TWI799893B - 度量衡參數判定及度量衡配方選擇 - Google Patents

度量衡參數判定及度量衡配方選擇 Download PDF

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Publication number
TWI799893B
TWI799893B TW110121915A TW110121915A TWI799893B TW I799893 B TWI799893 B TW I799893B TW 110121915 A TW110121915 A TW 110121915A TW 110121915 A TW110121915 A TW 110121915A TW I799893 B TWI799893 B TW I799893B
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TW
Taiwan
Prior art keywords
metrology
parameter determination
recipe selection
selection
metrology recipe
Prior art date
Application number
TW110121915A
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English (en)
Other versions
TW202212987A (zh
Inventor
納傑思 賈瓦赫里
莫哈瑪德瑞薩 哈吉阿瑪迪
奧格 維克多 茲維爾
岡薩洛 羅伯托 桑吉內蒂
Original Assignee
荷蘭商Asml荷蘭公司
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Application filed by 荷蘭商Asml荷蘭公司 filed Critical 荷蘭商Asml荷蘭公司
Publication of TW202212987A publication Critical patent/TW202212987A/zh
Application granted granted Critical
Publication of TWI799893B publication Critical patent/TWI799893B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0242Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Geometry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
TW110121915A 2017-05-03 2018-04-30 度量衡參數判定及度量衡配方選擇 TWI799893B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762501047P 2017-05-03 2017-05-03
US62/501,047 2017-05-03
EPEP18152479 2018-01-19
EP18152479 2018-01-19

Publications (2)

Publication Number Publication Date
TW202212987A TW202212987A (zh) 2022-04-01
TWI799893B true TWI799893B (zh) 2023-04-21

Family

ID=61899316

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110121915A TWI799893B (zh) 2017-05-03 2018-04-30 度量衡參數判定及度量衡配方選擇
TW107114625A TWI756417B (zh) 2017-05-03 2018-04-30 度量衡參數判定及度量衡配方選擇

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW107114625A TWI756417B (zh) 2017-05-03 2018-04-30 度量衡參數判定及度量衡配方選擇

Country Status (5)

Country Link
JP (1) JP7000454B2 (zh)
KR (1) KR102326192B1 (zh)
CN (1) CN110603490B (zh)
IL (1) IL270315B2 (zh)
TW (2) TWI799893B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
CN113906345A (zh) * 2019-05-03 2022-01-07 Asml荷兰有限公司 基于倾斜拟合技术来确定对准模型的方法
JP7365510B2 (ja) * 2020-01-29 2023-10-19 エーエスエムエル ネザーランズ ビー.ブイ. 基板上の周期構造を測定するための計測方法およびデバイス
CN115777084A (zh) 2020-07-09 2023-03-10 Asml荷兰有限公司 量测方法、设备和计算机程序
US20240036484A1 (en) * 2020-12-08 2024-02-01 Asml Netherlands B.V. Method of metrology and associated apparatuses
CN117516882B (zh) * 2023-11-08 2024-07-02 上海市第一人民医院 便携式视光学棱镜度检测装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050018164A1 (en) * 2003-02-11 2005-01-27 Asml Netherlands B.V. Exposure with intensity balancing to mimic complex illuminator shape
US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7279258B2 (en) * 2004-03-12 2007-10-09 Infineon Technologies Richmond, Lp Method and arrangement for controlling focus parameters of an exposure tool

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7564555B2 (en) 2006-08-15 2009-07-21 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US9223227B2 (en) * 2011-02-11 2015-12-29 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
NL2010988A (en) 2012-07-05 2014-01-07 Asml Netherlands Bv Metrology method and apparatus, lithographic system, device manufacturing method and substrate.
KR101860038B1 (ko) 2013-12-30 2018-05-21 에이에스엠엘 네델란즈 비.브이. 메트롤로지 타겟의 디자인을 위한 방법 및 장치
JP6524256B2 (ja) * 2015-04-21 2019-06-05 エーエスエムエル ネザーランズ ビー.ブイ. メトロロジ方法及び装置、コンピュータプログラム、並びにリソグラフィシステム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050018164A1 (en) * 2003-02-11 2005-01-27 Asml Netherlands B.V. Exposure with intensity balancing to mimic complex illuminator shape
US7180576B2 (en) * 2003-02-11 2007-02-20 Asml Netherlands B.V. Exposure with intensity balancing to mimic complex illuminator shape
US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7279258B2 (en) * 2004-03-12 2007-10-09 Infineon Technologies Richmond, Lp Method and arrangement for controlling focus parameters of an exposure tool

Also Published As

Publication number Publication date
IL270315A (zh) 2019-12-31
TWI756417B (zh) 2022-03-01
KR102326192B1 (ko) 2021-11-15
IL270315B1 (en) 2023-08-01
JP7000454B2 (ja) 2022-02-04
JP2020518848A (ja) 2020-06-25
IL270315B2 (en) 2023-12-01
TW201843534A (zh) 2018-12-16
TW202212987A (zh) 2022-04-01
CN110603490A (zh) 2019-12-20
CN110603490B (zh) 2022-12-30
KR20190142390A (ko) 2019-12-26

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