TWI800682B - Method for fabricating dielectric layer and applictions thereof - Google Patents

Method for fabricating dielectric layer and applictions thereof Download PDF

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Publication number
TWI800682B
TWI800682B TW108132743A TW108132743A TWI800682B TW I800682 B TWI800682 B TW I800682B TW 108132743 A TW108132743 A TW 108132743A TW 108132743 A TW108132743 A TW 108132743A TW I800682 B TWI800682 B TW I800682B
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TW
Taiwan
Prior art keywords
applictions
dielectric layer
fabricating dielectric
fabricating
layer
Prior art date
Application number
TW108132743A
Other languages
Chinese (zh)
Other versions
TW202111862A (en
Inventor
吳姿錦
黃仁柏
鄧文儀
蔡濱祥
Original Assignee
聯華電子股份有限公司
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Priority to TW108132743A priority Critical patent/TWI800682B/en
Publication of TW202111862A publication Critical patent/TW202111862A/en
Application granted granted Critical
Publication of TWI800682B publication Critical patent/TWI800682B/en

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TW108132743A 2019-09-11 2019-09-11 Method for fabricating dielectric layer and applictions thereof TWI800682B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW108132743A TWI800682B (en) 2019-09-11 2019-09-11 Method for fabricating dielectric layer and applictions thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108132743A TWI800682B (en) 2019-09-11 2019-09-11 Method for fabricating dielectric layer and applictions thereof

Publications (2)

Publication Number Publication Date
TW202111862A TW202111862A (en) 2021-03-16
TWI800682B true TWI800682B (en) 2023-05-01

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TW108132743A TWI800682B (en) 2019-09-11 2019-09-11 Method for fabricating dielectric layer and applictions thereof

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TW (1) TWI800682B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140183649A1 (en) * 2012-12-28 2014-07-03 SK Hynix Inc. Semiconductor device having metal gate and high-k dielectric layer and method for manufacturing the same
US20190273129A1 (en) * 2017-11-28 2019-09-05 SK Hynix Inc. Semiconductor device and method for fabricating the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140183649A1 (en) * 2012-12-28 2014-07-03 SK Hynix Inc. Semiconductor device having metal gate and high-k dielectric layer and method for manufacturing the same
US20190273129A1 (en) * 2017-11-28 2019-09-05 SK Hynix Inc. Semiconductor device and method for fabricating the same

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Publication number Publication date
TW202111862A (en) 2021-03-16

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