TWI800487B - 固體攝像元件及製造方法、以及電子機器 - Google Patents
固體攝像元件及製造方法、以及電子機器 Download PDFInfo
- Publication number
- TWI800487B TWI800487B TW106123940A TW106123940A TWI800487B TW I800487 B TWI800487 B TW I800487B TW 106123940 A TW106123940 A TW 106123940A TW 106123940 A TW106123940 A TW 106123940A TW I800487 B TWI800487 B TW I800487B
- Authority
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- Prior art keywords
- solid
- manufacturing
- state imaging
- electronic device
- imaging device
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Geometry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016176214 | 2016-09-09 | ||
JP??2016-176214 | 2016-09-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201826512A TW201826512A (zh) | 2018-07-16 |
TWI800487B true TWI800487B (zh) | 2023-05-01 |
Family
ID=61562377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106123940A TWI800487B (zh) | 2016-09-09 | 2017-07-18 | 固體攝像元件及製造方法、以及電子機器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190221602A1 (zh) |
JP (2) | JPWO2018047635A1 (zh) |
KR (1) | KR102493216B1 (zh) |
CN (1) | CN109564929A (zh) |
TW (1) | TWI800487B (zh) |
WO (1) | WO2018047635A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018061481A1 (ja) * | 2016-09-30 | 2018-04-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子及び撮像装置 |
JP2020053654A (ja) * | 2018-09-28 | 2020-04-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および製造方法、並びに、電子機器 |
JP2020150037A (ja) * | 2019-03-11 | 2020-09-17 | キオクシア株式会社 | 半導体装置およびその製造方法 |
CN110112168A (zh) * | 2019-06-04 | 2019-08-09 | 德淮半导体有限公司 | 堆叠式图像传感器及其形成方法 |
JP7208941B2 (ja) * | 2020-02-20 | 2023-01-19 | 富士フイルム株式会社 | 放射線検出器、放射線画像撮影装置、及び放射線検出器の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009277732A (ja) * | 2008-05-12 | 2009-11-26 | Sony Corp | 固体撮像装置の製造方法 |
JP2010273757A (ja) * | 2009-05-27 | 2010-12-09 | Zycube:Kk | イメージセンサ応用装置 |
US20110121420A1 (en) * | 2009-11-20 | 2011-05-26 | Hynix Semiconductor Inc. | Reverse image sensor module and method for manufacturing the same |
JP2015126187A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社フジクラ | 半導体パッケージ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7342268B2 (en) * | 2004-12-23 | 2008-03-11 | International Business Machines Corporation | CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom |
JP4799542B2 (ja) | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
JP4799594B2 (ja) * | 2008-08-19 | 2011-10-26 | 株式会社東芝 | 固体撮像装置およびその製造方法 |
US8125042B2 (en) * | 2008-11-13 | 2012-02-28 | Samsung Electronics Co., Ltd. | Semiconductor package and method of manufacturing the same |
US8193555B2 (en) * | 2009-02-11 | 2012-06-05 | Megica Corporation | Image and light sensor chip packages |
US9142586B2 (en) * | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US8431977B2 (en) * | 2010-06-10 | 2013-04-30 | Megica Corporation | Wafer level processing method and structure to manufacture semiconductor chip |
US8659148B2 (en) * | 2010-11-30 | 2014-02-25 | General Electric Company | Tileable sensor array |
JP5826511B2 (ja) * | 2011-04-26 | 2015-12-02 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
DE102012220416A1 (de) * | 2012-11-09 | 2014-05-15 | Siemens Aktiengesellschaft | Fotoempfänger mit einer Vielzahl von Fotozellen und Durchkontaktierungen sowie Verfahren zu dessen Herstellung |
JP2014099436A (ja) * | 2012-11-13 | 2014-05-29 | Renesas Electronics Corp | 半導体集積回路装置 |
KR101439311B1 (ko) * | 2013-07-08 | 2014-09-15 | (주)실리콘화일 | 웨이퍼의 패드 형성 방법 |
-
2017
- 2017-07-18 TW TW106123940A patent/TWI800487B/zh active
- 2017-08-25 WO PCT/JP2017/030463 patent/WO2018047635A1/ja active Application Filing
- 2017-08-25 KR KR1020197005817A patent/KR102493216B1/ko active IP Right Grant
- 2017-08-25 CN CN201780047587.3A patent/CN109564929A/zh active Pending
- 2017-08-25 JP JP2018538352A patent/JPWO2018047635A1/ja active Pending
- 2017-08-25 US US16/329,454 patent/US20190221602A1/en active Pending
-
2022
- 2022-07-07 JP JP2022109699A patent/JP2022132350A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009277732A (ja) * | 2008-05-12 | 2009-11-26 | Sony Corp | 固体撮像装置の製造方法 |
JP2010273757A (ja) * | 2009-05-27 | 2010-12-09 | Zycube:Kk | イメージセンサ応用装置 |
US20110121420A1 (en) * | 2009-11-20 | 2011-05-26 | Hynix Semiconductor Inc. | Reverse image sensor module and method for manufacturing the same |
JP2015126187A (ja) * | 2013-12-27 | 2015-07-06 | 株式会社フジクラ | 半導体パッケージ |
Also Published As
Publication number | Publication date |
---|---|
TW201826512A (zh) | 2018-07-16 |
KR102493216B1 (ko) | 2023-01-30 |
WO2018047635A1 (ja) | 2018-03-15 |
CN109564929A (zh) | 2019-04-02 |
JP2022132350A (ja) | 2022-09-08 |
JPWO2018047635A1 (ja) | 2019-06-24 |
KR20190045187A (ko) | 2019-05-02 |
US20190221602A1 (en) | 2019-07-18 |
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