TWI788363B - Substrate heating device, substrate processing system, and substrate heating method - Google Patents

Substrate heating device, substrate processing system, and substrate heating method Download PDF

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TWI788363B
TWI788363B TW107119608A TW107119608A TWI788363B TW I788363 B TWI788363 B TW I788363B TW 107119608 A TW107119608 A TW 107119608A TW 107119608 A TW107119608 A TW 107119608A TW I788363 B TWI788363 B TW I788363B
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substrate
heating
pressure
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heating plate
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TW201920892A (en
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加藤茂
細田浩
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日商東京應化工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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Abstract

[課題]可以使朝基板的塗佈物穩定地硬化。 　　[解決手段]實施型態之基板加熱裝置包含：在內部形成能夠收容基板之收容空間的腔室，和能夠減壓上述收容空間之氛圍的減壓部；被配置在上述基板之一方面側及另一方面側之至少一方，並且能夠加熱上述基板的基板加熱部；能夠檢測上述收容空間之壓力的壓力檢測部，和根據上述壓力檢測部之檢測結果，控制上述基板加熱部的控制部。[Problem] It is possible to stably harden the coating on the substrate. [Solution] A substrate heating device according to an embodiment includes: a chamber in which a storage space capable of accommodating a substrate is formed; and a decompression unit capable of depressurizing the atmosphere of the storage space; At least one of the other side, and a substrate heating unit capable of heating the substrate; a pressure detection unit capable of detecting the pressure of the storage space; and a control unit controlling the substrate heating unit based on the detection result of the pressure detection unit.

Description

基板加熱裝置、基板處理系統及基板加熱方法Substrate heating device, substrate processing system, and substrate heating method

本發明係關於基板加熱裝置、基板處理系統及基板加熱方法。The invention relates to a substrate heating device, a substrate processing system and a substrate heating method.

近年來，作為電子裝置用之基板，有以具有可撓性之樹脂基板以取代玻璃基板之市場需求。例如，如此之樹脂基板使用聚醯亞胺膜。例如，聚醯亞胺膜係在基板塗佈聚醯亞胺之前軀體之溶液之後，經過加熱上述基板之工程(加熱工程)而被形成。例如，作為聚醯亞胺之前軀體之溶液，有包含聚醯胺酸和溶劑之聚醯胺酸清漆，藉由使該聚醯胺酸加熱硬化可以取得聚醯亞胺(例如，參照專利文獻1等)。In recent years, as a substrate for electronic devices, there is a market demand for a flexible resin substrate instead of a glass substrate. For example, a polyimide film is used for such a resin substrate. For example, the polyimide film is formed by heating the substrate (heating process) after coating the substrate with a solution of the polyimide precursor. For example, as a solution for the precursor of polyimide, there is a polyamic acid varnish containing polyamic acid and a solvent, and polyimide can be obtained by heating and hardening the polyamic acid (for example, refer to Patent Document 1 wait).

另外，有基板加熱裝置，該基板加熱裝置具備有在內部形成有能夠收容基板之收容空間的腔室，和能夠減壓收容空間之氛圍的減壓部，和被配置在基板之一方面側的加熱板，和被配置在基板之另一方面側的紅外線加熱器(例如，參照專利文獻2)。 　　在專利文獻2中，揭示基板加熱方法，其包含：以第一溫度加熱基板之第一加熱工程，和以較第一溫度高之第二溫度加熱基板的第二加熱工程。 [先前技術文獻] [專利文獻]In addition, there is a substrate heating device including a chamber in which a storage space capable of accommodating a substrate is formed, a decompression unit capable of depressurizing the atmosphere of the storage space, and a chamber disposed on one side of the substrate. A heating plate, and an infrared heater arranged on the other side of the substrate (for example, refer to Patent Document 2). In Patent Document 2, a substrate heating method is disclosed, which includes: a first heating process of heating the substrate at a first temperature, and a second heating process of heating the substrate at a second temperature higher than the first temperature. [Prior Art Document] [Patent Document]

[特許文獻1]日本特開平5-129774號公報 　　[特許文獻2]日本特開2017-83140號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 5-129774 [Patent Document 2] Japanese Patent Application Laid-Open No. 2017-83140

[發明所欲解決之課題][Problem to be Solved by the Invention]

若藉由專利文獻2之揭示技術時，因可以使紅外線加熱器之升溫率大於加熱板之升溫率，故可以使基板之加熱所需之作業時間縮短化。 　　但是，本案發明者研究之結果，認為在以下之點有改善的空間。近年來，由於製程的效率化，有被供於加熱的基板大型化的趨勢，另外，也有要求裝置全體小型化的趨勢。由於該些，當相對於收容基板之腔室的收容空間，供於加熱的被處理物(化合物)之量變多時，從該被處理物生成的成分有可能對腔室內之減壓環境造成影響。 　　尤其，在朝基板的塗佈物(被處理物)包含聚醯胺酸之情況，因使聚醯胺酸加熱硬化而成為聚醯亞胺之時，會引起脫水反應，故在該反應下生成的水成為水蒸氣，依此有使腔室內之壓力下降之情形。當腔室內之壓力下降時，有使製程之穩定性受損，或使聚醯胺酸加熱硬化而獲得的膜無法確保期望之特性的可能性。 　　如此一來，由於朝基板的塗佈物之硬化條件藉由溫度以外之要素變動，故從使朝基板的塗佈物穩定地硬化之方面來看，在技術性有改善的空間。With the technique disclosed in Patent Document 2, since the temperature rise rate of the infrared heater can be made higher than that of the heating plate, the operation time required for heating the substrate can be shortened. However, as a result of the research of the inventors of this case, it is believed that there is room for improvement in the following points. In recent years, there is a tendency to increase the size of the substrate to be heated due to the efficiency of the manufacturing process, and there is also a tendency to demand the miniaturization of the entire apparatus. Due to these, when the amount of the object to be processed (compound) to be heated increases relative to the storage space of the chamber for storing the substrate, components generated from the object to be processed may affect the decompression environment in the chamber. . In particular, when the coated object (object to be treated) on the substrate contains polyamic acid, when the polyamic acid is heated and hardened to become polyimide, a dehydration reaction will occur, so it is formed under this reaction. The water in the chamber becomes water vapor, which causes the pressure in the chamber to drop. When the pressure in the chamber drops, the stability of the process may be impaired, or the film obtained by heating and hardening the polyamic acid may not ensure desired characteristics. In this way, since the hardening conditions of the coating on the substrate are changed by factors other than temperature, there is room for technical improvement in terms of stably curing the coating on the substrate.

鑒於上述情形，本發明之目的在於提供能夠使朝基板的塗佈物穩定地硬化之基板加熱裝置、基板處理系統及基板加熱方法。 [用以解決課題之手段]In view of the above circumstances, an object of the present invention is to provide a substrate heating device, a substrate processing system, and a substrate heating method capable of stably curing a coating material applied to a substrate. [Means to solve the problem]

與本發明之一態樣有關之基板加熱裝置之特徵在於，包含：腔室，其係在內部形成能夠收容基板之收容空間；減壓部，其係能夠減壓上述收容空間之氛圍；基板加熱部，其係被配置在上述基板之一方面側及另一方面側之至少一方，並且能夠加熱上述基板；壓力檢測部，其係能夠檢測上述收容空間之壓力；及控制部，其係根據上述壓力檢測部之檢測結果，控制上述基板加熱部。A substrate heating device related to an aspect of the present invention is characterized in that it includes: a chamber that forms a storage space capable of storing a substrate inside; a decompression unit that can decompress the atmosphere of the storage space; and a substrate heating a part, which is arranged on at least one of the one side and the other side of the above-mentioned substrate, and can heat the above-mentioned substrate; a pressure detection part, which can detect the pressure of the above-mentioned storage space; and a control part, which is based on the above The detection result of the pressure detection part controls the above-mentioned substrate heating part.

若藉由該構成時，即使在朝基板的塗佈物之硬化條件藉由壓力變動之情況，亦可以根據由於壓力變動所引起的基板之加熱條件而增減基板加熱部之輸出等。因此，可以使朝基板的塗佈物穩定地硬化。With this configuration, even when the hardening conditions of the coating on the substrate are fluctuated by pressure, the output of the substrate heating unit can be increased or decreased according to the heating conditions of the substrate due to pressure fluctuations. Therefore, it is possible to stably harden the coating on the substrate.

在上述基板加熱裝置中，即使上述控制部係根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力檢測部之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，控制上述基板加熱部之輸出及驅動時間之至少一方亦可。 　　本案發明者研究之結果，發現當收容空間之壓力超過壓力臨界值時，在使朝基板的塗佈物加熱硬化而獲得膜之時，出現了該膜無法確保期望之特性的可能性。若藉由該構成時，可以根據與事先算出之收容空間之壓力和基板之溫度和基板之加熱時間的關係有關的資訊，從壓力檢測部之檢測結果，以收容空間之壓力不超過壓力臨界值之方式，增減基板加熱部之輸出或調整驅動時間。因此，可以使朝基板的塗佈物更加穩定地硬化。In the above-mentioned substrate heating apparatus, even if the control unit uses information related to the relationship between the pressure of the storage space calculated in advance, the temperature of the substrate, and the heating time of the substrate, and the detection result of the pressure detection unit, the above-mentioned In order not to exceed the pressure threshold in the storage space, at least one of the output and driving time of the above-mentioned substrate heating unit may be controlled. As a result of research by the inventors of the present application, it has been found that when the pressure in the storage space exceeds the critical pressure value, when the coating material on the substrate is heated and hardened to obtain a film, the film may not be able to ensure desired characteristics. With this configuration, based on the information related to the relationship between the pressure of the storage space calculated in advance, the temperature of the substrate, and the heating time of the substrate, and from the detection results of the pressure detection unit, it can be concluded that the pressure of the storage space does not exceed the critical pressure value. In this way, increase or decrease the output of the substrate heating part or adjust the driving time. Therefore, it is possible to more stably harden the coating on the substrate.

在上述基板加熱裝置中，即使上述基板加熱部包含被配置在上述基板之一方面側的加熱板，和被配置在上述基板之另一方面側，並且能夠藉由紅外線加熱上述基板的紅外線加熱器。 　　若藉由該構成時，因藉由紅外線加熱器被配置在基板之另一方面側，從紅外線加熱器發出的熱，從基板之另一方面側朝向一方面側傳遞，故加熱板所致的加熱和紅外線加熱器所致的加熱相互結合，可以更加有效果地加熱基板。 　　然而，當以烤箱使熱風循環而加熱基板之方式時，有異物藉由熱風之循環而被捲起至基板之收容空間的可能性。對此，若藉由該構成時，因可以在減壓收容空間之氛圍的狀態下，加熱基板，故可以降低異物被捲起至收容空間之風險。因此，從抑制異物附著於腔室之內面或基板的方面上來看為適合。除此之外，因藉由被配置在基板之一方面側的加熱板，可以使基板之加熱溫度在基板之面內均勻化，故可以提升加熱硬化而獲得的膜之特性(以下，也稱為「膜特性」)。例如，藉由使加熱板之一面和基板之第二面抵接之狀態加熱基板，可以提高基板之加熱溫度之面內均勻性。In the substrate heating apparatus described above, even if the substrate heating unit includes a heating plate disposed on one side of the substrate, and an infrared heater disposed on the other side of the substrate and capable of heating the substrate by infrared rays. . With this configuration, since the infrared heater is arranged on the other side of the substrate, the heat emitted from the infrared heater is transferred from the other side to the one side of the substrate, so the heat caused by the heating plate The combination of heating and heating by the infrared heater can heat the substrate more effectively. However, when the substrate is heated by circulating the hot air in the oven, there is a possibility that foreign matter may be rolled up into the receiving space of the substrate by the circulation of the hot air. In contrast, with this configuration, since the substrate can be heated in a state where the atmosphere of the storage space is reduced, the risk of foreign matter being rolled up into the storage space can be reduced. Therefore, it is suitable from the viewpoint of suppressing the attachment of foreign matter to the inner surface of the chamber or the substrate. In addition, since the heating temperature of the substrate can be made uniform within the surface of the substrate by the heating plate arranged on one side of the substrate, it is possible to improve the characteristics of the film obtained by heating and hardening (hereinafter also referred to as is "membrane properties"). For example, by heating the substrate with one surface of the heating plate in contact with the second surface of the substrate, the in-plane uniformity of the heating temperature of the substrate can be improved.

在上述基板加熱裝置中，即使上述控制部係根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力檢測部之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，控制上述加熱板及上述紅外線加熱器之至少一方的驅動亦可。 　　若藉由該構成時，可以根據與事先算出之收容空間之壓力和基板之溫度和基板之加熱時間的關係有關的資訊，從壓力檢測部之檢測結果，以收容空間之壓力不超過壓力臨界值之方式，增減加熱板及紅外線加熱器之至少一方之輸出或調整驅動時間。因此，可以使朝基板的塗佈物更加穩定地硬化。除此之外，因依據壓力檢測部之檢測結果，將加熱板及紅外線加熱器之一方設成導通，將另一方設成斷開，故比起加熱板及紅外線加熱器之雙方設成導通之情況，可以謀求省能源化。In the above-mentioned substrate heating apparatus, even if the control unit uses information related to the relationship between the pressure of the storage space calculated in advance, the temperature of the substrate, and the heating time of the substrate, and the detection result of the pressure detection unit, the above-mentioned To prevent the pressure in the storage space from exceeding a critical pressure value, the driving of at least one of the heating plate and the infrared heater may be controlled. With this configuration, based on the information related to the relationship between the pressure of the storage space calculated in advance, the temperature of the substrate, and the heating time of the substrate, and from the detection results of the pressure detection unit, it can be concluded that the pressure of the storage space does not exceed the critical pressure value. In this way, increase or decrease the output of at least one of the heating plate and the infrared heater or adjust the driving time. Therefore, it is possible to more stably harden the coating on the substrate. In addition, since one of the heating plate and the infrared heater is set to conduction and the other is set to be off according to the detection result of the pressure detection part, it is better to set the heating plate and the infrared heater as conduction. In some cases, energy saving can be sought.

在上述基板加熱裝置中，即使上述腔室內面之至少一部分被設成反射上述紅外線之腔室側反射面亦可。 　　若藉由該構成時，因藉由腔室側反射面被反射之紅外線之至少一部分被基板吸收，故可以促進基板之加熱。另外，可以根據藉由腔室側反射面被反射的紅外線所致的基板之溫度上升量，降低紅外線加熱器之輸出。In the above-mentioned substrate heating apparatus, at least a part of the inner surface of the chamber may be provided as a chamber-side reflective surface that reflects the infrared rays. With this configuration, since at least a part of the infrared rays reflected by the chamber-side reflective surface is absorbed by the substrate, heating of the substrate can be promoted. In addition, the output of the infrared heater can be reduced according to the amount of temperature increase of the substrate due to the infrared rays reflected by the chamber-side reflective surface.

在上述基板加熱裝置中，即使上述加熱板能夠在20℃以上並且300℃以下之範圍加熱上述基板，上述紅外線加熱器能夠在150℃以上並且600℃以下之範圍加熱上述基板亦可。 　　若藉由該構成時，藉由加熱板能夠在20℃以上並且300℃以下之範圍加熱基板，可以穩定地進行除去存在於朝基板的塗佈物之溶劑等之低沸點成分或塗佈物之預備硬化等。除此之外，藉由紅外線加熱器能夠在150℃以上並且600℃以下之範圍加熱基板，可以使朝基板的塗佈物更加穩定地硬化。再者，在塗佈物含有聚醯胺酸之情況，可以穩定地進行醯亞胺化時之分子鏈的再配列，可以更加提升膜特性。In the above-mentioned substrate heating device, the heating plate may heat the substrate in the range of 20°C to 300°C, and the infrared heater may heat the substrate in the range of 150°C to 600°C. With this configuration, the heating plate can heat the substrate in the range of 20°C to 300°C, and it is possible to stably remove low-boiling components such as solvents present in the coating on the substrate or the coating. Ready to harden, etc. In addition, since the infrared heater can heat the substrate in the range of 150° C. to 600° C., the coating on the substrate can be more stably cured. Furthermore, when the coating material contains polyamic acid, the rearrangement of molecular chains during imidization can be performed stably, and the film properties can be further improved.

在上述基板加熱裝置中，即使進一步包含紅外線反射部，該紅外線反射部係被配置在上述加熱板和上述紅外線加熱器之間，並且具有反射朝向上述加熱板之上述紅外線的加熱板側反射面，上述加熱板包含能夠載置上述紅外線反射部之載置面亦可。 　　若藉由該構成時，因藉由包含被配置在加熱板和紅外線加熱器之間，並且反射朝向加熱板之紅外線的加熱板側反射面，可以回避加熱板吸收紅外線之情形，故可以抑制紅外線所致的加熱板之升溫。因此，無須考慮隨著紅外線所致的加熱板之升溫而引起的加熱板之降溫時間。因此，可以使加熱板之降溫所需的作業時間縮短化。除此之外，因藉由加熱板側反射面被反射之紅外線之至少一部分被基板吸收，故可以促進基板之加熱。另外，可以根據藉由加熱板側反射面被反射的紅外線所致的基板之溫度上升量，降低紅外線加熱器之輸出。除此之外，在藉由加熱板包含能夠載置紅外線反射部之載置面，減壓收容空間之氛圍而成為真空狀態之情況，可以使在加熱板的載置面和紅外線反射部之間真空隔熱。即是，可以將在載置面和紅外線反射部之界面的間隙當作隔熱層而發揮功能。因此，可以抑制紅外線所致的加熱板之升溫。另外，在對收容空間供給氮(N2 沖洗)之情況，可以解除載置面和紅外線反射部之間的真空隔熱。因此，可以推定加熱板降溫之時，紅外線反射部也降溫。In the above-mentioned substrate heating apparatus, even if it further includes an infrared ray reflector, the infrared ray reflector is disposed between the above-mentioned heating plate and the above-mentioned infrared heater, and has a heating-plate-side reflective surface that reflects the infrared rays directed toward the heating plate, The heating plate may include a mounting surface on which the infrared reflection unit can be mounted. With this configuration, by including the heating plate side reflective surface disposed between the heating plate and the infrared heater and reflecting infrared rays directed toward the heating plate, it is possible to avoid the situation where the heating plate absorbs infrared rays, so that infrared rays can be suppressed The resulting temperature rise of the heating plate. Therefore, there is no need to consider the cooling time of the heating plate caused by the heating of the heating plate due to infrared rays. Therefore, the working time required for cooling the heating plate can be shortened. In addition, since at least a part of infrared rays reflected by the reflective surface on the heating plate side is absorbed by the substrate, heating of the substrate can be promoted. In addition, the output of the infrared heater can be reduced according to the amount of temperature increase of the substrate due to the infrared rays reflected by the reflective surface on the heating plate side. In addition, when the heating plate includes a mounting surface on which the infrared reflecting portion can be mounted, and the atmosphere of the storage space is reduced to a vacuum state, it is possible to place the heating plate between the mounting surface of the heating plate and the infrared reflecting portion Vacuum insulation. That is, the gap at the interface between the mounting surface and the infrared reflection portion can function as a heat insulating layer. Therefore, the temperature rise of the heating plate due to infrared rays can be suppressed. In addition, when nitrogen is supplied to the storage space (N 2 flushing), the vacuum heat insulation between the mounting surface and the infrared reflection part can be released. Therefore, it can be estimated that when the temperature of the heating plate is lowered, the temperature of the infrared reflection part is also lowered.

在上述基板加熱裝置中，即使僅在上述基板之第一面塗佈被處理物，上述加熱板被配置在與上述基板之第一面相反側的第二面之側亦可。 　　若藉由該構成時，因從加熱板發出的熱從基板之第二面之側朝向第一面之側傳遞，故可以有效果地加熱基板。除此之外，在以加熱板加熱基板之期間，可以效率佳地進行除去存在於朝基板之塗佈物的低沸點成分，或塗佈物之預備硬化、成膜時的脫氣等。In the substrate heating apparatus described above, even if the object to be processed is coated only on the first surface of the substrate, the heating plate may be disposed on the side of the second surface opposite to the first surface of the substrate. With this configuration, since the heat emitted from the heating plate is transmitted from the side of the second surface of the substrate toward the side of the first surface, the substrate can be heated effectively. In addition, while the substrate is heated by the hot plate, it is possible to efficiently remove low-boiling components present in the coating on the substrate, pre-harden the coating, and degas during film formation.

在上述基板加熱裝置中，即使上述加熱板及上述紅外線加熱器之至少一方能夠階段性地加熱上述基板亦可。 　　若藉由該構成時，比起加熱板及紅外線加熱器能夠僅以一定溫度加熱基板之情況，可以效率佳地加熱基板，以適合於朝基板的塗佈物之硬化條件。例如，可以使被塗佈於基板之被處理物階段性地乾燥，可以良好地硬化。In the substrate heating apparatus described above, at least one of the heating plate and the infrared heater may heat the substrate in stages. With this structure, compared with the case where the heating plate and the infrared heater can only heat the substrate at a certain temperature, the substrate can be heated efficiently, so as to be suitable for the hardening conditions of the coating on the substrate. For example, the object to be treated applied on the substrate can be dried stepwise and can be cured favorably.

在上述基板加熱裝置中，即使進一步包含能夠調整上述加熱板及上述紅外線加熱器之至少一方和上述基板的相對位置的位置調整部亦可。 　　若藉由該構成時，比起不具備上述位置調整部之情況，容易調整基板之加熱溫度。例如，在提高基板之加熱溫度之情況，可以使加熱板及紅外線加熱器和基板接近，在降低基板之加熱溫度之情況，可以使加熱板及紅外線加熱器與基板分離。因此，容易階段性地加熱基板。The substrate heating apparatus may further include a position adjustment unit capable of adjusting a relative position between at least one of the heating plate and the infrared heater and the substrate. With this configuration, it is easier to adjust the heating temperature of the substrate than the case without the above-mentioned position adjustment unit. For example, when the heating temperature of the substrate is increased, the heating plate and the infrared heater can be brought close to the substrate, and when the heating temperature of the substrate is lowered, the heating plate and the infrared heater can be separated from the substrate. Therefore, it is easy to heat the substrate step by step.

在上述基板加熱裝置中，即使上述位置調整部進一步包含設成能夠使上述基板在上述加熱板和上述紅外線加熱器之間移動的移動部亦可。 　　若藉由該構成時，藉由使基板在加熱板和紅外線加熱器之間移動，可以在將加熱板及紅外線加熱器之至少一方配置在定位置之狀態下，調整基板之加熱溫度。因此，因無須另外設置能夠移動加熱板及紅外線加熱器之至少一方的裝置，故可以用簡單構成調整基板之加熱溫度。In the substrate heating apparatus described above, the position adjustment unit may further include a moving unit configured to move the substrate between the heating plate and the infrared heater. With this configuration, by moving the substrate between the heating plate and the infrared heater, it is possible to adjust the heating temperature of the substrate with at least one of the heating plate and the infrared heater arranged at a fixed position. Therefore, since there is no need to separately provide a device capable of moving at least one of the heating plate and the infrared heater, the heating temperature of the substrate can be adjusted with a simple configuration.

即使在上述基板加熱裝置中，即使在上述加熱板和上述紅外線加熱器之間，設置有設成能夠搬運上述基板之搬運部，在上述搬運部形成有設成能夠使上述移動部通過的通過部亦可。 　　若藉由該構成時，使基板在加熱板和紅外線加熱器之間移動之情況，因可以使通過部通過，故無須迂迴搬運部移動基板。因此，因無須另外設置用以迂迴搬運部而移動基板之裝置，故可以用簡單構成流暢地進行基板之移動。Even in the above-mentioned substrate heating apparatus, a conveying portion configured to convey the substrate is provided between the heating plate and the infrared heater, and a passing portion configured to allow the moving portion to pass is formed on the conveying portion. also can. With this structure, when the substrate is moved between the heating plate and the infrared heater, since the passing part can pass through, it is not necessary to move the substrate by detouring the conveying part. Therefore, since there is no need to separately provide a device for moving the substrate by detouring the conveyance section, the substrate can be moved smoothly with a simple configuration.

在上述基板加熱裝置中，即使上述移動部包含能夠支持與上述基板之第一面相反側之第二面並且能夠在上述第二面之法線方向移動的複數插銷，上述複數插銷之前端被配置在與上述第二面平行之面內亦可。 　　若藉由該構成時，因可以在穩定地支持基板之狀態，加熱基板，故可以使朝基板的塗佈物穩定地硬化。In the above-mentioned substrate heating apparatus, even if the moving part includes a plurality of pins capable of supporting a second surface opposite to the first surface of the substrate and capable of moving in a direction normal to the second surface, the front ends of the plurality of pins are arranged It may also be in a plane parallel to the above-mentioned second plane. With this structure, since the substrate can be heated in a state where the substrate is stably supported, it is possible to stably harden the coating on the substrate.

在上述基板加熱裝置中，即使在上述加熱板形成在上述第二面之法線方向開口上述加熱板的複數插通孔，上述複數插銷之前端能夠經由上述複數插通孔而抵接於上述第二面亦可。 　　若藉由該構成時，因可以在短時間進行在複數插銷和加熱板之間收授基板，故可以效率佳地調整基板之加熱溫度。In the substrate heating apparatus described above, even if a plurality of insertion holes opening the heating plate are formed in the heating plate in a direction normal to the second surface, the front ends of the plurality of pins can be brought into contact with the first contact pin through the plurality of insertion holes. Both sides are also available. With this configuration, since substrates can be sent and received between multiple pins and heating plates in a short time, the heating temperature of the substrates can be adjusted efficiently.

在上述基板加熱裝置中，即使進一步包含能夠檢測上述基板之溫度的溫度檢測部亦可。 　　若藉由該構成時，可以以實時地掌握基板之溫度。例如，藉由根據溫度檢測部之檢測結果加熱基板，可以抑制基板之溫度偏離目標值。In the substrate heating device described above, a temperature detection unit capable of detecting the temperature of the substrate may be further included. With this configuration, the temperature of the substrate can be grasped in real time. For example, by heating the substrate based on the detection result of the temperature detection unit, it is possible to suppress the temperature of the substrate from deviating from the target value.

在上述基板加熱裝置中，即使上述基板及上述基板加熱部被收容在共同的上述腔室亦可。 　　若藉由該構成時，可以在共同的腔室內對基板一併進行根據基板加熱部的加熱處理。例如，可以在共同的腔室內對基板一併進行加熱板所致的加熱處理和紅外線加熱器所致的加熱處理。即是，如加熱板及紅外線加熱器被收容於彼此不同的腔室之情況般，不需要用以在不同的兩個腔室間搬運基板之時間。因此，可以效率更佳地進行基板之加熱處理。除此之外，比起具備有不同的兩個腔室之情況，可以使裝置全體小型化。In the substrate heating apparatus described above, the substrate and the substrate heating unit may be housed in the same chamber. With this configuration, the substrates can be collectively subjected to heat treatment by the substrate heating unit in a common chamber. For example, the heat treatment by a hot plate and the heat treatment by an infrared heater may be performed collectively on the substrate in a common chamber. That is, as in the case where the hot plate and the infrared heater are housed in different chambers, it does not require time for transferring the substrate between two different chambers. Therefore, the heat treatment of the substrate can be performed more efficiently. In addition, compared with the case where two different chambers are provided, the overall size of the device can be reduced.

與本發明之一態樣有關的基板處理系統之特徵包含上述基板加熱裝置。A substrate processing system according to an aspect of the present invention includes the aforementioned substrate heating device.

若藉由該構成時，藉由包含上述基板加熱裝置，可以提供具備有能夠使朝基板的塗佈物穩定地硬化之基板加熱裝置的基板處理系統。According to this configuration, by including the above-mentioned substrate heating device, it is possible to provide a substrate processing system including a substrate heating device capable of stably curing the coating on the substrate.

與本發明之一態樣有關之基板加熱方法之特徵在於，包含將基板收容在腔室之內部之收容空間的收容工程，和減壓上述收容空間之氛圍的減壓工程，和使用被配置在上述基板之一方面側及另一方面側之至少一方的基板加熱部而加熱上述基板之基板加熱工程，和檢測上述收容空間之壓力的壓力檢測工程，和根據上述壓力之檢測結果而控制上述基板加熱部的控制工程。A substrate heating method related to an aspect of the present invention is characterized in that it includes a storage process for storing the substrate in a storage space inside a chamber, a decompression process for decompressing the atmosphere of the storage space, and using a A substrate heating process of heating the substrate by at least one of the substrate heating parts on one side and the other side of the substrate, a pressure detection process of detecting the pressure of the storage space, and controlling the substrate based on the detection result of the pressure Control engineering in the heating section.

若藉由該方法時，即使在朝基板的塗佈物之硬化條件藉由壓力變動之情況，亦可以根據由於壓力變動所致的基板之加熱條件而增減基板加熱部之輸出等。因此，可以使朝基板的塗佈物穩定地硬化。According to this method, even when the hardening condition of the coating on the substrate is changed by the pressure, the output of the substrate heating unit can be increased or decreased according to the heating condition of the substrate due to the pressure change. Therefore, it is possible to stably harden the coating on the substrate.

在上述基板加熱方法中，即使在上述控制工程中，根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，控制上述基板加熱部之輸出及驅動時間之至少一方亦可。 　　若藉由該方法時，可以根據與事先算出之收容空間之壓力和基板之溫度和基板之加熱時間的關係有關的資訊，從在壓力檢測工程之壓力的檢測結果，以收容空間之壓力不超過壓力臨界值之方式，增減基板加熱部之輸出或調整驅動時間。因此，可以使朝基板的塗佈物更加穩定地硬化。In the above-mentioned substrate heating method, even in the above-mentioned control process, the above-mentioned In order not to exceed the pressure threshold in the storage space, at least one of the output and driving time of the above-mentioned substrate heating unit may be controlled. If this method is used, according to the information related to the relationship between the pressure of the storage space calculated in advance, the temperature of the substrate, and the heating time of the substrate, from the test results of the pressure in the pressure testing process, it can be concluded that the pressure of the storage space does not exceed The way of the pressure threshold is to increase or decrease the output of the substrate heating part or to adjust the driving time. Therefore, it is possible to more stably harden the coating on the substrate.

在上述基板加熱方法中，即使上述基板加熱部包含被配置在上述基板之一方面側的加熱板，和被配置在上述基板之另一方面側，並且能夠藉由紅外線加熱上述基板之紅外線加熱器，在上述控制工程中，根據事先算出之上述收容空間壓力和上述基板之溫度和上述基板之加熱時間之關係的資訊，和上述壓力之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，切換上述加熱板及上述紅外線加熱器之至少一方的驅動亦可。 　　若藉由該方法時，因可以在減壓收容空間之氛圍的狀態下，加熱基板，故可以降低異物被捲起至收容空間之風險。因此，從抑制異物附著於腔室之內面或基板的方面上來看為適合。除此之外，因藉由被配置在基板之一方面側的加熱板，可以使基板之加熱溫度在基板之面內均勻化，故可以提升膜特性。例如，藉由使加熱板之一面和基板之第二面抵接之狀態加熱基板，可以提高基板之加熱溫度之面內均勻性。除此之外，可以根據與事先算出之收容空間之壓力和基板之溫度和基板之加熱時間的關係有關的資訊，從在壓力檢測工程中之壓力的檢測結果，以收容空間之壓力不超過壓力臨界值之方式，增減加熱板及紅外線加熱器之至少一方之輸出或調整驅動時間。因此，可以使朝基板的塗佈物更加穩定地硬化。除此之外，因依據在壓力檢測工程之壓力的檢測結果，將加熱板及紅外線加熱器之一方設成導通，將另一方設成斷開，故比起加熱板及紅外線加熱器之雙方設成導通之情況，可以謀求省能源化。 [發明之效果]In the substrate heating method described above, even if the substrate heating section includes a heating plate disposed on one side of the substrate, and an infrared heater disposed on the other side of the substrate and capable of heating the substrate by infrared rays , in the above-mentioned control process, according to the previously calculated information on the relationship between the pressure of the above-mentioned storage space, the temperature of the above-mentioned substrate, and the heating time of the above-mentioned substrate, and the detection results of the above-mentioned pressure, it is determined that the pressure of the above-mentioned storage space does not exceed the pressure threshold. Alternatively, the driving of at least one of the heating plate and the infrared heater may be switched. With this method, since the substrate can be heated in a state where the atmosphere of the storage space is decompressed, the risk of foreign matter being rolled up into the storage space can be reduced. Therefore, it is suitable from the viewpoint of suppressing the attachment of foreign matter to the inner surface of the chamber or the substrate. In addition, since the heating temperature of the substrate can be made uniform within the surface of the substrate by the heating plate disposed on one side of the substrate, film characteristics can be improved. For example, by heating the substrate with one surface of the heating plate in contact with the second surface of the substrate, the in-plane uniformity of the heating temperature of the substrate can be improved. In addition, based on the information related to the relationship between the pressure of the storage space calculated in advance, the temperature of the substrate, and the heating time of the substrate, the pressure of the storage space does not exceed the pressure The way of critical value is to increase or decrease the output of at least one of the heating plate and the infrared heater or to adjust the driving time. Therefore, it is possible to more stably harden the coating on the substrate. In addition, according to the pressure test results in the pressure test project, one of the heating plate and the infrared heater is set to conduction, and the other is set to be off. In the case of conduction, energy saving can be sought. [Effect of Invention]

若藉由本發明時，可以提供能夠使朝基板的塗佈物穩定地硬化之基板加熱裝置、基板處理系統及基板加熱方法。According to the present invention, it is possible to provide a substrate heating device, a substrate processing system, and a substrate heating method capable of stably curing a coating on a substrate.

以下，參照圖面說明本發明之實施型態。在以下之說明中，設置XYZ直角座標系，一面參照該XYZ直角座標系一面針對各構件之位置關係進行說明。將水平面內之特定方向設成X方向，將在水平面內與X方向正交之方向設成Y方向，將各與X方向及Y方向正交之方向(即是，垂直方向)設成Z方向。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the XYZ rectangular coordinate system is set, and the positional relationship of each member is demonstrated referring this XYZ rectangular coordinate system. Set a specific direction in the horizontal plane as the X direction, set the direction orthogonal to the X direction in the horizontal plane as the Y direction, and set each direction orthogonal to the X direction and Y direction (that is, the vertical direction) as the Z direction .

(第一實施型態) ＜基板加熱裝置＞ 　　圖1為與第一實施型態有關之基板加熱裝置1之斜視圖。 　　如圖1所示般，基板加熱裝置1具備有腔室2、基板搬出搬入部24、減壓部3、氣體供給部4、氣體擴散部60(參照圖2)、加熱板5、紅外線加熱器6、位置調整部7、搬運部8、溫度檢測部9、壓力檢測部14、氣體液化回收部11、紅外線反射部30、加熱單元80、隔熱構件26、蓋構件27及控制部15。控制部15統籌控制基板加熱裝置1之構成要素。在圖1中，以二點鏈線表示腔室2之一部分(除頂板21之一部分的部分)、基板搬出搬入部24及氣體供給部4。(First Embodiment) <Substrate Heating Device> Fig. 1 is a perspective view of a substrate heating device 1 related to a first embodiment. As shown in FIG. 1, the substrate heating apparatus 1 includes a chamber 2, a substrate loading/unloading unit 24, a decompression unit 3, a gas supply unit 4, a gas diffusion unit 60 (see FIG. 2), a heating plate 5, an infrared heater 6. Position adjustment unit 7 , conveyance unit 8 , temperature detection unit 9 , pressure detection unit 14 , gas liquefaction recovery unit 11 , infrared reflection unit 30 , heating unit 80 , heat insulating member 26 , cover member 27 and control unit 15 . The control unit 15 overall controls the components of the substrate heating device 1 . In FIG. 1 , a portion of the chamber 2 (a portion excluding a portion of the top plate 21 ), the substrate loading/unloading section 24 , and the gas supply section 4 are shown by chain lines.

＜腔室＞ 　　腔室2能夠收容基板10、加熱板5及紅外線加熱器6。在腔室2之內部形成能夠收容基板10之收容空間2S。基板10、加熱板5及紅外線加熱器6被收容在共同的腔室2。腔室2被形成長方體之箱狀。具體而言，腔室2係藉由矩形板狀之頂板21、與頂板21相向之矩形板狀之底板22，和與頂板21及底板22之外周緣連結的矩形框狀之周壁23而形成。例如，在周壁23之-X方向側，設置有用以對腔室2進行基板10之搬入及搬出的基板搬出搬入口23a。<Chamber> The chamber 2 can accommodate the substrate 10 , the heating plate 5 and the infrared heater 6 . A housing space 2S capable of housing the substrate 10 is formed inside the chamber 2 . The substrate 10 , the heating plate 5 and the infrared heater 6 are accommodated in a common chamber 2 . The chamber 2 is formed into a box shape of a cuboid. Specifically, the chamber 2 is formed by a rectangular plate-shaped top plate 21, a rectangular plate-shaped bottom plate 22 facing the top plate 21, and a rectangular frame-shaped peripheral wall 23 connected with the outer peripheral edges of the top plate 21 and the bottom plate 22. For example, on the −X direction side of the peripheral wall 23 , a substrate carrying-in/out port 23 a for carrying in and carrying out the substrate 10 into and out of the chamber 2 is provided.

腔室2被構成能夠在密閉空間收容基板10。例如，藉由以熔接等無間隙地結合頂板21、底板22及周壁23之各連接部，可以提升腔室2內之氣密性。The chamber 2 is configured to accommodate the substrate 10 in a closed space. For example, the airtightness in the chamber 2 can be improved by joining the connection portions of the top plate 21 , the bottom plate 22 , and the peripheral wall 23 without gaps by welding or the like.

腔室2之內面被構成反射來自紅外線加熱器6之紅外線的腔室側反射面2a(參照圖2)。例如，腔室2之內面被構成根據鋁等之金屬的鏡面(反射面)。依此，比起腔室2之內面能夠吸收紅外線之情況，可以提高腔室2內之溫度均勻性。The inner surface of the chamber 2 is configured as a chamber-side reflective surface 2a (see FIG. 2 ) that reflects infrared rays from the infrared heater 6 . For example, the inner surface of the chamber 2 is constituted by a mirror surface (reflection surface) made of metal such as aluminum. According to this, compared with the case where the inner surface of the chamber 2 can absorb infrared rays, the temperature uniformity in the chamber 2 can be improved.

腔室側反射面2a被設置在腔室2之內面全體。腔室側反射面2a被施予鏡面加工。具體而言，腔室側反射面2a之表面粗度(Ra)被設成0.01μm左右、Rmax0.1μm左右。另外，腔室側反射面2a之表面粗度(Ra)係以東京精密公司製造之測量機器(SURFCOM 1500SD2)進行測量。The chamber-side reflective surface 2 a is provided on the entire inner surface of the chamber 2 . The chamber-side reflective surface 2a is given a mirror finish. Specifically, the surface roughness (Ra) of the chamber-side reflective surface 2a is set to about 0.01 μm, and Rmax is set to about 0.1 μm. In addition, the surface roughness (Ra) of the chamber side reflective surface 2a was measured with the measuring machine (SURFCOM 1500SD2) manufactured by Tokyo Precision Co., Ltd.

＜基板搬出搬入部＞ 　　基板搬出搬入部24被設置在周壁23之-X方向側。基板搬出搬入部24成為能夠將基板10搬入至收容空間2S，並且能夠將基板10從收容空間2S排出。例如，基板搬出搬入部24被設成能夠移動以便能夠開關基板搬出搬入口23a。例如，基板搬出搬入部24係能夠開關基板搬出搬入口23a之擋板。具體而言，基板搬出搬入部24被設成能夠在沿著周壁23之方向(Z方向或Y方向)移動。<Substrate Unloading/In/Out Section> The board out/in/out section 24 is provided on the -X direction side of the peripheral wall 23 . The substrate carrying-in/out unit 24 is capable of carrying the substrate 10 into the storage space 2S and discharging the substrate 10 from the storage space 2S. For example, the substrate carry-out unit 24 is provided movable so that the substrate carry-out port 23 a can be opened and closed. For example, the substrate carry-out unit 24 is a shutter capable of opening and closing the substrate carry-out port 23a. Specifically, the substrate loading/unloading unit 24 is provided so as to be movable in a direction (Z direction or Y direction) along the peripheral wall 23 .

＜減壓部＞ 　　減壓部3能夠減壓腔室2內。減壓部3包含被連接於腔室2之真空配管3a。真空配管3a係在Z方向延伸的圓筒狀的配管。例如，真空配管3a係在X方向隔著間隔而配置複數個。在圖1中，僅表示一個真空配管3a。另外，不限定於真空配管3a之設置數量。<Decompression Unit> The decompression unit 3 can depressurize the inside of the chamber 2 . The decompression unit 3 includes a vacuum pipe 3 a connected to the chamber 2 . The vacuum pipe 3a is a cylindrical pipe extending in the Z direction. For example, a plurality of vacuum pipes 3 a are arranged at intervals in the X direction. In FIG. 1, only one vacuum pipe 3a is shown. In addition, it is not limited to the installation number of the vacuum piping 3a.

圖1所示之真空配管3a被連接於底板22之-X方向側之靠近基板搬出搬入口23a的部分。另外，真空配管3a之連接部位不限定於底板22之-X方向側之靠近基板搬出搬入口23a之部分。若真空配管3a連接於腔室2即可。The vacuum piping 3 a shown in FIG. 1 is connected to a portion of the base plate 22 on the −X direction side close to the substrate loading and unloading port 23 a. In addition, the connection part of the vacuum piping 3a is not limited to the part close to the board|substrate carrying-out port 23a on the -X direction side of the base plate 22. As shown in FIG. What is necessary is just to connect the vacuum piping 3a to the chamber 2.

例如，減壓部3具備泵浦機構等之減壓機構。減壓機構具備有真空泵浦13。真空泵浦13係被連接於真空配管3a中從與腔室2之連接部(上端部)相反側之部分(下端部)延伸的管線。For example, the decompression unit 3 includes a decompression mechanism such as a pump mechanism. The decompression mechanism has a vacuum pump 13 . The vacuum pump 13 is connected to a line extending from a portion (lower end) of the vacuum piping 3 a opposite to a connection portion (upper end) of the chamber 2 .

減壓部3能夠減壓被塗佈用以形成聚醯亞胺膜(聚醯亞胺)之溶液(以下，稱為「聚醯亞胺形成用液」)之基板10之收容空間2S的氛圍。例如，聚醯亞胺形成用液包含聚醯胺酸或聚醯亞胺粉。聚醯亞胺形成用液僅被塗佈在構成矩形板狀之基板10之第一面10a(上面)。 　　另外，朝基板10的塗佈物(被處理物)不限定於聚醯亞胺形成用液，若為在基板10形成特定膜者即可。The decompression unit 3 can depressurize the atmosphere of the accommodation space 2S of the substrate 10 to which the solution for forming the polyimide film (polyimide) (hereinafter referred to as "polyimide forming solution") is applied. . For example, the polyimide forming liquid contains polyamic acid or polyimide powder. The polyimide forming liquid is applied only on the first surface 10a (upper surface) of the substrate 10 constituting a rectangular plate shape. In addition, the object to be coated on the substrate 10 (object to be processed) is not limited to the polyimide forming liquid, as long as it forms a specific film on the substrate 10.

再者，減壓部3雖然設成能夠減壓收容空間2S之氛圍，但是即使另外在該減壓部3內，設置對收容空間2S供給氮(N2 )、氦(He)、氬(Ar)等之惰性氣體的機構(以下，也稱為「惰性氣體供給機構」)亦可。依此，可以將收容空間2S調整成期望的壓力條件。在後述之基板加熱方法中的減壓工程、基板加熱工程、腔室加熱工程、壓力檢測工程及控制工程之各工程中，即使進行如此的壓力條件之調整亦可。 　　再者，即使如後述的氣體供給部4般，與減壓部3不同地設置惰性氣體供給機構亦可。Furthermore, although the decompression unit 3 is set to decompress the atmosphere of the storage space 2S, even in the decompression unit 3, nitrogen (N 2 ), helium (He), argon (Ar) are provided to the storage space 2S. ) and other inert gas mechanisms (hereinafter, also referred to as "inert gas supply mechanism") may also be used. Accordingly, the storage space 2S can be adjusted to a desired pressure condition. In each of the decompression process, substrate heating process, chamber heating process, pressure detection process, and control process in the substrate heating method described later, it is also possible to adjust such pressure conditions. In addition, an inert gas supply mechanism may be provided differently from the decompression part 3 like the gas supply part 4 mentioned later.

＜氣體供給部＞ 　　氣體供給部4能夠調整腔室2之內部氛圍之狀態。氣體供給部4包含被連接於腔室2之氣體供給配管4a。氣體供給配管4a係在X方向延伸的圓筒狀的配管。氣體供給配管4a被連接於周壁23之+X方向側之靠近頂板21之部分。另外，氣體供給配管4a之連接部位不限定於被周壁23之+X方向側之靠近頂板21之部分。若氣體供給配管4a連接於腔室2即可。<Gas Supply Unit> The gas supply unit 4 can adjust the state of the internal atmosphere of the chamber 2 . The gas supply unit 4 includes a gas supply pipe 4 a connected to the chamber 2 . The gas supply pipe 4a is a cylindrical pipe extending in the X direction. The gas supply pipe 4 a is connected to a portion close to the top plate 21 on the +X direction side of the peripheral wall 23 . In addition, the connection part of the gas supply pipe 4a is not limited to the part close to the top plate 21 on the +X direction side of the surrounding wall 23. As shown in FIG. What is necessary is just to connect the gas supply pipe 4a to the chamber 2.

氣體供給部4係藉由對收容空間2S供給惰性氣體而能夠調整收容空間2S之狀態。氣體供給部4係對腔室2內供給氮(N2 )、氦(He)、氬(Ar)等之惰性氣體。另外，氣體供給部4即使藉由在基板降溫時供給氣體，在基板冷卻使用上述氣體亦可。The gas supply unit 4 can adjust the state of the storage space 2S by supplying an inert gas to the storage space 2S. The gas supply unit 4 supplies an inert gas such as nitrogen (N 2 ), helium (He), or argon (Ar) into the chamber 2 . In addition, the gas supply unit 4 may supply the gas when the temperature of the substrate is lowered, and the gas may be used for cooling the substrate.

藉由氣體供給部4能夠調整腔室2之內部氛圍之氧濃度。腔室2之內部氛圍之氧濃度(質量基準)越低越佳。具體而言，以將腔室2之內部氛圍之氧濃度設成100ppm以下為佳，設成20ppm以下為更佳。 　　例如，如後述般，在使被塗佈在基板10之聚醯亞胺形成用液硬化之時的氛圍，藉由將氧濃度如此地設成較佳的上限以下，可以容易進行聚醯亞胺形成用液之硬化。The oxygen concentration of the internal atmosphere of the chamber 2 can be adjusted by the gas supply unit 4 . The lower the oxygen concentration (mass basis) of the inner atmosphere of the chamber 2, the better. Specifically, the oxygen concentration in the atmosphere inside the chamber 2 is preferably 100 ppm or less, more preferably 20 ppm or less. For example, as will be described later, in the atmosphere when the polyimide forming liquid coated on the substrate 10 is hardened, the polyimide can be easily formed by setting the oxygen concentration below the preferable upper limit. Forming the hardening of the liquid.

＜氣體擴散部＞ 　　如圖2所示般，氣體供給配管4a之-X方向側突出至腔室2內。氣體擴散部60被連接於在腔室2內的氣體供給配管4a之突出端。氣體擴散部60在腔室2內被配置在靠近頂板21之部分。氣體擴散部60在腔室2內被配置在紅外線加熱器6和搬運部8之間。氣體擴散部60係將從氣體供給配管4a被供給之惰性氣體朝向基板10擴散。<Gas Diffusion Portion> As shown in FIG. 2 , the -X direction side of the gas supply pipe 4 a protrudes into the chamber 2 . The gas diffuser 60 is connected to the protruding end of the gas supply pipe 4 a in the chamber 2 . The gas diffuser 60 is arranged at a portion close to the top plate 21 in the chamber 2 . The gas diffusion unit 60 is arranged between the infrared heater 6 and the conveyance unit 8 in the chamber 2 . The gas diffuser 60 diffuses the inert gas supplied from the gas supply pipe 4 a toward the substrate 10 .

氣體擴散部60具備在X方向延伸之圓筒狀之擴散管61、封閉擴散管61之-X方向端的蓋部62，和連結擴散管61之+X方向端和氣體供給配管4a之-X方向端(突出端)之連結部63。擴散管61之外徑大於氣體供給配管4a之外徑。在擴散管61之-Z方向側(下側)形成有複數細孔(無圖示)。即是，擴散管61之下部被設成多孔狀(多孔質體)。氣體供給配管4a之內部空間經由連結部63而與擴散管61內連通。The gas diffuser 60 includes a cylindrical diffuser 61 extending in the X direction, a cover 62 that closes the end of the diffuser 61 in the -X direction, and connects the end of the diffuser 61 in the +X direction with the gas supply pipe 4a in the -X direction. The connecting portion 63 of the end (protruding end). The outer diameter of the diffusion pipe 61 is larger than the outer diameter of the gas supply pipe 4a. A plurality of pores (not shown) are formed on the −Z direction side (lower side) of the diffuser pipe 61 . That is, the lower part of the diffusion pipe 61 is made porous (porous body). The inner space of the gas supply pipe 4 a communicates with the inside of the diffuser pipe 61 through the connecting portion 63 .

從氣體供給配管4a被供給之惰性氣體經由連結部63而進入擴散管61內。進入擴散管61內之惰性氣體通過被形成在擴散管61之下部的複數細孔而朝下方擴散。即是，從氣體供給配管4a被供給之惰性氣體藉由通過擴散管61，朝向基板10擴散。The inert gas supplied from the gas supply pipe 4 a enters into the diffusion pipe 61 through the connection portion 63 . The inert gas entering the diffusion tube 61 diffuses downward through a plurality of fine holes formed in the lower part of the diffusion tube 61 . That is, the inert gas supplied from the gas supply pipe 4 a diffuses toward the substrate 10 by passing through the diffusion pipe 61 .

＜熱板＞ 　　如圖1所示般，加熱板5被配置在腔室2內之下方。加熱板5被配置在基板10之一方面側，並且能夠加熱基板10的基板加熱部。加熱板5能夠以第一溫度加熱基板10。加熱板5係能夠階段性地加熱基板10。例如，包含第一溫度的溫度範圍係20℃以上並且300℃以下的範圍。加熱板5被配置在與基板10之第一面10a相反側之第二面10b(下面)之側。加熱板5被配置在腔室2之底板22之側。<Hot plate> As shown in FIG. 1 , the heated plate 5 is disposed below the inside of the chamber 2 . The heating plate 5 is disposed on one side of the substrate 10 and can heat a substrate heating portion of the substrate 10 . The heating plate 5 is capable of heating the substrate 10 at a first temperature. The heating plate 5 can heat the substrate 10 step by step. For example, the temperature range including the first temperature is a range from 20°C to 300°C. The heating plate 5 is arranged on the side of the second surface 10b (lower surface) opposite to the first surface 10a of the substrate 10 . The heating plate 5 is arranged on the side of the bottom plate 22 of the chamber 2 .

加熱板5被構成矩形板狀。加熱板5能夠從下方支持紅外線反射部30。The heating plate 5 is formed in a rectangular plate shape. The heating plate 5 can support the infrared reflection part 30 from below.

圖3為表示加熱板5及其周邊構造的側面圖。 　　如圖3所示般，加熱板5具備加熱源亦即加熱器5b、覆蓋加熱器5b的底板5c。 　　加熱器5b係與XY平面平行的面狀發熱體。 　　底板5c具備從上方覆蓋加熱器5b之上面板5d，和從下方覆蓋加熱器5b的下面板5e。上面板5d及下面板5e構成矩形板狀。上面板5d之厚度比下面板5e之厚度厚。FIG. 3 is a side view showing the heating plate 5 and its surrounding structure. As shown in Fig. 3, the heating plate 5 includes a heater 5b which is a heating source, and a bottom plate 5c covering the heater 5b. The heater 5b is a planar heating element parallel to the XY plane. The bottom plate 5c has an upper panel 5d covering the heater 5b from above and a lower panel 5e covering the heater 5b from below. The upper panel 5d and the lower panel 5e form a rectangular plate shape. The upper panel 5d is thicker than the lower panel 5e.

另外，在圖3中，符號18表示能夠檢測在加熱板5之加熱器之溫度的加熱器溫度檢測部，符號19表示能夠檢測在加熱板5之上面板5d之溫度的板溫度檢測部。例如，加熱器溫度檢測部18及板溫度檢測部19係熱電偶等的接觸式溫度感測器。In addition, in FIG. 3 , reference numeral 18 denotes a heater temperature detection section capable of detecting the temperature of the heater on the heating plate 5 , and reference numeral 19 denotes a plate temperature detection section capable of detecting the temperature of the panel 5 d on the heating plate 5 . For example, the heater temperature detection unit 18 and the panel temperature detection unit 19 are contact temperature sensors such as thermocouples.

圖4為加熱板5之上視圖。如圖4所示般，加熱板5(即是，上面板5d)具備有能夠載置紅外線反射部30(參照圖3)之載置面5a(上面)。載置面5a構成沿著紅外線反射部30之背面的平坦面。載置面5a被施予陽極氧化處理。載置面5a包含在載置面5a之面內被區劃的複數(例如，在本實施型態中為4個)之載置區域A1、A2、A3、A4。載置區域A1、A2、A3、A4構成在俯視觀看下於X方向具有長邊的長方形形狀。另外，載置區域A1、A2、A3、A4之數量不限定於4個，可以適當變更。FIG. 4 is a top view of the heating plate 5 . As shown in FIG. 4 , the heating plate 5 (that is, the upper panel 5 d ) has a mounting surface 5 a (upper surface) on which the infrared reflection unit 30 (see FIG. 3 ) can be mounted. The mounting surface 5 a constitutes a flat surface along the back surface of the infrared reflection unit 30 . The mounting surface 5a is anodized. The mounting surface 5a includes a plurality of (for example, four in this embodiment) mounting areas A1, A2, A3, and A4 partitioned within the surface of the mounting surface 5a. Mounting area|region A1, A2, A3, A4 comprises the rectangular shape which has a long side in X direction by planar view. In addition, the number of placement areas A1, A2, A3, and A4 is not limited to four, and can be appropriately changed.

＜紅外線加熱器＞ 　　如圖1所示般，紅外線加熱器6被配置在腔室2內之上方。紅外線加熱器6能夠藉由紅外線加熱基板10。紅外線加熱器6係被配置在基板10之另一方面側，並且能夠加熱基板10的基板加熱部。紅外線加熱器6係能夠以高於第一溫度的第二溫度加熱基板10。紅外線加熱器6獨立於加熱板5而另外設置。紅外線加熱器6能夠階段性地加熱基板10。例如，包含第二溫度的溫度範圍係200℃以上並且600℃以下的範圍。紅外線加熱器6被配置在基板10之第一面10a之側。紅外線加熱器6被配置在基板2之頂板21之側。<Infrared Heater> As shown in FIG. 1 , the infrared heater 6 is disposed above the inside of the chamber 2 . The infrared heater 6 can heat the substrate 10 by infrared rays. The infrared heater 6 is disposed on the other side of the substrate 10 and can heat a substrate heating portion of the substrate 10 . The infrared heater 6 is capable of heating the substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 is provided separately from the heating plate 5 . The infrared heater 6 can heat the substrate 10 in stages. For example, the temperature range including the second temperature is a range from 200°C to 600°C. The infrared heater 6 is disposed on the side of the first surface 10 a of the substrate 10 . The infrared heater 6 is arranged on the side of the top plate 21 of the substrate 2 .

紅外線加熱器6被支撐於頂板21。紅外線加熱器6和頂板21之間，設置有紅外線加熱器6之支持構件(無圖示)。紅外線加熱器6在腔室2內之靠近頂板21被固定於定位置。例如，紅外線加熱器6之峰值波長範圍為1.0μm以上並且4μm以下之範圍。另外，紅外線加熱器6之峰值波長範圍不限定於上述範圍，可以因應要求規格而設定成各種範圍。The infrared heater 6 is supported on the top plate 21 . A support member (not shown) for the infrared heater 6 is provided between the infrared heater 6 and the top plate 21 . The infrared heater 6 is fixed in a fixed position near the top plate 21 in the chamber 2 . For example, the peak wavelength range of the infrared heater 6 is a range of not less than 1.0 μm and not more than 4 μm. In addition, the peak wavelength range of the infrared heater 6 is not limited to the above-mentioned range, and can be set in various ranges according to required specifications.

＜位置調整部＞ 　　位置調整部7被配置在腔室2之下方。位置調整部7能夠調整加熱板5及紅外線加熱器6和基板10之相對位置。位置調整部7具備移動部7a和驅動部7b。移動部7a係在上下(Z方向)延伸之柱狀的構件。移動部7a之上端被固定在加熱板5之下面。驅動部7b能夠使移動部7a在上下移動。移動部7a設成能夠在加熱板5和紅外線加熱器6之間移動基板10。具體而言，移動部7a在基板10被支持於紅外線反射部30之狀態下，藉由驅動部7b之驅動，使基板10上下移動(參照圖12及圖13)。<Position Adjustment Unit> The position adjustment unit 7 is disposed below the chamber 2 . The position adjustment unit 7 can adjust the relative positions of the heating plate 5 , the infrared heater 6 and the substrate 10 . The position adjustment unit 7 includes a moving unit 7a and a driving unit 7b. The moving part 7a is a columnar member extending up and down (Z direction). The upper end of the moving portion 7a is fixed under the heating plate 5 . The drive part 7b can move the moving part 7a up and down. The moving part 7 a is provided so as to be able to move the substrate 10 between the heating plate 5 and the infrared heater 6 . Specifically, the moving part 7a moves the substrate 10 up and down by driving the driving part 7b in a state where the substrate 10 is supported by the infrared reflection part 30 (see FIGS. 12 and 13 ).

驅動部7b被配置在腔室2之外部。因此，假設隨著驅動部7b之驅動，產生微粒，藉由將腔室2內設成密封空間，亦可以迴避微粒侵入至腔室2內。The driving unit 7 b is arranged outside the chamber 2 . Therefore, assuming that particles are generated along with the driving of the drive unit 7b, the intrusion of the particles into the chamber 2 can also be avoided by providing the inside of the chamber 2 as a sealed space.

＜搬運部＞ 　　搬運部8係在腔室2內，被配置在加熱板5和紅外線加熱器6之間。搬運部8能夠搬運基板10。在搬運部8形成有設成能夠使移動部7a通過之通過部8h。搬運部8具備沿著基板10之搬運方向亦即X方向而配置的複數搬運滾輪8a。<Conveying Unit> The conveying unit 8 is located in the chamber 2 and is arranged between the heating plate 5 and the infrared heater 6 . The conveyance unit 8 can convey the substrate 10 . The conveyance part 8 is formed with the passing part 8h provided so that the moving part 7a may pass. The conveyance part 8 is equipped with the some conveyance roller 8a arrange|positioned along the X direction which is the conveyance direction of the board|substrate 10.

複數搬運滾輪8a在周壁23之+Y方向側和-Y方向側分離配置。即是，通過部8h係周壁23之+Y方向側之搬運滾輪8a，和周壁23之-Y方向側之搬運滾輪8a之間的空間。The plurality of conveyance rollers 8 a are separately arranged on the +Y direction side and the −Y direction side of the peripheral wall 23 . That is, the passing portion 8h is a space between the conveyance roller 8a on the +Y direction side of the peripheral wall 23 and the conveyance roller 8a on the −Y direction side of the peripheral wall 23 .

例如，在周壁23之+Y方向側及-Y方向側分別沿著X方向隔著間隔配置有在Y方向延伸之複數軸桿(無圖示)。各搬運滾輪8a成為藉由驅動機構(無圖示)，繞著各軸桿旋轉驅動。For example, a plurality of shafts (not shown) extending in the Y direction are arranged at intervals along the X direction on the +Y direction side and the −Y direction side of the peripheral wall 23 . Each conveyance roller 8a is rotationally driven around each shaft by a drive mechanism (not shown).

圖5為用以說明搬運滾輪8a、基板10及加熱板5之配置關係的圖示。圖5相當於基板加熱裝置1(參照圖1)之上視圖。為了方便，在圖5中，以二點鏈線表示腔室2。 　　在圖5中，符號L1係周壁23之+Y方向側之搬運滾輪8a，和周壁23之-Y方向側之搬運滾輪8a分離之間隔(以下，稱為「滾輪分離間隔」)。再者，符號L2係基板10之Y方向之長度(以下，稱為「基板長度」)。再者，符號L3係加熱板5之Y方向之長度(以下，稱為「加熱板長度」)。另外，加熱板長度L3係與紅外線反射部30之Y方向之長度實質上相同的長度。FIG. 5 is a diagram for explaining the arrangement relationship of the conveyance roller 8a, the substrate 10, and the heating plate 5. As shown in FIG. FIG. 5 corresponds to a top view of the substrate heating apparatus 1 (see FIG. 1 ). For convenience, in FIG. 5 , the chamber 2 is indicated by a two-dot chain line. In FIG. 5 , symbol L1 is the distance between the conveyance roller 8a on the +Y direction side of the peripheral wall 23 and the conveyance roller 8a on the −Y direction side of the peripheral wall 23 (hereinafter referred to as "roller separation interval"). In addition, symbol L2 is the length of the Y direction of the board|substrate 10 (henceforth referred to as "substrate length"). In addition, symbol L3 is the length of the Y direction of the heating plate 5 (henceforth referred to as "heating plate length"). In addition, the heating plate length L3 is substantially the same length as the length of the Y direction of the infrared reflection part 30.

如圖5所示般，滾輪分離間隔L1小於基板長度L2且大於加熱板長度L3(L3＜L1＜L2)。藉由滾離分離間隔L1大於加熱板長度L3，移動部7a可以與加熱板5及紅外線反射部30同時通過通過部8h。As shown in FIG. 5 , the separation distance L1 between the rollers is smaller than the length L2 of the substrate and larger than the length L3 of the heating plate (L3<L1<L2). Since the roll-off separation distance L1 is greater than the length L3 of the heating plate, the moving part 7 a can pass through the passing part 8 h simultaneously with the heating plate 5 and the infrared reflection part 30 .

＜溫度檢測部＞ 　　如圖1所示般，溫度檢測部9被配置在腔室2外。溫度檢測部9能夠檢測基板10之溫度。具體而言，溫度檢測部9被設置在頂板21之上部。在頂板21安裝有無圖示之窗部。溫度檢測部9通過頂板21之窗部檢測基板10之溫度。例如，溫度檢測部9係放射溫度計等之非接觸溫度感測器。另外，在圖1中雖然僅圖示一個溫度檢測部9，但是溫度檢測部9之數量不限定於一個，即使為複數亦可。例如，在頂板21之中央部及四角落配置複數溫度檢測部9亦可。<Temperature Detection Unit> As shown in FIG. 1 , the temperature detection unit 9 is arranged outside the chamber 2 . The temperature detection unit 9 can detect the temperature of the substrate 10 . Specifically, the temperature detection unit 9 is provided on the top plate 21 . A window portion (not shown) is attached to the top plate 21 . The temperature detection unit 9 detects the temperature of the substrate 10 through the window portion of the top plate 21 . For example, the temperature detection unit 9 is a non-contact temperature sensor such as a radiation thermometer. In addition, although only one temperature detection part 9 is shown in FIG. 1, the number of temperature detection parts 9 is not limited to one, and may be plural. For example, a plurality of temperature detection units 9 may be arranged at the central portion and four corners of the top plate 21 .

＜壓力檢測部＞ 　　壓力檢測部14能夠檢測收容空間2S之壓力(以下，稱為「腔室內壓力」)。例如，壓力檢測部14之本體部(感測器)被配置在腔室2內。例如，壓力檢測部14之顯示部(壓力顯示器)被配置在腔室2外。例如，壓力檢測部14係數位壓力感測器。另外，在圖1中雖然僅圖示一個壓力檢測部14，但是壓力檢測部14之數量不限定於一個，即使為複數亦可。<Pressure Detection Unit> The pressure detection unit 14 can detect the pressure of the storage space 2S (hereinafter referred to as “chamber internal pressure”). For example, the body part (sensor) of the pressure detection part 14 is arranged in the chamber 2 . For example, the display unit (pressure indicator) of the pressure detection unit 14 is arranged outside the chamber 2 . For example, the pressure detection unit 14 is a pressure sensor. In addition, although only one pressure detection part 14 is shown in FIG. 1, the number of pressure detection parts 14 is not limited to one, and may be plural.

＜氣體液化回收部＞ 　　氣體液化回收部11被連接於減壓部3(真空泵浦13)之管線。氣體液化回收部11係在減壓部3之管線中被配置在較真空泵浦13更下游側。氣體液化回收部11係使通過真空配管3a之氣體液化，同時能夠從回收從被塗佈於基板10之聚醯亞胺形成用液發揮的溶劑。<Gas liquefaction recovery part> The gas liquefaction recovery part 11 is connected to the pipeline of the decompression part 3 (vacuum pump 13). The gas liquefaction recovery unit 11 is arranged on the downstream side of the vacuum pump 13 in the pipeline of the decompression unit 3 . The gas liquefaction recovery unit 11 liquefies the gas passing through the vacuum pipe 3 a and can recover the solvent produced from the polyimide forming liquid coated on the substrate 10 .

假設，在氣體液化回收部11在減壓部3之管線被配置在較真空泵浦13更上游側之情況，有在上游側液化的液體在下一個減壓時被氣化之情形，有抽真空時間被延遲的可能性。對此，若藉由本實施型態時，藉由氣體液化回收部11在減壓部3之管線被配置在較真空泵浦13更下游側，不會有在下游側液化的液體於下一個減壓時被氣化之情形，可以迴避抽真空時間延遲之情形。Assuming that the gas liquefaction recovery part 11 is arranged on the upstream side of the vacuum pump 13 in the pipeline of the decompression part 3, the liquid liquefied on the upstream side may be vaporized during the next decompression, and there is a vacuum time possibility of being delayed. In this regard, if the gas liquefaction recovery part 11 is arranged on the downstream side of the vacuum pump 13 in the pipeline of the decompression part 3 by this embodiment, there will be no liquid liquefied on the downstream side that will be decompressed in the next step. In the case of being gasified, it can avoid the delay of vacuuming time.

＜搖動部＞ 　　另外，基板加熱裝置1即使進一步具備能夠搖動基板10之搖動部(無圖示)亦可。例如，搖動部係在基板10被加熱之狀態下，使基板10在沿著XY平面之方向或沿著Z方向之方向搖動。依此，因可以邊使基板10搖動邊進行加熱，故可以提高基板10之溫度均勻性。 　　例如，即使搖動部設置在位置調整部7亦可。另外，不限定搖動部之配置位置。<Swing Unit> In addition, the substrate heating apparatus 1 may further include a swing unit (not shown) capable of swinging the substrate 10 . For example, the shaking unit shakes the substrate 10 in a direction along the XY plane or in a direction along the Z direction in a state where the substrate 10 is heated. According to this, since the substrate 10 can be heated while being shaken, the temperature uniformity of the substrate 10 can be improved. For example, even if the swinging part is provided in the position adjusting part 7, it is also acceptable. In addition, the arrangement position of the swing part is not limited.

＜紅外線反射部＞ 　　紅外線反射部30具備有反射從紅外線加熱器6朝向加熱板5之紅外線的加熱板側反射面30a。加熱板側反射面30a被配置在加熱板5和紅外線加熱器6之間。<Infrared Reflecting Section> The infrared reflecting section 30 includes a heating plate side reflecting surface 30 a that reflects infrared rays directed toward the heating plate 5 from the infrared heater 6 . The heater plate side reflection surface 30 a is arranged between the heater plate 5 and the infrared heater 6 .

加熱板側反射面30a被施予鏡面加工。具體而言，加熱板側反射面30a之表面粗度(Ra)被設成0.01μm左右、Rmax0.1μm左右。另外，加熱板側反射面30a之表面粗度(Ra)係以東京精密公司製造之測量機器(SURFCOM 1500SD2)進行測量。The reflective surface 30a on the heating plate side is given a mirror finish. Specifically, the surface roughness (Ra) of the reflection surface 30 a on the heater plate side is set to about 0.01 μm, and Rmax is set to about 0.1 μm. In addition, the surface roughness (Ra) of the reflective surface 30a on the heating plate side was measured with the measuring machine (SURFCOM 1500SD2) manufactured by Tokyo Precision Co., Ltd.

圖6為紅外線反射部30之上視圖。 　　如圖6所示般，在加熱板側反射面30a，設置有能夠支持基板10之複數(例如，在本實施型態中為80個)之基板支持凸部35(在圖1中省略圖示)。另外，基板支持凸部35之數量不限定於80個，可以適當變更。FIG. 6 is a top view of the infrared reflector 30 . As shown in FIG. 6, on the heating plate side reflective surface 30a, a plurality of (for example, 80 in this embodiment) substrate supporting protrusions 35 (not shown in FIG. 1) capable of supporting the substrate 10 are provided. ). In addition, the number of board|substrate support convex parts 35 is not limited to 80, and can be changed suitably.

基板支持凸部35為圓柱狀之插銷。另外，基板支持凸部35不限定於圓柱狀。例如，基板支持凸部35即使為陶瓷球等之球狀體亦可。再者，基板支持凸部35即使為角柱狀亦可，可以適當變更。The substrate support protrusion 35 is a cylindrical pin. In addition, the board|substrate support convex part 35 is not limited to columnar shape. For example, the substrate support protrusion 35 may be a spherical body such as a ceramic ball. In addition, the board|substrate supporting convex part 35 may be a prism shape, and it can change suitably.

複數基板支持凸部35係在加熱板側反射面30a之面內，於X方向及Y方向隔著一定間隔配置。例如，基板支持凸部35之配置間隔被設成50mm左右。例如，基板支持凸部35之高度被設成0.1mm左右。例如，基板支持凸部35之高度能夠在0.05mm～3mm之範圍調整。另外，基板支持凸部35之配置間隔、基板支持凸部35之高度不限定於上述尺寸，可以在加熱板側反射面30a和基板10之間形成間隙的狀態下能夠支持基板10的範圍做適當變更。The plurality of substrate supporting protrusions 35 are arranged at regular intervals in the X direction and the Y direction within the surface of the heater plate side reflection surface 30a. For example, the arrangement interval of the substrate supporting protrusions 35 is set to about 50 mm. For example, the height of the substrate supporting convex portion 35 is set to about 0.1 mm. For example, the height of the board|substrate support convex part 35 can be adjusted in the range of 0.05 mm - 3 mm. In addition, the arrangement interval of the substrate supporting protrusions 35 and the height of the substrate supporting protrusions 35 are not limited to the above-mentioned dimensions, and the range that can support the substrate 10 in a state where a gap is formed between the heating plate side reflective surface 30a and the substrate 10 can be adjusted appropriately. change.

紅外線反射部30具備在複數(例如，在本實施型態中為4個)之載置區域A1、A2、A3、A4(參照圖3)之每一個中被分割的複數(例如，在本實施型態中為4個)之紅外線反射板31、32、33、34。另外，紅外線反射板31、32、33、34之數量不限定於4個，可以做適當變更。例如，紅外線反射板即使僅有1片亦可。The infrared reflection unit 30 has a plurality (for example, four in this embodiment) divided into each of a plurality (for example, four in this embodiment) of placement areas A1, A2, A3, A4 (see FIG. 3 ). There are 4) infrared reflectors 31, 32, 33, 34 in the form. In addition, the number of infrared reflection plates 31, 32, 33, and 34 is not limited to four, and can be appropriately changed. For example, only one infrared ray reflecting plate may be used.

複數紅外線反射板31、32、33、34被設成實質上彼此相同的大小。依此，可以共用在各載置區域A1、A2、A3、A4(參照圖3)中載置的紅外線反射板31、32、33、34。另外，紅外線反射板31、32、33、34之大小即使彼此不同亦可，可以做適當變更。The plurality of infrared reflection plates 31, 32, 33, and 34 are set to have substantially the same size as each other. Accordingly, the infrared reflection plates 31 , 32 , 33 , and 34 mounted on the respective mounting areas A1 , A2 , A3 , and A4 (see FIG. 3 ) can be shared. In addition, the sizes of the infrared reflection plates 31, 32, 33, and 34 may be different from each other, and may be appropriately changed.

紅外線反射板31、32、33、34構成在X方向具有長邊之長方形板狀。在一個紅外線反射板31、32、33、34配置有5行4列(即是，在X方向5個並且在Y方向4個)之合計20個基板支持凸部35。The infrared reflection plates 31, 32, 33, and 34 are formed in a rectangular plate shape having long sides in the X direction. A total of 20 substrate supporting protrusions 35 are arranged in 5 rows and 4 columns (that is, 5 in the X direction and 4 in the Y direction) on one infrared reflection plate 31 , 32 , 33 , and 34 .

相鄰之兩個紅外線反射板31、32、33、34隔著間隔S1、S2被配置。間隔S1被設成能夠允許相鄰之兩個紅外線反射板31、32、33、34之熱膨脹的大小。具體而言，在X方向相鄰的兩個紅外線反射板31、32、33、34之間隔S1，被設成能夠吸收朝向X方向之紅外線反射板31、32、33、34之膨脹的大小。在Y方向相鄰的兩個紅外線反射板31、32、33、34之間隔S2，被設成能夠吸收朝向Y方向之紅外線反射板31、32、33、34之膨脹的大小。Two adjacent infrared reflection plates 31, 32, 33, 34 are arranged with intervals S1, S2 therebetween. The space S1 is set to a size that can allow thermal expansion of two adjacent infrared reflection plates 31 , 32 , 33 , and 34 . Specifically, the interval S1 between two infrared reflection plates 31 , 32 , 33 , 34 adjacent in the X direction is set to a size capable of absorbing expansion of the infrared reflection plates 31 , 32 , 33 , 34 facing the X direction. The interval S2 between two infrared reflection plates 31 , 32 , 33 , 34 adjacent in the Y direction is set to a size capable of absorbing expansion of the infrared reflection plates 31 , 32 , 33 , 34 facing the Y direction.

另外，紅外線反射板31、32、33、34之配置構造不限定於上述。例如，即使從側面以彈推構件推壓紅外線反射板31、32、33、34而予以固定亦可。例如，作為彈推構件，可以使用能夠吸收紅外線反射板31、32、33、34之膨脹的伸縮彈簧。 　　再者，將紅外線反射部30設成G6尺寸(縱150cm×橫185cm)以上之一片板構件之情況，即使從側面以彈簧等之彈推構件推壓上述板構件而予以固定亦可。然而，當上述板構件為G6尺寸以上時，即使上述板構件一片亦具有相當大的重量。但是，藉由從側面以彈簧等之彈推構件推壓上述板構件而予以固定，可以容易固定上述板構件。In addition, the arrangement structure of the infrared reflection plates 31, 32, 33, 34 is not limited to the above. For example, the infrared reflective plates 31, 32, 33, 34 may be pressed and fixed from the side by an urging member. For example, a telescopic spring capable of absorbing the expansion of the infrared reflection plates 31, 32, 33, 34 can be used as the urging member. Furthermore, when the infrared reflection part 30 is set as a plate member of G6 size (150 cm in length x 185 cm in width), it is also possible to press and fix the above-mentioned plate member from the side with springs or other springs. However, when the said plate member is G6 size or more, even if the said plate member is one piece, it will have considerable weight. However, the above-mentioned plate member can be easily fixed by pressing and fixing the above-mentioned plate member from the side with an urging member such as a spring.

＜加熱板和紅外線反射部之裝卸構造＞ 　　圖7為表示加熱板5和紅外線反射部30之裝卸構造40的斜視圖。圖8為在圖3中拆下紅外線反射部30之狀態的側視圖。另外，在圖7中，在第一載置區域A1及第二載置區域A2分別配置第一紅外線反射板31及第二紅外線反射板32，表示欲在第三載置區域A3載置第三紅外線反射板33之狀態。<Detachable Structure of Heating Plate and Infrared Reflecting Part> FIG. 7 is a perspective view showing a detachable structure 40 of the heating plate 5 and the infrared reflecting part 30 . FIG. 8 is a side view of a state in which the infrared reflector 30 is removed in FIG. 3 . In addition, in FIG. 7, the first infrared ray reflecting plate 31 and the second infrared ray reflecting plate 32 are arranged respectively in the first loading area A1 and the second loading area A2, indicating that the third infrared ray reflecting plate 32 is to be placed in the third loading area A3. The state of the infrared reflector 33.

如圖7所示般，在加熱板5和紅外線反射部30(參照圖6)之間，設置有設成能夠將紅外線反射部30對加熱板5進行裝卸的裝卸構造40。 　　裝卸構造40具備有從載置面5a突出之突出部41，和被形成在紅外線反射部30並且被***突出部41之***部42。As shown in FIG. 7 , between the heater plate 5 and the infrared reflector 30 (see FIG. 6 ), there is provided a detachable structure 40 that enables the infrared reflector 30 to be attached to and detached from the heater plate 5 . The detachable structure 40 is provided with a protruding portion 41 protruding from the mounting surface 5 a, and an insertion portion 42 formed on the infrared reflection portion 30 and inserted into the protruding portion 41 .

突出部41被配置在載置區域A1、A2、A3、A4之Y方向中央。突出部41具備有第一凸部41a、在載置面5a之面內在X方向與第一凸部41a分離的第二凸部41b。The protrusion part 41 is arrange|positioned in the Y direction center of mounting area|region A1, A2, A3, A4. The protrusion part 41 is provided with the 1st convex part 41a, and the 2nd convex part 41b separated from the 1st convex part 41a in the X direction in the surface of the mounting surface 5a.

在一個載置區域A1、A2、A3、A4配置第一凸部41a及第二凸部41b各一個。第一凸部41a被配置在載置區域A1、A2、A3、A4之-X方向側。第二凸部41b被配置在載置區域A1、A2、A3、A4之+X方向側。如圖8所示般，第一凸部41a及第二凸部41b成為實質上相同的高度。One each of the first convex portion 41 a and the second convex portion 41 b is disposed in one mounting area A1 , A2 , A3 , and A4 . The 1st convex part 41a is arrange|positioned at the -X direction side of mounting area|region A1, A2, A3, A4. The 2nd convex part 41b is arrange|positioned at the +X direction side of mounting area|region A1, A2, A3, A4. As shown in FIG. 8, the 1st convex part 41a and the 2nd convex part 41b become substantially the same height.

第一凸部41a及第二凸部41b為圓柱狀之插銷。另外，第一凸部41a及第二凸部41b不限定於圓柱狀。例如，第一凸部41a及第二凸部41b即使為角柱狀亦可，可適當變更。The first protruding portion 41a and the second protruding portion 41b are cylindrical pins. In addition, the 1st convex part 41a and the 2nd convex part 41b are not limited to columnar shape. For example, the 1st convex part 41a and the 2nd convex part 41b may be a prism shape, and can be changed suitably.

如圖7所示般，***部42被配置在紅外線反射板31、32、33、34之短邊方向中央(即是，將紅外線反射板31、32、33、34朝載置面5a載置之時的Y方向中央)。***部42具備***第一凸部41a的第一凹部42a，和以至少允許紅外線反射部30朝第一凸部41a和第二凸部41b之分離方向(X方向)膨脹或收縮之方式，***第二凸部41b的第二凹部42b。As shown in FIG. 7, the insertion part 42 is arranged in the center of the short side direction of the infrared reflective plates 31, 32, 33, 34 (that is, the infrared reflective plates 31, 32, 33, 34 are placed toward the mounting surface 5a. The center of the Y direction at the time). The insertion portion 42 has a first concave portion 42a into which the first convex portion 41a is inserted, and is inserted in such a manner that at least the infrared reflection portion 30 is allowed to expand or contract in the direction of separation (X direction) between the first convex portion 41a and the second convex portion 41b. The second concave portion 42b of the second convex portion 41b.

在一個紅外線反射板31、32、33、34配置第一凹部42a及第二凹部42b各一個。第一凹部42a被配置在紅外線反射板31、32、33、34之長邊方向一方側(即是，將紅外線反射板朝載置面5a載置之時的-X方向側)。第二凹部42b被配置在紅外線反射板31、32、33、34之長邊方向另一方側(即是，將紅外線反射板31、32、33、34朝載置面5a載置之時的+X方向側)。Each of the first recessed portion 42 a and the second recessed portion 42 b is disposed on one infrared ray reflecting plate 31 , 32 , 33 , and 34 . The first concave portion 42a is arranged on one side in the longitudinal direction of the infrared reflecting plates 31, 32, 33, 34 (that is, on the -X direction side when the infrared reflecting plates are placed on the mounting surface 5a). The second concave portion 42b is arranged on the other side in the longitudinal direction of the infrared reflecting plates 31, 32, 33, 34 (that is, + X direction side).

第一凹部42a係在紅外線反射板31、32、33、34之厚度方向凹陷，以使上述插銷能夠裝卸地被***的凹部。第一凹部42a具有與第一凸部41a之外形實質相同的內形。第一凹部42a係俯視圓形狀。另外，第一凹部42a不限定於俯視圓形狀。例如，第一凹部42a即使為俯視矩形狀亦可，可以配合上述插銷之形狀而適當變更。The first recess 42a is recessed in the thickness direction of the infrared reflection plates 31, 32, 33, 34 so that the above-mentioned plug is detachably inserted. The first concave portion 42a has substantially the same inner shape as the outer shape of the first convex portion 41a. The first concave portion 42a is circular in plan view. In addition, the 1st recessed part 42a is not limited to a planar view circular shape. For example, the first concave portion 42a may be rectangular in plan view, and may be appropriately changed in accordance with the shape of the above-mentioned plug.

第二凹部42b係在紅外線反射板31、32、33、34之厚度方向凹陷，以使上述插銷能夠裝卸地被***的凹部。第二凹部42b具有大於第二凸部41b之X方向上的外形的內形，並且具有與第二凸部41b之Y方向上之外形實質上相同的內形。第二凹部42b構成在俯視下於X方向具有長邊的長圓形狀。另外，第二凹部42b不限定於在俯視下於X方向具有長邊的形狀。例如，第二凹部42b即使為在俯視於X方向具有長邊之長方形形狀亦可，可以配合上述插銷之形狀而做適當變更。The second recess 42b is recessed in the thickness direction of the infrared reflection plates 31, 32, 33, 34 so that the above-mentioned plug is detachably inserted. The second concave portion 42b has an inner shape larger than the outer shape of the second convex portion 41b in the X direction, and has an inner shape substantially the same as the outer shape of the second convex portion 41b in the Y direction. The second concave portion 42b has an oval shape having long sides in the X direction in plan view. In addition, the 2nd recessed part 42b is not limited to the shape which has a long side in the X direction in planar view. For example, the second concave portion 42b may have a rectangular shape having a long side in the X direction in a plan view, and may be appropriately changed in accordance with the shape of the above-mentioned plug.

另外，裝卸構造40不限定於具備有從載置面5a突出之突出部41，和被形成在紅外線反射部30並且被***突出部41之***部42。例如，即使裝卸構造具備從紅外線反射部30之下面突出之凸部，和被形成在載置面5a並且被***上述凸部的凹部亦可。In addition, the detachable structure 40 is not limited to including the protrusion part 41 protruding from the mounting surface 5a, and the insertion part 42 formed in the infrared reflection part 30 and inserted into the protrusion part 41. For example, the attachment and detachment structure may include a convex portion protruding from the lower surface of the infrared reflection portion 30 and a concave portion formed on the mounting surface 5a and inserted into the convex portion.

＜冷卻機構＞ 　　如圖3所示般，基板加熱裝置1進一步具備能夠冷卻加熱板5的冷卻機構50。 　　圖9為表示冷卻機構50的上視圖。並且，在圖9中，為了方便，省略突出部41等之圖示。 　　如圖9所示般，冷卻機構50具備有被配置在加熱板5之內部，同時能夠使冷媒通過的冷媒通過部51。例如，冷媒為空氣。另外，冷媒不限定於空氣等之氣體。例如，冷媒即使為水等之液體亦可。<Cooling Mechanism> As shown in FIG. 3 , the substrate heating apparatus 1 further includes a cooling mechanism 50 capable of cooling the heating plate 5 . FIG. 9 is a top view showing the cooling mechanism 50. In addition, in FIG. 9 , illustration of the protruding portion 41 and the like is omitted for convenience. As shown in FIG. 9 , the cooling mechanism 50 is provided with a refrigerant passing portion 51 which is arranged inside the heating plate 5 and allows the refrigerant to pass through. For example, the refrigerant is air. In addition, the refrigerant is not limited to gases such as air. For example, the refrigerant may be liquid such as water.

冷媒通過部51具備冷卻通路51a、51b，其係在與載置面5a平行之一方向延伸，同時在與載置面5a平行並且與上述一方向交叉之方向排列的複數(例如，在本實施型態中為7條)之冷卻通路51a、51b。即是，冷媒通過部51具備有X方向延伸，同時在Y方向排列的複數冷卻通路51a、51b。The refrigerant passing portion 51 is provided with cooling passages 51a, 51b, which extend in one direction parallel to the mounting surface 5a and are arranged in a plurality of directions parallel to the mounting surface 5a and intersecting the above-mentioned one direction (for example, in this embodiment There are 7 cooling passages 51a, 51b in the form. That is, the refrigerant passing portion 51 is provided with a plurality of cooling passages 51a, 51b extending in the X direction and arranged in the Y direction.

複數冷卻通路51a、51b係使冷媒從加熱板5之一端側通過至另一端側的複數(例如，在本實施型態中為4條)之第一冷卻通路51a，和使冷媒從加熱板5之另一端側通過至一端側的複數(例如，在本實施型態中為3條)之第二冷卻通路51b。即是，通過第一冷卻通路51a之冷媒從加熱板5之-X方向側朝向+X方向側流動。通過第二冷卻通路51b之冷媒從加熱板5之+X方向側朝向-X方向側流動。The plurality of cooling passages 51a, 51b are plural (for example, four in this embodiment) first cooling passages 51a that allow the refrigerant to pass from one end side of the heating plate 5 to the other end side, and allow the refrigerant to flow from the heating plate 5 to the other end side. The other end side passes through a plurality of (for example, three in this embodiment) second cooling passages 51b to one end side. That is, the refrigerant passing through the first cooling passage 51a flows from the −X direction side of the heating plate 5 toward the +X direction side. The refrigerant passing through the second cooling passage 51 b flows from the +X direction side of the heating plate 5 toward the −X direction side.

在與載置面5a平行並且與上述第一方向交叉之方向上交替配置第一冷卻通路51a和第二冷卻通路51b各一個。即是，在Y方向交替配置第一冷卻通路51a和第二冷卻通路51b各一個。One each of the first cooling passages 51 a and the second cooling passages 51 b are alternately arranged in a direction parallel to the mounting surface 5 a and intersecting the above-mentioned first direction. That is, one each of the first cooling passages 51 a and the second cooling passages 51 b are arranged alternately in the Y direction.

冷媒通過部51進一步具備在加熱板5之一端側和另一端側被連結於複數冷卻通路51a、51b之冷卻歧管52、53。冷卻歧管52、53具備有在加熱板5之-X方向側被連結於複數冷卻通路51a、51b之第一歧管52，和在加熱板5之+X方向側被連結於複數冷卻通路51a、51b之第二歧管53。The refrigerant passage portion 51 further includes cooling manifolds 52 and 53 connected to a plurality of cooling passages 51 a and 51 b on one end side and the other end side of the heating plate 5 . The cooling manifolds 52 and 53 are provided with the first manifold 52 connected to the plurality of cooling passages 51 a and 51 b on the −X direction side of the heating plate 5 , and the first manifold 52 connected to the plurality of cooling passages 51 a on the +X direction side of the heating plate 5 . , The second manifold 53 of 51b.

第一歧管52具備有以連結複數第一冷卻通路51a之上游端(-X方向端)之方式在Y方向延伸之第一上游連結路52a，和以連結複數第二冷卻通路51b之下游端(-X方向端)之方式在Y方向延伸的第二下游連結路52b。在第一歧管52設置有被連結於第一上游連結路52a之第一上游配管54a，和被連結於第二下游連結路52b之第二下游配管54b的第一配管部54。The first manifold 52 has a first upstream connecting passage 52a extending in the Y direction to connect the upstream ends (-X direction ends) of the plurality of first cooling passages 51a, and a downstream end to connect the plurality of second cooling passages 51b. (-X direction end) is the second downstream connection path 52b extending in the Y direction. The first manifold 52 is provided with a first piping section 54 including a first upstream pipe 54a connected to the first upstream connection path 52a and a second downstream pipe 54b connected to the second downstream connection path 52b.

第二歧管53具備有以連結複數第一冷卻通路51a之下游端之方式在Y方向延伸之第一下游連結路53a，和以連結複數第二冷卻通路51b之上游端之方式在Y方向延伸的第二上游連結路53b。在第二歧管53設置有被連結於第一下游連結路53a之第一下游配管55a，和被連結於第二上游連結路53b之第二上游配管55b的第二配管部55。The second manifold 53 has a first downstream connection passage 53a extending in the Y direction to connect the downstream ends of the plurality of first cooling passages 51a, and a first downstream connecting passage 53a extending in the Y direction to connect the upstream ends of the plurality of second cooling passages 51b. The second upstream connecting road 53b. The 2nd manifold 53 is provided with the 2nd piping part 55 connected to the 1st downstream pipe 55a connected to the 1st downstream connection path 53a, and the 2nd upstream pipe 55b connected to the 2nd upstream connection path 53b.

例如，成為藉由無圖示之送風機，空氣被導入至第一上游配管54a之內部空間。依此，來自送風機之空氣經由第一上游配管54a、第一上游連結路52a而分別朝向+X方向側在複數第一冷卻通路51a流動之後，經由第一下游連結路53a、第一下游配管55a而被排出至外部。 　　另外，成為藉由無圖示之送風機，空氣被導入至第二上游配管55b之內部空間。依此，來自送風機之空氣經由第二上游配管55b、第二上游連結路53b而分別朝向-X方向側在複數第二冷卻通路51b流動之後，經由第二下游連結路52b、第二下游配管54b而被排出至外部。 　　另外，空氣之導入不限定於送風機，即使以乾燥氣體所致的壓縮空氣來執行亦可。在圖3及圖8中，省略第二下游連結路52b及第二上游連結路53b等之圖示。For example, air is introduced into the inner space of the first upstream piping 54a by a blower not shown. Accordingly, the air from the blower passes through the first upstream piping 54a and the first upstream connecting passage 52a to flow in the plurality of first cooling passages 51a toward the +X direction side, respectively, and then passes through the first downstream connecting passage 53a and the first downstream piping 55a. and is discharged to the outside. In addition, air is introduced into the inner space of the second upstream pipe 55b by a blower not shown. Accordingly, the air from the blower passes through the second upstream piping 55b and the second upstream connecting passage 53b, and then flows through the plurality of second cooling passages 51b toward the −X direction side, and then passes through the second downstream connecting passage 52b and the second downstream piping 54b. and is discharged to the outside. In addition, the introduction of air is not limited to the blower, and it can also be performed with compressed air caused by dry gas. In FIGS. 3 and 8 , illustration of the second downstream connection path 52b, the second upstream connection path 53b, and the like is omitted.

＜輔助加熱部＞ 　　基板加熱裝置1進一步具備能夠選擇性加熱冷卻歧管52、53之輔助加熱部。 　　圖10為用以說明在加熱板5之加熱控制之一例的圖示。 　　如圖10所示般，在加熱板5配置有複數(例如，在本實施型態中為3個)之加熱區域H1、H2、H3。具體而言，在加熱板5之X方向中央部配置有在俯視構成正方形狀之第一加熱區域H1。在加熱板5之-X方向側且靠近第一歧管52，配置有構成俯視下於Y方向具有長邊之長方形形狀的第二加熱區域H2。在加熱板5之+X方向側且靠近第二歧管53，配置有具有與第二加熱區域H2實質上相同形狀的第三加熱區域H3。另外，加熱區域H1、H2、H3之數量不限定於3個，可以做適當變更。<Auxiliary Heating Unit> The substrate heating apparatus 1 further includes an auxiliary heating unit capable of selectively heating the cooling manifolds 52 and 53 . FIG. 10 is a diagram for explaining an example of heating control on the heating plate 5. As shown in FIG. 10, a plurality of (for example, three in this embodiment) heating regions H1, H2, and H3 are arranged on the heating plate 5. Specifically, the first heating region H1 having a square shape in plan view is arranged at the X-direction central portion of the heating plate 5 . On the −X direction side of the heating plate 5 and close to the first manifold 52 , the second heating region H2 constituting a rectangular shape having a long side in the Y direction in plan view is arranged. The 3rd heating area|region H3 which has substantially the same shape as the 2nd heating area|region H2 is arrange|positioned at the +X direction side of the heating plate 5, and close to the 2nd manifold 53. In addition, the number of heating regions H1, H2, and H3 is not limited to three, and can be appropriately changed.

加熱板5成為能夠選擇性地加熱第一加熱區域H1、第二加熱區域H2及第三加熱區域H3之至少一個。控制部15(參照圖1)控制加熱板5而選擇性地加熱第一加熱區域H1、第二加熱區域H2及第三加熱區域H3之至少一個。例如，冷卻歧管52、53附近可能降溫之情況，控制部15控制加熱板5，選擇性地加熱第一歧管52及第二歧管53之至少一個的附近(即是，在加熱板5之第二加熱區域H2及第三加熱區域H3之至少一個)。在加熱板5之第二加熱區域H2及第三加熱區域H3作為輔助加熱部而發揮功能。The heating plate 5 can selectively heat at least one of the 1st heating area H1, the 2nd heating area H2, and the 3rd heating area H3. The controller 15 (see FIG. 1 ) controls the heating plate 5 to selectively heat at least one of the first heating region H1, the second heating region H2, and the third heating region H3. For example, when the cooling manifolds 52 and 53 may drop in temperature, the controller 15 controls the heating plate 5 to selectively heat the vicinity of at least one of the first manifold 52 and the second manifold 53 (that is, in the vicinity of the heating plate 5). At least one of the second heating zone H2 and the third heating zone H3). The second heating region H2 and the third heating region H3 of the heating plate 5 function as auxiliary heating parts.

另外，作為輔助加熱部而發揮功能之區域不限定於第二加熱區域H2及第三加熱區域H3。例如，輔助加熱部即使與加熱板5不同的加熱器亦可。再者，即使輔助加熱部係上述區域和上述加熱器之組合亦可，可以適當變更。In addition, the area functioning as an auxiliary heating part is not limited to the 2nd heating area H2 and the 3rd heating area H3. For example, the auxiliary heating unit may be a heater different from the heating plate 5 . In addition, the auxiliary heating part may be a combination of the above-mentioned regions and the above-mentioned heaters, and may be appropriately changed.

＜加熱單元＞ 　　如圖2所示般，加熱單元80具備腔室加熱部81、真空配管加熱部82、氣體供給配管加熱部83及基板搬出搬入部加熱部84。例如，作為加熱單元80包含具有可撓性之面狀發熱體以作為各構成要素之加熱構件。例如，面狀發熱體係橡膠加熱器。另外，加熱構件不限定於橡膠加熱器，即使為加熱板亦可，即使為橡膠加熱器和加熱板之組合亦可，可以適當變更。<Heating Unit> As shown in FIG. 2 , the heating unit 80 includes a chamber heating unit 81 , a vacuum piping heating unit 82 , a gas supply piping heating unit 83 , and a substrate loading/unloading unit heating unit 84 . For example, the heating unit 80 includes a flexible planar heating element as a heating member for each component. For example, planar heating system rubber heater. In addition, the heating means is not limited to a rubber heater, and may be a heating plate, or may be a combination of a rubber heater and a heating plate, and may be appropriately changed.

加熱單元80能夠選擇性地加熱腔室加熱部81、真空配管加熱部82、氣體供給配管加熱部83及基板搬出搬入部加熱部84之至少一個。控制部15(參照圖1)控制加熱單元80而選擇性地加熱腔室加熱部81、真空配管加熱部82、氣體供給配管加熱部83及基板搬出搬入部加熱部84之至少一個。例如，在真空配管3a之內面可能降溫之情況，控制部15控制加熱單元80而選擇性地加熱真空配管加熱部82。The heating unit 80 can selectively heat at least one of the chamber heating unit 81 , the vacuum piping heating unit 82 , the gas supply piping heating unit 83 , and the substrate loading/unloading unit heating unit 84 . The control unit 15 (see FIG. 1 ) controls the heating unit 80 to selectively heat at least one of the chamber heating unit 81 , the vacuum piping heating unit 82 , the gas supply piping heating unit 83 , and the substrate loading/unloading unit heating unit 84 . For example, when the temperature of the inner surface of the vacuum pipe 3 a may drop, the control unit 15 controls the heating unit 80 to selectively heat the vacuum pipe heating unit 82 .

＜腔室加熱部＞ 　　腔室加熱部81能夠加熱腔室2之內面之至少一部分。在實施型態中，腔室加熱部81僅被配置在腔室2之周壁23。腔室加熱部81係沿著腔室2之周壁23之外面的面狀發熱體。在實施型態中，腔室加熱部81覆蓋腔室2之周壁23之外面全體。例如，在使腔室加熱部81覆蓋腔室2之周壁23之外面全體之狀態下，加熱腔室2之周壁23，依此可以提高腔室2之周壁23之內面之溫度的面內均勻性。<Chamber Heating Unit> The chamber heating unit 81 can heat at least a part of the inner surface of the chamber 2 . In the embodiment, the chamber heating part 81 is arranged only on the peripheral wall 23 of the chamber 2 . The chamber heating part 81 is a planar heating element along the outer surface of the peripheral wall 23 of the chamber 2 . In an embodiment, the chamber heating part 81 covers the entire outer surface of the peripheral wall 23 of the chamber 2 . For example, by heating the peripheral wall 23 of the chamber 2 in a state where the chamber heating unit 81 covers the entire outer surface of the peripheral wall 23 of the chamber 2, the in-plane uniformity of the temperature of the inner surface of the peripheral wall 23 of the chamber 2 can be improved accordingly. sex.

例如，腔室加熱部81進行加熱，以使腔室2之周壁23之內面之溫度成為40℃以上並且150℃以下之範圍。在基板10塗佈聚醯亞胺形成用液之情況，從抑制在腔室2之周壁23之內面附著昇華物之觀點來看，將腔室2之周壁23之內面之溫度設定成75℃以上並且105℃以下之範圍為佳，以設定在90℃為特佳。另外，腔室2之周壁23之內面之溫度不限定於上述範圍，若在能夠抑制腔室2之收容空間2S中之氣體在腔室2之周壁23之內面被冷卻而成為昇華物之情形的範圍下設定即可。For example, the chamber heating unit 81 heats so that the temperature of the inner surface of the peripheral wall 23 of the chamber 2 falls within the range of 40°C to 150°C. In the case of coating the polyimide forming liquid on the substrate 10, the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is set to 75° C. The range between 105°C and 105°C is preferable, and it is particularly preferable to set it at 90°C. In addition, the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is not limited to the above-mentioned range, if the gas in the storage space 2S of the chamber 2 can be prevented from being cooled on the inner surface of the peripheral wall 23 of the chamber 2 to become a sublimation product You can set it under the scope of the situation.

＜真空配管加熱部＞ 　　真空配管加熱部82能夠加熱真空配管3a之內面之至少一部分。在實施型態中，真空配管加熱部82係沿著真空配管3a之外面的面狀發熱體。在實施型態中，真空配管加熱部82覆蓋真空配管3a之外面全體。例如，在使真空配管加熱部82覆蓋在真空配管3a之外面全體之狀態下加熱真空配管3a，依此可以提高真空配管3a之內面之溫度之面內均勻性。<Vacuum piping heating part> The vacuum piping heating part 82 can heat at least a part of the inner surface of the vacuum piping 3a. In the embodiment, the vacuum pipe heating part 82 is a planar heating element along the outer surface of the vacuum pipe 3a. In the embodiment, the vacuum pipe heating unit 82 covers the entire outer surface of the vacuum pipe 3a. For example, by heating the vacuum pipe 3a with the vacuum pipe heating unit 82 covering the entire outer surface of the vacuum pipe 3a, the in-plane uniformity of the temperature on the inner surface of the vacuum pipe 3a can be improved.

＜氣體供給配管加熱部＞ 　　氣體供給配管加熱部83能夠加熱氣體供給配管4a之內面之至少一部分。在實施型態中，氣體供給配管加熱部83係沿著氣體供給配管4a之外面的面狀發熱體。在實施型態中，氣體供給配管加熱部83覆蓋氣體供給配管4a之外面全體。例如，在使氣體供給配管加熱部83覆蓋在氣體供給配管4a之外面全體之狀態下加熱氣體供給配管4a，依此可以提高氣體供給配管4a之內面之溫度之面內均勻性。<Gas Supply Pipe Heating Unit> The gas supply pipe heating unit 83 can heat at least a part of the inner surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating unit 83 is a planar heating element along the outer surface of the gas supply pipe 4a. In the embodiment, the gas supply pipe heating unit 83 covers the entire outer surface of the gas supply pipe 4a. For example, by heating the gas supply pipe 4a with the gas supply pipe heating unit 83 covering the entire outer surface of the gas supply pipe 4a, the in-plane uniformity of the temperature inside the gas supply pipe 4a can be improved.

＜基板搬出搬入部加熱部＞ 　　基板搬出搬入部加熱部84能夠加熱基板搬出搬入部24之至少一部分。在實施型態中，基板搬出搬入部加熱部84係沿著基板搬出搬入部24之外面的面狀發熱體。在實施型態中，基板搬出搬入部加熱部84覆蓋基板搬出搬入部24之外面全體。<Substrate Carry-In Section Heating Section> The substrate carry-out section heating section 84 can heat at least a part of the substrate carry-out section 24 . In the embodiment, the heating unit 84 of the substrate carrying-in section is a planar heating element along the outer surface of the carrying-in section 24 of the substrate. In the embodiment, the heating unit 84 of the substrate carrying-in section covers the entire surface of the carrying-out section 24 of the substrate.

＜隔熱構件＞ 　　隔熱構件26係從腔室2之外方覆蓋腔室加熱部81之至少一部分。在實施型態中，隔熱構件26具備腔室隔熱構件26a、真空配管隔熱構件26b、氣體供給配管隔熱構件26c及基板搬出搬入部隔熱構件26d。例如，隔熱構件26包含覆蓋各構成要素之加熱部的隔熱材。例如，隔熱材為發泡型隔熱材。另外，隔熱材不限定於發泡型隔熱材，即使為纖維型隔熱材亦可，即使為使空氣介於複數層板玻璃之間隙的構造亦可，可以適當變更。<Heat insulating member> The heat insulating member 26 covers at least a part of the chamber heating part 81 from the outside of the chamber 2 . In the embodiment, the heat insulating member 26 includes a chamber heat insulating member 26a, a vacuum pipe heat insulating member 26b, a gas supply pipe heat insulating member 26c, and a substrate carrying-in/out portion heat insulating member 26d. For example, the heat insulating member 26 contains the heat insulating material which covers the heating part of each component. For example, the heat insulating material is a foam type heat insulating material. In addition, the heat insulating material is not limited to a foam type heat insulating material, and may be a fiber type heat insulating material, or may have a structure in which air is interposed between a plurality of glass panes, and may be appropriately changed.

在實施型態中，腔室隔熱構件26a覆蓋腔室加熱部81之外面全體。真空配管隔熱構件26b覆蓋真空配管加熱部82之外面全體。氣體供給配管隔熱構件26c覆蓋氣體供給配管加熱部83之外面全體。基板搬出搬入部隔熱構件26d覆蓋基板搬出搬入部加熱部84之外面全體。In the embodiment, the chamber heat insulating member 26 a covers the entire outer surface of the chamber heating unit 81 . The vacuum pipe heat insulating member 26b covers the entire outer surface of the vacuum pipe heating unit 82 . The gas supply pipe heat insulating member 26c covers the entire outer surface of the gas supply pipe heating portion 83 . The substrate carrying-in section heat insulating member 26 d covers the entire outer surface of the heating section 84 of the substrate carrying-out section.

＜蓋構件＞ 　　蓋構件27係從腔室2之外方覆蓋隔熱構件26之至少一部分。在實施型態中，蓋構件27具備有腔室蓋構件27a、真空配管蓋構件27b、氣體供給配管蓋構件27c及基板搬出搬入部蓋構件27d。例如，蓋構件27包含覆蓋各構成要素之隔熱構件的保護材。例如，保護材為金屬製。另外，保護材不限定於金屬製，即使為樹脂製亦可，可以適當變更。<Cover Member> The cover member 27 covers at least a part of the heat insulating member 26 from the outside of the chamber 2 . In the embodiment, the cover member 27 includes a chamber cover member 27a, a vacuum piping cover member 27b, a gas supply piping cover member 27c, and a substrate loading/unloading section cover member 27d. For example, the cover member 27 contains the protective material which covers the heat insulation member of each component. For example, the protective material is made of metal. In addition, the protective material is not limited to being made of metal, and may be made of resin, and may be appropriately changed.

在實施型態中，腔室蓋構件27a覆蓋腔室隔熱構件26a之外面全體。真空配管蓋構件27b覆蓋真空配管隔熱構件26b之外面全體。氣體供給配管蓋構件27c覆蓋氣體供給配管隔熱構件26c之外面全體。基板搬出搬入部蓋構件27d覆蓋基板搬出搬入部隔熱構件26d之外面全體。In the embodiment, the chamber cover member 27a covers the entire outer surface of the chamber heat insulating member 26a. The vacuum piping cover member 27b covers the entire outer surface of the vacuum piping heat insulating member 26b. The gas supply pipe cover member 27c covers the entire outer surface of the gas supply pipe heat insulating member 26c. The board|substrate carrying-out part cover member 27d covers the whole outer surface of the board|substrate carrying-out part heat insulating member 26d.

＜基板加熱方法＞ 　　接著，說明與本實施型態有關之基板加熱方法。在本實施型態中，使用上述基板加熱裝置1而加熱基板10。在基板加熱裝置1之各部進行的動作藉由控制部15被控制。<Substrate Heating Method> Next, the substrate heating method related to this embodiment will be described. In this embodiment, the substrate 10 is heated using the substrate heating apparatus 1 described above. The operations performed by each part of the substrate heating apparatus 1 are controlled by the control part 15 .

圖11為用以說明與第一實施型態有關之基板加熱裝置1之動作之一例的圖示。圖12為接續於圖11的與第一實施型態有關之基板加熱裝置1之動作說明圖。圖13為接續於圖12的與第一實施型態有關之基板加熱裝置1之動作說明圖。FIG. 11 is a diagram for explaining an example of the operation of the substrate heating apparatus 1 related to the first embodiment. FIG. 12 is an explanatory diagram of the operation of the substrate heating apparatus 1 related to the first embodiment, continued from FIG. 11 . FIG. 13 is an explanatory diagram of the operation of the substrate heating apparatus 1 related to the first embodiment, continued from FIG. 12 .

為了便於說明，在圖11～圖13中，省略基板加熱裝置1之構成要素之中，基板搬出搬入部24、減壓部3、氣體供給部4、氣體擴散部60、溫度檢測部9、壓力檢測部14、氣體液化回收部11、冷卻機構50、加熱單元80、隔熱構件26、蓋構件27及控制部15之圖示。For convenience of description, in FIGS. 11 to 13 , among the constituent elements of the substrate heating apparatus 1, the substrate unloading and loading unit 24, the decompression unit 3, the gas supply unit 4, the gas diffusion unit 60, the temperature detection unit 9, the pressure The diagram of the detection unit 14 , the gas liquefaction recovery unit 11 , the cooling mechanism 50 , the heating unit 80 , the heat insulating member 26 , the cover member 27 and the control unit 15 .

與本實施型態有關之基板加熱方法包含收容工程、減壓工程、基板加熱工程、腔室加熱工程、壓力檢測工程及控制工程。 　　如圖11所示般，在收容工程中將塗佈有聚醯亞胺形成用液之基板10收容在腔室2之內部的收容空間2S。 　　在減壓工程中，減壓收容空間2S之氛圍。The substrate heating method related to this implementation type includes containment engineering, decompression engineering, substrate heating engineering, chamber heating engineering, pressure detection engineering and control engineering. As shown in Fig. 11, in the storage process, the substrate 10 coated with the polyimide forming liquid is stored in the storage space 2S inside the chamber 2. In the decompression project, the atmosphere of the decompression containment space 2S.

在減壓工程中，在搬運滾輪8a配置基板10。再者，在減壓工程中，加熱板5位於底板22附近。在減壓工程中，加熱板5及基板10分離成加熱板5之熱不會傳遞至基板10的程度。在減壓工程中，加熱板5之電源成為導通。例如，加熱板5之溫度成為200℃左右。另外，在減壓工程中，紅外線加熱器6之電源成為斷開。In the decompression process, the board|substrate 10 is arrange|positioned on the conveyance roller 8a. Furthermore, in the decompression process, the heating plate 5 is located near the bottom plate 22 . In the decompression process, the heating plate 5 and the substrate 10 are separated to such an extent that the heat of the heating plate 5 is not transferred to the substrate 10 . During the decompression process, the power supply of the heating plate 5 is turned on. For example, the temperature of the heating plate 5 becomes about 200 degreeC. In addition, during the decompression process, the power supply of the infrared heater 6 is turned off.

在減壓工程中，將基板10之收容空間2S之氛圍從大氣壓減壓至1Pa以上100Pa以下。在減壓工程中，使腔室內壓力下降至被塗佈在基板10之聚醯亞胺形成用液發揮為止。例如，在減壓工程中，將使腔室內壓力下降之時間設成0.5min以上3min以下。 　　另外，在減壓工程中，可以將收容空間2S之氛圍設成500Pa以下，亦可以設成300Pa以下，亦可以設成100Pa以下。In the decompression process, the atmosphere of the housing space 2S of the substrate 10 is decompressed from atmospheric pressure to 1 Pa or more and 100 Pa or less. In the decompression step, the pressure in the chamber is lowered until the polyimide-forming liquid coated on the substrate 10 is exerted. For example, in the decompression process, set the time for reducing the pressure in the chamber to 0.5 min to 3 min. In addition, in the decompression project, the atmosphere of the containment space 2S can be set below 500Pa, or below 300Pa, or below 100Pa.

在減壓工程中，使腔室2之內部氛圍之氧濃度盡可能地低。例如，在減壓工程中，將腔室2內之真空度設成20Pa以下。依此，可以將腔室2內之氧濃度設成100ppm以下。In the decompression process, the oxygen concentration in the atmosphere inside the chamber 2 is made as low as possible. For example, in the decompression process, the vacuum degree in the chamber 2 is set to 20 Pa or less. Accordingly, the oxygen concentration in the chamber 2 can be set to 100 ppm or less.

在減壓工程之後，基板加熱工程中，使用被配置在基板10之一方側的加熱板5和被配置在基板10之另一方側之紅外線加熱器6而加熱基板10。 　　基板加熱工程包含第一加熱工程及第二加熱工程。After the decompression process, in the substrate heating process, the substrate 10 is heated using the heating plate 5 disposed on one side of the substrate 10 and the infrared heater 6 disposed on the other side of the substrate 10 . The substrate heating process includes the first heating process and the second heating process.

在減壓工程之後，在第一加熱工程中，以第一溫度加熱基板10。 　　如圖12所示般，在第一加熱工程中，使加熱板5朝上方移動，而將基板10載置於紅外線反射部30之加熱板側反射面30a。第一加熱工程係使用加熱板5而加熱基板10的工程。以下，也將第一加熱工程稱為「HP加熱工程」。After the decompression process, in the first heating process, the substrate 10 is heated at the first temperature. As shown in FIG. 12, in the first heating process, the heating plate 5 is moved upward, and the substrate 10 is placed on the heating plate side reflection surface 30a of the infrared reflection part 30. The first heating process is a process of heating the substrate 10 using the hot plate 5 . Hereinafter, the first heating process is also referred to as "HP heating process".

具體而言，使基板10支持於被設置在加熱板側反射面30a之基板支持凸部35(參照圖3)。依此，因加熱板側反射面30a接近於基板10之第二面10b，故加熱板5之熱經由紅外線反射部30而傳遞至基板10。例如，在HP加熱工程中，加熱板5之溫度維持200℃。因此，基板溫度能夠上升至200℃。另外，在HP加熱工程中，紅外線加熱器6之電源維持斷開。Specifically, the board|substrate 10 is supported by the board|substrate support convex part 35 (refer FIG. 3) provided in the reflection surface 30a by the heater board side. Accordingly, since the heating plate side reflective surface 30 a is close to the second surface 10 b of the substrate 10 , the heat of the heating plate 5 is transmitted to the substrate 10 through the infrared reflection portion 30 . For example, in the HP heating process, the temperature of the heating plate 5 is maintained at 200°C. Therefore, the substrate temperature can rise up to 200°C. In addition, during the HP heating process, the power supply of the infrared heater 6 is kept off.

另外，在HP加熱工程中，加熱板5位於通過部8h(參照圖1)內。為了便於說明，在圖12中，以二點鏈線表示移動前(減壓工程時之位置)之加熱板5，以實線表示移動後(HP加熱工程時之位置)的加熱板5。In addition, in the HP heating process, the heating plate 5 is located in the passing part 8h (refer FIG. 1). For ease of description, in Fig. 12, the heating plate 5 before moving (the position during the decompression process) is represented by the two-dot chain line, and the heating plate 5 after the movement (the position during the HP heating process) is represented by the solid line.

在HP加熱工程中，在保持減壓工程之氛圍的狀態，在基板溫度從50℃至300℃之範圍，加熱基板10，以使被塗佈在基板10之聚醯亞胺形成用液之醯亞胺化前之分子鏈配向。例如，在HP加熱工程中，將加熱基板10之時間設成1min以上10min以下。In the HP heating process, while maintaining the atmosphere of the decompression process, the substrate 10 is heated in the range of the substrate temperature from 50°C to 300°C, so that the polyimide forming liquid coated on the substrate 10 is condensed. Molecular chain alignment before imidization. For example, in the HP heating process, the time for heating the substrate 10 is set to not less than 1 min and not more than 10 min.

HP加熱工程之後，在第二加熱工程中，以較第一溫度高之第二溫度加熱基板10。在第二加熱工程中，使用獨立於在HP加熱工程中使用的加熱板5另外設置的紅外線加熱器6而加熱基板10。After the HP heating process, in the second heating process, the substrate 10 is heated at a second temperature higher than the first temperature. In the second heating process, the substrate 10 is heated using the infrared heater 6 provided separately from the heating plate 5 used in the HP heating process.

如圖13所示般，在第二加熱工程中，使加熱板5移動至較HP加熱工程時之位置更上方，使基板10接近於紅外線加熱器6。第二加熱工程係使用紅外線加熱器6而加熱基板10的工程。以下，也將第二加熱工程稱為「IR加熱工程」。As shown in FIG. 13 , in the second heating process, the heating plate 5 is moved higher than the position in the HP heating process, and the substrate 10 is brought close to the infrared heater 6 . The second heating process is a process of heating the substrate 10 using the infrared heater 6 . Hereinafter, the second heating process is also referred to as "IR heating process".

例如，在IR加熱工程中，加熱板5之溫度維持200℃。再者，在IR加熱工程中，紅外線加熱器6之電源成為導通。例如，紅外線加熱器6能夠以500℃加熱基板10。因此，基板溫度能夠上升至500℃。因在IR加熱工程中，較HP加熱工程時，基板10更接近於紅外線加熱器6，故紅外線加熱器6之熱充分地傳遞至基板10。For example, in the IR heating process, the temperature of the heating plate 5 is maintained at 200°C. Furthermore, in the IR heating process, the power supply of the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 500°C. Therefore, the substrate temperature can rise up to 500°C. In the IR heating process, the substrate 10 is closer to the infrared heater 6 than in the HP heating process, so the heat of the infrared heater 6 is sufficiently transferred to the substrate 10 .

另外，在IR加熱工程中，加熱板5位於搬運滾輪8a(圖1所示之通過部8h)之上方並且紅外線加熱器6之下方。為了便於說明，在圖13中，以二點鏈線表示移動前(HP加熱工程時之位置)之加熱板5，以實線表示移動後(IR加熱工程時之位置)的加熱板5。In addition, in the IR heating process, the heating plate 5 is located above the conveyance roller 8a (passing portion 8h shown in FIG. 1 ) and below the infrared heater 6 . For convenience of description, in Fig. 13, the heating plate 5 before moving (the position during the HP heating process) is represented by a two-dot chain line, and the heating plate 5 after moving (the position during the IR heating process) is represented by a solid line.

在IR加熱工程中，在保持減壓工程之氛圍的狀態中，將基板10加熱至基板溫度從HP加熱工程之溫度成為600℃以下為止。例如，在IR加熱工程中，使基板溫度從130℃上升至500℃。再者，在IR加熱工程中，將腔室內壓力維持至20Pa以下。In the IR heating process, the substrate 10 is heated until the substrate temperature becomes 600° C. or lower from the temperature of the HP heating process while maintaining the atmosphere of the reduced pressure process. For example, in the IR heating process, the substrate temperature is raised from 130°C to 500°C. Furthermore, in the IR heating process, the pressure in the chamber is maintained below 20 Pa.

在實施型態中，IR加熱工程包含IR第一加熱工程、IR第二加熱工程及IR第三加熱工程。IR加熱工程於HP加熱工程之後，依序進行IR第一加熱工程、IR第二加熱工程、IR第三加熱工程。In an implementation form, the IR heating process includes a first IR heating process, a second IR heating process, and a third IR heating process. After the IR heating project, after the HP heating project, the first IR heating project, the second IR heating project, and the third IR heating project are carried out in sequence.

例如，在IR第一加熱工程中，在保持減壓工程之氛圍的狀態，在基板溫度從150℃至250℃之範圍，加熱基板10，以使被塗佈在基板10之聚醯亞胺形成用液之醯亞胺化前之分子鏈配向，或聚醯亞胺形成用液醯亞胺化。例如，在IR第一加熱工程中，將加熱基板10之時間設成1min以上10min以下。For example, in the IR first heating process, the substrate 10 is heated at a substrate temperature ranging from 150° C. to 250° C. while maintaining the atmosphere of the decompression process, so that the polyimide coated on the substrate 10 is formed. Molecular chain alignment before imidization with liquid, or imidization with liquid imide for polyimide formation. For example, in the first IR heating process, the time for heating the substrate 10 is set to be not less than 1 min and not more than 10 min.

例如，在IR第二加熱工程中，在保持減壓工程之氛圍的狀態，在基板溫度從250℃至350℃之範圍，加熱基板10，直至被塗佈在基板10之聚醯亞胺形成用液醯亞胺化，或使醯亞胺化時之分子鏈再配向。例如，在IR第二加熱工程中，將加熱基板10之時間設成1min以上10min以下。For example, in the IR second heating process, while maintaining the atmosphere of the decompression process, the substrate 10 is heated at a substrate temperature ranging from 250°C to 350°C until the polyimide coated on the substrate 10 is formed. Liquid imidization, or re-alignment of molecular chains during imidization. For example, in the IR second heating process, the time for heating the substrate 10 is set to 1 min to 10 min.

例如，在IR第三加熱工程中，在保持減壓工程之氛圍的狀態，在基板溫度從350℃至500℃之範圍，加熱基板10，直至被塗佈在基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈再配向，或分子鏈再配列。例如，在IR第三加熱工程中，將加熱基板10之時間設成1min以上15min以下。For example, in the third IR heating process, while maintaining the atmosphere of the decompression process, the substrate 10 is heated at a substrate temperature ranging from 350°C to 500°C until the polyimide coated on the substrate 10 is formed. Molecular chain re-alignment or molecular chain rearrangement during imidization of liquid. For example, in the third IR heating process, the time for heating the substrate 10 is set to 1 min to 15 min.

在IR加熱工程中，使用被配置在加熱板5和紅外線加熱器6之間的加熱板側反射面30a反射朝向加熱板5的紅外線。依此，可以迴避加熱板5吸收紅外線之情形。另外，藉由加熱板側反射面30a被反射之紅外線之至少一部分被基板10吸收。In the IR heating process, infrared rays directed toward the heating plate 5 are reflected using the heating plate side reflection surface 30 a arranged between the heating plate 5 and the infrared heater 6 . Accordingly, it is possible to avoid the situation that the heating plate 5 absorbs infrared rays. In addition, at least a part of the infrared rays reflected by the heater plate side reflective surface 30 a is absorbed by the substrate 10 .

除此之外，在IR加熱工程中，紅外線在被設置在腔室2之內面的腔室側反射面2a反射。依此，可以提高腔室2內之溫度均勻性。另外，藉由腔室側反射面2a被反射之紅外線之至少一部分被基板10吸收。In addition, in the IR heating process, infrared rays are reflected by the chamber-side reflection surface 2 a provided on the inner surface of the chamber 2 . Accordingly, the temperature uniformity in the chamber 2 can be improved. In addition, at least a part of the infrared rays reflected by the chamber-side reflective surface 2 a is absorbed by the substrate 10 .

除此之外，在IR加熱工程中，冷卻加熱板5。例如，在IR加熱工程中，使冷媒(空氣)通過被配置在加熱部之內部的冷媒通過部51(參照圖9)。Besides, in the IR heating process, the heating plate 5 is cooled. For example, in the IR heating process, the refrigerant (air) is passed through the refrigerant passing portion 51 (see FIG. 9 ) arranged inside the heating portion.

於IR加熱工程之後，進行使基板10冷卻之冷卻工程。例如，在冷卻工程中，保持減壓工程之氛圍，或是低氧氛圍之狀態下，將基板10冷卻至基板溫度從IR加熱工程之溫度成為能夠搬運基板10之溫度為止。在冷卻工程中，使紅外線加熱器6之電源成為斷開。例如，在冷卻工程中，將基板10冷卻至基板溫度成為250℃以下為止。例如，在冷卻工程中，將冷卻基板10之時間設成1min以上5min以下。After the IR heating process, a cooling process for cooling the substrate 10 is performed. For example, in the cooling process, the substrate 10 is cooled until the temperature of the substrate 10 changes from the temperature of the IR heating process to a temperature at which the substrate 10 can be transported while maintaining the atmosphere of the decompression process or a low-oxygen atmosphere. During the cooling process, the power supply of the infrared heater 6 is turned off. For example, in the cooling process, the substrate 10 is cooled until the substrate temperature becomes 250° C. or lower. For example, in the cooling process, the time for cooling the substrate 10 is set to not less than 1 minute and not more than 5 minutes.

藉由經過上述工程，進行被塗佈在基板10之聚醯亞胺形成用液之揮發或醯亞胺化，並且進行被塗佈在基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之再配列，可以形成聚醯亞胺膜。By going through the above steps, the volatilization or imidization of the polyimide-forming liquid coated on the substrate 10 is performed, and the imidization of the polyimide-forming liquid coated on the substrate 10 is performed. When the molecular chains are rearranged, a polyimide film can be formed.

在實施型態中，從抑制腔室2之收容空間2S中之氣體在腔室2之內面被冷卻而成為昇華物之情形的觀點來看，進行以下的腔室加熱工程。 　　在腔室加熱工程中，加熱腔室2之內面之至少一部分。在實施型態中，在腔室加熱工程中，使用被配置在腔室2之周壁23的腔室加熱部81，加熱腔室2之周壁23之內面(參照圖2)。例如，在腔室加熱工程中，進行加熱以使腔室2之周壁23之內面之溫度成為40℃以上並且150℃以下之範圍。例如，腔室加熱工程至少在基板加熱工程之期間時常被進行。In the embodiment, from the viewpoint of preventing the gas in the storage space 2S of the chamber 2 from being cooled inside the chamber 2 to become a sublimation product, the following chamber heating process is performed. In the chamber heating process, at least a part of the inner surface of the chamber 2 is heated. In the embodiment, in the chamber heating process, the inner surface of the peripheral wall 23 of the chamber 2 is heated using the chamber heating unit 81 disposed on the peripheral wall 23 of the chamber 2 (see FIG. 2 ). For example, in the chamber heating process, heating is performed so that the temperature of the inner surface of the peripheral wall 23 of the chamber 2 is in the range of 40° C. or higher and 150° C. or lower. For example, chamber heating sessions are often performed at least during substrate heating sessions.

實施型態之基板加熱方法進一步包含真空配管加熱工程、氣體供給配管加熱工程及基板搬出搬入部加熱工程。 　　在真空配管加熱工程中，加熱被連接於腔室2之真空配管3a之內面之至少一部分。在實施型態中，在真空配管加熱工程中，使用覆蓋真空配管3a之外面的真空配管加熱部82，加熱真空配管3a之內面(參照圖2)。例如，真空配管加熱工程至少在基板加熱工程之期間時常被進行。The substrate heating method of the embodiment further includes a vacuum piping heating process, a gas supply piping heating process, and a substrate loading and unloading part heating process. In the vacuum pipe heating process, at least a part of the inner surface of the vacuum pipe 3a connected to the chamber 2 is heated. In the embodiment, in the vacuum pipe heating process, the vacuum pipe heating unit 82 covering the outer surface of the vacuum pipe 3a is used to heat the inner surface of the vacuum pipe 3a (see FIG. 2 ). For example, a vacuum piping heating process is often performed at least during a substrate heating process.

在氣體供給配管加熱工程中，加熱氣體供給配管4a之內面之至少一部分。在實施型態中，在氣體供給配管加熱工程中，使用覆蓋氣體供給配管4a之外面的氣體供給配管加熱部83，加熱氣體供給配管4a之內面(參照圖2)。例如，氣體供給配管加熱工程至少在基板加熱工程之期間時常被進行。In the gas supply pipe heating process, at least a part of the inner surface of the gas supply pipe 4a is heated. In the embodiment, in the gas supply pipe heating process, the gas supply pipe heating unit 83 covering the outside of the gas supply pipe 4a is used to heat the inner surface of the gas supply pipe 4a (see FIG. 2 ). For example, the gas supply piping heating process is often performed at least during the substrate heating process.

在基板搬出搬入部加熱工程，能夠加熱基板搬出搬入部24之至少一部分。在實施型態中，在基板搬出搬入部加熱工程中，使用覆蓋基板搬出搬入部24之外面的基板搬出搬入部加熱部84，加熱基板搬出搬入部24(參照圖2)。例如，基板搬出搬入部加熱工程至少在基板加熱工程之期間時常被進行。In the substrate loading/unloading section heating process, at least a part of the substrate loading/unloading section 24 can be heated. In the embodiment, in the substrate loading and unloading section heating process, the substrate loading and unloading section heating section 84 covering the outside surface of the substrate loading and unloading section 24 is used to heat the substrate loading and unloading section 24 (see FIG. 2 ). For example, the substrate loading/unloading section heating process is always performed at least during the substrate heating process.

在實施型態中，從使被塗佈在基板10之聚醯亞胺形成用液穩定地硬化之觀點來看，進行以下之壓力檢測工程及控制工程。 　　在壓力檢測工程中，檢測腔室內壓力。在實施型態中，於壓力檢測工程中，使用壓力檢測部14，檢測收容空間2S之壓力(參照圖2)。例如，壓力檢測工程至少在基板加熱工程之期間時常被進行。In the embodiment, from the viewpoint of stably curing the polyimide forming liquid coated on the substrate 10, the following pressure detection process and control process are performed. In the pressure detection project, the pressure in the chamber is detected. In the embodiment, in the pressure detection process, the pressure detection unit 14 is used to detect the pressure of the storage space 2S (see FIG. 2 ). For example, pressure testing sessions are often performed at least during substrate heating sessions.

在控制工程中，根據在壓力檢測工程之腔室內壓力的檢測結果，控制當作基板加熱部而發揮功能之加熱板5及紅外線加熱器6之至少一方(參照圖2)。在實施型態中，使用控制部15而控制加熱板5及紅外線加熱器6之至少一方之輸出及驅動時間(參照圖1)。In the control process, at least one of the heating plate 5 and the infrared heater 6 functioning as a substrate heating unit is controlled based on the detection result of the chamber pressure in the pressure detection process (see FIG. 2 ). In the embodiment, the output and driving time of at least one of the heating plate 5 and the infrared heater 6 are controlled using the control unit 15 (see FIG. 1 ).

在控制部15記憶有與事先算出的收容空間2S之壓力(腔室內壓力)和基板10之溫度(基板溫度)和基板10之加熱時間(基板加熱時間)之關係有關的資訊(以下，也稱為「事前算出資訊」。參照圖18及圖19。)。在控制工程中，根據事前算出資訊，和在壓力檢測工程之腔室內壓力的檢測結果，以腔室內壓力不超過壓力臨界值之方式，控制加熱板5及紅外線加熱器6之至少一方之輸出及驅動時間。Information related to the relationship between the pressure of the storage space 2S (chamber internal pressure), the temperature of the substrate 10 (substrate temperature), and the heating time of the substrate 10 (substrate heating time) calculated in advance (hereinafter also referred to as It is "pre-calculated information". Refer to Fig. 18 and Fig. 19.). In the control engineering, according to the pre-calculated information and the detection result of the chamber pressure in the pressure detection engineering, the output of at least one of the heating plate 5 and the infrared heater 6 is controlled in such a way that the pressure in the chamber does not exceed the pressure critical value. drive time.

在此，壓力臨界值意味著可以適合被塗佈於基板之聚醯亞胺形成用液之硬化條件的腔室內壓力之最大值。在實施型態中，壓力臨界值被設置成腔室內壓力之變動量Dp(參照圖19)不會超過10Pa。Here, the pressure threshold means the maximum value of the pressure in the chamber suitable for the hardening condition of the polyimide forming liquid applied on the substrate. In an embodiment, the pressure threshold is set such that the variation Dp (refer to FIG. 19 ) of the pressure in the chamber does not exceed 10 Pa.

在此，腔室內壓力之變動量Dp意味著腔室內壓力之最小值Pmin和最大值Pmax之差(參照圖19)。在實施型態中，腔室內壓力之最小值Pmin係在IR加熱工程T3之初期被檢測(參照圖19)。在實施型態中，腔室內壓力之最大值Pmax係在IR加熱工程T3檢測到腔室內壓力之最小值Pmin之後被檢測(參照圖19)。Here, the fluctuation amount Dp of the pressure in the chamber means the difference between the minimum value Pmin and the maximum value Pmax of the pressure in the chamber (see FIG. 19 ). In the implementation form, the minimum value Pmin of the pressure in the chamber is detected at the beginning of the IR heating process T3 (refer to FIG. 19 ). In an embodiment, the maximum value Pmax of the pressure in the chamber is detected after the IR heating process T3 detects the minimum value Pmin of the pressure in the chamber (refer to FIG. 19 ).

在控制工程中，根據事前算出資訊，和在壓力檢測工程之腔室內壓力的檢測結果，以腔室內壓力不超過壓力臨界值之方式，切換加熱板5及紅外線加熱器6之至少一方之驅動。例如，在控制工程中，以腔室內壓力之變動量Dp不超過10Pa之方式，控制加熱板5及紅外線加熱器6之至少一方之輸出及驅動時間，或切換加熱板5及紅外線加熱器6之至少一方的驅動。In the control process, according to the pre-calculated information and the detection result of the chamber pressure in the pressure detection process, the drive of at least one of the heating plate 5 and the infrared heater 6 is switched so that the pressure in the chamber does not exceed the pressure threshold. For example, in the control engineering, control the output and driving time of at least one of the heating plate 5 and the infrared heater 6, or switch the heating plate 5 and the infrared heater 6 in such a way that the variation Dp of the pressure in the chamber does not exceed 10 Pa. Driven by at least one side.

除此之外，在控制工程中，即使控制氣體供給部4亦可(參照圖1)。例如，即使在控制工程中，藉由對收容空間2S供給N2 等之惰性氣體，調整腔室內壓力亦可。In addition, in the control process, the gas supply part 4 may be controlled (refer FIG. 1). For example, in the control process, the pressure in the chamber may be adjusted by supplying an inert gas such as N 2 to the storage space 2S.

如上述般，若藉由本實施型態時，藉由包含根據壓力檢測部14之檢測結果而控制基板加熱部5、6的控制部15，即使被塗佈在基板10之聚醯亞胺形成用液之硬化條件依壓力而變動之情況，亦可以根據壓力變動所致的基板10之加熱條件，增減基板加熱部5、6之輸出等。因此，可以使被塗佈在基板10之聚醯亞胺形成用液穩定地硬化。As mentioned above, according to this embodiment, by including the control unit 15 that controls the substrate heating units 5 and 6 based on the detection result of the pressure detection unit 14, even the polyimide coated on the substrate 10 for forming When the curing conditions of the liquid change depending on the pressure, the output of the substrate heating parts 5 and 6 may be increased or decreased according to the heating conditions of the substrate 10 caused by the pressure fluctuation. Therefore, the polyimide forming liquid coated on the substrate 10 can be stably cured.

再者，控制部15根據與事先算出的腔室內壓力和基板溫度和基板加熱時間之關係有關之資訊(事前算出資訊)，和壓力檢測部14之檢測結果，以腔室內壓力不超過壓力臨界值之方式，控制基板加熱部5、6之輸出及驅動時間之至少一方，依此達到以下效果。 　　本案發明者研究之結果，發現當腔室內壓力超過壓力臨界值時，在獲得使被塗佈於基板10的聚醯亞胺形成用液加熱硬化後的膜之時，出現了該膜無法確保期望之特性的可能性。若藉由該構成時，可以根據事前算出資訊，從壓力檢測部14之檢測結果，以腔室內壓力不超過壓力臨界值之方式，增減基板加熱部5、6之輸出或調整驅動時間。因此，可以使被塗佈在基板10之聚醯亞胺形成用液更加穩定地硬化。Furthermore, the control unit 15 determines that the pressure in the chamber does not exceed the critical pressure value based on the information (calculated in advance) related to the relationship between the pressure in the chamber, the substrate temperature, and the heating time of the substrate calculated in advance, and the detection result of the pressure detection unit 14. In this way, at least one of the output and driving time of the substrate heating parts 5 and 6 is controlled, thereby achieving the following effects. As a result of research by the inventors of the present application, it was found that when the pressure in the chamber exceeds the critical pressure value, when the polyimide forming liquid coated on the substrate 10 is heated and hardened to obtain a film, the film cannot ensure the expected performance. the possibility of its characteristics. With this configuration, based on pre-calculated information, from the detection result of the pressure detection part 14, the output of the substrate heating parts 5 and 6 can be increased or decreased or the driving time can be adjusted so that the pressure in the chamber does not exceed the pressure threshold. Therefore, the polyimide forming liquid coated on the substrate 10 can be cured more stably.

再者，基板加熱部5、6藉由包含被配置在基板10之一方面側的加熱板5，和被配置在基板10之另一方面側，並且能夠藉由紅外線加熱基板10之紅外線加熱器6，以達到以下效果。 　　若藉由該構成時，因藉由紅外線加熱器6被配置在基板10之另一方面側，從紅外線加熱器6發出的熱，從基板10之另一方面側朝向一方面側傳遞，故加熱板5所致的加熱和紅外線加熱器6所致的加熱相互結合，可以更加有效果地加熱基板10。 　　然而，當以烤箱使熱風循環而加熱基板之方式時，有異物藉由熱風之循環而被捲起至基板之收容空間。對此，若藉由該構成時，因可以在減壓收容空間2S之氛圍的狀態下，加熱基板10，故可以降低異物被捲起至收容空間2S之風險。因此，從抑制異物附著於腔室2之內面或基板10的方面上來看為適合。除此之外，因藉由被配置在基板10之一方面側的加熱板5，可以使基板10之加熱溫度在基板10之面內均勻化，故可以提升膜特性。例如，藉由使加熱板5之一面和基板10之第二面10b抵接之狀態加熱基板10，可以提高基板10之加熱溫度之面內均勻性。Furthermore, the substrate heating parts 5 and 6 include a heating plate 5 arranged on one side of the substrate 10 and an infrared heater arranged on the other side of the substrate 10 and capable of heating the substrate 10 by infrared rays. 6, to achieve the following effects. With this configuration, since the infrared heater 6 is arranged on the other side of the substrate 10, the heat emitted from the infrared heater 6 is transferred from the other side of the substrate 10 to the one side, thereby heating the substrate 10. The heating by the plate 5 and the heating by the infrared heater 6 are combined to heat the substrate 10 more effectively. However, when the substrate is heated by circulating the hot air in the oven, foreign matter is rolled up into the receiving space of the substrate by the circulation of the hot air. On the other hand, with this configuration, since the substrate 10 can be heated in a state where the atmosphere in the storage space 2S is reduced, the risk of foreign matter being rolled up into the storage space 2S can be reduced. Therefore, it is suitable from the viewpoint of suppressing the attachment of foreign matter to the inner surface of the chamber 2 or the substrate 10 . In addition, since the heating temperature of the substrate 10 can be made uniform within the surface of the substrate 10 by the heating plate 5 disposed on one side of the substrate 10, film characteristics can be improved. For example, by heating the substrate 10 with one surface of the heating plate 5 in contact with the second surface 10 b of the substrate 10 , the in-plane uniformity of the heating temperature of the substrate 10 can be improved.

再者，控制部15根據事前算出資訊和壓力檢測部14之檢測結果，以腔室內壓力不超過壓力臨界值之方式，切換加熱板5及紅外線加熱器6之至少一方的驅動，依此達到以下效果。可以根據事前算出資訊，從壓力檢測部14之檢測結果，以腔室內壓力不超過壓力臨界值之方式，增減加熱板5及紅外線加熱器6之至少一方之輸出或調整驅動時間。因此，可以使被塗佈在基板10之聚醯亞胺形成用液更加穩定地硬化。除此之外，因依據壓力檢測部14之檢測結果，將加熱板5及紅外線加熱器6之一方設成導通，將另一方設成斷開，故比起加熱板5及紅外線加熱器6之雙方設成導通之情況，可以謀求省能源化。Moreover, the control unit 15 switches the driving of at least one of the heating plate 5 and the infrared heater 6 according to the pre-calculated information and the detection result of the pressure detection unit 14, so that the pressure in the chamber does not exceed the critical pressure value, so as to achieve the following Effect. According to the pre-calculated information, the output of at least one of the heating plate 5 and the infrared heater 6 can be increased or decreased or the driving time can be adjusted from the detection result of the pressure detection unit 14 so that the pressure in the chamber does not exceed the pressure threshold. Therefore, the polyimide forming liquid coated on the substrate 10 can be cured more stably. In addition, because according to the detection result of the pressure detection part 14, one of the heating plate 5 and the infrared heater 6 is set to conduction, and the other is set to be off, so compared with the heating plate 5 and the infrared heater 6 If the two sides are set to be connected, energy saving can be achieved.

再者，藉由腔室2之內面之至少一部分被設成反射紅外線之腔室側反射面2a，以達到以下效果。因藉由腔室側反射面2a被反射之紅外線之至少一部分被基板10吸收，故可以促進基板10之加熱。另外，可以根據藉由腔室側反射面2a被反射的紅外線所致的基板10之溫度上升量，降低紅外線加熱器6之輸出。Furthermore, at least a part of the inner surface of the chamber 2 is provided as a chamber-side reflective surface 2a that reflects infrared rays, so as to achieve the following effects. Since at least a part of the infrared rays reflected by the chamber-side reflective surface 2 a is absorbed by the substrate 10 , heating of the substrate 10 can be promoted. In addition, the output of the infrared heater 6 can be reduced according to the amount of temperature rise of the substrate 10 due to the infrared rays reflected by the chamber-side reflective surface 2 a.

再者，藉由加熱板5能夠在20℃以上並且300℃以下之範圍加熱基板10，可以穩定地進行除去被塗佈在基板10之聚醯亞胺形成用液之溶劑或聚醯亞胺形成用液之預備硬化等。除此之外，藉由紅外線加熱器6能夠在150℃以上且600℃以下之範圍加熱基板10，可以使被塗佈於基板10的聚醯亞胺形成用液更加穩定地硬化。除此之外，可以穩定地進行聚醯亞胺形成用液之醯亞胺化時之分子鏈之再配列，可以更進一步地提升膜特性。Furthermore, since the heating plate 5 can heat the substrate 10 in the range of 20° C. to 300° C., the removal of the solvent of the polyimide forming liquid coated on the substrate 10 or the formation of the polyimide can be performed stably. Preparation and hardening of liquids, etc. In addition, since the infrared heater 6 can heat the substrate 10 in the range of 150° C. to 600° C., the polyimide forming liquid applied on the substrate 10 can be cured more stably. In addition, the rearrangement of molecular chains during imidization of the polyimide forming solution can be stably performed, and the film properties can be further improved.

再者，藉由包含被配置在加熱板5和紅外線加熱器6之間，並且具有反射朝向加熱板5之紅外線的加熱板側反射面30a的紅外線反射部30，加熱板5包含能夠載置紅外線反射部30之載置面5a，以達到以下效果。若藉由該構成時，因藉由包含被配置在加熱板5和紅外線加熱器6之間，並且反射朝向加熱板5之紅外線的加熱板側反射面30a，可以回避加熱板5吸收紅外線之情形，故可以抑制紅外線所致的加熱板5之升溫。因此，無須考慮隨著紅外線所致的加熱板5之升溫而引起的加熱板5之降溫時間。因此，可以使加熱板5之降溫所需的作業時間縮短化。除此之外，因藉由加熱板側反射面30a被反射之紅外線之至少一部分被基板10吸收，故可以促進基板10之加熱。另外，可以根據藉由加熱板側反射面30a被反射的紅外線所致的基板10之溫度上升量，降低紅外線加熱器6之輸出。除此之外，在藉由加熱板5包含能夠載置紅外線反射部30之載置面5a，減壓收容空間2S之氛圍而成為真空狀態之情況，可以使在加熱板5的載置面5a和紅外線反射部30之間真空隔熱。即是，可以將在載置面5a和紅外線反射部30之界面的間隙當作隔熱層而發揮功能。因此，可以抑制紅外線所致的加熱板5之升溫。另外，在對收容空間2S供給氮(N2 沖洗)之情況，可以解除載置面5a和紅外線反射部30之間的真空隔熱。因此，可以推定加熱板5降溫之時，紅外線反射部30也降溫。Furthermore, by including the infrared reflector 30 disposed between the heating plate 5 and the infrared heater 6 and having a heating plate side reflective surface 30a reflecting infrared rays directed toward the heating plate 5, the heating plate 5 includes an infrared ray reflector capable of carrying infrared rays. The placement surface 5a of the reflector 30 achieves the following effects. With this configuration, by including the heating plate side reflective surface 30a that is disposed between the heating plate 5 and the infrared heater 6 and that reflects infrared rays directed toward the heating plate 5, it is possible to avoid the situation that the heating plate 5 absorbs infrared rays. , so the temperature rise of the heating plate 5 caused by infrared rays can be suppressed. Therefore, there is no need to consider the cooling time of the heating plate 5 due to the temperature rise of the heating plate 5 by infrared rays. Therefore, the work time required for cooling the heating plate 5 can be shortened. In addition, since at least a part of the infrared rays reflected by the heating plate side reflective surface 30 a is absorbed by the substrate 10 , heating of the substrate 10 can be promoted. In addition, the output of the infrared heater 6 can be reduced according to the amount of temperature rise of the substrate 10 due to the infrared rays reflected by the heater plate side reflective surface 30a. In addition, when the heating plate 5 includes the mounting surface 5 a on which the infrared reflection unit 30 can be mounted, and the atmosphere of the storage space 2S is reduced to a vacuum state, the mounting surface 5 a of the heating plate 5 can be It is vacuum-insulated from the infrared reflector 30 . That is, the gap at the interface between the mounting surface 5 a and the infrared reflection unit 30 can function as a heat insulating layer. Therefore, the temperature rise of the heating plate 5 by infrared rays can be suppressed. In addition, when nitrogen is supplied to the storage space 2S (N 2 flushing), the vacuum heat insulation between the mounting surface 5 a and the infrared reflection unit 30 can be canceled. Therefore, it can be estimated that when the temperature of the heating plate 5 is lowered, the temperature of the infrared reflection unit 30 is also lowered.

再者，藉由僅在基板10之第一面10a塗佈聚醯亞胺形成用液，加熱板5被配置在基板10之第一面10a相反側之第二面10b之側，以達到以下效果。因從加熱板5發出的熱從基板10之第二面10b之側朝向第一面10a之側傳遞，故可以有效果地加熱基板10。除此之外，在以加熱板5加熱基板10之期間，可以效率佳地進行除去存在於被塗佈在基板10之聚醯亞胺形成用液之溶劑，或聚醯亞胺形成用液之預備硬化、成膜時的脫氣等。Moreover, by coating the polyimide forming liquid only on the first surface 10a of the substrate 10, the heating plate 5 is arranged on the side of the second surface 10b opposite to the first surface 10a of the substrate 10, so as to achieve the following Effect. Since the heat emitted from the heating plate 5 is transferred from the side of the second surface 10b of the substrate 10 toward the side of the first surface 10a, the substrate 10 can be effectively heated. In addition, while the substrate 10 is being heated by the heating plate 5, the solvent of the polyimide-forming liquid coated on the substrate 10, or the solvent of the polyimide-forming liquid can be efficiently removed. Preliminary hardening, degassing during film formation, etc.

再者，藉由能夠階段性地加熱加熱板5及紅外線加熱器6之雙方，以達到以下效果。比起加熱板5及紅外線加熱器6能夠僅以一定溫度加熱之情況，可以效率佳地加熱基板10，以使適合於被塗佈於基板10之聚醯亞胺形成用液之硬化條件。例如，可以使被塗佈於基板10之聚醯亞胺形成用液階段性地乾燥，可以良好地硬化。Furthermore, by being able to heat both the heating plate 5 and the infrared heater 6 step by step, the following effects can be achieved. Compared with the case where the heating plate 5 and the infrared heater 6 can only be heated at a certain temperature, the substrate 10 can be efficiently heated so as to be suitable for curing conditions of the polyimide forming liquid coated on the substrate 10 . For example, the polyimide forming liquid applied on the substrate 10 can be dried in stages, and can be cured favorably.

再者，藉由包含能夠調整加熱板5及紅外線加熱器6和基板10之相對位置的位置調整部7，比起不具備上述位置調整部7之情況，容易調整基板10之加熱溫度。例如，在提高基板10之加熱溫度之情況，可以使加熱板5及紅外線加熱器6和基板10接近，在降低基板10之加熱溫度之情況，可以使加熱板5及紅外線加熱器6與基板10分離。因此，容易階段性地加熱基板10。Furthermore, by including the position adjustment unit 7 capable of adjusting the relative positions of the heating plate 5, the infrared heater 6, and the substrate 10, it is easier to adjust the heating temperature of the substrate 10 than when the position adjustment unit 7 is not provided. For example, when increasing the heating temperature of the substrate 10, the heating plate 5 and the infrared heater 6 can be brought close to the substrate 10; separate. Therefore, it is easy to heat the substrate 10 step by step.

再者，藉由位置調整部7包含能夠使基板10在加熱板5和紅外線加熱器6之間移動之移動部7a，以達到下述效果。藉由使基板10在加熱板5和紅外線加熱器6之間移動，可以在將加熱板5及紅外線加熱器6之至少一方配置在定位置之狀態下，調整基板10之加熱溫度。因此，因無須另外設置能夠移動加熱板5及紅外線加熱器6之至少一方的裝置，故可以用簡單構成調整基板10之加熱溫度。Moreover, since the position adjustment part 7 includes the moving part 7a which can move the board|substrate 10 between the heating plate 5 and the infrared heater 6, the following effect can be achieved. By moving the substrate 10 between the heating plate 5 and the infrared heater 6, it is possible to adjust the heating temperature of the substrate 10 with at least one of the heating plate 5 and the infrared heater 6 arranged at a fixed position. Therefore, since there is no need to separately provide a device capable of moving at least one of the heating plate 5 and the infrared heater 6, the heating temperature of the substrate 10 can be adjusted with a simple configuration.

再者，在加熱板5和紅外線加熱器6之間，設置有設成能夠搬運基板10之搬運部8，藉由在搬運部8形成能夠使移動部7a通過的通過部8h，以達到以下效果。使基板10在加熱板5和紅外線加熱器6之間移動之情況，因可以使通過部8h通過，故無須迂迴搬運部8移動基板10。因此，因無須另外設置用以迂迴搬運部8而移動基板10之裝置，故可以用簡單構成流暢地進行基板10之移動。Furthermore, between the heating plate 5 and the infrared heater 6, a conveyance part 8 configured to convey the substrate 10 is provided. By forming a passing part 8h in the conveyance part 8 through which the moving part 7a can pass, the following effects are achieved. . When the substrate 10 is moved between the heating plate 5 and the infrared heater 6, since the passage part 8h can pass, it is not necessary to move the substrate 10 around the conveyance part 8. Therefore, since it is not necessary to separately provide a device for moving the substrate 10 while detouring the conveyance section 8, the substrate 10 can be moved smoothly with a simple configuration.

再者，藉由包含能夠檢測基板10之溫度的溫度檢測部9，可以即時掌握基板10之溫度。例如，藉由根據溫度檢測部9之檢測結果加熱基板10，可以抑制基板10之溫度偏離目標值。Furthermore, by including the temperature detection unit 9 capable of detecting the temperature of the substrate 10, the temperature of the substrate 10 can be grasped in real time. For example, by heating the substrate 10 based on the detection result of the temperature detection unit 9 , it is possible to suppress the temperature of the substrate 10 from deviating from the target value.

再者，藉由基板10及基板加熱部5、6被收容在共同的腔室2，可以在共同的腔室2內一併對基板10進行根據基板加熱部5、6之加熱處理。例如，可以在共同的腔室2內對基板10一併進行加熱板5所致的加熱處理和紅外線加熱器6所致的加熱處理。即是，如加熱板及紅外線加熱器被收容於彼此不同的腔室之情況般，不需要用以在不同的兩個腔室間搬運基板之時間。因此，可以效率更佳地進行基板10之加熱處理。再者，比起具備有不同的兩個腔室之情況，可以使裝置全體小型化。Furthermore, since the substrate 10 and the substrate heating units 5 and 6 are housed in the common chamber 2 , the substrate 10 can be collectively subjected to heat treatment by the substrate heating units 5 and 6 in the common chamber 2 . For example, the heat treatment by the hot plate 5 and the heat treatment by the infrared heater 6 may be collectively performed on the substrate 10 in the common chamber 2 . That is, as in the case where the hot plate and the infrared heater are housed in different chambers, it does not require time for transferring the substrate between two different chambers. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. Furthermore, compared with the case where two different chambers are provided, the overall size of the device can be reduced.

再者，藉由包含根據在壓力檢測工程之腔室內壓力之檢測結果而控制基板加熱部5、6的控制工程，即使被塗佈在基板10之聚醯亞胺形成用液之硬化條件依壓力而變動之情況，亦可以根據壓力變動所致的基板10之加熱條件，增減基板加熱部5、6之輸出等。因此，可以使被塗佈在基板10之聚醯亞胺形成用液穩定地硬化。Moreover, by including the control process of controlling the substrate heating parts 5 and 6 based on the detection result of the pressure in the chamber in the pressure detection process, even if the curing condition of the polyimide forming liquid coated on the substrate 10 depends on the pressure As for the variation, the output of the substrate heating parts 5 and 6 may be increased or decreased according to the heating conditions of the substrate 10 caused by the pressure variation. Therefore, the polyimide forming liquid coated on the substrate 10 can be stably cured.

再者，在控制工程中，根據事前算出資訊，和在壓力檢測工程之腔室內壓力的檢測結果，以腔室內壓力不超過壓力臨界值之方式，控制基板加熱部5、6之輸出及驅動時間之至少一方，以達到以下效果。可以根據事前算出資訊，從在壓力檢測工程之腔室內壓力之檢測結果，以腔室內壓力不超過壓力臨界值之方式，增減基板加熱部5、6之輸出或調整驅動時間。因此，可以使被塗佈在基板10之聚醯亞胺形成用液更加穩定地硬化。Furthermore, in the control process, based on the pre-calculated information and the detection result of the pressure in the chamber in the pressure detection process, the output and driving time of the substrate heating parts 5 and 6 are controlled in such a way that the pressure in the chamber does not exceed the critical pressure value. At least one of them to achieve the following effects. According to the pre-calculated information, from the detection result of the pressure in the chamber in the pressure detection process, the output of the substrate heating parts 5 and 6 can be increased or decreased or the driving time can be adjusted in such a way that the pressure in the chamber does not exceed the critical pressure value. Therefore, the polyimide forming liquid coated on the substrate 10 can be cured more stably.

再者，在控制工程中根據事前算出資訊和在壓力檢測工程之腔室內壓力之檢測結果，以腔室內壓力不超過壓力臨界值之方式，切換加熱板5及紅外線加熱器6之至少一方的驅動，依此達到以下效果。可以根據事前算出資訊，從在壓力檢測工程之腔室內壓力之檢測結果，以腔室內壓力不超過壓力臨界值之方式，增減加熱板5及紅外線加熱器6之至少一方之輸出或調整驅動時間。因此，可以使被塗佈在基板10之聚醯亞胺形成用液更加穩定地硬化。除此之外，因依據在壓力檢測工程之腔室內壓力之檢測結果，將加熱板5及紅外線加熱器6之一方設成導通，將另一方設成斷開，故比起加熱板5及紅外線加熱器6之雙方設成導通之情況，可以謀求省能源化。Furthermore, in the control engineering, according to the pre-calculated information and the detection result of the chamber pressure in the pressure detection engineering, the drive of at least one of the heating plate 5 and the infrared heater 6 is switched so that the pressure in the chamber does not exceed the pressure critical value. , so as to achieve the following effect. It is possible to increase or decrease the output of at least one of the heating plate 5 and the infrared heater 6 or adjust the driving time based on the information calculated in advance, from the detection result of the pressure in the chamber in the pressure detection project, so that the pressure in the chamber does not exceed the pressure critical value. . Therefore, the polyimide forming liquid coated on the substrate 10 can be cured more stably. In addition, according to the detection result of the pressure in the chamber of the pressure detection project, one of the heating plate 5 and the infrared heater 6 is set to conduction, and the other is set to be disconnected, so compared with the heating plate 5 and the infrared heater 6 When both sides of the heater 6 are connected, energy saving can be achieved.

(第二實施型態) 　　接著，針對本發明之第二實施型態，使用圖14～圖17予以說明。 　　第二實施型態中，相對於第一實施型態，位置調整部207之構成尤其不同。在圖14～圖17中，對與第一實施型態相同之構成賦予相同符號，省略其詳細說明。 　　圖14係包含在與第二實施型態有關之基板加熱裝置201的加熱單元80、隔熱構件26及蓋構件27之剖面的相當於圖2的圖示。(Second Embodiment) Next, a second embodiment of the present invention will be described using FIGS. 14 to 17 . In the second embodiment, the configuration of the position adjustment unit 207 is particularly different from that of the first embodiment. In FIGS. 14 to 17, the same components as those in the first embodiment are assigned the same reference numerals, and detailed description thereof will be omitted. FIG. 14 is a diagram corresponding to FIG. 2 in the cross section of the heating unit 80, the heat insulating member 26, and the cover member 27 included in the substrate heating apparatus 201 related to the second embodiment.

＜位置調整部＞ 　　如圖14所示般，位置調整部207具備有收容部270、移動部275及驅動部279。 　　收容部270被配置在腔室2之下側。收容部270能夠收容移動部275及驅動部279。收容部270被形成長方體之箱狀。具體而言，收容部270藉由矩形板狀之第一支持板271，和與第一支持板271相向的矩形板狀之第二支持板272，和與第一支持板271及第二支持板272之外周緣連結並且覆蓋成包圍移動部275及驅動部279之周圍的罩板273所形成。另外，即使不設置罩板273亦可。即是，位置調整部207若至少具備第一支持板271、移動部275及驅動部279即可。例如，即使設置覆蓋裝置全體之外裝蓋亦可。<Position Adjustment Unit> As shown in FIG. 14 , the position adjustment unit 207 includes a storage unit 270 , a moving unit 275 , and a drive unit 279 . The housing part 270 is disposed on the lower side of the chamber 2. The storage unit 270 can accommodate the moving unit 275 and the driving unit 279 . The housing portion 270 is formed in a rectangular parallelepiped box shape. Specifically, the accommodating part 270 is formed by a rectangular plate-shaped first support plate 271, a rectangular plate-shaped second support plate 272 facing the first support plate 271, and the first support plate 271 and the second support plate. The outer periphery of 272 is connected and covered with a cover plate 273 that surrounds the moving part 275 and the driving part 279 . In addition, the cover plate 273 may not be provided. That is, the position adjustment part 207 should just be provided with the 1st support plate 271, the moving part 275, and the drive part 279 at least. For example, an external cover may be provided to cover the entire device.

第一支持板271之外周緣被連接於腔室2之周壁23的下端。第一支持板271也當作腔室2之底板發揮功能。在第一支持板271配置加熱板205。具體而言，加熱板205係在腔室2內被支持於第一支持板271。The outer peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2 . The first support plate 271 also functions as the bottom plate of the chamber 2 . The heating plate 205 is arranged on the first support plate 271 . Specifically, the heating plate 205 is supported by the first support plate 271 in the chamber 2 .

罩板273和周壁23在上下連續連接。腔室2被構成能夠在密閉空間收容基板10。例如，藉由以熔接等無間隙地結合頂板21、作為底板之第一支持板271及周壁23之各連接部，可以提升腔室2內之氣密性。The cover plate 273 and the peripheral wall 23 are continuously connected up and down. The chamber 2 is configured to accommodate the substrate 10 in a closed space. For example, the airtightness in the chamber 2 can be improved by joining the top plate 21 , the first support plate 271 as the bottom plate, and the peripheral wall 23 without any gap by welding or the like.

移動部275具備插銷276、伸縮管277及基台278。 　　插銷276能夠支持基板10之第二面10b並且能夠在第二面10b之法線方向(Z方向)移動。插銷276係在上下延伸之棒狀的構件。插銷276之前端(上端)係能夠抵接於基板10之第二面10b並且能夠與基板10之第二面10b分離。The moving part 275 includes a plug 276 , a telescopic tube 277 , and a base 278 . The plug 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a rod-shaped member extending up and down. The front end (upper end) of the pin 276 can abut against the second surface 10 b of the substrate 10 and can be separated from the second surface 10 b of the substrate 10 .

插銷276在與第二面10b平行之方向(X方向及Y方向)隔著間隔而設置複數。複數插銷276分別被形成略相同的長度。複數插銷276之前端被配置在與第二面10b平行之面內(XY平面內)。The plug pin 276 is provided in plural at intervals in the direction (X direction and Y direction) parallel to the second surface 10b. The plurality of pins 276 are each formed to have approximately the same length. The front ends of the plurality of pins 276 are arranged in a plane parallel to the second surface 10b (in the XY plane).

伸縮管277被設置在第一支持板271和基台278之間。伸縮管277係覆蓋成包圍插銷276之周圍，並且在上下延伸的管狀構件。伸縮管277被設成在第一支持板271和基台278之間上下伸縮自如。例如，伸縮管277係真空蛇腹管。The telescoping tube 277 is provided between the first support plate 271 and the base 278 . The telescopic tube 277 is a tubular member that covers the periphery of the plug 276 and extends up and down. The telescopic tube 277 is provided so as to be able to expand and contract freely up and down between the first support plate 271 and the base 278 . For example, the telescopic tube 277 is a vacuum bellows.

伸縮管277僅以與複數插銷276相同數量設置複數。複數伸縮管277之前端(上端)被固定於第一支持板271。具體而言，在第一支持板271形成有在厚度方向開口第一支持板271之複數插通孔271h。各插通孔271h之內徑被設成與各伸縮管277之外徑略相同的大小。例如，各伸縮管277之前端被嵌合固定於第一支持板271之各插通孔271h。The telescopic tubes 277 are provided in plural in the same number as the plural pins 276 . The front ends (upper ends) of the plurality of telescopic tubes 277 are fixed to the first support plate 271 . Specifically, a plurality of insertion holes 271h opening the first support plate 271 in the thickness direction are formed in the first support plate 271 . The inner diameter of each insertion hole 271h is set to approximately the same size as the outer diameter of each telescopic tube 277 . For example, the front end of each telescopic tube 277 is fitted and fixed to each insertion hole 271h of the first support plate 271 .

基台278係與第一支持板271相向之板狀構件。基台278之上面成為沿著基板10之第二面10b的平坦面。在基台278之上面，固定有複數插銷276之基端(下端)及複數伸縮管277之基端(下端)。The base 278 is a plate-shaped member facing the first support plate 271 . The upper surface of the base 278 is a flat surface along the second surface 10 b of the substrate 10 . On the base 278, base ends (lower ends) of a plurality of bolts 276 and base ends (lower ends) of a plurality of telescopic tubes 277 are fixed.

複數插銷276之前端被設成能夠插通加熱板205。在加熱板205，於在第二面10b之法線方向與第一支持板271之各插通孔271h(各伸縮管277之內部空間)重疊之位置，形成有在第二面10b之法線方向(加熱板205之厚度方向)開口加熱板205的複數插通孔205h。The front ends of the plurality of pins 276 are provided so as to be able to be inserted through the heating plate 205 . In the heating plate 205, the normal line on the second surface 10b is formed at a position overlapping with each insertion hole 271h (inner space of each telescopic tube 277) of the first support plate 271 in the normal line direction of the second surface 10b. The plurality of insertion holes 205h of the heating plate 205 are opened in the direction (thickness direction of the heating plate 205).

複數插銷276之前端被設成能夠插通紅外線反射部230。在紅外線反射部230，於在第二面10b之法線方向與第一支持板271之各插通孔271h(各伸縮管277之內部空間)重疊之位置，形成有在第二面10b之法線方向(紅外線反射板之厚度方向)開口紅外線反射部230的複數插通孔230h。The front ends of the plurality of plugs 276 are provided so as to be able to be inserted through the infrared reflection unit 230 . In the infrared reflection part 230, at the position where the normal line direction of the second surface 10b overlaps with each insertion hole 271h (inner space of each telescopic tube 277) of the first support plate 271, there is a method on the second surface 10b. The plurality of insertion holes 230h of the infrared reflection part 230 are opened in the direction of the line (thickness direction of the infrared reflection plate).

複數插銷276之前端被設成經由各伸縮管277之內部空間、加熱板205之各插通孔205h及紅外線反射部230之各插通孔230h而能夠抵接於基板10之第二面10b。因此，成為藉由複數插銷276之前端，基板10被支持成與XY平面平行。複數插銷276成為邊支持被收容在腔室2內之基板10，邊在腔室2內之Z方向移動(參照圖15～圖17)。The front ends of the plurality of pins 276 are configured to be in contact with the second surface 10b of the substrate 10 through the internal space of each telescopic tube 277, each insertion hole 205h of the heating plate 205, and each insertion hole 230h of the infrared reflection part 230. Therefore, the substrate 10 is supported parallel to the XY plane by the plurality of pins 276 at the front end. The plurality of pins 276 move in the Z direction in the chamber 2 while supporting the substrate 10 accommodated in the chamber 2 (see FIGS. 15 to 17 ).

驅動部279被配置在腔室2之外部亦即收容部270內。因此，假設隨著驅動部279之驅動，產生微粒，藉由將腔室2內設成密封空間，亦可以迴避微粒侵入至腔室2內。The driving unit 279 is disposed outside the chamber 2 , that is, inside the housing unit 270 . Therefore, assuming that particles are generated along with the driving of the driving unit 279 , by setting the inside of the chamber 2 as a sealed space, it is also possible to avoid the intrusion of the particles into the chamber 2 .

＜基板加熱方法＞ 　　接著，說明與本實施型態有關之基板加熱方法。在本實施型態中，使用上述基板加熱裝置201而加熱基板10。在基板加熱裝置201之各部進行的動作藉由控制部15被控制。另外，針對與第一實施型態相同之工程，省略其詳細說明。<Substrate Heating Method> Next, the substrate heating method related to this embodiment will be described. In this embodiment, the substrate 10 is heated using the substrate heating device 201 described above. The operations performed by each part of the substrate heating apparatus 201 are controlled by the control part 15 . In addition, for the same process as that of the first embodiment, the detailed description thereof will be omitted.

圖15為用以說明與第二實施型態有關之基板加熱裝置201之動作之一例的圖示。圖16為接續於圖15的與第二實施型態有關之基板加熱裝置201之動作說明圖。圖17為接續於圖16的與第二實施型態有關之基板加熱裝置201之動作說明圖。Fig. 15 is a diagram for explaining an example of the operation of the substrate heating device 201 related to the second embodiment. FIG. 16 is an explanatory view of the operation of the substrate heating device 201 related to the second embodiment, continued from FIG. 15 . FIG. 17 is an explanatory diagram of the operation of the substrate heating device 201 related to the second embodiment, continued from FIG. 16 .

為了便於說明，在圖15～圖17中，省略基板加熱裝置201之構成要素之中，基板搬出搬入部24、減壓部3、氣體供給部4、氣體擴散部60、溫度檢測部9、壓力檢測部14、氣體液化回收部11、冷卻機構50、加熱單元80、隔熱構件26、蓋構件27及控制部15之圖示。For convenience of description, in FIGS. 15 to 17 , among the constituent elements of the substrate heating apparatus 201, the substrate unloading and loading unit 24, the decompression unit 3, the gas supply unit 4, the gas diffusion unit 60, the temperature detection unit 9, the pressure The diagram of the detection unit 14 , the gas liquefaction recovery unit 11 , the cooling mechanism 50 , the heating unit 80 , the heat insulating member 26 , the cover member 27 and the control unit 15 .

與本實施型態有關之基板加熱方法包含收容工程、減壓工程、基板加熱工程、腔室加熱工程、壓力檢測工程及控制工程。 　　如圖15所示般，在收容工程中將塗佈有聚醯亞胺形成用液之基板10收容在腔室2之內部的收容空間2S。 　　在減壓工程中，減壓收容空間2S之氛圍。The substrate heating method related to this implementation type includes containment engineering, decompression engineering, substrate heating engineering, chamber heating engineering, pressure detection engineering and control engineering. As shown in FIG. 15, in the storage process, the substrate 10 coated with the polyimide forming liquid is stored in the storage space 2S inside the chamber 2. In the decompression project, the atmosphere of the decompression containment space 2S.

在減壓工程中，基板10與加熱板205分離。具體而言，經由各伸縮管277之內部空間、加熱板205之各插通孔205h及紅外線反射部230之各插通孔230h而使複數插銷276之前端抵接於基板10之第二面10b，並且藉由使基板10上升，使基板10與加熱板205分離。在減壓工程中，加熱板205及基板10分離成加熱板205之熱不會傳遞至基板10的程度。在減壓工程中，加熱板205之電源成為導通。另外，在減壓工程中，紅外線加熱器6之電源成為斷開。In the decompression process, the substrate 10 is separated from the heating plate 205 . Specifically, the front ends of the plurality of pins 276 abut against the second surface 10b of the substrate 10 through the internal spaces of the telescopic tubes 277, the insertion holes 205h of the heating plate 205, and the insertion holes 230h of the infrared reflection part 230. , and the substrate 10 is separated from the heating plate 205 by raising the substrate 10 . In the decompression process, the heating plate 205 and the substrate 10 are separated to such an extent that the heat of the heating plate 205 is not transferred to the substrate 10 . During the decompression process, the power supply of the heating plate 205 is turned on. In addition, during the decompression process, the power supply of the infrared heater 6 is turned off.

在減壓工程之後，基板加熱工程中，使用被配置在基板10之一方側的加熱板205和被配置在基板10之另一方側之紅外線加熱器6而加熱基板10。 　　基板加熱工程包含HP加熱工程及IR加熱工程。After the decompression process, in the substrate heating process, the substrate 10 is heated using the heating plate 205 disposed on one side of the substrate 10 and the infrared heater 6 disposed on the other side of the substrate 10 . Substrate heating engineering includes HP heating engineering and IR heating engineering.

在減壓工程之後，在HP加熱工程中，以第一溫度加熱基板10。 　　如圖16所示般，在HP加熱工程中，藉由使複數插銷276之前端與基板10之第二面10b分離，使基板10載置於紅外線反射部230之加熱板側反射面230a。具體而言，使基板10支持於被設置在加熱板側反射面230a之基板支持凸部(無圖示)。依此，因加熱板側反射面230a接近於基板10之第二面10b，故加熱板205之熱經由紅外線反射部230而傳遞至基板10。例如，在HP加熱工程中，紅外線加熱器6之電源維持斷開。After the decompression process, in the HP heating process, the substrate 10 is heated at the first temperature. As shown in FIG. 16, in the HP heating process, the substrate 10 is placed on the heating plate side reflection surface 230a of the infrared reflection part 230 by separating the front ends of the plurality of pins 276 from the second surface 10b of the substrate 10. Specifically, the board|substrate 10 is supported by the board|substrate support convex part (not shown) provided in the reflection surface 230a by the heater board side. Accordingly, since the reflective surface 230 a on the heating plate side is close to the second surface 10 b of the substrate 10 , the heat of the heating plate 205 is transferred to the substrate 10 through the infrared reflective portion 230 . For example, during the HP heating process, the power supply of the infrared heater 6 is kept off.

HP加熱工程之後，在IR加熱工程中，以較第一溫度高之第二溫度加熱基板10。 　　如圖17所示般，在IR加熱工程中，藉由使基板10較HP加熱工程時之位置更上升，使基板10接近於紅外線加熱器6。在IR加熱工程中，紅外線加熱器6之電源成為導通。因在IR加熱工程中，較HP加熱工程時，基板10更接近於紅外線加熱器6，故紅外線加熱器6之熱充分地傳遞至基板10。After the HP heating process, in the IR heating process, the substrate 10 is heated at a second temperature higher than the first temperature. As shown in FIG. 17 , in the IR heating process, the substrate 10 is brought closer to the infrared heater 6 by raising the substrate 10 higher than that in the HP heating process. In the IR heating process, the power supply of the infrared heater 6 is turned on. In the IR heating process, the substrate 10 is closer to the infrared heater 6 than in the HP heating process, so the heat of the infrared heater 6 is sufficiently transferred to the substrate 10 .

之後，藉由經過與第一實施型態相同之工程，進行被塗佈在基板10之聚醯亞胺形成用液之揮發或醯亞胺化，並且進行被塗佈在基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之再配列，可以形成聚醯亞胺膜。 　　再者，從抑制腔室2之收容空間2S中之氣體在腔室2之內面被冷卻而成為昇華物之情形的觀點來看，進行與第一實施型態相同的腔室加熱工程。 　　再者，從使被塗佈在基板10之聚醯亞胺形成用液穩定地硬化之觀點來看，進行與第一實施型態相同之壓力檢測工程及控制工程。After that, by going through the same process as that of the first embodiment, volatilization or imidization of the polyimide forming liquid coated on the substrate 10 is performed, and the polyimide coated on the substrate 10 is performed. The rearrangement of molecular chains during the imidization of the amine forming solution can form a polyimide film. Furthermore, from the viewpoint of preventing the gas in the storage space 2S of the chamber 2 from being cooled inside the chamber 2 to become a sublimation product, the same chamber heating process as that in the first embodiment is performed. Furthermore, from the viewpoint of stably hardening the polyimide forming liquid coated on the substrate 10, the same pressure detection process and control process as those in the first embodiment were performed.

如上述般，若藉由本實施型態時，藉由包含移動部275能夠支持基板10之第二面10b並且能夠在第二面10b之法線方向移動的複數插銷276，複數插銷276之前端被配置在與第二面10b平行之面內，以達到下述效果。因可以在穩定地支持基板10之狀態下，加熱基板10，故可以使被塗佈於基板10之聚醯亞胺形成用液穩定地硬化。As mentioned above, according to this embodiment, by including the plurality of pins 276 capable of supporting the second surface 10b of the substrate 10 and moving in the normal direction of the second surface 10b by the moving part 275, the front ends of the plurality of pins 276 are moved. It is arranged in a plane parallel to the second surface 10b to achieve the following effects. Since the substrate 10 can be heated while the substrate 10 is stably supported, the polyimide forming liquid applied on the substrate 10 can be stably hardened.

再者，在加熱板205，形成在第二面10b之法線方向開口加熱板205之複數插通孔205h，藉由設成各插銷276之前端經由各插通孔205h能夠抵接於第二面10b，以達到下述效果。因可以在短時間進行在複數插銷276和加熱板205之間收授基板10，故可以效率佳地調整基板10之加熱溫度。Furthermore, in the heating plate 205, the plurality of insertion holes 205h that are opened in the heating plate 205 in the normal direction of the second surface 10b are formed so that the front ends of the pins 276 can contact the second surface through the insertion holes 205h. surface 10b to achieve the following effects. Since the substrate 10 can be transferred between the plurality of pins 276 and the heating plate 205 in a short time, the heating temperature of the substrate 10 can be adjusted efficiently.

另外，在上述例表示的各構成構件之諸多形狀或組合等為一例，能夠根據設計要求等做各種變更。 　　例如，在上述實施型態中，雖然基板加熱部具備有被配置在基板之一方側的加熱板，和被配置在基板之另一方側，並且能夠藉由紅外線加熱基板之紅外線加熱器，但是不限定於此。例如，即使基板加熱部僅具備被配置在基板之一方側的加熱板亦可，即使僅具備被配置在基板之另一方側的紅外線加熱器亦可。即是，若基板加熱部被配置在基板之一方側及另一方側之至少一方即可。In addition, the various shapes and combinations of the constituent members shown in the above examples are examples, and various changes can be made according to design requirements and the like. For example, in the above-mentioned embodiment, although the substrate heating unit is provided with a heating plate arranged on one side of the substrate, and an infrared heater arranged on the other side of the substrate and capable of heating the substrate by infrared rays, it does not Limited to this. For example, the substrate heating unit may include only a heating plate arranged on one side of the substrate, or may include only an infrared heater arranged on the other side of the substrate. That is, it is sufficient if the substrate heating unit is disposed on at least one of one side and the other side of the substrate.

再者，在上述實施型態中，雖然腔室加熱部僅被配置在腔室之周壁，但是不限定於此。例如，腔室加熱部除了腔室之周壁之外，即使被配置在腔室之頂板及底板亦可。即是，若腔室加熱部能夠加熱腔室之內面之至少一部分即可。In addition, in the above-mentioned embodiment, although the chamber heating part is arrange|positioned only in the peripheral wall of a chamber, it is not limited to this. For example, the chamber heating unit may be disposed on the ceiling and bottom of the chamber in addition to the peripheral wall of the chamber. That is, it is sufficient if the chamber heating unit can heat at least a part of the inner surface of the chamber.

再者，在上述實施型態中，雖然具備持有反射面之紅外線反射部，但是不限定於此。例如，即使不具備紅外線反射部，加熱板之上面被設成反射紅外線之反射面亦可。In addition, in the said embodiment, although the infrared reflection part which has a reflection surface is provided, it is not limited to this. For example, even if the infrared reflection unit is not provided, the upper surface of the heating plate may be provided as a reflection surface that reflects infrared rays.

再者，在上述實施型態中，雖然基板、加熱板及紅外線加熱器被收容在共同之腔室，但是不限定於此。例如，即使加熱板及紅外線加熱器被收容在彼此不同之腔室亦可。In addition, in the above-mentioned embodiment, although the substrate, the heating plate, and the infrared heater are housed in a common chamber, the present invention is not limited to this. For example, the heating plate and the infrared heater may be housed in different chambers.

再者，在上述實施型態中，雖然加熱板及紅外線加熱器之雙方能夠階段性地加熱基板，但是不限定於此。例如，即使加熱板及紅外線加熱器之至少一方能夠階段性地加熱基板亦可。再者，即使加熱板及紅外線加熱器之雙方能夠僅以一定溫度加熱基板亦可。In addition, in the above-mentioned embodiment, both the heating plate and the infrared heater can heat the board|substrate in stages, but it is not limited to this. For example, at least one of the hot plate and the infrared heater may heat the substrate in stages. In addition, both the hot plate and the infrared heater may heat the substrate at only a certain temperature.

再者，在上述實施型態中，雖然使用複數搬運滾輪作為搬運部，但是不限定於此。例如，作為搬運部即使使用帶式輸送機亦可，即使使用線性馬達致動器亦可。例如，即使帶式輸送機及線性馬達致動器能夠在X方向接續亦可。依此，可以調整在X方向之基板的搬運距離。In addition, in the said embodiment, although the several conveyance roller was used as a conveyance part, it is not limited to this. For example, a belt conveyor or a linear motor actuator may be used as the conveyance unit. For example, a belt conveyor and a linear motor actuator may be connected in the X direction. Accordingly, the transport distance of the substrate in the X direction can be adjusted.

再者，搬運部採用圖5所示之構成(在搬運部形成有通過部之構成)以外之構成的情況，即使加熱板之俯視尺寸等於或大於基板之俯視尺寸亦可。依此，比起加熱板之俯視尺寸小於基板之俯視尺寸之情況，可以更加地提高基板之加熱溫度之面內均勻性。In addition, when the transfer part adopts a configuration other than the configuration shown in FIG. 5 (the transfer part is formed with a passage part), the plan view size of the heating plate may be equal to or larger than the plan view size of the substrate. According to this, compared with the case where the plan view size of the heating plate is smaller than the plan view size of the substrate, the in-plane uniformity of the heating temperature of the substrate can be further improved.

再者，在上述實施型態中，雖然於減壓工程及第一加熱工程中，加熱板之電源成為導通，紅外線加熱器之電源成為斷開，但是不限定於此。例如，在減壓工程及第一加熱工程中，即使加熱板及紅外線加熱器之電源成為導通亦可。In addition, in the above-mentioned embodiment, although the power of the heating plate is turned on and the power of the infrared heater is turned off in the decompression process and the first heating process, the present invention is not limited to this. For example, in the decompression process and the first heating process, the power supply of the heating plate and the infrared heater may be turned on.

再者，在上述第一實施型態中，雖然舉出IR加熱工程包含IR第一加熱工程、IR第二加熱工程及IR第三加熱工程之3個加熱工程之例，但是不限定於此。例如，即使IR加熱工程僅包含IR第一加熱工程及IR第二加熱工程之兩個加熱工程亦可，即使包含4個以上之加熱工程亦可。In addition, in the above-mentioned first embodiment, although an example was given in which the IR heating process includes three heating processes of the IR first heating process, the IR second heating process, and the IR third heating process, it is not limited thereto. For example, the IR heating process may include only two heating processes of the IR first heating process and the IR second heating process, or may include four or more heating processes.

再者，在上述第二實施型態中，雖然複數插銷之前端被設成能夠插通紅外線反射部(即是，在紅外線反射部形成有複數插通孔)，但是不限定於此。例如，即使設為複數插銷之前端無法插通紅外線反射部亦可。即是，即使在紅外線反射部無形成有插通孔亦可。在此情況下，複數插銷之前端被設成能夠經由各伸縮管之內部空間及加熱板之各插通孔，抵接於紅外線反射部之背面。因此，成為藉由複數插銷之前端，紅外線反射部被支持成與XY平面平行。複數插銷邊經由紅外線反射部支持被收容在腔室內之基板，邊在腔室內之Z方向移動。Furthermore, in the above-mentioned second embodiment, although the front ends of the plurality of plugs are provided so as to be able to be inserted into the infrared reflection part (that is, the plurality of insertion holes are formed in the infrared reflection part), the invention is not limited thereto. For example, even if it is set as a plurality of plugs, the front end cannot be inserted through the infrared reflection part. In other words, no insertion hole may be formed in the infrared ray reflecting portion. In this case, the front ends of the plurality of pins are set so as to be able to abut against the back surface of the infrared reflection part through the inner space of each telescopic tube and each insertion hole of the heating plate. Therefore, the infrared reflection part is supported parallel to the XY plane by the front end of the plurality of plugs. The plurality of pins move in the Z direction in the chamber while supporting the substrate accommodated in the chamber via the infrared reflection part.

再者，即使包含上述實施型態之基板加熱裝置之基板處理系統適用本發明亦可。例如，基板處理系統係被組裝於工場等之生產線而使用，在基板之特定區域形成薄膜的系統。雖然無圖示，但是例如基板處理系統具備包含上述基板加熱裝置之基板處理單元，和供給收容有處理前之基板的搬入用卡匣，並且回收空的搬入用卡匣的單元亦即基板搬入單元，和回收收容有處理後之基板的搬出用卡匣，並且供給空的搬出用卡匣的單元亦即基板搬出單元，和在基板處理單元和基板搬入單元之間搬運搬入用卡匣，並且在基板處理單元和基板搬出單元之間搬運搬出用卡匣的搬運單元，和統籌控制各單元的控制單元。 　　若藉由該構成時，藉由包含上述基板加熱裝置，可以在基板處理系統中使朝基板的塗佈物穩定地硬化。Furthermore, the present invention may be applied to a substrate processing system including the substrate heating device of the above embodiment. For example, a substrate processing system is installed in a production line of a factory and used to form a thin film on a specific area of a substrate. Although not shown in the figure, for example, the substrate processing system includes a substrate processing unit including the above-mentioned substrate heating device, and a substrate loading unit that supplies loading cassettes containing unprocessed substrates and collects empty loading cassettes. , and the unit that collects the unloading cassettes containing the processed substrates and supplies empty unloading cassettes, that is, the substrate unloading unit, and transports the loading cassettes between the substrate processing unit and the substrate loading unit, and in A transport unit that transports cassettes for unloading between the substrate processing unit and the substrate unloading unit, and a control unit that collectively controls each unit. With this configuration, by including the above-mentioned substrate heating device, it is possible to stably harden the coating on the substrate in the substrate processing system.

另外，在上述中，實施型態或其變形例記載的各構成要素，可以在不脫離本發明之主旨的範圍下適當組合，再者，亦可以適當地不採用組合後的複數構成要素之中的一部分構成要素。 [實施例]In addition, in the above, each component described in the embodiment or its modifications may be appropriately combined without departing from the gist of the present invention, and furthermore, it may be appropriate not to use any of the combined plurality of components. part of the constituent elements. [Example]

以下，雖然藉由實施例更具體地說明本發明，但是本發明不限定於以下之實施例。Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to a following Example.

本案發明者藉由以下評估確認藉由以腔室內壓力不超過壓力臨界值之方式控制加熱板及紅外線加熱器之輸出及驅動時間而硬化聚醯亞胺膜，可以提升膜特性。The inventors of the present invention confirmed that by controlling the output and driving time of the heating plate and the infrared heater in such a manner that the pressure in the chamber does not exceed the pressure critical value to harden the polyimide film can improve the film characteristics through the following evaluation.

(評估對象) 　　評估對象係使用藉由後述基板加熱裝置對塗佈有聚醯亞胺形成用液之基板進行加熱處理等而形成的聚醯亞胺膜。基板使用旭硝子股份有限公司製造之玻璃基板「AN100」。聚醯亞胺之前驅體的溶液使用市售的聚醯胺酸清漆。聚醯亞胺膜之膜厚為6μm。(Evaluation object) The evaluation object used was a polyimide film formed by heating a substrate coated with a polyimide forming liquid with a substrate heating device described later. As the substrate, a glass substrate "AN100" manufactured by Asahi Glass Co., Ltd. was used. A commercially available polyamide acid varnish was used for the solution of the precursor of polyimide. The film thickness of the polyimide film was 6 μm.

(比較例) 　　比較例之基板加熱裝置使用具備有腔室、減壓部、加熱板及紅外線加熱器。即是，比較例不具備壓力檢測部，和根據壓力檢測部之檢測結果控制加熱板及紅外線加熱器的控制部。(Comparative example) The substrate heating apparatus of the comparative example is equipped with a chamber, a decompression part, a heating plate, and an infrared heater. That is, the comparative example does not include a pressure detection unit and a control unit that controls the heating plate and the infrared heater based on the detection result of the pressure detection unit.

圖18為與比較例有關之基板加熱方法之處理條件的說明圖。在圖18中，橫軸表示時間[min]，左側之縱軸表示基板溫度[℃]，右側之縱軸表示腔室內壓力[Pa]。在圖18中，實線之曲線表示基板溫度，虛線之曲線表示腔室內壓力。FIG. 18 is an explanatory diagram of processing conditions of a substrate heating method related to a comparative example. In FIG. 18 , the horizontal axis represents time [min], the vertical axis on the left represents the substrate temperature [°C], and the vertical axis on the right represents the pressure in the chamber [Pa]. In FIG. 18, the curve of the solid line represents the substrate temperature, and the curve of the dotted line represents the pressure in the chamber.

如圖18所示般，比較例之情況，依序進行減壓工程T1、HP加熱工程T2、IR加熱工程T3及冷卻工程T4。 　　在減壓工程T1中，使腔室內壓力從大氣壓下降至20Pa。將減壓工程T1之處理時間設成1min。 　　接著，在HP加熱工程T2中，使基板溫度上升至130℃。將HP加熱工程T2之處理時間設成2min。 　　接著，在IR加熱工程T3中，使基板溫度上升至500℃。將IR加熱工程T3之處理時間設成8min。 　　接著，在冷卻工程T4中，將基板冷卻至基板溫度成為250℃以下。再者，在冷卻工程T4中，對收容空間供給氮(N2 沖洗)。將冷卻工程T4之處理時間設成2min。 　　藉由上述工程，進行被塗佈在基板之聚醯亞胺形成用液之醯亞胺化時之分子鏈之再配列，形成聚醯亞胺膜。 　　在比較例中，形成聚醯亞胺膜為止的處理時間為13min。As shown in Fig. 18, in the case of the comparative example, the decompression process T1, the HP heating process T2, the IR heating process T3, and the cooling process T4 were performed sequentially. In the decompression process T1, the pressure in the chamber was lowered from atmospheric pressure to 20 Pa. Set the processing time of the decompression project T1 to 1 min. Next, in the HP heating process T2, the substrate temperature was raised to 130°C. Set the processing time of HP heating process T2 to 2 minutes. Next, in the IR heating step T3, the substrate temperature was raised to 500°C. Set the processing time of IR heating process T3 to 8 minutes. Next, in the cooling process T4, the substrate is cooled until the substrate temperature becomes 250° C. or lower. Furthermore, in the cooling process T4, nitrogen is supplied to the storage space (N 2 flushing). Set the processing time of cooling project T4 to 2 minutes. Through the above process, molecular chain rearrangement at the time of imidization of the polyimide forming liquid coated on the substrate proceeds, and a polyimide film is formed. In the comparative example, the processing time until the polyimide film was formed was 13 minutes.

(實施例) 　　實施例之基板加熱裝置使用除了腔室、減壓部、加熱板及紅外線加熱器之外，具備有壓力檢測部，和根據壓力檢測部之檢測結果而控制加熱板及紅外線加熱器之控制部者(圖1所示之基板加熱裝置1)。(Example) In addition to the chamber, the decompression section, the heating plate and the infrared heater, the substrate heating device of the embodiment is equipped with a pressure detection unit, and controls the heating plate and the infrared heater according to the detection result of the pressure detection unit. The control part (substrate heating device 1 shown in Figure 1).

圖19為與實施例有關之基板加熱方法之處理條件的說明圖。在圖19中，橫軸表示時間[min]，左側之縱軸表示基板溫度[℃]，右側之縱軸表示腔室內壓力[Pa]。在圖19中，實線之曲線表示基板溫度，虛線之曲線表示腔室內壓力。 　　另外，在實施例中，腔室之容積設定成600mm× 550mm×250mm之尺寸。再者，基板使用370mm×470mm之尺寸且厚度0.5mm之玻璃基板。Fig. 19 is an explanatory diagram of processing conditions of the substrate heating method related to the embodiment. In FIG. 19 , the horizontal axis represents time [min], the vertical axis on the left represents the substrate temperature [°C], and the vertical axis on the right represents the pressure in the chamber [Pa]. In FIG. 19, the curve of the solid line represents the substrate temperature, and the curve of the dotted line represents the pressure in the chamber. In addition, in the embodiment, the volume of the chamber is set to a size of 600mm×550mm×250mm. In addition, as a substrate, a glass substrate having a size of 370 mm×470 mm and a thickness of 0.5 mm was used.

如圖19所示般，實施例之情況，依序進行減壓工程T1、HP加熱工程T2、IR加熱工程T3及冷卻工程T4。在實施例中，IR加熱工程T3依序進行IR第一加熱工程T31、IR第二加熱工程T32。 　　在減壓工程T1中，使腔室內壓力從大氣壓下降至20Pa。將減壓工程T1之處理時間設成1min。 　　接著，在HP加熱工程T2中，使基板溫度上升至130℃。將HP加熱工程T2之處理時間設成3min。 　　接著，在IR第一加熱工程T31中，使基板溫度上升至180℃。將IR第一加熱工程T31之處理時間設成4min。 　　接著，在IR第二加熱工程T32中，使基板溫度上升至500℃。將IR第二加熱工程T32之處理時間設成6min。 　　接著，在冷卻工程T4中，將基板冷卻至基板溫度成為250℃以下。再者，在冷卻工程T4中，對收容空間供給氮(N2 沖洗)。將冷卻工程T4之處理時間設成2min。 　　藉由上述工程，進行被塗佈在基板之聚醯亞胺形成用液之醯亞胺化時之分子鏈之再配列，形成聚醯亞胺膜。 　　在實施例中，形成聚醯亞胺膜為止的處理時間為16min。As shown in FIG. 19, in the case of the embodiment, the decompression process T1, the HP heating process T2, the IR heating process T3, and the cooling process T4 are sequentially performed. In the embodiment, the IR heating process T3 is followed by the first IR heating process T31 and the IR second heating process T32. In the decompression process T1, the pressure in the chamber was lowered from atmospheric pressure to 20 Pa. Set the processing time of the decompression project T1 to 1 min. Next, in the HP heating process T2, the substrate temperature was raised to 130°C. Set the processing time of HP heating process T2 to 3 minutes. Next, in the first IR heating process T31, the substrate temperature was raised to 180°C. Set the processing time of the first IR heating process T31 to 4 minutes. Next, in the IR second heating step T32, the substrate temperature was raised to 500°C. Set the processing time of the IR second heating process T32 to 6 minutes. Next, in the cooling process T4, the substrate is cooled until the substrate temperature becomes 250° C. or lower. Furthermore, in the cooling process T4, nitrogen is supplied to the storage space (N 2 flushing). Set the processing time of cooling project T4 to 2 minutes. Through the above process, molecular chain rearrangement at the time of imidization of the polyimide forming liquid coated on the substrate proceeds, and a polyimide film is formed. In an example, the processing time until the polyimide film was formed was 16 minutes.

在實施例中，時常檢測腔室內壓力。在實施例中，根據事前算出資訊，和腔室內壓力的檢測結果，以腔室內壓力不超過壓力臨界值之方式，控制加熱板5及紅外線加熱器6之輸出及驅動時間。壓力臨界值設定成腔室內壓力之變動量Dp不超過10Pa。在實施例中，以腔室內壓力之變動量Dp不超過10Pa之方式，控制加熱板5及紅外線加熱器6之輸出及驅動時間。在實施例中，對比較例，增長HP加熱工程T2之處理時間，並且在IR第一加熱工程及IR第二加熱工程之兩階段進行IR加熱工程。In an embodiment, the pressure in the chamber is monitored from time to time. In the embodiment, the output and driving time of the heating plate 5 and the infrared heater 6 are controlled in such a way that the pressure in the chamber does not exceed the pressure threshold based on the pre-calculated information and the detection result of the pressure in the chamber. The pressure critical value is set such that the variation Dp of the pressure in the chamber does not exceed 10Pa. In the embodiment, the output and driving time of the heating plate 5 and the infrared heater 6 are controlled so that the fluctuation amount Dp of the pressure in the chamber does not exceed 10 Pa. In the embodiment, compared with the comparative example, the processing time of the HP heating process T2 is increased, and the IR heating process is performed in two stages of the IR first heating process and the IR second heating process.

(膜特性之評估結果) 　　在表1表示藉由上述比較例及實施例所形成之聚醯亞胺膜之機械性特性等之膜特性的評估結果。另外，斷裂強度、斷裂延伸性、彈性率使用ORIRNTEC公司製造的「RTC-1210A」而進行測量。翹曲使用基恩斯(KEYENCE)公司製造的「LK-G35」進行測量。熱膨脹率使用精工電子奈米科技有限公司(SII NanoTechnology Inc.)製造的「TMA/SS7100」進行測量。(Evaluation results of film properties) Table 1 shows the evaluation results of film properties such as mechanical properties of the polyimide films formed in the above comparative examples and examples. In addition, the breaking strength, breaking elongation, and modulus of elasticity were measured using "RTC-1210A" manufactured by ORIRNTEC Corporation. Warpage was measured using "LK-G35" manufactured by KEYENCE. The coefficient of thermal expansion was measured using "TMA/SS7100" manufactured by SII NanoTechnology Inc. (SII NanoTechnology Inc.).

【表1】

Figure 107119608-A0304-0001
【Table 1】
Figure 107119608-A0304-0001

如表1所示般，取得比較例和實施例之間不同的結果。 　　實施例相對於比較例，取得翹曲、熱膨脹率良好的結果。 　　依據上述，可知藉由以腔室內壓力不超過壓力臨界值之方式控制加熱板及紅外線加熱器之輸出及驅動時間而硬化聚醯亞胺膜，可以提升膜特性。As shown in Table 1, different results were obtained between Comparative Examples and Examples. Compared with the comparative examples, the examples obtained good results in terms of warpage and thermal expansion coefficient. Based on the above, it can be seen that by controlling the output and driving time of the heating plate and infrared heater in such a way that the pressure in the chamber does not exceed the pressure critical value to harden the polyimide film, the film characteristics can be improved.

1、201‧‧‧基板加熱裝置2‧‧‧腔室2a‧‧‧腔室側反射面2S‧‧‧收容空間3‧‧‧減壓部5、205‧‧‧加熱板(基板加熱部)5a‧‧‧載置面6‧‧‧紅外線加熱器(基板加熱部)7、207‧‧‧位置調整部7a、275‧‧‧移動部8‧‧‧搬運部8h‧‧‧通過部9‧‧‧溫度檢測部10‧‧‧基板10a‧‧‧第一面10b‧‧‧第二面14‧‧‧壓力檢測部15‧‧‧控制部30、230‧‧‧紅外線反射部30a、230a‧‧‧加熱板側反射面205h‧‧‧插通孔276‧‧‧插銷1. 201‧‧‧substrate heating device 2‧‧‧chamber 2a‧‧‧chamber side reflection surface 2S‧‧‧accommodating space 3‧‧‧decompression part 5, 205‧‧‧heating plate (substrate heating part) 5a‧‧‧placement surface 6‧‧‧infrared heater (substrate heating part) 7, 207‧‧‧position adjustment part 7a, 275‧‧‧moving part 8‧‧‧transporting part 8h‧‧‧passing part 9‧ ‧‧Temperature detection unit 10‧‧‧Substrate 10a‧‧First surface 10b‧‧Second surface 14‧‧Pressure detection unit 15‧‧Control unit 30, 230‧‧Infrared reflection unit 30a, 230a‧ ‧‧Heating plate side reflection surface 205h‧‧‧Through hole 276‧‧‧Pin

圖1為與第一實施型態有關之基板加熱裝置之斜視圖。 　　圖2為包含在與第一實施型態有關之基板加熱裝置之加熱單元、隔熱構件及蓋構件之剖面的圖示。 　　圖3為表示加熱板及其周邊構造的側面圖。 　　圖4為加熱板之上視圖。 　　圖5為用以說明搬運滾輪、基板及加熱板之配置關係的圖示。 　　圖6為紅外線反射部之上視圖。 　　圖7為表示加熱板和紅外線反射部之裝卸構造的斜視圖。 　　圖8為在圖3中拆下紅外線反射部之狀態的側視圖。 　　圖9為表示冷卻機構的上視圖。 　　圖10為用以說明在加熱板之加熱控制之一例的圖示。 　　圖11為用以說明與第一實施型態有關之基板加熱裝置之動作之一例的圖示。 　　圖12為接續於圖11的與第一實施型態有關之基板加熱裝置之動作說明圖。 　　圖13為接續於圖12的與第一實施型態有關之基板加熱裝置之動作說明圖。 　　圖14為包含在與第二實施型態有關之基板加熱裝置之加熱單元、隔熱構件及蓋構件之剖面的圖示。 　　圖15為用以說明與第二實施型態有關之基板加熱裝置之動作之一例的圖示。 　　圖16為接續於圖15的與第二實施型態有關之基板加熱裝置之動作說明圖。 　　圖17為接續於圖16的與第二實施型態有關之基板加熱裝置之動作說明圖。 　　圖18為與比較例有關之基板加熱方法之處理條件的說明圖。 　　圖19為與實施例有關之基板加熱方法之處理條件的說明圖。Fig. 1 is a perspective view of a substrate heating device related to a first embodiment. Fig. 2 is a cross-sectional diagram of a heating unit, a heat insulating member, and a cover member included in the substrate heating apparatus related to the first embodiment. Fig. 3 is a side view showing the heating plate and its surrounding structure. Figure 4 is the top view of the heating plate. Fig. 5 is a diagram for explaining the arrangement relationship among the conveying rollers, the substrate and the heating plate. Figure 6 is a top view of the infrared reflector. Fig. 7 is a perspective view showing the attachment and detachment structure of the heating plate and the infrared reflector. Fig. 8 is a side view of the state in which the infrared reflection part is removed in Fig. 3 . Figure 9 is a top view showing the cooling mechanism. Fig. 10 is a diagram for explaining an example of heating control on a heating plate. Fig. 11 is a diagram for explaining an example of the operation of the substrate heating device related to the first embodiment. Fig. 12 is an explanatory view of the operation of the substrate heating device related to the first embodiment, continued from Fig. 11. Fig. 13 is an explanatory diagram of the operation of the substrate heating device related to the first embodiment, continued from Fig. 12. Fig. 14 is a cross-sectional view of a heating unit, a heat insulating member, and a cover member included in a substrate heating apparatus related to a second embodiment. Fig. 15 is a diagram for explaining an example of the operation of the substrate heating device related to the second embodiment. Fig. 16 is an explanatory diagram of the operation of the substrate heating device related to the second embodiment following Fig. 15 . Fig. 17 is an explanatory diagram of the operation of the substrate heating device related to the second embodiment, continued from Fig. 16. Fig. 18 is an explanatory diagram of the processing conditions of the substrate heating method related to the comparative example. Fig. 19 is an explanatory diagram of the processing conditions of the substrate heating method related to the embodiment.

Claims (20)

一種基板加熱裝置，其包含：腔室，其係在內部形成能夠收容基板之收容空間；減壓部，其係能夠減壓上述收容空間之氛圍；基板加熱部，其係被配置在上述基板之一方面側及另一方面側之至少一方，並且能夠加熱上述基板；壓力檢測部，其係能夠檢測上述收容空間之壓力；及控制部，其係根據上述壓力檢測部之檢測結果，控制上述基板加熱部，上述控制部係根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力檢測部之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，控制上述基板加熱部之輸出及驅動時間之至少一方。 A substrate heating device, comprising: a chamber, which forms a storage space capable of accommodating a substrate; a decompression unit, which can decompress the atmosphere of the storage space; a substrate heating unit, which is arranged between the substrates At least one of the one side and the other side, capable of heating the substrate; a pressure detection unit capable of detecting the pressure of the storage space; and a control unit, which controls the substrate based on the detection result of the pressure detection unit In the heating unit, the control unit calculates the pressure of the storage space according to the relationship between the pressure of the storage space, the temperature of the substrate, and the heating time of the substrate, and the detection result of the pressure detection unit. At least one of the output and driving time of the above-mentioned substrate heating unit is controlled in such a manner that the pressure threshold value is exceeded. 如請求項1所載之基板加熱裝置，其中上述基板加熱部包含：加熱板，其係被配置在上述基板之一方面側；和紅外線加熱器，其係被配置在上述基板之另一方面側，並且能夠藉由紅外線加熱上述基板。 The substrate heating device according to claim 1, wherein the substrate heating unit includes: a heating plate disposed on one side of the substrate; and an infrared heater disposed on the other side of the substrate , and the substrate can be heated by infrared rays. 如請求項2所載之基板加熱裝置，其中上述控制部係根據與事先算出的上述收容空間之壓力 和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力檢測部之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，切換上述加熱板及上述紅外線加熱器之至少一方的驅動。 The substrate heating device as set forth in claim 2, wherein the control unit is based on the pre-calculated pressure of the storage space Information related to the relationship between the temperature of the substrate and the heating time of the substrate, and the detection result of the pressure detection unit, switch between the heating plate and the infrared heater in such a way that the pressure in the storage space does not exceed the critical pressure value Driven by at least one side. 如請求項2或3所載之基板加熱裝置，其中上述腔室內面之至少一部分被設成反射上述紅外線之腔室側反射面。 The substrate heating device according to claim 2 or 3, wherein at least a part of the inner surface of the chamber is provided as a chamber-side reflective surface that reflects the infrared rays. 如請求項2或3所載之基板加熱裝置，其中上述加熱板能夠在20℃以上且300℃以下之範圍加熱上述基板，上述紅外線加熱板能夠在200℃以上且600℃以下之範圍加熱上述基板。 The substrate heating device according to claim 2 or 3, wherein the heating plate can heat the substrate in the range of 20°C to 300°C, and the infrared heating plate can heat the substrate in the range of 200°C to 600°C . 如請求項2或3所載之基板加熱裝置，其中進一步包含紅外線反射部，其係被配置在上述加熱板和上述紅外線加熱器之間，並且具有反射朝向上述加熱板之上述紅外線的加熱板側反射面，上述加熱板包含能夠載置上述紅外線反射部之載置面。 The substrate heating device according to claim 2 or 3, further comprising an infrared reflection unit disposed between the heating plate and the infrared heater, and having a heating plate side that reflects the infrared rays directed toward the heating plate In the reflective surface, the heating plate includes a mounting surface on which the infrared reflective part can be mounted. 如請求項2或3所載之基板加熱裝置，其中僅在上述基板之第一面塗佈被處理物， 上述加熱板被配置在與上述基板之第一面相反側之第二面之側。 The substrate heating device as set forth in claim 2 or 3, wherein the object to be processed is coated only on the first surface of the substrate, The heating plate is arranged on the side of the second surface opposite to the first surface of the substrate. 如請求項2或3所載之基板加熱裝置，其中上述加熱板及上述紅外線加熱器之至少一方能夠階段性地加熱上述基板。 The substrate heating device according to claim 2 or 3, wherein at least one of the heating plate and the infrared heater can heat the substrate in stages. 如請求項2或3所載之基板加熱裝置，其中進一步包含能夠調整上述加熱板及上述紅外線加熱器之至少一方和上述基板的相對位置的位置調整部。 The substrate heating device according to claim 2 or 3, further comprising a position adjustment unit capable of adjusting the relative position of at least one of the heating plate and the infrared heater and the substrate. 如請求項9所載之基板加熱裝置，其中上述位置調整部進一步包含設成能夠使上述基板在上述加熱板和上述紅外線加熱器之間移動的移動部。 The substrate heating apparatus according to claim 9, wherein the position adjustment unit further includes a moving unit configured to move the substrate between the heating plate and the infrared heater. 如請求項10所載之基板加熱裝置，其中在上述加熱板和上述紅外線加熱器之間，設置有設成能夠搬運上述基板的搬運部，在上述搬運部形成有能夠使上述移動部通過的通過部。 The substrate heating device as set forth in claim 10, wherein a conveyance section capable of conveying the substrate is provided between the heating plate and the infrared heater, and a passage through which the moving section can pass is formed in the conveyance section. department. 如請求項10所載之基板加熱裝置，其中上述移動部包含能夠支持與上述基板之第一面相反側之第二面，且能夠在上述第二面之法線方向移動的複數插 銷，上述複數插銷之前端被配置在與上述第二面平行之面內。 The substrate heating device according to claim 10, wherein the moving part includes a plurality of inserts capable of supporting the second surface opposite to the first surface of the substrate and capable of moving in the normal direction of the second surface. For the pins, the front ends of the plurality of plug pins are arranged in a plane parallel to the second plane. 如請求項12所載之基板加熱裝置，其中在上述加熱板形成有在上述第二面之法線方向開口上述加熱板的複數插通孔，上述複數插銷之前端能夠經由上述複數插通孔而抵接於上述第二面。 The substrate heating device according to claim 12, wherein a plurality of insertion holes opening the heating plate in the normal direction of the second surface are formed on the heating plate, and the front ends of the plurality of pins can pass through the plurality of insertion holes. abut against the above second surface. 如請求項1至3中之任一項所載之基板加熱裝置，其中進一步包含能夠檢測上述基板之溫度的溫度檢測部。 The substrate heating device according to any one of claims 1 to 3, further comprising a temperature detection unit capable of detecting the temperature of the substrate. 如請求項1至3中之任一項所載之基板加熱裝置，其中上述基板及上述基板加熱部被收容在共同的上述腔室。 The substrate heating device according to any one of claims 1 to 3, wherein the substrate and the substrate heating unit are housed in the common chamber. 一種基板處理系統，其包含請求項1至15中之任一項所載之基板加熱裝置。 A substrate processing system, comprising the substrate heating device described in any one of claims 1 to 15. 一種基板加熱方法，其包含：收容工程，其係將基板收容在腔室內部之收容空間；減壓工程，其係減壓上述收容空間之氛圍；基板加熱工程，其係使用被配置在上述基板之一方面 側及另一方面側之至少一方的基板加熱部而加熱上述基板；壓力檢測工程，其係檢測上述收容空間之壓力；及控制工程，其係根據上述壓力之檢測結果，控制上述基板加熱部，在上述控制工程中，根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，控制上述基板加熱部之輸出及驅動時間之至少一方。 A substrate heating method, which includes: a storage process, which is to store the substrate in the storage space inside the chamber; a decompression process, which is to reduce the atmosphere of the above-mentioned storage space; a substrate heating process, which is to use the substrate arranged on the above-mentioned one aspect The substrate heating part on at least one of the side and the other side heats the above-mentioned substrate; the pressure detection process is to detect the pressure of the above-mentioned storage space; and the control process is to control the above-mentioned substrate heating part according to the detection result of the above-mentioned pressure, In the above-mentioned control process, based on the information related to the relationship between the pressure of the above-mentioned storage space calculated in advance, the temperature of the above-mentioned substrate, and the heating time of the above-mentioned substrate, and the detection results of the above-mentioned pressure, it is determined that the pressure of the above-mentioned storage space does not exceed the critical pressure At least one of the output and the driving time of the above-mentioned substrate heating unit is controlled in a manner of controlling the value. 如請求項17所載之基板加熱方法，其中上述基板加熱部包含：加熱板，其係被配置在上述基板之一方面側；和紅外線加熱器，其係被配置在上述基板之另一方面側，並且能夠藉由紅外線加熱上述基板，在上述控制工程中，根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，切換上述加熱板及上述紅外線加熱器之至少一方的驅動。 The substrate heating method as set forth in claim 17, wherein the substrate heating unit includes: a heating plate disposed on one side of the substrate; and an infrared heater disposed on the other side of the substrate , and can heat the above-mentioned substrate by infrared rays, in the above-mentioned control process, according to the information related to the relationship between the pressure of the above-mentioned accommodation space calculated in advance, the temperature of the above-mentioned substrate, and the heating time of the above-mentioned substrate, and the detection result of the above-mentioned pressure, The drive of at least one of the heating plate and the infrared heater is switched so that the pressure in the storage space does not exceed a pressure threshold. 一種基板加熱裝置，其包含：腔室，其係在內部形成能夠收容基板之收容空間； 減壓部，其係能夠減壓上述收容空間之氛圍；基板加熱部，其係被配置在上述基板之一方面側及另一方面側之至少一方，並且能夠加熱上述基板；壓力檢測部，其係能夠檢測上述收容空間之壓力；及控制部，其係根據上述壓力檢測部之檢測結果，控制上述基板加熱部，上述基板加熱部包含：加熱板，其係被配置在上述基板之一方面側；和紅外線加熱器，其係被配置在上述基板之另一方面側，並且能夠藉由紅外線加熱上述基板，進一步包含紅外線反射部，其係被配置在上述加熱板和上述紅外線加熱器之間，並且具有反射朝向上述加熱板之上述紅外線的加熱板側反射面，上述加熱板包含能夠載置上述紅外線反射部之載置面，上述控制部係根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力檢測部之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，控制上述基板加熱部之輸出及驅動時間之至少一方。 A substrate heating device, which includes: a chamber, which forms a storage space capable of accommodating substrates inside; A decompression unit capable of decompressing the atmosphere of the storage space; a substrate heating unit disposed on at least one of the one side and the other side of the substrate and capable of heating the substrate; a pressure detection unit capable of heating the substrate. It is capable of detecting the pressure of the storage space; and a control unit that controls the substrate heating unit based on the detection result of the pressure detection unit, and the substrate heating unit includes: a heating plate disposed on one side of the substrate and an infrared heater disposed on the other side of the substrate and capable of heating the substrate by infrared rays, further comprising an infrared reflection portion disposed between the heating plate and the infrared heater, In addition, it has a heating plate side reflective surface that reflects the infrared rays directed toward the heating plate. The heating plate includes a mounting surface on which the infrared reflecting part can be placed. Information about the relationship between the temperature of the substrate and the heating time of the substrate, and the detection result of the pressure detection unit, and at least one of the output of the substrate heating unit and the driving time is controlled in such a way that the pressure of the storage space does not exceed the critical pressure value. . 一種基板加熱方法，其包含：收容工程，其係將基板收容在腔室內部之收容空間；減壓工程，其係減壓上述收容空間之氛圍； 基板加熱工程，其係使用被配置在上述基板之一方面側及另一方面側之至少一方的基板加熱部而加熱上述基板；壓力檢測工程，其係檢測上述收容空間之壓力；及控制工程，其係根據上述壓力之檢測結果，控制上述基板加熱部，上述基板加熱部包含：加熱板，其係被配置在上述基板之一方面側；和紅外線加熱器，其係被配置在上述基板之另一方面側，並且能夠藉由紅外線加熱上述基板，在上述控制工程中，根據與事先算出的上述收容空間之壓力和上述基板之溫度和上述基板之加熱時間的關係有關的資訊，和上述壓力之檢測結果，以上述收容空間之壓力不超過壓力臨界值之方式，切換上述加熱板及上述紅外線加熱器之至少一方的驅動。 A substrate heating method, which includes: a storage process, which is to store the substrate in the storage space inside the chamber; a decompression process, which is to reduce the atmosphere of the above-mentioned storage space; A substrate heating process for heating the substrate using a substrate heating unit disposed on at least one of the one side and the other side of the substrate; a pressure detection process for detecting the pressure of the storage space; and a control process, It controls the substrate heating unit according to the detection result of the pressure, and the substrate heating unit includes: a heating plate disposed on one side of the substrate; and an infrared heater disposed on the other side of the substrate. On the one hand, the substrate can be heated by infrared rays. In the control process, the relationship between the pressure of the storage space, the temperature of the substrate, and the heating time of the substrate has been calculated in advance, and the relationship between the pressure As a result of detection, the drive of at least one of the heating plate and the infrared heater is switched so that the pressure in the storage space does not exceed a pressure threshold.
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