TWI798777B - 具非對稱並聯裸晶的金氧半場效電晶體及其實施方法 - Google Patents

具非對稱並聯裸晶的金氧半場效電晶體及其實施方法 Download PDF

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TWI798777B
TWI798777B TW110128603A TW110128603A TWI798777B TW I798777 B TWI798777 B TW I798777B TW 110128603 A TW110128603 A TW 110128603A TW 110128603 A TW110128603 A TW 110128603A TW I798777 B TWI798777 B TW I798777B
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die
load
bare
effect transistor
metal oxide
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TW202308172A (zh
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黃文楠
陳慶國
游智名
孟祥集
賴東明
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博盛半導體股份有限公司
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Priority to CN202111352626.5A priority patent/CN115714523A/zh
Priority to US17/533,965 priority patent/US20230037951A1/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/1566Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with means for compensating against rapid load changes, e.g. with auxiliary current source, with dual mode control or with inductance variation
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0032Control circuits allowing low power mode operation, e.g. in standby mode
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1584Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)

Abstract

本發明揭露一種具非對稱並聯裸晶的金氧半場效電晶體及其實施方法,包含有一電感、一負載辨識控制單元,及具有一第一裸晶、一第二裸晶、與一開關的一金氧半場效電晶體,其中,第一裸晶尺寸大於第二裸晶尺寸;在實施時,電感可在負載變化時產生一電壓訊號,由負載辨識控制單元對開關進行控制,係可在不同負載情況由不同裸晶進行導通,達到能兼顧體積、成本,並有效的在輕載情況下提升效率之功效。

Description

具非對稱並聯裸晶的金氧半場效電晶體及其實施方法
本發明涉及一種金氧半場效電晶體,尤指一種應用於電源轉換,具有非對稱並聯裸晶並可基於負載進行調變的金氧半場效電晶體。
隨著科技發展,人們對電晶體開關的要求也越來越高,除了要求開關體積縮小、降低開關損耗,效率的提升也成了重要的課題,以電池來供應電力的筆記型電腦來說,電腦具有多種不同的電路及負載,如:中央處理器(CPU)、晶片組繪圖處理器(GPU)與記憶體等,係由不同的電壓線路來進行供電,而由於電路負載會隨著操作狀態不同而改變,如在重載切換為輕載時,有時只能達到約10~20%的轉換效率,或在進行輕載時效率不彰,導致了不必要的能源耗損。
關於如何有效提高輕負載效率,已有如中國專利第CN102904424B號揭示一種具有提高輕負載效率的開關調節器,其包含有控制器、多相降壓轉換器、和輔助低功 率相,其中,控制器可控制多相轉換器和輔助相的操作,多相降壓轉換器包括有複數個主相,被配置為將輸入電壓Vdd2轉換成較低電壓,以施加到不同負載狀態下的電子設備,以此將小量輸出電流輸送到輕負載狀態下的電子設備,增加開關調節器在輕負載狀態下的效率;然而,中國案所揭露之技術手段係需具有複數個主項,如此將會使控制開關具有較大的體積及成本,而會面臨無法達到輕量、簡便、低成本的問題,據此,如何能兼顧體積、成本,並有效的在輕載情況下提升效率,此乃待須解決之問題。
有鑒於上述的問題,本發明人係依據多年來從事相關行業的經驗,針對金氧半場效電晶體進行改進;緣此,本發明之主要目的在於提供一種具非對稱並聯裸晶的金氧半場效電晶體,其可依據負載大小調變所導通的裸晶,以此增加在輕載時的效率。
為達上述的目的,本發明之具非對稱並聯裸晶的金氧半場效電晶體,係包含有相互呈電性連接的一金氧半場效電晶體、一負載辨識控制單元、及一電感,其中金氧半場效電晶體具有一第一裸晶、一第二裸晶、及一開關;本發明實施時,電感可因負載變化產生一電壓訊號,負載辨識控制單元基於電壓訊號調控開關,使第一裸晶、或第二裸晶導通,其中,第一裸晶的尺寸大於第二裸晶的尺寸,當 輕載時,金氧半場效電晶體係驅動第二裸晶進行導通,由於第二裸晶為較小的裸晶,可利用較小的閘極驅動電壓進行驅動,進一步降低了具非對稱並聯裸晶的金氧半場效電晶體的驅動損耗及整體功率的損耗,可在兼顧體積、成本的情況下,有效達到的在輕載情況下提升效率之功效。
為使 貴審查委員得以清楚了解本發明之目的、技術特徵及其實施後之功效,茲以下列說明搭配圖示進行說明,敬請參閱。
1:具非對稱並聯裸晶的金氧半場效電晶體
11:金氧半場效電晶體
111:第一裸晶
112:第二裸晶
113:開關
12:負載辨識控制單元
13:電感
S:金氧半場效電晶體之源極
D:金氧半場效電晶體之汲極
S1:第一裸晶之源極
S2:第二裸晶之源極
D1:第一裸晶之汲極
D2:第二裸晶之汲極
G1:第一裸晶之閘極
G2:第二裸晶之閘極
V:電壓訊號
2:負載
第1圖,為本發明之電路方塊示意圖。
第2圖,為本發明之實施示意圖(一)。
第3圖,為本發明之實施示意圖(二)。
第4圖,為本發明之實施示意圖(三)。
第5圖,為本發明之實施例。
第6圖,為本發明之另一實施例。
請參閱「第1圖」,為本發明之電路方塊示意圖,如圖所示,本發明之具非對稱並聯裸晶的金氧半場效電晶體1,包含有一金氧半場效電晶體11、一負載辨識控制單元12、及一電感13,以下對各要件作說明及例示: (1)金氧半場效電晶體11具有一第一裸晶111、一第二裸晶112、及一開關113,其中,第一裸晶111與第二裸晶112相並聯,且第一裸晶111之源極S1與第二裸晶112之源極S2共同形成金氧半場效電晶體11之源極S,第一裸晶111之汲極D1與第二裸晶112之汲極D2共同形成金氧半場效電晶體11之汲極D,所述的第一裸晶111與第二裸晶112為兩個尺寸大小不同之裸晶(die),第一裸晶111為相對第二裸晶112為尺寸較大的裸晶(die),第二裸晶112為相對第一裸晶111尺寸較小的裸晶(die),第二裸晶112相較第一裸晶111係具有體積小、耗能低、較佳的切換效率,在輕負載的情況更可達到無載待機的特性;開關113與第一裸晶111之閘極G1或第二裸晶112之閘極G2呈電性連接,開關113受負載辨識控制單元12調控,可使金氧半場效電晶體11透過第一裸晶111或第二裸晶112進行導通;(2)負載辨識控制單元12(Load recognition control)一端與開關113呈電性連接,另一端與金氧半場效電晶體11之源極S呈電性連接,負載辨識控制單元12供以一電壓訊號控制開關113,並產生裸晶(die)相對應的一閘極驅動電壓,使金氧半場效電晶體11能夠在不同負載的情況下切換開關113,如此便可隨著負載的輕重,選擇透過第一裸晶111或第二裸晶112進行導通,其中,負載辨識控制單元12所實施控制的方式可為一數位訊號或一類比訊號進行判斷; (3)電感13與金氧半場效電晶體11之源極呈電性連接,並與負載辨識控制單元12相並聯,電感13根據法拉第電磁感應定律,基於負載的變化產生一電壓訊號傳送至負載辨識控制單元12,供負載辨識控制單元12進行開關控制。
請參閱「第2圖」,為本發明之實施示意圖(一),如圖所示,本發明之具非對稱並聯裸晶的金氧半場效電晶體1在應用時,電性連接一負載2,負載2與金氧半場效電晶體11之汲極D呈電性連接;根據歐姆定律,通過電感13的電流會隨負載2之大小不同而改變,又,根據電磁感應定律,電感13係由電流的變化感應出一電壓訊號V,負載辨識控制單元12係基於電壓訊號V,控制開關113使第一裸晶111及第二裸晶112分別通路/斷路,可達到根據不同輕重負載,改變具非對稱並聯裸晶的金氧半場效電晶體1之特性。
請參閱「第3圖」,為本發明之實施示意圖(二),如圖所示,本發明之具非對稱並聯裸晶的金氧半場效電晶體1應用於重負載時,係由電感13產生電壓訊號V,負載辨識控制單元12基於電壓訊號V控制開關113,使第一裸晶111之閘極G1形成通路,且負載辨識控制單元12產生閘極驅動電壓,使具非對稱並聯裸晶的金氧半場效電晶體1的第一裸晶111呈通路,第二裸晶112則為斷路;具 非對稱並聯裸晶的金氧半場效電晶體1在重負載時,係通過較大裸晶(die)的第一裸晶111導通,由於在重負載時,整體功率的損耗,導通損耗較驅動損耗來的占比更大,故,利用第一裸晶111進行導通相較利用第二裸晶112,具有較低的功率損耗。
請參閱「第4圖」,為本發明之實施示意圖(三),如圖所示,本發明之具非對稱並聯裸晶的金氧半場效電晶體1應用於輕負載時,係由電感13產生電壓訊號,負載辨識控制單元12基於電壓訊號V控制開關113,使第二裸晶112之閘極G2形成通路,且負載辨識控制單元12產生閘極驅動電壓,使具非對稱並聯裸晶的金氧半場效電晶體1的第二裸晶112呈通路,第一裸晶111則為斷路;具非對稱並聯裸晶的金氧半場效電晶體1在輕負載時,係通過較小裸晶(die)的第二裸晶112導通,由於在輕負載時,整體功率的損耗,驅動損耗較導通損耗來的占比更大,故藉由切換至第二裸晶112,可利用較小的閘極驅動電壓進行驅動,進一步降低了具非對稱並聯裸晶的金氧半場效電晶體1的驅動損耗及整體功率的損耗;此外,更可透過較小裸晶(die)的第二裸晶112實現更佳的效率及無載待機。
請參閱「第5圖」,為本發明之實施例,並請搭配參閱「第1圖」,本發明之具非對稱並聯裸晶的金氧半場效電晶體1可分別在重負載、輕負載時,切換使第一裸晶 111及第二裸晶112分別通路/斷路,係可有效提升整體系統(包含了本發明之具非對稱並聯裸晶的金氧半場效電晶體1及負載)的輕載效率,其中,輕載可以負載為10%以下作為示例,如1%、2%、3%、4%、5%,意及當負載大於10%時為重載,具非對稱並聯裸晶的金氧半場效電晶體1係切換至第一裸晶111進行導通,當負載小於10%時為輕載,具非對稱並聯裸晶的金氧半場效電晶體1係切換至第二裸晶112進行導通,如圖所示,為在輕載情況下(負載小於10%時),未使用本發明及使用本發明之效率比較,當負載為1%時,效率由82.3%提升至84.2%;當負載為2%時,效率由82.7%提升至85.1%;當負載為3%時,效率由83.1%提升至85.6%;當負載為4%時,效率由83.6%提升至86.5%;當負載為5%時,效率由84.5%提升至87.2%;而負載為10%時,效率由87.6%提升至89.1%;由圖可知,在使用本發明後,在各輕載的效率皆具有顯著的提升。
請參閱「第6圖」,為本發明之另一實施例示意圖,本發明之具非對稱並聯裸晶的金氧半場效電晶體1,除了負載辨識控制單元12判斷為重載情況下將開關113切換至較大的第一裸晶111,亦可將開關113連接至第一裸晶111之閘極G1及第二裸晶112閘極G2,使第一裸晶111及第二裸晶112同時導通,由於在重載時,整體功率的損耗中,導通損耗較驅動損耗來的占比更大,藉由並聯的 方式降低導通損耗,係可有效提升具非對稱並聯裸晶的金氧半場效電晶體1在重載時的效率。
本發明之具非對稱並聯裸晶的金氧半場效電晶體1除了具有第一裸晶111、第二裸晶112,更可包含有複數個裸晶,且第一裸晶111、第二裸晶112、及複數個裸晶相並聯,其中,各裸晶係可為各式大小裸晶,特此澄明,負載辨識控制單元12係基於電感13之電壓訊號,對開關113進行控制,使第一裸晶、第二裸晶、及複數個裸晶基於負載分別導通或並聯導通之其中一種或其組合,係可在不同的負載條件下選擇最佳的電路連接方式,以達到效率最優化。
由上所述可知,本發明之具非對稱並聯裸晶的金氧半場效電晶體係包含有具相並聯第一裸晶、第二裸晶、及開關的金氧半場效電晶體,另有一負載辨識控制單元及一電感與金氧半場效電晶體電性連結,電感係可基於負載的變化,產生一電壓訊號,負載辨識控制單元基於電壓訊號控制開關,使第一裸晶、或第二裸晶導通,在判斷為重負載時,由較大的第一裸晶導通、或第一裸晶及第二裸晶同時導通,在判斷為輕負載時,由較小的第二裸晶導通,此外,金氧半場效電晶體更可具有複數個裸晶,透過負載辨識控制單元及開關驅動第一裸晶、第二裸晶、及各複數個裸晶分別導通或並聯導通之其中一種或其 組合;透過本發明具非對稱並聯裸晶的金氧半場效電晶體,係可基於負載狀況,驅動不同的裸晶導通,達到降低體積、成本,並有效的在輕載情況下提升效率之功效。
唯,以上所述者,僅為本發明之較佳之實施例而已,並非用以限定本發明實施之範圍;任何熟習此技藝者,在不脫離本發明之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本發明之專利範圍內。
綜上所述,本發明係具有「產業利用性」、「新穎性」與「進步性」等專利要件;申請人爰依專利法之規定,向 鈞局提起發明專利之申請。
1:具非對稱並聯裸晶的金氧半場效電晶體
11:金氧半場效電晶體
111:第一裸晶
112:第二裸晶
113:開關
12:負載辨識控制單元
13:電感
S:金氧半場效電晶體之源極
D:金氧半場效電晶體之汲極
S1:第一裸晶之源極
S2:第二裸晶之源極
D1:第一裸晶之汲極
D2:第二裸晶之汲極
G1:第一裸晶之閘極
G2:第二裸晶之閘極

Claims (8)

  1. 一種具非對稱並聯裸晶的金氧半場效電晶體,用以依據一負載變化進行調變,以提升電源轉換效率,包含:一金氧半場效電晶體,包含有一第一裸晶、一第二裸晶、及一開關,該第一裸晶的尺寸大於該第二裸晶的尺寸,且該第一裸晶與該第二裸晶相並聯,該開關與該第一裸晶之一閘極或該第二裸晶之一閘極呈電性連接,使該第一裸晶或該第二裸晶導通;一負載辨識控制單元,一端與該開關呈電性連接,另一端與該第一裸晶之一源極及該第二裸晶之一源極呈電性連接,且以一電壓訊號控制該開關,並產生一閘極驅動電壓;以及一電感,與該金氧半場效電晶體之一源極呈電性連接,並與該負載辨識控制單元相並聯,該電感基於該負載變化產生該電壓訊號。
  2. 如請求項1所述之具非對稱並聯裸晶的金氧半場效電晶體,其中,該負載辨識控制單元以一數位訊號或一類比訊號對該開關進行控制。
  3. 如請求項1所述之具非對稱並聯裸晶的金氧半場效電晶體,其中,該開關供以同時導通該第一裸晶及該第二裸晶。
  4. 如請求項1所述之具非對稱並聯裸晶的金氧半場效電晶體,其中,更包含有複數個裸晶,該複數個裸晶與該第一裸晶、及該第二裸晶相並聯,該負載辨識控制單元基於該電壓訊號,對該開關進行控制,使該第一裸晶、該第二裸晶、或該複數個裸晶分別導通或並聯導通之其中一種或其組合。
  5. 一種具非對稱並聯裸晶的金氧半場效電晶體的實施方法,係依據一負載變化進行調變,以提升電源轉換效率,包含:一電感基於該負載變化產生一電壓訊號,一負載辨識控制單元基於該電壓訊號控制一開關;當該負載為重負載時,一金氧半場效電晶體透過一第一裸晶進行導通;以及當該負載為輕負載時,該金氧半場效電晶體透過一第二裸晶進行導通。
  6. 如請求項5所述之具非對稱並聯裸晶的金氧半場效電晶體的實施方法,其中,該負載辨識控制單元以一數位訊號或一類比訊號對該開關進行控制。
  7. 如請求項5所述之具非對稱並聯裸晶的金氧半場效電晶體的實施方法,其中,當重載時,該開關同時導通該第一裸晶及該第二裸晶。
  8. 如請求項5所述之具非對稱並聯裸晶的金氧半場效電晶體的實施方法,其中,該負載辨識控制單元基於該電壓訊號控制該開關,使該第一裸晶、該第二裸晶、或複數個裸晶基於該電壓訊號分別導通或並聯導通之其中一種或其組合。
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TWM503025U (zh) * 2015-01-30 2015-06-11 Anwell Semiconductor Corp 具較低總諧波失真率之電源電路

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