TWI792215B - Display panel having through-hole via structure and manufacturing method thereof - Google Patents
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Abstract
一種具有直通穿孔結構之顯示面板，包括：一基板，其上設有一陣列電路；一發光層，具有複數個發光區域，位於基板及陣列電路上；至少一隔絕結構，位於基板及/或陣列電路上；一陰極層，位於發光層上；其中，直通穿孔結構位於隔絕結構中，以電性連接陣列電路或陰極層。 A display panel with a through-hole structure, comprising: a substrate on which an array circuit is arranged; a light-emitting layer having a plurality of light-emitting regions located on the substrate and the array circuit; at least one isolation structure located on the substrate and/or the array circuit above; a cathode layer located on the light-emitting layer; wherein, the through-hole structure is located in the isolation structure to electrically connect the array circuit or the cathode layer.
Description
本發明關於一種顯示面板，特別是關於一種具有直通穿孔結構之顯示面板及其製作方法。 The present invention relates to a display panel, in particular to a display panel with a through-hole structure and a manufacturing method thereof.
在玻璃基板或矽基板中形成直通穿孔(Through-hole via，THV)結構已廣泛地應用在半導體及電子封裝製程中，以將兩個單獨的設備/裝置，或作為中介層(Interposter)以扇出(fan-out)型封裝具有密集接觸點的小型半導體晶片，舉例來說，從而形成與印刷電路板(PCB)的連接。 Forming a through-hole via (THV) structure in a glass substrate or a silicon substrate has been widely used in semiconductor and electronic packaging processes to connect two separate devices/devices, or as an interposer (Interposter) to fan The fan-out type packages a small semiconductor die with dense contact points, for example, to form connections to a printed circuit board (PCB).
一般形成直通穿孔(THV)的常用作法包括機械鑽孔(drilling)、紅外線雷射(IR laser)、紫外線雷射(UV laser)、脈衝雷射(pulse laser)、乾式/濕式蝕刻(dry/wet etching)或前述方法的組合。依據實際應用層面，形成直通穿孔(THV)的任何方法都需要考慮到如何完整保留工件的效用及功能。因此，如何製成直通穿孔(THV)而不傷害到工件的功能及其效用，是本發明一大課題。 Commonly used methods for forming through vias (THV) include mechanical drilling (drilling), infrared laser (IR laser), ultraviolet laser (UV laser), pulse laser (pulse laser), dry/wet etching (dry/ wet etching) or a combination of the aforementioned methods. According to the practical application level, any method of forming a through via (THV) needs to consider how to fully preserve the utility and function of the workpiece. Therefore, how to make through through holes (THV) without damaging the function and utility of the workpiece is a major subject of the present invention.
鑑於上述發明背景，本發明通過在顯示面板結構中形成一隔 絕結構圍繞於直通穿孔(THV)結構周圍，可用於消除直通穿孔(THV)結構對於單獨工件/裝置/設備的潛在干擾。為了保持避免顯示面板裝置的完整性及/或避免濕氣或粉層等外來汙染物進入工件之主動區，隔絕結構可以將直通穿孔(THV)結構由主動區(active region)隔離。形成前述直通穿孔(THV)的結構及其製作方法可以應用在液晶顯示面板(LCD)或有機發光二極體顯示面板(OLED)，甚至是半導體晶片的封裝。 In view of the above-mentioned background of the invention, the present invention forms a spacer in the structure of the display panel The insulation structure surrounds the through-via (THV) structure and can be used to eliminate the potential interference of the through-via (THV) structure with the individual workpiece/device/equipment. In order to maintain the integrity of the display panel device and/or prevent foreign contaminants such as moisture or powder layers from entering the active region of the workpiece, the isolation structure can isolate the through-via (THV) structure from the active region. The aforementioned THV structure and manufacturing method can be applied to liquid crystal display panels (LCD) or organic light emitting diode display panels (OLED), or even semiconductor chip packaging.
為了達到上述之一或部份或全部目的或是其他目的，本發明實施例提供一種具有直通穿孔結構之顯示面板，包括：一基板，其上設有一陣列電路；一發光層，具有複數個發光區域，位於基板及陣列電路上；至少一隔絕結構，位於基板及/或陣列電路上；一陰極層，位於發光層上；其中，直通穿孔結構位於隔絕結構中，以電性連接陣列電路或陰極層。 In order to achieve one or part or all of the above objectives or other objectives, an embodiment of the present invention provides a display panel with a through-hole structure, including: a substrate on which an array circuit is arranged; a light-emitting layer with a plurality of light-emitting The area is located on the substrate and the array circuit; at least one isolation structure is located on the substrate and/or the array circuit; a cathode layer is located on the light-emitting layer; wherein, the through-hole structure is located in the isolation structure to electrically connect the array circuit or the cathode layer.
在一實施例中，基板可以是一主動矩陣陣列基板或一被動矩陣陣列基板，且其材料包含玻璃或樹脂。 In one embodiment, the substrate may be an active matrix array substrate or a passive matrix array substrate, and its material includes glass or resin.
在一實施例中，直通穿孔結構是由一直通穿孔及一導電材料組成，導電材料填滿直通穿孔。在另一實施例中，導電材料覆蓋於直通穿孔之內壁。 In one embodiment, the through-via structure is composed of a through-hole and a conductive material, and the conductive material fills the through-hole. In another embodiment, the conductive material covers the inner wall of the through hole.
在一實施例中，更包括至少一開口，開口位於隔絕結構上方，以避免直通穿孔結構將陣列電路及陰極層電性連接。 In one embodiment, at least one opening is further included, and the opening is located above the isolation structure, so as to prevent the through-hole structure from electrically connecting the array circuit and the cathode layer.
在一實施例中，開口之材料為一透明介質，以防水氣凝結或熱漲冷縮。 In one embodiment, the material of the opening is a transparent medium to prevent moisture condensation or thermal expansion and contraction.
為了達到上述之一或部份或全部目的或是其他目的，本發明實施例提供一種具有直通穿孔結構之顯示面板之製作方法，包括：提供一 陣列基板，其上設有一陣列電路(array circuitry)；沉積一隔絕結構在一陽極之預定位置及一陰極之預定位置上，其中陽極之預定位置及陰極之預定位置位於陣列基板上；沉積一保護層(protective coating)在陣列基板上方，以覆蓋陣列基板上陣列電路與隔絕結構；由陣列基板的下方，在隔絕結構中形成一直通穿孔；填入一導電材料在直通穿孔中，以形成具導電性之直通穿孔結構；移除保護層C；沉積一像素定義層，以覆蓋位於陽極上之直通穿孔結構，但未覆蓋在位於陰極上之直通穿孔結構；沉積具有一開口之一發光層，其中開口位於陰極上之直通穿孔結構的上方；沉積一陰極層，以電性接觸陰極上之直通穿孔結構；以及形成一封裝層在陰極層上方。 In order to achieve one or part or all of the above objectives or other objectives, an embodiment of the present invention provides a method for manufacturing a display panel with a through-hole structure, including: providing a An array substrate is provided with an array circuit (array circuitry); an isolation structure is deposited on a predetermined position of an anode and a predetermined position of a cathode, wherein the predetermined position of the anode and the predetermined position of the cathode are located on the array substrate; depositing a protection The protective coating is above the array substrate to cover the array circuit and the isolation structure on the array substrate; from the bottom of the array substrate, a straight through hole is formed in the isolation structure; a conductive material is filled in the through hole to form a conductive A straight through hole structure; remove the protective layer C; deposit a pixel definition layer to cover the through hole structure on the anode, but not cover the through hole structure on the cathode; deposit a light emitting layer with an opening, wherein The opening is located above the through-hole structure on the cathode; a cathode layer is deposited to electrically contact the through-hole structure on the cathode; and an encapsulation layer is formed on the cathode layer.
在一實施例中，形成直通穿孔之步驟中，陰極N上的直通穿孔穿透隔絕結構。 In one embodiment, in the step of forming the through-hole, the through-hole on the cathode N penetrates the isolation structure.
在一實施例中，封裝層包含一聚合型密封劑或一上蓋玻璃，來封裝顯示面板。 In one embodiment, the encapsulation layer includes a polymeric sealant or a cover glass to encapsulate the display panel.
在一實施例中，顯示面板包含一觸控電極，在沉積隔絕結構之步驟中，包括：沉積隔絕結構在觸控電極之預定位置上，其中觸控電極之預定位置位於陣列基板上。其中形成直通穿孔之步驟，觸控電極上的直通穿孔穿透隔絕結構。沉積像素定義層之步驟中，像素定義層未覆蓋在位於觸控電極上的直通穿孔結構。沉積發光層之步驟中，開口位於觸控電極上之直通穿孔結構。在一實施例中，更包括：形成一觸控感測電路層於封裝層上，以電性連接觸控電極。在一實施例中，更包括：貼附一保護玻璃於觸控感測電路層上方。 In one embodiment, the display panel includes a touch electrode, and the step of depositing the isolation structure includes: depositing the isolation structure on a predetermined position of the touch electrode, wherein the predetermined position of the touch electrode is located on the array substrate. In the step of forming the through hole, the through hole on the touch electrode penetrates the isolation structure. In the step of depositing the pixel definition layer, the pixel definition layer does not cover the through-hole structure on the touch electrode. In the step of depositing the light-emitting layer, the opening is located on the through-hole structure on the touch electrode. In one embodiment, it further includes: forming a touch sensing circuit layer on the packaging layer to electrically connect the touch electrodes. In one embodiment, it further includes: attaching a protective glass on the touch sensing circuit layer.
為了達到上述之一或部份或全部目的或是其他目的，本發明 實施例提供一種具有直通穿孔結構之顯示面板之製作方法，包括：提供一陣列基板，其上設有一陣列電路；沉積一隔絕結構在一陽極之預定位置及一陰極之預定位置上；沉積一像素定義層，以定義一發光區域(即每一像素)，發光區域不包括陽極之預定位置及陰極之預定位置；沉積具有一開口之一發光層於像素定義層上，其中開口位於陽極上之隔絕結構及陰極上之隔絕結構的上方；沉積一陰極層於發光層上；形成一封裝層在陰極層上；由陣列基板之下方形成一直通穿孔在陽極上之隔絕結構及陰極上之隔絕結構中；以及，在直通穿孔中填入一導電材料，以形成一直通穿孔結構，其中陰極上的直通穿孔結構電性連接陰極層，陽極上直通穿孔結構電性連接陣列電路。 In order to achieve one or part or all of the above-mentioned purposes or other purposes, the present invention The embodiment provides a method for manufacturing a display panel with a through-hole structure, including: providing an array substrate on which an array circuit is disposed; depositing an isolation structure on a predetermined position of an anode and a predetermined position of a cathode; depositing a pixel Definition layer, to define a light-emitting area (that is, each pixel), the light-emitting area does not include the predetermined position of the anode and the predetermined position of the cathode; depositing a light-emitting layer with an opening on the pixel definition layer, wherein the opening is located on the isolation of the anode Above the structure and the isolation structure on the cathode; deposit a cathode layer on the light-emitting layer; form an encapsulation layer on the cathode layer; form a through hole in the isolation structure on the anode and the isolation structure on the cathode from below the array substrate and filling a conductive material into the through hole to form a through hole structure, wherein the through hole structure on the cathode is electrically connected to the cathode layer, and the through hole structure on the anode is electrically connected to the array circuit.
在一實施例中，形成直通穿孔之步驟中，陰極上的直通穿孔穿透隔絕結構。 In one embodiment, in the step of forming the through-hole, the through-hole on the cathode penetrates the isolation structure.
在一實施例中，顯示面板包含一觸控電極，在沉積隔絕結構之步驟中，包括：沉積隔絕結構在觸控電極之預定位置上，其中觸控電極之預定位置位於陣列基板上。其中發光區域L不包括觸控電極之預定位置。形成直通穿孔之步驟前，更包括：形成一觸控感測電路層於封裝層上，並貼附一保護玻璃於觸控感測電路層上方。形成直通穿孔之步驟中，觸控電極上的直通穿孔穿透隔絕結構。在直通穿孔中填入導電材料以形成直通穿孔結構之步驟中，觸控電極上的直通穿孔結構電性連接觸控感測電路層。 In one embodiment, the display panel includes a touch electrode, and the step of depositing the isolation structure includes: depositing the isolation structure on a predetermined position of the touch electrode, wherein the predetermined position of the touch electrode is located on the array substrate. Wherein the light emitting area L does not include the predetermined position of the touch electrode. Before the step of forming the through hole, it further includes: forming a touch sensing circuit layer on the packaging layer, and attaching a protective glass on the touch sensing circuit layer. In the step of forming the through hole, the through hole on the touch electrode penetrates the isolation structure. In the step of filling the through hole with conductive material to form the through hole structure, the through hole structure on the touch electrode is electrically connected to the touch sensing circuit layer.
100、100A、100B、100C、100D、100E:顯示面板 100, 100A, 100B, 100C, 100D, 100E: display panel
1:基板 1: Substrate
2:陣列電路 2: Array circuit
3:隔絕結構 3: Isolation structure
4:導電材料 4: Conductive material
5:像素定義層 5: Pixel definition layer
6:發光層 6: Luminous layer
7:陰極層 7: Cathode layer
8:封裝層 8: Encapsulation layer
9:觸控感測電路層 9: Touch sensing circuit layer
10:直通穿孔 10: Straight through perforation
10’、B:直通穿孔結構 10', B: Straight through perforation structure
A:保護玻璃 A: Protective glass
C:保護層 C: protective layer
L:發光區域 L: Luminous area
N:陰極 N: cathode
O:開口 O: open
P:陽極 P: anode
T:觸控電極 T: touch electrode
S10-S19、S10A-S21A、S30-S37、S30A-S39A:步驟 S10-S19, S10A-S21A, S30-S37, S30A-S39A: steps
圖1A及圖1B分別為本發明實施例中一種具有直通穿孔(THV)結構之顯示面板進行穿孔前後的示意圖。 1A and 1B are schematic views of a display panel with a through-via (THV) structure before and after perforation in an embodiment of the present invention, respectively.
圖2為本發明實施例中一種具有直通穿孔結構之顯示面板的上視圖。 FIG. 2 is a top view of a display panel with a through-hole structure in an embodiment of the present invention.
圖3A及圖3B，分別為本發明實施例中顯示面板的陰極內連線結構進行穿孔前後的截面示意圖。 FIG. 3A and FIG. 3B are schematic cross-sectional views of the cathode interconnection structure of the display panel before and after perforation in an embodiment of the present invention, respectively.
圖4A及圖4B，分別為本發明實施例中顯示面板的陽極內連線結構進行穿孔前後的截面示意圖。 FIG. 4A and FIG. 4B are schematic cross-sectional views of the anode interconnection structure of the display panel before and after perforation in the embodiment of the present invention, respectively.
圖5為本發明第一實施例中一種具有直通穿孔結構之顯示面板之製作方法的流程圖。 FIG. 5 is a flow chart of a method for manufacturing a display panel with a through-hole structure according to the first embodiment of the present invention.
圖6至圖15及圖6A至圖15A，分別為圖5所示第一實施例的製作方法中顯示面板之截面及上視的製程示意圖。 FIGS. 6 to 15 and FIGS. 6A to 15A are schematic diagrams of the cross-section and top view of the manufacturing process of the display panel in the manufacturing method of the first embodiment shown in FIG. 5, respectively.
圖16為本發明第二實施例中一種具有直通穿孔結構之顯示面板之製作方法的流程圖。 FIG. 16 is a flow chart of a method for manufacturing a display panel with a through-hole structure according to the second embodiment of the present invention.
圖17至圖24及圖17A至圖24A，分別為圖16所示第二實施例的製作方法中顯示面板之截面及上視的製程示意圖。 FIGS. 17 to 24 and FIGS. 17A to 24A are schematic diagrams of the cross-section and top view of the display panel in the manufacturing method of the second embodiment shown in FIG. 16, respectively.
圖25為本發明第三實施例中一種具有直通穿孔結構之觸控顯示面板之製作方法的流程圖。 FIG. 25 is a flow chart of a method for manufacturing a touch display panel with a through-hole structure according to the third embodiment of the present invention.
圖26至圖37及圖26A至圖37A，分別為圖25所示第三實施例的製作方法中顯示面板之截面及上視的製程示意圖。 FIGS. 26 to 37 and FIGS. 26A to 37A are schematic diagrams of the cross-section and top view of the manufacturing process of the display panel in the manufacturing method of the third embodiment shown in FIG. 25, respectively.
圖38為本發明第四實施例中一種具有直通穿孔結構之觸控顯示面板100D之製作方法的流程圖。
FIG. 38 is a flow chart of a method for manufacturing a
圖39至圖48及圖39A至圖48A，分別為圖38所示第四實施例的製作方法中顯示面板之截面及上視的製程示意圖。 FIGS. 39 to 48 and FIGS. 39A to 48A are schematic diagrams of the cross-section and top view of the display panel in the manufacturing method of the fourth embodiment shown in FIG. 38, respectively.
圖49及圖49A為本發明一實施例中一種具有直通穿孔結構之顯示面板的截面圖及上視圖。 49 and 49A are a cross-sectional view and a top view of a display panel with a through-hole structure according to an embodiment of the present invention.
有關本發明前述及其他技術內容、特點與功效，在以下配合參考圖式之一較佳實施例的詳細說明中，將可清楚的呈現。以下實施例中所提到的方向用語，例如：上、下、左、右、前或後等，僅是用於參照隨附圖式的方向。因此，該等方向用語僅是用於說明並非是用於限制本發明。 The foregoing and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only used to refer to the directions of the accompanying drawings. Therefore, these directional terms are used for illustration only and not for limiting the present invention.
請參照圖1A及圖1B，其為本發明實施例中一種具有直通穿孔結構之顯示面板100進行穿孔前後的示意圖。顯示面板100包括一基板1、至少一隔絕結構3、一發光層6、一封裝層8。其中，基板1可以是一主動矩陣陣列基板或一被動矩陣陣列基板，且其材料包含玻璃或樹脂等。發光層6可以是有機發光二極體(OLED)。由圖1B所示可知，由圖1A中基板1之下方形成一直通穿孔10。
Please refer to FIG. 1A and FIG. 1B , which are schematic diagrams before and after perforation of a
請同時參照圖2，為本發明實施例中一種具有直通穿孔結構之顯示面板100的上視圖。圖式為了方便理解，並未繪製封裝層。基板1其上設有一陣列電路2，其中陣列電路2包含一資料匯流排(Data Line)，如圖式中兩橫排及一縱排之斜線區域；發光層6具有複數個發光區域L，位於基板1及陣列電路2上；至少一隔絕結構3，位於基板1及/或陣列電路2上；陰極層7位於發光層6上；直通穿孔結構10’位於隔絕結構3中，以電性連接陣列電路2或陰極層7。前述直通穿孔結構10’是由直通穿孔10及一導電材料組成，導電材料填滿直通穿孔10。
Please also refer to FIG. 2 , which is a top view of a
在一實施例中，導電材料覆蓋於直通穿孔10之內壁，只要直
通穿孔結構10’能達到具有導電性之功能，導電材料可不必填滿直通穿孔10。在一實施例中，陽極P之預定位置及陰極N之預定位置位於陣列基板1上，陽極P之預定位置可以在資料匯流排(Data Line)任一位置，陰極N之預定位置可以避免電流擁擠效應(current crowding effect)，則其設置數量不只一個，以有效解決電流匯集的問題。此外，發光層6採用有機發光二極體(OLED)，其橫向導電效果差，也能避免橫向漏電。
In one embodiment, the conductive material covers the inner wall of the through
以下為了方便理解，擷取本發明實施例中一種具有直通穿孔結構之顯示面板100不同位置的截面，來進行詳細說明。
For the convenience of understanding, the cross-sections of different positions of a
請見圖3A及圖3B，其為凸顯本發明實施例中顯示面板100的陰極N內連線結構之截面圖。圖3A為尚未設有直通穿孔的示意圖。在本實施例中，至少一隔絕結構3位於基板1上方。圖1B中的直通穿孔10填入導電材料4，形成一具有導電性的直通穿孔結構10’位於隔絕結構3中，以電性連接陰極層7，而形成陰極結構N。
Please refer to FIG. 3A and FIG. 3B , which are cross-sectional views highlighting the cathode N interconnection structure of the
請見圖4A及圖4B，其為凸顯本發明實施例中顯示面板100的陽極P內連線結構之截面圖。圖4A為尚未設有直通穿孔的示意圖。在本實施例中，至少一隔絕結構3位於陣列電路2上，圖1B中的直通穿孔10填入導電材料4，形成具有導電性的直通穿孔結構10’位於隔絕結構3中，以電性連接陣列電路2，而形成陽極結構P。在本實施例中，可以看到至少一開口O，開口O位於隔絕結構3上方的周圍，以避免直通穿孔結構10’將陣列電路2電性接觸陰極層7而造成短路。在一較佳實施例中，開口O之材料為一透明介質，以防水氣凝結或熱漲冷縮。
Please refer to FIG. 4A and FIG. 4B , which are cross-sectional views highlighting the interconnection structure of the anode P of the
請參考圖5，為本發明第一實施例中一種具有直通穿孔結構
之顯示面板100A之製作方法的流程圖，並請配合參照圖6至圖15及圖6A至圖15A中顯示面板100A之截面及上視的製程示意圖。
Please refer to FIG. 5 , which is a structure with straight through holes in the first embodiment of the present invention.
The flow chart of the manufacturing method of the
步驟S10：如圖6及圖6A所示，提供一陣列基板1，其具有陣列電路(array circuitry)2，其中陣列基板1包含一主動矩陣陣列基板或一被動矩陣陣列基板(active/passive-matrix array substrate)，且陣列基板1之材料包含玻璃或樹脂，陣列電路2包含一資料匯流排(Data Line)。
Step S10: As shown in FIG. 6 and FIG. 6A, an
步驟S11：如圖7及圖7A所示，沉積一隔絕結構3在一陽極P之預定位置及一陰極N之預定位置上。
Step S11 : as shown in FIG. 7 and FIG. 7A , deposit an
步驟S12：如圖8及圖8A所示，沉積一保護層(protective coating)C在陣列基板1上方，以覆蓋陣列基板1上陣列電路2與隔絕結構3。
Step S12 : as shown in FIG. 8 and FIG. 8A , deposit a protective coating C on the
步驟S13：如圖9及圖9A所示，由陣列基板1的下方，在隔絕結構3中形成一直通穿孔10。在一實施例中，位在陽極P之位置上的直通穿孔10可選擇性地穿透隔絕結構3；於一較佳實施例中，位在陽極P之位置上的直通穿孔10並未穿透隔絕結構3，但位在陰極N之位置上的直通穿孔10則穿透隔絕結構3及其上覆蓋的保護層C。
Step S13 : as shown in FIG. 9 and FIG. 9A , form a through
步驟S14：如圖10及圖10A所示，在直通穿孔10中填入一導電材料4，以形成具有導電性之直通穿孔結構10’。具有導電性之直通穿孔結構10’電性連接陣列電路2，而形成陽極P結構。
Step S14: As shown in FIG. 10 and FIG. 10A , fill a
步驟S15：如圖11及圖11A所示，移除上方的保護層C。 Step S15 : as shown in FIG. 11 and FIG. 11A , remove the upper protective layer C.
步驟S16：如圖12及圖12A所示，沉積一像素定義層5，以覆蓋陽極P之位置上的直通穿孔結構10’，但並未覆蓋在陰極N之位置上的直通穿孔結構10’，其中像素定義層5用以定義發光區域L；
Step S16: As shown in FIG. 12 and FIG. 12A, deposit a
步驟S17：如圖13及圖13A所示，沉積具有一開口O之一發光層6，其中開口O位於陰極N之位置上的直通穿孔結構10’上方。
Step S17: As shown in FIG. 13 and FIG. 13A , deposit a light-emitting
步驟S18：如圖14及圖14A所示，沉積一陰極層7，由於前述步驟S13中位在陰極N之位置上的直通穿孔10穿透隔絕結構3，陰極層7得以電性連接陰極N位置上之直通穿孔結構10’，而形成陰極N結構。在本發明之實際態樣中，由於部分陽極及陰極的位置分布十分鄰近，通過發光層6之開口O的結構設計，可以避免陰極過度鄰近(close vicinity)陽極而造成短路。在一較佳實施例中，開口O包括一透明介質。
Step S18: As shown in FIG. 14 and FIG. 14A, a
步驟S19：如圖15及圖15A所示，利用一聚合型密封劑(polymer type encapsulant)或一上蓋玻璃8來封裝顯示面板100A。
Step S19 : as shown in FIG. 15 and FIG. 15A , encapsulate the
請參考圖16，為本發明第二實施例中一種具有直通穿孔結構之顯示面板100B之製作方法的流程圖，並請配合參照圖17至圖24及圖17A至圖24A中顯示面板100B之截面及上視的製程示意圖。 Please refer to FIG. 16 , which is a flowchart of a method for manufacturing a display panel 100B with a through-hole structure in the second embodiment of the present invention, and please refer to the cross-sections of the display panel 100B in FIGS. 17 to 24 and FIGS. 17A to 24A And the schematic diagram of the above-mentioned process.
步驟S30：如圖17及圖17A所示，提供一陣列基板1，其具有陣列電路(array circuitry)2，其中陣列基板包含一主動矩陣陣列基板或一被動矩陣陣列基板(active/passive-matrix array substrate)，且該陣列基板之材料包含玻璃或樹脂。
Step S30: As shown in FIG. 17 and FIG. 17A, an
步驟S31：如圖18及圖18A所示，沉積一隔絕結構3在一陽極P之預定位置及一陰極N之預定位置上。在一實施例中，陽極P之預定位置及陰極N之預定位置位於該陣列基板1上，陽極P之預定位置可以在資料匯流排(Data Line)任一位置，陰極N之預定位置可以避免電流擁擠效應(current crowding effect)，則其設置數量不只一個，以有效解決電流匯集的問題。
Step S31 : as shown in FIG. 18 and FIG. 18A , deposit an
步驟S32：如圖19及圖19A所示，沉積一像素定義層5，以定義發光區域L，每一發光區域可視為一像素，其中發光區域不包括陽極P之預定位置及陰極N之預定位置。
Step S32: As shown in Figure 19 and Figure 19A, deposit a
步驟S33：如圖20及圖20A所示，沉積具有開口O之一發光層6於像素定義層5上，發光層6位在陽極P之位置上隔絕結構及陰極N之位置上隔絕結構的周圍；也就是說，開口O位於陽極P之位置上隔絕結構3及陰極N之位置上隔絕結構3的上方。
Step S33: As shown in FIG. 20 and FIG. 20A, deposit a light-emitting
步驟S34：如圖21及圖21A所示，沉積具有開口O之一陰極層7於發光層6上，其中開口O位在陽極P之位置上隔絕結構3的周圍，但覆蓋陰極N之位置上之隔絕結構3的上方。
Step S34: As shown in FIG. 21 and FIG. 21A, deposit a
步驟S35：如圖22及圖22A所示，利用一聚合型密封劑(polymer type encapsulant)或一上蓋玻璃形成一封裝層8，來封裝顯示面板100B。
Step S35 : as shown in FIG. 22 and FIG. 22A , use a polymer type encapsulant or a cover glass to form an
步驟S36：如圖23及圖23A所示，由陣列基板1之下方形成一直通穿孔10在陽極P之位置上隔絕結構3及陰極N之位置上隔絕結構3中。其中，陽極P之位置上直通穿孔10未穿透隔絕結構3，陰極N之位置上直通穿孔10穿透隔絕結構3。
Step S36 : As shown in FIG. 23 and FIG. 23A , form a through
步驟S37：如圖24及圖24A所示，在直通穿孔10中填入一導電材料4，以形成具有導電性的直通穿孔結構10’。陰極N上直通穿孔結構10’可以電性連接陰極層7，而形成陰極N結構；陽極P上直通穿孔結構10’可以電性連接陣列電路2，而形成陽極P結構。
Step S37: As shown in FIG. 24 and FIG. 24A , fill a
請參考圖25，為本發明第三實施例中一種具有直通穿孔結構
之觸控顯示面板100C之製作方法的流程圖，並請配合參照圖26至圖37及圖26A至圖37A中顯示面板100C之截面及上視的製程示意圖。
Please refer to FIG. 25 , which is a structure with straight through holes in the third embodiment of the present invention.
The flow chart of the manufacturing method of the
步驟S10A：如圖26及圖26A所示，提供一陣列基板1，其具有陣列電路(array circuitry)2，其中陣列基板1包含一主動矩陣陣列基板或一被動矩陣陣列基板(active/passive-matrix array substrate)，且陣列基板1之材料包含玻璃或樹脂，陣列電路2包含一資料匯流排(Data Line)。
Step S10A: As shown in FIG. 26 and FIG. 26A, an
步驟S11A：如圖27及圖27A所示，沉積一隔絕結構3在一陽極P之預定位置、一陰極N之預定位置及一觸控電極T之預定位置上。
Step S11A: As shown in FIG. 27 and FIG. 27A , deposit an
步驟S12A：如圖28及圖28A所示，沉積一保護層(protective coating)C在陣列基板1上方，以覆蓋陣列基板1上陣列電路2與大部分的隔絕結構3。
Step S12A: As shown in FIG. 28 and FIG. 28A , deposit a protective coating C on the
步驟S13A：如圖29及圖29A所示，由陣列基板1的下方，在隔絕結構3中形成一直通穿孔10。在一實施例中，位在陽極P之位置上的直通穿孔10可選擇性地穿透隔絕結構3；於一較佳實施例中，位在陽極P之位置上的直通穿孔10並未穿透隔絕結構3，但位在陰極N之位置上的直通穿孔10則穿透隔絕結構3，以及位在觸控電極T之位置上的直通穿孔10穿透隔絕結構3及其上的保護層C。
Step S13A: As shown in FIG. 29 and FIG. 29A , form a through
步驟S14A：如圖30及圖30A所示，在直通穿孔10中填入一導電材料4，以形成具有導電性之直通穿孔結構10’。具有導電性之直通穿孔結構10’電性連接陣列電路2，而形成陽極P結構。
Step S14A: As shown in FIG. 30 and FIG. 30A , fill a
步驟S15A：如圖31及圖31A所示，移除上方的保護層C。 Step S15A: As shown in FIG. 31 and FIG. 31A , remove the upper protective layer C.
步驟S16A：如圖32及圖32A所示，沉積一像素定義層5，以
覆蓋陽極P之位置上的直通穿孔結構10’，但並未覆蓋在陰極N及觸控電極T之位置上的直通穿孔結構10’，其中像素定義層5用以定義發光區域L。
Step S16A: as shown in FIG. 32 and FIG. 32A, deposit a
步驟S17A：如圖33及圖33A所示，沉積具有一開口O之一發光層6，其中開口O位於陰極N之位置上的直通穿孔結構10’上方，以及開口O暴露出觸控電極T。
Step S17A: As shown in FIG. 33 and FIG. 33A , deposit a light-emitting
步驟S18A：如圖34及圖34A所示，沉積一陰極層7，由於前述步驟S13A中位在陰極N之位置上的直通穿孔10穿透隔絕結構3，陰極層7得以電性連接陰極N位置上之直通穿孔結構10’，而形成陰極N結構。在本發明之實際態樣中，由於部分陽極及陰極的位置分布十分鄰近，通過發光層6之開口O的結構設計，可以避免陰極過度鄰近(close vicinity)陽極而造成短路。在一較佳實施例中，開口O包括一透明介質。
Step S18A: As shown in FIG. 34 and FIG. 34A, a
步驟S19A：如圖35及圖35A所示，利用一聚合型密封劑(polymer type encapsulant)或一上蓋玻璃8來封裝觸控顯示面板100C。
Step S19A: As shown in FIG. 35 and FIG. 35A , use a polymer type encapsulant or a
步驟S20A：如圖35及圖35A所示，形成一觸控感測電路層9於封裝層8上，且觸控感測電路層9電性連接觸控電極T之位置上的直通穿孔結構10’，而形成觸控電極T結構。
Step S20A: As shown in FIG. 35 and FIG. 35A, a touch
步驟S21A；貼附一保護玻璃A於觸控感測電路層9上方，以保護整體的觸控顯示面板100C。。
Step S21A: Attach a protective glass A on the touch
請參考圖38，為本發明第四實施例中一種具有直通穿孔結構之觸控顯示面板100D之製作方法的流程圖，並請配合參照圖39至圖48及圖39A至圖48A中顯示面板100D之截面及上視的製程示意圖。
Please refer to FIG. 38 , which is a flowchart of a method for manufacturing a
步驟S30A：如圖39及圖39A所示，提供一陣列基板1，其具
有陣列電路(array circuitry)2，其中陣列基板包含一主動矩陣陣列基板或一被動矩陣陣列基板(active/passive-matrix array substrate)，且該陣列基板之材料包含玻璃或樹脂。
Step S30A: As shown in FIG. 39 and FIG. 39A, an
步驟S31A：如圖40及圖40A所示，沉積一隔絕結構3在一陽極P之預定位置、一陰極N之預定位置及一觸控電極T之預定位置上。在一實施例中，陽極P之預定位置及陰極N之預定位置位於陣列基板1上，陽極P之預定位置可以在資料匯流排(Data Line)任一位置，陰極N之預定位置可以避免電流擁擠效應(current crowding effect)，則其設置數量不只一個，以有效解決電流匯集的問題。
Step S31A: As shown in FIG. 40 and FIG. 40A , deposit an
步驟S32A：如圖41及圖41A所示，沉積一像素定義層5，以定義發光區域L，每一發光區域可視為一像素，其中發光區域不包括陽極P之預定位置、陰極N之預定位置及觸控電極T之預定位置。
Step S32A: As shown in Figure 41 and Figure 41A, deposit a
步驟S33A：如圖42及圖42A所示，沉積具有開口O之一發光層6於像素定義層5上，發光層6位在陽極P之位置上隔絕結構、陰極N之位置上隔絕結構及觸控電極T之位置上隔絕結構的周圍；也就是說，開口O位於陽極P之位置上隔絕結構3及陰極N之位置上隔絕結構3的上方。
Step S33A: As shown in FIG. 42 and FIG. 42A, deposit a light-emitting
步驟S34A；如圖43及圖43A所示，沉積具有開口O之一陰極層7於發光層6上，其中開口O位在陽極P之位置上隔絕結構3的周圍及觸控電極T之位置上隔絕結構的周圍，但覆蓋陰極N之位置上之隔絕結構3的上方，使得陰極N之位置上之隔絕結構3與陰極層7間具有空隙開口O。
Step S34A; as shown in FIG. 43 and FIG. 43A, deposit a
步驟S35：如圖44及圖44A所示，利用一聚合型密封劑(polymer type encapsulant)或一上蓋玻璃形成一封裝層8，來封裝顯示面板
100D。
Step S35: As shown in FIG. 44 and FIG. 44A, use a polymer type encapsulant or a cover glass to form an
步驟S36A：如圖45及圖45A所示，形成一觸控感測電路層9於封裝層8上。
Step S36A: As shown in FIG. 45 and FIG. 45A , form a touch
步驟S37A：如圖46及圖46A所示，貼附一保護玻璃A於觸控感測電路層9上方。
Step S37A: As shown in FIG. 46 and FIG. 46A , attach a protective glass A on the touch
步驟S38A；如圖47及圖47A所示，由陣列基板1之下方形成一直通穿孔10在陽極P之位置上隔絕結構3、陰極N之位置上隔絕結構3與在觸控電極T之位置上隔絕結構3之中。其中，陽極P之位置上直通穿孔10未穿透隔絕結構3，陰極N之位置上直通穿孔10穿透隔絕結構3，且觸控電極T之位置上的直通穿孔10亦穿透隔絕結構3。
Step S38A: As shown in FIG. 47 and FIG. 47A, a through
步驟S39A：如圖48及圖48A所示，在前述直通穿孔10中填入一導電材料4，以形成具有導電性的直通穿孔結構10’。陰極N上直通穿孔結構10’可以電性連接陰極層7，而形成陰極N結構；陽極P上直通穿孔結構10’可以電性連接陣列電路2，而形成陽極P結構；觸控電極T上的直通穿孔結構10’電性連接觸控感測電路層9，而形成觸控電極T結構。
Step S39A: As shown in FIG. 48 and FIG. 48A , fill a
在前述第一至第四實施例中，直通穿孔結構10’是由直通穿孔10及導電材料4組成，導電材料填滿直通穿孔10。然而，如圖49及圖49A所示，導電材料亦可僅覆蓋於直通穿孔之內壁，而形成另一實施例100E的直通穿孔結構B，只要直通穿孔結構能達到具有導電性之功能，導電材料可不必填滿直通穿孔。
In the aforementioned first to fourth embodiments, the through hole structure 10' is composed of the through
100:顯示面板 100: display panel
1:基板 1: Substrate
2:陣列電路 2: Array circuit
3:隔絕結構 3: Isolation structure
5:像素定義層 5: Pixel definition layer
6:發光層 6: Luminous layer
7:陰極層 7: Cathode layer
10’:直通穿孔結構 10': Straight through perforated structure
L:發光區域 L: Luminous area
N:陰極 N: cathode
O:開口 O: open
P:陽極 P: anode
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| TW110108609A TWI792215B (en) | 2021-03-11 | 2021-03-11 | Display panel having through-hole via structure and manufacturing method thereof |
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| TW110108609A TWI792215B (en) | 2021-03-11 | 2021-03-11 | Display panel having through-hole via structure and manufacturing method thereof |
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| TW202236231A TW202236231A (en) | 2022-09-16 |
| TWI792215B true TWI792215B (en) | 2023-02-11 |
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| TW201101268A (en) * | 2009-06-22 | 2011-01-01 | Blue Star Lighting Technology Co Ltd | Translucent LED display panel |
| TW201428705A (en) * | 2013-01-11 | 2014-07-16 | Au Optronics Corp | Display panel and display device |
| US20190012955A1 (en) * | 2017-03-01 | 2019-01-10 | Shenzhen Dicolor Optoelectronics Co., Ltd. | LED display screen capable of implementing a variety of assembling modes |
| TW201929200A (en) * | 2017-12-13 | 2019-07-16 | 元太科技工業股份有限公司 | Flexible display device and manufacturing method thereof |
| CN111081140A (en) * | 2019-05-21 | 2020-04-28 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
| CN111580695A (en) * | 2020-04-29 | 2020-08-25 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| WO2021008417A1 (en) * | 2019-07-18 | 2021-01-21 | 京东方科技集团股份有限公司 | Array substrate, display panel, and display device |
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- 2021-03-11 TW TW110108609A patent/TWI792215B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201101268A (en) * | 2009-06-22 | 2011-01-01 | Blue Star Lighting Technology Co Ltd | Translucent LED display panel |
| TW201428705A (en) * | 2013-01-11 | 2014-07-16 | Au Optronics Corp | Display panel and display device |
| US20190012955A1 (en) * | 2017-03-01 | 2019-01-10 | Shenzhen Dicolor Optoelectronics Co., Ltd. | LED display screen capable of implementing a variety of assembling modes |
| TW201929200A (en) * | 2017-12-13 | 2019-07-16 | 元太科技工業股份有限公司 | Flexible display device and manufacturing method thereof |
| CN111081140A (en) * | 2019-05-21 | 2020-04-28 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
| WO2021008417A1 (en) * | 2019-07-18 | 2021-01-21 | 京东方科技集团股份有限公司 | Array substrate, display panel, and display device |
| CN111580695A (en) * | 2020-04-29 | 2020-08-25 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
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| TW202236231A (en) | 2022-09-16 |
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