而構成一個陽極固持器60。多個陽極62與多個基板S1以一對一而對應，多個陽極62各自與對應的一個基板S1相向地配置。Another embodiment will be described with reference to FIGS. 11 to 15 . FIG. 11 is a schematic longitudinal sectional front view showing the plating tank 39 and the overflow tank 38 of the processing unit 120B shown in FIG. 1 . Regarding the substrate holder 11 , four substrate holders 11 each configured to hold one substrate are integrated to constitute one substrate holder 11 . Correspondingly, regarding the anode holder 60 , four anode holders 60 each configured to hold one anode 62 are integrated to constitute one anode holder 60 . The plurality of anodes 62 are in one-to-one correspondence with the plurality of substrates S1 , and each of the plurality of anodes 62 is arranged to face a corresponding one of the substrates S1 .

關於調節板50，針對四個陽極固持器各自設置一個的四個調節板50（遮蔽部）成一體而構成一個調節板50。遮蔽部各自設於對應的陽極固持器60與基板固持器11之間，具有形成於陽極62與基板S1之間的電力線能穿過的筒狀的貫穿部51。圖11中，貫穿部51總共設有四個。Regarding the adjustment plate 50 , four adjustment plates 50 (shielding portions) provided one for each of the four anode holders are integrated to constitute one adjustment plate 50 . Each of the shielding parts is provided between the corresponding anode holder 60 and the substrate holder 11 , and has a cylindrical penetration part 51 formed between the anode 62 and the substrate S1 through which the electric force line can pass. In FIG. 11 , four penetration portions 51 are provided in total.

調節板50也可如圖11所示那樣，設為使基板固持器11側的構件130與陽極固持器60側的構件132成一體的構成。遍及與基板固持器11相向的槽39的整個面，構件130與基板固持器11相向。即，當從基板固持器11側觀察構件130時，構件130的左端、右端、底部與槽39的左端、右端、底部接觸。另一方面，構件132僅具有覆蓋貫穿空間51所需要的厚度。即，構件132的左端、右端、底部不與槽39的左端、右端、底部接觸。As shown in FIG. 11 , the adjustment plate 50 may have a structure in which a member 130 on the substrate holder 11 side and a member 132 on the anode holder 60 side are integrated. The member 130 faces the substrate holder 11 over the entire surface of the groove 39 facing the substrate holder 11 . That is, when the member 130 is viewed from the substrate holder 11 side, the left end, right end, and bottom of the member 130 are in contact with the left end, right end, and bottom of the groove 39 . On the other hand, the member 132 has only the thickness necessary to cover the penetrating space 51 . That is, the left end, the right end, and the bottom of the member 132 are not in contact with the left end, the right end, and the bottom of the groove 39 .

形成各貫穿部51的遮蔽部的壁部128的陽極固持器側是在對應的陽極62的外周附近配置於陽極固持器60上。由四個貫穿部51各自所形成的四個貫穿空間51彼此分別獨立。也可將圖5所示的遮蔽板70設於調節板50的基板固持器11側。另外，也可將圖5所示的遮蔽板74設於調節板50的陽極固持器60側。遮蔽板70、遮蔽板74能設為圖8（a）～圖8（c）、圖9及圖10（a）～圖10（c）所示那樣的遮蔽板。The anode holder side of the wall portion 128 forming the shielding portion of each penetrating portion 51 is disposed on the anode holder 60 near the outer periphery of the corresponding anode 62 . The four penetration spaces 51 formed by each of the four penetration portions 51 are independent from each other. The shielding plate 70 shown in FIG. 5 may also be provided on the substrate holder 11 side of the adjustment plate 50 . In addition, the shielding plate 74 shown in FIG. 5 may be provided on the anode holder 60 side of the adjustment plate 50 . The shielding plate 70 and the shielding plate 74 can be set as a shielding plate as shown in FIG.8(a) - FIG.8(c), FIG.9, and FIG.10(a) - FIG.10(c).

圖12為圖11所示的鍍覆槽39的AA截面圖。圖11為圖12的AA截面圖。多片方形基板S1位於鍍覆槽39內。陽極62也作為電極對而為相同片數，方形基板S1與陽極62是配置在相向的位置。FIG. 12 is an AA sectional view of the plating tank 39 shown in FIG. 11 . FIG. 11 is an AA sectional view of FIG. 12 . A plurality of square substrates S1 are located in the plating tank 39 . The number of anodes 62 is the same as electrode pairs, and the rectangular substrate S1 and the anodes 62 are arranged at opposing positions.

接下來，通過圖13（a）及圖13（b）對用於對圖11的鍍覆槽39供給鍍覆液Q的構造進行說明。圖13（a）為設有用於供給鍍覆液Q的構造的與圖11對應的圖。圖13（b）為圖13（a）的A部的放大圖。如圖13（a）所示，為了對鍍覆槽39內供給鍍覆液Q及使其迴圈，在鍍覆槽39的底部設置有管線138。鍍覆液Q如箭頭140那樣從底部流入。當對鍍覆槽39內供給鍍覆液Q及使其迴圈時，有時空氣134積存在構件132的上部。壁部128具有第一貫穿孔136，此第一貫穿孔136用於將作為貫穿部51內的氣體的例如空氣134從貫穿部51中去除。也可在第一貫穿孔136中設置自動閥142。而且，為了防止電場洩漏，也可在供給鍍覆液Q後（即鍍覆過程中）關閉自動閥142。Next, the structure for supplying the plating liquid Q to the plating tank 39 of FIG. 11 is demonstrated using FIG.13(a) and FIG.13(b). FIG. 13( a ) is a diagram corresponding to FIG. 11 provided with a structure for supplying the plating solution Q. FIG. FIG. 13( b ) is an enlarged view of part A of FIG. 13( a ). As shown in FIG. 13( a ), a pipeline 138 is provided at the bottom of the plating tank 39 in order to supply and circulate the plating solution Q in the plating tank 39 . The plating solution Q flows in from the bottom as indicated by arrow 140 . When the plating liquid Q is supplied and circulated in the plating tank 39 , air 134 may accumulate in the upper portion of the member 132 . The wall portion 128 has a first through hole 136 for removing, for example, air 134 , which is gas inside the penetrating portion 51 , from the penetrating portion 51 . An automatic valve 142 may also be provided in the first through hole 136 . Furthermore, in order to prevent leakage of the electric field, the automatic valve 142 may be closed after the plating solution Q is supplied (ie, during the plating process).

接下來，通過圖14對用於對圖12的鍍覆槽39供給鍍覆液的添加劑的構造進行說明。圖14為設有用於供給添加劑的構造的與圖12對應的圖。如圖14所示那樣，在鍍覆槽39的側面及貫穿部51的壁部128中，設置有用於供給添加劑的管線144。添加劑如箭頭140那樣從側面流入。壁部128具有用於將鍍覆液的添加劑供給於貫穿部51內的第二貫穿孔148。Next, the structure of additives for supplying the plating solution to the plating tank 39 of FIG. 12 will be described with reference to FIG. 14 . Fig. 14 is a view corresponding to Fig. 12 provided with a configuration for supplying additives. As shown in FIG. 14 , a line 144 for supplying additives is provided on the side surface of the coating tank 39 and the wall portion 128 of the penetrating portion 51 . The additive flows in from the side as indicated by arrow 140 . The wall portion 128 has a second through hole 148 for supplying the additive of the plating solution into the through portion 51 .

添加劑的供給是在調整鍍覆液中的添加劑濃度時進行。由此，能防止鍍覆槽內的添加劑濃度不均。此外，鍍覆電極附近的添加劑的濃度均勻化可通過使用設於方形基板S1附近的槳45來攪拌添加劑而進行。圖14中，槳45如箭頭150那樣在左右方向上往返運動。在第二貫穿孔148中設置自動閥152。而且，為了防止電場洩漏，在供給添加劑後（即迴圈時）關閉自動閥152。The supply of the additive is performed when adjusting the concentration of the additive in the plating solution. Thereby, it is possible to prevent the uneven concentration of the additive in the plating tank. In addition, uniformization of the concentration of the additive near the plating electrode can be performed by stirring the additive using the paddle 45 provided near the square substrate S1. In FIG. 14 , the paddle 45 reciprocates in the left-right direction as indicated by the arrow 150 . An automatic valve 152 is provided in the second through hole 148 . Also, in order to prevent leakage of the electric field, the automatic valve 152 is closed after the additive is supplied (that is, at the time of looping).

鍍覆裝置100具有調整鍍覆液Q及添加劑的供給量的供給量調整機構154。通過圖15對供給量調整機構154進行說明。圖15為表示供給量調整機構154的構成的方塊圖。供給量調整機構154具有鍍覆液供給單元164、連接於鍍覆槽39的管線138和管線144、以及對管線138和管線144供給鍍覆液Q及添加劑的帶閥的泵162。The plating apparatus 100 has a supply amount adjustment mechanism 154 that adjusts the supply amount of the plating solution Q and additives. The supply amount adjustment mechanism 154 will be described with reference to FIG. 15 . FIG. 15 is a block diagram showing the configuration of the supply amount adjustment mechanism 154 . The supply amount adjustment mechanism 154 has a plating solution supply unit 164 , a line 138 and a line 144 connected to the plating tank 39 , and a valved pump 162 for supplying the plating solution Q and additives to the line 138 and the line 144 .

液供給單元164具有收納有未加入添加劑的鍍覆液Q、例如硫酸銅液（基本液（Virgin Make-up Solution，VMS））的VMS儲槽156以及收納有例如三種添加劑的三個儲槽158。從收納有未加入添加劑的鍍覆液Q的公用設備（utility）160對儲槽156供給鍍覆液Q。公用設備160設於供給量調整機構154的外部。公用設備160與儲槽156通過帶閥的泵162而連接。The liquid supply unit 164 has a VMS storage tank 156 containing a plating solution Q without additives, such as a copper sulfate solution (Virgin Make-up Solution (VMS)), and three storage tanks 158 containing, for example, three kinds of additives. The plating solution Q is supplied to the storage tank 156 from a utility 160 storing the plating solution Q without additives. The common device 160 is provided outside the supply amount adjustment mechanism 154 . A utility 160 is connected to the storage tank 156 by a valved pump 162 .

來自儲槽156和儲槽158的鍍覆液Q及添加劑被供給於儲槽166並混合。利用泵162，從儲槽166經由管線138向鍍覆槽39的底部供給經混合的鍍覆液Q。在鍍覆時，利用泵162從鍍覆槽39的側面經由管線144將添加劑供給於鍍覆槽39。泵162也可利用控制器175自動控制。The plating solution Q and additives from the storage tank 156 and the storage tank 158 are supplied to the storage tank 166 and mixed. The mixed plating liquid Q is supplied from the storage tank 166 to the bottom of the plating tank 39 via the line 138 by the pump 162 . During plating, the additive is supplied to the plating tank 39 from the side of the plating tank 39 via the line 144 by the pump 162 . Pump 162 may also be automatically controlled using controller 175 .

接下來，通過圖16對鍍覆電路的構成進行說明。圖16為表示鍍覆電路的構成的說明圖。能從自第一直流電源分支的多根第一配線分別獨立地將第一電流供給於多個基板各自，以及/或者能從自第二直流電源分支的多根第二配線分別獨立地將第二電流供給於多個陽極各自。進而，流經多根第一配線各自的第一電流可分別獨立地控制，以及/或者流經多根第二配線各自的第二電流可分別獨立地控制。Next, the configuration of the plating circuit will be described with reference to FIG. 16 . FIG. 16 is an explanatory diagram showing the configuration of a plating circuit. The first current can be independently supplied to each of the plurality of substrates from the plurality of first wirings branched from the first DC power supply, and/or the second current can be independently supplied to each of the plurality of anodes from the plurality of second wirings branched from the second DC power supply. Furthermore, the respective first currents flowing through the plurality of first wirings can be independently controlled, and/or the respective second currents flowing through the plurality of second wirings can be independently controlled.

圖16中，從自第一直流電源168經由整流器170而分支的多根第一配線172，分別獨立地將第一電流供給於多個基板S1各自。這一情況也示於圖5等中。如圖5等所示那樣，能從自第一直流電源168分支的多根第二配線174將第二電流分別獨立地供給於多個陽極62各自。In FIG. 16 , the first current is independently supplied to each of the plurality of substrates S1 from the plurality of first wirings 172 branched from the first DC power supply 168 via the rectifier 170 . This situation is also shown in FIG. 5 and the like. As shown in FIG. 5 and the like, the second current can be independently supplied to each of the plurality of anodes 62 from the plurality of second wirings 174 branched from the first DC power supply 168 .

進而，如圖16所示那樣，流經多根第一配線172各自的第一電流可通過開關176而分別獨立地控制。流經多根第二配線174各自的第二電流可通過開關178而分別獨立地控制。圖16中，將三片方形基板S1和一片虛設基板68配置在基板固持器11上。與三片方形基板S1對應的開關176為接通（ON）。與一片虛設基板68對應的開關176為斷開（OFF）。圖16中，以CH1、CH3、CH4表示與三片方形基板S1對應的配線。以CH2表示與一片虛設基板68對應的配線。Furthermore, as shown in FIG. 16 , the first currents flowing through the plurality of first wirings 172 can be independently controlled by the switches 176 . The second currents flowing through the plurality of second wires 174 can be independently controlled by the switches 178 . In FIG. 16 , three square substrates S1 and one dummy substrate 68 are placed on the substrate holder 11 . The switches 176 corresponding to the three square substrates S1 are turned on (ON). The switch 176 corresponding to one dummy substrate 68 is turned off (OFF). In FIG. 16 , wirings corresponding to the three square substrates S1 are represented by CH1, CH3, and CH4. Wiring corresponding to one dummy substrate 68 is represented by CH2.

開關176可通過程式控制而進行接通/斷開（ON/OFF）。通過程式控制，虛設基板68與其成對的陽極62的電流電路成為斷開（OFF）。圖16中，作為示例而對基板1、基板3、基板4實施鍍覆，且不對虛設基板68實施鍍覆。此時，CH1為接通（ON），CH2為斷開（OFF），CH3為接通（ON），CH4為接通（ON）。圖16中，並未圖示與CH3、CH4有關的基板固持器11上的電路。The switch 176 can be turned on/off (ON/OFF) by program control. By program control, the current circuit between the dummy substrate 68 and the paired anode 62 is disconnected (OFF). In FIG. 16 , as an example, the substrate 1 , the substrate 3 , and the substrate 4 are plated, and the dummy substrate 68 is not plated. At this time, CH1 is connected (ON), CH2 is disconnected (OFF), CH3 is connected (ON), and CH4 is connected (ON). In FIG. 16 , the circuit on the substrate holder 11 related to CH3 and CH4 is not shown.

基板固持器11針對各方形基板S1而在左右具有供電部。關於陽極固持器，如圖5等所示那樣，僅對陽極的中心進行供電。方形基板S1及陽極周邊的配線、連接能任意使用。The substrate holder 11 has power supply portions on the left and right for each square substrate S1. Regarding the anode holder, as shown in FIG. 5 and the like, power is supplied only to the center of the anode. The wiring and connection around the square substrate S1 and the anode can be used arbitrarily.

關於圖4～圖6的鍍覆裝置100，針對進行四片方形基板S1的同時鍍覆的示例（圖17）、僅進行三片方形基板S1的鍍覆的示例（圖18）確認鍍覆膜厚的均勻性。結果能確認，在四片鍍覆時（圖17）與三片鍍覆時（圖18），膜厚的均勻性基本相同。圖18中，在虛設基板68與其成對的陽極62之間電流為斷開（OFF）。另外，長度180為進行了鍍覆的區域的長度。長度182為方形基板S1的長度。Regarding the plating apparatus 100 of FIGS. 4 to 6 , the uniformity of the plated film thickness was confirmed for an example of performing simultaneous plating of four square substrates S1 ( FIG. 17 ) and an example of performing plating of only three square substrates S1 ( FIG. 18 ). As a result, it was confirmed that the uniformity of the film thickness was substantially the same in the case of four-sheet plating ( FIG. 17 ) and the three-sheet plating ( FIG. 18 ). In FIG. 18 , the current is off (OFF) between the dummy substrate 68 and its paired anodes 62 . In addition, the length 180 is the length of the plated region. The length 182 is the length of the square substrate S1.

進而，關於圖18，對如下情況確認鍍覆膜厚的均勻性，即，（1）將對虛設基板68供電的開關176及對其成對的陽極62供電的開關178設為斷開（OFF）的情況、及（2）將對虛設基板68供電的開關176設為斷開（OFF）且將對與其成對的陽極62供電的開關178設為接通（ON）的情況。結果，（1）的情況下，三片方形基板S1的膜厚的均勻性良好，但（2）的情況下，三片方形基板S1的膜厚的均勻性明顯降低。因此，關於虛設基板68，優選不進行對虛設基板68的供電及對陽極62的供電。Furthermore, referring to FIG. 18 , the uniformity of the plated film thickness was confirmed for the case where (1) the switch 176 for supplying power to the dummy substrate 68 and the switch 178 for supplying power to the anode 62 paired with it were turned off (OFF), and (2) the switch 176 for supplying power to the dummy substrate 68 was turned off (OFF) and the switch 178 for supplying power to the anode 62 paired with it was turned on (ON). As a result, in the case of (1), the uniformity of the film thickness of the three square substrates S1 was good, but in the case of (2), the uniformity of the film thickness of the three square substrates S1 was significantly lowered. Therefore, regarding the dummy substrate 68 , it is preferable not to supply power to the dummy substrate 68 and to anode 62 .

根據本發明的實施形態的示例，能在單一電解槽內對多個方形基板S1同時進行鍍覆。即便同時進行鍍覆的方形基板S1的片數變化，也能在作為處理物件的所有方形基板S1上獲得物理性質、化學性質均一的金屬膜。According to an example of an embodiment of the present invention, a plurality of square substrates S1 can be simultaneously plated in a single electrolytic tank. Even if the number of square substrates S1 to be plated at the same time varies, a metal film with uniform physical and chemical properties can be obtained on all the square substrates S1 to be processed.

通過如圖9、圖10（a）～圖10（c）所示那樣調整開口106的尺寸，可實現以下情況。若使陽極遮罩64的開口幅度變窄，則膜厚從方形基板S1的中央部朝向周邊部變薄。即，成為以中央部為山頂的山形的膜厚分佈。若使陽極遮罩64的開口幅度變寬，則膜厚從方形基板S1的中央部朝向周邊部變厚。即，成為以中央部為谷底的穀形的膜厚分佈。By adjusting the size of the opening 106 as shown in FIGS. 9 and 10( a ) to 10 ( c ), the following conditions can be realized. When the opening width of the anode shield 64 is narrowed, the film thickness becomes thinner from the central portion toward the peripheral portion of the square substrate S1. That is, it becomes a mountain-shaped film thickness distribution with the center part as a peak. When the opening width of the anode shield 64 is widened, the film thickness increases from the central portion of the square substrate S1 toward the peripheral portion. That is, it becomes a valley-shaped film thickness distribution with the center part as the valley bottom.

若使遮蔽板70的開口幅度變窄，則膜厚僅在方形基板S1的端部局部地薄於其他部分。若使遮蔽板70的開口幅度變寬，則膜厚僅於方形基板S1的端部局部地厚於其他部分。因此，能對單一的方形基板S1上的各區域分別控制膜厚分佈。通過膜厚在基板內變化，能利用所得的金屬膜控制方形基板S1自身的應力。這一情況對於圓形等的基板來說也可實現。If the opening width of the shielding plate 70 is narrowed, the film thickness becomes locally thinner only at the end portion of the square substrate S1 than in other portions. If the opening width of the shielding plate 70 is widened, the film thickness is locally thicker only at the end portion of the square substrate S1 than in other portions. Therefore, the film thickness distribution can be individually controlled for each region on the single square substrate S1. By varying the film thickness within the substrate, the resulting metal film can be used to control the stress of the square substrate S1 itself. This is also true for circular substrates and the like.

實施形態中，對在單面上進行鍍覆的示例進行了說明，但也可在兩面上鍍覆。接點位置CP1是設定為位於方形基板S1的左右兩邊，但也能在方形基板S1的一邊至四邊之間設置接點位置CP1。In the embodiment, an example of plating on one side was described, but plating on both sides is also possible. The contact position CP1 is set to be located on the left and right sides of the square substrate S1, but the contact position CP1 can also be provided between one side to four sides of the square substrate S1.

實施形態中，被鍍覆的基板的表面可包含選自Co、Ru、Ti、Cr、Cu及這些金屬的任意組合中的材料。鍍覆在這些金屬上的金屬不僅為銅、SnAg合金、Au，而且可包含選自Co、Ni、Ru、Sn、In、Pd、Ge及這些金屬的任意組合中的材料。In an embodiment, the surface of the substrate to be plated may comprise a material selected from Co, Ru, Ti, Cr, Cu, and any combination of these metals. The metals plated on these metals are not only copper, SnAg alloy, and Au, but may also include materials selected from Co, Ni, Ru, Sn, In, Pd, Ge, and arbitrary combinations of these metals.

如圖1所示那樣，鍍覆裝置具有以控制上述各部的方式構成的控制器175。控制器175具有存儲有規定程式的記憶體175B、執行記憶體175B的程式的中央處理器（Central Processing Unit，CPU）175A、及通過CPU 175A執行程式而實現的控制部175C。控制部175C例如能進行以下控制：基板搬送裝置27的搬送控制，基板裝卸機構29的對基板固持器裝卸基板的控制，基板固持器搬送裝置37的搬送控制，各鍍覆槽39中的鍍覆電流及鍍覆時間的控制，以及配置在各鍍覆槽39內的遮蔽板70、遮蔽板74、遮蔽板76的開口尺寸的控制等。另外，控制器175也能以可與統一控制鍍覆裝置及其他相關裝置的未圖示的上級控制器通信的方式構成，且與上級控制器所具有的資料庫進行資料交換。As shown in FIG. 1, the plating apparatus has the controller 175 comprised so that the said each part may be controlled. The controller 175 has a memory 175B storing a predetermined program, a central processing unit (Central Processing Unit, CPU) 175A that executes the program in the memory 175B, and a control unit 175C realized by the CPU 175A executing the program. The control unit 175C can perform the following controls, for example: transport control of the substrate transport device 27, control of substrate loading and unloading by the substrate loading and unloading mechanism 29 to the substrate holder, transport control of the substrate holder transport device 37, control of the plating current and plating time in each plating tank 39, and control of the opening size of the shielding plate 70, shielding plate 74, and shielding plate 76 arranged in each plating tank 39. In addition, the controller 175 can also be configured so as to be able to communicate with an unillustrated upper-level controller that collectively controls the plating device and other related devices, and can exchange data with a database included in the upper-level controller.

記憶體175B的程式中，記錄有用於使電腦（CPU 175A）作為控制多個第一電流及/或多個第二電流的接通/斷開（ON/OFF）的控制機構而發揮功能的程式，所述電腦用於控制鍍覆裝置。此程式是記錄在非暫時性電腦可讀存儲介質、例如磁記錄介質、快閃記憶體等中。此處，構成記憶體175B的存儲介質存儲有各種設定資料或下文將述的鍍覆處理常式等各種程式。關於存儲介質，能使用可利用電腦讀取的唯讀記憶體（Read Only Memory，ROM）或隨機存取記憶體（Random Access Memory，RAM）等記憶體，或硬碟、光碟唯讀記憶體（Compact Disc Read Only Memory，CD-ROM）、數位多功能光碟唯讀記憶體（Digital Video Disc-Read Only Memory，DVD-ROM）或軟碟（flexible disk）等盤狀存儲介質等眾所周知的存儲介質。In the program of the memory 175B, a program for causing a computer (CPU 175A) to function as a control means for controlling ON/OFF of a plurality of first currents and/or a plurality of second currents is recorded. The computer controls the plating device. This program is recorded in a non-transitory computer-readable storage medium, such as a magnetic recording medium, flash memory, etc. Here, the storage medium constituting the memory 175B stores various setting data and various programs such as plating processing routines described below. As the storage medium, memory such as read-only memory (Read Only Memory, ROM) or random access memory (Random Access Memory, RAM) that can be read by a computer, or a disk such as a hard disk, compact disc read-only memory (CD-ROM), digital video disc-read only memory (DVD-ROM), or floppy disk (flexible disk) can be used. Well-known storage media such as storage media.

本發明也能應用於在杯型的鍍覆槽內連續供給鍍覆液並使鍍覆液與晶片接觸的杯式鍍覆裝置。通過圖19、圖20對此實施形態進行說明。圖19為從陽極側觀察經基板固持器184保持的方形基板S1及虛設基板68的圖。圖20表示配置在基板固持器184與陽極之間的調節板50。在杯型的鍍覆槽中，基板固持器184例如為可保持四片基板的構成。可對四片基板各自獨立地供電。與四片基板各自相向的鍍覆槽的四個區域是被調節板50分割並劃分。調節板50具有貫穿部51，位於與虛設基板68相向的位置的貫穿部51被遮蔽板70封閉。The present invention can also be applied to a cup-type plating apparatus that continuously supplies a plating solution in a cup-shaped plating tank and brings the plating solution into contact with wafers. This embodiment will be described with reference to FIGS. 19 and 20 . FIG. 19 is a view of the square substrate S1 held by the substrate holder 184 and the dummy substrate 68 viewed from the anode side. FIG. 20 shows the conditioning plate 50 disposed between the substrate holder 184 and the anode. In a cup-shaped plating tank, the substrate holder 184 is configured to hold, for example, four substrates. The four boards can be powered independently. The four areas of the plating tank facing each of the four substrates are divided and divided by the regulating plate 50 . The adjustment plate 50 has a penetrating portion 51 , and the penetrating portion 51 located at a position facing the dummy substrate 68 is closed by the shielding plate 70 .

根據本發明的已述實施形態，能提供實現、達成設想今後將需求的已述高鍍覆品質的至少一部分，並且進而對多個基板進行鍍覆的鍍覆裝置。另外，能提供在單一電解槽內對多個基板同時進行鍍覆，即便在同時進行處理的處理片數變化的情況下，也對需鍍覆的所有基板施加物理性質（膜厚等）、化學性質均一的金屬膜的鍍覆裝置。另外，能提供在單一電解槽內對多個基板同時進行鍍覆，且可對各基板分別獨立地控制膜厚分佈的鍍覆裝置。According to the above-described embodiments of the present invention, it is possible to provide a plating apparatus that realizes and achieves at least a part of the above-mentioned high plating quality expected to be required in the future, and further coats a plurality of substrates. In addition, it is possible to provide a plating device that simultaneously coats multiple substrates in a single electrolytic tank, and applies a metal film with uniform physical properties (film thickness, etc.) and chemical properties to all substrates to be plated even when the number of sheets to be processed at the same time changes. In addition, it is possible to provide a plating apparatus that can simultaneously plate a plurality of substrates in a single electrolytic tank, and can independently control the film thickness distribution for each substrate.

以上，對本發明的實施形態的示例進行了說明，但所述發明的實施形態是以容易理解本發明為目的，並未限定本發明。本發明當然能在不偏離其主旨的情況下進行變更、改良，並且其均等物包括在本發明內。另外，在能解決上述課題的至少一部分的範圍、或發揮至少一部分效果的範圍內，可將申請專利範圍及說明書中記載的各構成要素任意組合或省略。As mentioned above, although the example of embodiment of this invention was demonstrated, the said embodiment of the invention aims at making understanding of this invention easy, and does not limit this invention. Of course, the present invention can be changed and improved without departing from the gist thereof, and equivalents thereof are included in the present invention. In addition, each constituent element described in the claims and the specification can be arbitrarily combined or omitted as long as at least a part of the above-mentioned problems can be solved or at least a part of the effect can be exhibited.

11、184‧‧‧基板固持器12‧‧‧基板固持器本體13‧‧‧臂部14‧‧‧底座15‧‧‧連接部16、86‧‧‧電接點25‧‧‧承載盒台25a‧‧‧承載盒27‧‧‧基板搬送裝置28‧‧‧移動機構29‧‧‧基板裝卸機構30‧‧‧儲倉32‧‧‧預濕槽33‧‧‧預浸泡槽34‧‧‧預淋洗槽35‧‧‧吹氣槽36‧‧‧淋洗槽37‧‧‧基板固持器搬送裝置38‧‧‧溢流槽39‧‧‧鍍覆槽43‧‧‧底部45‧‧‧槳50‧‧‧調節板51‧‧‧貫穿部52‧‧‧本體部60‧‧‧陽極固持器62‧‧‧陽極64‧‧‧陽極遮罩68‧‧‧虛設基板70、74、76‧‧‧遮蔽板72、78、80、781～788‧‧‧引導部82‧‧‧封閉部84‧‧‧擋止部88‧‧‧封條90‧‧‧堤部94、176、178‧‧‧開關96、122、124、140、150‧‧‧箭頭98‧‧‧***口100‧‧‧鍍覆裝置102、104‧‧‧位置106‧‧‧開口108‧‧‧開口形成機構110‧‧‧裝載/卸載部112、114‧‧‧擋板116、118‧‧‧操縱杆120‧‧‧處理部120A‧‧‧前處理、後處理部120B‧‧‧鍍覆處理部126‧‧‧中心128‧‧‧壁部130、132‧‧‧構件136‧‧‧第一貫穿孔134‧‧‧空氣138、144‧‧‧管線142、152‧‧‧自動閥148‧‧‧第二貫穿孔154‧‧‧供給量調整機構156‧‧‧VMS儲槽158、166‧‧‧儲槽160‧‧‧公用設備162‧‧‧泵164‧‧‧鍍覆液供給單元168‧‧‧第一直流電源170‧‧‧整流器172‧‧‧第一配線174‧‧‧第二配線175‧‧‧控制器175A‧‧‧CPU175B‧‧‧記憶體175C‧‧‧控制部180、182‧‧‧長度A1、L1‧‧‧距離B1‧‧‧長度CH1、CH2、CH3、CH4‧‧‧配線CP1‧‧‧接點位置D1‧‧‧極間距離Q‧‧‧鍍覆液S1‧‧‧方形基板X、Y、Z‧‧‧方向11, 184‧‧‧substrate holder 12‧‧‧substrate holder body 13‧‧‧arm part 14‧‧‧base 15‧‧‧connecting part 16, 86‧‧‧electrical contact 25‧‧‧carrying box platform 25a‧‧‧carrying box 27‧‧‧substrate transfer device 28‧‧‧moving mechanism 29‧‧‧substrate loading and unloading mechanism 30‧‧‧storage bin 32‧‧‧pre-wetting tank 33‧‧‧presoaking tank 34‧ ‧‧Pre-rinse tank 35‧‧‧air blowing tank 36‧‧‧rinse tank 37‧‧‧substrate holder conveying device 38‧‧‧overflow tank 39‧‧‧plating tank 43‧‧‧bottom 45‧‧‧paddle 50‧‧‧regulating plate 51‧‧‧through part 52‧‧‧body part 60‧‧‧anode holder 62‧‧‧anode 64‧‧‧anode shield 68‧‧‧dummy substrate 70, 74, 76‧ ‧‧Shading plates 72, 78, 80, 781～788‧‧‧Guiding part 82‧‧‧Closing part 84‧‧‧Stopping part 88‧‧‧Seal 90‧‧‧Edge 94, 176, 178‧‧‧Switches 96, 122, 124, 140, 150‧‧Arrow 98‧‧Insert port 100‧‧‧plating device 102, 104‧‧‧position 106‧‧ ‧Opening 108‧‧‧Opening Forming Mechanism 110‧‧‧Loading/Unloading Parts 112, 114‧‧‧Baffles 116, 118‧‧‧Joystick 120‧‧‧Processing Part 120A‧‧‧Processing Part 120A‧‧‧Processing Part 120B‧‧‧Plating Processing Part 126 144‧‧‧Pipelines 142, 152‧‧‧Automatic valve 148‧‧‧Second through hole 154‧‧‧Supply adjustment mechanism 156‧‧‧VMS storage tank 158, 166‧‧‧Storage tank 160‧‧‧Public equipment 162‧‧‧Pump 164‧‧‧plating solution supply unit 168‧‧‧First DC power supply 170‧‧‧Rectifier 172‧‧‧First wiring 174‧‧‧Second distribution Line 175‧‧‧Controller 175A‧‧‧CPU175B‧‧‧Memory 175C‧‧‧Control Unit 180, 182‧‧‧‧‧‧Length A1, L1‧‧‧Distance B1‧‧‧Length CH1, CH2, CH3, CH4‧‧‧Wiring CP1‧‧‧Contact Position D1‧‧‧Distance between electrodes Q‧‧‧plating solution S1‧‧‧square substrate X, Y, Z‧‧‧direction

圖1為本實施形態的鍍覆裝置的總體配置圖。圖2為圖1所示的鍍覆裝置中使用的基板固持器的概略平面圖。圖3為圖2所示的基板固持器所保持的方形基板的概略平面圖。圖4為表示圖1所示的處理部的鍍覆槽及溢流槽的概略縱截正面圖。圖5為圖4所示的鍍覆槽的截面圖。圖6為表示設於基板固持器上的引導部的正面圖。圖7（a）及圖7（b）為表示引導部周邊的基板固持器的詳細構造的圖。圖8（a）～圖8（c）為遮蔽板的正面圖。圖9為開口形成機構的正面圖。圖10（a）～圖10（c）為表示開口形成機構的動作的圖。圖11為表示本發明的另一實施形態的鍍覆槽及溢流槽的概略縱截正面圖。圖12為圖11所示的鍍覆槽的截面圖。圖13（a）及圖13（b）為設有用於供給鍍覆液的構造的與圖11對應的圖。圖14為設有用於供給添加劑的構造的與圖12對應的圖。圖15為表示供給量調整機構的構成的方塊圖。圖16為表示鍍覆電路的構成的說明圖。圖17表示進行四片方形基板的同時鍍覆的示例。圖18表示僅鍍覆三片方形基板S1的示例。圖19為從陽極側觀察本發明的又一實施形態的基板固持器所保持的方形基板及虛設基板的圖。圖20表示配置於圖19所示的實施形態的基板固持器與陽極之間的調節板。FIG. 1 is an overall configuration diagram of a plating apparatus according to this embodiment. Fig. 2 is a schematic plan view of a substrate holder used in the plating apparatus shown in Fig. 1 . FIG. 3 is a schematic plan view of a square substrate held by the substrate holder shown in FIG. 2 . Fig. 4 is a schematic longitudinal sectional front view showing a plating tank and an overflow tank of the processing unit shown in Fig. 1 . FIG. 5 is a cross-sectional view of the plating tank shown in FIG. 4 . Fig. 6 is a front view showing a guide provided on the substrate holder. 7( a ) and 7 ( b ) are diagrams showing the detailed structure of the substrate holder around the guide portion. 8( a ) to 8 ( c ) are front views of the shielding plate. Fig. 9 is a front view of the opening forming mechanism. 10( a ) to 10 ( c ) are diagrams showing the operation of the opening forming mechanism. Fig. 11 is a schematic vertical front view showing a plating tank and an overflow tank according to another embodiment of the present invention. FIG. 12 is a cross-sectional view of the plating tank shown in FIG. 11 . FIG. 13( a ) and FIG. 13( b ) are diagrams corresponding to FIG. 11 provided with a structure for supplying the plating solution. Fig. 14 is a view corresponding to Fig. 12 provided with a configuration for supplying additives. Fig. 15 is a block diagram showing the configuration of a supply amount adjustment mechanism. FIG. 16 is an explanatory diagram showing the configuration of a plating circuit. FIG. 17 shows an example of simultaneous plating of four square substrates. FIG. 18 shows an example in which only three square substrates S1 are plated. FIG. 19 is a view of a square substrate and a dummy substrate held by a substrate holder according to still another embodiment of the present invention viewed from the anode side. Fig. 20 shows an adjustment plate disposed between the substrate holder and the anode in the embodiment shown in Fig. 19 .

11‧‧‧基板固持器 11‧‧‧substrate holder

16‧‧‧電接點 16‧‧‧electric contact

50‧‧‧調節板 50‧‧‧Adjusting plate

51‧‧‧貫穿部 51‧‧‧Through part

52‧‧‧本體部 52‧‧‧Body Department

60‧‧‧陽極固持器 60‧‧‧Anode holder

62‧‧‧陽極 62‧‧‧anode

64‧‧‧陽極遮罩 64‧‧‧Anode shield

68‧‧‧虛設基板 68‧‧‧dummy substrate

70、74、76‧‧‧遮蔽板 70, 74, 76‧‧‧Shielding board

72、78、80‧‧‧引導部 72, 78, 80‧‧‧Guidance Department

82‧‧‧封閉部 82‧‧‧closed department

94、178‧‧‧開關 94, 178‧‧‧switch

96‧‧‧箭頭 96‧‧‧arrow

168‧‧‧第一直流電源 168‧‧‧The first DC power supply

172‧‧‧第一配線 172‧‧‧First wiring

A1、L1‧‧‧距離 A1, L1‧‧‧distance

B1‧‧‧長度 B1‧‧‧Length

D1‧‧‧極間距離 D1‧‧‧distance between poles

S1‧‧‧方形基板 S1‧‧‧square substrate

X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction

Claims

一種鍍覆裝置，其特徵在於包括：多個基板固持器，以各自可保持一個基板的方式構成；多個陽極固持器，以各自可保持一個陽極的方式構成，且所述多個陽極與所述多個基板以一對一而對應，所述多個陽極各自是以與對應的所述基板相向地配置的方式構成；以及多個第一遮蔽部，逐個設於對應的所述陽極與所述基板之間，且所述第一遮蔽部各自是以具有形成於對應的所述陽極與對應的所述基板之間的電力線能穿過的筒狀的貫穿部，並且所述貫穿部調整對應的所述陽極與對應的所述基板之間的電場的方式構成，其中，所述多個第一遮蔽部中的至少一個為封閉部，所述封閉部是以具有用於封閉所述貫穿部的第二遮蔽部，且利用所述第二遮蔽部使形成於可保持的所述陽極與可保持的所述基板之間的所述電力線無法穿過的方式構成，所述多個第一遮蔽部中的至少另一個不具有所述第二遮蔽部。 A coating device characterized by comprising: a plurality of substrate holders configured to hold one substrate each; a plurality of anode holders configured to hold one anode each, and the plurality of anodes correspond to the plurality of substrates in a one-to-one manner, and each of the plurality of anodes is configured to face the corresponding substrate; wherein at least one of the plurality of first shielding portions is a sealing portion, and the sealing portion has a second shielding portion for sealing the penetrating portion, and the second shielding portion prevents the line of electric force formed between the holdable anode and the holdable substrate from passing through, and at least one of the plurality of first shielding portions does not have the second shielding portion.

如申請專利範圍第1項所述的鍍覆裝置，其中所述第二遮蔽部具備分別配置於所述貫穿部的所述基板固持器側和所述陽極固持器側的第三遮蔽部。 The coating device according to claim 1, wherein the second shielding part includes third shielding parts disposed on the substrate holder side and the anode holder side of the penetrating part, respectively.

如申請專利範圍第1項或第2項所述的鍍覆裝置，其中可對所述封閉部裝卸所述第二遮蔽部。 The coating device according to claim 1 or claim 2, wherein the second shielding part can be attached to and detached from the sealing part.

如申請專利範圍第1項或第2項所述鍍覆裝置，其中所述第二遮蔽部具有能在所述第二遮蔽部中形成開口部的開口形成機構，在封閉所述貫穿部時，利用所述開口形成機構封閉所述開口部。 The coating device according to claim 1 or claim 2, wherein the second shielding part has an opening forming mechanism capable of forming an opening in the second shielding part, and the opening is closed by the opening forming mechanism when closing the penetrating part.

如申請專利範圍第1項所述的鍍覆裝置，其中所述第一遮蔽部具有調整所述貫穿部的開口面積的調整機構，所述調整機構能夠封閉所述貫穿部。 The coating device according to claim 1 of the patent application, wherein the first shielding part has an adjustment mechanism for adjusting the opening area of the penetration part, and the adjustment mechanism can close the penetration part.

如申請專利範圍第1項或第2項所述的鍍覆裝置，其中設有所述封閉部的所述陽極固持器具有設於所述陽極固持器可保持的所述陽極與所述封閉部之間的第四遮蔽部，所述第四遮蔽部是以形成於所述陽極與所述基板之間的所述電力線無法穿過的方式構成，以及/或者設有所述封閉部的所述基板固持器具有設於所述基板固持器可保持的所述基板與所述封閉部之間的第五遮蔽部，所述第五遮蔽部是以可在所述陽極與所述基板之間流動的所述電力線無法穿過的方式構成。 The coating device as described in item 1 or item 2 of the scope of patent application, wherein the anode holder provided with the sealing part has a fourth shielding part provided between the anode that can be held by the anode holder and the sealing part, and the fourth shielding part is configured in such a way that the electric force line formed between the anode and the substrate cannot pass through, and/or the substrate holder provided with the sealing part has a fifth shielding part provided between the substrate that can be held by the substrate holder and the sealing part, and the fifth shielding part can be placed between the sealing part and the anode holder. The electric force line flowing between the anode and the substrate cannot pass through.

如申請專利範圍第1項或第2項所述的鍍覆裝置，其中所述多個基板固持器一體化，以及/或者所述多個陽極固持器一體化，以及/或者所述多個第一遮蔽部一體化。 The coating device as described in item 1 or item 2 of the scope of application, wherein the plurality of substrate holders are integrated, and/or the plurality of anode holders are integrated, and/or the plurality of first shielding parts are integrated.

一種鍍覆裝置，其特徵在於包括：多個基板固持器，以各自保持一個基板的方式構成；多個陽極固持器，以各自保持一個陽極的方式構成，且所述多個陽極與所述多個基板以一對一而對應，所述多個陽極各自是以與對應的一個所述基板相向地配置的方式構成；以及多個遮蔽部，針對所述陽極固持器各自設置一個，且所述遮蔽部各自是以設於對應的所述陽極固持器與所述基板固持器之間，並且具有形成於所述陽極與所述基板之間的電力線能穿過的筒狀的貫穿部的方式構成；且形成所述貫穿部各自的所述遮蔽部的壁部的所述陽極固持器側是在對應的所述陽極的外周附近配置於所述陽極固持器上，由所述貫穿部各自所形成的貫穿空間彼此分別獨立。 A coating device, characterized in that it comprises: a plurality of substrate holders configured to hold one substrate each; a plurality of anode holders configured to hold an anode each, and the plurality of anodes correspond to the plurality of substrates one-to-one, and each of the plurality of anodes is and a plurality of shielding parts, one for each of the anode holders, and each of the shielding parts is provided between the corresponding anode holder and the substrate holder and has a cylindrical penetration part formed between the anode and the substrate through which the electric force line can pass; and the anode holder side of the wall part of the shielding part forming each of the penetration parts is arranged on the anode holder in the vicinity of the outer periphery of the corresponding anode, by The penetrating spaces formed by the penetrating parts are independent of each other.

如申請專利範圍第8項所述的鍍覆裝置，其中所述壁部具有用於將所述貫穿部內的氣體從所述貫穿部中去除的第一貫穿孔。 The coating device according to claim 8, wherein the wall part has a first through hole for removing the gas in the through part from the through part.

如申請專利範圍第8項或第9項所述的鍍覆裝置，其中所述壁部具有用於將鍍覆液的添加劑供給於所述貫穿部內的第二貫穿孔。 The plating device according to claim 8 or claim 9, wherein the wall part has a second through hole for supplying the additive of the plating solution into the through part.

如申請專利範圍第10項所述的鍍覆裝置，其中具有調整所述添加劑的供給量的供給量調整機構。 The coating apparatus according to claim 10, further comprising a supply amount adjustment mechanism for adjusting the supply amount of the additive.

如申請專利範圍第8項或第9項所述的鍍覆裝置，其中所述多個基板固持器一體化，以及/或者所述多個陽極固持器一體化，以及/或者所述多個遮蔽部一體化。 The coating device as described in item 8 or item 9 of the scope of application, wherein the plurality of substrate holders are integrated, and/or the plurality of anode holders are integrated, and/or the plurality of shielding parts are integrated.

如申請專利範圍第1項或第8項所述的鍍覆裝置，其中從自第一直流電源分支的多根第一配線分別獨立地將第一電流供給於所述多個基板各自，以及/或者從自第二直流電源分支的多根第二配線分別獨立地將第二電流供給於所述多個陽極各自。 The coating device as described in item 1 or item 8 of the scope of patent application, wherein the first current is supplied independently from a plurality of first wires branched from the first DC power supply. A second current is supplied to each of the plurality of substrates, and/or independently from a plurality of second wires branched from the second DC power supply to each of the plurality of anodes.

如申請專利範圍第13項所述的鍍覆裝置，其中流經所述多根第一配線各自的所述第一電流可分別獨立地控制，以及/或者流經所述多根第二配線各自的所述第二電流可分別獨立地控制。 The plating device according to claim 13, wherein the first current flowing through each of the plurality of first wirings can be independently controlled, and/or the second current flowing through each of the plurality of second wirings can be independently controlled.

一種非暫時性電腦可讀存儲介質，其特徵在於：記錄有用於使電腦作為控制所述多個第一電流及/或所述多個第二電流的接通/斷開的控制機構而發揮功能的程式，所述電腦用於控制如申請專利範圍第13項或第14項所述的鍍覆裝置。 A non-transitory computer-readable storage medium, characterized in that: a program for enabling a computer to function as a control mechanism for controlling on/off of the plurality of first currents and/or the plurality of second currents is recorded, and the computer is used to control the coating device as described in claim 13 or claim 14 of the scope of the patent application.