TWI801260B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI801260B TWI801260B TW111121544A TW111121544A TWI801260B TW I801260 B TWI801260 B TW I801260B TW 111121544 A TW111121544 A TW 111121544A TW 111121544 A TW111121544 A TW 111121544A TW I801260 B TWI801260 B TW I801260B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210094575A KR20230013753A (ko) | 2021-07-20 | 2021-07-20 | 반도체 장치 |
KR10-2021-0094575 | 2021-07-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202306036A TW202306036A (zh) | 2023-02-01 |
TWI801260B true TWI801260B (zh) | 2023-05-01 |
Family
ID=81386503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111121544A TWI801260B (zh) | 2021-07-20 | 2022-06-10 | 半導體裝置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230022373A1 (zh) |
EP (1) | EP4123704A3 (zh) |
KR (1) | KR20230013753A (zh) |
CN (1) | CN115643755A (zh) |
TW (1) | TWI801260B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130248997A1 (en) * | 2012-03-20 | 2013-09-26 | Samsung Electronics Co., Ltd. | Semiconductor Devices Including Guard Ring Structures |
US20170323893A1 (en) * | 2016-05-04 | 2017-11-09 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of forming semiconductor devices |
CN108400130A (zh) * | 2017-02-08 | 2018-08-14 | 三星电子株式会社 | 半导体装置 |
CN108987406A (zh) * | 2017-05-31 | 2018-12-11 | 三星电子株式会社 | 集成电路器件和制造该集成电路器件的方法 |
CN112309985A (zh) * | 2019-07-30 | 2021-02-02 | 三星电子株式会社 | 制造电容器和半导体器件的方法以及半导体器件和装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4031329B2 (ja) * | 2002-09-19 | 2008-01-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR102089514B1 (ko) * | 2013-12-23 | 2020-03-16 | 삼성전자 주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
KR20180069186A (ko) * | 2016-12-14 | 2018-06-25 | 삼성전자주식회사 | 반도체 메모리 장치 및 이의 제조 방법 |
KR102417846B1 (ko) * | 2016-12-21 | 2022-07-05 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
KR20200115762A (ko) * | 2019-03-25 | 2020-10-08 | 삼성전자주식회사 | 반도체 소자 |
KR20210037211A (ko) * | 2019-09-27 | 2021-04-06 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
-
2021
- 2021-07-20 KR KR1020210094575A patent/KR20230013753A/ko active Search and Examination
-
2022
- 2022-03-29 EP EP22164909.8A patent/EP4123704A3/en active Pending
- 2022-03-30 US US17/657,202 patent/US20230022373A1/en active Pending
- 2022-06-10 TW TW111121544A patent/TWI801260B/zh active
- 2022-07-11 CN CN202210812817.3A patent/CN115643755A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130248997A1 (en) * | 2012-03-20 | 2013-09-26 | Samsung Electronics Co., Ltd. | Semiconductor Devices Including Guard Ring Structures |
US20170323893A1 (en) * | 2016-05-04 | 2017-11-09 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods of forming semiconductor devices |
CN108400130A (zh) * | 2017-02-08 | 2018-08-14 | 三星电子株式会社 | 半导体装置 |
CN108987406A (zh) * | 2017-05-31 | 2018-12-11 | 三星电子株式会社 | 集成电路器件和制造该集成电路器件的方法 |
CN112309985A (zh) * | 2019-07-30 | 2021-02-02 | 三星电子株式会社 | 制造电容器和半导体器件的方法以及半导体器件和装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202306036A (zh) | 2023-02-01 |
CN115643755A (zh) | 2023-01-24 |
US20230022373A1 (en) | 2023-01-26 |
KR20230013753A (ko) | 2023-01-27 |
EP4123704A3 (en) | 2023-04-12 |
EP4123704A2 (en) | 2023-01-25 |
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