TWI796008B - Photomask and manufacturing method of semiconductor device - Google Patents

Photomask and manufacturing method of semiconductor device Download PDF

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TWI796008B
TWI796008B TW110143426A TW110143426A TWI796008B TW I796008 B TWI796008 B TW I796008B TW 110143426 A TW110143426 A TW 110143426A TW 110143426 A TW110143426 A TW 110143426A TW I796008 B TWI796008 B TW I796008B
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pattern
resolution
main
sub
distance
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TW202321812A (en
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陳世佳
張宜翔
林嘉祺
賴俊丞
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力晶積成電子製造股份有限公司
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Abstract

A photomask is suitable for using a mask aligner to expose a photoresist layer on a substrate to manufacture a semiconductor device through the photomask, wherein the mask aligner has a minimum resolution distance. The photomask includes a plurality of main patterns and at least one sub-resolution assist feature pattern (SRAF pattern). The main pattern includes a first main pattern and a second main pattern adjacent to each other. The SRAF pattern is located between the first main pattern and the second main pattern. The center of the first main pattern to the center of the second main pattern is defined as a main pitch. The main pitch is greater than the minimum resolution distance.

Description

光罩以及半導體元件的製造方法Method for manufacturing photomask and semiconductor element

本發明是有關於一種光罩以及半導體元件的製造方法，且特別是有關於一種具有相鄰於主圖案（main pattern）的次解析度圖案（sub-resolution assist feature pattern；SRAF pattern）的光罩以及藉由該光罩進行半導體元件製造的製造方法。The present invention relates to a method of manufacturing a photomask and a semiconductor device, and in particular to a photomask having a sub-resolution assist feature pattern (SRAF pattern) adjacent to a main pattern (main pattern) And a manufacturing method for semiconductor element manufacturing by using the photomask.

在先進半導體製程中，次解析度輔助特徵（sub-resolution assist feature；SRAF）是微影製程（photolithography process）中的重要技術；其是藉由對應於光罩上的主要特徵（如：主圖案）和輔助特徵（如：次解析度圖案）之間，在曝光過程中的光學干涉來提升單一特徵區域（isolated feature region）或半單一特徵區域（semi-isolated feature region）的製程裕度（process window）。In the advanced semiconductor manufacturing process, the sub-resolution assist feature (SRAF) is an important technology in the photolithography process; ) and auxiliary features (such as: sub-resolution patterns), optical interference during exposure to improve the process margin (process of isolated feature region) or semi-isolated feature region (semi-isolated feature region) window).

然而，在光罩的圖案設計過程中，常需要藉由多次或長時間的模擬來達到整體的最佳化，而這常會直接地或間接地造成半導體元件的製造過程的效率低落。However, in the pattern design process of the photomask, multiple or long-time simulations are often required to achieve the overall optimization, and this often directly or indirectly causes the efficiency of the manufacturing process of the semiconductor device to be low.

本發明提供一種光罩，其在半導體元件的製造過程中可以具有較佳的製程裕度。並且，可以使半導體元件的製造過程較有效率。The invention provides a photomask, which can have a better process margin in the manufacturing process of semiconductor elements. Also, the manufacturing process of the semiconductor element can be made more efficient.

本發明的光罩適於以曝光機並藉由該光罩以對基板上的光阻層進行曝光以製造半導體元件，其中曝光機具有最小解析距離。光罩包括多個的主圖案以及至少一個的次解析度圖案。多個的主圖案包括相鄰的第一主圖案及第二主圖案。次解析度圖案位於第一主圖案及第二主圖案之間。第一主圖案的中心及第二主圖案的中心為第一主間距。第一主間距大於最小解析距離。The photomask of the present invention is suitable for exposing the photoresist layer on the substrate with an exposure machine to manufacture semiconductor elements, wherein the exposure machine has a minimum resolution distance. The mask includes a plurality of main patterns and at least one sub-resolution pattern. The plurality of main patterns include adjacent first main patterns and second main patterns. The sub-resolution pattern is located between the first main pattern and the second main pattern. The center of the first main pattern and the center of the second main pattern are the first main pitch. The first main distance is greater than the minimum resolution distance.

在本發明的一實施例中，次解析度圖案包括N個的次解析度圖案，其中N≧1，其中：第1個的次解析度圖案與第一主圖案相鄰，第1個的次解析度圖案與第一主圖案之間具有第1次間距，且第1次間距小於兩倍的最小解析距離；且第N個的次解析度圖案與第二主圖案相鄰，第N個的次解析度圖案與第二主圖案之間具有第N+1次間距，且第N+1次間距小於兩倍的最小解析距離。In an embodiment of the present invention, the sub-resolution pattern includes N sub-resolution patterns, where N≧1, wherein: the first sub-resolution pattern is adjacent to the first main pattern, and the first sub-resolution pattern There is a first interval between the resolution pattern and the first main pattern, and the first interval is less than twice the minimum resolution distance; and the Nth sub-resolution pattern is adjacent to the second main pattern, and the Nth There is an N+1th interval between the sub-resolution pattern and the second main pattern, and the N+1th interval is smaller than twice the minimum resolution distance.

在本發明的一實施例中，第1次間距或第N+1次間距大於至少一個的次解析度圖案的寬度 。In an embodiment of the present invention, the 1st pitch or the N+1th pitch is greater than the width of at least one sub-resolution pattern.

在本發明的一實施例中，N≧2，且在N個的次解析度圖案中，第M個的次解析度圖案及第M-1個的次解析度圖案彼此相鄰，其中N≧M≧2，第M個的次解析度圖案與第M-1個的次解析度圖案之間具有第M次間距，且第M次間距小於或等於最小解析距離。In an embodiment of the present invention, N≧2, and among the N sub-resolution patterns, the Mth sub-resolution pattern and the M-1th sub-resolution pattern are adjacent to each other, wherein N≧ M≧2, there is an M-th distance between the M-th sub-resolution pattern and the M-1-th sub-resolution pattern, and the M-th distance is less than or equal to the minimum resolution distance.

在本發明的一實施例中，第M次間距大於第1次間距或第N+1次間距 。In an embodiment of the present invention, the Mth pitch is greater than the 1st pitch or the N+1th pitch.

在本發明的一實施例中，第一主間距為延著第一方向定義，且多個主圖案為延著垂直於第一方向的方向延伸的條狀圖案。In an embodiment of the present invention, the first main pitch is defined along a first direction, and the plurality of main patterns are striped patterns extending along a direction perpendicular to the first direction.

在本發明的一實施例中，多個的主圖案更包括第三主圖案。第一主圖案及第二主圖案於第一方向相鄰，第一主圖案及第三主圖案於第二方向相鄰，且第一方向不平行於第二方向。次解析度圖案包括至少一個的第一次解析度圖案以及至少一個的第二次解析度圖案。第一次解析度圖案位於第一主圖案及第二主圖案之間，且第二次解析度圖案位於第一主圖案及第三主圖案之間。第一主圖案的中心及第三主圖案的中心為第二主間距。第二主間距大於最小解析距離。In an embodiment of the invention, the plurality of main patterns further include a third main pattern. The first main pattern and the second main pattern are adjacent in the first direction, the first main pattern and the third main pattern are adjacent in the second direction, and the first direction is not parallel to the second direction. The sub-resolution patterns include at least one first-resolution pattern and at least one second-resolution pattern. The first resolution pattern is located between the first main pattern and the second main pattern, and the second resolution pattern is located between the first main pattern and the third main pattern. The center of the first main pattern and the center of the third main pattern are the second main pitch. The second main spacing is greater than the minimum resolution distance.

在本發明的一實施例中，至少一個的第一次解析度圖案包括N個的第一次解析度圖案，至少一個的第二次解析度圖案包括F個的第二次解析度圖案，其中N≧1，且F≧1，其中：第1個的第一次解析度圖案與第一主圖案相鄰，第1個的第一次解析度圖案與第一主圖案之間具有第1個的第一次間距，且第1個的第一次間距小於兩倍的最小解析距離；第N個的第一次解析度圖案與第二主圖案相鄰，第N個的第一次解析度圖案與第二主圖案之間具有第N+1個的第一次間距，且第N+1個的第一次間距小於兩倍的最小解析距離；第1個的第二次解析度圖案與第一主圖案相鄰，第1個的第二次解析度圖案與第一主圖案之間具有第1個的第二次間距，且第1個的第二次間距小於兩倍的最小解析距離；且第F個的第二次解析度圖案與第三主圖案相鄰，第F個的第二次解析度圖案與第三主圖案之間具有第F+1個的第二次間距，且第F+1個的第二次間距小於兩倍的最小解析距離。In an embodiment of the present invention, at least one first-time resolution pattern includes N first-time resolution patterns, and at least one second-time resolution pattern includes F second-time resolution patterns, wherein N≧1, and F≧1, wherein: the first first resolution pattern is adjacent to the first main pattern, and there is a first first resolution pattern between the first first resolution pattern and the first main pattern The first spacing of the first, and the first spacing of the first is less than twice the minimum resolution distance; the first resolution pattern of the Nth is adjacent to the second main pattern, and the first resolution of the Nth There is an N+1 first distance between the pattern and the second main pattern, and the first distance of the N+1 is less than twice the minimum resolution distance; the second resolution pattern of the first and The first main pattern is adjacent, and there is a first second spacing between the first second resolution pattern and the first main pattern, and the first second spacing is less than twice the minimum resolution distance ; and the F-th second resolution pattern is adjacent to the third main pattern, and there is a F+1 second interval between the F-th second resolution pattern and the third main pattern, and The second spacing of the F+1th is less than twice the minimum resolution distance.

在本發明的一實施例中，N≧2，且在N個的第一次解析度圖案中，第M個的第一次解析度圖案及第M-1個的第一次解析度圖案彼此相鄰，其中N≧M≧2，第M個的第一次解析度圖案與第M-1個的第一次解析度圖案之間具有第M個的第一次間距，且第M個的第一次間距小於或等於最小解析距離；且F≧2，且在F個的第二次解析度圖案中，第E個的第二次解析度圖案及第E-1個的第二次解析度圖案彼此相鄰，其中F≧E≧2，第E個的第二次解析度圖案與第E-1個的第二次解析度圖案之間具有第E個的第二次間距，且第E個的第二次間距小於或等於最小解析距離。In an embodiment of the present invention, N≧2, and among the N first-time resolution patterns, the M-th first-time resolution pattern and the M-1-th first-time resolution pattern are mutually Adjacent, where N≧M≧2, there is an M-th first-time spacing between the M-th first-time resolution pattern and the M-1-th first-time resolution pattern, and the M-th The first interval is less than or equal to the minimum resolution distance; and F≧2, and among the F second resolution patterns, the Eth second resolution pattern and the E-1th second resolution pattern The degree patterns are adjacent to each other, where F≧E≧2, there is a second spacing of the Eth second resolution pattern between the Eth second resolution pattern and the E-1th second resolution pattern, and the second The second interval of E is less than or equal to the minimum resolution distance.

本發明的半導體元件的製造方法包括以下步驟：形成光阻層於基板上；以曝光機並藉由前述任一實施例之光罩以對基板上的光阻層進行曝光；以及對曝光後的光阻層顯影以形成光阻圖案，其中曝光機具有最小解析距離。The manufacturing method of the semiconductor element of the present invention comprises the following steps: forming a photoresist layer on the substrate; exposing the photoresist layer on the substrate with an exposure machine and the photomask of any one of the aforementioned embodiments; and exposing the exposed photoresist layer The photoresist layer is developed to form a photoresist pattern, wherein the exposure machine has a minimum resolution distance.

基於上述，本發明的光罩具有對應的次解析度圖案，因此，其在半導體元件的製造過程中可以具有較佳的製程裕度。並且，藉由前述次解析度圖案的規則（rule）及對應的配置方式，可以降低模擬的時間及/或次數。因此，可以使半導體元件的製造過程（如：用於製造其的光罩設計過程）較有效率。Based on the above, the photomask of the present invention has a corresponding sub-resolution pattern, so it can have a better process margin in the manufacturing process of semiconductor devices. Moreover, the time and/or times of simulation can be reduced by the aforementioned rule of the sub-resolution pattern and the corresponding arrangement. Therefore, the manufacturing process of the semiconductor device (eg, the photomask design process for manufacturing the same) can be made more efficient.

下文列舉一些實施例並配合所附圖式來進行詳細地說明，但所提供的實施例並非用以限制本發明所涵蓋的範圍。Some embodiments are listed below and described in detail with the accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention.

在附圖中，為了清楚起見，可能放大或縮小了部分的圖案在一方向上的尺寸。並且，在說明書中所表示的數值，可以包括所述數值以及在本領域中具有通常知識者可接受的偏差範圍內的偏差值。上述偏差值可以是於製造過程或量測過程的一個或多個標準偏差（Standard Deviation），或是於計算或換算過程因採用位數的多寡、四捨五入或經由誤差傳遞（Error Propagation）等其他因素所產生的計算誤差。另外，除非有特別的說明，使用的方向用語是用來說明並非用來限制本發明。並且，為了清楚表示不同圖式之間的方向關係，於部份的圖示中示例性以卡氏座標系統（Cartesian coordinate system；即XYZ直角坐標系統）來表示對應的方向，但本發明不以此為限。In the drawings, a part of patterns may be exaggerated or reduced in size in one direction for clarity. In addition, the numerical values expressed in the specification may include the above numerical values and deviations within the range of deviations acceptable to those skilled in the art. The above-mentioned deviation value can be one or more standard deviations (Standard Deviation) in the manufacturing process or measurement process, or other factors such as the number of digits used, rounding, or error propagation (Error Propagation) in the calculation or conversion process resulting calculation error. In addition, unless otherwise specified, the directional terms used are for the purpose of illustration and are not intended to limit the invention. Moreover, in order to clearly show the directional relationship between different drawings, the Cartesian coordinate system (Cartesian coordinate system; ie XYZ Cartesian coordinate system) is used to represent the corresponding directions in some diagrams, but the present invention does not use This is the limit.

應當理解，雖然在此的術語“第一”、“第二”和“第三”或是“一”和“另一”等可以用於描述不同的元素，但這些元素不應被這些術語限制。這些術語僅用於將元素彼此區分。例如，第一元素可以被稱為第二元素，並且，類似地，第二元素可以被稱為第一元素而不背離本發明構思的保護範圍。It should be understood that although the terms "first", "second" and "third" or "one" and "another" etc. herein may be used to describe various elements, these elements should not be limited by these terms . These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element without departing from the scope of the present inventive concept.

除非另外定義，在此使用的所有術語(包括技術術語和科學術語)具有與本發明所屬技術領域中具有通常知識者 通常理解相同的含義。還將理解的是，術語(諸如在通常使用的字典中定義的那些)應解釋為具有與在相關技術背景中的含義一致的含義，並不應以理想化或過於正式的意義解釋，除非在此明確這樣定義。Unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will also be understood that terms (such as those defined in commonly used dictionaries) should be interpreted to have meanings consistent with their meanings in the relevant technical context, and should not be interpreted in an idealized or overly formal sense, except in This is clearly defined as such.

在後續的說明中，除非有另外定義，所有的尺寸（如：間距、距離、長度、寬度等）所指的是在半導體元件的佈局設計（layout design）上的尺寸，而非指光罩上的尺寸。舉例而言，若一光罩被設計與製造以應用於縮小四倍的曝光機，則佈局設計中之75奈米（nanometer；nm）尺寸對應到光罩上之對應0.3微米（micrometer；µm）尺寸。又舉例而言，若一光罩被設計與製造以應用於縮小五倍的曝光機，則佈局設計中之80 nm尺寸對應到光罩上之對應0.4 µm尺寸。In the subsequent description, unless otherwise defined, all dimensions (such as: pitch, distance, length, width, etc.) refer to the dimensions on the layout design of the semiconductor element, not on the photomask size of. For example, if a photomask is designed and fabricated for use in a quadruple-scale exposure machine, the 75 nanometer (nanometer; nm) dimension in the layout design corresponds to the corresponding 0.3 micrometer (micrometer; µm) on the photomask size. As another example, if a reticle is designed and fabricated for use in a five-fold downscaler, the 80 nm dimension in the layout design corresponds to the corresponding 0.4 µm dimension on the reticle.

在半導體元件的製造過程中，可以包括微影製程（photolithography process）。微影製程可以包括曝光（exposure）步驟，其包括以一曝光機（可包括步進式曝光機（stepper）或掃描式曝光機（scanner））並藉由光罩以光輻射來曝光基板上的光阻層；然後，於對曝光後的光阻層進行顯影（development）之後，依據光阻層的性質（如：正光阻（positive photoresist）或負光阻（negative photoresist））而可選擇性地藉由蝕刻（etching）/沉積（deposition）及鍍覆（plating）方式，以形成對應的膜圖案（film pattern）。在一實施例中，基於微影製程及/或其他製程條件的解析度極限，前述膜圖案的相鄰兩個之間可以存在一最小線間距（minimum line-and-space distance）（即，相鄰兩個膜圖案之間的距離（space distance；S）與該膜圖案的寬度（line width；L）的總和（L+S）的最小值）配置。前述的最小線間距可以被視為藉由前述曝光機在該製程條件下的對應光罩的最小解析距離；或是，在佈局設計上可以被稱為最小規則（minimum rule）。以可發出193nm光輻射的曝光機為例，其在一最適化（optimized）製程調整的情況下，在所形成的對應膜圖案中，最小線間距可以約為90nm（如：相鄰兩個膜圖案之間的距離（S）約為45nm，且該膜圖案的寬度（L）約為45nm）。In the manufacturing process of semiconductor devices, a photolithography process may be included. The lithography process may include an exposure step, which includes exposing the substrate with light radiation by an exposure machine (which may include a stepper or a scanner) and through a mask. The photoresist layer; then, after developing the exposed photoresist layer, it can be selectively A corresponding film pattern is formed by etching/deposition and plating. In one embodiment, based on the resolution limit of the lithography process and/or other process conditions, there may be a minimum line-and-space distance between two adjacent film patterns (that is, a relative The minimum value of the sum (L+S) of the distance (space distance; S) between two adjacent film patterns and the width (line width; L) of the film pattern is configured. The aforementioned minimum line spacing can be regarded as the minimum resolution distance of the corresponding photomask by the aforementioned exposure machine under the process conditions; or, it can be called the minimum rule in layout design. Taking an exposure machine that can emit 193nm light radiation as an example, in the case of an optimized process adjustment, in the corresponding film pattern formed, the minimum line spacing can be about 90nm (for example: two adjacent films The distance (S) between the patterns is about 45 nm, and the width (L) of the film pattern is about 45 nm).

值得注意的是，前述的“基板”可以意指基板本身或包括基板和在其上形成的預定層或膜的堆疊結構。It should be noted that the aforementioned "substrate" may mean the substrate itself or a stacked structure including the substrate and predetermined layers or films formed thereon.

圖1是依照本發明的第一實施例的一種光罩的部分示意圖。FIG. 1 is a partial schematic diagram of a photomask according to a first embodiment of the present invention.

請參照圖1，光罩100包括多個主圖案（main pattern）及次解析度圖案（sub-resolution assist feature pattern；SRAF pattern）。多個的主圖案包括相鄰的第一主圖案11及第二主圖案12。也就是說，第一主圖案11及第二主圖案12之間不具有其他相同或相似於主圖案（如：第一主圖案11或第二主圖案12）的圖案。次解析度圖案33位於第一主圖案11及第二主圖案12之間。第一主圖案11的中心及第二主圖案12的中心為主間距d0。主間距d0大於前述的最小解析距離。Referring to FIG. 1 , the photomask 100 includes a plurality of main patterns (main pattern) and sub-resolution assist feature patterns (SRAF patterns). The plurality of main patterns include adjacent first main patterns 11 and second main patterns 12 . That is to say, the first main pattern 11 and the second main pattern 12 do not have other patterns identical or similar to the main pattern (eg: the first main pattern 11 or the second main pattern 12 ). The sub-resolution pattern 33 is located between the first main pattern 11 and the second main pattern 12 . The center of the first main pattern 11 and the center of the second main pattern 12 have a main distance d0. The main distance d0 is greater than the aforementioned minimum resolution distance.

在本實施例中，光罩100的第一主圖案11及第二主圖案12可以為沿著第二方向Y延伸的條狀圖案，但本發明不限於此。在一示例性的半導體元件的製造過程中，光罩100可用於導線圖案（如：後段金屬內連線（Back End of Line Interconnect；BEOL Interconnect）、位元線（Bit Line；BL）或字元線（Word Line；WL）；但不限）的形成，但本發明不限於此。舉例而言，光罩100的第一主圖案11及第二主圖案12可以對應於前述半導體元件的一導線及另一導線。主間距d0為延著第一方向X定義，且第一方向X可以垂直於第二方向Y。In this embodiment, the first main pattern 11 and the second main pattern 12 of the photomask 100 may be striped patterns extending along the second direction Y, but the invention is not limited thereto. In an exemplary manufacturing process of a semiconductor device, the photomask 100 can be used for a conductor pattern (such as: Back End of Line Interconnect (BEOL Interconnect), bit line (Bit Line; BL) or character Line (Word Line; WL); but not limited to), but the present invention is not limited thereto. For example, the first main pattern 11 and the second main pattern 12 of the photomask 100 may correspond to a lead and another lead of the aforementioned semiconductor device. The main distance d0 is defined along the first direction X, and the first direction X may be perpendicular to the second direction Y.

在一實施例中，在第一方向X上，次解析度圖案33與第一主圖案11之間的距離d01基本上相同於次解析度圖案33與第二主圖案12之間的距離d02。也就是說，次解析度圖案33可以位於第一主圖案11與第二主圖案12的中間。In one embodiment, in the first direction X, the distance d01 between the sub-resolution pattern 33 and the first main pattern 11 is substantially the same as the distance d02 between the sub-resolution pattern 33 and the second main pattern 12 . That is to say, the sub-resolution pattern 33 may be located in the middle of the first main pattern 11 and the second main pattern 12 .

在一實施例中，主圖案與次解析度圖案可以具有相同的相位（phase）。在後續的說明中，為求簡單表示，藉由具有相同相位的主圖案與次解析度圖案的光罩所進行的微影製程（photolithography process）可以簡稱為：正相次解析度圖案（positive SRAF）微影製程。In an embodiment, the main pattern and the sub-resolution pattern may have the same phase. In the subsequent description, for the sake of simplicity, the photolithography process performed by the mask with the main pattern and the sub-resolution pattern having the same phase can be referred to as: positive SRAF ) lithography process.

在一實施例中，主圖案與次解析度圖案可以具有相反的相位。在後續的說明中，為求簡單表示，藉由具有相反相位的主圖案與次解析度圖案的光罩所進行的微影製程可以簡稱為：負相次解析度圖案（negative SRAF）微影製程。In one embodiment, the main pattern and the sub-resolution pattern may have opposite phases. In the subsequent description, for the sake of simplicity, the photolithography process performed by the mask with the main pattern and the sub-resolution pattern having opposite phases can be referred to as: negative sub-resolution pattern (negative SRAF) photolithography process .

在一實施例中，以藉由193nm光輻射照射的正相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於或等於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於135nm且小於195nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有一個次解析度圖案（如：圖1中的次解析度圖案33）的光罩100。In one embodiment, taking the positive phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, when the width (L) of the corresponding film pattern is greater than or equal to 45nm, and between two adjacent film patterns In the case where the distance (S) is greater than or equal to 135nm and less than 195nm, there may be a sub-resolution pattern between the first main pattern 11 and the second main pattern 12 (such as the sub-resolution pattern in Figure 1 pattern 33) of the photomask 100.

在一實施例中，以藉由193nm光輻射照射的正相次解析度圖案微影製程為例，一個主圖案的寬度（如：寬度w11或寬度w12中的其中之一）與相鄰兩個主圖案之間的距離d1的總和（即：w11+d1；或，w12+d1）大約等於主間距d0。一個主圖案的寬度（如：寬度w11或寬度w12中的其中之一）與次解析度圖案的寬度（如：寬度w33）的比值（即：w11/w33；或，w12/w33）可以大於或等於2.5；且/或相鄰兩個主圖案之間的距離d1與次解析度圖案的寬度（如：寬度w33）的比值（即：d1/w33）可以介於6.75至9.75。In one embodiment, taking the positive-phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, the width of one main pattern (for example: one of the width w11 or the width w12) is the same as that of two adjacent The sum of the distances d1 between the main patterns (ie: w11+d1; or, w12+d1) is approximately equal to the main pitch d0. The ratio (ie: w11/w33; or, w12/w33) of the width of a main pattern (eg, one of width w11 or width w12) to the width of the sub-resolution pattern (eg: width w33) may be greater than or It is equal to 2.5; and/or the ratio (ie: d1/w33) of the distance d1 between two adjacent main patterns to the width of the sub-resolution pattern (eg: width w33 ) can range from 6.75 to 9.75.

在一實施例中，以藉由193nm光輻射照射的負相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於130nm且小於185nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有一個次解析度圖案（如：圖1中的次解析度圖案33）的光罩100。In one embodiment, taking the negative phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, the width (L) of the corresponding film pattern is greater than 45nm, and the distance between two adjacent film patterns (S) In the case of greater than or equal to 130nm and less than 185nm, there may be a sub-resolution pattern between the first main pattern 11 and the second main pattern 12 (such as the sub-resolution pattern 33 in FIG. 1 ) of the mask 100.

在一實施例中，以藉由193nm光輻射照射的負相次解析度圖案微影製程為例，一個主圖案的寬度（如：寬度w11或寬度w12中的其中之一）與相鄰兩個主圖案之間的距離d1的總和（即：w11+d1；或，w12+d1）大約等於主間距d0。一個主圖案的寬度（如：寬度w11或寬度w12中的其中之一）與次解析度圖案的寬度（如：寬度w33）的比值（即：w11/w33；或，w12/w33）可以大於或等於2.5；且/或相鄰兩個主圖案之間的距離d1與次解析度圖案的寬度（如：寬度w33）的比值（即：d1/w33）可以介於6.5至9.25。In one embodiment, taking the negative phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, the width of one main pattern (for example: one of the width w11 or the width w12) is the same as that of two adjacent The sum of the distances d1 between the main patterns (ie: w11+d1; or, w12+d1) is approximately equal to the main pitch d0. The ratio (ie: w11/w33; or, w12/w33) of the width of a main pattern (eg, one of width w11 or width w12) to the width of the sub-resolution pattern (eg: width w33) may be greater than or It is equal to 2.5; and/or the ratio (ie: d1/w33) of the distance d1 between two adjacent main patterns to the width of the sub-resolution pattern (eg: width w33 ) can range from 6.5 to 9.25.

圖2是依照本發明的第二實施例的一種光罩的部分示意圖。在本實施例的光罩200與前述實施例的光罩100相似，其類似的圖案以相同的標號表示，且具有類似的定義、關係、功能或應用方式，並省略描述。FIG. 2 is a partial schematic diagram of a photomask according to a second embodiment of the present invention. The photomask 200 in this embodiment is similar to the photomask 100 in the previous embodiments, and the similar patterns are denoted by the same reference numerals, and have similar definitions, relationships, functions or applications, and descriptions are omitted.

請參照圖2，光罩200包括第一主圖案11、第二主圖案12、第一次解析度圖案32以及第二次解析度圖案38。在第一方向X上，前述的圖案依序可以為：第一主圖案11、第一次解析度圖案32、第二次解析度圖案38及第二主圖案12。Referring to FIG. 2 , the mask 200 includes a first main pattern 11 , a second main pattern 12 , a first resolution pattern 32 and a second resolution pattern 38 . In the first direction X, the aforesaid patterns may be sequentially: the first main pattern 11 , the first resolution pattern 32 , the second resolution pattern 38 and the second main pattern 12 .

在一實施例中，在第一方向X上，第一次解析度圖案32與第一主圖案11之間的距離d01基本上相同於第二次解析度圖案38與第二主圖案12之間的距離d02。也就是說，在一封閉範圍內（如：圖2中所繪示的範圍），位於第一主圖案11與第二主圖案12中間的中心線C的相對兩側的對應次解析度圖案32、38/主圖案11、12可以對稱配置。In one embodiment, in the first direction X, the distance d01 between the first resolution pattern 32 and the first main pattern 11 is substantially the same as that between the second resolution pattern 38 and the second main pattern 12 The distance d02. That is to say, within a closed range (such as the range shown in FIG. 2 ), the corresponding sub-resolution patterns 32 located on opposite sides of the central line C between the first main pattern 11 and the second main pattern 12 , 38/The main patterns 11, 12 can be arranged symmetrically.

在一實施例中，次解析度圖案32的寬度w32及/或次解析度圖案38的寬度w38可以約等於前述實施例中的次解析度圖案33的寬度w33。In one embodiment, the width w32 of the sub-resolution pattern 32 and/or the width w38 of the sub-resolution pattern 38 may be approximately equal to the width w33 of the sub-resolution pattern 33 in the foregoing embodiments.

在一實施例中，相鄰的次解析度圖案與主圖案之間的距離大於前述的次解析度圖案的寬度。舉例而言，距離d01大於寬度w32，且/或距離d02大於寬度w38。In one embodiment, the distance between adjacent sub-resolution patterns and the main pattern is greater than the width of the aforementioned sub-resolution patterns. For example, the distance d01 is greater than the width w32, and/or the distance d02 is greater than the width w38.

在一實施例中，相鄰的次解析度圖案與主圖案之間的距離（如：距離d01或距離d02）與對應的次解析度圖案的寬度的比值可以介於2.75至3。舉例而言，次解析度圖案32與主圖案11之間的距離d01與次解析度圖案32的寬度w32的比值（即：d01/w32）可以介於2.75至3；且/或次解析度圖案38與主圖案12之間的距離d02與次解析度圖案38的寬度w38的比值（即：d02/w32）可以介於2.75至3。在一實施例中，前述的比值可以約為2.875。In an embodiment, the ratio of the distance between adjacent sub-resolution patterns and the main pattern (eg, the distance d01 or the distance d02 ) to the width of the corresponding sub-resolution pattern may range from 2.75 to 3. For example, the ratio of the distance d01 between the sub-resolution pattern 32 and the main pattern 11 to the width w32 of the sub-resolution pattern 32 (ie: d01/w32) may range from 2.75 to 3; and/or the sub-resolution pattern The ratio of the distance d02 between 38 and the main pattern 12 to the width w38 of the sub-resolution pattern 38 (ie: d02/w32) may range from 2.75 to 3. In one embodiment, the aforementioned ratio may be approximately 2.875.

在一實施例中，以藉由193nm光輻射照射的正相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於或等於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於195nm且小於250nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有兩個次解析度圖案（如：次解析度圖案32與次解析度圖案38）的光罩200。In one embodiment, taking the positive phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, when the width (L) of the corresponding film pattern is greater than or equal to 45nm, and between two adjacent film patterns When the distance (S) is greater than or equal to 195nm and less than 250nm, there may be two sub-resolution patterns between the first main pattern 11 and the second main pattern 12 (for example: sub-resolution pattern 32 and sub-resolution pattern 38) of the reticle 200.

在一實施例中，以藉由193nm光輻射照射的負相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於185nm且小於235nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有兩個次解析度圖案（如：次解析度圖案32與次解析度圖案38）的光罩200。In one embodiment, taking the negative phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, the width (L) of the corresponding film pattern is greater than 45nm, and the distance between two adjacent film patterns (S) In the case of greater than or equal to 185nm and less than 235nm, there may be two sub-resolution patterns between the first main pattern 11 and the second main pattern 12 (for example: the sub-resolution pattern 32 and the sub-resolution pattern degree pattern 38) of the reticle 200.

圖3是依照本發明的第三實施例的一種光罩的部分示意圖。在本實施例的光罩300與前述實施例的光罩100或200相似，其類似的圖案以相同的標號表示，且具有類似的定義、關係、功能或應用方式，並省略描述。FIG. 3 is a partial schematic diagram of a photomask according to a third embodiment of the present invention. The photomask 300 in this embodiment is similar to the photomask 100 or 200 in the foregoing embodiments, and the similar patterns are denoted by the same reference numerals, and have similar definitions, relationships, functions or applications, and descriptions are omitted.

請參照圖3，光罩300包括第一主圖案11、第二主圖案12、第一次解析度圖案31、第二次解析度圖案33以及第三次解析度圖案35。在第一方向X上，前述的圖案依序可以為：第一主圖案11、第一次解析度圖案31、第二次解析度圖案33、第三次解析度圖案35及第二主圖案12。Referring to FIG. 3 , the mask 300 includes a first main pattern 11 , a second main pattern 12 , a first resolution pattern 31 , a second resolution pattern 33 and a third resolution pattern 35 . In the first direction X, the above-mentioned patterns can be sequentially: the first main pattern 11, the first resolution pattern 31, the second resolution pattern 33, the third resolution pattern 35 and the second main pattern 12 .

在一實施例中，在第一方向上X，第一次解析度圖案31與第一主圖案11之間的距離d01基本上相同於第三次解析度圖案35與第二主圖案12之間的距離d02。In one embodiment, in the first direction X, the distance d01 between the first resolution pattern 31 and the first main pattern 11 is substantially the same as that between the third resolution pattern 35 and the second main pattern 12 The distance d02.

在一實施例中，在第一方向上X，第二次解析度圖案33與第一主圖案11之間的距離d03基本上相同於第二次解析度圖案33與第二主圖案12之間的距離d04。也就是說，第二次解析度圖案33可以位於第一主圖案11與第二主圖案12的中間。In one embodiment, in the first direction X, the distance d03 between the second sub-resolution pattern 33 and the first main pattern 11 is substantially the same as that between the second sub-resolution pattern 33 and the second main pattern 12 The distance d04. That is to say, the second sub-resolution pattern 33 may be located in the middle of the first main pattern 11 and the second main pattern 12 .

在一封閉範圍內（如：圖3中所繪示的範圍），位於第一主圖案11與第二主圖案12中間的中心線C的相對兩側的對應次解析度圖案31、35/主圖案11、12可以對稱配置。Within a closed range (such as the range shown in FIG. 3 ), the corresponding sub-resolution patterns 31 , 35 /main The patterns 11, 12 may be arranged symmetrically.

在一實施例中，相鄰的兩個次解析度圖案（如：相鄰的第一次解析度圖案31及第二次解析度圖案33；或，相鄰的第二次解析度圖案33及第三次解析度圖案35）之間的距離大於相鄰的次解析度圖案與主圖案之間的距離。舉例而言，距離d13大於距離d01且/或距離d35大於距離d02。In one embodiment, adjacent two sub-resolution patterns (such as: adjacent first-resolution patterns 31 and second-resolution patterns 33; or adjacent second-resolution patterns 33 and The distance between the third sub-resolution patterns 35 ) is greater than the distance between adjacent sub-resolution patterns and the main pattern. For example, the distance d13 is greater than the distance d01 and/or the distance d35 is greater than the distance d02.

在一實施例中，次解析度圖案31的寬度w31、次解析度圖案33的寬度w33及/或次解析度圖案35的寬度w35可以約等於光罩100中的次解析度圖案33的寬度w33。In one embodiment, the width w31 of the sub-resolution pattern 31 , the width w33 of the sub-resolution pattern 33 and/or the width w35 of the sub-resolution pattern 35 may be approximately equal to the width w33 of the sub-resolution pattern 33 in the mask 100 .

在一實施例中，相鄰的次解析度圖案與主圖案之間的距離（如：距離d01或距離d02）與對應的次解析度圖案的寬度的比值可以介於2.75至3。舉例而言，次解析度圖案31與主圖案11之間的距離d01與次解析度圖案31的寬度w31的比值（即：d01/w31）可以介於2.75至3；且/或次解析度圖案35與主圖案12之間的距離d02與次解析度圖案35的寬度w35的比值（即：d02/w35）可以介於2.75至3。在一實施例中，前述的比值可以約為2.875。In an embodiment, the ratio of the distance between adjacent sub-resolution patterns and the main pattern (eg, the distance d01 or the distance d02 ) to the width of the corresponding sub-resolution pattern may range from 2.75 to 3. For example, the ratio of the distance d01 between the sub-resolution pattern 31 and the main pattern 11 to the width w31 of the sub-resolution pattern 31 (ie: d01/w31) may range from 2.75 to 3; and/or the sub-resolution pattern The ratio of the distance d02 between 35 and the main pattern 12 to the width w35 of the sub-resolution pattern 35 (ie: d02/w35 ) may range from 2.75 to 3. In one embodiment, the aforementioned ratio may be approximately 2.875.

在一實施例中，以藉由193nm光輻射照射的正相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於或等於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於250nm且小於365nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有三個次解析度圖案（如：次解析度圖案31、次解析度圖案33與次解析度圖案35）的光罩300。In one embodiment, taking the positive phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, when the width (L) of the corresponding film pattern is greater than or equal to 45nm, and between two adjacent film patterns When the distance (S) is greater than or equal to 250nm and less than 365nm, there may be three sub-resolution patterns between the first main pattern 11 and the second main pattern 12 (such as: sub-resolution pattern 31, sub-resolution pattern 33 and sub-resolution pattern 35 ) of the mask 300 .

在一實施例中，以藉由193nm光輻射照射的負相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於235nm且小於365nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有三個次解析度圖案（如：次解析度圖案31、次解析度圖案33與次解析度圖案35）的光罩300。In one embodiment, taking the negative phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, the width (L) of the corresponding film pattern is greater than 45nm, and the distance between two adjacent film patterns (S) In the case of greater than or equal to 235nm and less than 365nm, there may be three sub-resolution patterns between the first main pattern 11 and the second main pattern 12 (such as: sub-resolution pattern 31, sub-resolution The photomask 300 of the high-resolution pattern 33 and the sub-resolution pattern 35).

圖4是依照本發明的第四實施例的一種光罩的部分示意圖。在本實施例的光罩400與前述實施例的光罩100、200或300相似，其類似的圖案以相同的標號表示，且具有類似的定義、關係、功能或應用方式，並省略描述。FIG. 4 is a partial schematic diagram of a photomask according to a fourth embodiment of the present invention. The photomask 400 in this embodiment is similar to the photomask 100 , 200 or 300 in the previous embodiments, and the similar patterns are denoted by the same reference numerals, and have similar definitions, relationships, functions or applications, and descriptions are omitted.

請參照圖4，光罩包括第一主圖案11、第二主圖案12、第一次解析度圖案32、第二次解析度圖案34、第三次解析度圖案36以及第四次解析度圖案38。在第一方向X上，前述的圖案依序可以為：第一主圖案11、第一次解析度圖案32、第二次解析度圖案34、第三次解析度圖案36、第四次解析度圖案38及第二主圖案12。Please refer to FIG. 4, the mask includes a first main pattern 11, a second main pattern 12, a first resolution pattern 32, a second resolution pattern 34, a third resolution pattern 36 and a fourth resolution pattern 38. In the first direction X, the above-mentioned patterns can be sequentially: the first main pattern 11, the first resolution pattern 32, the second resolution pattern 34, the third resolution pattern 36, the fourth resolution pattern pattern 38 and the second main pattern 12.

在一實施例中，在第一方向X上，第一次解析度圖案32與第一主圖案11之間的距離d01基本上相同於第四次解析度圖案38與第二主圖案12之間的距離d02，且第二次解析度圖案34與第一主圖案11之間的距離d03基本上相同於第三次解析度圖案36與第二主圖案12之間的距離d04。也就是說，在一封閉範圍內（如：圖4中所繪示的範圍），位於第一主圖案11與第二主圖案12中間的中心線C的相對兩側的對應次解析度圖案32、34、36、38/主圖案11、12可以對稱配置。In one embodiment, in the first direction X, the distance d01 between the first resolution pattern 32 and the first main pattern 11 is substantially the same as that between the fourth resolution pattern 38 and the second main pattern 12 The distance d02 between the second sub-resolution pattern 34 and the first main pattern 11 is substantially the same as the distance d04 between the third sub-resolution pattern 36 and the second main pattern 12 . That is to say, within a closed range (such as the range shown in FIG. 4 ), the corresponding sub-resolution patterns 32 located on opposite sides of the central line C between the first main pattern 11 and the second main pattern 12 , 34, 36, 38/main patterns 11, 12 can be arranged symmetrically.

在一實施例中，相鄰的兩個次解析度圖案之間的距離大於相鄰的次解析度圖案與主圖案之間的距離。舉例而言，距離d24大於距離d01，且/或距離d68大於距離d02。In one embodiment, the distance between two adjacent sub-resolution patterns is larger than the distance between the adjacent sub-resolution patterns and the main pattern. For example, the distance d24 is greater than the distance d01, and/or the distance d68 is greater than the distance d02.

在一實施例中，與主圖案不相鄰的相鄰的兩個次解析度圖案（如：第二次解析度圖案34及第三次解析度圖案36）之間的距離大於其中之一與主圖案相鄰的相鄰的兩個次解析度圖案之間的距離。舉例而言，距離d46大於距離d24，且/或距離d46大於距離d68。In one embodiment, the distance between two adjacent sub-resolution patterns (such as: the second sub-resolution pattern 34 and the third sub-resolution pattern 36 ) that are not adjacent to the main pattern is greater than one of them and The distance between two adjacent sub-resolution patterns adjacent to the main pattern. For example, the distance d46 is greater than the distance d24, and/or the distance d46 is greater than the distance d68.

在一實施例中，次解析度圖案32的寬度w32、次解析度圖案34的寬度w34、次解析度圖案36的寬度w36及/或次解析度圖案38的寬度w38可以約等於前述實施例中的次解析度圖案33的寬度w33。In one embodiment, the width w32 of the sub-resolution pattern 32 , the width w34 of the sub-resolution pattern 34 , the width w36 of the sub-resolution pattern 36 and/or the width w38 of the sub-resolution pattern 38 may be approximately equal to those in the foregoing embodiments. The width w33 of the sub-resolution pattern 33 .

在一實施例中，相鄰的次解析度圖案與主圖案之間的距離與次解析度圖案的寬度的比值可以介於2.75至3（即，d01/w32或d02/w38）。在一實施例中，前述的比值可以約為2.875。In one embodiment, the ratio of the distance between adjacent sub-resolution patterns and the main pattern to the width of the sub-resolution pattern may be 2.75 to 3 (ie, d01/w32 or d02/w38). In one embodiment, the aforementioned ratio may be approximately 2.875.

在一實施例中，其中之一與主圖案相鄰的相鄰的兩個次解析度圖案之間的距離與解析度圖案的寬度的比值（即，d24/w32、d24/w34、d68/w36或d68/w38）可以介於3.4至3.6。在一實施例中，前述的比值可以約為3.5。In one embodiment, the ratio of the distance between two adjacent sub-resolution patterns adjacent to the main pattern to the width of the resolution pattern (ie, d24/w32, d24/w34, d68/w36 or d68/w38) can be between 3.4 and 3.6. In one embodiment, the aforementioned ratio may be about 3.5.

在一實施例中，其中之一與主圖案相鄰的相鄰的兩個次解析度圖案之間的距離與相鄰的次解析度圖案與主圖案之間的距離的比值（即，d24/d01或d68/d02）可以介於1.15至1.28。在一實施例中，前述的比值可以約為1.21至1.22。In one embodiment, the ratio of the distance between two adjacent sub-resolution patterns, one of which is adjacent to the main pattern, to the distance between the adjacent sub-resolution patterns and the main pattern (ie, d24/ d01 or d68/d02) can be between 1.15 and 1.28. In an embodiment, the aforementioned ratio may be about 1.21 to 1.22.

在一實施例中，以藉由193nm光輻射照射的正相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於或等於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於400nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有四個次解析度圖案（如：次解析度圖案32、次解析度圖案34、次解析度圖案36與次解析度圖案38）的光罩。In one embodiment, taking the positive phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, when the width (L) of the corresponding film pattern is greater than or equal to 45nm, and between two adjacent film patterns In the case where the distance (S) is greater than or equal to 400nm, there may be four sub-resolution patterns between the first main pattern 11 and the second main pattern 12 (eg: sub-resolution pattern 32, sub-resolution pattern 34, sub-resolution pattern 36, and sub-resolution pattern 38).

在一實施例中，以藉由193nm光輻射照射的負相次解析度圖案微影製程為例，在對應的膜圖案的寬度（L）大於45nm，且相鄰兩個膜圖案之間的距離（S）大於或等於365nm的情況下，所使用的可以是第一主圖案11及第二主圖案12之間具有四個次解析度圖案（如：次解析度圖案32、次解析度圖案34、次解析度圖案36與次解析度圖案38）的光罩。In one embodiment, taking the negative phase sub-resolution pattern lithography process irradiated by 193nm optical radiation as an example, the width (L) of the corresponding film pattern is greater than 45nm, and the distance between two adjacent film patterns (S) In the case of greater than or equal to 365nm, there may be four sub-resolution patterns between the first main pattern 11 and the second main pattern 12 (such as: sub-resolution pattern 32, sub-resolution pattern 34 , sub-resolution pattern 36 and sub-resolution pattern 38) mask.

基於上述實施例的光罩100、200、300、400，可以歸類如下：在微影製程中，藉由一曝光機在解析度極限下可以形成相鄰且分離的兩個膜圖案，而該兩個膜圖案所對應的兩個光罩圖案中，兩個光罩圖案之間的距離可以被稱為最小解析距離。本發明一實施例的光罩包括相鄰的第一主圖案及第二主圖案。第一主圖案的中心及第二主圖案的中心為主間距。第一主間距大於前述的最小解析距離。第一主圖案及第二主圖案之間具有N個的次解析度圖案。從第一主圖案向第二主圖案的方向依序為第一主圖案、第1個次解析度圖案…第N個次解析度圖案及第二主圖案，其中N≧1。進一步，第1個次解析度圖案與第一主圖案之間的距離可以小於兩倍的前述最小解析距離，且第N個次解析度圖案與第二主圖案之間的距離可以小於兩倍的前述最小解析距離。更進一步，若N≧M≧2，則第M個次解析度圖案與第M-1個次解析度圖案之間的距離可以小於或等於前述最小解析距離。如此一來，光罩在微影製程的應用中可以具有較佳的製程裕度（process window）。除此之外，在光罩圖案的設計過程中，可以直接地或間接地套用前述次解析度圖案的規則及對應的配置方式。如此一來，可以降低模擬的時間及/或次數，而可以使半導體元件的製造過程（如：用於製造其的光罩設計過程）較有效率。The photomasks 100, 200, 300, and 400 based on the above-mentioned embodiments can be classified as follows: in the lithography process, two adjacent and separated film patterns can be formed by an exposure machine under the resolution limit, and the Among the two mask patterns corresponding to the two film patterns, the distance between the two mask patterns can be called the minimum resolution distance. A photomask according to an embodiment of the present invention includes adjacent first main patterns and second main patterns. The center of the first main pattern and the center of the second main pattern are main intervals. The first main distance is greater than the aforementioned minimum resolution distance. There are N sub-resolution patterns between the first main pattern and the second main pattern. The direction from the first main pattern to the second main pattern is the first main pattern, the first sub-resolution pattern...the Nth sub-resolution pattern and the second main pattern, wherein N≧1. Further, the distance between the first sub-resolution pattern and the first main pattern may be less than twice the aforementioned minimum resolution distance, and the distance between the Nth sub-resolution pattern and the second main pattern may be less than twice The aforementioned minimum resolution distance. Furthermore, if N≧M≧2, the distance between the Mth sub-resolution pattern and the M−1th sub-resolution pattern may be less than or equal to the aforementioned minimum resolution distance. In this way, the photomask can have a better process window in the application of the photolithography process. In addition, in the process of designing the mask pattern, the aforementioned rules and corresponding configurations of sub-resolution patterns can be applied directly or indirectly. In this way, the time and/or times of simulation can be reduced, and the manufacturing process of the semiconductor device (eg, the mask design process for manufacturing it) can be made more efficient.

圖5是依照本發明的第五實施例的一種光罩的部分示意圖。在本實施例的光罩500與前述實施例的光罩100相似，其類似的圖案以相同的標號表示，且具有類似的定義、關係、功能或應用方式，並省略描述。FIG. 5 is a partial schematic diagram of a photomask according to a fifth embodiment of the present invention. The photomask 500 in this embodiment is similar to the photomask 100 in the previous embodiments, and the similar patterns are denoted by the same reference numerals, and have similar definitions, relationships, functions or applications, and descriptions are omitted.

請參照圖5，光罩500包括第一主圖案11、第二主圖案12、第三主圖案21、第四主圖案22、第一次解析度圖案33、第二次解析度圖案43、第三次解析度圖案53以及第四次解析度圖案63。5, the mask 500 includes a first main pattern 11, a second main pattern 12, a third main pattern 21, a fourth main pattern 22, a first resolution pattern 33, a second resolution pattern 43, The third resolution pattern 53 and the fourth resolution pattern 63 .

在一實施例中，光罩500中的圖案設計方式可以類似於光罩100中的圖案設計的二維（two-dimensional；2D）方式。In one embodiment, the pattern design in the photomask 500 may be similar to the two-dimensional (2D) pattern design in the photomask 100 .

舉例而言，在一第一方向X上，光罩500中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12的配置方式可以相同或相似於光罩100中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in a first direction X, the arrangement of the first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in the photomask 500 may be the same or similar to that in the photomask 100 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

舉例而言，在另一第一方向X上，光罩500中依序的第三主圖案21、第二次解析度圖案43及第四主圖案22的配置方式可以相同或相似於光罩100中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in another first direction X, the arrangement of the third main pattern 21 , the second sub-resolution pattern 43 and the fourth main pattern 22 in the photomask 500 may be the same as or similar to that of the photomask 100 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

舉例而言，在一第二方向Y上，光罩500中依序的第三主圖案21、第三次解析度圖案53及第一主圖案11的配置方式可以相同或相似於光罩100中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in a second direction Y, the arrangement of the third main pattern 21 , the third sub-resolution pattern 53 and the first main pattern 11 in the photomask 500 may be the same or similar to that in the photomask 100 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

舉例而言，在另一第二方向Y上，光罩500中依序的第四主圖案22、第四次解析度圖案63及第二主圖案12的配置方式可以相同或相似於光罩100中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in another second direction Y, the arrangement of the fourth main pattern 22 , the fourth sub-resolution pattern 63 and the second main pattern 12 in the photomask 500 may be the same as or similar to that of the photomask 100 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

在一示例性的半導體元件的製造過程中，光罩500可用於半導體層（如：通道（channel）層）、孔洞（via/hole）的形成，但本發明不限於此。In an exemplary manufacturing process of a semiconductor device, the photomask 500 may be used to form a semiconductor layer (such as a channel layer) and a via/hole, but the invention is not limited thereto.

圖6是依照本發明的第六實施例的一種光罩的部分示意圖。在本實施例的光罩600與前述實施例的光罩200或500相似，其類似的圖案以相同的標號表示，且具有類似的定義、關係、功能或應用方式，並省略描述。FIG. 6 is a partial schematic diagram of a photomask according to a sixth embodiment of the present invention. The photomask 600 in this embodiment is similar to the photomask 200 or 500 in the previous embodiments, and the similar patterns are denoted by the same reference numerals, and have similar definitions, relationships, functions or applications, and descriptions are omitted.

請參照圖6，光罩600包括第一主圖案11、第二主圖案12、第三主圖案21、第四主圖案22、第一次解析度圖案32、第二次解析度圖案38、第三次解析度圖案42、第四次解析度圖案48、第五次解析度圖案52、第六次解析度圖案58、第七次解析度圖案62以及第八次解析度圖案68。Please refer to FIG. 6, the mask 600 includes a first main pattern 11, a second main pattern 12, a third main pattern 21, a fourth main pattern 22, a first resolution pattern 32, a second resolution pattern 38, The third resolution pattern 42 , the fourth resolution pattern 48 , the fifth resolution pattern 52 , the sixth resolution pattern 58 , the seventh resolution pattern 62 and the eighth resolution pattern 68 .

在一實施例中，光罩600中的圖案設計方式可以類似於光罩200中的圖案設計的二維方式。In an embodiment, the patterning in the reticle 600 may be designed in a two-dimensional manner similar to the patterning in the reticle 200 .

舉例而言，在一第一方向X上，光罩600中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12的配置方式可以相同或相似於光罩200中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in a first direction X, the arrangement of the first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in the mask 600 may be the same or similar to that in the mask 200 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

舉例而言，在另一第一方向X上，光罩600中依序的第三主圖案21、第二次解析度圖案43及第四主圖案22的配置方式可以相同或相似於光罩200中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in another first direction X, the arrangement of the third main pattern 21 , the second sub-resolution pattern 43 and the fourth main pattern 22 in the photomask 600 may be the same or similar to that of the photomask 200 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

舉例而言，在一第二方向Y上，光罩600中依序的第三主圖案21、第三次解析度圖案53及第一主圖案11的配置方式可以相同或相似於光罩200中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in a second direction Y, the arrangement of the third main pattern 21 , the third sub-resolution pattern 53 and the first main pattern 11 in the photomask 600 may be the same or similar to that in the photomask 200 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

舉例而言，在另一第二方向Y上，光罩600中依序的第四主圖案22、第四次解析度圖案63及第二主圖案12的配置方式可以相同或相似於光罩200中依序的第一主圖案11、第一次解析度圖案33及第二主圖案12。For example, in another second direction Y, the arrangement of the fourth main pattern 22 , the fourth sub-resolution pattern 63 and the second main pattern 12 in the photomask 600 may be the same or similar to that of the photomask 200 The first main pattern 11 , the first resolution pattern 33 and the second main pattern 12 in sequence.

前述圖式中的光罩圖案可以藉由適宜的排列及/或組合而成為另一未繪示的圖式中所呈現的光罩圖案的一部分。另外，在不脫離本發明的情況下，還可以添加其他的圖案；或是，基於前述圖式中的光罩圖案進行適當地延伸。換句話說，在一未繪示的圖式中，光罩圖案的某一區域或某一部分可以是前述任意的一圖式；或是，在本發明所述的規則下，進行適當地延伸。The photomask patterns in the aforementioned figures can be part of the photomask patterns presented in another not-shown figure through proper arrangement and/or combination. In addition, without departing from the present invention, other patterns can also be added; or, appropriate extensions can be made based on the mask patterns in the foregoing figures. In other words, in an unillustrated pattern, a certain region or a certain part of the mask pattern can be any one of the aforementioned patterns; or, it can be properly extended under the rules described in the present invention.

綜上所述，本發明的光罩具有對應的次解析度圖案，因此，其在半導體元件的製造過程中可以具有較佳的製程裕度。並且，藉由前述次解析度圖案的規則及對應的配置方式，可以降低模擬的時間及/或次數。因此，可以使半導體元件的製造過程較有效率。To sum up, the photomask of the present invention has corresponding sub-resolution patterns, so it can have a better process margin in the manufacturing process of semiconductor devices. Moreover, the time and/or times of simulation can be reduced by the rules and corresponding arrangement of the aforementioned sub-resolution patterns. Therefore, the manufacturing process of the semiconductor element can be made more efficient.

100、200、300、400、500、600:光罩 11、12、21、22:主圖案 31、32、33、34、35、36、38、42、43、48、52、53、58、62、63、68:次解析度圖案 d0:主間距 d1、d01、d02、d03、d04、d13、d24、d35、d46、d68:距離 w11、w12、w31、w32、w33、w34、w35、w36、w38:寬度 C:中心線 X、Y、Z:方向 100, 200, 300, 400, 500, 600: mask 11, 12, 21, 22: main pattern 31, 32, 33, 34, 35, 36, 38, 42, 43, 48, 52, 53, 58, 62, 63, 68: sub-resolution patterns d0: main spacing d1, d01, d02, d03, d04, d13, d24, d35, d46, d68: distance w11, w12, w31, w32, w33, w34, w35, w36, w38: width C: Centerline X, Y, Z: direction

圖1是依照本發明的第一實施例的一種光罩的部分示意圖。 圖2是依照本發明的第二實施例的一種光罩的部分示意圖。 圖3是依照本發明的第三實施例的一種光罩的部分示意圖。 圖4是依照本發明的第四實施例的一種光罩的部分示意圖。 圖5是依照本發明的第五實施例的一種光罩的部分示意圖。 圖6是依照本發明的第六實施例的一種光罩的部分示意圖。 FIG. 1 is a partial schematic diagram of a photomask according to a first embodiment of the present invention. FIG. 2 is a partial schematic diagram of a photomask according to a second embodiment of the present invention. FIG. 3 is a partial schematic diagram of a photomask according to a third embodiment of the present invention. FIG. 4 is a partial schematic diagram of a photomask according to a fourth embodiment of the present invention. FIG. 5 is a partial schematic diagram of a photomask according to a fifth embodiment of the present invention. FIG. 6 is a partial schematic diagram of a photomask according to a sixth embodiment of the present invention.

100:光罩 100: mask

11、12:主圖案 11, 12: main pattern

33:次解析度圖案 33: sub-resolution patterns

d0:主間距 d0: main spacing

d1、d01、d02:距離 d1, d01, d02: distance

w11、w12、w33:寬度 w11, w12, w33: width

C:中心線 C: Centerline

X、Y、Z:方向 X, Y, Z: direction

Claims (7)

一種光罩，適於以曝光機並藉由所述光罩以對基板上的光阻層進行曝光以製造半導體元件，其中所述曝光機具有最小解析距離，且所述光罩包括：多個的主圖案(main pattern)，包括第一主圖案、第二主圖案及第三主圖案，其中所述第一主圖案及所述第二主圖案於第一方向相鄰，所述第一主圖案及所述第三主圖案於第二方向相鄰，且所述第一方向不平行於所述第二方向；以及多個的次解析度圖案(sub-resolution assist feature pattern；SRAF pattern)，包括至少一個的第一次解析度圖案以及至少一個的第二次解析度圖案，其中所述第一次解析度圖案位於所述第一主圖案及所述第二主圖案之間，且所述第二次解析度圖案位於所述第一主圖案及所述第三主圖案之間，其中：所述第一主圖案的中心及所述第二主圖案的中心為第一主間距；所述第一主圖案的中心及所述第三主圖案的中心為第二主間距；所述第一主間距大於所述最小解析距離；且所述第二主間距大於所述最小解析距離，其中至少一個的所述第一次解析度圖案包括N個的所述第一次解析度圖案，至少一個的所述第二次解析度圖案包括F個的所述第二次解析度圖案，其中N≧1，且F≧1，其中： 第1個的所述第一次解析度圖案與所述第一主圖案相鄰，第1個的所述第一次解析度圖案與所述第一主圖案之間具有第1個的第一次間距，且第1個的所述第一次間距小於兩倍的所述最小解析距離；第N個的所述第一次解析度圖案與所述第二主圖案相鄰，第N個的所述第一次解析度圖案與所述第二主圖案之間具有第N+1個的第一次間距，且第N+1個的所述第一次間距小於兩倍的所述最小解析距離；第1個的所述第二次解析度圖案與所述第一主圖案相鄰，第1個的所述第二次解析度圖案與所述第一主圖案之間具有第1個的第二次間距，且第1個的所述第二次間距小於兩倍的所述最小解析距離；且第F個的所述第二次解析度圖案與所述第三主圖案相鄰，第F個的所述第二次解析度圖案與所述第三主圖案之間具有第F+1個的第二次間距，且第F+1個的所述第二次間距小於兩倍的所述最小解析距離。 A photomask, which is suitable for using an exposure machine to expose a photoresist layer on a substrate to manufacture a semiconductor element, wherein the exposure machine has a minimum resolution distance, and the photomask includes: a plurality of The main pattern (main pattern), including the first main pattern, the second main pattern and the third main pattern, wherein the first main pattern and the second main pattern are adjacent in the first direction, and the first main pattern The pattern and the third main pattern are adjacent in a second direction, and the first direction is not parallel to the second direction; and a plurality of sub-resolution assist feature patterns (SRAF patterns), including at least one first resolution pattern and at least one second resolution pattern, wherein the first resolution pattern is located between the first main pattern and the second main pattern, and the The second sub-resolution pattern is located between the first main pattern and the third main pattern, wherein: the center of the first main pattern and the center of the second main pattern are the first main pitch; The center of the first main pattern and the center of the third main pattern are a second main spacing; the first main spacing is greater than the minimum resolution distance; and the second main spacing is greater than the minimum resolution distance, wherein at least One of the first resolution patterns includes N first resolution patterns, and at least one second resolution pattern includes F second resolution patterns, where N≧ 1, and F≧1, where: The first first resolution pattern is adjacent to the first main pattern, and there is a first first resolution pattern between the first first resolution pattern and the first main pattern. Secondary spacing, and the first first spacing of the first is less than twice the minimum resolution distance; the Nth first resolution pattern is adjacent to the second main pattern, and the Nth first resolution pattern is adjacent to the second main pattern, and the Nth first resolution pattern is adjacent to the second main pattern. There is an N+1th first-time distance between the first-time resolution pattern and the second main pattern, and the N+1-th first-time distance is less than twice the minimum resolution Distance; the first second resolution pattern is adjacent to the first main pattern, and there is a first distance between the first second resolution pattern and the first main pattern The second interval, and the first second interval is less than twice the minimum resolution distance; and the Fth second resolution pattern is adjacent to the third main pattern, the second There is an F+1th second interval between the F second resolution pattern and the third main pattern, and the F+1st second interval is smaller than twice the second interval the minimum resolution distance. 如請求項1所述的光罩，其中所述第1次間距或所述第N+1次間距大於至少一個的所述次解析度圖案的寬度。 The photomask according to claim 1, wherein the 1st pitch or the N+1th pitch is greater than the width of at least one of the sub-resolution patterns. 如請求項1所述的光罩，其中N≧2，且在N個的所述次解析度圖案中，第M個的所述次解析度圖案及第M-1個的所述次解析度圖案彼此相鄰，其中N≧M≧2，第M個的所述次解析度圖 案與第M-1個的所述次解析度圖案之間具有第M次間距，且所述第M次間距小於或等於所述最小解析距離。 The mask according to claim 1, wherein N≧2, and among the N sub-resolution patterns, the Mth sub-resolution pattern and the M-1th sub-resolution pattern The patterns are adjacent to each other, where N≧M≧2, the sub-resolution map of the Mth There is an Mth interval between the pattern and the M-1th sub-resolution pattern, and the Mth interval is less than or equal to the minimum resolution distance. 如請求項3所述的光罩，其中所述第M次間距大於所述第1次間距或所述第N+1次間距。 The mask according to claim 3, wherein the Mth pitch is larger than the 1st pitch or the N+1th pitch. 如請求項1所述的光罩，其中所述第一主間距為延著所述第一方向定義，且所述多個主圖案為延著垂直於所述第一方向的方向延伸的條狀圖案。 The photomask according to claim 1, wherein the first main pitch is defined along the first direction, and the plurality of main patterns are strips extending along a direction perpendicular to the first direction pattern. 如請求項1所述的光罩，其中：N≧2，且在N個的所述第一次解析度圖案中，第M個的所述第一次解析度圖案及第M-1個的所述第一次解析度圖案彼此相鄰，其中N≧M≧2，第M個的所述第一次解析度圖案與第M-1個的所述第一次解析度圖案之間具有第M個的第一次間距，且第M個的所述第一次間距小於或等於所述最小解析距離；且F≧2，且在F個的所述第二次解析度圖案中，第E個的所述第二次解析度圖案及第E-1個的所述第二次解析度圖案彼此相鄰，其中F≧E≧2，第E個的所述第二次解析度圖案與第E-1個的所述第二次解析度圖案之間具有第E個的第二次間距，且第E個的所述第二次間距小於或等於所述最小解析距離。 The mask according to claim 1, wherein: N≧2, and among the N first-time resolution patterns, the M-th first-time resolution pattern and the M-1-th first-time resolution pattern The first-time resolution patterns are adjacent to each other, where N≧M≧2, and there is a first-time resolution pattern between the M-th first-time resolution pattern and the M-1-th first-time resolution pattern. M first-time intervals, and the M-th first-time interval is less than or equal to the minimum resolution distance; and F≧2, and in the F-th second-resolution patterns, the E-th The second resolution pattern of the second resolution pattern and the second resolution pattern of the E-1th are adjacent to each other, wherein F≧E≧2, the second resolution pattern of the Eth is adjacent to the second resolution pattern of the Eth There is an E-th second interval between the E-1 second resolution patterns, and the E-th second interval is smaller than or equal to the minimum resolution distance. 一種半導體元件的製造方法，包括：形成光阻層於基板上；以曝光機並藉由如請求項1至6中任一項之光罩以對所述基板上的所述光阻層進行曝光；以及 對曝光後的所述光阻層顯影以形成光阻圖案，其中所述曝光機具有最小解析距離。 A method for manufacturing a semiconductor element, comprising: forming a photoresist layer on a substrate; using an exposure machine to expose the photoresist layer on the substrate through the photomask according to any one of claims 1 to 6 ;as well as developing the exposed photoresist layer to form a photoresist pattern, wherein the exposure machine has a minimum resolution distance.
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CN107065430A (en) * 2017-03-10 2017-08-18 上海集成电路研发中心有限公司 A kind of rule-based Sub-resolution assist features adding method
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102592002A (en) * 2010-10-29 2012-07-18 佳能株式会社 Method for generating mask data, method for manufacturing mask, and exposure method
TW201327026A (en) * 2011-12-16 2013-07-01 Nanya Technology Corp Photomask
CN106950795A (en) * 2016-01-06 2017-07-14 中芯国际集成电路制造(上海)有限公司 The forming method of secondary graphics
CN107065430A (en) * 2017-03-10 2017-08-18 上海集成电路研发中心有限公司 A kind of rule-based Sub-resolution assist features adding method
TW202006475A (en) * 2018-06-27 2020-02-01 台灣積體電路製造股份有限公司 Pattern formation method using a photo mask、 photo mask and manufacturing method thereof

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