TWI803378B - 驅動電路薄膜以及具有驅動電路薄膜的顯示裝置 - Google Patents
驅動電路薄膜以及具有驅動電路薄膜的顯示裝置 Download PDFInfo
- Publication number
- TWI803378B TWI803378B TW111124665A TW111124665A TWI803378B TW I803378 B TWI803378 B TW I803378B TW 111124665 A TW111124665 A TW 111124665A TW 111124665 A TW111124665 A TW 111124665A TW I803378 B TWI803378 B TW I803378B
- Authority
- TW
- Taiwan
- Prior art keywords
- driving circuit
- flexible substrate
- gate driving
- display device
- source driver
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000010408 film Substances 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000013461 design Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 239000013585 weight reducing agent Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
驅動電路薄膜包含柔性基板、閘極驅動電路以及源極驅動器。閘極驅動電路設置於柔性基板上，其中閘極驅動電路包含薄膜電晶體。源極驅動器設置於柔性基板上。
Description
本揭露是有關於一種驅動電路薄膜，以及具有驅動電路薄膜的顯示裝置。
目前的顯示裝置通常以玻璃覆晶封裝COG (Chip On Glass)製程，將閘極驅動器以及源極驅動器放置於顯示裝置的邊緣區域。然而，為了保留設置閘極驅動器以及源極驅動器所需的空間，使得顯示裝置難以做到四邊窄邊緣區的設計。
有鑑於此，如何提供一種可克服上述問題的顯示面板仍是目前業界努力研究的目標之一。
本揭露之一技術態樣為一種驅動電路薄膜，配置以接合至顯示面板的邊緣區。
在本揭露一實施例中，驅動電路薄膜包含柔性基板、閘極驅動電路以及源極驅動器。閘極驅動電路設置於柔性基板上，其中閘極驅動電路包含薄膜電晶體。源極驅動器設置於柔性基板上。
在本揭露一實施例中，閘極驅動電路透過沉積製程將驅動電路直接生長於柔性基板上，薄膜電晶體為低溫多晶矽薄膜電晶體或氧化物薄膜電晶體。
在本揭露一實施例中，驅動薄還包含軟性印刷電路板。柔性基板具有第一側邊以及第二側邊，第一側邊配置以接合至顯示面板的邊緣區，第二側邊配置以連接軟性印刷電路板，且柔性基板的面積大於軟性印刷電路板的面積。
本揭露之另一技術態樣為一種顯示裝置。
在本揭露一實施例中，顯示裝置包含顯示面板以及驅動電路薄膜。顯示面板具有顯示區以及圍繞顯示區的周邊區，其中周邊區具有邊緣區。驅動電路薄膜配置以接合至顯示面板的邊緣區，其中驅動電路薄膜包含柔性基板、閘極驅動電路以及源極驅動器。閘極驅動電路設置於柔性基板上，其中閘極驅動電路包含薄膜電晶體。源極驅動器設置於柔性基板上。
在本揭露一實施例中，閘極驅動電路與該源極驅動器位在該顯示面板的周邊區之外。
在本揭露一實施例中，顯示面板包含資料線、掃描線以及選擇線，其中資料線與選擇線延伸於第一方向，且掃描線延伸於垂直於第一方向的第二方向。
在本揭露一實施例中，選擇線電性連接掃描線，選擇線電性連接至閘極驅動電路，且資料線電性連接至源極驅動器。
在本揭露一實施例中，閘極驅動電路位在顯示區與源極驅動器之間，且資料線延伸穿過閘極驅動電路。
在本揭露一實施例中，閘極驅動電路包含通道，且資料線位在該通道中。
在本揭露一實施例中，顯示裝置還包含電壓轉換器，設置於柔性基板上。
在上述實施例中，本揭露的驅動電路薄膜可同時具有玻璃覆晶封裝製程中電路線寬較精細的優點以及覆晶薄製程中縮小體積、減輕重量、自由彎折等優點。藉由結合驅動電路薄膜以及T-wire TFT陣列設計於顯示面板中，可使閘極驅動電路與源極驅動器位在顯示裝置的同一側，已達到使顯示裝置具有四邊窄邊緣區的技術效果。
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。且為了清楚起見，圖式中之層和區域的厚度可能被誇大，並且在圖式的描述中相同的元件符號表示相同的元件。
第1圖為根據本揭露一實施例之驅動電路薄膜100的上視圖。驅動電路薄膜100包含柔性基板110、閘極驅動電路120以及源極驅動器130。閘極驅動電路120與源極驅動器130皆設置於柔性基板110上。舉例來說，柔性基板110是由聚醯亞胺 (Polyimide， PI)構成的薄膜。閘極驅動電路120為低溫多晶矽薄膜電晶體(Low Temperature Poly-silicon Thin-Film Transistor，LTPS-TFT)或氧化物電晶體(Oxide Thin-Film Transistor)。閘極驅動電路120是透過沉積製程直接將驅動電路生長於柔性基板110上，而非為積體電路(integrated circuit; IC)，且非利用電性連接件(例如導電凸塊或焊球等)並透過焊接的方式連接至顯示面板200。源極驅動器130則為集成电路(integrated circuit; IC)。源極驅動器130是透過電性連接件電性連接至柔性基板110上。
具體而言，以低溫多晶矽薄膜電晶體為例，閘極驅動電路120的製程，可以先以承載板暫時支撐柔性基板110。在柔性基板110上沉積阻隔層(barrier layer)，以阻隔後續雷射製程中來自雷射光的破壞。接著，沉積非晶矽(a-Si)材料於阻隔層上方，並透過雷射於低溫狀態下使非晶矽材料轉換為多晶矽(Poly-silicon)材料，最後，透過雷射將柔性基板110與承載板分離。換句話說，本揭露的驅動電路薄膜100是將薄膜電晶體與驅動器結合於同一柔性基板110上的設計。
在傳統的覆晶薄膜製程(Chip on film，COF)中，閘極驅動器以及源極驅動器透過電性連接件接合至軟性印刷電路板(FPC)上。然而，覆晶薄膜製程中的線路間距較難以縮減，使得接合於軟性印刷電路板上的驅動器的電路線寬精細度受限。
換句話說，本揭露藉由直接形成閘極驅動電路120於柔性基板110上，取代傳統的覆晶薄膜製程。由於低溫多晶矽薄膜電晶體或氧化物電晶體的製程精度較高，使得閘極驅動電路120的電路線寬較為精細。設置於柔性基板110上的源極驅動器130的電性連接件的間距(例如凸塊之間的間距)也可縮小至大約10微米。因此，驅動電路薄膜100的設計可同時具有縮小體積、減輕重量以及自由彎折等優點。
第2圖為根據本揭露一實施例之顯示裝置10的上視圖。顯示裝置10包含顯示面板200與第1圖中所示的驅動電路薄膜100。顯示面板200包含顯示區DR與周邊區PR。周邊區PR圍繞顯示區DR。顯示面板200的周邊區PR包含外框210。外框210由四個邊緣區210a~210d構成。驅動電路薄膜100的柔性基板110具有第一側邊112。驅動電路薄膜100的第一側邊112配置以接合至顯示面板200右側的邊緣區210a。換句話說，閘極驅動電路120與源極驅動器130位在顯示面板200的同一側。此外，閘極驅動電路120與源極驅動器130皆位在顯示面板200的周邊區PR之外。
本實施例的顯示裝置10可以是例如電泳顯示器(Electro-Phoretic Display，EPD)。在其他實施例中，顯示裝置10也可以是液晶顯示器(Liquid Crystal Display，LCD)等反射式顯示器，或者是有機電激發光顯示器(Organic Electrical Luminescence，OLED)。
在玻璃覆晶封裝製程(Chip on glass，COG) 中，閘極驅動器以及源極驅動器藉由導電膠接合於周邊區的玻璃上。因此，閘極驅動器以及源極驅動器需藉由導電連接件(例如導電凸塊)與玻璃背板上的導電墊電性連接。玻璃覆晶封裝製程中的周邊區需保留設置閘極驅動器以及源極驅動器的空間。由此可知，相較於玻璃覆晶封裝製程，本揭露中的閘極驅動電路120與源極驅動器130皆設置在柔性基板110上，而非顯示面板200的周邊區PR的外框210，因此，顯示面板200的邊緣區210a的寬度T1可縮減。
第3圖為根據本揭露一實施例之顯示裝置的顯示區DR的局部上視圖。同時參照第2圖與第3圖。顯示面板200的顯示區DR包含由多條訊號線路構成的畫素陣列。在第2圖中，以掃描線220、資料線230以及選擇線240作為示例。資料線230與選擇線240延伸於第一方向D1，且掃描線220延伸於第二方向D2。第二方向D2垂直於第一方向D1。在本實施例中，選擇線240電性連接掃描線220。
在本實施例中，選擇線240電性連接至閘極驅動電路120，且資料線230電性連接至源極驅動器130。延伸於第二方向D2的掃描線220透過選擇線240電性連接至閘極驅動電路120。換句話說，沿著第二方向D2方向上傳遞的訊號可藉由選擇線240傳輸於第一方向D1上。因此，這樣的線路設計可達到將閘極驅動電路120與源極驅動器130設置於顯示面板200的同一側的效果。
第3圖中所示的線路設計為T-wire TFT陣列設計。在其他實施例中，也可以使資料線230透過選擇線240電性連接至源極驅動器130。也就是說，T-wire TFT陣列設計也可以是將資料線230與沿著第二方向D2延伸的選擇線電性連接。藉此將沿著第一方向D1上傳遞的訊號透過沿著第二方向D2延伸的選擇線傳輸於第二方向D2上。在此條件下，可選擇將驅動電路薄膜100連接至周邊區PR的邊緣區210b上(見第2圖)。換句話說，只要可以使電性連接至閘極驅動電路120以及源極驅動器130的線路沿著同一方向上延伸，以達到將閘極驅動電路120以及源極驅動器130設置於顯示面板200的周邊區PR的同一側之效果即可。
如第2圖所示，在本實施例中，顯示面板200下方的邊緣區210b具有寬度T2、左側的邊緣區210c具有寬度T3以及上方的邊緣區210d具有寬度T4。由於閘極驅動電路120以及源極驅動器130設置於顯示面板200的邊緣區210a，寬度T2~寬度T4可縮減。舉例來說，邊緣區210b、邊緣區210c以及邊緣區210d的寬度T2~T4大約為1毫米至5毫米。此外，由於邊緣區210a僅需保留電性連接驅動電路薄膜100的空間，而不需要設置閘極驅動電路120以及源極驅動器130，因此右側邊緣區210d的寬度T1也可縮減至大約4毫米至6毫米的範圍中。
根據上述，本揭露藉由結合驅動電路薄膜100以及T-wire TFT陣列設計，可使得顯示面板200具有四邊窄邊緣區的技術效果。此外，驅動電路薄膜100可兼具有玻璃覆晶封裝 (COG) 製程中電路線寬較精細的優點以及覆晶薄膜(COF)製程中縮小體積、減輕重量、自由彎折等優點。
第4圖為第2圖中區域A的放大圖。區域A中繪示了驅動電路薄膜100的閘極驅動電路120與源極驅動器130的局部放大圖。在本實施例中，驅動電路薄膜100的閘極驅動電路120具有多個彼此分隔的區塊。相鄰的區塊構成通道122。資料線230自閘極驅動電路120的左側穿過通道122後連接至源極驅動器130。如同前述，由於閘極驅動電路120可透過薄膜電晶體製程直接形成在柔性基板110上，因此形成通道122所需的曝光顯影製程等步驟可彈性地結合於閘極驅動電路120的製程中。換句話說，資料線230電性連接至源極驅動器130的走線排列方式不會受限於閘極驅動電路120與源極驅動器130的位置。由此可知，這樣的設計可提升閘極驅動電路120與源極驅動器130的線路精密度並改善走線排列。應理解到，第4圖中的閘極驅動電路120的通道122的數量以及排列僅為示例，本領域技術人士可根據實際需求調整通道122的數量與排列方式。
第5圖為根據本揭露另一實施例之驅動電路薄膜100a的上視圖。驅動電路薄膜100a具有設置於柔性基板110上的電壓轉換器140(level shift)。電壓轉換器140電性連接閘極驅動電路120。電壓轉換器140可輔助轉換閘極驅動電路120的輸出電壓。在其他實施例中，電壓轉換器140也可以是設置在驅動電路薄膜100a之外的驅動面板電路300。
驅動電路薄膜100a具有軟性印刷電路板150。柔性基板110具有與第一側邊112相對的第二側邊114。第二側邊114配置以連接軟性印刷電路板150。在本實施例中，軟性印刷電路板150配置以提供柔性基板110電性連接至驅動面板電路300所需的機械應力，上述的驅動面板電路300，用來配置提供面板的訊號電路或電源電路。驅動面板電路300，可經由軟性印刷電路板150電性連接至柔性基板110，亦可直接電性連接至柔性基板110。如第5圖所示，柔性基板110的面積大於軟性印刷電路板150的面積。換句話說，軟性印刷電路板150在此實施例中具有連接器的功能。在一些實施例中，電壓轉換器140可設置於驅動面板電路300上並電性連接至閘極驅動電路120。
綜上所述，本揭露的驅動電路薄膜可兼具有玻璃覆晶封裝 (COG) 製程中電路線寬較精細的優點以及覆晶薄膜(COF)製程中縮小體積、減輕重量、自由彎折等優點。藉由結合驅動電路薄膜以及T-wire TFT陣列設計於顯示面板中，可使閘極驅動電路與源極驅動器位在顯示裝置的同一側，已達到使顯示裝置具有四邊窄邊緣區的技術效果。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10:顯示裝置
100,100a:驅動電路薄膜
110:柔性基板
112:第一側邊
114:第二側邊
120:閘極驅動電路
122:通道
130:源極驅動器
140:電壓轉換器
150:軟性印刷電路板
200:顯示面板
210:外框
210a,210b,210c,210d:邊緣區
220:掃描線
230:資料線
240:選擇線
300:驅動面板電路
A:區域
DR:顯示區
PR:周邊區
T1,T2,T3,T4:寬度
D1:第一方向
D2:第二方向
第1圖為根據本揭露一實施例之驅動電路薄膜的上視圖。
第2圖為根據本揭露一實施例之顯示裝置的上視圖。
第3圖為根據本揭露一實施例之顯示裝置的顯示區的局部上視圖。
第4圖為第2圖中區域A的放大圖。
第5圖為根據本揭露另一實施例之驅動電路薄膜的上視圖。
100:電路薄膜
110:柔性基板
112:第一側邊
120:閘極驅動電路
130:源極驅動器
D1:第一方向
D2:第二方向
Claims (10)
- 一種驅動電路薄膜，配置以接合至一顯示面板的一邊緣區，其中該驅動電路薄膜包含： 一柔性基板； 一閘極驅動電路，設置於該柔性基板上，其中該閘極驅動電路包含薄膜電晶體；以及 一源極驅動器，設置於該柔性基板上。
- 如請求項1所述之驅動電路薄膜，其中該閘極驅動電路透過沉積製程將驅動電路直接生長於該柔性基板上，其中該薄膜電晶體為低溫多晶矽薄膜電晶體(Low Temperature Poly-silicon Thin-Film Transistor)或氧化物薄膜電晶體(Oxide Thin-Film Transistor)。
- 如請求項1所述之驅動電路薄膜，還包含一軟性印刷電路板，其中該柔性基板具有一第一側邊以及一第二側邊，該第一側邊配置以接合至該顯示面板的該邊緣區，且該第二側邊配置以連接該軟性印刷電路板，其中該柔性基板的面積大於該軟性印刷電路板的面積。
- 一種顯示裝置，包含： 一顯示面板，具有一顯示區以及圍繞該顯示區的一周邊區，其中該周邊區具有一邊緣區；以及 一驅動電路薄膜，配置以接合至該顯示面板的該邊緣區，其中該驅動電路薄膜包含： 一柔性基板； 一閘極驅動電路，設置於該柔性基板上，其中該閘極驅動電路包含薄膜電晶體；以及 一源極驅動器，設置於該柔性基板上。
- 如請求項4所述之顯示裝置，其中該閘極驅動電路與該源極驅動器位在該顯示面板的周邊區之外。
- 如請求項4所述之顯示裝置，其中該顯示面板包含一資料線、一掃描線以及一選擇線，其中該資料線與該選擇線延伸於一第一方向，且該掃描線延伸於垂直於該第一方向的一第二方向。
- 如請求項6所述之顯示裝置，其中該選擇線電性連接該掃描線，該選擇線電性連接至該閘極驅動電路，該資料線電性連接至該源極驅動器。
- 如請求項6所述之顯示裝置，其中該閘極驅動電路位在該顯示區與該源極驅動器之間，且該資料線延伸穿過該閘極驅動電路。
- 如請求項8所述之顯示裝置，其中該閘極驅動電路包含一通道，且該資料線位在該通道中。
- 如請求項4所述之顯示裝置，還包含一電壓轉換器，設置於該柔性基板上。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163217751P | 2021-07-01 | 2021-07-01 | |
| US63/217,751 | 2021-07-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202303549A TW202303549A (zh) | 2023-01-16 |
| TWI803378B true TWI803378B (zh) | 2023-05-21 |
Family
ID=84737598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111124665A TWI803378B (zh) | 2021-07-01 | 2022-07-01 | 驅動電路薄膜以及具有驅動電路薄膜的顯示裝置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230005963A1 (zh) |
| CN (1) | CN115565478A (zh) |
| TW (1) | TWI803378B (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160181346A1 (en) * | 2014-12-23 | 2016-06-23 | Lg Display Co., Ltd. | Flexible Display Device with Gate-In-Panel Circuit |
| US20190362685A1 (en) * | 2018-05-22 | 2019-11-28 | E Ink Holdings Inc. | Display device and display driving circuit with electromagnetic interference suppression capability |
| TWI682516B (zh) * | 2018-08-28 | 2020-01-11 | 元太科技工業股份有限公司 | 線路結構 |
| US20200152913A1 (en) * | 2018-11-12 | 2020-05-14 | Lg Display Co., Ltd. | Panel, transistor and electronic device |
-
2022
- 2022-07-01 US US17/810,347 patent/US20230005963A1/en active Pending
- 2022-07-01 TW TW111124665A patent/TWI803378B/zh active
- 2022-07-01 CN CN202210773494.1A patent/CN115565478A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160181346A1 (en) * | 2014-12-23 | 2016-06-23 | Lg Display Co., Ltd. | Flexible Display Device with Gate-In-Panel Circuit |
| US20190362685A1 (en) * | 2018-05-22 | 2019-11-28 | E Ink Holdings Inc. | Display device and display driving circuit with electromagnetic interference suppression capability |
| TWI682516B (zh) * | 2018-08-28 | 2020-01-11 | 元太科技工業股份有限公司 | 線路結構 |
| US20200152913A1 (en) * | 2018-11-12 | 2020-05-14 | Lg Display Co., Ltd. | Panel, transistor and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115565478A (zh) | 2023-01-03 |
| US20230005963A1 (en) | 2023-01-05 |
| TW202303549A (zh) | 2023-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7714974B2 (en) | Liquid crystal display device and method of fabricating the same | |
| US7548225B2 (en) | Liquid crystal display device and method for fabricating the same | |
| US7636145B2 (en) | Display apparatus and method of manufacturing the same | |
| US7218371B2 (en) | Liquid crystal display | |
| CN102237412B (zh) | 图像显示装置及其制造方法 | |
| US20100002180A1 (en) | Liquid crystal display device and method of fabricating the same | |
| US20030179158A1 (en) | Wiring substrate connected structure, and display device | |
| US20080143944A1 (en) | Thin film transistor substrate and liquid crystal display apparatus having the same | |
| KR20100022762A (ko) | 액정 표시 장치 | |
| US8154120B2 (en) | Chip-mounted film package | |
| KR20170113748A (ko) | 표시 장치 및 이의 제조 방법 | |
| US7929085B2 (en) | Liquid crystal display device and method of fabricating the same | |
| US7710525B2 (en) | Thin film transistor, fabrication method thereof, liquid crystal display panel device having the same, and fabrication method thereof | |
| US9261734B2 (en) | Display apparatus with uniform cell gap | |
| JP5431993B2 (ja) | 表示装置 | |
| TWI803378B (zh) | 驅動電路薄膜以及具有驅動電路薄膜的顯示裝置 | |
| US9807881B2 (en) | Semiconductor device | |
| KR100914782B1 (ko) | 박막트랜지스터 기판과 이를 이용한 액정표시장치 | |
| KR20100041429A (ko) | 씨오지 타입 액정표시장치용 어레이 기판 | |
| JP2005300920A (ja) | 表示装置及び液晶表示装置 | |
| US20140124785A1 (en) | Semiconductor device and method for manufacturing same | |
| JPH0688971A (ja) | 液晶表示装置及びその製造方法 | |
| KR100637058B1 (ko) | 액정표시장치 | |
| KR20050038133A (ko) | 박막 트랜지스터 표시판 | |
| KR20070044204A (ko) | 액정표시장치 |