TWI793091B - 用於測試cmos影像掃描裝置的led光源探針卡技術 - Google Patents
用於測試cmos影像掃描裝置的led光源探針卡技術 Download PDFInfo
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Abstract
本案提供一種例如CMOS影像掃描裝置的光電裝置的改良晶圓規模測試。探針卡包含對應於該晶圓中之每一待測裝置的LED光源。該等LED光源提供來自為該LED所照明磷光體的光。針孔與透鏡配置被用以準直提供給該些待測裝置的光。照明的均勻度可以為使用內部光信號作為回授信號的該等LED光源的閉路控制,結合將該等光信號值相關至發射光強度的校準資料而加以提供。照明的均勻度可以進一步藉由提供中性密度濾光器給每一LED光源加以改良,以改良由一光源至另一光源的均勻度及/或改良來自各個LED光源的輻射型樣的均勻度。
Description
本案主張申請於2016年9月12日的美國臨時專利申請62/432,548號,並將其整個併入作為參考。
本發明關係於光電裝置,特別是CMOS影像掃描(CIS)裝置的探測與測試。
CMOS(互補金屬-氧化物-矽)影像掃描裝置的傳統測試利用鹵素燈,以提供測試用的光。此配置有重大的缺點,包含大尺寸、需要重大維護及重組態測試設定有困難。這些問題在可能需用到高達300mm直徑的光源之晶圓規模裝置測試的情況下特別嚴重。因此,在本技藝中將有必要提供用以測試光電裝置的改良光源/探針卡。
吾人根據使用發光二極體(LED)作為用於CIS裝置測試的光源,對上述問題提供解決方案。基本架構為一LED陣列,其針對每一被測試的CIS裝置晶片有一LED源。相反於單一裝置被個別地執行,因為此測試典型以晶圓規模加以完成,所以,LED陣列被使用。該等LED照明磷光體,其提供用以測試的光。孔徑+透鏡配置係被用以提供遠心光。在一些實施例中,該孔徑可以被用作為用於該等LED的冷卻配置的一部份。
均勻度濾光器可以被用以改良在晶片內及/或由一晶片到下一晶片之照明均勻度。此等濾光器可以被視為像素化中性密度濾光器。在閉路控制下的操作可以被用以校正在LED間的裝置到裝置間之變化。在一例子中,此控制利用兩校正台,一個用於高照明(即,超出100勒克斯(lx))與另一用於低照明(即,100 lx或更小)。在一例子中,回授控制的另一特性為使用兩光檢測器,一個光檢測器上具有中性密度濾光器,另一光檢測器上則沒有中性密度濾光器。LED強度的回授控制可以利用兩回授路徑:1)LED至光檢測器,及2)LED至磷光體至光檢測器。回授控制也可以以在LED光源模組中的單一光檢測器加以完成,在該光檢測器上可有可沒有中性密度濾光器。
102:LED光源
104:LED光源
106:LED光源
108:LED光源
110:陣列
120:基板
122:待測裝置
124:待測裝置
126:待測裝置
128:待測裝置
132a:電探針
132b:電探針
134a:電探針
134b:電探針
136a:電探針
136b:電探針
138a:電探針
138b:電探針
142:輸出光
144:輸出光
146:輸出光
148:輸出光
202:基板
204:散熱器
206:第一光檢測器
208:第二光檢測器
210:間隔件
212:中性密度濾光器
214:發光二極體
216:磷光體
218:孔徑
220:透鏡外殼
222:透鏡
224:紅外線濾光器
226:漫射器
228:均勻度濾光器
302:回授控制系統
304:LED光源
306:LED光源
308:LED光源
310:LED光源
圖1A-1B顯示本發明之實施例。
圖2為適用於本發明實施例中之LED源的詳細視圖。
圖3顯示適用於本發明實施例中之控制方法。
圖4A-4B顯示用於陣列均勻度之第一例示實驗結果。
圖5A-5B顯示用於陣列均勻度之第二例示實驗結果。
圖6A-6C示意顯示如何可以改良單一LED源的均勻度。
圖1A-1B顯示本發明之例示實施例。於此,圖1A為俯視圖及圖1B為用以測試一陣列光感應電子裝置的設備的對應側視圖。圖1A顯示一陣列110的LED(發光二極體)光源,其中四個被標示為102、104、106及108。該陣列的源並不需要為如圖1A所示之正方形。另一可能變化為在該些LED光源間可以留下間隙,使得該配置並未並鄰。
如於圖1B的側視圖所示,陣列110被組態以使LED光源對應於各個待測電子裝置。在此例子中,源102、104、106、108分別對應於待測裝置122、124、126、128。更明確地說,源102、104、106及108分別提供輸出光142、144、146、148給待測裝置122、124、126、128。在此,待測裝置122、124、126、128被示意地顯示
為配置在基板120中,對於晶圓規模測試將是如此。
本手法的重要優點為LED光源的小型尺寸簡化了光學照明與電探測的整合,以提供用於真實光電探針卡測試光電成像裝置。在圖1A-1B的例子中,此較佳特性係為電探針132a、b;134a、b;136a、b;138a、b所顯示,這些電探針分別電接觸待測裝置122、124、126、128的電終端。為了簡明顯示,每一待測裝置顯示兩電探針,但在實際上,每一待測裝置可能使用任意數量的電探針。
圖2為適用於本發明實施例中之例示LED源的詳細視圖。在此較佳實施例之例子中,發光二極體214提供LED光(實線箭頭),及磷光體216被配置以接收該LED光並提供磷光(虛線箭頭)。如所示,孔徑218被組態以提供來自該磷光的點源照明。透鏡222被組態以提供來自點源照明的準直光。透鏡222較佳為被設計用於在磷光體216所提供的波長範圍上的準直功能用的非球面透鏡。均勻度濾光器228係被配置以接收該準直光並提供具有改良均勻度的照明的輸出光。
圖2的例子同時也顯示出現在較佳實施例及/或完整設計中的其它特性。於此,LED 214被安裝在散熱器204上,及該封裝包含:第一光檢測器206、第二光檢測器208、及中性密度濾光器212,配置在第二光檢測器上。如在以下詳細說明所解釋,這些光檢測器係被使用於較佳實施例中,以提供信號作該陣列的LED光源的回授控制。散熱器204與光檢測器206與208被配置在基板202上。間隔件
210被使用以將磷光體216與孔徑218支撐於適當垂直高度。透鏡外殼220將透鏡222定位於離開孔徑218正確距離,以提供如所示之準直(即遠心)光。可以配置在準直光的路徑中的選用元件包含紅外線(IR)濾光器224及/或漫射器226。於此,IR濾光器阻擋IR輻射,以使之不到達待測裝置,以對待測裝置提供純可見光,及漫射器協助改良由光源所提供給待測裝置的光的均勻度。
如圖2所示,第一光檢測器206與第二光檢測器208典型將接收來自LED 214(實線箭頭)與磷光體216(虛線箭頭)兩者的在LED光源內的光。對於各個LED光源的磷光體較佳被組態為配置在該LED光源的發光二極體上的均勻厚度的薄膜,如在圖2所示。較佳磷光體216為被選擇以提供實質上白色照明(例如,藉由組合紅、綠及藍發光磷光體)的磷光體混合。或者,該磷光體或磷光體混合可以被選擇以強調特定想要的光頻分佈。
本發明之較佳實施例之重要態樣為在發光陣列中之各個LED光源的回授控制,以提供均勻照明給所有待測裝置。圖3顯示適用於本發明實施例之控制方法。於此,回授控制系統302接收來自各個LED光源304、306、308、310的量測光信號(虛線)並被組態以使用該量測光信號控制該陣列LED光源的操作(實線),以提供均勻照明給該陣列的光感應電子裝置。該系統的校正可以被執行以將量測光信號相關至各個LED光源的發射光強度。此資料然後可以被用以在控制系統302中建立查找表,使得各個
LED光源被驅動,使得為了想要陣列強度,其量測光信號為依據該查找表。為了找出在校正資料點間的中間之想要強度值,可以在查找表中執行內差法。此校正可以初始時被完成然後如果偶而或如想要地重複,以解釋裝置效能隨著時間之漂移。為了容易顯示,在圖3的例子中只有四個LED光源被顯示,但此回授控制可以對具有任意數量的LED光源的陣列加以實施。
在如同圖2例子的較佳實施例中,來自各個LED光源的兩回授信號被使用,即,來自在其上並未配置中性密度濾光器的第一光檢測器的第一信號,及來自其上配置有中性密度濾光器的第二光檢測器的第二信號。令兩回授用光檢測器如此組態的目的為改良動態範圍,因為單一光檢測器只可以在光強度的有限範圍上,提供有用的回授。因此,在此例子中,當光強度足夠高以飽和第一光檢測器206時,因為中性密度濾光器212,第二光檢測器208將能提供有用回授。較佳地,中性密度濾光器212被組態以提供連續回授範圍給所述組合兩光檢測器(例如,來自光檢測器208的信號係為飽和光檢測器206的最低光強度的飽和值的1%)。如果有需要,依據這些原理,加入其他回授光檢測器與中性密度濾光器,以進一步增加動態範圍。或者,可以使用單一光檢測器(其上可有或沒有中性密度濾光器),來提供回授用光信號。
均勻度也可以藉由在各個LED光源中使用均勻度濾光器228加以改良。這些均勻度濾光器可以為中性密
度濾光器,其在該均勻度濾光器安裝之前,依據該陣列的LED光源的輸出光均勻度的校正量測,針對其對應LED光源加以個別客製化。換句話說,由一LED光源到另一LED光源的均勻度係使用主動手法(回授控制)與被動手法(均勻度濾光器)兩者的組合加以提供。
圖4A-4B顯示陣列均勻度的第一例示實驗結果。於此,圖4A為由LED陣列的發射值表,其中所有驅動電流係為相同,及圖4B由來自相同陣列,在為陣列中之各個光源安裝適當客製化均勻度濾光器後的發射值表。在圖4A中,發射值具有最大值555、最小值463、平均值520及標準偏差22。在圖4B中,發射值具有最大值553、最小值546、平均值550、及標準偏差1.9。明顯地,圖4B的陣列提供遠較圖4A的陣列均勻的照明,並且,可以預期閉路控制可以更進一步改良一LED光源至另一LED光源的照明均勻度。
圖5A-5B顯示對於陣列均勻度的第二例示實驗結果。圖4A-4B為用於具有該設備的一測試器類型結果,及圖5A-5B為具有相同或類似設備的另一測試器類型的結果。於此圖5A為具有所有驅動電流相同的LED陣列的發射值表,及圖5B為在安裝適當客製化均勻度濾光器給在該陣列的各個源後的相同陣列的發射值表。在圖5A中,發射值具有最大值551、最小值451、平均值506及標準偏差32。在圖5B中,發射值具有最大值564、最小值554、平均值559及標準偏差2.3。明顯地,圖5B的陣列提供遠較圖5A的
陣列均勻的照明,並且可以預期到閉路控制可進一步改良由一LED光源至另一LED的照明均勻度。
作為在圖4A-4B與圖5A-5B的例子中的LED源陣列已經相較於用以測試應用的傳統鹵素光源,及相較於傳統鹵素光源,LED光源陣列提供相對均勻的照明。
前述例子顯示均勻度濾光器可以如何被使用以改良由一待測裝置至另一待測裝置的均勻度。也有可能使用均勻度濾光器改良來自各個LED光源的照明均勻度,或替代地或額外地改良在LED光源間的均勻度。
圖6A-6C示意顯示在單一LED源內的均勻度如何改良。於此,圖6A示意顯示可以如同上述由LED源取得的光發射型樣。均勻度濾光器可以調整,以具有如圖6B所示之傳輸(即,對於圖6A的波束型樣的更密集部有較低傳輸,及對於圖6A的波束型樣的較不密集部具有較高傳輸)。光微影(例如,玻璃上或石英上有鉻)或類似方法係被使用以作出具有可變傳輸的濾光器。一旦安裝,所得強度分佈應更均勻,如同圖6C所示。於此,用於各個LED光源的均勻度濾光器,其在安裝該均勻度濾光器之前,依據對應LED光源的輸出光均勻度的校正量測,以針對其對應LED光源加以個別客製化。
102‧‧‧LED光源
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120‧‧‧基板
122‧‧‧待測電子裝置
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128‧‧‧待測電子裝置
132a‧‧‧電探針
132b‧‧‧電探針
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142‧‧‧輸出光
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Claims (11)
- 一種用以測試一陣列光感應電子裝置的設備,該設備包含:一陣列的LED(發光二極體)光源,其中該陣列的LED光源被組態以使各自的LED光源對應於該等電子裝置的各個電子裝置;其中各個LED光源包含單一發光二極體,被組態以提供LED光;其中各個LED光源包含磷光體,配置以接收該LED光並提供磷光;其中各個LED光源包含孔徑,被組態以提供來自該磷光的點源照明;其中各個LED光源包含透鏡,被組態以提供來自該點源照明的準直光;其中各個LED光源包含均勻度濾光器,配置以接收該準直光並提供具有改良照明的均勻度的輸出光;其中用於各個LED光源的該均勻度濾光器,係在安裝該均勻度濾光器前,依據該陣列的LED光源的輸出光均勻度的校正量測,針對其對應LED光源加以個別客製化;其中該均勻度濾光器為中性密度濾光器。
- 如申請專利範圍第1項之設備,其中該設備為探針卡,用以測試光電成像裝置,及 其中該探針卡更包含一或更多電氣探針,用以與待測光電成像裝置的電終端作電接觸。
- 如申請專利範圍第1項之設備,其中各個LED光源的該磷光體被組態為配置在該的LED光源的該發光二極體上的均勻厚度的薄膜。
- 如申請專利範圍第1項之設備,更包含:回授控制系統,被組態以量測來自各個LED光源的光信號並被組態以使用該量測光信號,控制該陣列的LED光源的操作,以對該陣列光感應電子裝置提供均勻照明。
- 如申請專利範圍第4項之設備,其中該回授控制系統被組態以利用從來自該LED光源的輸出光的校正量測所導出的查找表。
- 如申請專利範圍第4項之設備,其中各個LED光源更包含:第一光檢測器;其中所述光信號係由該第一光檢測器所提供。
- 如申請專利範圍第6項之設備,其中該中性密度濾光器係配置在該第一光檢測器上。
- 如申請專利範圍第6項之設備,其中該第一光檢測器被組態以接收來自該LED光源的該LED與該磷光體兩者的在該LED光源內的光。
- 如申請專利範圍第6項之設備,其中各個LED光源更包含:第二光檢測器;其中該中性密度濾光器係配置在該第二光檢測器上;其中所述光信號係被該第一光檢測器與該第二光檢測器兩者所提供。
- 如申請專利範圍第9項之設備,其中該第一光檢測器與該第二光檢測器被組態以接收來自該LED光源的該LED與該磷光體兩者的在該LED光源內的光。
- 如申請專利範圍第1項之設備,其中用於各個LED光源的該均勻度濾光器,係在安裝該均勻度濾光器前,依據其對應LED光源的輸出光均勻度的校正量測,針對其對應LED光源加以個別客製化。
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