TWI799766B - Method for manufacturing semiconductor film by using sputtering technology - Google Patents

Method for manufacturing semiconductor film by using sputtering technology Download PDF

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Publication number
TWI799766B
TWI799766B TW109144478A TW109144478A TWI799766B TW I799766 B TWI799766 B TW I799766B TW 109144478 A TW109144478 A TW 109144478A TW 109144478 A TW109144478 A TW 109144478A TW I799766 B TWI799766 B TW I799766B
Authority
TW
Taiwan
Prior art keywords
semiconductor film
manufacturing semiconductor
sputtering technology
sputtering
technology
Prior art date
Application number
TW109144478A
Other languages
Chinese (zh)
Other versions
TW202226347A (en
Inventor
詹世豪
曾少澤
黃耀賢
Original Assignee
進化光學有限公司
黃耀賢
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Publication date
Application filed by 進化光學有限公司, 黃耀賢 filed Critical 進化光學有限公司
Priority to TW109144478A priority Critical patent/TWI799766B/en
Publication of TW202226347A publication Critical patent/TW202226347A/en
Application granted granted Critical
Publication of TWI799766B publication Critical patent/TWI799766B/en

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TW109144478A 2020-12-16 2020-12-16 Method for manufacturing semiconductor film by using sputtering technology TWI799766B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW109144478A TWI799766B (en) 2020-12-16 2020-12-16 Method for manufacturing semiconductor film by using sputtering technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109144478A TWI799766B (en) 2020-12-16 2020-12-16 Method for manufacturing semiconductor film by using sputtering technology

Publications (2)

Publication Number Publication Date
TW202226347A TW202226347A (en) 2022-07-01
TWI799766B true TWI799766B (en) 2023-04-21

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TW109144478A TWI799766B (en) 2020-12-16 2020-12-16 Method for manufacturing semiconductor film by using sputtering technology

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TW (1) TWI799766B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040045810A1 (en) * 2002-09-05 2004-03-11 Plasmion Corporation Apparatus and method of forming thin film from negatively charged sputtered ions
US20050011757A1 (en) * 2003-07-16 2005-01-20 Toshinari Noda Sputtering apparatus
TW200532040A (en) * 2004-03-26 2005-10-01 Applied Films Gmbh & Co Kg Device for reactive sputtering
US20120118726A1 (en) * 2009-11-18 2012-05-17 Idemitsu Kosan Co., Ltc. In-ga-zn-o type sputtering target
US20180044780A1 (en) * 2004-02-22 2018-02-15 Zond, Llc Apparatus and method for sputtering hard coatings

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040045810A1 (en) * 2002-09-05 2004-03-11 Plasmion Corporation Apparatus and method of forming thin film from negatively charged sputtered ions
US20050011757A1 (en) * 2003-07-16 2005-01-20 Toshinari Noda Sputtering apparatus
US20180044780A1 (en) * 2004-02-22 2018-02-15 Zond, Llc Apparatus and method for sputtering hard coatings
TW200532040A (en) * 2004-03-26 2005-10-01 Applied Films Gmbh & Co Kg Device for reactive sputtering
US20120118726A1 (en) * 2009-11-18 2012-05-17 Idemitsu Kosan Co., Ltc. In-ga-zn-o type sputtering target

Also Published As

Publication number Publication date
TW202226347A (en) 2022-07-01

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