TWI786526B - Ultra-thin vapor chamber device with two phase unidirectional flow - Google Patents
Ultra-thin vapor chamber device with two phase unidirectional flow Download PDFInfo
- Publication number
- TWI786526B TWI786526B TW110102491A TW110102491A TWI786526B TW I786526 B TWI786526 B TW I786526B TW 110102491 A TW110102491 A TW 110102491A TW 110102491 A TW110102491 A TW 110102491A TW I786526 B TWI786526 B TW I786526B
- Authority
- TW
- Taiwan
- Prior art keywords
- capillary structure
- area
- ultra
- vapor chamber
- section
- Prior art date
Links
Images
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
本發明係關於一種新式的薄型均溫板元件,尤其是指一種與一般工作流體具有雙相逆向流之薄型均溫板元件不同,而是其工作流體具有雙相單向流功能的一種超薄型較大尺寸之均溫板元件。 The present invention relates to a new type of thin vapor chamber element, in particular to an ultra-thin vapor chamber element whose working fluid has the function of two-phase unidirectional flow, which is different from the general working fluid with two-phase reverse flow. Vapor chamber elements of larger size.
習知微處理器是電子及通訊產品的核心元件,在高速運算下容易產生熱而成為電子裝置的主要發熱元件。如果沒能即時將熱散去,將產生局部性的熱點。倘若沒有良好熱管理方案及散熱系統,往往造成微處理器過熱而無法發揮出應有的功能,甚至影響到整個電子裝置系統的壽命及可靠度。目前,電子及通訊產品處理熱點的解熱及導熱的有效方式,是將均溫板的吸熱端接觸該電子裝置之微處理器。微處理器所產生的高熱被傳導並分佈至機殼,將熱輻射至空氣中。 It is known that the microprocessor is the core component of electronic and communication products, and it tends to generate heat under high-speed operation and becomes the main heating element of electronic devices. If the heat is not dissipated immediately, localized hot spots will be generated. If there is no good thermal management solution and heat dissipation system, it will often cause the microprocessor to overheat and fail to perform its due function, and even affect the life and reliability of the entire electronic device system. Currently, an effective way for electronic and communication products to dissipate and conduct heat from hot spots is to contact the heat absorbing end of the chamber with the microprocessor of the electronic device. The high heat generated by the microprocessor is conducted and distributed to the case, radiating the heat into the air.
均溫板元件是一種扁平狀之真空密閉腔體。密閉腔體內壁上鋪設有毛細結構並容置有工作流體。均溫板之工作原理係當均溫板吸熱區與熱源接觸時,在吸熱區毛細結構中的液相工作流體吸收熱能,從液相轉變為氣相。由於元件內壓力差,氣相工作流體藉由腔體中的氣道向遠端冷凝區快速流動。當氣相工作流體流至遠離熱源之冷凝區時釋放潛熱,從氣 相工作流體轉變為液相工作流體而進入毛細結構中。接著,液相工作流體藉由腔體中連續性毛細結構之毛細力,輸送回流至吸熱區,形成液氣相之流動循環。均溫板元件藉由上述之工作流體的相變及循環達到快速傳導熱能之目的,並使微處理器降溫及散熱。此種工作流體的雙相逆向流循環模式在元件厚度大於0.3mm且元件內部容置空間及氣道較為充足的一般型均溫板元件,可以運作得很好。 The vapor chamber element is a flat vacuum-tight cavity. A capillary structure is laid on the inner wall of the airtight cavity and accommodates working fluid. The working principle of the vapor chamber is that when the heat absorption area of the heat absorption area is in contact with the heat source, the liquid-phase working fluid in the capillary structure of the heat absorption area absorbs heat energy and changes from liquid phase to gas phase. Due to the pressure difference inside the element, the working fluid in the gas phase quickly flows to the remote condensation area through the air channel in the cavity. When the working fluid in the gas phase flows to the condensation area far away from the heat source, the latent heat is released, from the gas Phase working fluid is transformed into liquid phase working fluid into the capillary structure. Then, the liquid-phase working fluid is transported back to the heat-absorbing area by the capillary force of the continuous capillary structure in the cavity, forming a flow cycle of the liquid-gas phase. The vapor chamber component achieves the purpose of rapidly conducting heat energy through the above-mentioned phase change and circulation of the working fluid, and cools down and dissipates heat from the microprocessor. The two-phase reverse flow circulation mode of the working fluid can work very well on general-type vapor chamber elements with element thickness greater than 0.3mm and sufficient internal accommodation space and air passages.
隨著5G移動通訊設備的普及,追求產品輕薄之設計已成為一種趨勢,對於均溫板元件的厚度要求亦趨嚴格。一般元件厚度小於1mm通稱為超薄均溫板,而目前市場上能夠量產的超薄均溫板元件厚度都在0.3mm以上。一旦元件厚度低於0.3mm,尺寸長度超過60mm,且元件面積大於2000mm2後,由於元件內部容置空間狹窄,大大限制了毛細結構厚度,也壓縮了由吸熱區通往遠端冷凝區的氣道空間。 With the popularization of 5G mobile communication equipment, the pursuit of thin and light product design has become a trend, and the thickness requirements for vapor chamber components are also becoming stricter. Generally, components with a thickness of less than 1mm are called ultra-thin vapor chambers, and the thickness of ultra-thin vapor chambers that can be mass-produced in the market is all above 0.3mm. Once the element thickness is less than 0.3mm, the dimension length exceeds 60mm, and the element area is greater than 2000mm2 , the capillary structure thickness is greatly limited due to the narrow internal accommodation space of the element, which also compresses the air passage from the heat absorption area to the remote condensation area space.
超薄均溫板的設計在結構上一般為平均地在其腔體內表面鋪置並形成毛細結構,讓液相工作流體依賴毛細結構之毛細力來輸送。同時在毛細結構的上方留有一定間隙空間讓氣相工作流體在其間流動。當均溫板元件厚度小於1mm時,由於內部容置空間有限,毛細結構的厚度要求亦相對的要薄,因此毛細結構的舖置成型就很難用燒結金屬粉末的工藝來製作。舖置銅網或泡沫銅片成為製作毛細結構的主流方式。但是,一旦超薄均溫板元件厚度小於0.3mm時,毛細結構的厚度設計僅僅能有幾十微米,舖置銅網或泡沫銅片來製作毛細結構亦面臨了製作工藝上的瓶頸。因此,印刷漿料燒結微細粉末形成超薄毛細厚度的多孔隙毛細結構,成了新的工藝選擇。 The design of the ultra-thin vapor chamber is generally laid evenly on the inner surface of the cavity and forms a capillary structure, so that the liquid-phase working fluid depends on the capillary force of the capillary structure to be transported. At the same time, a certain gap space is reserved above the capillary structure to allow the gas-phase working fluid to flow therebetween. When the thickness of the vapor chamber element is less than 1mm, due to the limited internal accommodation space, the thickness of the capillary structure is required to be relatively thin, so it is difficult to make the laying and forming of the capillary structure by the process of sintering metal powder. Laying copper mesh or foamed copper sheets has become the mainstream way to make capillary structures. However, once the thickness of the ultra-thin vapor chamber is less than 0.3mm, the capillary structure can only be designed to have a thickness of tens of microns, and laying copper mesh or foamed copper sheets to make the capillary structure also faces a bottleneck in the manufacturing process. Therefore, printing paste sinters fine powder to form a porous capillary structure with ultra-thin capillary thickness, which has become a new process choice.
一般超薄均溫板內之工作流體循環為雙相逆向流,也就是液相工作流體在毛細結構內流動的方向與氣相工作流體在氣道空間內的流動方向是相反的。氣相工作流體由吸熱區流向冷凝區,液相工作流體則由冷凝區逆向流回吸熱區以完成循環,兩者流動方向恰好相反。隨著氣道空間的變窄、氣道長度的變長、氣體與毛細結構表面的液相流產生的逆向摩擦力增大,均溫板的攜帶極限值就變得更小,液相工作流體回流吸熱區的量將會受到攜帶極限的限制。另外,氣相工作流體因為摩擦力增大,而提前冷凝成液相工作流體而進入毛細結構,又逆向回流至吸熱區,導致吸熱區的熱量較難傳導至遠離吸熱區的冷凝區域,造成均溫板元件吸熱區及遠端冷凝區之間的溫差值過大。 Generally, the working fluid circulation in the ultra-thin chamber is a two-phase reverse flow, that is, the flow direction of the liquid-phase working fluid in the capillary structure is opposite to the flow direction of the gas-phase working fluid in the airway space. The gas-phase working fluid flows from the heat-absorbing area to the condensation area, and the liquid-phase working fluid flows back from the condensation area to the heat-absorbing area to complete the cycle, and the flow directions of the two are just opposite. As the airway space narrows, the length of the airway becomes longer, and the reverse friction force generated by the liquid phase flow between the gas and the surface of the capillary structure increases, the carrying limit of the vapor chamber becomes smaller, and the liquid-phase working fluid flows back to absorb heat. The amount of zone will be limited by the carry limit. In addition, the gas-phase working fluid condenses into a liquid-phase working fluid in advance due to increased friction and enters the capillary structure, and then flows back to the heat-absorbing area in reverse, making it difficult for the heat in the heat-absorbing area to be transferred to the condensation area far away from the heat-absorbing area, resulting in uniformity. The temperature difference between the heat sink area of the warm plate element and the remote condensation area is too large.
就目前而言,雙相逆向流是被實際應用於超薄均溫板元件的技術,而且目前業界能正式量產的超薄均溫板元件厚度皆不低於0.3mm。然而,在5G時代的趨勢下,移動電子產品熱源功率加大,升溫速度更快,電子元件更輕薄,既有的超薄均溫板元件的結構及設計概念,已經無法符合未來應用上的各種需求。超薄均溫板元件厚度越薄,毛細結構厚度及氣道空間高度就越薄,若面對相同的熱源,所需的元件的面積就會越大;元件的面積越大,吸熱區與冷凝區的距離就越長。為了解決厚度在0.3mm以下且面積又大的超薄均溫板元件中液相氣相的循環問題,除了要克服超薄毛細結構的毛細極限外,同時還需克服因雙相逆向流在狹窄空間的攜帶極限問題。 For now, dual-phase counterflow is a technology that is actually applied to ultra-thin vapor chamber components, and the thickness of ultra-thin vapor chamber components that can be formally mass-produced in the industry is not less than 0.3mm. However, under the trend of the 5G era, the heat source power of mobile electronic products is increased, the heating speed is faster, and the electronic components are thinner and thinner. The structure and design concept of the existing ultra-thin vapor chamber components can no longer meet various future applications need. The thinner the thickness of the ultra-thin vapor chamber element, the thinner the thickness of the capillary structure and the height of the airway space. If facing the same heat source, the required area of the element will be larger; the larger the area of the element, the greater the heat absorption area and condensation area the longer the distance. In order to solve the circulation problem of the liquid phase and gas phase in the ultra-thin vapor chamber element with a thickness of less than 0.3mm and a large area, in addition to overcoming the capillary limit of the ultra-thin capillary structure, it is also necessary to overcome the two-phase reverse flow in the narrow Space carry limit problem.
請參見圖1之習知技術中的習知均溫板元件結構P。熱源H在左端,當習知均溫板元件結構P非常輕薄狹長時,氣相工作流體PG在狹窄的 氣道P2中流動會不斷與毛細結構P1摩擦,而冷凝成液相工作流體PL,進而被滯留。因此,潛熱也只被帶到均溫板元件中段區,就被液相工作流體PL帶回到吸熱端。毛細結構表面液相工作流體流向吸熱端時與氣相工作流體方向相反,產生摩擦而降低了液相工流體往吸熱區的攜帶極限。利用實驗舉例說明,若吸熱區均溫板表面的溫度T1為55度,中段區的溫度T2為50度,右端的溫度T3僅為40度,溫差△T13相差15度。而一般均溫板元件要求溫差△T13要控制在5度以內。這表示熱能累積在左端到中間,並沒有被輸送到右端,而均溫板並沒有達到均溫的功能。這種問題在超薄均溫板元件厚度越薄,元件面積越大,T1-T3距離越遠時將越加的明顯。這會使得移動電子装置系統商在對整個系統做熱管理設計時,對於厚度小於0.3mm的超薄均溫板元件的尺寸大小、形狀設計存在著一些限制條件。 Please refer to FIG. 1 for the conventional vapor chamber element structure P in the prior art. The heat source H is at the left end. When the conventional vapor chamber element structure P is very thin and long, the gas phase working fluid PG is in the narrow The flow in the air passage P2 will constantly rub against the capillary structure P1, and condense into a liquid-phase working fluid PL, which is then retained. Therefore, the latent heat is only brought to the middle section of the vapor chamber, and then is brought back to the heat-absorbing end by the liquid-phase working fluid PL. When the liquid-phase working fluid on the surface of the capillary structure flows to the heat-absorbing end, it is opposite to the direction of the gas-phase working fluid, which produces friction and reduces the carrying limit of the liquid-phase working fluid to the heat-absorbing region. Using an example to illustrate, if the temperature T1 on the surface of the uniform temperature plate in the heat-absorbing area is 55 degrees, the temperature T2 in the middle section is 50 degrees, and the temperature T3 at the right end is only 40 degrees, the temperature difference ΔT13 is 15 degrees. The general temperature chamber components require that the temperature difference △T13 should be controlled within 5 degrees. This means that heat energy accumulates from the left end to the middle, and is not transported to the right end, and the temperature equalization plate does not achieve the function of uniform temperature. This problem will become more obvious when the thickness of the ultra-thin vapor chamber is thinner, the area of the element is larger, and the distance between T1-T3 is farther. This will cause mobile electronic device system manufacturers to have some restrictions on the size and shape design of ultra-thin vapor chamber elements with a thickness of less than 0.3 mm when designing the thermal management of the entire system.
如果熱能只在習知均溫板結構P的吸熱端和中段區間循環,而不能到達右端,右端的工作流體也缺乏對流。工作流體沒有足夠長的循環距離,也就沒辦法發揮習知均溫板結構P最大的解熱及導熱效益。 If heat energy only circulates between the heat-absorbing end and the middle section of the known vapor chamber structure P, but cannot reach the right end, the working fluid at the right end also lacks convection. If the working fluid does not have a long enough circulation distance, there is no way to exert the maximum heat dissipation and heat conduction benefits of the conventional vapor chamber structure P.
因此,如何讓工作流體在超薄均溫板元件,尤其是厚度小於0.3mm,尺寸長度大於60mm,面積大於2000mm2的超薄均溫板元件中快速且完整循環,達到理想的導熱與解熱功能,是5G時代製作超薄均溫板急需要解決之課題。 Therefore, how to make the working fluid circulate quickly and completely in the ultra-thin vapor chamber element, especially the ultra-thin vapor chamber element with a thickness less than 0.3mm, a dimension length greater than 60mm, and an area greater than 2000mm2, so as to achieve ideal heat conduction and heat dissipation functions , is an urgent problem to be solved in the manufacture of ultra-thin vapor chambers in the 5G era.
有鑑於此,本發明主要的目的是要解決大尺寸超薄型均溫板中,由於工作流體雙相逆向流的攜帶極限值過低造成元件吸熱區和遠端冷凝區之間溫差過大的問題,以使得高功率超薄大尺寸的均溫板元件的製作 及應用得以實現。本發明利用大面積超薄均溫板元件內部毛細結構的配置形成方式以及液氣兩相工作流體的流道設計,來改變目前一般均溫板元件內工作流體的雙相逆向流循環模式,而形成工作流體的雙相單向流的循環型態。進而,使工作流體在超薄均溫板中在吸熱區及遠端冷凝區之間呈現良好的氣液雙相循環,以解決攜帶極限造成元件溫差過大之問題,並解決單一個吸熱區複數個遠端冷凝區以及複數個吸熱區複數個遠端冷凝區的元件均溫性問題。 In view of this, the main purpose of the present invention is to solve the problem that the temperature difference between the heat absorption area and the remote condensation area of the element is too large due to the low carrying limit value of the two-phase reverse flow of the working fluid in the large-size ultra-thin vapor chamber , so as to make high-power ultra-thin and large-size vapor chamber components and applications are realized. The present invention uses the arrangement and formation of the internal capillary structure of the large-area ultra-thin vapor chamber element and the flow channel design of the liquid-gas two-phase working fluid to change the current two-phase reverse flow circulation mode of the working fluid in the general chamber element, and A circulation pattern that forms a two-phase unidirectional flow of the working fluid. Furthermore, the working fluid presents a good gas-liquid two-phase circulation between the heat absorption area and the remote condensation area in the ultra-thin temperature chamber, so as to solve the problem of excessive temperature difference of the components caused by the carrying limit, and solve the problem of multiple heat absorption areas in a single heat absorption area. The problem of temperature uniformity of components in the remote condensation area and the plurality of heat absorption areas and the plurality of remote condensation areas.
本發明提供一種具雙相單向流之超薄型均溫板元件,包含有一第一金屬片材、一第二金屬片材、一毛細結構和一工作流體。第一金屬片材具有一第一凹陷表面、M個第一長條型支撐牆、M+1個第一溝槽結構。第一凹陷表面分為吸熱區、至少一遠端冷凝區和中段區,M個第一長條型支撐牆設置於中段區且分隔出M+1個第一溝槽結構。第二金屬片材具有一第二表面,疊合於第一金屬片材之第一凹陷表面上。M+1個第一溝槽結構和第二表面之間形成M+1個容置空間。M+1個容置空間藉由吸熱區和遠端冷凝區相互連通。M+1個容置空間進一步包含有具有一第一區段的P個第一容置空間以及具有一第二區段的Q個第二容置空間。其中,P、Q、M皆為自然數,P和Q皆≧1,M≧2,P+Q≦M+1。毛細結構連續性地形成於吸熱區、遠端冷凝區和第一容置空間。毛細結構佔據第一區段之空間,且毛細結構不形成於第二區段。工作流體設置於超薄型均溫板元件之內,根據環境不同在一氣相工作流體和一液相工作流體之間相變轉換。其中,當吸熱區被加熱時,氣相工作流體自吸熱區沿著第二容置空間朝向遠端冷凝區流動,液相工作流體自遠端冷凝區沿著第一容置空間朝向吸熱區流動。 The invention provides an ultra-thin uniform temperature plate element with two-phase unidirectional flow, which includes a first metal sheet, a second metal sheet, a capillary structure and a working fluid. The first metal sheet has a first concave surface, M first elongated support walls, and M+1 first groove structures. The first concave surface is divided into a heat absorption area, at least one remote condensation area and a middle section area, and M first elongated support walls are arranged in the middle section area and separate M+1 first groove structures. The second metal sheet has a second surface superimposed on the first concave surface of the first metal sheet. M+1 accommodating spaces are formed between the M+1 first trench structures and the second surface. The M+1 accommodation spaces are connected to each other through the heat absorption area and the remote condensation area. The M+1 accommodating spaces further include P first accommodating spaces having a first segment and Q second accommodating spaces having a second segment. Wherein, P, Q, and M are all natural numbers, both P and Q≧1, M≧2, and P+Q≦M+1. The capillary structure is continuously formed in the heat absorption area, the remote condensation area and the first accommodating space. The capillary structure occupies the space of the first section, and the capillary structure is not formed in the second section. The working fluid is arranged in the ultra-thin uniform temperature plate element, and changes phases between a gas-phase working fluid and a liquid-phase working fluid according to different environments. Wherein, when the heat absorption area is heated, the gas phase working fluid flows from the heat absorption area along the second accommodating space toward the distal condensation area, and the liquid phase working fluid flows from the remote condensation area along the first accommodation space toward the heat absorption area .
其中,第一區段位於第一容置空間中貼近吸熱區之處,第二區段位於第二容置空間中貼近吸熱區之處。進一步地,第二區段可覆有一疏水性塗層。 Wherein, the first section is located in the first accommodating space close to the heat absorption area, and the second section is located in the second accommodating space close to the heat absorption area. Further, the second section may be coated with a hydrophobic coating.
其中,超薄型均溫板元件尺寸之最長長度不小於60mm,超薄型均溫板元件之總厚度不大於0.3mm,超薄型均溫板元件面積不小於2000mm2,第二容置空間之第二區段之長度不小於1.0mm。 Among them, the longest length of the ultra-thin vapor chamber element is not less than 60mm, the total thickness of the ultra-thin vapor chamber element is not greater than 0.3mm, the area of the ultra-thin vapor chamber element is not less than 2000mm 2 , and the second accommodating space The length of the second segment is not less than 1.0mm.
進一步地,本發明中毛細結構進一步可區分為第一毛細結構和第二毛細結構,第一毛細結構設置於吸熱區,第二毛細結構設置於遠端冷凝區及中段區,且第一毛細結構之孔隙率大於第二毛細結構。 Further, the capillary structure in the present invention can be further divided into a first capillary structure and a second capillary structure, the first capillary structure is arranged in the heat-absorbing region, the second capillary structure is arranged in the distal condensation region and the middle region, and the first capillary structure The porosity is greater than the second capillary structure.
第二表面進一步是一第二凹陷表面,具有M個第二長條型支撐牆和M+1個第二溝槽結構,該等第二長條型支撐牆對應於該等第一長條型支撐牆,並分隔出該等第二溝槽結構,該等第一溝槽結構和該等第二溝槽結構疊合形成該M+1個容置空間。 The second surface is further a second concave surface, which has M second elongated support walls and M+1 second groove structures, and the second elongated support walls correspond to the first elongated support walls The supporting wall separates the second trench structures, and the first trench structures and the second trench structures are superimposed to form the M+1 accommodation spaces.
進一步地,毛細結構之佔據空間比例自第二區段經遠端冷凝區至第一區段呈梯度上升。 Further, the proportion of space occupied by the capillary structure increases gradually from the second section through the remote condensation zone to the first section.
毛細結構係為粉末燒結之一金屬多孔隙毛細結構,金屬多孔隙毛細結構包含有複數個鏈狀銅構件和複數個類球狀銅構件,鏈狀銅構件相互連結,類球狀銅構件散佈於鏈狀銅構件之間,且類球狀銅構件的平均直徑大於鏈狀銅構件的平均直徑。 The capillary structure is a metal porous capillary structure of powder sintering. The metal porous capillary structure contains a plurality of chain-shaped copper components and a plurality of spherical copper components. The chain-shaped copper components are connected to each other, and the spherical copper components are scattered in the Between the chain-shaped copper components, and the average diameter of the spherical copper components is larger than the average diameter of the chain-shaped copper components.
本發明中,金屬多孔隙毛細結構為一漿料經印刷工藝、烘乾工藝、裂解工藝和燒結工藝所製成,漿料包含有一聚合物膠體、複數個金屬銅顆粒和複數個銅氧化物顆粒。 In the present invention, the metal porous capillary structure is made of a slurry through printing process, drying process, cracking process and sintering process, and the slurry contains a polymer colloid, a plurality of metal copper particles and a plurality of copper oxide particles .
本發明主要的目的是提升超薄型較大尺寸均溫板元件的熱傳導效率以降低該元件吸熱區與遠端冷凝區之間的溫差值。尤其是適用於元件厚度不大於0.3mm且尺寸長度不小於60mm、面積不小於2000mm2、形狀不規則的超薄型均溫板元件。由於元件內部容置空間及氣道過於狹窄,且吸熱區至遠端冷凝區之間距離過長;又因毛細極限及攜帶極限的限制,而造成工作流體傳導效率不足。兩者限制共同造成吸熱區與冷凝區之間的溫差值過大,熱能無法有效傳導。 The main purpose of the present invention is to improve the heat conduction efficiency of an ultra-thin vapor chamber element with a larger size so as to reduce the temperature difference between the heat absorption area of the element and the remote condensation area. It is especially suitable for ultra-thin vapor chamber elements with an irregular shape, whose thickness is not greater than 0.3mm, whose size and length are not less than 60mm, and whose area is not less than 2000mm 2 . Due to the narrow interior space and air passage of the components, and the long distance between the heat absorption area and the remote condensation area, and the limitation of the capillary limit and the carry limit, the working fluid conduction efficiency is insufficient. The two restrictions together cause the temperature difference between the heat absorption area and the condensation area to be too large, and the heat energy cannot be effectively conducted.
而本發明之設計提供之雙相單向流之薄型均溫板元件,在中段區由M條長條型支撐牆隔出M+1條長條型容置空間。藉由填滿第一容置空間中第一區段的毛細結構來阻擋氣相工作流體經第一容置空間向遠端冷凝區流動,氣相工作流體集中通往第二容置空間流動而流向遠端的冷凝區。藉由沒有舖置及形成毛細結構的第二區段斷開了吸熱區的毛細結構與冷凝區毛細結構在第二容置空間中的連通,阻止了冷凝後的液相工作流體藉由第二容置空間中的毛細結構逆向回流至吸熱區,而只能與氣相工作流體一樣順向的藉由遠端冷凝區及第一容置空間的連續性毛細結構流向吸熱區,以完成整個液氣相的循環。 And the design of the present invention provides the thin-type vapor chamber element of two-phase unidirectional flow, and M+1 strip-shaped accommodation spaces are separated by M strip-shaped support walls in the middle section. By filling the capillary structure of the first section in the first accommodating space, the gas-phase working fluid is blocked from flowing to the remote condensation area through the first accommodating space, and the gas-phase working fluid flows toward the second accommodating space in a concentrated manner. flow to the remote condensation zone. By not laying and forming the second section of the capillary structure, the communication between the capillary structure of the heat-absorbing region and the capillary structure of the condensation region in the second accommodating space is broken, preventing the condensed liquid-phase working fluid from passing through the second accommodating space. The capillary structure in the accommodating space flows back to the heat-absorbing area in reverse, and can only flow to the heat-absorbing area in the same direction as the gas-phase working fluid through the continuous capillary structure of the remote condensation area and the first accommodating space to complete the entire liquid circulation of the gas phase.
S:超薄型均溫板元件 S: ultra-thin vapor chamber element
1:第一金屬片材 1: First metal sheet
2:第二金屬片材 2: Second metal sheet
3:毛細結構 3: capillary structure
10:第一凹陷表面 10: The first concave surface
11:第一溝槽結構 11: The first groove structure
15:第一長條型支撐牆 15: The first long support wall
17:支撐柱 17: Support column
20:第二表面 20: Second Surface
22:第二溝槽結構 22: Second groove structure
25:第二長條型支撐牆 25: Second long support wall
31:第一毛細結構 31: The first capillary structure
32:第二毛細結構 32:Second capillary structure
37:鏈狀銅構件 37: chain copper component
38:類球狀銅構件 38: Spherical copper component
51:第一容置空間 51: The first storage space
52:第二容置空間 52: The second storage space
101:吸熱區 101: Heat absorption area
102:遠端冷凝區 102: Remote condensation area
105:中段區 105: Middle section area
510:第一區段 510: first segment
520:第二區段 520:Second section
D1、D3:長度 D1, D3: Length
D2:厚度 D2: Thickness
H:熱源 H: heat source
P:習知均溫板結構 P: Conventional vapor chamber structure
P1:毛細結構 P1: capillary structure
P2:氣道 P2: airway
PL:液相工作流體 PL: liquid phase working fluid
PG:氣相工作流體 PG: gas phase working fluid
SL:液相工作流體 SL: liquid working fluid
SG:氣相工作流體 SG: gas phase working fluid
T1~T6:溫度 T1~T6: temperature
圖1習知技術中的均溫板元件結構及工作流體循環模式; The vapor chamber element structure and working fluid circulation mode in the prior art of Fig. 1;
圖2繪示本發明一具體實施例中第一金屬片材和第二金屬片材之示意圖; Fig. 2 depicts a schematic diagram of a first metal sheet and a second metal sheet in a specific embodiment of the present invention;
圖3A繪示本發明一具體實施例中超薄型均溫板元件之俯瞰示意圖; Fig. 3A is a schematic view showing a bird's-eye view of an ultra-thin vapor chamber element in a specific embodiment of the present invention;
圖3B繪示圖3A之實施例中氣相工作流體和液相工作流體之流動示意圖; FIG. 3B is a schematic diagram showing the flow of gas-phase working fluid and liquid-phase working fluid in the embodiment of FIG. 3A;
圖4A繪示圖3B之實施例中沿AA切線之第一容置空間之剖面圖; Fig. 4A is a sectional view of the first accommodating space along the tangent line AA in the embodiment of Fig. 3B;
圖4B繪示圖3B之實施例中沿BB切線之第二容置空間之剖面圖; Fig. 4B is a cross-sectional view of the second accommodating space along the tangent line BB in the embodiment of Fig. 3B;
圖5繪示本發明另一具體實施例中超薄型均溫板元件之俯瞰示意圖; Fig. 5 is a schematic view showing a bird's-eye view of an ultra-thin vapor chamber element in another specific embodiment of the present invention;
圖6A繪示本發明另一具體實施例之第一容置空間之剖面圖; FIG. 6A shows a cross-sectional view of a first accommodating space according to another embodiment of the present invention;
圖6B繪示圖6A實施例之第二容置空間之剖面圖; Fig. 6B shows a cross-sectional view of the second accommodating space in the embodiment of Fig. 6A;
圖7繪示本發明一具體實施例中毛細結構之示意圖; Fig. 7 depicts a schematic diagram of the capillary structure in a specific embodiment of the present invention;
圖8繪示本發明一具體實施例中第一毛細結構和第二毛細結構之示意圖; Fig. 8 shows a schematic diagram of a first capillary structure and a second capillary structure in a specific embodiment of the present invention;
圖9A繪示本發明另一具體實施例之第一容置空間之剖面圖; FIG. 9A shows a cross-sectional view of a first accommodating space according to another embodiment of the present invention;
圖9B繪示圖9A實施例之第二容置空間之剖面圖。 FIG. 9B is a cross-sectional view of the second accommodating space of the embodiment in FIG. 9A .
為了讓本發明的優點,精神與特徵可以更容易且明確地瞭解,後續將以具體實施例並參照所附圖式進行詳述與討論。需注意的是,這些具體實施例僅為本發明代表性的具體實施例,其中所舉例的特定方法、裝置、條件、材質等並非用以限定本發明或對應的具體實施例。又,圖中垂直方向、水準方向和各元件僅係用於表達其相對位置,且未按其實際比例繪述,合先敘明。 In order to make the advantages, spirit and characteristics of the present invention more easily and clearly understood, specific embodiments will be described and discussed in detail with reference to the accompanying drawings. It should be noted that these specific embodiments are only representative specific embodiments of the present invention, and the specific methods, devices, conditions, materials, etc. exemplified therein are not intended to limit the present invention or the corresponding specific embodiments. In addition, the vertical direction, horizontal direction and various components in the figure are only used to express their relative positions, and are not drawn according to their actual scale, so they will be described first.
請參閱圖2至圖4。圖2繪示本發明一具體實施例中第一金屬片材和第二金屬片材之示意圖;圖3A繪示超薄型均溫板元件之俯瞰示意圖;圖3B繪示圖3A之實施例中氣相工作流體和液相工作流體之流動示意圖;圖4A繪示圖3B之實施例中沿AA切線之剖面圖;圖4B繪示圖3B之實施例中沿BB切線之剖面圖。圖4A和圖4B中繪示的虛線代表容置空間的範圍。 See Figures 2 through 4. Fig. 2 is a schematic view of the first metal sheet and the second metal sheet in a specific embodiment of the present invention; Fig. 3A is a schematic view of an ultra-thin vapor chamber element; Fig. 3B is a schematic view of the embodiment of Fig. 3A Schematic diagram of the flow of gas-phase working fluid and liquid-phase working fluid; FIG. 4A shows a cross-sectional view along tangent line AA in the embodiment of FIG. 3B; FIG. 4B shows a cross-sectional view along tangent line BB in the embodiment of FIG. 3B. The dotted lines shown in FIG. 4A and FIG. 4B represent the range of the accommodating space.
一種具雙相單向流之超薄型均溫板元件S,包含有一第一金
屬片材1、一第二金屬片材2、一毛細結構3和一工作流體(圖未示)。第一金屬片材1具有一第一凹陷表面10、M個第一長條型支撐牆15、M+1個第一溝槽結構11,M≧2。第一凹陷表面分為吸熱區101、至少一遠端冷凝區102和中段區105,M個第一長條型支撐牆15設置於中段區105且分隔出M+1個第一溝槽結構11。第二金屬片材2具有一第二表面20,疊合於第一金屬片材1之第一凹陷表面10上。M+1個第一溝槽結構11和第二表面20之間形成M+1個容置空間5。M+1個容置空間5藉由吸熱區101和遠端冷凝區102相互連通。M+1個容置空間5進一步包含有具有一第一區段510的P個第一容置空間51以及具有一第二區段520的Q個第二容置空間52。其中,P、Q、M皆為自然數,P和Q皆≧1。
An ultra-thin vapor chamber element S with two-phase unidirectional flow, including a first
毛細結構3連續性地形成於吸熱區101、遠端冷凝區102和第一容置空間51。毛細結構3佔據第一區段510之空間,且毛細結構3不形成於第二區段520。工作流體設置於超薄型均溫板元件S之內,根據環境不同在一氣相工作流體SG和一液相工作流體SL之間相變轉換;基本上是溫度高時相變成氣相工作流體SG,溫度低時相變成液相工作流體SL。其中,當吸熱區101被加熱時,氣相工作流體SG自吸熱區101沿著第二容置空間52朝向遠端冷凝區102流動,液相工作流體SL自遠端冷凝區102沿著第一容置空間51朝向吸熱區101流動。
The
吸熱區101為熱源H所對應的區段,通常吸熱區101較熱源H更略大,也就是吸熱區101之俯瞰面積大於熱源H之俯瞰面積。所謂毛細結構3之佔據空間,係指將毛細結構3內部之孔隙也視作為毛細結構3之一部份,因此毛細結構3外表面之長寬高相乘即為毛細結構3佔據空間。本說明
書中,除了圖7及圖8,毛細結構3在圖中以點狀區域呈現。第一溝槽結構11中無點的空白區域為第二容置空間52的第二區段520,較密的點區為第一容置空間51的第一區段510。
The
第一容置空間51和第二容置空間52原則上是被第二表面20、第一凹陷表面10(或/和其上的毛細結構3)、第一長條型支撐牆15所包圍成長條型的空間。第一容置空間51和第二容置空間兩端連通吸熱區101和遠端冷凝區102,而第一區段510和第二區段520則是長條型空間中的橫切段落。在若干實施例中,第一容置空間51和第二容置空間分別約略等於其所在之第一溝槽結構11所占空間。
The first
第一長條型支撐牆15可以是蝕刻第一金屬片材1而形成,或可為含有金屬的漿料經高溫燒結而成的緻密性牆體。第一長條型支撐牆15可限制工作流體在相鄰兩容置空間之間穿越。被毛細結構3佔滿的第一區段510,其毛細結構3的孔隙中會大致充滿液相工作流體SL,因此也會限制吸熱區氣相工作流體SG的穿越;不鋪設毛細結構3的第二區段520,因為沒有毛細結構3帶動液相工作流體SL流動,遠端冷凝區102的液相工作流體SL不會經第二區段520回流到吸熱區101。
The first
第一長條型支撐牆15設置的位置定義了中段區105至少一邊的界線。第一長條型支撐牆15也隔絕了不同第一容置空間51和第二容置空間52的直接連通,使第一容置空間51和第二容置空間52必須仰賴吸熱區101和遠端冷凝區102連通。在圖4及之後的剖面圖視角中,會看到第一長條型支撐牆15位置落在毛細結構3之後方,長條型支撐牆在圖中以白色區域呈現。
The position of the first
M個第一長條型支撐牆15隔出M+1個第一溝槽結構11,而吸熱區101、M+1個第一溝槽結構11、遠端冷凝區102形成一個多重環繞路線的腔體。藉由幾乎填滿第一區段510的毛細結構3,阻擋吸熱區101毛細結構3中液相工作流體SL沸騰時產生的氣相工作流體SG通過第一容置空間51,而集中地通往第二容置空間52朝遠端冷凝區102流動。藉由幾乎沒有毛細結構3的第二區段520,吸熱區101的氣相工作流體SG較無阻礙的從第二容置空間52通往遠端冷凝區102。在遠端冷凝區102凝結的液相工作流體SL,則因為第二區段520幾乎沒有毛細結構3,缺乏毛細途徑而難以流通過第二容置空間52至吸熱區101,而是集中從第一容置空間51的毛細結構3中回流至吸熱區101。液相工作流體SL從遠端冷凝區102經過第一容置空間51到達吸熱區101;而氣相工作流體SG從吸熱區101,依序經過第二容置空間52和遠端冷凝區102到達第一容置空間51,逐漸冷凝。因此,液相工作流體SL和氣相工作流體SG的流動起始點不同,但流動方向相同。此外,吸熱區101到遠端冷凝區102的對流方向形成後,有助於帶動工作流體對流速度,進一步減少紊流,再次提升導熱效率。
M first elongated
在具體實施例中,由於P個第一容置空間51及Q個第二容置空間52在複數個遠端冷凝區102是相互連通的,毛細結構3中的液相工作流體SL會因毛細壓差而自行選擇回流至吸熱區101的第一容置空間51通道。
In a specific embodiment, since the P first
另外,藉由改變第二容置空間52中沒有形成毛細結構3的第二區段520的長度D1,來調節氣相工作流體SG的冷凝位置,以達到優化元件各區的均溫目的。
In addition, by changing the length D1 of the
本發明中,第一區段510的目的是為了阻擋氣相工作流體SG
流通,能夠一定程度阻擋路徑的區域即可稱為第一區段510,通常是第一容置空間51中最靠近吸熱區101之區域。第二區段520的目的是為了截斷毛細結構,使液相工作流體SL無法從第二容置空間52流向吸熱區101,第二容置空間52與吸熱區101中間間隔的區域即可稱為第二區段520,通常是第二容置空間52中最靠近吸熱區101之區域。第一區段510位於第一容置空間51中貼近吸熱101區之處,第二區段520位於第二容置空間52中貼近吸熱區101之處。第一區段510和第二區段520的邊緣越接近吸熱區,越可以將單向循環最大化。
In the present invention, the purpose of the
於具體實施例中,毛細結構3填滿第一區段510的空間,或大致填滿第一區段510的空間。第一區段510中毛細結構3之佔據空間比例越高,形成單向流工作流體的效果越好。第二區段520中沒有任何毛細結構3,或僅形成非常薄的一層毛細結構。第二區段520中毛細結構3之佔據空間比例越低,形成單向流工作流體的效果越好。在最理想的狀況下,第一容置空間51之第一區段510中,毛細結構3之佔據空間比例為100%;第二容置空間52之第二區段520中,毛細結構3之佔據空間比例為0%。此時,形成單向流工作流體的效果最佳。基於實務上毛細結構3之佔據空間比例不易達到0%或100%,在一較佳的實施例中,第一容置空間51之第一區段510中,毛細結構3之佔據空間比例大於90%,稱為填滿毛細結構3;第二容置空間52之第二區段520中,毛細結構3之佔據空間比例小於10%,稱為不形成毛細結構3。
In a specific embodiment, the
為了使第二容置空間52內之液相工作流體不要流回吸熱區101,第二容置空間52之第二區段520之長度D1大於1.0mm,更能有效截斷或降低毛細現象。不同的第二容置空間52中的第二區段520的長度D1可以有
不同長度,用以調節不同容置空間52中氣相工作流體冷凝為液相工作流體進入毛細結構3中的位置,進而調節均溫板上不同點位置的溫度。且當第二區段520中覆有一疏水性塗層時,可使氣相工作流體SG更不易在第二區段520的金屬片材表面凝結,而降低液相工作流體SL流動,或減少液相工作流體進入毛細結構3中進行循環。
In order to prevent the liquid working fluid in the second
於圖3A之實施例中,M=4,P=2,Q=3。也就是超薄型均溫板元件S具有4個第一長條型支撐牆15,5個第一溝槽結構11,兩個第一容置空間51和3個第二容置空間52。P和Q數量可以不同,形成多重流道路線使超薄型均溫板元件S的形狀設計上具有更多的彈性。原則上P+Q≦M+1,也就是第一長條型支撐牆15的數量決定了P+Q的上限數量。
In the embodiment of FIG. 3A , M=4, P=2, and Q=3. That is, the ultra-thin vapor chamber element S has four first
請參閱圖5。圖5繪示本發明另一具體實施例中超薄型均溫板元件之俯瞰示意圖。未特別繪出或描述的元件,其功能與結構與前述實施例大致相同,並依據本實施例做合理的調整。圖5實施例中,M=10,P=5,Q=6。圖5中有兩個遠端冷凝區102,連通同一個吸熱區101。較密佈的第一長條型支撐牆15使得超薄型均溫板元件S有較好的支撐力,並且較有效的限制了毛細方向。11個第一溝槽結構11依序排列,其中最左邊四個和最右邊兩個第一溝槽結構11含有第二區段520,中間五個第一溝槽結構11含有第一區段510。此方式可以使吸熱區101的氣相工作流體平均的自兩側的第二容置空間52導向兩個遠端冷凝區102,液相工作流體再由中間的第一容置空間51流回吸熱區101。此結構設計使超薄型均溫板元件作用時,形成兩個大範圍的工作流體循環路線。
See Figure 5. Fig. 5 is a schematic top view of an ultra-thin vapor chamber element in another embodiment of the present invention. The functions and structures of components not particularly shown or described are roughly the same as those of the foregoing embodiments, and reasonable adjustments can be made according to this embodiment. In the embodiment of Fig. 5, M=10, P=5, Q=6. In FIG. 5 there are two
於其他實施例中,在吸熱區與冷凝區之間,還可以有R個一
般性的第一溝槽結構11,鋪設20%~80%的毛細結構3厚度。此時P+Q<M+1。R個一般性的第一溝槽結構11與第二金屬片材2形成R個容置空間,其液相工作流體與氣相工作流體是以雙相逆向流的模式循環。當吸熱區與冷凝區之間距離較短時,毛細極限及攜帶極限影響循環的程度不大,對溫差影響也不大。
In other embodiments, between the heat absorption zone and the condensation zone, there may also be R one
The general
在一具體實施例中,對於超大面積不規則狀的超薄均溫板元件而言,本發明的毛細結構3及工作流體的氣相及液相的流道設計能具有非常彈性的設計。可以是雙相單向流的工作流體循環模式,亦可以是同時具有雙相單向流及雙相逆向流的工作流體循環模式。
In a specific embodiment, for the ultra-thin vapor chamber element with super-large irregular shape, the design of the
請參閱圖6。圖6A繪示本發明另一具體實施例之第一容置空間之剖面圖;圖6B繪示圖6A實施例之第二容置空間之剖面圖。除了第一區段510和第二區段520,第一凹陷表面10之吸熱區101、遠端冷凝區102、第一容置空間51的其餘部分和第二容置空間52的其餘部分,毛細結構3之佔據空間比例介於20%~80之間。且這些區域中毛細結構3之佔據空間比例自第二區段520經遠端冷凝區102至第一區段510呈梯度上升,例如0.01%、20%、50%、80%、99.99。氣相工作流體順向遇到梯度上升之毛細結構3,可以逐漸的提升毛細結構3對氣相工作流體的捕捉程度,增加冷凝效果,並且逐漸提升了蓄水量和液體傳遞能力。
See Figure 6. FIG. 6A is a cross-sectional view of the first accommodating space of another specific embodiment of the present invention; FIG. 6B is a cross-sectional view of the second accommodating space of the embodiment in FIG. 6A. Except for the
請再參閱圖4B。超薄型均溫板元件S厚度D2原則上不大於0.3mm,厚度D2起算自第一金屬片材1之外表面至第二金屬片材2之外表面。超薄型均溫板元件S之最遠兩點的距離長度D3大於60mm,嚴格來說最遠距離長度D3應接近連接超薄型均溫板元件S之吸熱區101與遠端冷凝區
102之最遠兩端直線距離,圖4B僅為示意。在上述的長度與厚度比尺寸限制下,既有技術與結構尚無法做出良好運作的薄型均溫板,唯有本發明提供的超薄型均溫板元件S可以達成全元件的流體循環。以實驗舉例來說,吸熱區101的溫度T4為52度C,中段區的溫度T5為50度C,右端的溫度T6為48度C,溫差△T46相差4度C。吸熱區與遠端冷凝區之間的溫差僅為4度C,達到一般應用上溫差小於5度C的要求。這表示熱能有效被傳導至另一端,自然能有效解熱散熱。
Please refer to Figure 4B again. The thickness D2 of the ultra-thin vapor chamber element S is in principle not greater than 0.3 mm, and the thickness D2 is calculated from the outer surface of the
請參閱圖7和圖8。圖7繪示本發明一具體實施例中毛細結構之示意圖;圖8繪示本發明一具體實施例中第一毛細結構和第二毛細結構之示意圖。毛細結構3係為粉末燒結之一金屬多孔隙毛細結構,金屬多孔隙毛細結構包含有複數個鏈狀銅構件37和複數個類球狀銅構件38,鏈狀銅構件37相互連結,類球狀銅構件38散佈於鏈狀銅構件37之間,且類球狀銅構件38的平均直徑大於鏈狀銅構件37的平均直徑。於一具體實施例中,金屬多孔隙毛細結構為一漿料經印刷工藝、烘乾工藝、裂解工藝和燒結工藝所製成,漿料包含有一聚合物膠體、複數個金屬銅顆粒和複數個銅氧化物顆粒。
Please refer to Figure 7 and Figure 8. FIG. 7 is a schematic diagram of a capillary structure in a specific embodiment of the present invention; FIG. 8 is a schematic diagram of a first capillary structure and a second capillary structure in a specific embodiment of the present invention. The
於一實施例中,金屬銅粉末之平均粒徑D50約為10um~15um,銅氧化物粉末之平均例徑約為0.5um~5um,尤其可以是八角形晶體的氧化亞銅粉末。漿料經烘乾後去除溶劑形成一固化物,聚合物附著於金屬銅粉末和銅氧化物粉末之間。固化物經裂解後聚合物氣化,在金屬銅粉末和銅氧化物粉末之間留下孔洞。再於氮氫混合氣氛下燒結後,金屬銅粉末形成球狀銅構件38,銅氧化物粉末則拉伸並還原成鏈狀銅構件37,由於銅氧化物粉末較小,還原後比金屬銅粉末更易燒結,並藉由球狀銅構件38
之間的間隙流動,使鏈狀銅構件37和球狀銅構件38彼此交錯的燒結。
In one embodiment, the average particle diameter D50 of the metal copper powder is about 10um~15um, and the average diameter of the copper oxide powder is about 0.5um~5um, especially cuprous oxide powder with octagonal crystals. After the slurry is dried, the solvent is removed to form a cured product, and the polymer is attached between the metal copper powder and the copper oxide powder. After the cured product is cracked, the polymer gasifies, leaving holes between the metal copper powder and the copper oxide powder. After sintering under a nitrogen-hydrogen mixed atmosphere, the copper metal powder forms a
請參閱圖5、圖7和圖8。毛細結構3進一步分為第一毛細結構31和第二毛細結構32,兩者為連續性結構。第一毛細結構31設置於吸熱區101,第二毛細結構32設置於遠端冷凝區102及中段區105,或稱吸熱區101以外之位置。第一毛細結構31之孔隙率大於第二毛細結構32;第一毛細結構31之孔徑大於第二毛細結構32之孔徑;第一毛細結構31中的球狀銅構件38之平均粒徑大於第二毛細結構32中的球狀銅構件38之平均粒徑。
See Figure 5, Figure 7, and Figure 8. The
第一毛細結構31之平均粒徑大有利於液相工作流體沸騰時受到較少熱阻,蒸發成氣相工作流體的速度較快;相對來說,第二毛細結構32之平均粒徑小則有利於提升毛細力,使液相工作流體的流動速度加快。因此,第一毛細結構31設置於吸熱區較有助於液相轉成氣相工作流體,第二毛細結構32設置於其他部分有助於液相工作流體流動,尤其設置在第一區段510處時可阻擋氣相工作流體通過。
The large average particle size of the
請參閱圖9A和圖9B。圖9A和圖9B繪示本發明另一具體實施例之第一容置空間和第二容置空間之剖面圖。為清楚示意,第一金屬片材1和第二金屬片材2並未完全接合。第二表面20進一步是一第二凹陷表面,具有M個第二長條型支撐牆25和M+1個第二溝槽結構22,該等第二長條型支撐牆25對應於該等第一長條型支撐牆15,並分隔出該等第二溝槽結構22,該等第一溝槽結構11和該等第二溝槽結構22疊合形成該M+1個容置空間。
Please refer to Figure 9A and Figure 9B. 9A and 9B are cross-sectional views of the first accommodating space and the second accommodating space according to another embodiment of the present invention. For clarity, the
於一具體實施例中,圖4A的第一金屬片材1需經過兩次的漿料舖置才能形成突起的毛細結構3,亦可直接貼合一片厚度與容置空間厚度D2大約一致的毛細結構3形成氣相工作流體的阻絕。圖9A或圖9B的結構
中,對應的做法是第一金屬片材1或第二金屬片材1各進行一次漿料舖置再燒結,就能形成具有阻擋性的第一區段510之毛細結構3,可改變工序作法,節省第一次舖置漿料後等待固化的時間。
In a specific embodiment, the
此外,本發明中除了第一長條型支撐牆15作為主結構牆體,還可以有次級支撐牆(圖未示)作為輔助結構牆體,以及可以有支撐柱17作為不影響流體方向的局部補強。於一具體實施例中,第一長條型支撐牆15為一連續性之長條型結構,亦可為中間具有狹小縫隙之複數個結構所組成之狀似長條型結構。此處所述之縫隙狭小,是以可忽略工作流體在相鄰容置空間中之滲透效應為基準。
In addition, in the present invention, in addition to the first
本發明主要的目的是提升超薄型較大尺寸均溫板元件的熱傳導效率以降低該元件吸熱區與遠端冷凝區之間的溫差值。尤其是適用於元件厚度不大於0.3mm且尺寸長度不小於60mm、面積不小於2000mm2、形狀不規則的超薄型均溫板元件。由於元件內部容置空間及氣道過於狹窄,且吸熱區至遠端冷凝區之間距離過長;又因毛細極限及攜帶極限的限制,而造成工作流體傳導效率不足。兩者限制共同造成吸熱區與冷凝區之間的溫差值過大,熱能無法有效傳導。 The main purpose of the present invention is to improve the heat conduction efficiency of an ultra-thin vapor chamber element with a larger size so as to reduce the temperature difference between the heat absorption area of the element and the remote condensation area. It is especially suitable for ultra-thin vapor chamber elements with an irregular shape, whose thickness is not greater than 0.3mm, whose size and length are not less than 60mm, and whose area is not less than 2000mm 2 . Due to the narrow interior space and air passage of the components, and the long distance between the heat absorption area and the remote condensation area, and the limitation of the capillary limit and the carry limit, the working fluid conduction efficiency is insufficient. The two restrictions together cause the temperature difference between the heat absorption area and the condensation area to be too large, and the heat energy cannot be effectively conducted.
而本發明之設計提供之具有雙相單向流之薄型均溫板元件,在中段區由M條長條型支撐牆隔出M+1條長條型容置空間。藉由填滿P個第一容置空間中第一區段的毛細結構來阻擋氣相工作流體經P個第一容置空間向遠端冷凝區流動,氣相工作流體集中通往Q個第二容置空間流動而流向遠端的冷凝區。藉由沒有舖置及形成毛細結構的第二區段斷開了吸熱區的毛細結構與冷凝區毛細結構在Q個第二容置空間中的連通,阻止了冷凝 後的液相工作流體藉由Q個第二容置空間中的毛細結構逆向回流至吸熱區,而只能與氣相工作流體一樣順向的藉由遠端冷凝區及P個第一容置空間的連續性毛細結構流向吸熱區,以完成整個液氣相的循環。 And the design of the present invention provides a thin vapor chamber element with two-phase unidirectional flow, M+1 strip-shaped accommodating spaces are separated by M strip-shaped support walls in the middle section. By filling the capillary structure of the first section in the P first accommodation spaces, the gaseous working fluid is prevented from flowing to the remote condensation area through the P first accommodation spaces, and the gaseous working fluid is concentrated to the Qth The flow in the two accommodating spaces flows to the condensation area at the far end. By not laying and forming the second section of the capillary structure, the connection between the capillary structure of the heat-absorbing region and the capillary structure of the condensation region in the Q second accommodating spaces is interrupted, preventing condensation The final liquid-phase working fluid flows back to the heat-absorbing area through the capillary structure in the Q second accommodation spaces, and can only pass through the remote condensation area and the P first accommodation in the same direction as the gas-phase working fluid. The continuous capillary structure of the space flows to the heat-absorbing area to complete the circulation of the entire liquid-gas phase.
同時,可藉由在Q個第二容置空間中的第二區段長度的不同設計來調節氣相工作流體冷凝進入毛細結構的位置,進一步調節均溫板之溫度分佈。另外,由於遠端冷凝區、P個第一容置空間與Q個第二容置空間相互連通,由Q個第二容置空間匯流過來在遠端冷凝區的液相工作流體可依毛細壓力差選擇P個第一容置空間中任一流道藉由毛細結構輸送回吸熱區而形成液氣相循環。 At the same time, the position where the gas-phase working fluid condenses into the capillary structure can be adjusted by different designs of the lengths of the second sections in the Q second accommodating spaces, thereby further adjusting the temperature distribution of the vapor chamber. In addition, since the remote condensation area, the P first accommodation spaces and the Q second accommodation spaces are connected to each other, the liquid-phase working fluid flowing from the Q second accommodation spaces in the remote condensation area can be controlled according to the capillary pressure. The difference selects any flow channel in the P first accommodating spaces to be transported back to the heat-absorbing area through the capillary structure to form a liquid-gas phase circulation.
相較於習知超薄均溫板技術中皆使用雙相逆向流的工作流體循環模式,應用本發明設計在厚度不大於1.0mm、長度超過50mm、面積大於1000mm2之均溫板元件時,即可出現一定程度的導熱及均熱效率之提升。當習知技術和本發明都應用於厚度不大於0.3mm、長度超過60mm、面積大於2000mm2的超薄型均溫板元件時,本發明的導熱及均熱效率更顯著地增加,大幅減少了吸熱區及遠端冷凝區兩端的溫差。是以,本發明有著極佳的導熱及均溫功效。 Compared with the conventional ultra-thin vapor chamber technology that uses the two-phase reverse flow working fluid circulation mode, when applying the present invention to design a vapor chamber element with a thickness of no more than 1.0mm, a length of more than 50mm, and an area of more than 1000mm2 , it can be There is a certain degree of heat conduction and thermal efficiency improvement. When both the conventional technology and the present invention are applied to ultra-thin vapor chamber elements with a thickness not greater than 0.3mm, a length exceeding 60mm, and an area greater than 2000mm2 , the heat conduction and heat uniformity efficiency of the present invention is more significantly increased, and heat absorption is greatly reduced zone and the temperature difference between the two ends of the remote condensation zone. Therefore, the present invention has excellent heat conduction and temperature equalization functions.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。 Through the above detailed description of the preferred embodiments, it is hoped that the characteristics and spirit of the present invention can be described more clearly, and the scope of the present invention is not limited by the preferred embodiments disclosed above. On the contrary, the intention is to cover various changes and equivalent arrangements within the scope of the patent application for the present invention. Therefore, the scope of the scope of the patent application for the present invention should be interpreted in the broadest way based on the above description, so as to cover all possible changes and equivalent arrangements.
S:超薄型均溫板元件 S: ultra-thin vapor chamber element
1:第一金屬片材 1: First metal sheet
10:第一凹陷表面 10: The first concave surface
11:第一溝槽結構 11: The first groove structure
15:第一長條型支撐牆 15: The first long support wall
17:支撐柱 17: Support column
31:毛細結構 31: capillary structure
32:毛細結構 32: capillary structure
51:第一容置空間 51: The first storage space
52.第二容置空間 52. The second storage space
101:吸熱區 101: Heat absorption area
102:遠端冷凝區 102: Remote condensation area
105:中段區 105: Middle section area
510:第一區段 510: first segment
520:第二區段 520:Second segment
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110102491A TWI786526B (en) | 2021-01-22 | 2021-01-22 | Ultra-thin vapor chamber device with two phase unidirectional flow |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110102491A TWI786526B (en) | 2021-01-22 | 2021-01-22 | Ultra-thin vapor chamber device with two phase unidirectional flow |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202229802A TW202229802A (en) | 2022-08-01 |
TWI786526B true TWI786526B (en) | 2022-12-11 |
Family
ID=83782392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110102491A TWI786526B (en) | 2021-01-22 | 2021-01-22 | Ultra-thin vapor chamber device with two phase unidirectional flow |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI786526B (en) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI285251B (en) * | 2005-09-15 | 2007-08-11 | Univ Tsinghua | Flat-plate heat pipe containing channels |
TWI289653B (en) * | 2006-05-12 | 2007-11-11 | Foxconn Tech Co Ltd | Heat pipe |
CN105928403A (en) * | 2016-04-28 | 2016-09-07 | 安徽工业大学 | Powder-microfiber composite porous capillary core applicable to loop heat pipe system |
CN205580271U (en) * | 2016-04-21 | 2016-09-14 | 广州华钻电子科技有限公司 | Gas -liquid separation formula temperature -uniforming plate |
WO2019131599A1 (en) * | 2017-12-25 | 2019-07-04 | 株式会社フジクラ | Heatsink module |
TW201945682A (en) * | 2018-04-26 | 2019-12-01 | 泰碩電子股份有限公司 | Loop heat transfer device with gaseous and liquid working fluid channels separated by partition wall |
TWM602198U (en) * | 2020-02-26 | 2020-10-01 | 永源科技材料股份有限公司 | Capillary structure of heat sink |
-
2021
- 2021-01-22 TW TW110102491A patent/TWI786526B/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI285251B (en) * | 2005-09-15 | 2007-08-11 | Univ Tsinghua | Flat-plate heat pipe containing channels |
TWI289653B (en) * | 2006-05-12 | 2007-11-11 | Foxconn Tech Co Ltd | Heat pipe |
CN205580271U (en) * | 2016-04-21 | 2016-09-14 | 广州华钻电子科技有限公司 | Gas -liquid separation formula temperature -uniforming plate |
CN105928403A (en) * | 2016-04-28 | 2016-09-07 | 安徽工业大学 | Powder-microfiber composite porous capillary core applicable to loop heat pipe system |
WO2019131599A1 (en) * | 2017-12-25 | 2019-07-04 | 株式会社フジクラ | Heatsink module |
TW201945682A (en) * | 2018-04-26 | 2019-12-01 | 泰碩電子股份有限公司 | Loop heat transfer device with gaseous and liquid working fluid channels separated by partition wall |
TWM602198U (en) * | 2020-02-26 | 2020-10-01 | 永源科技材料股份有限公司 | Capillary structure of heat sink |
Also Published As
Publication number | Publication date |
---|---|
TW202229802A (en) | 2022-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100495699B1 (en) | Flat plate heat transferring apparatus and manufacturing method thereof | |
KR100581115B1 (en) | Flat plate heat transferring apparatus and Method for manufacturing the same | |
US8464781B2 (en) | Cooling systems incorporating heat exchangers and thermoelectric layers | |
CN100419355C (en) | Cooling device of hybrid-type | |
US7000684B2 (en) | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device | |
US10727156B2 (en) | Heat spreader with high heat flux and high thermal conductivity | |
CN106376214B (en) | Slim temperature-uniforming plate | |
US8833435B2 (en) | Microscale cooling apparatus and method | |
US20050211418A1 (en) | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device | |
US7549460B2 (en) | Thermal transfer devices with fluid-porous thermally conductive core | |
US8490683B2 (en) | Flat plate type micro heat transport device | |
US20080210405A1 (en) | Fabrication of high surface to volume ratio structures and their integration in microheat exchangers for liquid cooling systems | |
US20040112571A1 (en) | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device | |
KR20040051517A (en) | Heat Transfer Device and Electro Device | |
WO2005104323A2 (en) | Improved microchannel heat sink | |
WO2021253813A1 (en) | Thermal superconducting heat dissipation plate, heat dissipation device and 5g base station device | |
JP4013883B2 (en) | Heat exchanger | |
CN111741650A (en) | Heat superconducting radiating plate, radiator and 5G base station equipment | |
CN111473670A (en) | Heat superconducting heat transfer plate and heat sink | |
JP2008111653A (en) | Cooler | |
TWI786526B (en) | Ultra-thin vapor chamber device with two phase unidirectional flow | |
CN214502177U (en) | Ultra-thin type temperature-uniforming plate element with two-phase unidirectional flow | |
CN114812239B (en) | Ultra-thin type temperature-equalizing plate element with two-phase unidirectional flow | |
JP4572911B2 (en) | Heat exchanger | |
US20220049905A1 (en) | Oscillating heat pipe channel architecture |