TWI783069B - Heat exchanger for regulating temperature of polishing surface of polishing pad,polishing apparatus having such heat exchanger,polishing method for substrate using such heat exchanger,and computer-readable storage medium storing a program for regulating temperature of polishing surface of polishing pad - Google Patents

Heat exchanger for regulating temperature of polishing surface of polishing pad,polishing apparatus having such heat exchanger,polishing method for substrate using such heat exchanger,and computer-readable storage medium storing a program for regulating temperature of polishing surface of polishing pad Download PDF

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TWI783069B
TWI783069B TW107138205A TW107138205A TWI783069B TW I783069 B TWI783069 B TW I783069B TW 107138205 A TW107138205 A TW 107138205A TW 107138205 A TW107138205 A TW 107138205A TW I783069 B TWI783069 B TW I783069B
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aforementioned
heat exchanger
polishing
flow path
grinding
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TW201922416A (en
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丸山徹
本島靖之
松尾尚典
椛沢雅志
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日商荏原製作所股份有限公司
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Abstract

本發明提供一種可防止漿液凝固之熱交換器，其中熱交換器11具備：在內部形成了加熱流路61及冷卻流路62之流路構造體70；及覆蓋流路構造體70之側面的撥水材料71。熱交換器11之側面11a由撥水材料71構成。 The present invention provides a heat exchanger capable of preventing slurry from solidifying, wherein the heat exchanger 11 includes: a flow path structure 70 in which a heating flow path 61 and a cooling flow path 62 are formed; Water repellent material71. The side surface 11a of the heat exchanger 11 is made of a water-repellent material 71 .

Description

用以調整研磨墊之研磨面溫度的熱交換器、具備該熱交 換器之研磨裝置、使用該熱交換器之基板的研磨方法、以及記錄了用以調整研磨墊之研磨面溫度的程式的電腦可讀取記錄媒介 Heat exchanger for adjusting the temperature of the polishing surface of the polishing pad, a polishing apparatus equipped with the heat exchanger, a method of polishing a substrate using the heat exchanger, and a computer recording a program for adjusting the temperature of the polishing surface of the polishing pad readable recording medium

本發明係關於一種用以調整使用於晶圓等之基板研磨的研磨墊之研磨面溫度的裝置及方法。 The present invention relates to a device and method for adjusting the temperature of a polishing surface of a polishing pad used for polishing substrates such as wafers.

CMP(化學機械研磨(Chemical Mechanical Polishing))裝置在半導體元件之製造中使用於研磨晶圓表面的工序。CMP裝置係以研磨頭保持晶圓並使晶圓旋轉，進一步對旋轉之研磨台上的研磨墊按壓晶圓來研磨晶圓表面。研磨中，對研磨墊供給漿液，晶圓表面藉由漿液之化學性作用與漿液中包含之研磨粒的機械性作用而平坦化。 CMP (Chemical Mechanical Polishing) equipment is used in the process of polishing the surface of a wafer in the manufacture of semiconductor devices. The CMP device uses the grinding head to hold the wafer and rotate the wafer, and further presses the wafer on the grinding pad on the rotating grinding table to grind the wafer surface. During polishing, slurry is supplied to the polishing pad, and the surface of the wafer is planarized by the chemical action of the slurry and the mechanical action of the abrasive grains contained in the slurry.

晶圓之研磨率除了晶圓對研磨墊的研磨負荷之外，還取決於研磨墊之研磨面溫度。此因漿液對晶圓之化學性作用取決於溫度。因此，在半導體元件之製造中，為了提高晶圓之研磨率且進一步保持一定，將晶圓研磨中之研磨墊的研磨面溫度保持在最佳值很重要。 In addition to the grinding load of the wafer on the polishing pad, the polishing rate of the wafer also depends on the temperature of the polishing surface of the polishing pad. Therefore, the chemical effect of the slurry on the wafer depends on the temperature. Therefore, in the manufacture of semiconductor devices, in order to increase the polishing rate of the wafer and keep it constant, it is very important to keep the temperature of the polishing surface of the polishing pad during wafer polishing at an optimum value.

因此，過去係使用用以調整研磨墊之研磨面溫度的墊溫度調整裝置。該墊溫度調整裝置具備配置於研磨墊上方之熱交換器(例如參照專利文獻1)。晶圓研磨中，在研磨墊與熱交換器之間有漿液存在狀態下，熱交換器係以 在研磨墊與熱交換器內流動的流體之間進行熱交換，藉此調整研磨面溫度之方式構成。 Therefore, conventionally, a pad temperature adjusting device for adjusting the temperature of the polishing surface of the polishing pad has been used. This pad temperature adjustment device includes a heat exchanger arranged above the polishing pad (for example, refer to Patent Document 1). In wafer polishing, when there is slurry between the polishing pad and the heat exchanger, the heat exchanger is a method of exchanging heat between the polishing pad and the fluid flowing in the heat exchanger, thereby adjusting the temperature of the polishing surface constitute.

通常，為了使晶圓之研磨率(亦稱除去率)上昇，在晶圓研磨中，研磨墊之研磨面係調整成某種程度高的溫度(例如60℃程度)。為了維持此種高溫度，係使高溫流體流入墊溫度調整裝置之熱交換器，使熱交換器本身成為高溫。晶圓研磨中，研磨墊上之漿液接觸於熱交換器，而漿液之一部分會附著熱交換器。因此，在晶圓研磨後，係將純水在熱交換器上噴霧，而從熱交換器上除去漿液。 Usually, in order to increase the polishing rate (also called removal rate) of the wafer, the polishing surface of the polishing pad is adjusted to a certain high temperature (for example, about 60° C.) during wafer polishing. In order to maintain such a high temperature, a high-temperature fluid is flowed into the heat exchanger of the pad temperature adjustment device, so that the heat exchanger itself becomes high temperature. During wafer grinding, the slurry on the polishing pad contacts the heat exchanger, and a part of the slurry will adhere to the heat exchanger. Therefore, after wafer grinding, the slurry is removed from the heat exchanger by spraying pure water on the heat exchanger.

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Document]

[專利文獻1]日本特開2015-044245號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2015-044245

但是，因為熱交換器達到相當的高溫，所以附著於熱交換器之漿液會在晶圓研磨中乾燥，而凝固在熱交換器的側面。乾燥之漿液在下一個晶圓的研磨中會從熱交換器掉落到研磨墊上。乾燥之漿液塊會損傷晶圓表面，而使晶圓產生瑕疵。如上述，在晶圓研磨後係以純水清洗熱交換器，不過一旦凝固之漿液用純水除去困難。而且在研磨晶圓中途，漿液也會乾燥而掉落到研磨墊上。 However, since the heat exchanger reaches a relatively high temperature, the slurry adhering to the heat exchanger dries out during wafer grinding and solidifies on the sides of the heat exchanger. The dried slurry falls from the heat exchanger onto the polishing pad during the polishing of the next wafer. Dried slurry blocks will damage the wafer surface and cause wafer defects. As mentioned above, the heat exchanger is cleaned with pure water after wafer grinding, but it is difficult to remove the solidified slurry with pure water. Also, in the middle of polishing the wafer, the slurry dries and falls onto the polishing pad.

因此，本發明之目的為提供一種可防止漿液凝固之熱交換器。此外，本發明之目的為提供一種具備此種熱交換器之研磨裝置。此外，本發明之目 的為提供一種使用此種熱交換器來研磨基板之研磨方法。此外，本發明之目的為提供一種記錄了用以調整研磨墊之研磨面溫度的程式的電腦可讀取記錄媒介。 Therefore, an object of the present invention is to provide a heat exchanger capable of preventing slurry from solidifying. In addition, the object of the present invention is to provide a grinding device equipped with such a heat exchanger. Furthermore, the object of the present invention is to provide a polishing method for polishing a substrate using such a heat exchanger. Another object of the present invention is to provide a computer-readable recording medium in which a program for adjusting the temperature of a polishing surface of a polishing pad is recorded.

本發明一種樣態之熱交換器，係用以調整研磨墊之研磨面溫度，其特徵為具備：流路構造體，其係在內部形成有加熱流路及冷卻流路；及撥水材料，其係覆蓋前述流路構造體之側面；前述熱交換器之側面係由前述撥水材料構成。 A heat exchanger of the present invention is used to adjust the temperature of the grinding surface of the grinding pad, and is characterized in that it has: a flow path structure, which is formed with a heating flow path and a cooling flow path inside; and a water-repellent material, It covers the side of the aforementioned flow channel structure; the side of the aforementioned heat exchanger is made of the aforementioned water-repellent material.

本發明適合樣態之特徵為：前述撥水材料係由聚四氟乙烯構成之塗布層。 A suitable aspect of the present invention is characterized in that the aforementioned water-repellent material is a coating layer made of polytetrafluoroethylene.

本發明適合樣態之特徵為：前述撥水材料係由撥水性之黏著膠帶構成。 A suitable aspect of the present invention is characterized in that: the aforementioned water-repellent material is made of water-repellent adhesive tape.

本發明適合樣態之特徵為：前述撥水材料係由矽橡膠構成。 A suitable aspect of the present invention is characterized in that: the aforementioned water-repellent material is made of silicone rubber.

本發明適合樣態之特徵為：前述撥水材料包含：矽橡膠；及撥水性之塗布層，其係覆蓋前述矽橡膠之外面。 A suitable aspect of the present invention is characterized in that: the aforementioned water-repellent material includes: silicone rubber; and a water-repellent coating layer covering the outer surface of the aforementioned silicone rubber.

本發明一種樣態之熱交換器，係用以調整研磨墊之研磨面溫度，其特徵為具備：流路構造體，其係在內部形成有加熱流路、冷卻流路及純水流路；及多孔材料，其係固定於前述流路構造體之側面；前述純水流路包圍前述加熱流路及前述冷卻流路，且沿著前述多孔材料之內面延伸，前述多孔材料之內面構成前述純水流路的外壁，前述熱交換器之側面由前述多孔材料的外面構成。 A heat exchanger according to the present invention is used to adjust the temperature of the grinding surface of the polishing pad, and is characterized in that it has: a flow path structure, which is formed with a heating flow path, a cooling flow path and a pure water flow path; and Porous material, which is fixed on the side of the aforementioned flow path structure; the aforementioned pure water flow path surrounds the aforementioned heating flow path and the aforementioned cooling flow path, and extends along the inner surface of the aforementioned porous material, the inner surface of the aforementioned porous material constitutes the aforementioned pure water flow path. The outer wall of the water channel and the side surface of the heat exchanger are formed of the outer surface of the porous material.

本發明適合樣態之特徵為：進一步具備隔熱層，其係配置於前述加熱流路與前述純水流路之間。 A suitable aspect of the present invention is characterized in that it further includes a heat insulating layer disposed between the aforementioned heating channel and the aforementioned pure water channel.

本發明適合樣態之特徵為：前述隔熱層係空氣層。 A suitable feature of the present invention is that the aforementioned heat-insulating layer is an air layer.

本發明適合樣態之特徵為：前述多孔材料係由陶瓷構成。 A suitable aspect of the present invention is characterized in that the aforementioned porous material is made of ceramics.

本發明一種樣態之研磨裝置的特徵為具備：研磨台，其係支撐研磨墊；研磨頭，其係將基板按壓於前述研磨墊之研磨面；液體供給噴嘴，其係在前述研磨墊之研磨面上選擇性供給漿液或純水；及上述熱交換器，其係藉由與前述研磨墊進行熱交換，來調整前述研磨面之溫度。 A lapping device of one aspect of the present invention is characterized by having: a lapping table, which supports the lapping pad; a lapping head, which presses the substrate on the lapping surface of the lapping pad; a liquid supply nozzle, which is attached to the lapping pad of the lapping pad. selectively supply slurry or pure water to the surface; and the heat exchanger, which adjusts the temperature of the polishing surface by exchanging heat with the polishing pad.

本發明一種樣態之研磨方法的特徵為：在研磨墊之研磨面上供給漿液，而且將基板按壓於前述研磨墊之研磨面來研磨該基板，前述基板研磨中，在前述研磨墊之研磨面與熱交換器的底面之間有前述漿液存在狀態下，在前述研磨墊與在前述熱交換器內流動之加熱液及冷卻液之間進行熱交換，前述基板研磨後執行水研磨工序，其係在前述研磨墊之研磨面上供給純水，而且使前述基板接觸前述研磨墊上的純水，前述水研磨工序中包含使前述熱交換器之底面接觸前述研磨墊之研磨面上的純水，而從前述熱交換器底面以前述純水沖洗前述漿液之工序，前述熱交換器係上述熱交換器。 A polishing method according to an aspect of the present invention is characterized in that the slurry is supplied to the polishing surface of the polishing pad, and the substrate is pressed against the polishing surface of the polishing pad to polish the substrate. During the polishing of the substrate, the polishing surface of the polishing pad In the state where the aforementioned slurry exists between the bottom surface of the heat exchanger, heat exchange is performed between the aforementioned polishing pad and the heating liquid and cooling liquid flowing in the aforementioned heat exchanger, and the water polishing process is performed after the aforementioned substrate is polished, which is Pure water is supplied on the polishing surface of the aforementioned polishing pad, and the aforementioned substrate is brought into contact with the pure water on the aforementioned polishing pad. A step of washing the slurry with the pure water from the bottom surface of the heat exchanger, wherein the heat exchanger is the heat exchanger described above.

本發明適合樣態之特徵為：前述水研磨工序後，進一步包含噴霧工序，其係對前述熱交換器之側面噴霧純水。 A suitable aspect of the present invention is characterized in that: after the water grinding step, a spraying step is further included, which is to spray pure water on the side of the heat exchanger.

本發明一種樣態之永久性電腦可讀取記錄媒介，其記錄了用於使電腦執行以下步驟之程式：對台馬達發出指令使研磨台旋轉；對液體供給噴嘴及研磨頭發出指令，從前述液體供給噴嘴供給漿液至前述研磨台上之研磨墊的研磨面，而且以前述研磨頭將基板按壓於前述研磨面來研磨該基板；在前述基板研磨中，對昇降機構發出指令，使熱交換器朝向前述研磨面移動，並在前述研磨墊之研磨面與前述熱交換器的底面之間有前述漿液存在狀態下，在前述研磨墊與流入前述熱交換器內的加熱液及冷卻液之間進行熱交換；及前述基板研磨後，對前述液體供給噴嘴發出指令，從前述液體供給噴嘴供給純水至前述研磨墊之研 磨面，使前述基板接觸前述研磨面上之純水，且使前述熱交換器之底面接觸前述研磨面上的純水，從前述熱交換器底面以前述純水沖洗前述漿液。 A permanent computer-readable recording medium according to an aspect of the present invention, which records a program for causing the computer to execute the following steps: giving instructions to the table motor to rotate the grinding table; sending instructions to the liquid supply nozzle and the grinding head, from the foregoing The liquid supply nozzle supplies the slurry to the polishing surface of the polishing pad on the aforementioned polishing table, and the substrate is pressed against the aforementioned polishing surface by the aforementioned polishing head to polish the substrate; Move toward the aforementioned grinding surface, and carry out between the aforementioned polishing pad and the heating liquid and cooling liquid flowing into the aforementioned heat exchanger under the condition that the aforementioned slurry exists between the aforementioned grinding surface of the aforementioned polishing pad and the bottom surface of the aforementioned heat exchanger. heat exchange; and after the aforementioned substrate is ground, issue instructions to the aforementioned liquid supply nozzle, supply pure water from the aforementioned liquid supply nozzle to the polishing surface of the aforementioned polishing pad, make the aforementioned substrate contact the pure water on the aforementioned polishing surface, and exchange the aforementioned heat The bottom surface of the heat exchanger is in contact with the pure water on the grinding surface, and the slurry is washed from the bottom surface of the heat exchanger with the pure water.

採用本發明時，熱交換器之側面係由撥水材料構成。在基板研磨中附著於撥水材料之漿液集合使其體積增加。導致漿液不易乾燥，而防止在基板研磨中之漿液在熱交換器側面凝固。 When the present invention is adopted, the sides of the heat exchanger are made of water-repellent materials. Slurry adhering to the water-repellent material aggregates during substrate grinding to increase its volume. As a result, the slurry is not easy to dry, and the slurry in the substrate grinding process is prevented from solidifying on the side of the heat exchanger.

採用本發明時，熱交換器之側面係由多孔材料構成。在純水流路中流動之純水通過多孔材料而從多孔材料外面，亦即從熱交換器之側面滲出。結果熱交換器之側面保持在濕潤狀態。不使附著於熱交換器側面之漿液乾燥，而防止漿液在多孔材料上凝固。 When using the present invention, the sides of the heat exchanger are made of porous material. The pure water flowing in the pure water channel passes through the porous material and permeates from the outside of the porous material, that is, from the side of the heat exchanger. As a result the sides of the heat exchanger remain wet. The slurry adhering to the side of the heat exchanger is not dried, and the slurry is prevented from solidifying on the porous material.

採用本發明時，在水研磨工序中，熱交換器底面上之漿液係藉由研磨墊上的純水沖洗。因此，可從熱交換器底面除去漿液。 When the present invention is adopted, in the water grinding process, the slurry on the bottom surface of the heat exchanger is washed with pure water on the grinding pad. Thus, slurry can be removed from the bottom surface of the heat exchanger.

1‧‧‧研磨頭 1‧‧‧Grinding head

2‧‧‧研磨台 2‧‧‧Grinding table

3‧‧‧研磨墊 3‧‧‧Grinding pad

3a‧‧‧研磨面 3a‧‧‧Grinding surface

4‧‧‧液體供給噴嘴 4‧‧‧Liquid supply nozzle

5‧‧‧墊溫度調整裝置 5‧‧‧pad temperature adjustment device

6‧‧‧台馬達 6‧‧‧motors

11‧‧‧熱交換器 11‧‧‧Heat exchanger

11a‧‧‧熱交換器之側面 11a‧‧‧The side of the heat exchanger

11b‧‧‧熱交換器之底面 11b‧‧‧The bottom surface of the heat exchanger

20‧‧‧昇降機構 20‧‧‧Elevating mechanism

30‧‧‧液體供給系統 30‧‧‧Liquid supply system

31‧‧‧加熱液供給槽 31‧‧‧Heating liquid supply tank

32‧‧‧加熱液供給管 32‧‧‧Heating liquid supply pipe

33‧‧‧加熱液返回管 33‧‧‧Heating fluid return pipe

39‧‧‧墊溫度測定器 39‧‧‧Pad temperature detector

40‧‧‧動作控制部 40‧‧‧Motion control department

41‧‧‧第一開閉閥 41‧‧‧First on-off valve

42‧‧‧第一流量控制閥 42‧‧‧First flow control valve

51‧‧‧冷卻液供給管 51‧‧‧Coolant supply pipe

52‧‧‧冷卻液排出管 52‧‧‧Coolant discharge pipe

55‧‧‧第二開閉閥 55‧‧‧The second opening and closing valve

56‧‧‧第二流量控制閥 56‧‧‧Second flow control valve

60‧‧‧清洗噴嘴 60‧‧‧Cleaning nozzle

61‧‧‧加熱流路 61‧‧‧Heating flow path

61a‧‧‧加熱流路之入口 61a‧‧‧Inlet of heating flow path

61b‧‧‧加熱流路之出口 61b‧‧‧Exit of heating flow path

62‧‧‧冷卻流路 62‧‧‧Cooling flow path

62a‧‧‧冷卻流路之入口 62a‧‧‧Inlet of cooling flow path

62b‧‧‧冷卻流路之出口 62b‧‧‧Exit of cooling flow path

64‧‧‧圓弧流路 64‧‧‧Arc flow path

65‧‧‧傾斜流路 65‧‧‧Inclined flow path

70‧‧‧流路構造體 70‧‧‧fluid structure

71‧‧‧撥水材料 71‧‧‧Water repellent material

80‧‧‧黏著膠帶 80‧‧‧adhesive tape

80a‧‧‧黏著層 80a‧‧‧adhesive layer

80b‧‧‧撥水層 80b‧‧‧water-repellent layer

90‧‧‧矽橡膠 90‧‧‧Silicone rubber

91‧‧‧塗布層 91‧‧‧coating layer

92‧‧‧純水流路 92‧‧‧Pure water channel

95‧‧‧多孔材料 95‧‧‧porous materials

97‧‧‧隔熱層 97‧‧‧Insulation layer

100‧‧‧純水供給管線 100‧‧‧pure water supply pipeline

101‧‧‧純水流量調整閥 101‧‧‧Pure water flow adjustment valve

110‧‧‧記憶裝置 110‧‧‧memory device

111‧‧‧主記憶裝置 111‧‧‧main memory device

112‧‧‧輔助記憶裝置 112‧‧‧Auxiliary memory device

120‧‧‧處理裝置 120‧‧‧processing device

130‧‧‧控制裝置 130‧‧‧control device

132‧‧‧記錄媒介讀取裝置 132‧‧‧Recording medium reading device

134‧‧‧記錄媒介埠 134‧‧‧Recording media port

140‧‧‧輸出裝置 140‧‧‧output device

141‧‧‧顯示裝置 141‧‧‧display device

142‧‧‧印刷裝置 142‧‧‧Printing device

150‧‧‧通信裝置 150‧‧‧communication device

W‧‧‧晶圓 W‧‧‧Wafer

第一圖係顯示研磨裝置之示意圖。 The first figure is a schematic diagram showing a grinding device.

第二圖係顯示熱交換器之水平剖面圖。 The second figure shows a horizontal cross-sectional view of the heat exchanger.

第三圖係顯示研磨墊上之熱交換器與研磨頭的位置關係之俯視圖。 The third figure is a top view showing the positional relationship between the heat exchanger on the polishing pad and the polishing head.

第四圖係顯示熱交換器之內部構造的剖面圖。 Figure 4 is a cross-sectional view showing the internal structure of the heat exchanger.

第五圖係顯示其他實施形態之熱交換器的內部構造之剖面圖。 Figure 5 is a cross-sectional view showing the internal structure of a heat exchanger in another embodiment.

第六圖係顯示其他實施形態之熱交換器的內部構造之剖面圖。 Figure 6 is a cross-sectional view showing the internal structure of a heat exchanger in another embodiment.

第七圖係顯示其他實施形態之熱交換器的內部構造之剖面圖。 Figure 7 is a cross-sectional view showing the internal structure of a heat exchanger in another embodiment.

第八圖係顯示其他實施形態之熱交換器的內部構造之剖面圖。 Figure 8 is a cross-sectional view showing the internal structure of a heat exchanger in another embodiment.

第九圖(a)至第九圖(c)係顯示具備熱交換器之研磨裝置研磨晶圓的工序說明圖。 Fig. 9 (a) to Fig. 9 (c) are explanatory diagrams showing the process of polishing a wafer by a lapping device equipped with a heat exchanger.

第十圖係顯示動作控制部之構成的示意圖。 Figure 10 is a schematic diagram showing the structure of the motion control unit.

以下，參照圖式說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第一圖係顯示研磨裝置之示意圖。如第一圖所示，研磨裝置具備：保持基板之一例的晶圓W並使其旋轉之研磨頭1；支撐研磨墊3之研磨台2；在研磨墊3表面選擇性供給漿液或純水之液體供給噴嘴4；及調整研磨墊3之表面溫度的墊溫度調整裝置5。研磨墊3之表面(上面)構成研磨晶圓W之研磨面3a。液體供給噴嘴4由用以供給漿液之漿液噴嘴，與用以供給純水之純水噴嘴的組合構成。 The first figure is a schematic diagram showing a grinding device. As shown in the first figure, the polishing apparatus includes: a polishing head 1 for holding and rotating a wafer W as an example of a substrate; a polishing table 2 for supporting a polishing pad 3; and a device for selectively supplying slurry or pure water on the surface of the polishing pad 3 a liquid supply nozzle 4; and a pad temperature adjusting device 5 for adjusting the surface temperature of the polishing pad 3. The surface (upper surface) of the polishing pad 3 constitutes the polishing surface 3a for polishing the wafer W. As shown in FIG. The liquid supply nozzle 4 is composed of a combination of a slurry nozzle for supplying slurry and a pure water nozzle for supplying pure water.

研磨頭1可在鉛直方向移動，且以其軸心為中心可在箭頭指示之方向旋轉。晶圓W藉由真空吸附等而保持於研磨頭1之下面。研磨台2連結有台馬達6，並可在箭頭指示之方向旋轉。如第一圖所示，研磨頭1及研磨台2係在相同方向旋轉。研磨墊3貼合於研磨台2之上面。 The grinding head 1 can move in the vertical direction, and can rotate in the direction indicated by the arrow with its axis as the center. The wafer W is held under the polishing head 1 by vacuum suction or the like. The grinding table 2 is connected with a motor 6, and can rotate in the direction indicated by the arrow. As shown in the first figure, the grinding head 1 and the grinding table 2 rotate in the same direction. The grinding pad 3 is attached to the upper surface of the grinding table 2 .

研磨裝置具備控制研磨頭1、台馬達6、液體供給噴嘴4、墊溫度調整裝置5之動作的動作控制部40。晶圓W之研磨進行如下。研磨之晶圓W藉由研磨頭1保持，進一步藉由研磨頭1旋轉。另外，研磨墊3與研磨台2一起藉由台馬達6旋轉。該狀態下，從液體供給噴嘴4在研磨墊3表面供給漿液，進一步晶圓W表面藉由研磨頭1而對研磨墊3之研磨面3a按壓。晶圓W表面在漿液存在下藉由與研磨墊3滑動接觸而研磨。晶圓W表面藉由漿液之化學性作用與漿液中包含的研磨粒之機械性作用而平坦化。 The polishing device includes an operation control unit 40 that controls the operations of the polishing head 1 , table motor 6 , liquid supply nozzle 4 , and pad temperature regulator 5 . The polishing of the wafer W is performed as follows. The polished wafer W is held by the polishing head 1 and further rotated by the polishing head 1 . In addition, the polishing pad 3 is rotated by the table motor 6 together with the polishing table 2 . In this state, the slurry is supplied from the liquid supply nozzle 4 to the surface of the polishing pad 3 , and the surface of the wafer W is pressed against the polishing surface 3 a of the polishing pad 3 by the polishing head 1 . The surface of the wafer W is polished by sliding contact with the polishing pad 3 in the presence of slurry. The surface of the wafer W is planarized by the chemical action of the slurry and the mechanical action of the abrasive grains contained in the slurry.

晶圓W研磨後，執行從液體供給噴嘴4供給純水至研磨墊3之研磨面3a，而且使晶圓W接觸研磨墊3上之純水的水研磨工序。 After the wafer W is polished, a water polishing step is performed in which pure water is supplied from the liquid supply nozzle 4 to the polishing surface 3 a of the polishing pad 3 and the wafer W is brought into contact with the pure water on the polishing pad 3 .

墊溫度調整裝置5具備：藉由與研磨墊3進行熱交換來調整研磨面3a之溫度的熱交換器11；將溫度調整後之加熱液及冷卻液供給至熱交換器11之液體供給系統30；及連結於熱交換器11之昇降機構20。熱交換器11位於研磨墊3之研磨面3a的上方，熱交換器11之底面與研磨墊3的研磨面3a相對。昇降機構20係構成使熱交換器11上昇及下降。更具體而言，昇降機構20係構成使熱交換器11之底面在接近研磨墊3的研磨面3a方向，及從研磨墊3之研磨面3a離開的方向移動。昇降機構20具備馬達或空氣氣缸等致動器(無圖示)。昇降機構20之動作藉由動作控制部40控制。 The pad temperature adjusting device 5 includes: a heat exchanger 11 for adjusting the temperature of the polishing surface 3 a by exchanging heat with the polishing pad 3 ; and a liquid supply system 30 for supplying temperature-adjusted heating liquid and cooling liquid to the heat exchanger 11 ; And linked to the lifting mechanism 20 of the heat exchanger 11 . The heat exchanger 11 is located above the polishing surface 3 a of the polishing pad 3 , and the bottom surface of the heat exchanger 11 is opposite to the polishing surface 3 a of the polishing pad 3 . The lift mechanism 20 is configured to lift and lower the heat exchanger 11 . More specifically, the lifting mechanism 20 is configured to move the bottom surface of the heat exchanger 11 in a direction approaching the polishing surface 3 a of the polishing pad 3 and in a direction away from the polishing surface 3 a of the polishing pad 3 . The elevating mechanism 20 includes an actuator (not shown) such as a motor or an air cylinder. The movement of the lifting mechanism 20 is controlled by the movement control unit 40 .

液體供給系統30具備：作為貯存溫度調整後之加熱液的加熱液供給源之加熱液供給槽31；及連結加熱液供給槽31與熱交換器11之加熱液供給管32及加熱液返回管33。加熱液供給管32及加熱液返回管33之一方的端部連接於加熱液供給槽31，另一方的端部連接於熱交換器11。 The liquid supply system 30 includes: a heating liquid supply tank 31 as a heating liquid supply source for storing the temperature-adjusted heating liquid; and a heating liquid supply pipe 32 and a heating liquid return pipe 33 connecting the heating liquid supply tank 31 and the heat exchanger 11 . One end of the heating liquid supply pipe 32 and the heating liquid return pipe 33 is connected to the heating liquid supply tank 31 , and the other end is connected to the heat exchanger 11 .

溫度調整後之加熱液，從加熱液供給槽31通過加熱液供給管32供給至熱交換器11，並在熱交換器11中流動，而後從熱交換器11通過加熱液返回管33返回加熱液供給槽31。如此，加熱液在加熱液供給槽31與熱交換器11之間循環。加熱液供給槽31具有加熱器(無圖示)，加熱液藉由加熱器而加熱至指定溫度。 The temperature-adjusted heating liquid is supplied from the heating liquid supply tank 31 to the heat exchanger 11 through the heating liquid supply pipe 32, and flows in the heat exchanger 11, and then returns to the heating liquid from the heat exchanger 11 through the heating liquid return pipe 33. Supply tank 31. In this manner, the heating liquid circulates between the heating liquid supply tank 31 and the heat exchanger 11 . The heating liquid supply tank 31 has a heater (not shown), and the heating liquid is heated to a predetermined temperature by the heater.

加熱液供給管32中安裝有第一開閉閥41及第一流量控制閥42。第一流量控制閥42配置於熱交換器11與第一開閉閥41之間。第一開閉閥41係不具流量調整功能之閥門，而第一流量控制閥42係具有流量調整功能之閥門。 A first on-off valve 41 and a first flow control valve 42 are installed in the heating liquid supply pipe 32 . The first flow control valve 42 is disposed between the heat exchanger 11 and the first on-off valve 41 . The first on-off valve 41 is a valve without flow adjustment function, and the first flow control valve 42 is a valve with flow adjustment function.

液體供給系統30進一步具備連接於熱交換器11之冷卻液供給管51及冷卻液排出管52。冷卻液供給管51與設置有研磨裝置之工廠的冷卻液供給源(例如冷水供給源)連接。冷卻液通過冷卻液供給管51供給至熱交換器11，並在熱交換器11中流動，而後從熱交換器11通過冷卻液排出管52排出。一種實施形態亦可將在熱交換器11中流動之冷卻液通過冷卻液排出管52而返回冷卻液供給源。 The liquid supply system 30 further includes a coolant supply pipe 51 and a coolant discharge pipe 52 connected to the heat exchanger 11 . The coolant supply pipe 51 is connected to a coolant supply source (for example, a cold water supply source) in a factory where a grinding device is installed. The coolant is supplied to the heat exchanger 11 through the coolant supply pipe 51 , flows in the heat exchanger 11 , and is then discharged from the heat exchanger 11 through the coolant discharge pipe 52 . In one embodiment, the cooling liquid flowing in the heat exchanger 11 can also be returned to the cooling liquid supply source through the cooling liquid discharge pipe 52 .

冷卻液供給管51中安裝有第二開閉閥55及第二流量控制閥56。第二流量控制閥56配置於熱交換器11與第二開閉閥55之間。第二開閉閥55係不具流量調整功能之閥門，而第二流量控制閥56係具有流量調整功能之閥門。 A second on-off valve 55 and a second flow control valve 56 are installed in the coolant supply pipe 51 . The second flow control valve 56 is arranged between the heat exchanger 11 and the second on-off valve 55 . The second on-off valve 55 is a valve without flow adjustment function, and the second flow control valve 56 is a valve with flow adjustment function.

第一開閉閥41、第一流量控制閥42、第二開閉閥55、及第二流量控制閥56連接於動作控制部40，第一開閉閥41、第一流量控制閥42、第二開閉閥55、及第二流量控制閥56之動作藉由動作控制部40來控制。 The first on-off valve 41, the first flow control valve 42, the second on-off valve 55, and the second flow control valve 56 are connected to the action control part 40, and the first on-off valve 41, the first flow control valve 42, the second on-off valve 55 , and the actions of the second flow control valve 56 are controlled by the action control unit 40 .

墊溫度調整裝置5進一步具備測定研磨墊3之研磨面3a溫度(以下稱墊表面溫度)的墊溫度測定器39。墊溫度測定器39連接於動作控制部40。動作控制部40係以依據墊溫度測定器39所測定之墊表面溫度來操作第一流量控制閥42及第二流量控制閥56的方式構成。第一開閉閥41及第二開閉閥55通常打開。墊溫度測定器39可使用不接觸而可測定研磨墊3之研磨面3a溫度的放射溫度計。 The pad temperature adjusting device 5 further includes a pad temperature measuring device 39 for measuring the temperature of the polishing surface 3 a of the polishing pad 3 (hereinafter referred to as pad surface temperature). The pad temperature measuring device 39 is connected to the operation control unit 40 . The operation control unit 40 is configured to operate the first flow control valve 42 and the second flow control valve 56 based on the pad surface temperature measured by the pad temperature measuring device 39 . The first on-off valve 41 and the second on-off valve 55 are normally open. As the pad temperature measuring device 39, a radiation thermometer capable of measuring the temperature of the polishing surface 3a of the polishing pad 3 without contact can be used.

墊溫度測定器39不接觸地測定墊表面溫度，並將其測定值傳送至動作控制部40。動作控制部40係以墊表面溫度維持在預設之目標溫度的方式，依據所測定之墊表面溫度，藉由操作第一流量控制閥42及第二流量控制閥56來控制加熱液及冷卻液之流量。第一流量控制閥42及第二流量控制閥56按照來自動作控制部40之控制信號而動作，來調整供給至熱交換器11之加熱液流量及冷卻 液流量。藉由在熱交換器11中流動的加熱液及冷卻液與研磨墊3之間進行熱交換，而調整墊表面溫度變化。 The pad temperature measuring device 39 measures the pad surface temperature without contact, and transmits the measured value to the operation control unit 40 . The operation control unit 40 controls the heating fluid and the cooling fluid by operating the first flow control valve 42 and the second flow control valve 56 according to the measured pad surface temperature in such a way that the pad surface temperature is maintained at a preset target temperature. of traffic. The first flow control valve 42 and the second flow control valve 56 operate according to the control signal from the operation control unit 40 to adjust the flow rate of the heating liquid and the flow rate of the cooling liquid supplied to the heat exchanger 11 . By exchanging heat between the heating liquid and the cooling liquid flowing in the heat exchanger 11 and the polishing pad 3 , temperature changes on the surface of the pad are adjusted.

研磨墊3之研磨面3a溫度(亦即墊表面溫度)，藉由此種反饋控制而維持在指定的目標溫度。動作控制部40可使用PID控制器。研磨墊3之目標溫度依晶圓W的種類或研磨程序而決定，決定後之目標溫度，可預先輸入於動作控制部40。 The temperature of the polishing surface 3a of the polishing pad 3 (that is, the temperature of the pad surface) is maintained at a specified target temperature by such feedback control. The motion control unit 40 can use a PID controller. The target temperature of the polishing pad 3 is determined according to the type of the wafer W or the polishing program, and the determined target temperature can be input into the operation control unit 40 in advance.

供給至熱交換器11之加熱液係使用溫水。溫水藉由加熱液供給槽31之加熱器，例如加熱至約80℃。欲使研磨墊3之表面溫度更迅速上昇情況下，亦可使用矽油作為加熱液。使用矽油作為加熱液情況下，矽油係藉由加熱液供給槽31之加熱器而加熱至100℃以上(例如約120℃)。供給至熱交換器11之冷卻液係使用冷水或矽油。使用矽油作為冷卻液情況下，冷卻液供給源係將冷卻器連接於冷卻液供給管51，藉由將矽油冷卻至0℃以下，可迅速冷卻研磨墊3。冷水可使用純水。為了冷卻純水而生成冷水，亦可使用冷卻器作為冷卻液供給源。此時，亦可使在熱交換器11中流動之冷水通過冷卻液排出管52而返回冷卻器。 Warm water was used as the heating fluid supplied to the heat exchanger 11 . The warm water is heated to, for example, about 80° C. by the heater of the heating liquid supply tank 31 . To make the surface temperature of the polishing pad 3 rise more rapidly, silicon oil can also be used as the heating fluid. In the case of using silicon oil as the heating liquid, the silicon oil is heated to 100° C. or higher (for example, about 120° C.) by the heater in the heating liquid supply tank 31 . The coolant supplied to the heat exchanger 11 uses cold water or silicon oil. In the case of using silicon oil as the cooling liquid, the cooling liquid supply source is to connect a cooler to the cooling liquid supply pipe 51, and the polishing pad 3 can be rapidly cooled by cooling the silicon oil to below 0°C. Pure water can be used for cold water. In order to cool pure water to generate cold water, a cooler can also be used as a coolant supply source. At this time, the cold water flowing in the heat exchanger 11 can also be returned to the cooler through the cooling liquid discharge pipe 52 .

加熱液供給管32及冷卻液供給管51係完全獨立之配管。因此，加熱液及冷卻液不致混合而同時供給熱交換器11。加熱液返回管33及冷卻液排出管52亦係完全獨立之配管。因此，加熱液不致與冷卻液混合而返回加熱液供給槽31，冷卻液不致與加熱液混合而排出，或是返回冷卻液供給源。 The heating liquid supply pipe 32 and the cooling liquid supply pipe 51 are completely independent pipes. Therefore, the heating liquid and the cooling liquid are simultaneously supplied to the heat exchanger 11 without being mixed. The heating liquid return pipe 33 and the cooling liquid discharge pipe 52 are also completely independent pipes. Therefore, the heating liquid is not mixed with the cooling liquid and returned to the heating liquid supply tank 31, and the cooling liquid is not mixed with the heating liquid and discharged, or returned to the cooling liquid supply source.

墊溫度調整裝置5進一步具備對熱交換器11之側面11a噴霧純水，來清洗熱交換器11的複數個清洗噴嘴60。此等清洗噴嘴60朝向熱交換器11之側面11a而配置。本實施形態係設有2個清洗噴嘴60，不過亦可設置3個以上的清洗 噴嘴60。清洗噴嘴60係為了藉由純水之噴流從熱交換器11之側面11a除去使用於研磨晶圓W的漿液而設。 The pad temperature adjustment device 5 further includes a plurality of cleaning nozzles 60 for cleaning the heat exchanger 11 by spraying pure water on the side surface 11 a of the heat exchanger 11 . These cleaning nozzles 60 are arranged facing the side surface 11 a of the heat exchanger 11 . In this embodiment, two cleaning nozzles 60 are provided, but three or more cleaning nozzles 60 may be provided. The cleaning nozzle 60 is provided to remove the slurry used for grinding the wafer W from the side surface 11 a of the heat exchanger 11 by a jet flow of pure water.

其次，參照第二圖說明熱交換器11。第二圖係顯示熱交換器11之水平剖面圖。如第二圖所示，熱交換器11具備：內部形成有加熱流路61及冷卻流路62之流路構造體70；及覆蓋流路構造體70之側面的撥水材料71。熱交換器11之側面11a由撥水材料71構成。本實施形態之流路構造體70具有圓形。本實施形態係整個熱交換器11具有圓形，且熱交換器11之側面11a係圓筒形狀。熱交換器11之底面平坦且係圓形。熱交換器11之底面由流路構造體70的底面構成。流路構造體70由耐磨耗性優異且熱傳導率高之材質，例如由緻密質之碳化矽(SiC)等的陶瓷材料所構成。 Next, the heat exchanger 11 will be described with reference to the second figure. The second figure shows a horizontal cross-sectional view of the heat exchanger 11 . As shown in FIG. 2 , the heat exchanger 11 includes: a flow path structure 70 in which a heating flow path 61 and a cooling flow path 62 are formed; and a water repellent material 71 covering the side surfaces of the flow path structure 70 . The side surface 11a of the heat exchanger 11 is made of a water-repellent material 71 . The channel structure 70 of this embodiment has a circular shape. In this embodiment, the entire heat exchanger 11 has a circular shape, and the side surface 11a of the heat exchanger 11 is cylindrical. The bottom surface of the heat exchanger 11 is flat and circular. The bottom surface of the heat exchanger 11 is constituted by the bottom surface of the channel structure 70 . The channel structure 70 is made of a material with excellent wear resistance and high thermal conductivity, for example, a ceramic material such as dense silicon carbide (SiC).

加熱流路61及冷卻流路62彼此鄰接(彼此平行)而延伸，且螺旋狀延伸。再者，加熱流路61及冷卻流路62具有點對稱的形狀，且彼此具有相同長度。加熱流路61及冷卻流路62基本上分別由曲率一定之複數條圓弧流路64；及連結此等圓弧流路64之複數條傾斜流路65而構成。鄰接之2條圓弧流路64藉由各傾斜流路65連結。 The heating flow path 61 and the cooling flow path 62 extend adjacent to each other (in parallel to each other), and extend in a spiral shape. Furthermore, the heating flow path 61 and the cooling flow path 62 have point-symmetrical shapes and have the same length as each other. The heating flow path 61 and the cooling flow path 62 are basically composed of a plurality of arc flow paths 64 with constant curvature; and a plurality of inclined flow paths 65 connecting these arc flow paths 64 . The two adjacent arc flow paths 64 are connected by each inclined flow path 65 .

採用此種構成時，可將加熱流路61及冷卻流路62之各個最外周部配置於熱交換器11的最外周部。換言之，熱交換器11之大致整個底面位於加熱流路61及冷卻流路62的下方，加熱液及冷卻液可將研磨墊3之研磨面3a迅速加熱及冷卻。加熱液及冷卻液與研磨墊3之間的熱交換係在研磨墊3之研磨面3a與熱交換器11的底面之間存在漿液的狀態下進行。 With such a configuration, the outermost peripheral portions of the heating flow path 61 and the cooling flow path 62 can be arranged on the outermost peripheral portion of the heat exchanger 11 . In other words, substantially the entire bottom surface of the heat exchanger 11 is located below the heating flow path 61 and the cooling flow path 62 , and the heating liquid and the cooling liquid can rapidly heat and cool the polishing surface 3 a of the polishing pad 3 . The heat exchange between the heating liquid and the cooling liquid and the polishing pad 3 is performed in a state where slurry exists between the polishing surface 3 a of the polishing pad 3 and the bottom surface of the heat exchanger 11 .

加熱液供給管32連接於加熱流路61之入口61a，加熱液返回管33連接於加熱流路61之出口61b。冷卻液供給管51連接於冷卻流路62之入口62a，冷 卻液排出管52連接於冷卻流路62之出口62b。加熱流路61及冷卻流路62之入口61a,62a位於熱交換器11的周緣部，加熱流路61及冷卻流路62之出口61b,62b位於熱交換器11的中心部。因此，加熱液及冷卻液係從熱交換器11之周緣部朝向中心部螺旋狀流動。加熱流路61及冷卻流路62完全分離，避免加熱液及冷卻液在熱交換器11中混合。 The heating liquid supply pipe 32 is connected to the inlet 61 a of the heating flow path 61 , and the heating liquid return pipe 33 is connected to the outlet 61 b of the heating flow path 61 . The coolant supply pipe 51 is connected to the inlet 62a of the cooling flow path 62, and the coolant discharge pipe 52 is connected to the outlet 62b of the cooling flow path 62. The inlets 61 a and 62 a of the heating flow path 61 and the cooling flow path 62 are located at the periphery of the heat exchanger 11 , and the outlets 61 b and 62 b of the heating flow path 61 and the cooling flow path 62 are located at the center of the heat exchanger 11 . Therefore, the heating liquid and the cooling liquid flow spirally from the peripheral portion toward the central portion of the heat exchanger 11 . The heating flow path 61 and the cooling flow path 62 are completely separated to avoid mixing of the heating liquid and the cooling liquid in the heat exchanger 11 .

第三圖係顯示研磨墊3上之熱交換器11與研磨頭1的位置關係之俯視圖。熱交換器11從上觀看時係圓形，且熱交換器11之直徑比研磨頭1的直徑小。從研磨墊3之旋轉中心至熱交換器11的中心之距離，與從研磨墊3之旋轉中心至研磨頭1的中心之距離相同。加熱流路61及冷卻流路62彼此鄰接，因此加熱流路61及冷卻流路62，除了在研磨墊3的徑方向之外，還沿著研磨墊3之周方向排列。因此，當研磨台2及研磨墊3旋轉時，研磨墊3與加熱液及冷卻液兩者進行熱交換。2個清洗噴嘴60配置於熱交換器11兩側。 The third figure is a top view showing the positional relationship between the heat exchanger 11 on the polishing pad 3 and the polishing head 1 . The heat exchanger 11 is circular when viewed from above, and the diameter of the heat exchanger 11 is smaller than that of the grinding head 1 . The distance from the center of rotation of the polishing pad 3 to the center of the heat exchanger 11 is the same as the distance from the center of rotation of the polishing pad 3 to the center of the polishing head 1 . Since the heating flow path 61 and the cooling flow path 62 are adjacent to each other, the heating flow path 61 and the cooling flow path 62 are arranged not only in the radial direction of the polishing pad 3 but also in the circumferential direction of the polishing pad 3 . Therefore, when the polishing table 2 and the polishing pad 3 rotate, the polishing pad 3 exchanges heat with both the heating liquid and the cooling liquid. Two cleaning nozzles 60 are arranged on both sides of the heat exchanger 11 .

第四圖係顯示熱交換器11之內部構造的剖面圖。熱交換器11之整個側面11a由撥水材料71構成。本實施形態之熱交換器11的側面11a係圓筒形狀，且熱交換器11之側面11a的周圍由撥水材料71構成。本實施形態之撥水材料71係由聚四氟乙烯構成之塗布層。已知之聚四氟乙烯即鐵弗龍(登錄商標)。第四圖之符號Q表示漿液。一種實施形態除了熱交換器11的側面11a之外，熱交換器11的整個底面11b亦可由撥水材料構成。例如亦可藉由以聚四氟乙烯構成之塗布層來構成熱交換器11的底面11b。 Figure 4 is a sectional view showing the internal structure of the heat exchanger 11 . The entire side 11a of the heat exchanger 11 is made of a water-repellent material 71 . The side surface 11a of the heat exchanger 11 of this embodiment is cylindrical, and the periphery of the side surface 11a of the heat exchanger 11 is made of a water-repellent material 71 . The water-repellent material 71 of this embodiment is a coating layer made of polytetrafluoroethylene. The known polytetrafluoroethylene is Teflon (registered trademark). Symbol Q in Figure 4 represents slurry. One embodiment In addition to the side surface 11a of the heat exchanger 11, the entire bottom surface 11b of the heat exchanger 11 may also be made of a water-repellent material. For example, the bottom surface 11b of the heat exchanger 11 may be formed by a coating layer made of polytetrafluoroethylene.

一種實施形態如第五圖所示，撥水材料71亦可由撥水性之黏著膠帶80構成。撥水性之黏著膠帶80的一面由黏著層80a構成，另一面由撥水層80b構成。撥水層80b，例如由聚四氟乙烯等之撥水材料而構成。撥水性之黏著膠帶80 貼合於流路構造體70的側面。當黏著膠帶80之撥水性降低時，即從流路構造體70剝下黏著膠帶80，並將新的撥水性黏著膠帶貼合於流路構造體70之側面。 One embodiment is shown in the fifth figure, the water-repellent material 71 can also be made of a water-repellent adhesive tape 80 . One side of the water-repellent adhesive tape 80 is composed of an adhesive layer 80a, and the other side is composed of a water-repellent layer 80b. The water-repellent layer 80b is made of water-repellent materials such as polytetrafluoroethylene, for example. The water-repellent adhesive tape 80 is attached to the side surface of the channel structure 70 . When the water repellency of the adhesive tape 80 decreases, the adhesive tape 80 is peeled off from the flow path structure 70 and a new water repellent adhesive tape is attached to the side of the flow path structure 70 .

一種實施形態如第六圖所示，撥水材料71亦可由矽橡膠90構成。亦即，流路構造體70之側面以矽橡膠90覆蓋，且熱交換器11之整個側面11a由矽橡膠90構成。矽橡膠90本身具有撥水性。再者，矽橡膠90亦可發揮隔熱材料之功能。因此，即使漿液附著在由矽橡膠90構成之熱交換器11的側面11a，在熱交換器11中流動之加熱液的熱不易傳導至矽橡膠90上的漿液。使其能防止附著於矽橡膠90之漿液乾燥。為使矽橡膠90發揮隔熱材料之功能，矽橡膠90之厚度宜為1mm以上。 An embodiment is shown in FIG. 6 , the water-repellent material 71 can also be made of silicon rubber 90 . That is, the side surfaces of the channel structure 70 are covered with the silicone rubber 90 , and the entire side surfaces 11 a of the heat exchanger 11 are made of the silicone rubber 90 . Silicone rubber 90 itself has water repellency. Furthermore, the silicone rubber 90 can also function as a heat insulating material. Therefore, even if the slurry adheres to the side surface 11 a of the heat exchanger 11 formed of the silicone rubber 90 , the heat of the heating liquid flowing in the heat exchanger 11 is not easily transferred to the slurry on the silicone rubber 90 . It can prevent the slurry attached to the silicone rubber 90 from drying. In order for the silicone rubber 90 to function as a heat insulating material, the thickness of the silicone rubber 90 should be more than 1mm.

再者，即使晶圓W研磨中，從研磨頭1脫離之晶圓W碰撞熱交換器11的側面11a，矽橡膠90仍可緩和對晶圓W之撞擊。結果可使晶圓W從研磨頭1脫離時對晶圓W的損傷達到最小程度。 Moreover, even if the wafer W detached from the polishing head 1 collides with the side surface 11 a of the heat exchanger 11 during the wafer W grinding, the silicon rubber 90 can still alleviate the impact on the wafer W. As a result, damage to the wafer W when the wafer W is detached from the polishing head 1 can be minimized.

一種實施形態如第七圖所示，撥水材料71亦可具備：矽橡膠90與撥水性之塗布層91。矽橡膠90覆蓋流路構造體70之側面，撥水性之塗布層91覆蓋矽橡膠90的外面。撥水性之塗布層91，例如由聚四氟乙烯構成。其他構成由於與第六圖所示之實施形態相同，因此省略其重複之說明。 One embodiment As shown in the seventh figure, the water-repellent material 71 may also include: a silicone rubber 90 and a water-repellent coating layer 91 . The silicone rubber 90 covers the side surface of the flow channel structure 70 , and the water-repellent coating layer 91 covers the outside of the silicone rubber 90 . The water-repellent coating layer 91 is made of polytetrafluoroethylene, for example. Since other configurations are the same as those of the embodiment shown in FIG. 6 , repeated description thereof will be omitted.

採用第四圖至第七圖所示之實施形態時，在晶圓W研磨中，附著於撥水材料71表面之漿液集合使其體積增加。導致漿液不易乾燥，而防止晶圓W研磨中之漿液凝固在熱交換器11的側面11a。 When the embodiments shown in FIGS. 4 to 7 are used, during the polishing of the wafer W, the slurry attached to the surface of the water-repellent material 71 gathers to increase its volume. As a result, the slurry is not easy to dry, and the slurry in the grinding process of the wafer W is prevented from solidifying on the side surface 11 a of the heat exchanger 11 .

第八圖係顯示熱交換器11之其他實施形態的剖面圖。由於下述之本實施形態未特別說明的構成部分與參照第一圖至第七圖而說明之實施形態構成部分相同，因此省略其重複之說明。如第八圖所示，本實施形態之熱交換器11 具備：內部形成有加熱流路61、冷卻流路62、及純水流路92之流路構造體70及固定於流路構造體70側面之多孔材料95。多孔材料95，例如由碳化矽、氧化鋁(alumina)等陶瓷材料所構成。 Figure 8 is a sectional view showing another embodiment of the heat exchanger 11 . Since the constituent parts of the present embodiment not described below are the same as the constituent parts of the embodiment described with reference to FIGS. 1 to 7, repeated description thereof will be omitted. As shown in Figure 8, the heat exchanger 11 of this embodiment is provided with: a flow path structure 70 with a heating flow path 61, a cooling flow path 62, and a pure water flow path 92 formed inside; Porous materials95. The porous material 95 is made of ceramic materials such as silicon carbide and alumina.

純水流路92位於加熱流路61及冷卻流路62之外側。純水流路92包圍加熱流路61及冷卻流路62，且沿著多孔材料95之內面延伸。本實施形態之流路構造體70與第一圖至第三圖所示的實施形態相同係圓形。純水流路92係位於圓形之流路構造體70最外部的環狀流路。多孔材料95之內面構成純水流路92的外壁，熱交換器11之整個側面11a由多孔材料95構成。 The pure water flow path 92 is located outside the heating flow path 61 and the cooling flow path 62 . The pure water flow path 92 surrounds the heating flow path 61 and the cooling flow path 62 and extends along the inner surface of the porous material 95 . The channel structure 70 of this embodiment is circular like the embodiments shown in the first to third figures. The pure water channel 92 is an annular channel located at the outermost portion of the circular channel structure 70 . The inner surface of the porous material 95 constitutes the outer wall of the pure water flow path 92 , and the entire side surface 11 a of the heat exchanger 11 is formed of the porous material 95 .

純水流路92連接有純水供給管線100，純水流量調整閥101安裝於純水供給管線100中。純水從無圖示之純水供給源通過純水供給管線100而供給至純水流路92。供給至純水流路92之純水的流量藉由純水流量調整閥101來控制。純水裝滿純水流路92並與多孔材料95之內面接觸。純水少許通過多孔材料95而從多孔材料95之外面滲出。 The pure water flow path 92 is connected to a pure water supply line 100 , and a pure water flow rate adjustment valve 101 is installed in the pure water supply line 100 . Pure water is supplied to the pure water channel 92 from a pure water supply source (not shown) through a pure water supply line 100 . The flow rate of the pure water supplied to the pure water channel 92 is controlled by the pure water flow rate adjustment valve 101 . Pure water fills the pure water flow path 92 and contacts the inner surface of the porous material 95 . The pure water slightly passes through the porous material 95 and permeates from the outside of the porous material 95 .

採用本實施形態時，熱交換器11之側面11a係由多孔材料95構成。在純水流路92中流動之純水通過多孔材料95而從多孔材料95之外面，亦即從熱交換器11之側面11a滲出。結果熱交換器11之側面11a保持在濕潤狀態。因此，不易使附著於熱交換器11之側面11a的漿液乾燥，而防止漿液凝固在多孔材料95上。 In this embodiment, the side surface 11a of the heat exchanger 11 is made of a porous material 95 . The pure water flowing in the pure water channel 92 passes through the porous material 95 and seeps out from the outside of the porous material 95 , that is, from the side surface 11 a of the heat exchanger 11 . As a result, the side face 11a of the heat exchanger 11 is kept in a wet state. Therefore, it is difficult to dry the slurry adhering to the side surface 11 a of the heat exchanger 11 , and the slurry is prevented from solidifying on the porous material 95 .

從多孔材料95滲出之純水流量可藉由純水流量調整閥101調整。晶圓W研磨中，為了將熱交換器11之側面11a維持在濕潤狀態，純水係持續供給至純水流路92。再者，晶圓W研磨後，從第一圖所示之清洗噴嘴60供給的純水清洗熱交換器11之側面11a中，為了將熱交換器11之側面11a維持在濕潤狀態，純水 亦持續供給至純水流路92。以清洗噴嘴60清洗熱交換器11之側面11a時，供給至純水流路92之純水流量，可比在晶圓W之研磨中供給至純水流路92的純水流量少。 The flow rate of pure water seeping out from the porous material 95 can be adjusted by the flow rate adjustment valve 101 of pure water. During polishing of the wafer W, pure water is continuously supplied to the pure water flow path 92 in order to keep the side surface 11 a of the heat exchanger 11 in a wet state. Furthermore, after the wafer W is ground, the side surface 11a of the heat exchanger 11 is cleaned with pure water supplied from the cleaning nozzle 60 shown in FIG. It is continuously supplied to the pure water flow path 92 . When cleaning the side surface 11 a of the heat exchanger 11 with the cleaning nozzle 60 , the flow rate of pure water supplied to the pure water flow path 92 can be lower than the flow rate of pure water supplied to the pure water flow path 92 during polishing of the wafer W.

如第八圖所示，在加熱流路61與純水流路92之間配置有隔熱層97。隔熱層97以包圍加熱流路61及冷卻流路62之方式延伸，且位於純水流路92的內側。該隔熱層97可由隔熱材料或空氣層而構成。隔熱層97防止在加熱流路61中流動之加熱液的熱傳導至多孔材料95，可防止由多孔材料95外面構成的熱交換器11之側面11a上的漿液乾燥。此外，隔熱層97防止在加熱流路61中流動之加熱液的熱被純水流路92中之純水奪走，可防止熱交換能力降低。隔熱層97亦可適用於第四圖至第七圖所示之實施形態。 As shown in FIG. 8 , a heat insulating layer 97 is arranged between the heating channel 61 and the pure water channel 92 . The heat insulating layer 97 extends to surround the heating flow path 61 and the cooling flow path 62 , and is positioned inside the pure water flow path 92 . The heat insulating layer 97 may be formed of a heat insulating material or an air layer. The heat insulating layer 97 prevents heat conduction of the heating liquid flowing in the heating channel 61 to the porous material 95, and prevents the slurry on the side surface 11a of the heat exchanger 11 formed outside the porous material 95 from drying. In addition, the heat insulating layer 97 prevents the heat of the heating liquid flowing in the heating flow path 61 from being taken away by the pure water in the pure water flow path 92, thereby preventing a decrease in heat exchange capability. The heat insulating layer 97 can also be applied to the embodiments shown in the fourth to seventh figures.

其次，參照第一圖、第九圖(a)至第九圖(c)說明以具備上述熱交換器11之研磨裝置研磨晶圓的工序。第九圖(a)至第九圖(c)所示之熱交換器11係第四圖至第八圖之任何一個圖中所示的熱交換器11。 Next, referring to FIG. 1 , FIG. 9 ( a ) to FIG. 9 ( c ), the process of polishing a wafer by using the polishing apparatus equipped with the above-mentioned heat exchanger 11 will be described. The heat exchanger 11 shown in the ninth figure (a) to the ninth figure (c) is the heat exchanger 11 shown in any one of the fourth figure to the eighth figure.

如第一圖所示，研磨台2藉由台馬達6而旋轉，研磨台2上之研磨墊3亦旋轉。將晶圓W保持在下面之研磨頭1亦藉由無圖示之馬達旋轉。熱交換器11藉由昇降機構20朝向研磨面3a移動，並接觸於研磨面3a。 As shown in the first figure, the grinding table 2 is rotated by the table motor 6, and the polishing pad 3 on the grinding table 2 is also rotated. The polishing head 1 holding the wafer W below is also rotated by a motor not shown. The heat exchanger 11 is moved toward the grinding surface 3a by the lifting mechanism 20, and contacts the grinding surface 3a.

如第九圖(a)所示，從液體供給噴嘴4供給漿液Q至研磨墊3之研磨面3a，而且以研磨頭1將晶圓W按壓於研磨墊3之研磨面3a來研磨該晶圓W。晶圓W研磨中，熱交換器11之底面11b與研磨墊3之研磨面3a相對。晶圓W研磨中，係在研磨墊3與在熱交換器11中流動的加熱液及冷卻液之間進行熱交換。亦即，在研磨墊3之研磨面3a與熱交換器11的底面11b之間有漿液Q存在狀態下，在研磨墊 3與在熱交換器11中流動的加熱液及冷卻液之間進行熱交換。藉此，將晶圓W研磨中的研磨墊3之研磨面3a溫度維持在預設的目標溫度。 As shown in Figure 9 (a), the slurry Q is supplied from the liquid supply nozzle 4 to the polishing surface 3a of the polishing pad 3, and the wafer W is pressed against the polishing surface 3a of the polishing pad 3 with the polishing head 1 to polish the wafer. W. During polishing of the wafer W, the bottom surface 11 b of the heat exchanger 11 faces the polishing surface 3 a of the polishing pad 3 . During polishing of the wafer W, heat is exchanged between the polishing pad 3 and the heating liquid and the cooling liquid flowing in the heat exchanger 11 . That is, in the state where the slurry Q exists between the polishing surface 3a of the polishing pad 3 and the bottom surface 11b of the heat exchanger 11, heat is exchanged between the polishing pad 3 and the heating liquid and the cooling liquid flowing in the heat exchanger 11. exchange. Thereby, the temperature of the polishing surface 3a of the polishing pad 3 during the polishing of the wafer W is maintained at a preset target temperature.

如第九圖(b)所示，晶圓W研磨後，執行從液體供給噴嘴4供給純水P至研磨墊3之研磨面3a，而且使晶圓W接觸研磨墊3上之純水P的水研磨工序。該水研磨工序係研磨頭1將比使用上述漿液研磨晶圓W時低的壓力施加於晶圓W。研磨晶圓W之表面以純水P清洗，而從晶圓W除去漿液及研磨屑。上述水研磨工序中，使熱交換器11之底面11b與研磨墊3之研磨面3a上的純水P接觸，並從熱交換器11之底面11b以純水P沖洗漿液。水研磨工序中，熱交換器11之底面11b與研磨墊3的研磨面3a之間的間隙以流動之純水P填滿。 As shown in FIG. 9 (b), after the wafer W is ground, the pure water P is supplied from the liquid supply nozzle 4 to the polishing surface 3a of the polishing pad 3, and the wafer W is brought into contact with the pure water P on the polishing pad 3. Water grinding process. In this water polishing step, the polishing head 1 applies a lower pressure to the wafer W than when the wafer W is polished using the aforementioned slurry. The surface of the polished wafer W is washed with pure water P to remove slurry and grinding debris from the wafer W. In the above-mentioned water polishing process, the bottom surface 11b of the heat exchanger 11 is brought into contact with the pure water P on the polishing surface 3a of the polishing pad 3, and the slurry is rinsed with the pure water P from the bottom surface 11b of the heat exchanger 11. In the water polishing process, the gap between the bottom surface 11b of the heat exchanger 11 and the polishing surface 3a of the polishing pad 3 is filled with flowing pure water P.

如第九圖(c)所示，水研磨工序後，藉由昇降機構20使熱交換器11移動至上方，而從研磨墊3之研磨面3a離開。從清洗噴嘴60將純水噴霧至熱交換器11之側面11a，來沖洗附著於熱交換器11之側面11a的漿液。以清洗噴嘴60清洗中，亦可藉由無圖示之修整器進行研磨墊3之研磨面3a的修整。 As shown in FIG. 9 (c), after the water grinding process, the heat exchanger 11 is moved upward by the lifting mechanism 20 and away from the grinding surface 3 a of the grinding pad 3 . Pure water is sprayed from the cleaning nozzle 60 to the side surface 11 a of the heat exchanger 11 to wash away the slurry adhering to the side surface 11 a of the heat exchanger 11 . During cleaning with the cleaning nozzle 60, the polishing surface 3a of the polishing pad 3 can also be dressed by a dresser not shown.

如此，本實施形態係在水研磨工序中，藉由純水在研磨墊3上流動來清洗熱交換器11之底面11b，水研磨工序後，係藉由清洗噴嘴60清洗熱交換器11之側面11a。因此，在研磨下一個晶圓之前，可從熱交換器11實質地除去全部的漿液。 In this way, in the present embodiment, the bottom surface 11b of the heat exchanger 11 is cleaned by flowing pure water on the polishing pad 3 during the water grinding process, and the side surface of the heat exchanger 11 is cleaned by the cleaning nozzle 60 after the water grinding process. 11a. Thus, substantially all of the slurry can be removed from heat exchanger 11 before grinding the next wafer.

上述研磨裝置之動作藉由動作控制部40控制。動作控制部40由專用電腦或通用電腦構成。第十圖係顯示動作控制部40之構成的示意圖。動作控制部40具備：儲存程式及資料等之記憶裝置110；按照儲存於記憶裝置110之程式進行運算的CPU(中央處理裝置)等之處理裝置120；用以將資料、程式及各種資 訊輸入記憶裝置110之輸入裝置130；用以輸出處理結果及處理之資料的輸出裝置140；及用以連接於網際網路等之網路的通信裝置150。 The operation of the above-mentioned grinding device is controlled by the operation control unit 40 . The motion control unit 40 is constituted by a dedicated computer or a general-purpose computer. FIG. 10 is a schematic diagram showing the structure of the motion control unit 40 . The motion control unit 40 is equipped with: a memory device 110 for storing programs and data; a processing device 120 such as a CPU (central processing unit) for computing according to the program stored in the memory device 110; for inputting data, programs and various information into the memory An input device 130 of the device 110; an output device 140 for outputting processing results and processed data; and a communication device 150 for connecting to a network such as the Internet.

記憶裝置110具備：處理裝置120可存取之主記憶裝置111；及儲存資料及程式之輔助記憶裝置112。主記憶裝置111例如係隨機存取記憶體(RAM)，輔助記憶裝置112係硬碟機(HDD)或固態硬碟(SSD)等存儲裝置。 The memory device 110 includes: a main memory device 111 accessible by the processing device 120; and an auxiliary memory device 112 for storing data and programs. The main memory device 111 is, for example, a random access memory (RAM), and the auxiliary memory device 112 is a storage device such as a hard disk drive (HDD) or a solid state disk (SSD).

輸入裝置130備有鍵盤、滑鼠，進一步具備：用以從記錄媒介讀取資料之記錄媒介讀取裝置132；及連接記錄媒介之記錄媒介埠134。記錄媒介係永久性實體之電腦可讀取記錄媒介，例如為光碟(例如CD-ROM、DVD-ROM)、及半導體記憶體(例如USB快閃磁碟機、記憶卡)。記錄媒介讀取裝置132之例如有CD磁碟機、DVD磁碟機等光學磁碟機、及讀卡機。記錄媒介埠134之例如有USB端子。記憶於記錄媒介之程式及/或資料經由輸入裝置130導入動作控制部40，並儲存於記憶裝置110之輔助記憶裝置112。輸出裝置140具備：顯示裝置141、印刷裝置142。 The input device 130 is equipped with a keyboard and a mouse, and further includes: a recording medium reading device 132 for reading data from a recording medium; and a recording medium port 134 connected to a recording medium. The recording medium is a permanent computer-readable recording medium, such as an optical disk (such as CD-ROM, DVD-ROM), and a semiconductor memory (such as a USB flash drive, a memory card). Examples of the recording medium reading device 132 include optical disk drives such as CD drives and DVD drives, and card readers. An example of the recording medium port 134 is a USB terminal. The programs and/or data stored in the recording medium are imported into the motion control unit 40 through the input device 130 and stored in the auxiliary memory device 112 of the memory device 110 . The output device 140 includes a display device 141 and a printing device 142 .

由電腦構成之動作控制部40按照電性儲存於記憶裝置110之程式動作。亦即，動作控制部40執行：對台馬達6發出指令而使研磨台2旋轉之步驟；對液體供給噴嘴4及研磨頭1(研磨頭1之無圖示的昇降機構及馬達)發出指令使研磨頭1旋轉，並從液體供給噴嘴4之漿液噴嘴供給漿液至研磨台2上的研磨墊3之研磨面3a，而且以研磨頭1將晶圓W按壓於研磨面，來研磨該晶圓W之步驟；在晶圓W研磨中，對昇降機構20發出指令，使熱交換器11朝向研磨面3a移動，在研磨墊3之研磨面3a與熱交換器11的底面11b之間有漿液存在狀態下，在研磨墊3與在熱交換器11中流動之加熱液與冷卻液之間進行熱交換的步驟；及晶圓W研磨後，對液體供給噴嘴4發出指令，藉由從液體供給噴嘴4之純水噴嘴供給純水至 研磨墊3之研磨面3a，使晶圓W接觸研磨面3a上之純水，且使熱交換器11之底面11b接觸研磨面3a上的純水，用純水從熱交換器11之底面11b沖洗漿液的步驟(上述的水研磨工序)。 The operation control unit 40 composed of a computer operates according to the program electrically stored in the memory device 110 . That is, the operation control unit 40 executes: a step of issuing a command to the table motor 6 to rotate the grinding table 2; The polishing head 1 rotates, and the slurry is supplied from the slurry nozzle of the liquid supply nozzle 4 to the polishing surface 3a of the polishing pad 3 on the polishing table 2, and the wafer W is pressed against the polishing surface by the polishing head 1 to polish the wafer W Steps; during wafer W grinding, command is given to lifting mechanism 20 to move heat exchanger 11 toward grinding surface 3a, and there is a state of slurry between grinding surface 3a of polishing pad 3 and bottom surface 11b of heat exchanger 11 Next, the steps of heat exchange between the polishing pad 3 and the heating liquid and the cooling liquid flowing in the heat exchanger 11; The pure water nozzle supplies pure water to the grinding surface 3a of the polishing pad 3, makes the wafer W contact the pure water on the grinding surface 3a, and makes the bottom surface 11b of the heat exchanger 11 contact the pure water on the grinding surface 3a, and uses the pure water A step of washing the slurry from the bottom surface 11b of the heat exchanger 11 (the above-mentioned water grinding step).

進一步，動作控制部40在水研磨工序後，執行對研磨頭1、昇降機構20及清洗噴嘴60發出指令，使研磨頭1與熱交換器11從研磨墊3之研磨面3a上昇，並使純水從清洗噴嘴60在熱交換器11之側面11a上噴霧，來沖洗附著在熱交換器11之側面11a的漿液之步驟。 Further, after the water polishing process, the action control unit 40 executes instructions to the polishing head 1, the lifting mechanism 20, and the cleaning nozzle 60 to make the polishing head 1 and the heat exchanger 11 rise from the polishing surface 3a of the polishing pad 3, and make the pure A step of washing the slurry adhering to the side surface 11 a of the heat exchanger 11 by spraying water from the cleaning nozzle 60 on the side surface 11 a of the heat exchanger 11 .

用以使動作控制部40執行此等步驟之程式係記錄於永久性實體之電腦可讀取的記錄媒介，並經由記錄媒介來提供動作控制部40。此外，程式亦可經由網際網路等通信網路來提供動作控制部40。 The program for enabling the motion control unit 40 to execute these steps is recorded in a non-volatile computer-readable recording medium, and is provided to the motion control unit 40 via the recording medium. In addition, the program may be provided to the motion control unit 40 via a communication network such as the Internet.

上述實施形態係以擁有本發明所屬之技術領域的一般知識者可實施本發明為目的而記載。熟悉本技術之業者當然可形成上述實施形態之各種變形例，本發明之技術性思想亦可適用於其他實施形態。因此，本發明不限定於記載之實施形態，而係按照申請專利範圍所定義之技術性思想作最廣泛之解釋。 The above-mentioned embodiments are described for the purpose that the present invention can be practiced by those who have ordinary knowledge in the technical field to which the present invention belongs. Those who are familiar with the technology can of course form various modified examples of the above-mentioned embodiments, and the technical idea of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is interpreted in the broadest way according to the technical ideas defined in the claims.

3‧‧‧研磨墊 3‧‧‧Grinding pad

3a‧‧‧研磨面 3a‧‧‧Grinding surface

11‧‧‧熱交換器 11‧‧‧Heat exchanger

11a‧‧‧熱交換器之側面 11a‧‧‧The side of the heat exchanger

11b‧‧‧熱交換器之底面 11b‧‧‧The bottom surface of the heat exchanger

61‧‧‧加熱流路 61‧‧‧Heating flow path

62‧‧‧冷卻流路 62‧‧‧Cooling flow path

70‧‧‧流路構造體 70‧‧‧fluid structure

71‧‧‧撥水材料 71‧‧‧Water repellent material

Claims (14)

一種熱交換器，係用以調整研磨墊之研磨面溫度，其特徵為具備：流路構造體，其係在內部形成有加熱流路及冷卻流路；及撥水材料，其係覆蓋前述流路構造體之側面；前述熱交換器之側面係由前述撥水材料構成；前述熱交換器之底面係由碳化矽構成。 A heat exchanger is used to adjust the temperature of the grinding surface of the polishing pad, and it is characterized in that it has: a flow path structure, which is formed with a heating flow path and a cooling flow path inside; and a water-repellent material, which covers the aforementioned flow path The side of the road structure; the side of the aforementioned heat exchanger is made of the aforementioned water-repellent material; the bottom of the aforementioned heat exchanger is made of silicon carbide. 如申請專利範圍第1項之熱交換器，其中前述撥水材料係由聚四氟乙烯構成之塗布層。 Such as the heat exchanger of item 1 of the scope of application, wherein the aforementioned water-repellent material is a coating layer made of polytetrafluoroethylene. 如申請專利範圍第1項之熱交換器，其中前述撥水材料係由撥水性之黏著膠帶構成。 Such as the heat exchanger of claim 1, wherein the aforementioned water-repellent material is made of a water-repellent adhesive tape. 如申請專利範圍第1項之熱交換器，其中前述撥水材料係由矽橡膠構成。 Such as the heat exchanger of item 1 of the scope of the patent application, wherein the aforementioned water-repellent material is made of silicone rubber. 一種熱交換器，係用以調整研磨墊之研磨面溫度，其特徵為具備：流路構造體，其係在內部形成有加熱流路及冷卻流路；及撥水材料，其係覆蓋前述流路構造體之側面；前述熱交換器之側面係由前述撥水材料構成；其中前述撥水材料包含：作為隔熱材料之矽橡膠；及撥水性之塗布層，其係覆蓋前述矽橡膠之外面。 A heat exchanger is used to adjust the temperature of the grinding surface of the polishing pad, and it is characterized in that it has: a flow path structure, which is formed with a heating flow path and a cooling flow path inside; and a water-repellent material, which covers the aforementioned flow path The side of the road structure; the side of the aforementioned heat exchanger is composed of the aforementioned water-repellent material; wherein the aforementioned water-repellent material includes: silicone rubber as a heat insulating material; and a water-repellent coating layer covering the outer surface of the aforementioned silicone rubber . 如申請專利範圍第5項之熱交換器，其中前述熱交換器之底面係由碳化矽構成。 Such as the heat exchanger of item 5 of the scope of the patent application, wherein the bottom surface of the aforementioned heat exchanger is made of silicon carbide. 如申請專利範圍第5或6項之熱交換器，其中前述矽橡膠之厚度係1mm以上。 Such as the heat exchanger of item 5 or 6 of the scope of patent application, wherein the thickness of the aforementioned silicone rubber is more than 1mm. 一種熱交換器，係用以調整研磨墊之研磨面溫度，其特徵為具備：流路構造體，其係在內部形成有加熱流路、冷卻流路及純水流路；及多孔材料，其係固定於前述流路構造體之側面；前述純水流路包圍前述加熱流路及前述冷卻流路，且沿著前述多孔材料之內面延伸；前述多孔材料之內面構成前述純水流路的外壁；前述熱交換器之側面由前述多孔材料的外面構成。 A heat exchanger, used to adjust the temperature of the grinding surface of the polishing pad, is characterized by having: a flow path structure, which is formed with a heating flow path, a cooling flow path and a pure water flow path; and a porous material, which is a fixed on the side of the aforementioned flow path structure; the aforementioned pure water flow path surrounds the aforementioned heating flow path and the aforementioned cooling flow path, and extends along the inner surface of the aforementioned porous material; the inner surface of the aforementioned porous material constitutes the outer wall of the aforementioned pure water flow path; The side surfaces of the aforementioned heat exchanger are constituted by the outer surfaces of the aforementioned porous materials. 如申請專利範圍第8項之熱交換器，其中進一步具備隔熱層，其係配置於前述加熱流路與前述純水流路之間。 For example, the heat exchanger according to item 8 of the scope of the patent application, which is further equipped with a heat insulating layer, which is arranged between the aforementioned heating flow path and the aforementioned pure water flow path. 如申請專利範圍第9項之熱交換器，其中前述隔熱層係空氣層。 Such as the heat exchanger of item 9 of the scope of the patent application, wherein the aforementioned heat insulation layer is an air layer. 如申請專利範圍第8~10項中任一項之熱交換器，其中前述多孔材料係由陶瓷構成。 Such as the heat exchanger according to any one of items 8 to 10 of the scope of patent application, wherein the aforementioned porous material is made of ceramics. 一種研磨裝置，其特徵為具備：研磨台，其係支撐研磨墊；研磨頭，其係將基板按壓於前述研磨墊之研磨面；液體供給噴嘴，其係在前述研磨墊之研磨面上選擇性供給漿液或純水；及熱交換器，其係藉由與前述研磨墊進行熱交換，來調整前述研磨面之溫度；前述熱交換器係申請專利範圍第1~11項中任一項之熱交換器。 A grinding device is characterized in that it has: a grinding table, which supports a grinding pad; a grinding head, which presses a substrate on the grinding surface of the aforementioned grinding pad; a liquid supply nozzle, which is selectively mounted on the grinding surface of the aforementioned grinding pad. Supply slurry or pure water; and a heat exchanger, which adjusts the temperature of the grinding surface by exchanging heat with the grinding pad; switch. 一種研磨方法，其特徵為：在研磨墊之研磨面上供給漿液，而且將基板按壓於前述研磨墊之研磨面來研磨該基板；前述基板研磨中，在前述研磨墊之研磨面與熱交換器的底面之間有前述漿液存在狀態下，在前述研磨墊與在前述熱交換器內流動的加熱液及冷卻液之間進行熱交換；前述基板研磨後執行水研磨工序，其係在前述研磨墊之研磨面上供給純水，而且使前述基板接觸前述研磨墊上的純水；前述水研磨工序中包含使前述熱交換器之底面接觸前述研磨墊之研磨面上的純水，而從前述熱交換器底面以前述純水沖洗前述漿液之工序；前述水研磨工序後，進一步包含噴霧工序，其係對前述熱交換器之側面噴霧純水；前述熱交換器係申請專利範圍第1~11項中任一項之熱交換器。 A polishing method, characterized in that: supply slurry on the polishing surface of the polishing pad, and press the substrate on the polishing surface of the polishing pad to polish the substrate; during the polishing of the substrate, the polishing surface of the polishing pad and the heat exchanger In the state where the aforementioned slurry exists between the bottom surfaces of the aforementioned grinding pads, heat exchange is performed between the aforementioned polishing pads and the heating fluid and cooling fluid flowing in the aforementioned heat exchangers; Pure water is supplied to the polishing surface of the aforementioned substrate, and the aforementioned substrate is contacted with the pure water on the aforementioned polishing pad; the aforementioned water polishing process includes making the bottom surface of the aforementioned heat exchanger contact the pure water on the polishing surface of the aforementioned polishing pad, and from the aforementioned heat exchange The process of washing the aforementioned slurry with the aforementioned pure water on the bottom surface of the device; after the aforementioned water grinding process, it further includes a spraying process, which is to spray pure water on the side of the aforementioned heat exchanger; Any heat exchanger. 一種永久性電腦可讀取記錄媒介，其記錄了用於使電腦執行以下步驟之程式：對台馬達發出指令使研磨台旋轉；對液體供給噴嘴及研磨頭發出指令，從前述液體供給噴嘴供給漿液至前述研磨台上之研磨墊的研磨面，而且以前述研磨頭將基板按壓於前述研磨面來研磨該基板；在前述基板研磨中，對昇降機構發出指令，使熱交換器朝向前述研磨面移動，並在前述研磨墊之研磨面與前述熱交換器的底面之間有前述漿液 存在狀態下，在前述研磨墊與流入前述熱交換器內的加熱液及冷卻液之間進行熱交換；及前述基板研磨後，對前述液體供給噴嘴發出指令，從前述液體供給噴嘴供給純水至前述研磨墊之研磨面，使前述基板接觸前述研磨面上之純水，且使前述熱交換器之底面接觸前述研磨面上的純水，從前述熱交換器底面以前述純水沖洗前述漿液，之後，對清洗噴嘴發出指令，從前述清洗噴嘴對前述熱交換器之側面噴霧純水。 A non-volatile computer-readable recording medium on which a program is recorded for causing a computer to execute the steps of: commanding a motor to rotate a grinding table; commanding a liquid supply nozzle and a grinding head, and supplying slurry from the liquid supply nozzle to the grinding surface of the polishing pad on the aforementioned grinding table, and the substrate is pressed against the aforementioned grinding surface with the aforementioned grinding head to grind the substrate; during the aforementioned substrate grinding, an instruction is issued to the lifting mechanism to move the heat exchanger toward the aforementioned grinding surface , and there is the aforementioned slurry between the grinding surface of the aforementioned grinding pad and the bottom surface of the aforementioned heat exchanger In the existing state, heat exchange is performed between the polishing pad and the heating liquid and cooling liquid flowing into the heat exchanger; and after the substrate is polished, an instruction is issued to the liquid supply nozzle to supply pure water from the liquid supply nozzle to The polishing surface of the aforementioned polishing pad, the aforementioned substrate is brought into contact with the pure water on the aforementioned grinding surface, and the bottom surface of the aforementioned heat exchanger is brought into contact with the pure water on the aforementioned grinding surface, and the aforementioned slurry is washed from the bottom surface of the aforementioned heat exchanger with the aforementioned pure water, Then, a command is issued to the cleaning nozzle, and pure water is sprayed from the cleaning nozzle to the side surface of the heat exchanger.
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