TWI798260B - 晶圓加工方法 - Google Patents

晶圓加工方法 Download PDF

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TWI798260B
TWI798260B TW107132230A TW107132230A TWI798260B TW I798260 B TWI798260 B TW I798260B TW 107132230 A TW107132230 A TW 107132230A TW 107132230 A TW107132230 A TW 107132230A TW I798260 B TWI798260 B TW I798260B
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鈴木克彥
伴祐人
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日商迪思科股份有限公司
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Abstract

[課題] 提供一種晶圓加工方法，能藉由在晶圓正面被覆的包含炭黑的密封材實施對準步驟。[解決手段] 一種晶圓加工方法，以密封材密封元件晶圓的正面，在該密封材的該晶片區域上分別形成多個凸塊，該元件晶圓藉由在正面交叉形成的多條分割預定線劃分的晶片區域上分別形成元件而成，該晶圓加工方法的特徵在於具備：對準步驟，從該晶圓的正面側藉由紅外線攝像手段穿透該密封材，對該元件晶圓的正面側攝像並檢測對準標記，且基於該對準標記檢測應進行雷射加工的該分割預定線；以及分割步驟，實施了該對準步驟後，從該晶圓的正面側沿著該分割預定線照射對該密封材及該元件晶圓具有吸收性的波長的雷射光束，並藉由燒蝕加工分割為正面藉由密封材密封的一個個的元件晶片；該密封材具有使該紅外線攝像手段所接收的紅外線穿透般的穿透性。

Description

晶圓加工方法
本發明為關於WL-CSP晶圓的加工方法。
WL-CSP（Wafer-level Chip Size Package，晶圓級晶片尺寸封裝）晶圓是在晶圓的狀態下形成重佈層及電極（金屬柱）後，將正面側以樹脂密封，並以切割刀片等分割成各封裝件的技術，因為晶圓單體化後的封裝件的大小近似於半導體元件晶片的大小，從小型化及輕量化的觀點亦被廣泛採用。
在WL-CSP晶圓的製程中，在形成多個元件的元件晶圓之元件面側形成重佈層，並進一步透過重佈層形成用來連接元件中的電極的金屬柱後，以樹脂密封金屬柱及元件。
接著，薄化密封材並同時使金屬柱在密封材表面露出後，在金屬柱的端面形成被稱為電極凸塊的外部端子。之後，以切割裝置等切割WL-CSP晶圓並分割為一個個的CSP。
為了保護半導體晶圓免於衝擊或濕氣等，以密封材進行密封相當重要。通常，作為密封材，藉由使用在環氧樹脂中混入由SiC所組成的填充料而成之密封材，密封材的熱膨脹係數近似於半導體元件晶片的熱膨脹係數，防止藉由熱膨脹係數的差異所產生加熱時的封裝件的損壞。
WL-CSP晶圓一般而言使用切割裝置分割為一個個的CSP。在此種情況，由於樹脂覆蓋住為了檢測分割預定線而利用的元件，故WL-CSP晶圓無法從正面側檢測元件的目標（target）圖案。
為此，以在WL-CSP晶圓的樹脂上形成的電極凸塊為目標分度分割預定線，並在樹脂上表面印刷對準用的目標等，進行分割預定線和切割刀片的對準。
但是，在電極凸塊或樹脂上印刷的目標並未形成為如元件般高精確度，故作為對準用的目標有低精確度的問題。因此，基於電極凸塊或印刷的目標而分度分割預定線的情況，恐有偏離分割預定線而切割到元件部分之慮。
因此，例如在日本特開2013-74021號公報中，提出基於在晶圓的外周露出的元件晶圓的圖案來進行對準的方法。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2013-074021號公報 [專利文獻2]日本特開2016-015438號公報
[發明所欲解決的課題] 但是，一般在晶圓的外周上的元件精確度差，若基於在晶圓的外周露出的圖案實施對準時，除有在偏離分割預定線的位置上分割晶圓之慮，更有因晶圓不同而有元件晶圓的圖案不在外周露出之情況。
本發明鑒於上述的問題點，其目的為提供一種晶圓加工方法，能藉由在晶圓正面被覆之包含炭黑的密封材而實施對準步驟。
[解決課題的技術手段] 根據本發明，提供一種晶圓加工方法，以密封材密封元件晶圓的正面，在該密封材的該晶片區域上分別形成多個凸塊，該元件晶圓藉由在正面交叉形成的多條分割預定線劃分的晶片區域上分別形成元件而成，該晶圓加工方法的特徵在於具備：對準步驟，從該晶圓的正面側藉由紅外線攝像手段穿透該密封材，對該元件晶圓的正面側攝像並檢測對準標記，且基於該對準標記檢測應進行雷射加工的該分割預定線；以及分割步驟，實施了該對準步驟後，從該晶圓的正面側沿著該分割預定線照射對該密封材及該元件晶圓具有吸收性的波長的雷射光束，並藉由燒蝕加工分割為正面藉由密封材密封的一個個的元件晶片；該密封材具有使該紅外線攝像手段所接收的紅外線穿透般的穿透性。
較佳為，在對準步驟中使用的紅外線攝影手段包含InGaAs攝像元件。
[發明功效] 根據本發明的晶圓加工方法，因以使紅外線攝像手段所接收的紅外線穿透之密封材來密封元件晶圓，並藉由紅外線攝像手段穿透密封材而檢測在元件晶圓上形成的對準標記，且能基於對準標記實施對準，因此不需如以往般去除在晶圓的正面的外周部分的密封材，即可簡單實施對準步驟。
因此，從晶圓的正面側沿著該分割預定線照射對該密封材及該元件晶圓具有吸收性的波長的雷射光束，能藉由燒蝕加工將晶圓分割為一個個的元件晶片。
以下參閱圖式詳細說明本發明的實施方式。WL-CSP晶圓27的分解立體圖參閱圖1（A）而示出。圖1（B）係WL-CSP晶圓27的立體圖。
如圖1（A）所示，在元件晶圓11的正面11a上，在形成為格子狀的多條分割預定線（切割道）13所劃分的各區域上形成LSI（Large Scale Integration，大型積體電路）等的元件15。
元件晶圓（以下有單純略稱為晶圓之情形）11是預先研削背面11b並薄化至預定的厚度（100~200µm程度）後，如圖2所示，在元件15中的電極17形成電性連接的多個金屬柱21後，以將金屬柱21埋設在晶圓11的正面11a側之方式利用密封材23進行密封。
作為密封材23，包含以質量%表示的10.3%的環氧樹脂或環氧樹脂＋酚樹脂、8.53%的二氧化矽填充料、0.1~0.2%的炭黑，以及4.2~4.3%的其他成分之組成。作為其他成分，舉例而言包含金屬氫氧化物、三氧化二銻、二氧化矽等。
以如此組成的密封材23被覆晶圓11的正面11a並密封晶圓11的正面11a，則因為密封材23中含有極少量的炭黑而使密封材23變為黑色，一般難以通過密封材23看見晶圓11的正面11a。
在此密封材23中混入炭黑的原因，主要為了防止元件15的靜電破壞，現在市面並未販售不含有炭黑的密封材。
作為其他的實施方式，在元件晶圓11的正面11a上形成重佈層後，在重佈層上亦可形成對元件15中的電極17電性連接的金屬柱21。
接著，使用具有由單晶鑽石所組成的位元切割工具並稱之為平面切割裝置（鉋平機）或磨床（grinder）的研削裝置薄化密封材23。薄化密封材23後，例如藉由電漿蝕刻使金屬柱21的端面露出。
接著，在露出的金屬柱21的端面藉由周知的方法形成焊料等金屬凸塊25，並完成WL-CSP晶圓27。在本實施方式的WL-CSP晶圓27中，密封材23的厚度為100µm程度。
以雷射加工裝置加工WL-CSP晶圓27時，如圖3所示，較佳為WL-CSP晶圓27的外周部黏貼有黏貼於環狀框架F之作為黏著膠膜的切割膠膜T。藉此，WL-CSP晶圓27透過切割膠膜T成為支撐於環狀框架F的狀態。
但是，以雷射加工裝置加工WL-CSP晶圓27時，亦可不使用環狀框架F，利用在WL-CSP晶圓27的背面黏貼黏著膠膜的方式。
在本發明的晶圓加工方法中，首先，從WL-CSP晶圓27的正面側藉由紅外線攝像手段通過密封材23對元件晶圓11的正面11a攝像，並檢測在元件晶圓11的正面上形成的至少2個的目標圖案等的對準標記，基於這些對準標記檢測應進行雷射加工的分割預定線13並實施對準步驟。
關於該對準步驟，參閱圖4進行詳細說明。在對準步驟中，如圖4所示，透過切割膠膜T在雷射加工裝置的卡盤台10吸引保持WL-CSP晶圓27，且使密封元件晶圓11的正面11a的密封材23在上方露出。並且，以夾具12夾住固定環狀框架F。
接著，以未圖示的雷射加工裝置的攝像單元14的紅外線攝像元件，通過WL-CSP晶圓27的密封材23對元件晶圓11的正面11a進行攝像。密封材23是由使攝像單元14的紅外線攝像手段所接收的紅外線穿透的密封材所構成，因此能檢測藉由紅外線攝像元件在元件晶圓11的表面11a形成的至少2個的目標圖案等的對準標記。
較佳為，採用高感度的InGaAs攝像元件作為紅外線攝像元件。較佳為，攝像單元14具備能調整曝光時間等的曝光器。
接著，以使連結這些對準標記的直線與加工進給方向平行的方式對卡盤台10進行θ旋轉，並進一步藉由將卡盤台10在與加工進給方向正交的方向上僅移動對準標記與分割預定線13的中心之距離，檢測應進行雷射加工的分割預定線13。
實施了對準步驟後，如圖5（A）所示，從WL-CSP晶圓27的正面側沿著分割預定線13，從雷射加工裝置的雷射頭（聚光器）16照射對密封材23及元件晶圓11具有吸收性的波長（例如355nm）的雷射光束LB，並藉由燒蝕加工形成如圖5（B）所示的雷射加工槽29，且將WL-CSP晶圓27分割為正面藉由密封材23密封的一個個的元件晶片（CSP）31。
藉由沿著在第1方向伸長的分割預定線13多次實施該分割步驟後，90°旋轉卡盤台10，並沿著在正交第1方向的第2方向上伸長的分割預定線13多次實施該分割步驟，如圖5（B）所示，能將WL-CSP晶圓27分割為正面藉由密封材23密封的一個個的CSP31。
如此所製造的元件晶片（CSP）31，藉由反轉CSP31的正背面且將凸塊25連接至主機板的導電焊墊之覆晶接合，能安裝在主機板上。
11‧‧‧元件晶圓13‧‧‧分割預定線14‧‧‧攝像單元15‧‧‧元件16‧‧‧雷射頭（聚光器）21‧‧‧金屬柱23‧‧‧密封材25‧‧‧凸塊27‧‧‧WL-CSP晶圓31‧‧‧元件晶片（CSP）
圖1（A）係WL-CSP晶圓的分解立體圖，圖1（B）係WL-CSP晶圓的立體圖。 圖2係WL-CSP晶圓的放大剖面圖。 圖3係表示WL-CSP晶圓的外周部黏貼裝設於環狀框架的切割膠膜的樣子的立體圖。 圖4係表示對準步驟的剖面圖。 圖5（A）係表示分割步驟的剖面圖，圖5（B）係表示分割步驟的放大剖面圖。
F‧‧‧環狀框架
T‧‧‧切割膠膜
10‧‧‧卡盤台
11‧‧‧元件晶圓
11a‧‧‧晶元的正面
12‧‧‧夾具
14‧‧‧攝像單元
23‧‧‧密封材
27‧‧‧WL-CSP晶圓

Claims (2)

  1. 一種晶圓加工方法，以密封材密封元件晶圓的正面，在該密封材的晶片區域上分別形成多個凸塊，該元件晶圓藉由在正面交叉形成的多條分割預定線劃分的該晶片區域上分別形成元件而成，該晶圓加工方法的特徵在於具備：對準步驟，從該元件晶圓的正面側藉由具備能調整曝光時間的曝光器之紅外線攝像手段穿透該密封材，對該元件晶圓的正面側攝像並檢測對準標記，且基於該對準標記檢測應進行雷射加工的該分割預定線；以及分割步驟，實施了該對準步驟後，從該元件晶圓的正面側沿著該分割預定線照射對該密封材及該元件晶圓具有吸收性的波長的雷射光束，並藉由燒蝕加工分割為正面藉由密封材密封的一個個的元件晶片；該密封材具有使該紅外線攝像手段所接收的紅外線穿透般的穿透性；該密封材含有炭黑；該炭黑的含有率為0.1質量%以上0.2質量%以下。
  2. 如申請專利範圍第1項所述之晶圓加工方法，其中，在該對準步驟中使用的該紅外線攝像手段包含InGaAs攝像元件。
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