TWI798699B - Silicon oxide preparation device - Google Patents

Silicon oxide preparation device Download PDF

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TWI798699B
TWI798699B TW110118078A TW110118078A TWI798699B TW I798699 B TWI798699 B TW I798699B TW 110118078 A TW110118078 A TW 110118078A TW 110118078 A TW110118078 A TW 110118078A TW I798699 B TWI798699 B TW I798699B
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silicon oxide
precipitation
box
heat insulating
partition
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TW110118078A
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Chinese (zh)
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TW202247509A (en
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林煌偉
楊瑜民
許松林
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中美矽晶製品股份有限公司
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Priority to TW110118078A priority Critical patent/TWI798699B/en
Priority to CN202210124601.8A priority patent/CN115364509A/en
Priority to JP2022044367A priority patent/JP7361825B2/en
Publication of TW202247509A publication Critical patent/TW202247509A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D7/00—Sublimation
    • B01D7/02—Crystallisation directly from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/483—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides for non-aqueous cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/027—Negative electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Abstract

A silicon oxide preparation device includes a heating furnace, a heating device, a crucible, a precipitation box, an exhaust duct, and an exhaust device. The heating furnace has a heating furnace cavity surrounded by an insulating material; the heating device, the crucible and the precipitation box are arranged in the heating furnace cavity; the precipitation box has an air inlet and an air outlet, the precipitation box includes at least one partition plate and is arranged in the internal space of the precipitation box. The at least one partition and the inner wall of the precipitation box form at least one channel, the at least one channel respectively communicates with the air inlet and the air outlet; the exhaust duct has a first end and a second end, the first end is disposed adjacent to the upper opening of the crucible, the second end communicates with the gas inlet of the precipitation box; the air extraction device communicates with the gas outlet of the precipitation box.

Description

矽氧化物之製備裝置Preparation device of silicon oxide

本發明係與矽氧化物製備裝置有關；特別是指一種能提升矽氧化物產量之矽氧化物之製備裝置。The present invention is related to a silicon oxide preparation device; in particular, it refers to a silicon oxide preparation device that can increase the production of silicon oxide.

已知，二次電池有鎳鎘電池、鎳氫電池、鋰離子二次電池等，而鋰離子二次電池與鎳鎘電池或鎳氫電池相比，具有能量密度高、工作電壓高、記憶效應小以及可快速充電等特性，因此廣泛的被運用於例如平板電腦、智慧型手機、筆記型電腦、遊戲主機等電子裝置中。It is known that secondary batteries include nickel-cadmium batteries, nickel-hydrogen batteries, and lithium-ion secondary batteries. Compared with nickel-cadmium batteries or nickel-hydrogen batteries, lithium-ion secondary batteries have high energy density, high operating voltage, and memory effect. Due to its small size and fast charging characteristics, it is widely used in electronic devices such as tablet computers, smart phones, notebook computers, and game consoles.

鋰離子二次電池內部的反應主要是透過鋰離子於正極與負極之間往復移動以製造正極和負極之間的電位差，一般的鋰離子二次電池多以石墨為負極材料，而使用此種負極材料之鋰離子二次電池的能源密度很低，因此，為了提高能源密度，業界開發了多種新的負極材料，其中使用氧化矽作為鋰離子二次電池負極材料能獲得高電壓、 高能量密度之鋰離子二次電池。The reaction inside the lithium ion secondary battery is mainly through the reciprocating movement of lithium ions between the positive electrode and the negative electrode to create a potential difference between the positive electrode and the negative electrode. The general lithium ion secondary battery mostly uses graphite as the negative electrode material, and this negative electrode is used The energy density of lithium-ion secondary batteries is very low. Therefore, in order to increase energy density, the industry has developed a variety of new negative electrode materials. Among them, silicon oxide can be used as the negative electrode material of lithium-ion secondary batteries to obtain high voltage and high energy density. Lithium-ion secondary battery.

習用之用於製備鋰二次電池之負極材料的矽氧化物製備裝置通常包含一原料容器、一加熱裝置、一析出室及一抽氣裝置，透過將含有氧化矽之粉末設置於該原料容器中並加熱氣化後，再藉由該抽氣裝置將氧化矽氣體抽離並使其流經該析出室，以析出固態氧化矽於該析出室之內壁，但習用矽氧化物製備裝置之抽氣裝置容易將氧化矽氣體快速抽離該析出室，而使得該析出室收集之析出矽氧化物產量不佳，因此，習用之矽氧化物製備裝置於結構設計上仍未臻完善，且尚有待改進之處。The conventional silicon oxide preparation device used to prepare negative electrode materials for lithium secondary batteries usually includes a raw material container, a heating device, a precipitation chamber and an air extraction device, by placing the powder containing silicon oxide in the raw material container And after heating and vaporizing, the silicon oxide gas is extracted by the pumping device and made to flow through the precipitation chamber to deposit solid silicon oxide on the inner wall of the precipitation chamber. The silicon oxide gas device is easy to quickly extract the silicon oxide gas out of the precipitation chamber, so that the yield of the precipitated silicon oxide collected in the precipitation chamber is not good. Therefore, the structural design of the conventional silicon oxide preparation device is still not perfect, and there is still room for improvement. Improvements.

有鑑於此，本發明之目的在於提供一種矽氧化物之製備裝置，能提升矽氧化物產量。In view of this, the purpose of the present invention is to provide a silicon oxide preparation device, which can increase the output of silicon oxide.

緣以達成上述目的，本發明提供的一種矽氧化物之製備裝置包括有一加熱爐、一加熱裝置、一坩堝、一析出盒、一排氣管道及一抽氣裝置，該加熱爐內部具有由一隔熱材料圍設形成之一加熱爐腔；該加熱裝置設置於該加熱爐腔中；該坩堝設置於該加熱爐腔中，用以容置一固態原料，該固態原料包括二氧化矽及矽，該加熱裝置對該坩堝加熱使該固態原料形成一氣態矽氧化物；該坩堝具有一上開口；該析出盒設置於該加熱爐腔中，該析出盒具有一入氣口及一出氣口，該析出盒包含至少一隔板並設置於該析出盒之內部空間中，該至少一隔板與該析出盒之內壁形成至少一通道，該至少一通道分別連通該入氣口及該出氣口；該排氣管道具有一第一端及一第二端，該第一端設置於鄰近該坩堝的該上開口的位置，該第二端與該析出盒之該入氣口連通；該抽氣裝置與該析出盒之該出氣口連通；該抽氣裝置將該氣態矽氧化物抽離該坩堝，以使該氣態矽氧化物與該析出盒之內壁及該至少一隔板之表面接觸以析出一固態之矽氧化物。In order to achieve the above object, the preparation device of a kind of silicon oxide provided by the present invention comprises a heating furnace, a heating device, a crucible, a separation box, an exhaust pipe and an exhaust device, and the heating furnace is equipped with a A heating furnace cavity is formed by insulating material; the heating device is disposed in the heating furnace cavity; the crucible is disposed in the heating furnace cavity to accommodate a solid raw material, the solid raw material includes silicon dioxide and silicon , the heating device heats the crucible to form a gaseous silicon oxide from the solid raw material; the crucible has an upper opening; the precipitation box is arranged in the heating furnace cavity, the precipitation box has a gas inlet and a gas outlet, the The separation box includes at least one partition and is arranged in the inner space of the separation box, the at least one partition and the inner wall of the separation box form at least one channel, and the at least one channel communicates with the gas inlet and the gas outlet respectively; The exhaust pipe has a first end and a second end, the first end is arranged adjacent to the upper opening of the crucible, the second end communicates with the gas inlet of the precipitation box; the air extraction device is connected to the The gas outlet of the precipitation box is communicated; the gas extraction device draws the gaseous silicon oxide out of the crucible, so that the gaseous silicon oxide is in contact with the inner wall of the precipitation box and the surface of the at least one partition to precipitate a solid silicon oxide.

本發明之效果在於，藉由該至少一隔板之設置，以增加氣態矽氧化物之接觸面積並延長氣態矽氧化物之氣流路徑，進而提升氧化矽析出的產量。The effect of the present invention is that the contact area of the gaseous silicon oxide is increased and the gas flow path of the gaseous silicon oxide is increased by the arrangement of the at least one partition, thereby increasing the yield of silicon oxide precipitation.

為能更清楚地說明本發明，茲舉較佳實施例並配合圖式詳細說明如後。請參圖1至圖3A、3B所示，為本發明一較佳實施例之矽氧化物之製備裝置1，該矽氧化物之製備裝置1包含一加熱爐10、一載台20、一加熱裝置、一坩堝40、一析出盒50、一排氣管道60及一抽氣裝置70。In order to illustrate the present invention more clearly, preferred embodiments are given and detailed descriptions are given below in conjunction with drawings. Please refer to FIG. 1 to FIG. 3A and 3B, which is a silicon oxide preparation device 1 according to a preferred embodiment of the present invention. The silicon oxide preparation device 1 includes a heating furnace 10, a stage 20, a heating device, a crucible 40, a precipitation box 50, an exhaust pipe 60 and an exhaust device 70.

該加熱爐10內部具有由隔熱材料12圍設形成之一加熱爐腔R，該載台20、該加熱裝置及該坩堝40設置於該加熱爐腔R中，該坩堝40設置於該載台20上，該坩堝40具有一上開口40a，該坩堝係用以容置一固態原料，該固態原料包括二氧化矽及矽，該加熱裝置包含有複數個加熱器30，分別設置於圍繞該坩堝40之外側壁以及該坩堝40上方的位置，該加熱裝置係用於對該坩堝40加熱使該固態原料形成一氣態矽氧化物，於本實施例中，該加熱裝置能使該加熱爐腔R之內部溫度維持於1300至1350度之間。The inside of the heating furnace 10 has a heating chamber R surrounded by a heat insulating material 12, the carrier 20, the heating device and the crucible 40 are arranged in the heating chamber R, and the crucible 40 is arranged on the carrier 20, the crucible 40 has an upper opening 40a, the crucible is used to accommodate a solid raw material, the solid raw material includes silicon dioxide and silicon, the heating device includes a plurality of heaters 30, respectively arranged around the crucible 40 outside the side wall and the position above the crucible 40, the heating device is used to heat the crucible 40 to make the solid material form a gaseous silicon oxide, in this embodiment, the heating device can make the heating chamber R The internal temperature is maintained between 1300 and 1350 degrees.

該析出盒50設置於該加熱爐腔R與該加熱爐10之內爐壁10a之間，並將該析出盒50設置於靠近該加熱裝置的位置，透過調整該析出盒50與該加熱裝置之距離以控制該析出盒50之溫度維持於200至600度之間，由於本案係透過調整該析出盒50與該加熱裝置之距離以控制該析出盒50之溫度，因此不須額外設置例如水冷裝置等降溫裝置，藉此以有效降低生產成本。該析出盒50具有一入氣口50a及一出氣口50b，該析出盒50包含複數個隔板設置於該析出盒50之內部空間中，該些隔板包含複數個橫向隔板80，且該些橫向隔板80與該入氣口50a及該出氣口50b之間的一軸線X相交，該些橫向隔板80與該析出盒50之內壁形成一通道C，該通道C分別連通該入氣口50a及該出氣口50b，且該通道C之總長度大於該入氣口50a與該出氣口50b之間的一最小距離。於本實施例中，該些隔板之熱傳導係數大於或等於16W/m.K，熔點大於1200度，舉例來說，該些隔板可以是由不鏽鋼或石墨的材製製成，但不以此為限。此外，於本實施例中，該通道C之數量是以一個為例說明，於其他實施例中，能藉由該些隔板80之設置位置而形成有一個以上的通道。The separation box 50 is arranged between the heating chamber R and the inner furnace wall 10a of the heating furnace 10, and the separation box 50 is arranged at a position close to the heating device. By adjusting the distance between the separation box 50 and the heating device Distance to control the temperature of the separation box 50 to maintain between 200 and 600 degrees, because this case is to control the temperature of the separation box 50 by adjusting the distance between the separation box 50 and the heating device, so no additional installation such as water cooling device is required And other cooling devices, thereby effectively reducing production costs. The separation box 50 has an air inlet 50a and an air outlet 50b. The separation box 50 includes a plurality of partitions arranged in the inner space of the separation box 50. These partitions include a plurality of transverse partitions 80, and these The transverse partitions 80 intersect with an axis X between the gas inlet 50a and the gas outlet 50b, and these transverse partitions 80 form a channel C with the inner wall of the precipitation box 50, and the channels C respectively communicate with the gas inlet 50a and the air outlet 50b, and the total length of the channel C is greater than a minimum distance between the air inlet 50a and the air outlet 50b. In this embodiment, the thermal conductivity of these partitions is greater than or equal to 16W/m.K, and the melting point is greater than 1200 degrees. For example, these partitions can be made of stainless steel or graphite, but this is not a limitation. limit. In addition, in this embodiment, the number of the channel C is illustrated as one, and in other embodiments, more than one channel can be formed by the positions of the partitions 80 .

除此之外，於本實施例中，該析出盒50為一六面體，其長、寬尺寸分別為350、300mm，該析出盒50之高度H為350mm，該析出盒50之高度H是該析出盒50於遠離該加熱爐腔R之方向上的高度，其中，該析出盒50之高度H選用350mm是為了使該析出盒50之溫度能維持於200至600度之間，除此之外，於其他實施例中，使用者能視情況增加該析出盒50之長、寬尺寸，例如該析出盒50之長、寬尺寸能分別增加至600mm以增加與氣態矽氧化物之接觸面積，進而提升析出之固態矽氧化物S的產量。再說明的是，請配合圖3A及圖3B，於本實施例中，該析出盒50包含一盒體52及一盒蓋54，該盒體52具有一左側板521、一右側板522、一頂板523、一底板524及一側開口525，該頂板523具有該出氣口50b，該底板524具有該入氣口50a，該盒蓋54用以封閉該側開口525，該些橫向隔板80彼此大致平行的分別連接於該盒體52內壁及該盒蓋54上，其中連接於該盒體52內壁之橫向隔板80中之一者是以連接於該左側板521並與該右側板522保持一間距的方式設置，連接於該盒體52內壁之橫向隔板80中之另一者是以連接於該右側板522並與該左側板521保持一間距的方式設置，當該盒蓋54封閉該側開口525時，連接於該盒體52內壁之橫向隔板80與連接於該盒蓋54上之橫向隔板80彼此交錯排列，且如圖3A所示，連接於該盒體52內壁之橫向隔板80分別與該左側板521及右側板522間具有一第一距離D1，以及連接於該盒體52內壁之橫向隔板80與該頂板523間具有一第一間距H1，其中該第一距離D1可以是15mm至25mm之間，該第一間距H1可以是20mm至50mm之間。透過上述之橫向隔板80的設置方式不僅能延長該通道C之長度，透過該些橫向隔板80交錯設置於該盒體52及該盒蓋54的設計，能利於使用者將產出之固態之矽氧化物取出，除此之外，於本實施例中，該第一距離D1選用15mm至25mm之間是因為當該第一距離D1大於25mm時，該盒體52內氣體流動速度較快，反應時間較少，容易造成矽氧化物產出率下降，而當該第一距離D1小於15mm時，容易因為該橫向隔板80與該左側板521或右側板522間產出之矽氧化物堵塞該通道C而導致產出率下降；而該第一間距H1選用20mm至50mm之間，具有利於使用者取出固態矽氧化物之功效。In addition, in this embodiment, the separation box 50 is a hexahedron, its length and width are 350 and 300 mm respectively, the height H of the separation box 50 is 350 mm, and the height H of the separation box 50 is The height of the separation box 50 in the direction away from the heating furnace chamber R, wherein the height H of the separation box 50 is selected to be 350mm is for the temperature of the separation box 50 to be maintained between 200 and 600 degrees. In addition, in other embodiments, the user can increase the length and width of the precipitation box 50 according to the situation. For example, the length and width of the precipitation box 50 can be increased to 600 mm to increase the contact area with the gaseous silicon oxide. Further, the yield of the precipitated solid silicon oxide S is increased. To illustrate again, please cooperate with Fig. 3A and Fig. 3B, in this embodiment, the separation box 50 includes a box body 52 and a box cover 54, and the box body 52 has a left side plate 521, a right side plate 522, a Top plate 523, a bottom plate 524 and a side opening 525, the top plate 523 has the air outlet 50b, the bottom plate 524 has the air inlet 50a, the box cover 54 is used to close the side opening 525, these transverse partitions 80 are approximately Parallel are respectively connected on the box body 52 inner wall and the box cover 54, wherein one of the transverse partitions 80 connected to the box body 52 inner wall is to be connected to the left side plate 521 and to the right side plate 522 The other one of the transverse partitions 80 connected to the inner wall of the box body 52 is arranged to be connected to the right side plate 522 and kept a distance from the left side plate 521. When the box cover 54 when closing the side opening 525, the transverse partition 80 connected to the inner wall of the box body 52 and the transverse partition 80 connected to the box cover 54 are alternately arranged, and as shown in Figure 3A, connected to the box body There is a first distance D1 between the transverse partition 80 of the inner wall of the box body 52 and the left side plate 521 and the right side plate 522 respectively, and a first distance between the transverse partition 80 connected to the inner wall of the box body 52 and the top plate 523 H1, wherein the first distance D1 may be between 15mm and 25mm, and the first distance H1 may be between 20mm and 50mm. The arrangement of the above-mentioned transverse partitions 80 can not only prolong the length of the channel C, but also the design of these transverse partitions 80 staggeredly arranged on the box body 52 and the box cover 54 can facilitate the user to output solid In addition, in this embodiment, the first distance D1 is selected between 15mm and 25mm because when the first distance D1 is greater than 25mm, the gas flow rate in the box body 52 is faster , the reaction time is short, which will easily cause the yield of silicon oxide to decrease, and when the first distance D1 is less than 15 mm, it is easy to cause the silicon oxide produced between the transverse partition 80 and the left side plate 521 or the right side plate 522 Blocking the channel C leads to a decrease in yield; and the first distance H1 is selected between 20 mm and 50 mm, which is beneficial for users to take out solid silicon oxide.

請配合圖1，該排氣管道60具有一第一端60a及一第二端60b，該第一端60a設置於鄰近該坩堝40的該上開口40a的位置，該第二端60b與該析出盒50之該入氣口50a連通，該抽氣裝置70則與該析出盒50之該出氣口50b連通，藉此，該抽氣裝置70將該氣態矽氧化物抽離該坩堝40，以使該氣態矽氧化物與該析出盒50之內壁及該些橫向隔板80之表面接觸以析出如圖3A所示之固態之矽氧化物S，並藉由該些橫向隔板80之設置，增加與氣態矽氧化物之接觸面積並延長氣態矽氧化物之氣流流動路徑，進而提升固態矽氧化物S析出的產量。於本實施例中，該抽氣裝置是以一旋風集塵器為例說明，透過該旋風集塵器可以使氣態矽氧化物於該旋風集塵器析出，藉此提高提升固態矽氧化物之收集率。Please cooperate with FIG. 1, the exhaust pipe 60 has a first end 60a and a second end 60b, the first end 60a is disposed adjacent to the upper opening 40a of the crucible 40, the second end 60b is connected to the precipitate The gas inlet 50a of the box 50 is communicated, and the gas extraction device 70 is communicated with the gas outlet 50b of the precipitation box 50, whereby the gas extraction device 70 is used to extract the gaseous silicon oxide from the crucible 40, so that the The gaseous silicon oxide is in contact with the inner wall of the precipitation box 50 and the surfaces of these horizontal partitions 80 to precipitate solid silicon oxide S as shown in Figure 3A, and by the setting of these horizontal partitions 80, the increase The contact area with gaseous silicon oxide and the gas flow path of gaseous silicon oxide are extended, thereby increasing the yield of solid silicon oxide S precipitation. In this embodiment, the air extraction device is illustrated with a cyclone dust collector as an example, through which gaseous silicon oxide can be precipitated in the cyclone dust collector, thereby increasing the concentration of solid silicon oxide. collection rate.

請配合圖2，再說明的是，於本實施例中，該矽氧化物之製備裝置1包含一遮罩90，該遮罩90覆蓋該坩堝40之該上開口40a，且該遮罩90具有一開孔90a，該開孔90a連通該排氣管道60之該第一端60a及該坩堝40之內部，藉由該遮罩90之設置能限制氣態矽氧化物之流動區域，進而提升固態矽氧化物S之收集率。Please cooperate with FIG. 2 to illustrate that, in this embodiment, the silicon oxide preparation device 1 includes a mask 90, the mask 90 covers the upper opening 40a of the crucible 40, and the mask 90 has An opening 90a, the opening 90a communicates with the first end 60a of the exhaust pipe 60 and the inside of the crucible 40, the flow area of the gaseous silicon oxide can be restricted by the setting of the mask 90, and then the solid silicon oxide can be improved. The collection rate of oxide S.

值得一提的是，於本實施例中，隔板的數量是以複數個為例說明，然而，於實務上，隔板的數量也可以如圖4是一個橫向隔板80設置於該析出盒50之內部空間中，且該橫向隔板80連接於該右側板522，該橫向隔板80與該左側板521間具有一第二距離D2，該橫向隔板80頂部與該頂板523具有一第二間距H2，該橫向隔板80底部與該底板524具有一第三間距H3，並且與該入氣口50a及該出氣口50b之間的該軸線X相交，一樣能達成增加與氣態矽氧化物之接觸面積並延長氣態矽氧化物之氣流流動路徑之效果。其中該第二距離D2可以是15mm至25mm之間，該第二間距H2可以是20mm至110mm之間，該第三間距H3可以是240mm至330mm之間。於本實施例中，該第二距離D2選用15mm至25mm之間是因為當該第二距離D2大於25mm時，該盒體52內氣體流動速度較快，反應時間較少，容易造成矽氧化物產出率下降，而當該第二距離D2小於15mm時，容易因為該橫向隔板80與該左側板521間產出之矽氧化物堵塞該通道C而導致產出率下降；除此之外，該第二間距H2選用20mm至110mm之間以及該第三間距H3選用240mm至330mm之間，是為了使該第二間距H2與該第三間距H3之比率介於1: 2.3~1:16.5之間，使用者能透過調整該第二間距H2與該第三間距H3之比率而得到不同產出率及固態矽氧化物之含氧量，即SiOx之x值，當該第二間距H2占比較小時，能達成增加與氣態矽氧化物之接觸面積之功效，進而能提高固態矽氧化物之產出率並得到x值分布較廣之固態矽氧化物產物，反之當該第二間距H2占比較大時，能得到x值分布較集中之固態矽氧化物產物。It is worth mentioning that, in this embodiment, the number of partitions is described as a plurality of them. However, in practice, the number of partitions can also be set as a horizontal partition 80 in the separation box as shown in FIG. 4 50, and the transverse partition 80 is connected to the right side plate 522, there is a second distance D2 between the transverse partition 80 and the left side plate 521, the top of the transverse partition 80 and the top plate 523 have a first Two intervals H2, the bottom of the transverse partition 80 and the bottom plate 524 have a third interval H3, and intersect the axis X between the gas inlet 50a and the gas outlet 50b, which can also increase the gap between the gaseous silicon oxide and the gaseous silicon oxide. The contact area and the effect of extending the gas flow path of gaseous silicon oxide. Wherein the second distance D2 may be between 15 mm and 25 mm, the second distance H2 may be between 20 mm and 110 mm, and the third distance H3 may be between 240 mm and 330 mm. In this embodiment, the second distance D2 is selected between 15mm and 25mm because when the second distance D2 is greater than 25mm, the gas flow rate in the box body 52 is faster, the reaction time is shorter, and it is easy to cause silicon oxide The output rate decreases, and when the second distance D2 is less than 15mm, it is easy to cause the output rate to decrease because the silicon oxide produced between the horizontal partition 80 and the left side plate 521 blocks the channel C; in addition , the second spacing H2 is selected between 20mm and 110mm and the third spacing H3 is selected between 240mm and 330mm, so that the ratio of the second spacing H2 to the third spacing H3 is between 1: 2.3~1:16.5 Between, the user can obtain different output rates and the oxygen content of solid silicon oxide by adjusting the ratio of the second spacing H2 to the third spacing H3, that is, the x value of SiOx. When the second spacing H2 occupies If it is relatively small, the effect of increasing the contact area with the gaseous silicon oxide can be achieved, thereby improving the yield of solid silicon oxide and obtaining solid silicon oxide products with a wider distribution of x values. On the contrary, when the second distance H2 occupies When it is relatively large, solid silicon oxide products with a concentrated distribution of x values can be obtained.

此外，隔板之設置方式也可以是如圖5所示，隔板包含兩個縱向隔板82及一個橫向隔板80，且兩個縱向隔板82與一個橫向隔板80連接，該些縱向隔板82之一端分別連接於該橫向隔板80之板面，該些縱向隔板82之另一端往該析出盒50之該入氣口50a的方向延伸並垂直於該橫向隔板80之板面設置，且該橫向隔板80連接於該右側板522，該橫向隔板80與該左側板521間具有一第三距離D3，該橫向隔板80頂部與該頂板523具有一第三間距H3，兩個縱向隔板82中較接近該左側板521之縱向隔板82a與該左側板521間具有一第四距離D4且與該底板524間具有一第四間距H4，以及兩個縱向隔板82間具有一第五距離D5，兩個縱向隔板82中較接近該右側板522之縱向隔板82b與該右側板522間具有一第六距離D6且與該底板524間具有一第五間距H5，其中該第三距離D3可以是15mm至25mm之間，該第三間距H3可以是20mm至110mm之間，該第四間距H4及該第五間距H5分別可以是100mm至190mm之間，該第四距離D4為60mm，該第五距離D5為115mm，該第六距離D6為175mm，藉此，以大幅提升固態矽氧化物S析出的產量，其中，縱向隔板82之數量可以是一個或是兩個以上，縱向隔板82與橫向隔板80之板面也可以是非垂直設置。於本實施例中，該第三距離D3選用15mm至25mm之間是因為當該第三距離D3大於25mm時，該盒體52內氣體流動速度較快，反應時間較少，容易造成矽氧化物產出率下降，而當該第三距離D3小於15mm時，容易因為該橫向隔板80與該左側板521間產出之矽氧化物堵塞該通道C而導致產出率下降；該第四間距H4選用100mm至190mm之間是為了使縱向隔板82a與該底板524間維持適當距離，使該盒體50內之氣體能順暢的流通，而該第五間距H5選用100mm至190mm之間是因為該縱向隔板82b設置於接近該入氣口50a且通過該軸線X的位置，因此，固態矽氧化物會集中生成於縱向隔板82b，當該第五間距H5也就是該縱向隔板82b與該入氣口50a間之最小距離小於100mm時，容易因為該縱向隔板82與該底板524間產出之矽氧化物堵塞該通道C而導致產出率下降，除此之外，當該第四間距H4及該第五間距H5大於190mm會間接導致縱向隔板82之表面積下降，進而使得矽氧化物產出率下降。In addition, the arrangement of the partitions can also be as shown in Figure 5, the partitions include two longitudinal partitions 82 and a transverse partition 80, and the two longitudinal partitions 82 are connected with one transverse partition 80, these longitudinal partitions One end of partition plate 82 is connected to the plate surface of this transverse partition plate 80 respectively, and the other end of these vertical partition plates 82 extends toward the direction of this air inlet 50a of this separation box 50 and is perpendicular to the plate surface of this transverse partition plate 80 Set, and the transverse partition 80 is connected to the right side plate 522, there is a third distance D3 between the transverse partition 80 and the left side plate 521, the top of the transverse partition 80 and the top plate 523 have a third distance H3, Among the two longitudinal partitions 82, the longitudinal partition 82a closer to the left side plate 521 has a fourth distance D4 from the left side plate 521 and a fourth distance H4 from the bottom plate 524, and the two vertical partitions 82 There is a fifth distance D5 between them, the longitudinal partition 82b of the two longitudinal partitions 82 that is closer to the right side panel 522 has a sixth distance D6 from the right side panel 522 and a fifth distance H5 from the bottom panel 524 , wherein the third distance D3 can be between 15mm and 25mm, the third distance H3 can be between 20mm and 110mm, the fourth distance H4 and the fifth distance H5 can be between 100mm and 190mm respectively, and the first The fourth distance D4 is 60mm, the fifth distance D5 is 115mm, and the sixth distance D6 is 175mm, thereby greatly improving the yield of solid silicon oxide S precipitation, wherein the number of vertical partitions 82 can be one or More than two, the board surfaces of the longitudinal partitions 82 and the transverse partitions 80 can also be arranged non-perpendicularly. In this embodiment, the third distance D3 is selected between 15mm and 25mm because when the third distance D3 is greater than 25mm, the gas flow rate in the box body 52 is faster, the reaction time is shorter, and it is easy to cause silicon oxide The output rate decreases, and when the third distance D3 is less than 15mm, it is easy to cause the output rate to decrease because the silicon oxide produced between the horizontal partition 80 and the left side plate 521 blocks the channel C; the fourth distance H4 is selected between 100mm and 190mm in order to maintain an appropriate distance between the longitudinal partition 82a and the bottom plate 524, so that the gas in the box body 50 can flow smoothly, and the fifth distance H5 is selected between 100mm and 190mm because The vertical partition 82b is arranged at a position close to the gas inlet 50a and passing through the axis X. Therefore, solid silicon oxide will be concentrated on the vertical partition 82b. When the fifth distance H5 is between the vertical partition 82b and the When the minimum distance between the air inlets 50a is less than 100mm, it is easy to cause the output rate to drop because the silicon oxide produced between the vertical partition 82 and the bottom plate 524 blocks the channel C. In addition, when the fourth distance If the H4 and the fifth distance H5 are greater than 190 mm, the surface area of the vertical partition 82 will be reduced indirectly, thereby reducing the yield of silicon oxide.

續請參閱下列表1，為未設置隔板以及選用如圖3A至圖5所示之不同的隔板設置方式所得到矽氧化物的產出率列表，所述產出率是根據該固態矽氧化物S產出量與所投入之該固態原料之重量比率計算所得，根據表1所示，可知使用如圖5設置兩個縱向隔板及一個橫向隔板所示之隔板的設置方式，能大幅增加隔板與氣態矽氧化物之接觸面積，進而得到較高矽氧化物產出率。Please refer to Table 1 below, which is a list of the yields of silicon oxides obtained by using different barrier arrangements as shown in Figure 3A to Figure 5, and the yield rate is based on the solid silicon The weight ratio of the output of oxide S to the input solid raw material is calculated. According to Table 1, it can be seen that the arrangement of the partitions shown in Figure 5 with two vertical partitions and one horizontal partition is used. It can greatly increase the contact area between the separator and the gaseous silicon oxide, thereby obtaining a higher yield of silicon oxide.

表1 隔板之 設置方式 未設置隔板 設置複數個橫向隔板 （參照圖3A） 設置一個橫向隔板 （參照圖4） 設置兩個縱向隔板及一個橫向隔板 （參照圖5） 析出盒之沉積面積(cm 2) 57 2556 4109 7109 產出率(%) 3.9 6.3 39.2 79.4 Table 1 The setting method of the partition no divider Set up a plurality of horizontal partitions (refer to Figure 3A) Set up a transverse partition (refer to Figure 4) Set up two vertical partitions and one horizontal partition (refer to Figure 5) Deposition area of precipitation box (cm 2 ) 57 2556 4109 7109 Output rate (%) 3.9 6.3 39.2 79.4

請再配合圖1，該矽氧化物之製備裝置1包含一隔熱件100設置於該析出盒50之外壁，該隔熱件100之熱傳導係數介於0.13~0.5 W/m.K，較佳為小於0.24 W/m.K，厚度介於5~80mm之間，該隔熱件100可以是由碳纖或其他隔熱材料製成，透過該隔熱件100之設置能使該析出盒50穩定維持200至600度之間的溫度。Please refer to Fig. 1 again, the silicon oxide preparation device 1 includes a heat insulating element 100 arranged on the outer wall of the precipitation box 50, the thermal conductivity of the heat insulating element 100 is between 0.13~0.5 W/m.K, preferably less than 0.24 W/m.K, the thickness is between 5~80mm, the heat insulation element 100 can be made of carbon fiber or other heat insulation materials, through the setting of the heat insulation element 100, the precipitation box 50 can be stably maintained at 200 to 600 temperature between degrees.

於本實施例中該隔熱件100是以一個為例說明，於其他實施例中，該隔熱件100之數量也可以是複數個，舉例來說，請配合圖6，該析出盒具有一第一析出部A1及一第二析出部A2，該第一析出部A1相對該第二析出部A2設置於靠近該加熱裝置之加熱器30的位置，以於該第一析出部A1與該第二析出部A2之間形成一溫度梯度，該隔熱件100包含一第一隔熱件102及一第二隔熱件104，該第一隔熱件102設置於該第一析出部A1之外壁，該第二隔熱件104設置於該第二析出部A2之外壁，且該第一隔熱件102與該第二隔熱件104分別具有相異之熱傳導係數，該熱傳導係數介於0.13~0.5 W/m.K。In this embodiment, one heat insulating element 100 is used as an example for illustration. In other embodiments, the number of heat insulating elements 100 can also be multiple. For example, please refer to FIG. 6 , the separation box has a A first precipitation part A1 and a second precipitation part A2, the first precipitation part A1 is arranged at a position close to the heater 30 of the heating device relative to the second precipitation part A2, so that the first precipitation part A1 and the second precipitation part A temperature gradient is formed between the two precipitation parts A2, and the heat insulating element 100 includes a first heat insulating element 102 and a second heat insulating element 104, and the first heat insulating element 102 is arranged on the outer wall of the first precipitation part A1 , the second heat insulating element 104 is disposed on the outer wall of the second precipitation part A2, and the first heat insulating element 102 and the second heat insulating element 104 have different thermal conductivity coefficients, and the thermal conductivity coefficient is between 0.13~ 0.5 W/m.K.

如此一來，能透過調整該第一隔熱件102與該第二隔熱件104之該熱傳導係數以控制該第一析出部A1與該第二析出部A2間之溫差，當溫差越接近時，該第一析出部A1與該第二析出部A2析出之固態矽氧化物之含氧量越一致，該溫差舉例來說可以是小於50度，較佳者小於30度，最佳者小於10度，反之，當該第一析出部A1與該第二析出部A2間之溫差越大時，該第一析出部A1與該第二析出部A2能析出不同含氧量之固態矽氧化物。除了上述能透過調整該第一隔熱件102與該第二隔熱件104之熱傳導係數以控制該第一析出部A1與該第二析出部A2間之溫差外，也能透過調整該第一隔熱件102與該第二隔熱件104之厚度來控制該第一析出部A1與該第二析出部A2間之溫差，於本實施例中該第一隔熱件102與該第二隔熱件104之厚度差為20mm~70mm。除此之外，不排除只於該第一析出部A1設置該第一隔熱件102或者只於該第二析出部A2設置該第二隔熱件104。In this way, the temperature difference between the first precipitation part A1 and the second precipitation part A2 can be controlled by adjusting the thermal conductivity coefficient of the first heat insulation part 102 and the second heat insulation part 104. When the temperature difference is closer , the more consistent the oxygen content of the solid silicon oxide precipitated in the first precipitation part A1 and the second precipitation part A2 is, the temperature difference can be, for example, less than 50 degrees, preferably less than 30 degrees, most preferably less than 10 degrees. On the contrary, when the temperature difference between the first precipitation part A1 and the second precipitation part A2 is larger, the first precipitation part A1 and the second precipitation part A2 can deposit solid silicon oxides with different oxygen contents. In addition to controlling the temperature difference between the first precipitation part A1 and the second precipitation part A2 by adjusting the thermal conductivity of the first heat insulating member 102 and the second heat insulating member 104, it is also possible to adjust the first The thickness of the thermal insulation 102 and the second thermal insulation 104 is used to control the temperature difference between the first precipitation part A1 and the second precipitation part A2. In this embodiment, the first thermal insulation 102 and the second thermal insulation The thickness difference of the heat element 104 is 20mm~70mm. In addition, it is not excluded that the first thermal insulation member 102 is only disposed on the first precipitation part A1 or the second thermal insulation component 104 is only disposed on the second precipitation part A2.

請配合圖7所示，再說明的是，於其他實施例中，該遮罩90也可以是其他形狀，並不以上述實施例為限，舉例來說遮罩也可以是之平板狀的遮罩92，一樣能達成限制氣態矽氧化物之流動區域之效果。Please cooperate with what is shown in FIG. 7 and further explain that in other embodiments, the mask 90 can also be in other shapes, and is not limited to the above-mentioned embodiments. For example, the mask can also be a flat plate The cover 92 can also achieve the effect of restricting the flow area of gaseous silicon oxide.

請配合圖8所示，於其他實施例中，該矽氧化物之製備裝置包含一絕熱件94，該絕熱件94可以是由碳纖或其他隔熱材料製成，設置於該析出盒與該隔熱材料12之間，用以使該析出盒與該隔熱材料12之間間隔一距離D，透過調整該絕熱件94之厚度能控制該析出盒與該加熱裝置之距離，而能控制析出盒之溫度，進而控制固態矽氧化物之含氧量，即SiOx之x值，例如，當該絕熱件94之厚度增厚時，該析出盒與該隔熱材料12之間間隔距離D增大，使得該析出盒與該加熱裝置之距離增大，進而能調降該析出盒之溫度，於本實施例中，該距離D是以300mm為例說明，於其他實施例中，距離D可以是小於300mm。Please cooperate with Fig. 8, in other embodiments, the silicon oxide preparation device includes a heat insulating member 94, which can be made of carbon fiber or other heat insulating materials, and is arranged between the precipitation box and the insulation Between the thermal material 12, in order to make a distance D between the separation box and the heat insulating material 12, the distance between the separation box and the heating device can be controlled by adjusting the thickness of the heat insulating member 94, and the separation box can be controlled. temperature, and then control the oxygen content of solid silicon oxide, i.e. the x value of SiOx, for example, when the thickness of the heat insulating member 94 increases, the distance D between the precipitation box and the heat insulating material 12 increases, Make the distance between the separation box and the heating device increase, and then lower the temperature of the precipitation box. In this embodiment, the distance D is 300mm as an example. In other embodiments, the distance D can be less than 300mm.

綜上所述，本發明之矽氧化物之製備裝置1藉由隔板之設置，能增加與氣態矽氧化物之接觸面積並延長氣態矽氧化物之氣流路徑，進而提升矽氧化物的產量，且能透過調整該第一隔熱件102與該第二隔熱件104之該熱傳導係數或該第一隔熱件102與該第二隔熱件104之厚度，以控制該第一析出部A1與該第二析出部A2間之溫差，進而控制於該第一析出部A1與該第二析出部A2析出之固態矽氧化物的含氧量，除此之外，透過調整該絕熱件94之厚度能控制該析出盒與該加熱裝置之距離，而能控制析出盒之溫度，進而控制固態矽氧化物之含氧量，也就是SiOx之x值。To sum up, the preparation device 1 of the silicon oxide of the present invention can increase the contact area with the gaseous silicon oxide and prolong the gas flow path of the gaseous silicon oxide through the setting of the partition, thereby increasing the output of the silicon oxide. And the first precipitation part A1 can be controlled by adjusting the thermal conductivity of the first heat insulating element 102 and the second heat insulating element 104 or the thickness of the first heat insulating element 102 and the second heat insulating element 104 The temperature difference between the second precipitation part A2 and the oxygen content of the solid silicon oxide precipitated in the first precipitation part A1 and the second precipitation part A2 is further controlled. In addition, by adjusting the The thickness can control the distance between the precipitation box and the heating device, and can control the temperature of the precipitation box, and then control the oxygen content of solid silicon oxide, that is, the x value of SiOx.

以上所述僅為本發明較佳可行實施例而已，舉凡應用本發明說明書及申請專利範圍所為之等效變化，理應包含在本發明之專利範圍內。The above description is only a preferred feasible embodiment of the present invention, and all equivalent changes made by applying the description of the present invention and the scope of the patent application should be included in the scope of the patent of the present invention.

［本發明］ 1:矽氧化物之製備裝置 10:加熱爐 10a:內爐壁 100:隔熱件 102:第一隔熱件 104:第二隔熱件 12:隔熱材料 20:載台 30:加熱器 40:坩堝 40a:上開口 50:析出盒 50a:入氣口 50b:出氣口 52:盒體 521:左側板 522:右側板 523:頂板 524:底板 525:側開口 54:盒蓋 60:排氣管道 60a:第一端 60b:第二端 70:抽氣裝置 80:橫向隔板 82,82a,82b:縱向隔板 90,92:遮罩 94:絕熱件 90a:開孔 A1:第一析出部 A2:第二析出部 C:通道 D,D1,D2,D3,D4,D5,D6:距離 H1,H2,H3,H4,H5:間距 H:高度 R:加熱爐腔 X:軸線 S:固態矽氧化物 [this invention] 1: Preparation device of silicon oxide 10: Heating furnace 10a: inner furnace wall 100: heat insulation 102: The first insulation 104: the second insulation 12: Insulation material 20: Carrier 30: heater 40: Crucible 40a: upper opening 50: Precipitation box 50a: air inlet 50b: Air outlet 52: box body 521: Left side panel 522: Right side panel 523: top plate 524: Bottom plate 525: side opening 54: box cover 60: exhaust pipe 60a: first end 60b: second end 70: Air extraction device 80: horizontal partition 82, 82a, 82b: longitudinal partitions 90,92: mask 94: Insulation 90a: opening A1: The first precipitation part A2: The second precipitation part C: channel D,D1,D2,D3,D4,D5,D6: distance H1, H2, H3, H4, H5: Spacing H: height R: heating chamber X: axis S: solid silicon oxide

圖1為本發明一較佳實施例之矽氧化物之製備裝置的示意圖。 圖2為上述較佳實施例之部分構件示意圖。 圖3A為上述較佳實施例之析出盒的示意圖。 圖3B為上述較佳實施例之析出盒的示意圖。 圖4為本發明另一較佳實施例之析出盒的示意圖。 圖5為本發明另一較佳實施例之析出盒的示意圖。 圖6為本發明另一較佳實施例之部分構件示意圖。 圖7為本發明另一較佳實施例之部分構件示意圖。 圖8為本發明另一較佳實施例之部分構件示意圖。 FIG. 1 is a schematic diagram of a silicon oxide preparation device according to a preferred embodiment of the present invention. Fig. 2 is a schematic diagram of some components of the above-mentioned preferred embodiment. Fig. 3A is a schematic diagram of the precipitation box of the above-mentioned preferred embodiment. Fig. 3B is a schematic diagram of the precipitation box of the above-mentioned preferred embodiment. Fig. 4 is a schematic diagram of a separation box according to another preferred embodiment of the present invention. Fig. 5 is a schematic diagram of a separation box according to another preferred embodiment of the present invention. Fig. 6 is a schematic diagram of some components of another preferred embodiment of the present invention. Fig. 7 is a schematic diagram of some components of another preferred embodiment of the present invention. Fig. 8 is a schematic diagram of some components of another preferred embodiment of the present invention.

1:矽氧化物之製備裝置 1: Preparation device of silicon oxide

10:加熱爐 10: Heating furnace

10a:內爐壁 10a: inner furnace wall

100:隔熱件 100: heat insulation

12:隔熱材料 12: Insulation material

20:載台 20: Carrier

30:加熱器 30: heater

40:坩堝 40: Crucible

50:析出盒 50: Precipitation box

50a:入氣口 50a: air inlet

50b:出氣口 50b: Air outlet

60:排氣管道 60: exhaust pipe

60a:第一端 60a: first end

60b:第二端 60b: second end

70:抽氣裝置 70: Air extraction device

80:橫向隔板 80: horizontal partition

C:通道 C: channel

H:高度 H: height

R:加熱爐腔 R: heating chamber

X:軸線 X: axis

Claims (17)

一種矽氧化物之製備裝置，包含：一加熱爐，內部具有由一隔熱材料圍設形成之一加熱爐腔；一加熱裝置，設置於該加熱爐腔中；一坩堝，設置於該加熱爐腔中，用以容置一固態原料，該固態原料包括二氧化矽及矽，該加熱裝置對該坩堝加熱使該固態原料形成一氣態矽氧化物；該坩堝具有一上開口；一析出盒，設置於該加熱爐腔與該加熱爐之內爐壁之間，該析出盒具有一入氣口及一出氣口，該析出盒包含至少一隔板並設置於該析出盒之內部空間中，該至少一隔板與該析出盒之內壁形成至少一通道，該至少一通道分別連通該入氣口及該出氣口；一排氣管道，具有一第一端及一第二端，該第一端設置於鄰近該坩堝的該上開口的位置，該第二端與該析出盒之該入氣口連通；以及一抽氣裝置，與該析出盒之該出氣口連通；該抽氣裝置將該氣態矽氧化物抽離該坩堝，以使該氣態矽氧化物與該析出盒之內壁及該至少一隔板之表面接觸以析出一固態之矽氧化物。 A device for preparing silicon oxide, comprising: a heating furnace with a heating chamber surrounded by a heat insulating material; a heating device installed in the heating chamber; a crucible installed in the heating furnace The cavity is used to accommodate a solid raw material, the solid raw material includes silicon dioxide and silicon, and the heating device heats the crucible so that the solid raw material forms a gaseous silicon oxide; the crucible has an upper opening; a precipitation box, It is arranged between the heating furnace cavity and the inner furnace wall of the heating furnace. The precipitation box has a gas inlet and a gas outlet. The precipitation box includes at least one partition and is arranged in the inner space of the precipitation box. The at least A partition and the inner wall of the separation box form at least one channel, and the at least one channel communicates with the gas inlet and the gas outlet respectively; an exhaust pipe has a first end and a second end, and the first end is provided with At a position adjacent to the upper opening of the crucible, the second end communicates with the gas inlet of the precipitation box; and a gas extraction device communicates with the gas outlet of the precipitation box; the gas extraction device oxidizes the gaseous silicon The material is drawn away from the crucible so that the gaseous silicon oxide contacts the inner wall of the precipitation box and the surface of the at least one partition to precipitate a solid silicon oxide. 如請求項1所述之矽氧化物之製備裝置，其中該至少一通道之總長度大於該入氣口與該出氣口之間的一最小距離。 The silicon oxide manufacturing device according to claim 1, wherein the total length of the at least one channel is greater than a minimum distance between the gas inlet and the gas outlet. 如請求項1所述之矽氧化物之製備裝置，其中該至少一隔板包含至少一橫向隔板，該至少一橫向隔板係橫向設置於該析出盒之內部空間中，並且與該入氣口及該出氣口之間的一軸線相交。 The device for preparing silicon oxide according to claim 1, wherein the at least one partition comprises at least one horizontal partition, and the at least one horizontal partition is arranged laterally in the inner space of the precipitation box, and is connected to the gas inlet and an axis between the air outlets intersect. 如請求項3所述之矽氧化物之製備裝置，其中該至少一隔板之數量為複數個，該些隔板包含至少一縱向隔板，該至少一縱向隔 板係縱向設置於該析出盒之內部空間中，且該至少一縱向隔板與該至少一橫向隔板連接。 The device for preparing silicon oxide according to claim 3, wherein the at least one spacer is plural in number, and the spacers include at least one vertical spacer, and the at least one vertical spacer The plate is vertically arranged in the inner space of the separation box, and the at least one vertical partition is connected with the at least one transverse partition. 如請求項4所述之矽氧化物之製備裝置，其中該至少一縱向隔板之一端連接於該至少一橫向隔板之板面，另一端往該析出盒之該入氣口的方向延伸。 The device for preparing silicon oxide according to claim 4, wherein one end of the at least one vertical partition is connected to the plate surface of the at least one horizontal partition, and the other end extends toward the gas inlet of the precipitation box. 如請求項5所述之矽氧化物之製備裝置，其中該至少一縱向隔板通過該軸線並與該入氣口間具有一最小距離，該最小距離大於等於100mm且小於等於190mm。 The device for producing silicon oxide according to claim 5, wherein the at least one vertical partition passes through the axis and has a minimum distance from the air inlet, and the minimum distance is greater than or equal to 100mm and less than or equal to 190mm. 如請求項1所述之矽氧化物之製備裝置，其中該析出盒具有一第一析出部及一第二析出部，該第一析出部相對該第二析出部設置於靠近該加熱裝置的位置。 The device for preparing silicon oxide according to claim 1, wherein the precipitation box has a first precipitation part and a second precipitation part, and the first precipitation part is arranged at a position close to the heating device relative to the second precipitation part . 如請求項7所述之矽氧化物之製備裝置，包含至少一隔熱件設置於該第一析出部或該第二析出部中之至少一者之外壁。 The silicon oxide production device according to claim 7, comprising at least one heat insulating member disposed on the outer wall of at least one of the first precipitation part or the second precipitation part. 如請求項8所述之矽氧化物之製備裝置，其中該至少一隔熱件之數量為複數個，該些隔熱件包含一第一隔熱件及一第二隔熱件，該第一隔熱件設置於該第一析出部之外壁，該第二隔熱件設置於該第二析出部之外壁，且該第一隔熱件與該第二隔熱件具有相異之熱傳導係數。 The silicon oxide production device as described in Claim 8, wherein the quantity of the at least one heat insulating element is plural, and the heat insulating elements include a first heat insulating element and a second heat insulating element, and the first heat insulating element The heat insulating element is arranged on the outer wall of the first precipitation part, the second heat insulating element is arranged on the outer wall of the second precipitation part, and the first heat insulating element and the second heat insulating element have different thermal conductivity coefficients. 如請求項9所述之矽氧化物之製備裝置，其中該第一隔熱件與該第二隔熱件之熱傳導係數介於0.13~0.5W/m.K。 The device for preparing silicon oxide according to Claim 9, wherein the thermal conductivity of the first heat insulating member and the second heat insulating member is between 0.13-0.5 W/m.K. 如請求項8所述之矽氧化物之製備裝置，其中該至少一隔熱件之數量為複數個，該些隔熱件包含一第一隔熱件及一第二隔熱件，該第一隔熱件設置於該第一析出部之外壁，該第二隔熱件設置於該第二析出部之外壁，且該第一隔熱件與該第二隔熱件具有相異之厚度。 The silicon oxide production device as described in Claim 8, wherein the quantity of the at least one heat insulating element is plural, and the heat insulating elements include a first heat insulating element and a second heat insulating element, and the first heat insulating element The heat insulation element is arranged on the outer wall of the first precipitation part, the second heat insulation element is arranged on the outer wall of the second precipitation part, and the first heat insulation element and the second heat insulation element have different thicknesses. 如請求項1所述之矽氧化物之製備裝置，其中該至少一隔板之熱傳導係數大於或等於16W/m.K。 The device for producing silicon oxide according to claim 1, wherein the thermal conductivity of the at least one spacer is greater than or equal to 16W/m.K. 如請求項1所述之矽氧化物之製備裝置，包含一遮罩，覆蓋該坩堝，該遮罩具有一開孔，該開孔連通該排氣管道之該第一端及該坩堝之內部。 The device for preparing silicon oxide according to Claim 1 includes a mask covering the crucible, the mask having an opening, and the opening communicates with the first end of the exhaust pipe and the inside of the crucible. 如請求項1所述之矽氧化物之製備裝置，包含一絕熱件，設置於該析出盒與該隔熱材料之間，用以使該析出盒與該隔熱材料之間間隔一距離。 The device for preparing silicon oxide according to claim 1, comprising a heat insulating member disposed between the precipitation box and the heat insulation material, so as to keep a distance between the precipitation box and the heat insulation material. 如請求項1所述之矽氧化物之製備裝置，其中該抽氣裝置為旋風集塵器。 The device for preparing silicon oxide according to Claim 1, wherein the air extraction device is a cyclone dust collector. 如請求項1所述之矽氧化物之製備裝置，其中該析出盒包含一盒體及一盒蓋，該盒體具有一側開口，該盒蓋用以封閉該側開口，該至少一隔板之數量為複數個，該些隔板分別連接於該盒體內壁及該盒蓋上。 The device for preparing silicon oxide according to claim 1, wherein the precipitation box includes a box body and a box cover, the box body has a side opening, the box cover is used to close the side opening, and the at least one partition The quantity is plural, and these partitions are respectively connected to the inner wall of the box and the box cover. 如請求項16所述之矽氧化物之製備裝置，其中當該盒蓋封閉該側開口時，連接於該盒體內壁之隔板與連接於該盒蓋上之隔板彼此交錯排列。 The device for preparing silicon oxide according to claim 16, wherein when the lid closes the side opening, the partitions connected to the inner wall of the box and the partitions connected to the lid are alternately arranged.
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